Extraordinary Off-Stoichiometric Bismuth Telluride for Enhanced n-Type Thermoelectric Power Factor

Thermoelectric properties of marcasite-type compounds MSb2(M = Ta, Nb): a combined experimental and computational study

Here, we investigate the thermoelectric properties of the marcasite-type compounds MSb2(M = Ta, Nb) in the temperature range of 310-730 K. These compounds were synthesized by a solid-state reaction followed by the spark plasma sintering process. The Rietveld refinement method confirms the monoclinic phase with space groupC2/mfor both compounds. The observed values of Seebeck coefficients exhibit non-monotonic behaviour in the studied temperature range, with the maximum magnitude of -14.4 and -22.7 µV K-1for TaSb2and NbSb2, respectively at ∼444 K. The negative sign ofSin the full temperature window signifies then-type behaviour of these compounds. Both electrical and thermal conductivities show decreasing trends with increasing temperature. The experimentally observed thermoelectric properties are understood through the first-principles DFT and Boltzmann transport equation. A pseudogap in the density of states around the Fermi level characterizes the semimetallic behaviour of these compounds. The multi-band electron and hole pockets were found to be mainly responsible for the temperature dependence of transport properties. The experimental power factors are found to be ∼0.09 and ∼0.42 mW m-1K-2at 300 K for TaSb2and NbSb2, respectively. We found that there is much room for improvement of power factor by tuning carrier concentration. The DFT-based calculations predict the maximum possible power factors at fairly high doping concentrations. The present study suggests that the combined DFT and Boltzmann transport theory are found to be reasonably good at explaining the experimental transport properties, and moderate power factors are predicted.

Electronic, optical and thermoelectric behavior of KCuX (X = S, Se, Te) monolayers

In the past few decades, two-dimensional materials gained huge deliberation due to their outstanding electronic and heat transport properties. These materials have effective applications in many areas such as photodetectors, battery electrodes, thermoelectrics, etc. In this work, we have calculated structural, electronic, optical, and thermoelectric (TE) properties of KCuX (X = S, Se, Te) monolayers (MLs) with the help of first-principles-based calculations and semi-classical Boltzmann transport equation. The phonon dispersion calculations demonstrate the dynamical stability of the KCuX (X = S, Se, Te) MLs. Our results show that the MLs of KCuX (X = S, Se, Te) are semiconductors with band gaps of 0.193 eV, 0.26 eV, and 1.001 eV respectively, and therefore they are suitable for photovoltaic applications. The optical analysis illustrates that the maximum absorption peaks of the KCuX (X = S, Se, Te) MLs are located in the visible and ultraviolet regions, which may serve as a promising candidate for designing advanced optoelectronic devices. Furthermore, thermoelectric properties of the KCuS and KCuSe MLs, including Seebeck coefficient, electrical conductivity, electronic thermal conductivity, power factor and figure of merit are calculated at different temperatures of 300 K, 600 K, and 800 K. Additionally, we also focus on the analysis of Grüneisen parameter and various scattering rates to further explain their ultra-low thermal conductivity. Our results show that KCuS and KCuSe possess ultra-low lattice thermal conductivity value of 0.15Wm-1K-1and 0.06Wm-1K-1respectively, which is lower than those of recently reported KAgSe (0.26Wm-1K-1at 300 K) and TlCuSe (0.44Wm-1K-1at 300 K), indicating towards the large value of ZT. These materials are found to possess desirable thermoelectric and optical properties, making them suitable candidates for efficient thermoelectric and optoelectronic device applications.

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe2-2D Heterojunction

Currently, the only thermoelectric (TE) materials commercially available at room temperature are those based on bismuth telluride. However, their widespread application is limited due to their inferior thermoelectric and mechanical properties. In this study, a strategy of growing a rigid second phase of MoSe2 is employed, in situ within the matrix phase to achieve n-type bismuth telluride-based materials with exceptional mechanical and thermoelectric properties. The in situ grown second phase contributes to both the electronic and lattice thermal conductivities. This is primarily attributed to the strong energy filtering effect, as the second phase forms a semi-common lattice interfacial structure with the matrix phase during growth. Furthermore, for composites containing 2 wt% MoSe2, a maximum zT value of 1.24 at 373 K can be achieved. On this basis, 8-pair TE module is fabricated and 1-pair TE module is optimized using a homemade p-type material. The optimized 1-pair TE module generates a maximum output power of 13.6 µW, which is twice that of the 8-pair TE module and four times more than the 8-pair TE module fabricated by commercial material. This work facilitates the development of the TE module by presenting a novel approach to obtaining bismuth telluride-based thermoelectric materials with superior thermoelectric and mechanical properties.

Selective Charge Carrier Transport and Bipolar Conduction in an Inorganic/Organic Bulk-Phase Composite: Optimization for Low-Temperature Thermoelectric Performance

Abundant conducting polymers are promising organic substances for low-temperature thermoelectric applications due to their inherently low thermal conductivities. By introducing a conducting polymer filler (PEDOT:PSS─poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) into a representative inorganic thermoelectric matrix (Bi2Te3), a bulk-phase composite (i.e., inorganic matrix/organic filler) for low-temperature thermoelectric applications is proposed. This composite hosts an interfacial energy barrier between the inorganic and organic components, facilitating controlled carrier transport based on its energy level, known as the energy filtering effect, and thus the composite exhibits a highly improved Seebeck coefficient compared to pristine Bi2Te3. The composite also displays a completely different temperature dependence on the Seebeck coefficient from Bi2Te3 due to its distinct bipolar conduction tendency. By regulation of the energy filtering effect and bipolar conduction tendency, the composite undergoes noticeable variations in the Seebeck coefficient, resulting in a significantly enhanced power factor. Furthermore, the composite shows a substantially reduced thermal conductivity compared to Bi2Te3 because it has lower carrier/lattice thermal contributions, possibly attributed to its high carrier/phonon scattering probabilities. Owing to the superior power factor and reduced thermal conductivity, the composite exhibits markedly enhanced thermoelectric performance, achieving a maximum figure of merit of approximately 1.26 at 380 K and an average figure of merit of approximately 1.23 in the temperature range of 323-423 K. The performance of the composite is competitive with previously reported n-type Bi2Te3 binary or ternary analogues. Therefore, the composite is highly expected to be a promising n-type counterpart of p-type Bi2Te3-based alloys for various low-temperature thermoelectric applications.

Topologically-Enhanced Thermoelectric Properties in Bi2Te3-Based Compounds: Effects of Grain Size and Misorientation

Topological insulators (TIs) and thermoelectric (TE) materials seem to belong to distinct physical realms; however, in practice, they both share common characteristics. Introducing concepts from TIs into TE materials to enhance their performance and achieve better understanding of electronic transport requires extensive research. Particularly, grain size, misorientation, and grain boundary (GB) character are of utmost importance to attain effective charge carrier transport in TE polycrystals; these factors, however, have not been thoroughly explored. Herein, we investigate the correlation between grain size, misorientation, and lattice strain in Bi2Te3 and its TI signature, aiming to improve its TE performance. We reveal an unusual behavior showing that electron mobility increases upon the increase of grain size, reaching at a maximum value of 495 cm2/V·s for an optimum grain size of 600 nm and most-frequent GB misorientation angle of 60° and then decreases with increasing grain size. It is also indicated that the combined effects of grain size reduction and point defects induce lattice strain in the Bi2Te3-matrix that is essential to trigger the TI contribution to TE transport. This trend is corroborated by first-principles calculations showing that compressive strains form multiple valleys in the valence band and opens the TI band gap. Such a combination of physical phenomena in a well-known TE material is unique and can promote our understanding of the nature of TE transport with implications for TE energy conversion.

Energy-Saving Pathways for Thermoelectric Nanomaterial Synthesis: Hydrothermal/Solvothermal, Microwave-Assisted, Solution-Based, and Powder Processing

The pillars of Green Chemistry necessitate the development of new chemical methodologies and processes that can benefit chemical synthesis in terms of energy efficiency, conservation of resources, product selectivity, operational simplicity and, crucially, health, safety, and environmental impact. Implementation of green principles whenever possible can spur the growth of benign scientific technologies by considering environmental, economical, and societal sustainability in parallel. These principles seem especially important in the context of the manufacture of materials for sustainable energy and environmental applications. In this review, the production of energy conversion materials is taken as an exemplar, by examining the recent growth in the energy-efficient synthesis of thermoelectric nanomaterials for use in devices for thermal energy harvesting. Specifically, "soft chemistry" techniques such as solution-based, solvothermal, microwave-assisted, and mechanochemical (ball-milling) methods as viable and sustainable alternatives to processes performed at high temperature and/or pressure are focused. How some of these new approaches are also considered to thermoelectric materials fabrication can influence the properties and performance of the nanomaterials so-produced and the prospects of developing such techniques further.

Surprisingly good thermoelectric performance of monolayer C3N

The rapid emergence of graphene has attracted numerous efforts to explore other two-dimensional materials. Here, we combine first-principles calculations and Boltzmann theory to investigate the structural, electronic, and thermoelectric transport properties of monolayer C₃N, which exhibits a honeycomb structure very similar to graphene. It is found that the system is both dynamically and thermally stable even at high temperature. Unlike graphene, the monolayer has an indirect band gap of 0.38 eV and much lower lattice thermal conductivity. Moreover, the system exhibits obviously larger electrical conductivity and Seebeck coefficients for the hole carriers. Consequently, theZTvalue ofp-type C₃N can reach 1.4 at 1200 K when a constant relaxation time is predicted by the simple deformation potential theory. However, such a largerZTis reduced to 0.6 if we fully consider the electron-phonon coupling. Even so, the thermoelectric performance of monolayer C₃N is still significantly enhanced compared with that of graphene, and is surprisingly good for low-dimensional thermoelectric materials consisting of very light elements.

Thermoelectric degrees of freedom determining thermoelectric efficiency

For over half a century, the development of thermoelectric materials has based on the dimensionless figure of merit zT, assuming that the efficiency is mainly determined by this single parameter. Here, we show that the thermoelectric conversion efficiency is determined by three independent parameters, Zgen, τ, and β, which we call the three thermoelectric degrees of freedom (DoFs). Zgen is the well-defined mean of the traditional zT under nonzero temperature differences. The two additional parameters τ and β are gradients of material properties and crucial to evaluating the heat current altered by nonzero Thomson heat and asymmetric Joule heat escape. Each parameter is a figure of merit. Therefore, increasing one of the three DoFs leads to higher efficiency. Our finding explains why the single-parameter theory is inaccurate. Further, it suggests an alternative direction in material discovery and device design in thermoelectrics, such as high τ and β, beyond zT.

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General efficiency theory of thermoelectric conversion is derived for T-dependent properties

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Three degrees of freedom Z_gen, τ, and β determine thermoelectric efficiency

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Efficiency can vary up to approximately 40% with τ and β

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Each degree of freedom is a figure of merit

Phonon Scattering and Suppression of Bipolar Effect in MgO/VO2 Nanoparticle Dispersed p-Type Bi0.5Sb1.5Te3 Composites

Bismuth-Telluride-based compounds are unique materials for thermoelectric cooling applications. Because Bi₂Te₃ is a narrow gap semiconductor, the bipolar diffusion effect is a critical issue to enhance thermoelectric performance. Here, we report the significant reduction of thermal conductivity by decreasing lattice and bipolar thermal conductivity in extrinsic phase mixing of MgO and VO₂ nanoparticles in Bi_0.5Sb_1.5Te₃ (BST) bulk matrix. When we separate the thermal conductivity by electronic κel, lattice κlat, and bipolar κbi thermal conductivities, all the contributions in thermal conductivities are decreased with increasing the concentration of oxide particle distribution, indicating the effective phonon scattering with an asymmetric scattering of carriers. The reduction of thermal conductivity affects the improvement of the ZT values. Even though significant carrier filtering effect is not observed in the oxide bulk composites due to micro-meter size agglomeration of particles, the interface between oxide and bulk matrix scatters carriers giving rise to the increase of the Seebeck coefficient and electrical resistivity. Therefore, we suggest the extrinsic phase mixing of nanoparticles decreases lattice and bipolar thermal conductivity, resulting in the enhancement of thermoelectric performance over a wide temperature range.

Scalable colloidal synthesis of Bi2Te2.7Se0.3 plate-like particles give access to a high-performing n-type thermoelectric material for low temperature application

Colloidal synthesis is harnessed for the gram-scale preparation of hexagonal-shaped plate-like Bi2Te2.7Se0.3 particles, yielding nearly 5 g of the product in one experiment. The resultant textured particles are highly crystalline, phase-pure, chemically uniform, and can serve as a starting material for the preparation of bulk thermoelectrics for room temperature applications. The consolidation occurs via spark plasma sintering, which affords nanostructured n-type Bi2Te2.7Se0.3 material exhibiting a high figure of merit ZT ≈ 1 at 373 K with an average ZT ≈ 0.93 (300-473 K). Our experimental and theoretical studies indicate that the high thermoelectric performance is attributed to a favorable combination of the resultant transport properties. Specifically, bottom-up formation of the plate-like particles results in the substantial reduction of thermal conductivity by nanostructuring as observed experimentally and can be ascribed to phonon scattering at grain boundaries and suppressed bipolar conduction. When coupled with high electrical conductivity, which is preserved at the bulk scale as confirmed by ab initio calculations, these factors boost the thermoelectric performance of the as-synthesized n-type Bi2Te2.7Se0.3 bulk nanostructured alloy to the state-of-the-art level. The combination of a newly developed scalable colloidal synthesis with optimized spark plasma sintering constitutes a convenient route to nanostructured bulk thermoelectrics, which is an interesting pathway for the preparation of simple and complex thermoelectric chalcogenides.

Simultaneous Enhancement of the Thermoelectric and Mechanical Performance in One-Step Sintered n-Type Bi2Te3-Based Alloys via a Facile MgB2 Doping Strategy

The Bi₂Te₃-based alloys have been commercialized for the applications of energy harvesting and refrigeration for decades. However, the commercial Bi₂Te₃-based alloys produced by the zone-melting (ZM) method usually show poor mechanical strength and crack problems as well as the sluggish figure of merit ZT, especially for the less-progressed n-type samples. In this work, we have simultaneously enhanced the thermoelectric and mechanical performance of the one-step spark plasma sintering (SPS)-derived n-type Bi₂Te_2.7Se_0.3 alloys just by doping a small amount of superconducting material MgB₂ where Mg and B atoms can play significant roles in carrier density optimization and hardness enhancement. Besides the optimization of carrier density, the MgB₂ doping can also increase the carrier mobility but decrease the lattice and bipolar thermal conductivity, leading to a peak ZT of 0.96 at 325 K and an average ZT of 0.88 within 300-500 K in the 0.5% MgB₂-doped Bi₂Te_2.7Se_0.3 (BTSMB) alloys. The peak ZT and average ZT of our optimized BTSMB samples are comparable and higher than those of the state-of-the-art commercial ZM ingot. Moreover, the optimized BTSMB sample also exhibits almost 70% enhancement in hardness compared with the ZM ingot. Our results demonstrate the great potential of the MgB₂ doping strategy for mass production of SPS-derived Bi₂Te₃-based alloys in one-step sintering.

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions

Bismuth-telluride-based solid solutions are the best commercial thermoelectric materials near room temperature. For their n-type polycrystalline compounds, the maximum figures of merit (zTs) are often less than 1.0 due to the degraded carrier mobility resulting from the loss of texture. Herein, a liquid-phase hot deformation procedure, during which the Bi2(Te,Se)3 ingots are directly hot deformed with the extrusion of liquid eutectic phase, is performed to enhance the thermoelectric performance of n-type Bi2(Te,Se)3 alloys. The deformation-induced dynamic recrystallization is remarkably suppressed due to the reduction of nucleation sites and the release of deformation stress by liquid phase, contributing to a weakened carrier scattering and enhanced carrier mobility. The liquid eutectic phase also facilitates the rotation of grains and enhanced (000l) texture, further improving carrier mobility. In addition, the dense dislocations and lattice distortion introduced into the matrix reduce the lattice thermal conductivity. As a result, a high zT value of 1.1 at 400 K is obtained, about 75% increment over the normal one-step hot deformed alloys. This work not only demonstrates a simple and efficient technique for achieving superior n-type Bi2Te3-based materials, but also elucidates the important role of liquid eutectic phase in hot deformation.

Ultrahigh Power Factor and Electron Mobility in n-Type Bi2Te3-x%Cu Stabilized under Excess Te Condition

The thermoelectric (TE) community has mainly focused on improving the figure of merit (ZT) of materials. However, the output power of TE devices directly depends on the power factor (PF) rather than ZT. Effective strategies of enhancing PF have been elusive for Bi₂Te₃-based compounds, which are efficient thermoelectrics operating near ambient temperature. Here, we report ultrahigh carrier mobility of ∼467 cm² V^-1 s^-1 and power factor of ∼45 μW cm^-1 K^-2 in a new n-type Bi₂Te₃ system with nominal composition Cu_xBi₂Te_3.17 (x = 0.02, 0.04, and 0.06). It is obtained by reacting Bi₂Te₃ with surplus Cu and Te and subsequently pressing powder products by spark plasma sintering (SPS). The SPS discharges excess Te but stabilizes the high extent of Cu in the structure, giving unique SPS Cu_xBi₂Te_3.17 samples. The analyzed composition is close to "Cu_xBi₂Te₃". Their charge transport properties are highly unusual. Hall carrier concentration and mobility simultaneously increase with the higher mole fraction of Cu contrary to the typical carrier scattering mechanism. As a consequence, the electrical conductivity is considerably enhanced with Cu incorporation. The Seebeck coefficient is nearly unchanged by the increasing Cu content in contrast to the general understanding of inverse relationship between electrical conductivity and Seebeck coefficient. These effects synergistically lead to a record high power factor among all polycrystalline n-type Bi₂Te₃-based materials.

High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures

Despite extensive studies on emerging thermoelectric material SnSe, its n-type form is largely underdeveloped mainly due to the difficulty in stabilizing the carrier concentration at the optimal level. Here, we dually introduce Cl and PbSe to induce n-type conduction in intrinsic p-type SnSe. PbSe alloying enhances the power factor and suppresses lattice thermal conductivity at the same time, giving a highest thermoelectric figure of merit ZT of 1.2 at 823 K for n-type polycrystalline SnSe materials. The best composition is Sn_0.90Pb_0.15Se_0.95Cl_0.05. Samples prepared by the solid-state reaction show a high maximum ZT ( ZT_max) ∼1.1 and ∼0.8 parallel and perpendicular to the press direction of spark plasma sintering, respectively. Remarkably, post-ball milling and annealing processes considerably reduce structural anisotropy, thereby leading to a ZT_max ∼1.2 along both the directions. Hence, the direction giving a ZT_max is controllable for this system using the specialized preparation methods for specimens. Spherical aberration-corrected scanning transmission electron microscopic analyses reveal the presence of heavily dense edge dislocations and strain fields, not observed in the p-type counterparts, which contribute to decreasing lattice thermal conductivity. Our theoretical calculations employing a Callaway-Debye model support the experimental results for thermal transport and microscopic structures.

Large-Scale, Solution-Synthesized Nanostructured Composites for Thermoelectric Applications

As more than one-half of worldwide consumed energy is wasted as heat every year, high-efficiency thermoelectric materials are highly demanded for the conversion of rejected heat to electricity in a reliable fashion. In the recent few decades, nanoscience has revolutionized thermoelectrics via the quantum confinement effect in electronic structures and grain-boundary scattering of heat carriers. As the gas-phase syntheses of nanomaterials are not easily scalable and solid-state syntheses are not controllable in terms of microstructures at various length scales, significant research efforts have focused on solution syntheses that can build nanostructures with well-defined size, composition, and morphology. Beyond the performance, several novel effects that benefit the portability and cost efficiency have been discovered in the solution-synthesized nanomaterials. Herein, the relevant progress is reviewed and some prospects proposed.

High Thermoelectric Performance in Crystallographically Textured n-Type Bi2Te3- xSe x Produced from Asymmetric Colloidal Nanocrystals

In the present work, we demonstrate crystallographically textured n-type Bi₂Te_{3- x}Se _x nanomaterials with exceptional thermoelectric figures of merit produced by consolidating disk-shaped Bi₂Te_{3- x}Se _x colloidal nanocrystals (NCs). Crystallographic texture was achieved by hot pressing the asymmetric NCs in the presence of an excess of tellurium. During the hot press, tellurium acted both as lubricant to facilitate the rotation of NCs lying close to normal to the pressure axis and as solvent to dissolve the NCs approximately aligned with the pressing direction, which afterward recrystallize with a preferential orientation. NC-based Bi₂Te_{3- x}Se _x nanomaterials showed very high electrical conductivities associated with large charge carrier concentrations, n. We hypothesize that such large n resulted from the presence of an excess of tellurium during processing, which introduced a high density of donor Te_Bi antisites. Additionally, the presence in between grains of traces of elemental Te, a narrow band gap semiconductor with a work function well below Bi₂Te_{3- x}Se _x, might further contribute to increase n through spillover of electrons, while at the same time blocking phonon propagation and hole transport through the nanomaterial. NC-based Bi₂Te_{3- x}Se _x nanomaterials were characterized by very low thermal conductivities in the pressing direction, which resulted in ZT values up to 1.31 at 438 K in this direction. This corresponds to a ca. 40% ZT enhancement from commercial ingots. Additionally, high ZT values were extended over wider temperature ranges due to reduced bipolar contribution to the Seebeck coefficient and the thermal conductivity. Average ZT values up to 1.15 over a wide temperature range, 320 to 500 K, were measured, which corresponds to a ca. 50% increase over commercial materials in the same temperature range. Contrary to most previous works, highest ZT values were obtained in the pressing direction, corresponding to the c crystallographic axis, due to the predominance of the thermal conductivity reduction over the electrical conductivity difference when comparing the two crystal directions.

Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions

Interface engineering has been demonstrated to be an effective strategy for enhancing the thermoelectric (TE) performance of materials. However, a very typical interface in semiconductors, that is, the PN junction (PNJ), is scarcely adopted by the thermoelectrical community because of the coexistence of holes and electrons. Interestingly, our explorative results provide a definitively positive case that appropriate PNJs are able to enhance the TE performance of p-type Sb₂Te₃-based alloys. Specifically, owing to the formation of the charge-depletion layer and built-in electric field, the carrier concentration and transport can be optimized and thus the power factor is improved and the electronic thermal conductivity is decreased. Meanwhile, PNJs provide scattering centers for phonons, leading to a reduced lattice thermal conductivity. Consequently, the p-type (Bi₂Te₃)_0.15-(Sb₂Te₃)_0.85 composites comprising PNJs achieve a ∼131% improvement of the ZT value compared with the pure Sb₂Te₃. The increased ZT demonstrates the feasibility of improving the TE properties by introducing PNJs, which will open a new and effective avenue for designing TE alloys with high performance.

Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi₂) sandwiched between two Bi₂Se₃ quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ_lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi₂Se₃ (κ_lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi₂) _m(Bi₂Se₃) _n. Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ_lat. These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ_lat. Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.

Crystallographically Textured Nanomaterials Produced from the Liquid Phase Sintering of Bi xSb2- xTe3 Nanocrystal Building Blocks

Bottom-up approaches for producing bulk nanomaterials have traditionally lacked control over the crystallographic alignment of nanograins. This limitation has prevented nanocrystal-based nanomaterials from achieving optimized performances in numerous applications. Here we demonstrate the production of nanostructured Bi _xSb_{2- x}Te₃ alloys with controlled stoichiometry and crystallographic texture through proper selection of the starting building blocks and the adjustment of the nanocrystal-to-nanomaterial consolidation process. In particular, we hot pressed disk-shaped Bi _xSb_{2- x}Te₃ nanocrystals and tellurium nanowires using multiple pressure and release steps at a temperature above the tellurium melting point. We explain the formation of the textured nanomaterials though a solution-reprecipitation mechanism under a uniaxial pressure. Additionally, we further demonstrate these alloys to reach unprecedented thermoelectric figures of merit, up to ZT = 1.96 at 420 K, with an average value of ZT_ave = 1.77 for the record material in the temperature range 320-500 K, thus potentially allowing up to 60% higher energy conversion efficiencies than commercial materials.

Realizing zT of 2.3 in Ge1-x-y Sbx Iny Te via Reducing the Phase-Transition Temperature and Introducing Resonant Energy Doping

GeTe with rhombohedral-to-cubic phase transition is a promising lead-free thermoelectric candidate. Herein, theoretical studies reveal that cubic GeTe has superior thermoelectric behavior, which is linked to (1) the two valence bands to enhance the electronic transport coefficients and (2) stronger enharmonic phonon-phonon interactions to ensure a lower intrinsic thermal conductivity. Experimentally, based on Ge_1-x Sb_x Te with optimized carrier concentration, a record-high figure-of-merit of 2.3 is achieved via further doping with In, which induces the distortion of the density of states near the Fermi level. Moreover, Sb and In codoping reduces the phase-transition temperature to extend the better thermoelectric behavior of cubic GeTe to low temperature. Additionally, electronic microscopy characterization demonstrates grain boundaries, a high-density of stacking faults, and nanoscale precipitates, which together with the inevitable point defects result in a dramatically decreased thermal conductivity. The fundamental investigation and experimental demonstration provide an important direction for the development of high-performance Pb-free thermoelectric materials.

Enhancing Thermoelectric Performances of Bismuth Antimony Telluride via Synergistic Combination of Multiscale Structuring and Band Alignment by FeTe2 Incorporation

It has been a difficulty to form well-distributed nano- and mesosized inclusions in a Bi₂Te₃-based matrix and thereby realizing no degradation of carrier mobility at interfaces between matrix and inclusions for high thermoelectric performances. Herein, we successfully synthesize multistructured thermoelectric Bi_0.4Sb_1.6Te₃ materials with Fe-rich nanoprecipitates and sub-micron FeTe₂ inclusions by a conventional solid-state reaction followed by melt-spinning and spark plasma sintering that could be a facile preparation method for scale-up production. This study presents a bismuth antimony telluride based thermoelectric material with a multiscale structure whose lattice thermal conductivity is drastically reduced with minimal degradation on its carrier mobility. This is possible because a carefully chosen FeTe₂ incorporated in the matrix allows its interfacial valence band with the matrix to be aligned, leading to a significantly improved p-type thermoelectric power factor. Consequently, an impressively high thermoelectric figure of merit ZT of 1.52 is achieved at 396 K for p-type Bi_0.4Sb_1.6Te₃-8 mol % FeTe₂, which is a 43% enhancement in ZT compared to the pristine Bi_0.4Sb_1.6Te₃. This work demonstrates not only the effectiveness of multiscale structuring for lowering lattice thermal conductivities, but also the importance of interfacial band alignment between matrix and inclusions for maintaining high carrier mobilities when designing high-performance thermoelectric materials.

Micro- and Macromechanical Properties of Thermoelectric Lead Chalcogenides

Both n- and p-type lead telluride (PbTe)-based thermoelectric (TE) materials display high TE efficiency, but the low fracture strength may limit their commercial applications. To find ways to improve these macroscopic mechanical properties, we report here the ideal strength and deformation mechanism of PbTe using density functional theory calculations. This provides structure-property relationships at the atomic scale that can be applied to estimate macroscopic mechanical properties such as fracture toughness. Among all the shear and tensile paths that are examined here, we find that the lowest ideal strength of PbTe is 3.46 GPa along the (001)/⟨100⟩ slip system. This leads to an estimated fracture toughness of 0.28 MPa m^1/2 based on its ideal stress-strain relation, which is in good agreement with our experimental measurement of 0.59 MPa m^1/2. We find that softening and breaking of the ionic Pb-Te bond leads to the structural collapse. To improve the mechanical strength of PbTe, we suggest strengthening the structural stiffness of the ionic Pb-Te framework through an alloying strategy, such as alloying PbTe with isotypic PbSe or PbS. This point defect strategy has a great potential to develop high-performance PbTe-based materials with robust mechanical properties, which may also be applied to other materials and applications.

ZnTe Alloying Effect on Enhanced Thermoelectric Properties of p-Type PbTe

We investigate the effect of ZnTe incorporation on PbTe to enhance thermoelectric performance. We report structural, microscopic, and spectroscopic characterizations, ab initio theoretical calculations, and thermoelectric transport properties of Pb_0.985Na_0.015Te-x% ZnTe (x = 0, 1, 2, 4). We find that the solid solubility limit of ZnTe in PbTe is less than 1 mol %. The introduction of 2% ZnTe in p-type Pb_0.985Na_0.015Te reduces the lattice thermal conductivity through the ZnTe precipitates at the microscale. Consequently, a maximum thermoelectric figure of merit (ZT) of 1.73 at 700 K is achieved for the spark plasma-sintered Pb_0.985Na_0.015Te-2% ZnTe, which arises from a decreased lattice thermal conductivity of ∼0.69 W m^-1 K^-1 at ∼700 K in comparison with Pb_0.985Na_0.015Te.