Isotope engineering of van der Waals interactions in hexagonal boron nitride

Direct Quantifying Charge Transfer by 4D-STEM: A Study on Perfect and Defective Hexagonal Boron Nitride

Four-dimensional scanning transmission electron microscopy (4D-STEM) offers an attractive approach to simultaneously obtain precise structural determinations and capture details of local electric fields and charge densities. However, accurately extracting quantitative data at the atomic scale poses challenges, primarily due to probe propagation and size-related effects, which may even lead to misinterpretations of qualitative effects. In this study, we present a comprehensive analysis of electric fields and charge densities in both pristine and defective h-BN flakes. Through a combination of experiments and first-principle simulations, we demonstrate that while precise charge quantification at individual atomic sites is hindered by probe effects, 4D-STEM can directly measure charge transfer phenomena at the monolayer edge with sensitivity down to a few tenths of an electron and a spatial resolution on the order of a few angstroms.

Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor

Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, which can affect both thermal properties and optoelectronic properties of conventional semiconductors. However, how isotopic mass affects the optoelectronic properties in 2D semiconductors remains unclear because of measurement uncertainties resulting from sample heterogeneities. Here, we report an anomalous optical bandgap energy red shift of 13 (±7) milli-electron volts as mass of Mo isotopes is increased in laterally structured 100MoS2-92MoS2 monolayers grown by a two-step chemical vapor deposition that mitigates the effects of heterogeneities. This trend, which is opposite to that observed in conventional semiconductors, is explained by many-body perturbation and time-dependent density functional theories that reveal unusually large exciton binding energy renormalizations exceeding the ground-state renormalization energy due to strong coupling between confined excitons and phonons. The isotope effect on the optical bandgap reported here provides perspective on the important role of exciton-phonon coupling in the physical properties of two-dimensional materials.

Advances in boron nitride-based nanomaterials for environmental remediation and water splitting: a review

Boron nitride has gained wide-spread attention globally owing to its outstanding characteristics, such as a large surface area, high thermal resistivity, great mechanical strength, low density, and corrosion resistance. This review compiles state-of-the-art synthesis techniques, including mechanical exfoliation, chemical exfoliation, chemical vapour deposition (CVD), and green synthesis for the fabrication of hexagonal boron nitride and its composites, their structural and chemical properties, and their applications in hydrogen production and environmental remediation. Additionally, the adsorptive and photocatalytic properties of boron nitride-based nanocomposites for the removal of heavy metals, dyes, and pharmaceuticals from contaminated waters are discussed. Lastly, the scope of future research, including the facile synthesis and large-scale applicability of boron nitride-based nanomaterials for wastewater treatment, is presented. This review is expected to deliver preliminary knowledge of the present state and properties of boron nitride-based nanomaterials, encouraging the future study and development of these materials for their applications in various fields.

Boron and Nitrogen Isotope Effects on Hexagonal Boron Nitride Properties

The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising 2D material for electronic, optoelectronic, nanophotonic, and quantum devices. Here, the changes in hBN's properties induced by isotopic purification in both boron and nitrogen are reported. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (≈20 at% 10 B, 80 at% 11 B) while using naturally abundant nitrogen (99.6 at% 14 N, 0.4 at% 15 N), that is, almost pure 14 N. In this study, the class of isotopically purified hBN crystals to 15 N is extended. Crystals in the four configurations, namely h10 B14 N, h11 B14 N, h10 B15 N, and h11 B15 N, are grown by the metal flux method using boron and nitrogen single isotope (> 99%) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the 15 N-purified crystals at the state-of-the-art of currently available 14 N-purified hBN. The growth of high-quality h10 B14 N, h11 B14 N, h10 B15 N, and h11 B15 N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies.

Polariton design and modulation via van der Waals/doped semiconductor heterostructures

Hyperbolic phonon polaritons (HPhPs) can be supported in materials where the real parts of their permittivities along different directions are opposite in sign. HPhPs offer confinements of long-wavelength light to deeply subdiffractional scales, while the evanescent field allows for interactions with substrates, enabling the tuning of HPhPs by altering the underlying materials. Yet, conventionally used noble metal and dielectric substrates restrict the tunability of this approach. To overcome this challenge, here we show that doped semiconductor substrates, e.g., InAs and CdO, enable a significant tuning effect and dynamic modulations. We elucidated HPhP tuning with the InAs plasma frequency in the near-field, with a maximum difference of 8.3 times. Moreover, the system can be dynamically modulated by photo-injecting carriers into the InAs substrate, leading to a wavevector change of ~20%. Overall, the demonstrated hBN/doped semiconductor platform offers significant improvements towards manipulating HPhPs, and potential for engineered and modulated polaritonic systems.

Anomalous isotope effect on mechanical properties of single atomic layer Boron Nitride

The ideal mechanical properties and behaviors of materials without the influence of defects are of great fundamental and engineering significance but considered inaccessible. Here, we use single-atom-thin isotopically pure hexagonal boron nitride (hBN) to demonstrate that two-dimensional (2D) materials offer us close-to ideal experimental platforms to study intrinsic mechanical phenomena. The highly delicate isotope effect on the mechanical properties of monolayer hBN is directly measured by indentation: lighter 10B gives rise to higher elasticity and strength than heavier 11B. This anomalous isotope effect establishes that the intrinsic mechanical properties without the effect of defects could be measured, and the so-called ultrafine and normally neglected isotopic perturbation in nuclear charge distribution sometimes plays a more critical role than the isotopic mass effect in the mechanical and other physical properties of materials.

Van der Waals isotope heterostructures for engineering phonon polariton dispersions

Element isotopes are characterized by distinct atomic masses and nuclear spins, which can significantly influence material properties. Notably, however, isotopes in natural materials are homogenously distributed in space. Here, we propose a method to configure material properties by repositioning isotopes in engineered van der Waals (vdW) isotopic heterostructures. We showcase the properties of hexagonal boron nitride (hBN) isotopic heterostructures in engineering confined photon-lattice waves-hyperbolic phonon polaritons. By varying the composition, stacking order, and thicknesses of h10BN and h11BN building blocks, hyperbolic phonon polaritons can be engineered into a variety of energy-momentum dispersions. These confined and tailored polaritons are promising for various nanophotonic and thermal functionalities. Due to the universality and importance of isotopes, our vdW isotope heterostructuring method can be applied to engineer the properties of a broad range of materials.

Coupled Tamm Phonon and Plasmon Polaritons for Designer Planar Multiresonance Absorbers

Wavelength-selective absorbers (WS-absorbers) are of interest for various applications, including chemical sensing and light sources. Lithography-free fabrication of WS-absorbers can be realized via Tamm plasmon polaritons (TPPs) supported by distributed Bragg reflectors (DBRs) on plasmonic materials. While multifrequency and nearly arbitrary spectra can be realized with TPPs via inverse design algorithms, demanding and thick DBRs are required for high quality-factors (Q-factors) and/or multiband TPP-absorbers, increasing the cost and reducing fabrication error tolerance. Here, high Q-factor multiband absorption with limited DBR layers (3 layers) is experimentally demonstrated by Tamm hybrid polaritons (THPs) formed by coupling TPPs and Tamm phonon polaritons when modal frequencies are overlapped. Compared to the TPP component, the Q-factors of THPs are improved twofold, and the angular broadening is also reduced twofold, facilitating applications where narrow-band and nondispersive WS-absorbers are needed. Moreover, an open-source algorithm is developed to inversely design THP-absorbers consisting of anisotropic media and exemplify that the modal frequencies can be assigned to desirable positions. Furthermore, it is demonstrated that inversely designed THP-absorbers can realize same spectral resonances with fewer DBR layers than a TPP-absorber, thus reducing the fabrication complexity and enabling more cost-effective, lithography-free, wafer-scale WS-absorberss for applications such as free-space communications and gas sensing.

Phonon transition across an isotopic interface

Isotopic mixtures result in distinct properties of materials such as thermal conductivity and nuclear process. However, the knowledge of isotopic interface remains largely unexplored mainly due to the challenges in atomic-scale isotopic identification. Here, using electron energy-loss spectroscopy in a scanning transmission electron microscope, we reveal momentum-transfer-dependent phonon behavior at the h-¹⁰BN/h-¹¹BN isotope heterostructure with sub-unit-cell resolution. We find the phonons' energy changes gradually across the interface, featuring a wide transition regime. Phonons near the Brillouin zone center have a transition regime of ~3.34 nm, whereas phonons at the Brillouin zone boundary have a transition regime of ~1.66 nm. We propose that the isotope-induced charge effect at the interface accounts for the distinct delocalization behavior. Moreover, the variation of phonon energy between atom layers near the interface depends on both of momentum transfer and mass change. This study provides new insights into the isotopic effects in natural materials.

Identification of an Oxygen Defect in Hexagonal Boron Nitride

Paramagnetic fluorescent defects in two-dimensional hexagonal boron nitride (hBN) are promising building blocks for quantum information processing. Although numerous defect-related single-photon sources and a few quantum bits have been found, except for the boron vacancy, their identification is still elusive. Here, we demonstrate that the comparison of experimental and first-principles simulated electron paramagnetic resonance (EPR) spectra is a powerful tool for defect identification in hBN, and first-principles modeling is inevitable in this process as a result of the dense nuclear spin environment of hBN. In particular, a recently observed EPR center is associated with the negatively charged oxygen vacancy complex by means of the many-body perturbation theory method on top of hybrid density functional calculations. To our surprise, the negatively charged oxygen vacancy complex produces a coherent emission around 2 eV with a well-reproducing previously recorded photoluminescence spectrum of some quantum emitters, according to our calculations.

Reconfigurable hyperbolic polaritonics with correlated oxide metasurfaces

Polaritons enable subwavelength confinement and highly anisotropic flows of light over a wide spectral range, holding the promise for applications in modern nanophotonic and optoelectronic devices. However, to fully realize their practical application potential, facile methods enabling nanoscale active control of polaritons are needed. Here, we introduce a hybrid polaritonic-oxide heterostructure platform consisting of van der Waals crystals, such as hexagonal boron nitride (hBN) or alpha-phase molybdenum trioxide (α-MoO₃), transferred on nanoscale oxygen vacancy patterns on the surface of prototypical correlated perovskite oxide, samarium nickel oxide, SmNiO₃ (SNO). Using a combination of scanning probe microscopy and infrared nanoimaging techniques, we demonstrate nanoscale reconfigurability of complex hyperbolic phonon polaritons patterned at the nanoscale with high resolution. Hydrogenation and temperature modulation allow spatially localized conductivity modulation of SNO nanoscale patterns, enabling robust real-time modulation and nanoscale reconfiguration of hyperbolic polaritons. Our work paves the way towards nanoscale programmable metasurface engineering for reconfigurable nanophotonic applications.

Phonon polaritons in anisotropic van der Waals materials enable subwavelength confinement and controllable flow of light at the nanoscale. Here, the authors exploit correlated perovskite oxide (SmNiO₃) substrates with tunable conductivity to obtain real-time modulation and nanoscale reconfiguration of hyperbolic polaritons in hBN and α-MoO₃ crystals.

Decoherence of V[Formula: see text] spin defects in monoisotopic hexagonal boron nitride

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either 10B or 11B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first confirm that it corresponds to the negatively charged boron-vacancy center ([Formula: see text]). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of [Formula: see text] spin defects, which are valuable for the future development of hBN-based quantum sensing foils.

Polytypes of sp2-Bonded Boron Nitride

The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., different layer stacking sequences) with similar formation energies, which makes obtaining a pure monotype of single crystals extremely tricky. The co-existence of polytypes in a similar crystal leads to the formation of many interfaces and structural defects having a deleterious influence on the internal quantum efficiency of the light emission and on charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, which has shifted interest in sp2- bonded BN from basic science laboratories to optoelectronic and electrical device applications. Here, we describe some of the known physical properties of a variety of BN polytypes and their performances for deep ultraviolet emission in the specific case of second harmonic generation of light.

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface-mediated growth process for the controlled synthesis of high-quality monolayer hBN is proposed and further demonstrated. It is discovered that the in-plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single-domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep-ultraviolet emission at 6.12 eV stems from the 1s-exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer-scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

Engineering Interlayer Electron-Phonon Coupling in WS2/BN Heterostructures

In van der Waals (vdW) heterostructures, the interlayer electron-phonon coupling (EPC) provides one unique channel to nonlocally engineer these elementary particles. However, limited by the stringent occurrence conditions, the efficient engineering of interlayer EPC remains elusive. Here we report a multitier engineering of interlayer EPC in WS₂/boron nitride (BN) heterostructures, including isotope enrichments of BN substrates, temperature, and high-pressure tuning. The hyperfine isotope dependence of Raman intensities was unambiguously revealed. In combination with theoretical calculations, we anticipate that WS₂/BN supercells could induce Brillouin-zone-folded phonons that contribute to the interlayer coupling, leading to a complex nature of broad Raman peaks. We further demonstrate the significance of a previously unexplored parameter, the interlayer spacing. By varying the temperature and high pressure, we effectively manipulated the strengths of EPC with on/off capabilities, indicating critical thresholds of the layer-layer spacing for activating and strengthening interlayer EPC. Our findings provide new opportunities to engineer vdW heterostructures with controlled interlayer coupling.

Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy

The presence of metastable Bernal stacking boron nitride is verified by combining second harmonic generation (SHG) and photoluminescence (PL) spectroscopy. The scanning confocal cryomicroscope, operating in the deep-ultraviolet range, shows a one-to-one correlation between inversion symmetry breaking probed by SHG and the detection of an intense PL line at ∼6.035 eV, the specific signature of the noncentrosymmetric Bernal stacking. The coherent character of the Bernal phase in boron nitride crystals is demonstrated by two-photon excitation spectroscopy. Direct and indirect excitons are simultaneously detected in the emission spectrum; they are quasi-degenerate, in agreement with theoretical predictions for Bernal boron nitride. The transition from AA' to AB stacking is characterized by an intense emission from stacking faults at the grain boundaries of hexagonal and Bernal boron nitride crystals.

Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically thin and dangling bond-free insulating layer for next-generation electronics and optoelectronics, its practical implementation into miniaturized integrated circuits has been significantly limited due to difficulties in large-scale growth directly on epitaxial semiconductor wafers. Herein, the realization of a wafer-scale h-BN van der Waals heterostructure with a 2 in. AlGaN/GaN high-electron mobility transistor (HEMT) wafer using metal-organic chemical vapor deposition is presented. The combination of state-of-the-art microscopic and spectroscopic analyses and theoretical calculations reveals that the heterointerface between ∼2.5 nm-thick h-BN and AlGaN layers is atomically sharp and exhibits a very weak van der Waals interaction without formation of a ternary or quaternary alloy that can induce undesired degradation of device performance. The fabricated AlGaN/GaN HEMT with h-BN shows very promising performance including a cutoff frequency (f_T) and maximum oscillation frequency (f_MAX) as high as 28 and 88 GHz, respectively, enabled by an effective passivation of surface defects on the HEMT wafer to deliver accurate information with minimized power loss. These findings pave the way for practical implementation of 2D materials integrated with conventional microelectronic devices and the realization of future all-2D electronics.

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.

Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet

The optical response of 2D materials and their heterostructures is the subject of intense research with advanced investigation of the luminescence properties in devices made of exfoliated flakes of few- down to one-monolayer thickness. Despite its prevalence in 2D materials research, hexagonal boron nitride (hBN) remains unexplored in this ultimate regime because of its ultrawide bandgap of about 6 eV and the technical difficulties related to performing microscopy in the deep-ultraviolet domain. Here, we report hyperspectral imaging at wavelengths around 200 nm in exfoliated hBN at low temperature. In monolayer boron nitride, we observe direct-gap emission around 6.1 eV. In marked contrast to transition metal dichalcogenides, the photoluminescence signal is intense in few-layer hBN, a result of the near unity radiative efficiency in indirect-gap multilayer hBN.

Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.

Ultrahigh-Resolution, Label-Free Hyperlens Imaging in the Mid-IR

The hyperbolic phonon polaritons supported in hexagonal boron nitride (hBN) with long scattering lifetimes are advantageous for applications such as super-resolution imaging via hyperlensing. Yet, hyperlens imaging is challenging for distinguishing individual and closely spaced objects and for correlating the complicated hyperlens fields with the structure of an unknown object underneath. Here, we make significant strides to overcome each of these challenges. First, we demonstrate that monoisotopic h¹¹BN provides significant improvements in spatial resolution, experimentally resolving structures as small as 44 nm and those with sub 25 nm spacings at 6.76 μm free-space wavelength. We also present an image reconstruction algorithm that provides a structurally accurate, visual representation of the embedded objects from the complex hyperlens field. Further, we offer additional insights into optimizing hyperlens performance on the basis of material properties, with an eye toward realizing far-field imaging modalities. Thus, our results significantly advance label-free, high-resolution, spectrally selective hyperlens imaging and image reconstruction methodologies.

Temperature-dependent optical phonon shifts and splitting in cubic 10BP, natBP, and 11BP crystals

The infrared reflectance spectrum of cubic boron phosphide (BP) single crystals shows a very narrow Reststrahlen band, indicating a small TO-LO (transverse optical-longitudinal optical) splitting. To study the phonon thermal behavior of the TO(Γ) and the LO(Γ) of ¹⁰BP, ^natBP, and ¹¹BP bulk single crystals, temperature-dependent infrared reflectance spectroscopy in 85-500 K is applied here. As the temperature increases, the Reststrahlen band broadens. The frequencies of the TO(Γ) and the LO(Γ) exhibit nonlinear red shifts, and the TO-LO splitting gradually increases. Our research found that thermal expansion plays a leading role at low temperatures while phonon anharmonicity gradually takes place at high temperatures.

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from Fe fluxes

High-quality hexagonal BN (hBN) crystals, owing to their irreplaceable roles in new functional devices such as universal substrates and excellent layered insulators are exceedingly required in the field of two-dimensional (2D) materials. Although large-scale monolayer hBN crystals have been successfully grown on catalytic metals, the synthesis of large-area continuous hBN films with thickness in microns is challenging, hindering their applications at the mesoscopic level. Herein, we report the single-metal flux growth of centimeter-large, micron-thick, and high-quality continuous hBN films by balancing the grain size and coverage. The as-grown films can be readily exfoliated and transferred onto arbitrary substrates. Isotopically engineered hBN crystals can be obtained as well by the method. The narrow Raman line widths of the intralayer E2g mode peak (2.9 cm-1 for h11BN, 3.3 cm-1 for h10BN, and 7.9 cm-1 for hNaBN) and ultrahigh thermal conductivity (830 W m-1 K-1 for 4L h11BN) demonstrate high crystal quality and low defect density. Our results provide the foundation for the cost-efficient and lab-achievable synthesis of high-quality hBN films aimed at its mesoscopic applications.

Guided Mid-IR and Near-IR Light within a Hybrid Hyperbolic-Material/Silicon Waveguide Heterostructure

Silicon waveguides have enabled large-scale manipulation and processing of near-infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies will further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free-space wavelength. This paper demonstrates that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can simultaneously enable dual-band operation at both mid-infrared (6.5-7.0 µm) and telecom (1.55 µm) frequencies, respectively. The device is realized via the lithography-free transfer of hBN onto a silicon waveguide, maintaining near-infrared operation. In addition, mid-infrared waveguiding of the hyperbolic phonon polaritons (HPhPs) supported in hBN is induced by the index contrast between the silicon waveguide and the surrounding air underneath the hBN, thereby eliminating the need for deleterious etching of the hyperbolic medium. The behavior of HPhP waveguiding in both straight and curved trajectories is validated within an analytical waveguide theoretical framework. This exemplifies a generalizable approach based on integrating hyperbolic media with silicon photonics for realizing frequency multiplexing in on-chip photonic systems.

Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride

Materials with high thermal conductivities (κ) are valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest κ among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with ^{11}B has a κ up to 1009  W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterings between ZO and transverse acoustic (TA) and longitudinal acoustic phonons. On the other hand, reducing the thickness to a single atomic layer diminishes the interlayer interactions and hence umklapp scatterings of the out-of-plane acoustic (ZA) phonons, though this thickness-induced κ enhancement is not as dramatic as that in naturally occurring BN. With many of its unique properties, atomically thin monoisotopic BN is promising on heat management in van der Waals devices and future flexible electronics. The isotope engineering of atomically thin BN may also open up other appealing applications and opportunities in 2D materials yet to be explored.

Isotopic Disorder: The Prevailing Mechanism in Limiting the Phonon Lifetime in Hexagonal BN

The phonon linewidth of isotopically controlled hexagonal boron nitride (h-BN) single crystals has been determined by Raman scattering. The scattering by isotopic mass disorder induces a phonon broadening that is largest for boron 11 fractions around 0.65. Lowest-order perturbation theory does not suffice to explain the dependence of the isotopic broadening on isotopic composition. A multiple-scattering theory based on the coherent potential approximation provides a good quantitative account of the phonon shift and broadening with isotopic composition observed in the experiments. Isotopic-disorder scattering is shown to have a prominent role in limiting the optical-phonon lifetime in h-BN.

Nanosecond transient thermoreflectance method for characterizing anisotropic thermal conductivity

A method is presented to characterize the anisotropic thermal properties of materials based on nanosecond transient thermoreflectance (TTR). An analytical heat transfer model is derived for the TTR signal, showing that the signal is sensitive to out-of-plane and in-plane heat conductions at distinct time scales. This sensitivity feature can be exploited to simultaneously determine the out-of-plane and in-plane thermal conductivities. Examples are given for molybdenum disulphide, hexagonal boron nitride, and highly oriented pyrolytic graphite to assess the validity of this method.

Tribological and Thermophysical Properties of Environmentally-Friendly Lubricants Based on Trimethylolpropane Trioleate with Hexagonal Boron Nitride Nanoparticles as an Additive

Dispersions based on hexagonal boron nitride, h-BN, nanoparticles, at 0.50, 0.75 and 1.0 wt.% mass concentrations, in an ester base oil composed mainly of trimethylolpropane trioleate, were investigated as potential nanolubricants. The stability of the dispersions was assessed to determine the reliability of the tribological, thermophysical and rheological measurements. Density and viscosity were measured from 278.15 to 373.15 K, while rheological behavior was analyzed at shear rates from 1 to 1000 s−1 at 283.15 K. Newtonian behavior was exhibited by all nanolubricants at the explored conditions, with the exception of the highest concentration at the lowest shear rates, where possible non-Newtonian behavior was observed. Tribological tests were performed under a normal load of 2.5 N. Wear was evaluated by means of a 3D profiler, scanning electron microscopy and confocal Raman microscopy. The best tribological performance was achieved by the 0.75 wt.% nanolubricant, with reductions of 25% in the friction coefficient, 9% in the scar width, 14% in the scar depth, and 22% of the transversal area, all with respect to the neat oil. It was observed that physical protective tribofilms are created between rubbing surfaces.

Direct band-gap crossover in epitaxial monolayer boron nitride

Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain largely unexplored. In particular, the theoretically expected crossover to a direct-gap in the limit of the single monolayer is presently not confirmed experimentally. Here, in contrast to the technique of exfoliating few-layer 2D hexagonal boron nitride, we exploit the scalable approach of high-temperature molecular beam epitaxy to grow high-quality monolayer boron nitride on graphite substrates. We combine deep-ultraviolet photoluminescence and reflectance spectroscopy with atomic force microscopy to reveal the presence of a direct gap of energy 6.1 eV in the single atomic layers, thus confirming a crossover to direct gap in the monolayer limit.

Exciton-Phonon Coupling in the Ultraviolet Absorption and Emission Spectra of Bulk Hexagonal Boron Nitride

We present an ab initio method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN, which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyze the excitons at the wave vector q[over ¯] of the indirect gap. The coupling of these excitons with the various phonon modes at q[over ¯] is expressed in terms of a product of the mean square displacement of the atoms and the second derivative of the optical response function with respect to atomic displacement along the phonon eigenvectors. The derivatives are calculated numerically with a finite difference scheme in a supercell commensurate with q[over ¯]. We use detailed balance arguments to obtain the intensity ratio between emission and absorption processes. Our results explain recent luminescence experiments and reveal the exciton-phonon coupling channels responsible for the emission lines.

Isotope Effect in Bilayer WSe2

Isotopes of an element have the same electron number but differ in neutron number and atomic mass. However, due to the thickness-dependent properties in MX₂ (M = Mo, W; X = S, Se, Te) transition metal dichalcogenides (TMDs), the isotopic effect in atomically thin TMDs still remains unclear especially for phonon-assisted indirect excitonic transitions. Here, we report the first observation of the isotope effect on the electronic and vibrational properties of a TMD material, using naturally abundant ^NAW^NASe₂ and isotopically pure ¹⁸⁶W⁸⁰Se₂ bilayer single crystals over a temperature range of 4.4-300 K. We demonstrate a higher optical band gap energy in ¹⁸⁶W⁸⁰Se₂ than in ^NAW^NASe₂ (3.9 ± 0.7 meV from 4.41 to 300 K), which is surprising as isotopes are neutral impurities. Phonon energies decrease in the isotopically pure crystal due to the atomic mass dependence of harmonic oscillations, with correspondingly longer E_2g and A²_1g phonon lifetimes than in the naturally abundant sample. The change in electronic band gap renormalization energy is postulated as being the dominant mechanism responsible for the change in optical emission spectra.

Isotope-Engineering the Thermal Conductivity of Two-Dimensional MoS2

Isotopes represent a degree of freedom that might be exploited to tune the physical properties of materials while preserving their chemical behaviors. Here, we demonstrate that the thermal properties of two-dimensional (2D) transition-metal dichalcogenides can be tailored through isotope engineering. Monolayer crystals of MoS₂ were synthesized with isotopically pure ¹⁰⁰Mo and ⁹²Mo by chemical vapor deposition employing isotopically enriched molybdenum oxide precursors. The in-plane thermal conductivity of the ¹⁰⁰MoS₂ monolayers, measured using a non-destructive, optothermal Raman technique, is found to be enhanced by ∼50% compared with the MoS₂ synthesized using mixed Mo isotopes from naturally occurring molybdenum oxide. The boost of thermal conductivity in isotopically pure MoS₂ monolayers is attributed to the combined effects of reduced isotopic disorder and a reduction in defect-related scattering, consistent with observed stronger photoluminescence and longer exciton lifetime. These results shed light on the fundamentals of 2D nanoscale thermal transport important for the optimization of 2D electronic devices.

Reconfigurable infrared hyperbolic metasurfaces using phase change materials

Metasurfaces control light propagation at the nanoscale for applications in both free-space and surface-confined geometries. However, dynamically changing the properties of metasurfaces can be a major challenge. Here we demonstrate a reconfigurable hyperbolic metasurface comprised of a heterostructure of isotopically enriched hexagonal boron nitride (hBN) in direct contact with the phase-change material (PCM) single-crystal vanadium dioxide (VO2). Metallic and dielectric domains in VO2 provide spatially localized changes in the local dielectric environment, enabling launching, reflection, and transmission of hyperbolic phonon polaritons (HPhPs) at the PCM domain boundaries, and tuning the wavelength of HPhPs propagating in hBN over these domains by a factor of 1.6. We show that this system supports in-plane HPhP refraction, thus providing a prototype for a class of planar refractive optics. This approach offers reconfigurable control of in-plane HPhP propagation and exemplifies a generalizable framework based on combining hyperbolic media and PCMs to design optical functionality.

Nanoscale surface dynamics of Bi2Te3(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator Bi2Te3. Using high-resolution helium-3 spin-echo spectroscopy we are able to resolve the acoustic phonon modes of Bi2Te3(111). The low energy region of the lattice vibrations is mainly dominated by the Rayleigh mode which has been claimed to be absent in previous experimental studies. The appearance of the Rayleigh mode is consistent with previous bulk lattice dynamics studies as well as theoretical predictions of the surface phonon modes. Density functional perturbation theory calculations including van der Waals corrections are in excellent agreement with the experimental data. Comparison of the experimental results with theoretically obtained values for films with a thickness of several layers further demonstrate, that for an accurate theoretical description of three-dimensional topological insulators with their layered structure the inclusion of van der Waals corrections is essential. The presence of a prominent surface acoustic wave and the contribution of van der Waals bonding to the lattice dynamics may hold important implications for the thermoelectric properties of thin-film and nanoscale devices.