1
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Singh R, Yadav SK, Kumar R, Haldar A, Kumar P. Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni 80Fe 20/TI (Bi 2Te 3/Bi 2Se 3/Bi 2Te 2Se)/p-Si devices. Phys Chem Chem Phys 2024. [PMID: 38814090 DOI: 10.1039/d4cp01557f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
This study demonstrates the fabrication and study of a permalloy (Py)/topological insulator heterojunction, i.e., the Ni80Fe20/TI(Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si heterojunction, for spintronic device applications at room temperature. In this work, the forward current values, under the absence of a magnetic field, for Ni80Fe20/Bi2Te2Se/p-Si, Ni80Fe20/Bi2Se3/p-Si, and Ni80Fe20/Bi2Te3/p-Si heterojunctions were 12.7 μA, 8.7 μA, and 6.85 μA, respectively; while in the presence of a magnetic field, the corresponding values were 10.8 μA, 7.6 μA, and 4.47 μA, respectively. Such reductions in current were attributed to an increase in the resistance of the p-n junction diode due to Lorentz force and a magnetoresistance effect, which was also verified using magneto-transport measurements. This resulted in a modification of the space charge shape and an increase in the potential barrier. Along with this, the magnetic field also affected the diffusion length, leading to a reduction in the current. Such a phenomenon enables the development of durable devices with improved reliability and longevity under harsh environments. The special features of topological edge states in the presence of a magnetic field can be used for sophisticated sensing applications. The future applications will likely lead to the emergence of other novel applications across disciplines such as computing, health, materials science, and energy harvesting.
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Affiliation(s)
- Roshani Singh
- Spintronic and Magnetic Materials Laboratory, Department of Applied sciences, Indian Institute of Information Technology, Allahabad, Prayagraj, 211015, India.
| | - Surendra Kumar Yadav
- Spintronic and Magnetic Materials Laboratory, Department of Applied sciences, Indian Institute of Information Technology, Allahabad, Prayagraj, 211015, India.
| | - Rachana Kumar
- CSIR - Indian Institute of Toxicology Research, Lucknow-226001, India
| | - Arabinda Haldar
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi 502284, Telangana, India
| | - Pramod Kumar
- Spintronic and Magnetic Materials Laboratory, Department of Applied sciences, Indian Institute of Information Technology, Allahabad, Prayagraj, 211015, India.
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2
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Sie EJ, Othman MAK, Nyby CM, Pemmaraju D, Garcia CAC, Wang Y, Guzelturk B, Xia C, Xiao J, Poletayev A, Ofori-Okai BK, Hoffmann MC, Park S, Shen X, Yang J, Li R, Reid AH, Weathersby S, Muscher P, Finney N, Rhodes D, Balicas L, Nanni E, Hone J, Chueh W, Devereaux TP, Narang P, Heinz TF, Wang X, Lindenberg AM. Giant Terahertz Birefringence in an Ultrathin Anisotropic Semimetal. NANO LETTERS 2024; 24:6031-6037. [PMID: 38717626 DOI: 10.1021/acs.nanolett.4c00758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
Manipulating the polarization of light at the nanoscale is key to the development of next-generation optoelectronic devices. This is typically done via waveplates using optically anisotropic crystals, with thicknesses on the order of the wavelength. Here, using a novel ultrafast electron-beam-based technique sensitive to transient near fields at THz frequencies, we observe a giant anisotropy in the linear optical response in the semimetal WTe2 and demonstrate that one can tune the THz polarization using a 50 nm thick film, acting as a broadband wave plate with thickness 3 orders of magnitude smaller than the wavelength. The observed circular deflections of the electron beam are consistent with simulations tracking the trajectory of the electron beam in the near field of the THz pulse. This finding offers a promising approach to enable atomically thin THz polarization control using anisotropic semimetals and defines new approaches for characterizing THz near-field optical response at far-subwavelength length scales.
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Affiliation(s)
- Edbert J Sie
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Mohamed A K Othman
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Clara M Nyby
- Department of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Das Pemmaraju
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Christina A C Garcia
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge Massachusetts 02138, United States
| | - Yaxian Wang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge Massachusetts 02138, United States
| | - Burak Guzelturk
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Chenyi Xia
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Andrey Poletayev
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | | | - Matthias C Hoffmann
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Suji Park
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jie Yang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Renkai Li
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Alexander H Reid
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen Weathersby
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Philipp Muscher
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Nathan Finney
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Daniel Rhodes
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Luis Balicas
- National High Magnetic Field Laboratory and Department of Physics, Florida State University, Tallahassee, Florida 32310, United States
| | - Emilio Nanni
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - William Chueh
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Thomas P Devereaux
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Prineha Narang
- College of Letters and Science, University of California, Los Angeles, California 90095, United States
| | - Tony F Heinz
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Faculty of Physics, University of Duisburg-Essen, 47057 Duisburg, Germany
- Department of Physics, University of Dortmund, 44221 Dortmund, Germany
| | - Aaron M Lindenberg
- Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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3
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Fukumoto K, Lee S, Adachi SI, Suzuki Y, Kusakabe K, Yamamoto R, Kitatani M, Ishida K, Nakagawa Y, Merkel M, Shiga D, Kumigashira H. Surface terminations control charge transfer from bulk to surface states in topological insulators. Sci Rep 2024; 14:10537. [PMID: 38719934 PMCID: PMC11079079 DOI: 10.1038/s41598-024-61172-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Accepted: 05/02/2024] [Indexed: 05/12/2024] Open
Abstract
Topological insulators (TI) hold significant potential for various electronic and optoelectronic devices that rely on the Dirac surface state (DSS), including spintronic and thermoelectric devices, as well as terahertz detectors. The behavior of electrons within the DSS plays a pivotal role in the performance of such devices. It is expected that DSS appear on a surface of three dimensional(3D) TI by mechanical exfoliation. However, it is not always the case that the surface terminating atomic configuration and corresponding band structures are homogeneous. In order to investigate the impact of surface terminating atomic configurations on electron dynamics, we meticulously examined the electron dynamics at the exfoliated surface of a crystalline 3D TI (Bi2 Se3 ) with time, space, and energy resolutions. Based on our comprehensive band structure calculations, we found that on one of the Se-terminated surfaces, DSS is located within the bulk band gap, with no other surface states manifesting within this region. On this particular surface, photoexcited electrons within the conduction band effectively relax towards DSS and tend to linger at the Dirac point for extended periods of time. It is worth emphasizing that these distinct characteristics of DSS are exclusively observed on this particular surface.
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Affiliation(s)
- Keiki Fukumoto
- High energy accelerator research organization (KEK), 1-1 Oho, Tsukuba, Ibaraki, 305-0801, Japan.
| | - Seunghee Lee
- High energy accelerator research organization (KEK), 1-1 Oho, Tsukuba, Ibaraki, 305-0801, Japan
| | - Shin-Ichi Adachi
- High energy accelerator research organization (KEK), 1-1 Oho, Tsukuba, Ibaraki, 305-0801, Japan
| | - Yuta Suzuki
- The Graduate University for Advanced Studies (SOKENDAI), Hayama, Kanagawa, 240-0193, Japan
| | - Koichi Kusakabe
- University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297, Japan
| | - Rikuto Yamamoto
- University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297, Japan
| | - Motoharu Kitatani
- University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297, Japan
| | - Kunio Ishida
- Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi, 321-8585, Japan
| | | | - Michael Merkel
- FOCUS GmbH, Neukirchner Str.2, 65510, Huenstetten, Germany
| | - Daisuke Shiga
- Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, 980-8577, Japan
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4
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Huang S, Ghosh N, Niu C, Chen YP, Ye PD, Xu X. Optically Gated Electrostatic Field-Effect Thermal Transistor. NANO LETTERS 2024; 24:5139-5145. [PMID: 38639471 DOI: 10.1021/acs.nanolett.3c05085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Dynamic tuning of thermal transport in solids is scientifically intriguing with wide applications for thermal transport control in electronic devices. In this work, we demonstrate a thermal transistor, a device in which heat flow can be regulated using external control, realized in a topological insulator (TI) through the topological surface states. The tuning of thermal transport is achieved by using optical gating of a thin dielectric layer deposited on the TI film. The gate-dependent thermal conductivity is measured using micro-Raman thermometry. The transistor has a large ON/OFF ratio of 2.8 at room temperature and can be continuously and repetitively switched in tens of seconds by optical gating and potentially much faster by electrical gating. Such thermal transistors with a large ON/OFF ratio and fast switching times offer the possibilities of smart thermal devices for active thermal management and control in future electronic systems.
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Affiliation(s)
- Shouyuan Huang
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Neil Ghosh
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Chang Niu
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xianfan Xu
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
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5
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Wang T, Yu X. Helicity-Sensitive Terahertz Detection in Monolayer 1T'-WTe 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38619870 DOI: 10.1021/acsami.3c18898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Valleytronics, identified as electronic properties of the energy band extrema in momentum space, has been intensively revived following the emergence of two-dimensional transition metal dichalcogenides (TMDCs) as their valley information can be controlled and probed through the spin angular momentum of light. Previous optical investigations of valleytronics have been limited to the visible/near-infrared spectral regime through which the carriers of most TMDCs can be excited. Monolayer 1T'-WTe2 with broken time-reversal symmetry provides a fertile platform to study the long-wavelength photonic properties in different valleys. Here, we employed a circularly polarized terahertz (THz) laser to selectively excite the valley of monolayer 1T'-WTe2 and demonstrate that the helicity-dependent photoresponse is generated via the photogalvanic effect (PGE). We also observed that the photocurrent is controlled by circular polarization and the external electric field. Because of the tunable Berry curvature dipole derived from the nontrivial wave functions near the inverted gap edge in monolayer WTe2, the bandgap can be tuned efficiently. Our results provide a versatile venue for controlling, detecting, and processing valleytronics and applications in on-chip THz imaging and quantum information processing.
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Affiliation(s)
- Ting Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xuechao Yu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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6
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Mitra S, Jiménez-Galán Á, Aulich M, Neuhaus M, Silva REF, Pervak V, Kling MF, Biswas S. Light-wave-controlled Haldane model in monolayer hexagonal boron nitride. Nature 2024; 628:752-757. [PMID: 38622268 PMCID: PMC11041748 DOI: 10.1038/s41586-024-07244-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 02/27/2024] [Indexed: 04/17/2024]
Abstract
In recent years, the stacking and twisting of atom-thin structures with matching crystal symmetry has provided a unique way to create new superlattice structures in which new properties emerge1,2. In parallel, control over the temporal characteristics of strong light fields has allowed researchers to manipulate coherent electron transport in such atom-thin structures on sublaser-cycle timescales3,4. Here we demonstrate a tailored light-wave-driven analogue to twisted layer stacking. Tailoring the spatial symmetry of the light waveform to that of the lattice of a hexagonal boron nitride monolayer and then twisting this waveform result in optical control of time-reversal symmetry breaking5 and the realization of the topological Haldane model6 in a laser-dressed two-dimensional insulating crystal. Further, the parameters of the effective Haldane-type Hamiltonian can be controlled by rotating the light waveform, thus enabling ultrafast switching between band structure configurations and allowing unprecedented control over the magnitude, location and curvature of the bandgap. This results in an asymmetric population between complementary quantum valleys that leads to a measurable valley Hall current7, which can be detected by optical harmonic polarimetry. The universality and robustness of our scheme paves the way to valley-selective bandgap engineering on the fly and unlocks the possibility of creating few-femtosecond switches with quantum degrees of freedom.
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Affiliation(s)
- Sambit Mitra
- Max Planck Institute of Quantum Optics, Garching, Germany
- Physics Department, Ludwig-Maximilian University of Munich, Garching, Germany
| | - Álvaro Jiménez-Galán
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain.
- Max Born Institute, Berlin, Germany.
| | - Mario Aulich
- Physics Department, Ludwig-Maximilian University of Munich, Garching, Germany
- SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Marcel Neuhaus
- Max Planck Institute of Quantum Optics, Garching, Germany
- Physics Department, Ludwig-Maximilian University of Munich, Garching, Germany
- SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Rui E F Silva
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain
| | - Volodymyr Pervak
- Max Planck Institute of Quantum Optics, Garching, Germany
- Physics Department, Ludwig-Maximilian University of Munich, Garching, Germany
| | - Matthias F Kling
- Max Planck Institute of Quantum Optics, Garching, Germany
- Physics Department, Ludwig-Maximilian University of Munich, Garching, Germany
- SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- Department of Applied Physics, Stanford University, Stanford, CA, USA
| | - Shubhadeep Biswas
- Max Planck Institute of Quantum Optics, Garching, Germany.
- Physics Department, Ludwig-Maximilian University of Munich, Garching, Germany.
- SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
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7
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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8
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Chen Z, Qiu H, Cheng X, Cui J, Jin Z, Tian D, Zhang X, Xu K, Liu R, Niu W, Zhou L, Qiu T, Chen Y, Zhang C, Xi X, Song F, Yu R, Zhai X, Jin B, Zhang R, Wang X. Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe 2 thin films. Nat Commun 2024; 15:2605. [PMID: 38521797 PMCID: PMC10960839 DOI: 10.1038/s41467-024-46821-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 03/12/2024] [Indexed: 03/25/2024] Open
Abstract
Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.
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Affiliation(s)
- Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Hongsong Qiu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xinjuan Cheng
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, University of Shanghai for Science and Technology, 200093, Shanghai, China
| | - Da Tian
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Kankan Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China
| | - Tianyu Qiu
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Caihong Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xiaoxiang Xi
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Fengqi Song
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xuechao Zhai
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China.
| | - Biaobing Jin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
- Purple Mountain Laboratories, 211111, Nanjing, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
- Department of Physics, Xiamen University, 361005, Xiamen, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
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9
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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10
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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11
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Pettine J, Padmanabhan P, Shi T, Gingras L, McClintock L, Chang CC, Kwock KWC, Yuan L, Huang Y, Nogan J, Baldwin JK, Adel P, Holzwarth R, Azad AK, Ronning F, Taylor AJ, Prasankumar RP, Lin SZ, Chen HT. Light-driven nanoscale vectorial currents. Nature 2024; 626:984-989. [PMID: 38326619 PMCID: PMC10901733 DOI: 10.1038/s41586-024-07037-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 01/05/2024] [Indexed: 02/09/2024]
Abstract
Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and information, as probes of material properties and dynamics1 and as a means of revealing2,3 or even inducing4,5 broken symmetries. Emerging methods for light-based current control5-16 offer particularly promising routes beyond the speed and adaptability limitations of conventional voltage-driven systems. However, optical generation and manipulation of currents at nanometre spatial scales remains a basic challenge and a crucial step towards scalable optoelectronic systems for microelectronics and information science. Here we introduce vectorial optoelectronic metasurfaces in which ultrafast light pulses induce local directional charge flows around symmetry-broken plasmonic nanostructures, with tunable responses and arbitrary patterning down to subdiffractive nanometre scales. Local symmetries and vectorial currents are revealed by polarization-dependent and wavelength-sensitive electrical readout and terahertz (THz) emission, whereas spatially tailored global currents are demonstrated in the direct generation of elusive broadband THz vector beams17. We show that, in graphene, a detailed interplay between electrodynamic, thermodynamic and hydrodynamic degrees of freedom gives rise to rapidly evolving nanoscale driving forces and charge flows under the extremely spatially and temporally localized excitation. These results set the stage for versatile patterning and optical control over nanoscale currents in materials diagnostics, THz spectroscopies, nanomagnetism and ultrafast information processing.
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Affiliation(s)
- Jacob Pettine
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA.
| | - Prashant Padmanabhan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Teng Shi
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | - Luke McClintock
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Physics, University of California, Davis, Davis, CA, USA
| | - Chun-Chieh Chang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Kevin W C Kwock
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Fu Foundation School of Engineering and Applied Science, Columbia University, New York, NY, USA
| | - Long Yuan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Yue Huang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - John Nogan
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, USA
| | - Jon K Baldwin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | | | - Abul K Azad
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Filip Ronning
- Institute for Materials Science, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Antoinette J Taylor
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Intellectual Ventures, Bellevue, WA, USA
| | - Shi-Zeng Lin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Hou-Tong Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA.
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12
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Connelly BC, Taylor PJ, de Coster GJ. Emergence of threefold symmetric helical photocurrents in epitaxial low twinned Bi 2Se 3. Proc Natl Acad Sci U S A 2024; 121:e2307425121. [PMID: 38271339 PMCID: PMC10835140 DOI: 10.1073/pnas.2307425121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Accepted: 11/29/2023] [Indexed: 01/27/2024] Open
Abstract
We present evidence of a strong circular photon drag effect (PDE) in topological insulators (TIs) through the observation of helicity-dependent topological photocurrents with threefold rotational symmetry using THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. We establish how twinned domains introduce competing nonlinear optical (NLO) responses inherent to the crystal structure that obscure geometry-sensitive optical processes through the introduction of a spurious mirror symmetry. Minimizing the twinning defect reveals strong NLO response currents whose magnitude and direction depend on the alignment of the excitation to the crystal axes and follow the threefold rotational symmetry of the crystal. Notably, photocurrents arising from helical light reverse direction for left/right circular polarizations and maintain a strong azimuthal dependence-a result uniquely attributable to the circular PDE, where the photon momentum acts as an applied in-plane field stationary in the laboratory frame. Our results demonstrate new levels of control over the magnitude and direction of photocurrents in TIs and that the study of single-domain films is crucial to reveal hidden phenomena that couple topological order and crystal symmetries.
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Affiliation(s)
- Blair C. Connelly
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
| | - Patrick J. Taylor
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
| | - George J. de Coster
- U.S. Army Combat Capabilities Development Command Army Research Laboratory, Adelphi, MD20783
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13
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Nandi S, Cohen SZ, Singh D, Poplinger M, Nanikashvili P, Naveh D, Lewi T. Unveiling Local Optical Properties Using Nanoimaging Phase Mapping in High-Index Topological Insulator Bi 2Se 3 Resonant Nanostructures. NANO LETTERS 2023; 23:11501-11509. [PMID: 37890054 DOI: 10.1021/acs.nanolett.3c03128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2023]
Abstract
Topological insulators are materials characterized by an insulating bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic properties have been extensively studied, their mid-infrared (MIR) properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy to study chemical vapor deposition-grown Bi2Se3 nanobeams (NBs). We extract the MIR optical constants of Bi2Se3, revealing refractive index values as high as n ∼ 6.4, and demonstrate that the NBs support Mie resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with finite-difference time-domain simulations. This work highlights the potential of Bi2Se3 for quantum circuitry, nonlinear generation, high-Q metaphotonics, and photodetection.
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Affiliation(s)
- Sukanta Nandi
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Shany Z Cohen
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Danveer Singh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Michal Poplinger
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Pilkhaz Nanikashvili
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Tomer Lewi
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
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14
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Wu W, Yu J, Chen YH, Liu Y, Cheng S, Lai Y, Sun J, Zhou H, He K. Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi 2O 2Se Nanosheets. ACS NANO 2023; 17:16633-16643. [PMID: 37458508 DOI: 10.1021/acsnano.3c02812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/14/2023]
Abstract
Bismuth oxyselenide (Bi2O2Se) is a two-dimensional (2D) layered semiconductor material with high electron Hall mobility and excellent environmental stability as well as strong spin-orbit interaction (SOI), which has attracted intense attention for application in spintronic and spin optoelectronic devices. However, a comprehensive study of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent (HDPC) was investigated in Bi2O2Se nanosheets. By analyzing the dependence of HDPC on the angle of incidence, we find that the HDPC originates from surface states with Cs symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect (CPGE) and circular photon drag effect (CPDE). It is revealed that the HDPC current almost changes linearly with the source-drain voltage. Furthermore, we demonstrate effective tuning of HDPC in Bi2O2Se by ionic liquid gating, indicating that the spin splitting of the surface electronic structure is effectively tuned. By analyzing the gate voltage dependence of HDPC, we can unambiguously identify the surface polarity and the surface electronic structure of Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstrate that 2D Bi2O2Se nanosheets may provide a good platform for opto-spintronics devices.
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Affiliation(s)
- Wenyi Wu
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, Guangdong, P. R. China
| | - Jinling Yu
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Yong-Hai Chen
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yu Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Shuying Cheng
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Yunfeng Lai
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jie Sun
- National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350100, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Hai Zhou
- International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, Guangdong, P. R. China
| | - Ke He
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
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15
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Duan S, Qin F, Chen P, Yang X, Qiu C, Huang J, Liu G, Li Z, Bi X, Meng F, Xi X, Yao J, Ideue T, Lian B, Iwasa Y, Yuan H. Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces. NATURE NANOTECHNOLOGY 2023; 18:867-874. [PMID: 37322146 DOI: 10.1038/s41565-023-01417-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 05/14/2023] [Indexed: 06/17/2023]
Abstract
The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.
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Affiliation(s)
- Siyu Duan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xupeng Yang
- Institute of Physics, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanhao Meng
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Jie Yao
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, Japan.
| | - Biao Lian
- Department of Physics, Princeton University, Princeton, NJ, USA.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- RIKEN Center for Emergent Matter Science, Wako, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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16
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Liu X, Tao B, Wang Y, Yin H. Pure spin current in a cobalt phthalocyanine chain induced by the photogalvanic effect. Phys Chem Chem Phys 2023. [PMID: 37464927 DOI: 10.1039/d3cp01530k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
The development of methods for generating pure spin current at the molecular level is vital. In this work, we investigated how the spin-related photocurrent is produced in a cobalt phthalocyanine chain by the photogalvanic effect (PGE). Depending on how the magnetic moments of the left and right halves of the cobalt phthalocyanine chain are arranged, spin current can be generated. Both charge current and spin current are absent when the magnetic moments are arranged in parallel. Pure spin currents are generated when the magnetic moments are arranged in an antiparallel manner. Importantly, the pure spin current is robust to the polarization type and polarization angle. This characteristic results from the structure's charge density having spatial inversion symmetry but lacking that of the spin density.
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Affiliation(s)
- Xiaojie Liu
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
| | - Bairui Tao
- College of Communications and Electronics Engineering, Qiqihar University, Qiqihar, 161006, China
| | - Yin Wang
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China
| | - Haitao Yin
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
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17
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Liang G, Zhai G, Ma J, Wang H, Zhao J, Wu X, Zhang X. Circular Photogalvanic Current in Ni-Doped Cd 3As 2 Films Epitaxied on GaAs(111)B Substrate. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1979. [PMID: 37446495 DOI: 10.3390/nano13131979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 06/26/2023] [Accepted: 06/28/2023] [Indexed: 07/15/2023]
Abstract
Magnetic element doped Cd3As2 Dirac semimetal has attracted great attention for revealing the novel quantum phenomena and infrared opto-electronic applications. In this work, the circular photogalvanic effect (CPGE) was investigated at various temperatures for the Ni-doped Cd3As2 films which were grown on GaAs(111)B substrate by molecular beam epitaxy. The CPGE current generation was found to originate from the structural symmetry breaking induced by the lattice strain and magnetic doping in the Ni-doped Cd3As2 films, similar to that in the undoped ones. However, the CPGE current generated in the Ni-doped Cd3As2 films was approximately two orders of magnitude smaller than that in the undoped one under the same experimental conditions and exhibited a complex temperature variation. While the CPGE current in the undoped film showed a general increase with rising temperature. The greatly reduced CPGE current generation efficiency and its complex variation with temperature in the Ni-doped Cd3As2 films was discussed to result from the efficient capture of photo-generated carriers by the deep-level magnetic impurity bands and enhanced momentum relaxation caused by additional strong impurity scattering when magnetic dopants were introduced.
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Affiliation(s)
- Gaoming Liang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guihao Zhai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jialin Ma
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoguang Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinhui Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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18
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Hou B, Wang D, Barker BA, Qiu DY. Exchange-Driven Intermixing of Bulk and Topological Surface States by Chiral Excitons in Bi_{2}Se_{3}. PHYSICAL REVIEW LETTERS 2023; 130:216402. [PMID: 37295093 DOI: 10.1103/physrevlett.130.216402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 02/17/2023] [Accepted: 05/01/2023] [Indexed: 06/12/2023]
Abstract
Topological surface states (TSS) in the prototypical topological insulator (TI) Bi_{2}Se_{3} are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the TSS remain unexplored. Here, we use ab initio calculations to understand excitonic effects in the bulk and surface of Bi_{2}Se_{3}. We identify multiple series of chiral excitons that exhibit both bulk and TSS character, due to exchange-driven mixing. Our results address fundamental questions about the degree to which electron-hole interactions can relax the topological protection of surface states and dipole selection rules for circularly polarized light in TIs by elucidating the complex intermixture of bulk and surface states excited in optical measurements and their coupling to light.
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Affiliation(s)
- Bowen Hou
- Department of Mechanical Engineering and Material Sciences, Yale University, New Haven, Connecticut 06511, USA
| | - Dan Wang
- Department of Mechanical Engineering and Material Sciences, Yale University, New Haven, Connecticut 06511, USA
| | - Bradford A Barker
- Department of Physics, University of California, Merced, California 95343, USA
| | - Diana Y Qiu
- Department of Mechanical Engineering and Material Sciences, Yale University, New Haven, Connecticut 06511, USA
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19
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Boland JL, Damry DA, Xia CQ, Schönherr P, Prabhakaran D, Herz LM, Hesjedal T, Johnston MB. Narrowband, Angle-Tunable, Helicity-Dependent Terahertz Emission from Nanowires of the Topological Dirac Semimetal Cd 3As 2. ACS PHOTONICS 2023; 10:1473-1484. [PMID: 37215322 PMCID: PMC10197169 DOI: 10.1021/acsphotonics.3c00068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Indexed: 05/24/2023]
Abstract
All-optical control of terahertz pulses is essential for the development of optoelectronic devices for next-generation quantum technologies. Despite substantial research in THz generation methods, polarization control remains difficult. Here, we demonstrate that by exploiting band structure topology, both helicity-dependent and helicity-independent THz emission can be generated from nanowires of the topological Dirac semimetal Cd3As2. We show that narrowband THz pulses can be generated at oblique incidence by driving the system with optical (1.55 eV) pulses with circular polarization. Varying the incident angle also provides control of the peak emission frequency, with peak frequencies spanning 0.21-1.40 THz as the angle is tuned from 15 to 45°. We therefore present Cd3As2 nanowires as a promising novel material platform for controllable terahertz emission.
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Affiliation(s)
- Jessica L. Boland
- Photon
Science Institute, Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, U.K.
| | - Djamshid A. Damry
- Photon
Science Institute, Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, U.K.
| | - Chelsea Q. Xia
- Department
of Physics, University of Oxford, Clarendon
Laboratory, Parks Road, Oxford OX1
3PU, U.K.
| | - Piet Schönherr
- Department
of Physics, University of Oxford, Clarendon
Laboratory, Parks Road, Oxford OX1
3PU, U.K.
| | - Dharmalingam Prabhakaran
- Department
of Physics, University of Oxford, Clarendon
Laboratory, Parks Road, Oxford OX1
3PU, U.K.
| | - Laura M. Herz
- Department
of Physics, University of Oxford, Clarendon
Laboratory, Parks Road, Oxford OX1
3PU, U.K.
| | - Thorsten Hesjedal
- Department
of Physics, University of Oxford, Clarendon
Laboratory, Parks Road, Oxford OX1
3PU, U.K.
| | - Michael B. Johnston
- Department
of Physics, University of Oxford, Clarendon
Laboratory, Parks Road, Oxford OX1
3PU, U.K.
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20
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Niu C, Huang S, Ghosh N, Tan P, Wang M, Wu W, Xu X, Ye PD. Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality. NANO LETTERS 2023; 23:3599-3606. [PMID: 37057864 DOI: 10.1021/acs.nanolett.3c00780] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Chirality arises from the asymmetry of materials, where two counterparts are the mirror image of each other. The interaction between circular-polarized light and quantum materials is enhanced in chiral space groups due to the structural chirality. Tellurium (Te) possesses the simplest chiral crystal structure, with Te atoms covalently bonded into a spiral atomic chain (left- or right-handed) with a periodicity of 3. Here, we investigate the tunable circular photoelectric responses in 2D Te field-effect transistors with different chirality, including the longitudinal circular photogalvanic effect induced by the radial spin texture (electron-spin polarization parallel to the electron momentum direction) and the circular photovoltaic effect induced by the chiral crystal structure (helical Te atomic chains). Our work demonstrates the controllable manipulation of the chirality degree of freedom in materials.
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Affiliation(s)
- Chang Niu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Shouyuan Huang
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Neil Ghosh
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pukun Tan
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mingyi Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xianfan Xu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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21
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Reimann J, Sumida K, Kakoki M, Kokh KA, Tereshchenko OE, Kimura A, Güdde J, Höfer U. Ultrafast electron dynamics in a topological surface state observed in two-dimensional momentum space. Sci Rep 2023; 13:5796. [PMID: 37032349 PMCID: PMC10083179 DOI: 10.1038/s41598-023-32811-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 03/31/2023] [Indexed: 04/11/2023] Open
Abstract
We study ultrafast population dynamics in the topological surface state of Sb[Formula: see text]Te[Formula: see text] in two-dimensional momentum space with time- and angle-resolved two-photon photoemission spectroscopy. Linearly polarized mid-infrared pump pulses are used to permit a direct optical excitation across the Dirac point. We show that this resonant excitation is strongly enhanced within the Dirac cone along three of the six [Formula: see text]-[Formula: see text] directions and results in a macroscopic photocurrent when the plane of incidence is aligned along a [Formula: see text]-[Formula: see text] direction. Our experimental approach makes it possible to disentangle the decay of transiently excited population and photocurent by elastic and inelastic electron scattering within the full Dirac cone in unprecedented detail. This is utilized to show that doping of Sb[Formula: see text]Te[Formula: see text] by vanadium atoms strongly enhances inelastic electron scattering to lower energies, but only scarcely affects elastic scattering around the Dirac cone.
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Affiliation(s)
- J Reimann
- Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, 35032, Marburg, Germany
| | - K Sumida
- Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, 739-8526, Japan
- Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo, 679-5148, Japan
| | - M Kakoki
- Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, 739-8526, Japan
| | - K A Kokh
- V.S. Sobolev Institute of Geology and Mineralogy SB RAS, 630090, Novosibirsk, Russian Federation
| | - O E Tereshchenko
- Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russian Federation
| | - A Kimura
- Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, 739-8526, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (SKCM2), 1-3-2 Kagamiyama, Higashi-Hiroshima, 739-8511, Japan
| | - J Güdde
- Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, 35032, Marburg, Germany.
| | - U Höfer
- Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, 35032, Marburg, Germany
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22
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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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23
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Krishnamoorthy HNS, Dubrovkin AM, Adamo G, Soci C. Topological Insulator Metamaterials. Chem Rev 2023; 123:4416-4442. [PMID: 36943013 DOI: 10.1021/acs.chemrev.2c00594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2023]
Abstract
Confinement of electromagnetic fields at the subwavelength scale via metamaterial paradigms is an established method to engineer light-matter interaction in most common material systems, from insulators to semiconductors and from metals to superconductors. In recent years, this approach has been extended to the realm of topological materials, providing a new avenue to access nontrivial features of their electronic band structure. In this review, we survey various topological material classes from a photonics standpoint, including crystal growth and lithographic structuring methods. We discuss how exotic electronic features such as spin-selective Dirac plasmon polaritons in topological insulators or hyperbolic plasmon polaritons in Weyl semimetals may give rise to unconventional magneto-optic, nonlinear, and circular photogalvanic effects in metamaterials across the visible to infrared spectrum. Finally, we dwell on how these effects may be dynamically controlled by applying external perturbations in the form of electric and magnetic fields or ultrafast optical pulses. Through these examples and future perspectives, we argue that topological insulator, semimetal and superconductor metamaterials are unique systems to bridge the missing links between nanophotonic, electronic, and spintronic technologies.
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Affiliation(s)
- Harish N S Krishnamoorthy
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Alexander M Dubrovkin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Giorgio Adamo
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Cesare Soci
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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24
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Xue HP, Sun R, Yang X, Comstock A, Liu Y, Ge B, Liu JN, Wei YS, Yang QL, Gai XS, Gong ZZ, Xie ZK, Li N, Sun D, Zhang XQ, He W, Cheng ZH. Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low-Dimensional Topological Insulator Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208343. [PMID: 36617232 DOI: 10.1002/adma.202208343] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2022] [Revised: 12/30/2022] [Indexed: 06/17/2023]
Abstract
Dual topological insulators, simultaneously protected by time-reversal symmetry and crystalline symmetry, open great opportunities to explore different symmetry-protected metallic surface states. However, the conventional dual topological states located on different facets hinder integration into planar opto-electronic/spintronic devices. Here, dual topological superlattices (TSLs) Bi2 Se3 -(Bi2 /Bi2 Se3 )N with limited stacking layer number N are constructed. Angle-resolved photoelectron emission spectra of the TSLs identify the coexistence and adjustment of dual topological surface states on Bi2 Se3 facet. The existence and tunability of spin-polarized dual-topological bands with N on Bi2 Se3 facet result in an unconventionally weak antilocalization effect (WAL) with variable WAL coefficient α (maximum close to 3/2) from quantum transport experiments. Most importantly, it is identified that the spin-polarized surface electrons from dual topological bands exhibit circularly and linearly polarized photogalvanic effect (CPGE and LPGE). It is anticipated that the stacked dual-topology and stacking layer number controlled bands evolution provide a platform for realizing intrinsic CPGE and LPGE. The results show that the surface electronic structure of the dual TSLs is highly tunable and well-regulated for quantum transport and photoexcitation, which shed light on engineering for opto-electronic/spintronic applications.
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Affiliation(s)
- Hao-Pu Xue
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Rui Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Xu Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Andrew Comstock
- Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Yangrui Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Jia-Nan Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan-Sheng Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qing-Lin Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xue-Song Gai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zi-Zhao Gong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zong-Kai Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dali Sun
- Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Xiang-Qun Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wei He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhao-Hua Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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25
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Han J, Mao P, Chen H, Yin JX, Wang M, Chen D, Li Y, Zheng J, Zhang X, Ma D, Ma Q, Yu ZM, Zhou J, Liu CC, Wang Y, Jia S, Weng Y, Hasan MZ, Xiao W, Yao Y. Optical bulk-boundary dichotomy in a quantum spin Hall insulator. Sci Bull (Beijing) 2023:S2095-9273(23)00074-9. [PMID: 36740530 DOI: 10.1016/j.scib.2023.01.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2022] [Revised: 11/23/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023]
Abstract
The bulk-boundary correspondence is a critical concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the bulk-boundary dichotomy and distinction are rarely explored in optical experiments, which can provide unique information about topological charge carriers beyond transport and electronic spectroscopy techniques. Here, we utilize mid-infrared absorption micro-spectroscopy and pump-probe micro-spectroscopy to elucidate the bulk-boundary optical responses of Bi4Br4, a recently discovered room-temperature quantum spin Hall insulator. Benefiting from the low energy of infrared photons and the high spatial resolution, we unambiguously resolve a strong absorption from the boundary states while the bulk absorption is suppressed by its insulating gap. Moreover, the boundary absorption exhibits strong polarization anisotropy, consistent with the one-dimensional nature of the topological boundary states. Our infrared pump-probe microscopy further measures a substantially increased carrier lifetime for the boundary states, which reaches one nanosecond scale. The nanosecond lifetime is about one to two orders longer than that of most topological materials and can be attributed to the linear dispersion nature of the helical boundary states. Our findings demonstrate the optical bulk-boundary dichotomy in a topological material and provide a proof-of-principal methodology for studying topological optoelectronics.
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Affiliation(s)
- Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Pengcheng Mao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Analysis & Testing Center, Beijing Institute of Technology, Beijing 100081, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Maoyuan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Xiamen University, Xiamen 361005, China
| | - Dongyun Chen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jingchuan Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Dashuai Ma
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Chongqing University, Chongqing 400044, China
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill MA 02467, USA
| | - Zhi-Ming Yu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jinjian Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Cheng-Cheng Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yuxiang Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Wende Xiao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
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26
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Aftab S, Hegazy HH, Iqbal MZ. Recent advances in 2D TMD circular photo-galvanic effects. NANOSCALE 2023; 15:3651-3665. [PMID: 36734944 DOI: 10.1039/d2nr05337c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-power photovoltaic systems due to their unique optoelectronic properties. The 2D materials can be naturally thin, and their properties can be altered in a variety of ways. Therefore, these materials may be used to develop high-performance opto-spintronic and photovoltaic devices. The most recent and promising strategies were used to induce circular photo-galvanic effects (CPGEs) in 2D TMD materials with broken inversion symmetry. The majority of quantum devices were manufactured by mechanical exfoliation to investigate the electrical behavior of ultrathin 2D materials. The investigation of CPGEs in 2D materials could enable the exploration of spin-polarized optoelectronics to produce more energy-efficient computing systems. The current research on nanomaterial-based materials paves the way for developing materials to store, manipulate, and transmit information with better performance. Finally, this study concludes by summarizing the current challenges and prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea.
| | - Hosameldin Helmy Hegazy
- Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, P. O. Box 9004, Saudi Arabia
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Zahir Iqbal
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
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27
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Pan R, Tang X, Kan L, Li Y, Yu H, Wang K. Spin-photogalvanic effect in chiral lead halide perovskites. NANOSCALE 2023; 15:3300-3308. [PMID: 36723152 DOI: 10.1039/d2nr06919a] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-temperature solution-made chiral lead halide perovskites (LHPs) have spontaneous Bychkov-Rashba spin orbit coupling (SOC) and chiral-induced spin selectivity (CISS) qualities. Their coexistence may give rise to considerable spin and charge conversion capabilities for spin-orbitronic applications. In this study, we demonstrate the spin-photogalvanic effect for (R-MBA)2PbI4 and (S-MBA)2PbI4 polycrystalline film-based lateral devices (100 μm channel length). The light helicity dependence of the short-circuit photocurrent exhibits the circular photogalvanic effect (CPGE) and linear photogalvanic effect (LPGE) with decent two-fold symmetry for a complete cycle in a wide temperature range from 4 K to 300 K. Because of the Rashba SOC and the material helicity, the effect is converse for the two chiral LHPs. In addition, its magnitude and sign can be effectively tuned by constant magnetic fields. The Rashba effect, CISS-generated unbalanced spin transport, and chiral-induced magnetization are mutually responsible for it. Our study evidently proves the future prospect of using chiral LHPs for spin-orbitronics.
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Affiliation(s)
- Ruiheng Pan
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
| | - Xiantong Tang
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
| | - Lixuan Kan
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Yang Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Haomiao Yu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
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Gilbert SJ, Li M, Chen JS, Yi H, Lipatov A, Avila J, Sinitskii A, Asensio MC, Dowben PA, Yost AJ. Chiral photocurrent in a Quasi-1D TiS 3(001) phototransistor. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:124003. [PMID: 36689777 DOI: 10.1088/1361-648x/acb581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Accepted: 01/23/2023] [Indexed: 06/17/2023]
Abstract
The presence of in-plane chiral effects, hence spin-orbit coupling, is evident in the changes in the photocurrent produced in a TiS3(001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin-orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. Dark electronic transport measurements indicate that TiS3is n-type and has an electron mobility in the range of 1-6 cm2V-1s-1.I-Vmeasurements under laser illumination indicate the photocurrent exhibits a bias directionality dependence, reminiscent of bipolar spin diode behavior. Because the TiS3contains no heavy elements, the presence of spin-orbit coupling must be attributed to the observed loss of inversion symmetry at the TiS3(001) surface.
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Affiliation(s)
- Simeon J Gilbert
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, United States of America
| | - Mingxing Li
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - Jia-Shiang Chen
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - Hemian Yi
- Synchrotron SOLEIL and Université Paris-Saclay, L'Orme des Merisiers, BP48, 91190 Saint-Aubin, France
| | - Alexey Lipatov
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588-0304, United States of America
| | - Jose Avila
- Synchrotron SOLEIL and Université Paris-Saclay, L'Orme des Merisiers, BP48, 91190 Saint-Aubin, France
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588-0304, United States of America
| | - Maria C Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), and MATINÉE: the CSIC Research Associated between the Institute of Materiasl Sciences of the Valencia University (ICMUV) and the ICMM, Cantoblanco, E-28049 Madrid, Spain
| | - Peter A Dowben
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, United States of America
| | - Andrew J Yost
- Department of Physics, Oklahoma State University, Stillwater, OK 74078-3072, United States of America
- Oklahoma Photovoltaic Research Institute, Oklahoma State University, Stillwater, OK, United States of America
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29
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Cheng L, Xiong Y, Kang L, Gao Y, Chang Q, Chen M, Qi J, Yang H, Liu Z, Song JC, Chia EE. Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal. SCIENCE ADVANCES 2023; 9:eadd7856. [PMID: 36598995 PMCID: PMC9812375 DOI: 10.1126/sciadv.add7856] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe2. Our PtSe2 THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe2 THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.
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Affiliation(s)
- Liang Cheng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ying Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Lixing Kang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Yu Gao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Mengji Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jingbo Qi
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Justin C.W. Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Elbert E. M. Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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30
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Yang H, Schmoranzerová E, Jang P, Nath J, Guillet T, Joumard I, Auffret S, Jamet M, Němec P, Gaudin G, Miron IM. Helicity dependent photoresistance measurement vs. beam-shift thermal gradient. Nat Commun 2022; 13:6790. [PMID: 36357377 PMCID: PMC9649656 DOI: 10.1038/s41467-022-34198-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Accepted: 10/17/2022] [Indexed: 11/11/2022] Open
Abstract
Optical detection techniques are among the most powerful methods used to characterize spintronic phenomena. The spin orientation can affect the light polarization, which, by the reciprocal mechanism, can modify the spin density. Numerous recent experiments, report local changes in the spin density induced by a circularly polarized focused laser beam. These effects are typically probed electrically, by detecting the variations of the photoresistance or photocurrent associated to the reversal of the light helicity. Here we show that in general, when the light helicity is modified, the beam profile is slightly altered, and the barycenter of the laser spot is displaced. Consequently, the temperature gradients produced by the laser heating will be modulated, producing thermo-electric signals that alternate in phase with the light polarization. These unintended signals, having no connection with the electron spin, appear under the same experimental conditions and can be easily misinterpreted. We show how this contribution can be experimentally assessed and removed from the measured data. We find that even when the beam profile is optimized, this effect is large, and completely overshadows the spin related signals in all the materials and experimental conditions that we have tested. Many recent studies have explored the response of magnetic systems to circularly polarised light. To achieve this, typically experiments use a birefringent crystal. Here, Yang et al show that any small error in the alignment of the crystal can result in a beam shift, and this shift can lead to spurious signals similar yet unrelated to the electron spin.
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31
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Polarization-controlled tunable directional spin-driven photocurrents in a magnetic metamaterial with threefold rotational symmetry. Nat Commun 2022; 13:6708. [PMID: 36344506 PMCID: PMC9640558 DOI: 10.1038/s41467-022-34374-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Accepted: 10/21/2022] [Indexed: 11/09/2022] Open
Abstract
Future spintronics and quantum technologies will require a portfolio of techniques for manipulating electron spins in functional nanodevices. Especially, the establishment of the methods to control spin current is the key ingredient essential for the transfer and processing of information, enabling faster and low-energy operation. However, a universal method for manipulating spin currents with full-directional controllability and tunable magnitude has not been established. Here we show that an artificial material called a magnetic metamaterial (MM), which possesses a novel spintronic functionality not exhibited by the original substance, generates photo-driven ultrafast spin currents at room temperature via the magneto-photogalvanic effect. By tuning the polarization state of the excitation light, these spin currents can be directed with tunable magnitude along an arbitrary direction in the two-dimensional plane of the MM. This new concept may guide the design and creation of artificially engineered opto-spintronic functionalities beyond the limitations of conventional material science. By carefully structuring and patterning a material, it is possible to introduce emergent properties that would otherwise not exist. These metamaterials have allowed the development of a wide variety of new optical properties. Here, Matsubara et al present a magnetic metamaterial, where spin-currents can be directed by tuning the polarization of the incident light.
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32
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Li M, Wang Z, Han D, Shi X, Li T, Gao XP, Zhang Z. High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022]
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33
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Chen L, Zhu W, Huo P, Song J, Lezec HJ, Xu T, Agrawal A. Synthesizing ultrafast optical pulses with arbitrary spatiotemporal control. SCIENCE ADVANCES 2022; 8:eabq8314. [PMID: 36288319 PMCID: PMC9604514 DOI: 10.1126/sciadv.abq8314] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 09/08/2022] [Indexed: 05/28/2023]
Abstract
The ability to control the instantaneous state of light, from high-energy pulses down to the single-photon level, is an indispensable requirement in photonics. This has, for example, facilitated spatiotemporal probing and coherent control of ultrafast light-matter interactions, and enabled capabilities such as generation of exotic states of light with complexity, or at wavelengths, that are not easily accessible. Here, by leveraging the multifunctional control of light at the nanoscale offered by metasurfaces embedded in a Fourier transform setup, we present a versatile approach to synthesize ultrafast optical transients with arbitrary control over its complete spatiotemporal evolution. Our approach, supporting an ultrawide bandwidth with simultaneously high spectral and spatial resolution, enables ready synthesis of complex states of structured space-time wave packets. We expect our results to offer unique capabilities in coherent ultrafast light-matter interactions and facilitate applications in microscopy, communications, and nonlinear optics.
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Affiliation(s)
- Lu Chen
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- University of Maryland, College Park, MD 20742, USA
| | - Wenqi Zhu
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- University of Maryland, College Park, MD 20742, USA
| | - Pengcheng Huo
- College of Engineering and Applied Physics, Nanjing University, Nanjing 210093, China
| | - Junyeob Song
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Henri J. Lezec
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Ting Xu
- College of Engineering and Applied Physics, Nanjing University, Nanjing 210093, China
| | - Amit Agrawal
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
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34
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In C, Kim UJ, Choi H. Two-dimensional Dirac plasmon-polaritons in graphene, 3D topological insulator and hybrid systems. LIGHT, SCIENCE & APPLICATIONS 2022; 11:313. [PMID: 36302746 PMCID: PMC9613982 DOI: 10.1038/s41377-022-01012-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 08/22/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Collective oscillations of massless particles in two-dimensional (2D) Dirac materials offer an innovative route toward implementing atomically thin devices based on low-energy quasiparticle interactions. Strong confinement of near-field distribution on the 2D surface is essential to demonstrate extraordinary optoelectronic functions, providing means to shape the spectral response at the mid-infrared (IR) wavelength. Although the dynamic polarization from the linear response theory has successfully accounted for a range of experimental observations, a unified perspective was still elusive, connecting the state-of-the-art developments based on the 2D Dirac plasmon-polaritons. Here, we review recent works on graphene and three-dimensional (3D) topological insulator (TI) plasmon-polariton, where the mid-IR and terahertz (THz) radiation experiences prominent confinement into a deep-subwavelength scale in a novel optoelectronic structure. After presenting general light-matter interactions between 2D Dirac plasmon and subwavelength quasiparticle excitations, we introduce various experimental techniques to couple the plasmon-polaritons with electromagnetic radiations. Electrical and optical controls over the plasmonic excitations reveal the hybridized plasmon modes in graphene and 3D TI, demonstrating an intense near-field interaction of 2D Dirac plasmon within the highly-compressed volume. These findings can further be applied to invent optoelectronic bio-molecular sensors, atomically thin photodetectors, and laser-driven light sources.
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Affiliation(s)
- Chihun In
- Department of Physics, Freie Universität Berlin, Berlin, 14195, Germany
- Department of Physical Chemistry, Fritz-Haber-Institute of the Max-Planck-Society, Berlin, 14195, Germany
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Un Jeong Kim
- Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyunyong Choi
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea.
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35
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Kuznetsov KA, Tarasenko SA, Kovaleva PM, Kuznetsov PI, Lavrukhin DV, Goncharov YG, Ezhov AA, Ponomarev DS, Kitaeva GK. Topological Insulator Films for Terahertz Photonics. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12213779. [PMID: 36364555 PMCID: PMC9658460 DOI: 10.3390/nano12213779] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2022] [Revised: 10/14/2022] [Accepted: 10/24/2022] [Indexed: 05/15/2023]
Abstract
We discuss experimental and theoretical studies of the generation of the third terahertz (THz) frequency harmonic in thin films of Bi2Se3 and Bi2-xSbxTe3-ySey (BSTS) topological insulators (TIs) and the generation of THz radiation in photoconductive antennas based on the TI films. The experimental results, supported by the developed kinetic theory of third harmonic generation, show that the frequency conversion in TIs is highly efficient because of the linear energy spectrum of the surface carriers and fast energy dissipation. In particular, the dependence of the third harmonic field on the pump field remains cubic up to the pump fields of 100 kV/cm. The generation of THz radiation in TI-based antennas is obtained and described for the pump, with the energy of photons corresponding to the electron transitions to higher conduction bands. Our findings open up possibilities for advancing TI-based films into THz photonics as efficient THz wave generators and frequency converters.
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Affiliation(s)
- Kirill A. Kuznetsov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
- Correspondence:
| | | | - Polina M. Kovaleva
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | | | - Denis V. Lavrukhin
- Institute of Ultra High Frequency Semiconductor Electronics of RAS, 117105 Moscow, Russia
| | | | - Alexander A. Ezhov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | - Dmitry S. Ponomarev
- Institute of Ultra High Frequency Semiconductor Electronics of RAS, 117105 Moscow, Russia
- Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
| | - Galiya Kh. Kitaeva
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
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36
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Unveiling Weyl-related optical responses in semiconducting tellurium by mid-infrared circular photogalvanic effect. Nat Commun 2022; 13:5425. [PMID: 36109522 PMCID: PMC9477843 DOI: 10.1038/s41467-022-33190-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Accepted: 09/08/2022] [Indexed: 11/08/2022] Open
Abstract
AbstractElemental tellurium, conventionally recognized as a narrow bandgap semiconductor, has recently aroused research interests for exploiting Weyl physics. Chirality is a unique feature of Weyl cones and can support helicity-dependent photocurrent generation, known as circular photogalvanic effect. Here, we report circular photogalvanic effect with opposite signs at two different mid-infrared wavelengths which provides evidence of Weyl-related optical responses. These two different wavelengths correspond to two critical transitions relating to the bands of different Weyl cones and the sign of circular photogalvanic effect is determined by the chirality selection rules within certain Weyl cone and between two different Weyl cones. Further experimental evidences confirm the observed response is an intrinsic second-order process. With flexibly tunable bandgap and Fermi level, tellurium is established as an ideal semiconducting material to manipulate and explore chirality-related Weyl physics in both conduction and valence bands. These results are also directly applicable to helicity-sensitive optoelectronics devices.
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37
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Kiemle J, Powalla L, Polyudov K, Gulati L, Singh M, Holleitner AW, Burghard M, Kastl C. Gate-Tunable Helical Currents in Commensurate Topological Insulator/Graphene Heterostructures. ACS NANO 2022; 16:12338-12344. [PMID: 35968692 DOI: 10.1021/acsnano.2c03370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals heterostructures made from graphene and three-dimensional topological insulators promise very high electron mobilities, a nontrivial spin texture, and a gate-tunability of electronic properties. Such a combination of advantageous electronic characteristics can only be achieved through proximity effects in heterostructures, as graphene lacks a large enough spin-orbit interaction. In turn, the heterostructures are promising candidates for all-electrical control of proximity-induced spin phenomena. Here, we explore epitaxially grown interfaces between graphene and the lattice-matched topological insulator Bi2Te2Se. For this heterostructure, spin-orbit coupling proximity has been predicted to impart an anisotropic and electronically tunable spin texture. Polarization-resolved second-harmonic generation, Raman spectroscopy, and time-resolved magneto-optic Kerr microscopy are combined to demonstrate that the atomic interfaces align in a commensurate symmetry with characteristic interlayer vibrations. By polarization-resolved photocurrent measurements, we find a circular photogalvanic effect which is drastically enhanced at the Dirac point of the proximitized graphene. We attribute the peculiar gate-tunability to the proximity-induced interfacial spin structure, which could be exploited for, e.g., spin filters.
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Affiliation(s)
- Jonas Kiemle
- Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany
- MCQST, Schellingstrasse 4, 80799 München, Germany
| | - Lukas Powalla
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
| | - Katharina Polyudov
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
| | - Lovish Gulati
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
| | - Maanwinder Singh
- Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany
- MCQST, Schellingstrasse 4, 80799 München, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany
- MCQST, Schellingstrasse 4, 80799 München, Germany
| | - Marko Burghard
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
| | - Christoph Kastl
- Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany
- MCQST, Schellingstrasse 4, 80799 München, Germany
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38
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Liu P, Eckberg C, Pan L, Zhang P, Wang KL, Lüpke G. Ultrafast optical control of surface and bulk magnetism in magnetic topological insulator/antiferromagnet heterostructure. Sci Rep 2022; 12:12117. [PMID: 35840647 PMCID: PMC9287552 DOI: 10.1038/s41598-022-16205-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Accepted: 07/06/2022] [Indexed: 11/09/2022] Open
Abstract
Optical control of the magnetic properties in topological insulator systems is an important step in applying these materials in ultrafast optoelectronic and spintronic schemes. In this work, we report the experimental observation of photo-induced magnetization dynamics in the magnetically doped topological insulator (MTI)/antiferromagnet (AFM) heterostructure composed of Cr-(Bi,Sb)2Te3/CrSb. Through proximity coupling to the AFM layer, the MTI displays a dramatically enhanced magnetism, with robust perpendicular magnetic anisotropy. When subjected to intense laser irradiation, both surface and bulk magnetism of the MTI are weakened by laser-induced heating of the lattice, however, at the surface, the deleterious heat effect is compensated by the strengthening of Dirac-hole-mediated exchange coupling as demonstrated by an unconventional pump-fluence-dependent exchange-bias effect. Through theoretical analyses, the sizes of exchange coupling energies are estimated in the MTI/AFM bilayer structure. The fundamentally different mechanisms supporting the surface and bulk magnetic order in MTIs allow a novel and distinctive photo-induced transient magnetic state with antiparallel spin configuration, which broadens the understanding of the magnetization dynamics of MTIs under ultrashort and intense optical excitation.
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Affiliation(s)
- Peiwen Liu
- Department of Applied Science, The College of William and Mary, Williamsburg, VA, 23187, USA
| | - Chris Eckberg
- Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.,Fibertek Inc, Herndon, VA, 20171, USA.,DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA.,DEVCOM Army Research Laboratory, Playa Vista, CA, 90094, USA
| | - Lei Pan
- Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Peng Zhang
- Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Kang L Wang
- Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Gunter Lüpke
- Department of Applied Science, The College of William and Mary, Williamsburg, VA, 23187, USA.
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39
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Maklar J, Stühler R, Dendzik M, Pincelli T, Dong S, Beaulieu S, Neef A, Li G, Wolf M, Ernstorfer R, Claessen R, Rettig L. Ultrafast Momentum-Resolved Hot Electron Dynamics in the Two-Dimensional Topological Insulator Bismuthene. NANO LETTERS 2022; 22:5420-5426. [PMID: 35709372 PMCID: PMC9284614 DOI: 10.1021/acs.nanolett.2c01462] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical properties. Here, we report on the electron dynamics of the novel room-temperature QSH candidate bismuthene after photoexcitation using time- and angle-resolved photoemission spectroscopy. We map the transiently occupied conduction band and track the full relaxation pathway of hot photocarriers. Intriguingly, we observe photocarrier lifetimes much shorter than those in conventional semiconductors. This is ascribed to the presence of topological in-gap states already established by local probes. Indeed, we find spectral signatures consistent with these earlier findings. Demonstration of the large band gap and the view into photoelectron dynamics mark a critical step toward optical control of QSH functionalities.
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Affiliation(s)
- Julian Maklar
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Raúl Stühler
- Physikalisches
Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, University of Würzburg, D-97070 Würzburg, Germany
| | - Maciej Dendzik
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Tommaso Pincelli
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Shuo Dong
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Samuel Beaulieu
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Alexander Neef
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Gang Li
- School
of Physical Science and Technology, ShanghaiTech
University, Shanghai 200031, China
| | - Martin Wolf
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Ralph Ernstorfer
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
- Institut
für Optik und Atomare Physik, Technische
Universität Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany
| | - Ralph Claessen
- Physikalisches
Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, University of Würzburg, D-97070 Würzburg, Germany
| | - Laurenz Rettig
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
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40
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Optical manipulation of Rashba-split 2-dimensional electron gas. Nat Commun 2022; 13:3096. [PMID: 35654938 PMCID: PMC9163084 DOI: 10.1038/s41467-022-30742-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Accepted: 05/16/2022] [Indexed: 11/17/2022] Open
Abstract
In spintronics, the two main approaches to actively control the electrons’ spin involve static magnetic or electric fields. An alternative avenue relies on the use of optical fields to generate spin currents, which can bolster spin-device performance, allowing for faster and more efficient logic. To date, research has mainly focused on the optical injection of spin currents through the photogalvanic effect, and little is known about the direct optical control of the intrinsic spin-splitting. To explore the optical manipulation of a material’s spin properties, we consider the Rashba effect. Using time- and angle-resolved photoemission spectroscopy (TR-ARPES), we demonstrate that an optical excitation can tune the Rashba-induced spin splitting of a two-dimensional electron gas at the surface of Bi2Se3. We establish that light-induced photovoltage and charge carrier redistribution - which in concert modulate the Rashba spin-orbit coupling strength on a sub-picosecond timescale - can offer an unprecedented platform for achieving optically-driven spin logic devices. The major challenge for the development of spin based information processing is to obtain efficient ways of controlling spin. Here, Michiardi et al show that the Rashba spin-splitting at the surface of Bi2Se3 topological insulator can be controlled via optical pulses on picosecond timescales.
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41
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Wang S, Zhang H, Zhang J, Li S, Luo D, Wang J, Jin K, Sun J. Circular Photogalvanic Effect in Oxide Two-Dimensional Electron Gases. PHYSICAL REVIEW LETTERS 2022; 128:187401. [PMID: 35594114 DOI: 10.1103/physrevlett.128.187401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 11/24/2021] [Accepted: 03/28/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional electron gases (2DEGs) at the LaAlO_{3}/SrTiO_{3} interface have attracted wide interest, and some exotic phenomena are observed, including 2D superconductivity, 2D magnetism, and diverse effects associated with Rashba spin-orbit coupling. Despite the intensive investigations, however, there are still hidden aspects that remain unexplored. For the first time, here we report on the circular photogalvanic effect (CPGE) for the oxide 2DEG. Spin polarized electrons are selectively excited by circular polarized light from the in-gap states of SrTiO_{3} to 2DEG and are converted into electric current via the mechanism of spin-momentum locking arising from Rashba spin-orbit coupling. Moreover, the CPGE can be effectively modified by the density and distribution of oxygen vacancies. This Letter presents an effective approach to generate and manipulate the spin polarized current, paving the way toward oxide spintronics.
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Affiliation(s)
- Shuanhu Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Shuqin Li
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Dianbing Luo
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Jianyuan Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Spintronics Institute, University of Jinan, Jinan, Shandong 250022, China
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42
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Cai J, Zhang W, Xu L, Hao C, Ma W, Sun M, Wu X, Qin X, Colombari FM, de Moura AF, Xu J, Silva MC, Carneiro-Neto EB, Gomes WR, Vallée RAL, Pereira EC, Liu X, Xu C, Klajn R, Kotov NA, Kuang H. Polarization-sensitive optoionic membranes from chiral plasmonic nanoparticles. NATURE NANOTECHNOLOGY 2022; 17:408-416. [PMID: 35288671 DOI: 10.1038/s41565-022-01079-3] [Citation(s) in RCA: 59] [Impact Index Per Article: 29.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2021] [Accepted: 01/13/2022] [Indexed: 05/21/2023]
Abstract
Optoelectronic effects differentiating absorption of right and left circularly polarized photons in thin films of chiral materials are typically prohibitively small for their direct photocurrent observation. Chiral metasurfaces increase the electronic sensitivity to circular polarization, but their out-of-plane architecture entails manufacturing and performance trade-offs. Here, we show that nanoporous thin films of chiral nanoparticles enable high sensitivity to circular polarization due to light-induced polarization-dependent ion accumulation at nanoparticle interfaces. Self-assembled multilayers of gold nanoparticles modified with L-phenylalanine generate a photocurrent under right-handed circularly polarized light as high as 2.41 times higher than under left-handed circularly polarized light. The strong plasmonic coupling between the multiple nanoparticles producing planar chiroplasmonic modes facilitates the ejection of electrons, whose entrapment at the membrane-electrolyte interface is promoted by a thick layer of enantiopure phenylalanine. Demonstrated detection of light ellipticity with equal sensitivity at all incident angles mimics phenomenological aspects of polarization vision in marine animals. The simplicity of self-assembly and sensitivity of polarization detection found in optoionic membranes opens the door to a family of miniaturized fluidic devices for chiral photonics.
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Affiliation(s)
- Jiarong Cai
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China
| | - Wei Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing, China
- Beijing Computational Science Research Centre, Beijing, China
| | - Liguang Xu
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China
- The Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, China
| | - Changlong Hao
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China
| | - Wei Ma
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China
| | - Maozhong Sun
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China
| | - Xiaoling Wu
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China
| | - Xian Qin
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Felippe Mariano Colombari
- Brazilian Biorenewables National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, Brazil
| | | | - Jiahui Xu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | | | | | | | | | | | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Chuanlai Xu
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China.
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China.
- The Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, China.
| | - Rafal Klajn
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel.
| | - Nicholas A Kotov
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI, USA.
- Biointerfaces Institute, University of Michigan, Ann Arbor, MI, USA.
- Michigan Institute for Translational Nanotechnology, Ypsilanti, MI, USA.
| | - Hua Kuang
- State Key Laboratory of Food Science and Technology, Jiangnan University, Wuxi, China.
- International Joint Research Laboratory for Biointerface and Biodetection, School of Food Science and Technology, Jiangnan University, Wuxi, China.
- The Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, China.
- Science Center for Future Foods, Jiangnan University, Wuxi, China.
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43
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Abstract
Optically excited systems can host unprecedented phenomena and reveal key information. The spin-channel physics in the photoexcited dynamics of quantum matter remains largely unexplored. This study finds the topological surface state under contemporary time-resolved pump-probe spectroscopy an exceptionally capable platform in this regard. Spin signals exhibit interesting tornado-like spiral patterns, and the unusual topological optical activity can be indicative of spintronic applications. This exemplifies a purely nonequilibrium topological winding phenomenon, where all the hidden helicity factors in the light–matter-coupled system are robustly encoded. These results open a direction of nonequilibrium topological spin states in quantum materials. Nonequilibrium quantum dynamics of many-body systems is the frontier of condensed matter physics; recent advances in various time-resolved spectroscopic techniques continue to reveal rich phenomena. Angle-resolved photoemission spectroscopy (ARPES) as one powerful technique can resolve electronic energy, momentum, and spin along the time axis after excitation. However, dynamics of spin textures in momentum space remains mostly unexplored. Here, we demonstrate theoretically that the photoexcited surface state of genuine or magnetically doped topological insulators shows intriguing topological spin textures (i.e., tornado-like patterns) in the spin-resolved ARPES. We systematically reveal its origin as a unique nonequilibrium photoinduced topological winding phenomenon. As all intrinsic and extrinsic topological helicity factors of both material and light are embedded in a robust and delicate manner, the tornado patterns not only allow a remarkable tomography of such important system information, but also enable various unique dichroic topological switchings of the momentum-space spin texture. These results open a direction of nonequilibrium topological spin states in quantum materials.
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44
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Zhang R, Wei Y, Kang Y, Pu M, Li X, Ma X, Xu M, Luo X. Breaking the Cut-Off Wavelength Limit of GaTe through Self-Driven Oxygen Intercalation in Air. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103429. [PMID: 34970845 PMCID: PMC8948563 DOI: 10.1002/advs.202103429] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 10/30/2021] [Indexed: 05/20/2023]
Abstract
Low symmetric two dimensional (2D) semiconductors are of great significance for their potential applications in polarization-sensitive photodetection and quantum information devices. However, their real applications are limited by their photo-detecting wavelength ranges, which are restricted by their fundamental optical bandgaps. Recently, intercalation has been demonstrated to be a powerful strategy to modulate the optical bandgaps of 2D semiconductors. Here, the authors report the self-driven oxygen (O2 ) intercalation induced bandgap reduction from 1.75 to 1.19 eV in gallium telluride (GaTe) in air. This bandgap shrinkage provides the long-wavelength detection threshold above ≈1100 nm for O2 intercalated GaTe (referred to as GaTeO2 ), well beyond the cut-off wavelength at ≈708 nm for pristine GaTe. The GaTeO2 photodetectors have a high photoresponsivity, and highly anisotropic photodetection behavior to even sub-waveband radiation. The dichroic ratio (Imax /Imin ) of photocurrent is about 1.39 and 2.9 for 600 nm and 1100 nm, respectively. This findings demonstrates a broadband photodetector utilizing GaTe after breaking through its bandgap limitation by self-driven O2 intercalation in air and further reveal its photoconductivity anisotropic nature. This provides design strategies of 2D materials-based high-performance broadband photodetectors for the exploration of polarized state information.
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Affiliation(s)
- Renyan Zhang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha410073China
| | - Yuehua Wei
- College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha410073China
| | - Yan Kang
- College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha410073China
- Beijing Institute for Advanced StudyNational University of Defense TechnologyChangsha410073China
| | - Mingbo Pu
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Xiong Li
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Xiaoliang Ma
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Mingfeng Xu
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Xiangang Luo
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
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45
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He Y, Chen Y, Lu C, Zhang Y, Tian Z, Xu X, Dai J. Coherent injection photocurrent in bismuth sulfide film induced by one-plus-two photon absorption quantum interference. OPTICS LETTERS 2022; 47:1206-1209. [PMID: 35230328 DOI: 10.1364/ol.445990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 01/19/2022] [Indexed: 06/14/2023]
Abstract
Quantum interference (QuI) effect is a powerful method to generate and control the ultrafast photocurrent in semiconductors. We utilize two-color pulsed light excitation in bismuth sulfide (Bi2S3) film to induce the photocurrent through the QuI effect. Experimentally, the photocurrent is indirectly monitored using a standard terahertz (THz) time-domain spectroscopic system. Due to the QuI, an asymmetric photon injection occurs in Bi2S3 film, resulting in coherent injection current and subsequently THz wave generation. Our results on the pump pulse energy dependence of the THz electric field suggests that the THz wave generation process follows the third-order nonlinear optical process.
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46
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Roy S, Manna S, Mitra C, Pal B. Photothermal Control of Helicity-Dependent Current in Epitaxial Sb 2Te 2Se Topological Insulator Thin-Films at Ambient Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9909-9916. [PMID: 35156377 DOI: 10.1021/acsami.1c24461] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Optical control of helicity-dependent photocurrent in topological insulator (TI) Sb2Te2Se has been studied at room temperature on epitaxial thin-films grown by pulsed laser deposition (PLD). Comparison with a theoretical model, which fits the data very well, reveals different contributions to the measured photocurrent. Study of the dependence of photocurrent on the angle of incidence (wave-vector) of the excitation light with respect to the sample normal helps to identify the origin of different components of the photocurrent. Enhancement and inversion of the photocurrent in the presence of the photothermal gradient for light incident on two opposite edges of the sample occur due to selective spin-state excitation with two opposite circularly polarized lights in the presence of the unique spin-momentum locked surface states. These observations render the PLD-grown epitaxial TI thin-films promising for optoelectronic devices such as sensors, switches, and actuators whose response can be controlled by polarization as well as the angle of incidence of light under ambient conditions. The polarization response can also be tuned by the photothermal effect by suitably positioning the incident light beam on the device.
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Affiliation(s)
- Samrat Roy
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
| | - Subhadip Manna
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
| | - Chiranjib Mitra
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
| | - Bipul Pal
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal 741246, India
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47
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Liang G, Zhai G, Ma J, Wang H, Zhao J, Wu X, Zhang X. Strain-induced circular photogalvanic current in Dirac semimetal Cd 3As 2 films epitaxied on a GaAs(111)B substrate. NANOSCALE 2022; 14:2383-2392. [PMID: 35088779 DOI: 10.1039/d1nr05812f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum phenomena and high-speed optoelectronic applications. The circular photogalvanic effect (CPGE) current, resulting from the optically-excited spin orientation transport, was theoretically predicted to vanish in an ideal Dirac system due to the symmetric photoexcitation about the Dirac point. Here, we reported the observation of the CPGE photocurrent in epitaxial Cd3As2 thin films grown on a GaAs(111)B substrate. The signature of the CPGE is confirmed by its sign reversal upon switching the helicity of optical radiation, as well as its dependence on the excitation incident angle and power. By comparison of the CPGE response between the films with different thicknesses, it is suggested that the observed CPGE results from the reduced structure symmetry and substantially modified electronic band structure of the Cd3As2 thin film that undergoes large epitaxial strain. Our experimental findings provide a valuable reference for the band engineering and exotic helicity-dependent photocurrent phenomena in DSMs towards their potential opto-spintronic device applications.
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Affiliation(s)
- Gaoming Liang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Guihao Zhai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jialin Ma
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xiaoguang Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xinhui Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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48
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Ma Q, Grushin AG, Burch KS. Topology and geometry under the nonlinear electromagnetic spotlight. NATURE MATERIALS 2021; 20:1601-1614. [PMID: 34127824 DOI: 10.1038/s41563-021-00992-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 03/19/2021] [Indexed: 06/12/2023]
Abstract
For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.
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Affiliation(s)
- Qiong Ma
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Adolfo G Grushin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
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49
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Nonlinear nanoelectrodynamics of a Weyl metal. Proc Natl Acad Sci U S A 2021; 118:2116366118. [PMID: 34819380 DOI: 10.1073/pnas.2116366118] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 10/25/2021] [Indexed: 11/18/2022] Open
Abstract
Chiral Weyl fermions with linear energy-momentum dispersion in the bulk accompanied by Fermi-arc states on the surfaces prompt a host of enticing optical effects. While new Weyl semimetal materials keep emerging, the available optical probes are limited. In particular, isolating bulk and surface electrodynamics in Weyl conductors remains a challenge. We devised an approach to the problem based on near-field photocurrent imaging at the nanoscale and applied this technique to a prototypical Weyl semimetal TaIrTe4 As a first step, we visualized nano-photocurrent patterns in real space and demonstrated their connection to bulk nonlinear conductivity tensors through extensive modeling augmented with density functional theory calculations. Notably, our nanoscale probe gives access to not only the in-plane but also the out-of-plane electric fields so that it is feasible to interrogate all allowed nonlinear tensors including those that remained dormant in conventional far-field optics. Surface- and bulk-related nonlinear contributions are distinguished through their "symmetry fingerprints" in the photocurrent maps. Robust photocurrents also appear at mirror-symmetry breaking edges of TaIrTe4 single crystals that we assign to nonlinear conductivity tensors forbidden in the bulk. Nano-photocurrent spectroscopy at the boundary reveals a strong resonance structure absent in the interior of the sample, providing evidence for elusive surface states.
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50
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Abstract
2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.
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Affiliation(s)
- Fakun K. Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Sijie J. Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Y. Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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