Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2

Ugeda M. Atomic-Scale Mapping of Superconductivity in the Incoherent CDW Mosaic Phase of a Transition Metal Dichalcogenide

The emergence of superconductivity in the octahedrally coordinated (1T) phase of TaS2 is preceded by the loss of long-range order in the charge density wave (CDW). Such decoherence triggers the formation of nm-sized coherent CDW domains bound by a domain wall network, known as the mosaic phase, and proposed as the spatial origin of superconductivity. Here, we report the atomic-scale characterization of superconductivity in 1T-TaSSe, a model 1T compound exhibiting the CDW mosaic phase, using high-resolution scanning tunneling spectroscopy and Andreev spectroscopy. Spatially resolved conductance maps at the onset of superconductivity reveal that the density of states at the Fermi level is mostly localized on the CDW domains rather than at the domain walls, suggesting their dominant role in the formation of superconductivity. This scenario is confirmed at 340 mK, where superconductivity is fully developed, and the subtle spatial inhomogeneity of superconductivity remains unlinked to the domain wall network.

The Critical Role of Interlayer Charge Transfer and Charge Redistribution Inducing the Formation of Phase-Pure Monolayer 1T'-MoTe2

1T'-MoTe2 exhibits a variety of intriguing physical properties, consisting of nontrivial higher-order topological behavior, ferroelectricity, superconductivity, and reversible phase transition. Hence, 1T'-MoTe2 has emerged as a hot spot in the fields of condensed matter physics and materials science. Nevertheless, the large-area synthesis of phase-pure 1T'-MoTe2 thin films has always been a big challenge for their widespread studies and device applications. In this study, three types of 1T'-MoTe2/XTe heterojunction films are proposed and fabricated by molecular beam epitaxy. The mechanisms of lattice strain and charge transfer influencing the 2H-1T' phase transition are clearly elucidated, while centimeter-size and phase-pure monolayer 1T'-MoTe2 can be successfully fabricated via the choice of XTe functional layers. The results reveal that the substantial charge transfer of 0.005-0.056 e/f.u. at the heterojunction interface and the particular electron accumulation in Mo 4d orbitals (0.010-0.016 e/f.u.) are critical for the formation of 1T'-MoTe2, while, in contrast, the effect from lattice strain that is induced by the underlying XTe layer is negligible. Owing to the most remarkable charge transfer effects, phase-pure monolayer 1T'-MoTe2 is achieved in the 1T'-MoTe2/MnTe heterojunction film among all films. This study lays a solid foundation for the in-depth studies of the important physical properties and functional devices based on 1T'-MoTe2 films and provides valuable suggestions for effective phase control in similar materials utilizing heterojunction engineering.

Spin-valley coupling enhanced high-TC ferromagnetism in a non-van der Waals monolayer Cr2Se3 on graphene

Spin-valley magnetic ordering is restricted to layered van der Waals type transition-metal dichalcogenides with ordering temperatures below 55 K. Recent theoretical studies on non-van der Waals structures have predicted spin-valley polarization induced semiconducting ferromagnetic ground states, but experimental validation is missing. We report high-Curie temperature (TC ~ 225 K) metallic ferromagnetism with spontaneous spin-valley polarization in monolayer Cr2Se3 on graphene. Angle-resolved photoemission spectroscopy (ARPES) reveals systematic temperature-dependent energy shifts and splitting of localized Cr 3 d↑-t2g bands, accompanied by occupancy of the itinerant Cr 3d-eg valleys. The t2g-eg spin-valley coupling at the K/K' points of hexagonal Brillouin zone leads to ferromagnetic ordering. Circular dichroism in ARPES shows clear evidence of spin-valley polarized states. Comparison with bilayer and trilayer Cr2Se3 reveals the crucial role of valley carrier density in enhancing TC and provides a guiding principle to realize 2D ferromagnetism at higher temperatures in non-van der Waals materials.

Temperature Effects on the Electronic Structures of Epitaxial 1T'-WSe2 Monolayers

Transition metal dichalcogenides (TMDCs) with a 1T' structural phase are predicted to be two-dimensional topological insulators at zero temperature. Although the quantized edge conductance of 1T'-WTe2 has been confirmed to survive up to 100 K (Wu, S.; Fatemi, V.; Gibson, Q. D.; Watanabe, K.; Taniguchi, T.; Cava, R. J.; Jarillo-Herrero, P., Science 2018, 359, 76-79), this temperature is still relatively low for industrial applications. Addressing the limited studies on temperature effects of 1T'-TMDCs, our research focuses on the crystal and electronic properties of epitaxial 1T'-WSe2 monolayers grown on bilayer graphene (BLG) and SrTiO3(100) substrates at various temperatures. For the 1T'-WSe2 grown on BLG (1T'-WSe2/BLG), we observed a significant thermal expansion effect on its band structures with a thermal expansion coefficient of ∼60 × 10-6 K-1. In contrast, 1T'-WSe2 grown on SrTiO3(100) (1T'-WSe2/SrTiO3) exhibits minimal changes with varied temperatures due to the enhanced stress exerted by the substrate. In addition, a significant Coulomb gap (CG) was observed to be pinned at the Fermi level for both 1T'-WSe2/BLG and 1T'-WSe2/SrTiO3 in the angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). The CGs show different sizes depending on the different dielectric environments and interfacial doping from the substrates. The CG was also found to decrease with increasing temperatures and can persist up to 200 K for 1T'-WSe2/BLG, consistent with our Monte Carlo simulations. The observation of CG at Fermi level endows the epitaxial 1T'-WSe2 monolayers with a huge potential for realizing quantum spin Hall devices at high temperature and the topological computing designations in the future.

Topological Exciton Density Wave in Monolayer WSe_{2}

Based on the first-principles calculations coupled with the Bethe-Salpeter equation, the topological exciton density wave is investigated in two-dimensional monolayer WSe_{2}. We find that the topological excitonic insulator phase can exist in monolayer WSe_{2}, and it is robust against in-plane strain. In this system, the energy minimum of exciton bands is shifted to a finite in-plane momentum, forming a Fulde-Ferrell-Larkin-Ovchinnikov-like state. Using the Gross-Pitaevskii equations, stripe-patterned exciton density waves with a nonzero velocity emerge in monolayer WSe_{2}. Our findings pave a new way for exploring the interplay between electron correlation and nontrivial topology.

Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure

Introducing uniform magnetic order in two-dimensional (2D) topological insulators by constructing heterostructures of TI and magnet is a promising way to realize the high-temperature Quantum Anomalous Hall effect. However, the topological properties of 2D materials are susceptible to several factors that make them difficult to maintain, and whether topological interface states (TISs) can exist at magnetic-topological heterostructure interfaces is largely unknown. Here, it is experimentally shown that TISs in a lateral heterostructure of CrTe2/Bi(110) are robust against disorder, defects, high magnetic fields (time-reversal symmetry-breaking perturbations), and elevated temperature (77 K). The lateral heterostructure is realized by lateral epitaxial growth of bilayer (BL) Bi to monolayer CrTe2 grown on graphite. Scanning Tunneling Microscopy and non-contact Atomic Force Microscopy demonstrate a black phosphorus-like structure with low atomic buckling (less than 0.1 Å) of the BL Bi(110), indicating the presence of its topological properties. Scanning tunneling spectroscopy and energy-dependent dI/dV mapping further confirm the existence of topologically induced one-dimensional in-gap states localized at the interface. These results demonstrate the robustness of TISs in lateral magnetic-topological heterostructures, which is competitive with those in vertically stacked magnetic-topological heterostructures and provides a promising route for constructing planar high-density non-dissipative devices using TISs.

Tunable Quantum Confinement in Individual Nanoscale Quantum Dots via Interfacial Engineering

Introducing quantum confinement has shown promise to enable control of charge carriers. Although recent advances make it possible to realize confinement from semiclassical regime to quantum regime, achieving control of electronic potentials in individual nanoscale quantum dots (QDs) has remained challenging. Here, we demonstrate the ability to tune quantum confined states in individual nanoscale graphene QDs, which are realized by inserting nanoscale monolayer WSe2 islands in graphene/WSe2 heterostructures via interfacial engineering. Our experiment indicates that scanning tunneling microscope (STM) tip pulses can trigger a local phase transition in the interfacial nanoscale WSe2 islands, which, in turn, enables us to tune discrete quantum states in individual graphene QDs. By using a STM tip, we can also generate one-dimensional (1D) position-tunable domain boundaries in the WSe2 islands. The 1D boundary introduces atomically wide electrostatic barriers that bifurcate quasibound states into two regions in the graphene QD, changing the QD from a relativistic artificial atom to a relativistic artificial molecule.

Concentration-Dependent Layer-Stacking and the Influence on Phase-Conversion in Colloidally Synthesized WSe2 Nanocrystals

We report a synthesis of WSe2 nanocrystals in which the number of layers is controlled by varying the precursor concentration. By altering the ratios and concentrations of W(CO)6 and Ph2Se2 in trioctylphosphine oxide, we show that high [Se] and large Se/W ratios lead to an increased number of layers per nanocrystal. As the number of layers per nanocrystal is increased, the nanocrystal ensembles show less phase-conversion from the metastable 2M phase to the thermodynamically favored 2H phase. Density functional theory calculations indicate that the interlayer binding energy increases with the number of layers, indicating that the stronger interlayer interactions in multilayered nanocrystals may increase the energy barrier to phase-conversion. The results presented herein provide insights for directing phase-conversion in solution-phase syntheses of transition metal dichalcogenides.

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs for logic computing remains challenging. Here, by using density functional theory combined with the nonequilibrium Green's function method, we design a 5 nm split-gate FET based on a monolayer WSe2 homojunction, which can implement dynamic polarity control in different gate configurations. The series array of two FETs shows a functional family of logic gates (NOR, AND, XOR, A̅B, and AB̅), and the semi-adder designed by the logic functions AND and XOR reduces the number of transistors by 66.7%. The parallel array of two FETs demonstrates reconfigurable logic gates with NAND/OR/A̅+B/A+B̅ quadruple functions, which can realize the decoding function of 00-11 in the decoder. The cascade design of the electrically tunable FETs helps to tackle the logic device downscaling and integration dilemmas.

Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice

Coupling the spin Hall effect with novel degrees of freedom of electrons is central to the rich phenomena observed in condensed-matter physics. Here, using symmetry analysis and a low-energy k·p model, we report the sliding ferroelectricity engineered coupling between spin Hall effect and emerging layertronics, thereby generating the layer spin Hall effect (LSHE), in a 2D lattice. The physics is rooted in a pair of T-symmetry connected valleys, which experience spin splitting accompanied by large Berry curvature under spin-orbit coupling. The interaction between the out-of-plane ferroelectricity and electronic properties gives rise to the layer-locked Berry curvature and thus layer-polarized spin Hall effect (LP-SHE) in the bilayers. Such LP-SHE is strongly coupled with sliding ferroelectricity, enabling it to be ferroelectrically reversible. Using first-principles calculations, the mechanism is further demonstrated in a series of real bilayer systems, including MoS2, MoTe2, WSe2, MoSi2P4, and MoSi2As4. These phenomena and insights open a new direction for spin Hall effect.

A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Point defects in two-dimensional materials are of key interest for quantum information science. However, the parameter space of possible defects is immense, making the identification of high-performance quantum defects very challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS2, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (CoS 0 ) and fabricate it with scanning tunneling microscopy (STM). The CoS 0 electronic structure measured by STM agrees with first principles and showcases an attractive quantum defect. Our work shows how HT computational screening and nanoscale synthesis routes can be combined to design promising quantum defects.

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1 T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.

A hybrid topological quantum state in an elemental solid

Topology1-3 and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three important research directions: (1) the competition between distinct interactions, as in several intertwined phases, (2) the interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and (3) the coalescence of several topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, although the last example remains mostly unexplored, mainly because of the lack of a material platform for experimental studies. Here, using tunnelling microscopy, photoemission spectroscopy and a theoretical analysis, we unveil a 'hybrid' topological phase of matter in the simple elemental-solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology that stabilizes a hybrid topological phase. Although momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topologically induced step-edge conduction channels revealed on various natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step-edge states in arsenic relies on the simultaneous presence of both a non-trivial strong Z2 invariant and a non-trivial higher-order topological invariant, which provide experimental evidence for hybrid topology. Our study highlights pathways for exploring the interplay of different band topologies and harnessing the associated topological conduction channels in engineered quantum or nano-devices.

Phase transition in WSe2-xTex monolayers driven by charge injection and pressure: a first-principles study

Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.

Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization

The confinement of electrons in one-dimensional (1D) space highlights the prominence of the role of electron interactions or correlations, leading to a variety of fascinating physical phenomena. The quasi-1D electron states can exhibit a unique spin texture under spin-orbit interaction (SOI) and thus could generate a robust spin current by forbidden electron backscattering. Direct detection of such 1D spin or SOI information, however, is challenging due to complicated techniques. Here, we identify an anomalous planar Hall effect (APHE) in the magnetotransport of quasi-1D van der Waals (vdW) topological materials as exemplified by Bi4Br4, which arises from the quantum interference correction of 1D weak antilocalization (WAL) to the ordinary planar Hall effect and demonstrates a deviation from the usual sine and cosine curves. The occurrence of 1D WAL is correlated to the line-shape Fermi surface and persistent spin texture of (100) topological surface states of Bi4Br4, as revealed by both our angle-resolved photoemission spectroscopy and first-principles calculations. By generalizing the observation of APHE to other non-vdW bulk materials, this work provides a possible characteristic of magnetotransport for identifying the spin/SOI information and quantum interference behavior of 1D states in 3D topological material.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

Room-Temperature Ferromagnetism in Epitaxial Bilayer FeSb/SrTiO3(001) Terminated with a Kagome Lattice

Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single- or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth of 2D non-van der Waals ferromagnetic bilayer FeSb on SrTiO3(001) substrates stabilized by strong coupling to the substrate, which exhibits in-plane magnetic anisotropy and a Curie temperature above 390 K. In situ low-temperature scanning tunneling microscopy/spectroscopy and density-functional theory calculations further reveal that an Fe Kagome layer terminates the bilayer FeSb. Our results open a new avenue for further exploring emergent quantum phenomena from the interplay of ferromagnetism and topology for application in spintronics.

Controlling Morphology and Excitonic Disorder in Monolayer WSe2 Grown by Salt-Assisted CVD Methods

Chemical synthesis is a compelling alternative to top-down fabrication for controlling the size, shape, and composition of two-dimensional (2D) crystals. Precision tuning of the 2D crystal structure has broad implications for the discovery of new phenomena and the reliable implementation of these materials in optoelectronic, photovoltaic, and quantum devices. However, precise and predictable manipulation of the edge structure in 2D crystals through gas-phase synthesis is still a formidable challenge. Here, we demonstrate a salt-assisted low-pressure chemical vapor deposition method that enables tuning W metal flux during growth of 2D WSe2 monolayers and, thereby, direct control of their edge structure and optical properties. The degree of structural disorder in 2D WSe2 is a direct function of the W metal flux, which is controlled by adjusting the mass ratio of WO3 to NaCl. This edge disorder then couples to excitonic disorder, which manifests as broadened and spatially varying emission profiles. Our work links synthetic parameters with analyses of material morphology and optical properties to provide a unified understanding of intrinsic limits and opportunities in synthetic 2D materials.

Classification and Simulation of Structural Phase Transformation-Induced Interfacial Defects in Group VI Transition-Metal Dichalcogenide Monolayers

Polymorphic 2D materials have recently emerged as promising candidates for use in nanoelectronic devices by way of their ability to undergo structural phase transformations induced by external fields. Under cyclic transformations, however, induced interfacial defects may proliferate and compromise the system properties. Herein, we first employ geometric analysis to classify such defects generated during the 2H ↔ 1T and 2H ↔ 1T' transformations in group VI transition-metal dichalcogenide monolayers. Then, simulations of a mesoscale model with atomistic spatial resolution are conducted to assess the proliferation of such defects during cyclic 2H ↔ 1T transformations. It is shown that defect densities reach a steady state, with the 2H phase remaining more pristine than the 1T and 1T' states. We expect that the effects of these defects on the device performance are application-dependent and will require further inquiry.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Polaritonic Probe of an Emergent 2D Dipole Interface

The use of work-function-mediated charge transfer has recently emerged as a reliable route toward nanoscale electrostatic control of individual atomic layers. Using α-RuCl3 as a 2D electron acceptor, we are able to induce emergent nano-optical behavior in hexagonal boron nitride (hBN) that arises due to interlayer charge polarization. Using scattering-type scanning near-field optical microscopy (s-SNOM), we find that a thin layer of α-RuCl3 adjacent to an hBN slab reduces the propagation length of hBN phonon polaritons (PhPs) in significant excess of what can be attributed to intrinsic optical losses. Concomitant nano-optical spectroscopy experiments reveal a novel resonance that aligns energetically with the region of excess PhP losses. These experimental observations are elucidated by first-principles density-functional theory and near-field model calculations, which show that the formation of a large interfacial dipole suppresses out-of-plane PhP propagation. Our results demonstrate the potential utility of charge-transfer heterostructures for tailoring optoelectronic properties of 2D insulators.

Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy

Grain boundaries (GBs) are one- or two-dimensional (2D) defects, which are universal in crystals and play a crucial role in determining their mechanical, electrical, optical, and thermoelectric properties. In general, GBs tend to decrease electrical or thermal conductivity, and consequently degrade the performance of devices. However, the unusual characteristics of GBs have led to the production of a new class of memristors with 2D semiconducting transition metal dichalcogenides (TMDs) and the creation of conducting channels in 2D topological insulators. Therefore, understanding the nature of GBs and their influence on device applications emphasizes the importance of GB engineering for future 2D TMD-based devices. This review discusses recent progress made in the investigation of various roles of GBs in 2D TMDs characterized via scanning tunneling microscopy/spectroscopy.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Tuning the 1T'/2H phases in WxMo1-xSe2 nanosheets

Controlling materials' morphology, crystal phase and chemical composition at the atomic scale has become central in materials research. Wet chemistry approaches have great potential in directing the material crystallisation process to achieve tuneable chemical compositions as well as to target specific crystal phases. Herein, we report the compositional and crystal phase tuneability achieved in the quasi-binary W_xMo_1-xSe₂ system with chemical and crystal phase mixing down to the atomic level. A series of W_xMo_1-xSe₂ solid solutions in the form of nanoflowers with atomically thin petals were obtained via a direct colloidal reaction by systematically varying the ratios of transition metal precursors. We investigate the effect of selenium precursor on the morphology of the W_xMo_1-xSe₂ material and show how using elemental selenium can enable the formation of larger and distinct nanoflowers. While the synthesised materials are compositionally homogeneous, they exhibit crystal phase heterogeneity with the co-existing domains of the 1T' and 2H crystal phases, and with evidence of MoSe₂ in the metastable 1T' phase. We show at single atom level of resolution, that tungsten and molybdenum can be found in both the 1T' and 2H lattices. The formation of heterophase 1T'/2H W_xMo_1-xSe₂ electrocatalysts allowed for a considerable improvement in the activity for the acidic hydrogen evolution reaction (HER) compared to pristine, 1T'-dominated, WSe₂. This work can pave the way towards engineered functional nanomaterials where properties, such as electronic and catalytic, have to be controlled at the atomic scale.

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.

Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e²/h. Recently, 2M-WS₂, a new stable phase of transition metal dichalcogenides with a 2M structure showing a layer configuration identical to that of the monolayer 1T' TMDs, was suggested to be a QSH insulator as well as a superconductor with a critical transition temperature of around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS₂. The TSS exhibit characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z2 topological states therein. We expect that 2M-WS₂ with coexisting superconductivity and TSS might host the promising Majorana bound states.

Gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 devices

Tunable electrical phase transitions based on the structural and quantum-state phase transitions in two-dimensional transition-metal dichalcogenides have attracted attention in both semiconducting electronics and quantum electronics applications. Here, we report gate-voltage-induced reversible electrical phase transitions in Mo_0.67W_0.33Se₂ (MoWSe) field-effect transistors prepared on SiO₂/Si substrates. In gate-induced depletion regions of the 2H phase, an electrical current resumes flow at 150 K < T < 200 K with decreasing T irrespective of the layer number (n) for MoWSe when n < 20. The newly appearing electron-doped-type conducting channel again enters the 2H-phase region when the back-gate voltage increases, accompanied by the negative differential transconductance for four-layer and monolayer devices or by a deflection point in the transfer curves for a multilayer device. The thermal activation energies of the new conducting and 2H-phase branches differ by one order of magnitude at the same gate voltage for both the four-layer and monolayer cases, indicating that the electrical band at the Fermi level was modified. The hysteresis measurements for the gate voltage were performed with a five-layer device, which confirms the reversible electrical transition behavior. The possible origins of the nucleated conducting phase in the depletion region of the 2H phase of MoWSe are discussed.

Synthesis of mono- and few-layered n-type WSe2 from solid state inorganic precursors

Tuning the charge transport properties of two-dimensional transition metal dichalcogenides (TMDs) is pivotal to their future device integration in post-silicon technologies. To date, co-doping of TMDs during growth still proves to be challenging, and the synthesis of doped WSe2, an otherwise ambipolar material, has been mainly limited to p-doping. Here, we demonstrate the synthesis of high-quality n-type monolayered WSe2 flakes using a solid-state precursor for Se, zinc selenide. n-Type transport has been reported with prime electron mobilities of up to 10 cm2 V-1 s-1. We also demonstrate the tuneability of doping to p-type transport with hole mobilities of 50 cm2 V-1 s-1 after annealing in air. n-Doping has been attributed to the presence of Zn adatoms on the WSe2 flakes as revealed by X-ray photoelectron spectroscopy (XPS), spatially resolved time of flight secondary ion mass spectroscopy (SIMS) and angular dark-field scanning transmission electron microscopy (AD-STEM) characterization of WSe2 flakes. Monolayer WSe2 flakes exhibit a sharp photoluminescence (PL) peak at room temperature and highly uniform emission across the entire flake area, indicating a high degree of crystallinity of the material. This work provides new insight into the synthesis of TMDs with charge carrier control, to pave the way towards post-silicon electronics.

Evidence of a room-temperature quantum spin Hall edge state in a higher-order topological insulator

Room-temperature realization of macroscopic quantum phases is one of the major pursuits in fundamental physics^1,2. The quantum spin Hall phase^3-6 is a topological quantum phase that features a two-dimensional insulating bulk and a helical edge state. Here we use vector magnetic field and variable temperature based scanning tunnelling microscopy to provide micro-spectroscopic evidence for a room-temperature quantum spin Hall edge state on the surface of the higher-order topological insulator Bi₄Br₄. We find that the atomically resolved lattice exhibits a large insulating gap of over 200 meV, and an atomically sharp monolayer step edge hosts an in-gap gapless state, suggesting topological bulk-boundary correspondence. An external magnetic field can gap the edge state, consistent with the time-reversal symmetry protection inherent in the underlying band topology. We further identify the geometrical hybridization of such edge states, which not only supports the Z₂ topology of the quantum spin Hall state but also visualizes the building blocks of the higher-order topological insulator phase. Our results further encourage the exploration of high-temperature transport quantization of the putative topological phase reported here.

Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation

The transition metal dichalcogenide (TMD)-metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe₂/Au interface by twist engineering, capable of modulating the WSe₂ carrier doping from an intrinsic p-type to n-type. Scanning tunneling microscope/spectroscopy gives direct evidence of enhanced interfacial interaction induced doping in WSe₂ as the twist angle with respect to the topmost (100) lattice of gold changing from 15 to 0°. Taking advantage of the strong coupling interface achieved this way, we have moved a step further to realize an n-p-n-type WSe₂ homojunction. The intrinsic doping of WSe₂ can be recovered by germanium intercalation. Density functional theory calculations confirm that twist angle and intercalation-dependent charge transfer related doping are involved in our observations. Our work offers ways for electronically tuning the metal-2D semiconductor interface.

Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi4Br4

Searching for quantum spin Hall insulators with large fully opened energy gap to overcome the thermal disturbance at room temperature has attracted tremendous attention because of the robustness of one-dimensional (1D) spin-momentum locked topological edge states in the practical applications of electronic devices and spintronics. Here, we report the investigation of topological nature of monolayer Bi₄Br₄ by the techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy. The possible topological nontriviality of 1D edge state integrals within the large energy gap (∼0.2 eV) is revealed by the first-principle calculations. The ARPES measurements at different temperatures show a temperature-induced Lifshitz transition, corresponding to the resistivity anomaly evoked by the chemical potential shift. The connection between the emergency of superconductivity and the Lifshitz transition is discussed.

A bright future for engineering piezoelectric 2D crystals

The piezoelectric effect, mechanical-to-electrical and electrical-to-mechanical energy conversion, is highly beneficial for functional and responsive electronic devices. To fully exploit this property, miniaturization of piezoelectric materials is the subject of intense research. Indeed, select atomically thin 2D materials strongly exhibit the piezoelectric effect. The family of 2D crystals consists of over 7000 chemically distinct members that can be further manipulated in terms of strain, functionalization, elemental substitution (i.e. Janus 2D crystals), and defect engineering to induce a piezoelectric response. Additionally, most 2D crystals can stack with other similar or dissimilar 2D crystals to form a much greater number of complex 2D heterostructures whose properties are quite different to those of the individual constituents. The unprecedented flexibility in tailoring 2D crystal properties, coupled with their minimal thickness, make these emerging highly attractive for advanced piezoelectric applications that include pressure sensing, piezocatalysis, piezotronics, and energy harvesting. This review summarizes literature on piezoelectricity, particularly out-of-plane piezoelectricity, in the vast family of 2D materials as well as their heterostructures. It also describes methods to induce, enhance, and control the piezoelectric properties. The volume of data and role of machine learning in predicting piezoelectricity is discussed in detail, and a prospective outlook on the 2D piezoelectric field is provided.

Atomic-Scale Visualization of Polar Domain Boundaries in Ferroelectric In2Se3 at the Monolayer Limit

Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for broad applications in nanoelectronics and quantum information technology. Due to their complexity and diversity, the internal atomic and electronic structure of domain boundaries that governs the electronic properties remains far from being elucidated. By using scanning tunneling microscopy and spectroscopy (STM/S) combined with density functional theory (DFT) calculations, we directly visualize the atomic structure of polar domain boundaries in two-dimensional (2D) ferroelectric β'-In₂Se₃ down to the monolayer limit. We observe a double-barrier energy potential with a width of about 3 nm across the 60° tail-to-tail domain boundaries in monolayer β'-In₂Se₃. The results will deepen our understanding of domain boundaries in 2D ferroelectric materials and stimulate innovative applications of these materials.

Controllable fabrication and photocatalytic performance of nanoscale single-layer MoSe2 islands with substantial edges on an Ag(111) substrate

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as new electrocatalysts and photocatalysts. The edge sites of 2D TMDs show high catalytic activity and are thus favored at the catalyst surface over TMD inert basal planes. However, 2D TMDs that predominantly expose edges are thermodynamically unfavorable, limiting the number of edge sites at the surface. Herein, we demonstrate a controllable synthesis strategy of single-layer 2D MoSe₂ islands with a lateral size of approximately 5-12 nm on an Ag(111) substrate by pre-deposition of excess Se atoms. The surplus Se atoms react with the Ag(111) substrate and form silver selenide compounds to separate MoSe₂ islands and further prevent MoSe₂ islands from growing up. The nanoscale MoSe₂ islands greatly increase the ratio of exposed edge sites relative to the basal plane sites, which leads to excellent photocatalytic activity for the degradation of a methylene blue (MB) organic pollutant. This work paves the way to limit the size of 2D TMDs at the nanoscale and enables new opportunities for enhancing the catalytic activity of 2D TMD materials.

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States

Quantum spin Hall insulators (QSHIs) have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, obtaining the clean and atomically sharp ES which serves as ideal 1D spin-polarized nondissipative conducting channels is demanding and still a challenge. Here, we report the formation of the quasi-1D Bi₄I₄ nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observation of the topological ES at the step edges by the scanning tunneling microscopy (STM) and spectroscopic-imaging results. The ES reside surround the edge of Bi₄I₄ nanoribbons and exhibits noteworthy robustness against nontime reversal symmetry (non-TRS) perturbations. The theoretical simulations verify the topological nontriviality of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi₄I₄ nanoribbons, benefiting to engineer the topological features by using the 1D nanoribbons as building blocks.

Diverse Structures and Magnetic Properties in Nonlayered Monolayer Chromium Selenide

Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe₂ and Cr₂Se₃ grown by molecular beam epitaxy. In the monolayer CrSe₂, 1T-CrSe₂ with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe₂ can be transformed into Cr₂Se₃ with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe₂ is antiferromagnetic, monolayer Cr₂Se₃ is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.

Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases

The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.

Topological electronic states and thermoelectric transport at phase boundaries in single-layer WSe2: an effective Hamiltonian theory

Monolayer transition metal dichalcogenides in the distorted octahedral 1T' phase exhibit a large bulk bandgap and gapless boundary states, which is an asset in the ongoing quest for topological electronics. In single-layer tungsten diselenide (WSe₂), the boundary states have been observed at well ordered interfaces between 1T' and semiconducting (1H) phases. This paper proposes an effective 4-band theory for the boundary states in single-layer WSe₂, describing a Kramers pair of in-gap states as well as the behaviour at the spectrum termination points on the conduction and valence bands of the 1T' phase. The spectrum termination points determine the temperature and chemical potential dependences of the ballistic conductance and thermopower at the phase boundary. Notably, the thermopower shows an ambipolar behaviour, changing the sign in the bandgap of the 1T'-WSe₂and reflecting its particle-hole asymmetry. The theory establishes a link between the bulk band structure and ballistic boundary transport in single-layer WSe₂and is applicable to a range of related topological materials.

Atomically Thin Quantum Spin Hall Insulators

Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Among them is the quantum spin Hall (QSH) insulator-a 2D state of matter that arises from interplay of topological band inversion and strong spin-orbit coupling, with large tunable bulk bandgaps up to 800 meV and gapless, 1D edge states. Reviewing recent advances in materials science and engineering alongside theoretical description, the QSH materials library is surveyed with focus on the prospects for QSH-based device applications. In particular, theoretical predictions of nontrivial superconducting pairing in the QSH state toward Majorana-based topological quantum computing are discussed, which are the next frontier in QSH materials research.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Local Electronic Properties of Coherent Single-Layer WS2/WSe2 Lateral Heterostructures

Lateral single-layer transition metal dichalcogenide (TMD) heterostructures are promising building blocks for future ultrathin devices. Recent advances in the growth of coherent heterostructures have improved the structural precision of lateral heterojunctions, but an understanding of the electronic effects of the chemical transition at the interface and associated strain is lacking. Here we present a scanning tunneling microscopy study of single-layer coherent TMD heterostructures with nearly uniform strain on each side of the heterojunction interface. We have characterized the local topography and electronic structure of single-layer WS₂/WSe₂ heterojunctions exhibiting ultrasharp coherent interfaces. Uniform built-in strain on each side of the interface arising from lattice mismatch results in a reduction of the bandgap of WS₂. By mapping the tunneling differential conductance across the interface, we find type-II band alignment and an ultranarrow electronic transition region only ∼3 nm in width that arises from wave function mixing between the two materials.

Colossal Terahertz Photoresponse at Room Temperature: A Signature of Type-II Dirac Fermiology

The discovery of Dirac semimetal has stimulated bourgeoning interests for exploring exotic quantum-transport phenomena, holding great promise for manipulating the performance of photoelectric devices that are related to nontrivial band topology. Nevertheless, it still remains elusive on both the device implementation and immediate results, with some enhanced or technically applicable electronic properties signified by the Dirac fermiology. By means of Pt doping, a type-II Dirac semimetal Ir_1-xPt_xTe₂ with protected crystal structure and tunable Fermi level has been achieved in this work. It has been envisioned that the metal-semimetal-metal device exhibits an order of magnitude performance improvement at terahertz frequency when the Fermi level is aligned with the Dirac node (i.e., x ∼ 0.3) and a room-temperature photoresponsivity of 0.52 A·W^-1 at 0.12 THz and 0.45 A·W^-1 at 0.3 THz, which benefited from the excitation of type-II Dirac fermions. Furthermore, van der Waals integration with Dirac semimetals exhibits superb performance with noise equivalent power less than 24 pW·Hz^-0.5, rivaling the state-of-the-art detectors. Our work provides a route to explore the nontrivial topology of Dirac semimetal for addressing targeted applications in imaging and biomedical sensing across a terahertz gap.

Semiconductor to topological insulator transition induced by stress propagation in metal dichalcogenide core-shell lateral heterostructures

Polymorphic phase transitions are an important route for engineering the properties of two-dimensional materials. Heterostructure construction, on the other hand, not only allows the integration of different functionalities for device applications, but also enables the exploration of new physics arising from proximity coupling. Yet, implementing a design that incorporates the advantages of both remains underexplored. Here, based on comprehensive experimental and theoretical studies of the WSe₂/SnSe₂ core-shell lateral heterostructure, we demonstrate an unexpected H to T' phase transition in transition metal dichalcogenides (TMDs), correlating with a change of the material properties from a semiconductor to a topological insulator (TI), and propose a novel shell-to-core stress propagation mechanism. This finding offers new insights into TMD phase transitions empowered by the rational design of heterostructures. Owing to the superconducting properties of SnSe₂ at low temperatures, the unique TI/superconductor core-shell template is expected to add to the arsenal in the ongoing search for Majorana fermions in condensed matter systems.

Epitaxial Growth of Single-Phase 1T'-WSe2 Monolayer with Assistance of Enhanced Interface Interaction

The WSe₂ monolayer in 1T' phase is reported to be a large-gap quantum spin Hall insulator, but is thermodynamically metastable and so far the fabricated samples have always been in the mixed phase of 1T' and 2H, which has become a bottleneck for further exploration and potential applications of the nontrivial topological properties. Based on first-principle calculations in this work, it is found that the 1T' phase could be more stable than 2H phase with enhanced interface interactions. Inspired by this discovery, SrTiO₃ (100) is chosen as substrate and WSe₂ monolayer is successfully grown in a 100% single 1T' phase using the molecular beam epitaxial method. Combining in situ scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements, it is found that the in-plane compressive strain in the interface drives the 1T'-WSe₂ into a semimetallic phase. Besides providing a new material platform for topological states, the results show that the interface interaction is a new approach to control both the structure phase stability and the topological band structures of transition metal dichalcogenides.

Controlling the Quantum Spin Hall Edge States in Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDs) of Mo and W in their 1T' crystalline phase host the quantum spin Hall (QSH) insulator phase. We address the electronic properties of the QSH edge states by means of first-principles calculations performed on realistic models of edge terminations of different stoichiometries. The QSH edge states show a tendency to have complex band dispersions and coexist with topologically trivial edge states. We nevertheless identify two stable edge terminations that allow isolation of a pair of helical edge states within the band gap of TMDs, with monolayer 1T'-WSe₂ being the most promising material. We also characterize the finite-size effects in the electronic structure of 1T'-WSe₂ nanoribbons. Our results provide guidance to the experimental studies and possible practical applications of QSH edge states in monolayer 1T'-TMDs.

Strain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T^{'}-WTe_{2}

A quantum spin hall insulator is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T^{'}-WTe_{2} exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along the a axis or a tensile strain along the b axis can drive 1T^{'}-WTe_{2} into an full gap insulating phase. A combined study of molecular beam epitaxy and in situ scanning tunneling microscopy or spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.

Heavy chalcogenide-transition metal clusters as coordination polymer nodes

While metal-oxygen clusters are widely used as secondary building units in the construction of coordination polymers or metal-organic frameworks, multimetallic nodes with heavier chalcogenide atoms (S, Se, and Te) are comparatively untapped. The lower electronegativity of heavy chalcogenides means that transition metal clusters of these elements generally exhibit enhanced coupling, delocalization, and redox-flexibility. Leveraging these features in coordination polymers provides these materials with extraordinary properties in catalysis, conductivity, magnetism, and photoactivity. In this perspective, we summarize common transition metal heavy chalcogenide building blocks including polynuclear metal nodes with organothiolate/selenolate or anionic heavy chalcogenide atoms. Based on recent discoveries, we also outline potential challenges and opportunities for applications in this field.

Signature of Large-Gap Quantum Spin Hall State in the Layered Mineral Jacutingaite

Quantum spin Hall (QSH) insulators host edge states, where the helical locking of spin and momentum suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, which would enable room temperature dissipationless transport in their edge states. Here we show that the layered mineral jacutingaite (Pt₂HgSe₃) is a candidate QSH material, realizing the long sought-after Kane-Mele insulator. Using scanning tunneling microscopy, we measure a band gap in excess of 100 meV and identify the hallmark edge states. By calculating the [Formula: see text] invariant, we confirm the topological nature of the gap. Jacutingaite is stable in air, and we demonstrate exfoliation down to at least two layers and show that it can be integrated into heterostructures with other two-dimensional materials. This adds a topological insulator to the 2D quantum material library.

Direct synthesis of metastable phases of 2D transition metal dichalcogenides

The different polymorphic phases of transition metal dichalcogenides (TMDs) have attracted enormous interest in the last decade. The metastable metallic and small band gap phases of group VI TMDs displayed leading performance for electrocatalytic hydrogen evolution, high volumetric capacitance and some of them exhibit large gap quantum spin Hall (QSH) insulating behaviour. Metastable 1T(1T') phases require higher formation energy, as compared to the thermodynamically stable 2H phase, thus in standard chemical vapour deposition and vapour transport processes the materials normally grow in the 2H phases. Only destabilization of their 2H phase via external means, such as charge transfer or high electric field, allows the conversion of the crystal structure into the 1T(1T') phase. Bottom-up synthesis of materials in the 1T(1T') phases in measurable quantities would broaden their prospective applications and practical utilization. There is an emerging evidence that some of these 1T(1T') phases can be directly synthesized via bottom-up vapour- and liquid-phase methods. This review will provide an overview of the synthesis strategies which have been designed to achieve the crystal phase control in TMDs, and the chemical mechanisms that can drive the synthesis of metastable phases. We will provide a critical comparison between growth pathways in vapour- and liquid-phase synthesis techniques. Morphological and chemical characteristics of synthesized materials will be described along with their ability to act as electrocatalysts for the hydrogen evolution reaction from water. Phase stability and reversibility will be discussed and new potential applications will be introduced. This review aims at providing insights into the fundamental understanding of the favourable synthetic conditions for the stabilization of metastable TMD crystals and at stimulating future advancements in the field of large-scale synthesis of materials with crystal phase control.

Quantum spin Hall state in monolayer 1T'-TMDCs

Although the 1T'phase is rare in the transition metal dichalcogenides (TMDCs) family, it has attracted rapid growing research interest due to the coexistence of superconductivity, unsaturated magneto-resistance, topological phases etc. Among them, the quantum spin Hall (QSH) state in monolayer 1T'-TMDCs is especially interesting because of its unique van der Waals crystal structure, bringing advantages in the fundamental research and application. For example, the van der Waals two-dimensional (2D) layer is vital in building novel functional vertical heterostructure. The monolayer 1T'-TMDCs has become one of the widely studied QSH insulator. In this review, we review the recent progress in fabrications of monolayer 1T'-TMDCs and evidence that establishes it as QSH insulator.