Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing

In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation. In particular, novel computing paradigms have emerged to minimize data movement, which is known to contribute the largest amount of energy consumption in conventional computing systems based on the von Neumann architecture. In-memory computing (IMC) provides a means to compute within data with minimum data movement and excellent energy efficiency and performance. To meet these goals, resistive-switching random-access memory (RRAM) appears to be an ideal candidate thanks to its excellent scalability and nonvolatile storage. However, circuit implementations of modern artificial intelligence (AI) models require highly specialized device properties that need careful RRAM device engineering. This work addresses the RRAM concept from materials, device, circuit, and application viewpoints, focusing on the physical device properties and the requirements for storage and computing applications. Memory applications, such as embedded nonvolatile memory (eNVM) in novel microcontroller units (MCUs) and storage class memory (SCM), are highlighted. Applications in IMC, such as hardware accelerators of neural networks, data query, and algebra functions, are illustrated by referring to the reported demonstrators with RRAM technology, evidencing the remaining challenges for the development of a low-power, sustainable AI.

Chaotic recurrent neural networks for brain modelling: A review

Even in the absence of external stimuli, the brain is spontaneously active. Indeed, most cortical activity is internally generated by recurrence. Both theoretical and experimental studies suggest that chaotic dynamics characterize this spontaneous activity. While the precise function of brain chaotic activity is still puzzling, we know that chaos confers many advantages. From a computational perspective, chaos enhances the complexity of network dynamics. From a behavioural point of view, chaotic activity could generate the variability required for exploration. Furthermore, information storage and transfer are maximized at the critical border between order and chaos. Despite these benefits, many computational brain models avoid incorporating spontaneous chaotic activity due to the challenges it poses for learning algorithms. In recent years, however, multiple approaches have been proposed to overcome this limitation. As a result, many different algorithms have been developed, initially within the reservoir computing paradigm. Over time, the field has evolved to increase the biological plausibility and performance of the algorithms, sometimes going beyond the reservoir computing framework. In this review article, we examine the computational benefits of chaos and the unique properties of chaotic recurrent neural networks, with a particular focus on those typically utilized in reservoir computing. We also provide a detailed analysis of the algorithms designed to train chaotic RNNs, tracing their historical evolution and highlighting key milestones in their development. Finally, we explore the applications and limitations of chaotic RNNs for brain modelling, consider their potential broader impacts beyond neuroscience, and outline promising directions for future research.

An Adaptive Solid-State Synapse with Bi-Directional Relaxation for Multimodal Recognition and Spatio-Temporal Learning

The brain's unique processing power, such as perception, understanding, and interaction with the multimodal world, is achieved through diverse synaptic functionalities, which include varied temporal responses and adaptation. Although specific functions in brain-like computing have been successfully realized, emulating multimodal recognition and spatio-temporal learning remain significant challenges due to the difficulties in achieving multimodal signal processing and adaptive long-term plasticity in a single electronic synapse. Here, a purely electrically-modulated ferroelectric tunnel junction (FTJ) memristive synapse which realizes multimodal recognition and spatio-temporal pattern identification, through the integration of oxygen vacancies migration and ferroelectric polarization switching mechanisms, providing bi-directional relaxation and adaptive long-term plasticity simultaneously in the isolated device. The bi-directional relaxation enables multimodal recognition in the purely electrically-modulated FTJ device by encoding distinct sensory signals with different electrical polarities. The multimodal perception task is implemented with a multimodal computing system combining visual and speech pattern recognition. Moreover, the adaptive long-term plasticity allows spatio-temporal pattern recognition, which is demonstrated by identifying object orientation and direction of motion with a neural network incorporating the arrayed synapses. This work provides a feasible approach for designing bio-realistic electronic synapses and achieving highly intelligent neuromorphic computing.

Mechano-gated iontronic piezomemristor for temporal-tactile neuromorphic plasticity

In bioneuronal systems, the synergistic interaction between mechanosensitive piezo channels and neuronal synapses can convert and transmit pressure signals into complex temporal plastic pulses with excitatory and inhibitory features. However, existing artificial tactile neuromorphic systems struggle to replicate the elaborate temporal plasticity observed between excitatory and inhibitory features in biological systems, which is critical for the biomimetic processing and memorizing of tactile information. Here we demonstrate a mechano-gated iontronic piezomemristor with programmable temporal-tactile plasticity. This system utilizes a bicontinuous phase-transition heterogel as a stiffness-governed iontronic mechanogate to achieve bidirectional piezoresistive signals, resulting in wide-span dynamic tactile sensing. By micro-integrating the mechanogate with an oscillatory iontronic memristor, it exhibits stiffness-induced bipolarized excitatory and inhibitory neuromorphics, thereby enabling the activation of temporal-tactile memory and learning functions (e.g., Bienenstock-Cooper-Munro and Hebbian learning rules). Owing to dynamic covalent bond network and iontronic features, reconfigurable tactile plasticity can be achieved. Importantly, bridging to bioneuronal interfaces, these systems possess the capacity to construct a biohybrid perception-actuation circuit. We anticipate that such temporal plastic piezomemristor devices for abiotic-biotic interfaces can serve as promising hardware systems for interfacing dynamic tactile behaviors into diverse neuromodulations.

IGZO-Based Electronic Device Application: Advancements in Gas Sensor, Logic Circuit, Biosensor, Neuromorphic Device, and Photodetector Technologies

Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm2/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture.

Advances in Metal Halide Perovskite Memristors: A Review from a Co-Design Perspective

The memristor has recently demonstrated considerable potential in the field of large-scale data information processing. Metal halide perovskites (MHPs) have emerged as the leading contenders for memristors due to their sensitive optoelectronic response, low power consumption, and ability to be prepared at low temperatures. This work presents a comprehensive enumeration and analysis of the predominant research advancements in mechanisms of resistance switch (RS) behaviors in MHPs-based memristors, along with a summary of useful characterization techniques. The impact of diverse optimization techniques on the functionality of perovskite memristors is examined and synthesized. Additionally, the potential of MHPs memristors in data processing, physical encryption devices, artificial synapses, and brain-like computing advancement of MHPs memristors is evaluated. This review can prove a valuable reference point for the future development of perovskite memristors applications. In conclusion, the current challenges and prospects of MHPs-based memristors are discussed in order to provide insights into potential avenues for the development of next-generation information storage technologies and biomimetic applications.

Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration

The ever-increasing volume of complex data poses significant challenges to conventional sequential global processing methods, highlighting their inherent limitations. This computational burden has catalyzed interest in neuromorphic computing, particularly within artificial neural networks (ANNs). In pursuit of advancing neuromorphic hardware, researchers are focusing on developing computation strategies and constructing high-density crossbar arrays utilizing history-dependent, multistate nonvolatile memories tailored for multiply-accumulate (MAC) operations. However, the real-time collection and processing of massive, dynamic data sets require an innovative computational paradigm akin to that of the human brain. Spiking neural networks (SNNs), representing the third generation of ANNs, are emerging as a promising solution for real-time spatiotemporal information processing due to their event-based spatiotemporal capabilities. The ideal hardware supporting SNN operations comprises artificial neurons, artificial synapses, and their integrated arrays. Currently, the structural complexity of SNNs and spike-based methodologies requires hardware components with biomimetic behaviors that are distinct from those of conventional memristors used in deep neural networks. These distinctive characteristics required for neuron and synapses devices pose significant challenges. Developing effective building blocks for SNNs, therefore, necessitates leveraging the intrinsic properties of the materials constituting each unit and overcoming the integration barriers. This review focuses on the progress toward memristor-based spiking neural network neuromorphic hardware, emphasizing the role of individual components such as memristor-based neurons, synapses, and array integration along with relevant biological insights. We aim to provide valuable perspectives to researchers working on the next generation of brain-like computing systems based on these foundational elements.

Integration of CeO2-Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses

The CeO2-based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, significant challenges such as high power consumption and poor device reliability hinder its broad application in neuromorphic microchips. To tackle these issues, in this work, we design a novel bilayer (BL) memristor by integrating a CeO2-based memristor with a Co-CeO2 vertically aligned nanocomposite (VAN) layer and compare it with the single layer (SL) memristor. Preliminary electrical testing reveals that the BL memristor offers a reduced set/reset voltage (∼67% lower), a higher on/off ratio (∼5 × 102), enhanced device reliability, and improved device-to-device variation compared to the SL memristor. Insight from COMSOL simulation, coupled with microstructural analysis, provides a comprehensive elucidation on how the VAN layer facilitates the selective conductive filament (CF) formation. Subsequently, the plasticity of the BL memristor is evaluated through long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-time-dependent plasticity (STDP). The spiking neural network (SNN) built upon the BL memristor achieves remarkable accuracy (∼94%) after only 12 iterations, underscoring its potential for high-performance neural networks.

An Aquatic Autonomic Nervous System

Reproducing human nervous systems with endogenous mechanisms has attracted increasing attention, driven by its great potential in streamlining the neuro-electronic interfaces with bilateral signaling. Here, an artificial aquatic autonomic nervous system (ANS) with switchable excitatory/inhibitory characteristics and acetylcholine (ACh)-mediated plasticity is reported based on the newly emerged organic photoelectrochemical transistor (OPECT). Under the modulation of spatial light and ACh, the system exhibits an immediate switch between excitation and inhibition, and many pulse patterns as well as advanced ANS functions are mimicked. To demonstrate its potential usage, the artificial ANS is then utilized to control artificial pupils and muscles to emulate real biological responses during an emergency. In contrast to previous solid-state attempts, this ANS is aqueous compatible just like biological nervous systems, which are capable of real neurotransmitter mediation.

Quantum Dots for Resistive Switching Memory and Artificial Synapse

Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck. Recently, due to their unique optoelectronic properties, solution processability, fast switching speeds, and low operating voltages, quantum dots (QDs) have drawn substantial research attention as candidate materials for memristors and artificial synapses. This review covers recent advancements in QD-based resistive random-access memory (RRAM) for resistive memory devices and artificial synapses. Following a brief introduction to QDs, the fundamental principles of the switching mechanism in RRAM are introduced. Then, the RRAM materials, synthesis techniques, and device performance are summarized for a relative comparison of RRAM materials. Finally, we introduce QD-based RRAM and discuss the challenges associated with its implementation in memristors and artificial synapses.

An Au25 nanocluster/MoS2 vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation

Color vision relies on three cone photoreceptors that are sensitive to different wavelengths of light. The interaction of three incident light wavelengths over time creates a fascinating color coupling perception, termed chromamorphic computing. However, the realization of this fascinating characteristic in semiconductor devices remains a great challenge. Herein, a mixed-dimensional optoelectronic transistor based on a novel metal nanocluster Au25(SC12H25)18 and two-dimensional MoS2 van der Waals (vdWaals) heterojunction is proposed for chromamorphic visual-afterimage emulation with red-green-blue three-color spatiotemporal coupling perception. This distinguished molecular-like electronic level of Au25 nanoclusters allows the transistor to have visible light-sensitive properties, endowing it with the ability to perceive color information. Moreover, the chromamorphic functions are realized using a color spatiotemporal coupling approach. By utilizing the photogating effect of light stimulus, the device exhibits visual experience-dependent plasticity in accordance with the Bienenstock-Cooper-Munro (BCM) learning rule. Most importantly, for the first time, intriguing visual afterimages could be implemented using a color sensitization approach based on a close relationship between visual persistence and negative afterimages. These results represent an important step towards a new generation of intelligent visual color perception systems for human-computer interaction, bionic robots, etc.

Ultralow Energy Consumption and Fast Neuromorphic Computing Based on La0.1Bi0.9FeO3 Ferroelectric Tunnel Junctions

Low-power and fast artificial neural network devices represent the direction in developing analogue neural networks. Here, an ultralow power consumption (0.8 fJ) and rapid (100 ns) La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 ferroelectric tunnel junction artificial synapse has been developed to emulate the biological neural networks. The visual memory and forgetting functionalities have been emulated based on long-term potentiation and depression with good linearity. Moreover, with a single device, logical operations of "AND" and "OR" are implemented, and an artificial neural network was constructed with a recognition accuracy of 96%. Especially for noisy data sets, the recognition speed is faster after preprocessing by the device in the present work. This sets the stage for highly reliable and repeatable unsupervised learning.

A Photoelectrochemical Retinomorphic Synapse

Reproducing human visual functions with artificial devices is a long-standing goal of the neuromorphic domain. However, emulating the chemical language communication of the visual system in fluids remains a grand challenge. Here, a "multi-color" hydrogel-based photoelectrochemical retinomorphic synapse is reported with unique chemical-ionic-electrical signaling in an aqueous electrolyte that enables, e.g., color perception and biomolecule-mediated synaptic plasticity. Based on the specific enzyme-catalyzed chromogenic reactions, three multifunctional colored hydrogels are developed, which can not only synergize with the Bi2S3 photogate to recognize the primary colors but also synergize with a given polymeric channel to promote the long-term memory of the system. A synaptic array is further constructed for sensing color images and biomolecule-coded information communication. Taking advantage of the versatile biochemistry, the biochemical-driven reversible photoelectric response of the cone cell is further mimicked. This work introduces rich chemical designs into retinomorphic devices, providing a perspective for replicating the human visual system in fluids.

Neuromorphic learning and recognition in WO3-xthin film-based forming-free flexible electronic synapses

In pursuing advanced neuromorphic applications, this study introduces the successful engineering of a flexible electronic synapse based on WO3-x, structured as W/WO3-x/Pt/Muscovite-Mica. This artificial synapse is designed to emulate crucial learning behaviors fundamental to in-memory computing. We systematically explore synaptic plasticity dynamics by implementing pulse measurements capturing potentiation and depression traits akin to biological synapses under flat and different bending conditions, thereby highlighting its potential suitability for flexible electronic applications. The findings demonstrate that the memristor accurately replicates essential properties of biological synapses, including short-term plasticity (STP), long-term plasticity (LTP), and the intriguing transition from STP to LTP. Furthermore, other variables are investigated, such as paired-pulse facilitation, spike rate-dependent plasticity, spike time-dependent plasticity, pulse duration-dependent plasticity, and pulse amplitude-dependent plasticity. Utilizing data from flat and differently bent synapses, neural network simulations for pattern recognition tasks using the Modified National Institute of Standards and Technology dataset reveal a high recognition accuracy of ∼95% with a fast learning speed that requires only 15 epochs to reach saturation.

Adaptive Processing Enabled by Sodium Alginate Based Complementary Memristor for Neuromorphic Sensory System

Adaptive processing allows sensory systems to autonomically adjust their sensitivity with exposure to a constant sensory stimulus and thus organisms to adapt to environmental variations. Bioinspired electronics with adaptive functions are highly desirable for the development of neuromorphic sensory systems (NSSs). Herein, the functions of desensitization and sensitivity changing with background intensity (i.e., Weber's law), as two fundamental cues of sensory adaptation, are biorealistically demonstrated in an Ag nanowire (NW)-embedded sodium alginate (SA) based complementary memristor. In particular, Weber's law is experimentally emulated in a single complementary memristor. Furthermore, three types of adaptive NSS unit are constructed to realize a multiple perceptual capability that processes the stimuli of illuminance, temperature, and pressure signals. Taking neuromorphic vision as an example, scotopic and photopic adaptation functions are well reproduced for image enhancement against dark and bright backgrounds. Importantly, an NSS system with multisensory integration function is demonstrated by combining light and pressure spikes, where the accuracy of pattern recognition is obviously enhanced relative to that of an individual sense. This work offers a new strategy for developing neuromorphic electronics with adaptive functions and paves the way toward developing a highly efficient NSS.

Conformational transitions in redissolved silk fibroin films and application for printable self-powered multistate resistive memory biomaterials

3D printing of water stable proteins with elastic properties offers a broad range of applications including self-powered biomedical devices driven by piezoelectric biomaterials. Here, we present a study on water-soluble silk fibroin (SF) films. These films were prepared by mixing degummed silk fibers and calcium chloride (CaCl2) in formic acid, resulting in a silk I-like conformation, which was then converted into silk II by redissolving in phosphate buffer (PBS). Circular dichroism, Raman and infrared (IR) spectroscopies were used to investigate the transitions of secondary structure in silk I and silk II as the pH of the solvent and the sonication time were changed. We showed that a solvent with low pH (e.g. 4) maintains the silk I β-turn structure; in contrast solvent with higher pH (e.g. 7.4) promotes β-sheet features of silk II. Ultrasonic treatment facilitates the transition to water stable silk II only for the SF redissolved in PBS. SF from pH 7.4 solution has been printed using extrusion-based 3D printing. A self-powered memristor was realized, comprising an SF-based electric generator and an SF 3D-printed memristive unit connected in series. By exploiting the piezoelectric properties of silk II with higher β-sheet content and Ca2+ ion transport phenomena, the application of an input voltage driven by a SF generator to SF 3D printed holey structures induces a variation from an initial low resistance state (LRS) to a high resistance state (HRS) that recovers in a few minutes, mimicking the transient memory, also known as short-term memory. Thanks to this holistic approach, these findings can contribute to the development of self-powered neuromorphic networks based on biomaterials with memory capabilities.

A Self-Oscillated Organic Synapse for In-Memory Two-Factor Authentication

Entering the era of AI 2.0, bio-inspired target recognition facilitates life. However, target recognition may suffer from some risks when the target is hijacked. Therefore, it is significantly important to provide an encryption process prior to neuromorphic computing. In this work, enlightened from time-varied synaptic rule, an in-memory asymmetric encryption as pre-authentication is utilized with subsequent convolutional neural network (ConvNet) for target recognition, achieving in-memory two-factor authentication (IM-2FA). The unipolar self-oscillated synaptic behavior is adopted to function as in-memory asymmetric encryption, which can greatly decrease the complexity of the peripheral circuit compared to bipolar stimulation. Results show that without passing the encryption process with suitable weights at the correct time, the ConvNet for target recognition will not work properly with an extremely low accuracy lower than 0.86%, thus effectively blocking out the potential risks of involuntary access. When a set of correct weights is evolved at a suitable time, a recognition rate as high as 99.82% can be implemented for target recognition, which verifies the effectiveness of the IM-2FA strategy.

Artificial Funnel Nanochannel Device Emulates Synaptic Behavior

Creating artificial synapses that can interact with biological neural systems is critical for developing advanced intelligent systems. However, there are still many difficulties, including device morphology and fluid selection. Based on Micro-Electro-Mechanical System technologies, we utilized two immiscible electrolytes to form a liquid/liquid interface at the tip of a funnel nanochannel, effectively enabling a wafer-level fabrication, interactions between multiple information carriers, and electron-to-chemical signal transitions. The distinctive ionic transport properties successfully achieved a hysteresis in ionic transport, resulting in adjustable multistage conductance gradient and synaptic functions. Notably, the device is similar to biological systems in terms of structure and signal carriers, especially for the low operating voltage (200 mV), which matches the biological neural potential (∼110 mV). This work lays the foundation for realizing the function of iontronics neuromorphic computing at ultralow operating voltages and in-memory computing, which can break the limits of information barriers for brain-machine interfaces.

Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications

Integrating both electrical and light-modulated multi-type neuromorphic functions in a single synaptic memristive device holds the most potential for realizing next-generation neuromorphic systems, but is still challenging yet achievable. Herein, a simple bi-terminal optoelectronic synaptic memristor is newly proposed based on kesterite Cu2ZnSnS4, exhibiting stable nonvolatile resistive switching with excellent spatial uniformity and unique optoelectronic synaptic behaviors. The device demonstrates not only low switching voltage (-0.39 ± 0.08 V), concentrated Set/Reset voltage distribution (<0.08/0.15 V), and long retention time (>104 s) but also continuously modulable conductance by both electric (different width/interval/amplitude) and light (470-808 nm with different intensity) stimulus. These advantages make the device good electrically and optically simulated synaptic functions, including excitatory and inhibitory, paired-pulsed facilitation, short-/long-term plasticity, spike-timing-dependent plasticity, and "memory-forgetting" behavior. Significantly, decimal arithmetic calculation (addition, subtraction, and commutative law) is realized based on the linear conductance regulation, and high precision pattern recognition (>88%) is well achieved with an artificial neural network constructed by 5 × 5 × 4 memristor array. Predictably, such kesterite-based optoelectronic memristors can greatly open the possibility of realizing multi-functional neuromorphic systems.

A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules

Artificial intelligence (AI) is changing the way computing is performed to cope with real-world, ill-defined tasks for which traditional algorithms fail. AI requires significant memory access, thus running into the von Neumann bottleneck when implemented in standard computing platforms. In this respect, low-latency energy-efficient in-memory computing can be achieved by exploiting emerging memristive devices, given their ability to emulate synaptic plasticity, which provides a path to design large-scale brain-inspired spiking neural networks (SNNs). Several plasticity rules have been described in the brain and their coexistence in the same network largely expands the computational capabilities of a given circuit. In this work, starting from the electrical characterization and modeling of the memristor device, we propose a neuro-synaptic architecture that co-integrates in a unique platform with a single type of synaptic device to implement two distinct learning rules, namely, the spike-timing-dependent plasticity (STDP) and the Bienenstock-Cooper-Munro (BCM). This architecture, by exploiting the aforementioned learning rules, successfully addressed two different tasks of unsupervised learning.

3D-integrated multilayered physical reservoir array for learning and forecasting time-series information

A wide reservoir computing system is an advanced architecture composed of multiple reservoir layers in parallel, which enables more complex and diverse internal dynamics for multiple time-series information processing. However, its hardware implementation has not yet been realized due to the lack of a high-performance physical reservoir and the complexity of fabricating multiple stacks. Here, we achieve a proof-of-principle demonstration of such hardware made of a multilayered three-dimensional stacked 3 × 10 × 10 tungsten oxide memristive crossbar array, with which we further realize a wide physical reservoir computing for efficient learning and forecasting of multiple time-series data. Because a three-layer structure allows the seamless and effective extraction of intricate three-dimensional local features produced by various temporal inputs, it can readily outperform two-dimensional based approaches extensively studied previously. Our demonstration paves the way for wide physical reservoir computing systems capable of efficiently processing multiple dynamic time-series information.

Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis

Physical reservoirs employed to map time-series data and analyze extracted features have attracted interest owing to their low training cost and mitigated interconnection complexity. This study reports a physical reservoir based on a bilayer oxide-based dynamic memristor. The proposed device exhibits a nonlinear current response and short-term memory (STM), satisfying the requirements of reservoir computing (RC). These characteristics are validated using a compact model to account for resistive switching (RS) via the dynamic evolution of the internal state variable and the relocation of oxygen vacancies. Mathematically, the transient current response can be quantitatively described according to a simple set of equations to correlate the theoretical framework with experimental results. Furthermore, the device shows significant reliability and ability to distinguish 4-bit inputs and four diverse neural firing patterns. Therefore, this work shows the feasibility of implementing physical reservoirs in hardware and advances the understanding of the dynamic response.

Hierarchies in Visual Pathway: Functions and Inspired Artificial Vision

The development of artificial intelligence has posed a challenge to machine vision based on conventional complementary metal-oxide semiconductor (CMOS) circuits owing to its high latency and inefficient power consumption originating from the data shuffling between memory and computation units. Gaining more insights into the function of every part of the visual pathway for visual perception can bring the capabilities of machine vision in terms of robustness and generality. Hardware acceleration of more energy-efficient and biorealistic artificial vision highly necessitates neuromorphic devices and circuits that are able to mimic the function of each part of the visual pathway. In this paper, we review the structure and function of the entire class of visual neurons from the retina to the primate visual cortex within reach (Chapter 2) are reviewed. Based on the extraction of biological principles, the recent hardware-implemented visual neurons located in different parts of the visual pathway are discussed in detail in Chapters 3 and 4. Furthermore, valuable applications of inspired artificial vision in different scenarios (Chapter 5) are provided. The functional description of the visual pathway and its inspired neuromorphic devices/circuits are expected to provide valuable insights for the design of next-generation artificial visual perception systems.

Effective electrical manipulation of a topological antiferromagnet by orbital torques

The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn3Sn using orbital torques originating from either metal Mn or oxide CuOx. Although Mn3Sn can convert orbital current to spin current on its own, we find that inserting a heavy metal layer, such as Pt, of appropriate thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behaviour of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity-which may be beneficial for constructing accurate artificial neural networks. Our work paves a way for manipulating the topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.

Filament-free memristors for computing

Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.

Moiré synaptic transistor with room-temperature neuromorphic functionality

Moiré quantum materials host exotic electronic phenomena through enhanced internal Coulomb interactions in twisted two-dimensional heterostructures1-4. When combined with the exceptionally high electrostatic control in atomically thin materials5-8, moiré heterostructures have the potential to enable next-generation electronic devices with unprecedented functionality. However, despite extensive exploration, moiré electronic phenomena have thus far been limited to impractically low cryogenic temperatures9-14, thus precluding real-world applications of moiré quantum materials. Here we report the experimental realization and room-temperature operation of a low-power (20 pW) moiré synaptic transistor based on an asymmetric bilayer graphene/hexagonal boron nitride moiré heterostructure. The asymmetric moiré potential gives rise to robust electronic ratchet states, which enable hysteretic, non-volatile injection of charge carriers that control the conductance of the device. The asymmetric gating in dual-gated moiré heterostructures realizes diverse biorealistic neuromorphic functionalities, such as reconfigurable synaptic responses, spatiotemporal-based tempotrons and Bienenstock-Cooper-Munro input-specific adaptation. In this manner, the moiré synaptic transistor enables efficient compute-in-memory designs and edge hardware accelerators for artificial intelligence and machine learning.

High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO3:MgO Film Memristor

Neuromorphic computing based on memristors capable of in-memory computing is promising to break the energy and efficiency bottleneck of well-known von Neumann architectures. However, unstable and nonlinear conductance updates compromise the recognition accuracy and block the integration of neural network hardware. To this end, we present a highly stable memristor with self-assembled vertically aligned nanocomposite (VAN) SrTiO3:MgO films that achieve excellent resistive switching with low set/reset voltage variability (4.7%/-5.6%) and highly linear conductivity variation (nonlinearity = 0.34) by spatially limiting the conductive channels at the vertical interfaces. Various synaptic behaviors are simulated by continuously modulating the conductance. Especially, convolutional image processing using diverse crossbar kernels is demonstrated, and the artificial neural network achieves an overwhelming recognition accuracy of up to 97.50% for handwritten digits. Even under the perturbation of Poisson noise (λ = 10), 6% Salt and Pepper noise, and 5% Gaussian noise, the high recognition accuracies are retained at 95.43%, 94.56%, and 95.97%, respectively. Importantly, the logic memory function is proven experimentally based on the nonvolatile properties. This work provides a material system and design idea to achieve high-performance neuromorphic computing and logic operation.

Threshold plasticity of SOI-GST microring resonators

Spiking Neural Networks, also known as third generation Artificial Neural Networks, have widely attracted more attention because of their advantages of behaving more biologically interpretable and being more suitable for hardware implementation. Apart from using traditional synaptic plasticity, neural networks can also be based on threshold plasticity, achieving similar functionality. This can be implemented using e.g. the Bienenstock, Cooper and Munro rule. This is a classical unsupervised learning mechanism in which the threshold is closely related to the output of the post-synaptic neuron. We show in simulations that the threshold characteristics of the nonlinear effects of a microring resonator integrated with Ge2Sb2Te5 demonstrate some complex dependencies on the intracavity refractive index, attenuation, and wavelength detuning of the incident optical pulse, and exhibit class II excitability. We also show that we are able to modify the threshold power of the microring resonator by the changes of the refractive index and loss of Ge2Sb2Te5, due to transitions between the crystalline and amorphous states. Simulations show that the presented device exhibits both excitatory and inhibitory learning behavior, either lowering or raising the threshold.

Voltage-Mode Ferroelectric Synapse for Neuromorphic Computing

Ferroelectric materials with a modulable polarization extent hold promise for exploring voltage-driven neuromorphic hardware, in which direct current flow can be minimized. Utilizing a single active layer of an insulating ferroelectric polymer, we developed a voltage-mode ferroelectric synapse that can continuously and reversibly update its states. The device states are straightforwardly manifested in the form of variable output voltage, enabling large-scale direct cascading of multiple ferroelectric synapses to build a deep physical neural network. Such a neural network based on potential superposition rather than current flow is analogous to the biological counterpart driven by action potentials in the brain. A high accuracy of over 97% for the simulation of handwritten digit recognition is achieved using the voltage-mode neural network. The controlled ferroelectric polarization, revealed by piezoresponse force microscopy, turns out to be responsible for the synaptic weight updates in the ferroelectric synapses. The present work demonstrates an alternative strategy for the design and construction of emerging artificial neural networks.

Controlled Memristic Behavior of Metal-Organic Framework as a Promising Memory Device

Metal-organic frameworks (MOFs) have attracted considerable interests for sensing, electrochemical, and catalytic applications. Most significantly, MOFs with highly accessible sites on their surface have promising potential for applications in high-performance computing architecture. In this paper, Mg-MOF-74 (a MOF built of Mg(II) ions linked by 2,5-dioxido-1,4-benzenedicarboxylate (DOBDC) ligands) and graphene oxide composites (Mg-MOF-74@GO) were first used as an active layer to fabricate ternary memory devices. A comprehensive investigation of the multi-bit data storage performance for Mg-MOF-74@GO composites was discussed and summarized. Moreover, the structure change of Mg-MOF-74@GO after introducing GO was thoroughly studied. The as-fabricated resistive random access memory (RRAM) devices exhibit a ternary memristic behavior with low SET voltage, an RHRS/RIRS/RLRS ratio of 103:102:1, superior retention (>104 s), and reliability performance (>102 cycles). Herein, Mg-MOF-74@GO composite films in constructing memory devices were presented with GO-mediated ternary memristic properties, where the distinct resistance states were controlled to achieve multi-bit data storage. The hydrogen bonding system and defects of GO adsorbed in Mg-MOF-74 are the reason for the ternary memristic behavior. The charge trapping assisted hopping is proposed as the operation mechanism, which is further confirmed by XRD and Raman spectra. The GO-mediated Mg-MOF-74 memory device exhibits potential applications in ultrahigh-density information storage systems and in-memory computing paradigms.

Emerging Iontronic Neural Devices for Neuromorphic Sensory Computing

Living organisms have a very mysterious and powerful sensory computing system based on ion activity. Interestingly, studies on iontronic devices in the past few years have proposed a promising platform for simulating the sensing and computing functions of living organisms, because: 1) iontronic devices can generate, store, and transmit a variety of signals by adjusting the concentration and spatiotemporal distribution of ions, which analogs to how the brain performs intelligent functions by alternating ion flux and polarization; 2) through ionic-electronic coupling, iontronic devices can bridge the biosystem with electronics and offer profound implications for soft electronics; 3) with the diversity of ions, iontronic devices can be designed to recognize specific ions or molecules by customizing the charge selectivity, and the ionic conductivity and capacitance can be adjusted to respond to external stimuli for a variety of sensing schemes, which can be more difficult for electron-based devices. This review provides a comprehensive overview of emerging neuromorphic sensory computing by iontronic devices, highlighting representative concepts of both low-level and high-level sensory computing and introducing important material and device breakthroughs. Moreover, iontronic devices as a means of neuromorphic sensing and computing are discussed regarding the pending challenges and future directions.

Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges

Artificial neurons and synapses are considered essential for the progress of the future brain-inspired computing, based on beyond von Neumann architectures. Here, a discussion on the common electrochemical fundamentals of biological and artificial cells is provided, focusing on their similarities with the redox-based memristive devices. The driving forces behind the functionalities and the ways to control them by an electrochemical-materials approach are presented. Factors such as the chemical symmetry of the electrodes, doping of the solid electrolyte, concentration gradients, and excess surface energy are discussed as essential to understand, predict, and design artificial neurons and synapses. A variety of two- and three-terminal memristive devices and memristive architectures are presented and their application for solving various problems is shown. The work provides an overview of the current understandings on the complex processes of neural signal generation and transmission in both biological and artificial cells and presents the state-of-the-art applications, including signal transmission between biological and artificial cells. This example is showcasing the possibility for creating bioelectronic interfaces and integrating artificial circuits in biological systems. Prospectives and challenges of the modern technology toward low-power, high-information-density circuits are highlighted.

A high linearity and multilevel polymer-based conductive-bridging memristor for artificial synapses

Conductive-bridging memristors based on a metal ion redox mechanism have good application potential in future neuromorphic computing nanodevices owing to their high resistance switch ratio, fast operating speed, low power consumption and small size. Conductive-bridging memristor devices rely on the redox reaction of metal ions in the dielectric layer to form metal conductive filaments to control the conductance state. However, the migration of metal ions is uncontrollable by the applied bias, resulting in the random generation of conductive filaments, and the conductance state is difficult to accurately control. Herein, we report an organic polymer carboxylated chitosan-based memristor doped with a small amount of the conductive polymer PEDOT:PSS to improve the polymer ionic conductivity and regulate the redox of metal ions. The resulting device exhibits uniform conductive filaments during device operation, more than 100 and non-volatile conductance states with a ∼1 V range, and linear conductance regulation. Moreover, simulation using handwritten digital datasets shows that the recognition accuracy of the carboxylated chitosan-doped PEDOT:PSS memristor array can reach 93%. This work provides a path to facilitate the performance of metal ion-based memristors in artificial synapses.

Doppler Frequency-Shift Information Processing in WOx -Based Memristive Synapse for Auditory Motion Perception

Auditory motion perception is one crucial capability to decode and discriminate the spatiotemporal information for neuromorphic auditory systems. Doppler frequency-shift feature and interaural time difference (ITD) are two fundamental cues of auditory information processing. In this work, the functions of azimuth detection and velocity detection, as the typical auditory motion perception, are demonstrated in a WO_x -based memristive synapse. The WO_x memristor presents both the volatile mode (M1) and semi-nonvolatile mode (M2), which are capable of implementing the high-pass filtering and processing the spike trains with a relative timing and frequency shift. In particular, the Doppler frequency-shift information processing for velocity detection is emulated in the WO_x memristor based auditory system for the first time, which relies on a scheme of triplet spike-timing-dependent-plasticity in the memristor. These results provide new opportunities for the mimicry of auditory motion perception and enable the auditory sensory system to be applied in future neuromorphic sensing.

Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations

Two-dimensional materials and their heterostructures have thus far been identified as leading candidates for nanoelectronics owing to the near-atom thickness, superior electrostatic control, and adjustable device architecture. These characteristics are indeed advantageous for neuro-inspired computing hardware where precise programming is strongly required. However, its successful demonstration fully utilizing all of the given benefits remains to be further developed. Herein, we present van der Waals (vdW) integrated synaptic transistors with multistacked floating gates, which are reconfigured upon surface oxidation. When compared with a conventional device structure with a single floating gate, our double-floating-gate (DFG) device exhibits better nonvolatile memory performance, including a large memory window (>100 V), high on-off current ratio (∼10⁷), relatively long retention time (>5000 s), and satisfactory cyclic endurance (>500 cycles), all of which can be attributed to its increased charge-storage capacity and spatial redistribution. This facilitates highly effective modulation of trapped charge density with a large dynamic range. Consequently, the DFG transistor exhibits an improved weight update profile in long-term potentiation/depression synaptic behavior for nearly ideal classification accuracies of up to 96.12% (MNIST) and 81.68% (Fashion-MNIST). Our work adds a powerful option to vdW-bonded device structures for highly efficient neuromorphic computing.

A SmNiO3 memristor with artificial synapse function properties and the implementation of Boolean logic circuits

Recently, with the improvement of the requirements for fast and efficient data processing in the era of artificial intelligence, new forms of computing have come into being. Developing memristor devices that can simulate the brain's computing neutral network is particularly important for applications in the field of artificial intelligence. However, there are still some challenges in their biological function simulation and related circuit design. In this work, a memristor based on perovskite rare earth nickelates (RNiO₃) is presented with excellent electrical performance, including three orders of magnitude higher current switching ratio and good repeatability, and can achieve bidirectional conductance regulation like weight modulation in bio-synapse. Furthermore, the synaptic like characteristics of the device have been mimicked successfully, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), classical double pulse spike time-dependent plasticity (classical pair-STDP), triplet spike time-dependent plasticity (triplet-STDP), short-term plasticity (STP), long-term plasticity (LTP), the refractory period phenomenon and learning and forgetting rules. In particular, two synaptic devices and a leaky integrate-and-fire (LIF) neuron device are used to achieve a logic gate circuit to realize "AND", "OR", and "NOT" functions. The device paves the way for the application of high-density circuits in artificial intelligence.

Spike timing-dependent plasticity and memory

Spike timing-dependent plasticity (STDP) is a bidirectional form of synaptic plasticity discovered about 30 years ago and based on the relative timing of pre- and post-synaptic spiking activity with a millisecond precision. STDP is thought to be involved in the formation of memory but the millisecond-precision spike-timing required for STDP is difficult to reconcile with the much slower timescales of behavioral learning. This review therefore aims to expose and discuss recent findings about i) the multiple STDP learning rules at both excitatory and inhibitory synapses in vitro, ii) the contribution of STDP-like synaptic plasticity in the formation of memory in vivo and iii) the implementation of STDP rules in artificial neural networks and memristive devices.

Artificial synapse based on 1,4-diphenylbutadiyne with femtojoule energy consumption

Memristors as electronic artificial synapses have attracted increasing attention in neuromorphic computing. Especially, organic small molecule artificial synapses show great promise for low-energy neuromorphic devices. In this study, the basic functions of biological synapses including paired-pulse facilitation/paired-pulse depression (PPF/PPD), spike rate-dependent plasticity (SRDP) and fast Bienenstock-Cooper-Munro learning rules (BCM) have been successfully simulated in the 1,4-diphenylbutadiyne (DPDA) memristor device. Furthermore, ultra-low energy consumption (∼25 fJ per spike), linear and large conductance changes have been obtained in the small molecule DPDA device. This work makes a great contribution to improve the accuracy, speed and to reduce the energy consumption for neuromorphic computing.

Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb-SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition

The synaptic properties of memristors have been widely studied. However, researchers are still committed to solving various challenges, including the study of highly reliable memristors with comprehensive synaptic functions and memristors that simulate highly complex neurological learning rules. In this work, we report a CeO₂/Nb-SrTiO₃ heterojunction memristor whose conductance could be gradually tuned under both positive and negative pulse trains. Due to the gradual conductance switching behavior and the high switching ratio (10⁵), the CeO₂/Nb-SrTiO₃ heterojunction memristor could dutifully mimic biosynaptic functions, including excitatory/inhibitory postsynaptic current (EPSC/IPSC), paired-pulse facilitation and depression (PPF/PPD), spike amplitude-dependent plasticity (SADP), spike duration-dependent plasticity (SDDP), spike rate-dependent plasticity (SRDP), paired/triplet spiking-time-dependent plasticity (STDP), and Bienenstock-Cooper-Munro (BCM) rules. Moreover, a convolutional neural network based on the memristors is constructed to identify the electrocardiogram (ECG) data sets to realize the diagnosis of diseases with a recognition accuracy of 93%. Besides, the recognition accuracy of the handwriting digit reaches 96%. These studies broaden the research scope of high-level synaptic behavior and lay a foundation for the future full synaptic memristor networks.

Emerging electrolyte-gated transistors for neuromorphic perception

With the rapid development of intelligent robotics, the Internet of Things, and smart sensor technologies, great enthusiasm has been devoted to developing next-generation intelligent systems for the emulation of advanced perception functions of humans. Neuromorphic devices, capable of emulating the learning, memory, analysis, and recognition functions of biological neural systems, offer solutions to intelligently process sensory information. As one of the most important neuromorphic devices, Electrolyte-gated transistors (EGTs) have shown great promise in implementing various vital neural functions and good compatibility with sensors. This review introduces the materials, operating principle, and performances of EGTs, followed by discussing the recent progress of EGTs for synapse and neuron emulation. Integrating EGTs with sensors that faithfully emulate diverse perception functions of humans such as tactile and visual perception is discussed. The challenges of EGTs for further development are given.

Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexity

With increasing computing demands, serial processing in von Neumann architectures built with zeroth-order complexity digital circuits is saturating in computational capacity and power, entailing research into alternative paradigms. Brain-inspired systems built with memristors are attractive owing to their large parallelism, low energy consumption, and high error tolerance. However, most demonstrations have thus far only mimicked primitive lower-order biological complexities using devices with first-order dynamics. Memristors with higher-order complexities are predicted to solve problems that would otherwise require increasingly elaborate circuits, but no generic design rules exist. Here, we present second-order dynamics in halide perovskite memristive diodes (memdiodes) that enable Bienenstock-Cooper-Munro learning rules capturing both timing- and rate-based plasticity. A triplet spike timing-dependent plasticity scheme exploiting ion migration, back diffusion, and modulable Schottky barriers establishes general design rules for realizing higher-order memristors. This higher order enables complex binocular orientation selectivity in neural networks exploiting the intrinsic physics of the devices, without the need for complicated circuitry.

Memristors with Biomaterials for Biorealistic Neuromorphic Applications

Electronic devices with biomaterials have paved a way toward "green electronics" to create a sustainable future. Memristors are drawing growing attention with integrated sensing, memory, and computing for future artificial intelligence applications. Biomaterial is an emerging class of memristive materials (the device is called as biomemristor) for transient and/or biodegradable purpose. Importantly, several unique features such as faithful synaptic behaviors, bimodal switching, and biovoltage operations are observed in biomemristors. Moreover, the biomemristors are suitable for human-related applications due to the inherent biocompatibility of biomaterials and flexibility of the device with ultrathin thickness. These features make the biomemristors promising for biorealistic neuromorphic applications. Herein, the state of the art of biomemristors are comprehensively summarized and systematically discussed with particular attention on their unique biorealistic features. Challenges and prospects toward the further development of biomemristors are also provided and discussed.

Synaptic plasticity in self-powered artificial striate cortex for binocular orientation selectivity

Get in-depth understanding of each part of visual pathway yields insights to conquer the challenges that classic computer vision is facing. Here, we first report the bioinspired striate cortex with binocular and orientation selective receptive field based on the crossbar array of self-powered memristors which is solution-processed monolithic all-perovskite system with each cross-point containing one CsFAPbI₃ solar cell directly stacking on the CsPbBr₂I memristor. The plasticity of self-powered memristor can be modulated by optical stimuli following triplet-STDP rules. Furthermore, plasticity of 3 × 3 flexible crossbar array of self-powered memristors has been successfully modulated based on generalized BCM learning rule for optical-encoded pattern recognition. Finally, we implemented artificial striate cortex with binocularity and orientation selectivity based on two simulated 9 × 9 self-powered memristors networks. The emulation of striate cortex with binocular and orientation selectivity will facilitate the brisk edge and corner detection for machine vision in the future applications.

Designing efficient bio-inspired vision systems remains a challenge. Here, the authors report a bio-inspired striate visual cortex with binocular and orientation selective receptive field based on self-powered memristor to enable machine vision with brisk edge and corner detection in the future applications.

Real-time numerical system convertor via two-dimensional WS2-based memristive device

The intriguing properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) enable the exploration of new electronic device architectures, particularly the emerging memristive devices for in-memory computing applications. Implementation of arithmetic logic operations taking advantage of the non-linear characteristics of memristor can significantly improve the energy efficiency and simplify the complexity of peripheral circuits. Herein, we demonstrate an arithmetic logic unit function using a lateral volatile memristor based on layered 2D tungsten disulfide (WS₂) materials and some combinational logic circuits. Removable oxygen ions were introduced into WS₂ materials through oxygen plasma treatment process. The resistive switching of the memristive device caused by the thermophoresis-assisted oxygen ions migration has also been revealed. Based on the characteristics of excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and spike rate dependent plasticity (SRDP), a real-time numerical system convertor was successfully accomplished, which is a significant computing function of arithmetic logic unit. This work paves a new way for developing 2D memristive devices for future arithmetic logic applications.

Neuromorphic device based on silicon nanosheets

Silicon is vital for its high abundance, vast production, and perfect compatibility with the well-established CMOS processing industry. Recently, artificially stacked layered 2D structures have gained tremendous attention via fine-tuning properties for electronic devices. This article presents neuromorphic devices based on silicon nanosheets that are chemically exfoliated and surface-modified, enabling self-assembly into hierarchical stacking structures. The device functionality can be switched between a unipolar memristor and a feasibly reset-able synaptic device. The memory function of the device is based on the charge storage in the partially oxidized SiNS stacks followed by the discharge activated by the electric field at the Au-Si Schottky interface, as verified in both experimental and theoretical means. This work further inspired elegant neuromorphic computation models for digit recognition and noise filtration. Ultimately, it brings silicon - the most established semiconductor - back to the forefront for next-generation computations.

Perspective on Nanofluidic Memristors: from Mechanism to Application

Nanofluidic memristors are memory resistors based on nanoconfined fluidic systems exhibiting history-dependent ion conductivity. Toward establishing powerful computing systems beyond the Harvard architecture, these ion-based neuromorphic devices attracted enormous research attention owing to the unique characteristics of ion-based conductors. However, the design of nanofluidic memristor is still at a primary state and a systematic guidance on the rational design of nanofluidic system is desperately required for the development of nanofluidic-based neuromorphic devices. Herein, we proposed a systematic review on the history, main mechanism and potential application of nanofluidic memristors in order to give a prospective view on the design principle of memristors based on nanofluidic systems. Furthermore, based on the present status of these devices, some fundamental challenges for this promising area were further discussed to show the possible application of these ion-based devices.

Ionic liquid multistate resistive switching characteristics in two terminal soft and flexible discrete channels for neuromorphic computing

By exploiting ion transport phenomena in a soft and flexible discrete channel, liquid material conductance can be controlled by using an electrical input signal, which results in analog neuromorphic behavior. This paper proposes an ionic liquid (IL) multistate resistive switching device capable of mimicking synapse analog behavior by using IL BMIM FeCL₄ and H₂O into the two ends of a discrete polydimethylsiloxane (PDMS) channel. The spike rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP) behavior are highly stable by modulating the input signal. Furthermore, the discrete channel device presents highly durable performance under mechanical bending and stretching. Using the obtained parameters from the proposed ionic liquid-based synaptic device, convolutional neural network simulation runs to an image recognition task, reaching an accuracy of 84%. The bending test of a device opens a new gateway for the future of soft and flexible brain-inspired neuromorphic computing systems for various shaped artificial intelligence applications.

Memristive LIF Spiking Neuron Model and Its Application in Morse Code

The leaky integrate-and-fire (LIF) spiking model can successively mimic the firing patterns and information propagation of a biological neuron. It has been applied in neural networks, cognitive computing, and brain-inspired computing. Due to the resistance variability and the natural storage capacity of the memristor, the LIF spiking model with a memristor (MLIF) is presented in this article to simulate the function and working mode of neurons in biological systems. First, the comparison between the MLIF spiking model and the LIF spiking model is conducted. Second, it is experimentally shown that a single memristor could mimic the function of the integration and filtering of the dendrite and emulate the function of the integration and firing of the soma. Finally, the feasibility of the proposed MLIF spiking model is verified by the generation and recognition of Morse code. The experimental results indicate that the presented MLIF model efficiently performs good biological frequency adaptation, high firing frequency, and rich spiking patterns. A memristor can be used as the dendrite and the soma, and the MLIF spiking model can emulate the axon. The constructed single neuron can efficiently complete the generation and propagation of firing patterns.

A Hebbian Approach to Non-Spatial Prelinguistic Reasoning

This research integrates key concepts of Computational Neuroscience, including the Bienestock-CooperMunro (BCM) rule, Spike Timing-Dependent Plasticity Rules (STDP), and the Temporal Difference Learning algorithm, with an important structure of Deep Learning (Convolutional Networks) to create an architecture with the potential of replicating observations of some cognitive experiments (particularly, those that provided some basis for sequential reasoning) while sharing the advantages already achieved by the previous proposals. In particular, we present Ring Model B, which is capable of associating visual with auditory stimulus, performing sequential predictions, and predicting reward from experience. Despite its simplicity, we considered such abilities to be a first step towards the formulation of more general models of prelinguistic reasoning.

Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision

Exploration of optoelectronic memristors with the capability to combine sensing and processing functions is required to promote development of efficient neuromorphic vision. In this work, the authors develop a plasmonic optoelectronic memristor that relies on the effects of localized surface plasmon resonance (LSPR) and optical excitation in an Ag-TiO2 nanocomposite film. Fully light-induced synaptic plasticity (e.g., potentiation and depression) under visible and ultraviolet light stimulations is demonstrated, which enables the functional combination of visual sensing and low-level image pre-processing (including contrast enhancement and noise reduction) in a single device. Furthermore, the light-gated and electrically-driven synaptic plasticity can be performed in the same device, in which the spike-timing-dependent plasticity (STDP) learning functions can be reversibly modulated by visible and ultraviolet light illuminations. Thereby, the high-level image processing function, i.e., image recognition, can also be performed in this memristor, whose recognition rate and accuracy are obviously enhanced as a result of image pre-processing and light-gated STDP enhancement. Experimental analysis shows that the memristive switching mechanism under optical stimulation can be attributed to the oxidation/reduction of Ag nanoparticles due to the effects of LSPR and optical excitation. The authors' work proposes a new type of plasmonic optoelectronic memristor with fully light-modulated capability that may promote the future development of efficient neuromorphic vision.