Spatially resolved steady-state negative capacitance

Parallel Regulation of Charge Dynamics on Bipolar Ferroelectric Surfaces Breaks the Limits for Water Splitting Efficiency

Ferroelectric materials, known for their non-inversion symmetry, show promise as photocatalysts due to their unique asymmetric charge separation, which separates hydrogen and oxygen evolution sites. However, the strong depolarized field induces a relaxed surface structure, which in turn directly leads to slow hole charge transfer dynamics, hindering their efficiency in water splitting. In this study, a fundamental breakthrough in dramatically enhancing the overall water-splitting activity is presented, through the synergistically regulating of the surface behaviors of photogenerated carriers, resulting in nearly perfect parallel dynamics and balanced amounts. By depositing atomic layers of TiO2 onto the surface of PbTiO3, surface vacancies are effectively passivated, significantly prolonging the hole lifetime from 10-6 to 10-3 s. Spatially resolved transient photovoltage spectroscopy showed that improved hole dynamics led to a 180° phase shift between photogenerated electrons and holes, indicating nearly identical extraction dynamics. Notably, hole and electron concentrations increased to equivalent levels. This leads to a nearly 578-fold increment in the apparent quantum yield, resulting in significantly increased overall water-splitting rates, with a quantum yield of 5.78% at 365 nm. The strategy is also effective with Al2O3 and SiO2, demonstrating its versatility across varied materials, providing a valuable method for creating high-performance ferroelectric photocatalysts.

Van der Waals Ferroelectric CuCrP2S6-Enabled Hysteresis-Free Negative Capacitance Field-Effect Transistors

The relentless pursuit of miniaturization and reduced power consumption in information technology demands innovative device architectures. Negative capacitance field-effect transistors (NC-FETs) offer a promising solution by harnessing the negative capacitance effect of ferroelectric materials to amplify gate voltage and achieve steep subthreshold swings (SS). In this work, 2D van der Waals (vdW) ferroelectric CuCrP2S6 (CCPS) is employed as the gate dielectric to realize hysteresis-free NC-FETs technology. Scanning microwave impedance microscopy (sMIM) is employed to investigate the dielectric property of CCPS, revealing a thickness-independent dielectric constant of ≈35. Subsequently, NC-FETs are fabricated with MoS2 channel, and the capacitance matching conditions are meticulously investigated. The optimized devices exhibit simultaneously ultra-steep SS (≈12 mV dec-1) and negligible hysteresis, with immunity to both voltage scan range and scan rate. Finally, a resistor-loaded inverter is demonstrated manifesting a low operation voltage down to 0.2 V and hysteresis-free transfer characteristics. This work paves the way for the development of high-performance, low-power electronics by exploiting 2D vdW ferroelectric materials.

Ferroelectric topologies in BaTiO3 nanomembranes for light field manipulation

Ferroelectric topological textures in oxides exhibit exotic dipole-moment configurations that would be ideal for nonlinear spatial light field manipulation. However, conventional ferroelectric polar topologies are spatially confined to the nanoscale, resulting in a substantial size mismatch with laser modes. Here we report a dome-shaped ferroelectric topology with micrometre-scale lateral dimensions using nanometre-thick freestanding BaTiO3 membranes and demonstrate its feasibility for spatial light field manipulation. The dome-shaped topology results from a radial flexoelectric field created through anisotropic lattice distortion, which, in turn, generates centre-convergent microdomains. The interaction between the continuous curling of dipoles and light promotes the conversion of circularly polarized waves into vortex light fields through nonlinear spin-to-orbit angular momentum conversion. Further dynamic manipulation of vortex light fields can also be achieved by thermal and electrical switching of the polar topology. Our work highlights the potential for other ferroelectric polar topologies in light field manipulation.

Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures

Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials. The topics covered include the basic synthesis methods for ferroelectric oxide thin films, membranes, and heterostructures, characterization of their properties, and various emergent phenomena hosted by the heterostructures, including the polarization-controlled metal-insulator transition and magnetic anisotropy, negative capacitance effect, domain-imposed one-dimensional graphene superlattices, programmable second harmonic generation, and interface-enhanced polar alignment and piezoelectric response, as well as their applications in nonvolatile memory, logic, and reconfigurable optical devices. Possible future research directions are also outlined, encompassing the synthesis via remote epitaxy and oxide moiré engineering, incorporation of binary ferroelectric oxides, realization of topological properties, and functional design of oxygen octahedral rotation.

Observation of multi-order polar radial vortices and their topological transition

Topological states have garnered enormous interest in both magnetic and ferroelectric materials for promising candidates of next-generation information carriers. Especially, multi-order topological structures with modulative topological charges are promising for multi-state storage. Here, by engineering boundary conditions, we directly observe the self-assembly two-order ferroelectric radial vortices in high-density BiFeO3 nanostructures. The as-observed two-order radial vortex features a doughnut-like out-of-plane polarization distribution and four-quadrant in-plane distribution, with the topological charge of Q = 0. Systematic dimensional control of the BiFeO3 nanostructures reveals size-dependent stabilization of distinct topological states, from elementary one-order to complex three-order radial vortices, which is further rationalized by phase-field simulations. The transition between different topological states with various topological charges is also realized under an external electric field. This study opens up an avenue for generating configurable polar topological states, offering potential advancements in designing high-performance multi-state memory devices.

Continuously Tuning Negative Capacitance via Field-Driven Polar Skyrmions in Ferroelectric Trilayer Wrinkled Films

Polar topological structures have emerged as a frontier in research due to their significant potential in nanoscale electronic devices. The periodic and ordered arrangement, as well as the dynamic control mechanisms, are essential for their practical applications. Here, we present theoretical phase-field simulations that reveal the periodic and ordered arrangement of skyrmions and in-plane vortices within (SrTiO3)10/(PbTiO3)10/(SrTiO3)10 checkerboard-patterned wrinkled trilayer films. Each skyrmion wall exhibits a stable negative capacitance that significantly enhances the effective dielectric permittivity. The negative capacitance results from polarization reversal at the domain walls under small electric field perturbations, closely linked to the depolarization field. The direction of the external electric field can determine the location of the negative capacitance region, which is not strictly confined to the original domain walls but exhibits a shift. These topologically protected structures undergo reversible phase transitions from skyrmion and vortex states to a uniform ferroelectric state under the influence of electric fields and strain, accompanied by highly tunable permittivity. This interplay between topological structures and dielectric characteristics in flexible ferroelectric films offers the opportunity to simultaneously manipulate both topological and dielectric properties through external stimuli, thereby broadening the design possibilities for flexible electronic materials.

Unveiling charge utilization mechanisms in ferroelectric for water splitting

Charge separation is a critical process for achieving high photocatalytic efficiency, and ferroelectrics hold significant potential for facilitating effective charge separation. However, few studies have demonstrated substantial photocatalytic activity in these materials. In this study, we demonstrate that in ferroelectric PbTiO3, surface Ti vacancy defects near the positively polarized facets impede photocatalytic performance by trapping electrons and inducing their recombination. To tackle this issue, we selectively grew SrTiO3 nanolayers on the polarized facets PbTiO3, effectively mitigating interface Ti defects. This modification establishes a efficient electron transfer pathway at the interface between the positively polarized facets and the cocatalyst, extending the electron lifetime from 50 microseconds to the millisecond scale and significantly increasing electron participation in water-splitting reactions. Consequently, the apparent quantum yield for overall water splitting achieves the highest values reported to date for ferroelectric photocatalytic materials. This work provides an effective strategy for designing advanced ferroelectric photocatalytic systems.

Inverse Size-Scaling Ferroelectricity in Centrosymmetric Insulating Perovskite Oxide DyScO3

The breaking of inversion symmetry dictates the emergence of electric polarization, whose topological states in superlattices and bulks have received tremendous attention for their intriguing physics brought for novel device design. However, as for substrate oxides such as LaAlO3, KTaO3, RScO3 (R = rare earth element), their centrosymmetric trivial attributes make their functionality poorly explored. Here, the discovery of nanoscale thickness gradient-induced nonpolar-to-polar phase transition in band insulator DyScO3 is reported by using atomic resolution transmission electron microscopy. As the free-standing specimen reduces to a critical thickness ≈5 nm, its inversion symmetry is spontaneously broken by surface charge transfer, which gives rise to asymmetric Dy atomic displacements and ferrodistortive octahedral order, as substantiated by the first-principles calculations. Apart from the observation of migratable polar vortex structures, the switchable electric polarization by applied electric field is demonstrated by the piezoresponse force microscopy experiments. Given the decisive role of critical size in generating ferroelectricity, a concept of "inverse size-scaling ferroelectric" is proposed to define a class of such materials. Distinct from the proper and improper ferroelectrics, the findings offer a new platform to explore novel low-dimensional ferroelectrics and device applications in the future.

Origin of Chiral Phase Transition of Polar Vortex in Ferroelectric/Dielectric Superlattices

Chiral vortices and their phase transition in ferroelectric/dielectric heterostructures have drawn significant attention in the field of condensed matter. However, the dynamical origin of the chiral phase transition from achiral to chiral polar vortices has remained elusive. Here, we develop a phase-field perturbation model and discover the softening of out-of-plane vibration mode of polar vortices in [(PbTiO3)m/(SrTiO3)m]n superlattices at a critical epitaxial strain or temperature. The softening of the mode leads to the appearance of the axial polarization at vortex cores, resulting in chiral phase transition. It is found that the local negative permittivity plays a crucial role in the enhanced oscillation of axial polarization near the phase transition. Our findings not only reveal the origin of the chiral phase transition of polar vortices but also provide considerable new insight into the dynamics of topological structures and topological phase transitions in ferroelectric systems.

Polar Vortices in Relaxor Ferroelectric Ceramics for High-Efficiency Capacitive Energy Storage

Polar vortices are predominantly observed within the confined ferroelectric films and the ferroelectric/paraelectric superlattices. This raises the intriguing question of whether polar vortices can form within relaxor ferroelectric ceramics and subsequently contribute to their energy storage performances. Here, we incorporate 10 mol % CaSnO3 into the 0.7NaNbO3-0.3Sr0.7Bi0.2TiO3 matrix, yielding a coexistence of phases: 48.8% orthorhombic P21/ma, 49.1% tetragonal P4bm, and 2.1% tetragonal P42/mnm SnO2, which is confirmed by the combination of X-ray diffraction and transmission electron microscopy. The ceramic features a pronounced core-shell structure with the shell region rich in stripe nanoscale domains of the P21/ma phase and the core region consisting of polar nanoregions deficient in the P21/ma phase, forming polar vortices. Consequently, the ceramic achieves an impressive recoverable energy storage density of 6.83 J cm-3 and an exceptional efficiency of 95.7% at a high breakdown strength of 750 kV cm-1, along with superior stability in frequency, temperature, and cycling. These results not only offer a viable approach for developing high-performance energy storage ceramics through the controlled formation of polar vortices but also offer the potential for direct electric-field control of polar vortices for high-speed data processing and storage.

Anisotropic Ferroelectricity in Polar Vortices

The exotic polarization configurations of topologically protected dipolar textures have opened new avenues for realizing novel phenomena absent in traditional ferroelectric systems. While multiple recent studies have revealed a diverse array of emergent properties in such polar topologies, the details of their atomic and mesoscale structures remain incomplete. Through atomic- and meso-scale imaging techniques, the emergence of a macroscopic ferroelectric polarization along both principal axes of the vortex lattice while performing phase-field modeling to probe the atomic scale origins of these distinct polarization components is demonstrated. Additionally, due to the anisotropic epitaxial strain, the polarization switching behavior perpendicular and parallel to the vortices is highly anisotropic, with switching along the vortex axes occurring over numerous decades in field-pulse width. This slow switching process allows for the deterministic control of the polarization state, enabling a non-volatile, multi-state memory with excellent distinguishability and long retention times.

Topological Spin Textures: Basic Physics and Devices

In the face of escalating modern data storage demands and the constraints of Moore's Law, exploring spintronic solutions, particularly the devices based on magnetic skyrmions, has emerged as a promising frontier in scientific research. Since the first experimental observation of skyrmions, topological spin textures have been extensively studied for their great potential as efficient information carriers in spintronic devices. However, significant challenges have emerged alongside this progress. This review aims to synthesize recent advances in skyrmion research while addressing the major issues encountered in the field. Additionally, current research on promising topological spin structures in addition to skyrmions is summarized. Beyond 2D structures, exploration also extends to 1D magnetic solitons and 3D spin textures. In addition, a diverse array of emerging magnetic materials is introduced, including antiferromagnets and 2D van der Waals magnets, broadening the scope of potential materials hosting topological spin textures. Through a systematic examination of magnetic principles, topological categorization, and the dynamics of spin textures, a comprehensive overview of experimental and theoretical advances in the research of topological magnetism is provided. Finally, both conventional and unconventional applications are summarized based on spin textures proposed thus far. This review provides an outlook on future development in applied spintronics.

Polar vortex hidden in twisted bilayers of paraelectric SrTiO3

Polar topologies, such as vortex and skyrmion, have attracted significant interest due to their unique physical properties and promising applications in high-density memory devices. To date, all known polar vortices are present in or induced by ferroelectric materials. In this study, we find polar vortex arrays in paraelectric SrTiO3. Using multislice electron ptychography, the evolution of vorticity along the vortex axis is revealed in twisted bilayers of SrTiO3 with deep-sub-angstrom resolution and one picometer accuracy. The surprising finding of polar vortices in a paraelectric crystal opens up opportunities for polarization physics and corresponding new devices.

Quantifying the polar skyrmion motion barrier in an oxide heterostructure

Exotic polar topologies such as polar skyrmions have been widely observed in ferroelectric superlattice systems. The dynamic motion of polar skyrmions under external forces holds promise for applications in advanced electronic devices such as race-track memory. Meanwhile, the polar skyrmion motion has proven to be challenging due to the strong skyrmion-skyrmion interaction and a lack of a mechanism similar to the spin-transfer torque. In this study, we have developed a nudged elastic band (NEB) method to quantify the polar skyrmion motion barrier along a specific trajectory. It is indicated that the skyrmion motion barrier can be significantly reduced with the reduction of the periodicity to 8 uc, due to the large reduction of the skyrmion size. Moreover, this barrier can also be greatly reduced with a small external electric potential. Following the analysis, we further performed phase-field simulation to verify the collective motion of the polar skyrmion. We have demonstrated the collective skyrmion motion by applying a 5 μN mechanical force using a blade-shaped indenter with a periodicity of 8 unit cells, under an external applied voltage of 1.5 V. This study further paves the way for the design of polar skyrmion-based electronic devices.

Dynamics of Ferroelectric Flux Closure Array in Oxide Superlattices

Topological polar soliton such as skyrmions, merons, vortices, flux closures represent topologically nontrivial structures with their stability governed by specific boundary conditions. These polar solitons can be utilized in enhancing memory density and reducing energy consumption in nanoelectronic devices. Flux closure domains exhibit high density and thermal stability, with a strain gradient as large as ≈106 m-1 at the core, which is tunable by adjusting the materials thickness, periodicity. The practical utilization of topological structures like flux closure in advanced applications requires the ability to manipulate them using external stimuli and ensuring their stability under thermal excitation. In this study, piezo-force microscopy is employed to investigate the manipulation of flux closure nano-domains through external electric field and temperature to observe their evolution. The findings demonstrate that the application of electric field can create or annihilate these nano-domains and modify their density. Temperature variations significantly affect the density of flux closure domains, domain walls, correlating with enhanced capacitance of the system. This is crucial for improving the memory density of storage devices. Thus, by adjusting the density of these domains, it is possible to tailor the functional properties of nanoelectronic devices, such as capacitance and electromechanical response, enabling advanced application.

Highly Responsive Polar Vortices in All-Ferroelectric Heterostructures

The discovery of polar vortices and skyrmions in ferroelectric-dielectric superlattices [such as (PbTiO3)n/(SrTiO3)n] has ushered in an era of novel dipolar topologies and corresponding emergent phenomena. The key to creating such emergent features has generally been considered to be related to counterpoising strongly polar and non-polar materials thus creating the appropriate boundary conditions. This limits the utility these materials can have, however, by rendering (effectively) half of the structure unresponsive to applied stimuli. Here, using advanced thin-film deposition and an array of characterization and simulation approaches, polar vortices are realized in all-ferroelectric trilayers, multilayers, and superlattices built from the fundamental building block of (PbTiO3)n/(PbxSr1- xTiO3)n wherein in-plane ferroelectric polarization in the PbxSr1- xTiO3 provides the appropriate boundary conditions. These superlattices exhibit substantially enhanced electromechanical and ferroelectric responses in the out-of-plane direction that arise from the ability of the polarization in both layers to rotate to the out-of-plane direction under field. In the in-plane direction, the layers are found to be strongly coupled during switching and when heterostructured with ferroelectric-dielectric building blocks, it is possible to produce multistate switching. This approach expands the realm of systems supporting emergent dipolar texture formation and does so with entirely ferroelectric materials thus greatly improving their responses.

Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon

A fascinating aspect of nanoscale ferroelectric materials is the emergence of topological polar textures, which include various complex and stable polarization configurations. The manipulation of such topological textures through external stimuli like electric fields holds promise for advanced nanoelectronics applications. There are, however, several challenges to reach potential applications, among which reliably creating and controlling these textures at the nanoscale on silicon, and with lead-free compounds. We report the realization of epitaxial BaTiO3 nanoislands on silicon, with a lateral size as small as 30-60 nm, and demonstrate stable center down-convergent polarization domains that can be reversibly switched by an electric field to center up-divergent domains. Piezoresponse force microscopy data reconstruction and phase field modeling give insight into the 3D patterns. The trapezoidal-shape nanoislands give rise to center down-convergent lateral swirling polarization component with respect to the nanoisland axis, which prevents the formation of bound charges on the side walls, therefore minimizing depolarization fields. The texture resembles a swirling vortex of liquid flowing into a narrowing funnel. Chirality emerges from the whirling polarization configurations. The ability to create and electrically manipulate chiral whirling polar textures in BaTiO3 nanostructures grown monolithically on silicon holds promise for applications in future topological nanoelectronics.

Electric Field-Manipulated Optical Chirality in Ferroelectric Vortex Domains

Manipulating optical chirality via electric fields has garnered considerable attention in the realm of both fundamental physics and practical applications. Chiral ferroelectrics, characterized by their inherent optical chirality and switchable spontaneous polarization, are emerging as a promising platform for electronic-photonic integrated circuits applications. Unlike organics with chiral carbon centers, integrating chirality into technologically mature inorganic ferroelectrics has posed a long-standing challenge. Here, the successful introduction of chirality is reported into self-assembly La-doped BiFeO3 nanoislands, which exhibit ferroelectric vortex domains. By employing synergistic experimental techniques with piezoresponse force microscopy and nonlinear optical second-harmonic generation probes, a clear correlation between chirality and polarization configuration within these ferroelectric nanoislands is established. Furthermore, the deterministic control of ferroelectric vortex domains and chirality is demonstrated by applying electric fields, enabling reversible and nonvolatile generation and elimination of optically chiral signals. These findings significantly expand the repertoire of field-controllable chiral systems and lay the groundwork for the development of innovative ferroelectric optoelectronic devices.

Mimicking Antiferroelectrics with Ferroelectric Superlattices

Antiferroelectric oxides are promising materials for applications in high-density energy storage, solid-state cooling, and negative capacitance devices. However, the range of oxide antiferroelectrics available today is rather limited. In this work, it is demonstrated that antiferroelectric properties can be electrostatically engineered in artificially layered ferroelectric superlattices. Using a combination of synchrotron X-ray nanodiffraction, scanning transmission electron microscopy, macroscopic electrical measurements, and lateral and vertical piezoresponse force microscopy in parallel-plate capacitor geometry, a highly reversible field-induced transition is observed from a stable in-plane polarized state to a state with in-plane and out-of-plane polarized nanodomains that mimics, at the domain level, the nonpolar to polar transition of traditional antiferroelectrics, with corresponding polarization-voltage double hysteresis and comparable energy storage capacity. Furthermore, it is found that such superlattices exhibit large out-of-plane dielectric responses without involving flux-closure domain dynamics. These results demonstrate that electrostatic and strain engineering in artificially layered materials offers a promising route for the creation of synthetic antiferroelectrics.

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub-60 mV dec-1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in-depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain-induced barrier lowering, negative differential resistance, single-domain state, and multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high-performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.

Organic-Inorganic Hybrid Perovskite Ferroelectric Nanosheets Synthesized by a Room-Temperature Antisolvent Method

Over the past years, the application potential of ferroelectric nanomaterials with unique physical properties for modern electronics is highlighted to a large extent. However, it is relatively challenging to fabricate inorganic ferroelectric nanomaterials, which is a process depending on a vacuum atmosphere at high temperatures. As significant complements to inorganic ferroelectric nanomaterials, the nanomaterials of molecular ferroelectrics are rarely reported. Here a low-cost room-temperature antisolvent method is used to synthesize free-standing 2D organic-inorganic hybrid perovskite (OIHP) ferroelectric nanosheets (NSs), that is, (CHA)2PbBr4 NSs (CHA = cyclohexylammonium), with an average lateral size of 357.59 nm and a thickness ranging from 10 to 70 nm. This method shows high repeatability and produces NSs with excellent crystallinity. Moreover, ferroelectric domains in single NSs can be clearly visualized and manipulated using piezoresponse force microscopy (PFM). The domain switching and PFM-switching spectroscopy indicate the robust in-plane ferroelectricity of the NSs. This work not only introduces a feasible, low-cost, and scalable method for preparing molecular ferroelectric NSs but also promotes the research on molecular ferroelectric nanomaterials.

Ferroelectric Order Evolution in Freestanding PbTiO3 Films Monitored by Optical Second Harmonic Generation

The demand for low-dimensional ferroelectric devices is steadily increasing, however, the thick substrates in epitaxial films impede further size miniaturization. Freestanding films offer a potential solution by eliminating substrate constraints. Nevertheless, it remains an ongoing challenge to improve the stability in thin and fragile freestanding films under strain and temperature. In this work, the structure and ferroelectric order of freestanding PbTiO3 (PTO) films are investigated under continuous variation of the strain and temperature using nondestructive optical second harmonic generation (SHG) technique. The findings reveal that there are both out-of-plane and in-plane domains with polarization along out-of-plane and in-plane directions in the orthorhombic-like freestanding PTO films, respectively. In contrast, only out-of-plane domains are observed in the tetragonal epitaxial PTO films. Remarkably, the ferroelectricity of freestanding PTO films is strengthened under small uniaxial tensile strain from 0% up to 1.66% and well-maintained under larger biaxial tensile strain up to 2.76% along the [100] direction and up to 4.46% along the [010] direction. Moreover, a high Curie temperature of 630 K is identified in 50 nm thick freestanding PTO films by wide-temperature-range SHG. These findings provide valuable understanding for the development of the next-generation electronic nanodevices with flexibility and thermostability.

Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides

At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D ∼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.

Non-volatile magnon transport in a single domain multiferroic

Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO3 the coupling between antiferromagnetic and polar order imposes yet another boundary condition on spin transport. Thus, understanding the fundamentals of spin transport in such systems requires a single domain, a single crystal. We show that through Lanthanum (La) substitution, a single ferroelectric domain can be engineered with a stable, single-variant spin cycloid, controllable by an electric field. The spin transport in such a single domain displays a strong anisotropy, arising from the underlying spin cycloid lattice. Our work shows a pathway to understanding the fundamental origins of magnon transport in such a single domain multiferroic.

Four dimensional-scanning transmission electron microscopy study on relationship between crystallographic orientation and spontaneous polarization in epitaxial BiFeO3

Spontaneous polarization and crystallographic orientations within ferroelectric domains are investigated using an epitaxially grown BiFeO3 thin film under bi-axial tensile strain. Four dimensional-scanning transmission electron microscopy (4D-STEM) and atomic resolution STEM techniques revealed that the tensile strain applied is not enough to cause breakdown of equilibrium BiFeO3 symmetry (rhombohedral with space group: R3c). 4D-STEM data exhibit two types of BiFeO3 ferroelectric domains: one with projected polarization vector possessing out-of-plane component only, and the other with that consisting of both in-plane and out-of-plane components. For domains with only out-of-plane polarization, convergent beam electron diffraction (CBED) patterns exhibit "extra" Bragg's reflections (compared to CBED of cubic-perovskite) that indicate rhombohedral symmetry. In addition, beam damage effects on ferroelectric property measurements were investigated by systematically changing electron energy from 60 to 300 keV.

Atomic-Scale Tracking Topological Phase Transition Dynamics of Polar Vortex-Antivortex Pairs

Non-trivial topological structures, such as vortex-antivortex (V-AV) pairs, have garnered significant attention in the field of condensed matter physics. However, the detailed topological phase transition dynamics of V-AV pairs, encompassing behaviors like self-annihilation, motion, and dissociation, have remained elusive in real space. Here, polar V-AV pairs are employed as a model system, and their transition pathways are tracked with atomic-scale resolution, facilitated by in situ (scanning) transmission electron microscopy and phase field simulations. This investigation reveals that polar vortices and antivortices can stably coexist as bound pairs at room temperature, and their polarization decreases with heating. No dissociation behavior is observed between the V-AV phase at room temperature and the paraelectric phase at high temperature. However, the application of electric fields can promote the approach of vortex and antivortex cores, ultimately leading to their annihilation near the interface. Revealing the transition process mediated by polar V-AV pairs at the atomic scale, particularly the role of polar antivortex, provides new insights into understanding the topological phases of matter and their topological phase transitions. Moreover, the detailed exploration of the dynamics of polar V-AV pairs under thermal and electrical fields lays a solid foundation for their potential applications in electronic devices.

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.

Polar Bloch points in strained ferroelectric films

Topological domain structures have drawn great attention as they have potential applications in future electronic devices. As an important concept linking the quantum and classical magnetism, a magnetic Bloch point, predicted in 1960s but not observed directly so far, is a singular point around which magnetization vectors orient to nearly all directions. Here we show polar Bloch points in tensile-strained ultrathin ferroelectric PbTiO3 films, which are alternatively visualized by phase-field simulations and aberration-corrected scanning transmission electron microscopic imaging. The phase-field simulations indicate local steady-state negative capacitance around the Bloch points. The observation of polar Bloch points and their emergent properties consequently implies novel applications in future integrated circuits and low power electronic devices.

Giant energy storage and power density negative capacitance superlattices

Dielectric electrostatic capacitors1, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems2-5. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness2,3,6, leaving an opportunity for electrostatic microcapacitors. Here we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO2-ZrO2-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2-ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect7-12, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm-3) (ref. 13). Second, to increase total energy storage, antiferroelectric superlattice engineering14 scales the energy storage performance beyond the conventional thickness limitations of HfO2-ZrO2-based (anti)ferroelectricity15 (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm-2 and 300 kW cm-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy1,16. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors5, which can unlock substantial energy storage and power delivery performance for electronic microsystems17-19.

Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films

Integrating ferroelectric AlScN with III-N semiconductors to enhance the performance and tunability of nitride devices requires high-quality AlScN films. This work focuses on the effect and regulation mechanism of post-annealing in pure N2 on the crystal quality and ferroelectric properties of AlScN films. It is found that the crystal quality improves with increasing annealing temperatures. Remarkably, the leakage current of AlScN films caused by grain boundaries could be reduced by four orders of magnitude after annealing at 400 °C. The crystal growth dynamics simulations and band structure calculations indicate that the energy supplied by the temperature facilitates the evolution of abnormally oriented grains to have a better c-axis orientation, resulting in the defect states at the Fermi-level disappearing, which is mainly the reason for the leakage current decrease. More interestingly, the reduction of leakage current leads to the previously leaking region exhibiting ferroelectric properties, which is of great significance to improve the ferroelectricity of AlScN and ensure the uniformity of devices. Furthermore, annealing enhances the tensile strain on the film, which flattens the energy landscape of ferroelectric switching and reduces the coercive field. However, the risk of incorporation of oxygen will also be increased if the annealing temperatures are higher than 400 °C, which will not only reduce the relative displacement of metal atoms and nitrogen atoms in AlScN but also enhance the ferroelectric depolarization field, leading to the remnant polarization decreasing dramatically. These discoveries facilitate a deeper understanding of the influencing mechanism on the ferroelectric properties of AlScN films and provide a direction for obtaining high-quality AlScN.

Electrically and mechanically driven rotation of polar spirals in a relaxor ferroelectric polymer

Topology created by quasi-continuous spatial variations of a local polarization direction represents an exotic state of matter, but field-driven manipulation has been hitherto limited to creation and destruction. Here we report that relatively small electric or mechanical fields can drive the non-volatile rotation of polar spirals in discretized microregions of the relaxor ferroelectric polymer poly(vinylidene fluoride-ran-trifluoroethylene). These polar spirals arise from the asymmetric Coulomb interaction between vertically aligned helical polymer chains, and can be rotated in-plane through various angles with robust retention. Given also that our manipulation of topological order can be detected via infrared absorption, our work suggests a new direction for the application of complex materials.

Effect of Aspect Ratio of Ferroelectric Nanofilms on Polarization Vortex Stability under Uniaxial Tension or Compression

Mastering the variations in the stability of a polarization vortex is fundamental for the development of ferroelectric devices based on polarization vortex domain structures. Some phase field simulations were conducted on PbTiO3 nanofilms with an initial polarization vortex under uniaxial tension or compression to investigate the conditions of vortex instability and the effects of aspect ratio of nanofilms and temperature on them. The instability of a polarization vortex is strongly dependent on aspect ratio and temperature. The critical compressive stress increases with decreasing aspect ratio under the action of compressive stress. However, the critical tensile stress first decreases and then increases with decreasing aspect ratio, then continues to decrease. There are two inflection points in the curve. In addition, an elevated temperature makes both the critical tensile and compressive stresses decline, and will also cause the aspect ratio corresponding to the inflection point to decrease. These are very important for the design of promising nano-ferroelectric devices based on polarization vortices to improve their performance while maintaining storage density.

Mapping Polar Distortions using Nanobeam Electron Diffraction and a Cepstral Approach

Measuring local polar ordering is key to understanding ferroelectricity in thin films, especially for systems with small domains or significant disorder. Scanning nanobeam electron diffraction (NBED) provides an effective local probe of lattice parameters, local fields, polarization directions, and charge densities, which can be analyzed using a relatively low beam dose over large fields of view. However, quantitatively extracting the magnitudes and directions of polarization vectors from NBED remains challenging. Here, we use a cepstral approach, similar to a pair distribution function, to determine local polar displacements that drive ferroelectricity from NBED patterns. Because polar distortions generate asymmetry in the diffraction pattern intensity, we can efficiently recover the underlying displacements from the imaginary part of the cepstrum transform. We investigate the limits of this technique using analytical and simulated data and give experimental examples, achieving the order of 1.1 pm precision and mapping of polar displacements with nanometer resolution.

Pure Chiral Polar Vortex Phase in PbTiO3/SrTiO3 Superlattices with Tunable Circular Dichroism

Nontrivial polarization textures have been demonstrated in ferroelectric/dielectric superlattices, where the electrostatic, elastic, and different gradient energies compete in a delicate balance. When PbTiO₃/SrTiO₃ superlattices are grown on DyScO₃, the coexistence of ferroelectric domains and vortex structure is observed for n = 12-20 unit cells. Here, we report an approach to achieve single-phase vortex structures in superlattices by controlling the epitaxial strain using Sr_1.04Al_0.12Ga_0.35Ta_0.50O₃ substrates. The domain width follows Kittel's law with the thickness of the ferroelectric PbTiO₃ layers. A phase transition from vortex to a disordered phase with temperature is characterized by the correlation length. Resonant soft X-ray diffraction circular dichroism at the titanium L-edge reveals enhanced chirality with the thickness of the ferroelectric layer. These results are supported by second-principles simulations, which demonstrate that the integrated helicity increases with n. The stabilization of chiral single-phase polar vortices in ferroelectric/dielectric superlattices can enable novel optoelectronic devices with enhanced ferroelectric-light interaction.

Negative Capacitance in Nanocomposite Based on High-Density Polyethylene (HDPE) with Multiwalled Carbon Nanotubes (CNTs)

Negative capacitance (NC), already observed in conducting polymer-based nanocomposites, was recently reported and evidenced at low frequencies (<10 kHz) in non-conducting polymer-based nanocomposites containing conductive particles. In this contribution, we demonstrate that it is possible to produce economic high-density polyethylene (HDPE) nanocomposites exhibiting an NC effect at low frequencies via a convenient and environmentally friendly extrusion-like process by only adjusting the duration of melt-mixing. Nanocomposite materials are produced by confining a limited quantity, i.e., 4.6 wt.%, of multiwalled carbon nanotubes (CNTs) within semi-crystalline HDPE to reach the percolation threshold. With increasing melt processing time, crystallites of HDPE developing at the surface of CNTs become bigger and perturbate the connections between CNTs leading to a dramatic change in the electrical behavior of the systems. More specifically, the link between NC and current oscillations is stressed while the dependence of NC with the size of polymer crystallites is evidenced. NC tends to appear when space charge effects take place in HDPE/MWCNT interfaces, in structures with convenient crystallite sizes corresponding to 10 min of melt-mixing.

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Topologically protected polar textures have provided a rich playground for the exploration of novel, emergent phenomena. Recent discoveries indicate that ferroelectric vortices and skyrmions not only host properties markedly different from traditional ferroelectrics, but also that these properties can be harnessed for unique memory devices. Using a combination of capacitor-based capacitance measurements and computational models, it is demonstrated that polar vortices in dielectric-ferroelectric-dielectric trilayers exhibit classical ferroelectric bi-stability together with the existence of low-field metastable polarization states. This behavior is directly tied to the in-plane vortex ordering, and it is shown that it can be used as a new method of non-destructive readout-out of the poled state.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Angstrom-scale imaging of magnetization in antiferromagnetic Fe2As via 4D-STEM

We demonstrate a combination of computational tools and experimental 4D-STEM methods to image the local magnetic moment in antiferromagnetic Fe₂As with 6 angstrom spatial resolution. Our techniques utilize magnetic diffraction peaks, common in antiferromagnetic materials, to create imaging modes that directly visualize the magnetic lattice. Using this approach, we show that center-of-mass analysis can determine the local magnetization component in the plane perpendicular to the path of the electron beam. Moreover, we develop Magnstem, a quantum mechanical electron scattering simulation code, to model electron scattering of an angstrom-scale probe from magnetic materials. Using these tools, we identify optimal experimental conditions for separating weak magnetic signals from the much stronger interactions of an angstrom-scale probe with electrostatic potentials. Our techniques should be useful for characterizing the local magnetic order in systems such in thin films, interfaces, and domain boundaries of antiferromagnetic materials, which are difficult to probe with existing methods.

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO3 single-crystal substrates by solution reaction at a low temperature of ~200 oC. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm2, corresponding to the highest photoresponsivity of ~4.306×10-3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films

Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of the tunable negative capacitance effect in ferroelectric KNbO₃ through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effects can be controlled by imposing various epitaxial strains. The adjustment of the negative curvature region in the polarization-energy landscape under different strain states is responsible for the tunable negative capacitance. Our work paves the way for fabricating low-power devices and further reducing energy consumption in electronics.

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures

Negative capacitance (NC) is now an attractive research topic owing to its potential applications. For better integration, investigation about the phenomenon and mechanism of NC in ferroelectric materials on semiconductor substrates is important. In this work, ferroelectric BaTiO3 (BTO) films are deposited on the low-resistance Si(100) substrates to constitute Pt/BTO/p-Si/Pt samples with the metal/ferroelectric/semiconductor/metal (MFSM) structure, on which NC are directly measured at low frequencies with a large DC bias. Because of the unique asymmetric interface, the NC value is tunable by the polarity and magnitude of the DC bias. Analysis based on the impedance and ferroelectric characteristics reveals that, in addition to the displacement current related to the electric polarization, there is also relaxation current caused by interface charge injection and oxygen vacancy migration. This work provides another idea for studying miniaturized and low-energy devices utilizing NC, which is of great significance for the development of silicon-based ferroelectric devices.

Steep-Slope and Hysteresis-Free MoS2 Negative-Capacitance Transistors Using Single HfZrAlO Layer as Gate Dielectric

An effective way to reduce the power consumption of an integrated circuit is to introduce negative capacitance (NC) into the gate stack. Usually, negative-capacitance field-effect transistors (NCFETs) use both a negative-capacitance layer and a positive-capacitance layer as the stack gate, which is not conductive to the scaling down of devices. In this study, a steep-slope and hysteresis-free MoS₂ NCFET is fabricated using a single Hf_0.5-xZr_0.5-xAl_2xO_y (HZAO) layer as the gate dielectric. By incorporating several Al atoms into the Hf_0.5Zr_0.5O₂ (HZO) thin film, negative capacitance and positive capacitance can be achieved simultaneously in the HZAO thin film and good capacitance matching can be achieved. This results in excellent electrical performance of the relevant NCFETs, including a low sub-threshold swing of 22.3 mV/dec over almost four orders of drain-current magnitude, almost hysteresis-free, and a high on/off current ratio of 9.4 × 10⁶. Therefore, using a single HZAO layer as the gate dielectric has significant potential in the fabrication of high-performance and low-power dissipation NCFETs compared to conventional HZO/Al₂O₃ stack gates.

Steep-Slope Transistor with an Imprinted Antiferroelectric Film

The effect of negative capacitance (NC), which can internally boost the voltage applied to a transistor, has been considered to overcome the fundamental Boltzmann limit of a transistor. To stabilize the NC effect, the dielectric (DE) must be integrated into a heterostructure with a ferroelectric (FE) film. However, in a multidomain hafnia, the charge boosting effect is reduced owing to a lowering of the depolarization field originating from the stray field at each domain, and simultaneously, the operating voltage increases owing to the voltage division at the DE. Here, we demonstrate core approaches to the gate stack of energy-efficient device technology using a transient NC. Electrical measurements of the transistor with imprinted antiferroelectric and high C_DE/C_FE structures exhibit low subthreshold slopes below 20 mV/dec, a low voltage operation of 0.5 V, a fast operation of 20 ns, hysteresis-free I_d-V_g, and high endurance characteristics of 10¹² cycles. We expect that this will lead to the rapid implementation of the NC effect in high-speed switching device applications with significantly improved energy efficiency.

Real-Time Transformation of Flux-Closure Domains with Superhigh Thermal Stability

Polar topologies have received extensive attention due to their exotic configurations and functionalities. Understanding their responsive behaviors to external stimuli, especially thermal excitation, is highly desirable to extend their applications to high temperature, which is still unclear. Here, combining in situ transmission electron microscopy and phase-field simulations, the thermal dynamics of the flux-closure domains were illuminated in PbTiO₃/SrTiO₃ multilayers. In-depth analyses suggested that the topological transition processes from a/c domains to flux-closure quadrants were influenced by the boundary conditions of PbTiO₃ layers. The symmetrical boundary condition stabilized the flux-closure domains at higher temperature than in the asymmetrical case. Furthermore, the reversible thermal responsive behaviors of the flux-closure domains displayed superior thermal stability, which maintained robust up to 450 °C (near the Curie temperature). This work provides new insights into the dynamics of polar topologies under thermal excitation and facilitates their applications as nanoelectronics under extreme conditions.

Giant voltage amplification from electrostatically induced incipient ferroelectric states

Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response^1,2. When the ferroelectric is in a heterostructure, this behaviour yields a voltage amplification in the other elements, which experience a potential difference larger than the one applied, holding promise for low-power electronics³. So far research has focused on verifying this effect and little is known about how to optimize it. Here, we describe an electrostatic theory of ferroelectric/dielectric superlattices, convenient model systems^4,5, and show the relationship between the negative permittivity of the ferroelectric layers and the voltage amplification in the dielectric ones. Then, we run simulations of PbTiO₃/SrTiO₃ superlattices to reveal the factors most strongly affecting the amplification. In particular, we find that giant effects (up to tenfold increases) can be obtained when PbTiO₃ is brought close to the so-called 'incipient ferroelectric' state.

Electric-field control of the nucleation and motion of isolated three-fold polar vertices

Recently various topological polar structures have been discovered in oxide thin films. Despite the increasing evidence of their switchability under electrical and/or mechanical fields, the dynamic property of isolated ones, which is usually required for applications such as data storage, is still absent. Here, we show the controlled nucleation and motion of isolated three-fold vertices under an applied electric field. At the PbTiO3/SrRuO3 interface, a two-unit-cell thick SrTiO3 layer provides electrical boundary conditions for the formation of three-fold vertices. Utilizing the SrTiO3 layer and in situ electrical testing system, we find that isolated three-fold vertices can move in a controllable and reversible manner with a velocity up to ~629 nm s-1. Microstructural evolution of the nucleation and propagation of isolated three-fold vertices is further revealed by phase-field simulations. This work demonstrates the ability to electrically manipulate isolated three-fold vertices, shedding light on the dynamic property of isolated topological polar structures.