Numerical analysis of homojunction design for high-efficiency Pb-free perovskite solar cells

Tin-based perovskite solar cells (PSCs) exhibit promising potential as viable alternatives to the prevailing lead-based PSCs, owing to their ideal bandgap and environmentally friendly nature. To address the challenges posed by the thick perovskite films required for narrow bandgap materials, we propose incorporating p-n homojunctions within the active layers. This approach not only enables a charge transport layer (CTL)-free cell structure to reduce manufacturing costs but also enhances the performance of PSCs with CTLs by facilitating efficient charge segregation. We initially emphasize the advantages of CTL-free PSCs and subsequently strive to optimize the performance of homojunction PSCs, encompassing a comprehensive analysis of influential factors such as the absorber layer thickness, doping concentration, defect density, carrier mobility, and electrode contacts. A power conversion efficiency of 19.07% was achieved for the CTL-free homojunction PSCs. Then various charge transport materials were incorporated to further enhance the performance of homojunction PSCs. Ultimately, a champion power conversion efficiency of 25.15% was achieved for the PSCs with CTLs. The present investigation contributes to the advancement of solar cell technology by shedding light on the potential of lead-free PSCs, as well as optimizing their performance for real-world applications.

Perovskite Solar Cells and Light Emitting Diodes: Materials Chemistry, Device Physics and Relationship

Solution-processed perovskite solar cells (PSCs) and perovskite light emitting diodes (PeLEDs) represent promising next-generation optoelectronic technologies. This Review summarizes recent advancements in the application of metal halide perovskite materials for PSC and PeLED devices to address the efficiency, stability and scalability issues. Emphasis is placed on material chemistry strategies used to control and engineer the composition, deposition process, interface and micro-nanostructure in solution-processed perovskite films, leading to high-quality crystalline thin films for optimal device performance. Furthermore, we retrospectively compare the device physics of PSCs and PeLEDs, their working principles and their energy loss mechanisms, examining the similarities and differences between the two types of devices. The reciprocity relationship suggests that a great PSC should also be a great PeLED, motivating the search for interconverting photoelectric bifunctional devices with maximum radiative recombination and negligible non-radiative recombination. Specific requirements of PSCs and PeLEDs in terms of bandgap, thickness, band alignment and charge transport to achieve this target are discussed in detail. Further challenges and issues are also illustrated, together with prospects for future development. Understanding these fundamentals, embracing recent breakthroughs and exploring future prospects pave the way toward the rational design and development of high-performance PSC and PeLED devices.

2D/3D Heterojunction Engineering for Hole Transport Layer-Free Carbon-Based Perovskite Solar Cells

Hole transport layer (HTL)-free carbon-based perovskite solar cells (C-PSCs) own outstanding potential for commercial applications due to their attractive advantages of low cost and superior stability. However, the abundant defects and mismatched energy levels at the interface of the perovskite/carbon electrode severely limit the device efficiency and stability. Constructing a 2D layer on the surface of 3D perovskite films to form 2D/3D heterojunctions has been demonstrated to be an effective method of passivating surface defects and optimizing the energy level alignment in almost all kinds of PSCs. Due to the unique structure of HTL-free C-PSCs, 2D/3D heterojunctions play especially important roles. This review article summarizes the reports of 2D/3D perovskite heterojunctions in HTL-free C-PSCs. It describes the contributions of 2D/3D heterojunctions in terms of their roles in defect passivation, energy level optimization, and stability improvement. Finally, challenges and prospects of 2D/3D heterojunction for further development of HTL-free C-PSCs are highlighted.

Decoding recombination dynamics in perovskite solar cells: an in-depth critical review

The remarkable optoelectronic properties of metal halide perovskites (MHPs) have established them as highly promising photovoltaic absorber materials, propelling the rapid advancement of perovskite solar cells (PSCs) that outperform many traditional alternatives in terms of power conversion efficiency (PCE). However, despite their advancements, PSC devices encounter significant non-radiative recombination losses, encompassing trap-assisted (Shockley-Read-Hall) recombination in bulk and interfaces of PSCs, which restricts their open-circuit voltage (VOC) and overall PCE, dragging it below the Shockley-Queisser (SQ) limit. The ongoing debate regarding the role of grain boundary (GB) recombination, whether it primarily manifests as bulk or surface recombination, has spurred extensive research aimed at elucidating these mechanisms. This review provides a critical comprehensive analysis of the thermodynamic correlations related to VOC losses, bridging the gap between the theoretical SQ limit and practical device performance. Subsequently, it delves into recent findings that aim to decipher the multifaced nature and origin of radiative and non-radiative recombination-induced losses within the device stack, assessing their impacts on overall performance. Furthermore, this review emphasizes the application of advanced machine learning techniques to discern dominant recombination mechanisms in PSCs. Finally, it summarizes the notable advanced strategies to mitigate undesirable non-radiative recombination losses, which pave the way to the thermodynamic efficiency limit.

Assisted Solubilization Strategy in Spiro-OMeTAD for Thermally and Mechanically Stable Perovskite Solar Cells

The ions migration and de-doping reactions caused by conventional doping seriously jeopardizes the thermal stability of perovskite solar cells (PVSCs) based on spiro-OMeTAD as hole transport layer (HTL), which poses a significant challenge for subsequent commercialization. To address these issues, a novel assisted solubilization strategy has been firstly developed using deep eutectic solvent (DES) synthesized from N-(cyanomethyl)acetamide (NCMA) and lithium bis(trifluoromethanesulfonyl)imide (LiTFSI). NCMA can form multiple strong interaction modes with LiTFSI through N-H⋅⋅⋅O hydrogen bonding and Li-O/Li-N coordination, which effectively inhibits Li+ ions migration at high temperature and increases solubility of LiTFSI in chlorobenzene without acetonitrile and 4-tert-butylpyridine (tBP), fundamentally solving de-doping reaction. In addition, the molecular network with abundant functional groups in DES improves fracture energy of perovskite/spiro-OMeTAD interface and enhances interfacial adhesion via strong chelation with perovskite and Ag electrode. Consequently, benefiting from tBP removement and inhibited ions migration, the optimized PVSCs achieve a power conversion efficiency (PCE) of 25.02 %, and the unencapsulated device retains over 90 % of initial PCE at 85 °C, 40 % RH for 1200 h (ISOS-D-2 standard). This innovative assisted solubilization strategy represents a critical step toward improving device stability and accelerating the commercialization of PVSCs.

Hole-selective Transparent In Situ Passivation Contacts for Efficient and Stable n-i-p Graded Perovskite/Silicon Tandem Solar Cells

The optically deficient and intrinsically unstable hole transport layer (HTL) is the Achilles' heel of n-i-p perovskite/silicon tandems. Here, a minimalist transparent hole-selective contact is developed without additional HTL by simply integrating cross-linkable p-type small molecules into antisolvent. This strategy not only improves the perovskite crystallinity, shields the perovskite from external stressors, and suppresses interfacial mass exchange, but also provides efficient defect passivation and favorable band alignment via the formation of graded heterojunction. Consequently, the corresponding 1.65 eV perovskite solar cell achieves a stabilized efficiency of 19.6%, alongside significantly improved thermal, ultraviolet, and operation stabilities. Furthermore, leveraging its outstanding transparency, a bifacial single-junction device is showcased achieving a record bifaciality of 101.4%, and a monolithic perovskite/silicon tandem boasting a certified efficiency of 29.2% for 1.04 cm2, which represents the highest certified efficiency achieved for n-i-p perovskite/silicon tandems. The demonstration of efficient and stable minimalist hole-selective contacts encourages the tandem community to reevaluate the n-i-p structure, with the goal of harnessing the high open-circuit voltage of single-junction n-i-p PSCs.

Constructing bottom-up n-p perovskite homojunctions for enhanced performance of electron transport layer-free solar cells

We constructed the high-quality perovskite films with bottom-up n-p homojunctions via a modified sequential two-step deposition technique, which optimized the energy level alignment between the perovskite layer and the adjacent contacts for promoting charge separation and extraction, as well as suppressing non-radiative recombination. The resultant n-p homojunction-based electron transport layer-free perovskite solar cells achieved improved efficiency, which was ∼13% higher than that of the control counterpart.

Improved Conductivity of 2D Perovskite Capping Layer for Realizing High-Performance 3D/2D Heterostructured Hole Transport Layer-Free Perovskite Photovoltaics

Perovskite solar cells (PSCs) have emerged as low-cost photovoltaic representatives. Constructing three-dimensional (3D)/two-dimensional (2D) perovskite heterostructures has been shown to effectively enhance the efficiency and stability of PSCs. However, further enhancement of device performance is still largely limited by inferior conductivity of the 2D perovskite capping layer and its mismatched energy level with the 3D perovskite layer. Here, we developed an effective surface modification strategy via synergically incorporating inorganic high valence-state niobium ion (Nb5+) metal dopants and organic ammonium halide salts to in situ construct a high-quality 2D perovskite capping layer on top of the underlying 3D perovskite layer. As a result, the conductivity of the 2D perovskite capping layer was effectively enhanced by 43%, the energy barrier between 3D and 2D perovskite layers was favorably reduced, and the built-in electric field of the 3D/2D heterostructured perovskite stacks has been enlarged. In addition, the 2D perovskite capping layer also effectively reduced the defect densities by up to 29%, as verified by the space-charge-limited-current (SCLC) tests. Benefiting from the facilitated charge extraction and suppressed non-radiative recombination, the blade-coated hole transport layer-free PSCs based on this optimized 3D/2D heterostructured perovskite film achieved an efficiency of 23.2%, ∼19% higher than that of the control device (19.5%), which represented one of the best-performing PSCs with simplified device architecture fabricated via a scalable fabrication technique. The modified 3D/2D perovskite-based device also exhibited improved operational stability.

Layer-dependent Schottky contact at TaX2-BY (X = S, Se, Te; Y = P, As, Sb) van der Waals interfaces

The mechanical, thermal and dynamical stabilities, electronic structure, contact type, and height of the barrier at the interface of TaX2 (X = S, Se, Te) and BY (Y = P, As, Sb) metal-semiconductor (MS) contact are investigated via first principles calculations. Binding energies, mechanical properties, phonon spectra and ab initio molecular dynamics (AIMD) simulations confirm the stabilities of these systems. TaX2-BY (X = S, Se, Te; Y = P, As, Sb) MS van der Waals heterostructures (vdWHs) are found to be metal with a Schottky contact at the interface. Formation of the n-type Schottky contact at the interface of TaX2-BY (X = S, Se, Te; Y = P, As, Sb) MS vdWHs favors electron conduction over hole conduction. Small (higher) effective mass (carrier mobility) make TaS2-BSb, TaSe2-BSb and TaTe2-BSb MS vdWHs, potential candidates for high speed nanoelectronic applications. Bader charge analysis shows that at the interface of TaX2-BY (X = S, Se, Te; Y = P, As, Sb) MS vdWHs, in TaX2 (BP, BAs) the electrons transfer from the TaX2 layer to the BP and BAs layer, while in TaX2 (BSb) the electrons transfer from the BSb layer to TaX2 layer.

Surface Sulfurization of Cubic Cu2O to Form Cu2S Nanostructure-Decorated Catalysts for Light-Enhanced Electrocatalytic H2 Evolution and Photocatalytic CO2 Reduction

Developing highly efficient bifunctional catalysts for electrocatalysis and photocatalysis suffers from sluggish charge transfer and poor photo-to-electric conversion rate. Herein, micro-sized Cu2O cubes were initially prepared for subsequent transformation into Cu2O@Cu2S core-shell structures by a slight surface sulfurization. The formation of nanostructured Cu2S thin layer at Cu2O surface can endow an immediate charge separation and migration under light irradiation, leading to high surface photovoltages (SPV, 18-30 mV). As a result, the as-prepared Cu2O@Cu2S catalysts exhibited reduced overpotentials (η, only 86 mV is required for the optimized sample to achieve a current density of 10 mA cm-2) for H2 evolution with good cycling stability in electrocatalytic water splitting. Meanwhile, a high methane (CH4) production rate of 30.3 μmol h-1 g-1 can be delivered from the optimized Cu2O@Cu2S sample when used for photocatalytic CO2 reduction. This work has provided a strategy to prepare bifunctional catalysts with improved photoelectric properties for photo/electrocatalytic applications.

Shallow defects and optical properties of CsPbBr3thin films through noble gas ion beam defect engineering

Ion implantation is widely utilised for the modification of inorganic semiconductors; however, the technique has not been extensively applied to lead halide perovskites. In this report, we demonstrate the modification of the optical properties of caesium lead bromide (CsPbBr3) thin films via noble gas ion implantation. We observed that the photoluminescence (PL) lifetimes of CsPbBr3thin films can be doubled by low fluences (<1 × 1014at·cm-2) of ion implantation with an acceleration voltage of 20 keV. We attribute this phenomenon to ion beam induced shallow minority charge carrier trapping induced by nuclear stopping, dominant by heavy noble gases (Ar, Xe). Simultaneously, the PL quantum yield (PLQY) is altered during noble gas ion implantation inversely correlates with the electronic stopping power of the implanted element, hence Ar implantation reduces the PLQY, while Ne even causes a PLQY enhancement. These results thus provide a guide to separate the effect of nuclear and electronic damage during ion implantation into halide perovskites.

Construction of Cs2AgBiCl6/COF Heterojunction for Boosted Photocatalytic Thioester Oxidation

Lead-free halide perovskites as a new kind of potential candidate for photocatalytic organic synthesis have attracted much attention recently. The rational heterojunction construction is regarded as an efficient strategy to delicately regulate their catalytic performances. Herein, a semi-conductive covalent organic framework (COF) nanosheet, C4N, is employed as the functional component to construct Cs2AgBiCl6/C4N (CABC/C4N) heterojunction. It is found that the C4N nanosheets with rich surface functional groups can serve as heterogeneous nucleation sites to manipulate the growth of CABC nanocrystals and afford close contact between each other, therefore facilitate the transfer and spatial separation of photogenerated charge carriers, as verified by in situ X-ray photoelectronic spectroscopy and Kelvin probe force microscopy. Moreover, the oxygen affinity of C4N endows the heterojunctions with outstanding aerobic reactivity, thus improving the photocatalytic performance largely. The optimal CABC/C4N heterojunction delivers a thioanisole conversion efficiency of 100% after 6 h, which is 2.2 and 7.7-fold of that of CABC and C4N. This work provides a new ideal for the design and application of lead-free perovskite heterojunction photocatalysts for organic reactions.

A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low-dimensional, high-speed, and ultrasensitive devices. Here, a femtosecond electron-based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time-resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state-of-the-art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n-type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband-/defect-assisted radiative recombination in the energy domain result in ordinal super-diffusion, localization, and sub-diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

g-C3N4 as ballistic electron transport "Tunnel" in CsPbBr3-based ternary photocatalyst for gas phase CO2 reduction

Perovskite CsPbBr3 quantum dot shows great potential in artificial photosynthesis, attributed to its outstanding optoelectronic properties. Nevertheless, its photocatalytic activity is hindered by insufficient catalytic active sites and severe charge recombination. In this work, a CsPbBr3@Ag-C3N4 ternary heterojunction photocatalyst is designed and synthesized for high-efficiency CO2 reduction. The CsPbBr3 quantum dots and Ag nanoparticles are chemically anchored on the surface of g-C3N4 sheets, forming an electron transfer tunnel from CsPbBr3 quantum dots to Ag nanoparticles via g-C3N4 sheets. The resulting CsPbBr3@Ag-C3N4 ternary photocatalyst, with spatial separation of photogenerated carriers, achieves a remarkable conversion rate of 19.49 μmol·g-1·h-1 with almost 100 % CO selectivity, a 3.13-fold enhancement in photocatalytic activity as compared to CsPbBr3 quantum dots. Density functional theory calculations reveal the rapid CO2 adsorption/activation and the decreased free energy (0.66 eV) of *COOH formation at the interface of Ag nanoparticles and g-C3N4 in contrast to the g-C3N4, leading to the excellent photocatalytic activity, while the thermodynamically favored CO desorption contributes to the high CO selectivity. This work presents an innovative strategy of constructing perovskite-based photocatalyst by modulating catalyst structure and offers profound insights for efficient CO2 conversion.

Complex Metal Oxides as Emerging Inorganic Hole-Transporting Materials for Perovskite Solar Cells

Perovskite solar cells (PSCs) have achieved revolutionary progress during the past decades with a rapidly boosting rate in power conversion efficiencies from 3.8% to 26.1%. However, high-efficiency PSCs with organic hole-transporting materials (HTMs) suffer from inferior long-term stability and high costs. The replacement of organic HTMs with inorganic counterparts such as metal oxides can solve the above-mentioned problems to realize highly robust and cost-effective PSCs. Nevertheless, the widely used simple metal oxide-based HTMs are limited by the low conductivity and poor light transmittance due to the fixed atomic environment. As an emerging family of inorganic HTMs, complex metal oxides with superior structural/compositional flexibility have attracted rapidly increasing interest recently, showing superior carrier conductivity/mobility and superb light transmittance. Herein, the recent advancements in the design and development of complex metal oxide-based HTMs for high-performance PSCs are summarized by emphasizing the superiority of complex metal oxides as HTMs over simple metal oxide-based counterparts. Consequently, several distinct strategies for the design of complex metal oxide-based HTMs are proposed. Last, the future directions and remaining challenges of inorganic complex metal oxide-based HTMs for PSCs are also presented. This review aims to provide valuable guidelines for the further advancements of robust, high-efficiency, and low-cost PSCs.

Pressure-Modulated Interface Engineering toward Realizing Core@Shell Configuration Transition

The strained interface of core@shell nanocrystals (NCs) can effectively modulate the energy level alignment, thereby significantly affecting the optical properties. Herein, the unique photoluminescence (PL) response of doped Mn ions is introduced as a robust probe to detect the targeted pressure-strain relation of CdS@ZnS NCs. Results show that the core experiences actually less pressure than the applied external pressure, attributed to the pressure-induced optimized interface that reduces the compressive strain on core. The pressure difference between core and shell increases the conduction band and valence band offsets and further achieves the core@shell configuration transition from quasi type II to type I. Accordingly, the PL intensity of CdS@ZnS NCs slightly increases, along with a faster blue-shift rate of PL peak under low pressure. This study elucidates the interplay between external physical pressure and interfacial chemical stress for core@shell NCs, leading to precise construction of interface engineering for practical applications.

Stacking Arrangement and Orientation of Aromatic Cations Tune Bandgap and Charge Transport of 2D Organic-Inorganic Hybrid Perovskites

Chemical modifications on aromatic spacers of 2D perovskites have been demonstrated to be an effective strategy to simultaneously improve optoelectronic properties and stability. However, its underlying mechanism is poorly understood. By using 2D phenyl-based perovskites ([C6 H5 (CH2 )m NH3 ]2 PbI4 ) as models, the authors have revealed how the chemical nature of aromatic cations tunes the bandgap and charge transport of 2D perovskites by utilizing sum-frequency generation vibrational spectroscopy to determine the stacking arrangement and orientation of aromatic cations. It is found that the antiparallel slip-stack arrangement of phenyl rings between adjacent layers induces an indirect band gap, resulting in anomalous carrier dynamics. Incorporation of the CH2 moiety causes stacking rearrangement of the phenyl ring and thus promotes an indirect to direct bandgap transition. In direct-bandgap perovskites, higher carrier mobility correlates with a larger orientation angle of the phenyl ring. Further optimizing the orientation angle by introducing a para-substituted element in a phenyl ring, higher carrier mobility is obtained. This work highlights the importance of leveraging stacking arrangement and orientation of the aromatic cations to tune the photophysical properties, which opens up an avenue for advancing high-performance 2D perovskites optoelectronics via molecular engineering.

Carrier Modulation via Tunnel Oxide Passivating at Buried Perovskite Interface for Stable Carbon-Based Solar Cells

Carbon-based perovskite solar cells (C-PSCs) have the impressive characteristics of good stability and potential commercialization. The insulating layers play crucial roles in charge modulation at the buried perovskite interface in mesoporous C-PSCs. In this work, the effects of three different tunnel oxide layers on the performance of air-processed C-PSCs are scrutinized to unveil the passivating quality. Devices with ZrO2-passivated TiO2 electron contacts exhibit higher power conversion efficiencies (PCEs) than their Al2O3 and SiO2 counterparts. The porous feature and robust chemical properties of ZrO2 ensure the high quality of the perovskite absorber, thus ensuring the high repeatability of our devices. An efficiency level of 14.96% puts our device among the state-of-the-art hole-conductor-free C-PSCs, and our unencapsulated device maintains 88.9% of its initial performance after 11,520 h (480 days) of ambient storage. These results demonstrate that the function of tunnel oxides at the perovskite/electron contact interface is important to manipulate the charge transfer dynamics that critically affect the performance and stability of C-PSCs.

Synergic Electron and Defect Compensation Minimizes Voltage Loss in Lead-Free Perovskite Solar Cells

Sn perovskite solar cells have been regarded as one of the most promising alternatives to the Pb-based counterparts due to their low toxicity and excellent optoelectronic properties. However, the Sn perovskites are notorious to feature heavy p-doping characteristics and possess abundant vacancy defects, which result in under-optimized interfacial energy level alignment and severe nonradiative recombination. Here, we reported a synergic "electron and defect compensation" strategy to simultaneously modulate the electronic structures and defect profiles of Sn perovskites via incorporating a traced amount (0.1 mol %) of heterovalent metal halide salts. Consequently, the doping level of modified Sn perovskites was altered from heavy p-type to weak p-type (i.e. up-shifting the Fermi level by ∼0.12 eV) that determinately reducing the barrier of interfacial charge extraction and effectively suppressing the charge recombination loss throughout the bulk perovskite film and at relevant interfaces. Pioneeringly, the resultant device modified with electron and defect compensation realized a champion efficiency of 14.02 %, which is ∼46 % higher than that of control device (9.56 %). Notably, a record-high photovoltage of 1.013 V was attained, corresponding to the lowest voltage deficit of 0.38 eV reported to date, and narrowing the gap with Pb-based analogues (∼0.30 V).

Advances on the Application of Wide Band-Gap Insulating Materials in Perovskite Solar Cells

In recent years, the development of perovskite solar cells (PSCs) is advancing rapidly with their recorded photoelectric conversion efficiency reaching 25.8%. However, for the commercialization of PSCs, it is also necessary to solve their stability issue. In order to improve the device performance, various additives and interface modification strategies have been proposed. While, in many cases, they can guarantee a significant increase in efficiency, but not ensure improved stability. Therefore, materials that improve the device efficiency and stability simultaneously are urgently needed. Some wide band-gap insulating materials with stable physical and chemical properties are promising alternative materials. In this review, the application of wide band-gap insulating materials in PSCs, including their preparation methods, working roles, and mechanisms are described, which will promote the commercial application of PSCs.

Solvent-Assisted Crystallization of an α-Fe2O3 Electron Transport Layer for Efficient and Stable Perovskite Solar Cells Featuring Negligible Hysteresis

Inorganic-organic metal halide perovskite solar cells (PSCs) show power conversion efficiency values approaching those of state-of-the-art silicon solar cells. In a quest to find suitable charge transport materials in PSCs, hematite (α-Fe₂O₃) has emerged as a potential electron transport layer (ETL) in n-i-p planar PSCs due to its low cost, UV light stability, and nontoxicity. Yet, the performance of α-Fe₂O₃-based PSCs is far lower than that of state-of-the-art PSCs owing to the poor quality of the α-Fe₂O₃ ETL. In this work, solvent-assisted crystallization of α-Fe₂O₃ ETLs was carried out to examine the impact of solvents on the optoelectronic properties of α-Fe₂O₃ thin films. Among the various solvents used in this study (deionized water, ethanol, iso-propanol, and iso-butanol), optimized ethanol-based α-Fe₂O₃ ETLs lead to champion device performance with a power conversion efficiency of 13% with a reduced hysteresis index of 0.04 in an n-i-p-configured PSC. The PSC also exhibited superior long-term inert and ambient stabilities compared to a reference device made using a SnO₂ ETL. Through a series of experiments spanning structural, morphological, and optoelectronic properties of the various α-Fe₂O₃ thin films and their devices, we provide insights into the reasons for the improved photovoltaic performance. It is noted that the formation of a pinhole-free compact morphology of ETLs facilitates crack-free surface coverage of the perovskite film atop an α-Fe₂O₃ ETL, reduces interfacial recombination, and enhances charge transfer efficiency. This work opens up the route toward novel ETLs for the development of efficient and photo-stable PSCs.

Stable Electron-Transport-Layer-Free Perovskite Solar Cells with over 22% Power Conversion Efficiency

Due to their low cost and simplified production process, electron-transport-layer-free (ETL-free) perovskite solar cells (PSCs) have attracted great attention recently. However, the performance of ETL-free PSCs is still at a disadvantage compared to cells with a conventional n-i-p structure due to the severe recombination of charge carriers at the perovskite/anode interface. Here, we report a strategy to fabricate stable ETL-free FAPbI₃ PSCs by in situ formation of a low dimensional perovskite layer between the FTO and the perovskite. This interlayer gives rise to the energy band bending and reduced defect density in the perovskite film and indirect contact and improved energy level alignment between the anode and perovskite, which facilitates charge carrier transport and collection and suppresses charge carrier recombination. As a result, ETL-free PSCs with a power conversion efficiency (PCE) exceeding 22% are achieved under ambient conditions.

Linear optical afterglow and nonlinear optical harmonic generation from chiral tin(IV) halides: the role of lattice distortions

The striking chemical variability of hybrid organic-inorganic metal halides (HOMHs) endows them with fascinating optoelectronic properties. The inorganic skeletons of HOMHs are often flexible and their lattice deformations could serve as an effective factor for enabling the functionalities of HOMHs. Here, the linear and nonlinear optical properties of zero-dimensional (0D) tin(IV) halides have been tuned by structural distortion facilitated by the chiral amines. Enantiopure α-methylbenzyl ammoniums (XMBA, X = Cl, F) effectively transfer their chirality to the inorganic scaffolds when forming the tin(IV) halides, which enables polar arrangements in their crystals and leads to outstanding second-order nonlinear optical performances. In contrast, the racemic mixture of R- and S-FMBA results in the formation of HOMHs with room temperature phosphorescence. The lower lattice deformation in (rac-FMBA)₂SnCl₆ restrains the non-radiative decay from electron-phonon coupling and facilitates the photoluminescence. Meanwhile, the marked π-π interaction stabilizes the T₁ state for phosphorescent emission. These distinct linear and nonlinear optical properties denote the important role that the lattice distortion plays in tuning the optical properties of low-dimensional HOMHs, and offer a promising perspective of 0D tin(IV) halides for applications in optoelectronic materials and devices.

Diethanolamine Modified Perovskite-Substrate Interface for Realizing Efficient ESL-Free PSCs

Simplifying device layout, particularly avoiding the complex fabrication steps and multiple high-temperature treatment requirements for electron-selective layers (ESLs) have made ESL-free perovskite solar cells (PSCs) attractive. However, the poor perovskite/substrate interface and inadequate quality of solution-processed perovskite thin films induce inefficient interfacial-charge extraction, limiting the power conversion efficiency (PCEs) of ESL-free PSCs. A highly compact and homogenous perovskite thin film with large grains was formed here by inserting an interfacial monolayer of diethanolamine (DEA) molecules between the perovskite and ITO substrate. In addition, the DEA created a favorable dipole layer at the interface of perovskite and ITO substrate by molecular adsorption, which suppressed charge recombination. Comparatively, PSCs based on DEA-treated ITO substrates delivered PCEs of up to 20.77%, one of the highest among ESL-free PSCs. Additionally, this technique successfully elongates the lifespan of ESL-free PSCs as 80% of the initial PCE was maintained after 550 h under AM 1.5 G irradiation at ambient temperature.

Inhibiting Li+ migration by thenoyltrifluoroacetone toward efficient and stable perovskite solar cells

Thenoyltrifluoroacetone (TTA) modifies the perovskite/spiro-OMeTAD interface to inhibit Li+ migration from the hole transport layer to the perovskite layer and improves the performance of perovskite solar cells.

Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon

Electronic doping is applied to tailor the electrical and optoelectronic properties of semiconductors, which have been widely adopted in information and clean energy technologies, like integrated circuit fabrication and PVs. Though this concept has prevailed in conventional PVs, it has achieved limited success in the new-generation PV materials, particularly in halide perovskites, owing to their soft lattice nature and self-compensation by intrinsic defects. In this review, we summarize the evolution of the theoretical understanding and strategies of electronic doping from Si-based photovoltaics to thin-film technologies, e.g., GaAs, CdTe and Cu(In,Ga)Se₂, and also cover the emerging PVs including halide perovskites and organic solar cells. We focus on the chemical approaches to electronic doping, emphasizing various chemical interactions/bonding throughout materials synthesis/modification to device fabrication/operation. Furthermore, we propose new classifications and models of electronic doping based on the physical and chemical properties of dopants, in the context of solid-state chemistry, which inspires further development of optoelectronics based on perovskites and other hybrid materials. Finally, we outline the effects of electronic doping in semiconducting materials and highlight the challenges that need to be overcome for reliable and controllable doping.

Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices

Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.

Multidentate Chelation Heals Structural Imperfections for Minimized Recombination Loss in Lead-Free Perovskite Solar Cells

Tin-based perovskite solar cells (Sn-PSCs) have emerged as promising environmentally viable photovoltaic technologies, but still suffer from severe non-radiative recombination loss due to the presence of abundant deep-level defects in the perovskite film and under-optimized carrier dynamics throughout the device. Herein, we healed the structural imperfections of Sn perovskites in an "inside-out" manner by incorporating a new class of biocompatible chelating agent with multidentate claws, namely, 2-Guanidinoacetic acid (GAA), which passivated a variety of deep-level Sn-related and I-related defects, cooperatively reinforced the passivation efficacy, released the lattice strain, improved the structural toughness, and promoted the carrier transport of Sn perovskites. Encouragingly, an efficiency of 13.7 % with a small voltage deficit of ≈0.47 V has been achieved for the GAA-modified Sn-PSCs. GAA modification also extended the lifespan of Sn-PSCs over 1200 hours.

Facile NaF Treatment Achieves 20% Efficient ETL-Free Perovskite Solar Cells

Electron transporting layer (ETL)-free perovskite solar cells (PSCs) exhibit promising progress in photovoltaic devices due to the elimination of the complex and energy-/time-consuming preparation route of ETLs. However, the performance of ETL-free devices still lags behind conventional devices because of mismatched energy levels and undesired interfacial charge recombination. In this study, we introduce sodium fluoride (NaF) as an interface layer in ETL-free PSCs to align the energy level between the perovskite and the FTO electrode. KPFM measurements clearly show that the NaF layer covers the surface of rough underlying FTO very well. This interface modification reduces the work function of FTO by forming an interfacial dipole layer, leading to band bending at the FTO/perovskite interface, which facilitates an effective electron carrier collection. Besides, the part of Na⁺ ions is found to be able to migrate into the absorber layer, facilitating enlarged grains and spontaneous passivation of the perovskite layer. As a result, the efficiency of the NaF-treated cell reaches 20%, comparable to those of state-of-the-art ETL-based cells. Moreover, this strategy effectively enhances the operational stability of devices by preserving 94% of the initial efficiency after storage for 500 h under continuous light soaking at 55 °C. Overall, these improvements in photovoltaic properties are clear indicators of enhanced interface passivation by NaF-based interface engineering.

Recent Criterion on Stability Enhancement of Perovskite Solar Cells

Perovskite solar cells (PSCs) have captured the attention of the global energy research community in recent years by showing an exponential augmentation in their performance and stability. The supremacy of the light-harvesting efficiency and wider band gap of perovskite sensitizers have led to these devices being compared with the most outstanding rival silicon-based solar cells. Nevertheless, there are some issues such as their poor lifetime stability, considerable J–V hysteresis, and the toxicity of the conventional constituent materials which restrict their prevalence in the marketplace. The poor stability of PSCs with regard to humidity, UV radiation, oxygen and heat especially limits their industrial application. This review focuses on the in-depth studies of different direct and indirect parameters of PSC device instability. The mechanism for device degradation for several parameters and the complementary materials showing promising results are systematically analyzed. The main objective of this work is to review the effectual strategies of enhancing the stability of PSCs. Several important factors such as material engineering, novel device structure design, hole-transporting materials (HTMs), electron-transporting materials (ETMs), electrode materials preparation, and encapsulation methods that need to be taken care of in order to improve the stability of PSCs are discussed extensively. Conclusively, this review discusses some opportunities for the commercialization of PSCs with high efficiency and stability.

Interpretation of Rubidium-Based Perovskite Recipes toward Electronic Passivation and Ion-Diffusion Mitigation

Rubidium cation (Rb⁺ ) addition is witnessed to play a pivotal role in boosting the comprehensive performance of organic-inorganic hybrid perovskite solar cells. However, the origin of such success derived from irreplaceable superiorities brought by Rb⁺ remains ambiguous. Herein, grain-boundary-including atomic models are adopted for the accurate theoretical analysis of practical Rb⁺ distribution in perovskite structures. The spatial distribution, covering both the grain interiors and boundaries, is thoroughly identified by virtue of synchrotron-based grazing-incidence X-ray diffraction. On this basis, the prominent elevation of the halogen vacancy formation energy, improved charge-carrier dynamics, and the electronic passivation mechanism in the grain interior are expounded. As evidenced by the increased energy barrier and suppressed microcurrent, the critical role of Rb⁺ addition in blocking the diffusion pathway along grain boundaries, inhibiting halide phase segregation, and eventually enhancing intrinsic stability is elucidated. Hence, the linkage avalanche effect of occupied location dominated by subtle changes in Rb⁺ concentration on electronic defects, ion migration, and phase stability is completely investigated in detail, shedding a new light on the advancement of high-efficiency cascade-incorporating strategies and perovskite compositional engineering.

Modulating optical properties and interfacial electron transfer of CsPbBr3 perovskite nanocrystals via indium ion and chlorine ion co-doping

In this work, we demonstrated an in situ approach for doping CsPbBr₃ nanocrystals (NCs) with In³⁺ and Cl^- with a ligand-assisted precipitation method at room temperature. The In³⁺ and Cl^- co-doped NCs are characterized by the powder x-ray diffraction patterns, ultraviolet-visible, photoluminescence (PL) spectroscopy, time-resolved PL (TRPL), ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy. Based on PL and TRPL results, the non-radiative nature of In³⁺-doping induced localized impurity states is revealed. Furthermore, the impact of In³⁺ and Cl^- doping on charge transfer (CT) from the NCs to molecular acceptors was investigated and the results indicate that the CT at the interface of NCs can be tuned and promoted by In³⁺ and Cl^- co-doping. This enhanced CT is attributed to the enlarged energy difference between relevant states of the molecular acceptor and the NCs by In³⁺ and Cl^- upon co-doping. This work provides insight into how to control interfacial CT in perovskite NCs, which is important for optoelectronic applications.

Carrier Transport Layer-Free Perovskite Solar Cells

Power conversion efficiencies (PCEs) of up to 25.5 % have been reported for perovskite solar cells (PSCs). Thus, they have shown great potential for commercial applications. Therefore, simplifying technological process and reducing production costs have been a widespread concern among scientific and industrial communities. In this study, PSCs are prepared with the simplest device architecture (FTO/MAPbI₃ /carbon). A high-quality perovskite film with few interface defects and good carrier transport is obtained by tuning the p-n properties, matching energy levels, and enhancing carrier collection and transport. A PCE of 12.01 % is achieved, which is the best reported to date for this device structure. The device also shows excellent long-term stability, owing to the elimination of charge transport layers and the usage of hydrophobic materials. This study provides a new approach to reduce production costs and simplify production of PSCs.

Molten-Salt-Assisted CsPbI3 Perovskite Crystallization for Nearly 20%-Efficiency Solar Cells

Dynamic manipulation of crystallization is pivotal to the quality of polycrystalline films. A molten-salt-assisted crystallization (MSAC) strategy is presented to improve grain growth of the all-inorganic perovskite films. Compared with the traditional solvent annealing, MSAC enables more intensive mass transfer by means of convection and diffusion, which is beneficial to the interaction among the precursor colloids and to inducing in-plane growth of perovskite grains, resulting in the formation of high-quality perovskite films with suppressed pinhole and crack formation. Additionally, the introduction of molten salt alters the intermediate phases, and thus changes the crystallization pathways by reducing the energy barrier to produce films with desired optical and electrical properties. As a result, the MSAC strategy endows the devices with champion steady-state output efficiency of 19.83% and open-circuit voltage (V_oc ) as high as 1.2 V, among the highest for this type of solar cell, thanks to its effectively reduced V_oc deficit.

A Green Lead Recycling Strategy from Used Lead Acid Batteries for Efficient Inverted Perovskite Solar Cells

Lead is widely used as a crucial elemental for lead acid batteries (LABs) and emerging halide perovskite solar cells (PSCs). However, the use of soluble lead will raise environmental concerns. For the purpose of Pb recycling, herein, we report a reactant-recycling strategy to extract Pb from used LABs and synthesize high-purity PbI₂. The recycled PbI₂ shows smaller grain size, higher crystallinity, and higher thermal stability compared to the commercial sources. Perovskite films deposited with the high-quality PbI₂ show larger grain size and fewer defects than the commercial ones. Consequently, the synthesized PbI₂ enables a power conversation efficiency of 20.45% for the inverted MAPbI₃ (MA= methylammonium) PSCs with excellent air stability. This work offers a novel strategy for lead recovery from LABs and a green path for the realization of high-performance PSCs with high defect tolerance.

Analysis of Hybrid Hetero-Homo Junction Lead-Free Perovskite Solar Cells by SCAPS Simulator

In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was found that p-side thickness must be wider than the n-side, while its acceptor concentration should be slightly lower than the donor concentration of the n-side to achieve maximum efficiency. In addition, different absorber types, namely, i-absorber, n-absorber and p-absorber, are compared to the proposed pn-absorber, showing a performance-boosting effect when using the latter. Moreover, the proposed structure is made without a hole transport layer (HTL) to avoid the organic issues of the HTL materials. The back metal work function, bulk trap density and ETL material are optimized for best performance of the HTL-free structure, giving Jsc = 26.48, Voc = 0.948 V, FF = 77.20 and PCE = 19.37% for AM1.5 solar spectra. Such results highlight the prospective of the proposed structure and emphasize the importance of using HTL-free solar cells without deteriorating the efficiency. The solar cell is investigated by using SCAPS simulator.

Water and oxygen co-induced microstructure relaxation and evolution in CH3NH3PbI3

Owing to perovskite possessing the outstanding optoelectronic properties, perovskite-based solar cells show prominent performance. The stability of perovskite-based solar cells hampers the progress of commercialization, so it is important to understand the microstructure mechanism of perovskite degradation under the humidity and oxygen environmental conditions. In this study, a meaningful Debye-type dielectric relaxation was observed under water vapor and oxygen co-treatment conditions. Interestingly, the relaxation was not observed under water vapor or oxygen treatment individually. This new dielectric relaxation is identified as a direct result of dipole jump, and its activation energy was measured to be 630 ± 6 meV. According to photoelectron spectroscopy and ¹³C nuclear magnetic resonance data, we suggest that the dipoles are formed by CH₃NH₃⁺ (MA⁺) and superoxide (O₂^-), which originate from the distorted crystal lattice and water vapor-weakened hydrogen bonds of Pb-I cages. In addition, the activation energy fitted by dielectric relaxation might be the energy of ion migration. This study contributes to understanding the mechanism of perovskite degradation from the view of microstructure relaxation and evolution, and also provides a method for the analysis of ion migration energy.

Indium-antimony-halide single crystals for high-efficiency white-light emission and anti-counterfeiting

Although single-source white emissive perovskite has emerged as a class of encouraging light-emitting material, the synthesis of lead-free halide perovskite materials with high luminous efficiency is still challenging. Here, we report a series of zero-dimensional indium-antimony (In/Sb) alloyed halide single crystals, BAPPIn_2-2x Sb_2x Cl₁₀ (BAPP = C₁₀H₂₈N₄, x = 0 to 1), with tunable emission. In BAPPIn_1.996Sb_0.004Cl₁₀, bright yellow emission with near 100% photoluminescence quantum yield (PLQY) is yielded when it was excited at 320 nm, which turns into bright white-light emission with a PLQY of 44.0% when excited at 365 nm. Combined spectroscopy and theoretical studies reveal that the BAPP⁴⁺-associated blue emission and inorganic polyhedron-afforded orange emission function as a perfect pair of complementary colors affording white light in BAPPIn_1.996Sb_0.004Cl₁₀ Moreover, the interesting afterglow behavior, together with excitation-dependent emission property, makes BAPPIn_2-2x Sb_2x Cl₁₀ as high-performance anti-counterfeiting/information storage materials.

Fluorinated Oligomer Wrapped Perovskite Crystals for Inverted MAPbI3 Solar Cells with 21% Efficiency and Enhanced Stability

Defects at the grain boundary provide sites for nonradiative recombination in halide perovskite solar cells (PSCs). Here, by polymerization and fluorination of a Lewis acid of 4,4-bis(4-hydroxyphenyl)pentanoic acid, a fluorinated oligomer (FO-19) is synthesized and applied to passivate these defects in methlyammonium lead iodide (MAPbI₃). It is demonstrated that the carboxyl bond of FO-19 was coordinated with Pb ions in the perovskite films to achieve a wrapping effect on the perovskite crystals. The defects of perovskite film are effectively passivated, and the undesirable nonradiative recombination is greatly inhibited. As a result, FO-19 gives a power conversion efficiency of 21.23% for the inverted MAPbI₃-based PSCs, which is among the highest reported values in the literature. Meanwhile, the corresponding device with FO-19 exhibits significantly improved humidity and thermal stability. Therefore, this work offers insights into the realization of high-efficiency and stable PSCs through fluorinated additive engineering.

Crystalline Porous Materials for Nonlinear Optics

Crystalline porous materials have been extensively explored for wide applications in many fields including nonlinear optics (NLO) for frequency doubling, two-photon absorption/emission, optical limiting effect, photoelectric conversion, and biological imaging. The structural diversity and flexibility of the crystalline porous materials such as the metal-organic frameworks, covalent organic frameworks, and polyoxometalates provide numerous opportunities to orderly organize the dipolar chromophores and to systemically modify the type and concentration of these dipolar chromophores in the confined spaces, which are highly desirable for NLO. Here, the recent advances in the crystalline porous NLO materials are discussed. The second-order NLO of crystalline porous materials have been mainly devoted to the chiral and achiral structures, while the third-order NLO crystalline porous materials have been categorized into pure organic and hybrid organic/inorganic materials. Some representative properties and applications of these crystalline porous materials in the NLO regime are highlighted. The future perspective of challenges as well as the potential research directions of crystalline porous materials have been also proposed.

Single-Layer MoS2 Grown on Atomically Flat SrTiO3 Single Crystal for Enhanced Trionic Luminescence

The elaborate interface interactions can be critical in determining the achievable functionality of a semiconductor heterojunction (SH), particularly when two-dimensional material is enclosed in the system and its thickness is at an atomic extreme. In this work, we have successfully constructed a SH model system composed of typical transition-metal chalcogenide (TMDs) and transition metal oxides (TMO) by directly growing molybdenum sulfide (MoS₂) nanosheets on atomically flat strontium titanate (SrTiO₃) single crystal substrates through a conventional chemical vapor deposition (CVD) synthetic method. Multiple measurements have demonstrated the uniform monolayer thickness and single crystallinity of the MoS₂ nanosheets as well as the atomic flatness of the heterojunction surface, both characterizing an extremely high quality of the interface. Clear evidence have been obtained for the electron transfer from the MoS₂ adlayer to the SrTiO₃ substrate which varies against the interface conditions. More importantly, the photoluminescence of MoS₂ is significantly tailored, which is correlated with both the cleanness of the interface and the crystal orientation of the SrTiO₃ substrate. These results not only shed fresh lights on the structure-property relationship of the TMDs/TMO heterostructures but also manifest the importance of the ideal interface structure for a hybridized system.

Effects of CsSnxPb1-xI3 Quantum Dots as Interfacial Layer on Photovoltaic Performance of Carbon-Based Perovskite Solar Cells

In this work, inorganic tin-doped perovskite quantum dots (PQDs) are incorporated into carbon-based perovskite solar cells (PSCs) to improve their photovoltaic performance. On the one hand, by controlling the content of Sn²⁺ doping, the energy level of the tin-doped PQDs can be adjusted, to realize optimized band alignment and enhanced separation of photogenerated electron-hole pairs. On the other hand, the incorporation of tin-doped PQDs provided with a relatively high acceptor concentration due to the self-p-type doping effect is able to reduce the width of the depletion region near the back surface of the perovskite, thereby enhancing the hole extraction. Particularly, after the addition of CsSn_0.2Pb_0.8I₃ quantum dots (QDs), improvement of the power conversion efficiency (PCE) from 12.80 to 14.22% can be obtained, in comparison with the pristine device. Moreover, the experimental results are analyzed through the simulation of the one-dimensional perovskite/tin-doped PQDs heterojunction.

Cementitious grain-boundary passivation for flexible perovskite solar cells with superior environmental stability and mechanical robustness

The power conversion effciency (PCE) of flexible perovskite solar cells (PSCs) has increased rapidly, while the mechanical flexibility and environmental stability are still far from satisfactory. Previous studies show the environmental degradation and ductile cracks of perovskite films usually begin at the grain boundaries (GBs). Herein, sulfonated graphene oxide (s-GO) is employed to construct a cementitious GBs by interacting with the [PbI₆]^4- at GBs. The resultant s-GO-[PbI₆]^4- complex can effectively passivate the defects of vacant iodine, and the devices with s-GO exhibit remarkable waterproofness and flexibility due to the tough and water-insoluble GBs. The champion PCE of 20.56% (1.01 cm²) in a device treated with s-GO is achieved. This device retains 90% of its original PCE after 180 d stored in the ambient condition, as well as over 80% retention after 10,000 bending cycles at a curvature radius of 3 mm.

Dielectric confinement for designing compositions and optoelectronic properties of 2D layered hybrid perovskites

Two dimensional (2D) layered hybrid lead halide perovskites are a fascinating class of semiconductors displaying a plethora of interesting optoelectronic properties with potential for application in solar cells, light emitting diodes, etc. Most of these properties can be linked to their repeating quantum well-like structures providing 2D excitons. In this perspective, we discuss how dielectric confinement of excitons originates in these layered hybrid perovskites, and then, how it can be used to tune the excitonic properties. In particular, we discuss the recent theoretical and experimental advances correlating dielectric confinement with chemical composition, excitonic binding energy, and optoelectronic property. The freedom from the restrictions of the Goldsmith tolerance factor allows the synthesis of hundreds of compositions of 2D layered hybrid perovskites by independently varying the organic and inorganic layers. We envisage that the combination of this compositional flexibility with the concepts of dielectric confinement discussed in this perspective would be a path forward for designing novel optoelectronic materials.