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Wang H, Wang C, Zhang Y, Wang Z, Zhu Y, Wang Y, Hong X, Zhang H, Fan N, Qiu M. Recent Advances in Xenes Based FET for Biosensing Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025:e2500752. [PMID: 40364779 DOI: 10.1002/advs.202500752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2025] [Revised: 03/05/2025] [Indexed: 05/15/2025]
Abstract
In recent years, monoelemental 2D materials (Xenes) such as graphene, graphdiyne, silicene, phosphorene, and tellurene, have gained significant traction in biosensing applications. Owing to their ultra-thin layered structure, exceptionally high specific surface area, unique surface electronic properties, excellent mechanical strength, flexibility, and other distinctive features, Xenes are recognized for their potential as materials with low detection limits, high speed, and exceptional flexibility in biosensing applications. In this review, the unique properties of Xenes, their synthesis, and recent theoretical and experimental advances in applications related to biosensing, including DNA/RNA biosensors, protein biosensors, small molecule biosensors, cell, and ion biosensors are comprehensively summarized. Finally, the challenges and prospects of this emerging field are discussed.
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Affiliation(s)
- Huide Wang
- State Key Laboratory of Radio frequency Heterogeneous integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy and Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Chen Wang
- Key Laboratory of Marine Chemistry Theory and Technology (Ministry of Education), College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao, 266100, China
| | - Yule Zhang
- State Key Laboratory of Radio frequency Heterogeneous integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy and Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ziqian Wang
- State Key Laboratory of Radio frequency Heterogeneous integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy and Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yihan Zhu
- State Key Laboratory of Radio frequency Heterogeneous integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy and Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yun Wang
- Shenzhen Eye Hospital, Shenzhen Eye Institute, Jinan University, Shenzhen, 518040, China
| | - Xiangqian Hong
- Shenzhen Eye Hospital, Shenzhen Eye Institute, Jinan University, Shenzhen, 518040, China
| | - Han Zhang
- State Key Laboratory of Radio frequency Heterogeneous integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy and Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ning Fan
- Shenzhen Eye Hospital, Shenzhen Eye Institute, Jinan University, Shenzhen, 518040, China
| | - Meng Qiu
- Key Laboratory of Marine Chemistry Theory and Technology (Ministry of Education), College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao, 266100, China
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Ding C, Zhu YL, Qu Z, Dai Y. Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In 2Se 3/α-Te van der Waals Heterostructures. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:21453-21459. [PMID: 39353076 DOI: 10.1021/acs.langmuir.4c02225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2024]
Abstract
The two-dimensional ferroelectric van der Waals (vdW) heterojunction has been recognized as one of the most promising combinations for emerging ferroelectric memory materials due to its noncovalent bonding and flexible stacking of various materials. In this work, the first-principles calculations were performed to study the stable geometry and electronic structure of α-In2Se3/α-Te, incorporating the vdW correction via the DFT-D2 method. The reversal of the polarization direction in α-In2Se3 can induce a transition in the heterostructure from metallic to semiconductor, accompanied by a shift from type-III to type-I band alignment. These changes are attributed to variations in interfacial charge transfer. Analysis of the modulation effects of external electric fields reveals that the P↑ α-In2Se3/α-Te configuration maintains metallic, whereas the P↓ α-In2Se3/α-Te configuration exhibits a linear reduction in band gap. Furthermore, both heterostructural configurations will undergo transitions to type-II band alignment transitions at 0.2 V Å-1 and within a range from 0.2 to 0.3 V Å-1 under external electric fields. Our findings offer valuable insights for applications such as ferroelectric memory and static gate devices with multiband alignment.
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Affiliation(s)
- Cheng Ding
- School of Electronic Information and Integrated Circuits, Hefei Normal University, Hefei 230601, PR China
| | - Yun-Lai Zhu
- School of Integrated Circuits, Anhui University, Hefei 230601, PR China
| | - Zihan Qu
- School of Integrated Circuits, Anhui University, Hefei 230601, PR China
| | - Yuehua Dai
- School of Integrated Circuits, Anhui University, Hefei 230601, PR China
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Yu J, Mu H, Wang P, Li H, Yang Z, Ren J, Li Y, Mei L, Zhang J, Yu W, Cui N, Yuan J, Wu J, Lan S, Zhang G, Lin S. Anisotropic van der Waals Tellurene-Based Multifunctional, Polarization-Sensitive, In-Line Optical Device. ACS NANO 2024; 18:19099-19109. [PMID: 39001858 DOI: 10.1021/acsnano.4c03973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Polarization plays a paramount role in scaling the optical network capacity. Anisotropic two-dimensional (2D) materials offer opportunities to exploit optical polarization-sensitive responses in various photonic and optoelectronic applications. However, the exploration of optical anisotropy in fiber in-line devices, critical for ultrafast pulse generation and modulation, remains limited. In this study, we present a fiber-integrated device based on a single-crystalline tellurene nanosheet. Benefiting from the chiral-chain crystal lattice and distinct optical dichroism of tellurene, multifunctional optical devices possessing diverse excellent properties can be achieved. By inserting the in-line device into a 1.5 μm fiber laser cavity, we generated both linearly polarized and dual-wavelength mode-locking pulses with a degree of polarization of 98% and exceptional long-term stability. Through a twisted configuration of two tellurene nanosheets, we realized an all-optical switching operation with a fast response. The multifunctional device also serves as a broadband photodetector. Notably, bipolar polarization encoding communication at 1550 nm can be achieved without any external voltage. The device's multifunctionality and stability in ambient environments established a promising prototype for integrating polarization as an additional physical dimension in fiber optical networks, encompassing diverse applications in light generation, modulation, and detection.
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Affiliation(s)
- Jing Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, China
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Pu Wang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Haozhe Li
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Zixin Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Jing Ren
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Yang Li
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jian Yuan
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Sheng Lan
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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Tyagi D, Laxmi V, Basu N, Reddy L, Tian Y, Ouyang Z, Nayak PK. Recent advances in two-dimensional perovskite materials for light-emitting diodes. DISCOVER NANO 2024; 19:109. [PMID: 38954158 PMCID: PMC11219672 DOI: 10.1186/s11671-024-04044-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Accepted: 06/10/2024] [Indexed: 07/04/2024]
Abstract
Light-emitting diodes (LEDs) are an indispensable part of our daily life. After being studied for a few decades, this field still has some room for improvement. In this regard, perovskite materials may take the leading role. In recent years, LEDs have become a most explored topic, owing to their various applications in photodetectors, solar cells, lasers, and so on. Noticeably, they exhibit significant characteristics in developing LEDs. The luminous efficiency of LEDs can be significantly enhanced by the combination of a poor illumination LED with low-dimensional perovskite. In 2014, the first perovskite-based LED was illuminated at room temperature. Furthermore, two-dimensional (2D) perovskites have enriched this field because of their optical and electronic properties and comparatively high stability in ambient conditions. Recent and relevant advancements in LEDs using low-dimensional perovskites including zero-dimensional to three-dimensional materials is reported. The major focus of this article is based on the 2D perovskites and their heterostructures (i.e., a combination of 2D perovskites with transition metal dichalcogenides, graphene, and hexagonal boron nitride). In comparison to 2D perovskites, heterostructures exhibit more potential for application in LEDs. State-of-the-art perovskite-based LEDs, current challenges, and prospects are also discussed.
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Affiliation(s)
- Deepika Tyagi
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
| | - Vijay Laxmi
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Nilanjan Basu
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Leelakrishna Reddy
- Department of Physics, University of Johannesburg, Johannesburg, 2006, South Africa
| | - Yibin Tian
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhengbiao Ouyang
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China.
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai, 600036, India.
- Centre for Nano and Material Sciences, Jain (Deemed-to-be University), Jain Global Campus, Kanakapura, , Bangalore, Karnataka, 562112, India.
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Suk SH, Seo SB, Cho YS, Wang J, Sim S. Ultrafast optical properties and applications of anisotropic 2D materials. NANOPHOTONICS (BERLIN, GERMANY) 2024; 13:107-154. [PMID: 39635300 PMCID: PMC11501201 DOI: 10.1515/nanoph-2023-0639] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2023] [Accepted: 12/27/2023] [Indexed: 12/07/2024]
Abstract
Two-dimensional (2D) layered materials exhibit strong light-matter interactions, remarkable excitonic effects, and ultrafast optical response, making them promising for high-speed on-chip nanophotonics. Recently, significant attention has been directed towards anisotropic 2D materials (A2DMs) with low in-plane crystal symmetry. These materials present unique optical properties dependent on polarization and direction, offering additional degrees of freedom absent in conventional isotropic 2D materials. In this review, we discuss recent progress in understanding the fundamental aspects and ultrafast nanophotonic applications of A2DMs. We cover structural characteristics and anisotropic linear/nonlinear optical properties of A2DMs, including well-studied black phosphorus and rhenium dichalcogenides, as well as emerging quasi-one-dimensional materials. Then, we discuss fundamental ultrafast anisotropic phenomena occurring in A2DMs, such as polarization-dependent ultrafast dynamics of charge carriers and excitons, their direction-dependent spatiotemporal diffusion, photo-induced symmetry switching, and anisotropic coherent acoustic phonons. Furthermore, we review state-of-the-art ultrafast nanophotonic applications based on A2DMs, including polarization-driven active all-optical modulations and ultrafast pulse generations. This review concludes by offering perspectives on the challenges and future prospects of A2DMs in ultrafast nanophotonics.
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Affiliation(s)
- Sang Ho Suk
- School of Electrical Engineering, Hanyang University, Ansan15588, South Korea
| | - Sung Bok Seo
- School of Electrical Engineering, Hanyang University, Ansan15588, South Korea
| | - Yeon Sik Cho
- School of Electrical Engineering, Hanyang University, Ansan15588, South Korea
| | - Jun Wang
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, China
| | - Sangwan Sim
- School of Electrical Engineering, Hanyang University, Ansan15588, South Korea
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Xing C, Li Z, Wang Z, Zhang S, Xie Z, Zhu X, Peng Z. Chemical Scissors Tailored Nano-Tellurium with High-Entropy Morphology for Efficient Foam-Hydrogel-Based Solar Photothermal Evaporators. NANO-MICRO LETTERS 2023; 16:47. [PMID: 38063910 PMCID: PMC10709277 DOI: 10.1007/s40820-023-01242-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2023] [Accepted: 10/07/2023] [Indexed: 10/11/2024]
Abstract
The development of tellurium (Te)-based semiconductor nanomaterials for efficient light-to-heat conversion may offer an effective means of harvesting sunlight to address global energy concerns. However, the nanosized Te (nano-Te) materials reported to date suffer from a series of drawbacks, including limited light absorption and a lack of surface structures. Herein, we report the preparation of nano-Te by electrochemical exfoliation using an electrolyzable room-temperature ionic liquid. Anions, cations, and their corresponding electrolytic products acting as chemical scissors can precisely intercalate and functionalize bulk Te. The resulting nano-Te has high morphological entropy, rich surface functional groups, and broad light absorption. We also constructed foam hydrogels based on poly (vinyl alcohol)/nano-Te, which achieved an evaporation rate and energy efficiency of 4.11 kg m-2 h-1 and 128%, respectively, under 1 sun irradiation. Furthermore, the evaporation rate was maintained in the range 2.5-3.0 kg m-2 h-1 outdoors under 0.5-1.0 sun, providing highly efficient evaporation under low light conditions.
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Affiliation(s)
- Chenyang Xing
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zihao Li
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ziao Wang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen, 518172, People's Republic of China
| | - Shaohui Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhongjian Xie
- Institute of Pediatrics, Shenzhen Children's Hospital, Shenzhen, 518038, Guangdong, People's Republic of China
| | - Xi Zhu
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen, 518172, People's Republic of China.
| | - Zhengchun Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, People's Republic of China.
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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Alessandro F, Macedonio F, Drioli E. Plasmonic Phenomena in Membrane Distillation. MEMBRANES 2023; 13:254. [PMID: 36984641 PMCID: PMC10058825 DOI: 10.3390/membranes13030254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Revised: 02/09/2023] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Water scarcity raises important concerns with respect to human sustainability and the preservation of important ecosystem functions. To satisfy water requirements, seawater desalination represents one of the most sustainable solutions. In recent decades, membrane distillation has emerged as a promising thermal desalination process that may help to overcome the drawbacks of traditional desalination processes. Nevertheless, in membrane distillation, the temperature at the feed membrane interface is significantly lower than that of the bulk feed water, due to the latent heat flux associated with water evaporation. This phenomenon, known as temperature polarization, in membrane distillation is a crucial issue that could be responsible for a decay of about 50% in the initial transmembrane water flux. The use of plasmonic nanostructures, acting as thermal hotspots in the conventional membranes, may improve the performance of membrane distillation units by reducing or eliminating the temperature polarization problem. Furthermore, an efficient conversion of light into heat offers new opportunities for the use of solar energy in membrane distillation. This work summarizes recent developments in the field of plasmonic-enhanced solar evaporation with a particular focus on solar-driven membrane distillation applications and its potential prospects.
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Li D, Xu Y, Guo J, Zhang F, Zhang Y, Liu J, Zhang H. Nonlinear optical properties and photoexcited carrier dynamics of MnPS 3 nanosheets. OPTICS EXPRESS 2022; 30:36802-36812. [PMID: 36258602 DOI: 10.1364/oe.471604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 09/06/2022] [Indexed: 06/16/2023]
Abstract
Here, we systematically report on the preparation of high-quality few-layered MnPS3 nanosheets (NSs) by chemical vapor transport (CVT) and mechanical stripping method, and its carrier dynamics and third-order nonlinear optical properties were studied. Using the classical technique of open aperture Z-scan, a typical phenomenon of saturable absorption (SA) was observed at 475 nm, which indicates that the material is expected to be used as a saturable absorber in ultrafast lasers. The typical phenomenon of reverse saturation absorption (RSA) is observed at 800 and 1550 nm, which shows its potential in the field of broadband optical limiting. Compared with graphene, BP, MXene, MoS2 and other typical two-dimensional materials, MnPS3 NSs has a higher modulation depth. Using the non-degenerate transient absorption spectroscopy technology at room temperature, a slower cooling process of thermal carrier of MnPS3 was observed. Moreover, the carrier lifetime can be tuned according to the wavelength. This work is of great significance to the improvement of MnPS3 based devices, and lays a foundation for the application of MnPS3 in short-wavelength photovoltaic cell, photoelectric detection and other fields.
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Huang Y, Xu H, Zhou Z, Jiang B, Li L, Ma Z, Zhou S. Thermally stable gold nanorod dispersed silicone composite with plasmonic resonance in the optical communication window. NANOTECHNOLOGY 2022; 33:415707. [PMID: 35728516 DOI: 10.1088/1361-6528/ac7abf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2022] [Accepted: 06/20/2022] [Indexed: 06/15/2023]
Abstract
Gold nanorods (AuNRs) possess a high optical nonlinear coefficient, ultrafast optical response speed and widely tunable localized surface plasmon resonance (LSPR) wavelength covering the visible and near infrared region. Therefore, they are extensively investigated for many optical applications. However, the poor thermal stability of the AuNRs seriously restricts their practical performance. In addition, for many applications, such as optical communication or laser modulation, AuNRs have to be combined with transparent solids, for example polymers, glass or crystals to make devices. Here, we report on the preparation of 0.23 mg AuNR dispersed methyl silicone resin (MSR) with longitudinal LSPR (L-LSPR) wavelength (1450 nm) in the optical communication window. We found that AuNR-silicone composites possess high thermal stability. After calcination in ambient environment at a temperature of 250 °C for 10 h, the L-LSPR peak of the sample can remain longer than 1380 nm, implying that the NR shape of the Au particles was well maintained. Using the open-aperture Z-scan technique, the nonlinear absorption coefficient of the composites was measured as -11.71 cm GW-1, higher than many nonlinear materials. Thus, the thermally stable AuNR@SiO2-MSR composite with high nonlinearity is promising for practical applications in the optical communication window.
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Affiliation(s)
- Yupeng Huang
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Haijiao Xu
- School of Physics and Optoelectronics, The State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Zhihao Zhou
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Bofan Jiang
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Lihua Li
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Zhijun Ma
- Research Center for Intelligent Sensing and Perception, Zhejiang Lab, Hangzhou 311121, People's Republic of China
| | - Shifeng Zhou
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, People's Republic of China
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Cao R, Fan S, Yin P, Ma C, Zeng Y, Wang H, Khan K, Wageh S, Al-Ghamd AA, Tareen AK, Al-Sehemi AG, Shi Z, Xiao J, Zhang H. Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2260. [PMID: 35808105 PMCID: PMC9268368 DOI: 10.3390/nano12132260] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 06/22/2022] [Accepted: 06/23/2022] [Indexed: 01/27/2023]
Abstract
Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.
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Affiliation(s)
- Rui Cao
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Sidi Fan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Peng Yin
- College of Photoelectrical Engineering, Changchun University of Science and Technology, Changchun 130022, China;
| | - Chunyang Ma
- Research Center of Circuits and Systems, Peng Cheng Laboratory (PCL), Shenzhen 518055, China;
| | - Yonghong Zeng
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Huide Wang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia; (S.W.); (A.A.A.-G.)
| | - Ahmed A. Al-Ghamd
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia; (S.W.); (A.A.A.-G.)
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China;
| | - Abdullah G. Al-Sehemi
- Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, Saudi Arabia;
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Jing Xiao
- College of Physics and Electronic Engineering, Taishan University, Tai’an 271000, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
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11
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Tian Y, Chen Y, Liu Y, Li H, Dai Z. Elemental Two-Dimensional Materials for Li/Na-Ion Battery Anode Applications. CHEM REC 2022; 22:e202200123. [PMID: 35758546 DOI: 10.1002/tcr.202200123] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2022] [Revised: 06/09/2022] [Indexed: 11/11/2022]
Abstract
Two-dimensional (2D) nanostructure is currently the subject in the fields of new energy storage and devices. During the past years, a broad range of 2D materials represented by graphene have been developed and endow with excellent electrochemical properties. Among them, elemental 2D materials (Xenes) are an emerged material family for Li/Na-ion battery (LIB/SIB) anodes. Compared with other 2D materials and bulk materials, Xenes may exhibit some great superiorities for Li/Na storage, including excellent conductivity, fast ion diffusion and large active sites exposure. In this review, we provide a systematic summary of the recent progress and achievements of Xenes as well as their applications in LIBs/SIBs. The broad categorization of Xenes from group IIIA to VIA has been concisely outlined, and the related details in syntheses, structures and Li/Na-ion storage properties are reviewed. Further, the latest research progress of Xenes in Li/Na ion batteries are summarized, together with mechanism discussions. Finally, the challenges and prospects of Xenes applied to Li/Na ion battery are proposed based on its current developments.
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Affiliation(s)
- Yahui Tian
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Ya Chen
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Yaoda Liu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Zhengfei Dai
- Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus Materials, The Higher Educational Key Laboratory for Phosphorus Chemical Engineering of Yunnan Province, Kunming University of Science and Technology, Kunming, 650500, China
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12
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Lv H, Chu L, Wang S, Sun S, Sun X, Jia Y, Chen F. Layer-dependent nonlinear optical properties of two-dimensional InSe and its applications in waveguide lasers. OPTICS EXPRESS 2022; 30:23986-23999. [PMID: 36225069 DOI: 10.1364/oe.462811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Accepted: 06/06/2022] [Indexed: 06/16/2023]
Abstract
The thickness-dependent third-order nonlinear optical properties of two-dimensional β-InSe and its potential applications as a saturable absorber in pulsed laser generation are investigated. InSe sheets with different layers are prepared by the chemical vapor deposition. Using open-aperture femtosecond Z-scan technique at 1030 nm, the modulation depth and nonlinear absorption coefficient are obtained to be 36% and -1.6 × 104 cm·GW-1, respectively. The intrinsic mechanism of the layer-dependent energy band structure evolution is analyzed based on density functional theory, and the theoretical analysis is consistent with the experimental results. Based on a waveguide cavity, a Q-switched mode-locked laser at 1 µm with a repetition frequency of 8.51 GHz and a pulse duration of 28 ps is achieved by utilizing the layered InSe as a saturable absorber. This work provides an in-depth understanding of layer-dependent properties of InSe and extends its applications in laser technology for compact light devices.
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13
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Thankamani PR, Thomas S. Tellurium based materials for nonlinear optical applications. PHYSICAL SCIENCES REVIEWS 2022. [DOI: 10.1515/psr-2021-0117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
Abstract
Materials having broadband nonlinear optical responses find applications in photonics and optoelectronics devices. Novel materials with improved nonlinear optical properties are necessary for realizing effective all-optical switches, modulators etc. Tellurium (Te) and novel low-dimensional derivatives of Te offer intriguing nonlinear optical responses, making them promising candidates for design of various photonic devices.
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Affiliation(s)
- Priya Rose Thankamani
- International School of Photonics , Cochin University of Science and Technology , Cochin 682022 , Kerala , India
- Inter University Center for Nanomaterials and Devices (IUCND) , Cochin University of Science and Technology , Cochin 682022 , Kerala , India
| | - Sheenu Thomas
- International School of Photonics , Cochin University of Science and Technology , Cochin 682022 , Kerala , India
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14
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Hu P, Li J, Jin J, Lin X, Tan X. Highly Sensitive Photopolymer for Holographic Data Storage Containing Methacryl Polyhedral Oligomeric Silsesquioxane. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21544-21554. [PMID: 35486469 PMCID: PMC9100513 DOI: 10.1021/acsami.2c04011] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 04/22/2022] [Indexed: 06/14/2023]
Abstract
Herein, via introducing eight methacryl polyhedral oligomeric silsesquioxane (Ma-POSS), we dramatically enhance the holographic performance of phenanthraquinone-doped poly(methyl methacrylate) (PQ/PMMA) photopolymer with excellent characteristics of high sensitivity, high diffraction efficiency, and neglectable volume shrinkage for holographic data storage, the photosensitivity, diffraction efficiency, and volume shrinkage reaching 1.47 cm/J, ∼75%, and ∼0.09%, respectively. Ma-POSS here dramatically enhances the photosensitivity ∼5.5 times, diffraction efficiency more than 50%, and suppressed the volume shrinkage over 4 times. Further analysis reveals that Ma-POSS obviously increased the molecular weight by grafting PMMA to be a star-shaped macromolecule. And the residual C═C of POSS-PMMA dramatically increased the photosensitivity. Moreover, the star-shaped POSS-PMMA acting as a plasticizer dramatically enhances the mechanical properties and so reduces the photoinduced volume shrinkage of PQ/PMMA. Finally, by the use of the POSS-PMMA/PQ in a collinear holography system, it appeared to be promising for a fast but low bit error rate in holographic information storage. The current study thence has not only successfully synthesized photopolymer materials with potential for highly sensitive holographic storage applications but also investigated the microphysical mechanism of the impact of Ma-POSS on the holographic properties of PQ/PMMA photopolymer and clarified the thermal- and photoreaction processes of the POSS-PMMA/PQ photopolymer.
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Affiliation(s)
- Po Hu
- College
of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350117, China
- Henan
Provincial Key Laboratory of intelligent lighting, Huanghuai University, Zhumadian 463000, China
| | - Jinhong Li
- College
of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350117, China
| | - Junchao Jin
- College
of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350117, China
| | - Xiao Lin
- College
of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350117, China
| | - Xiaodi Tan
- Information
Photonics Research Center, Key Laboratory of Optoelectronic Science
and for Medicine of Ministry of Education, Fujian Provincial Key Laboratory
of Photonics Technology, Fujian Provincial Engineering Technology
Research Center of Photoelectric Sensing Application, Fujian Normal University, Fuzhou 350117, China
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15
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Dai Y, Yu Q, Yang X, Guo K, Zhang Y, Zhang Y, Zhang J, Li J, Chen J, Deng H, Xian T, Wang X, Wu J, Zhang K. Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb 2GeTe 4 with Asymmetric Architecture for Ultrafast Photonics. ACS NANO 2022; 16:4239-4250. [PMID: 35191693 DOI: 10.1021/acsnano.1c10241] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb2GeTe4, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb2GeTe4 were revealed by a thermodynamic phase diagram. Furthermore, the Nb2GeTe4-SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb2GeTe4-SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb2GeTe4 shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.
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Affiliation(s)
- Yongping Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiaoxin Yang
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jie Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Shanghai IC R&D Center, Shanghai 201210, China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Tianhao Xian
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
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16
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Zheng H, Li M, Chen J, Quan A, Ye K, Ren H, Hu S, Cao Y. Strain tuned efficient heterostructure photoelectrodes. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.08.062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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17
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Zhang H, Sun S, Shang X, Guo B, Li X, Chen X, Jiang S, Zhang H, Ågren H, Zhang W, Wang G, Lu C, Fu S. Ultrafast photonics applications of emerging 2D-Xenes beyond graphene. NANOPHOTONICS (BERLIN, GERMANY) 2022; 11:1261-1284. [PMID: 39634618 PMCID: PMC11501453 DOI: 10.1515/nanoph-2022-0045] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Revised: 03/11/2022] [Accepted: 03/13/2022] [Indexed: 12/07/2024]
Abstract
Driven by new two-dimensional materials, great changes and progress have taken place in the field of ultrafast photonics in recent years. Among them, the emerging single element two-dimensional materials (Xenes) have also received much attention due to their special physical and photoelectric properties including tunable broadband nonlinear saturable absorption, ultrafast carrier recovery rate, and ultrashort recovery time. In this review, the preparation methods of Xenes and various integration strategies are detailedly introduced at first. Then, we summarize the outcomes achieved by Xenes-based (beyond graphene) fiber lasers and make classifications based on the characteristics of output pulses according to the materials characterization and nonlinear optical absorption properties. Finally, an outlook of the future opportunities and challenges of ultrafast photonics devices based on Xenes and other 2D materials are highlighted, and we hope this review will promote their extensive applications in ultrafast photonics technology.
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Affiliation(s)
- Huanian Zhang
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
- Shandong Ruixing Single Mode Laser Technology Co. Ltd, Zibo 255049, China
| | - Shuo Sun
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
| | - Xinxin Shang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Bo Guo
- Key Laboratory of In-fiber Integrated Optics, Ministry of Education, Harbin Engineering University, Harbin 150001, China
| | - Xiaohui Li
- School of Physics & Information Technology, Shaanxi Normal University, Xian 710119, China
| | - Xiaohan Chen
- School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Qingdao 266237, China
| | - Shouzhen Jiang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Han Zhang
- Shandong Ruixing Single Mode Laser Technology Co. Ltd, Zibo 255049, China
- College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, China
| | - Hans Ågren
- School of Chemistry, Biotechnology and Health Department of Theoretical Chemistry and Biology, KTH Royal Institute of Technology, Stockholm, Sweden
| | - Wenfei Zhang
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
| | - Guomei Wang
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
| | - Cheng Lu
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
| | - Shenggui Fu
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
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18
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Zhang YN, Song ZY, Qiao D, Li XH, Guang Z, Li SP, Zhou LB, Chen XH. 2D van der Waals materials for ultrafast pulsed fiber lasers: review and prospect. NANOTECHNOLOGY 2021; 33:082003. [PMID: 34731847 DOI: 10.1088/1361-6528/ac3611] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
2D van der Waals materials are crystals composed of atomic layers, which have atomic thickness scale layers and rich distinct properties, including ultrafast optical response, surface effects, light-mater interaction, small size effects, quantum effects and macro quantum tunnel effects. With the exploration of saturable absorption characteristic of 2D van der Waals materials, a series of potential applications of 2D van der Waals materials as high threshold, broadband and fast response saturable absorbers (SAs) in ultrafast photonics have been proposed and confirmed. Herein, the photoelectric characteristics, nonlinear characteristic measurement technique of 2D van der Waals materials and the preparation technology of SAs are systematically described. Furthermore, the ultrafast pulsed fiber lasers based on classical 2D van der Waals materials including graphene, transition metal chalcogenides, topological insulators and black phosphorus have been fully summarized and analyzed. On this basis, opportunities and directions in this field, as well as the research results of ultrafast pulsed fiber lasers based on the latest 2D van der Waals materials (such as PbO, FePSe3, graphdiyne, bismuthene, Ag2S and MXene etc), are reviewed and summarized.
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Affiliation(s)
- Ya-Ni Zhang
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Zhuo-Ying Song
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Dun Qiao
- University of South Wales, Wireless and Optoelectronics Research and Innovation Centre, Faculty of Computing, Engineering and Science, Pontypridd CF37 1DL, United Kingdom
| | - Xiao-Hui Li
- Shaanxi Normal University, College of Physics and Information Technology, Xi'an, Shaanxi, 710119, People's Republic of China
| | - Zhe Guang
- School of Physics, Georgia Institute of Technology, 837 State Street, Atlanta, GA 30332, United States of America
- School of Computer Science, Georgia Institute of Technology, 266 Ferst Drive, Atlanta, GA 30332, United States of America
| | - Shao-Peng Li
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Li-Bin Zhou
- Shaanxi University of Science & Technology, Department of Physics, Xi'an, Shaanxi, 710021, People's Republic of China
| | - Xiao-Han Chen
- Shandong University, School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Jinan, Shandong, 250100, People's Republic of China
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19
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Wang Y, Wang Y, Dong Y, Zhou L, Wei H, Long M, Xiao S, He J. The nonlinear optical transition bleaching in tellurene. NANOSCALE 2021; 13:15882-15890. [PMID: 34519753 DOI: 10.1039/d1nr03639d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
To date, outstanding linear and nonlinear optical properties of tellurene, caused by multiple two-dimensional (2D) phases and optical anisotropy, have attracted considerable interest for potential nanophotonics applications. In this work, the ultrafast nonlinear optical (NLO) properties of α-tellurene have been studied via Z-scan and pump-probe techniques at a broadband spectral region. Typical saturable absorption and band filling effects are observed in tellurene due to the Pauli exclusion principle. Analysis using density functional theory (DFT) computation shows the enhancements in NLO response within the ultraviolet-visible absorption spectral region are owing to the increased optical intraband transition in tellurene. Moreover, the effects of varying the photon energy of the probe pulse were explored. Our results indicated that probe pulses with higher photon energies can make smaller differential transmission signal, this effect is found to be negatively correlated with calculated joint density of states (JDOS). These results offer insights into the intrinsic photophysics of 2D tellurene, driving its applications in photonic and optoelectronic fields.
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Affiliation(s)
- Yiduo Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Yingwei Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Yulan Dong
- Key Laboratory of Hunan Province for Statistical Learning and Intelligent Computation, Mathematics and Statistics, Hunan University of Technology and Business, Changsha, Hunan 410205, China.
| | - Li Zhou
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Hao Wei
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Mengqiu Long
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Si Xiao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
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20
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Zheng W, Li Y, Liu M, Lee LYS. Few-Layer Tellurium: Cathodic Exfoliation and Doping for Collaborative Hydrogen Evolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007768. [PMID: 33738956 DOI: 10.1002/smll.202007768] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Revised: 02/05/2021] [Indexed: 06/12/2023]
Abstract
2D tellurium is a suitable electrocatalyst support that can assist electron transport while hosting active sites, yet its production remains challenging. Herein, a cathodic exfoliation method that can exfoliate Te crystal directly to Te nanosheets at low potential, also enabling simultaneous transition metal doping on Te nanosheet surface is presented. In situ Raman spectra and ex situ characterizations reveal that the cathodic exfoliation relies on the electrostatic repulsion between Te flakes covered with in situ generated ditelluride (Te2 2- ) anions. The Te2 2- anions can anchor metal ions to the surface, and the doping concentration can be tuned by adjusting the concentration of metal ion in the electrolyte. The metal-doped Te nanosheets exhibit highly improved hydrogen evolution activities. In particular, Pt-doped Te outperforms polycrystalline Pt at high overpotential. A collaborative hydrogen production mechanism via Volmer-Heyrovsky pathway is suggested: Te2 2- adsorbs protons and assists the mass transfer to adjacent Pt atoms where the protons are reduced and released as hydrogen.
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Affiliation(s)
- Weiran Zheng
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Yong Li
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Mengjie Liu
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Lawrence Yoon Suk Lee
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
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21
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Wang H, Mao Y, Kislyakov IM, Dong N, Chen C, Wang J. Anisotropic Raman scattering and intense broadband second-harmonic generation in tellurium nanosheets. OPTICS LETTERS 2021; 46:1812-1815. [PMID: 33857076 DOI: 10.1364/ol.419976] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2021] [Accepted: 03/12/2021] [Indexed: 06/12/2023]
Abstract
Tellurium (Te) is a novel elementary material, which has recently attracted extensive attention due to its intriguing physical properties, such as topological, thermoelectric, and photoelectric properties. Further study on Te crystal structures will help to understand its properties and facilitate its application. Here, the angle-resolved polarized Raman spectroscopy has been employed to study Te crystal symmetry. Three different Raman vibration modes were obtained, each of which possess a different polarization dependence. Furthermore, it is revealed that Te nanosheets show a second-order harmonic response over a wide spectrum and have the greatest conversion efficiency at an excitation wavelength of 880 nm. Its second-order nonlinear susceptibility is estimated to be 2049pmV-1. This substantial nonlinear optical response endows Te nanosheets with the potential for developing nonlinear photonic and optoelectronic nanodevices with high efficiency.
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22
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An D, Fu J, Xie Z, Xing C, Zhang B, Wang B, Qiu M. Progress in the therapeutic applications of polymer-decorated black phosphorus and black phosphorus analog nanomaterials in biomedicine. J Mater Chem B 2021; 8:7076-7120. [PMID: 32648567 DOI: 10.1039/d0tb00824a] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Wonderful black phosphorus (BP) and some BP analogs (BPAs) have been increasingly studied for their biomedical applications owing to their fascinating properties and biodegradability, but opportunities and challenges have always coexisted in their study. Poor stability upon exposure to the natural environment is the major obstacle hampering their in vivo applications. BP/polymer and BPAs/polymer nanocomposites can not only efficiently prevent their oxidation and aggregation but also exhibit "biological activity" due to synergistic effects. In this review, we briefly describe the synthesis methods and stability strategies of BP/polymer and BPAs/polymer. Then, advances pertaining to their exciting therapeutic applications in various fields are systematically introduced, such as cancer therapy (phototherapy, drug delivery, and synergistic immunotherapy), bone regeneration, and neurogenesis. Some challenges for future clinical trials and possible directions for further study are finally discussed.
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Affiliation(s)
- Dong An
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. and Key Laboratory of Marine Chemistry Theory and Technology (Ocean University of China), Ministry of Education, Qingdao, 266100, P. R. China.
| | - Jianye Fu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. and Key Laboratory of Marine Chemistry Theory and Technology (Ocean University of China), Ministry of Education, Qingdao, 266100, P. R. China.
| | - Zhongjian Xie
- Shenzhen International Institute for Biomedical Research, Shenzhen 518116, P. R. China
| | - Chenyang Xing
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
| | - Bin Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
| | - Bing Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
| | - Meng Qiu
- Key Laboratory of Marine Chemistry Theory and Technology (Ocean University of China), Ministry of Education, Qingdao, 266100, P. R. China.
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23
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Wu J, Ma H, Yin P, Ge Y, Zhang Y, Li L, Zhang H, Lin H. Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000053] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Jianghong Wu
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Hui Ma
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
| | - Peng Yin
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yanqi Ge
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Han Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Hongtao Lin
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
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Tareen AK, Khan K, Aslam M, Zhang H, Liu X. Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications. NANOSCALE 2021; 13:510-552. [PMID: 33404570 DOI: 10.1039/d0nr07444f] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
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Affiliation(s)
- Ayesha Khan Tareen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China. and Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China. and School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan (DGUT), Dongguan, 523808, Guangdong Province, P. R. China and Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Muhammad Aslam
- Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Xinke Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
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Wang Y, Wang C, Zhang F, Guo J, Ma C, Huang W, Song Y, Ge Y, Liu J, Zhang H. Recent advances in real-time spectrum measurement of soliton dynamics by dispersive Fourier transformation. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2020; 83:116401. [PMID: 32998129 DOI: 10.1088/1361-6633/abbcd7] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Mode-locking lasers have not only produced huge economic benefits in industrial fields and scientific research, but also provided an excellent platform to study diverse soliton phenomena. However, the real-time characterization of the ultrafast soliton dynamics remains challenging for traditional electronic instruments due to their relatively low response bandwidth and slow scan rate. Consequently, it is urgent for researchers to directly observe these ultrafast evolution processes, rather than just indirectly understand them from numerical simulations or averaged measurement data. Fortunately, dispersive Fourier transformation (DFT) provides a powerful real-time measurement technique to overcome the speed limitations of traditional electronic measurement devices by mapping the frequency spectrum onto the temporal waveform. In this review, the operation principle of DFT is discussed and the recent progress in characterizing the ultrafast transient soliton dynamics of mode-locking lasers is summarized, including soliton explosions, soliton molecules, noise-like pulses, rogue waves, and mode-locking buildup processes.
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Affiliation(s)
- Yunzheng Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
- Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372 Singapore
| | - Cong Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Feng Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Jia Guo
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Chunyang Ma
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Weichun Huang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yufeng Song
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yanqi Ge
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Jie Liu
- Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Han Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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Shu Y, Guo J, Fan T, Xu Y, Guo P, Wang Z, Wu L, Ge Y, Lin Z, Ma D, Wei S, Li J, Zhang H, Chen W. Two-Dimensional Black Arsenic Phosphorus for Ultrafast Photonics in Near- and Mid-Infrared Regimes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46509-46518. [PMID: 32940461 DOI: 10.1021/acsami.0c12408] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Black arsenic phosphorus (b-AsP), as one kind of novel two-dimensional (2D) materials, bridges the band gap between black phosphorus and graphene. Thanks to its great advantages, including high carrier mobility, excellent in-plane anisotropy, and broad tunability band gap, b-AsP has aroused great interest in fields of photonics and photoelectronics. In this paper, ultrathin 2D b-AsP nanomaterials were fabricated by the liquid-phase exfoliation method, and their strong broadband linear and nonlinear absorptions were characterized by ultraviolet-visible-infrared and Z-scan technology. The experimental determination of the nonlinear absorption coefficient and low saturation intensity of b-AsP were -0.23 cm/GW and 3.336 GW/cm2, respectively. Based on density functional theory, the partial charge density and band structure at the conduction band minimum and valence band maximum were calculated, which further proves the excellent optical properties of 2D b-AsP. By first using 2D b-AsP as a novel saturable absorber in both erbium-doped and thulium-doped fiber lasers, mode-locked soliton pulses can stably operate at 1.5 and 2 μm. The laser pulses generated by 2D b-AsP possess higher stability to resist self-splitting than those generated by other 2D material-based mode-lockers. These experimental results highlight that 2D b-AsP has great application potential as a novel optical material in ultrafast photonics from near- to mid-infrared regimes.
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Affiliation(s)
- Yiqing Shu
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
- Faculty of Information Technology, Macau University of Science and Technology, Macao 519020, PR China
| | - Jia Guo
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Taojian Fan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Yijun Xu
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Penglai Guo
- Faculty of Information Technology, Macau University of Science and Technology, Macao 519020, PR China
| | - Zhenhong Wang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Leiming Wu
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
- Faculty of Information Technology, Macau University of Science and Technology, Macao 519020, PR China
| | - Yanqi Ge
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Zhitao Lin
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
- Faculty of Information Technology, Macau University of Science and Technology, Macao 519020, PR China
| | - Dingtao Ma
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
- Faculty of Information Technology, Macau University of Science and Technology, Macao 519020, PR China
| | - Songrui Wei
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Jianqing Li
- Faculty of Information Technology, Macau University of Science and Technology, Macao 519020, PR China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
| | - Weicheng Chen
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
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Gong Y, Lin Z, Chen YX, Khan Q, Wang C, Zhang B, Nie G, Xie N, Li D. Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges. NANO-MICRO LETTERS 2020; 12:174. [PMID: 34138169 PMCID: PMC7770737 DOI: 10.1007/s40820-020-00515-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/04/2020] [Indexed: 05/25/2023]
Abstract
In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.
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Affiliation(s)
- Youning Gong
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhitao Lin
- Faculty of Information Technology, Macau University of Science and Technology, Macau, 519020, People's Republic of China
| | - Yue-Xing Chen
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Qasim Khan
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
| | - Cong Wang
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guohui Nie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ni Xie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Delong Li
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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Song Y, You K, Zhao J, Huang D, Chen Y, Xing C, Zhang H. A nano-lateral heterojunction of selenium-coated tellurium for infrared-band soliton fiber lasers. NANOSCALE 2020; 12:15252-15260. [PMID: 32643712 DOI: 10.1039/d0nr02548h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, ultrafast fiber lasers based on 2D selenium-coated tellurium nanosheets in the infrared band are reported. 2D selenium-coated tellurium as a mode locker is shown with broadband saturable absorption and is capable of supporting ultra-stable pulse trains with several hundred-femtosecond pulse widths in the laser cavity. In particular, the as-fabricated 2D selenium-coated tellurium based fiber laser source operating in the communication band (1.5 μm) exhibits the vector pulse property, which supports the study of the vector soliton in ultrafast fiber lasers. The pulse duration of vector solitons is as short as 800 fs. The 2D selenium-coated tellurium is also available for a mode locked fiber laser operating at 1 μm. The laser oscillator has a pulse duration of several picoseconds and the pulse train is ultra-stable after an amplification to 100 mW, which is a promising seed source in the chirped-pulse amplification system in the future.
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Affiliation(s)
- Yufeng Song
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Kaixi You
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Jinlai Zhao
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Dazhou Huang
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Yunxiang Chen
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Chenyang Xing
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Han Zhang
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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Reduced Graphene Oxide-Silver Nanoparticles for Optical Pulse Generation in Ytterbium- and Erbium-Doped Fiber Lasers. Sci Rep 2020; 10:9408. [PMID: 32523079 PMCID: PMC7287082 DOI: 10.1038/s41598-020-66253-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Accepted: 05/15/2020] [Indexed: 11/08/2022] Open
Abstract
This work has demonstrated the potential of a reduced graphene oxide silver/polyvinyl alcohol (rGO-Ag/PVA) film as a saturable absorber (SA) in ytterbium and erbium based Q-switched optical fiber lasers. The facile hydrothermal method was used to synthesize the nanocomposite between rGO and Ag nanoparticles. This was followed by a simple solution method to form the rGO-Ag film using PVA as the host polymer. From nonlinear absorption characterization, the rGO-Ag/PVA SA was determined to have a modulation depth of 30%, a nonsaturable loss of 70%, and a saturable intensity of 0.63 kW/cm2. Stable self-starting Q-switched pulses were obtained at the threshold pump power of 72.76 mW and 18.63 mW in the ytterbium-doped (YDFL) and erbium-doped fiber laser (EDFL) cavities respectively. The center operating wavelengths were observed at 1044.4 nm and 1560 nm for the two cavities. The shortest pulse width and maximum repetition rate of the YDFL and EDFL were 1.10 µs and 62.10 kHz and 1.38 µs and 76.63 kHz respectively. This work has demonstrated that the rGO-Ag/PVA film is suitable as an SA for pulse generation in the 1.0 and 1.5 μm regions and would have many potential photonics applications.
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Zhang W, Wang G, Xing F, Man Z, Zhang F, Han K, Zhang H, Fu S. Passively Q-switched and mode-locked erbium-doped fiber lasers based on tellurene nanosheets as saturable absorber. OPTICS EXPRESS 2020; 28:14729-14739. [PMID: 32403508 DOI: 10.1364/oe.392944] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2020] [Accepted: 04/24/2020] [Indexed: 06/11/2023]
Abstract
Various two-dimensional (2D) materials show unique optical properties and excellent performance in acting as saturable absorber (SA) for demonstrating all-fiber ultra-fast lasers. Tellurene, as a new-fashioned few-layer 2D monoelemental material, was designed as an excellent saturable absorber to achieve Q-switched and mode-locked operations within erbium-doped fiber (EDF) lasers in our experiment. High-quality tellurene-based SA with a modulation depth of 0.97% was obtained by blending few-layer tellurene nanosheet solution prepared by liquid phase exfoliation method and the polyvinyl alcohol (PVA) solution. Inserting the SA into the EDF laser cavity by sandwiching the tellurene-PVA film between two fiber ferrules, either the passively Q-switched or the passively mode-locked operations can be obtained. The repetition rate varies from 15.92 to 47.61 kHz, and the pulse duration decreases from 8.915 to 5.196 µs in the passively Q-switched operation. To the best of our knowledge, this is the first demonstration focusing on the modulation application of tellurene in designing Q-switched pulsed laser operations. Additionally, mode-locked operations were also achieved by adjusting the polarization state. The obtained results fully indicate that tellurene can be developed as an efficient SA for pulsed fiber lasers.
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Li F, Shen T, Wang C, Zhang Y, Qi J, Zhang H. Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics. NANO-MICRO LETTERS 2020; 12:106. [PMID: 34138113 PMCID: PMC7770727 DOI: 10.1007/s40820-020-00439-9] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2020] [Accepted: 03/20/2020] [Indexed: 05/07/2023]
Abstract
The development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic-electric performance. The strain-engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain-engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.
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Affiliation(s)
- Feng Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Cong Wang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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Shi Z, Cao R, Khan K, Tareen AK, Liu X, Liang W, Zhang Y, Ma C, Guo Z, Luo X, Zhang H. Two-Dimensional Tellurium: Progress, Challenges, and Prospects. NANO-MICRO LETTERS 2020; 12:99. [PMID: 34138088 PMCID: PMC7770852 DOI: 10.1007/s40820-020-00427-z] [Citation(s) in RCA: 72] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2020] [Accepted: 03/11/2020] [Indexed: 05/23/2023]
Abstract
Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.
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Affiliation(s)
- Zhe Shi
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Rui Cao
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
- School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan, 523808, Guangdong, People's Republic of China
| | - Ayesha Khan Tareen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Xiaosong Liu
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Weiyuan Liang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Ye Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Chunyang Ma
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Zhinan Guo
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
| | - Xiaoling Luo
- Department of Ophthalmology, Shenzhen People's Hospital, Second Clinical Medical College of Jinan University, First Affiliated Hospital of Southern University of Science and Technology, Shenzhen, 518020, Guangdong, People's Republic of China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
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Luo J, Fan JB, Wang S. Recent Progress of Microfluidic Devices for Hemodialysis. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1904076. [PMID: 31535786 DOI: 10.1002/smll.201904076] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2019] [Revised: 08/31/2019] [Indexed: 06/10/2023]
Abstract
Microfluidic hemodialysis techniques have recently attracted great attention in the treatment of kidney disease due to their advantages of portability and wearability as well as their great potential for replacing clinical hospital-centered blood purification with continuous in-home hemodialysis. This Review summarizes the recent progress in microfluidic devices for hemodialysis. First, the history of kidney-inspired hemodialysis is introduced. Then, recent achievements in the preparation of microfluidic devices and hemodialysis nanoporous membrane materials are presented and categorized. Subsequently, attention is drawn to the recent progress of nanoporous membrane-based microfluidic devices for hemodialysis. Finally, the challenges and opportunities of hemodialysis microfluidic devices in the future are also discussed. This Review is expected to provide a comprehensive guide for the design of hemodialysis microfluidic devices that are closely related to clinical applications.
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Affiliation(s)
- Jing Luo
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, CAS Center for Excellence in Nanoscience, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jun-Bing Fan
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, CAS Center for Excellence in Nanoscience, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shutao Wang
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, CAS Center for Excellence in Nanoscience, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Xing C, Huang D, Chen S, Huang Q, Zhou C, Peng Z, Li J, Zhu X, Liu Y, Liu Z, Chen H, Zhao J, Li J, Liu L, Cheng F, Fan D, Zhang H. Engineering Lateral Heterojunction of Selenium-Coated Tellurium Nanomaterials toward Highly Efficient Solar Desalination. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900531. [PMID: 31592110 PMCID: PMC6774058 DOI: 10.1002/advs.201900531] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Revised: 07/12/2019] [Indexed: 05/29/2023]
Abstract
Herein, a core-shell tellurium-selenium (Te-Se) nanomaterial with polymer-tailed and lateral heterojunction structures is developed as a photothermal absorber in a bionic solar-evaporation system. It is further revealed that the amorphous Se shell surrounds the crystalline Te core, which not only protects the Te phase from oxidation but also serves as a natural barrier to life entities. The core (Te)-shell (Se) configuration thus exhibits robust stability enhanced by 0.05 eV per Se atom and excellent biocompatibility. Furthermore, high energy efficiencies of 90.71 ± 0.37% and 86.14 ± 1.02% and evaporation rates of 12.88 ± 0.052 and 1.323 ± 0.015 kg m-2 h-1 are obtained under 10 and 1 sun for simulated seawater, respectively. Importantly, no salting out is observed in salt solutions, and the collected water under natural light irradiation possesses extremely low ion concentrations of Na+, K+, Ca2+, and Mg2+ relative to real seawater. Considering the tunable electronic structures, biocompatibilities, and modifiable broadband absorption of the solar spectrum of lateral heterojunction nanomaterials of Te-Se, the way is paved to engineering 2D semiconductor materials with supporting 3D porous hydrophilic materials for application in solar desalination, wastewater treatment, and biomedical ventures.
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Affiliation(s)
- Chenyang Xing
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
- Center for Stretchable Electronics and Nanoscale SystemsKey Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Dazhou Huang
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Shiyou Chen
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Qichen Huang
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
- College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhen518060China
| | - Chuanhong Zhou
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Zhengchun Peng
- Center for Stretchable Electronics and Nanoscale SystemsKey Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Jiagen Li
- School of Science and EngineeringThe Chinese University of Hong KongShenzhen518172China
| | - Xi Zhu
- School of Science and EngineeringThe Chinese University of Hong KongShenzhen518172China
- Shenzhen Institute of Artificial Intelligence and Robotics for SocietyShenzhenGuangdong518172China
| | - Yizhen Liu
- College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhen518060China
| | - Zhipeng Liu
- College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhen518060China
| | - Houkai Chen
- Nanophotonics Research CenterShenzhen Key Laboratory of Micro‐Scale Optical Information TechnologyShenzhen UniversityShenzhen518060China
| | - Jinlai Zhao
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Jiangqing Li
- Faculty of Information TechnologyMacau University of Science and TechnologyAvenida Wai LongTaipaMacau999078China
| | - Liping Liu
- Department of Hepatobiliary and Pancreatic SurgeryShenzhen People's HospitalSecond Clinical Medical College of Jinan UniversityShenzhen518060China
| | - Faliang Cheng
- Dongguan University of TechnologyDongguan523808China
| | - Dianyuan Fan
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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Zhang F, Liu G, Wang Z, Tang T, Wang X, Wang C, Fu S, Xing F, Han K, Xu X. Broadband nonlinear absorption properties of two-dimensional hexagonal tellurene nanosheets. NANOSCALE 2019; 11:17058-17064. [PMID: 31506650 DOI: 10.1039/c9nr03701b] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two dimensional (2D) Group-VI Te, tellurene, was successfully exfoliated using a liquid phase exfoliation (LPE) method. The prepared tellurene nanosheets possessed a thickness of 4.3-4.6 nm and the lateral dimension ranged from hundreds of nanometers to several microns. The broadband nonlinear absorption properties were explored for the first time (as we know) using a z-scan method with the laser photon energy in the range of 0.73-2.76 eV, corresponding to the near-infrared-visible waveband. Tellurene nanosheets exhibited excellent broadband saturated absorption and optical limiting behaviors. The low saturable intensity and the large modulation depth for saturated absorption with low energy photon excitation highlight the superiority of the infrared band as a saturable absorber. In addition, with large energy excitation, tellurene manifested an apparent two photon absorption behavior in the visible band, thus it can be used as an optical limiting material. By adopting the mode-locking technique, this high-quality saturable absorber can be applied in all-solid-state or fiber lasers to generate ultra-short and ultra-high peak power laser pulses. Meanwhile, tellurene as an optical limiting material can protect the sensitive optical devices and human eyes. So, our work not only demonstrates that tellurene is a promising broadband nonlinear optical material, but also implies its application prospects in optics.
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Affiliation(s)
- Fang Zhang
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China
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