1
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Qing X, Xiao Q, Wang D, Yang G, Chen B, Zhang C, Li M, Liu D, Lei W. MXene-enabled organic synaptic fiber for ultralow-power and biochemical-mediated neuromorphic transistor. Biosens Bioelectron 2025; 281:117443. [PMID: 40239473 DOI: 10.1016/j.bios.2025.117443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2024] [Revised: 03/21/2025] [Accepted: 04/02/2025] [Indexed: 04/18/2025]
Abstract
Fibrous bioelectronic provides an intrinsically accessible platform for artificial nerve and real-time physiological perception. However, advanced fiber-based artificial synapse remains a challenge due to the contradictory conductance demands for brain-like energy consumption and ultrasensitive biomarker perception. Herein, taking advantage of the highly accessible surface, rich functional groups and excellent electrical conductivity, a hierarchical nanostructured MXene (Ti3C2Tx)-enabled artificial neurofiber was proposed for neuromorphic organic electrochemical transistors (OECT) with biomolecule-mediated plasticity. The device can successfully emulate the typical short-term/long-term synaptic behaviors in both protonic gel electrolyte and aprotic ionic liquid gel electrolyte, with a minimum energy consumption of 1.21 fJ/spike and 0.10 fJ/spike. Uric acid (UA), a neurocognitive function and acute joint pain involved biomarker, and its specific enzyme were investigated to simulate the neurotransmitter-receptor induced postsynaptic synaptic weight modulation and pain sensitization process. The OECT showed excellent sensitivity and anti-interference performance. Moreover, selective and concentration-depended synaptic behaviors were successfully achieved in both phosphate-buffered saline (PBS) and artificial urine environments with significant memory effects. This study provided a potential to combine artificial neuromorphic devices with biological sensory neural networks.
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Affiliation(s)
- Xing Qing
- Key Laboratory of Textile Fiber and Products (Wuhan Textile University), Ministry of Education, Wuhan Textile University, Wuhan, 430200, China
| | - Qing Xiao
- Key Laboratory of Textile Fiber and Products (Wuhan Textile University), Ministry of Education, Wuhan Textile University, Wuhan, 430200, China
| | - Dong Wang
- Key Laboratory of Textile Fiber and Products (Wuhan Textile University), Ministry of Education, Wuhan Textile University, Wuhan, 430200, China.
| | - Guoliang Yang
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Victoria, 3216, Australia
| | - Bin Chen
- Key Laboratory of Textile Fiber and Products (Wuhan Textile University), Ministry of Education, Wuhan Textile University, Wuhan, 430200, China
| | - Caoyang Zhang
- Key Laboratory of Textile Fiber and Products (Wuhan Textile University), Ministry of Education, Wuhan Textile University, Wuhan, 430200, China
| | - Mufang Li
- Key Laboratory of Textile Fiber and Products (Wuhan Textile University), Ministry of Education, Wuhan Textile University, Wuhan, 430200, China
| | - Dan Liu
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Victoria, 3216, Australia.
| | - Weiwei Lei
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Victoria, 3216, Australia.
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2
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Dong W, Wang S, Zhao B, Xu C, Liu Y, An C, Zhang X, Qi M, Han Y, Geng Y. Planar p-n Junction Engineering toward Reconfigurable Organic Synaptic Transistors for High-Accuracy Neuromorphic Recognition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2502740. [PMID: 40401401 DOI: 10.1002/smll.202502740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2025] [Revised: 04/17/2025] [Indexed: 05/23/2025]
Abstract
Synaptic transistors are pivotal for hardware-level neuromorphic computing. However, the lack of switching behavior diversity has limited the implementation of advanced computing tasks, which are constrained by traditional interfacial or uncontrollable materials engineering. Here, a universal planar p-n junction structure is devised, with rational alignment of energy levels between crosslinkable p-type poly(indacenodithiophene-alt-benzothiadizole)-based conjugated polymer with hydroxyl groups at the ends of its side chains (OH-IDTBT-10%) and different n-type conjugated polymers, fabricated through efficient solution processing. This structure enables reconfigurable switching of p-type and n-type carrier transport by modifying the transistor architecture, along with significant non-volatile memory and synaptic plasticity. By strategically adjusting crosslinkers, a large memory window up to 48.5 V is achieved, sustained performance over 500 cycles, and a diverse array of synaptic behaviors modulated by electrical pulses. The underlying mechanism involves quantum well-like structures and discrete physical charge traps at the bilayer interface. The versatility of the strategy is proven across different n-type polymer systems. An artificial neural network (ANN) constructed by these devices affords a remarkably high facial recognition accuracy of 97.58% using the Yale Face Database with minimized training epochs of 200. This design provides an opportunity for high performance hardware with diverse synaptic behaviors in advanced neuromorphic computing.
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Affiliation(s)
- Weijia Dong
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Shiyu Wang
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Bin Zhao
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- SINOPEC (Beijing) Research Institute of Chemical Industry Co. Ltd., Beijing, 100013, China
| | - Chenhui Xu
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Yuqian Liu
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China
| | - Chuanbin An
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- State Key Laboratory of Photovoltaic Science and Technology, Trina Solar, Changzhou, 213031, China
| | - Xuwen Zhang
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Minghao Qi
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Yang Han
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Yanhou Geng
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Science and Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
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3
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Du Y, Yang L, Gong J, Hu J, Liu J, Zhang S, Qu S, Chen J, Lee HS, Xu W. A Monolithic Neuromorphic Device for In-Sensor Tactile Computing. J Phys Chem Lett 2025:5312-5320. [PMID: 40393949 DOI: 10.1021/acs.jpclett.5c00583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2025]
Abstract
To emulate the tactile perception of human skin, the integration of tactile sensors with neuromorphic devices has emerged as a promising approach to achieve near-sensor information processing. Here, we present a monolithic electronic device that seamlessly integrates tactile perception and neuromorphic computing functionalities within a single architecture, with synaptic plasticity directly tunable by tactile inputs. This unique capability stems from our engineered device structure employing SnO2 nanowires as the conductive channel coupled with a pressure-sensitive chitosan layer ionic gating layer. The device demonstrates pressure-dependent memory retention and learning behaviors, effectively mimicking the enhanced cognitive functions observed in humans under stressful conditions. Furthermore, the integrated design exhibits potential for implementing bioinspired electronic systems requiring adaptive tactile information processing.
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Affiliation(s)
- Yi Du
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
| | - Jiahe Hu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiaxin Chen
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Hwa Sung Lee
- Department of Materials Science and Chemical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Republic of Korea
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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4
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Qu S, Yu Q, Jiang C, Zou T, Xu H, Zhang L, Tao M, Zhu Q, Zhang S, Geng C, Yuan M, Noh YY, Xu W. Oxide semiconductor in a neuromorphic chromaticity communication loop for extreme environment exploration. SCIENCE ADVANCES 2025; 11:eadu3576. [PMID: 40378224 DOI: 10.1126/sciadv.adu3576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2024] [Accepted: 04/15/2025] [Indexed: 05/18/2025]
Abstract
Space exploration, particularly in the extreme space environment, has gained increasing attention. Networked robots capable of real-time environmental perception and autonomous collaboration offer a promising alternative for executing complex precision tasks. Consequently, achieving local reliable communication and preparing irradiation-tolerant materials are essential. Here, we demonstrate a cephalopod-inspired neuromorphic loop that enables chromaticity communication between individual near-sensor processing units. A programmatically aligned aluminum zinc oxide nanofiber array was fabricated and used as conductive channels that can withstand prolonged (~104 seconds) and high-dose (~5 × 1015 ions per square centimeter) proton irradiation. The neuromorphic loop, with capabilities in environmental perception, event-driven processing, adaptive learning, and chromaticity communication, enables the self-driven collaboration of robotic hands based on tactile feedback and ensures reliable mobile links for drone flight control. This work pioneers a direction in neuromorphic visible light communication and marks important progress in the field of biomimetic intelligence.
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Affiliation(s)
- Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Qianbo Yu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Honghuan Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Longlong Zhang
- State Key Laboratory of Space Weather, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
| | - Mengze Tao
- State Key Laboratory of Space Weather, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
| | - Qingshan Zhu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Cong Geng
- Department of Chemistry, Nankai University, Tianjin 300071, China
| | - Mingjian Yuan
- Department of Chemistry, Nankai University, Tianjin 300071, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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5
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Chen Y, Xia J, Qu Y, Zhang H, Mei T, Zhu X, Xu G, Li D, Wang L, Liu Q, Xiao K. Ephaptic Coupling in Ultralow-Power Ion-Gel Nanofiber Artificial Synapses for Enhanced Working Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2419013. [PMID: 40059495 DOI: 10.1002/adma.202419013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2024] [Revised: 02/19/2025] [Indexed: 04/24/2025]
Abstract
Neuromorphic devices are designed to replicate the energy-efficient information processing advantages found in biological neural networks by emulating the working mechanisms of neurons and synapses. However, most existing neuromorphic devices focus primarily on functionally mimicking biological synapses, with insufficient emphasis on ion transport mechanisms. This limitation makes it challenging to achieve the complexity and connectivity inherent in biological systems, such as ephaptic coupling. Here, an ionic biomimetic synaptic device based on a flexible ion-gel nanofiber network is proposed, which transmits information and enables ephaptic coupling through capacitance formation by ion transport with an extremely low energy consumption of just 6 femtojoules. The hysteretic ion transport behavior endows the device with synaptic-like memory effects, significantly enhancing the performance of the reservoir computing system for classifying the MNIST handwritten digit dataset and demonstrating high efficiency in edge learning. More importantly, the devices in an array establish communication connections, exhibiting global oscillatory behaviors similar to ephaptic coupling in biological neural networks. This connectivity enables the array to perform working memory tasks, paving the way for developing brain-like systems characterized by high complexity and vast connectivity.
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Affiliation(s)
- Yuanxia Chen
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Junfeng Xia
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Youzhi Qu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Hongjie Zhang
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Tingting Mei
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Xinyi Zhu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Guoheng Xu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Dongyang Li
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Li Wang
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing, 211816, P.R. China
| | - Quanying Liu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Kai Xiao
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
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6
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Jia Z, Zhong W, Zhou K, Zeng W, Li Y, Feng Z, Xue H, Zhao P, Chen X, Wang H, Cai X, Xue S, Zhai Y, Lv Z, Yan Y, Zhang M, Yang X, Ding G, Han ST, Kuo CC, Zhou Y. Two-Dimensional Zeolitic Imidazolate Framework Based Optoelectronic Synaptic Transistor. J Phys Chem Lett 2025; 16:3012-3021. [PMID: 40094623 DOI: 10.1021/acs.jpclett.5c00009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/19/2025]
Abstract
Neuromorphic computing systems that integrate memory and computation offer a solution to the limitations of traditional von Neumann architectures. Optoelectronic synaptic transistors, responding to both optical and electrical signals, enable multifunctional operation with low power consumption. However, challenges such as short data retention and low processing efficiency remain. This study presents an optoelectronic synaptic transistor utilizing two-dimensional (2D) MoS2, 2D zeolitic imidazolate framework (ZIF) Zn2(bim)4, and gold (Au) nanoparticles (NPs) as semiconductor, tunneling layer, and floating gate materials, respectively. By adjusting the tunneling layer thickness, the charge-blocking capacity of Zn2(bim)4 is modulated, improving long-term data retention. The optoelectronic properties of MoS2 and the charge-trapping ability of Au NPs enable the transistor to mimic synaptic behaviors such as postsynaptic current (PSC), long-term potentiation (LTP), and transition from short-term to long-term memory (STM-LTM). This device can also be integrated into an artificial neural network (ANN) for smart healthcare applications, achieving 88.1% accuracy in electrocardiogram classification through optoelectronic dual-mode stimulation.
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Affiliation(s)
- Ziqi Jia
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Wenmin Zhong
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, P. R. China
| | - Wei Zeng
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zihao Feng
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Haozhe Xue
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Pengfei Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Xue Chen
- School of Physics, Changchun Normal University, Changchun 130032, P. R. China
| | - Hongxiang Wang
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Xingke Cai
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shuangmei Xue
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Xueqing Yang
- State Key Laboratory of Radiation Medicine and Protection, School of Radiation Medicine and Protection, Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou 215123, P. R. China
| | - Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong SAR 999077, P. R. China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, P. R. China
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, P. R. China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
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7
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Ma X, Zhou Y, Li R, Zhao S, Zhang M. Ultralow Power Optoelectronic Memtransistors Based on Vertical WS 2/In 2Se 3 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2025; 17:18582-18591. [PMID: 40085138 DOI: 10.1021/acsami.4c21946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/16/2025]
Abstract
Memtransistors composed of 2D van der Waals (vdW) heterostructures are crucial for constructing artificial synaptic devices and realizing neuromorphic computing. The functional integration containing ultralow power, nonvolatile memory, and biomimetic synaptic behavior endows such devices with broad prospects. Here, we develop an optoelectronic memtransistor based on the WS2/In2Se3 vdW heterostructure and realize significant optical and electrical synaptic properties, which can simulate both short-range plasticity (STP) and long-range plasticity (LTP) of biological synapses. Under optical stimulation, the device demonstrates an ultralow power consumption (only 7.7 aJ per spike) significantly lower than biological synapses, indicating the application potential in large-scale neuromorphic hardware. Combining optical and electrical stimuli, we can perform multiple logic operations by controlling the optical and electrical inputs of the WS2/In2Se3-based memtransistor. Besides, simulated recognition utilizing the Modified National Institute of Standards and Technology data set can achieve a recognition accuracy of 85.41%. Notably, this accuracy can remain above 80% even with the introduction of Gaussian noise. These results demonstrate the promising potential of WS2/In2Se3-based memtransistors in future neuromorphic computing.
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Affiliation(s)
- Xiudong Ma
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Yumeng Zhou
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Ru Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, Shandong 266101, China
| | - Shangzhou Zhao
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Mingjia Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment, Ministry of Education, Ocean University of China, Qingdao 266100, China
- Qingdao Key Laboratory of Optics and Optoelectronics, Ocean University of China, Qingdao 266100, China
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8
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Liang Y, Li H, Tang H, Zhang C, Men D, Mayer D. Bioinspired Electrolyte-Gated Organic Synaptic Transistors: From Fundamental Requirements to Applications. NANO-MICRO LETTERS 2025; 17:198. [PMID: 40122950 PMCID: PMC11930914 DOI: 10.1007/s40820-025-01708-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2024] [Accepted: 02/19/2025] [Indexed: 03/25/2025]
Abstract
Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency. Electrolyte-gated organic transistors (EGOTs) offer significant advantages as neuromorphic devices due to their ultra-low operation voltages, minimal hardwired connectivity, and similar operation environment as electrophysiology. Meanwhile, ionic-electronic coupling and the relatively low elastic moduli of organic channel materials make EGOTs suitable for interfacing with biology. This review presents an overview of the device architectures based on organic electrochemical transistors and organic field-effect transistors. Furthermore, we review the requirements of low energy consumption and tunable synaptic plasticity of EGOTs in emulating biological synapses and how they are affected by the organic materials, electrolyte, architecture, and operation mechanism. In addition, we summarize the basic operation principle of biological sensory systems and the recent progress of EGOTs as a building block in artificial systems. Finally, the current challenges and future development of the organic neuromorphic devices are discussed.
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Affiliation(s)
- Yuanying Liang
- Guangdong Artificial Intelligence and Digital Economy Laboratory (Guangzhou), Guangzhou, 510335, People's Republic of China.
| | - Hangyu Li
- Institute of Biological Information Processing, Bioelectronics IBI-3, Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Hu Tang
- Guangzhou Liby Group Co., Ltd, Guangzhou, 510370, People's Republic of China
| | - Chunyang Zhang
- Guangzhou National Laboratory, Guangzhou, 510005, People's Republic of China
| | - Dong Men
- Guangzhou National Laboratory, Guangzhou, 510005, People's Republic of China
| | - Dirk Mayer
- Institute of Biological Information Processing, Bioelectronics IBI-3, Forschungszentrum Jülich, 52425, Jülich, Germany.
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9
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Tian S, Chen X, Ding B. Manipulation of Single Nanowire and its Applications. SMALL METHODS 2025:e2402053. [PMID: 40079072 DOI: 10.1002/smtd.202402053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2024] [Revised: 01/20/2025] [Indexed: 03/14/2025]
Abstract
Micro/nano manipulation of single nanowire has emerged as a popular direction of study in the field of nanotechnology, with promising applications in cutting-edge technologies such as device manufacturing, medical treatment, and nanorobotics. The synthesis of nanowires with controllable length and diameter makes them meet various micro/nano manipulation demands. As manipulation techniques have advanced, including the use of optical tweezers, electric and magnetic fields, mechanical control, and several more control methods, they have demonstrated unique advantages in different application fields. For instance, the application of micro/nano manipulation of single nanowire in device manufacturing, cell drug precision transport, and nanomotors has demonstrated their potential in device development, biomedicine, and precision manufacturing. However, application extension of single nanowire manipulation is still in its infancy. This review systematically sorts out the progress of nanowire synthesis and manipulation and discusses its current research status and prospects in various application fields. It aims to provide a comprehensive reference and guidance for future research and promote the innovative applications of nanowire manipulation technology in a wide range of fields.
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Affiliation(s)
- Siyuan Tian
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Device School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan, 528225, China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, CAS, Shenzhen, 518 055, China
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, 518 055, China
| | - Xinman Chen
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Device School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan, 528225, China
| | - Baofu Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, CAS, Shenzhen, 518 055, China
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, 518 055, China
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10
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Sung MJ, Kim KN, Kim C, Lee HH, Lee SW, Kim S, Seo DG, Zhou H, Lee TW. Organic Artificial Nerves: Neuromorphic Robotics and Bioelectronics. Chem Rev 2025; 125:2625-2664. [PMID: 39983019 DOI: 10.1021/acs.chemrev.4c00571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/23/2025]
Abstract
Neuromorphic electronics are inspired by the human brain's compact, energy-efficient nature and its parallel-processing capabilities. Beyond the brain, the entire human nervous system, with its hierarchical structure, efficiently preprocesses complex sensory information to support high-level neural functions such as perception and memory. Emulating these biological processes, artificial nerve electronics have been developed to replicate the energy-efficient preprocessing observed in human nerves. These systems integrate sensors, artificial neurons, artificial synapses, and actuators to mimic sensory and motor functions, surpassing conventional circuits in sensor-integrated electronics. Organic synaptic transistors (OSTs) are key components in constructing artificial nerves, offering tunable synaptic plasticity for complex sensory processing and the mechanical flexibility required for applications in soft robotics and bioelectronics. Compared to traditional sensor-integrated electronics, early implementations of organic artificial nerves (OANs) incorporating OSTs have demonstrated a higher signal-to-noise ratio, lower power consumption, and simpler circuit designs along with on-device processing capabilities and precise control of actuators and biological limbs, driving progress in neuromorphic robotics and bioelectronics. This paper reviews the materials, device engineering, and system integration of the OAN design, highlights recent advancements in neuromorphic robotics and bioelectronics utilizing the OANs, and discusses current challenges and future research directions.
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Affiliation(s)
- Min-Jun Sung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kwan-Nyeong Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Chunghee Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyun-Haeng Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Seung-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Somin Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Dae-Gyo Seo
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Huanyu Zhou
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, Seoul 08826, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Interdisciplinary Program in Bioengineering, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Republic of Korea
- Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Soft Foundry, Seoul National University, Seoul 08826, Republic of Korea
- SN Display Co. Ltd., Seoul 08826, Republic of Korea
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11
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Wu H, Feng E, Yin H, Zhang Y, Chen G, Zhu B, Yue X, Zhang H, Liu Q, Xiong L. Biomaterials for neuroengineering: applications and challenges. Regen Biomater 2025; 12:rbae137. [PMID: 40007617 PMCID: PMC11855295 DOI: 10.1093/rb/rbae137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2024] [Revised: 10/19/2024] [Accepted: 11/03/2024] [Indexed: 02/27/2025] Open
Abstract
Neurological injuries and diseases are a leading cause of disability worldwide, underscoring the urgent need for effective therapies. Neural regaining and enhancement therapies are seen as the most promising strategies for restoring neural function, offering hope for individuals affected by these conditions. Despite their promise, the path from animal research to clinical application is fraught with challenges. Neuroengineering, particularly through the use of biomaterials, has emerged as a key field that is paving the way for innovative solutions to these challenges. It seeks to understand and treat neurological disorders, unravel the nature of consciousness, and explore the mechanisms of memory and the brain's relationship with behavior, offering solutions for neural tissue engineering, neural interfaces and targeted drug delivery systems. These biomaterials, including both natural and synthetic types, are designed to replicate the cellular environment of the brain, thereby facilitating neural repair. This review aims to provide a comprehensive overview for biomaterials in neuroengineering, highlighting their application in neural functional regaining and enhancement across both basic research and clinical practice. It covers recent developments in biomaterial-based products, including 2D to 3D bioprinted scaffolds for cell and organoid culture, brain-on-a-chip systems, biomimetic electrodes and brain-computer interfaces. It also explores artificial synapses and neural networks, discussing their applications in modeling neural microenvironments for repair and regeneration, neural modulation and manipulation and the integration of traditional Chinese medicine. This review serves as a comprehensive guide to the role of biomaterials in advancing neuroengineering solutions, providing insights into the ongoing efforts to bridge the gap between innovation and clinical application.
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Affiliation(s)
- Huanghui Wu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Enduo Feng
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Huanxin Yin
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Yuxin Zhang
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Guozhong Chen
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Beier Zhu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Xuezheng Yue
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haiguang Zhang
- Rapid Manufacturing Engineering Center, School of Mechatronical Engineering and Automation, Shanghai University, Shanghai 200444, China
- Shanghai Key Laboratory of Intelligent Manufacturing and Robotics, Shanghai University, Shanghai 200072, China
| | - Qiong Liu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200438, China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
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12
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Mojumder MRH, Kim S, Yu C. Soft Artificial Synapse Electronics. RESEARCH (WASHINGTON, D.C.) 2025; 8:0582. [PMID: 39877465 PMCID: PMC11772661 DOI: 10.34133/research.0582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2024] [Revised: 12/07/2024] [Accepted: 12/22/2024] [Indexed: 01/31/2025]
Abstract
Soft electronics, known for their bendable, stretchable, and flexible properties, are revolutionizing fields such as biomedical sensing, consumer electronics, and robotics. A primary challenge in this domain is achieving low power consumption, often hampered by the limitations of the conventional von Neumann architecture. In response, the development of soft artificial synapses (SASs) has gained substantial attention. These synapses seek to replicate the signal transmission properties of biological synapses, offering an innovative solution to this challenge. This review explores the materials and device architectures integral to SAS fabrication, emphasizing flexibility and stability under mechanical deformation. Various architectures, including floating-gate dielectric, ferroelectric-gate dielectric, and electrolyte-gate dielectric, are analyzed for effective weight control in SASs. The utilization of organic and low-dimensional materials is highlighted, showcasing their plasticity and energy-efficient operation. Furthermore, the paper investigates the integration of functionality into SASs, particularly focusing on devices that autonomously sense external stimuli. Functionalized SASs, capable of recognizing optical, mechanical, chemical, olfactory, and auditory cues, demonstrate promising applications in computing and sensing. A detailed examination of photo-functionalized, tactile-functionalized, and chemoreception-functionalized SASs reveals their potential in image recognition, tactile sensing, and chemosensory applications, respectively. This study highlights that SASs and functionalized SAS devices hold transformative potential for bioelectronics and sensing for soft-robotics applications; however, further research is necessary to address scalability, long-time stability, and utilizing functionalized SASs for prosthetics and in vivo applications through clinical adoption. By providing a comprehensive overview, this paper contributes to the understanding of SASs, bridging research gaps and paving the way toward transformative developments in soft electronics, biomimicking and biointegrated synapse devices, and integrated systems.
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Affiliation(s)
- Md. Rayid Hasan Mojumder
- Department of Electrical Engineering,
The Pennsylvania State University, University Park, PA 16802, USA
| | - Seongchan Kim
- Department of Electrical and Systems Engineering,
University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Cunjiang Yu
- Department of Electrical and Computer Engineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Department of Materials Science and Engineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Department of Mechanical Science and Engineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Department of Bioengineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Materials Research Laboratory,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Beckman Institute for Advanced Science and Technology,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Nick Holonyak Micro and Nanotechnology Laboratory,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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13
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Zhang X, Wang C, Pi X, Li B, Ding Y, Yu H, Sun J, Wang P, Chen Y, Wang Q, Zhang C, Meng X, Chen G, Wang D, Wang Z, Mu Z, Song H, Zhang J, Niu S, Han Z, Ren L. Bionic Recognition Technologies Inspired by Biological Mechanosensory Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2418108. [PMID: 39838736 DOI: 10.1002/adma.202418108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2024] [Revised: 12/23/2024] [Indexed: 01/23/2025]
Abstract
Mechanical information is a medium for perceptual interaction and health monitoring of organisms or intelligent mechanical equipment, including force, vibration, sound, and flow. Researchers are increasingly deploying mechanical information recognition technologies (MIRT) that integrate information acquisition, pre-processing, and processing functions and are expected to enable advanced applications. However, this also poses significant challenges to information acquisition performance and information processing efficiency. The novel and exciting mechanosensory systems of organisms in nature have inspired us to develop superior mechanical information bionic recognition technologies (MIBRT) based on novel bionic materials, structures, and devices to address these challenges. Herein, first bionic strategies for information pre-processing are presented and their importance for high-performance information acquisition is highlighted. Subsequently, design strategies and considerations for high-performance sensors inspired by mechanoreceptors of organisms are described. Then, the design concepts of the neuromorphic devices are summarized in order to replicate the information processing functions of a biological nervous system. Additionally, the ability of MIBRT is investigated to recognize basic mechanical information. Furthermore, further potential applications of MIBRT in intelligent robots, healthcare, and virtual reality are explored with a view to solve a range of complex tasks. Finally, potential future challenges and opportunities for MIBRT are identified from multiple perspectives.
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Affiliation(s)
- Xiangxiang Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Changguang Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Xiang Pi
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Bo Li
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
| | - Yuechun Ding
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Hexuan Yu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Jialue Sun
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Pinkun Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - You Chen
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Qun Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Changchao Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Xiancun Meng
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Guangjun Chen
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Dakai Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Ze Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Zhengzhi Mu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Honglie Song
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Junqiu Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Shichao Niu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Zhiwu Han
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Luquan Ren
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
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14
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2400332. [PMID: 38739927 PMCID: PMC11733831 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research CenterThe Chinese University of Hong KongHong Kong SARChina
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research CenterThe Chinese University of Hong KongHong Kong SARChina
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research CenterThe Chinese University of Hong KongHong Kong SARChina
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research CenterThe Chinese University of Hong KongHong Kong SARChina
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research CenterThe Chinese University of Hong KongHong Kong SARChina
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15
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de Boer J, Ehrler B. Scalable Microscale Artificial Synapses of Lead Halide Perovskite with Femtojoule Energy Consumption. ACS ENERGY LETTERS 2024; 9:5787-5794. [PMID: 39698340 PMCID: PMC11650764 DOI: 10.1021/acsenergylett.4c02360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2024] [Revised: 10/25/2024] [Accepted: 10/31/2024] [Indexed: 12/20/2024]
Abstract
The efficient conduction of mobile ions in halide perovskites is highly promising for artificial synapses (or memristive devices), devices with a conductivity that can be varied by applying a bias voltage. Here we address the challenge of downscaling halide perovskite-based artificial synapses to achieve low energy consumption and allow high-density integration. We fabricate halide perovskite artificial synapses in a back-contacted architecture to achieve microscale devices despite the high solubility of halide perovskites in polar solvents that are commonly used in lithography. The energy consumption of a conductance change of the device is as low as 640 fJ, among the lowest reported for two-terminal halide perovskite artificial synapses so far. Moreover, the high resistance of the device up to hundreds of megaohms, low operating voltage of 100 mV and simple two-terminal architecture enable implementation in highly dense crossbar arrays. These arrays could potentially show orders of magnitude lower energy consumption for computation compared to conventional digital computers.
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Affiliation(s)
| | - Bruno Ehrler
- Center for Nanophotonics, AMOLF, 1098 XG Amsterdam, The Netherlands
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16
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Ding G, Li H, Zhao J, Zhou K, Zhai Y, Lv Z, Zhang M, Yan Y, Han ST, Zhou Y. Nanomaterials for Flexible Neuromorphics. Chem Rev 2024; 124:12738-12843. [PMID: 39499851 DOI: 10.1021/acs.chemrev.4c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
The quest to imbue machines with intelligence akin to that of humans, through the development of adaptable neuromorphic devices and the creation of artificial neural systems, has long stood as a pivotal goal in both scientific inquiry and industrial advancement. Recent advancements in flexible neuromorphic electronics primarily rely on nanomaterials and polymers owing to their inherent uniformity, superior mechanical and electrical capabilities, and versatile functionalities. However, this field is still in its nascent stage, necessitating continuous efforts in materials innovation and device/system design. Therefore, it is imperative to conduct an extensive and comprehensive analysis to summarize current progress. This review highlights the advancements and applications of flexible neuromorphics, involving inorganic nanomaterials (zero-/one-/two-dimensional, and heterostructure), carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, and polymers. Additionally, a comprehensive comparison and summary of the structural compositions, design strategies, key performance, and significant applications of these devices are provided. Furthermore, the challenges and future directions pertaining to materials/devices/systems associated with flexible neuromorphics are also addressed. The aim of this review is to shed light on the rapidly growing field of flexible neuromorphics, attract experts from diverse disciplines (e.g., electronics, materials science, neurobiology), and foster further innovation for its accelerated development.
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Affiliation(s)
- Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, PR China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong SAR PR China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
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17
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Wei H, Liu J, Ni Y, Hu X, Lv X, Yang L, He G, Xu Z, Gong J, Jiang C, Feng D, Xu W. Two-Dimensional Electrically Conductive Metal-Organic Framework Boosts Synaptic Plasticity for Dynamic Image Refresh, Classification, and Efferent Neuromuscular Systems. NANO LETTERS 2024. [PMID: 39570189 DOI: 10.1021/acs.nanolett.4c04650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2024]
Abstract
We present a two-dimensional (2D) electrically conductive metal-organic framework (EC-MOF)-based artificial synapse. The intrinsic electronic conductivity and subnanometer channels of the EC-MOF facilitate efficient ion diffusion, enable a high density of active redox centers, and significantly enhance capacitance within the artificial synapse. As a result, the synapse operates at an ultralow voltage of 10 mV and exhibits a remarkably low power consumption of approximately 1 fW, along with the longest retention time recorded for two-terminal electrolyte-type artificial synapses to date. The alignment of the quantum size of the subnanometer pores in the EC-MOF with various cations allows for versatile synaptic plasticity. This capability is applied to image refresh, classification, and efferent signal transmission for controlling artificial muscles, thereby offering a methodology for achieving tunable neuromorphic properties. These findings suggest the potential application of metal-organic frameworks in artificial nervous systems for future brain-inspired computation, peripheral interfaces, and neurorobotics.
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Affiliation(s)
- Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, PR China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
| | - Xuanxin Hu
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Xiuliang Lv
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
| | - Gang He
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, PR China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
| | - Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
| | - Dawei Feng
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, PR China
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18
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Qiu J, Li J, Li W, Wang K, Zhang S, Suk CH, Wu C, Zhou X, Zhang Y, Guo T, Kim TW. Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review. ACS NANO 2024; 18:31632-31659. [PMID: 39499041 DOI: 10.1021/acsnano.4c10170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
Neuromorphic computing, inspired by the highly interconnected and energy-efficient way the human brain processes information, has emerged as a promising technology for post-Moore's law era. This emerging technology can emulate the structures and the functions of the human brain and is expected to overcome the fundamental limitation of the current von Neumann computing architecture. Neuromorphic devices stand out as the key components of future electronic systems, exhibiting potential in shaping the landscape of neuromorphic computing. Especially, nanowire (NW)-based neuromorphic devices, with their advantages of high integration, high-speed computing, and low power consumption, have recently emerged as candidates for neuromorphic computing technology. Here, a critical overview of the current development and relevant research in the field of NW-based neuromorphic devices are provided. Neuromorphic devices based on different NW materials are comprehensively discussed, including Ag NW-based, organic NW-based, metal oxide NW-based, and semiconductor NW-based devices. Finally, as a foresight perspective, the potentials and the challenges of these NW-based neuromorphic devices for use as future brain-like electronics are discussed.
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Affiliation(s)
- Jiawen Qiu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Junlong Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenhao Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Kun Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Shuqian Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Chan Hee Suk
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Chaoxing Wu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Xiongtu Zhou
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Yongai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tailiang Guo
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tae Whan Kim
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
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19
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Du Y, Gong J, Wei H, Yang L, Ni Y, Xu W. Ultrasensitive Flexible Organic Synaptic Transistors Modulated by a Chemically Cross-Linked Solvent-Resistive Ion Composite. J Phys Chem Lett 2024; 15:11139-11147. [PMID: 39480058 DOI: 10.1021/acs.jpclett.4c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2024]
Abstract
We demonstrate a flexible organic synaptic transistor (FOST) with an ion-composite electrolyte film resistant to chemical reagents, which uses a three-dimensionally cross-linked polyimide matrix to accommodate a high-concentration ionic liquid. FOST shows versatile synaptic plasticity for classical conditioning, high-pass filtering, and the learning-forgetting process. The device achieves low-energy consumption down to 1.02 femtojoule per synaptic event with an ultrasensitive impulse to presynaptic spike down to 0.5 mV. Moreover, the electrical performance of the device is still stable after 1000 mechanical bending cycles. These results demonstrate that the device can be applied to future flexible neuromorphic electronics.
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Affiliation(s)
- Yi Du
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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20
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Sinha A, Lee J, Kim J, So H. An evaluation of recent advancements in biological sensory organ-inspired neuromorphically tuned biomimetic devices. MATERIALS HORIZONS 2024; 11:5181-5208. [PMID: 39114942 DOI: 10.1039/d4mh00522h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2024]
Abstract
In the field of neuroscience, significant progress has been made regarding how the brain processes information. Unlike computer processors, the brain comprises neurons and synapses instead of memory blocks and transistors. Despite advancements in artificial neural networks, a complete understanding concerning brain functions remains elusive. For example, to achieve more accurate neuron replication, we must better understand signal transmission during synaptic processes, neural network tunability, and the creation of nanodevices featuring neurons and synapses. This study discusses the latest algorithms utilized in neuromorphic systems, the production of synaptic devices, differences between single and multisensory gadgets, recent advances in multisensory devices, and the promising research opportunities available in this field. We also explored the ability of an artificial synaptic device to mimic biological neural systems across diverse applications. Despite existing challenges, neuroscience-based computing technology holds promise for attracting scientists seeking to enhance solutions and augment the capabilities of neuromorphic devices, thereby fostering future breakthroughs in algorithms and the widespread application of cutting-edge technologies.
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Affiliation(s)
- Animesh Sinha
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
| | - Jihun Lee
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
| | - Junho Kim
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
| | - Hongyun So
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
- Institute of Nano Science and Technology, Hanyang University, Seoul 04763, South Korea
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21
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Chen X, Mao W, Zhou W, Huang P, Liu H, Wang X, Liang Z, Yang Q, Chen Y, Zhou G, Xu J. In-Situ Fabricated Transparent Flexible Nanowire Device with Wavelength-Regulated Dual-Function of Photodetector and Photonic Synapse. ACS APPLIED MATERIALS & INTERFACES 2024; 16:57512-57523. [PMID: 39401295 DOI: 10.1021/acsami.4c12357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2024]
Abstract
Integrating the dual functionalities of a photodetector and photonic synapse into a single device is challenging due to their conflicting requirements for photocurrent decay rates. This study addresses this issue by seamlessly depositing transparent indium tin oxide (ITO) electrodes onto self-oriented copper hexadecafluoro-phthalocyanine (F16CuPc) nanowires growing horizontally along hot-stamped periodic nanogrooves on a transparent flexible polyimide plastic film. This in-situ-fabricated device achieves bending-stable dual functionalities through wavelength regulation while maintaining high transparency and flexibility. Upon exposure to 450-850 nm light, the device exhibits a rapid and sensitive photoresponse with excellent bending stability, making it ideal for optical sensing in both visible and near-infrared spectra. More importantly, the device exhibits a bending-stable excitation postsynaptic current when exposed to light spikes below 405 nm. This enables the successful emulation of various biological synaptic functionalities, including paired-pulse facilitation, spike-number-dependent plasticity, spike-duration-dependent plasticity, spike-rating-dependent plasticity, configurable plasticity between short-term plasticity and long-term plasticity, and memory learning capabilities. Utilizing this device in an artificial neural network achieves a recognition rate of 95% after 57 training epochs. Its ability to switch between photodetection and synaptic modes by adjusting the light wavelength marks a significant advancement in the field of multifunctional flexible electronics based on nanowire arrays.
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Affiliation(s)
- Xiangtao Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Wanglong Mao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Wei Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Pingyang Huang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Hanyu Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Xingyu Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Zhanhao Liang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Qiming Yang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Yanbin Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Jinyou Xu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
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22
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Li J, Xiang Z, Li S. Self-assembled micro-patterns in uphill-diffusion solution system. NANOTECHNOLOGY 2024; 36:025604. [PMID: 39374620 DOI: 10.1088/1361-6528/ad83d8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Accepted: 10/07/2024] [Indexed: 10/09/2024]
Abstract
In this work we present self-organized regular patterns in a solution system through uphill-diffusion. Micrometer thick organic semiconductor solution is sandwiched between a substrate and cover-plate. Self-assembled regular patterns can be observed on the substrate after solvent evaporation. Different micro-patterns and pattern defects were displayed and analyzed. Mechanisms of defect formation, mode selection process during patten generation, and pattern sedimentation onto substrate from solution were proposed. Organic thin film transistors were fabricated with the assembled line patterns which demonstrate a promising way to produce patterned micro/nano materials.
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Affiliation(s)
- Jin Li
- School of Instrumentation and Optoelectronic Engineering, Beihang University, 100191 Beijing, People's Republic of China
| | - Zezhong Xiang
- College of New Materials and New Energies, Shenzhen Technology University, 518118 Shenzhen, People's Republic of China
| | - Shunpu Li
- College of New Materials and New Energies, Shenzhen Technology University, 518118 Shenzhen, People's Republic of China
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23
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Sun M, Xu Z, Qu S, Liu L, Zhu Q, Xu W. Synaptic Transistors Using Scalable Graphene Nanoribbons. J Phys Chem Lett 2024; 15:8956-8963. [PMID: 39185714 DOI: 10.1021/acs.jpclett.4c02149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/27/2024]
Abstract
Graphene has demonstrated potential for use in neuromorphic electronics due to its superior electrical properties. However, these devices are all based on graphene sheets without patterning, restricting its applications. Here, we demonstrate a graphene nanoribbon synaptic transistor (GNST), with the graphene nanoribbon (GNR) channels fabricated using an electro-hydrodynamically printed nanowire array as lithographic masks for scalable fabrication. The GNST shows tunable synaptic plasticity by spike duration, frequency, and number. Moreover, the device is energy-efficient and ambipolar and shows a regulated response by nanoribbon width. The characteristics of GNSTs are applicable to pattern recognition, showing an accuracy of 84.5%. The device is applicable to Pavlov's classical conditioning. This study reports the first synaptic transistor based on GNRs, providing new insights into future neuromorphic electronics.
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Affiliation(s)
- Mingxin Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Qingshan Zhu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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24
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Tan D, Zhang Z, Shi H, Sun N, Li Q, Bi S, Huang J, Liu Y, Guo Q, Jiang C. Bioinspired Artificial Visual-Respiratory Synapse as Multimodal Scene Recognition System with Oxidized-Vacancies MXene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2407751. [PMID: 39011791 DOI: 10.1002/adma.202407751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Revised: 06/27/2024] [Indexed: 07/17/2024]
Abstract
In the pursuit of artificial neural systems, the integration of multimodal plasticity, memory retention, and perceptual functions stands as a paramount objective in achieving neuromorphic perceptual components inspired by the human brain, to emulating the neurological excitability tuning observed in human visual and respiratory collaborations. Here, an artificial visual-respiratory synapse is presented with monolayer oxidized MXene (VRSOM) exhibiting synergistic light and atmospheric plasticity. The VRSOM enables to realize facile modulation of synaptic behaviors, encompassing postsynaptic current, sustained photoconductivity, stable facilitation/depression properties, and "learning-experience" behavior. These performances rely on the privileged photocarrier trapping characteristics and the hydroxyl-preferential selectivity inherent of oxidized vacancies. Moreover, environment recognitions and multimodal neural network image identifications are achieved through multisensory integration, underscoring the potential of the VRSOM in reproducing human-like perceptual attributes. The VRSOM platform holds significant promise for hardware output of human-like mixed-modal interactions and paves the way for perceiving multisensory neural behaviors in artificial interactive devices.
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Affiliation(s)
- Dongchen Tan
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
| | - Zhaorui Zhang
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
| | - Haohao Shi
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
| | - Nan Sun
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
| | - Qikun Li
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Sheng Bi
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
| | - Jijie Huang
- School of Materials Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Yiheng Liu
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
| | - Qinglei Guo
- Department of Material Science and Engineering, Frederick Seitz Material Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Chengming Jiang
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
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25
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Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
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Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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26
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Li R, Yue Z, Luan H, Dong Y, Chen X, Gu M. Multimodal Artificial Synapses for Neuromorphic Application. RESEARCH (WASHINGTON, D.C.) 2024; 7:0427. [PMID: 39161534 PMCID: PMC11331013 DOI: 10.34133/research.0427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Accepted: 06/24/2024] [Indexed: 08/21/2024]
Abstract
The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.
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Affiliation(s)
- Runze Li
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Institute of Photonic Chips,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Zhangjiang Laboratory, Pudong, Shanghai 201210, China
| | - Zengji Yue
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haitao Luan
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yibo Dong
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xi Chen
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Min Gu
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
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27
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Chen L, Ren M, Zhou J, Zhou X, Liu F, Di J, Xue P, Li C, Li Q, Li Y, Wei L, Zhang Q. Bioinspired iontronic synapse fibers for ultralow-power multiplexing neuromorphic sensorimotor textiles. Proc Natl Acad Sci U S A 2024; 121:e2407971121. [PMID: 39110725 PMCID: PMC11331142 DOI: 10.1073/pnas.2407971121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Accepted: 06/27/2024] [Indexed: 08/21/2024] Open
Abstract
Artificial neuromorphic devices can emulate dendric integration, axonal parallel transmission, along with superior energy efficiency in facilitating efficient information processing, offering enormous potential for wearable electronics. However, integrating such circuits into textiles to achieve biomimetic information perception, processing, and control motion feedback remains a formidable challenge. Here, we engineer a quasi-solid-state iontronic synapse fiber (ISF) comprising photoresponsive TiO2, ion storage Co-MoS2, and an ion transport layer. The resulting ISF achieves inherent short-term synaptic plasticity, femtojoule-range energy consumption, and the ability to transduce chemical/optical signals. Multiple ISFs are interwoven into a synthetic neural fabric, allowing the simultaneous propagation of distinct optical signals for transmitting parallel information. Importantly, IFSs with multiple input electrodes exhibit spatiotemporal information integration. As a proof of concept, a textile-based multiplexing neuromorphic sensorimotor system is constructed to connect synaptic fibers with artificial fiber muscles, enabling preneuronal sensing information integration, parallel transmission, and postneuronal information output to control the coordinated motor of fiber muscles. The proposed fiber system holds enormous promise in wearable electronics, soft robotics, and biomedical engineering.
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Affiliation(s)
- Long Chen
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Ming Ren
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Jianxian Zhou
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Xuhui Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Fan Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Jiangtao Di
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Pan Xue
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou225002, China
| | - Chunsheng Li
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou215009, China
| | - Qingwen Li
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Yang Li
- School of Microelectronics, Shandong University, Jinan250101, China
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Qichong Zhang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
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28
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Khan R, Rahman NU, Hayat MF, Ghernaout D, Salih AAM, Ashraf GA, Samad A, Mahmood MA, Rahman N, Sohail M, Iqbal S, Abdullaev S, Khan A. Unveiling cutting-edge developments: architectures and nanostructured materials for application in optoelectronic artificial synapses. NANOSCALE 2024; 16:14589-14620. [PMID: 39011743 DOI: 10.1039/d4nr00904e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
One possible result of low-level characteristics in the traditional von Neumann formulation system is brain-inspired photonics technology based on human brain idea. Optoelectronic neural devices, which are accustomed to imitating the sensory role of biological synapses by adjusting connection measures, can be used to fabricate highly reliable neurologically calculating devices. In this case, nanosized materials and device designs are attracting attention since they provide numerous potential benefits in terms of limited cool contact, rapid transfer fluidity, and the capture of photocarriers. In addition, the combination of classic nanosized photodetectors with recently generated digital synapses offers promising results in a variety of practical applications, such as data processing and computation. Herein, we present the progress in constructing improved optoelectronic synaptic devices that rely on nanomaterials, for example, 0-dimensional (quantum dots), 1-dimensional, and 2-dimensional composites, besides the continuously developing mixed heterostructures. Furthermore, the challenges and potential prospects linked with this field of study are discussed in this paper.
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Affiliation(s)
- Rajwali Khan
- National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates.
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Naveed Ur Rahman
- National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates.
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | | | - Djamel Ghernaout
- Chemical Engineering Department, College of Engineering, University of Ha'il, PO Box 2440, Ha'il 81441, Saudi Arabia
- Chemical Engineering Department, Faculty of Engineering, University of Blida, PO Box 270, Blida 09000, Algeria
| | - Alsamani A M Salih
- Chemical Engineering Department, College of Engineering, University of Ha'il, PO Box 2440, Ha'il 81441, Saudi Arabia
- Department of Chemical Engineering, Faculty of Engineering, Al Neelain University, Khartoum 12702, Sudan
| | | | - Abdus Samad
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | | | - Nasir Rahman
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Mohammad Sohail
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Shahid Iqbal
- Department of Physics, University of Wisconsin, La Crosse, WI 54601, USA
| | - Sherzod Abdullaev
- Senior Researcher, Engineering School, Central Asian University, Tashkent, Uzbekistan
- Senior Researcher, Scientific and Innovation Department, Tashkent State Pedagogical University, Uzbekistan
| | - Alamzeb Khan
- Yale University School of Medicine, New Haven, Connecticut, USA
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29
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Qin X, Zhong B, Lv S, Long X, Xu H, Li L, Xu K, Lou Z, Luo Q, Wang L. A Zero-Voltage-Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404026. [PMID: 38762756 DOI: 10.1002/adma.202404026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 05/13/2024] [Indexed: 05/20/2024]
Abstract
The artificial nervous system proves the great potential for the emulation of complex neural signal transduction. However, a more bionic system design for bio-signal transduction still lags behind that of physical signals, and relies on additional external sources. Here, this work presents a zero-voltage-writing artificial nervous system (ZANS) that integrates a bio-source-sensing device (BSSD) for ion-based sensing and power generation with a hafnium-zirconium oxide-ferroelectric tunnel junction (HZO-FTJ) for the continuously adjustable resistance state. The BSSD can use ion bio-source as both perception and energy source, and then output voltage signals varied with the change of ion concentrations to the HZO-FTJ, which completes the zero-voltage-writing neuromorphic bio-signal modulation. In view of in/ex vivo biocompatibility, this work shows the precise muscle control of a rabbit leg by integrating the ZANS with a flexible nerve stimulation electrode. The independence on external source enhances the application potential of ZANS in robotics and prosthetics.
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Affiliation(s)
- Xiaokun Qin
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bowen Zhong
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuxian Lv
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Xiao Long
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Hao Xu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Linlin Li
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kaichen Xu
- State Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical Engineering, Zhejiang University, Hangzhou, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qing Luo
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Lili Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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30
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Li S, Gao L, Liu C, Guo H, Yu J. Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors. SENSORS (BASEL, SWITZERLAND) 2024; 24:4915. [PMID: 39123962 PMCID: PMC11314768 DOI: 10.3390/s24154915] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2024] [Revised: 07/26/2024] [Accepted: 07/27/2024] [Indexed: 08/12/2024]
Abstract
Biomimetic neuromorphic sensing systems, inspired by the structure and function of biological neural networks, represent a major advancement in the field of sensing technology and artificial intelligence. This review paper focuses on the development and application of electrolyte gated transistors (EGTs) as the core components (synapses and neuros) of these neuromorphic systems. EGTs offer unique advantages, including low operating voltage, high transconductance, and biocompatibility, making them ideal for integrating with sensors, interfacing with biological tissues, and mimicking neural processes. Major advances in the use of EGTs for neuromorphic sensory applications such as tactile sensors, visual neuromorphic systems, chemical neuromorphic systems, and multimode neuromorphic systems are carefully discussed. Furthermore, the challenges and future directions of the field are explored, highlighting the potential of EGT-based biomimetic systems to revolutionize neuromorphic prosthetics, robotics, and human-machine interfaces. Through a comprehensive analysis of the latest research, this review is intended to provide a detailed understanding of the current status and future prospects of biomimetic neuromorphic sensory systems via EGT sensing and integrated technologies.
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Affiliation(s)
| | | | | | | | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
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31
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Yao J, Wang Q, Zhang Y, Teng Y, Li J, Zhao P, Zhao C, Hu Z, Shen Z, Liu L, Tian D, Qiu S, Wang Z, Kang L, Li Q. Ultra-low power carbon nanotube/porphyrin synaptic arrays for persistent photoconductivity and neuromorphic computing. Nat Commun 2024; 15:6147. [PMID: 39034334 PMCID: PMC11271480 DOI: 10.1038/s41467-024-50490-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 07/10/2024] [Indexed: 07/23/2024] Open
Abstract
Developing devices with a wide-temperature range persistent photoconductivity (PPC) and ultra-low power consumption remains a significant challenge for optical synaptic devices used in neuromorphic computing. By harnessing the PPC properties in materials, it can achieve optical storage and neuromorphic computing, surpassing the von Neuman architecture-based systems. However, previous research implemented PPC required additional gate voltages and low temperatures, which need additional energy consumption and PPC cannot be achieved across a wide temperature range. Here, we fabricated a simple heterojunctions using zinc(II)-meso-tetraphenyl porphyrin (ZnTPP) and single-walled carbon nanotubes (SWCNTs). By leveraging the strong binding energy at the heterojunction interface and the unique band structure, the heterojunction achieved PPC over an exceptionally wide temperature range (77 K-400 K). Remarkably, it demonstrated nonvolatile storage for up to 2×104 s, without additional gate voltage. The minimum energy consumption for each synaptic event is as low as 6.5 aJ. Furthermore, we successfully demonstrate the feasibility to manufacture a flexible wafer-scale array utilizing this heterojunction. We applied it to autonomous driving under extreme temperatures and achieved as a high impressive accuracy rate as 94.5%. This tunable and stable wide-temperature PPC capability holds promise for ultra-low-power neuromorphic computing.
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Affiliation(s)
- Jian Yao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Qinan Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jing Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Pin Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China.
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zongjie Shen
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Liwei Liu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Dan Tian
- College of Materials Science and Engineering, Co-Innovation Center of Effiicient Processing and Utilization of Forest Resources, Nanjing Forestry University, Nanjing, 210037, China
| | - Song Qiu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, 999077, China
| | - Lixing Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
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32
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Zhao C, Yang J, Ma W. Transient Response and Ionic Dynamics in Organic Electrochemical Transistors. NANO-MICRO LETTERS 2024; 16:233. [PMID: 38954272 PMCID: PMC11219702 DOI: 10.1007/s40820-024-01452-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Accepted: 06/05/2024] [Indexed: 07/04/2024]
Abstract
The rapid development of organic electrochemical transistors (OECTs) has ushered in a new era in organic electronics, distinguishing itself through its application in a variety of domains, from high-speed logic circuits to sensitive biosensors, and neuromorphic devices like artificial synapses and organic electrochemical random-access memories. Despite recent strides in enhancing OECT performance, driven by the demand for superior transient response capabilities, a comprehensive understanding of the complex interplay between charge and ion transport, alongside electron-ion interactions, as well as the optimization strategies, remains elusive. This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses, emphasizing advancements in device physics and optimization approaches. We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications, as well as the impact of materials, morphology, device structure strategies on optimizing transient responses. This paper not only offers a detailed overview of the current state of the art, but also identifies promising avenues for future research, aiming to drive future performance advancements in diversified applications.
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Affiliation(s)
- Chao Zhao
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Jintao Yang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Wei Ma
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
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Merces L, Ferro LMM, Nawaz A, Sonar P. Advanced Neuromorphic Applications Enabled by Synaptic Ion-Gating Vertical Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305611. [PMID: 38757653 PMCID: PMC11251569 DOI: 10.1002/advs.202305611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 12/07/2023] [Indexed: 05/18/2024]
Abstract
Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain-like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting-edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low-voltage multi-sensing IGVTs for artificial-synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi-stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi-modal flexible sensor technologies and presents a roadmap for future high-end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.
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Affiliation(s)
- Leandro Merces
- Research Center for MaterialsArchitectures, and Integration of Nanomembranes (MAIN)Chemnitz University of Technology09126ChemnitzGermany
| | - Letícia Mariê Minatogau Ferro
- Research Center for MaterialsArchitectures, and Integration of Nanomembranes (MAIN)Chemnitz University of Technology09126ChemnitzGermany
| | - Ali Nawaz
- Center for Sensors and DevicesBruno Kessler Foundation (FBK)Trento38123Italy
| | - Prashant Sonar
- School of Chemistry and PhysicsQueensland University of Technology (QUT)BrisbaneQLD4000Australia
- Centre for Materials ScienceQueensland University of Technology2 George StreetBrisbaneQLD4000Australia
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34
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Kim H, Won Y, Song HW, Kwon Y, Jun M, Oh JH. Organic Mixed Ionic-Electronic Conductors for Bioelectronic Sensors: Materials and Operation Mechanisms. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306191. [PMID: 38148583 PMCID: PMC11251567 DOI: 10.1002/advs.202306191] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 12/18/2023] [Indexed: 12/28/2023]
Abstract
The field of organic mixed ionic-electronic conductors (OMIECs) has gained significant attention due to their ability to transport both electrons and ions, making them promising candidates for various applications. Initially focused on inorganic materials, the exploration of mixed conduction has expanded to organic materials, especially polymers, owing to their advantages such as solution processability, flexibility, and property tunability. OMIECs, particularly in the form of polymers, possess both electronic and ionic transport functionalities. This review provides an overview of OMIECs in various aspects covering mechanisms of charge transport including electronic transport, ionic transport, and ionic-electronic coupling, as well as conducting/semiconducting conjugated polymers and their applications in organic bioelectronics, including (multi)sensors, neuromorphic devices, and electrochromic devices. OMIECs show promise in organic bioelectronics due to their compatibility with biological systems and the ability to modulate electronic conduction and ionic transport, resembling the principles of biological systems. Organic electrochemical transistors (OECTs) based on OMIECs offer significant potential for bioelectronic applications, responding to external stimuli through modulation of ionic transport. An in-depth review of recent research achievements in organic bioelectronic applications using OMIECs, categorized based on physical and chemical stimuli as well as neuromorphic devices and circuit applications, is presented.
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Affiliation(s)
- Hyunwook Kim
- School of Chemical and Biological EngineeringInstitute of Chemical ProcessesSeoul National University1 Gwanak‐roGwanak‐guSeoul08826Republic of Korea
| | - Yousang Won
- School of Chemical and Biological EngineeringInstitute of Chemical ProcessesSeoul National University1 Gwanak‐roGwanak‐guSeoul08826Republic of Korea
| | - Hyun Woo Song
- School of Chemical and Biological EngineeringInstitute of Chemical ProcessesSeoul National University1 Gwanak‐roGwanak‐guSeoul08826Republic of Korea
| | - Yejin Kwon
- School of Chemical and Biological EngineeringInstitute of Chemical ProcessesSeoul National University1 Gwanak‐roGwanak‐guSeoul08826Republic of Korea
| | - Minsang Jun
- School of Chemical and Biological EngineeringInstitute of Chemical ProcessesSeoul National University1 Gwanak‐roGwanak‐guSeoul08826Republic of Korea
| | - Joon Hak Oh
- School of Chemical and Biological EngineeringInstitute of Chemical ProcessesSeoul National University1 Gwanak‐roGwanak‐guSeoul08826Republic of Korea
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35
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Wu X, Chen S, Jiang L, Wang X, Qiu L, Zheng L. Highly Sensitive, Low-Energy-Consumption Biomimetic Olfactory Synaptic Transistors Based on the Aggregation of the Semiconductor Films. ACS Sens 2024; 9:2673-2683. [PMID: 38688032 DOI: 10.1021/acssensors.4c00616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Artificial olfactory synaptic devices with low energy consumption and low detection limits are important for the further development of neuromorphic computing and intelligent robotics. In this work, an ultralow energy consumption and low detection limit imitation olfactory synaptic device based on organic field-effect transistors (OFETs) was prepared. The aggregation state of poly(diketopyrrolopyrrole-selenophene) (PTDPP) semiconductor films is modulated by adding unfavorable solvents and annealing treatments to obtain excellent charge transfer and gas synaptic properties. The regulated OFET device can execute basic biological synaptic functions, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), and the transition from short-term to long-term plasticity, at an ultralow operating voltage of -0.0005 V. The ultralow energy consumption during the biomimetic simulation is in the range of 8.94-88 fJ per spike. Noteworthily, the gas detection limit of the device is as low as 50 ppb, well below normal human NO2 gas perception limits (100-1000 ppb). Additionally, high-pass filtering, Pavlovian conditioned reflexes, and decoding of "Morse code" were simulated. Finally, a grid-free conformal device with outstanding flexibility and stability was fabricated. In conclusion, the control of semiconductor thin-film aggregation provides effective guidance for preparing low-energy-consumption, highly sensitive olfactory nerve-mimicking devices and promoting the development of wearable electronics.
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Affiliation(s)
- Xiaocheng Wu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Siyu Chen
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Lei Zheng
- School of Food and Biological Engineering, Hefei University of Technology, Hefei 230009, China
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Wang Y, Zha Y, Bao C, Hu F, Di Y, Liu C, Xing F, Xu X, Wen X, Gan Z, Jia B. Monolithic 2D Perovskites Enabled Artificial Photonic Synapses for Neuromorphic Vision Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311524. [PMID: 38275007 DOI: 10.1002/adma.202311524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/23/2024] [Indexed: 01/27/2024]
Abstract
Neuromorphic visual sensors (NVS) based on photonic synapses hold a significant promise to emulate the human visual system. However, current photonic synapses rely on exquisite engineering of the complex heterogeneous interface to realize learning and memory functions, resulting in high fabrication cost, reduced reliability, high energy consumption and uncompact architecture, severely limiting the up-scaled manufacture, and on-chip integration. Here a photo-memory fundamental based on ion-exciton coupling is innovated to simplify synaptic structure and minimize energy consumption. Due to the intrinsic organic/inorganic interface within the crystal, the photodetector based on monolithic 2D perovskite exhibits a persistent photocurrent lasting about 90 s, enabling versatile synaptic functions. The electrical power consumption per synaptic event is estimated to be≈1.45 × 10-16 J, one order of magnitude lower than that in a natural biological system. Proof-of-concept image preprocessing using the neuromorphic vision sensors enabled by photonic synapse demonstrates 4 times enhancement of classification accuracy. Furthermore, getting rid of the artificial neural network, an expectation-based thresholding model is put forward to mimic the human visual system for facial recognition. This conceptual device unveils a new mechanism to simplify synaptic structure, promising the transformation of the NVS and fostering the emergence of next generation neural networks.
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Affiliation(s)
- Yun Wang
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Yanfang Zha
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Chunxiong Bao
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Fengrui Hu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Yunsong Di
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Cihui Liu
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Fangjian Xing
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Xingyuan Xu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, P. R. China
| | - Xiaoming Wen
- Centre for Atomaterials and Nanomanufacturing, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Zhixing Gan
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Baohua Jia
- Centre for Atomaterials and Nanomanufacturing, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
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Ni Y, Liu J, Han H, Yu Q, Yang L, Xu Z, Jiang C, Liu L, Xu W. Visualized in-sensor computing. Nat Commun 2024; 15:3454. [PMID: 38658551 PMCID: PMC11043433 DOI: 10.1038/s41467-024-47630-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 04/08/2024] [Indexed: 04/26/2024] Open
Abstract
In artificial nervous systems, conductivity changes indicate synaptic weight updates, but they provide limited information compared to living organisms. We present the pioneering design and production of an electrochromic neuromorphic transistor employing color updates to represent synaptic weight for in-sensor computing. Here, we engineer a specialized mechanism for adaptively regulating ion doping through an ion-exchange membrane, enabling precise control over color-coded synaptic weight, an unprecedented achievement. The electrochromic neuromorphic transistor not only enhances electrochromatic capabilities for hardware coding but also establishes a visualized pattern-recognition network. Integrating the electrochromic neuromorphic transistor with an artificial whisker, we simulate a bionic reflex system inspired by the longicorn beetle, achieving real-time visualization of signal flow within the reflex arc in response to environmental stimuli. This research holds promise in extending the biomimetic coding paradigm and advancing the development of bio-hybrid interfaces, particularly in incorporating color-based expressions.
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Affiliation(s)
- Yao Ni
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Jiaqi Liu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Hong Han
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Qianbo Yu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Lu Yang
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Zhipeng Xu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Chengpeng Jiang
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Lu Liu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Wentao Xu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China.
- Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China.
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Wu X, Shi S, Liang B, Dong Y, Yang R, Ji R, Wang Z, Huang W. Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing. SCIENCE ADVANCES 2024; 10:eadn4524. [PMID: 38630830 PMCID: PMC11023521 DOI: 10.1126/sciadv.adn4524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Accepted: 03/13/2024] [Indexed: 04/19/2024]
Abstract
Bio-inspired transistor synapses use solid electrolytes to achieve low-power operation and rich synaptic behaviors via ion diffusion and trapping. While these neuromorphic devices hold great promise, they still suffer from challenges such as high leakage currents and power consumption, electrolysis risk, and irreversible conductance changes due to long-range ion migrations and permanent ion trapping. In addition, their response to light is generally limited because of "exciton-polaron quenching", which restricts their potential in in-sensor neuromorphic visions. To address these issues, we propose replacing solid electrolytes with polyzwitterions, where the cation and anion are covalently concatenated via a flexible alkyl chain, thus preventing long-range ion migrations while inducing good photoresponses to the transistors via interfacial charge trapping. Our detailed studies reveal that polyzwitterion-based transistors exhibit optoelectronic synaptic behavior with ultralow-power consumption (~250 aJ per spike) and enable high-performance in-sensor reservoir computing, achieving 95.56% accuracy in perceiving the trajectory of moving basketballs.
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Affiliation(s)
- Xiaosong Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, P. R. China
| | - Baoshuai Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
| | - Yu Dong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350002, P. R. China
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, P. R. China
| | - Rumeng Yang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
| | - Ruiduan Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, P. R. China
| | - Weiguo Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
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Li Y, Cai W, Tao R, Shuai W, Rao J, Chang C, Lu X, Ning H. Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High- k Oxide Composite Dielectric. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19271-19282. [PMID: 38591357 DOI: 10.1021/acsami.4c02880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Inkjet printing artificial synapse is cost-effective but challenging in emulating synaptic dynamics with a sufficient number of effective weight states under ultralow voltage spiking operation. A synaptic transistor gated by inkjet-printed composite dielectric of polar-electret polyvinylpyrrolidone (PVP) and high-k zirconia oxide (ZrOx) is proposed and thus synthesized to solve this issue. Quasi-linear weight update with a large variation margin is obtained through the coupling effect and the facilitation of dipole orientation, which can be attributed to the orderly arranged molecule chains induced by the carefully designed microfluidic flows. Crucial features of biological synapses including long-term plasticity, spike-timing-dependence-plasticity (STDP), "Learning-Experience" behavior, and ultralow energy consumption (<10 fJ/pulse) are successfully implemented on the device. Simulation results exhibit an excellent image recognition accuracy (97.1%) after 15 training epochs, which is the highest for printed synaptic transistors. Moreover, the device sustained excellent endurance against bending tests with radius down to 8 mm. This work presents a very viable solution for constructing the futuristic flexible and low-cost neural systems.
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Affiliation(s)
- Yushan Li
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wei Cai
- Jihua Laboratory, Foshan, Guangzhou 528000, China
| | - Ruiqiang Tao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wentao Shuai
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jingjing Rao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Cheng Chang
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
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40
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Liu J, Jiang C, Wei H, Wang Z, Sun L, Zhang S, Ni Y, Qu S, Yang L, Xu W. Vertically Integrated Monolithic Neuromorphic Nanowire Device for Physiological Information Processing. NANO LETTERS 2024; 24:4336-4345. [PMID: 38567915 DOI: 10.1021/acs.nanolett.3c04391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
This study demonstrates the conceptual design and fabrication of a vertically integrated monolithic (VIM) neuromorphic device. The device comprises an n-type SnO2 nanowire bottom channel connected by a shared gate to a p-type P3HT nanowire top channel. This architecture establishes two distinct neural pathways with different response behaviors. The device generates excitatory and inhibitory postsynaptic currents, mimicking the corelease mechanism of bilingual synapses. To enhance the signal processing efficiency, we employed a bipolar spike encoding strategy to convert fluctuating sensory signals to spike trains containing positive and negative pulses. Utilizing the neuromorphic platform for synaptic processing, physiological signals featuring bidirectional fluctuations, including electrocardiogram and breathing signals, can be classified with an accuracy of over 90%. The VIM device holds considerable promise as a solution for developing highly integrated neuromorphic hardware for healthcare and edge intelligence applications.
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Affiliation(s)
- Junchi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, China
| | - Zixian Wang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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42
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Yang L, Ni Y, Jiang C, Liu L, Zhang S, Liu J, Sun L, Xu W. A neuromorphic device mimicking synaptic plasticity under different body fluid K + homeostasis for artificial reflex path construction and pattern recognition. FUNDAMENTAL RESEARCH 2024; 4:353-361. [PMID: 38933504 PMCID: PMC11197765 DOI: 10.1016/j.fmre.2022.03.024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Revised: 03/25/2022] [Accepted: 03/29/2022] [Indexed: 11/22/2022] Open
Abstract
The ionic environment of body fluids influences nervous functions for maintaining homeostasis in organisms and ensures normal perceptual abilities and reflex activities. Neural reflex activities, such as limb movements, are closely associated with potassium ions (K+). In this study, we developed artificial synaptic devices based on ion concentration-adjustable gels for emulating various synaptic plasticities under different K+ concentrations in body fluids. In addition to performing essential synaptic functions, potential applications in information processing and associative learning using short- and long-term plasticity realized using ion concentration-adjustable gels are presented. Artificial synaptic devices can be used for constructing an artificial neural pathway that controls artificial muscle reflex activities and can be used for image pattern recognition. All tests show a strong relationship with ion homeostasis. These devices could be applied to neuromorphic robots and human-machine interfaces.
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Affiliation(s)
- Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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43
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He C, Tang Z, Liu L, Maier SA, Wang X, Ren H, Pan A. Nonlinear Boost of Optical Angular Momentum Selectivity by Hybrid Nanolaser Circuits. NANO LETTERS 2024; 24:1784-1791. [PMID: 38265953 DOI: 10.1021/acs.nanolett.3c04830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Selective control of light is essential for optical science and technology, with numerous applications. However, optical selectivity in the angular momentum of light has been quite limited, remaining constant by increasing the incident light power on previous passive optical devices. Here, we demonstrate a nonlinear boost of optical selectivity in both the spin and orbital angular momentum of light through near-field selective excitation of single-mode nanolasers. Our designed hybrid nanolaser circuits consist of plasmonic metasurfaces and individually placed perovskite nanowires, enabling subwavelength focusing of angular-momentum-distinctive plasmonic fields and further selective excitation of nanolasers in nanowires. The optically selected nanolaser with a nonlinear increase of light emission greatly enhances the baseline optical selectivity offered by the metasurface from about 0.4 up to near unity. Our demonstrated hybrid nanophotonic platform may find important applications in all-optical logic gates and nanowire networks, ultrafast optical switches, nanophotonic detectors, and on-chip optical and quantum information processing.
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Affiliation(s)
- Chenglin He
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Zilan Tang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Liang Liu
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Stefan A Maier
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
- Department of Physics, Imperial College London, London SW7 2AZ, U.K
| | - Xiaoxia Wang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Haoran Ren
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha 410081, P. R. China
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44
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Maity K, Dayen JF, Doudin B, Gumeniuk R, Kundys B. Graphene Magnetoresistance Control by Photoferroelectric Substrate. ACS NANO 2024. [PMID: 38284570 DOI: 10.1021/acsnano.3c07277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.
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Affiliation(s)
- Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Jean-François Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Roman Gumeniuk
- Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09596, Germany
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
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45
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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46
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Wu M, Zhuang Q, Yao K, Li J, Zhao G, Zhou J, Li D, Shi R, Xu G, Li Y, Zheng Z, Yang Z, Yu J, Yu X. Stretchable, skin‐conformable neuromorphic system for tactile sensory recognizing and encoding. INFOMAT 2023; 5. [DOI: 10.1002/inf2.12472] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 06/11/2023] [Indexed: 04/02/2025]
Abstract
AbstractExpanding wearable technologies to artificial tactile perception will be of significance for intelligent human–machine interface, as neuromorphic sensing devices are promising candidates due to their low energy consumption and highly effective operating properties. Skin‐compatible and conformable features are required for the purpose of realizing wearable artificial tactile perception. Here, we report an intrinsically stretchable, skin‐integrated neuromorphic system with triboelectric nanogenerators as tactile sensing and organic electrochemical transistors as information processing. The integrated system provides desired sensing, synaptic, and mechanical characteristics, such as sensitive response (~0.04 kPa−1) to low‐pressure, short‐ and long‐term synaptic plasticity, great switching endurance (>10 000 pulses), symmetric weight update, together with high stretchability of 100% strain. With neural encoding, demonstrations are capable of recognizing, extracting, and encoding features of tactile information. This work provides a feasible approach to wearable, skin‐conformable neuromorphic sensing system with great application prospects in intelligent robotics and replacement prosthetics.
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Affiliation(s)
- Mengge Wu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China (UESTC) Chengdu the People's Republic of China
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
| | - Qiuna Zhuang
- Laboratory for Advanced Interfacial Materials and Devices School of Fashion and Textiles, The Hong Kong Polytechnic University Hong Kong the People's Republic of China
| | - Kuanming Yao
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
| | - Jian Li
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
- Hong Kong Center for Cerebra‐Cardiovascular Health Engineering, Hong Kong Science Park Hong Kong the People's Republic of China
| | - Guangyao Zhao
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
| | - Jingkun Zhou
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
- Hong Kong Center for Cerebra‐Cardiovascular Health Engineering, Hong Kong Science Park Hong Kong the People's Republic of China
| | - Dengfeng Li
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
- Hong Kong Center for Cerebra‐Cardiovascular Health Engineering, Hong Kong Science Park Hong Kong the People's Republic of China
| | - Rui Shi
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
| | - Guoqiang Xu
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
| | - Yingchun Li
- College of Science, Harbin Institute of Technology Shenzhen the People's Republic of China
| | - Zijian Zheng
- Laboratory for Advanced Interfacial Materials and Devices School of Fashion and Textiles, The Hong Kong Polytechnic University Hong Kong the People's Republic of China
| | - Zhihui Yang
- Department of Pathology The Affiliated Hospital of Southwest Medical University Luzhou the People's Republic of China
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China (UESTC) Chengdu the People's Republic of China
| | - Xinge Yu
- Department of Biomedical Engineering City University of Hong Kong Hong Kong the People's Republic of China
- Hong Kong Center for Cerebra‐Cardiovascular Health Engineering, Hong Kong Science Park Hong Kong the People's Republic of China
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47
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Kweon H, Kim JS, Kim S, Kang H, Kim DJ, Choi H, Roe DG, Choi YJ, Lee SG, Cho JH, Kim DH. Ion trap and release dynamics enables nonintrusive tactile augmentation in monolithic sensory neuron. SCIENCE ADVANCES 2023; 9:eadi3827. [PMID: 37851813 PMCID: PMC10584339 DOI: 10.1126/sciadv.adi3827] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 09/14/2023] [Indexed: 10/20/2023]
Abstract
An iontronic-based artificial tactile nerve is a promising technology for emulating the tactile recognition and learning of human skin with low power consumption. However, its weak tactile memory and complex integration structure remain challenging. We present an ion trap and release dynamics (iTRD)-driven, neuro-inspired monolithic artificial tactile neuron (NeuroMAT) that can achieve tactile perception and memory consolidation in a single device. Through the tactile-driven release of ions initially trapped within iTRD-iongel, NeuroMAT only generates nonintrusive synaptic memory signals when mechanical stress is applied under voltage stimulation. The induced tactile memory is augmented by auxiliary voltage pulses independent of tactile sensing signals. We integrate NeuroMAT with an anthropomorphic robotic hand system to imitate memory-based human motion; the robust tactile memory of NeuroMAT enables the hand to consistently perform reliable gripping motion.
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Affiliation(s)
- Hyukmin Kweon
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joo Sung Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Seongchan Kim
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA
| | - Haisu Kang
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Dong Jun Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Hanbin Choi
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seung Geol Lee
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
- Department of Organic Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Do Hwan Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Republic of Korea
- Clean-Energy Research Institute, Hanyang University, Seoul 04763, Republic of Korea
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48
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Xu H, Shang D, Luo Q, An J, Li Y, Wu S, Yao Z, Zhang W, Xu X, Dou C, Jiang H, Pan L, Zhang X, Wang M, Wang Z, Tang J, Liu Q, Liu M. A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing. Nat Commun 2023; 14:6385. [PMID: 37821427 PMCID: PMC10567726 DOI: 10.1038/s41467-023-42172-y] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 10/03/2023] [Indexed: 10/13/2023] Open
Abstract
Neuromorphic computing aims to emulate the computing processes of the brain by replicating the functions of biological neural networks using electronic counterparts. One promising approach is dendritic computing, which takes inspiration from the multi-dendritic branch structure of neurons to enhance the processing capability of artificial neural networks. While there has been a recent surge of interest in implementing dendritic computing using emerging devices, achieving artificial dendrites with throughputs and energy efficiency comparable to those of the human brain has proven challenging. In this study, we report on the development of a compact and low-power neurotransistor based on a vertical dual-gate electrolyte-gated transistor (EGT) with short-term memory characteristics, a 30 nm channel length, a record-low read power of ~3.16 fW and a biology-comparable read energy of ~30 fJ. Leveraging this neurotransistor, we demonstrate dendrite integration as well as digital and analog dendritic computing for coincidence detection. We also showcase the potential of neurotransistors in realizing advanced brain-like functions by developing a hardware neural network and demonstrating bio-inspired sound localization. Our results suggest that the neurotransistor-based approach may pave the way for next-generation neuromorphic computing with energy efficiency on par with those of the brain.
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Affiliation(s)
- Han Xu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Dashan Shang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China.
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Qing Luo
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie An
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Li
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuyu Wu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhihong Yao
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Woyu Zhang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoxin Xu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chunmeng Dou
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hao Jiang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Liyang Pan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Xumeng Zhang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Ming Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, Hong Kong
| | - Jianshi Tang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
| | - Qi Liu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China.
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China.
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China.
| | - Ming Liu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100049, China
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
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49
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Han J, Lee J, Kim Y, Kim YB, Yun S, Lee S, Yu J, Lee KJ, Myung H, Choi Y. 3D Neuromorphic Hardware with Single Thin-Film Transistor Synapses Over Single Thin-Body Transistor Neurons by Monolithic Vertical Integration. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302380. [PMID: 37712147 PMCID: PMC10602577 DOI: 10.1002/advs.202302380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Revised: 07/24/2023] [Indexed: 09/16/2023]
Abstract
Neuromorphic hardware with a spiking neural network (SNN) can significantly enhance the energy efficiency for artificial intelligence (AI) functions owing to its event-driven and spatiotemporally sparse operations. However, an artificial neuron and synapse based on complex complementary metal-oxide-semiconductor (CMOS) circuits limit the scalability and energy efficiency of neuromorphic hardware. In this work, a neuromorphic module is demonstrated composed of synapses over neurons realized by monolithic vertical integration. The synapse at top is a single thin-film transistor (1TFT-synapse) made of poly-crystalline silicon film and the neuron at bottom is another single transistor (1T-neuron) made of single-crystalline silicon. Excimer laser annealing (ELA) is applied to activate dopants for the 1TFT-synapse at the top and rapid thermal annealing (RTA) is applied to do so for the 1T-neuron at the bottom. Internal electro-thermal annealing (ETA) via the generation of Joule heat is also used to enhance the endurance of the 1TFT-synapse without transferring heat to the 1T-neuron at the bottom. As neuromorphic vision sensing, classification of American Sign Language (ASL) is conducted with the fabricated neuromorphic module. Its classification accuracy on ASL is ≈92.3% even after 204 800 update pulses.
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Affiliation(s)
- Joon‐Kyu Han
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Jung‐Woo Lee
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
- SK Hynix Inc.Icheon17336Republic of Korea
| | - Yeeun Kim
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Young Bin Kim
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Seong‐Yun Yun
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Sang‐Won Lee
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Ji‐Man Yu
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Hyun Myung
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Yang‐Kyu Choi
- School of Electrical EngineeringKorea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
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50
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Chen X, Sun YF, Wu X, Shi S, Wang Z, Zhang J, Fang WH, Huang W. Breaking the Trade-Off Between Polymer Dielectric Constant and Loss via Aluminum Oxo Macrocycle Dopants for High-Performance Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2306260. [PMID: 37660306 DOI: 10.1002/adma.202306260] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 08/24/2023] [Indexed: 09/05/2023]
Abstract
The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2 V-1 s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.
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Affiliation(s)
- Xiaowei Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Yi-Fan Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Xiaosong Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, Hong Kong
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, Hong Kong
| | - Jian Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Wei-Hui Fang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Weiguo Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
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