1
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Lee WG, Lee JH. A Deterministic Method to Construct a Common Supercell Between Two Similar Crystalline Surfaces. SMALL METHODS 2024:e2400579. [PMID: 39192466 DOI: 10.1002/smtd.202400579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Revised: 08/04/2024] [Indexed: 08/29/2024]
Abstract
Here, a deterministic algorithm is proposed, that is capable of constructing a common supercell between two similar crystalline surfaces without scanning all possible cases. Using the complex plane, the 2D lattice is defined as the 2D complex vector. Then, the relationship between two surfaces becomes the eigenvector-eigenvalue relation where an operator corresponds to a transformation matrix. It is shown that this transformation matrix can be directly determined from the lattice parameters and rotation angle of the two given crystalline surfaces with O(log Nmax) time complexity, where Nmax is the maximum index of repetition matrix elements. This process is much faster than the conventional brute force approach (O ( N max 4 ) $O(N_{\mathrm{max}}^4)$ ). By implementing the method in Python code, experimental 2D heterostructures and their moiré patterns and additionally find new moiré patterns that have not yet been reported are successfully generated. According to the density functional theory (DFT) calculations, some of the new moiré patterns are expected to be as stable as experimentally-observed moiré patterns. Taken together, it is believed that the method can be widely applied as a useful tool for designing new heterostructures with interesting properties.
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Affiliation(s)
- Weon-Gyu Lee
- Computational Science Research Center, Korean Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- inCerebro Co., Ltd, Seoul, 06234, South Korea
| | - Jung-Hoon Lee
- Computational Science Research Center, Korean Institute of Science and Technology (KIST), Seoul, 02792, South Korea
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2
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Xu Z, Zhu Y, Wang Y, Li X, Liu Q, Chen K, Wang J, Jiang Y, Chen L. Tailoring Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2403852. [PMID: 38984469 DOI: 10.1002/advs.202403852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 06/10/2024] [Indexed: 07/11/2024]
Abstract
Chiral spin textures, as exotic phases in magnetic materials, hold immense promise for revolutionizing logic, and memory applications. Recently, chiral spin textures have been observed in centrosymmetric magnetic insulators (FMI), due to an interfacial Dzyaloshinskii-Moriya interaction (iDMI). However, the source and origin of this iDMI remain enigmatic in magnetic insulator systems. Here, the source and origin of the iDMI in Pt/Y3Fe5O12 (YIG)/substrate structures are deeply delved by examining the spin-Hall topological Hall effect (SH-THE), an indication of chiral spin textures formed due to an iDMI. Through carefully modifying the interfacial chemical composition of Pt/YIG/substrate with a nonmagnetic Al3+ doping, the obvious dependence of SH-THE on the interfacial chemical composition for both the heavy metal (HM)/FMI and FMI/substrate interfaces is observed. The results reveal that both interfaces contribute to the strength of the iDMI, and the iDMI arises due to strong spin-orbit coupling and inversion symmetry breaking at both interfaces in HM/FMI/substrate. Importantly, it is shown that nonmagnetic substitution and interface engineering can significantly tune the SH-THE and iDMI in ferrimagnetic iron garnets. The approach offers a viable route to tailor the iDMI and associated chiral spin textures in low-damping insulating magnetic oxides, thus advancing the field of spintronics.
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Affiliation(s)
- Zedong Xu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, China
| | - Yuanmin Zhu
- School of Materials Science and Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Yuming Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xiaowen Li
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qi Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yong Jiang
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
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3
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Li R, Jin C, Zhang X, Qu J, Zheng D, He W, Yang F, Zheng R, Bai H. Angular-dependent magnetoresistance modulated by interfacial magnetic state in Pt/LSMO heterostructures. Phys Chem Chem Phys 2024; 26:16891-16897. [PMID: 38833218 DOI: 10.1039/d4cp01175a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
The interfaces between heavy metals and antiferromagnetic materials have garnered significant attention due to their interesting physical properties. La0.35Sr0.65MnO3 (LSMO), as a typical manganite, exhibits an antiferromagnetic ground state that can be controlled through epitaxial strain and interfacial spin-orbit coupling. In this work, we reported the diverse magnetoresistance, influenced by the interfacial magnetic state, in Pt (3 nm)/LSMO (6-20 nm) heterostructures. The strong spin-orbit coupling of Pt and Dzyaloshinskii-Moriya interaction alter the spin structure and enhance the electron scattering at the Pt/LSMO interface, resulting in positive magnetoresistance. The interfacial angular-dependent magnetoresistance modulated by the interfacial magnetic states was also observed in the Pt/LSMO (20 nm) heterostructures. Our findings contribute to a broader understanding of interfacial properties between heavy metals and antiferromagnetic manganites.
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Affiliation(s)
- Ruikang Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China.
| | - Chao Jin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China.
| | - Xingmo Zhang
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Jiangtao Qu
- Australian Centre for Microscopy & Microanalysis, The University of Sydney, Sydney, NSW 2006, Australia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Wenxue He
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China.
- Center for Joint Quantum Studies, School of Science, Tianjin University, Tianjin 300350, China
| | - Fan Yang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China.
- Center for Joint Quantum Studies, School of Science, Tianjin University, Tianjin 300350, China
| | - Rongkun Zheng
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China.
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4
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Yu J, Liu Y, Ke Y, Su J, Cao J, Li Z, Sun B, Bai H, Wang W. Observation of Topological Hall Effect in a Chemically Complex Alloy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308415. [PMID: 38265890 DOI: 10.1002/adma.202308415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 12/28/2023] [Indexed: 01/26/2024]
Abstract
The topological Hall effect (THE) is the transport response of chiral spin textures and thus can serve as a powerful probe for detecting and understanding these unconventional magnetic orders. So far, the THE is only observed in either noncentrosymmetric systems where spin chirality is stabilized by Dzyaloshinskii-Moriya interactions, or triangular-lattice magnets with Ruderman-Kittel-Kasuya-Yosida-type interactions. Here, a pronounced THE is observed in a Fe-Co-Ni-Mn chemically complex alloy with a simple face-centered cubic (fcc) structure across a wide range of temperatures and magnetic fields. The alloy is shown to have a strong magnetic frustration owing to the random occupation of magnetic atoms on the close-packed fcc lattice and the direct Heisenberg exchange interaction among atoms, as evidenced by the appearance of a reentrant spin glass state in the low-temperature regime and the first principles calculations. Consequently, THE is attributed to the nonvanishing spin chirality created by strong spin frustration under the external magnetic field, which is distinct from the mechanism responsible for the skyrmion systems, as well as geometrically frustrated magnets.
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Affiliation(s)
- Jihao Yu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuying Liu
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
| | - Yubin Ke
- Spallation Neutron Source Science Center, Dongguan, 523803, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiaqi Su
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
| | - Jingshan Cao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zian Li
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
| | - Baoan Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haiyang Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weihua Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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5
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Liu J, Gao X, Shi K, Zhang M, Wu J, Ukleev V, Radu F, Ji Y, Deng Z, Wei L, Hong Y, Hu S, Xiao W, Li L, Zhang Q, Wang Z, Wang L, Gan Y, Chen K, Liao Z. Hundred-Fold Enhancement in the Anomalous Hall Effect Induced by Hydrogenation. NANO LETTERS 2024; 24:1351-1359. [PMID: 38251855 DOI: 10.1021/acs.nanolett.3c04368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The anomalous Hall effect (AHE) is one of the most fascinating transport properties in condensed matter physics. However, the AHE magnitude, which mainly depends on net spin polarization and band topology, is generally small in oxides and thus limits potential applications. Here, we demonstrate a giant enhancement of AHE in a LaCoO3-induced 5d itinerant ferromagnet SrIrO3 by hydrogenation. The anomalous Hall resistivity and anomalous Hall angle, which are two of the most critical parameters in AHE-based devices, are found to increase to 62.2 μΩ·cm and 3%, respectively, showing an unprecedentedly large enhancement ratio of ∼10000%. Theoretical analysis suggests the key roles of Berry curvature in enhancing AHE. Furthermore, the hydrogenation concomitantly induces the significant elevation of Curie temperature from 75 to 160 K and 40-fold reinforcement of coercivity. Such giant regulation and very large AHE magnitude observed in SrIrO3 could pave the path for 5d oxide devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Ke Shi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Victor Ukleev
- Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Straße 15, Berlin 12489, Germany
| | - Florin Radu
- Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Straße 15, Berlin 12489, Germany
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhixiong Deng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Long Wei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Yuhao Hong
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Shilin Hu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Wen Xiao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Yulin Gan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
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6
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Fuentes V, Balcells L, Konstantinović Z, Martínez B, Pomar A. Evaluation of Sputtering Processes in Strontium Iridate Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:242. [PMID: 38334512 PMCID: PMC10856326 DOI: 10.3390/nano14030242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Revised: 01/19/2024] [Accepted: 01/20/2024] [Indexed: 02/10/2024]
Abstract
The growth of epitaxial thin films from the Ruddlesden-Popper series of strontium iridates by magnetron sputtering is analyzed. It was found that, even using a non-stoichiometric target, the films formed under various conditions were consistently of the perovskite-like n = ∞ SrIrO3 phase, with no evidence of other RP series phases. A detailed inspection of the temperature-oxygen phase diagram underscored that kinetics mechanisms prevail over thermodynamics considerations. The analysis of the angular distribution of sputtered iridium and strontium species indicated clearly different spatial distribution patterns. Additionally, significant backsputtering was detected at elevated temperatures. Thus, it is assumed that the interplay between these two kinetic phenomena is at the origin of the preferential nucleation of the SrIrO3 phase. In addition, strategies for controlling cation stoichiometry off-axis have also been explored. Finally, the long-term stability of the films has been demonstrated.
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Affiliation(s)
- Víctor Fuentes
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Lluis Balcells
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Zorica Konstantinović
- Center for Solid State Physics and New Materials, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
| | - Benjamín Martínez
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Alberto Pomar
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
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7
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Liu X, Zhang D, Deng Y, Jiang N, Zhang E, Shen C, Chang K, Wang K. Tunable Spin Textures in a Kagome Antiferromagnetic Semimetal via Symmetry Design. ACS NANO 2024; 18:1013-1021. [PMID: 38147457 DOI: 10.1021/acsnano.3c10187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Kagome antiferromagnetic semimetals such as Mn3Sn have attracted extensive attention for their potential application in antiferromagnetic spintronics. Realizing high manipulation of kagome antiferromagnetic spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable spin textures of Mn3Sn through symmetry design by controlling alternate Mn3Sn and heavy-metal Pt thicknesses. The various topological spin textures were predicted with theoretical simulations, and the skyrmion-induced topological Hall effect, strong spin-dependent scattering, and vertical gradient of spin states were obtained by magnetotransport and magnetic circular dichroism (MCD) spectroscopy measurements in Mn3Sn/Pt heterostructures. Our work provides an effective strategy for the innovative design of topological antiferromagnetic spintronic devices.
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Affiliation(s)
- Xionghua Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongcheng Deng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Nai Jiang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Enze Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kai Chang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Science, Beijing 100049, China
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8
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Shi W, Zheng J, Li Z, Wang M, Zhu Z, Zhang J, Zhang H, Chen Y, Hu F, Shen B, Chen Y, Sun J. Enhancing Interfacial Ferromagnetism and Magnetic Anisotropy of CaRuO 3 /SrTiO 3 Superlattices via Substrate Orientation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2308172. [PMID: 38037707 DOI: 10.1002/smll.202308172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/02/2023] [Indexed: 12/02/2023]
Abstract
Artificial oxide heterostructures have provided promising platforms for the exploration of emergent quantum phases with extraordinary properties. One of the most interesting phenomena is the interfacial magnetism formed between two non-magnetic compounds. Here, a robust ferromagnetic phase emerged at the (111)-oriented heterointerface between paramagnetic CaRuO3 and diamagnetic SrTiO3 is reported. The Curie temperature is as high as ≈155 K and the saturation magnetization is as large as ≈1.3 µB per formula unit for the (111)-CaRuO3 /SrTiO3 superlattices, which are obviously superior to those of the (001)-oriented counterparts and are comparable to the typical itinerant ferromagnet SrRuO3 . A strong in-plane magnetic anisotropy with six-fold symmetry is further revealed by the anisotropic magnetoresistance measurements, presenting a large in-plane anisotropic field of 3.0-3.6 T. More importantly, the magnetic easy axis of the (111)-oriented superlattices can be effectively tuned from 〈11 2 ¯ $11\overline{2}$ 1〉 to 〈1 1 ¯ 0 $1 \bar{1}0$ 〉 directions by increasing the layer thickness of SrTiO3 . The findings demonstrate a feasible approach to enhance the interface coupling effect by varying the stacking orientation of oxide heterostructures. The tunable magnetic anisotropy also shows potential applications in low-power-consumption or exchange spring devices.
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Affiliation(s)
- Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jie Zheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhe Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mengqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhaozhao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Spintronics Institute, University of Jinan, Jinan, Shandong, 250022, China
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9
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Roy P, Zhang D, Mazza AR, Cucciniello N, Kunwar S, Zeng H, Chen A, Jia Q. Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures. NANOSCALE 2023; 15:17589-17598. [PMID: 37873761 DOI: 10.1039/d3nr02407e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Topologically protected non-trivial spin textures (e.g. skyrmions) give rise to a novel phenomenon called the topological Hall effect (THE) and have promising implications in future energy-efficient nanoelectronic and spintronic devices. Here, we have studied the Hall effect in SrRuO3/La0.42Ca0.58MnO3 (SRO/LCMO) bilayers. Our investigation suggests that pure SRO has hard and soft magnetic characteristics but the anomalous Hall effect (AHE) in SRO is governed by the high coercivity phase. We have shown that the proximity effect of a soft magnetic LCMO on SRO plays a critical role in interfacial magnetic coupling and transport properties in SRO. Upon reducing the SRO thickness in the bilayer, the proximity effect becomes the dominant feature, enhancing the magnitude and temperature range of THE-like signatures. The THE-like features in bilayers can be explained by a diffusive Berry phase transition model in the presence of an emergent magnetic state due to interface coupling. This work provides an alternative understanding of THE-like signatures and their manipulation in SRO-based heterostructures, bilayers and superlattices.
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Affiliation(s)
- Pinku Roy
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Di Zhang
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Alessandro R Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Nicholas Cucciniello
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Sundar Kunwar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Hao Zeng
- Department of Physics, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
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10
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Chen X, Wang H, Li M, Hao Q, Cai M, Dai H, Chen H, Xing Y, Liu J, Wang X, Zhai T, Zhou X, Han JB. Manipulation and Optical Detection of Artificial Topological Phenomena in 2D Van der Waals Fe 5 GeTe 2 /MnPS 3 Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2207617. [PMID: 37327250 PMCID: PMC10401167 DOI: 10.1002/advs.202207617] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 04/20/2023] [Indexed: 06/18/2023]
Abstract
2D ferromagnet is a good platform to investigate topological effects and spintronic devices owing to its rich spin structures and excellent external-field tunability. The appearance of the topological Hall Effect (THE) is often regarded as an important sign of the generation of chiral spin textures, like magnetic vortexes or skyrmions. Here, interface engineering and an in-plane current are used to modulate the magnetic properties of the nearly room-temperature 2D ferromagnet Fe5 GeTe2 . An artificial topology phenomenon is observed in the Fe5 GeTe2 /MnPS3 heterostructure by using both anomalous Hall Effect and reflective magnetic circular dichroism (RMCD) measurements. Through tuning the applied current and the RMCD laser wavelength, the amplitude of the humps and dips observed in the hysteresis loops can be modulated accordingly. Magnetic field-dependent hysteresis loops demonstrate that the observed artificial topological phenomena are induced by the generation and annihilation of the magnetic domains. This work provides an optical method for investigating the topological-like effects in magnetic structures and proposes an effective way to modulate the magnetic properties of magnetic materials, which is important for developing magnetic and spintronic devices in van der Waals magnetic materials.
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Affiliation(s)
- Xiaodie Chen
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Manshi Li
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Qinghua Hao
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Menghao Cai
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hongwei Dai
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hongjing Chen
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuntong Xing
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jie Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xia Wang
- School of Elementary Education, Wuhan City Polytechnic College, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jun-Bo Han
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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11
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Hao L, Yi D, Wang M, Liu J, Yu P. Emergent quantum phenomena in atomically engineered iridate heterostructures. FUNDAMENTAL RESEARCH 2023; 3:313-321. [PMID: 38933764 PMCID: PMC11197666 DOI: 10.1016/j.fmre.2022.09.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 09/22/2022] [Accepted: 09/25/2022] [Indexed: 11/06/2022] Open
Abstract
Over the last few years, researches in iridates have developed into an exciting field with the discovery of numerous emergent phenomena, interesting physics, and intriguing functionalities. Among the studies, iridate-based artificial structures play a crucial role owing to their extreme flexibility and tunability in lattice symmetry, chemical composition, and crystal dimensionality. In this article, we present an overview of the recent progress regarding iridate-based artificial structures. We first explicitly introduce several essential concepts in iridates. Then, we illustrate important findings on representative SrIrO3/SrTiO3 superlattices, heterostructures comprised of SrIrO3 and magnetic oxides, and their response to external electric-field stimuli. Finally, we comment on existing problems and promising future directions in this exciting field.
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Affiliation(s)
- Lin Hao
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Di Yi
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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12
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Schöpf J, Thampi A, Milde P, Ivaneyko D, Kondovych S, Kononenko DY, Eng LM, Jin L, Yang L, Wysocki L, van Loosdrecht PHM, Richter K, Yershov KV, Wolf D, Lubk A, Lindfors-Vrejoiu I. Néel Skyrmion Bubbles in La 0.7Sr 0.3Mn 1-xRu xO 3 Multilayers. NANO LETTERS 2023; 23:3532-3539. [PMID: 37018631 DOI: 10.1021/acs.nanolett.3c00693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Ferromagnetic La0.7Sr0.3Mn1-xRuxO3 epitaxial multilayers with controlled variation of the Ru/Mn content were synthesized to engineer canted magnetic anisotropy and variable exchange interactions, and to explore the possibility of generating a Dzyaloshinskii-Moriya interaction. The ultimate aim of the multilayer design is to provide the conditions for the formation of domains with nontrivial magnetic topology in an oxide thin film system. Employing magnetic force microscopy and Lorentz transmission electron microscopy in varying perpendicular magnetic fields, magnetic stripe domains separated by Néel-type domain walls as well as Néel skyrmions smaller than 100 nm in diameter were observed. These findings are consistent with micromagnetic modeling, taking into account a sizable Dzyaloshinskii-Moriya interaction arising from the inversion symmetry breaking and possibly from strain effects in the multilayer system.
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Affiliation(s)
- Jörg Schöpf
- II. Physics Institute, University of Cologne, 50937 Cologne, Germany
| | - Arsha Thampi
- Institute for Solid State Research, IFW Dresden, 01069 Dresden, Germany
| | - Peter Milde
- Institute of Applied Physics, TU Dresden, 01062 Dresden, Germany
| | - Dmytro Ivaneyko
- Institute of Applied Physics, TU Dresden, 01062 Dresden, Germany
| | - Svitlana Kondovych
- Institute for Theoretical Solid State Physics, IFW Dresden, 01069 Dresden, Germany
| | - Denys Y Kononenko
- Institute for Theoretical Solid State Physics, IFW Dresden, 01069 Dresden, Germany
| | - Lukas M Eng
- Institute of Applied Physics, TU Dresden, 01062 Dresden, Germany
- ct.qmat, Dresden-Würzburg Cluster of Excellence-EXC 2147, TU Dresden, 01062 Dresden, Germany
| | - Lei Jin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Lin Yang
- II. Physics Institute, University of Cologne, 50937 Cologne, Germany
| | - Lena Wysocki
- II. Physics Institute, University of Cologne, 50937 Cologne, Germany
| | | | - Kornel Richter
- Faculty of Sciences, Pavol Jozef Safarik University, Park Angelinum 9, 041 54 Kosice, Slovakia
| | - Kostiantyn V Yershov
- Institute for Theoretical Solid State Physics, IFW Dresden, 01069 Dresden, Germany
- Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine, 03143 Kyiv, Ukraine
| | - Daniel Wolf
- Institute for Solid State Research, IFW Dresden, 01069 Dresden, Germany
| | - Axel Lubk
- Institute for Solid State Research, IFW Dresden, 01069 Dresden, Germany
- Institute of Solid State and Materials Physics, TU Dresden, 01062 Dresden, Germany
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13
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Li X, Han B, Zhu R, Shi R, Wu M, Sun Y, Li Y, Liu B, Wang L, Zhang J, Tan C, Gao P, Bai X. Dislocation-tuned ferroelectricity and ferromagnetism of the BiFeO 3/SrRuO 3 interface. Proc Natl Acad Sci U S A 2023; 120:e2213650120. [PMID: 36940334 PMCID: PMC10068816 DOI: 10.1073/pnas.2213650120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 02/05/2023] [Indexed: 03/22/2023] Open
Abstract
Misfit dislocations at a heteroepitaxial interface produce huge strain and, thus, have a significant impact on the properties of the interface. Here, we use scanning transmission electron microscopy to demonstrate a quantitative unit-cell-by-unit-cell mapping of the lattice parameters and octahedral rotations around misfit dislocations at the BiFeO3/SrRuO3 interface. We find that huge strain field is achieved near dislocations, i.e., above 5% within the first three unit cells of the core, which is typically larger than that achieved from the regular epitaxy thin-film approach, thus significantly altering the magnitude and direction of the local ferroelectric dipole in BiFeO3 and magnetic moments in SrRuO3 near the interface. The strain field and, thus, the structural distortion can be further tuned by the dislocation type. Our atomic-scale study helps us to understand the effects of dislocations in this ferroelectricity/ferromagnetism heterostructure. Such defect engineering allows us to tune the local ferroelectric and ferromagnetic order parameters and the interface electromagnetic coupling, providing new opportunities to design nanosized electronic and spintronic devices.
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Affiliation(s)
- Xiaomei Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- School of Integrated Circuits, East China Normal University, Shanghai200241, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
| | - Bo Han
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Ruixue Zhu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Ruochen Shi
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Mei Wu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yuanwei Sun
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yuehui Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Bingyao Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Lifen Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Jingmin Zhang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Congbing Tan
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan411201, China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
- Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing100871, China
- Hefei National Laboratory, Hefei230088, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
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14
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Liu R, Si L, Niu W, Zhang X, Chen Z, Zhu C, Zhuang W, Chen Y, Zhou L, Zhang C, Wang P, Song F, Tang L, Xu Y, Zhong Z, Zhang R, Wang X. Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211612. [PMID: 36626850 DOI: 10.1002/adma.202211612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 01/06/2023] [Indexed: 06/17/2023]
Abstract
Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO3 has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO3- δ . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO3 substrates to SrRuO3- δ ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics.
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Affiliation(s)
- Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an, 710127, China
- Institute of Solid State Physics, Vienna University of Technology, Vienna, 1040, Austria
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Changzheng Zhu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Chunchen Zhang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Peng Wang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Fengqi Song
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Lin Tang
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Department of Physics, Xiamen University, Xiamen, 316005, China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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15
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Guo S, Wang B, Wolf D, Lubk A, Xia W, Wang M, Xiao Y, Cui J, Pravarthana D, Dou Z, Leistner K, Li RW, Hühne R, Nielsch K. Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response. ACS NANO 2023; 17:2517-2528. [PMID: 36651833 DOI: 10.1021/acsnano.2c10200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La0.7Sr0.3MnO3 thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.
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Affiliation(s)
- Shanshan Guo
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- Leibniz IFW Dresden, Dresden 01069, Germany
| | - Baomin Wang
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- School of Physical Science and Technology, Ningbo University, Ningbo 315201, People's Republic of China
| | | | - Axel Lubk
- Leibniz IFW Dresden, Dresden 01069, Germany
- Institute of Solid State and Materials Physics, TU Dresden, Dresden 01069, Germany
| | - Weixing Xia
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Mingkun Wang
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Yao Xiao
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Junfeng Cui
- Key Laboratory of Marine Materials and Related Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Dhanapal Pravarthana
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Zehua Dou
- Leibniz IFW Dresden, Dresden 01069, Germany
| | - Karin Leistner
- Leibniz IFW Dresden, Dresden 01069, Germany
- Electrochemical Sensors and Energy Storage, Faculty of Natural Sciences, Institute of Chemistry, TU Chemnitz, Chemnitz 09111, Germany
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
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16
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Han H, Zhou H, Guillemard C, Valvidares M, Sharma A, Li Y, Sharma AK, Kostanovskiy I, Ernst A, Parkin SSP. Reversal of Anomalous Hall Effect and Octahedral Tilting in SrRuO 3 Thin Films via Hydrogen Spillover. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207246. [PMID: 36271718 DOI: 10.1002/adma.202207246] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 09/18/2022] [Indexed: 06/16/2023]
Abstract
The perovskite SrRuO3 (SRO) is a strongly correlated oxide whose physical and structural properties are strongly intertwined. Notably, SRO is an itinerant ferromagnet that exhibits a large anomalous Hall effect (AHE) whose sign can be readily modified. Here, a hydrogen spillover method is used to tailor the properties of SRO thin films via hydrogen incorporation. It is found that the magnetization and Curie temperature of the films are strongly reduced and, at the same time, the structure evolves from an orthorhombic to a tetragonal phase as the hydrogen content is increased up to ≈0.9 H per SRO formula unit. The structural phase transition is shown, via in situ crystal truncation rod measurements, to be related to tilting of the RuO6 octahedral units. The significant changes observed in magnetization are shown, via density functional theory (DFT), to be a consequence of shifts in the Fermi level. The reported findings provide new insights into the physical properties of SRO via tailoring its lattice symmetry and emergent physical phenomena via the hydrogen spillover technique.
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Affiliation(s)
- Hyeon Han
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Charles Guillemard
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Arpit Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Yan Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ankit K Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Ilya Kostanovskiy
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Arthur Ernst
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Institute for Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Stuart S P Parkin
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
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17
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Jin Q, Zhang Q, Bai H, Huon A, Charlton T, Chen S, Lin S, Hong H, Cui T, Wang C, Guo H, Gu L, Zhu T, Fitzsimmons MR, Jin KJ, Wang S, Guo EJ. Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208221. [PMID: 36300813 DOI: 10.1002/adma.202208221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 10/19/2022] [Indexed: 06/16/2023]
Abstract
Interfacial magnetism stimulates the discovery of giant magnetoresistance (MR) and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides have seldom been explored due to the difficulty in synthesizing high-quality nitride films with correct compositions. Here, the fabrication of single-crystalline ferromagnetic Fe3 N thin films with precisely controlled thicknesses is reported. As film thickness decreases, the magnetization dramatically deteriorates, and the electronic state changes from metallic to insulating. Strikingly, the high-temperature ferromagnetism is maintained in a Fe3 N layer with a thickness down to 2 u.c. (≈8 Å). The MR exhibits a strong in-plane anisotropy; meanwhile, the anomalous Hall resistivity reverses its sign when the Fe3 N layer thickness exceeds 5 u.c. Furthermore, a sizable exchange bias is observed at the interfaces between a ferromagnetic Fe3 N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using the cylinder diameter engineering technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives toward practical applications.
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Affiliation(s)
- Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan, 523803, P. R. China
| | - Amanda Huon
- Department of Physics, Saint Joseph's University, Philadelphia, PA, 19131, USA
| | - Timothy Charlton
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ting Cui
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Haizhong Guo
- Key Laboratory of Material Physics & School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Lin Gu
- National Center for Electron Microscopy in Beijing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Michael R Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Shanmin Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
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18
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Zhang C, Liu C, Zhang J, Yuan Y, Wen Y, Li Y, Zheng D, Zhang Q, Hou Z, Yin G, Liu K, Peng Y, Zhang XX. Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205967. [PMID: 36245330 DOI: 10.1002/adma.202205967] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Revised: 10/06/2022] [Indexed: 06/16/2023]
Abstract
Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr1+ x Te2 with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr1.53 Te2 with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.
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Affiliation(s)
- Chenhui Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Junwei Zhang
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Youyou Yuan
- Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Qiang Zhang
- Core Technology Platforms, New York University Abu Dhabi, Abu Dhabi, 129188, United Arab Emirates
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Gen Yin
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | - Kai Liu
- Physics Department, Georgetown University, Washington, DC, 20057, USA
| | - Yong Peng
- School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, China
| | - Xi-Xiang Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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19
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Liu J, Zhang X, Ji Y, Gao X, Wu J, Zhang M, Li L, Liu X, Yan W, Yao T, Yin Y, Wang L, Guo H, Cheng G, Wang Z, Gao P, Wang Y, Chen K, Liao Z. Controllable Itinerant Ferromagnetism in Weakly Correlated 5d SrIrO 3. J Phys Chem Lett 2022; 13:11946-11954. [PMID: 36534070 DOI: 10.1021/acs.jpclett.2c03313] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The weakly correlated nature of 5d oxide SrIrO3 determines its rare ferromagnetism, and the control of its magnetic order is even less studied. Tailoring structure distortion is currently a main route to tune the magnetic order of 5d iridates, but only for the spatially confined insulating counterparts. Here, we have realized ferromagnetic order in metallic SrIrO3 by construction of SrIrO3/ferromagnetic-insulator (LaCoO3) superlattices, which reveal a giant coercivity of ∼10 T and saturation field of ∼25 T with strong perpendicular magnetic anisotropy. The Curie temperature of SrIrO3 can be controlled by engineering interface charge transfer, which is confirmed by Hall effect measurements collaborating with EELS and XAS. Besides, the noncoplanar spin texture is captured, which is caused by interfacial Dzyaloshinskii-Moriya interactions as well. These results indicate controllable itinerant ferromagnetism and an emergent topological magnetic state in strong spin-orbit coupled semimetal SrIrO3, showing great potential to develop efficient spintronic devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xinxin Zhang
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaokang Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Tao Yao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei230026, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai200433, China
| | - Guanglei Cheng
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei230026, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yilin Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
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20
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Liang J, Chshiev M, Fert A, Yang H. Gradient-Induced Dzyaloshinskii-Moriya Interaction. NANO LETTERS 2022; 22:10128-10133. [PMID: 36520645 DOI: 10.1021/acs.nanolett.2c03973] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The Dzyaloshinskii-Moriya interaction (DMI) that arises in the magnetic systems with broken inversion symmetry plays an essential role in topological spintronics. Here, by means of atomistic spin calculations, we study an intriguing type of DMI (g-DMI) that emerges in the films with composition gradient. We show that both the strength and chirality of g-DMI can be controlled by the composition gradient even in the disordered system. The layer-resolved analysis of g-DMI unveils its additive nature inside the bulk layers and clarifies the linear thickness dependence of g-DMI observed in experiments. Furthermore, we demonstrate the g-DMI-induced chiral magnetic structures, such as spin spirals and skyrmions, and the g-DMI driven field-free spin-orbit torque (SOT) switching, both of which are crucial toward practical device application. These results elucidate the underlying mechanisms of g-DMI and open up a new way to engineer the topological magnetic textures.
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Affiliation(s)
- Jinghua Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut Universitaire de France, Paris 75231, France
| | - Albert Fert
- Unité Mixte de Physique CNRS-Thales, Université Paris-Saclay, Palaiseau 91767, France
| | - Hongxin Yang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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21
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Shan W, Luo W. Interfacial charge transfer induced antiferromagnetic metals and magnetic phase transition in (CrO 2) m/(TaO 2) nsuperlattices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:035801. [PMID: 36351299 DOI: 10.1088/1361-648x/aca19a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Accepted: 11/09/2022] [Indexed: 06/16/2023]
Abstract
As a class of remarkable spintronic materials, intrinsic antiferromagnetic (AFM) metals are rare. The exploration and investigation of AFM metals are still in its infancy. Based on first-principles calculations, the interface-induced magnetic phenomena in the (CrO2)m/(TaO2)nsuperlattices are investigated, and a new series of AFM metals is predicted. Under different ratios ofm:nwith varying valence states of Cr, the (CrO2)m/(TaO2)nsuperlattices exhibit three different phases, including the AFM metal, the AFM semiconductor, and the ferromagnetic (FM) metal. In the AFM semiconducting phases, theintra-CrO2-monolayer magnetic exchange interaction is systematically discussed, corresponding tom = 1 orm = 2. Both the localization of the Cr 3 dorbitals and the crystal-field splitting are crucial for magnetic ordering in super-exchange interactions. Based on the analyses of the AFM semiconducting phases withm = 1 andm = 2, the mechanisms of AFM metallic phases with radios ofm:n<1/2and1/2<m:n<1/1are discussed in detail. Additionally, the AFM metallic superlattices can be tuned into a FM metallic phase by applying strain in thec-direction, such as a compression of 7% in the (CrO2)1/(TaO2)3superlattice, and a tensile strain of 7% in the (CrO2)2/(TaO2)3superlattice. The phase diagram of the (CrO2)m/(TaO2)nsuperlattices is obtained as a function of the layer thickness. This work provides new insights about realizing and manipulating AFM metals in artificial superlattices or heterostructures in experiments.
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Affiliation(s)
- Wanfei Shan
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Weidong Luo
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
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22
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Wang Q, Gu Y, Chen C, Pan F, Song C. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities. J Phys Chem Lett 2022; 13:10065-10075. [PMID: 36264651 DOI: 10.1021/acs.jpclett.2c02634] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of mutually coupled degrees of freedom and tunable magneto-ionic properties. In this Perspective, we consider oxide spintronics as a knot of physics and chemistry and mainly discuss two current hot topics: spin-charge interconversion and magneto-ionics. First, spin-charge interconversion is focused on oxide films and heterostructures including 4d/5d heavy metal oxides (e.g., SrIrO3) and two-dimensional electron gases. Based on spin-charge interconversion, charge currents can be transformed to spin currents and generate spin-orbit torque in oxide/metal and all-oxide heterostructures. Additionally, the voltage control of magnetism in TMOs by the magneto-ionic pathway has rapidly accelerated during the past few years due to the versatile advantages of effective control, nonvolatile nature, low power cost, etc. Typical magneto-ionic oxide systems and corresponding physicochemical mechanisms will be discussed. Finally, further developments of oxide spintronics are envisioned, including material discovery, physics exploration, device design, and manipulation methods.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
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23
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Tai L, Dai B, Li J, Huang H, Chong SK, Wong KL, Zhang H, Zhang P, Deng P, Eckberg C, Qiu G, He H, Wu D, Xu S, Davydov A, Wu R, Wang KL. Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect. ACS NANO 2022; 16:17336-17346. [PMID: 36126321 DOI: 10.1021/acsnano.2c08155] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In transport, the topological Hall effect (THE) presents itself as nonmonotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when the anomalous Hall effect (AHE) is also present, the coexistence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here, we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE" or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE + AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: (1) minor loops, (2) temperature dependence, and (3) gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". In addition, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the nonmonotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise caution and use these methods for careful examination in order to ascertain the genuine THE.
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Affiliation(s)
- Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Jie Li
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Hanshen Huang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Su Kong Chong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Kin L Wong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Huairuo Zhang
- Theiss Research, Inc., La Jolla, California 92037, United States
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Peng Zhang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Peng Deng
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Christopher Eckberg
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
- Fibertek, Inc., Herndon, Virginia 20171, United States
- US Army Research Laboratory, Adelphi, Maryland 20783, United States
- US Army Research Laboratory, Playa Vista, California 90094, United States
| | - Gang Qiu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Haoran He
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Di Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Shijie Xu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
- Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Albert Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
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24
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Liu P, Miao J, Liu Q, Xu Z, Wu Y, Meng K, Xu X, Jiang Y. Large non-volatile modulation of perpendicular magnetic anisotropy in Pb (Zr0.2Ti0.8) O3/SrRuO3. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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25
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Choi E, Sim KI, Burch KS, Lee YH. Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200186. [PMID: 35596612 PMCID: PMC9313546 DOI: 10.1002/advs.202200186] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.
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Affiliation(s)
- Eun‐Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kyung Ik Sim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kenneth S. Burch
- Department of PhysicsBoston College140 Commonwealth AveChestnut HillMA02467‐3804USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
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26
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Lee JW, Kim J, Eom K, Jeon J, Kim YC, Kim HS, Ahn YH, Kim S, Eom CB, Lee H. Strong Interfacial Charge Trapping in Ultrathin SrRuO 3 on SrTiO 3 Probed by Noise Spectroscopy. J Phys Chem Lett 2022; 13:5618-5625. [PMID: 35704419 DOI: 10.1021/acs.jpclett.2c01163] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
SrRuO3 (SRO) has emerged as a promising quantum material due to its exotic electron correlations and topological properties. In epitaxial SRO films, electron scattering against lattice phonons or defects has been considered as only a predominant mechanism accounting for electronic properties. Although the charge trapping by polar defects can also strongly influence the electronic behavior, it has often been neglected. Herein, we report strong interfacial charge trapping in ultrathin SRO films on SrTiO3 (STO) substrates probed by noise spectroscopy. We find that oxygen vacancies in the STO cause stochastic interfacial charge trapping, resulting in high electrical noise. Spectral analyses of the photoinduced noise prove that the oxygen vacancies buried deep in the STO can effectively contribute to the charge trapping process. These results unambiguously reveal that electron transport in ultrathin SRO films is dominated by the carrier number fluctuation that correlates with interfacial charge trapping.
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Affiliation(s)
- Jung-Woo Lee
- KIURI Institute, Yonsei University, Seoul 03722, Republic of Korea
| | - Jiyeong Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
| | - Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Jaeyoung Jeon
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Young Chul Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hwan Sik Kim
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Yeong Hwan Ahn
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Hyungwoo Lee
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
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27
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Bhowal S, Spaldin NA. Magnetoelectric Classification of Skyrmions. PHYSICAL REVIEW LETTERS 2022; 128:227204. [PMID: 35714233 DOI: 10.1103/physrevlett.128.227204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Accepted: 05/06/2022] [Indexed: 06/15/2023]
Abstract
We develop a general theory to classify magnetic skyrmions and related spin textures in terms of their magnetoelectric multipoles. Since magnetic skyrmions are now established in insulating materials, where the magnetoelectric multipoles govern the linear magnetoelectric response, our classification provides a recipe for manipulating the magnetic properties of skyrmions using applied electric fields. We apply our formalism to skyrmions and antiskyrmions of different helicities, as well as to magnetic bimerons, which are topologically, but not geometrically, equivalent to skyrmions. We show that the nonzero components of the magnetoelectric multipole and magnetoelectric response tensors are uniquely determined by the topology, helicity, and geometry of the spin texture. Therefore, we propose straightforward linear magnetoelectric response measurements as an alternative to Lorentz microscopy for characterizing insulating skyrmionic textures.
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Affiliation(s)
- Sayantika Bhowal
- Materials Theory, ETH Zurich, Wolfgang-Pauli-Strasse 27, 8093 Zurich, Switzerland
| | - Nicola A Spaldin
- Materials Theory, ETH Zurich, Wolfgang-Pauli-Strasse 27, 8093 Zurich, Switzerland
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28
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Abstract
Quantum anomalous Hall effect (QAHE) and magnetic skyrmion (SK), as two typical topological states in momentum (K) and real (R) spaces, attract much interest in condensed matter physics. However, the interplay between these two states remains to be explored. We propose that the interplay between QAHE and SK may generate an RK joint topological skyrmion (RK-SK), characterized by the SK surrounded by nontrivial chiral boundary states (CBSs). Furthermore, the emerging external field–tunable CBS in RK-SK could create additional degrees of freedom for SK manipulations, beyond the traditional SK. Meanwhile, external field can realize a rare topological phase transition between K and R spaces. Our work opens avenues for exploring unconventional quantum states and topological phase transitions in different spaces. Quantum anomalous Hall effect (QAHE) and magnetic skyrmion (SK) represent two typical topological states in momentum (K) and real (R) spaces, respectively. However, little is known about the interplay between these two states. Here, we propose that the coexistence of QAHE and SK may generate a previously unknown SK state, named the RK joint topological skyrmion (RK-SK), which is characterized by the SK surrounded by nontrivial chiral boundary states (CBSs). Interestingly, beyond the traditional SK state that can solely be used via creation or annihilation, the number and chirality of CBS in RK-SK can be tunable under external fields as demonstrated in Janus monolayer (ML) MnBi2X2Te2 (X= S, Se), creating additional degrees of freedom for SK-state manipulations. Moreover, it is also found that external fields can induce a continuous topology phase transition from K-space QAHE to R-space SK in ML MnBi2X2Te2, providing an ideal platform to understand the cross-over phenomena of multiple-space topologies.
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Yamanouchi M, Araki Y, Sakai T, Uemura T, Ohta H, Ieda J. Observation of topological Hall torque exerted on a domain wall in the ferromagnetic oxide SrRuO 3. SCIENCE ADVANCES 2022; 8:eabl6192. [PMID: 35427155 PMCID: PMC9012465 DOI: 10.1126/sciadv.abl6192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2021] [Accepted: 02/25/2022] [Indexed: 06/14/2023]
Abstract
In a ferromagnetic Weyl metal SrRuO3, a large effective magnetic field Heff exerted on a magnetic domain wall (DW) by current has been reported. We show that the ratio of Heff to current density exhibits nonmonotonic temperature dependence and surpasses those of conventional spin-transfer torques and spin-orbit torques. This enhancement is described well by topological Hall torque (THT), which is exerted on a DW by Weyl electrons emerging around Weyl points when an electric field is applied across the DW. The ratio of the Heff arising from the THT to current density is over one order of magnitude higher than that originating from spin-transfer torques and spin-orbit torques reported in metallic systems, showing that the THT may provide a better way for energy-efficient manipulation of magnetization in spintronics devices.
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Affiliation(s)
- Michihiko Yamanouchi
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
| | - Yasufumi Araki
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
| | - Takaki Sakai
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
| | - Tetsuya Uemura
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita-ku, Sapporo 001-0020, Japan
| | - Jun’ichi Ieda
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
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30
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Niu X, Chen BB, Zhong N, Xiang PH, Duan CG. Topological Hall effect in SrRuO 3thin films and heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:244001. [PMID: 35325882 DOI: 10.1088/1361-648x/ac60d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.
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Affiliation(s)
- Xu Niu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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31
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Xu Z, Liu Q, Ji Y, Li X, Li J, Wang J, Chen L. Strain-Tunable Interfacial Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Pt/Tm 3Fe 5O 12 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16791-16799. [PMID: 35362315 DOI: 10.1021/acsami.1c22942] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in heavy-metal/ferromagnet heterostructures enables to stabilize and manipulate novel topological spin textures, such as skyrmions, which arise as potential logic and memory devices for future information technology. Along these lines, we study in this work the topological spin textures in the films of magnetic insulators by detecting the spin-Hall topological Hall effect (SH-THE). The SH-THE presents obvious dependence of epitaxial strain in Pt/Tm3Fe5O12 (TmIG) bilayers deposited on a series of (111)-oriented garnet substrates, indicating that the topological spin textures can be tuned by epitaxial strain in this system. It is interesting to note that the room-temperature and low-field peak of SH-THE is also recorded within the Pt/TmIG bilayer configuration. We have also examined the interfacial DMI in the Pt/TmIG bilayers by an extended droplet model. The results indicate that the epitaxial strain can effectively change the interfacial DMI in this system, suggesting that the strain-induced modification of the interfacial DMI is the driving force for the SH-THE and topological spin textures in the Pt/TmIG bilayers. Our outcomes open new exciting avenues and opportunities in engineering chiral magnetism and examining the future skyrmion technology in magnetic insulators through the application of epitaxial strain.
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Affiliation(s)
- Zedong Xu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
- School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China
| | - Qi Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Yanjiang Ji
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Xiaowen Li
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Junxue Li
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
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32
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Chen P, Liu P, Wang Y, Li X, Yun J, Gao C. Strain-relaxation induced transverse resistivity anomaly in epitaxial films through lithography engineering. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:205801. [PMID: 35213847 DOI: 10.1088/1361-648x/ac58d8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Accepted: 02/25/2022] [Indexed: 06/14/2023]
Abstract
The exotic transverse resistivity in magnetic materials has received intense research because of possible new emergent physics. Here, we report the strain-relaxation induced transverse resistivity anomaly in Mn2CoAl epitaxial films through lithography engineering. The anomalous Hall resistivityρxyAHdecreases from 0.48 to 0.17μΩ cm at 10 K when the widths of the Hall bar decreases from 40 to 1 μm, and the temperature dependence ofρxyAHreverses for the 1.4 μm deep-etched samples. Importantly, Hall resistivity anomalies appear in the 1μm-wide and 1.4μm-wide deep-etched Hall bar samples, which can be well explained by the two-channel transport mechanism. We believe that these observations can be attributed to the strain relaxation effect when the Hall bar width is narrowed to around 1 μm. Our work shows that the induced strain relaxation can possibly lead to the alternation of the materials' electronic structure, and the size effect should be considered when the sample size is reduced to about 1 μm.
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Affiliation(s)
- Peng Chen
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Pei Liu
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Yongzuo Wang
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Xiaolin Li
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Jijun Yun
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Cunxu Gao
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 730000 Lanzhou, People's Republic of China
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33
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Takashiro T, Akiyama R, Kibirev IA, Matetskiy AV, Nakanishi R, Sato S, Fukasawa T, Sasaki T, Toyama H, Hiwatari KL, Zotov AV, Saranin AA, Hirahara T, Hasegawa S. Soft-Magnetic Skyrmions Induced by Surface-State Coupling in an Intrinsic Ferromagnetic Topological Insulator Sandwich Structure. NANO LETTERS 2022; 22:881-887. [PMID: 35084202 DOI: 10.1021/acs.nanolett.1c02952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A magnetic skyrmion induced on a ferromagnetic topological insulator (TI) is a real-space manifestation of the chiral spin texture in the momentum space and can be a carrier for information processing by manipulating it in tailored structures. Here, a sandwich structure containing two layers of a self-assembled ferromagnetic septuple-layer TI, Mn(Bi1-xSbx)2Te4 (MnBST), separated by quintuple layers of TI, (Bi1-xSbx)2Te3 (BST), is fabricated and skyrmions are observed through the topological Hall effect in an intrinsic magnetic topological insulator for the first time. The thickness of BST spacer layer is crucial in controlling the coupling between the gapped topological surface states in the two MnBST layers to stabilize the skyrmion formation. The homogeneous, highly ordered arrangement of the Mn atoms in the septuple-layer MnBST leads to a strong exchange interaction therein, which makes the skyrmions "soft magnetic". This would open an avenue toward a topologically robust rewritable magnetic memory.
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Affiliation(s)
- Takuya Takashiro
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
| | - Ryota Akiyama
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
| | - Ivan A Kibirev
- Institute of Automation and Control Processes, Vladivostok 690041, Russia
| | - Andrey V Matetskiy
- Institute of Automation and Control Processes, Vladivostok 690041, Russia
| | - Ryosuke Nakanishi
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
| | - Shunsuke Sato
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
| | - Takuro Fukasawa
- Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
| | - Taisuke Sasaki
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Haruko Toyama
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
| | - Kota L Hiwatari
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
| | - Andrey V Zotov
- Institute of Automation and Control Processes, Vladivostok 690041, Russia
| | | | - Toru Hirahara
- Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
| | - Shuji Hasegawa
- Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
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34
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Nelson JN, Schreiber NJ, Georgescu AB, Goodge BH, Faeth BD, Parzyck CT, Zeledon C, Kourkoutis LF, Millis AJ, Georges A, Schlom DG, Shen KM. Interfacial charge transfer and persistent metallicity of ultrathin SrIrO 3/SrRuO 3 heterostructures. SCIENCE ADVANCES 2022; 8:eabj0481. [PMID: 35119924 PMCID: PMC8816341 DOI: 10.1126/sciadv.abj0481] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2021] [Accepted: 12/13/2021] [Indexed: 05/28/2023]
Abstract
Interface quantum materials have yielded a plethora of previously unknown phenomena, including unconventional superconductivity, topological phases, and possible Majorana fermions. Typically, such states are detected at the interface between two insulating constituents by electrical transport, but whether either material is conducting, transport techniques become insensitive to interfacial properties. To overcome these limitations, we use angle-resolved photoemission spectroscopy and molecular beam epitaxy to reveal the electronic structure, charge transfer, doping profile, and carrier effective masses in a layer-by-layer fashion for the interface between the Dirac nodal-line semimetal SrIrO3 and the correlated metallic Weyl ferromagnet SrRuO3. We find that electrons are transferred from the SrIrO3 to SrRuO3, with an estimated screening length of λ = 3.2 ± 0.1 Å. In addition, we find that metallicity is preserved even down to a single SrIrO3 layer, where the dimensionality-driven metal-insulator transition typically observed in SrIrO3 is avoided because of strong hybridization of the Ir and Ru t2g states.
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Affiliation(s)
- Jocienne N. Nelson
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Nathaniel J. Schreiber
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
| | - Alexandru B. Georgescu
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Berit H. Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Brendan D. Faeth
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Christopher T. Parzyck
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Cyrus Zeledon
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
| | - Lena F. Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Andrew J. Millis
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010, USA
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Antoine Georges
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010, USA
- Collège de France, 11 place Marcelin Berthelot, 75005 Paris, France
- CPHT, CNRS, Ecole Polytechnique, IP Paris, F-91128 Palaiseau, France
- DQMP, Universitè de Genéve, 24 quai Ernest Ansermet, CH-1211 Genéve, Suisse
| | - Darrell G. Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
| | - Kyle M. Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
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35
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Yao X, Wang C, Guo EJ, Wang X, Li X, Liao L, Zhou Y, Lin S, Jin Q, Ge C, He M, Bai X, Gao P, Yang G, Jin KJ. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO 3/BiFeO 3 Multilayers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6194-6202. [PMID: 35072446 DOI: 10.1021/acsami.1c21703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.
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Affiliation(s)
- Xiaokang Yao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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36
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Sohn B, Lee E, Park SY, Kyung W, Hwang J, Denlinger JD, Kim M, Kim D, Kim B, Ryu H, Huh S, Oh JS, Jung JK, Oh D, Kim Y, Han M, Noh TW, Yang BJ, Kim C. Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite thin films. NATURE MATERIALS 2021; 20:1643-1649. [PMID: 34608283 DOI: 10.1038/s41563-021-01101-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2019] [Accepted: 08/11/2021] [Indexed: 06/13/2023]
Abstract
Magnetism and spin-orbit coupling are two quintessential ingredients underlying topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by spin-orbit coupling, the nodal structures become a source of Berry curvature, leading to a large anomalous Hall effect. However, two-dimensional systems can possess stable nodal structures only when proper crystalline symmetry exists. Here we show that two-dimensional spin-polarized band structures of perovskite oxides generally support symmetry-protected nodal lines and points that govern both the sign and the magnitude of the anomalous Hall effect. To demonstrate this, we performed angle-resolved photoemission studies of ultrathin films of SrRuO3, a representative metallic ferromagnet with spin-orbit coupling. We show that the sign-changing anomalous Hall effect upon variation in the film thickness, magnetization and chemical potential can be well explained by theoretical models. Our work may facilitate new switchable devices based on ferromagnetic ultrathin films.
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Affiliation(s)
- Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Eunwoo Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
- Center for Theoretical Physics, Seoul National University, Seoul, Korea
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, Korea.
| | - Wonshik Kyung
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Minsoo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Bongju Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Hanyoung Ryu
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Soonsang Huh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Ji Seop Oh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Jong Keun Jung
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Dongjin Oh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Moonsup Han
- Department of Physics, University of Seoul, Seoul, Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Bohm-Jung Yang
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea.
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea.
- Center for Theoretical Physics, Seoul National University, Seoul, Korea.
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Korea.
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea.
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37
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Zhang H, Zhu XY, Xu Y, Gawryluk DJ, Xie W, Ju SL, Shi M, Shiroka T, Zhan QF, Pomjakushina E, Shang T. Giant magnetoresistance and topological Hall effect in the EuGa 4antiferromagnet. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:034005. [PMID: 34666329 DOI: 10.1088/1361-648x/ac3102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 10/19/2021] [Indexed: 06/13/2023]
Abstract
We report on systematic temperature- and magnetic field-dependent studies of the EuGa4binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space groupI4/mmm. The electronic properties of EuGa4single crystals, with an antiferromagnetic (AFM) transition atTN∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching∼7×104% at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. BelowTN, in the ∼4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4and EuAl4belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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Affiliation(s)
- H Zhang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - X Y Zhu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Y Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - D J Gawryluk
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - W Xie
- DESY, Notkestraβe 85, D-22607 Hamburg, Germany
| | - S L Ju
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Shi
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - T Shiroka
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
| | - Q F Zhan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | | | - T Shang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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38
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Zhang X, Ambhire SC, Lu Q, Niu W, Cook J, Jiang JS, Hong D, Alahmed L, He L, Zhang R, Xu Y, Zhang SSL, Li P, Bian G. Giant Topological Hall Effect in van der Waals Heterostructures of CrTe 2/Bi 2Te 3. ACS NANO 2021; 15:15710-15719. [PMID: 34460216 DOI: 10.1021/acsnano.1c05519] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μΩ·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.
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Affiliation(s)
- Xiaoqian Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Siddhesh C Ambhire
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Jidong Samuel Jiang
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Deshun Hong
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Laith Alahmed
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Liang He
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- York-Nanjing Joint Centre (YNJC) for spintronics and nano engineering, Department of Electronic Engineering, The University of York, York YO10 3DD, United Kingdom
| | - Steven S-L Zhang
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
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39
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Liu J, Hesjedal T. Magnetic Topological Insulator Heterostructures: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2102427. [PMID: 34665482 DOI: 10.1002/adma.202102427] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 06/05/2021] [Indexed: 06/13/2023]
Abstract
Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)2 Te3 films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.
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Affiliation(s)
- Jieyi Liu
- Clarendon Laboratory, Department of Physics University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Thorsten Hesjedal
- Clarendon Laboratory, Department of Physics University of Oxford, Parks Road, Oxford, OX1 3PU, UK
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40
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van Thiel TC, Brzezicki W, Autieri C, Hortensius JR, Afanasiev D, Gauquelin N, Jannis D, Janssen N, Groenendijk DJ, Fatermans J, Van Aert S, Verbeeck J, Cuoco M, Caviglia AD. Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces. PHYSICAL REVIEW LETTERS 2021; 127:127202. [PMID: 34597094 DOI: 10.1103/physrevlett.127.127202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Accepted: 07/21/2021] [Indexed: 06/13/2023]
Abstract
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion symmetry across the heterointerfaces. A notable example is the interface between polar and nonpolar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way for the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wave functions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO_{3}, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO_{3}, a polar wide-band-gap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO_{2}/SrO interface configuration, leading to excess charge being pinned near the LaAlO_{3}/SrRuO_{3} interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction drives a reorganization of the topological charges in the band structure, thereby modifying the momentum-space Berry curvature in SrRuO_{3}. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
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Affiliation(s)
- T C van Thiel
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - W Brzezicki
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
- Institute of Theoretical Physics, Jagiellonian University, ulica S. Łojasiewicza 11, PL-30348 Kraków, Poland
| | - C Autieri
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - J R Hortensius
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - D Afanasiev
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - N Gauquelin
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - D Jannis
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - N Janssen
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - D J Groenendijk
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
| | - J Fatermans
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
- Imec-Vision Lab, University of Antwerp, Universiteitsplein 1, 2610 Wilrijk, Belgium
| | - S Van Aert
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - J Verbeeck
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - M Cuoco
- SPIN-CNR, IT-84084 Fisciano (SA), Italy
- Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, IT-84084 Fisciano (SA), Italy
| | - A D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands
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41
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Magnetoelectric phase transition driven by interfacial-engineered Dzyaloshinskii-Moriya interaction. Nat Commun 2021; 12:5453. [PMID: 34526513 PMCID: PMC8443571 DOI: 10.1038/s41467-021-25759-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2021] [Accepted: 08/23/2021] [Indexed: 11/09/2022] Open
Abstract
Strongly correlated oxides with a broken symmetry could exhibit various phase transitions, such as superconductivity, magnetism and ferroelectricity. Construction of superlattices using these materials is effective to design crystal symmetries at atomic scale for emergent orderings and phases. Here, antiferromagnetic Ruddlesden-Popper Sr2IrO4 and perovskite paraelectric (ferroelectric) SrTiO3 (BaTiO3) are selected to epitaxially fabricate superlattices for symmetry engineering. An emergent magnetoelectric phase transition is achieved in Sr2IrO4/SrTiO3 superlattices with artificially designed ferroelectricity, where an observable interfacial Dzyaloshinskii-Moriya interaction driven by non-equivalent interface is considered as the microscopic origin. By further increasing the polarization namely interfacial Dzyaloshinskii-Moriya interaction via replacing SrTiO3 with BaTiO3, the transition temperature can be enhanced from 46 K to 203 K, accompanying a pronounced magnetoelectric coefficient of ~495 mV/cm·Oe. This interfacial engineering of Dzyaloshinskii-Moriya interaction provides a strategy to design quantum phases and orderings in correlated electron systems.
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42
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Datt G, Kotnana G, Maddu R, Vallin Ö, Joshi DC, Peddis D, Barucca G, Kamalakar MV, Sarkar T. Combined Bottom-Up and Top-Down Approach for Highly Ordered One-Dimensional Composite Nanostructures for Spin Insulatronics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37500-37509. [PMID: 34325507 PMCID: PMC8397244 DOI: 10.1021/acsami.1c09582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 07/19/2021] [Indexed: 06/13/2023]
Abstract
Engineering magnetic proximity effects-based devices requires developing efficient magnetic insulators. In particular, insulators, where magnetic phases show dramatic changes in texture on the nanometric level, could allow us to tune the proximity-induced exchange splitting at such distances. In this paper, we report the fabrication and characterization of highly ordered two-dimensional arrays of LaFeO3 (LFO)-CoFe2O4 (CFO) biphasic magnetic nanowires, grown on silicon substrates using a unique combination of bottom-up and top-down synthesis approaches. The regularity of the patterns was confirmed using atomic force microscopy and scanning electron microscopy techniques, whereas magnetic force microscopy images established the magnetic homogeneity of the patterned nanowires and absence of any magnetic debris between the wires. Transmission electron microscopy shows a close spatial correlation between the LFO and CFO phases, indicating strong grain-to-grain interfacial coupling, intrinsically different from the usual core-shell structures. Magnetic hysteresis loops reveal the ferrimagnetic nature of the composites up to room temperature and the presence of a strong magnetic coupling between the two phases, and electrical transport measurements demonstrate the strong insulating behavior of the LFO-CFO composite, which is found to be governed by Mott-variable range hopping conduction mechanisms. A shift in the Raman modes in the composite sample compared to those of pure CFO suggests the existence of strain-mediated elastic coupling between the two phases in the composite sample. Our work offers ordered composite nanowires with strong interfacial coupling between the two phases that can be directly integrated for developing multiphase spin insulatronic devices and emergent magnetic interfaces.
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Affiliation(s)
- Gopal Datt
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Ganesh Kotnana
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Ramu Maddu
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Örjan Vallin
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Deep Chandra Joshi
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Davide Peddis
- Dipartimento
di Chimica e Chimica Industriale, Università
di Genova, Via Dodecaneso
31, Genova I-16146, Italy
- Institute
of Structure of Matter, Italian National
Research Council (CNR), Monterotondo
Scalo, 00015 Rome, Italy
| | - Gianni Barucca
- Department
SIMAU, Università Politecnica delle
Marche, Via Brecce Bianche
12, Ancona 60131, Italy
| | - M. Venkata Kamalakar
- Department
of Physics and Astronomy, Uppsala University, Uppsala SE-751 20, Sweden
| | - Tapati Sarkar
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
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43
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Lu J, Si L, Zhang Q, Tian C, Liu X, Song C, Dong S, Wang J, Cheng S, Qu L, Zhang K, Shi Y, Huang H, Zhu T, Mi W, Zhong Z, Gu L, Held K, Wang L, Zhang J. Defect-Engineered Dzyaloshinskii-Moriya Interaction and Electric-Field-Switchable Topological Spin Texture in SrRuO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102525. [PMID: 34223676 DOI: 10.1002/adma.202102525] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2021] [Indexed: 06/13/2023]
Abstract
In situ electrical control of the Dzyaloshinskii-Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion-based device applications. An atomic design of defective interfaces in spin-orbit-coupled transition-metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO3 /SrTiO3 (001), a sharp interface is constructed between oxygen-deficient and stoichiometric SrRuO3 . This interfacial inversion-symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit-cell-thick SrRuO3 . This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect-engineered topological spin textures may offer an alternate perspective for future skyrmion-based memristor and synaptic devices.
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Affiliation(s)
- Jingdi Lu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Liang Si
- Institut für Festkörperphysik, TU Wien, Wiedner Hauptstraße 8-10, Vienna, 1040, Austria
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Chengfeng Tian
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Xin Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Chuangye Song
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Shouzhe Dong
- School of Materials Science and Engineering, and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Jie Wang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Sheng Cheng
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Lili Qu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Kexuan Zhang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Houbing Huang
- School of Materials Science and Engineering, and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin, 300354, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Karsten Held
- Institut für Festkörperphysik, TU Wien, Wiedner Hauptstraße 8-10, Vienna, 1040, Austria
| | - Lingfei Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
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44
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Bhattacharyya S, Akhgar G, Gebert M, Karel J, Edmonds MT, Fuhrer MS. Recent Progress in Proximity Coupling of Magnetism to Topological Insulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007795. [PMID: 34185344 DOI: 10.1002/adma.202007795] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 01/11/2021] [Indexed: 05/08/2023]
Abstract
Inducing long-range magnetic order in 3D topological insulators can gap the Dirac-like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.
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Affiliation(s)
- Semonti Bhattacharyya
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Golrokh Akhgar
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Matthew Gebert
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Julie Karel
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
| | - Mark T Edmonds
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
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45
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Absence of Hall effect due to Berry curvature in phase space. Sci Rep 2021; 11:12065. [PMID: 34103561 PMCID: PMC8187482 DOI: 10.1038/s41598-021-91436-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Accepted: 05/26/2021] [Indexed: 11/11/2022] Open
Abstract
Transverse current due to Berry curvature in phase space is formulated based on the Boltzmann equations with the semiclassical equations of motion for an electron wave packet. It is shown that the Hall effect due to the phase space Berry curvature is absent because the contributions from “anomalous velocity” and “effective Lorentz force” are completely cancelled out.
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46
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Yoo MW, Tornos J, Sander A, Lin LF, Mohanta N, Peralta A, Sanchez-Manzano D, Gallego F, Haskel D, Freeland JW, Keavney DJ, Choi Y, Strempfer J, Wang X, Cabero M, Vasili HB, Valvidares M, Sanchez-Santolino G, Gonzalez-Calbet JM, Rivera A, Leon C, Rosenkranz S, Bibes M, Barthelemy A, Anane A, Dagotto E, Okamoto S, te Velthuis SGE, Santamaria J, Villegas JE. Large intrinsic anomalous Hall effect in SrIrO 3 induced by magnetic proximity effect. Nat Commun 2021; 12:3283. [PMID: 34078889 PMCID: PMC8172877 DOI: 10.1038/s41467-021-23489-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Accepted: 04/25/2021] [Indexed: 02/04/2023] Open
Abstract
The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La0.7Sr0.3MnO3) and a semimetallic iridate (SrIrO3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.
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Affiliation(s)
- Myoung-Woo Yoo
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - J. Tornos
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - A. Sander
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Ling-Fang Lin
- grid.411461.70000 0001 2315 1184Department of Physics and Astronomy, University of Tennessee, Knoxville, TN USA ,grid.263826.b0000 0004 1761 0489School of Physics, Southeast University, Nanjing, China
| | - Narayan Mohanta
- grid.135519.a0000 0004 0446 2659Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN USA
| | - A. Peralta
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - D. Sanchez-Manzano
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - F. Gallego
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - D. Haskel
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - J. W. Freeland
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - D. J. Keavney
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - Y. Choi
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - J. Strempfer
- grid.187073.a0000 0001 1939 4845Advanced Photon Source Argonne National Laboratory, Lemont, IL USA
| | - X. Wang
- grid.253355.70000 0001 2192 5641Department of Physics, Bryn Mawr College, Bryn Mawr, PA USA
| | - M. Cabero
- grid.5515.40000000119578126IMDEA Nanoscience Campus Universidad Autonoma, Cantoblanco, Spain ,grid.4795.f0000 0001 2157 7667Centro Nacional de Microscopia Electronica, Universidad Complutense, Madrid, Spain
| | - Hari Babu Vasili
- grid.423639.9CELLS-ALBA Synchrotron Radiation Facility, Cerdanyola del Valles, Spain
| | - Manuel Valvidares
- grid.423639.9CELLS-ALBA Synchrotron Radiation Facility, Cerdanyola del Valles, Spain
| | - G. Sanchez-Santolino
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - J. M. Gonzalez-Calbet
- grid.4795.f0000 0001 2157 7667Centro Nacional de Microscopia Electronica, Universidad Complutense, Madrid, Spain ,grid.4795.f0000 0001 2157 7667Department Quimica Inorganica, Facultad de Quimica, Universidad Complutense, Madrid, Spain
| | - A. Rivera
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C. Leon
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - S. Rosenkranz
- grid.187073.a0000 0001 1939 4845Materials Science Division, Argonne National Laboratory, Lemont, IL USA
| | - M. Bibes
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - A. Barthelemy
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - A. Anane
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Elbio Dagotto
- grid.411461.70000 0001 2315 1184Department of Physics and Astronomy, University of Tennessee, Knoxville, TN USA ,grid.135519.a0000 0004 0446 2659Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN USA
| | - S. Okamoto
- grid.135519.a0000 0004 0446 2659Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN USA
| | - S. G. E. te Velthuis
- grid.187073.a0000 0001 1939 4845Materials Science Division, Argonne National Laboratory, Lemont, IL USA
| | - J. Santamaria
- grid.4795.f0000 0001 2157 7667GFMC, Dept. Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - Javier E. Villegas
- grid.460789.40000 0004 4910 6535Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
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47
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Raju M, Petrović AP, Yagil A, Denisov KS, Duong NK, Göbel B, Şaşıoğlu E, Auslaender OM, Mertig I, Rozhansky IV, Panagopoulos C. Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions. Nat Commun 2021; 12:2758. [PMID: 33980841 PMCID: PMC8115237 DOI: 10.1038/s41467-021-22976-6] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Accepted: 04/07/2021] [Indexed: 11/16/2022] Open
Abstract
The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable-temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect. Previous studies of skyrmions in thin film architectures have shown widely-varying magnitudes of the topological Hall effect. Here, Raju et al. show that this variation follows a power-law behaviour driven by chiral spin fluctuations at the phase transition between isolated and lattice skyrmions.
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Affiliation(s)
- M Raju
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore. .,Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, USA.
| | - A P Petrović
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - A Yagil
- Department of Physics, Technion, Haifa, Israel
| | | | - N K Duong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - B Göbel
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), Germany
| | - E Şaşıoğlu
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), Germany
| | - O M Auslaender
- Department of Physics, Technion, Haifa, Israel.,Neuroscience Institute and Tech4Health Institute, NYU Langone Health, New York, NY, USA
| | - I Mertig
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), Germany
| | | | - C Panagopoulos
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
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48
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Manipulating Berry curvature of SrRuO 3 thin films via epitaxial strain. Proc Natl Acad Sci U S A 2021; 118:2101946118. [PMID: 33911036 DOI: 10.1073/pnas.2101946118] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as the intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of the Ru magnetic moment in real space of a tensile-strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in noncoplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.
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49
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Lin S, Zhang Q, Sang X, Zhao J, Cheng S, Huon A, Jin Q, Chen S, Chen S, Cui W, Guo H, He M, Ge C, Wang C, Wang J, Fitzsimmons MR, Gu L, Zhu T, Jin K, Guo EJ. Dimensional Control of Octahedral Tilt in SrRuO 3 via Infinite-Layered Oxides. NANO LETTERS 2021; 21:3146-3154. [PMID: 33750141 DOI: 10.1021/acs.nanolett.1c00352] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Manipulation of octahedral distortion at atomic scale is an effective means to tune the ground states of functional oxides. Previous work demonstrates that strain and film thickness are variable parameters to modify the octahedral parameters. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetism in SrRuO3 (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO) layers. The infinite-layered CuO2 exhibits a structural transformation from "planar-type" to "chain-type" with reduced film thickness. Two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and orbital hybridization strength, leading to a significant change in the magnetoresistance and anomalous Hall resistivity. These findings could launch investigations into adaptive control of functionalities in quantum oxide heterostructures using oxygen coordination.
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Affiliation(s)
- Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiahan Sang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing and Nanostructure Research Center, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
| | - Jiali Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Cheng
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Amanda Huon
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shuang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Wenjun Cui
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing and Nanostructure Research Center, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
| | - Haizhong Guo
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jiaou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Michael R Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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50
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Real-space observation of ferroelectrically induced magnetic spin crystal in SrRuO 3. Nat Commun 2021; 12:2007. [PMID: 33790268 PMCID: PMC8012650 DOI: 10.1038/s41467-021-22165-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Accepted: 03/04/2021] [Indexed: 11/25/2022] Open
Abstract
Unusual features in the Hall Resistivity of thin film systems are frequently associated with whirling spin textures such as Skyrmions. A host of recent investigations of Hall Hysteresis loops in SrRuO3 heterostructures have provided conflicting evidence for different causes for such features. We have constructed an SrRuO3-PbTiO3 (Ferromagnetic – Ferroelectric) bilayer that exhibits features in the Hall Hysteresis previously attributed to a Topological Hall Effect, and Skyrmions. Here we show field dependent Magnetic Force Microscopy measurements throughout the key fields where the ‘THE’ presents, revealing the emergence to two periodic, chiral spin textures. The zero-field cycloidal phase, which then transforms into a ‘double-q’ incommensurate spin crystal appears over the appearance of the ‘Topological-like’ Hall effect region, and develop into a ferromagnetic switching regime as the sample reaches saturation, and the ‘Topological-like’ response diminishes. Scanning Tunnelling Electron Microscopy and Density Functional Theory is used to observe and analyse surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system. There is an ongoing debate in the origin of unusual bumps in the resistive Hall measurements in SrRuO3 systems. Here, the authors analyze surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system, revealing a magnetic spin crystal emergent across the unusual bumps.
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