Intrinsic-strain-induced ferroelectric order and ultrafine nanodomains in SrTiO3

Nano ferroelectrics holds the potential application promise in information storage, electro-mechanical transformation, and novel catalysts but encounters a huge challenge of size limitation and manufacture complexity on the creation of long-range ferroelectric ordering. Herein, as an incipient ferroelectric, nanosized SrTiO3 was indued with polarized ordering at room temperature from the nonpolar cubic structure, driven by the intrinsic three-dimensional (3D) tensile strain. The ferroelectric behavior can be confirmed by piezoelectric force microscopy and the ferroelectric TO1 soft mode was verified with the temperature stability to 500 K. Its structural origin comes from the off-center shift of Ti atom to oxygen octahedron and forms the ultrafine head-to-tail connected 90° nanodomains about 2 to 3 nm, resulting in an overall spontaneous polarization toward the short edges of nanoparticles. According to the density functional theory calculations and phase-field simulations, the 3D strain-related dipole displacement transformed from [001] to [111] and segmentation effect on the ferroelectric domain were further proved. The topological ferroelectric order induced by intrinsic 3D tensile strain shows a unique approach to get over the nanosized limitation in nanodevices and construct the strong strain-polarization coupling, paving the way for the design of high-performance and free-assembled ferroelectric devices.

Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO3. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena-a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO3. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

Local-orbital ptychography for ultrahigh-resolution imaging

Technical advances paired with developments in methodology have enabled electron microscopy to reach atomic resolution. Further improving the information limit in microscopic imaging requires further improvements in methodology. Here we report a ptychographic method that describes the object as the sum of discrete atomic-orbital-like functions (for example, Gaussian functions) and the probe in terms of aberration functions. Using this method, we realize an improved information limit of microscopic imaging, reaching down to 14 pm. High-quality probes and objects contribute to superior signal-to-noise ratios at low electron doses, allowing for relaxation of the sample thickness restriction to 50 nm for dense materials. Additionally, our method has the capability to decompose the total phase into element components, revealing that the information limit is element dependent. With enhanced spatial resolution, signal-to-noise ratio and thickness threshold compared with conventional ptychography methods, our local-orbital ptychography may find applications in atomic-resolution imaging of metals, ceramics, electronic devices or beam-sensitive material.

Large Polarization Near 50 μC/cm2 in a Single Unit Cell Layer SrTiO3

The generally nonpolar SrTiO3 has attracted more attention recently because of its possibly induced novel polar states and related paraelectric-ferroelectric phase transitions. By using controlled pulsed laser deposition, high-quality, ultrathin, and strained SrTiO3 layers were obtained. Here, transmission electron microscopy and theoretical simulations have unveiled highly polar states in SrTiO3 films even down to one unit cell at room temperature, which were stabilized in the PbTiO3/SrTiO3/PbTiO3 sandwich structures by in-plane tensile strain and interfacial coupling, as evidenced by large tetragonality (∼1.05), notable polar ion displacement (0.019 nm), and thus ultrahigh spontaneous polarization (up to ∼50 μC/cm2). These values are nearly comparable to those of the strong ferroelectrics as the PbZrxTi1-xO3 family. Our findings provide an effective and practical approach for integrating large strain states into oxide films and inducing polarization in nonpolar materials, which may broaden the functionality of nonpolar oxides and pave the way for the discovery of new electronic materials.

Biodegradable ferroelectric molecular crystal with large piezoelectric response

Transient implantable piezoelectric materials are desirable for biosensing, drug delivery, tissue regeneration, and antimicrobial and tumor therapy. For use in the human body, they must show flexibility, biocompatibility, and biodegradability. These requirements are challenging for conventional inorganic piezoelectric oxides and piezoelectric polymers. We discovered high piezoelectricity in a molecular crystal HOCH2(CF2)3CH2OH [2,2,3,3,4,4-hexafluoropentane-1,5-diol (HFPD)] with a large piezoelectric coefficient d33 of ~138 picocoulombs per newton and piezoelectric voltage constant g33 of ~2450 × 10-3 volt-meters per newton under no poling conditions, which also exhibits good biocompatibility toward biological cells and desirable biodegradation and biosafety in physiological environments. HFPD can be composite with polyvinyl alcohol to form flexible piezoelectric films with a d33 of 34.3 picocoulombs per newton. Our material demonstrates the ability for molecular crystals to have attractive piezoelectric properties and should be of interest for applications in transient implantable electromechanical devices.

Supramolecular Organic Ferroelectric Materials from Donor-Acceptor Systems

Organic ferroelectric (FE) materials, though known for more than a century, are yet to reach close to the benchmark of inorganic or hybrid materials in terms of the magnitude of polarization. Amongst the different classes of organic systems, donor (D)-acceptor (A) charge-transfer (CT) complexes are recognized as promising for ferroelectricity owing to their neutral-to-ionic phase transition at low temperature. This review presents an overview of different supramolecular D-A systems that have been explored for FE phase transitions. The discussion begins with a general introduction of ferroelectricity and its different associated parameters. Then it moves on to show early examples of CT cocrystals that have shown FE properties at sub-ambient temperature. Subsequently, recent developments in the field of room temperature (RT) ferroelectricity, exhibited by H-bond-stabilized lock-arm supramolecular-ordering (LASO) in D-A co-crystals or other FE CT-crystals devoid of neutral-ionic phase transition are discussed. Then the discussion moves on to emerging reports on other D-A soft materials such as gel and foldable polymers; finally it shows very recent developments in ferroelectricity in supramolecular assemblies of single-component dipolar or ambipolar π-systems, exhibiting intra-molecular charge transfer. The effects of structural nuances such as H-bonding, balanced charge transfer and chirality on the observed ferroelectricity is described with the available examples. Finally, piezoelectricity in recently reported ambipolar ADA-type systems are discussed to highlight the future potential of these soft materials in micropower energy harvesting.

Ultrahigh-Efficiency Superior Energy Storage in Lead-Free Films with a Simple Composition

Dielectric capacitors are highly desired in modern electronic devices and power systems to store and recycle electric energy. However, achieving simultaneous high energy density and efficiency remains a challenge. Here, guided by theoretical and phase-field simulations, we are able to achieve a superior comprehensive property of ultrahigh efficiency of 90-94% and high energy density of 85-90 J cm-3 remarkably in strontium titanate (SrTiO3), a linear dielectric of a simple chemical composition, by manipulating local symmetry breaking through introducing Ti/O defects. Atomic-scale characterizations confirm that these Ti/O defects lead to local symmetry breaking and local lattice strains, thus leading to the formation of the isolated ultrafine polar nanoclusters with varying sizes from 2 to 8 nm. These nanoclusters account for both considerable dielectric polarization and negligible polarization hysteresis. The present study opens a new realm of designing high-performance dielectric capacitors utilizing a large family of readily available linear dielectrics with very simple chemistry.

Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field. Here we report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which can maintain tunnelling electroresistance of 7 × 105 with the samarium-substituted bismuth oxide film down to one nanometer, three orders of magnitude higher than previous reports with such thickness, owing to efficient barrier modulation by the large ferroelectric polarization. These ferroelectric tunnel junctions demonstrate up to 32 resistance states without any write-verify technique, high endurance (over 5 × 109), high linearity of conductance modulation, and long retention time (10 years). Furthermore, tunnelling electroresistance over 109 is achieved in ferroelectric tunnel junctions with 4.6-nanometer samarium-substituted bismuth oxide layer, which is higher than commercial flash memories. The results show high potential towards multi-level and reliable non-volatile memories.

Photoinduced Negative Differential Resistivity and Gunn Oscillations in SrTiO3

SrTiO3 , a perovskite oxide, holds significant potential for application in the field of oxide electronics. Notably, its photoelectric activity in the low temperature regime, which overlaps with the quantum paraelectric state, exhibits remarkable characteristics. In this study, it is demonstrated that when photo-excited with above band gap energy photons, SrTiO3 exhibits non-linear transport of photocarriers and voltage-controlled negative resistance, resulting from an intervalley transfer of photo-induced electrons. As a consequence of the negative resistance, the photocurrent becomes unstable and spontaneously gives rise to low frequency Gunn-like oscillations.

Polarization Alignment in Polycrystalline BiFeO3 Photoelectrodes for Tunable Band Bending

Polarization in a semiconductor can modulate the band bending via the depolarization electric field (EdP), subsequently tuning the charge separation and transfer (CST) process in photoelectrodes. However, the random orientation of dipole moments in many polycrystalline semiconductor photoelectrodes leads to negligible polarization effect. How to effectively align the dipole moments in polycrystalline photoelectrodes into the same direction to maximize the polarization is still to be developed. Herein, we report that the dipole moments in a ferroelectric BiFeO3 photoelectrode can be controlled under external poling, resulting in a tunable CST efficiency. A negative bias of -40 voltage (V) poling to the photoelectrode leads to an over 110% increase of the CST efficiency, while poling at +40 V, the CST efficiency is reduced to only 41% of the original value. Furthermore, a nearly linear relationship between the external poling voltage and surface potential is discovered. The findings here provide an effective method in tuning the band bending and charge transfer of the emerging ferroelectricity driven solar energy conversion.

Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials. The lattice transparency as the fundamental principle of remote epitaxy has been studied and challenged by recent observations defying the concept. Understanding remote epitaxy requires an integrated approach of theoretical modeling and experimental validation at multi-scales because the phenomenon includes remote interactions of atoms across an atomically thin material and a few van der Waals gaps. The roles of atomically thin 2D material for the nucleation and growth of a 3D material have not been integrated into a framework of remote epitaxy research. Here, we summarize studies of remote epitaxy mechanisms with a comparison to other epitaxy techniques. In the end, we suggest the crucial topics of remote epitaxy research for basic science and applications.

Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing

In-memory computing is a highly efficient approach for breaking the bottleneck of von Neumann architectures, i.e., reducing redundant latency and energy consumption during the data transfer between the physically separated memory and processing units. Herein we have designed a in-memory computing device, a van der Waals ferroelectric semiconductor (InSe) based metal-oxide-ferroelectric semiconductor field-effect transistor (MOfeS-FET). This MOfeS-FET integrates memory and logic functions in the same material, in which the out-of-plane (OOP) ferroelectric polarization in InSe is used for data storage and the semiconducting property is used for the logic computation. The MOfeS-FET shows a long retention time with high on/off ratios (>10⁶), high program/erase (P/E) ratios (10³), and stable cyclic endurance. Moreover, inverter, programmable NAND, and NOR Boolean logic operations with nonvolatile storage of the results have all been demonstrated using our approach. These findings highlight the potential of van der Waals ferroelectric semiconductor-based MOfeS-FETs in the in-memory computing and their potential of achieving size scaling beyond Moore's law.

Ferroelectricity in layered bismuth oxide down to 1 nanometer

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

Ferroelectric Materials and Their Applications in Activation of Small Molecules

The demand for renewable and environmentally friendly energy sources has attracted extensive research on high-performance catalysts. Ferroelectrics, a class of materials with switchable polarization, are unique and promising catalyst candidates due to the significant effects of polarization on surface chemistry and physics. The band bending at the ferroelectric/semiconductor interface induced by the polarization flip promotes charge separation and transfer, thereby enhancing the photocatalytic performance. More importantly, the reactants can be selectively adsorbed on the surface of ferroelectric materials depending on the polarization direction, which can effectively lift the basic limitations as imposed by Sabatier's principle on catalytic activity. This Review summarizes the latest developments of ferroelectric materials and introduces ferroelectric-related catalytic applications. The possible research directions of 2D ferroelectric materials in chemical catalysis are discussed at the end. The Review is expected to inspire extensive research interests from physical, chemical, and materials science communities.

Configurable Crack Wall Conduction in a Complex Oxide

Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO₃ thin films grown on DyScO₃ substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 10⁴. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n⁺-n or n-n⁺ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects in crack walls to be 1.4 × 10^-16 cm²/s, which is consistent with oxygen vacancy kinetics.

Room-Temperature Ferroelectricity of Paraelectric Oxides Tailored by Nano-Engineering

Inducing clear ferroelectricity in the quantum paraelectric SrTiO₃ is important for triggering methods to discover hidden phases in condensed matter physics. Several methods such as isotope substitution and freestanding membranes could introduce ferroelectricity in SrTiO₃ toward nonvolatile memory applications. However, the stable transformation from quantum paraelectric SrTiO₃ to ferroelectricity SrTiO₃ at room temperature still remains challenging. Here, we used multiple nano-engineering in (SrTiO₃)_0.65/(CeO₂)_0.35 films to achieve an emergent room-temperature ferroelectricity. It is shown that the CeO₂ nanocolumns impose large out-of-plane strains and induce Sr/O deficiency in the SrTiO₃ matrix to form a clear tetragonal structure, which leads to an apparent room-temperature ferroelectric polarization up to 2.5 μC/cm². In collaboration with density functional theory calculations, it is proposed that the compressive strains combined with elemental deficiency give rise to local redistribution of charge density and orbital order, which induce emergent tetragonality of the strained SrTiO₃. Our work thus paves a pathway for architecting functional systems in perovskite oxides using a multiple nano-design.

Diverse Defects in Alkali Niobate Thin Films: Understanding at Atomic Scales and Their Implications on Properties

Defects in ferroelectric materials have many implications on the material properties which, in most cases, are detrimental. However, engineering these defects can also create opportunities for property enhancement as well as for tailoring novel functionalities. To purposely manipulate these defects, a thorough knowledge of their spatial atomic arrangement, as well as elastic and electrostatic interactions with the surrounding lattice, is highly crucial. In this work, analytical scanning transmission electron microscopy (STEM) is used to reveal a diverse range of multidimensional crystalline defects (point, line, planar, and secondary phase) in (K,Na)NbO₃ (KNN) ferroelectric thin films. The atomic-scale analyses of the defect-lattice interactions suggest strong elastic and electrostatic couplings which vary among the individual defects and correspondingly affect the electric polarization. In particular, the observed polarization orientations are correlated with lattice relaxations as well as strain gradients and can strongly impact the properties of the ferroelectric films. The knowledge and understanding obtained in this study open a new avenue for the improvement of properties as well as the discovery of defect-based functionalities in alkali niobate thin films.

Energy Storage Properties of Sol-Gel-Processed SrTiO3 Films

Dielectric films with a high energy storage density and a large breakdown strength are promising material candidates for pulsed power electrical and electronic applications. Perovskite-type dielectric SrTiO₃ (STO) has demonstrated interesting properties desirable for capacitive energy storage, including a high dielectric constant, a wide bandgap and a size-induced paraelectric-to-ferroelectric transition. To pave a way toward large-scale production, STO film capacitors were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by the sol-gel method in this paper, and their electrical properties including the energy storage performance were studied as a function of the annealing temperature in the postgrowth rapid thermal annealing (RTA) process. The appearance of a ferroelectric phase at a high annealing temperature of 750 °C was revealed by X-ray diffraction and electrical characterizations (ferroelectric P-E loop). However, this high dielectric constant phase came at the cost of a low breakdown strength and a large hysteresis loss, which are not desirable for the energy storage application. On the other hand, when the RTA process was performed at a low temperature of 550 °C, a poorly crystallized perovskite phase together with a substantial amount of impurity phases appeared, resulting in a low breakdown strength as well as a very low dielectric constant. It is revealed that the best energy storage performance, which corresponds to a large breakdown strength and a medium dielectric constant, is achieved in STO films annealed at 650 °C, which showed a large energy density of 55 J/cm³ and an outstanding energy efficiency of 94.7% (@ 6.5 MV/cm). These findings lay out the foundation for processing high-quality STO film capacitors via the manufacturing-friendly sol-gel method.

Two-Dimensional Intercalating Multiferroics with Strong Magnetoelectric Coupling

Intrinsic two-dimensional (2D) multiferroics that couple ferromagnetism and ferroelectricity are rare. Here, we present an approach to achieve 2D multiferroics using powerful intercalation technology. In this approach, metal atoms such as Cu or Ag atoms are intercalated in bilayer CrI₃ to form Cu(CrI₃)₄ or Ag(CrI₃)₄. The intercalant leads to the inversion symmetry breaking and produces a large out-of-plane electric polarization with a low transition barrier and a small reversal electric field, exhibiting excellent 2D ferroelectric properties. In addition, due to charge transfer between the intercalated atoms and bilayer CrI₃, the interlayer coupling transits from antiferromagnetic to ferromagnetic, and the intralayer ferromagnetic coupling is also enhanced. Furthermore, the built-in electric polarization causes a distinct surface magnetization difference, generating a strong magnetoelectric coupling with a coefficient larger than that of Fe, Co, and Ni thin films. Our work paves a practical path for 2D multiferroics, which may have crucial applications in spintronics.

Room-temperature valence transition in a strain-tuned perovskite oxide

Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr_1-xCa_xCoO₃). Here, we show that in thin films of the complex perovskite (Pr_1-yY_y)_1-xCa_xCoO_3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.

Biferroelectricity of a homochiral organic molecule in both solid crystal and liquid crystal phases

Ferroelectricity, existing in either solid crystals or liquid crystals, gained widespread attention from science and industry for over a century. However, ferroelectricity has never been observed in both solid and liquid crystal phases of a material simultaneously. Inorganic ferroelectrics that dominate the market do not have liquid crystal phases because of their completely rigid structure caused by intrinsic chemical bonds. We report a ferroelectric homochiral cholesterol derivative, β-sitosteryl 4-iodocinnamate, where both solid and liquid crystal phases can exhibit the behavior of polarization switching as determined by polarization–voltage hysteresis loops and piezoresponse force microscopy measurements. The unique long molecular chain, sterol structure, and homochirality of β-sitosteryl 4-iodocinnamate molecules enable the formation of polar crystal structures with point group 2 in solid crystal phases, and promote the layered and helical structure in the liquid crystal phase with vertical polarization. Our findings demonstrate a compound that can show the biferroelectricity in both solid and liquid crystal phases, which would inspire further exploration of the interplay between solid and liquid crystal ferroelectric phases.

Ferroelectricity normally exists in either solid crystals or liquid crystals. Here, the authors report a homochiral organic compound which shows ferroelectricity in both solid crystal and liquid crystal phases.

Colossal Room-Temperature Ferroelectric Polarizations in SrTiO3/SrRuO3 Superlattices Induced by Oxygen Vacancies

Artificial superlattices have demonstrated many unique phenomena not found in bulk materials. For this investigation, SrTiO₃/SrRuO₃ paraelectric/metallic superlattices with various stacking periods were synthesized via pulsed laser deposition. A robust room-temperature ferroelectric polarization (∼46 μC/cm²) was found in the superlattices with 2 unit cell (u.c.) thick SrRuO₃ layers, despite the fact that neither SrTiO₃ nor SrRuO₃ is inherently ferroelectric. Results obtained from atomically resolved elemental mapping and X-ray photoelectron spectroscopy verified that oxygen vacancies accumulated at the SrTiO₃/SrRuO₃ interfaces, causing lattice distortions and increased tetragonality (c/a). The observed ferroelectric responses can be mainly attributed to the broken spatial inversion symmetry induced by the ordered distribution of oxygen vacancies at the SrTiO₃/SrRuO₃ interfaces, coupled with the triggering of external electric field. The resulting polarization mechanism induced by oxygen vacancies suggests viable ways for improving the electrical properties of ferroelectric materials, with the goal of expanding the functionality of a range of electronic devices.

Flexoelectricity-Driven Mechanical Switching of Polarization in Metastable Ferroelectrics

Flexoelectricity-based mechanical switching of ferroelectric polarization has recently emerged as a fascinating alternative to conventional polarization switching using electric fields. Here, we demonstrate hyperefficient mechanical switching of polarization exploiting metastable ferroelectricity that inherently holds a unique mechanical response. We theoretically predict that mechanical forces markedly reduce the coercivity of metastable ferroelectricity, thus greatly bolstering flexoelectricity-driven mechanical polarization switching. As predicted, we experimentally confirm the mechanical polarization switching via an unusually low mechanical force (100 nN) in metastable ferroelectric CaTiO_{3}. Furthermore, the use of low mechanical forces narrows the width of mechanically writable nanodomains to sub-10 nm, suggesting an ultrahigh data storage density of ≥1  Tbit cm^{-2}. This Letter sheds light on the mechanical switching of ferroelectric polarization as a viable key element for next-generation efficient nanoelectronics and nanoelectromechanics.

Energy Interplay in Materials: Unlocking Next-Generation Synchronous Multisource Energy Conversion with Layered 2D Crystals

Layered 2D crystals have unique properties and rich chemical and electronic diversity, with over 6000 2D crystals known and, in principle, millions of different stacked hybrid 2D crystals accessible. This diversity provides unique combinations of properties that can profoundly affect the future of energy conversion and harvesting devices. Notably, this includes catalysts, photovoltaics, superconductors, solar-fuel generators, and piezoelectric devices that will receive broad commercial uptake in the near future. However, the unique properties of layered 2D crystals are not limited to individual applications and they can achieve exceptional performance in multiple energy conversion applications synchronously. This synchronous multisource energy conversion (SMEC) has yet to be fully realized but offers a real game-changer in how devices will be produced and utilized in the future. This perspective highlights the energy interplay in materials and its impact on energy conversion, how SMEC devices can be realized, particularly through layered 2D crystals, and provides a vision of the future of effective environmental energy harvesting devices with layered 2D crystals.

Ferroelectricity in a hydrogen-bonded alternating donor-acceptor supramolecular copolymer

This communication reports synergistic H-bonding and charge-transfer (CT) interaction-promoted alternating supramolecular copolymerization of amide-functionalized pyrene (Py) and naphthalene-diimide (NDI) building blocks and the emergence of ferroelectricity with saturation polarization ∼3.2 μC cm^-2, Curie temperature ∼304 K, and coercive field ∼8.5 kV cm^-1 at 100 Hz. The Py or NDI molecules on their own do not exhibit any ferroelectric hysteresis, indicating an essential role of both CT-interaction and H-bonding in ferroelectricity. Computational studies provide insight into the origin of the polarization and the importance of the NDI/Py ratio. This study, showing room temperature ferroelectricity in purely organic systems, is of high relevance for flexible electronics and sensors. It opens up new opportunities for soft FE-materials with ample scope for further structural optimization.

Double-Bilayer polar nanoregions and Mn antisites in (Ca, Sr)3Mn2O7

The layered perovskite Ca₃Mn₂O₇ (CMO) is a hybrid improper ferroelectric candidate proposed for room temperature multiferroicity, which also displays negative thermal expansion behavior due to a competition between coexisting polar and nonpolar phases. However, little is known about the atomic-scale structure of the polar/nonpolar phase coexistence or the underlying physics of its formation and transition. In this work, we report the direct observation of double bilayer polar nanoregions (db-PNRs) in Ca_2.9Sr_0.1Mn₂O₇ using aberration-corrected scanning transmission electron microscopy (S/TEM). In-situ TEM heating experiments show that the db-PNRs can exist up to 650 °C. Electron energy loss spectroscopy (EELS) studies coupled with first-principles calculations demonstrate that the stabilization mechanism of the db-PNRs is directly related to an Mn oxidation state change (from 4+ to 2+), which is linked to the presence of Mn antisite defects. These findings open the door to manipulating phase coexistence and achieving exotic properties in hybrid improper ferroelectric.

The competition between the polar and nonpolar phase in the prototypical hybrid improper ferroelectric crystal Ca₃Mn₂O₇ leads to exotic properties. Here, the authors directly imaged the crystal at atomic resolution to understand its nanostructure and discovered the double bilayer polar nanoregion.

Strong Interfacial Charge Trapping in Ultrathin SrRuO3 on SrTiO3 Probed by Noise Spectroscopy

SrRuO₃ (SRO) has emerged as a promising quantum material due to its exotic electron correlations and topological properties. In epitaxial SRO films, electron scattering against lattice phonons or defects has been considered as only a predominant mechanism accounting for electronic properties. Although the charge trapping by polar defects can also strongly influence the electronic behavior, it has often been neglected. Herein, we report strong interfacial charge trapping in ultrathin SRO films on SrTiO₃ (STO) substrates probed by noise spectroscopy. We find that oxygen vacancies in the STO cause stochastic interfacial charge trapping, resulting in high electrical noise. Spectral analyses of the photoinduced noise prove that the oxygen vacancies buried deep in the STO can effectively contribute to the charge trapping process. These results unambiguously reveal that electron transport in ultrathin SRO films is dominated by the carrier number fluctuation that correlates with interfacial charge trapping.

Emergent ferroelectricity in subnanometer binary oxide films on silicon

The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO2) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO2, conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials.

A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory

Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In₂ Se₃ , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 10⁴ at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In₂ Se₃ for reliable service in high temperature either from self-heating or harsh environments.

High-density switchable skyrmion-like polar nanodomains integrated on silicon

Topological domains in ferroelectrics^1-5 have received much attention recently owing to their novel functionalities and potential applications^6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.

Presence of Delocalized Ti 3d Electrons in Ultrathin Single-Crystal SrTiO3

Strontium titanate (STO), with a wide spectrum of emergent properties such as ferroelectricity and superconductivity, has received significant attention in the community of strongly correlated materials. In the strain-free STO film grown on the SrRuO₃ buffer layer, the existing polar nanoregions can facilitate room-temperature ferroelectricity when the STO film thickness approaches 10 nm. Here we show that around this thickness scale, the freestanding STO films without the influence of a substrate show the tetragonal structure at room temperature, contrasting with the cubic structure seen in bulk form. The spectroscopic measurements reveal the modified Ti-O orbital hybridization that causes the Ti ion to deviate from its nominal 4+ valency (3d⁰ configuration) with excess delocalized 3d electrons. Additionally, the Ti ion in TiO₆ octahedron exhibits an off-center displacement. The inherent symmetry lowering in ultrathin freestanding films offers an alternative way to achieve tunable electronic structures that are of paramount importance for future technological applications.

Atomic Visualization and Switching of Ferroelectric Order in β-In2 Se3 Films at the Single Layer Limit

2D ferroelectrics have received wide interest due to the remarkable quantum states of emerging physics at reduced dimensionality, associated with their exotic properties in high-performance and nonvolatile functional devices. Here, by combing molecular beam epitaxy synthesis and scanning tunneling microscopy characterization, two metastable phases of layered In₂ Se₃ films: β'- and β*-In₂ Se₃ are reported, which develop different types of in-plane spontaneous polarizations, thus resulting in different striped morphologies. The anti-ferroelectric order in β'-In₂ Se₃ and ferroelectric order of β*-In₂ Se₃ are identified, respectively, down to the 2D limit by comprehensive investigations of structural and spectroscopic signatures, including the lattice distortion, the spatial profile of images, the formation of domain structure, and the electronic band-bending by polarization charges at edges. The ferroelectric switching between those two phases are further controlled via applying an electric field generated from the scanning tunneling microscopy tip in a reversible manner. The intriguing tunability between the (anti-)ferroelectric orders in the 2D limit provides a promising platform for studying the interplay between electronic structure and ferroelectricity in van der Waals materials, and promotes potential development of miniaturized transistors and memory devices based on electric polarizations.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO₃-based and NaNbO₃-based systems. In the context of the ultrahigh energy storage density of SrTiO₃-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La_1−xSr_x)MnO₃ electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.

Developing sustainable, high-performance perovskites in photocatalysis: design strategies and applications

Solar energy is attractive because it is free, renewable, abundant and sustainable. Photocatalysis is one of the feasible routes to utilize solar energy for the degradation of pollutants and the production of fuel. Perovskites and their derivatives have received substantial attention in both photocatalytic wastewater treatment and energy production because of their highly tailorable structural and physicochemical properties. This review illustrates the basic principles of photocatalytic reactions and the application of these principles to the design of robust and sustainable perovskite photocatalysts. It details the structures of the perovskites and the physics and chemistry behind photocatalytic reactions and describes the advantages and limitations of popular strategies for the design of photoactive perovskites. This is followed by examples of how these strategies are applied to enhance the photocatalytic efficiency of oxide, halide and oxyhalide perovskites, with a focus on materials with potential for practical application, that is, not containing scarce or toxic elements. It is expected that this overview of the development of photocatalysts and deeper understanding of photocatalytic principles will accelerate the exploitation of efficient perovskite photocatalysts and bring about effective solutions to the energy and environmental crisis.

Optical Control of Polarization Switching in a Single-Component Organic Ferroelectric Crystal

The optical control of polarization switching is attracting tremendous interest because photoirradiation stands out as a nondestructive, noncontact, and remote-control means beyond an electric or strain field. The current research mainly uses various photoexcited electronic effects to achieve the photocontrol polarization, such as a light-driven flexoelectric effect and a photovoltaic effect. However, since photochromism was discovered in 1867, the structural phase transition caused by photoisomerization has never been associated with ferroelectricity. Here, we successfully synthesized an organic photochromic ferroelectric with polar space group Pna2₁, 3,4,5-trifluoro-N-(3,5-di-tert-butylsalicylidene)aniline, whose color can change between yellow and orange via laser illumination. Its dielectric permittivity and spontaneous polarization can be switched reversibly with a photoinduced phase transition triggered by structural photoisomerization between the enol form and the trans-keto form. To our knowledge, this is the first photoswitchable ferroelectric crystal to achieve polarization switching through a structural phase transition triggered by photoisomerization. This finding paves the way toward photocontrol of smart materials and biomechanical applications in the future.

Electronically reconfigurable complex oxide heterostructure freestanding membranes

In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. Conductive atomic force microscope lithography is shown to successfully create reversible patterns of nanoscale conducting regions, which survive to millikelvin temperatures. The ability to form reconfigurable conducting nanostructures on LAO/STO membranes opens opportunities to integrate a variety of nanoelectronics with silicon-based architectures and flexible, magnetic, or superconducting materials.

A review of ultra-thin ferroelectric films

Ultrathin ferroelectrics are of great technological interest for high-density electronics, particularly non-volatile memories and field-effect transistors. With the rapid development of micro-electronics technology, there is an urgent requirement for higher density electronic devices, which need ultra-thin ferroelectric materials films. However, as ferroelectric films have becomes thinner and thinner, electrical spontaneous polarization signals have been found in a few atomic layers or even monolayer structures. The mechanisms of detection and formation of these signals are not well understood and various controversial interpretations have emerged. In this review, we summarized the recent research progress in the ultra-thin film ferroelectric material, such as HfO₂, CuInP₂S₆, In₂Se₃, MoTe₂and BaTiO₃. Various key aspects of ferroelectric materials are discussed, including crystal structure, ferroelectric mechanism, characterization, fabrication methods, applications, and future outlooks. We hope this review will offer ideas for further improvement of ferroelectric properties of ultra-thin films and promotes practical applications.

Periodic Polarization Waves in a Strained, Highly Polar Ultrathin SrTiO3

SrTiO₃ is generally paraelectric with centrosymmetric structure exhibiting unique quantum fluctuation related ferroelectricity. Here we reveal highly polar and periodic polarization waves in SrTiO₃ at room temperature, which is stabilized by periodic tensile strains in a sandwiched PbTiO₃/SrTiO₃/PbTiO₃ structure. Scanning transmission electron microscopy reveals that periodic a/c domain structures in PbTiO₃ layers exert unique periodic tensile strains in the ultrathin SrTiO₃ layer and consequently make the highly polar and periodic states of SrTiO₃. The as-received polar SrTiO₃ layer features peak polar ion displacement of ∼0.01 nm and peak tetragonality of ∼1.07. These peak values are larger than previous results, which are comparable to that of bulk ferroelectric PbTiO₃. Our results suggest that it is possible to integrate large and periodic strain state in oxide films with exotic properties, which in turn could be useful in optical applications and information addressing when used as memory unit.

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO₃, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of Y_Fe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.

Strain-Engineered Nano-Ferroelectrics for High-Efficiency Piezocatalytic Overall Water Splitting

Developing nano-ferroelectric materials with excellent piezoelectric performance for piezocatalysts used in water splitting is highly desired but also challenging, especially with respect to reaching large piezo-potentials that fully align with required redox levels. Herein, heteroepitaxial strain in BaTiO₃ nanoparticles with a designed porous structure is successfully induced by engineering their surface reconstruction to dramatically enhance their piezoelectricity. The strain coherence can be maintained throughout the nanoparticle bulk, resulting in a significant increase of the BaTiO₃ tetragonality and thus its piezoelectricity. Benefiting from high piezoelectricity, the as-synthesized blue-colored BaTiO₃ nanoparticles possess a superb overall water-splitting activity, with H₂ production rates of 159 μmol g^-1  h^-1 , which is almost 130 times higher than that of the pristine BaTiO₃ nanoparticles. Thus, this work provides a generic approach for designing highly efficient piezoelectric nanomaterials by strain engineering that can be further extended to various other perovskite oxides, including SrTiO₃ , thereby enhancing their potential for piezoelectric catalysis.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Two-Dimensional Room-Temperature Giant Antiferrodistortive SrTiO_{3} at a Grain Boundary

The broken symmetry at structural defects such as grain boundaries (GBs) discontinues chemical bonds, leading to the emergence of new properties that are absent in the bulk owing to the couplings between the lattice and other parameters. Here, we create a two-dimensional antiferrodistortive (AFD) strontium titanate (SrTiO_{3}) phase at a Σ13(510)/[001] SrTiO_{3} tilt GB at room temperature. We find that such an anomalous room-temperature AFD phase with the thickness of approximate six unit cells is stabilized by the charge doping from oxygen vacancies. The localized AFD originated from the strong lattice-charge couplings at a SrTiO_{3} GB is expected to play important roles in the electrical and optical activity of GBs and can explain past experiments such as the transport properties of electroceramic SrTiO_{3}. Our study also provides new strategies to create low-dimensional anomalous elements for future nanoelectronics via grain boundary engineering.

Strong Room-Temperature Ferroelectricity in Strained SrTiO3 Homoepitaxial Film

Although the discovery of exceptional ferroelectricity in paraelectrics offers great opportunities to enrich the diversity of the ferroelectric family and promote the development of novel functionalities, transformation of paraelectric phases into ferroelectric phases remains challenging. Herein, a method is presented for driving paraelectrics into ferroelectric states via the introduction of M/O-deficient (M for metal) perovskite nanoregions. Using this method, strong ferroelectricity, equivalent to that of classic ferroelectrics, is achieved in a prototype paraelectric strontium titanate (SrTiO₃ ) homoepitaxial film embedded with Ti/O-deficient perovskite nanoregions. It is shown that these unique nanoregions impose large out-of-plane tensile strain and electron-doping effects on the matrix to form a tetragonal structure (tetragonality = 1.038), driving the off-center movements of Ti and Sr atoms. This leads to a significant room-temperature ferroelectric polarization (maximum polarization = 41.6 µC cm^-2 and spontaneous polarization = 25.2 µC cm^-2 at 1.60 MV cm^-1 ) with a high thermal stability (T_stable  ≈ 1098 K). The proposed approach can be applied to various paraelectrics for creating ferroelectricity and generating emergent physical properties, opening the door to a new realm of materials design.

Creating polar antivortex in PbTiO3/SrTiO3 superlattice

Nontrivial topological structures offer a rich playground in condensed matters and promise alternative device configurations for post-Moore electronics. While recently a number of polar topologies have been discovered in confined ferroelectric PbTiO3 within artificially engineered PbTiO3/SrTiO3 superlattices, little attention was paid to possible topological polar structures in SrTiO3. Here we successfully create previously unrealized polar antivortices within the SrTiO3 of PbTiO3/SrTiO3 superlattices, accomplished by carefully engineering their thicknesses guided by phase-field simulation. Field- and thermal-induced Kosterlitz-Thouless-like topological phase transitions have also been demonstrated, and it was discovered that the driving force for antivortex formation is electrostatic instead of elastic. This work completes an important missing link in polar topologies, expands the reaches of topological structures, and offers insight into searching and manipulating polar textures.

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Although only a few 2D materials have been predicted to possess ferroelectricity, 2D ferroelectrics are expected to play a dominant role in the upcoming nano era as important functional materials. The ferroelectric properties of 2D ferroelectrics are significantly different than those of traditional bulk ferroelectrics owing to their intrinsic size and surface effects. To date, 2D ferroelectrics have been reported to exhibit diverse properties ranging from bulk photovoltaic and piezoelectric/pyroelectric effects to the spontaneous valley and spin polarization. These properties are either dependent on ferroelectric polarization or coupled with it for easy electric control, thus making 2D ferroelectrics applicable to multifunctional nanodevices. At present, cumulative efforts are being made to explore 2D ferroelectrics in theories, experiments, and applications. Herein, such theories and methods are briefly introduced. Subsequently, intrinsic and extrinsic origins of 2D ferroelectricity are separately summarized. In addition, invented or laboratory-validated 2D ferroelectric-based applications are listed. Finally, the existing challenges and prospects of 2D ferroelectrics are discussed.

Voltage controlled Néel vector rotation in zero magnetic field

Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

Large family of two-dimensional ferroelectric metals discovered via machine learning

Ferroelectricity and metallicity are usually believed not to coexist because conducting electrons would screen out static internal electric fields. In 1965, Anderson and Blount proposed the concept of "ferroelectric metal", however, it is only until recently that very rare ferroelectric metals were reported. Here, by combining high-throughput ab initio calculations and data-driven machine learning method with new electronic orbital based descriptors, we systematically investigated a large family (2964) of two-dimensional (2D) bimetal phosphates, and discovered 60 stable ferroelectrics with out-of-plane polarization, including 16 ferroelectric metals and 44 ferroelectric semiconductors that contain seven multiferroics. The ferroelectricity origins from spontaneous symmetry breaking induced by the opposite displacements of bimetal atoms, and the full-d-orbital coinage metal elements cause larger displacements and polarization than other elements. For 2D ferroelectric metals, the odd electrons per unit cell without spin polarization may lead to a half-filled energy band around Fermi level and is responsible for the metallicity. It is revealed that the conducting electrons mainly move on a single-side surface of the 2D layer, while both the ionic and electric contributions to polarization come from the other side and are vertical to the above layer, thereby causing the coexistence of metallicity and ferroelectricity. Van der Waals heterostructures based on ferroelectric metals may enable the change of Schottky barrier height or the Schottky-Ohmic contact type and induce a dramatic change of their vertical transport properties. Our work greatly expands the family of 2D ferroelectric metals and will spur further exploration of 2D ferroelectric metals.