1
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Li Z, Bretscher H, Rao A. Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. NANOSCALE 2024; 16:9728-9741. [PMID: 38700268 DOI: 10.1039/d3nr06296a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.
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Affiliation(s)
- Zhaojun Li
- Solid State Physics, Department of Materials Science and Engineering, Uppsala University, 75103 Uppsala, Sweden.
| | - Hope Bretscher
- The Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE, Cambridge, UK
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2
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Chuang HJ, Stevens CE, Rosenberger MR, Lee SJ, McCreary KM, Hendrickson JR, Jonker BT. Enhancing Single Photon Emission Purity via Design of van der Waals Heterostructures. NANO LETTERS 2024; 24:5529-5535. [PMID: 38668677 DOI: 10.1021/acs.nanolett.4c00683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2024]
Abstract
Quantum emitters are essential components of quantum photonic circuitry envisioned beyond the current optoelectronic state-of-the-art. Two dimensional materials are attractive hosts for such emitters. However, the high single photon purity required is rarely realized due to the presence of spectrally degenerate classical light originating from defects. Here, we show that design of a van der Waals heterostructure effectively eliminates this spurious light, resulting in purities suitable for a variety of quantum technological applications. Single photon purity from emitters in monolayer WSe2 increases from 60% to 92% by incorporating this monolayer in a simple graphite/WSe2 heterostructure. Fast interlayer charge transfer quenches a broad photoluminescence background by preventing radiative recombination through long-lived defect bound exciton states. This approach is generally applicable to other 2D emitter materials, circumvents issues of material quality, and offers a path forward to achieve the ultrahigh single photon purities ultimately required for photon-based quantum technologies.
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Affiliation(s)
- Hsun-Jen Chuang
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Christopher E Stevens
- KBR Inc., Beavercreek, Ohio 45431, United States
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | | | - Sung-Joon Lee
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Berend T Jonker
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
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3
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Villegas CEP, Marinho E, Venezuela P, Rocha AR. Optical spectra and exciton radiative lifetimes in bulk transition metal dichalcogenides. Phys Chem Chem Phys 2024; 26:13251-13260. [PMID: 38634830 DOI: 10.1039/d3cp05949a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
The optical response of layered transition metal dichalcogenides (TMDCs) exhibits remarkable excitonic properties which are important from both fundamental and device application viewpoints. One of these phenomena is the observation of intralayer/interlayer excitons. While much effort has been done to characterize excitons in monolayer TMDCs and their heterostructures, a quite limited number of works have addressed the exciton spectra of their bulk counterparts. In this work, we employ ab initio many-body perturbation calculations to investigate the exciton dynamics and spectra of bulk 2H-MX2 (M = Mo, W, and X = S, Se). For molybdenum-based systems, we find the presence of interlayer excitons at energies higher than the first bright exciton (XA), with non-negligible strength intensity. Our results also show that interlayer excitons in tungsten-based systems are almost degenerate in energy with XA and possess very small oscillator strengths when compared with molybdenum-based systems. At room temperature, and considering the thermal exciton fine-structure population for the XA-exciton, we estimate effective radiative lifetimes in the range of ∼4-14 ns. For higher energy excitons we predict longer effective lifetimes of tens of nanoseconds.
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Affiliation(s)
- Cesar E P Villegas
- Departamento de Ciencias, Universidad Privada del Norte, Lima 15434, Peru.
| | - Enesio Marinho
- Departamento de Física e Química, Universidade Estadual Paulista (UNESP), Av. Brasil, 56, 15385-007 Ilha Solteira, Brazil.
| | - Pedro Venezuela
- Instituto de Física, Universidade Federal Fluminense (UFF), Av. Gal. Milton Tavares de Souza, s/n, 24210-346 Niterói, Rio de Janeiro, Brazil.
| | - Alexandre R Rocha
- Instituto de Física Teórica, Universidade Estadual Paulista (UNESP), R. Dr. Bento Teobaldo Ferraz, 271, São Paulo, 01140-070 São Paulo, Brazil.
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4
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Chen Y, Liu H, Yu G, Ma C, Xu Z, Zhang J, Zhang C, Chen M, Li D, Zheng W, Luo Z, Yang X, Li K, Yao C, Zhang D, Xu B, Yi J, Yi C, Li B, Zhang H, Zhang Z, Zhu X, Li S, Chen S, Jiang Y, Pan A. Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312425. [PMID: 38146671 DOI: 10.1002/adma.202312425] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 12/10/2023] [Indexed: 12/27/2023]
Abstract
2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.
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Affiliation(s)
- Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guoliang Yu
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Zheyuan Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jinding Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Mingxing Chen
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Weihao Zheng
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan, 410073, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Kaihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chen Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Bo Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Hongmei Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Zucheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Siyu Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
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5
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Li Z, Chen Z, Xiao L, Zhou X, Zhao C, Zhang Y. Extremely Enhanced Photoluminescence in MoS 2-Derived Quantum Sheets. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38470979 DOI: 10.1021/acsami.3c17934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Molybdenum disulfide (MoS2) quantum sheets (QSs) are attractive for applications due to their tunable energy band structures and optical and electronic properties. The photoluminescence quantum yield (PLQY) of MoS2 QSs achieved by mechanical and liquid exfoliation and chemical vapor deposition is low. Some studies have reported that chemical treatment and elemental doping can improve the PLQY of transition metal dichalcogenides (TMDs), but this is limited by complex instruments and reactions. In this study, a heat treatment method based on a polar solvent is reported to improve the PLQY and photoluminescence (PL) intensity of MoS2 QSs at room temperature. The absolute PLQY of treated MoS2 QSs is increased to 18.5%, and the PL intensity is increased by a factor of 64. This method is also effective for tungsten disulfide (WS2) QSs. The PL enhancement of QSs is attributed to oxidation of the edges. Such passivation/deformation of MoS2 QSs facilitates the radiative route rather than the nonradiative route, resulting in extreme enhancement of the PL. Our work could provide novel insights/routes toward the PL enhancement of TMD QSs.
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Affiliation(s)
- Zhangqiang Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhexue Chen
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liuyang Xiao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xuanping Zhou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ce Zhao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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6
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Cai CS, Lai WY, Liu PH, Chou TC, Liu RY, Lin CM, Gwo S, Hsu WT. Ultralow Auger-Assisted Interlayer Exciton Annihilation in WS 2/WSe 2 Moiré Heterobilayers. NANO LETTERS 2024; 24:2773-2781. [PMID: 38285707 PMCID: PMC10921466 DOI: 10.1021/acs.nanolett.3c04688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 01/22/2024] [Accepted: 01/23/2024] [Indexed: 01/31/2024]
Abstract
Transition metal dichalcogenide (TMD) heterobilayers have emerged as a promising platform for exploring solid-state quantum simulators and many-body quantum phenomena. Their type II band alignment, combined with the moiré superlattice, inevitably leads to nontrivial exciton interactions and dynamics. Here, we unveil the distinct Auger annihilation processes for delocalized interlayer excitons in WS2/WSe2 moiré heterobilayers. By fitting the characteristic efficiency droop and bimolecular recombination rate, we quantitatively determine an ultralow Auger coefficient of 1.3 × 10-5 cm2 s-1, which is >100-fold smaller than that of excitons in TMD monolayers. In addition, we reveal selective exciton upconversion into the WSe2 layer, which highlights the significance of intralayer electron Coulomb interactions in dictating the microscopic scattering pathways. The distinct Auger processes arising from spatial electron-hole separation have important implications for TMD heterobilayers while endowing interlayer excitons and their strongly correlated states with unique layer degrees of freedom.
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Affiliation(s)
- Cheng-Syuan Cai
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Wei-Yan Lai
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Hsuan Liu
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Chieh Chou
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Ro-Ya Liu
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chih-Ming Lin
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shangjr Gwo
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Wei-Ting Hsu
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
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7
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Ryu H, Hong SC, Kim K, Jung Y, Lee Y, Lee K, Kim Y, Kim H, Watanabe K, Taniguchi T, Kim J, Kim K, Cheong H, Lee GH. Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing. NANOSCALE 2024. [PMID: 38439548 DOI: 10.1039/d3nr06641j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
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Affiliation(s)
- Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Seong Chul Hong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Kangwon Kim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Yeonjoon Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyunjun Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
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Zhang J, Zhai T, Arifurrahman F, Wang Y, Hitt A, He Z, Ai Q, Liu Y, Lin CY, Zhu Y, Tang M, Lou J. Toward Controlled Synthesis of 2D Crystals by CVD: Learning from the Real-Time Crystal Morphology Evolutions. NANO LETTERS 2024; 24:2465-2472. [PMID: 38349857 DOI: 10.1021/acs.nanolett.3c04016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/15/2024]
Abstract
The rich morphology of 2D materials grown through chemical vapor deposition (CVD), is a distinctive feature. However, understanding the complex growth of 2D crystals under practical CVD conditions remains a challenge due to various intertwined factors. Real-time monitoring is crucial to providing essential data and enabling the use of advanced tools like machine learning for unraveling these complexities. In this study, we present a custom-built miniaturized CVD system capable of observing and recording 2D MoS2 crystal growth in real time. Image processing converts the real-time footage into digital data, and machine learning algorithms (ML) unveil the significant factors influencing growth. The machine learning model successfully predicts CVD growth parameters for synthesizing ultralarge monolayer MoS2 crystals. It also demonstrates the potential to reverse engineer CVD growth parameters by analyzing the as-grown 2D crystal morphology. This interdisciplinary approach can be integrated to enhance our understanding of controlled 2D crystal synthesis through CVD.
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Affiliation(s)
- Jing Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Tianshu Zhai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Faizal Arifurrahman
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Yuguo Wang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Andrew Hitt
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Zelai He
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Qing Ai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Yifeng Liu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Chen-Yang Lin
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Yifan Zhu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Ming Tang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
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9
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Hu Z, Krisnanda T, Fieramosca A, Zhao J, Sun Q, Chen Y, Liu H, Luo Y, Su R, Wang J, Watanabe K, Taniguchi T, Eda G, Wang XR, Ghosh S, Dini K, Sanvitto D, Liew TCH, Xiong Q. Energy transfer driven brightening of MoS 2 by ultrafast polariton relaxation in microcavity MoS 2/hBN/WS 2 heterostructures. Nat Commun 2024; 15:1747. [PMID: 38409100 PMCID: PMC10897444 DOI: 10.1038/s41467-024-45554-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Accepted: 01/29/2024] [Indexed: 02/28/2024] Open
Abstract
Energy transfer is a ubiquitous phenomenon that delivers energy from a blue-shifted emitter to a red-shifted absorber, facilitating wide photonic applications. Two-dimensional (2D) semiconductors provide unique opportunities for exploring novel energy transfer mechanisms in the atomic-scale limit. Herein, we have designed a planar optical microcavity-confined MoS2/hBN/WS2 heterojunction, which realizes the strong coupling among donor exciton, acceptor exciton, and cavity photon mode. This configuration demonstrates an unconventional energy transfer via polariton relaxation, brightening MoS2 with a record-high enhancement factor of ~440, i.e., two-order-of-magnitude higher than the data reported to date. The polariton relaxation features a short characteristic time of ~1.3 ps, resulting from the significantly enhanced intra- and inter-branch exciton-exciton scattering. The polariton relaxation dynamics is associated with Rabi energies in a phase diagram by combining experimental and theoretical results. This study opens a new direction of microcavity 2D semiconductor heterojunctions for high-brightness polaritonic light sources and ultrafast polariton carrier dynamics.
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Affiliation(s)
- Zehua Hu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Tanjung Krisnanda
- Centre for Quantum Technologies, National University of Singapore, Singapore, 117543, Singapore
| | | | - Jiaxin Zhao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qianlu Sun
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yuzhong Chen
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P.R. China
| | - Haiyun Liu
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P.R. China
| | - Yuan Luo
- State Key Laboratory of Low-Dimensional Quantum, Department of Physics Physics, Tsinghua University, Beijing, 100084, P.R. China
| | - Rui Su
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Junyong Wang
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Goki Eda
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sanjib Ghosh
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P.R. China
| | - Kevin Dini
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
| | | | - Timothy C H Liew
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qihua Xiong
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P.R. China.
- State Key Laboratory of Low-Dimensional Quantum, Department of Physics Physics, Tsinghua University, Beijing, 100084, P.R. China.
- Frontier Science Center for Quantum Information, Beijing, 100084, P.R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China.
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10
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Li S, Liao K, Bi Y, Ding K, Sun E, Zhang C, Wang L, Hu F, Xiao M, Wang X. Optical readout of charge carriers stored in a 2D memory cell of monolayer WSe 2. NANOSCALE 2024; 16:3668-3675. [PMID: 38289585 DOI: 10.1039/d3nr04263d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Owing to their superior charge retaining and transport characteristics, 2D transition metal dichalcogenides are investigated for practical applications in various memory-cell structures. Herein, we fabricated a quasi-one-terminal 2D memory cell by partially depositing a WSe2 monolayer on an Au electrode, which can be manipulated to achieve efficient charge injection upon the application or removal of external bias. Furthermore, the amount of charge carriers stored in the memory cell could be optically probed because of its close correlation with the fluorescence efficiency of WSe2, allowing us to achieve an electron retention time of ∼300 s at the cryogenic temperature of 4 K. Accordingly, the simplified device structure and the non-contact optical readout of the stored charge carriers present new research opportunities for 2D memory cells in terms of both fundamental mechanism studies and practical development for integrated nanophotonic devices.
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Affiliation(s)
- Si Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Kan Liao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China.
| | - Yanfeng Bi
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Ke Ding
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Encheng Sun
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China.
| | - Fengrui Hu
- College of Engineering and Applied Sciences, and MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, Nanjing University, Nanjing 210093, China.
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
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11
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Park S, Kim J, Kim D, Watanabe K, Taniguchi T, Seo MK. Demonstration of Two-Dimensional Exciton Complex Palette. ACS NANO 2024. [PMID: 38335539 DOI: 10.1021/acsnano.3c11214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Exciton complexes in two-dimensional semiconductors, encompassing bright and dark excitons, biexcitons, and defect-bound excitons, have shown significant potential across a wide range of research areas. These applications range from exploring quantum many-body phenomena to developing nonclassical light sources and quantum transport devices. To fully leverage their dynamic and interactive properties and extend the capabilities of excitonic devices, realizing systematic engineering and mixing of the exciton complexes are crucial. Unlike conventional material methods, which often lead to undesired changes in the electronic band structure and binding energy, optical methods provide a means to manipulate the radiative decay dynamics of individual exciton complexes in a purely environmental manner. Here, we employ a specialized photonic platform, analogous to an artist's palette, to arrange and mix exciton complexes on an identical two-dimensional transition metal dichalcogenide medium. Essentially, a gradient thickness mirror (GTM) continuously tunes the local distribution of optical vacuum field interference. The GTM platform enables us to create and examine five distinct compositions of the exciton complexes of the WSe2 monolayer and their contributions to the photoluminescence spectrum. Moreover, the exciton complex palette facilitates the observation of dark and defect-bound excitons, even at high temperatures of 70 K, and its performance can be further managed by simple postprocessing manipulations.
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Affiliation(s)
- Sanghyeok Park
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
| | - Jaeyu Kim
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
| | - Dongha Kim
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Min-Kyo Seo
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
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12
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Dai B, Su Y, Guo Y, Wu C, Xie Y. Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets. Chem Rev 2024; 124:420-454. [PMID: 38146851 DOI: 10.1021/acs.chemrev.3c00422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.
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Affiliation(s)
- Baohu Dai
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yueqi Su
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yuqiao Guo
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Changzheng Wu
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yi Xie
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
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13
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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14
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Joung SY, Yim H, Lee D, Shim J, Yoo SY, Kim YH, Kim JS, Kim H, Hyeong SK, Kim J, Noh YY, Bae S, Park MJ, Choi JW, Lee CH. All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric. ACS NANO 2024; 18:1958-1968. [PMID: 38181200 DOI: 10.1021/acsnano.3c06972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2024]
Abstract
Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10-11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.
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Affiliation(s)
- Su-Yeon Joung
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Haena Yim
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Donghun Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jaehyung Shim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - So Yeon Yoo
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Yeon Ho Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jin Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Hyunjun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seok-Ki Hyeong
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
| | - Junhee Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Sukang Bae
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54896, Republic of Korea
| | - Myung Jin Park
- National Institute for Nanomaterials Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea
| | - Ji-Won Choi
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
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15
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Mondal S, Basak D. Excitonic Rydberg States in a Trilayer to Monolayer H 2-Aided CVD-Grown Large-Area MoS 2 Film with Excellent UV to Visible Broad Band Photodetection Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2940-2953. [PMID: 38176105 DOI: 10.1021/acsami.3c15655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.
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Affiliation(s)
- Sourav Mondal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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16
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Tran TT, Lee Y, Roy S, Tran TU, Kim Y, Taniguchi T, Watanabe K, Milošević MV, Lim SC, Chaves A, Jang JI, Kim J. Synergetic Enhancement of Quantum Yield and Exciton Lifetime of Monolayer WS 2 by Proximal Metal Plate and Negative Electric Bias. ACS NANO 2024; 18:220-228. [PMID: 38127273 DOI: 10.1021/acsnano.3c05667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.
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Affiliation(s)
- Trang Thu Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yongjun Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Shrawan Roy
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Uyen Tran
- Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Milorad V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso 78060-900, Brazil
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Andrey Chaves
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Departamento de Física, Universidade Federal do Ceará, Campus do Pici, C.P. 6030, 60455-900 Fortaleza, Ceará, Brazil
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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17
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Kim J, Rhee D, Jung M, Cheon GJ, Kim K, Kim JH, Park JY, Yoon J, Lim DU, Cho JH, Kim IS, Son D, Jariwala D, Kang J. Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors. ACS NANO 2024; 18:1073-1083. [PMID: 38100089 DOI: 10.1021/acsnano.3c10453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The significance of metal-semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal-semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal-oxide-semiconductor (channel)-semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Gang Jin Cheon
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kangsan Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jae Hyung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ji Yun Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jiyong Yoon
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - In Soo Kim
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Donghee Son
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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18
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Lee I, Kang M, Park S, Park C, Lee H, Bae S, Lim H, Kim S, Hong W, Choi SY. Healing Donor Defect States in CVD-Grown MoS 2 Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305143. [PMID: 37670210 DOI: 10.1002/smll.202305143] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/15/2023] [Indexed: 09/07/2023]
Abstract
Molybdenum disulfide (MoS2 ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (Vs ), can degrade the channel properties and lead to undesired n-doping. A method for healing the donor defect states in monolayer MoS2 is proposed using oxygen plasma, with an aluminum oxide (Al2 O3 ) barrier layer that protects the MoS2 channel from damage by plasma treatment. Successful healing of donor defect states in MoS2 by oxygen atoms, even in the presence of an Al2 O3 barrier layer, is confirmed by X-ray photoelectron spectroscopy, photoluminescence, and Raman spectroscopy. Despite the decrease in 2D sheet carrier concentration (Δn2D = -3.82×1012 cm-2 ), the proposed approach increases the on-current and mobility by 18% and 44% under optimal conditions, respectively. Metal-insulator transition occurs at electron concentrations of 5.7×1012 cm-2 and reflects improved channel quality. Finally, the activation energy (Ea ) reduces at all the gate voltages (VG ) owing to a decrease in Vs , which act as a localized state after the oxygen plasma treatment. This study demonstrates the feasibility of plasma-assisted healing of defects in 2D materials and electrical property enhancement and paves the way for the development of next-generation electronic devices.
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Affiliation(s)
- Inseong Lee
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Mingu Kang
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seohak Park
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Cheolmin Park
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeonji Lee
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sanggeun Bae
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeongjin Lim
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea
| | - Woonggi Hong
- Convergence Semiconductor Research Center, School of Electronics and Electrical Engineering, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do, 16890, Republic of Korea
| | - Sung-Yool Choi
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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19
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Park JB, Wu W, Wu JY, Karkee R, Kucinski TM, Bustillo KC, Schneider MM, Strubbe DA, Ophus C, Pettes MT. Enabling Oxidation Protection and Carrier-Type Switching for Bismuth Telluride Nanoribbons via in Situ Organic Molecule Coating. NANO LETTERS 2023; 23:11395-11401. [PMID: 38079217 PMCID: PMC10755739 DOI: 10.1021/acs.nanolett.3c02000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 11/24/2023] [Accepted: 11/27/2023] [Indexed: 12/28/2023]
Abstract
Thermoelectric materials with high electrical conductivity and low thermal conductivity (e.g., Bi2Te3) can efficiently convert waste heat into electricity; however, in spite of favorable theoretical predictions, individual Bi2Te3 nanostructures tend to perform less efficiently than bulk Bi2Te3. We report a greater-than-order-of-magnitude enhancement in the thermoelectric properties of suspended Bi2Te3 nanoribbons, coated in situ to form a Bi2Te3/F4-TCNQ core-shell nanoribbon without oxidizing the core-shell interface. The shell serves as an oxidation barrier but also directly functions as a strong electron acceptor and p-type carrier donor, switching the majority carriers from a dominant n-type carrier concentration (∼1021 cm-3) to a dominant p-type carrier concentration (∼1020 cm-3). Compared to uncoated Bi2Te3 nanoribbons, our Bi2Te3/F4-TCNQ core-shell nanoribbon demonstrates an effective chemical potential dramatically shifted toward the valence band (by 300-640 meV), robustly increased Seebeck coefficient (∼6× at 250 K), and improved thermoelectric performance (10-20× at 250 K).
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Affiliation(s)
- Jun Beom Park
- Center
for Integrated Nanotechnologies (CINT), Materials Physics and Applications
Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Wei Wu
- Department
of Mechanical Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States
| | - Jason Yingzhi Wu
- Department
of Mechanical Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States
| | - Rijan Karkee
- Center
for Integrated Nanotechnologies (CINT), Materials Physics and Applications
Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department
of Physics, University of California, Merced, California 95343, United States
| | - Theresa Marie Kucinski
- Center
for Integrated Nanotechnologies (CINT), Materials Physics and Applications
Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Karen C. Bustillo
- National
Center for Electron Microscopy (NCEM), Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Matthew M. Schneider
- Center
for Integrated Nanotechnologies (CINT), Materials Physics and Applications
Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Materials
Science in Radiation and Dynamics Extremes (MST-8), Materials Science
and Technology Division, Los Alamos National
Laboratory, Los Alamos, New Mexico 87545, United States
| | - David A. Strubbe
- Department
of Physics, University of California, Merced, California 95343, United States
| | - Colin Ophus
- National
Center for Electron Microscopy (NCEM), Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Michael Thompson Pettes
- Center
for Integrated Nanotechnologies (CINT), Materials Physics and Applications
Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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20
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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21
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Anand V S A, Sahoo MK, Mujeeb F, Varghese A, Dhar S, Lodha S, Kumar A. Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38044673 DOI: 10.1021/acsami.3c11564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
Two-dimensional semiconductors such as monolayer MoS2 have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has been hindered by the limited light absorption resulting from atomically thin thickness and low quantum yield. A highly effective approach to address these limitations is by integrating subwavelength plasmonic nanostructures with monolayer semiconductors. In this study, we employed electron beam lithography and nanoelectroplating techniques to develop a gold nanodisc (AuND) array plasmonic platform. Monolayer MoS2 transferred on top of the AuND array yields up to 150-fold photoluminescence enhancement compared to a gold film without normalization with respect to plasmonic hot spots. In addition, the unique protocol of nanoelectroplating helps to get flat-top cylindrical discs which enable less tear during the delicate wet transfer of monolayer MoS2. We explain our experimental findings based on electromagnetic simulations.
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Affiliation(s)
- Abhay Anand V S
- Laboratory of Optics of Quantum Materials (LOQM), Department of Physics, IIT Bombay, Mumbai 400076, Maharashtra, India
| | - Mihir Kumar Sahoo
- Laboratory of Optics of Quantum Materials (LOQM), Department of Physics, IIT Bombay, Mumbai 400076, Maharashtra, India
| | - Faiha Mujeeb
- Department of Physics, IIT Bombay, Mumbai 400076, Maharashtra, India
| | - Abin Varghese
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, Maharashtra, India
| | - Subhabrata Dhar
- Department of Physics, IIT Bombay, Mumbai 400076, Maharashtra, India
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, Maharashtra, India
| | - Anshuman Kumar
- Laboratory of Optics of Quantum Materials (LOQM), Department of Physics, IIT Bombay, Mumbai 400076, Maharashtra, India
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22
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Rahman IKMR, Uddin SZ, Yeh M, Higashitarumizu N, Kim J, Li Q, Lee H, Lee K, Kim H, Park C, Lim J, Ager JW, Javey A. Gate Controlled Excitonic Emission in Quantum Dot Thin Films. NANO LETTERS 2023; 23:10164-10170. [PMID: 37934978 DOI: 10.1021/acs.nanolett.3c02456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2023]
Abstract
Formation of charged trions is detrimental to the luminescence quantum efficiency of colloidal quantum dot (QD) thin films as they predominantly undergo nonradiative recombination. In this regard, control of charged trion formation is of interest for both fundamental characterization of the quasi-particles and performance optimization. Using CdSe/CdS QDs as a prototypical material system, here we demonstrate a metal-oxide-semiconductor capacitor based on QD thin films for studying the background charge effect on the luminescence efficiency and lifetime. The concentration ratio of the charged and neutral quasiparticles in the QDs is reversibly controlled by applying a gate voltage, while simultaneous steady-state and time-resolved photoluminescence measurements are performed. Notably, the photoluminescence intensity is modulated by up to 2 orders of magnitude with a corresponding change in the effective lifetime. In addition, chip-scale modulation of brightness is demonstrated, where the photoluminescence is effectively turned on and off by the gate, highlighting potential applications in voltage-controlled electrochromics.
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Affiliation(s)
- I K M Reaz Rahman
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Matthew Yeh
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jongchan Kim
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Quanwei Li
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Kavli Energy Nanoscience Institute at Berkeley, Berkeley, California 94720, United States
| | - Hyeonjun Lee
- Department of Energy Science and Centre for Artificial Atoms, Sungkyunkwan University, Natural Sciences Campus, Seobu-ro 2066, Jangan-gu, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Kyuho Lee
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - HoYeon Kim
- Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Cheolmin Park
- Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science and Centre for Artificial Atoms, Sungkyunkwan University, Natural Sciences Campus, Seobu-ro 2066, Jangan-gu, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Joel W Ager
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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23
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Konthoujam JS, Lin YS, Chang YH, Lin HT, Chang CY, Zhang YW, Lin SY, Kuo HC, Shih MH. Dynamical characteristics of AC-driven hybrid WSe 2 monolayer/AlGaInP quantum wells light-emitting device. DISCOVER NANO 2023; 18:140. [PMID: 37943364 PMCID: PMC10635932 DOI: 10.1186/s11671-023-03920-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Accepted: 10/30/2023] [Indexed: 11/10/2023]
Abstract
The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a significant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems.
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Affiliation(s)
| | - Yen-Shou Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Ya-Hui Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Hsiang-Ting Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
| | - Chiao-Yun Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
| | - Yu-Wei Zhang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Shih-Yen Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Hao-Chung Kuo
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Min-Hsiung Shih
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
- Department of Photonics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.
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24
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Xiao J, Chen K, Zhang X, Liu X, Yu H, Gao L, Hong M, Gu L, Zhang Z, Zhang Y. Approaching Ohmic Contacts for Ideal Monolayer MoS 2 Transistors Through Sulfur-Vacancy Engineering. SMALL METHODS 2023; 7:e2300611. [PMID: 37551044 DOI: 10.1002/smtd.202300611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Revised: 06/29/2023] [Indexed: 08/09/2023]
Abstract
Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS2 with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS2 FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS2 FETs with ultrahigh carrier mobility of 153 cm2 V-1 s-1 , a large on/off ratio of 4 × 109 , and high saturation current of 342 µA µm-1 . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.
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Affiliation(s)
- Jiankun Xiao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Kuanglei Chen
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiaozhi Liu
- Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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25
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Umeyama T, Mizutani D, Ikeda Y, Osterloh WR, Yamamoto F, Kato K, Yamakata A, Higashi M, Urakami T, Sato H, Imahori H. An emissive charge-transfer excited-state at the well-defined hetero-nanostructure interface of an organic conjugated molecule and two-dimensional inorganic nanosheet. Chem Sci 2023; 14:11914-11923. [PMID: 37920360 PMCID: PMC10619621 DOI: 10.1039/d3sc03604a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Accepted: 10/03/2023] [Indexed: 11/04/2023] Open
Abstract
Precise engineering of excited-state interactions between an organic conjugated molecule and a two-dimensional semiconducting inorganic nanosheet, specifically the manipulation of charge-transfer excited (CTE) states, still remains a challenge for state-of-the-art photochemistry. Herein, we report a long-lived, highly emissive CTE state at structurally well-defined hetero-nanostructure interfaces of photoactive pyrene and two-dimensional MoS2 nanosheets via an N-benzylsuccinimide bridge (Py-Bn-MoS2). Spectroscopic measurements reveal that no charge-transfer state is formed in the ground state, but the locally-excited (LE) state of pyrene in Py-Bn-MoS2 efficiently generates an unusual emissive CTE state. Theoretical studies elucidate the interaction of MoS2 vacant orbitals with the pyrene LE state to form a CTE state that shows a distinct solvent dependence of the emission energy. This is the first example of organic-inorganic 2D hetero-nanostructures displaying mixed luminescence properties by an accurate design of the bridge structure, and therefore represents an important step in their applications for energy conversion and optoelectronic devices and sensors.
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Affiliation(s)
- Tomokazu Umeyama
- Department of Applied Chemistry, Graduate School of Engineering, University of Hyogo Himeji Hyogo 671-2280 Japan
| | - Daizu Mizutani
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
| | - Yuki Ikeda
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
| | - W Ryan Osterloh
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
| | - Futa Yamamoto
- Department of Applied Chemistry, Graduate School of Engineering, University of Hyogo Himeji Hyogo 671-2280 Japan
| | - Kosaku Kato
- Graduate School of Natural Science and Technology, Okayama University Okayama 700-8530 Japan
| | - Akira Yamakata
- Graduate School of Natural Science and Technology, Okayama University Okayama 700-8530 Japan
| | - Masahiro Higashi
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
| | - Takumi Urakami
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
| | - Hirofumi Sato
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
| | - Hiroshi Imahori
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University Kyoto 615-8510 Japan
- Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University Kyoto 606-8501 Japan
- Institute for Liberal Arts and Sciences (ILAS), Kyoto University Kyoto 606-8501 Japan
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26
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Tenney SM, Tan LA, Tan X, Sonnleitner ML, Coffey B, Williams JA, Ronquillo R, Atallah TL, Ahmed T, Caram JR. Efficient 2D to 0D Energy Transfer in HgTe Nanoplatelet-Quantum Dot Heterostructures through High-Speed Exciton Diffusion. J Phys Chem Lett 2023; 14:9456-9463. [PMID: 37830914 DOI: 10.1021/acs.jpclett.3c02168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Large area absorbers with localized defect emission are of interest for energy concentration via the antenna effect. Transfer between 2D and 0D quantum-confined structures is advantageous as it affords maximal lateral area antennas with continuously tunable emission. We report the quantum efficiency of energy transfer in in situ grown HgTe nanoplatelet (NPL)/quantum dot (QD) heterostructures to be near unity (>85%), while energy transfer in separately synthesized and well separated solutions of HgTe NPLs to QDs only reaches 47 ± 11% at considerably higher QD concentrations. Using Kinetic Monte Carlo simulations, we estimate an exciton diffusion constant of 1-10 cm2/s in HgTe NPLs, the same magnitude as that of 2D semiconductors. We also simulate in-solution energy transfer between NPLs and QDs, recovering an R-4 dependence consistent with 2D-0D near-field energy transfer even in randomly distributed NPL/QD mixtures. This highlights the advantage of NPLs 2D morphology and the efficiency of NPL/QD heterostructures and mixtures for energy harvesting.
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Affiliation(s)
- Stephanie M Tenney
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Lauren A Tan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Xuanheng Tan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Mikayla L Sonnleitner
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Belle Coffey
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Jillian A Williams
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Ricky Ronquillo
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Timothy L Atallah
- Department of Chemistry and Biochemistry, Denison University, 500 West Loop, Granville, Ohio 43023, United States
| | - Tasnim Ahmed
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Justin R Caram
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
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27
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Walke P, Kaupmees R, Grossberg-Kuusk M, Krustok J. Unusual Defect-Related Room-Temperature Emission from WS 2 Monolayers Synthesized through a Potassium-Based Precursor. ACS OMEGA 2023; 8:37958-37970. [PMID: 37867715 PMCID: PMC10586178 DOI: 10.1021/acsomega.3c03476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 08/29/2023] [Indexed: 10/24/2023]
Abstract
Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.
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Affiliation(s)
- Peter Walke
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Reelika Kaupmees
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Maarja Grossberg-Kuusk
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Jüri Krustok
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
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28
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Mawlong LPL, Hoang AT, Chintalapalli J, Ji S, Lee K, Kim K, Ahn JH. Reduced Defect Density in MOCVD-Grown MoS 2 by Manipulating the Precursor Phase. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47359-47367. [PMID: 37756669 DOI: 10.1021/acsami.3c09027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.
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Affiliation(s)
- Larionette P L Mawlong
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jyothi Chintalapalli
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
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29
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Nishimura N, Tachibana H, Katoh R, Kanda H, Murakami TN. Archetype-Cation-Based Room-Temperature Ionic Liquid: Aliphatic Primary Ammonium Bis(trifluoromethylsulfonyl)imide as a Highly Functional Additive for a Hole Transport Material in Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:44859-44866. [PMID: 37688539 DOI: 10.1021/acsami.3c07615] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/11/2023]
Abstract
Room-temperature ionic liquids (RTILs) have attracted significant attention owing to their unique nature and a variety of potential applications. The archetypal RTIL comprising an aliphatic primary ammonium was discovered over a century ago, but this cation is seldom used in modern RTILs because other bulky cations (e.g., quaternary ammonium-, pyridine-, and imidazole-based cations) are prominent in current major applications, such as electrolytes and solvents, which require low and/or reversible reactivities. However, although the design of materials should change according to the intended application, RTIL designs remain conventional even when applied in unexplored fields, limiting their functions. Herein, RTIL consisting of an archetypal aliphatic primary ammonium (i.e., n-octylammonium: OA) cation and a modern bis(trifluoromethylsulfonyl)imide (TFSI) anion is proposed and demonstrated as a highly functional additive for a 2,2',7,7'-tetrakis(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD), which is the most common hole transport material (HTM), in perovskite solar cells (PSCs). The OA-TFSI additive exhibits prominent functions via permanent reactions of the component ions with the PSC components, thus providing several advantages. The OA cations spontaneously and densely passivate the perovskite layer during the HTM deposition process, leading to both suppression of carrier recombination at the HTM/perovskite interface and hydrophobic perovskite surfaces. Meanwhile, the TFSI anions effectively improve the HTM function most likely via efficient stabilization of the Spiro-OMeTAD radical, enhancing hole collection properties in the PSCs. Consequently, PSC performances involving long-term stability were significantly improved using the OA-TFSI additive. Based on the present results, this study advocates that reconsidering the RTIL design, even when it differs from the current major designs yet is suitable for a target application, can provide functions superior to conventional ones. The insights obtained in this work will spur further study of RTIL designs and aid the development of the broad materials science field including PSCs.
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Affiliation(s)
- Naoyuki Nishimura
- National Institute of Advanced Industrial Science and Technology (AIST),1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Hiroaki Tachibana
- National Institute of Advanced Industrial Science and Technology (AIST),1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Ryuzi Katoh
- College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan
| | - Hiroyuki Kanda
- National Institute of Advanced Industrial Science and Technology (AIST),1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Takurou N Murakami
- National Institute of Advanced Industrial Science and Technology (AIST),1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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30
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van der Laan M, Heemskerk E, Kienhuis F, Diepeveen N, Poonia D, Kinge S, Dang MT, Dinh VA, Siebbeles LDA, Isaeva A, van de Groep J, Schall P. Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS 2. ACS PHOTONICS 2023; 10:3115-3123. [PMID: 37743944 PMCID: PMC10515696 DOI: 10.1021/acsphotonics.3c00477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Indexed: 09/26/2023]
Abstract
Rhenium disulfide, a member of the transition metal dichalcogenide family of semiconducting materials, is unique among 2D van der Waals materials due to its anisotropy and, albeit weak, interlayer interactions, confining excitons within single atomic layers and leading to monolayer-like excitonic properties even in bulk crystals. While recent work has established the existence of two stacking modes in bulk, AA and AB, the influence of the different interlayer coupling on the excitonic properties has been poorly explored. Here, we use polarization-dependent optical measurements to elucidate the nature of excitons in AA and AB-stacked rhenium disulfide to obtain insight into the effect of interlayer interactions. We combine polarization-dependent Raman with low-temperature photoluminescence and reflection spectroscopy to show that, while the similar polarization dependence of both stacking orders indicates similar excitonic alignments within the crystal planes, differences in peak width, position, and degree of anisotropy reveal a different degree of interlayer coupling. DFT calculations confirm the very similar band structure of the two stacking orders while revealing a change of the spin-split states at the top of the valence band to possibly underlie their different exciton binding energies. These results suggest that the excitonic properties are largely determined by in-plane interactions, however, strongly modified by the interlayer coupling. These modifications are stronger than those in other 2D semiconductors, making ReS2 an excellent platform for investigating stacking as a tuning parameter for 2D materials. Furthermore, the optical anisotropy makes this material an interesting candidate for polarization-sensitive applications such as photodetectors and polarimetry.
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Affiliation(s)
- Marco van der Laan
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Edwin Heemskerk
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Floris Kienhuis
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Nella Diepeveen
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Deepika Poonia
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, 2629 HZ Delft, The Netherlands
| | - Sachin Kinge
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, 2629 HZ Delft, The Netherlands
- Materials
Research & Development, Toyota Motor
Europe, B1930 Zaventem, Belgium
| | - Minh Triet Dang
- School
of Education, Can Tho University, 3-2 Road, Can Tho City 900000, Vietnam
| | - Van An Dinh
- Department
of Precision Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Laurens D. A. Siebbeles
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, 2629 HZ Delft, The Netherlands
| | - Anna Isaeva
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
- Leibniz
IFW Dresden, Helmholtzstr.
20, D-01069 Dresden, Germany
| | - Jorik van de Groep
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Peter Schall
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
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31
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Ahn B, Kim Y, Kim M, Yu HM, Ahn J, Sim E, Ji H, Gul HZ, Kim KS, Ihm K, Lee H, Kim EK, Lim SC. One-Step Passivation of Both Sulfur Vacancies and SiO 2 Interface Traps of MoS 2 Device. NANO LETTERS 2023; 23:7927-7933. [PMID: 37647420 DOI: 10.1021/acs.nanolett.3c01753] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.
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Affiliation(s)
- Byungwook Ahn
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yoonsok Kim
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
- Institute of Plasma Technology, Korea Institute of Fusion Energy, Gunsan 54004, Republic of Korea
| | - Meeree Kim
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyang Mi Yu
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jaehun Ahn
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Eunji Sim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyunjin Ji
- Department of Electrical Engineering, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Hamza Zad Gul
- Department of Electrical Engineering, Namal University, 30 km Talagang Road, Mianwali 42250, Pakistan
| | - Keun Soo Kim
- Department of Physics and Graphene Research Institute, Sejong University, Seoul 05006, Republic of Korea
| | - Kyuwook Ihm
- Nano & Interface Research Team, Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Hyoyoung Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Eun Kyu Kim
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
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32
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Yao YC, Wu BY, Chin HT, Yen ZL, Ting CC, Hofmann M, Hsieh YP. Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42746-42752. [PMID: 37646637 DOI: 10.1021/acsami.3c07793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (2D TMDCs) are considered promising materials for optoelectronics due to their unique optical and electric properties. However, their potential has been limited by the occurrence of atomic vacancies during synthesis. While post-treatment processes have demonstrated the passivation of such vacancies, they increase process complexity and affect the TMDC's quality. We here introduce the concept of pretreatment as a facile and powerful route to solve the problem of vacancies in MoS2. Low-temperature nitridation of the sapphire substrate prior to growth provides a nondestructive method to MoS2 modification without introducing new processing steps or increasing the thermal budget. Spectroscopic characterization and atomic-resolution microscopy reveal the incorporation of nitrogen from the sapphire surface layer into chalcogen vacancies. The resulting MoS2 with nitrogen-saturated defects shows a decrease in midgap states and more intrinsic doping as confirmed by ab initio calculations and optoelectronic measurements. The demonstrated pretreatment method opens up new routes toward future, high-performance 2D electronics, as evidenced by a 3-fold reduction in contact resistance and a 10-fold improved performance of 2D photodetectors.
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Affiliation(s)
- Yu-Chi Yao
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Bo-Yi Wu
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Hao-Ting Chin
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Chu-Chi Ting
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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33
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Xu N, Hong D, Liang B, Qiu L, Tian Y, Li S. Lattice Vacancy Induced Energy Renormalization of Photonic Quasiparticles in Two-Dimensional Semiconductors. ACS NANO 2023; 17:16904-16911. [PMID: 37603694 DOI: 10.1021/acsnano.3c03996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
Coulomb interactions among dense charges and quasiparticle energy renormalization are at the center of quantum science because they significantly reshape the fundamental electronic and photonic properties of materials. While lattice vacancies are ubiquitous in solid materials, their physical effect on the Coulomb interaction among quasiparticles is normally weak and negligible. Here we show that in atomically thin semiconductors the presence of lattice vacancies emerges as an important but unexplored origin for the nontrivial renormalization of quasiparticle binding energies, due to the subtle modification of overall dielectric functions at low dimensionality. Such a renormalization effect leads to unusual reduction in the energy scales of photonic quasiparticles and red shifts of photoluminescence as the density of lattice vacancies increases. With strict configurative form factors derived, a dielectric screening model is also established for the generalized trilayer systems to capture the fine modification in the energy scales of quasiparticles and to elucidate the dielectric functions versus realistic Bohr lengths. This finding highlights the essential but commonly neglected role of lattice vacancies and deciphers the longstanding enigma of unpredictable photoluminescent line shifts in low-dimensional systems.
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Affiliation(s)
- Ning Xu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Daocheng Hong
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Binxi Liang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Lipeng Qiu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yuxi Tian
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Songlin Li
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
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34
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Del Águila AG, Wong YR, Wadgaonkar I, Fieramosca A, Liu X, Vaklinova K, Dal Forno S, Do TTH, Wei HY, Watanabe K, Taniguchi T, Novoselov KS, Koperski M, Battiato M, Xiong Q. Ultrafast exciton fluid flow in an atomically thin MoS 2 semiconductor. NATURE NANOTECHNOLOGY 2023; 18:1012-1019. [PMID: 37524907 DOI: 10.1038/s41565-023-01438-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2022] [Accepted: 06/01/2023] [Indexed: 08/02/2023]
Abstract
Excitons (coupled electron-hole pairs) in semiconductors can form collective states that sometimes exhibit spectacular nonlinear properties. Here, we show experimental evidence of a collective state of short-lived excitons in a direct-bandgap, atomically thin MoS2 semiconductor whose propagation resembles that of a classical liquid as suggested by the nearly uniform photoluminescence through the MoS2 monolayer regardless of crystallographic defects and geometric constraints. The exciton fluid flows over ultralong distances (at least 60 μm) at a speed of ~1.8 × 107 m s-1 (~6% the speed of light). The collective phase emerges above a critical laser power, in the absence of free charges and below a critical temperature (usually Tc ≈ 150 K) approaching room temperature in hexagonal-boron-nitride-encapsulated devices. Our theoretical simulations suggest that momentum is conserved and local equilibrium is achieved among excitons; both these features are compatible with a fluid dynamics description of the exciton transport.
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Affiliation(s)
- Andrés Granados Del Águila
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
| | - Yi Ren Wong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Indrajit Wadgaonkar
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Antonio Fieramosca
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Xue Liu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, P.R. China
| | - Kristina Vaklinova
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - Stefano Dal Forno
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - T Thu Ha Do
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore
| | - Ho Yi Wei
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - K Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Materials Science, Tsukuba, Japan
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Maciej Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Marco Battiato
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, P.R. China.
- Frontier Science Center for Quantum Information, Beijing, P.R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China.
- Beijing Academy of Quantum Information Sciences, Beijing, P.R. China.
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35
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Liu B, Lynch J, Zhao H, Conran BR, McAleese C, Jariwala D, Forrest SR. Long-Range Propagation of Exciton-Polaritons in Large-Area 2D Semiconductor Monolayers. ACS NANO 2023. [PMID: 37489978 DOI: 10.1021/acsnano.3c03485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
Atomically thin transition metal dichalcogenides (TMDs), a subclass of two-dimensional (2D) layered materials, have numerous fascinating properties that make them a promising platform for photonic and optoelectronic devices. In particular, excited state transport by TMDs is important in energy harvesting and photonic switching; however, long-range transport in TMDs is challenging due to the lack of availability of large area films. Whereas most previous studies have focused on small, exfoliated monolayer flakes, in this work we demonstrate metal-organic chemical vapor deposition grown centimeter-scale monolayers of WS2 that support polariton propagation lengths of up to 60 μm. The polaritons form through the strong coupling of excitons with Bloch surface waves (BSWs) supported by all-dielectric photonic structures. We observe that the propagation length increases with the number of dielectric pairs due to the increased quality factor of the supporting distributed Bragg reflector. Furthermore, a longer propagation length is observed as the guided or BSW content of the polariton is increased. Our results provide a practical approach for the systematic engineering of long-range energy transport mediated by exciton-polaritons in TMD layers. Along with the accessibility of large area TMDs, our work enables applications for practical TMD-based polaritonic devices that operate at room temperature.
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Affiliation(s)
- Bin Liu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Jason Lynch
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Haonan Zhao
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Ben R Conran
- AIXTRON Ltd, Swavesey, Cambridge CB24 4FQ, United Kingdom
| | | | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Stephen R Forrest
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
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36
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Jiang Y, Liu Z, Zhou H, Sharma A, Deng J, Ke C. Physical adsorption and oxidation of ultra-thin MoS 2crystals: insights into surface engineering for 2D electronics and beyond. NANOTECHNOLOGY 2023; 34:405701. [PMID: 37462320 DOI: 10.1088/1361-6528/ace1f7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Accepted: 06/26/2023] [Indexed: 01/25/2024]
Abstract
The oxidation mechanism of atomically thin molybdenum disulfide (MoS2) plays a critical role in its nanoelectronics, optoelectronics, and catalytic applications, where devices often operate in an elevated thermal environment. In this study, we systematically investigate the oxidation of mono- and few-layer MoS2flakes in the air at temperatures ranging from 23 °C to 525 °C and relative humidities of 10%-60% by using atomic force microscopy (AFM), Raman spectroscopy and x-ray photoelectron spectroscopy. Our study reveals the formation of a uniform nanometer-thick physical adsorption layer on the surface of MoS2, which is attributed to the adsorption of ambient moisture. This physical adsorption layer acts as a thermal shield of the underlying MoS2lattice to enhance its thermal stability and can be effectively removed by an AFM tip scanning in contact mode or annealing at 400 °C. Our study shows that high-temperature thermal annealing and AFM tip-based cleaning result in chemical adsorption on sulfur vacancies in MoS2, leading to p-type doping. Our study highlights the importance of humidity control in ensuring reliable and optimal performance for MoS2-based electronic and electrochemical devices and provides crucial insights into the surface engineering of MoS2, which are relevant to the study of other two-dimensional transition metal dichalcogenide materials and their applications.
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Affiliation(s)
- Yingchun Jiang
- Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Zihan Liu
- Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Huimin Zhou
- Department of Systems Science and Industrial Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Anju Sharma
- Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Jia Deng
- Department of Systems Science and Industrial Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Changhong Ke
- Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
- Materials Science and Engineering Program, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
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37
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Lukianov MY, Rubekina AA, Bondareva JV, Sybachin AV, Diudbin GD, Maslakov KI, Kvashnin DG, Klimova-Korsmik OG, Shirshin EA, Evlashin SA. Photoluminescence of Two-Dimensional MoS 2 Nanosheets Produced by Liquid Exfoliation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1982. [PMID: 37446499 DOI: 10.3390/nano13131982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 06/23/2023] [Accepted: 06/27/2023] [Indexed: 07/15/2023]
Abstract
Extraordinary properties of two-dimensional materials make them attractive for applications in different fields. One of the prospective niches is optical applications, where such types of materials demonstrate extremely sensitive performance and can be used for labeling. However, the optical properties of liquid-exfoliated 2D materials need to be analyzed. The purpose of this work is to study the absorption and luminescent properties of MoS2 exfoliated in the presence of sodium cholate, which is the most often used surfactant. Ultrasound bath and mixer-assisted exfoliation in water and dimethyl sulfoxide were used. The best quality of MoS2 nanosheets was achieved using shear-assisted liquid-phase exfoliation as a production method and sodium cholate (SC) as a surfactant. The photoluminescent properties of MoS2 nanosheets varied slightly when changing the surfactant concentrations in the range C(SC) = 0.5-2.5 mg/mL. This work is of high practical importance for further enhancement of MoS2 photoluminescent properties via chemical functionalization.
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Affiliation(s)
| | - Anna A Rubekina
- Department of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | | | - Andrey V Sybachin
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia
| | - George D Diudbin
- Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 119991 Moscow, Russia
| | | | - Dmitry G Kvashnin
- Emanuel Institute of Biochemical Physics of the Russian Academy of Sciences, 119334 Moscow, Russia
| | - Olga G Klimova-Korsmik
- World-Class Research Center "Advanced Digital Technologies", State Marine Technical University, 190121 Saint Petersburg, Russia
| | - Evgeny A Shirshin
- Department of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
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38
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Ismail KBM, Arun Kumar M, Mahalingam S, Kim J, Atchudan R. Recent Advances in Molybdenum Disulfide and Its Nanocomposites for Energy Applications: Challenges and Development. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4471. [PMID: 37374654 DOI: 10.3390/ma16124471] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 06/13/2023] [Accepted: 06/16/2023] [Indexed: 06/29/2023]
Abstract
Energy storage and conversion are critical components of modern energy systems, enabling the integration of renewable energy sources and the optimization of energy use. These technologies play a key role in reducing greenhouse gas emissions and promoting sustainable development. Supercapacitors play a vital role in the development of energy storage systems due to their high power density, long life cycles, high stability, low manufacturing cost, fast charging-discharging capability and eco-friendly. Molybdenum disulfide (MoS2) has emerged as a promising material for supercapacitor electrodes due to its high surface area, excellent electrical conductivity, and good stability. Its unique layered structure also allows for efficient ion transport and storage, making it a potential candidate for high-performance energy storage devices. Additionally, research efforts have focused on improving synthesis methods and developing novel device architectures to enhance the performance of MoS2-based devices. This review article on MoS2 and MoS2-based nanocomposites provides a comprehensive overview of the recent advancements in the synthesis, properties, and applications of MoS2 and its nanocomposites in the field of supercapacitors. This article also highlights the challenges and future directions in this rapidly growing field.
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Affiliation(s)
- Kamal Batcha Mohamed Ismail
- Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru 561203, Karnataka, India
- Department of Electronics and Communication Engineering, Agni College of Technology, Chennai 600130, Tamil Nadu, India
| | - Manoharan Arun Kumar
- Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru 561203, Karnataka, India
| | - Shanmugam Mahalingam
- Department of Materials System Engineering, Pukyong National University, Busan 48513, Republic of Korea
| | - Junghwan Kim
- Department of Materials System Engineering, Pukyong National University, Busan 48513, Republic of Korea
| | - Raji Atchudan
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
- Department of Chemistry, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Chennai 602105, Tamil Nadu, India
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39
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Tsai PC, Huang CW, Chang SJ, Chang SW, Lin SY. In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers. Sci Rep 2023; 13:9197. [PMID: 37280332 DOI: 10.1038/s41598-023-36405-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Accepted: 06/01/2023] [Indexed: 06/08/2023] Open
Abstract
We demonstrate in-plane gate transistors based on the molybdenum disulfide (MoS2)/graphene hetero-structure. The graphene works as channels while MoS2 functions as passivation layers. The weak hysteresis of the device suggests that the MoS2 layer can effectively passivate the graphene channel. The characteristics of devices with and without removal of MoS2 between electrodes and graphene are also compared. The device with direct electrode/graphene contact shows a reduced contact resistance, increased drain current, and enhanced field-effect mobility. The higher field-effect mobility than that obtained through Hall measurement indicates that more carriers are present in the channel, rendering it more conductive.
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Affiliation(s)
- Po-Cheng Tsai
- Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan
| | - Chun-Wei Huang
- Institute of Microelectronics, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan
| | - Shoou-Jinn Chang
- Institute of Microelectronics, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan
- Department of Electrical Engineering, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan
| | - Shu-Wei Chang
- Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan.
- Department of Photonics, National Yang Ming Chiao Tung University, 1001 University Road, Hsin-chu, 30010, Taiwan.
| | - Shih-Yen Lin
- Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan.
- Department of Electrical Engineering, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan.
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40
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Choi MY, Choi CW, Kim DY, Jo MH, Kim YS, Choi SY, Kim CJ. Thermodynamically Driven Tilt Grain Boundaries of Monolayer Crystals Using Catalytic Liquid Alloys. NANO LETTERS 2023; 23:4516-4523. [PMID: 37184356 PMCID: PMC10215786 DOI: 10.1021/acs.nanolett.3c00935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2023] [Revised: 05/06/2023] [Indexed: 05/16/2023]
Abstract
We report a method to precisely control the atomic defects at grain boundaries (GBs) of monolayer MoS2 by vapor-liquid-solid (VLS) growth using sodium molybdate liquid alloys, which serve as growth catalysts to guide the formations of the thermodynamically most stable GB structure. The Mo-rich chemical environment of the alloys results in Mo-polar 5|7 defects with a yield exceeding 95%. The photoluminescence (PL) intensity of VLS-grown polycrystalline MoS2 films markedly exceeds that of the films, exhibiting abundant S 5|7 defects, which are kinetically driven by vapor-solid-solid growths. Density functional theory calculations indicate that the enhanced PL intensity is due to the suppression of nonradiative recombination of charged excitons with donor-type defects of adsorbed Na elements on S 5|7 defects. Catalytic liquid alloys can aid in determining a type of atomic defect even in various polycrystalline 2D films, which accordingly provides a technical clue to engineer their properties.
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Affiliation(s)
- Min-Yeong Choi
- Center
for Van der Waals Quantum Solids, Institute
for Basic Science (IBS), Pohang 37673, Republic
of Korea
- Department
of Chemical Engineering, Pohang University
of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Chang-Won Choi
- Center
for Van der Waals Quantum Solids, Institute
for Basic Science (IBS), Pohang 37673, Republic
of Korea
- Department
of Materials Science & Engineering, POSTECH, Pohang 37673, Republic of Korea
| | - Dong-Yeong Kim
- Center
for Van der Waals Quantum Solids, Institute
for Basic Science (IBS), Pohang 37673, Republic
of Korea
- Department
of Chemical Engineering, Pohang University
of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Moon-Ho Jo
- Center
for Van der Waals Quantum Solids, Institute
for Basic Science (IBS), Pohang 37673, Republic
of Korea
- Department
of Materials Science & Engineering, POSTECH, Pohang 37673, Republic of Korea
| | - Yong-Sung Kim
- Korea
Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
- Department
of Nano Science, University of Science and
Technology, Daejeon 34113, Republic of Korea
| | - Si-Young Choi
- Center
for Van der Waals Quantum Solids, Institute
for Basic Science (IBS), Pohang 37673, Republic
of Korea
- Department
of Materials Science & Engineering, POSTECH, Pohang 37673, Republic of Korea
- Department
of Semiconductor Engineering, POSTECH, Pohang 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center
for Van der Waals Quantum Solids, Institute
for Basic Science (IBS), Pohang 37673, Republic
of Korea
- Department
of Chemical Engineering, Pohang University
of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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41
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Dziobek-Garrett R, Imperiale CJ, Wilson MWB, Kempa TJ. Photon Upconversion in a Vapor Deposited 2D Inorganic-Organic Semiconductor Heterostructure. NANO LETTERS 2023. [PMID: 37191568 DOI: 10.1021/acs.nanolett.3c00380] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Energy transfer processes may be engineered in van der Waals heterostructures by taking advantage of the atomically abrupt, Å-scale, and topologically tailorable interfaces within them. Here, we prepare heterostructures comprised of 2D WSe2 monolayers interfaced with dibenzotetraphenylperiflanthene (DBP)-doped rubrene, an organic semiconductor capable of triplet fusion. We fabricate these heterostructures entirely through vapor deposition methods. Time-resolved and steady-state photoluminescence measurements reveal rapid subnanosecond quenching of WSe2 emission by rubrene and fluorescence from guest DBP molecules at 612 nm (λexc = 730 nm), thus providing clear evidence of photon upconversion. The dependence of the upconversion emission on excitation intensity is consistent with a triplet fusion mechanism, and maximum efficiency (linear regime) of this process occurs at threshold intensities as low as 110 mW/cm2, which is comparable to the integrated solar irradiance. This study highlights the potential for advanced optoelectronic applications employing vdWHs which leverage strongly bound excitons in monolayer TMDs and organic semiconductors.
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Affiliation(s)
| | | | - Mark W B Wilson
- Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3H6, Canada
| | - Thomas J Kempa
- Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
- Department of Materials Science & Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
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42
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Wang V, Uddin SZ, Park J, Javey A. Highly multicolored light-emitting arrays for compressive spectroscopy. SCIENCE ADVANCES 2023; 9:eadg1607. [PMID: 37075124 PMCID: PMC10115405 DOI: 10.1126/sciadv.adg1607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Miniaturized, multicolored light-emitting device arrays are promising for applications in sensing, imaging, computing, and more, but the range of emission colors achievable by a conventional light-emitting diode is limited by material or device constraints. In this work, we demonstrate a highly multicolored light-emitting array with 49 different, individually addressable colors on a single chip. The array consists of pulsed-driven metal-oxide-semiconductor capacitors, which generate electroluminescence from microdispensed materials spanning a diverse range of colors and spectral shapes, enabling facile generation of arbitrary light spectra across a broad wavelength range (400 to 1400 nm). When combined with compressive reconstruction algorithms, these arrays can be used to perform spectroscopic measurements in a compact manner without diffractive optics. As an example, we demonstrate microscale spectral imaging of samples using a multiplexed electroluminescent array in conjunction with a monochrome camera.
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Affiliation(s)
- Vivian Wang
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Junho Park
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Corresponding author.
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43
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Anbalagan AK, Hu FC, Chan WK, Gandhi AC, Gupta S, Chaudhary M, Chuang KW, Ramesh AK, Billo T, Sabbah A, Chiang CY, Tseng YC, Chueh YL, Wu SY, Tai NH, Chen HYT, Lee CH. Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS 2 Sputtered Few-Layered Thin Films. ACS NANO 2023; 17:6555-6564. [PMID: 36951422 DOI: 10.1021/acsnano.2c11955] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm3 at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.
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Affiliation(s)
- Aswin Kumar Anbalagan
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Fang-Chi Hu
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Weng Kent Chan
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shivam Gupta
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mayur Chaudhary
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Wei Chuang
- Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Akhil K Ramesh
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30013, Taiwan
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Tadesse Billo
- European Synchrotron Radiation Facility, 71 avenue des Martyrs, Grenoble 38000, France
| | - Amr Sabbah
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Ching-Yu Chiang
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Yuan-Chieh Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
| | - Nyan-Hwa Tai
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hsin-Yi Tiffany Chen
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan
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44
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Wang T, Hopper TR, Mondal N, Liu S, Yao C, Zheng X, Torrisi F, Bakulin AA. Hot Carrier Cooling and Trapping in Atomically Thin WS 2 Probed by Three-Pulse Femtosecond Spectroscopy. ACS NANO 2023; 17:6330-6340. [PMID: 36939760 PMCID: PMC10100566 DOI: 10.1021/acsnano.2c10479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Accepted: 03/14/2023] [Indexed: 06/18/2023]
Abstract
Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier-carrier and carrier-phonon interactions that are foundational to hot carrier cooling. Recent transient absorption studies have reported ultrafast time scales for carrier cooling in TMDs that can be slowed at high excitation densities via a hot-phonon bottleneck (HPB) and discussed these findings in the light of optoelectronic applications. However, quantitative descriptions of the HPB in TMDs, including details of the electron-lattice coupling and how cooling is affected by the redistribution of energy between carriers, are still lacking. Here, we use femtosecond pump-push-probe spectroscopy as a single approach to systematically characterize the scattering of hot carriers with optical phonons, cold carriers, and defects in a benchmark TMD monolayer of polycrystalline WS2. By controlling the interband pump and intraband push excitations, we observe, in real-time (i) an extremely rapid "intrinsic" cooling rate of ∼18 ± 2.7 eV/ps, which can be slowed with increasing hot carrier density, (ii) the deprecation of this HPB at elevated cold carrier densities, exposing a previously undisclosed role of the carrier-carrier interactions in mediating cooling, and (iii) the interception of high energy hot carriers on the subpicosecond time scale by lattice defects, which may account for the lower photoluminescence yield of TMDs when excited above band gap.
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Affiliation(s)
- Tong Wang
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Thomas R. Hopper
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
- Department
of Materials Science and Engineering, Stanford
University, Stanford, California 94305, United States
| | - Navendu Mondal
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Sihui Liu
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Chengning Yao
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Xijia Zheng
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Felice Torrisi
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
- Dipartimento
di Fisica e Astronomia, Universita’
di Catania & CNR-IMM (Catania Universita’), Via S. Sofia 64, 95123 Catania, Italy
| | - Artem A. Bakulin
- Department
of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
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45
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Li Q, Alfrey A, Hu J, Lydick N, Paik E, Liu B, Sun H, Lu Y, Wang R, Forrest S, Deng H. Macroscopic transition metal dichalcogenides monolayers with uniformly high optical quality. Nat Commun 2023; 14:1837. [PMID: 37005420 PMCID: PMC10067954 DOI: 10.1038/s41467-023-37500-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 03/19/2023] [Indexed: 04/04/2023] Open
Abstract
The unique optical properties of transition metal dichalcogenide (TMD) monolayers have attracted significant attention for both photonics applications and fundamental studies of low-dimensional systems. TMD monolayers of high optical quality, however, have been limited to micron-sized flakes produced by low-throughput and labour-intensive processes, whereas large-area films are often affected by surface defects and large inhomogeneity. Here we report a rapid and reliable method to synthesize macroscopic-scale TMD monolayers of uniform, high optical quality. Using 1-dodecanol encapsulation combined with gold-tape-assisted exfoliation, we obtain monolayers with lateral size > 1 mm, exhibiting exciton energy, linewidth, and quantum yield uniform over the whole area and close to those of high-quality micron-sized flakes. We tentatively associate the role of the two molecular encapsulating layers as isolating the TMD from the substrate and passivating the chalcogen vacancies, respectively. We demonstrate the utility of our encapsulated monolayers by scalable integration with an array of photonic crystal cavities, creating polariton arrays with enhanced light-matter coupling strength. This work provides a pathway to achieving high-quality two-dimensional materials over large areas, enabling research and technology development beyond individual micron-sized devices.
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Affiliation(s)
- Qiuyang Li
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Adam Alfrey
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Jiaqi Hu
- Applied Physics Program, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Nathanial Lydick
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Eunice Paik
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Bin Liu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Haiping Sun
- Michigan Center for Materials Characterization, College of Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Yang Lu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Ruoyu Wang
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Stephen Forrest
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
- Applied Physics Program, University of Michigan, Ann Arbor, MI, 48109, USA
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Hui Deng
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA.
- Applied Physics Program, University of Michigan, Ann Arbor, MI, 48109, USA.
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46
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Hekmati R, Hadden JP, Mathew A, Bishop SG, Lynch SA, Bennett AJ. Bullseye dielectric cavities for photon collection from a surface-mounted quantum-light-emitter. Sci Rep 2023; 13:5316. [PMID: 37002334 PMCID: PMC10066359 DOI: 10.1038/s41598-023-32359-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Accepted: 03/27/2023] [Indexed: 04/03/2023] Open
Abstract
Coupling light from a point source to a propagating mode is an important problem in nano-photonics and is essential for many applications in quantum optics. Circular "bullseye" cavities, consisting of concentric rings of alternating refractive index, are a promising technology that can achieve near-unity coupling into a first lens. Here we design a bullseye structure suitable for enhancing the emission from dye molecules, 2D materials and nano-diamonds positioned on the surface of these cavities. A periodic design of cavity, meeting the Bragg scattering condition, achieves a Purcell factor of 22.5 and collection efficiency of 80%. We also tackle the more challenging task of designing a cavity for coupling to a low numerical aperture fibre in the near field. Finally, using an iterative procedure, we study how the collection efficiency varies with apodised (non-periodic) rings.
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Affiliation(s)
- Reza Hekmati
- School of Physics and Astronomy, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK
| | - John P Hadden
- School of Engineering, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK
| | - Annie Mathew
- School of Physics and Astronomy, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK
| | - Samuel G Bishop
- School of Engineering, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK
| | - Stephen A Lynch
- School of Physics and Astronomy, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK
| | - Anthony J Bennett
- School of Physics and Astronomy, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK.
- School of Engineering, Cardiff University, Queen's Buildings, Cardiff, CF24 3AA, UK.
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47
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Niebur A, Söll A, Haizmann P, Strolka O, Rudolph D, Tran K, Renz F, Frauendorf AP, Hübner J, Peisert H, Scheele M, Lauth J. Untangling the intertwined: metallic to semiconducting phase transition of colloidal MoS 2 nanoplatelets and nanosheets. NANOSCALE 2023; 15:5679-5688. [PMID: 36861175 DOI: 10.1039/d3nr00096f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
2D semiconducting transition metal dichalcogenides (TMDCs) are highly promising materials for future spin- and valleytronic applications and exhibit an ultrafast response to external (optical) stimuli which is essential for optoelectronics. Colloidal nanochemistry on the other hand is an emerging alternative for the synthesis of 2D TMDC nanosheet (NS) ensembles, allowing for the control of the reaction via tunable precursor and ligand chemistry. Up to now, wet-chemical colloidal syntheses yielded intertwined/agglomerated NSs with a large lateral size. Here, we show a synthesis method for 2D mono- and bilayer MoS2 nanoplatelets with a particularly small lateral size (NPLs, 7.4 nm ± 2.2 nm) and MoS2 NSs (22 nm ± 9 nm) as a reference by adjusting the molybdenum precursor concentration in the reaction. We find that in colloidal 2D MoS2 syntheses initially a mixture of the stable semiconducting and the metastable metallic crystal phase is formed. 2D MoS2 NPLs and NSs then both undergo a full transformation to the semiconducting crystal phase by the end of the reaction, which we quantify by X-ray photoelectron spectroscopy. Phase pure semiconducting MoS2 NPLs with a lateral size approaching the MoS2 exciton Bohr radius exhibit strong additional lateral confinement, leading to a drastically shortened decay of the A and B exciton which is characterized by ultrafast transient absorption spectroscopy. Our findings represent an important step for utilizing colloidal TMDCs, for example small MoS2 NPLs represent an excellent starting point for the growth of heterostructures for future colloidal photonics.
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Affiliation(s)
- André Niebur
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
| | - Aljoscha Söll
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
| | - Philipp Haizmann
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Onno Strolka
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Dominik Rudolph
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
| | - Kevin Tran
- Institute of Inorganic Chemistry, Leibniz University Hannover, Callinstr. 9, D-30167 Hannover, Germany
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
| | - Franz Renz
- Institute of Inorganic Chemistry, Leibniz University Hannover, Callinstr. 9, D-30167 Hannover, Germany
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
| | - André Philipp Frauendorf
- Institute of Solid State Physics, Leibniz University Hannover, Appelstr. 2, D-30167 Hannover, Germany
| | - Jens Hübner
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
- Institute of Solid State Physics, Leibniz University Hannover, Appelstr. 2, D-30167 Hannover, Germany
| | - Heiko Peisert
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
| | - Jannika Lauth
- Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, D-30167 Hannover, Germany.
- Cluster of Excellence PhoenixD (Photonics, Optics, and Engineering - Innovation Across Disciplines), Hannover, Germany
- Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, D-72076 Tübingen, Germany
- Laboratory of Nano and Quantum Engineering (LNQE), Leibniz University Hannover, Schneiderberg 39, D-30167 Hannover, Germany
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48
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Park S, Kim D, Choi YS, Baucour A, Kim D, Yoon S, Watanabe K, Taniguchi T, Shin J, Kim J, Seo MK. Customizing Radiative Decay Dynamics of Two-Dimensional Excitons via Position- and Polarization-Dependent Vacuum-Field Interference. NANO LETTERS 2023; 23:2158-2165. [PMID: 36854053 DOI: 10.1021/acs.nanolett.2c04604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Embodying bosonic and interactive characteristics in two-dimensional space, excitons in transition metal dichalcogenides (TMDCs) have garnered considerable attention. The utilization of the strong-correlation effects, long-range transport, and valley-dependent properties requires customizing exciton decay dynamics. Vacuum-field manipulation allows radiative decay engineering without disturbing intrinsic material properties. However, conventional flat mirrors cannot customize the radiative decay landscape in TMDC's plane or support vacuum-field interference with desired spectrum and polarization properties. Here, we present a meta-mirror platform resolving the issues with more optical degrees of freedom. For neutral excitons of the monolayer MoSe2, the optical layout formed by meta-mirrors manipulated the radiative decay rate in space by 2 orders of magnitude and revealed the statistical correlation between emission intensity and spectral line width. Moreover, the anisotropic meta-mirror demonstrated polarization-dependent radiative decay control. Our platform would be promising to tailor two-dimensional distributions of lifetime, density, diffusion, and polarization of TMDC excitons in advanced opto-excitonic applications.
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Affiliation(s)
- Sanghyeok Park
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Dongha Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Yun-Seok Choi
- Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Arthur Baucour
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Donghyeong Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Sangho Yoon
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Jonghwa Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Jonghwan Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Min-Kyo Seo
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
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49
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Fu S, Jia X, Hassan AS, Zhang H, Zheng W, Gao L, Di Virgilio L, Krasel S, Beljonne D, Tielrooij KJ, Bonn M, Wang HI. Reversible Electrical Control of Interfacial Charge Flow across van der Waals Interfaces. NANO LETTERS 2023; 23:1850-1857. [PMID: 36799492 PMCID: PMC9999450 DOI: 10.1021/acs.nanolett.2c04795] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 02/12/2023] [Indexed: 06/18/2023]
Abstract
Bond-free integration of two-dimensional (2D) materials yields van der Waals (vdW) heterostructures with exotic optical and electronic properties. Manipulating the splitting and recombination of photogenerated electron-hole pairs across the vdW interface is essential for optoelectronic applications. Previous studies have unveiled the critical role of defects in trapping photogenerated charge carriers to modulate the photoconductive gain for photodetection. However, the nature and role of defects in tuning interfacial charge carrier dynamics have remained elusive. Here, we investigate the nonequilibrium charge dynamics at the graphene-WS2 vdW interface under electrochemical gating by operando optical-pump terahertz-probe spectroscopy. We report full control over charge separation states and thus photogating field direction by electrically tuning the defect occupancy. Our results show that electron occupancy of the two in-gap states, presumably originating from sulfur vacancies, can account for the observed rich interfacial charge transfer dynamics and electrically tunable photogating fields, providing microscopic insights for optimizing optoelectronic devices.
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Affiliation(s)
- Shuai Fu
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Xiaoyu Jia
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Aliaa S. Hassan
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Heng Zhang
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Wenhao Zheng
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Lei Gao
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
- School
of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
| | - Lucia Di Virgilio
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Sven Krasel
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - David Beljonne
- Laboratory
for Chemistry of Novel Materials, Université
de Mons, 20 Place du
Parc, 7000 Mons, Belgium
| | - Klaas-Jan Tielrooij
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), BIST & CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Mischa Bonn
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Hai I. Wang
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
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50
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Grundmann A, Beckmann Y, Ghiami A, Bui M, Kardynal B, Patterer L, Schneider J, Kümmell T, Bacher G, Heuken M, Kalisch H, Vescan A. Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe 2monolayers. NANOTECHNOLOGY 2023; 34:205602. [PMID: 36745916 DOI: 10.1088/1361-6528/acb947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of TMDC have been successfully deposited by MOCVD (metal-organic chemical vapor deposition), which is a wafer-scale deposition technique with excellent uniformity and controllability. However, so far there are no findings on the extent to which the incorporation of defects can be controlled by growth parameters during MOCVD processes of TMDC. In this work, we investigate the effect of growth temperature and precursor ratio during MOCVD of tungsten diselenide (WSe2) on the growth of ML domains and their impact on the density of defects. The aim is to find parameter windows that enable the deposition of WSe2ML with high crystal quality, i.e. a low density of defects. Our findings confirm that the growth temperature has a large influence on the crystal quality of TMDC, significantly stronger than found for the W to Se precursor ratio. Raising the growth temperatures in the range of 688 °C to 791 °C leads to an increase of the number of defects, dominating photoluminescence (PL) at low temperatures (5.6 K). In contrast, an increase of the molar precursor ratio (DiPSe/WCO) from 1000 up to 100 000 leads to less defect-related PL at low temperatures.
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Affiliation(s)
- Annika Grundmann
- Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany
| | - Yannick Beckmann
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, D-47057 Duisburg, Germany
| | - Amir Ghiami
- Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany
| | - Minh Bui
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, D-52074 Aachen, Germany
| | - Beata Kardynal
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, D-52074 Aachen, Germany
| | - Lena Patterer
- Materials Chemistry, RWTH Aachen University, D-52074 Aachen, Germany
| | - Jochen Schneider
- Materials Chemistry, RWTH Aachen University, D-52074 Aachen, Germany
| | - Tilmar Kümmell
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, D-47057 Duisburg, Germany
| | - Gerd Bacher
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, D-47057 Duisburg, Germany
| | - Michael Heuken
- Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany
- AIXTRON SE, D-52134 Herzogenrath, Germany
| | - Holger Kalisch
- Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany
| | - Andrei Vescan
- Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany
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