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Zhu Y, Shi Z, Zhao Y, Bu S, Hu Z, Liao J, Lu Q, Zhou C, Guo B, Shang M, Li F, Xu Z, Zhang J, Xie Q, Li C, Sun P, Mao B, Zhang X, Liu Z, Lin L. Recent trends in the transfer of graphene films. Nanoscale 2024; 16:7862-7873. [PMID: 38568087 DOI: 10.1039/d3nr05626k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Recent years have witnessed advances in chemical vapor deposition growth of graphene films on metal foils with fine scalability and thickness controllability. However, challenges for obtaining wrinkle-free, defect-free and large-area uniformity remain to be tackled. In addition, the real commercial applications of graphene films still require industrially compatible transfer techniques with reliable performance of transferred graphene, excellent production capacity, and suitable cost. Transferred graphene films, particularly with a large area, still suffer from the presence of transfer-related cracks, wrinkles and contaminants, which would strongly deteriorate the quality and uniformity of transferred graphene films. Potential applications of graphene films include moisture barrier films, transparent conductive films, electromagnetic shielding films, and optical communications; such applications call different requirements for the performance of transferred graphene, which, in turn, determine the suitable transfer techniques. Besides the reliable transfer process, automatic machines should be well developed for the future batch transfer of graphene films, ensuring the repeatability and scalability. This mini-review provides a summary of recent advances in the transfer of graphene films and offers a perspective for future directions of transfer techniques that are compatible for industrial batch transfer.
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Affiliation(s)
- Yaqi Zhu
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Zhuofeng Shi
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Yixuan Zhao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
| | - Zhaoning Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Junhao Liao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qi Lu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, P. R. China
| | - Chaofan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Bingbing Guo
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Mingpeng Shang
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Fangfang Li
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Zhiying Xu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Jialin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Qin Xie
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Chunhu Li
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Pengzhan Sun
- Institute of Applied Physics and Materials, Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, P.R. China
| | - Boyang Mao
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, U.K
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
| | - Zhongfan Liu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
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2
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Kim G, Jeong DW, Lee G, Lee S, Ma KY, Hwang H, Jang S, Hong J, Pak S, Cha S, Cho D, Kim S, Lim J, Lee YW, Shin HS, Jang AR, Lee JO. Unusual Raman Enhancement Effect of Ultrathin Copper Sulfide. Small 2024; 20:e2306819. [PMID: 38152985 DOI: 10.1002/smll.202306819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 11/26/2023] [Indexed: 12/29/2023]
Abstract
In surface-enhanced Raman spectroscopy (SERS), 2D materials are explored as substrates owing to their chemical stability and reproducibility. However, they exhibit lower enhancement factors (EFs) compared to noble metal-based SERS substrates. This study demonstrates the application of ultrathin covellite copper sulfide (CuS) as a cost-effective SERS substrate with a high EF value of 7.2 × 104 . The CuS substrate is readily synthesized by sulfurizing a Cu thin film at room temperature, exhibiting a Raman signal enhancement comparable to that of an Au noble metal substrate of similar thickness. Furthermore, computational simulations using the density functional theory are employed and time-resolved photoluminescence measurements are performed to investigate the enhancement mechanisms. The results indicate that polar covalent bonds (Cu─S) and strong interlayer interactions in the ultrathin CuS substrate increase the probability of charge transfer between the analyte molecules and the CuS surface, thereby producing enhanced SERS signals. The CuS SERS substrate demonstrates the selective detection of various dye molecules, including rhodamine 6G, methylene blue, and safranine O. Furthermore, the simplicity of CuS synthesis facilitates large-scale production of SERS substrates with high spatial uniformity, exhibiting a signal variation of less than 5% on a 4-inch wafer.
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Affiliation(s)
- Gwangwoo Kim
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Engineering Chemistry, Chungbuk National University, Chungdae-ro 1, Cheongju, 28644, Republic of Korea
| | - Du Won Jeong
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Geonhee Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Suok Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Kyung Yeol Ma
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Hyuntae Hwang
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Seunghun Jang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - John Hong
- School of Materials Science and Engineering, Kookmin University, Jeongneung-ro 77, Seoul, 02707, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Donghwi Cho
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Sunkyu Kim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Jongchul Lim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Young-Woo Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Hyeon Suk Shin
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan-daero 1223-24, Cheonan, 31080, Republic of Korea
| | - Jeong-O Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
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3
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Yuan G, Liu W, Huang X, Wan Z, Wang C, Yao B, Sun W, Zheng H, Yang K, Zhou Z, Nie Y, Xu J, Gao L. Stacking transfer of wafer-scale graphene-based van der Waals superlattices. Nat Commun 2023; 14:5457. [PMID: 37674029 PMCID: PMC10482836 DOI: 10.1038/s41467-023-41296-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 08/29/2023] [Indexed: 09/08/2023] Open
Abstract
High-quality graphene-based van der Waals superlattices are crucial for investigating physical properties and developing functional devices. However, achieving homogeneous wafer-scale graphene-based superlattices with controlled twist angles is challenging. Here, we present a flat-to-flat transfer method for fabricating wafer-scale graphene and graphene-based superlattices. The aqueous solution between graphene and substrate is removed by a two-step spinning-assisted dehydration procedure with the optimal wetting angle. Proton-assisted treatment is further used to clean graphene surfaces and interfaces, which also decouples graphene and neutralizes the doping levels. Twist angles between different layers are accurately controlled by adjusting the macroscopic stacking angle through their wafer flats. Transferred films exhibit minimal defects, homogeneous morphology, and uniform electrical properties over wafer scale. Even at room temperature, robust quantum Hall effects are observed in graphene films with centimetre-scale linewidth. Our stacking transfer method can facilitate the fabrication of graphene-based van der Waals superlattices and accelerate functional device applications.
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Affiliation(s)
- Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zihao Wan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bing Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hang Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Kehan Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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4
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Zhang J, Liu X, Zhang M, Zhang R, Ta HQ, Sun J, Wang W, Zhu W, Fang T, Jia K, Sun X, Zhang X, Zhu Y, Shao J, Liu Y, Gao X, Yang Q, Sun L, Li Q, Liang F, Chen H, Zheng L, Wang F, Yin W, Wei X, Yin J, Gemming T, Rummeli MH, Liu H, Peng H, Lin L, Liu Z. Fast synthesis of large-area bilayer graphene film on Cu. Nat Commun 2023; 14:3199. [PMID: 37268632 DOI: 10.1038/s41467-023-38877-9] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 05/19/2023] [Indexed: 06/04/2023] Open
Abstract
Bilayer graphene (BLG) is intriguing for its unique properties and potential applications in electronics, photonics, and mechanics. However, the chemical vapor deposition synthesis of large-area high-quality bilayer graphene on Cu is suffering from a low growth rate and limited bilayer coverage. Herein, we demonstrate the fast synthesis of meter-sized bilayer graphene film on commercial polycrystalline Cu foils by introducing trace CO2 during high-temperature growth. Continuous bilayer graphene with a high ratio of AB-stacking structure can be obtained within 20 min, which exhibits enhanced mechanical strength, uniform transmittance, and low sheet resistance in large area. Moreover, 96 and 100% AB-stacking structures were achieved in bilayer graphene grown on single-crystal Cu(111) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively. The AB-stacking bilayer graphene exhibits tunable bandgap and performs well in photodetection. This work provides important insights into the growth mechanism and the mass production of large-area high-quality BLG on Cu.
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Affiliation(s)
- Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Xiaoting Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Mengqi Zhang
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- School of Material Science and Engineering, Tianjin Key Laboratory of Advanced Fibers and Energy Storage, State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, 300387, Tianjin, P. R. China
| | - Rui Zhang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Huy Q Ta
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171, Dresden, Germany
| | - Jianbo Sun
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Wendong Wang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Wenqing Zhu
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Tiantian Fang
- CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Xiucai Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Xintong Zhang
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Jiaxin Shao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Yuchen Liu
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Qian Yang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Qin Li
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Fushun Liang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Heng Chen
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Liming Zheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Fuyi Wang
- Beijing National Laboratory for Molecular Sciences, National Centre for Mass Spectrometry in Beijing, CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Wanjian Yin
- Soochow Institute for Energy and Materials Innovations, Soochow University, 215006, Suzhou, P. R. China
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171, Dresden, Germany
| | - Mark H Rummeli
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171, Dresden, Germany
- Soochow Institute for Energy and Materials Innovations, Soochow University, 215006, Suzhou, P. R. China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Skłodowskiej 34, Zabrze, 41-819, Poland
- Institute of Environmental Technology, VŠB -Technical University of Ostrava, 17 Listopadu 15, Ostrava, 708 33, Czech Republic
| | - Haihui Liu
- School of Material Science and Engineering, Tianjin Key Laboratory of Advanced Fibers and Energy Storage, State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, 300387, Tianjin, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
| | - Li Lin
- School of Materials Science and Engineering, Peking University, 100871, Beijing, P. R. China.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
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5
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Yu Y, Zhao Y, Li S, Zhao C, Liu W, Wang S, Ding F, Zhang J. Determine the Complete Configuration of Single-Walled Carbon Nanotubes by One Photograph of Transmission Electron Microscopy. Adv Sci (Weinh) 2023; 10:e2206403. [PMID: 36965155 DOI: 10.1002/advs.202206403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 02/05/2023] [Indexed: 05/27/2023]
Abstract
Developing a convenient method to determine the complete structure of single-walled carbon nanotubes (SWNTs) is important to achieve the fully controlled growth of this nanomaterial. However, approaches that can identify handedness at the atomic level with simple equipment, operation, and data analysis are still lacking. Here, the SWNTs/graphene (Gr) vertical heterostructures are artificially constructed with aligned interfaces to realize the lattice interpretation of SWNT upper and lower walls separately by only one transmission electron microscopy image, thus transforming the 3D handedness information to projected 2D space. Gr displays prominent out-of-plane deformation at the interface, promoting the energetic advantage for the aligned interface construction. The interfacial alignment between the SWNT and Gr shows no obvious dependence on either the helical angle or diameter of SWNTs. The half-wrapping of SWNTs by deformed Gr also triggers diversified alterations in electronic structures based on theoretical calculations. 27 specimens with SWNTs prepared by two disparate methods are examined, implying equal handedness distribution in the randomly aligned SWNTs grown on quartz and potential handedness enrichment in horizontal SWNT arrays grown on a-sapphire. This work provides a simple strategy for chiral discrimination and lays a characterization foundation for handedness-selective growth of nanomaterials.
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Affiliation(s)
- Yue Yu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yifan Zhao
- School of Materials Science and Engineering, Ulsan, National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Shouheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, P. R. China
| | - Chao Zhao
- School of Materials Science and Engineering, Ulsan, National Institute of Science and Technology, Ulsan, 44919, South Korea
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Blvd, Shenzhen, 518055, P. R. China
| | - Weiming Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shanshan Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, P. R. China
| | - Feng Ding
- School of Materials Science and Engineering, Ulsan, National Institute of Science and Technology, Ulsan, 44919, South Korea
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Blvd, Shenzhen, 518055, P. R. China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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6
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Liu C, Li Z, Qiao R, Wang Q, Zhang Z, Liu F, Zhou Z, Shang N, Fang H, Wang M, Liu Z, Feng Z, Cheng Y, Wu H, Gong D, Liu S, Zhang Z, Zou D, Fu Y, He J, Hong H, Wu M, Gao P, Tan PH, Wang X, Yu D, Wang E, Wang ZJ, Liu K. Designed growth of large bilayer graphene with arbitrary twist angles. Nat Mater 2022; 21:1263-1268. [PMID: 36109673 DOI: 10.1038/s41563-022-01361-8] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Accepted: 08/10/2022] [Indexed: 06/15/2023]
Abstract
The production of large-area twisted bilayer graphene (TBG) with controllable angles is a prerequisite for proceeding with its massive applications. However, most of the prevailing strategies to fabricate twisted bilayers face great challenges, where the transfer methods are easily stuck by interfacial contamination, and direct growth methods lack the flexibility in twist-angle design. Here we develop an effective strategy to grow centimetre-scale TBG with arbitrary twist angles (accuracy, <1.0°). The success in accurate angle control is realized by an angle replication from two prerotated single-crystal Cu(111) foils to form a Cu/TBG/Cu sandwich structure, from which the TBG can be isolated by a custom-developed equipotential surface etching process. The accuracy and consistency of the twist angles are unambiguously illustrated by comprehensive characterization techniques, namely, optical spectroscopy, electron microscopy, photoemission spectroscopy and photocurrent spectroscopy. Our work opens an accessible avenue for the designed growth of large-scale two-dimensional twisted bilayers and thus lays the material foundation for the future applications of twistronics at the integration level.
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Affiliation(s)
- Can Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Department of Physics, Renmin University of China, Beijing, China.
| | - Zehui Li
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Ruixi Qiao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Fang Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Ziqi Zhou
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Nianze Shang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Hongwei Fang
- ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, Shanghai Tech University, Shanghai, China
| | - Meixiao Wang
- ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, Shanghai Tech University, Shanghai, China
| | - Zhongkai Liu
- ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, Shanghai Tech University, Shanghai, China
| | - Zuo Feng
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Yang Cheng
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
| | - Dewei Gong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Song Liu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Zhensheng Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Dingxin Zou
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Ying Fu
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Enge Wang
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- School of Physics, Liaoning University, Shenyang, China
| | - Zhu-Jun Wang
- ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, Shanghai Tech University, Shanghai, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
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7
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Pant D, Pati R. Phase transition from a nonmagnetic to a ferromagnetic state in a twisted bilayer graphene nanoflake: the role of electronic pressure on the magic-twist. Nanoscale 2022; 14:11945-11952. [PMID: 35929996 DOI: 10.1039/d2nr02476d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The electronic properties of a bilayer graphene nanoflake (BLGNF) depend sensitively upon the strength of the inter-layer electronic coupling (IEC) energy. Upon tuning the IEC via changing the twist angle between the layer, a ferromagnetic gap state emerges in a BLGNF due to spontaneous symmetry breaking at the magic-twist. Herein, using first-principles density functional theory, we demonstrate the magic twist angle (θM) in a bilayer graphene nanoflake at which the transition from a nonmagnetic to a ferromagnetic phase occurs can be tuned by exerting uniaxial electronic pressure (Pe). Electronic pressure, which provides another route to control the IEC, is simulated by varying the interlayer spacing in the nanoflake. Our result shows a Pe of 0.125 GPa corresponding to interlayer spacing (h) of 3.58 Å yielding a magic twist angle of ∼1° and a negative value of Pe (-0.042 GPa) at h = 3.38 Å producing a θM of ∼2.4°. The higher value of θM at a negative Pe (smaller h) is attributed to an increase in the energy gap due to strong inter-layer electronic coupling energy in the nanoflake under uniaxial compression. This finding in the nanoflake agrees with the experimental observation in two-dimensional bilayer graphene (M. Yankowitz, S. Chen, H. Polshyn, Y. Zhang, K. Watanabe, T. Taniguchi, D. Graf, A. F. Young and C. R. Dean, Science, 2019, 363, 1059-1064) that indicated an increase in the magic angle value for the phase transition upon application of hydrostatic pressure.
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Affiliation(s)
- Dharmendra Pant
- Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
| | - Ranjit Pati
- Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
- Henes Center for Quantum Phenomena, Michigan Technological University, Houghton, Michigan 49931, USA
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8
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Xu X, Guo T, Kim H, Hota MK, Alsaadi RS, Lanza M, Zhang X, Alshareef HN. Growth of 2D Materials at the Wafer Scale. Adv Mater 2022; 34:e2108258. [PMID: 34860446 DOI: 10.1002/adma.202108258] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/29/2021] [Indexed: 06/13/2023]
Abstract
Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hyunho Kim
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Rajeh S Alsaadi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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9
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Xu X, Smajic J, Li KH, Min JW, Lei Y, Davaasuren B, He X, Zhang X, Ooi BS, Costa PMFJ, Alshareef HN. Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films. Adv Mater 2022; 34:e2105190. [PMID: 34761821 DOI: 10.1002/adma.202105190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 10/30/2021] [Indexed: 06/13/2023]
Abstract
The ability to control lattice orientation is often an essential requirement in the growth of both 2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal phenomenon termed "lattice orientation heredity" (LOH) is reported. LOH enables product films (including 2D-layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. The process universality is demonstrated by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO2 , ZnO, and In2 O3 thin films. Their resultant compounds all inherit the mono-oriented crystal feature from their precursor oxides, including 2D vdW-layered semiconductors (e.g., MoS2 ), metallic films (e.g., MXene-like Mo2 C and MoN), wide-bandgap semiconductors (e.g., hexagonal ZnS), and ferroelectric semiconductors (e.g., In2 S3 ). Using LOH-grown MoN as a seeding layer, mono-oriented GaN is achieved on an amorphous quartz substrate. The LOH process presents a universal strategy capable of growing epitaxial thin films (including 2D vdW-layered materials) not only on single-crystalline but also on noncrystalline substrates.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jasmin Smajic
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Kuang-Hui Li
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jung-Wook Min
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yongjiu Lei
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Bambar Davaasuren
- Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Boon S Ooi
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Pedro M F J Costa
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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10
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Jiang B, Wang S, Sun J, Liu Z. Controllable Synthesis of Wafer-Scale Graphene Films: Challenges, Status, and Perspectives. Small 2021; 17:e2008017. [PMID: 34106524 DOI: 10.1002/smll.202008017] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 02/22/2021] [Indexed: 06/12/2023]
Abstract
The availability of high-quality, large-scale, and single-crystal wafer-scale graphene films is fundamental for key device applications in the field of electronics, optics, and sensors. Synthesis determines the future: unleashing the full potentials of such emerging materials relies heavily upon their tailored synthesis in a scalable fashion, which is by no means an easy task to date. This review covers the state-of-the-art progress in the synthesis of wafer-scale graphene films by virtue of chemical vapor deposition (CVD), with a focus on main challenges and present status. Particularly, prevailing synthetic strategies are highlighted on a basis of the discussion in the reaction kinetics and gas-phase dynamics during CVD process. Perspectives with respect to key opportunities and promising research directions are proposed to guide the future development of wafer-scale graphene films.
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Affiliation(s)
- Bei Jiang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
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11
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Li J, Wang S, Jiang Q, Qian H, Hu S, Kang H, Chen C, Zhan X, Yu A, Zhao S, Zhang Y, Chen Z, Sui Y, Qiao S, Yu G, Peng S, Jin Z, Liu X. Single-Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates. Small 2021; 17:e2100743. [PMID: 34145739 DOI: 10.1002/smll.202100743] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 03/11/2021] [Indexed: 06/12/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2 ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoji Qian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shike Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - He Kang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyi Zhan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Aobo Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Songang Peng
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhi Jin
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinyu Liu
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
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12
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Sun L, Wang Z, Wang Y, Zhao L, Li Y, Chen B, Huang S, Zhang S, Wang W, Pei D, Fang H, Zhong S, Liu H, Zhang J, Tong L, Chen Y, Li Z, Rümmeli MH, Novoselov KS, Peng H, Lin L, Liu Z. Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles. Nat Commun 2021; 12:2391. [PMID: 33888688 PMCID: PMC8062483 DOI: 10.1038/s41467-021-22533-1] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2020] [Accepted: 03/17/2021] [Indexed: 11/09/2022] Open
Abstract
Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V-1 s-1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.
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Affiliation(s)
- Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Zihao Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Shenghong Huang
- Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230026, People's Republic of China.
| | - Shishu Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Ding Pei
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Hongwei Fang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Shan Zhong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Yulin Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Kostya S Novoselov
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
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13
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14
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Li Y, Sun L, Liu H, Wang Y, Liu Z. Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials. Inorg Chem Front 2021. [DOI: 10.1039/d0qi00923g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.
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Affiliation(s)
- Yanglizhi Li
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Luzhao Sun
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Haiyang Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Yuechen Wang
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Zhongfan Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
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15
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Nguyen VL, Duong DL, Lee SH, Avila J, Han G, Kim YM, Asensio MC, Jeong SY, Lee YH. Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation. Nat Nanotechnol 2020; 15:861-867. [PMID: 32719494 DOI: 10.1038/s41565-020-0743-0] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 06/24/2020] [Indexed: 06/11/2023]
Abstract
Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH4 concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials.
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Affiliation(s)
- Van Luan Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Inorganic Materials Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Sang Hyub Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - José Avila
- Synchrotron SOLEIL, Université Paris-Saclay, L'Orme des Merisiers Saint-Aubin, Gif sur Yvette, France
| | - Gyeongtak Han
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Maria C Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Cantoblanco, Madrid, Spain.
- MATINÉE: CSIC Associated Unit (ICMM-ICMUV Valencia University), Cantoblanco, Madrid, Spain.
| | - Se-Young Jeong
- Department of Cogno-mechatronics Engineering, Department of Optics and Mechatronics Engineering, Pusan National University, Busan, Republic of Korea.
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea.
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea.
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16
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Deng B, Hou Y, Liu Y, Khodkov T, Goossens S, Tang J, Wang Y, Yan R, Du Y, Koppens FHL, Wei X, Zhang Z, Liu Z, Peng H. Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties. Nano Lett 2020; 20:6798-6806. [PMID: 32787178 DOI: 10.1021/acs.nanolett.0c02785] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene grown on Cu by chemical vapor deposition is rough due to the surface roughening of Cu for releasing interfacial thermal stress and/or graphene bending energy. The roughness degrades the electrical conductance and mechanical strength of graphene. Here, by using vicinal Cu(111) and flat Cu(111) as model substrates, we investigated the critical role of original surface topography on the surface deformation of Cu covered by graphene. We demonstrated that terrace steps on vicinal Cu(111) dominate the formation of step bunches (SBs). Atomically flat graphene with roughness down to 0.2 nm was grown on flat Cu(111) films. When SB-induced ripples were avoided, as-grown ultraflat graphene maintained its flat feature after transfer. The ultraflat graphene exhibited extraordinary mechanical properties with Young's modulus ≈ 940 GPa and strength ≈ 117 GPa, comparable to mechanical exfoliated ones. Molecular dynamics simulation revealed the mechanism of softened elastic response and weakened strength of graphene with rippled structures.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yuan Hou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230027, China
| | - Ying Liu
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Tymofiy Khodkov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Stijin Goossens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Rui Yan
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Yin Du
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Frank H L Koppens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
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17
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Hou Y, Ren X, Fan J, Wang G, Dai Z, Jin C, Wang W, Zhu Y, Zhang S, Liu L, Zhang Z. Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method. ACS Appl Mater Interfaces 2020; 12:40958-40967. [PMID: 32805838 DOI: 10.1021/acsami.0c12000] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Assembling monolayers into a bilayer system unlocks the rotational free degree of van der Waals (vdW) homo/heterostructure, enabling the building of twisted bilayer graphene (tBLG) which possesses novel electronic, optical, and mechanical properties. Previous methods for preparation of homo/heterstructures inevitably leave the polymer residue or hexagonal boron nitride (h-BN) mask, which usually obstructs the measurement of intrinsic mechanical and surface properties of tBLG. Undoubtedly, to fabricate the designable tBLG with clean interface and surface is necessary but challenging. Here, we propose a simple and handy method to prepare atomically clean twisted bilayer graphene with controllable twist angles based on wetting-induced delamination. This method can transfer tBLG onto a patterned substrate, which offers an excellent platform for the observation of physical phenomena such as relaxation of moiré pattern in marginally tBLG. These findings and insight should ultimately guide the designable packaging and atomic characterization of the two-dimensional (2D) materials.
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Affiliation(s)
- Yuan Hou
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Xibiao Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P. R. China
| | - Jingcun Fan
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, P. R. China
| | - Guorui Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Zhaohe Dai
- Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P. R. China
| | - Wenxiang Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Yinbo Zhu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, P. R. China
| | - Shuai Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, P. R. China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Zhong Zhang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
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18
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Abstract
Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.
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Affiliation(s)
- Wenqian Yao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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19
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Haidari MM, Kim H, Kim JH, Park M, Lee H, Choi JS. Doping effect in graphene-graphene oxide interlayer. Sci Rep 2020; 10:8258. [PMID: 32427899 DOI: 10.1038/s41598-020-65263-y] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2020] [Accepted: 04/24/2020] [Indexed: 11/08/2022] Open
Abstract
Interlayer coupling in graphene-based van der Waals (vdW) heterostructures plays a key role in determining and modulating their physical properties. Hence, its influence on the optical and electronic properties cannot be overlooked in order to promote various next-generation applications in electronic and opto-electronic devices based on the low-dimensional materials. Herein, the optical and electrical properties of the vertically stacked large area heterostructure of the monolayer graphene transferred onto a monolayer graphene oxide film are investigated. An effective and stable p-doping property of this structure is shown by comparison to that of the graphene device fabricated on a silicon oxide substrate. Through Raman spectroscopy and density functional theory calculations of the charge transport characteristics, it is found that graphene is affected by sustainable p-doping effects induced from underneath graphene oxide even though they have weak interlayer interactions. This finding can facilitate the development of various fascinating graphene-based heterostructures and extend their practical applications in integrated devices with advanced functionalities.
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20
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Huang M, Bakharev PV, Wang ZJ, Biswal M, Yang Z, Jin S, Wang B, Park HJ, Li Y, Qu D, Kwon Y, Chen X, Lee SH, Willinger MG, Yoo WJ, Lee Z, Ruoff RS. Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil. Nat Nanotechnol 2020; 15:289-295. [PMID: 31959931 DOI: 10.1038/s41565-019-0622-8] [Citation(s) in RCA: 60] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2018] [Accepted: 12/10/2019] [Indexed: 06/10/2023]
Abstract
High-quality AB-stacked bilayer or multilayer graphene larger than a centimetre has not been reported. Here, we report the fabrication and use of single-crystal Cu/Ni(111) alloy foils with controllable concentrations of Ni for the growth of large-area, high-quality AB-stacked bilayer and ABA-stacked trilayer graphene films by chemical vapour deposition. The stacking order, coverage and uniformity of the graphene films were evaluated by Raman spectroscopy and transmission electron microscopy including selected area electron diffraction and atomic resolution imaging. Electrical transport (carrier mobility and band-gap tunability) and thermal conductivity (the bilayer graphene has a thermal conductivity value of about 2,300 W m-1 K-1) measurements indicated the superior quality of the films. The tensile loading response of centimetre-scale bilayer graphene films supported by a 260-nm thick polycarbonate film was measured and the average values of the Young's modulus (478 GPa) and fracture strength (3.31 GPa) were obtained.
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Affiliation(s)
- Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Pavel V Bakharev
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Zhu-Jun Wang
- Scientific Center for Optical and Electron Microscopy, ETH Zürich, Zürich, Switzerland
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem, Germany
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Zheng Yang
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Bin Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Hyo Ju Park
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Yunqing Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Deshun Qu
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Xianjue Chen
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Marc-Georg Willinger
- Scientific Center for Optical and Electron Microscopy, ETH Zürich, Zürich, Switzerland
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem, Germany
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- Department of Chemistry, UNIST, Ulsan, Republic of Korea.
- School of Energy and Chemical Engineering, UNIST, Ulsan, Republic of Korea.
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21
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Lim JY, Jang HS, Yoo HJ, Kim SI, Whang D. Pattern Pick and Place Method for Twisted Bi- and Multi-Layer Graphene. Materials (Basel) 2019; 12:ma12223740. [PMID: 31766213 PMCID: PMC6888300 DOI: 10.3390/ma12223740] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2019] [Revised: 11/06/2019] [Accepted: 11/11/2019] [Indexed: 11/29/2022]
Abstract
Twisted bi-layer graphene (tBLG) has attracted much attention because of its unique band structure and properties. The properties of tBLG vary with small differences in the interlayer twist angle, but it is difficult to accurately adjust the interlayer twist angle of tBLG with the conventional fabrication method. In this study, we introduce a facile tBLG fabrication method that directly picks up a single-crystalline graphene layer from a growth substrate and places it on another graphene layer with a pre-designed twist angle. Using this approach, we stacked single-crystalline graphene layers with controlled twist angles and thus fabricated tBLG and twisted multi-layer graphene (tMLG). The structural, optical and electrical properties depending on the twist angle and number of layers, were investigated using transmission electron microscopy (TEM), micro–Raman spectroscopy, and gate-dependent sheet resistance measurements. The obtained results show that the pick and place approach enables the direct dry transfer of the top graphene layer on the as-grown graphene to fabricate uniform tBLG and tMLG with minimal interlayer contamination and pre-defined twist angles.
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Affiliation(s)
- Jae-Young Lim
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
| | - Hyeon-Sik Jang
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
| | - Hyun-Jae Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
| | - Seung-il Kim
- Department of Energy Systems Research and Department of Materials Science and Engineering Ajou University, 2016, World cup-Ro, Yeongtong-Gu, Suwon-Si, Gyeonggi-Do 16499, Korea;
| | - Dongmok Whang
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
- Correspondence: ; Tel.: +82-31-290-7399
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22
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Luo D, Wang M, Li Y, Kim C, Yu KM, Kim Y, Han H, Biswal M, Huang M, Kwon Y, Goo M, Camacho-Mojica DC, Shi H, Yoo WJ, Altman MS, Shin HJ, Ruoff RS. Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil. Adv Mater 2019; 31:e1903615. [PMID: 31264306 DOI: 10.1002/adma.201903615] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Indexed: 06/09/2023]
Abstract
To date, thousands of publications have reported chemical vapor deposition growth of "single layer" graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer-free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter-long ≈100 nm wide "folds," separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi-randomly in the polycrystalline graphene film. High-performance field-effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer-free single crystal graphene film.
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Affiliation(s)
- Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Meihui Wang
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yunqing Li
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Changsik Kim
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Gyeonggi-do, 16419, Republic of Korea
| | - Ka Man Yu
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yohan Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Huijun Han
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Min Goo
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Dulce C Camacho-Mojica
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Haofei Shi
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Gyeonggi-do, 16419, Republic of Korea
| | - Michael S Altman
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Hyung-Joon Shin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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23
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Fan S, Vu QA, Lee S, Phan TL, Han G, Kim YM, Yu WJ, Lee YH. Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface. ACS Nano 2019; 13:8193-8201. [PMID: 31260265 DOI: 10.1021/acsnano.9b03342] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain homogeneity and band steepness at interfaces, exhibit promising performance for band-to-band tunneling (BTBT) devices. Esaki tunnel diodes based on vdW heterostructures, however, yield poor current density and peak-to-valley ratio, inferior to those of three-dimensional materials. Here, we report the negative differential resistance (NDR) behavior in a WSe2/SnSe2 heterostructure system at room temperature and demonstrate that heterointerface control is one of the keys to achieving high device performance by constructing WSe2/SnSe2 heterostructures in inert gas environments. While devices fabricated in ambient conditions show poor device performance due to the observed oxidation layer at the interface, devices fabricated in inert gas exhibit extremely high peak current density up to 1460 mA/mm2, 3-4 orders of magnitude higher than reported vdW heterostructure-based tunnel diodes, with a peak-to-valley ratio of more than 4 at room temperature. Besides, Pd/WSe2 contact in our device possesses a much higher Schottky barrier than previously reported Cr/WSe2 contact in the WSe2/SnSe2 device, which suppresses the thermionic emission current to less than the BTBT current level, enabling the observation of NDR at room temperature. Diode behavior can be further modulated by controlling the electrostatic doping and the tunneling barrier as well.
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Affiliation(s)
- Sidi Fan
- Center for Integrated Nanostructure Physics, Institute for Basic Science , Sungkyunkwan University , Suwon 16419 , Korea
- Department of Energy Science, Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Quoc An Vu
- Center for Integrated Nanostructure Physics, Institute for Basic Science , Sungkyunkwan University , Suwon 16419 , Korea
- Department of Energy Science, Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Sanghyub Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science , Sungkyunkwan University , Suwon 16419 , Korea
- Department of Energy Science, Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Thanh Luan Phan
- Department of Electronic and Electrical Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Gyeongtak Han
- Department of Energy Science, Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Young-Min Kim
- Department of Energy Science, Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Woo Jong Yu
- Department of Electronic and Electrical Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science , Sungkyunkwan University , Suwon 16419 , Korea
- Department of Energy Science, Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
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24
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Yang X, Zhang G, Prakash J, Chen Z, Gauthier M, Sun S. Chemical vapour deposition of graphene: layer control, the transfer process, characterisation, and related applications. INT REV PHYS CHEM 2019. [DOI: 10.1080/0144235x.2019.1634319] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
Affiliation(s)
- Xiaohua Yang
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Gaixia Zhang
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Jai Prakash
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
- Department of Chemistry, National Institute of Technology Hamirpur, Hamirpur, India
| | - Zhangsen Chen
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Marc Gauthier
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Shuhui Sun
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
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25
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Dong J, Geng D, Liu F, Ding F. Formation of Twinned Graphene Polycrystals. Angew Chem Int Ed Engl 2019; 58:7723-7727. [DOI: 10.1002/anie.201902441] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Revised: 03/20/2019] [Indexed: 11/05/2022]
Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
| | - Dechao Geng
- Pillar of Engineering Product DevelopmentSingapore University of Technology and Design Singapore 487372 Singapore
| | - Fengning Liu
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
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26
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Deng B, Xin Z, Xue R, Zhang S, Xu X, Gao J, Tang J, Qi Y, Wang Y, Zhao Y, Sun L, Wang H, Liu K, Rummeli MH, Weng LT, Luo Z, Tong L, Zhang X, Xie C, Liu Z, Peng H. Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays. Sci Bull (Beijing) 2019; 64:659-668. [PMID: 36659648 DOI: 10.1016/j.scib.2019.04.030] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Revised: 04/20/2019] [Accepted: 04/22/2019] [Indexed: 01/21/2023]
Abstract
The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on single-crystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel (Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the CuNi alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition (CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays (LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for high-performance electronics and optoelectronics that are compatible with wafer process.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Zhaowei Xin
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Ruiwen Xue
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Shishu Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xiaozhi Xu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jing Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yan Zhao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Luzhao Sun
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huihui Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Mark H Rummeli
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China; Centre of Polymer and Carbon Materials, Polish Academy of Sciences, Zabrze 41-819, Poland
| | - Lu-Tao Weng
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Lianming Tong
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xinyu Zhang
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Changsheng Xie
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
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27
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
| | - Dechao Geng
- Pillar of Engineering Product DevelopmentSingapore University of Technology and Design Singapore 487372 Singapore
| | - Fengning Liu
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
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28
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Zhang X, Wu T, Jiang Q, Wang H, Zhu H, Chen Z, Jiang R, Niu T, Li Z, Zhang Y, Qiu Z, Yu G, Li A, Qiao S, Wang H, Yu Q, Xie X. Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition. Small 2019; 15:e1805395. [PMID: 30942946 DOI: 10.1002/smll.201805395] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2018] [Revised: 02/24/2019] [Indexed: 06/09/2023]
Abstract
The future electronic application of graphene highly relies on the production of large-area high-quality single-crystal graphene. However, the growth of single-crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single-crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm2 V-1 s-1 at room temperature. This work shines light on a way toward a much lower temperature growth of high-quality graphene in single crystallinity, which could benefit future electronic applications.
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Affiliation(s)
- Xuefu Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Qi Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Hailong Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Ren Jiang
- Department of Physics, East China Normal University, Shanghai, 200241, China
| | - Tianchao Niu
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Zhuojun Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Youwei Zhang
- State Key Laboratory of ASIC and System School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhijun Qiu
- State Key Laboratory of ASIC and System School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Ang Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Qingkai Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chinese Academy of Sciences, Center for Excellence in Superconducting Electronics (CENSE), 865 Chang Ning Road, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, China
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29
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Reckinger N, Casa M, Scheerder JE, Keijers W, Paillet M, Huntzinger JR, Haye E, Felten A, Van de Vondel J, Sarno M, Henrard L, Colomer JF. Restoring self-limited growth of single-layer graphene on copper foil via backside coating. Nanoscale 2019; 11:5094-5101. [PMID: 30839973 DOI: 10.1039/c8nr09841g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that, in principle, prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foils allows for the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free furnace. We show that the absence of FLG patches is related to the suppression of carbon diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be drastically shortened.
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Affiliation(s)
- Nicolas Reckinger
- Department of Physics, University of Namur, Rue de Bruxelles 61, 5000 Namur, Belgium.
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30
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Srinivasan BM, Hao Y, Hariharaputran R, Rywkin S, Hone JC, Colombo L, Ruoff RS, Zhang YW. Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study. ACS Nano 2018; 12:9372-9380. [PMID: 30148597 DOI: 10.1021/acsnano.8b04460] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Mass production of large, high-quality single-crystalline graphene is dependent on a complex coupling of factors including substrate material, temperature, pressure, gas flow, and the concentration of carbon and hydrogen species. Recent studies have shown that the oxidation of the substrate surface such as Cu before the introduction of the C precursor, methane, results in a significant increase in the growth rate of graphene while the number of nuclei on the surface of the Cu substrate decreases. We report on a phase-field model, where we include the effects of oxygen on the number of nuclei, the energetics at the growth front, and the graphene island morphology on Cu. Our calculations reproduce the experimental observations, thus validating the proposed model. Finally, and more importantly, we present growth rate from our model as a function of O concentration and precursor flux to guide the efficient growth of large single-crystal graphene of high quality.
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Affiliation(s)
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | | | - Shanti Rywkin
- Department of Science, Borough of Manhattan Community College , The City University of New York , New York , New York 10007 , United States
| | - James C Hone
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
| | - Luigi Colombo
- Texas Instruments , Dallas , Texas 75243 , United States
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials, Institute for Basic Science , Ulsan National Institute of Science and Technology , Ulsan 689-798 , Korea
| | - Yong-Wei Zhang
- Institute of High Performance Computing , A*STAR, Singapore 138632 , Singapore
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31
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Zhu Z, Zhan L, Shih TM, Wan W, Lu J, Huang J, Guo S, Zhou Y, Cai W. Critical Annealing Temperature for Stacking Orientation of Bilayer Graphene. Small 2018; 14:e1802498. [PMID: 30160374 DOI: 10.1002/smll.201802498] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Revised: 07/26/2018] [Indexed: 06/08/2023]
Abstract
It is rarely reported that stacking orientations of bilayer graphene (BLG) can be manipulated by the annealing process. Most investigators have painstakingly fabricated this BLG by chemical vapor deposition growth or mechanical means. Here, it is discovered that, at ≈600 °C, called the critical annealing temperature (CAT), most stacking orientations collapse into strongly coupled or AB-stacked states. This phenomenon is governed (i) macroscopically by the stress generation and release in top graphene domains, evolving from mild ripples to sharp billows in certain local areas, and (ii) microscopically by the principle of minimal potential obeyed by carbon atoms that have acquired sufficient thermal energy at CAT. Conspicuously, evolutions of stacking orientations in Raman mappings under various annealing temperatures are observed. Furthermore, MoS2 synthesized on BLG is used to directly observe crystal orientations of top and bottom graphene layers. The finding of CAT provides a guide for the fabrication of strongly coupled or AB-stacked BLG, and can be applied to aligning other 2D heterostructures.
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Affiliation(s)
- Zhenwei Zhu
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
- Department of Mechanical Engineering and Materials Science, Rice University, Houston, TX, 77005, USA
| | - Linjie Zhan
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Tien-Mo Shih
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Tianming Physics Research Institute, Changtai, 363900, China
| | - Wen Wan
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Jie Lu
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Junjie Huang
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Shengshi Guo
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Yinghui Zhou
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Weiwei Cai
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
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32
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Uwanno T, Taniguchi T, Watanabe K, Nagashio K. Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors. ACS Appl Mater Interfaces 2018; 10:28780-28788. [PMID: 30080037 DOI: 10.1021/acsami.8b08959] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Bilayer graphene field effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations because of the charged impurities in high- k gate stacks because the potential difference between two layers induced by the external perpendicular electrical filed is the physical origin behind the band gap opening. The assembly of BLG with layered h-BN insulators into a van der Waals heterostructure has been widely recognized to achieve the superior electrical transport properties. However, the carrier response properties at the h-BN/BLG heterointerface, which control the device performance, have not yet been revealed because of the inevitably large parasitic capacitance. In this study, the significant reduction of potential fluctuations to ∼1 meV is achieved in an all-two-dimensional heterostructure BLG-FET on a quartz substrate, which results in the suppression of the off-current to the measurement limit at a small band gap of ∼90 meV at 20 K. By capacitance measurement, we demonstrate that the electron trap/detrap response at such heterointerface is suppressed to undetectable level in the measurement frequency range. The electrically inert van der Waals heterointerface paves the way for the realization of future BLG electronics applications.
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Affiliation(s)
- Teerayut Uwanno
- Department of Materials Engineering , The University of Tokyo , Tokyo 113-8656 , Japan
- College of Nanotechnology , King Mongkut's Institute of Technology Ladkrabang , Bangkok 10520 , Thailand
| | | | - Kenji Watanabe
- National Institute of Materials Science , Ibaraki 305-0044 , Japan
| | - Kosuke Nagashio
- Department of Materials Engineering , The University of Tokyo , Tokyo 113-8656 , Japan
- PRESTO, Japan Science and Technology Agency (JST) , Tokyo 113-8656 , Japan
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33
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Zhang J, Huang Y, Tan Z, Li T, Zhang Y, Jia K, Lin L, Sun L, Chen X, Li Z, Tan C, Zhang J, Zheng L, Wu Y, Deng B, Chen Z, Liu Z, Peng H. Low-Temperature Heteroepitaxy of 2D PbI 2 /Graphene for Large-Area Flexible Photodetectors. Adv Mater 2018; 30:e1803194. [PMID: 30015990 DOI: 10.1002/adma.201803194] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2018] [Revised: 06/14/2018] [Indexed: 06/08/2023]
Abstract
Heterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large-scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter-sized, vertically stacked heterojunction of lead iodide (PbI2 )/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI2 on graphene/PET substrate at a temperature lower than 200 °C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI2 /graphene sandwiched photodetectors, which exhibit high responsivity (45 A W-1 cm-2 ), fast response (35 µs rise, 20 µs decay), and high-resolution imaging capability (1 µm). This study may pave a facile pathway for scalable production of high-performance flexible devices.
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Affiliation(s)
- Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yucheng Huang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhenjun Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Tianran Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yichi Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Xiwen Chen
- Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Zhenzhu Li
- Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Jinxia Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Liming Zheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yue Wu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhaolong Chen
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100194, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100194, China
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34
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Gao Z, Zhang Q, Naylor CH, Kim Y, Abidi IH, Ping J, Ducos P, Zauberman J, Zhao MQ, Rappe AM, Luo Z, Ren L, Johnson ATC. Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy. ACS Nano 2018; 12:2275-2282. [PMID: 29509401 DOI: 10.1021/acsnano.7b06992] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We developed a high-yield synthesis of highly crystalline bilayer graphene (BLG) with two preferential stacking modes using a Ni-Cu gradient alloy growth substrate. Previously reported approaches for BLG growth include flat growth substrates of Cu or Ni-Cu uniform alloys and "copper pocket" structures. Use of flat substrates has the advantage of being scalable, but the growth mechanism is either "surface limited" (for Cu) or carbon precipitation (for uniform Ni-Cu), which results in multicrystalline BLG grains. For copper pockets, growth proceeds through a carbon back-diffusion mechanism, which leads to the formation of highly crystalline BLG, but scaling of the copper pocket structure is expected to be difficult. Here we demonstrate a Ni-Cu gradient alloy that combines the advantages of these earlier methods: the substrate is flat, so easy to scale, while growth proceeds by a carbon back-diffusion mechanism leading to high-yield growth of BLG with high crystallinity. The BLG layer stacking was almost exclusively Bernal or twisted with an angle of 30°, consistent with first-principles calculations we conducted. Furthermore, we demonstrated scalable production of transistor arrays based crystalline Bernal-stacked BLG with a band gap that was tunable at room temperature.
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Affiliation(s)
- Zhaoli Gao
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Qicheng Zhang
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Carl H Naylor
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Youngkuk Kim
- The Makineni Theoretical Laboratories, Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104-632 , United States
- Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Irfan Haider Abidi
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Jinglei Ping
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Pedro Ducos
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- Departamento de Física , Universidad San Francisco de Quito , Quito 170901 , Ecuador
| | - Jonathan Zauberman
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Meng-Qiang Zhao
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Andrew M Rappe
- The Makineni Theoretical Laboratories, Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104-632 , United States
| | - Zhengtang Luo
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Li Ren
- School of Materials Science and Engineering , South China University of Technology , Guangzhou 510006 , People's Republic of China
| | - Alan T Charlie Johnson
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
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35
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Cheon M, Cho Y, Park CH, Cho CR, Jeong SY. A study of the density of states of ZnCoO:H from resistivity measurements. RSC Adv 2018; 8:9895-9900. [PMID: 35540802 PMCID: PMC9078852 DOI: 10.1039/c7ra12866e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2017] [Accepted: 02/17/2018] [Indexed: 02/02/2023] Open
Abstract
Understanding the electronic band structure and density of states (DOS) of a material and their relationship to the associated electronic transport properties is the starting point for optimizing the performance of a device and its technological applications. In a hydrogenated Zn0.8Co0.2O (ZnCoO:H) film with an inverted thin-film transistor structure, we found ambipolar behavior, which is shown in many field-effect devices based on graphene, graphene nanoribbons, and organic semiconductors. In this study, to obtain information on the DOS of ZnCoO:H to explain the ambipolar behavior in terms of the carrier density and type, resistivity and magnetoresistance measurements of a ZnCoO:H film were performed at 5 K. Our proposed DOS representation of ZnCoO:H explains qualitatively the experimental observations of carrier density modulation and ambipolar behavior. First-principles calculations of the DOS of ZnCoO:H were in good agreement with the proposed DOS representation. Through a comparison of first-principles calculations and experimental data, evidence for the existence of Co–H–Co in ZnCoO:H is suggested. Ambipolar behavior in a hydrogenated Zn0.8Co0.2O (ZnCoO:H) film is investigated via resistivity and magnetoresistance measurements and first-principles calculations of the DOS. Evidence for the existence of Co–H–Co in ZnCoO:H is suggested.![]()
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Affiliation(s)
- Miyeon Cheon
- Crystal Bank Research Institute, Pusan National University Miryang 50463 Korea
| | - Yong Cho
- Korea Research Institute of Standards and Science Daejeon 34113 Korea
| | - Chul-Hong Park
- Dept. of Physics Education, Pusan National University Busan 46241 Korea
| | - Chae Ryong Cho
- Department of Nanoenergy Engineering, College of Nanoscience and Nanotechnology, Pusan National University Busan 46241 Republic of Korea
| | - Se-Young Jeong
- Dept. of Cogno-Mechatronics Engineering, Pusan National University Busan 46241 Korea +82-55-353-1314 +82-55-350-5273.,Dept. of Optics and Mechatronics Engineering, Pusan National University Miryang 50463 Korea
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36
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Kar S, Nguyen VL, Mohapatra DR, Lee YH, Sood AK. Ultrafast Spectral Photoresponse of Bilayer Graphene: Optical Pump-Terahertz Probe Spectroscopy. ACS Nano 2018; 12:1785-1792. [PMID: 29309138 DOI: 10.1021/acsnano.7b08555] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Photoinduced terahertz conductivity Δσ(ω) of Bernal stacked bilayer graphene (BLG) with different dopings is measured by time-resolved optical pump terahertz probe spectroscopy. The real part of photoconductivity Δσ(ω) (ΔσRe(ω)) is positive throughout the spectral range 0.5-2.5 THz in low-doped BLG. This is in sharp contrast to Δσ(ω) for high-doped bilayer graphene where ΔσRe(ω) is negative at low frequency and positive on the high frequency side. We use Boltzmann transport theory to understand quantitatively the frequency dependence of Δσ(ω), demanding the energy dependence of different scattering rates such as short-range impurity scattering, Coulomb scattering, carrier-acoustic phonon scattering, and substrate surface optical phonon scattering. We find that the short-range disorder scattering dominates over other processes. The calculated photoconductivity captures very well the experimental conductivity spectra as a function of lattice temperature varying from 300 to 4 K, without any empirical fitting procedures adopted so far in the literature. This helps us to understand the intraband conductivity of photoexcited hot carriers in 2D materials.
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Affiliation(s)
- Srabani Kar
- Department of Physics, Indian Institute of Science , Bangalore 560 012, India
- Center for Ultrafast Laser Applications, Indian Institute of Science , Bangalore 560 012, India
| | - Van Luan Nguyen
- Center for Intergrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Korea
| | - Dipti R Mohapatra
- Department of Physics, Indian Institute of Science , Bangalore 560 012, India
| | - Young Hee Lee
- Center for Intergrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Korea
- Department of Energy Science and Department of Physics, Sungkyunkwan University , Suwon 16419, Korea
| | - A K Sood
- Department of Physics, Indian Institute of Science , Bangalore 560 012, India
- Center for Ultrafast Laser Applications, Indian Institute of Science , Bangalore 560 012, India
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37
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Abstract
The controlled growth of graphene by the chemical vapor deposition method is vital for its various applications; however, the reproducibility remains a great challenge. Here, using single-crystal graphene growth on a Cu surface as a model system, we demonstrate that a trace amount of H2O and O2 impurity gases in the reaction chamber is key for the large fluctuation of graphene growth. By precisely controlling their parts per million level concentrations, centimeter-sized single-crystal graphene is obtained in a reliable manner with a maximum growth rate up to 190 μm min-1. The roles of oxidants are elucidated as an effective modulator for both graphene nucleation density and growth rate. This control is more fundamental for reliable growth of graphene beyond previous findings and is expected to be useful for the growth of various 2D materials that are also sensitive to trace oxidant impurities.
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Affiliation(s)
- Wei Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science , Beijing 100190, P.R. China
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology , Wuhan 430074, P.R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science , Beijing 100190, P.R. China
| | - Shuai Wang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology , Wuhan 430074, P.R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science , Beijing 100190, P.R. China
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38
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Xu X, Yi D, Wang Z, Yu J, Zhang Z, Qiao R, Sun Z, Hu Z, Gao P, Peng H, Liu Z, Yu D, Wang E, Jiang Y, Ding F, Liu K. Greatly Enhanced Anticorrosion of Cu by Commensurate Graphene Coating. Adv Mater 2018; 30:1702944. [PMID: 29266426 DOI: 10.1002/adma.201702944] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2017] [Revised: 09/02/2017] [Indexed: 06/07/2023]
Abstract
Metal corrosion is a long-lasting problem in history and ultrahigh anticorrosion is one ultimate pursuit in the metal-related industry. Graphene, in principle, can be a revolutionary material for anticorrosion due to its excellent impermeability to any molecule or ion (except for protons). However, in real applications, it is found that the metallic graphene forms an electrochemical circuit with the protected metals to accelerate the corrosion once the corrosive fluids leaks into the interface. Therefore, whether graphene can be used as an excellent anticorrosion material is under intense debate now. Here, graphene-coated Cu is employed to investigate the facet-dependent anticorrosion of metals. It is demonstrated that as-grown graphene can protect Cu(111) surface from oxidation in humid air lasting for more than 2.5 years, in sharp contrast with the accelerated oxidation of graphene-coated Cu(100) surface. Further atomic-scale characterization and ab initio calculations reveal that the strong interfacial coupling of the commensurate graphene/Cu(111) prevents H2 O diffusion into the graphene/Cu(111) interface, but the one-dimensional wrinkles formed in the incommensurate graphene on Cu(100) can facilitate the H2 O diffusion at the interface. This study resolves the contradiction on the anticorrosion capacity of graphene and opens a new opportunity for ultrahigh metal anticorrosion through commensurate graphene coating.
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Affiliation(s)
- Xiaozhi Xu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Ding Yi
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
| | - Zhichang Wang
- International Centre for Quantum Materials, Peking University, Beijing, 100871, China
| | - Jiachen Yu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Zhihong Zhang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Ruixi Qiao
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Zhanghao Sun
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Zonghai Hu
- School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Peng Gao
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Hailin Peng
- Centre for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhongfan Liu
- Centre for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Dapeng Yu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
- Department of Physics, South University of Science and Technology of China, Shenzhen, 518055, China
| | - Enge Wang
- International Centre for Quantum Materials, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Ying Jiang
- International Centre for Quantum Materials, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- International Centre for Quantum Materials, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
- Institute of Ocean Research, Peking University, Beijing, 100871, China
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39
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Deng B, Pang Z, Chen S, Li X, Meng C, Li J, Liu M, Wu J, Qi Y, Dang W, Yang H, Zhang Y, Zhang J, Kang N, Xu H, Fu Q, Qiu X, Gao P, Wei Y, Liu Z, Peng H. Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates. ACS Nano 2017; 11:12337-12345. [PMID: 29191004 DOI: 10.1021/acsnano.7b06196] [Citation(s) in RCA: 82] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Zhenqian Pang
- LNM, Institute of Mechanics, Chinese Academy of Sciences , Beijing 100190, China
| | - Shulin Chen
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, China
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology , Harbin 150001, China
| | - Xin Li
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Caixia Meng
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences , Dalian 116023, China
| | - Jiayu Li
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, China
| | - Mengxi Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China
| | - Juanxia Wu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, China
| | - Wenhui Dang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Hao Yang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Jin Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Ning Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Hongqi Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Qiang Fu
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences , Dalian 116023, China
| | - Xiaohui Qiu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China
| | - Peng Gao
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871, China
| | - Yujie Wei
- LNM, Institute of Mechanics, Chinese Academy of Sciences , Beijing 100190, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
- Beijing Graphene Institute (BGI) , Beijing 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
- Beijing Graphene Institute (BGI) , Beijing 100094, China
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40
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Xu X, Zhang Z, Dong J, Yi D, Niu J, Wu M, Lin L, Yin R, Li M, Zhou J, Wang S, Sun J, Duan X, Gao P, Jiang Y, Wu X, Peng H, Ruoff RS, Liu Z, Yu D, Wang E, Ding F, Liu K. Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil. Sci Bull (Beijing) 2017; 62:1074-80. [PMID: 36659334 DOI: 10.1016/j.scib.2017.07.005] [Citation(s) in RCA: 199] [Impact Index Per Article: 28.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2017] [Revised: 07/09/2017] [Accepted: 07/09/2017] [Indexed: 01/21/2023]
Abstract
A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene film of (5×50)cm2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(111) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(111) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000cm2V-1s-1 at 4K and room temperature sheet resistance of ∼230Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.
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Wang B, Huang M, Kim NY, Cunning BV, Huang Y, Qu D, Chen X, Jin S, Biswal M, Zhang X, Lee SH, Lim H, Yoo WJ, Lee Z, Ruoff RS. Controlled Folding of Single Crystal Graphene. Nano Lett 2017; 17:1467-1473. [PMID: 28218542 DOI: 10.1021/acs.nanolett.6b04459] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Folded graphene in which two layers are stacked with a twist angle between them has been predicted to exhibit unique electronic, thermal, and magnetic properties. We report the folding of a single crystal monolayer graphene film grown on a Cu(111) substrate by using a tailored substrate having a hydrophobic region and a hydrophilic region. Controlled film delamination from the hydrophilic region was used to prepare macroscopic folded graphene with good uniformity on the millimeter scale. This process was used to create many folded sheets each with a defined twist angle between the two sheets. By identifying the original lattice orientation of the monolayer graphene on Cu foil, or establishing the relation between the fold angle and twist angle, this folding technique allows for the preparation of twisted bilayer graphene films with defined stacking orientations and may also be extended to create folded structures of other two-dimensional nanomaterials.
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Affiliation(s)
- Bin Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
| | - Na Yeon Kim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
| | - Benjamin V Cunning
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Yuan Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Deshun Qu
- SKKU Advanced Institute of Nano-Technology (SAINT), Department of Nano Science and Technology, Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Xianjue Chen
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Xu Zhang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Hyunseob Lim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology (SAINT), Department of Nano Science and Technology, Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
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