Volume-Confined Fabrication of Large-Scale Single-Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials

With outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next-generation wearable electronics and flexible devices in the film form. However, it remains a challenge to grow high-quality thin films of molecular ferroelectrics. To address the above issue, a volume-confined method is utilized to achieve ultrasmooth single-crystal molecular ferroelectric thin films at the sub-centimeter scale, with the thickness controlled in the range of 100-1000 nm. More importantly, the preparation method is applicable to most molecular ferroelectrics and has no dependency on substrates, showing excellent reproducibility and universality. To demonstrate the application potential, two-dimensional (2D) transitional metal dichalcogenide semiconductor/molecular ferroelectric heterostructures are prepared and investigated by optical spectroscopic method, proving the possibility of integrating molecular ferroelectrics with 2D layered materials. These results may unlock the potential for preparing and developing high-performance devices based on molecular ferroelectric thin films.

Progressively Oriented Attachment-Enabled Ultralong Single-Crystalline Upconversion Nanowires for Multidirectional Strain Sensing

Fabricating one-dimensional (1D) single-crystalline nanostructures with the necessary characteristics for interconnects and functional units in nanodevices poses a major challenge. Traditional solution-based synthesis methods, driven by oriented attachment mechanisms, have limited the growth of either ultrathin crystalline nanowires or short rod-like nanocrystals due to stringent orientation requirements. The construction of single-crystalline ultralong nanowires with both an elongated length and moderate thickness has remained elusive. Here we introduce a growth mechanism based on progressively oriented attachment that enables the attachment of larger crystals while preserving the alignment of the crystal lattice. Using this mechanism, we achieve 1D single-crystalline lanthanide-doped nanowires (K₂YF₅:Yb/Er) with lengths up to 9 μm and a moderate thickness of approximately 20 nm. These nanowires can be integrated into a flexible film that exhibits stretching-dependent upconverted luminescence behavior. The mechanical toughness and elongated morphology of the nanowires facilitate the development of a wearable device dedicated to multidirectional strain sensing with high responsivity and excellent stability, withstanding repeated stretching and releasing for up to 1000 cycles.

Single Crystalline Transparent Conducting F, Al, and Ga Co-Doped ZnO Thin Films with High Photoelectrical Performance

Transparent conductive film (TCF) is a material that integrates electrical conductivity and optical transparency. It is widely used as an electrode material in thin-film solar cells. However, considerable progress is needed to facilitate its high performance and low-cost preparation. In this study, a preparation scheme for AlF₃ and GaF₃ co-doped ZnO (FAGZO) thin films was designed and implemented by magnetron sputtering (MS). The mutual restraint between the electrical properties and the wide-spectrum transmission performance of ZnO films was resolved. First-principles calculations showed that the doped ZnO system had n-type conductivity and that the most stable structure was the F_O-Al_Zn-Ga_Zn system. The experimental results verified the theoretical predictions. Single crystalline ZnO transparent conducting films (ZnO-TCFs) of high quality were achieved by MS. After rapid thermal annealing (RTA) treatment, the mobility reached 49.6 cm²/V s, and the resistivity decreased to 3.82 × 10^-4 Ω cm. The AT was 90% between 380 and 1200 nm. Furthermore, the application of the prepared FAGZO film in perovskite solar cells (PSCs) has been verified. Compared to the reference indium tin oxide film, the PSCs using the FAGZO film showed higher J_SC and power conversion efficiency. These results demonstrate that MS combined with anion and cation co-doping provides an effective means of exploring high-quality and high-performance ZnO-TCFs.

VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching

The strongly correlated electron material, vanadium dioxide (VO2), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V2O5(010) single crystal results in Wadsley phases (VnO2n+1, n > 1) and VO2. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO2. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO2 devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V2O5, VO2 and V6O13 crystallites. Percolation paths incorporating both VO2 and metallic V6O13 are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching.

Pattern-Selective Molecular Epitaxial Growth of Single-Crystalline Perovskite Arrays toward Ultrasensitive and Ultrafast Photodetector

The emergence of organic-inorganic perovskite has provided great flexibility for creating optoelectronic devices with unprecedented performance or unique functionality. However, the perovskite films explored so far have been difficult to be patterned to arrays owing to their poor solvent and moisture stability, which usually lead to serious structural damage of perovskites. The successful preparation of perovskite microarrays with uniform shape and size is more challenging. Here we report a straightforward approach to realize single-crystalline perovskite arrays through a relatively simple pattern-selective molecular epitaxial growth. This approach is applied to create diverse shaped perovskite arrays, such as hexagon, triangle, circle, square, and rectangle. A vertically aligned perovskite photodetector displays both an ultrasensitive and ultrafast photoresponse arising from the reduction in carrier diffusion paths and the high optical absorption. This work demonstrates a general approach to creating perovskite arrays with uniform shape, size, and morphology and provides a rich platform for producing high-performance photodetectors and photovoltage devices.

Growth of 2D Materials at the Wafer Scale

Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.

Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature

The growth of hetero-epitaxial ZnO-AlN core-shell nanowires (NWs) and single crystalline AlN films on non-polar ZnO substrate at temperature of 380 °C by atomic layer deposition (ALD) was investigated. Structural characterization shows that the AlN shells have excellent single-crystal properties. The epitaxial relationship of [0002]_ZnO//[0002]_AlN, and [10-10]_ZnO//[10-10]_AlNbetween ZnO core and AlN shell has been obtained. The ZnO NW templates were subsequently removed by annealing treatment in forming gas, resulting in ordered arrays of AlN single-crystal nanotubes. The impact factors on the epitaxial growth of AlN films are thoroughly investigated. It turned out that the growth parameters including lattice mismatch between substrate and AlN, growth temperature, and the polarity of ZnO substrate play important roles on the growth of single-crystal AlN films by ALD. Finally, non-polar AlN films with single-crystalline structure have been successfully grown onm-plane ZnO (10-10) single-crystal substrates. The as-grown hollow AlN nanotubes arrays and non-polar AlN films with single-crystalline structures are suggested to be highly promising for applications in nanoscale devices. Our research has developed a potential method to obtain other inorganic nanostructures and films with single-crystalline structure at fairly low temperature.

Pyramid-Shaped Single-Crystalline Nanostructure of Molybdenum with Excellent Mechanical, Electrical, and Optical Properties

Specific geometric morphology and improved crystalline properties are of great significance for the development of materials in micro-nano scale. However, for high-melting molybdenum (Mo), it is difficult to get high-quality structures exhibiting a single-crystalline nature and preconceived morphology simultaneously. In this paper, a pyramid-shaped single-crystalline Mo nanostructure was prepared through a thermal evaporation technique, as well as a series of experimental controls. Based on detailed characterizations, the growth mechanism was demonstrated to follow a sequential process that includes MoO₂ decomposition and Mo deposition, single-crystalline islands formation, layered nucleation, and competitive growth. Furthermore, the product was measured to show excellent physical properties. The prepared nanostructures exhibited strong nano-indentation hardness, elastic modulus, and tensile strength in mechanical measurements, which are much higher than those of the Mo bulks. In the measurement of electronic characteristics, the individual structures indicated very good electrical transport properties, with a conductance of ∼0.16 S. The prepared film with an area of 0.02 cm² showed large-current electron emission properties with a maximum current of 33.6 mA and a current density of 1.68 A cm^-2. Optical properties of the structures were measured to show obvious electromagnetic field localization and enhancement, which enabled it to have good surface enhanced Raman scattering (SERS) activity as a substrate material. The corresponding structure-response relationships were further discussed. The reported physical properties profit from the basic features of the Mo nanostructures, including the micro-nano scale, the single-crystalline nature in each grain, as well as the pyramid-shaped top morphology. The findings may provide a potential material for the research and application of micro-nano electrons and photons.

Vertically Aligned Single-Crystalline CoFe2O4 Nanobrush Architectures with High Magnetization and Tailored Magnetic Anisotropy

Micrometer-tall vertically aligned single-crystalline CoFe₂O₄ nanobrush architectures with extraordinarily large aspect ratio have been achieved by the precise control of a kinetic and thermodynamic non-equilibrium pulsed laser epitaxy process. Direct observations by scanning transmission electron microscopy reveal that the nanobrush crystal is mostly defect-free by nature, and epitaxially connected to the substrate through a continuous 2D interface layer. In contrast, periodic dislocations and lattice defects such as anti-phase boundaries and twin boundaries are frequently observed in the 2D interface layer, suggesting that interface misfit strain relaxation under a non-equilibrium growth condition plays a critical role in the self-assembly of such artificial architectures. Magnetic property measurements have found that the nanobrushes exhibit a saturation magnetization value of 6.16 B/f.u., which is much higher than the bulk value. The discovery not only enables insights into an effective route for fabricating unconventional high-quality nanostructures, but also demonstrates a novel magnetic architecture with potential applications in nanomagnetic devices.

Nanometer Scale Confined Growth of Single-Crystalline Gold Nanowires via Photocatalytic Reduction

Single-crystalline gold nanowires (Au NWs) are directly synthesized by the photocatalytic reduction of an aqueous HAuCl₄ solution inside high-aspect-ratio TiO₂ nanotubes (NTs). Crystalline TiO₂ (anatase) NTs are prepared by the template-assisted atomic layer deposition technique with a subsequent annealing. Under the irradiation of ultraviolet light, photoexcited electrons are formed on the surfaces of TiO₂ NTs and could reduce Au ions to create nuclei without using any surfactant, reducing agent, and/or seed. Once nucleation occurred, high-aspect-ratio Au NWs are grown inside the TiO₂ NTs in a diffusion-controlled manner. As the solution pH increased, the nucleation/growth rate decreased and twin-free (or not observed), single-crystalline Au NWs are formed. At a pH above 6, the nucleation/growth rates increased and Au nanoparticles are observed both inside and outside of the TiO₂ NTs. The confined nanoscale geometries of the interior of the TiO₂ NTs are found to play a key role in the controlled diffusion of Au species and in determining the crystal morphology of the resulting Au NWs.

Single Crystalline Ultrathin Nickel-Cobalt Alloy Nanosheets Array for Direct Hydrazine Fuel Cells

Ultrathin 2D metal alloy nanomaterials have great potential applications but their controlled syntheses are limited to few noble metal based systems. Herein Ni x Co1-x alloy nanosheets with ultrathin (sub-3 nm) single-crystalline 2D structure are synthesized through a topochemical reduction method. Moreover, the optimized composition Ni0.6Co0.4 alloy nanosheets array exhibits excellent performances for hydrazine oxidation reaction and direct hydrazine fuel cells.

Surfactant-Free Aqueous Synthesis of Pure Single-Crystalline SnSe Nanosheet Clusters as Anode for High Energy- and Power-Density Sodium-Ion Batteries

SnSe with 3D hierarchical nanostructure composed of interconnected single-crystal SnSe nanosheets is synthesized via a fast and effective strategy. Unexpectedly, when used as the anode material for Na-ion batteries (NIBs), the SnSe exhibits a high capacity (738 mA h g^-1 ), superior rate capability (40 A g^-1 ), and high energy density in a full cell. These results provide the possibility of SnSe use as NIBs anodes.

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

Single-crystalline artificial AB-stacked bilayer graphene is formed by aligned transfer of two single-crystalline monolayers on a wafer-scale. The obtained bilayer has a well-defined interface and is electronically equivalent to exfoliated or direct-grown AB-stacked bilayers.

Gigahertz Acoustic Vibrations of Elastically Anisotropic Indium-Tin-Oxide Nanorod Arrays

Active control of light is important for photonic integrated circuits, optical switches, and telecommunications. Coupling light with acoustic vibrations in nanoscale optical resonators offers optical modulation capabilities with high bandwidth and small footprint. Instead of using noble metals, here we introduce indium-tin-oxide nanorod arrays (ITO-NRAs) as the operating media and demonstrate optical modulation covering the visible spectral range (from 360 to 700 nm) with ∼20 GHz bandwidth through the excitation of coherent acoustic vibrations in ITO-NRAs. This broadband modulation results from the collective optical diffraction by the dielectric ITO-NRAs, and a high differential transmission modulation up to 10% is achieved through efficient near-infrared, on-plasmon-resonance pumping. By combining the frequency signatures of the vibrational modes with finite-element simulations, we further determine the anisotropic elastic constants for single-crystalline ITO, which are not known for the bulk phase. This technique to determine elastic constants using coherent acoustic vibrations of uniform nanostructures can be generalized to the study of other inorganic materials.

Oxidative-Etching-Assisted Synthesis of Centimeter-Sized Single-Crystalline Graphene

Centimeter-sized single-crystalline graphene is obtained by an oxidative-etching-assisted chemical vapor deposition (CVD) method. Gaseous oxidants are found to be highly responsible for graphene etching. By diminishing the uncertain amount of H2 O vapor in commercial H2 and precisely introducing additional O2 , the graphene nucleation density can be well controlled.

Novel polymer nanowire crystals of diketopyrrolopyrrole-based copolymer with excellent charge transport properties

The first demonstration of polymer nanowire (PNW) crystals based on a diketopyrrolopyrrole-based copolymer (i.e., PDTTDPP), and their application to field-effect transistors (FETs) is reported. Remarkably, transmission electron microscopy and selected area electron diffraction analyses of the PNW reveal its single-crystalline (SC) nature. FETs fabricated of a SC PNW exhibit a maximal charge carrier mobility of ≈7.00 cm(2) V(-1) s(-1) , which is almost one order of magnitude higher than that of the thin-film transistors made of the same polymer (PDTTDPP).

Growth of single-crystalline cobalt silicide nanowires and their field emission property

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.