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Wang H, Chen Q, Cao Y, Sang W, Tan F, Li H, Wang T, Gan Y, Xiang D, Liu T. Anisotropic Strain-Tailoring Nonlinear Optical Response in van der Waals NbOI 2. Nano Lett 2024; 24:3413-3420. [PMID: 38456746 DOI: 10.1021/acs.nanolett.4c00039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional (2D) NbOI2 demonstrates significant second-harmonic generation (SHG) with a high conversion efficiency. To unlock its full potential in practical applications, it is desirable to modulate the SHG behavior while utilizing the intrinsic lattice anisotropy. Here, we demonstrate direction-specific modulation of the SHG response in NbOI2 by applying anisotropic strain with respect to the intrinsic lattice orientations, where more than 2-fold enhancement in the SHG intensity is achieved under strain along the polar axis. The strain-driven SHG evolution is attributed to the strengthened built-in piezoelectric field (polar axis) and the enlarged Peierls distortions (nonpolar axis). Moreover, we provide quantifications of the correlation between strain and SHG intensity in terms of the susceptibility tensor. Our results demonstrate the effective coupling of orientation-specific strain to the anisotropic SHG response through the intrinsic polar order in 2D nonlinear optical crystals, opening a new paradigm toward the development of functional devices.
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Affiliation(s)
- Han Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Quan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
| | - Yi Cao
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Weihui Sang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Feixia Tan
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Honghong Li
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Tinghao Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Yang Gan
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Du Xiang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Tao Liu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
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2
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Kim YC, Jun SW, Ahn YH. Single bacteria identification with second-harmonic generation in MoS 2. Biosens Bioelectron 2023; 241:115675. [PMID: 37725844 DOI: 10.1016/j.bios.2023.115675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Revised: 09/04/2023] [Accepted: 09/05/2023] [Indexed: 09/21/2023]
Abstract
Transition-metal dichalcogenides exhibit extraordinary optical nonlinearities, making them promising candidates for advanced photonic applications. Here, we present the microbial control over second-harmonic generation (SHG) in monolayer MoS2 and the identification of single-cell bacteria. Bacteria deposited on monolayer MoS2 induce a change in the SHG signal, in the form of anisotropic polarization responses that depend on the relative orientation of the bacteria with respect to the MoS2 crystallographic direction. The anisotropic enhancement is consistent with the presence of a tensile stress along the lateral direction of bacteria axis; SHG imaging is highly effective in monitoring biomaterial strain as low as 0.1%. We also investigate the ultraviolet-induced removal of single bacteria, through the SHG imaging of MoS2. By monitoring the transient SHG signals, we determine the rupture times for bacteria, which varies noticeably for each species. This allows us to distinguish specific bacteria that share habitats; SHG imaging is useful for label free identification of pathogens at the single cell levels such as E. coli and L. casei. This label-free detection and identification of pathogens at the single-cell level can have a profound impact on the development of diagnostic tools for various applications.
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Affiliation(s)
- Young Chul Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea
| | - Seung Won Jun
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea
| | - Yeong Hwan Ahn
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea.
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3
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Guo S, Li C, Nie Z, Wang X, Wang M, Tian C, Yan X, Hu K, Long R. Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe 2/MoS 2 Heterostructures. J Phys Chem Lett 2023:10920-10929. [PMID: 38033191 DOI: 10.1021/acs.jpclett.3c02943] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
Understanding and controlling carrier dynamics in two-dimensional (2D) van der Waals heterostructures through strain are crucial for their flexible applications. Here, femtosecond transient absorption spectroscopy is employed to elucidate the interlayer electron transfer and relaxation dynamics under external tensile strains in a WSe2/MoS2 heterostructure. The results show that a modest ∼1% tensile strain can significantly alter the lifetimes of electron transfer and nonradiative electron-hole recombination by >30%. Ab initio non-adiabatic molecular dynamics simulations suggest that tensile strain weakens the electron-phonon coupling, thereby suppressing the transfer and recombination dynamics. Theoretical predictions indicate that strain-induced energy difference increases along the electron transfer path could contribute to the prolongation of the transfer lifetime. A subpicosecond decay process, related to hot-electron cooling, remains almost unaffected by strain. This study demonstrates the potential of tuning interlayer carrier dynamics through external strains, offering insights into flexible optoelectronic device design with 2D materials.
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Affiliation(s)
- Sen Guo
- School of Physical Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252000, China
- FSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Chaofan Li
- School of Physical Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252000, China
| | - Zhaogang Nie
- School of Physical Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252000, China
- FSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of the Ministry of Education, Beijing Normal University, Beijing 100875, China
| | - Minghong Wang
- School of Physical Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252000, China
| | - Cunwei Tian
- School of Physical Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252000, China
| | - Xinhua Yan
- Nobat Intelligent Equipment (Shandong), Company, Ltd., Liaocheng, Shandong 252000, China
| | - Kaige Hu
- FSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of the Ministry of Education, Beijing Normal University, Beijing 100875, China
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4
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Hung NT, Zhang K, Van Thanh V, Guo Y, Puretzky AA, Geohegan DB, Kong J, Huang S, Saito R. Nonlinear Optical Responses of Janus MoSSe/MoS 2 Heterobilayers Optimized by Stacking Order and Strain. ACS Nano 2023; 17:19877-19886. [PMID: 37643404 DOI: 10.1021/acsnano.3c04436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/31/2023]
Abstract
Nonlinear optical responses in second harmonic generation (SHG) of van der Waals heterobilayers, Janus MoSSe/MoS2, are theoretically optimized as a function of strain and stacking order by adopting an exchange-correlation hybrid functional and a real-time approach in first-principles calculation. We find that the calculated nonlinear susceptibility, χ(2), in AA stacking (550 pm/V) becomes three times as large as AB stacking (170 pm/V) due to the broken inversion symmetry in the AA stacking. The present theoretical prediction is compared with the observed SHG spectra of Janus MoSSe/MoS2 heterobilayers, in which the peak SHG intensity of AA stacking becomes four times as large as AB stacking. Furthermore, a relatively large, two-dimensional strain (4%) that breaks the C3v point group symmetry of the MoSSe/MoS2, enhances calculated χ(2) values for both AA (900 pm/V) and AB (300 pm/V) stackings 1.6 times as large as that without strain.
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Affiliation(s)
- Nguyen Tuan Hung
- Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
| | - Kunyan Zhang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
| | - Vuong Van Thanh
- School of Mechanical Engineering, Hanoi University of Science and Technology, Hanoi 100000, Viet Nam
| | - Yunfan Guo
- Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
| | - Riichiro Saito
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
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5
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Li Z, Huang J, Zhou L, Xu Z, Qin F, Chen P, Sun X, Liu G, Sui C, Qiu C, Lu Y, Gou H, Xi X, Ideue T, Tang P, Iwasa Y, Yuan H. An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces. Nat Commun 2023; 14:5568. [PMID: 37689758 PMCID: PMC10492835 DOI: 10.1038/s41467-023-41295-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Accepted: 08/29/2023] [Indexed: 09/11/2023] Open
Abstract
Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.
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Affiliation(s)
- Zeya Li
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Ling Zhou
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Zian Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Xiaojun Sun
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Chengqi Sui
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Yangfan Lu
- College of Materials Sciences and Engineering, National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing, 400030, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100094, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, 277-8581, Japan.
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Hamburg, 22761, Germany.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Hirosawa 2-1, Wako, 351-0198, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China.
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6
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Fu T, Bu K, Sun X, Wang D, Feng X, Guo S, Sun Z, Fang Y, Hu Q, Ding Y, Zhai T, Huang F, Lü X. Manipulating Peierls Distortion in van der Waals NbOX 2 Maximizes Second-Harmonic Generation. J Am Chem Soc 2023. [PMID: 37467160 DOI: 10.1021/jacs.3c04971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials, featuring relaxed phase-matching conditions and highly tunable optical nonlinearity, endow them with potential applications in nanoscale nonlinear optical (NLO) devices. Despite significant progress, fundamental questions in 2D NLO materials remain, such as how structural distortion affects second-order NLO properties, which call for advanced regulation and in situ diagnostic tools. Here, by applying pressure to continuously tune the displacement of Nb atoms in 2D vdW NbOI2, we effectively modulate the polarization and achieve a 3-fold boost of the second-harmonic generation (SHG) at 2.5 GPa. By introducing a Peierls distortion parameter, λ, we establish a quantitative relationship between λ and SHG intensity. Importantly, we further demonstrate that the SHG enhancement can be achieved under ambient conditions by anionic substitution to tune the distortion in NbO(I1-xBrx)2 (x = 0-1) compounds, where the chemical tailoring simulates the pressure effects on the structural optimization. Consequently, NbO(I0.60Br0.40)2 with λ = 0.17 exhibits a giant SHG of over 2 orders of magnitude higher than that in monolayer WSe2, reaching the record-high value among reported 2D vdW NLO materials. This work unambiguously demonstrates the correlation between Peierls distortion and SHG property and, more broadly, opens new paths for the development of advanced NLO materials by manipulating the structure distortions.
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Affiliation(s)
- Tonghuan Fu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Xuzhou Sun
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Dong Wang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Songhao Guo
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Qingyang Hu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Yang Ding
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
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7
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Wu J, Ye Y, Jian J, Yao X, Li J, Tang B, Ma H, Wei M, Li W, Lin H, Li L. Reversible Thermally Driven Phase Change of Layered In 2Se 3 for Integrated Photonics. Nano Lett 2023. [PMID: 37405904 DOI: 10.1021/acs.nanolett.3c01247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.
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Affiliation(s)
- Jianghong Wu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Xiaoping Yao
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, People's Republic of China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Wenbin Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
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8
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Yang S, Chen W, Sa B, Guo Z, Zheng J, Pei J, Zhan H. Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS 2. Nano Lett 2023; 23:3070-3077. [PMID: 36995751 DOI: 10.1021/acs.nanolett.3c00771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Triggered by the expanding demands of semiconductor devices, strain engineering of two-dimensional transition metal dichalcogenides (TMDs) has garnered considerable research interest. Through steady-state measurements, strain has been proved in terms of its modulation of electronic energy bands and optoelectronic properties in TMDs. However, the influence of strain on the spin-orbit coupling as well as its related valley excitonic dynamics remains elusive. Here, we demonstrate the effect of strain on the excitonic dynamics of monolayer WS2 via steady-state fluorescence and transient absorption spectroscopy. Combined with theoretical calculations, we found that tensile strain can reduce the spin-splitting value of the conduction band and lead to transitions between different exciton states via spin-flip mechanism. Our findings suggest that the spin-flip process is strain-dependent, provides a reference for application of valleytronic devices, where tensile strain is usually existing during their design and fabrication.
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Affiliation(s)
- Shichao Yang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenwei Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Zhiyong Guo
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jiajie Pei
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovatation Laboratory for Optoelectronic Information, Fuzhou 350108, Fujian, Peoples Republic of China
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9
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Li D, Huang X, Wu Q, Zhang L, Lu Y, Hong X. Ferroelectric Domain Control of Nonlinear Light Polarization in MoS 2 via PbZr 0.2 Ti 0.8 O 3 Thin Films and Free-Standing Membranes. Adv Mater 2023; 35:e2208825. [PMID: 36462168 DOI: 10.1002/adma.202208825] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 11/08/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS2 exhibit exceptionally strong nonlinear optical responses, while nanoscale control of the amplitude, polar orientation, and phase of the nonlinear light in TMDCs remains challenging. In this work, by interfacing monolayer MoS2 with epitaxial PbZr0.2 Ti0.8 O3 (PZT) thin films and free-standing PZT membranes, the amplitude and polarization of the second harmonic generation (SHG) signal are modulated via ferroelectric domain patterning, which demonstrates that PZT membranes can lead to in-operando programming of nonlinear light polarization. The interfacial coupling of the MoS2 polar axis with either the out-of-plane polar domains of PZT or the in-plane polarization of domain walls tailors the SHG light polarization into different patterns with distinct symmetries, which are modeled via nonlinear electromagnetic theory. This study provides a new material platform that enables reconfigurable design of light polarization at the nanoscale, paving the path for developing novel optical information processing, smart light modulators, and integrated photonic circuits.
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Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
- School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian, Liaoning, 116024, China
| | - Xi Huang
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511, USA
| | - Qiuchen Wu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Le Zhang
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Yongfeng Lu
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0298, USA
| | - Xia Hong
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0298, USA
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10
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Lin BH, Chao YC, Hsieh IT, Chuu CP, Lee CJ, Chu FH, Lu LS, Hsu WT, Pao CW, Shih CK, Su JJ, Chang WH. Remarkably Deep Moiré Potential for Intralayer Excitons in MoSe 2/MoS 2 Twisted Heterobilayers. Nano Lett 2023; 23:1306-1312. [PMID: 36745443 DOI: 10.1021/acs.nanolett.2c04524] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A moiré superlattice formed in twisted van der Waals bilayers has emerged as a new tuning knob for creating new electronic states in two-dimensional materials. Excitonic properties can also be altered drastically due to the presence of moiré potential. However, quantifying the moiré potential for excitons is nontrivial. By creating a large ensemble of MoSe2/MoS2 heterobilayers with a systematic variation of twist angles, we map out the minibands of interlayer and intralayer excitons as a function of twist angles, from which we determine the moiré potential for excitons. Surprisingly, the moiré potential depth for intralayer excitons is up to ∼130 meV, comparable to that for interlayer excitons. This result is markedly different from theoretical calculations based on density functional theory, which show an order of magnitude smaller moiré potential for intralayer excitons. The remarkably deep intralayer moiré potential is understood within the framework of structural reconstruction within the moiré unit cell.
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Affiliation(s)
- Bo-Han Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Yung-Chun Chao
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - I Ta Hsieh
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
| | - Chih-Piao Chuu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu30075, Taiwan
| | - Chien-Ju Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Fu-Hsien Chu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Li-Syuan Lu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
| | - Wei-Ting Hsu
- Department of Physics, The University of Texas at Austin, Austin, Texas78712, United States
- Department of Physics, National Tsing Hua University, Hsinchu30004, Taiwan
| | - Chun-Wei Pao
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
| | - Chih-Kang Shih
- Department of Physics, The University of Texas at Austin, Austin, Texas78712, United States
| | - Jung-Jung Su
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
- College of Engineering, Chang Gung University, Taoyuan33302, Taiwan
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11
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Li ZY, Cheng HY, Kung SH, Yao HC, Inbaraj CRP, Sankar R, Ou MN, Chen YF, Lee CC, Lin KH. Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide. Nanomaterials (Basel) 2023; 13:750. [PMID: 36839118 PMCID: PMC9962579 DOI: 10.3390/nano13040750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Revised: 02/13/2023] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Indium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain alters the electronic and optical properties is, thus, an important issue. In this work, we experimentally measured the strain dependence on the angle-resolved second harmonic generation (SHG) pattern of a few layers of InSe. We used the exfoliation method to fabricate InSe flakes and measured the SHG images of the flakes with different azimuthal angles. We found the SHG intensity of InSe decreased, while the compressive strain increased. Through first-principles electronic structure calculations, we investigated the strain dependence on SHG susceptibilities and the corresponding angle-resolved SHG pattern. The experimental data could be fitted well by the calculated results using only a fitting parameter. The demonstrated method based on first-principles in this work can be used to quantitatively model the strain-induced angle-resolved SHG patterns in 2D materials. Our obtained results are very useful for the exploration of the physical properties of flexible devices based on 2D materials.
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Affiliation(s)
- Zi-Yi Li
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Yu Cheng
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Sheng-Hsun Kung
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
| | - Hsuan-Chun Yao
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
| | | | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
| | - Min-Nan Ou
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Chi-Cheng Lee
- Department of Physics, Tamkang University, Tamsui, New Taipei 251301, Taiwan
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
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12
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You J, Pan J, Shang SL, Xu X, Liu Z, Li J, Liu H, Kang T, Xu M, Li S, Kong D, Wang W, Gao Z, Zhou X, Zhai T, Liu ZK, Kim JK, Luo Z. Salt-Assisted Selective Growth of H-phase Monolayer VSe 2 with Apparent Hole Transport Behavior. Nano Lett 2022; 22:10167-10175. [PMID: 36475688 DOI: 10.1021/acs.nanolett.2c04133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
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Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jie Pan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Xiang Xu
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jingwei Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Mengyang Xu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shaobo Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Deqi Kong
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wenliang Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhaoli Gao
- Department of Biomedical Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong999777, P. R. China
- CUHK Shenzhen Research Institute, No.10, second, Yuexing Road, Nanshan, Shenzhen518057, P. R. China
| | - Xing Zhou
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Jang-Kyo Kim
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- The Hong Kong University of Science and Technology Shenzhen Research Institute, No. 9 Yuexing first RD, South Area Hi-tech Park, Nanshan, Shenzhen518057, China
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13
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Zheng B, Fu J, Zhu Y, Liang J, She Y, Xiang J, Ma X, Zhang Y, Wang S, Hu G, Zhou Y, Feng Y, Fu Z, Pan N, Lu Y, Zeng H, Gu M, Liu K, Xiang B. Synthesis of stable γ-phase MnS 1-xSe x nanoflakes with inversion symmetry breaking. Nanoscale 2022; 14:17036-17043. [PMID: 36367106 DOI: 10.1039/d2nr05136b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Inversion symmetry breaking plays a critical role in the formation of magnetic skyrmions. Therefore, for the application of skyrmion-based devices, it is important to develop novel engineering techniques and explore new non-centrosymmetric lattices. In this paper, we report the rational synthesis of stable γ-phase MnS1-xSex (0 ≤ x ≤ 0.45) nanoflakes with an asymmetric distribution of the elemental content, which persists on inversion symmetry breaking. The temperature dependence of resonant second-harmonic generation characterization reveals that a non-centrosymmetric crystal structure exists in our as-grown γ-phase MnS1-xSex with spatial-inversion symmetry breaking. By tuning the parameters of nucleation temperature and growth time, we produced a detailed growth phase diagram, revealing a controllable as-grown structure evolution from γ-phase wurtzite-type to α-phase rock-salt type structure of MnS1-xSex nanoflakes. Our work provides a new playground to explore novel materials that have broken inversion symmetry.
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Affiliation(s)
- Bo Zheng
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Yuanmin Zhu
- School of Materials Science and Engineering, Dongguan University of Technology, Dongguan, 523808, China
- Department of Materials Science and Engineering, Southern University of Science and Technology China, Shenzhen, China
| | - Jing Liang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Yongzhi She
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Junxiang Xiang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Xiang Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Ying Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Shasha Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Guojing Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Yuehui Zhou
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Yan Feng
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Zhengping Fu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Nan Pan
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yalin Lu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Meng Gu
- Department of Materials Science and Engineering, Southern University of Science and Technology China, Shenzhen, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Bin Xiang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
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14
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Ci P, Zhao Y, Sun M, Rho Y, Chen Y, Grigoropoulos CP, Jin S, Li X, Wu J. Breaking Rotational Symmetry in Supertwisted WS 2 Spirals via Moiré Magnification of Intrinsic Heterostrain. Nano Lett 2022; 22:9027-9035. [PMID: 36346996 PMCID: PMC9706673 DOI: 10.1021/acs.nanolett.2c03347] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 11/02/2022] [Indexed: 06/16/2023]
Abstract
Twisted stacking of van der Waals materials with moiré superlattices offers a new way to tailor their physical properties via engineering of the crystal symmetry. Unlike well-studied twisted bilayers, little is known about the overall symmetry and symmetry-driven physical properties of continuously supertwisted multilayer structures. Here, using polarization-resolved second harmonic generation (SHG) microscopy, we report threefold (C3) rotational symmetry breaking in supertwisted WS2 spirals grown on non-Euclidean surfaces, contrasting the intact symmetry of individual monolayers. This symmetry breaking is attributed to a geometrical magnifying effect in which small relative strain between adjacent twisted layers (heterostrain), verified by Raman spectroscopy and multiphysics simulations, generates significant distortion in the moiré pattern. Density-functional theory calculations can explain the C3 symmetry breaking and unusual SHG response by the interlayer wave function coupling. These findings thus pave the way for further developments in the so-called "3D twistronics".
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Affiliation(s)
- Penghong Ci
- Department
of Materials Science and Engineering, University
of California, Berkeley, California94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California94720, United States
- Institute
for Advanced Study, Shenzhen University, Shenzhen518060, China
| | - Yuzhou Zhao
- Department
of Chemistry, University of Wisconsin -
Madison, Madison, Wisconsin53706, United States
| | - Muhua Sun
- National
Center for Electron Microscopy in Beijing, School of Materials Science
and Engineering, Tsinghua University, Beijing100084, China
| | - Yoonsoo Rho
- Department
of Mechanical Engineering, University of
California, Berkeley, California94720, United States
- Physical
& Life Sciences and NIF & Photon Sciences, Lawrence Livermore National Laboratory, Livermore, California94550, United States
| | - Yabin Chen
- School
of Aerospace Engineering, Beijing Institute
of Technology, Beijing, 100081, China
| | - Costas P. Grigoropoulos
- Department
of Mechanical Engineering, University of
California, Berkeley, California94720, United States
| | - Song Jin
- Department
of Chemistry, University of Wisconsin -
Madison, Madison, Wisconsin53706, United States
| | - Xiaoguang Li
- Institute
for Advanced Study, Shenzhen University, Shenzhen518060, China
| | - Junqiao Wu
- Department
of Materials Science and Engineering, University
of California, Berkeley, California94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California94720, United States
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15
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Cao Y, Tang YL, Zhu YL, Wang Y, Liu N, Zou MJ, Feng YP, Geng WR, Li C, Li D, Li Y, Wu B, Liu J, Gong F, Zhang Z, Ma XL. Polar Magnetism Above 600 K with High Adaptability in Perovskite Oxides. ACS Appl Mater Interfaces 2022; 14:48052-48060. [PMID: 36226575 DOI: 10.1021/acsami.2c15286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High magnetic order temperature, sustainable polar insulating state, and tolerance to device integrations are substantial advantages for applications in next-generation spintronics. However, engineering such functionality in a single-phase system remains a challenge owing to the contradicted chemical and electronic requirements for polar nature and magnetism, especially with an ordering state highly above room temperature. Perovskite-related oxides with unique flexibility allow electron-unpaired subsystems to merge into the polar lattice to induce magnetic interactions, combined with their inherent asymmetry, thereby promising polar magnet design. Herein, by atomic-level composition assembly, a family of Ti/Fe co-occupied perovskite oxide films Pb(Ti1-x,Fex)O3 (PFT(x)) with a Ruddlesden-Popper superstructure are successfully synthesized on several different substrates, demonstrating exceptional adaptability to different integration conditions. Furthermore, second-harmonic generation measurements convince the symmetry-breaking polar character. Notably, a ferromagnetic ground state up to 600 K and a steady insulating state far beyond room temperature were achieved simultaneously in these films. This strategy of constructing layered modular superlattices in perovskite oxides could be extended to other strongly correlated systems for triggering nontrivial quantum physical phenomena.
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Affiliation(s)
- Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Nan Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Changji Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Da Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yong Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Jiaqi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Fenghui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, 110016 Shenyang, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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16
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Shi J, Wu X, Wu K, Zhang S, Sui X, Du W, Yue S, Liang Y, Jiang C, Wang Z, Wang W, Liu L, Wu B, Zhang Q, Huang Y, Qiu CW, Liu X. Giant Enhancement and Directional Second Harmonic Emission from Monolayer WS 2 on Silicon Substrate via Fabry-Pérot Micro-Cavity. ACS Nano 2022; 16:13933-13941. [PMID: 35984986 DOI: 10.1021/acsnano.2c03033] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) possess large second-order optical nonlinearity, making them ideal candidates for miniaturized on-chip frequency conversion devices, all-optical interconnection, and optoelectronic integration components. However, limited by subnanometer thickness, the monolayer TMD exhibits low second harmonic generation (SHG) conversion efficiency (<0.1%) and poor directionality, which hinders their practical applications. Herein, we proposed a Fabry-Pérot (F-P) cavity formed by coupling an atomically thin WS2 film with a silicon hole matrix to enhance the SH emission. A maximum enhancement (∼1580 times) is achieved by tuning the excitation wavelength to be resonant with the microcavity modes. The giant enhancement is attributed to the strong electric field enhancement in the F-P cavity and the oscillator strength enhancement of excitons from suspended WS2. Moreover, directional SH emission (divergence angle ∼5°) is obtained benefiting from the resonance of the F-P microcavity. Our research results can provide a practical sketch to develop both high-efficiency and directional nonlinear optical devices for silicon-based on-chip integration optics.
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Affiliation(s)
- Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Keming Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xinyu Sui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhuo Wang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Wenxiang Wang
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Luqi Liu
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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17
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Rahman S, Yildirim T, Tebyetekerwa M, Khan AR, Lu Y. Extraordinary Nonlinear Optical Interaction from Strained Nanostructures in van der Waals CuInP 2S 6. ACS Nano 2022; 16:13959-13968. [PMID: 35980379 DOI: 10.1021/acsnano.2c03294] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Local strain engineering and structural modification of 2D materials furnish benevolent control over their optoelectronic properties and provide an exciting approach to tune light-matter interaction in layered materials. Application of strain at the nanoscale is typically obtained through permanently deformed nanostructures such as nanowrinkles, which yield large band gap modulation, photoluminescence enhancement, and surface potential. Ultrathin transition metal dichalcogenides (TMDs) have been greatly analyzed for such purposes. Herein, we extend strain-induced nanoengineering to an emerging 2D material, CuInP2S6 (CIPS), and visualize extraordinary control over nonlinear light-matter interaction. Wrinkle nanostructures exhibit ∼160-fold enhancement in second harmonic generation (SHG) compared to unstrained regions, which is additionally influenced by a change in the dielectric environment. The SHG enhancement was significantly modulated by the percentage of applied strain which was numerically estimated. Furthermore, polarization-dependent SHG revealed quenching and enhancement in the parallel and perpendicular directions, respectively, due to the direction of the compressive vector. Our work provides an important advancement in controlling optoelectronic properties beyond TMDs for imminent applications in flexible electronics.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Tanju Yildirim
- Center for Functional Sensor and Actuator, Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Mike Tebyetekerwa
- Dow Centre for Sustainable Engineering Innovation, School of Chemical Engineering, University of Queensland, St Lucia, Queensland 4072, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Centre for Quantum Computation and Communication Technology, School of Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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18
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Abstract
Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, School of Engineering, The Australian National University, Acton, ACT 2601, Australia.
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19
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Zhang L, Wang H, Zong X, Zhou Y, Wang T, Wang L, Chen X. Probing interlayer shear thermal deformation in atomically-thin van der Waals layered materials. Nat Commun 2022; 13:3996. [PMID: 35810154 PMCID: PMC9271035 DOI: 10.1038/s41467-022-31682-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 06/17/2022] [Indexed: 11/09/2022] Open
Abstract
Atomically-thin van der Waals layered materials, with both high in-plane stiffness and bending flexibility, offer a unique platform for thermomechanical engineering. However, the lack of effective characterization techniques hinders the development of this research topic. Here, we develop a direct experimental method and effective theoretical model to study the mechanical, thermal, and interlayer properties of van der Waals materials. This is accomplished by using a carefully designed WSe2-based heterostructure, where monolayer WSe2 serves as an in-situ strain meter. Combining experimental results and theoretical modelling, we are able to resolve the shear deformation and interlayer shear thermal deformation of each individual layer quantitatively in van der Waals materials. Our approach also provides important interlayer coupling information as well as key thermal parameters. The model can be applied to van der Waals materials with different layer numbers and various boundary conditions for both thermally-induced and mechanically-induced deformations. Van der Waals materials exhibit unique thermomechanical properties, but interlayer deformations are usually challenging to measure. Here, the authors exploit the strain-dependent optical properties of monolayer WSe2 to quantitatively probe the interlayer shear thermal deformations and interlayer coupling in phosphorene and hexagonal boron nitride.
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Affiliation(s)
- Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Xinrong Zong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816, Nanjing, P.R. China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816, Nanjing, P.R. China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China.
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20
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Ranasinghe JC, Jain A, Wu W, Zhang K, Wang Z, Huang S. Engineered 2D materials for optical bioimaging and path toward therapy and tissue engineering. J Mater Res 2022; 37:1689-1713. [PMID: 35615304 PMCID: PMC9122553 DOI: 10.1557/s43578-022-00591-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 05/04/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) layered materials as a new class of nanomaterial are characterized by a list of exotic properties. These layered materials are investigated widely in several biomedical applications. A comprehensive understanding of the state-of-the-art developments of 2D materials designed for multiple nanoplatforms will aid researchers in various fields to broaden the scope of biomedical applications. Here, we review the advances in 2D material-based biomedical applications. First, we introduce the classification and properties of 2D materials. Next, we summarize surface and structural engineering methods of 2D materials where we discuss surface functionalization, defect, and strain engineering, and creating heterostructures based on layered materials for biomedical applications. After that, we discuss different biomedical applications. Then, we briefly introduced the emerging role of machine learning (ML) as a technological advancement to boost biomedical platforms. Finally, the current challenges, opportunities, and prospects on 2D materials in biomedical applications are discussed. Graphical abstract
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Affiliation(s)
- Jeewan C. Ranasinghe
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Arpit Jain
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Wenjing Wu
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Ziyang Wang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA
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21
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Liu M, Li W, Cheng D, Fang X, Zhao H, Wang D, Li J, Zhai Y, Fan J, Wang H, Wang X, Fang D, Ma X. Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles. RSC Adv 2022; 12:14578-14585. [PMID: 35702203 PMCID: PMC9106107 DOI: 10.1039/d2ra02108k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2022] [Accepted: 05/04/2022] [Indexed: 11/21/2022] Open
Abstract
In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensitivity features. And a reduction and transition of the bandgap was observed when the As/Sb and Sb/Bi LHS existed under compressive strain. The density of states and the conduction band minimum-valence band maximum characteristics exhibited corresponding changes under the strain. Then a spatial charge-separation phenomenon and strong optical absorption properties in the mid-infrared range can also be observed from calculated results. Theoretical research into As/Sb and Sb/Bi LHSs has laid a solid foundation for As/Sb and Sb/Bi LHS device manufacture. The band gap of the heterojunction decreases with increasing strain and becomes metallic at larger strains.![]()
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Affiliation(s)
- Mengying Liu
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Weijie Li
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Dan Cheng
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China .,Changchun Guanghua University 3555 Wu-Han Road Changchun 130022 P. R. China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China .,School of Science and Engineering, The Chinese University of Hong Kong Shenzhen Guangdong 518172 P. R. China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals Beijing 100088 P. R. China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Jinhua Li
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Yingjiao Zhai
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Jie Fan
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Haizhu Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China
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22
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Covre FS, Faria PE, Gordo VO, de Brito CS, Zhumagulov YV, Teodoro MD, Couto ODD, Misoguti L, Pratavieira S, Andrade MB, Christianen PCM, Fabian J, Withers F, Galvão Gobato Y. Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe 2. Nanoscale 2022; 14:5758-5768. [PMID: 35348558 DOI: 10.1039/d2nr00315e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Strain plays an important role for the optical properties of monolayer transition metal dichalcogenides (TMDCs). Here, we investigate strain effects in a monolayer MoSe2 sample with a large bubble region using μ-Raman, second harmonic generation (SHG), μ-photoluminescence and magneto μ-photoluminescence at low temperature. Remarkably, our results reveal the presence of a non-uniform strain field and the observation of emission peaks at lower energies which are the signatures of exciton and trion quasiparticles red-shifted by strain effects in the bubble region, in agreement with our theoretical predictions. Furthermore, we have observed that the emission in the strained region decreases the trion binding energy and enhances the valley g-factors as compared to non-strained regions. Considering uniform biaxial strain effects within the unit cell of the TMDC monolayer (ML), our first principles calculations predict the observed enhancement of the exciton valley Zeeman effect. In addition, our results suggest that the exciton-trion fine structure plays an important role for the optical properties of strained TMDC ML. In summary, our study provides fundamental insights on the behaviour of excitons and trions in strained monolayer MoSe2 which are particularly relevant to properly characterize and understand the fine structure of excitonic complexes in strained TMDC systems/devices.
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Affiliation(s)
- F S Covre
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
| | - P E Faria
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - V O Gordo
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859, Campinas, São Paulo, Brazil
| | - C Serati de Brito
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
| | - Y V Zhumagulov
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - M D Teodoro
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
| | - O D D Couto
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859, Campinas, São Paulo, Brazil
| | - L Misoguti
- Instituto de Física de São Carlos - Universidade de São Paulo, CEP 13566-590, São Carlos, São Paulo, Brazil
| | - S Pratavieira
- Instituto de Física de São Carlos - Universidade de São Paulo, CEP 13566-590, São Carlos, São Paulo, Brazil
| | - M B Andrade
- Instituto de Física de São Carlos - Universidade de São Paulo, CEP 13566-590, São Carlos, São Paulo, Brazil
| | - P C M Christianen
- High Field Magnet Laboratory (HFML - EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - J Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - F Withers
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK
| | - Y Galvão Gobato
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
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23
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Wu Q, Liang F, Kang L, Wu J, Lin Z. Sliding Modulation in Nonlinear Optical Effect in Two-Dimensional van der Waals Cu 2MoS 4. ACS Appl Mater Interfaces 2022; 14:9535-9543. [PMID: 35148072 DOI: 10.1021/acsami.1c24696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Owing to different nonlinear optical (NLO) motifs with diverse structural and symmetrical assemblies, two-dimensional (2D) van der Waals (vdW) transition metal ternary chalcogenides (TMTCs) have unique advantages in nano-NLO modulation compared to 2D vdW transition metal dichalcogenides (e.g., MoS2). Based on first-principles calculations, in this study, we discover that layered Cu2MoS4 with two tetrahedral [MoS4] and [CuS4] motifs, as a representative 2D vdW TMTC, has an extremely rare sliding-modulated second harmonic effect with nearly 70% fluctuation, much larger than 5% in MoS2 with a single octahedral [MoS6] motif because of different synergistic effects among intra- and interlayer NLO polarizations induced by the [CuS4] and [MoS4] NLO-active motifs. Furthermore, the Cu2MoS4 layers exhibit a low energy barrier in interlayer sliding with a robust SHG response against large strains, displaying a novel and applicable NLO-modulation mechanism in nano-optoelectronics.
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Affiliation(s)
- Qingchen Wu
- Functional Crystals Lab, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fei Liang
- Functional Crystals Lab, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Kang
- Functional Crystals Lab, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jian Wu
- Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zheshuai Lin
- Functional Crystals Lab, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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24
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Schaub E, Ahammou B, Landesman JP. Polarimetric photoluminescence microscope for strain imaging on semiconductor devices. Appl Opt 2022; 61:1307-1315. [PMID: 35201011 DOI: 10.1364/ao.449825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Accepted: 01/17/2022] [Indexed: 06/14/2023]
Abstract
Anisotropic strain induces a partial linear polarization of the photo-luminescence (PL) emitted by cubic semiconductor crystals such as GaAs or InP. This paper thus presents a polarimetric PL microscope dedicated to the characterization of semiconductor devices. The anisotropic strain is quantified through the determination of the degree of linear polarization (DOLP) of the PL and the angle of this partial linear polarization. We illustrate the possibilities of this tool by mapping the anisotropic strain generated in GaAs by the presence of a stressor film at its surface, that is, a microstructure defined in a dielectric thin film (SiNx) that has been deposited with a built-in stress and shaped into a narrow stripe by lithography and etching. Our setup shows a DOLP resolution as low as 4.5×10-4 on GaAs.
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25
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He C, Wu R, Zhu L, Huang Y, Du W, Qi M, Zhou Y, Zhao Q, Xu X. Anisotropic Second-Harmonic Generation Induced by Reduction of In-Plane Symmetry in 2D Materials with Strain Engineering. J Phys Chem Lett 2022; 13:352-361. [PMID: 34985291 DOI: 10.1021/acs.jpclett.1c03571] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Strain engineering is an attractive method to induce and control anisotropy for polarized optoelectronic applications with two-dimensional (2D) materials. Herein, we have investigated the nonlinear optical coefficient dispersion relationship and the second-harmonic generation (SHG) pattern evolution under the uniaxial strains for graphene, WS2, GaSe, and In2Se3 monolayers. The uniaxial strain can break the in-plane symmetry of 2D materials, leading to both trade-off breaking of the nonlinear coefficient and new emergent nonlinear coefficients. In such a case, a classical sixfold ϕ-dependent SHG pattern is transformed into a distorted sixfold SHG pattern under the strain. Due to the lattice symmetry breaking and the uneven charge density distribution in strained 2D materials, the SHG patterns also depend on the excitation photon energy. The results could give a guide for the SHG pattern analysis in experiments, suggesting strain engineering on 2D materials for the tunable anisotropy in polarized and flexible nonlinear optical devices.
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Affiliation(s)
- Chuan He
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Ruowei Wu
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Lipeng Zhu
- School of Electronic Engineering, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Wanyi Du
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Mei Qi
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
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26
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Di Giorgio C, Blundo E, Pettinari G, Felici M, Polimeni A, Bobba F. Exceptional Elasticity of Microscale Constrained MoS 2 Domes. ACS Appl Mater Interfaces 2021; 13:48228-48238. [PMID: 34592817 PMCID: PMC8517950 DOI: 10.1021/acsami.1c13293] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Accepted: 09/21/2021] [Indexed: 05/31/2023]
Abstract
The outstanding mechanical performances of two-dimensional (2D) materials make them appealing for the emerging fields of flextronics and straintronics. However, their manufacturing and integration in 2D crystal-based devices rely on a thorough knowledge of their hardness, elasticity, and interface mechanics. Here, we investigate the elasticity of highly strained monolayer-thick MoS2 membranes, in the shape of micrometer-sized domes, by atomic force microscopy (AFM)-based nanoindentation experiments. A dome's crushing procedure is performed to induce a local re-adhesion of the dome's membrane to the bulk substrate under the AFM tip's load. It is worth noting that no breakage, damage, or variation in size and shape are recorded in 95% of the crushed domes upon unloading. Furthermore, such a procedure paves the way to address quantitatively the extent of the van der Waals interlayer interaction and adhesion of MoS2 by studying pull-in instabilities and hysteresis of the loading-unloading cycles. The fundamental role and advantage of using a superimposed dome's constraint are also discussed.
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Affiliation(s)
- Cinzia Di Giorgio
- Department
of Physics E.R. Caianiello, University of
Salerno, 84084 Fisciano, Italy
- INFN,
Sezione di Napoli, Gruppo Collegato di Salerno, Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy
| | - Elena Blundo
- Physics
Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Giorgio Pettinari
- Institute
for Photonics and Nanotechnologies (CNR-IFN), National Research Council, 00156 Rome, Italy
| | - Marco Felici
- Physics
Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Antonio Polimeni
- Physics
Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Fabrizio Bobba
- Department
of Physics E.R. Caianiello, University of
Salerno, 84084 Fisciano, Italy
- INFN,
Sezione di Napoli, Gruppo Collegato di Salerno, Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy
- CNR-SPIN, 84084 Fisciano, SA, Italy
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27
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He C, Wu R, Qi M, Huang Y, Zhou Y, Zhang S, Zhao Q, Xu X. Dispersion Property and Evolution of Second Harmonic Generation Pattern in Type-I and Type-II van der Waals Heterostructures. ACS Appl Mater Interfaces 2021; 13:27334-27342. [PMID: 34096715 DOI: 10.1021/acsami.1c07441] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Dispersion property and second harmonic generation (SHG) pattern of novel two-dimensional (2D) van der Waals heterostructures (vdWHs) is of great significance not only for the characterization of material symmetry but also for understanding nonlinear photophysical phenomena. Herein, we demonstrate the SHG response of 2D type-I (MoTe2/WSe2) and type-II (MoSe2/WSe2) band alignment of vdWHs. In the dispersion relation of the second-order nonlinear coefficient, the pronounced peaks of the d16 element for both vdWHs are mainly contributed by resonance in the interband transition processes, whereas other elements are derived from the intraband transition processes because of the highly efficient charge transfer from WSe2 to MoTe2 in type-I vdWHs and the ultrafast charge separation between WSe2 and MoSe2 in type-II vdWHs, respectively. Besides, more nonzero nonlinear coefficient elements can participate in a nonlinear response at the oblique incidence, to which special attention needs paid. The polarization angle α-dependent SHG patterns display a rotational fourfold symmetry, whereas the azimuthal angle ϕ-dependent SHG patterns show sixfold symmetry for both type-I and type-II vdWHs at any wavelength under normal incidence. Under oblique incidence, the α-dependent (ϕ-dependent) SHG patterns will reduce to twofold (threefold) symmetry for both vdWHs. The results highlight the potential to deterministically engineer novel nonlinear optical properties for tunable anisotropic applications of nonlinear optoelectronic devices based on vdWHs.
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Affiliation(s)
- Chuan He
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Ruowei Wu
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Mei Qi
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Sujuan Zhang
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China
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Sun RX, Guo QQ, Huo CF, Yan XQ, Liu ZB, Tian JG. Critical Strain-Induced Photoresponse in Folded Graphene Superlattices. ACS Appl Mater Interfaces 2021; 13:21573-21581. [PMID: 33929842 DOI: 10.1021/acsami.1c00786] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Strain engineering is the most effective method to break the symmetry of the graphene lattice and achieve graphene band gap tunability. However, a critical strain (>20%) is required to open the graphene band gap, and it is very difficult to achieve such a large strain. This limits the development of experimental research and optoelectronic devices based on graphene strain. In this work, we report a method for preparing large-strain graphene superlattices via surface energy engineering. The maximum strain of the curved lattice could reach 50%. In particular, our pioneering work reports the behavior of an ultrafast (as short as 6 ps) photoresponse in a strained folded graphene superlattice. The photocurrent map shows a large increase (up to 102) of the photoresponsivity in the tensile graphene lattice, which is generated by the interaction between the strained and pristine graphene. Through Raman spectroscopy, Kelvin probe force microscopy, and high-resolution transmission electron microscopy, we demonstrate that the ultrathreshold strain in the graphene bends triggers the opening of the graphene band gap and results in a unique photovoltaic effect. This work deepens the understanding of the strain-induced change of the photoelectrical properties of graphene and proves the potential of strained graphene as a platform for the generation of novel high-speed, miniaturized graphene-based photodetectors.
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Affiliation(s)
- Ruo-Xuan Sun
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Qin-Qin Guo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Chang-Fu Huo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xiao-Qing Yan
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Wang J, Han M, Wang Q, Ji Y, Zhang X, Shi R, Wu Z, Zhang L, Amini A, Guo L, Wang N, Lin J, Cheng C. Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS Nano 2021; 15:6633-6644. [PMID: 33819027 DOI: 10.1021/acsnano.0c09983] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Wrinkling two-dimensional (2D) transition metal dichalcogenides (TMDCs) provides a mechanism to adjust the physical and chemical properties as per need. Traditionally, TMDCs wrinkles achieved by transferring exfoliated materials on prestretched polymer suffer from poor control and limited sample area, which significantly hinders desirable applications. Herein, we fabricate large-area monolayer TMDCs wrinkle arrays directly on the m-quartz substrate using strained epitaxy. The uniaxial thermal expansion coefficient mismatch between the substrate and TMDCs materials enables the generation of large uniaxial thermal strain. By quenching the TMDCs after growth, this uniaxial thermal strain can be quickly released as a form of wrinkle arrays along the [0001]quartz direction. Using WS2 as a model system, the size of as-grown wrinkles can be finely modulated within sub-100 nm by changing the quenching temperature. These WS2 wrinkles can be locally folded and form various multilayer structures with odd layer numbers during the transfer process. Besides, the corrugated structures in WS2 wrinkles induce significant changes to optical properties including anisotropic Raman response, enhanced photoluminescence, and second harmonic generation emissions. Furthermore, these wrinkle arrays exhibit enhanced chemical reactivity that can be selectively engineered to ribbon arrays with improved electrocatalytic performance. The developed strategy of strained epitaxy here should enable flexibility in the design of more sophisticated 2D-based structures, offering a simple but effective way toward the modulation of properties with enhanced performances.
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Affiliation(s)
- Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mengjiao Han
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Yaqiang Ji
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Xian Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Zefei Wu
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Liang Zhang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 2751, Australia
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Ning Wang
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
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Vianna PG, Almeida ADS, Gerosa RM, Bahamon DA, de Matos CJS. Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate. Nanoscale Adv 2021; 3:272-278. [PMID: 36131879 PMCID: PMC9416855 DOI: 10.1039/d0na00779j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 11/13/2020] [Indexed: 06/14/2023]
Abstract
Monolayer transition-metal dichalcogenides (TMDCs) present high second-order optical nonlinearity, which is extremely desirable for, e.g., frequency conversion in nonlinear photonic devices. On the other hand, the atomic thickness of 2D materials naturally leads to low frequency converted intensities, highlighting the importance of designing structures that enhance the nonlinear response for practical applications. A number of methods to increase the pump electric field at 2D materials have been reported, relying on complex plasmonic and/or metasurface structures. Here, we take advantage of the fact that unstructured substrates with a low refractive index naturally maximize the pump field at a dielectric interface, offering a simple means to promote enhanced nonlinear optical effects. In particular, we measured second harmonic generation (SHG) in MoS2 and WS2 on fluorine tin oxide (FTO), which presents an epsilon-near zero point near our 1550 nm pump wavelength. Polarized SHG measurements reveal an SHG intensity that is one order of magnitude higher on FTO than on a glass substrate.
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Affiliation(s)
- Pilar G Vianna
- MackGraphe - Graphene and Nanomaterials Research Institute, Mackenzie Presbyterian University São Paulo - 01302-907 Brazil
| | - Aline Dos S Almeida
- MackGraphe - Graphene and Nanomaterials Research Institute, Mackenzie Presbyterian University São Paulo - 01302-907 Brazil
| | - Rodrigo M Gerosa
- MackGraphe - Graphene and Nanomaterials Research Institute, Mackenzie Presbyterian University São Paulo - 01302-907 Brazil
| | - Dario A Bahamon
- MackGraphe - Graphene and Nanomaterials Research Institute, Mackenzie Presbyterian University São Paulo - 01302-907 Brazil
| | - Christiano J S de Matos
- MackGraphe - Graphene and Nanomaterials Research Institute, Mackenzie Presbyterian University São Paulo - 01302-907 Brazil
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31
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Lima JS, Oliveira IS, Azevedo S, Freitas A, Bezerra CG, Machado LD. Mechanical and electronic properties of boron nitride nanosheets with graphene domains under strain. RSC Adv 2021; 11:35127-35140. [PMID: 35493153 PMCID: PMC9042849 DOI: 10.1039/d1ra05831b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2021] [Accepted: 10/14/2021] [Indexed: 11/21/2022] Open
Abstract
Hybrid structures comprised of graphene domains embedded in larger hexagonal boron nitride (h-BN) nanosheets were first synthesized in 2013. However, the existing theoretical investigations on them have only considered relaxed structures. In this work, we use Density Functional Theory (DFT) and Molecular Dynamics (MD) simulations to investigate the mechanical and electronic properties of this type of nanosheet under strain. Our results reveal that the Young's modulus of the hybrid sheets depends only on the relative concentration of graphene and h-BN in the structure, showing little dependence on the shape of the domain or the size of the structure for a given concentration. Regarding the tensile strength, we obtained higher values using triangular graphene domains. We find that the studied systems can withstand large strain values (between 15% and 22%) before fracture, which always begins at the weaker C–B bonds located at the interface between the two materials. Concerning the electronic properties, we find that by combining composition and strain, we can produce hybrid sheets with band gaps spanning an extensive range of values (between 1.0 eV and 3.5 eV). Our results also show that the band gap depends more on the composition than on the external strain, particularly for structures with low carbon concentration. The combination of atomic-scale thickness, high ultimate strain, and adjustable band gap suggests applications of h-BN nanosheets with graphene domains in wearable electronics. We investigate the mechanical and electronic properties of hBN nanosheets with graphene domains under strain. We find that the structures withstand large strain values and present highly adjustable band gaps, ranging from 1.0 to 3.5 eV.![]()
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Affiliation(s)
- J. S. Lima
- Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-970, Natal, RN, Brazil
| | - I. S. Oliveira
- Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-970, João Pessoa, PB, Brazil
| | - S. Azevedo
- Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-970, João Pessoa, PB, Brazil
| | - A. Freitas
- Departamento de Física, Universidade Federal do Rio Grande do Norte, 59072-970, Natal, RN, Brazil
| | - C. G. Bezerra
- Departamento de Física, Universidade Federal do Rio Grande do Norte, 59072-970, Natal, RN, Brazil
| | - L. D. Machado
- Departamento de Física, Universidade Federal do Rio Grande do Norte, 59072-970, Natal, RN, Brazil
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32
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Tong XW, Lin YN, Huang R, Zhang ZX, Fu C, Wu D, Luo LB, Li ZJ, Liang FX, Zhang W. Direct Tellurization of Pt to Synthesize 2D PtTe 2 for High-Performance Broadband Photodetectors and NIR Image Sensors. ACS Appl Mater Interfaces 2020; 12:53921-53931. [PMID: 33202136 DOI: 10.1021/acsami.0c14996] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Platinum telluride (PtTe2) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe2 toward potential photoelectric and photovoltaic application has not been explored yet. Herein, we report direct tellurization of Pt nanofilms to synthesize large-area PtTe2 films and the influence of growth conditions on the morphology of PtTe2. Electrical analysis reveals that the as-grown PtTe2 films exhibit typical semimetallic behavior, which is in agreement with the results of first-principles density functional theory (DFT) simulation. Moreover, the combination of multilayered PtTe2 and Si results in the formation of a PtTe2/Si heterojunction, exhibiting an obvious rectifying effect. Moreover, the PtTe2-based photodetector displays a broadband photoresponse to incident radiation in the range of 200-1650 nm, with the maximum photoresponse at a wavelength of ∼980 nm. The R and D* of the PtTe2-based photodetector are found to be 0.406 A W-1 and 3.62 × 1012 Jones, respectively. In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τrise and τfall is estimated to be 7.51 and 36.7 μs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe2-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe2 material will be useful for application in NIR optoelectronics.
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Affiliation(s)
- Xiao-Wei Tong
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Ya-Nan Lin
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Rui Huang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Zhi-Xiang Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Can Fu
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Di Wu
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lin-Bao Luo
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Zhong-Jun Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Feng-Xia Liang
- School of Materials Science and Engineering, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Anhui 230009, China
| | - Wei Zhang
- Academy of Optoelectronic Technology, National Engineering Laboratory of Special Display Technology, Hefei University of Technology, Hefei 230009, China
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Ma H, Liang J, Hong H, Liu K, Zou D, Wu M, Liu K. Rich information on 2D materials revealed by optical second harmonic generation. Nanoscale 2020; 12:22891-22903. [PMID: 33201974 DOI: 10.1039/d0nr06051h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) materials have brought a spectacular revolution in fundamental research and industrial applications due to their unique physical properties of atomically thin thickness, strong light-matter interaction, unity valley polarization and enhanced many-body interactions. To fully explore their exotic physical properties and facilitate potential applications in electronics and optoelectronics, an effective and versatile characterization method is highly demanded. Among the many methods of characterization, optical second harmonic generation (SHG) has attracted broad attention because of its sensitivity, versatility and simplicity. The SHG technique is sufficiently sensitive at the atomic scale and therefore suitable for studies on 2D materials. More importantly, it has the capacity to acquire abundant information ranging from crystallographic, and electronic, to magnetic properties in various 2D materials due to its sensitivity to both spatial-inversion symmetry and time-reversal symmetry. These advantages accompanied by its characteristics of non-invasion and high throughput make SHG a powerful tool for 2D materials. This review summarizes recent experimental developments of SHG applications in 2D materials and also provides an outlook of potential prospects based on SHG.
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Affiliation(s)
- He Ma
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, China.
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Khan AR, Liu B, Lü T, Zhang L, Sharma A, Zhu Y, Ma W, Lu Y. Direct Measurement of Folding Angle and Strain Vector in Atomically Thin WS 2 Using Second-Harmonic Generation. ACS Nano 2020; 14:15806-15815. [PMID: 33179915 DOI: 10.1021/acsnano.0c06901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Structural engineering techniques such as local strain engineering and folding provide functional control over critical optoelectronic properties of 2D materials. Local strain engineering at the nanoscale level is practically achieved via permanently deformed wrinkled nanostructures, which are reported to show photoluminescence enhancement, bandgap modulation, and funneling effect. Folding in 2D materials is reported to tune optoelecronic properties via folding angle dependent interlayer coupling and symmetry variation. The accurate and efficient monitoring of local strain vector and folding angle is important to optimize the performance of optoelectronic devices. Conventionally, the accurate measurement of both strain amplitude and strain direction in wrinkled nanostructures requires the combined usage of multiple tools resulting in manufacturing lead time and cost. Here, we demonstrate the usage of a single tool, polarization-dependent second-harmonic generation (SHG), to determine the folding angle and strain vector accurately and efficiently in ultrathin WS2. The folding angle in trilayer WS2 folds exhibiting 1-9 times SHG enhancement is probed through variable approaches such as SHG enhancement factor, maxima and minima SHG phase difference, and linear dichroism. In compressive strain induced wrinkled nanostructures, strain-dependent SHG quenching and enhancement is observed parallel and perpendicular, respectively, to the direction of the compressive strain vector, allowing us to determine the local strain vector accurately using a photoelastic approach. We further demonstrate that SHG is highly sensitive to band-nesting-induced transition (C-peak), which can be significantly modulated by strain. Our results show SHG as a powerful probe to folding angle and strain vector.
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Affiliation(s)
- Ahmed Raza Khan
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College), Lahore, 54700, Pakistan
| | - Boqing Liu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Tieyu Lü
- Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, 361005, China
| | - Linglong Zhang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Ankur Sharma
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Yi Zhu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Wendi Ma
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Yuerui Lu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
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35
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Zhou L, Fu H, Lv T, Wang C, Gao H, Li D, Deng L, Xiong W. Nonlinear Optical Characterization of 2D Materials. Nanomaterials (Basel) 2020; 10:E2263. [PMID: 33207552 PMCID: PMC7696749 DOI: 10.3390/nano10112263] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2020] [Revised: 10/26/2020] [Accepted: 10/30/2020] [Indexed: 12/11/2022]
Abstract
Characterizing the physical and chemical properties of two-dimensional (2D) materials is of great significance for performance analysis and functional device applications. As a powerful characterization method, nonlinear optics (NLO) spectroscopy has been widely used in the characterization of 2D materials. Here, we summarize the research progress of NLO in 2D materials characterization. First, we introduce the principles of NLO and common detection methods. Second, we introduce the recent research progress on the NLO characterization of several important properties of 2D materials, including the number of layers, crystal orientation, crystal phase, defects, chemical specificity, strain, chemical dynamics, and ultrafast dynamics of excitons and phonons, aiming to provide a comprehensive review on laser-based characterization for exploring 2D material properties. Finally, the future development trends, challenges of advanced equipment construction, and issues of signal modulation are discussed. In particular, we also discuss the machine learning and stimulated Raman scattering (SRS) technologies which are expected to provide promising opportunities for 2D material characterization.
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Affiliation(s)
| | | | | | | | | | | | | | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; (L.Z.); (H.F.); (T.L.); (C.W.); (H.G.); (D.L.); (L.D.)
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Abstract
2D BCN material consisting of graphene and hexagonal boron nitride (h-BN) has received extensive attention due to its abundant electronic properties and promising applications. The actual applications of 2D BCN require that there be precise control over its electronic properties. Using density functional theory calculations, we systematically investigate the electronic structure and effective mass of 2D BCN under biaxial strain. It is demonstrated that the band gap of zigzag BCNs decreases monotonously as the tensile strain increases. Moreover, the system exhibits a similar trend, regardless of the C/h-BN ratio. In sharp contrast, the band gap of armchair BCNs depends on the C/h-BN ratio. Specifically, the band gap of C2(BN)4 decreases significantly, while the band gap of C3(BN)3 and C4(BN)2 initially remains almost unchanged and then increases with increasing biaxial strain in armchair BCNs. In addition, it is found that the effective masses of the electron and hole of BCNs can be effectively modulated by the biaxial strain. Our results suggest a new route to control the electronic properties of 2D BCN and may also facilitate the realization of electronic devices based on 2D BCN material.
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Affiliation(s)
- Lifei Liu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
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Yan Y, Ding S, Wu X, Zhu J, Feng D, Yang X, Li F. Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering. RSC Adv 2020; 10:39455-39467. [PMID: 35515419 PMCID: PMC9057462 DOI: 10.1039/d0ra07288e] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 10/13/2020] [Indexed: 01/05/2023] Open
Abstract
Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
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Affiliation(s)
- Yalan Yan
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
| | - Shuang Ding
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
| | - Xiaonan Wu
- Department of Chemical Engineering, Chengde Petroleum College Chengde 067000 People's Republic of China
| | - Jian Zhu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University No. 2699 Qianjin Street Changchun 130012 People's Republic of China
| | - Dengman Feng
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University No. 2699 Qianjin Street Changchun 130012 People's Republic of China
| | - Xiaodong Yang
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
| | - Fangfei Li
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University No. 2699 Qianjin Street Changchun 130012 People's Republic of China
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38
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Wang Y, Ghotbi M, Das S, Dai Y, Li S, Hu X, Gan X, Zhao J, Sun Z. Difference frequency generation in monolayer MoS 2. Nanoscale 2020; 12:19638-19643. [PMID: 32524108 DOI: 10.1039/d0nr01994a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Difference frequency generation has long been employed for numerous applications, such as coherent light generation, sensing and imaging. Here, we demonstrate difference frequency generation down to atomic thickness in monolayer molybdenum disulfide. By mixing femtosecond optical pulses at wavelength of 406 nm with tunable pulses in the spectral range of 1300-1520 nm, we generate tunable pulses across the spectral range of 550-590 nm with frequency conversion efficiency up to ∼2 × 10-4. The second-order nonlinear optical susceptibility of monolayer molybdenum disulfide, χ, is calculated as ∼1.8 × 10-8 m V-1, comparable to the previous results demonstrated with second harmonic generation. Such a highly efficient down-conversion nonlinear optical process in two-dimensional layered materials may open new ways to their nonlinear optical applications, such as coherent light generation and amplification.
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Affiliation(s)
- Yadong Wang
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
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39
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He C, Zhao Q, Huang Y, Du W, Zhu L, Zhou Y, Zhang S, Xu X. Strain-dependent anisotropic nonlinear optical response in two-dimensional functionalized MXene Sc 2CT 2 (T = O and OH). Phys Chem Chem Phys 2020; 22:21428-21435. [PMID: 32944724 DOI: 10.1039/d0cp03968c] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Tunable optical properties play an important role in the high performance of optoelectronic applications based on two-dimensional (2D) transition metal carbide and nitride (MXene) materials. Herein, the optical properties of functionalized MXene monolayers Sc2CT2 (T = O and OH) are investigated by strain engineering. The strain-dependent linear optical properties of Sc2CT2 possess broadband optical response due to the geometry and orbital overlap effect. The peaks from the second-order nonlinear coefficient elements d (d15, d16, and d31) at around half the band-gap exhibit a redshift for Sc2CO2 (blueshift for Sc2C(OH)2) with the increase of strain. The strain-dependent d reveals that Sc2CO2 with -1268 pm V-1 %-1 has a larger photoelastic coefficient than that of Sc2C(OH)2 with -574 pm V-1 %-1 at 1% strain. Meanwhile, the photoelastic tensors can not only be increased but also reduced with the increase of strain due to the dispersion relation. Moreover, the azimuthal angle-dependent second harmonic generation (SHG) from strained Sc2CT2 monolayers depends highly on the strained states and the pumping photon energy. The results pave the way for the tunable, broadband, and anisotropic applications of nonlinear optoelectronic devices based on MXenes based on strain engineering.
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Affiliation(s)
- Chuan He
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China.
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40
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Liang J, Tu T, Chen G, Sun Y, Qiao R, Ma H, Yu W, Zhou X, Ma C, Gao P, Peng H, Liu K, Yu D. Unveiling the Fine Structural Distortion of Atomically Thin Bi 2 O 2 Se by Third-Harmonic Generation. Adv Mater 2020; 32:e2002831. [PMID: 32583941 DOI: 10.1002/adma.202002831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2020] [Revised: 05/21/2020] [Indexed: 06/11/2023]
Abstract
Bismuth oxyselenide (Bi2 O2 Se), a new type of 2D material, has recently attracted increased attention due to its robust bandgap, stability under ambient conditions, and ultrahigh electron mobility. In such complex oxides, fine structural distortion tends to play a decisive role in determining the unique physical properties, such as the ferrorotational order, ferroelectricity, and magnetoelasticity. Therefore, an in-depth investigation of the fine structural symmetry of Bi2 O2 Se is necessary to exploit its potential applications. However, conventional techniques are either time consuming or requiring tedious sample treatment. Herein, a noninvasive and high-throughput approach is reported for characterizing the fine structural distortion in 2D centrosymmetric Bi2 O2 Se by polarization-dependent third-harmonic generation (THG). Unprecedentedly, the divergence between the experimental results and the theoretical prediction of the perpendicular component of polarization-dependent THG indicates a fine structural distortion, namely, a <1.4° rotation of the oxygen square in the tetragonal (Bi2 O2 ) layers. This rotation breaks the intrinsic mirror symmetry of 2D Bi2 O2 Se, eventually reducing the symmetry from the D4h to the C4h point group. The results demonstrate that THG is highly sensitive to even fine symmetry variations, thereby showing its potential to uncover hidden phase transitions and interacting polarized sublattices in novel 2D material systems.
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Affiliation(s)
- Jing Liang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Teng Tu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Guanchu Chen
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yuanwei Sun
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Ruixi Qiao
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - He Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Wentao Yu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Xu Zhou
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Gao
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
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41
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Dai Y, Wang Y, Das S, Xue H, Bai X, Hulkko E, Zhang G, Yang X, Dai Q, Sun Z. Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS 2. ACS Nano 2020; 14:8442-8448. [PMID: 32598130 PMCID: PMC7735744 DOI: 10.1021/acsnano.0c02642] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ(3)eff| tuning from (∼12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |χ(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.
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Affiliation(s)
- Yunyun Dai
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
- (Y.D.)
| | - Yadong Wang
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
| | - Susobhan Das
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
| | - Hui Xue
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
| | - Xueyin Bai
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
| | - Eero Hulkko
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
| | - Guangyu Zhang
- Institute of Physics and Beijing National
Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoxia Yang
- Division of Nanophotonics, CAS Center for Excellence
in Nanoscience, National Center for Nanoscience
and Technology, Beijing 100190, China
| | - Qing Dai
- Division of Nanophotonics, CAS Center for Excellence
in Nanoscience, National Center for Nanoscience
and Technology, Beijing 100190, China
| | - Zhipei Sun
- Department of Electronics
and Nanoengineering, Aalto University, Fi-00076 Aalto, Finland
- QTF Centre
of Excellence, Department of Applied Physics, Aalto University, Fi-00076 Aalto, Finland
- (Z.S.)
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42
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Yao K, Yanev E, Chuang HJ, Rosenberger MR, Xu X, Darlington T, McCreary KM, Hanbicki AT, Watanabe K, Taniguchi T, Jonker BT, Zhu X, Basov DN, Hone JC, Schuck PJ. Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors. ACS Nano 2020; 14:708-714. [PMID: 31891477 DOI: 10.1021/acsnano.9b07555] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report continuous-wave second harmonic and sum frequency generation from two-dimensional transition metal dichalcogenide monolayers and their heterostructures with pump irradiances several orders of magnitude lower than those of conventional pulsed experiments. The high nonlinear efficiency originates from above-gap excitons in the band nesting regions, as revealed by wavelength-dependent second order optical susceptibilities quantified in four common monolayer transition metal dichalcogenides. Using sum frequency excitation spectroscopy and imaging, we identify and distinguish one- and two-photon resonances in both monolayers and heterobilayers. Data for heterostructures reveal responses from constituent layers accompanied by nonlinear signal correlated with interlayer transitions. We demonstrate spatial mapping of heterogeneous interlayer coupling by sum frequency and second harmonic confocal microscopy on heterobilayer MoSe2/WSe2.
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Affiliation(s)
- Kaiyuan Yao
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
- Department of Mechanical Engineering , University of California, Berkeley , Berkeley , California 94720 , United States
| | - Emanuil Yanev
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
| | - Hsun-Jen Chuang
- Materials Science & Technology Division , Naval Research Laboratory , Washington , D.C. 20375 , United States
| | - Matthew R Rosenberger
- Materials Science & Technology Division , Naval Research Laboratory , Washington , D.C. 20375 , United States
| | - Xinyi Xu
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
| | - Thomas Darlington
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
- Department of Physics , University of California, Berkeley , Berkeley , California 94720 , United States
| | - Kathleen M McCreary
- Materials Science & Technology Division , Naval Research Laboratory , Washington , D.C. 20375 , United States
| | - Aubrey T Hanbicki
- Materials Science & Technology Division , Naval Research Laboratory , Washington , D.C. 20375 , United States
- Laboratory for Physical Sciences , College Park , Maryland 20740 , United States
| | - Kenji Watanabe
- National Institute for Materials Science , Tsukuba 305-0047 , Japan
| | | | - Berend T Jonker
- Materials Science & Technology Division , Naval Research Laboratory , Washington , D.C. 20375 , United States
| | - Xiaoyang Zhu
- Department of Chemistry , Columbia University , New York , New York 10027 , United States
| | - D N Basov
- Department of Physics , Columbia University , New York , New York 10027 , United States
| | - James C Hone
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
| | - P James Schuck
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
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43
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Dai Z, Liu L, Zhang Z. Strain Engineering of 2D Materials: Issues and Opportunities at the Interface. Adv Mater 2019; 31:e1805417. [PMID: 30650204 DOI: 10.1002/adma.201805417] [Citation(s) in RCA: 186] [Impact Index Per Article: 37.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2018] [Revised: 10/04/2018] [Indexed: 05/23/2023]
Abstract
Triggered by the growing needs of developing semiconductor devices at ever-decreasing scales, strain engineering of 2D materials has recently seen a surge of interest. The goal of this principle is to exploit mechanical strain to tune the electronic and photonic performance of 2D materials and to ultimately achieve high-performance 2D-material-based devices. Although strain engineering has been well studied for traditional semiconductor materials and is now routinely used in their manufacturing, recent experiments on strain engineering of 2D materials have shown new opportunities for fundamental physics and exciting applications, along with new challenges, due to the atomic nature of 2D materials. Here, recent advances in the application of mechanical strain into 2D materials are reviewed. These developments are categorized by the deformation modes of the 2D material-substrate system: in-plane mode and out-of-plane mode. Recent state-of-the-art characterization of the interface mechanics for these 2D material-substrate systems is also summarized. These advances highlight how the strain or strain-coupled applications of 2D materials rely on the interfacial properties, essentially shear and adhesion, and finally offer direct guidelines for deterministic design of mechanical strains into 2D materials for ultrathin semiconductor applications.
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Affiliation(s)
- Zhaohe Dai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
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44
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Wei Y, Xu X, Wang S, Li W, Jiang Y. Second harmonic generation in Janus MoSSe a monolayer and stacked bulk with vertical asymmetry. Phys Chem Chem Phys 2019; 21:21022-21029. [PMID: 31528892 DOI: 10.1039/c9cp03395e] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A recently synchronized Janus TMD material with broken out-of-plane symmetry offers a vertical dipole to enhance nonlinear optical behavior. Here, by comparing the second harmonic generation properties of MoS2 and MoSSe monolayers, we investigated the nonzero out-of-plane SHG susceptibilities of a Janus MoSSe 2D material. A three-fold enhancement of out-of-plane SHG susceptibilities exists in three stacked bulks of Janus MoSSe compared to that in the monolayer. A sensitivity to their stack pattern is also found. The broken out-of-plane symmetry, vertical dipole, and intrinsic tunable electronic properties of Janus two-dimensional materials make MoSSe a promising nanomaterial for nonlinear optical devices.
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Affiliation(s)
- Yadong Wei
- Department of Physics, Harbin Institute of Technology, Harbin, China.
| | - Xiaodong Xu
- Department of Physics, Harbin Institute of Technology, Harbin, China.
| | - Songsong Wang
- Department of Physics, Harbin Institute of Technology, Harbin, China.
| | - Weiqi Li
- Department of Physics, Harbin Institute of Technology, Harbin, China.
| | - Yongyuan Jiang
- Department of Physics, Harbin Institute of Technology, Harbin, China. and Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China and Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin, China and Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Harbin, China
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45
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Stiehm T, Schneider R, Kern J, Niehues I, Michaelis de Vasconcellos S, Bratschitsch R. Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors. Rev Sci Instrum 2019; 90:083102. [PMID: 31472615 DOI: 10.1063/1.5100593] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2019] [Accepted: 07/11/2019] [Indexed: 06/10/2023]
Abstract
Two-dimensional semiconductors have recently emerged as promising materials for novel optoelectronic devices. In particular, they exhibit favorable nonlinear optical properties. Potential applications include broadband and ultrafast light sources, optical signal processing, and generation of nonclassical light states. The prototypical nonlinear process second harmonic generation (SHG) is a powerful tool to gain insight into nanoscale materials because of its dependence on crystal symmetry. Material resonances also play an important role in the nonlinear response. Notably, excitonic resonances critically determine the magnitude and spectral dependence of the nonlinear susceptibility. We perform ultrabroadband SHG spectroscopy of atomically thin semiconductors by using few-cycle femtosecond infrared laser pulses. The spectrum of the second harmonic depends on the investigated material, MoS2 or WS2, and also on the spectral and temporal shape of the fundamental laser pulses used for excitation. Here, we present a method to remove the influence of the laser by normalization with the flat SHG response of thin hexagonal boron nitride crystals. Moreover, we exploit the distinct angle dependence of the second harmonic signal to suppress two-photon photoluminescence from the semiconductor monolayers. Our experimental technique provides the calibrated frequency-dependent nonlinear susceptibility χ(2)(ω) of atomically thin materials. It allows for the identification of the prominent A and B exciton resonances, as well as excited exciton states.
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Affiliation(s)
- Torsten Stiehm
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Robert Schneider
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Johannes Kern
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Iris Niehues
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | | | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
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46
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Li D, Wei C, Song J, Huang X, Wang F, Liu K, Xiong W, Hong X, Cui B, Feng A, Jiang L, Lu Y. Anisotropic Enhancement of Second-Harmonic Generation in Monolayer and Bilayer MoS 2 by Integrating with TiO 2 Nanowires. Nano Lett 2019; 19:4195-4204. [PMID: 31136188 DOI: 10.1021/acs.nanolett.9b01933] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The ability to design and enhance the nonlinear optical responses in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) is both of fundamental interest and highly desirable for developing TMDC-based nonlinear optical applications, such as nonlinear convertors and optical modulators. Here, we report for the first time a strong anisotropic enhancement of optical second-harmonic generation (SHG) in monolayer molybdenum disulfide (MoS2) by integrating with one-dimensional (1D) titanium dioxide nanowires (NWs). The SHG signal from the MoS2/NW hybrid structures is over 2 orders of magnitude stronger than that in the bare monolayer MoS2. Polarized SHG measurements revealed a giant anisotropy in SHG response of the MoS2/NW hybrid. The pattern of the anisotropic SHG depends highly on the stacking angle between the nanowire direction and the MoS2 crystal orientation, which is attributed to the 1D NW-induced directional strain fields in the layered MoS2. A similar effect has also been observed in bilayer MoS2/NW hybrid structure, further proving the proposed scenario. This work provides an effective approach to selectively and directionally designing the nonlinear optical response of layered TMDCs, paving the way for developing high-performance, anisotropic nonlinear photonic nanodevices.
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Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0299 , United States
- College of Mechanical & Electrical Engineering , Wenzhou University , Wenzhou 325035 , China
| | - Chengyiran Wei
- Department of Electrical and Computer Engineering , University of Nebraska--Lincoln , Lincoln , Nebraska 68588-0511 , United States
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Jingfeng Song
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0299 , United States
| | - Xi Huang
- Department of Electrical and Computer Engineering , University of Nebraska--Lincoln , Lincoln , Nebraska 68588-0511 , United States
| | - Fei Wang
- Department of Mechanical & Materials Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Kun Liu
- School of Optoelectronic Engineering and Instrumentation Science , Dalian University of Technology , Dalian , Liaoning 116023 , China
| | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Xia Hong
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0299 , United States
| | - Bai Cui
- Department of Mechanical & Materials Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Aixin Feng
- College of Mechanical & Electrical Engineering , Wenzhou University , Wenzhou 325035 , China
| | - Lan Jiang
- Laser Micro/Nano-Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , China
| | - Yongfeng Lu
- Department of Electrical and Computer Engineering , University of Nebraska--Lincoln , Lincoln , Nebraska 68588-0511 , United States
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47
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Kıranşan KD. Preparation and Characterization of Highly Flexible, Free‐Standing, Three‐Dimensional and Rough NiMOF/rGO Composite Paper Electrode for Determination of Catechol. ChemistrySelect 2019. [DOI: 10.1002/slct.201900974] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Kader Dağcı Kıranşan
- Atatürk UniversityFaculty of ScienceDepartment of Chemistry Erzurum 25240 Turkey
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48
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Liang J, Wang J, Zhang Z, Su Y, Guo Y, Qiao R, Song P, Gao P, Zhao Y, Jiao Q, Wu S, Sun Z, Yu D, Liu K. Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation. Adv Mater 2019; 31:e1808160. [PMID: 30920702 DOI: 10.1002/adma.201808160] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2018] [Revised: 03/02/2019] [Indexed: 05/23/2023]
Abstract
Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D3h WS2 monolayer and a centrosymmetric D3d WS2 bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS2 is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.
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Affiliation(s)
- Jing Liang
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Jinhuan Wang
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhihong Zhang
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yingze Su
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yi Guo
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Ruixi Qiao
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Peizhao Song
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Peng Gao
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yun Zhao
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Qingze Jiao
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Shiwei Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Zhipei Sun
- Department of Micro- and Nanosciences, Aalto University, Espoo, 02150, Finland
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, South University of Science and Technology, Shenzhen, 518055, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
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Hao Q, Yi H, Su H, Wei B, Wang Z, Lao Z, Chai Y, Wang Z, Jin C, Dai J, Zhang W. Phase Identification and Strong Second Harmonic Generation in Pure ε-InSe and Its Alloys. Nano Lett 2019; 19:2634-2640. [PMID: 30841699 DOI: 10.1021/acs.nanolett.9b00487] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), ε phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe1- xTe x and InSe1- xS x ( x = 0.1 and 0.2) are ε phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the noncentrosymmetric crystal structure of the ε-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure ε-InSe and alloyed InSe0.9Te0.1 and InSe1- xS x ( x = 0.1 and 0.2) are around 1-2 orders of magnitude higher than that of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility χ(2) of ε-InSe is larger than that of ε-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of ε-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.
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Affiliation(s)
- Qiaoyan Hao
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Huan Yi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Huimin Su
- Department of Physics , Southern University of Science and Technology , Shenzhen 518055 , P. R. China
| | - Bin Wei
- International Iberian Nanotechnology Laboratory , Av. Mestre Jose Veiga , P-4715330 Braga , Portugal
| | - Zhuo Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhezhu Lao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Yang Chai
- Department of Applied Physics , Hong Kong Polytechnic University , Hong Kong 999077 , P. R. China
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory , Av. Mestre Jose Veiga , P-4715330 Braga , Portugal
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Junfeng Dai
- Department of Physics , Southern University of Science and Technology , Shenzhen 518055 , P. R. China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology , Shenzhen University , Shenzhen 518060 , P. R. China
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50
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Xue H, Dai Y, Kim W, Wang Y, Bai X, Qi M, Halonen K, Lipsanen H, Sun Z. High photoresponsivity and broadband photodetection with a band-engineered WSe 2/SnSe 2 heterostructure. Nanoscale 2019; 11:3240-3247. [PMID: 30706932 DOI: 10.1039/c8nr09248f] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W-1 and 4.4 × 1010 Jones and those at 1550 nm are ∼80 A W-1 and 1.4 × 1010 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
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Affiliation(s)
- Hui Xue
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland.
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