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Luo Z, Yu Z, Lu X, Niu W, Yu Y, Yao Y, Tian F, Tan CL, Sun H, Gao L, Qin W, Xu Y, Zhao Q, Song XX. Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices. Nano Lett 2024. [PMID: 38728596 DOI: 10.1021/acs.nanolett.4c01885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Zhihao Yu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Fuguo Tian
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Xu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiang-Xiang Song
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China Suzhou 215123, China
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2
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Su SH, Huang TT, Pan BR, Lee JC, Qiu YJ, Chuang PY, Gultom P, Cheng CM, Chen YC, Huang JCA. Large Tunable Spin-to-Charge Conversion in Ni 80Fe 20/Molybdenum Disulfide by Cu Insertion. ACS Appl Mater Interfaces 2024; 16. [PMID: 38670928 PMCID: PMC11082844 DOI: 10.1021/acsami.4c03360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 04/12/2024] [Accepted: 04/18/2024] [Indexed: 04/28/2024]
Abstract
Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.
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Affiliation(s)
- Shu Hsuan. Su
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Tzu Tai Huang
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Bi-Rong Pan
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Jung-Chuan Lee
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Sheng
Chuang Technology Company, Taichung 407330, Taiwan
| | - Yi Jie Qiu
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Pei-Yu Chuang
- National
Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
| | - Pangihutan Gultom
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Cheng-Maw Cheng
- National
Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
- Department
of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Yi-Chun Chen
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Jung-Chung Andrew Huang
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Department
of Applied Physics, National University
of Kaohsiung, Kaohsiung 811726, Taiwan
- Taiwan Consortium
of Emergent Crystalline Materials, Ministry
of Science and Technology, Taipei 106, Taiwan
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3
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Gupta NK, Kumar A, Pandey L, Hait S, Barwal V, Khan A, Mishra V, Sharma N, Kumar N, Chaudhary S. High temperature stability in few atomic layer MoS 2 based thin film heterostructures: structural, static and dynamic magnetization properties. Nanoscale 2023. [PMID: 37470330 DOI: 10.1039/d3nr01719b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) have shown commendable properties for spintronic applications. From the device perspective, the structural quality of the TMD as well as its interface with the adjacent ferromagnetic (FM) layer is of paramount importance. Here, we present the spin-dynamic behaviour in the widely studied TMDs, i.e., MoS2 using Co60Fe20B20 (CoFeB), i.e., in MoS2(1-4 layers)/CoFeB(4-15 nm) heterostructures, both in the as-grown state and in the in situ annealed state (400 °C in a vacuum). Raman spectroscopy revealed systematic variation in the separation (δ) between the characteristic Raman shifts corresponding to the E2g and A1gvis-à-vis the number of layers (nL) of MoS2. The analysis of the ferromagnetic resonance (FMR) spectroscopy measurements performed on these heterostructures revealed the spin pumping from CoFeB to the MoS2 layer as evidenced by the ∼49% (∼51%) enhancement in the effective damping parameter with respect to the damping parameter of bare as-deposited (annealed) CoFeB films. This enhancement is attributed to the spin-pumping owing to the high spin-orbit coupling of monolayer MoS2. The latter is also confirmed by density functional theory calculations. By finding the effective spin mixing conductance of the MoS2/CoFeB interface, the effective spin current density in the MoS2 layer is estimated to increase from ∼0.3 to 0.7 MA m-2 with CoFeB thickness for both the as-deposited and annealed heterostructures. Furthermore, the δ vs. nL curve of the as-deposited heterostructure did not show any significant change upon annealing, which demonstrated that the spin transport and magnetic properties of these heterostructures remained unaffected even after annealing at a high temperature of 400 °C. Hence, this establishes the high thermal stability of the sputter grown MoS2/CoFeB heterostructures. Thus, this study highlights the important role of MoS2 as an efficient spin current-generating source for spin-orbit torque based magnetic memory applications, given the high-temperature stability and high-quality monolayers of MoS2 and its excellent performance with CoFeB thin films.
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Affiliation(s)
- Nanhe Kumar Gupta
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Amar Kumar
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Lalit Pandey
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Soumyarup Hait
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Vineet Barwal
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Amir Khan
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Vireshwar Mishra
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Nikita Sharma
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Nakul Kumar
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Sujeet Chaudhary
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
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4
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Mallik SK, Padhan R, Sahu MC, Roy S, Pradhan GK, Sahoo PK, Dash SP, Sahoo S. Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS 2 for Brain-Inspired Artificial Learning. ACS Appl Mater Interfaces 2023. [PMID: 37467425 DOI: 10.1021/acsami.3c06336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities toward developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 memtransistors, which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multilevel memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single Field Effect Transistor (FET) device where thermal energy can be ventured to aid the memory functions with multilevel (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way toward reliable data processing and storage using 2D semiconductors with high-packing density arrays for brain-inspired artificial learning.
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Affiliation(s)
- Sameer Kumar Mallik
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Roshan Padhan
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Mousam Charan Sahu
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Suman Roy
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Gopal K Pradhan
- Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar 751024, Odisha, India
| | - Prasana Kumar Sahoo
- Materials Science Centre, Quantum Materials and Device Research Laboratory, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India
| | - Saroj Prasad Dash
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden
| | - Satyaprakash Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
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5
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Luo Z, Song X, Liu X, Lu X, Yao Y, Zeng J, Li Y, He D, Zhao H, Gao L, Yu Z, Niu W, Sun H, Xu Y, Liu S, Qin W, Zhao Q. Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices. Sci Adv 2023; 9:eade9126. [PMID: 37018394 PMCID: PMC10075958 DOI: 10.1126/sciadv.ade9126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/03/2023] [Indexed: 06/19/2023]
Abstract
Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that organic materials host for spintronic applications. Although plenty of efforts have been devoted to studying organic spintronic devices, exploring the role of metal/molecule spinterfaces at two-dimensional limit remains challenging because of excessive disorders and traps at the interfaces. Here, we demonstrate atomically smooth metal/molecule interfaces through nondestructively transferring magnetic electrodes on epitaxial grown single-crystalline layered organic films. Using such high-quality interfaces, we investigate spin injection of spin-valve devices based on organic films of different layers, in which molecules are packed in different manners. We find that the measured magnetoresistance and the estimated spin polarization increase markedly for bilayer devices compared with their monolayer counterparts. These observations reveal the key role of molecular packing on spin polarization, which is supported by density functional theory calculations. Our findings provide promising routes toward designing spinterfaces for organic spintronic devices.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiangxiang Song
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Xiaolong Liu
- School of New Energy, North China Electric Power University, Beijing 102206, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Junpeng Zeng
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yating Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Daowei He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huijuan Zhao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Shujuan Liu
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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6
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Zatko V, Galceran R, Galbiati M, Peiro J, Godel F, Kern LM, Perconte D, Ibrahim F, Hallal A, Chshiev M, Martinez B, Frontera C, Balcells L, Kidambi PR, Robertson J, Hofmann S, Collin S, Petroff F, Martin MB, Dlubak B, Seneor P. Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions. Nano Lett 2023; 23:34-41. [PMID: 36535029 PMCID: PMC10009810 DOI: 10.1021/acs.nanolett.2c03113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 11/24/2022] [Indexed: 06/17/2023]
Abstract
2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.
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Affiliation(s)
- Victor Zatko
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Regina Galceran
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
- CSIC
and BIST, Campus UAB, Catalan Institute
of Nanoscience and Nanotechnology (ICN2), Bellaterra, 08193Barcelona, Spain
| | - Marta Galbiati
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Julian Peiro
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Florian Godel
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Lisa-Marie Kern
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - David Perconte
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Fatima Ibrahim
- Univ.
Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France
| | - Ali Hallal
- Univ.
Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France
| | - Mairbek Chshiev
- Univ.
Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France
- Institut
Universitaire de France, 75231Paris, France
| | - Benjamin Martinez
- Institut
de Ciencia de Materials de Barcelona, ICMAB-CSIC,
Campus UAB, 08193Bellaterra, Spain
| | - Carlos Frontera
- Institut
de Ciencia de Materials de Barcelona, ICMAB-CSIC,
Campus UAB, 08193Bellaterra, Spain
| | - Lluìs Balcells
- Institut
de Ciencia de Materials de Barcelona, ICMAB-CSIC,
Campus UAB, 08193Bellaterra, Spain
| | - Piran R. Kidambi
- Department
of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, Tennessee37212, United States
| | - John Robertson
- Department
of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
| | - Sophie Collin
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Frédéric Petroff
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Marie-Blandine Martin
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Bruno Dlubak
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Pierre Seneor
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
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7
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Thi-Xuan Dang D, Barik RK, Phan MH, Woods LM. Enhanced Magnetism in Heterostructures with Transition-Metal Dichalcogenide Monolayers. J Phys Chem Lett 2022; 13:8879-8887. [PMID: 36125200 DOI: 10.1021/acs.jpclett.2c01925] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties of Fe/WSe2/Pt systems containing pristine, defective, or doped WSe2 monolayers. The proximity effects of the ferromagnetic Fe layer are studied by considering defective and vanadium-doped WSe2 monolayers. All heterostructures are found to be ferromagnetic, and the insertion of the transition-metal dichalcogenide results in a redistribution of spin orientation and an increased density of magnetic atoms due to the magnetized WSe2. There is an increase in the overall total density of states at the Fermi level due to WSe2; however, the transition-metal dichalcogenide may lose its distinct semiconducting properties due to the stronger than van der Waals coupling. Spin-resolved electronic structure properties are linked to larger spin Seebeck coefficients found in heterostructures with WSe2 monolayers.
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Affiliation(s)
- Diem Thi-Xuan Dang
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Ranjan Kumar Barik
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Manh-Huong Phan
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Lilia M Woods
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
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8
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Yang H, Valenzuela SO, Chshiev M, Couet S, Dieny B, Dlubak B, Fert A, Garello K, Jamet M, Jeong DE, Lee K, Lee T, Martin MB, Kar GS, Sénéor P, Shin HJ, Roche S. Two-dimensional materials prospects for non-volatile spintronic memories. Nature 2022; 606:663-73. [PMID: 35732761 DOI: 10.1038/s41586-022-04768-0] [Citation(s) in RCA: 47] [Impact Index Per Article: 23.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Accepted: 04/19/2022] [Indexed: 01/12/2023]
Abstract
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.
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9
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Jena AK, Mallik SK, Sahu MC, Sahoo S, Sahoo AK, Sharma NK, Mohanty J, Gupta SK, Ahuja R, Sahoo S. Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer [Formula: see text]. Sci Rep 2022; 12:2593. [PMID: 35173206 PMCID: PMC8850603 DOI: 10.1038/s41598-022-06346-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2021] [Accepted: 01/20/2022] [Indexed: 11/09/2022] Open
Abstract
Strain-mediated magnetism in 2D materials and dilute magnetic semiconductors hold multi-functional applications for future nano-electronics. Herein, First principles calculations are employed to study the influence of biaxial strain on the magnetic properties of Co-doped monolayer [Formula: see text]. The non-magnetic [Formula: see text] shows ferromagnetic signature upon Co doping due to spin polarization, which is further improved at low compressive (-2 %) and tensile (+2 %) strains. From the PDOS and spin density analysis, the opposite magnetic ordering is found to be favourable under the application of compressive and tensile strains. The double exchange interaction and p-d hybridization mechanisms make Co-doped [Formula: see text] a potential host for magnetism. More importantly, the competition between exchange and crystal field splittings, i.e. ([Formula: see text]), of the Co-atom play pivotal roles in deciding the values of the magnetic moments under applied strain. Micromagnetic simulation reveals, the ferromagnetic behavior calculated from DFT exhibits low-field magnetic reversal (190 Oe). Moreover, the spins of Co-doped [Formula: see text] are slightly tilted from the easy axis orientations showing slanted ferromagnetic hysteresis loop. The ferromagnetic nature of Co-doped [Formula: see text] suppresses beyond [Formula: see text] strain, which is reflected in terms of decrease in the coercivity in the micromagnetic simulation. The understanding of low-field magnetic reversal and spin orientations in Co-doped [Formula: see text] may pave the way for next-generation spintronics and straintronics applications.
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Affiliation(s)
- Anjan Kumar Jena
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Sameer Kumar Mallik
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Mousam Charan Sahu
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Sandhyarani Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Ajit Kumar Sahoo
- Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502284 India
| | - Neha Kapila Sharma
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - J. Mohanty
- Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502284 India
| | - Sanjeev K. Gupta
- Computational Materials and Nanoscience Group, Department of Physics and Electronics, St.Xavier’s College, Ahmedabad, 380009 India
| | - Rajeev Ahuja
- Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 India
| | - Satyaprakash Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
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10
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Abstract
van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.
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Affiliation(s)
- Mauro Och
- Department of Materials, Imperial College London, SW72AZ London, UK.
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, SW72AZ London, UK.
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11
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Zhao S, Li X, Dong B, Wang H, Wang H, Zhang Y, Han Z, Zhang H. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges. Rep Prog Phys 2021; 84:026401. [PMID: 33440363 DOI: 10.1088/1361-6633/abdb98] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, the emerging conceptual valley-related devices have attracted much attention due to the progress on generating, controlling, and detecting the valley degree of freedom in the transition metal dichalcogenide (TMD) monolayers. In general, it is known that achieving valley degree of freedom with long valley lifetime is crucial in the implementation of valleytronic devices. Here, we provide a brief introduction of the basic understandings of valley degree of freedom. We as well review the recent experimental advancement in the modulation of valley degree of freedom. The strategies include optical/magnetic/electric field tuning, moiré patterns, plasmonic metasurface, defects and strain engineering. In addition, we summarize the corresponding mechanisms, which can help to obtain large degree of polarization and long valley lifetimes in monolayer TMDs. Based on these methods, two-dimensional valley-optoelectronic systems based on TMD heterostructures can be constructed, providing opportunities for such as the new paradigm in data processing and transmission. Challenges and perspectives on the development of valleytronics are highlighted as well.
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Affiliation(s)
- Siwen Zhao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Baojuan Dong
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Huide Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Yupeng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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12
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Piquemal-Banci M, Galceran R, Dubois SMM, Zatko V, Galbiati M, Godel F, Martin MB, Weatherup RS, Petroff F, Fert A, Charlier JC, Robertson J, Hofmann S, Dlubak B, Seneor P. Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers. Nat Commun 2020; 11:5670. [PMID: 33168805 PMCID: PMC7652852 DOI: 10.1038/s41467-020-19420-6] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2019] [Accepted: 10/12/2020] [Indexed: 11/09/2022] Open
Abstract
We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal. In particular, by switching the graphene/ferromagnet interaction, spin transport reveals magneto-resistance signal MR > 80% in junctions with low resistance × area products. Descriptions based only on a simple K-point filtering picture (i.e. MR increase with the number of layers) are not sufficient to predict the behavior of our devices. We emphasize that hybridization effects need to be taken into account to fully grasp the spin properties (such as spin dependent density of states) when 2D materials are used as ultimately thin interfaces. While this is only a first demonstration, we thus introduce the fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs.
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Affiliation(s)
- Maëlis Piquemal-Banci
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Regina Galceran
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Simon M-M Dubois
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348, Louvain-la-Neuve, Belgium
| | - Victor Zatko
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Marta Galbiati
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
- Department of Engineering, University of Cambridge, Cambridge, CB21PZ, UK
| | - Robert S Weatherup
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- University of Manchester at Harwell, Diamond Light Source, Didcot, Oxfordshire, OX11 0DE, UK
| | - Frédéric Petroff
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Albert Fert
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348, Louvain-la-Neuve, Belgium
| | - John Robertson
- Department of Engineering, University of Cambridge, Cambridge, CB21PZ, UK
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge, CB21PZ, UK
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
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13
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Khan MF, Rehman S, Rehman MA, Basit MA, Kim DK, Ahmed F, Khalil HMW, Akhtar I, Jun SC. Modulation of Magnetoresistance Polarity in BLG/SL-MoSe 2 Heterostacks. Nanoscale Res Lett 2020; 15:136. [PMID: 32572648 PMCID: PMC7310050 DOI: 10.1186/s11671-020-03365-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Accepted: 06/07/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magnetotransport properties of SVJs are highly influenced by the type of intervening layer (spacer) inserted between the ferromagnetic materials (FMs). In this situation, the spin filtering effect at the interfaces plays a critical role in the observation of the magnetoresistance (MR) of such magnetic structures, which can be improved by using promising hybrid structure. Here, we report MR of bilayer graphene (BLG), single-layer MoSe2 (SL-MoSe2), and BLG/SL-MoSe2 heterostack SVJs. However, before annealing, BLG and SL-MoSe2 SVJs demonstrate positive MR, but after annealing, BLG reverses its polarity while the SL-MoSe2 maintains its polarity and demonstrated stable positive spin polarizations at both interfaces due to meager doping effect of ferromagnetic (FM) contacts. Further, Co/BLG/SL-MoSe2/NiFe determines positive MR, i.e., ~ 1.71% and ~ 1.86% at T = 4 K before and after annealing, respectively. On the contrary, NiFe/BLG/SL-MoSe2/Co SVJs showed positive MR before annealing and subsequently reversed its MR sign after annealing due to the proximity-induced effect of metals doping with graphene. The obtained results can be useful to comprehend the origin of polarity and the selection of non-magnetic material (spacer) for magnetotransport properties. Thus, this study established a new paragon for novel spintronic applications.
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Affiliation(s)
- Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
| | - Shania Rehman
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
| | - Malik Abdul Rehman
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Muhammad Abdul Basit
- Department of Materials Science and Engineering, Institute of Space Technology, Islamabad, 44000, Pakistan
| | - Deok-Kee Kim
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
| | - Faisal Ahmed
- Department of Mechanical Engineering, NUST College of Electrical and Mechanical Engineering, National University of Science and Technology, Islamabad, 44000, Pakistan
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, F1-00076, Aalto, Finland
| | - H M Waseem Khalil
- Department of Electrical Engineering, College of Engineering and Technology, University of Sargodha, Sargodha, Pakistan
| | - Imtisal Akhtar
- Department of Mechanical Engineering, Chung-Ang University, Seoul, South Korea
| | - Seong Chan Jun
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea.
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14
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Liu Y, Zeng C, Zhong J, Ding J, Wang ZM, Liu Z. Spintronics in Two-Dimensional Materials. Nanomicro Lett 2020; 12:93. [PMID: 34138100 PMCID: PMC7770708 DOI: 10.1007/s40820-020-00424-2] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2020] [Accepted: 03/18/2020] [Indexed: 05/30/2023]
Abstract
Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.
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Affiliation(s)
- Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China.
- Shenzhen Research Institute of Central South University, A510a, Virtual University Building, Southern District, High-Tech Industrial Park, Yuehai Street, Nanshan District, Shenzhen, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China.
| | - Cheng Zeng
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Jiahong Zhong
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW, 2006, Australia.
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15
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Champagne A, Dechamps S, Dubois SM, Lherbier A, Nguyen V, Charlier J. Computational Atomistic Modeling in Carbon Flatland and Other 2D Nanomaterials. Applied Sciences 2020; 10:1724. [DOI: 10.3390/app10051724] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
As in many countries, the rise of nanosciences in Belgium has been triggered in the eighties in the one hand, by the development of scanning tunneling and atomic force microscopes offering an unprecedented possibility to visualize and manipulate the atoms, and in the other hand, by the synthesis of nano-objects in particular carbon nanostructures such as fullerene and nanotubes. Concomitantly, the increasing calculating power and the emergence of computing facilities together with the development of DFT-based ab initio softwares have brought to nanosciences field powerful simulation tools to analyse and predict properties of nano-objects. Starting with 0D and 1D nanostructures, the floor is now occupied by the 2D materials with graphene being the bow of this 2D ship. In this review article, some specific examples of 2D systems has been chosen to illustrate how not only density functional theory (DFT) but also tight-binding (TB) techniques can be daily used to investigate theoretically the electronic, phononic, magnetic, and transport properties of these atomically thin layered materials.
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16
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Li G, Wang X, Han B, Zhang W, Qi S, Zhang Y, Qiu J, Gao P, Guo S, Long R, Tan Z, Song XZ, Liu N. Direct Growth of Continuous and Uniform MoS 2 Film on SiO 2/Si Substrate Catalyzed by Sodium Sulfate. J Phys Chem Lett 2020; 11:1570-1577. [PMID: 32013437 DOI: 10.1021/acs.jpclett.9b03879] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Because of its unique electronic band structure, molybdenum disulfide (MoS2) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS2 films on SiO2/Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and Na2SO4 catalysis, realizing the centimeter scale growth of a continuous MoS2 film on SiO2/Si substrates. The as-grown MoS2 film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO2 substrates rather than to interfere with as-grown MoS2. Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm2 V-1 s-1. We believe our method will pave a new way for MoS2 toward real application in modern electronics.
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Affiliation(s)
- Guanmeng Li
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , China
| | - Bo Han
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Shuyan Qi
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Yan Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Jiakang Qiu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Shaoshi Guo
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , China
| | - Zhenquan Tan
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
| | - Xue-Zhi Song
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
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17
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Zatko V, Galbiati M, Dubois SMM, Och M, Palczynski P, Mattevi C, Brus P, Bezencenet O, Martin MB, Servet B, Charlier JC, Godel F, Vecchiola A, Bouzehouane K, Collin S, Petroff F, Dlubak B, Seneor P. Band-Structure Spin-Filtering in Vertical Spin Valves Based on Chemical Vapor Deposited WS 2. ACS Nano 2019; 13:14468-14476. [PMID: 31774276 DOI: 10.1021/acsnano.9b08178] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on spin transport in WS2-based 2D-magnetic tunnel junctions (2D-MTJs), unveiling a band structure spin filtering effect specific to the transition metal dichalcogenides (TMDCs) family. WS2 mono-, bi-, and trilayers are derived by a chemical vapor deposition process and further characterized by Raman spectroscopy, atomic force microscopy (AFM), and photoluminescence spectroscopy. The WS2 layers are then integrated in complete Co/Al2O3/WS2/Co MTJ hybrid spin-valve structures. We make use of a tunnel Co/Al2O3 spin analyzer to probe the extracted spin-polarized current from the WS2/Co interface and its evolution as a function of WS2 layer thicknesses. For monolayer WS2, our technological approach enables the extraction of the largest spin signal reported for a TMDC-based spin valve, corresponding to a spin polarization of PCo/WS2 = 12%. Interestingly, for bi- and trilayer WS2, the spin signal is reversed, which indicates a switch in the mechanism of interfacial spin extraction. With the support of ab initio calculations, we propose a model to address the experimentally measured inversion of the spin polarization based on the change in the WS2 band structure while going from monolayer (direct bandgap) to bilayer (indirect bandgap). These experiments illustrate the rich potential of the families of semiconducting 2D materials for the control of spin currents in 2D-MTJs.
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Affiliation(s)
- Victor Zatko
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Marta Galbiati
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Simon Mutien-Marie Dubois
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
- Institute of Condensed Matter and Nanosciences , Université catholique de Louvain , B-1348 Louvain-la-Neuve , Belgium
| | - Mauro Och
- Department of Materials , Imperial College London , Exhibition Road , London SW7 2AZ , U.K
| | - Pawel Palczynski
- Department of Materials , Imperial College London , Exhibition Road , London SW7 2AZ , U.K
| | - Cecilia Mattevi
- Department of Materials , Imperial College London , Exhibition Road , London SW7 2AZ , U.K
| | - Pierre Brus
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
- Thales Research and Technology , 1 avenue Augustin Fresnel , 91767 Palaiseau , France
| | - Odile Bezencenet
- Thales Research and Technology , 1 avenue Augustin Fresnel , 91767 Palaiseau , France
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Bernard Servet
- Thales Research and Technology , 1 avenue Augustin Fresnel , 91767 Palaiseau , France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences , Université catholique de Louvain , B-1348 Louvain-la-Neuve , Belgium
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Aymeric Vecchiola
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Karim Bouzehouane
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Sophie Collin
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Frédéric Petroff
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
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18
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Zhang W, Wong PKJ, Zhou X, Rath A, Huang Z, Wang H, Morton SA, Yuan J, Zhang L, Chua R, Zeng S, Liu E, Xu F, Chua DHC, Feng YP, van der Laan G, Pennycook SJ, Zhai Y, Wee ATS. Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy. ACS Nano 2019; 13:2253-2261. [PMID: 30775909 DOI: 10.1021/acsnano.8b08926] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapor-deposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe2. We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe2 interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d-d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe2 interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.
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Affiliation(s)
- Wen Zhang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Ping Kwan Johnny Wong
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Xiaochao Zhou
- School of Physics , Southeast University , Nanjing 211189 , China
| | - Ashutosh Rath
- Department of Materials Science and Engineering , National University of Singapore , Singapore 117575 , Singapore
| | - Zhaocong Huang
- School of Physics , Southeast University , Nanjing 211189 , China
| | - Hongyu Wang
- Department of Materials Science and Engineering , National University of Singapore , Singapore 117575 , Singapore
| | - Simon A Morton
- Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Jiaren Yuan
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Lei Zhang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Rebekah Chua
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 Singapore
| | - Shengwei Zeng
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUSSNI-NanoCore , National University of Singapore , 5A Engineering Drive 1 , Singapore 117411 , Singapore
| | - Er Liu
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Feng Xu
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Daniel H C Chua
- Department of Materials Science and Engineering , National University of Singapore , Singapore 117575 , Singapore
| | - Yuan Ping Feng
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | | | - Stephen J Pennycook
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 6 Science Drive 2 , Singapore 117546 , Singapore
- Department of Materials Science and Engineering , National University of Singapore , Singapore 117575 , Singapore
| | - Ya Zhai
- School of Physics , Southeast University , Nanjing 211189 , China
| | - Andrew T S Wee
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 6 Science Drive 2 , Singapore 117546 , Singapore
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19
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Wang F, Gao T, Zhang Q, Hu ZY, Jin B, Li L, Zhou X, Li H, Van Tendeloo G, Zhai T. Liquid-Alloy-Assisted Growth of 2D Ternary Ga 2 In 4 S 9 toward High-Performance UV Photodetection. Adv Mater 2019; 31:e1806306. [PMID: 30411824 DOI: 10.1002/adma.201806306] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2018] [Revised: 10/16/2018] [Indexed: 05/23/2023]
Abstract
2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga2 In4 S9 flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga2 In4 S9 flakes display outstanding UV detection ability (R λ = 111.9 A W-1 , external quantum efficiency = 3.85 × 104 %, and D* = 2.25 × 1011 Jones@360 nm) with a fast response speed (τring ≈ 40 ms and τdecay ≈ 50 ms). In addition, Ga2 In4 S9 -based phototransistors exhibit a responsivity of ≈104 A W-1 @360 nm above the critical back-gate bias of ≈0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga2 In4 S9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Ting Gao
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Qi Zhang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Xiasha Higher Education Zone, Hangzhou, Zhejiang, 310018, P. R. China
| | - Zhi-Yi Hu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, P. R. China
- NRC (Nanostructure Research Centre), Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, P. R. China
| | - Bao Jin
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Liang Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Gustaaf Van Tendeloo
- NRC (Nanostructure Research Centre), Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, P. R. China
- EMAT (Electron Microscopy for Materials Science), University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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20
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Khan MF, Kim H, Nazir G, Jung S, Eom J. Layer dependent magnetoresistance of vertical MoS 2 magnetic tunnel junctions. Nanoscale 2018; 10:16703-16710. [PMID: 30155548 DOI: 10.1039/c8nr04518f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Spin polarization of electrons through transition metal dichalcogenides (TMDs) from ferromagnetic metals (FMs) is a fascinating phenomenon in condensed matter physics. The spin polarized current makes high- and low-resistance states in FM/TMDs/FM junctions depending on magnetization alignment of FM electrodes. We have manifested vertical spin valve junctions by incorporating MoS2 layers of different thicknesses by an ultraclean fabrication method. The current-voltage (I-V) characteristics show the ohmic contact behavior, indicating that mono-, bi-, and tri-layer MoS2 work as conducting thin film. In contrast, FM/multilayer MoS2/FM junction shows non-linear I-V characteristics and the junction resistance increases as the temperature is lowered, indicating that multilayer MoS2 provides a tunneling barrier between FM electrodes. We have found that the magnetoresistance (MR) ratio increases gradually as the thickness of the MoS2 layer is increased. Our investigation will provide a guide to make an optimal choice in the development of magnetic tunnel junctions with two-dimensional layered TMDs.
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Affiliation(s)
- Muhammad Farooq Khan
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul 05006, Korea.
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21
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Galbiati M, Vecchiola A, Mañas-Valero S, Canet-Ferrer J, Galceran R, Piquemal-Banci M, Godel F, Forment-Aliaga A, Dlubak B, Seneor P, Coronado E. A Local Study of the Transport Mechanisms in MoS 2 Layers for Magnetic Tunnel Junctions. ACS Appl Mater Interfaces 2018; 10:30017-30021. [PMID: 30079721 DOI: 10.1021/acsami.8b08853] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
MoS2-based vertical spintronic devices have attracted an increasing interest thanks to theoretical predictions of large magnetoresistance signals. However, experimental performances are still far from expectations. Here, we carry out the local electrical characterization of thin MoS2 flakes in a Co/Al2O3/MoS2 structure through conductive tip AFM measurements. We show that thin MoS2 presents a metallic behavior with a strong lateral transport contribution that hinders the direct tunnelling through thin layers. Indeed, no resistance dependence is observed with the flake thickness. These findings reveal a spin depolarization source in the MoS2-based spin valves, thus pointing to possible solutions to improve their spintronic properties.
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Affiliation(s)
- Marta Galbiati
- Instituto de Ciencia Molecular , Universitat de València , Catedrático José Beltrán Martínez n° 2 , Paterna 46980 , Spain
| | - Aymeric Vecchiola
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular , Universitat de València , Catedrático José Beltrán Martínez n° 2 , Paterna 46980 , Spain
| | - Josep Canet-Ferrer
- Instituto de Ciencia Molecular , Universitat de València , Catedrático José Beltrán Martínez n° 2 , Paterna 46980 , Spain
- ICFO-Institut de Ciències Fotòniques , The Barcelona Institute of Science and Technology , Barcelona 08860 , Spain
| | - Regina Galceran
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Maëlis Piquemal-Banci
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Alicia Forment-Aliaga
- Instituto de Ciencia Molecular , Universitat de València , Catedrático José Beltrán Martínez n° 2 , Paterna 46980 , Spain
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales , Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Eugenio Coronado
- Instituto de Ciencia Molecular , Universitat de València , Catedrático José Beltrán Martínez n° 2 , Paterna 46980 , Spain
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22
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Piquemal-Banci M, Galceran R, Godel F, Caneva S, Martin MB, Weatherup RS, Kidambi PR, Bouzehouane K, Xavier S, Anane A, Petroff F, Fert A, Dubois SMM, Charlier JC, Robertson J, Hofmann S, Dlubak B, Seneor P. Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride. ACS Nano 2018; 12:4712-4718. [PMID: 29697954 DOI: 10.1021/acsnano.8b01354] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.
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Affiliation(s)
- Maëlis Piquemal-Banci
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Regina Galceran
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Sabina Caneva
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Marie-Blandine Martin
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Robert S Weatherup
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Piran R Kidambi
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Karim Bouzehouane
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Stephane Xavier
- Thales Research and Technology , 1 avenue Augustin Fresnel , 91767 Palaiseau , France
| | - Abdelmadjid Anane
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Frédéric Petroff
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Albert Fert
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Simon Mutien-Marie Dubois
- Institute of Condensed Matter and Nanosciences (IMCN) , Université Catholique de Louvain , B-1348 Louvain-la-Neuve , Belgium
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN) , Université Catholique de Louvain , B-1348 Louvain-la-Neuve , Belgium
| | - John Robertson
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , Cambridge CB21PZ , United Kingdom
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Univ Paris-Sud, Université Paris-Saclay , 91767 Palaiseau , France
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23
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Rotjanapittayakul W, Pijitrojana W, Archer T, Sanvito S, Prasongkit J. Spin injection and magnetoresistance in MoS 2-based tunnel junctions using Fe 3Si Heusler alloy electrodes. Sci Rep 2018; 8:4779. [PMID: 29556015 DOI: 10.1038/s41598-018-22910-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2017] [Accepted: 03/01/2018] [Indexed: 11/21/2022] Open
Abstract
Recently magnetic tunnel junctions using two-dimensional MoS2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green’s function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.
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