Rational Design of New Conjugated Polymers with Main Chain Chirality for Efficient Optoelectronic Devices: Carbo[6]Helicene and Indacenodithiophene Copolymers as Model Compounds

The unique properties of conjugated polymers (CPs) in various optoelectronic applications are mainly attributed to their different self-assembly processes and superstructures. Various methods are utilized to tune and control CP structure and properties with less attention paid to the use of chirality. CPs with main chain chirality are rare and their microscopic and macroscopic properties are still unknown. In this work, the first experimental results are provided along these lines by synthesizing a series of racemic and enantiopure CPs containing statistical and alternating carbo[6]helicene and indacenodithiophene moieties and evaluating their microscopic (optical, energy levels) and macroscopic properties (hole mobilities, photovoltaic performance). It is demonstrated that a small statistical insertion of either the racemic or enantiopure helicene into the polymer backbone finely tunes the microscopic and macroscopic properties as a function of the statistical content. The microscopic properties of the enantiopure versus the racemic polymers with the same helicene loading remain similar. On the contrary, the macroscopic properties, and more interestingly those between the two enantiomeric forms, are altered as a function of the statistical content. Once incorporated into a solar cell device, these chiral CPs display better performance in their enantiopure versus racemic forms.

Effect of Single-Crystal TiO2/Perovskite Band Alignment on the Kinetics of Electron Extraction

The kinetics of electron extraction at the electron transfer layer/perovskite interface strongly affects the efficiency of a perovskite solar cell. By combining transient absorption and time-resolved photoluminescence spectroscopy, the electron extraction process between FA0.83Cs0.17Pb(I0.83Br0.17)3 and TiO2 single crystals with different orientations of (100), (110), and (111) were probed from subpicosecond to several hundred nanoseconds. It was revealed that the band alignment between the constituents influenced the relative electron extraction process. TiO2(100) showed the fastest overall and hot electron transfer, owing to the largest conduction band and Fermi level offset compared to FA0.83Cs0.17Pb(I0.83Br0.17)3. It was found that an early electron accumulation in these systems can have an influence on the following electron extraction on the several nanosecond time scale. Furthermore, the existence of a potential barrier at the TiO2/perovskite interface was also revealed by performing excitation fluence-dependent measurements.

Characterizing Spatial and Energetic Distributions of Trap States Toward Highly Efficient Perovskite Photovoltaics

Due to their greater opt electric performance, perovskite photovoltaics (PVs) present huge potential to be commercialized. Perovskite PV's high theoretical efficiency expands the available development area. The passivation of defects in perovskite films is crucial for approaching the theoretical limit. In addition to creating efficient passivation techniques, it is essential to direct the passivation approach by getting precise and real-time information on the trap states through measurements. Therefore, it is necessary to establish quantitative characterization methods for the trap states in energy and 3D spaces. The authors cover the characterization of the spatial and energy distributions of trap states in this article with an eye toward high-efficiency perovskite photovoltaics. After going over the strategies that have been created for characterizing and evaluating trap states, the authors will concentrate on how to direct the creative development of characterization techniques for trap states assessment and highlight the opportunities and challenges of future development. The 3D space and energy distribution mappings of trap states are anticipated to be realized. The review will give key guiding importance for further approaching the theoretical efficiency of perovskite photovoltaics, offering some future research direction and technological assistance for the development of appropriate targeted passivation technologies.

Metal Sulfide Ion Exchangers: High Acid Stability of Na2xMg2y-xSn4-yS8 (NMS) and Topotactic Conversion to 2D Solid Acids with Semiconducting Character

Metal sulfide ion exchange materials (MSIEs) are of interest for nuclear waste remediation applications. We report the high stability of two structurally related metal sulfide ion exchange materials, Na2xMg2y-xSn4-yS8 (Mg-NMS) and Na2SnS3 (Na-NMS), in strongly acid media, in addition to the preparation of Na2xNi2y-xSn4-yS8 (Ni-NMS). Their formation progress during synthesis is studied with in-situ methods, with the target phases appearing in <15 min, reaction completion in <12 h, and high yields (75-80%). Upon contact with nitric or hydrochloric acid, these materials topotactically exchange Na+ for H+, proceeding in a stepwise protonation pathway for Na5.33Sn2.67S8. Na-NMS is stable in 2 M HNO3 and Mg-NMS is stable in 4 M HNO3 for up to 4 h, while both NMS materials are stable in 6 M HCl for up to 4 days. However, the treatment of Mg-NMS and Na-NMS with 2-6 M H2SO4 reveals a much slower protonation process since after 4 h of contact both NMS and HMS are present in the solution. The resultant protonated materials, H2xMg2y-xSn4-yS8 and H4x[(HyNay-1)1.33xSn4--1.33x]S8, are themselves solid acids and readily react with and intercalate a variety of organic amines, where the band gap of the resultant adduct is influenced by amine choice and can be tuned within the range of 1.88(5)-2.27(5) eV. The work function energy values for all materials were extracted from photoemission yield spectroscopy in air (PYSA) measurements and range from 5.47 (2) to 5.76 (2) eV, and the relative band alignments of the materials are discussed. DFT calculations suggest that the electronic structure of Na2MgSn3S8 and H2MgSn3S8 makes them indirect gap semiconductors with multi-valley band edges, with carriers confined to the [MgSn3S8]2- layers. Light electron effective masses indicate high electron mobilities.

Synergistic Effect of Precursor and Interface Engineering Enables High Efficiencies in FAPbI3 Perovskite Solar Cells

Formamidinium lead iodide (FAPbI3)-based perovskite solar cells have gained immense popularity over the last few years within the perovskite research community due to their incredible opto-electronic properties and the record power conversion efficiencies (PCEs) achieved by the solar cells. However, FAPbI3 is vulnerable to phase transitions even at room temperature, which cause structural instability and eventual device failure during operation. We performed post-treatment of the FAPbI3 surface with octyl ammonium iodide (OAI) in order to stabilize the active phase and preserve the crystal structure of FAPbI3. The formation of a 2D perovskite at the interface depends on the stoichiometry of the precursor. By optimizing the precursor stoichiometry and the concentration of OAI, we observe a synergistic effect, which results in improved power conversion efficiencies, reaching the best values of 22% on a glass substrate. Using physical and detailed optical analysis, we verify the presence of the 2D layer on the top of the 3D surface of the perovskite film.

Cubic Stuffed-Diamond Semiconductors LiCu3TiQ4 (Q = S, Se, and Te)

Lithium chalcogenides have been understudied, owing to the difficulty in managing the chemical reactivity of lithium. These materials are of interest as potential ion conductors and thermal neutron detectors. In this study, we describe three new cubic lithium copper chalcotitanates that crystallize in the P4̅3m space group. LiCu₃TiS₄, a = 5.5064(6) Å, and LiCu₃TiSe₄, a = 5.7122(7) Å, represent two members of a new stuffed diamond-type crystal structure, while LiCu₃TiTe₄, a = 5.9830(7) Å crystallized into a similar structure exhibiting lithium and copper mixed occupancy. These structures can be understood as hybrids of the zinc-blende and sulvanite structure types. In situ powder X-ray diffraction was utilized to construct a "panoramic" reaction map for the preparation of LiCu₃TiTe₄, facilitating the design of a rational synthesis and uncovering three new transient phases. LiCu₃TiS₄ and LiCu₃TiSe₄ are thermally stable up to 1000 °C under vacuum, while LiCu₃TiTe₄ partially decomposes when slowly cooled to 400 °C. Density functional theory calculations suggest that these compounds are indirect band gap semiconductors. The measured work functions are 4.77(5), 4.56(5), and 4.69(5) eV, and the measured band gaps are 2.23(5), 1.86(5), and 1.34(5) eV for the S, Se, and Te analogues, respectively.

Mixed Anion Semiconductor In8S2.82Te6.18(Te2)3

The new heteroanionic compound In₈S_2.82Te_6.18(Te₂)₃ crystallizes in the monoclinic space group C2/c with lattice parameters a = 14.2940(6) Å, b = 14.3092(4) Å, c = 14.1552(6) Å, and β = 90.845(3)°. The three-dimensional (3D) framework of In₈S_2.82Te_6.18(Te₂)₃ is composed of a complex 3D network of corner-connected InQ₄ tetrahedra with three Te₂^2- dumbbell dimers per formula unit. The optical bandgap is 1.12(2) eV and the work function is 5.15(5) eV. First-principles electronic structure calculations using density functional theory (DFT) indicate that this material has potential as a p-type thermoelectric material as it is a narrow bandgap semiconductor, incorporates several heavy elements, and has multiple overlapping bands near the valence band maximum.

Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films

Phosphides are interesting candidates for hole transport materials and p-type transparent conducting applications, capable of achieving greater valence band dispersion than their oxide counterparts due to the higher lying energy and increased size of the P 3p orbital. After computational identification of the indirect-gap semiconductor CaCuP as a promising candidate, we now report reactive sputter deposition of phase-pure p-type CaCuP thin films. Their intrinsic hole concentration and hole mobility exceed 1 × 10²⁰ cm⁻³ and 35 cm² V⁻¹ s⁻¹ at room temperature, respectively. Transport calculations indicate potential for even higher mobilities. Copper vacancies are identified as the main source of conductivity, displaying markedly different behaviour compared to typical p-type transparent conductors, leading to improved electronic properties. The optical transparency of CaCuP films is lower than expected from first principles calculations of phonon-mediated indirect transitions. This discrepancy could be partly attributed to crystalline imperfections within the films, increasing the strength of indirect transitions. We determine the transparent conductor figure of merit of CaCuP films as a function of composition, revealing links between stoichiometry, crystalline quality, and opto-electronic properties. These findings provide a promising initial assessment of the viability of CaCuP as a p-type transparent contact.

We synthesize air-stable, p-type CaCuP thin films with high hole concentration and high hole mobility as potential p-type transparent conductors. We study their optoelectronic properties in detail by advanced experimental and computational methods.

Thick-Layer Lead Iodide Perovskites with Bifunctional Organic Spacers Allylammonium and Iodopropylammonium Exhibiting Trap-State Emission

The nature of the organic cation in two-dimensional (2D) hybrid lead iodide perovskites tailors the structural and technological features of the resultant material. Herein, we present three new homologous series of (100) lead iodide perovskites with the organic cations allylammonium (AA) containing an unsaturated C═C group and iodopropylammonium (IdPA) containing iodine on the organic chain: (AA)₂MA_n-1Pb_nI_3n+1 (n = 3-4), [(AA)_x(IdPA)_1-x]₂MA_n-1Pb_nI_3n+1 (n = 1-4), and (IdPA)₂MA_n-1Pb_nI_3n+1 (n = 1-4), as well as their perovskite-related substructures. We report the in situ transformation of AA organic layers into IdPA and the incorporation of these cations simultaneously into the 2D perovskite structure. Single-crystal X-ray diffraction shows that (AA)₂MA₂Pb₃I₁₀ crystallizes in the space group P2₁/c with a unique inorganic layer offset (0, <1/2), comprising the first example of n = 3 halide perovskite with a monoammonium cation that deviates from the Ruddlesden-Popper (RP) halide structure type. (IdPA)₂MA₂Pb₃I₁₀ and the alloyed [(AA)_x(IdPA)_1-x]₂MA₂Pb₃I₁₀ crystallize in the RP structure, both in space group P2₁/c. The adjacent I···I interlayer distance in (AA)₂MA₂Pb₃I₁₀ is ∼5.6 Å, drawing the [Pb₃I₁₀]^4- layers closer together among all reported n = 3 RP lead iodides. (AA)₂MA₂Pb₃I₁₀ presents band-edge absorption and photoluminescence (PL) emission at around 2.0 eV that is slightly red-shifted in comparison to (IdPA)₂MA₂Pb₃I₁₀. The band structure calculations suggest that both (AA)₂MA₂Pb₃I₁₀ and (IdPA)₂MA₂Pb₃I₁₀ have in-plane effective masses around 0.04m₀ and 0.08m₀, respectively. IdPA cations have a greater dielectric contribution than AA. The excited-state dynamics investigated by transient absorption (TA) spectroscopy reveal a long-lived (∼100 ps) trap state ensemble with broad-band emission; our evidence suggests that these states appear due to lattice distortions induced by the incorporation of IdPA cations.

Room Temperature Enhancement of Electronic Materials by Superacid Analogues

Treatment with the superacid bis(trifluoromethanesulfonyl)amide (sometimes known as TFSA, TFSI, or HNTf₂) enhances the properties of a wide range of optoelectronic materials, resulting in longer effective carrier lifetimes and higher photoluminescence quantum yields. We have conducted a multimaterial study treating both crystalline silicon and transition metal dichalcogenide (TMDC) monolayers and few-layer flakes with solutions formed from TFSA and a range of compounds with related chemical structures with different Lewis acidities, in order to elucidate the factors underpinning the TFSA-related class of enhancement treatments. We adopt dichloromethane (DCM) as a common solvent as it provides good results at room temperature and is potentially less hazardous than TFSA-dichloroethane (DCE) heated to ∼100 °C, which has been used previously. Kelvin probe experiments on silicon demonstrate that structurally similar chemicals give passivating films with substantially different charge levels, with the higher levels of charge associated with the presence of CF₃SO₂ groups resulting in longer effective lifetimes due to an enhancement in field-effect passivation. Treatment with all analogue solutions used results in enhanced photoluminescence in MoS₂ and WS₂ compared to untreated controls. Importantly we find that MoS₂ and WS₂ can be enhanced by analogues to TFSA that lack sulfonyl groups, meaning an alternative mechanism to that proposed in computational reports for TFSA enhancement must apply.

Electronic properties of metal halide perovskites and their interfaces: the basics

We have witnessed tremendous progress of metal halide perovskite (MHP)-based optoelectronic devices, especially in the field of photovoltaics. Despite intensive research in the past few years, questions still remain regarding their fundamental optoelectronic properties, among which the electronic properties exhibit an interplay of numerous phenomena that deserve serious scrutiny. In this Focus article, we aim to provide a contemporary understanding of the unique electronic properties that has been resolved by the community. First introducing some of the basic concepts established in semiconductor physics, the intrinsic and extrinsic electronic properties of the MHPs are disentangled and explained. With this, the complex interplay of interface-, dopant-, and surface state-induced electronic states in determining the electrostatic landscape in the material can be comprehended, and the energy level alignment in device architectures more reliably assessed.

1,10-Phenanthroline as an Efficient Bifunctional Passivating Agent for MAPbI3 Perovskite Solar Cells

Passivation is one of the most promising concepts to heal defects created at the surface and grain boundaries of polycrystalline perovskite thin films, which significantly deteriorate the photovoltaic performance and stability of corresponding devices. Here, 1,10-phenanthroline, known as a bidentate chelating ligand, is implemented between the methylammonium lead iodide (MAPbI₃) film and the hole-transport layer for both passivating the lead-based surface defects (undercoordinated lead ions) and converting the excess/unreacted lead iodide (PbI₂) buried at interfaces, which is problematic for the long-term stability, into "neutralized" and beneficial species (PbI₂(1,10-phen)_x, x = 1, 2) for efficient hole transfer at the modified interface. The defect healing ability of 1,10-phenanthroline is verified with a set of complementary techniques including photoluminescence (steady-state and time-resolved), space-charge-limited current (SCLC) measurements, light intensity dependent JV measurements, and Fourier-transform photocurrent spectroscopy (FTPS). In addition to these analytical methods, we employ advanced X-ray scattering techniques, nano-Fourier transform infrared (nano-FTIR) spectroscopy, and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) to further analyze the structure and chemical composition at the perovskite surface after treatment at nanoscale spatial resolution. On the basis of our experimental results, we conclude that 1,10-phenanthroline treatment induces the formation of different morphologies with distinct chemical compositions on the surface of the perovskite film such that surface defects are effectively passivated, and excess/unreacted PbI₂ is converted into beneficial complex species at the modified interface. As a result, an improved power conversion efficiency (20.16%) and significantly more stable unencapsulated perovskite solar cells are obtained with the 1,10-phenanthroline treatment compared to the MAPbI₃ reference device (18.03%).

Tunable Broad Light Emission from 3D "Hollow" Bromide Perovskites through Defect Engineering

Hybrid halide perovskites consisting of corner-sharing metal halide octahedra and small cuboctahedral cages filled with counter cations have proven to be prominent candidates for many high-performance optoelectronic devices. The stability limits of their three-dimensional perovskite framework are defined by the size range of the cations present in the cages of the structure. In some cases, the stability of the perovskite-type structure can be extended even when the counterions violate the size and shape requirements, as is the case in the so-called "hollow" perovskites. In this work, we engineered a new family of 3D highly defective yet crystalline "hollow" bromide perovskites with general formula (FA)_1-x(en)_x(Pb)_1-0.7x(Br)_3-0.4x (FA = formamidinium (FA⁺), en = ethylenediammonium (en²⁺), x = 0-0.44). Pair distribution function analysis shed light on the local structural coherence, revealing a wide distribution of Pb-Pb distances in the crystal structure as a consequence of the Pb/Br-deficient nature and en inclusion in the lattice. By manipulating the number of Pb/Br vacancies, we finely tune the optical properties of the pristine FAPbBr₃ by blue shifting the band gap from 2.20 to 2.60 eV for the x = 0.42 en sample. A most unexpected outcome was that at x> 0.33 en incorporation, the material exhibits strong broad light emission (1% photoluminescence quantum yield (PLQY)) that is maintained after exposure to air for more than a year. This is the first example of strong broad light emission from a 3D hybrid halide perovskite, demonstrating that meticulous defect engineering is an excellent tool for customizing the optical properties of these semiconductors.

Electronic Structure of the CdS/Cu(In,Ga)Se2 Interface of KF- and RbF-Treated Samples by Kelvin Probe and Photoelectron Yield Spectroscopy

Ambient-pressure Kelvin probe and photoelectron yield spectroscopy methods were employed to investigate the impact of the KF and RbF postdeposition treatments (KF-PDT, RbF-PDT) on the electronic features of Cu(In,Ga)Se₂ (CIGSe) thin films and the CdS/CIGSe interface in a CdS thickness series that has been sequentially prepared during the chemical bath deposition (CBD) process depending on the deposition time. We observe distinct features correlated to the CBD-CdS growth stages. In particular, we find that after an initial CBD etching stage, the valence band maximum (VBM) of the CIGSe surface is significantly shifted (by 180-620 mV) toward the Fermi level. However, VBM positions at the surface of the CIGSe are still much below the VBM of the CIGSe bulk. The CIGSe surface band gap is found to depend on the type of postdeposition treatment, showing values between 1.46 and 1.58 eV, characteristic for a copper-poor CIGSe surface composition. At the CdS/CIGSe interface, the lowest VBM discontinuity is observed for the RbF-PDT sample. At this interface, a thin layer with a graded band gap is found. We also find that K and Rb act as compensating acceptors in the CdS layer. Detailed energy band diagrams of the CdS/CIGSe heterostructures are proposed.

Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl3 Perovskite Semiconductor

The detection of γ-rays at room temperature with high-energy resolution using semiconductors is one of the most challenging applications. The presence of even the smallest amount of defects is sufficient to kill the signal generated from γ-rays which makes the availability of semiconductors detectors a rarity. Lead halide perovskite semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties and are poised to strongly impact applications in photoelectric conversion/detection. Here we demonstrate for the first time that large size single crystals of the all-inorganic perovskite CsPbCl₃ semiconductor can function as a high-performance detector for γ-ray nuclear radiation at room temperature. CsPbCl₃ is a wide-gap semiconductor with a bandgap of 3.03 eV and possesses a high effective atomic number of 69.8. We identified the two distinct phase transitions in CsPbCl₃, from cubic (Pm-3m) to tetragonal (P4/mbm) at 325 K and finally to orthorhombic (Pbnm) at 316 K. Despite crystal twinning induced by phase transitions, CsPbCl₃ crystals in detector grade can be obtained with high electrical resistivity of ∼1.7 × 10⁹ Ω·cm. The crystals were grown from the melt with volume over several cubic centimeters and have a low thermal conductivity of 0.6 W m^-1 K^-1. The mobilities for electron and hole carriers were determined to ∼30 cm²/(V s). Using photoemission yield spectroscopy in air (PYSA), we determined the valence band maximum at 5.66 ± 0.05 eV. Under γ-ray exposure, our Schottky-type planar CsPbCl₃ detector achieved an excellent energy resolution (∼16% at 122 keV) accompanied by a high figure-of-merit hole mobility-lifetime product (3.2 × 10^-4 cm²/V) and a long hole lifetime (16 μs). The results demonstrate considerable defect tolerance of CsPbCl₃ and suggest its strong potential for γ-radiation and X-ray detection at room temperature and above.

Water Adsorption Enhances Electrical Conductivity in Transparent P-Type CuI

CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a 2-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 h, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. On the basis of the large intragrain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.

Growth mechanism of CH3NH3I in a vacuum processed perovskite

In the field of halide perovskite research, the growth of high quality films has been a critical issue. Among the reported growth methods, vacuum processes have attracted much attention due to their accurate controllability and high reproducibility, as proven in the manufacture of vacuum deposited organic-light-emitting-diode industry. In a vacuum process, the major difficulty for growing a perovskite film is control of a precursor, methylammonium iodide (MAI), originating from its uncontrollable behavior i.e., a high working pressure and poor adsorption characteristics. Thus, it is crucial to understand the growth mechanism of MAI vapor for the successful application of vacuum processes in the growth of halide perovskite films. In this paper, we report the growth mechanism and deposition kinetics of MAI in a vacuum. Unlike that of conventional materials evaporated in a vacuum, the deposition rate of MAI was found to be much faster on the reactive surface, PbI₂, compared to other non-reactive materials. Surprisingly, a very thin (2 nm-thick) PbI₂ layer increased the initial growth rate of MAI 2.7-fold. Based on the real-time monitored data from a quartz microbalance and surface study, we suggest dipole-induced adsorption as the MAI growth mechanism on PbI₂ and the perovskite in the vacuum process. We believe that this work will provide meaningful insight into film growth in vacuum processed perovskites.

Water-Stable 1D Hybrid Tin(II) Iodide Emits Broad Light with 36% Photoluminescence Quantum Efficiency

The optical and light emission properties of tin and lead halide perovskites are remarkable because of the robust room-temperature (RT) performance, broad wavelength tunability, high efficiency, and good quenching resistance to defects. These highly desirable attributes promise to transform current light-emitting devices, phosphors, and lasers. One disadvantage in most of these materials is the sensitivity to moisture. Here, we report a new air-stable one-dimensional (1D) hybrid lead-free halide material (DAO)Sn₂I₆ (DAO, 1,8-octyldiammonium) that is resistant to water for more than 15 h. The material exhibits a sharp optical absorption edge at 2.70 eV and a strong broad orange light emission centered at 634 nm, with a full width at half-maximum (fwhm) of 142 nm (0.44 eV). The emission has a long photoluminescence (PL) lifetime of 582 ns, while the intensity is constant over a very broad temperature range (145-415 K) with a photoluminescence quantum yield (PLQY) of at least 20.3% at RT. Above 415 K the material undergoes a structural phase transition from monoclinic (C2/c) to orthorhombic (Ibam) accompanied by a red shift in the band gap and a quench in the photoluminescence emission. Density functional theory calculations support the trend in the optical properties and the 1D electronic nature of the structure, where the calculated carrier effective masses along the inorganic chain are significantly lower than those perpendicular to the chain. Thin films of the compound readily fabricated from solutions exhibit the same optical properties, but with improved PLQY of 36%, for a 60 nm thick film, among the highest reported for lead-free low-dimensional 2D and 1D perovskites and metal halides.

Interfacial electronic features in methyl-ammonium lead iodide and p-type oxide heterostructures: new insights for inverted perovskite solar cells

First-principles simulations unveil the interface electronic structures of MAPI/NiO and MAPI/CuGaO₂ heterojunctions in inverted perovskite solar cells.

Effect of Metal Electrodes on Aging-Induced Performance Recovery in Perovskite Solar Cells

For commercialization of perovskite solar cells (PSCs), it is important to substitute the alternative electrode for Au to decrease the unit cost. From the early stage, Ag exhibits a potential to be a good counter electrode in PSCs; however, there is an abnormal s-shaped J-V curve with the Ag electrode, and it is recovered as time passes. The perception of the aging-induced recovery process and refutation of the raised stability issues are required for commercial application of Ag electrodes. Herein, we compared the aging effect of PSCs with Ag and Au electrodes and found that only devices with Ag electrodes have a dramatical aging-induced recovery process. We observed the change of photoelectronic properties only in the devices with Ag electrodes as time passes, which mainly contributes to recovery of the s-shaped J-V curve. We verified the work function change of an aged Ag electrode and its mechanism by photoelectron spectroscopy analysis. By comparing the light stability under 1 sun intensity illumination, we can assure the practical stability of Ag electrodes in case of being encapsulated. This work suggests the profound understanding of the aging-induced recovery process of PSCs and the possibility of commercial application of Ag electrodes.

Origin of Open-Circuit Voltage Losses in Perovskite Solar Cells Investigated by Surface Photovoltage Measurement

Increasing the open-circuit voltage (V_oc) is one of the key strategies for further improvement of the efficiency of perovskite solar cells. It requires fundamental understanding of the complex optoelectronic processes related to charge carrier generation, transport, extraction, and their loss mechanisms inside a device upon illumination. Herein, we report the important origin of V_oc losses in methylammonium lead iodide perovskite (MAPI)-based solar cells, which results from undesirable positive charge (hole) accumulation at the interface between the perovskite photoactive layer and the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole-transport layer. We show strong correlation between the thickness-dependent surface photovoltage and device performance, unraveling that the interfacial charge accumulation leads to charge carrier recombination and results in a large decrease in V_oc for the PEDOT:PSS/MAPI inverted devices (180 mV reduction in 50 nm thick device compared to 230 nm thick one). In contrast, accumulated positive charges at the TiO₂/MAPI interface modify interfacial energy band bending, which leads to an increase in V_oc for the TiO₂/MAPI conventional devices (70 mV increase in 50 nm thick device compared to 230 nm thick one). Our results provide an important guideline for better control of interfaces in perovskite solar cells to improve device performance further.

Strong Volta potential change in doped zinc oxide as a photoresponse to UV irradiation

Doped ZnO thin films on ITO substrates were prepared by reactive co-sputtering of ZnO and several dopant metals, namely Al, Mn, Ti, W or Zr. To elucidate the influence of the dopant, morphological and compositional investigations were performed applying SEM/EDX, XRD and AFM. The optical band gaps of the materials were determined by UV-VIS measurements and the subsequent analysis of the derived Tauc plots. SKP (Scanning Kelvin Probe) measurements were performed under alternating illumination periods in order to measure the CPD (contact potential difference) response on UV irradiation; effective donor concentrations were calculated from the SKP results. The obtained X-ray diffractograms revealed that W : ZnO is amorphous, whereas all other dopants form crystalline structures with diffraction angles shifted towards lower values. SEM and AFM imaging revealed a significant influence of the dopant on the film morphology. The optical band gap values are in the range of the ZnO value (∼3.30 eV), with the lowest value of 3.29 eV being measured for Mn : ZnO. An exception was found for W : ZnO, which exhibits significant band gap widening reaching 4.35 eV. The effective donor concentrations are low for all samples under dark conditions, whereas they showed enhanced values under illumination. The sensitivity of all materials towards illumination makes them promising candidates for future research activities in the field of photovoltaics.

Doped ZnO thin films on ITO substrates were prepared by reactive co-sputtering of ZnO and several dopant metals, namely Al, Mn, Ti, W or Zr.

Uniaxial Expansion of the 2D Ruddlesden-Popper Perovskite Family for Improved Environmental Stability

The unique hybrid nature of 2D Ruddlesden-Popper (R-P) perovskites has bestowed upon them not only tunability of their electronic properties but also high-performance electronic devices with improved environmental stability as compared to their 3D analogs. However, there is limited information about their inherent heat, light, and air stability and how different parameters such as the inorganic layer number and length of organic spacer molecule affect stability. To gain deeper understanding on the matter we have expanded the family of 2D R-P perovskites, by utilizing pentylamine (PA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-5, PA = CH₃(CH₂)₄NH₃⁺, C5) and hexylamine (HA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-4, HA = CH₃(CH₂)₅NH₃⁺, C6) as the organic spacer molecules between the inorganic slabs, creating two new series of layered materials, for up to n = 5 and 4 layers, respectively. The resulting compounds were extensively characterized through a combination of physical and spectroscopic methods, including single crystal X-ray analysis. High resolution powder X-ray diffraction studies using synchrotron radiation shed light for the first time to the phase transitions of the higher layer 2D R-P perovskites. The increase in the length of the organic spacer molecules did not affect their optical properties; however, it has a pronounced effect on the air, heat, and light stability of the fabricated thin films. An extensive study of heat, light, and air stability with and without encapsulation revealed that specific compounds can be air stable (relative humidity (RH) = 20-80% ± 5%) for more than 450 days, while heat and light stability in air can be exponentially increased by encapsulating the corresponding films. Evaluation of the out-of-plane mechanical properties of the corresponding materials showed that their soft and flexible nature can be compared to current commercially available polymer substrates (e.g., PMMA), rendering them suitable for fabricating flexible and wearable electronic devices.

Complexities of Contact Potential Difference Measurements on Metal Halide Perovskite Surfaces

Understanding the stability of metal halide perovskite (MHP) surfaces is of considerable interest for the development of devices based on these materials. We present here a vacuum-based study of the surface potential and response to illumination of two different types of perovskite films, methylammonium lead bromide (MAPbBr₃) and the 2D Ruddlesden-Popper phase butylammonium lead iodide (BA₂PbI₄, n = 1), using Kelvin probe-based contact potential difference and surface photovoltage measurements. We show that supraband gap light irradiation can induce the loss of halide species, which adsorb on the Kelvin probe tip, inducing quasi-irreversible changes of the MHP surface and tip work functions. If undetected, this can lead to misinterpretations of the MHP surface potential. Our results illustrate the effectiveness of the Kelvin probe-based technique in providing complementary information on the energetics of perovskite surfaces and the necessity to monitor the work function of the probe to avoid erroneous conclusions when working on these materials.

MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of a CH3NH3PbI3 Perovskite Solar Cell with an Efficiency of over 20

Interface engineering of organic-inorganic halide perovskite solar cells (PSCs) plays a pivotal role in achieving high power conversion efficiency (PCE). In fact, the perovskite photoactive layer needs to work synergistically with the other functional components of the cell, such as charge transporting/active buffer layers and electrodes. In this context, graphene and related two-dimensional materials (GRMs) are promising candidates to tune "on demand" the interface properties of PSCs. In this work, we fully exploit the potential of GRMs by controlling the optoelectronic properties of molybdenum disulfide (MoS₂) and reduced graphene oxide (RGO) hybrids both as hole transport layer (HTL) and active buffer layer (ABL) in mesoscopic methylammonium lead iodide (CH₃NH₃PbI₃) perovskite (MAPbI₃)-based PSCs. We show that zero-dimensional MoS₂ quantum dots (MoS₂ QDs), derived by liquid phase exfoliated MoS₂ flakes, provide both hole-extraction and electron-blocking properties. In fact, on one hand, intrinsic n-type doping-induced intraband gap states effectively extract the holes through an electron injection mechanism. On the other hand, quantum confinement effects increase the optical band gap of MoS₂ (from 1.4 eV for the flakes to >3.2 eV for QDs), raising the minimum energy of its conduction band (from -4.3 eV for the flakes to -2.2 eV for QDs) above the one of the conduction band of MAPbI₃ (between -3.7 and -4 eV) and hindering electron collection. The van der Waals hybridization of MoS₂ QDs with functionalized reduced graphene oxide (f-RGO), obtained by chemical silanization-induced linkage between RGO and (3-mercaptopropyl)trimethoxysilane, is effective to homogenize the deposition of HTLs or ABLs onto the perovskite film, since the two-dimensional nature of RGO effectively plugs the pinholes of the MoS₂ QD films. Our "graphene interface engineering" (GIE) strategy based on van der Waals MoS₂ QD/graphene hybrids enables MAPbI₃-based PSCs to achieve a PCE up to 20.12% (average PCE of 18.8%). The possibility to combine quantum and chemical effects into GIE, coupled with the recent success of graphene and GRMs as interfacial layer, represents a promising approach for the development of next-generation PSCs.

Control of Interface Defects for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes Using Nickel Oxide Hole Injection Layer

Metal halide perovskites (MHPs) have emerged as promising materials for light-emitting diodes owing to their narrow emission spectrum and wide range of color tunability. However, the low exciton binding energy in MHPs leads to a competition between the trap-mediated nonradiative recombination and the bimolecular radiative recombination. Here, efficient and stable green emissive perovskite light-emitting diodes (PeLEDs) with an external quantum efficiency of 14.6% are demonstrated through compositional, dimensional, and interfacial modulations of MHPs. The interfacial energetics and optoelectronic properties of the perovskite layer grown on a nickel oxide (NiO x ) and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate hole injection interfaces are investigated. The better interface formed between the NiO x /perovskite layers in terms of lower density of traps/defects, as well as more balanced charge carriers in the perovskite layer leading to high recombination yield of carriers are the main reasons for significantly improved device efficiency, photostability of perovskite, and operational stability of PeLEDs.

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Processing Dependent Influence of the Hole Transport Layer Ionization Energy on Methylammonium Lead Iodide Perovskite Photovoltaics

Organometal halide perovskite photovoltaics typically contain both electron and hole transport layers, both of which influence charge extraction and recombination. The ionization energy (IE) of the hole transport layer (HTL) is one important material property that will influence the open-circuit voltage, fill factor, and short-circuit current. Herein, we introduce a new series of triarylaminoethynylsilanes with adjustable IEs as efficient HTL materials for methylammonium lead iodide (MAPbI₃) perovskite based photovoltaics. The three triarylaminoethynylsilanes investigated can all be used as HTLs to yield PV performance on par with the commonly used HTLs PEDOT:PSS and Spiro-OMeTAD in inverted architectures (i.e., HTL deposited prior to the perovskite layer). We further investigate the influence of the HTL IE on the photovoltaic performance of MAPbI₃ based inverted devices using two different MAPbI₃ processing methods with a series of 11 different HTL materials, with IEs ranging from 4.74 to 5.84 eV. The requirements for the HTL IE change based on whether MAPbI₃ is formed from lead acetate, Pb(OAc)₂, or PbI₂ as the Pb source. The ideal HTL IE range is between 4.8 and 5.3 eV for MAPbI₃ processed from Pb(OAc)₂, while with PbI₂ the PV performance is relatively insensitive to variations in the HTL IE between 4.8 and 5.8 eV. Our results suggest that contradictory findings in the literature on the effect of the HTL IE in perovskite photovoltaics stem partly from the different processing methods employed.

Phase Engineering of Perovskite Materials for High-Efficiency Solar Cells: Rapid Conversion of CH3NH3PbI3 to Phase-Pure CH3NH3PbCl3 via Hydrochloric Acid Vapor Annealing Post-Treatment

Organometal halide CH₃NH₃PbI₃ (MAPbI₃) has been commonly used as the light absorber layer of perovskite solar cells (PSCs), and, especially, another halide element chlorine (Cl) has been often incorporated to assist the crystallization of perovskite film. However, in most cases, a predominant MAPbI₃ phase with trace of Cl^- is obtained ultimately and the role of Cl involvement remains unclear. Herein, we develop a low-cost and facile method, named hydrochloric acid vapor annealing (HAVA) post-treatment, and realize a rapid conversion of MAPbI₃ to phase-pure MAPbCl₃, demonstrating a new concept of phase engineering of perovskite materials toward efficiency enhancement of PSCs for the first time. The average grain size of perovskite film after HAVA post-treatment increases remarkably through an Ostwald ripening process, leading to a denser and smoother perovskite film with reduced trap states and enhanced crystallinity. More importantly, the generation of MAPbCl₃ secondary phase via phase engineering is beneficial for improving the carrier mobility with a more balanced carrier transport rate and enlarging the band gap of perovskite film along with optimized energy level alignment. As a result, under the optimized HAVA post-treatment time (2 min), we achieved a significant enhancement of the power conversion efficiency (PCE) of the MAPbI₃-based planar heterojunction-PSC device from 14.02 to 17.40% (the highest PCE reaches 18.45%) with greatly suppressed hysteresis of the current-voltage response.

Surface and Interface Aspects of Organometal Halide Perovskite Materials and Solar Cells

The current challenges (e.g., stability, hysteresis, etc.) in organometal halide perovskite solar cell research are closely correlated with surfaces and interfaces. For instance, efficient generation of charges, extraction, and transport with minimum recombination through interlayer interfaces is crucial to attain high-efficiency solar cell devices. Furthermore, intralayer interfaces may be present in the form of grain boundaries within a film composed of the same material, for example, a polycrystalline perovskite layer. The adjacent grains may assume different crystal orientations and/or have different chemical compositions, which impacts charge excitation and dynamics and thereby the overall solar cell performance. In this Perspective, we present case studies to demonstrate (1) how surfaces and interfaces can impact material properties and device performance and (2) how these issues can be investigated by surface science techniques, such as scanning probe microscopy, photoelectron spectroscopy, and so forth. We end this Perspective by outlining the future research directions based on the reported results as well as the new trends in the field.