Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which have been diligently sought after for a long time. Construction of two-dimensional (2D) vdW multiferroics is a more exciting endeavor. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising the atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) α-In2Se3. We demonstrate anomalously nonreciprocal and nonvolatile electric-field control of magnetization by ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of α-In2Se3. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of a few atomic layers for multistage magnetic memories and brain-inspired in-memory computing.

Ultrasensitive Graphene Field-Effect Biosensors Based on Ferroelectric Polarization of Lithium Niobate for Breast Cancer Marker Detection

Herein, we present a novel ultrasensitive graphene field-effect transistor (GFET) biosensor based on lithium niobate (LiNbO3) ferroelectric substrate for the application of breast cancer marker detection. The electrical properties of graphene are varied under the electrostatic field, which is generated through the spontaneous polarization of the ferroelectric substrate. It is demonstrated that the properties of interface between graphene and solution are also altered due to the interaction between the electrostatic field and ions. Compared with the graphene field-effect biosensor based on the conventional Si/SiO2 gate structure, our biosensor achieves a higher sensitivity to 64.7 mV/decade and shows a limit of detection down to 1.7 fM (equivalent to 12 fg·mL-1) on the detection of microRNA21 (a breast cancer marker). This innovative design combining GFETs with ferroelectric substrates holds great promise for developing an ultrahigh-sensitivity biosensing platform based on graphene that enables rapid and early disease diagnosis.

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe's electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe's band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration

Ferroelectric field-effect transistors (FeFETs) are increasingly important for in-memory computing and monolithic 3D (M3D) integration in system-on-chip (SoC) applications. However, the high-temperature processing required by most ferroelectric memories can lead to thermal damage to the underlying device layers, which poses significant physical limitations for 3D integration processes. To solve this problem, the study proposes using a nanosecond pulsed laser for selective annealing of hafnia-based FeFETs, enabling precise control of heat penetration depth within thin films. Sufficient thermal energy is delivered to the IGZO oxide channel and HZO ferroelectric gate oxide without causing thermal damage to the bottom layer, which has a low transition temperature (<250 °C). Using optimized laser conditions, a fast response time (<1 µs) and excellent stability (cycle > 106, retention > 106 s) are achieved in the ferroelectric HZO film. The resulting FeFET exhibited a wide memory window (>1.7 V) with a high on/off ratio (>105). In addition, moderate ferroelectric properties (2·Pr of 14.7 µC cm-2) and pattern recognition rate-based linearity (potentiation: 1.13, depression: 1.6) are obtained. These results demonstrate compatibility in HZO FeFETs by specific laser annealing control and thin-film layer design for various structures (3D integrated, flexible) with neuromorphic applications.

Room-Temperature Ferroelectric Epitaxial Nanowire Arrays with Photoluminescence

The development of large-scale, high-quality ferroelectric semiconductor nanowire arrays with interesting light-emitting properties can address limitations in traditional wide-bandgap ferroelectrics, thus serving as building blocks for innovative device architectures and next-generation high-density optoelectronics. Here, we investigate the optical properties of ferroelectric CsGeX3 (X = Br, I) halide perovskite nanowires that are epitaxially grown on muscovite mica substrates by vapor phase deposition. Detailed structural characterizations reveal an incommensurate heteroepitaxial relationship with the mica substrate. Furthermore, photoluminescence that can be tuned from yellow-green to red emissions by varying the halide composition demonstrates that these nanowire networks can serve as platforms for future optoelectronic applications. In addition, the room-temperature ferroelectricity and ferroelectric domain structures of these nanowires are characterized using second harmonic generation (SHG) polarimetry. The combination of room-temperature ferroelectricity with photoluminescence in these nanowire arrays unlocks new avenues for the design of novel multifunctional materials.

Investigation of electronic, ferroelectric and local electrical conduction behavior of RF sputtered BiFeO3thin films

Most of the applied research on BiFeO3(BFO) focuses on magnetoelectric and spintronic applications. This calls for a detailed grasp of multiferroic and conduction properties. BFO thin films with (100) epitaxial growth has been deposited on a LaNiO3(LNO) buffered Pt/Ti/SiO2/Si(100) substrate using RF magnetron sputtering. The film formed at 15 mTorr, 570 °C, and with Ar/O24:1 had a reasonably high degree of (100)-preferential orientation, the least surface roughness, and a densely packed structure. We obtained ferroelectric loops with strong polarization (150μC cm-2). The leakage current density is as low as 10-2A cm-2at 100 kV cm-1, implying that space-charge-limited bulk conduction (SCLC) was the primary conduction channel for carriers within BFO films. Local electrical conduction behavior demonstrates that at lower voltages, the grain boundary dominates electrical conduction and is linked to the displacement of oxygen vacancies in the grain boundary under external electric fields. We hope that a deeper understanding of the conduction mechanism will help integrate BFO into viable technologies.

High Thermoelectric Performance Related to PVDF Ferroelectric Domains in P-Type Flexible PVDF-Bi0.5Sb1.5Te3 Composite Film

There is increasing demand to power Internet of Things devices using ambient energy sources. Flexible, low-temperature, organic/inorganic thermoelectric devices are a breakthrough next-generation approach to meet this challenge. However, these systems suffer from poor performance and expensive processing preventing wide application of the technology. In this study, by combining a ferroelectric polymer (Polyvinylidene fluoride (PVDF, β phase)) with p-type Bi0.5Sb1.5Te3 (BST) a thermoelectric composite film with maximum is produced power factor. Energy filter from ferroelectric-thermoelectric junction also leads to high Seebeck voltage ≈242 µV K-1. For the first time, compelling evidence is provided that the dipole of a ferroelectric material is helping decouple electron transport related to carrier mobility and the Seebeck coefficient, to provide 5× or more improvement in thermoelectric power factor. The best composition, PVDF/BST film with BST 95 wt.% has a power factor of 712 µW•m-1 K-2. A thermoelectric generator fabricated from a PVDF/BST film demonstrated Pmax T 12.02 µW and Pdensity 40.8 W m-2 under 50 K temperature difference. This development also provides a new insight into a physical technique, applicable to both flexible and non-flexible thermoelectrics, to obtain comprehensive thermoelectric performance.

An inorganic liquid crystalline dispersion with 2D ferroelectric moieties

Electro-optical effect-based liquid crystal devices have been extensively used in optical modulation techniques, in which the Kerr coefficient reflects the sensitivity of the liquid crystals and determines the strength of the device's operational electric field. The Peterlin-Stuart theory and the O'Konski model jointly indicate that a giant Kerr coefficient could be obtained in a material with both a large geometrical anisotropy and an intrinsic polarization, but such a material is not yet reported. Here we reveal a ferroelectric effect in a monolayer two-dimensional mineral vermiculite. A large geometrical anisotropy factor and a large inherent electric dipole together raise the record value of Kerr coefficient by an order of magnitude, till 3.0 × 10-4 m V-2. This finding enables an ultra-low operational electric field of 102-104 V m-1 and the fabrication of electro-optical devices with an inch-level electrode separation, which has not previously been practical. Because of its high ultraviolet stability (decay <1% under ultraviolet exposure for 1000 hours), large-scale production, and energy efficiency, prototypical displayable billboards have been fabricated for outdoor interactive scenes. This work provides new insights for both liquid crystal optics and two-dimensional ferroelectrics.

High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide

Preventing ferroelectric materials from losing their ferroelectricity over a low thickness of several nanometers is crucial in developing multifunctional nanoelectronics. Epitaxially grown 5 at. % yttrium-doped Hf0.5Zr0.5O2 (YHZO) thin films exhibit an atomically smooth surface, an ability to maintain ferroelectricity even at a thickness of 10 nm, and excellent insulating properties, making them suitable for use as gate oxides in ferroelectric thin film transistors (FeTFTs). Through the epitaxial growth of a YHZO/La0.67Sr0.33MnO3 (LSMO)/SrTiO3 (STO) heterostructure, YHZO effectively retains its ferroelectricity and orthorhombic single phase, leading to enhancing electron mobility (∼19.74 cm2 V-1 s-1) and memory window (3.7 V) in the amorphous InGaZnO4 (a-IGZO)/YHZO/LSMO/STO FeTFTs. These FeTFTs demonstrate a consistent memory function with remarkable endurance (∼106 cycles) and retention (∼104 s). Furthermore, they sustain a constant memory window even under ±6 V bias stress for 104 s and exhibit excellent stability even under ±6 V/1 ms pulse cycling for 107 cycles. For comparison, a transistor with the same structure was fabricated using epitaxial nonferroelectric LaAlO3 (LAO) and epitaxial undoped Hf0.5Zr0.5O2 (HZO) as alternatives to YHZO. This study presents a novel approach to exploit the potential of YHZO in FeTFTs, contributing to the development of next-generation logic-in-memory.

Magnetic Phase Transition-Induced Modulation of Ferroelectric Properties in Hexagonal RFeO3 (R = Tb and Ho)

Hexagonal rare-earth iron oxides (h-RFeO3) exhibit spontaneous magnetization and room-temperature ferroelectricity simultaneously. However, achieving a large magnetoelectric coupling necessitates further exploration. Herein, we report the impact of the magnetic phase transition on the ferroelectric properties of epitaxial h-RFeO3 (R = Tb and Ho) films prepared by pulsed laser deposition. The metastable h-RFeO3 phase is successfully stabilized with high crystallinity and low leakage current due to the ITO buffer layer, making it possible to investigate the ferroelectric properties. The h-TbFeO3 film exhibits a magnetic-field-induced transition from antiferromagnetic (AFM) to weak ferromagnetic (wFM) phases below 30 K, while also exhibiting ferroelectricity at 300 K. The dielectric constants change with the magnetic phase transition, demonstrating hysteresis in the magnetocapacitance. In contrast, the h-HoFeO3 film exhibits antiferroelectric-like behavior and an AFM-wFM phase transition. Notably, the h-HoFeO3 film shows a rapid increase in the remnant polarization during the AFM-wFM phase transition accompanied by an increase in the ferroelectric component. Considering the strong connection between the antiferroelectric behavior in the h-RFeO3 system and the ferroelectric domain wall motion, this considerable modification of ferroelectric properties during the magnetic phase transition is probably due to the faster movement of the ferroelectric domain walls in the wFM phase induced by the clamping effect. Our findings indicate the effectiveness of magnetic phase transitions in enhancing the magnetoelectric coupling, particularly when utilizing domain wall clamping properties.

Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors

Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs). These devices demonstrate quasi-static transfer characteristics that include a hysteresis window alongside transient phenomena that bear resemblance to synaptic plasticity-encapsulating excitatory postsynaptic current (EPSC) as well as both short-term and long-term potentiation (STP/LTP). We also explore and elucidate other aspects such as the subthreshold swing and the hysteresis window under dynamic state by varying the pace of voltage sweeps. In addition, we developed an analytical model that describes the electrical properties of OFe-FETs, which melds an empirical formula for ferroelectric polarization with a compact model. This model agrees well with the experimental data concerning quasi-static transfer characteristics, potentially serving as a quantitative tool to improve the understanding and design of OFe-FETs.

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

In recent times, there has been a notable surge of interests in hafnia (HfO2)-based ferroelectrics, primarily due to their remarkable ferroelectric properties employed in ultra-thin configurations, alongside their compatibility with the conventional CMOS manufacturing process. In order to harness the full potential of HfO2-based films for high-performance non-volatile memory applications, it is imperative to enhance their ferroelectric characteristics and durability. This study introduces a straightforward approach aimed at augmenting the ferroelectric performance of HfxZr1-xO2(HZO) films deposited on silicon (Si) substrates through the engineering of oxygen vacancies (VO). The results of this endeavor demonstrate a significant enhancement in ferroelectric performance, characterized by a 2Pr value of 47μC cm-2and impressive endurance, enduring up to 108cycles under an 8 MV cm-1electric field without the need of a wake-up process. This marked improvement can be attributed to a dual-pronged approach, involving the incorporation of an Al2O3interlayer and the introduction of Al atoms into the HZO film. The Al2O3interlayer primarily serves to mitigate the presence of oxygen vacancies at the interface, while the introduction of Al dopants elevates the concentration of oxygen vacancies within the bulk material. This modulation of oxygen vacancy concentration proves instrumental in facilitating the formation of a ferroelectric o-III phase within the HZO-based films, thereby further augmenting their ferroelectric performance. This innovative and effective strategy offers an alternative avenue for enhancing the ferroelectric properties of materials characterized by a fluorite crystal structure.

Flexible piezoelectric sensor based on polyvinylidene fluoride/polyacrylonitrile/carboxy-terminated multi-walled carbon nanotube composite films for human motion monitoring

Flexible piezoelectric devices have attracted much attention in the fields of intelligent devices and biomedicine because of their high sensitivity, stability, and flexibility. In this paper, a multifunctional flexible pressure sensor was prepared by adding polyacrylonitrile (PAN) and carboxylic-terminated multi-walled carbon nanotubes (c-MWCNTs) with polyvinylidene difluoride (PVDF) as the substrate. Theβ-phase content of PVDF/PAN blended fibers compounded with c-MWCNT was up to 95%. At the same time, when PAN was added, the mechanical properties of the composite fibers were constantly improved. The results show that the polymer blending method can improve the comprehensive properties of PVDF composite. The flexible sensor prepared from the PVDF/PAN/c-MWCNT composite film has an output voltage of 2.1 V and a current of 7μA. The addition of c-MWCNT can largely improve the sensitivity of the sensor (4.19 V N-1). The sensor is attached to the finger and shows good output performance under different degrees of bending of the finger. The maximum output voltage of the sensor is 0.4 V, 0.56 V and 1.15 V when the finger bending angle is 30°, 60°, and 90°, respectively. Moreover, the developed piezoelectric sensor can monitor large-scale movements of various parts of the human body. Therefore, this composite material shows potential in areas such as motion monitoring and energy storage devices.

Electric properties of the twelve-fold vortex structure in hexagonal manganites

Hexagonal manganites, as a functional ferroelectric (FE) material, receive considerable attention due to their improper ferroelectricity and topological vortex structures. This family exhibits three low-symmetry states accompanied by distinct vortex domain structures. In addition to the FEP63cmand anti-FE (AFE)P-3c1 states accompanied by dual six-fold vortex structures, there is another FEP3c1 state accompanied by a twelve-fold vortex structure. The responses of FE materials to external stimuli, such as external electric fields, are the core ingredients in the physics of FEs and are significant for technological applications. Under external electric fields, the responses of FE materials are determined by special FE domain structures. The electric properties of the FEP63cmand AFEP-3c1 states are very different. However, the electric properties of the FEP3c1 state, which only stabilizes in Ga-substituted In(Mn, Ga)O3, are unclear. The present work studies the electric properties of the FEP3c1 state. The electric-field-driven transition of the FEP3c1 state is found to follow two sequences, i.e. (1) twelve-foldP3c1 → nine-foldP3c1 +P63cm→ three-foldP63cm, and (2) twelve-foldP3c1 → six-foldP3c1 → three-foldP63cm. The variation of average polarization withEfor the FEP3c1 state with the second transition sequence manifests as an unusual triple-hysteresis loop, different from the usual single-hysteresis loop of FE materials. The results are related to the coexistence of the FE and non-FE domain walls in the FEP3c1 state. Furthermore, it is found that the FEP3c1 state at substitution concentration 0.39 exhibits the highest dielectric response. The results advance our understanding of topological vortex structures in hexagonal manganites.

Ferroelectric Size Effects on Statics and Dynamics of Domain Wall

Domain walls separating differently oriented polarization regions of ferroelectric materials are known to greatly impact nanoscale materials and device functionalities. Though the understanding of size effects in ferroelectric nanostructures has progressed, the effect of thickness downsizing on domain wall scaling behavior has remained unexplored. Using piezoresponse force microscopy, epitaxial BaTiO3 film thickness size (2-90 nm) effects on the critical scaling universality of the domain wall dynamical creep and static roughness exponents including dimensionality is demonstrated. Independently estimated static roughness exponents ranging between 0.34 and 0.28 and dynamical creep exponents transition from 0.54 to 0.22 elucidate the domain wall dimensionality transition from two- to quasi-one-dimension in the thickness range of 10-25 nm, which is later validated by evaluating effective dimensionality within the paradigm of random-bond universality. The observed interdimensional transition is further credenced to the compressive strain and long-range strain-dipolar interactions, as revealed by the structural analyses and additional measurements with modified substrate-induced strain. These results provide new insights into the understanding of size effects in nanoscale ferroelectricity, paving the way toward future nanodevices.

An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors

A physics-based model on polarization switching in ferroelectric polycrystalline films is proposed. The calculation results by the model agree well with experimental results regarding dynamic operations of ferroelectric-gate field-effect transistors (FeFETs). In the model, an angle θ for each grain in the ferroelectric polycrystal is defined, where θ is the angle between the spontaneous polarization and the film normal direction. Under a constant electric field for a single-crystal film with θ = 0, phenomena regarding polarization domain nucleation and wall propagation are well described by the Kolmogorov-Avrami-Ishibashi theory. Since the electric fields are time-dependent in FeFET operations and the θ values are distributed in the polycrystalline film, the model in this paper forms an extended Kolmogorov-Avrami-Ishibashi (EKAI) model. Under a low electric field, the nucleation and domain propagation proceed according to thermally activated processes, meaning that switching the time scale of a grain with the angle θ is proportional to an exponential form as exp(const./Ezcosθ) [Ez: the film-normal electric field]. Wide θ distribution makes the time response quite broad even on the logarithmic scale, which relates well with the broad switching time experimentally shown by FeFETs. The EKAI model is physics based and need not assume non-physical distribution functions in it.

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System

Hardware neuromorphic systems are crucial for the energy-efficient processing of massive amounts of data. Among various candidates, hafnium oxide ferroelectric tunnel junctions (FTJs) are highly promising for artificial synaptic devices. However, FTJs exhibit non-ideal characteristics that introduce variations in synaptic weights, presenting a considerable challenge in achieving high-performance neuromorphic systems. The primary objective of this study is to analyze the origin and impact of these variations in neuromorphic systems. The analysis reveals that the major bottleneck in achieving a high-performance neuromorphic system is the dynamic variation, primarily caused by the intrinsic 1/f noise of the device. As the device area is reduced and the read bias (VRead ) is lowered, the intrinsic noise of the FTJs increases, presenting an inherent limitation for implementing area- and power-efficient neuromorphic systems. To overcome this limitation, an adaptive read-biasing (ARB) scheme is proposed that applies a different VRead to each layer of the neuromorphic system. By exploiting the different noise sensitivities of each layer, the ARB method demonstrates significant power savings of 61.3% and a scaling effect of 91.9% compared with conventional biasing methods. These findings contribute significantly to the development of more accurate, efficient, and scalable neuromorphic systems.

The Influence of the Molecular Structure of Compounds on Their Properties and the Occurrence of Chiral Smectic Phases

We have designed new chiral smectic mesogens with the -CH2O group near the chiral center. We synthesized two unique rod-like compounds. We determined the mesomorphic properties of these mesogens and confirmed the phase identification using dielectric spectroscopy. Depending on the length of the oligomethylene spacer (i.e., the number of methylene groups) in the achiral part of the molecules, the studied materials show different phase sequences. Moreover, the temperature ranges of the observed smectic phases are different. It can be seen that as the length of the alkyl chain increases, the liquid crystalline material shows more mesophases. Additionally, its clearing (isotropization) temperature increases. The studied compounds are compared with the structurally similar smectogens previously synthesized. The helical pitch measurements were performed using the selective reflection method. These materials can be useful and effective as chiral components and dopants in smectic mixtures targeted for optoelectronics and photonics.

Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array

In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al0.7Sc0.3N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm2 and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of <2%. Additionally, the devices demonstrate stable multistate memory characteristics with a dedicated operation scheme. The back-end-of-line (BEOL)-compatible fabrication process, along with all these device performances, shows the potential of AlScN-based capacitors for the implementation of the high-density selector-free memory array.

Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors

Ferroelectric memristors hold immense promise for advanced memory and neuromorphic computing. However, they face limitations due to low readout current density in conventional designs with low-conductive ferroelectric channels, especially at the nanoscale. Here, we report a ferroelectric-mediated memristor utilizing a 2D MoS2 nanoribbon channel with an ultrascaled cross-sectional area of <1000 nm2, defined by a ferroelectric BaTiO3 nanoribbon stacked on top. Strikingly, the Schottky barrier at the MoS2 contact can be effectively tuned by the charge transfers coupled with quasi-zero-dimensional polarization charges formed at the two ends of the nanoribbon, which results in distinctive resistance switching accompanied by multiple negative differential resistance showing the high-current density of >104 A/cm2. The associated space charges in BaTiO3 are minimized to ∼3.7% of the polarization charges, preserving nonvolatile polarization. This achievement establishes ferroelectric-mediated nanoscale semiconductor memristors with high readout current density as promising candidates for memory and highly energy-efficient in-memory computing applications.

HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO2-ZrO2 ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent ferroelectric properties over a wide doping range and low deposition temperature. In this work, different HfO2-ZrO2 superlattice (SL) FE films with varying periodicity of HfO2 (5 cycles)-ZrO2 (5 cycles) (SL5), HfO2 (10 cycles)-ZrO2 (10 cycles) (SL10), and HfO2 (15 cycles)-ZrO2 (15 cycles) (SL15) were studied systematically. The HfZrOx (HZO) alloy was used as a comparison device. The SL5 film demonstrated improved ferroelectric properties compared to the HZO film, with the 2 times remnant polarization (2Pr) values increasing from 41.4 to 48.6 μC/cm2 at an applied voltage of 3 V/10 kHz. Furthermore, the first-order reversal curve diagrams of different SL and HZO capacitors at different states (initial, wake-up, fatigue, and recovery) were measured. The SL capacitors were found to effectively suppress the diffusion of defects during P-V cycling, resulting in improved fatigue stability characteristics and fatigue recovery capability compared to the HZO capacitor. Moreover, an improved switching speed of the SL films compared to the HZO capacitor was concluded based on the inhomogeneous field mechanism (IFM) model. These results indicate that the SL structure has a high potential in future high-speed ferroelectric memory applications with excellent stability and recovery capability.

Leakage Mechanism and Cycling Behavior of Ferroelectric Al0.7Sc0.3N

Ferroelectric scandium-doped aluminum nitride (Al1-xScxN) is of considerable research interest because of its superior ferroelectricity. Studies indicate that Al1-xScxN may suffer from a high leakage current, which can hinder further thickness scaling and long-term reliability. In this work, we systematically investigate the origin of the leakage current in Al0.7Sc0.3N films via experiments and theoretical calculations. The results reveal that the leakage may originate from the nitrogen vacancies with positively charged states and fits well with the trap-assisted Poole-Frenkel (P-F) emission. Moreover, we examine the cycling behavior of ferroelectric Al0.7Sc0.3N-based FeRAM devices. We observe that the leakage current substantially increases when the device undergoes bipolar cycling with a pulse amplitude larger than the coercive electric field. Our analysis shows that the increased leakage current in bipolar cycling is caused by the monotonously reduced trap energy level by monitoring the direct current (DC) leakage under different temperatures and the P-F emission fitting.

Photo-Assisted Ferroelectric Domain Control for α-In2 Se3 Artificial Synapses Inspired by Spontaneous Internal Electric Fields

α-In2 Se3 semiconductor crystals realize artificial synapses by tuning in-plane and out-of-plane ferroelectricity with diverse avenues of electrical and optical pulses. While the electrically induced ferroelectricity of α-In2 Se3 shows synaptic memory operation, the optically assisted synaptic plasticity in α-In2 Se3 has also been preferred for polarization flipping enhancement. Here, the synaptic memory behavior of α-In2 Se3 is demonstrated by applying electrical gate voltages under white light. As a result, the induced internal electric field is identified at a polarization flipped conductance channel in α-In2 Se3 /hexagonal boron nitride (hBN) heterostructure ferroelectric field effect transistors (FeFETs) under white light and discuss the contribution of this built-in electric field on synapse characterization. The biased dipoles in α-In2 Se3 toward potentiation polarization direction by an enhanced internal built-in electric field under illumination of white light lead to improvement of linearity for long-term depression curves with proper electric spikes. Consequently, upon applying appropriate electric spikes to α-In2 Se3 /hBN FeFETs with illuminating white light, the recognition accuracy values significantly through the artificial learning simulation is elevated for discriminating hand-written digit number images.

Probing of structural, electrical, and dielectric properties of samarium doped composite of barium titanate (Ba0.5Sm0.5TiO3) and cobalt ferrite (Co0.5Sm0.5Fe2O4)

Multiferroic composites exhibit remarkable magnetoelectric (ME) characteristics, offering diverse applications. The study investigated samarium (Sm) doped composites, specifically (1 -x)Ba0.5Sm0.5TiO3-xCo0.5Sm0.5Fe2O4(x= 0.0,0.02,0.04,0.06), formed by combining Sm doped BaTiO3and CoFe2O4using the solid-state reaction method. X-ray diffraction analysis revealed a tetragonal structure in Ba0.5Sm0.5TiO3(SmBT) and a cubic spinel secondary phase in Co0.5Sm0.5Fe2O4(SmCF), suggesting uniform distribution of grains. The optical bandgap in SmBT and the composite showed a slight decrease (from 3.14 eV to 3.01 eV) with increasing Sm concentration, as observed in optical studies. The dielectric measurements showed that the dielectric constant of SmBT was higher (ϵ'= 526.3) between 80 Hz and 8 MHz, while the composites had a lower dielectric constant (ϵ'= 438.4) at lower frequencies and the real part of dielectric was fitted by Havriliak-Negami (H-N) model shows that the dielectric curves exhibit a characteristic dispersion pattern known as the cole-cole mode (grains) also confirmed by cole-cole plot. The response exhibited linearity, adhering to the universal dielectric response model. Ferroelectric behaviour in the underlying material confirms SmBT non-centrosymmetric character and the storage efficiency (η) of all composites surpassed 90%, reaching a peak of 94.8% with a ferrite content of 0.02. The versatility of the Sm-doped composites offers opportunities for diverse applications in fields such as electronics, telecommunications, and biomedical devices. Notably, these materials can be utilized in Memory Devices, Actuators, and other relevant applications.

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O3 (PZT) and a composite PZT/Al2O3 bilayer are studied. Two different mechanisms, charge trapping and generation of traps, both contribute to the degradation. We have observed positive threshold voltage shift in both kinds of devices under positive gate bias stress. In the devices with a PZT gate oxide, we have found the degradation is owing to electron trapping in pre-existing oxide traps. However, the degradation is caused by electron trapping in pre-existing oxide traps and the generation of traps for the devices with a composite PZT/Al2O3 gate oxide. Owing to the large difference in dielectric constants between PZT and Al2O3, the strong electric field in the Al2O3 interlayer makes PZT/Al2O3 GaN HEMT easier to degrade. In addition, the ferroelectricity in PZT enhances the electric field in Al2O3 interlayer and leads to more severe degradation. According to this study, it is worth noting that the reliability problem of the ferroelectric gate GaN HEMT may be more severe than the conventional metal-insulator-semiconductor HEMT (MIS-HEMT).

Piezoelectricity, Pyroelectricity, and Ferroelectricity in Biomaterials and Biomedical Applications

Piezoelectric, pyroelectric, and ferroelectric materials are considered unique biomedical materials due to their dielectric crystals and asymmetric centers that allow them to directly convert various primary forms of energy in the environment, such as sunlight, mechanical energy, and thermal energy, into secondary energy, such as electricity and chemical energy. These materials possess exceptional energy conversion ability and excellent catalytic properties, which have led to their widespread usage within biomedical fields. Numerous biomedical applications have demonstrated great potential with these materials, including disease treatment, biosensors, and tissue engineering. For example, piezoelectric materials are used to stimulate cell growth in bone regeneration, while pyroelectric materials are applied in skin cancer detection and imaging. Ferroelectric materials have even found use in neural implants that record and stimulate electrical activity in the brain. This paper reviews the relationship between ferroelectric, piezoelectric, and pyroelectric effects and the fundamental principles of different catalytic reactions. It also highlights the preparation methods of these three materials and the significant progress made in their biomedical applications. The review concludes by presenting key challenges and future prospects for efficient catalysts based on piezoelectric, pyroelectric, and ferroelectric nanomaterials for biomedical applications.

Ferroelectricity-Driven Self-Powered Weak Temperature and Broadband Light Detection in MoS2/CuInP2S6/WSe2 van der Waals Heterojunction Nanoarchitectonics

Two-dimensional ferroelectric materials enrich the modulation degrees of freedom in self-powered van der Waals temperature/light detectors by incorporating pyroelectric and bulk photovoltaic effects. However, in addition to the low polarization, the practical applications of these materials are limited due to the significant challenge posed by their ultrathin nature, which affects their polarization stability. In this report, we introduce a design for a dual heterostructure-stabilized van der Waals heterojunction that addresses this challenge by improving the performance and extending the operational lifetime of self-powered van der Waals temperature/light detectors. The design is demonstrated using the MoS2/CuInP2S6 (CIPS)/WSe2 van der Waals heterojunction, which exhibits sensitivity to small temperature changes induced by weak light across the ultraviolet to mid-infrared spectrum. It can generate a noticeable pyroelectric current without the need for an external voltage, and its pyroelectric coefficient exceeds 130 and 978 μC/m2 K for 45 and 70 nm CIPS, respectively. The heterojunction offers high detection accuracy, with a temperature variation sensitivity as small as 0.1 K and an optical power intensity detection range from low to 1 μW/cm2. Additionally, the heterojunction exhibits exceptional detectivity (D*) for different light wavelengths. Remarkably, the self-powered detection performance remains stable for months without obvious degradation in the natural environment. These results offer a promising solution for high-performance, self-sustaining temperature/light detection applications and pave the way for the development of future ferroelectricity-driven photodetection technologies.

A Novel Spinel Ferrite-Hexagonal Ferrite Composite for Enhanced Magneto-Electric Coupling in a Bilayer with PZT

The magnetoelectric effect (ME) is an important strain mediated-phenomenon in a ferromagnetic-piezoelectric composite for a variety of sensors and signal processing devices. A bias magnetic field, in general, is essential to realize a strong ME coupling in most composites. Magnetic phases with (i) high magnetostriction for strong piezomagnetic coupling and (ii) large anisotropy field that acts as a built-in bias field are preferred so that miniature, ME composite-based devices can operate without the need for an external magnetic field. We are able to realize such a magnetic phase with a composite of (i) barium hexaferrite (BaM) with high magnetocrystalline anisotropy field and (ii) nickel ferrite (NFO) with high magnetostriction. The BNx composites, with (100 - x) wt.% of BaM and x wt.% NFO, for x = 0-100, were prepared. X-ray diffraction analysis shows that the composites did not contain any impurity phases. Scanning electron microscopy images revealed that, with an increase in NFO content, hexagonal BaM grains become prominent, leading to a large anisotropy field. The room temperature saturation magnetization showed a general increase with increasing BaM content in the composites. NFO rich composites with x ≥ 60 were found to have a large magnetostriction value of around -23 ppm, comparable to pure NFO. The anisotropy field HA of the composites, determined from magnetization and ferromagnetic resonance (FMR) measurements, increased with increasing NFO content and reached a maximum of 7.77 kOe for x = 75. The BNx composite was cut into rectangular platelets and bonded with PZT to form the bilayers. ME voltage coefficient (MEVC) measurements at low frequencies and at mechanical resonance showed strong coupling at zero bias for samples with x ≥ 33. This large in-plane HA acted as a built-in field for strong ME effects under zero external bias in the bilayers. The highest zero-bias MEVC of ~22 mV/cm Oe was obtained for BN75-PZT bilayers wherein BN75 also has the highest HA. The Bilayer of BN95-PZT showed a maximum MEVC ~992 mV/cm Oe at electromechanical resonance at 59 kHz. The use of hexaferrite-spinel ferrite composite to achieve strong zero-bias ME coupling in bilayers with PZT is significant for applications related to energy harvesting, sensors, and high frequency devices.

van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS

Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS(100) and hBN{11̅0} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.

Room-Temperature Quantum Diodes with Dynamic Memory for Neural Logic Operations

The pursuit of high-performance, next-generation nanoelectronics is fundamentally reliant on exploiting quantum phenomena such as tunneling at room temperature. However, quantum tunneling and memory dynamics are governed by two conflicting parameters: the presence or absence of defects. Therefore, the integration of both attributes within a single device presents substantial challenges. Nevertheless, successful integration has the potential to prompt crucial breakthroughs by emulating biobrain-like dynamics, in turn enabling sophisticated in-material neural logic operations. In this work, we demonstrate that a conformal nanolaminate HfO2/ZrO2 structure on silicon enables high-performing (>106 s) Fowler-Nordheim tunneling at room temperature. In addition, the device exhibits unipolar dynamic hysteresis loop opening (on/off ratio >102) with high endurance (>104 cycles) along with negative differential resistance, which is attributed to the collective ferroelectric and capacitive effects and is utilized to emulate synaptic functions. Further, proof-of-concept logic gates based on voltage-dependent plasticity and time-domain were developed using a single device, offering in-material neural-like data processing. These findings pave the way for the realization of high-performing and scalability tunneling devices in advanced nanoelectronics, which mark a promising route toward the development of next-generation, fundamental neural logic computing systems.

Phonon thermal transport in ferroelectricα-In2Se3 via first-principles calculations

Two-dimensional (2D) ferroelectrics are promising candidates in the field of microelectronics due to their unique properties such as excellent photoelectric responsiveness. However, the thermal properties of 2D ferroelectrics are less investigated. Here, the thickness dependent thermal conductivity in ferroelectricα-In2Se3is systematically investigated by the first-principles method combined with the phonon Boltzmann transport equation. On this basis, the strain and oxidation effects on the thermal conductivity of monolayerα-In2Se3is further studied. The calculation results show that the thermal conductivity has a significant reduction with decreasing film thickness or increasing tensile strain, and the anharmonic phonon-phonon scattering rate is the intrinsic mechanism for the reduction in thermal conductivity. On the other hand, the replacement of Se atoms by O atoms can achieve a bidirectional and wide-range (12×) tuning of thermal conductivity. The increase in specific heat and phonon group velocity is responsible for the thermal conductivity enhancement at high doping levels while that in phonon-phonon scattering rate is responsible for the thermal conductivity reduction at low doping levels. In all cases, acoustic phonons dominate the in-plane thermal transport behavior. These findings broaden our understanding of phonon transport and its control in ferroelectric semiconductorα-In2Se3.

Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial Synapses

Analog synaptic devices have made significant advances based on various electronic materials that can realize the biological synapse properties of neuromorphic computing. Ferroelectric (FE) HfO2-based materials with nonvolatile and low power consumption characteristics are being studied as promising materials for application to analog synaptic devices. The gradual reversal of FE multilevel polarization results in precise changes in the channel conductance and allows analogue synaptic weight updates. However, there have been few studies of FE synaptic devices doped with La, Y, and Gd. Furthermore, an investigation of interface quality is also crucial to enhance the remnant polarization (Pr), synaptic conductance linearity, and reliability characteristics. In this study, we demonstrate improved FE and artificial synaptic characteristics using an atomic layer-deposited (ALD) lanthanum-doped HfO2 (La:HfO2) and TaN electrode in the structure of an FE thin-film transistor (ITO/IGZO/La:HfO2/TaN), where indium-tin oxide (ITO) and indium-gallium-zinc oxide (IGZO) were used as source/drain and channel materials, respectively. Improved Pr and lower surface roughness were achieved by doped HfO2 and ALD TaN thin films. This synaptic transistor shows long-term potentiation and long-term depression with 200 levels of conductance states, high linearity (Ap, 0.97; Ad, 0.86), high Gmax/Gmin (∼6.1), and low cycle-to-cycle variability. In addition, a pattern recognition accuracy higher than 90% was achieved in an artificial neural network simulation.

Stress and Curvature Effects in Layered 2D Ferroelectric CuInP2S6

Nanoscale ferroelectric 2D materials offer the opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on polarization in CIPS via piezoresponse force microscopy and spectroscopy. To explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS, we introduce the finite element Landau-Ginzburg-Devonshire model, revealing strong changes in hysteresis characteristics in regions subjected to tensile and compressive strain. The piezoresponse force microscopy (PFM) results show that bending induces ferrielectric domains in CIPS, and the polarization-voltage hysteresis loops differ in bending and nonbending regions. These studies offer insights into the fabrication of curvature-engineered nanoelectronic devices.

Theory for anisotropic local ferroelectric switching

Theoretical modeling of polarization switching around a biased tip contact is important for fundamental understanding and advanced applications of ferroelectrics. Here we propose a simple in-plane two-dimensional model that considers surface charge transport and the associated evolution of the electric field driving domain growth. The model reproduces peculiar domain shapes ranging from round to faceted in KTiOPO4(C2vsymmetry) and LiNbO3(C3vsymmetry). This is done through modulation of dielectric permittivity, which mimics domain wall pinning on the lattice. In contrast to previous works, which attempted to justify domain anisotropy by means of point symmetry invariants, here we illustrate the necessity of taking translational symmetry into account. The results are pertinent to ferroelectric racetrack memories and other applications requiring domain tailoring.

Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal-oxide-semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors that are nearly free of polarization "wake-up"─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T-O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. These results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

Design and Piezoelectric Energy Harvesting Properties of a Ferroelectric Cyclophosphazene Salt

Cyclophosphazenes offer a robust and easily modifiable platform for a diverse range of functional systems that have found applications in a wide variety of areas. Herein, for the first time, it reports an organophosphazene-based supramolecular ferroelectric [(PhCH2 NH)6 P3 N3 Me]I, [PMe]I. The compound crystallizes in the polar space group Pc and its thin-film sample exhibits remnant polarization of 5 µC cm-2 . Vector piezoresponse force microscopy (PFM) measurements indicated the presence of multiaxial polarization. Subsequently, flexible composites of [PMe]I are fabricated for piezoelectric energy harvesting applications using thermoplastic polyurethane (TPU) as the matrix. The highest open-circuit voltages of 13.7 V and the maximum power density of 34.60 µW cm-2 are recorded for the poled 20 wt.% [PMe]I/TPU device. To understand the molecular origins of the high performance of [PMe]I-based mechanical energy harvesting devices, piezoelectric charge tensor values are obtained from DFT calculations of the single crystal structure. These indicate that the mechanical stress-induced distortions in the [PMe]I crystals are facilitated by the high flexibility of the layered supramolecular assembly.

Exploring the BiFeO3-PbTiO3-SrTiO3 Ternary System to Obtain Good Piezoelectrical Properties at Low and High Temperatures

In this work, we investigated the piezoelectric properties of BiFeO3-rich (1 - (y + x)) BiFeO3-y PbTiO3-x SrTiO3 (0.1 ≤ x ≤ 0.35; 0.1 ≤ y ≤ 0.3) bulk piezoceramics, as this system could potentially lead to the development of bulk piezoelectric ceramics that are suitable for high-temperature applications (>200 °C). Samples with various levels of PbTiO3 and SrTiO3 were prepared via a conventional solid-state route. X-ray diffraction confirmed a pure perovskite phase for the compositions, which was explored without secondary phases. It was found that the addition of comparable levels of PbTiO3 and SrTiO3 to the BiFeO3 ceramic resulted in higher piezoelectric properties compared to those of the pure BiFeO3 and binary systems. The Curie temperature was significantly reduced by dual doping, with SrTiO3 and PbTiO3 additions resulting in comparable Curie temperature depressions. The locations of the phase boundaries between the cubic, pseudocubic, and rhombohedral crystal structures were determined. The highest piezoelectric properties, including a d33 value of 250 pC/N at room temperature, were obtained for the samples with the composition x = 0.3, y = 0.25, which was close to the cubic-pseudocubic phase boundary in the phase diagram. The temperature dependence of the piezoelectric properties varied depending on the previous thermal history, yet an appropriate heat treatment resulted in an almost temperature-stable d33 value. The ceramic with the lowest temperature sensitivity and a high Curie temperature of 350 °C was found for x = 0.1, y = 0.2 with a d33 value of 60 pC/N at RT and 71 pC/N at 300 °C (after poling at 60 kV/cm and a stabilizing heat treatment). However, the materials developed were still unsuitable for applications at high temperatures due to a rapidly increasing electrical conductivity with increasing temperature.

Anisotropic Properties of Epitaxial Ferroelectric Lead-Free 0.5[Ba(Ti0.8Zr0.2)O3]-0.5(Ba0.7Ca0.3)TiO3 Films

As the energy demand is expected to double over the next 30 years, there has been a major initiative towards advancing the technology of both energy harvesting and storage for renewable energy. In this work, we explore a subset class of dielectrics for energy storage since ferroelectrics offer a unique combination of characteristics needed for energy storage devices. We investigate ferroelectric lead-free 0.5[Ba(Ti0.8Zr0.2)O3]-0.5(Ba0.7Ca0.3)TiO3 epitaxial thin films with different crystallographic orientations grown by pulsed laser deposition. We focus our attention on the influence of the crystallographic orientation on the microstructure, ferroelectric, and dielectric properties. Our results indicate an enhancement of the polarization and strong anisotropy in the dielectric response for the (001)-oriented film. The enhanced ferroelectric, energy storage, and dielectric properties of the (001)-oriented film is explained by the coexistence of orthorhombic-tetragonal phase, where the disordered local structure is in its free energy minimum.

Advantages of Ferroelectrics as a Component of Heterostructures for Electronic Purposes: A DFT Insight

The main advantage of using ferroelectric materials as a component of complex heterostructures is the ability to tune various properties of the whole system by means of an external electric field. In particular, the electric field may change the polarization direction within the ferroelectric material and consequently affect the structural properties, which in turn affects the electronic and magnetic properties of the neighboring material. In addition, ferroelectrics allow the electrostriction phenomenon to proceed, which is promising and can be used to affect the magnetic states of the interface state in the heterostructure through a magnetic component. The interfacial phenomena are of great interest, as they provide extended functionality useful for next-generation electronic devices. Following the idea of utilizing ferroelectrics in heterostructural components in the present works, we consider 2DEG, the Rashba effect, the effect of magnetoelectric coupling, and magnetostriction in order to emphasize the advantages of such heterostructures as components of devices. For this purpose, model systems of LaMnO3/BaTiO3, La2CuO4/BaTiO3, Bi/BaTiO3, and Bi/PbTiO3, Fe/BaTiO3 heterostructures are investigated using density functional theory calculations.

Onset of Multiferroicity in Prototypical Single-Spin Cycloid BiFeO3 Thin Films

In the room-temperature magnetoelectric multiferroic BiFeO3, the noncollinear antiferromagnetic state is coupled to the ferroelectric order, opening applications for low-power electric-field-controlled magnetic devices. While several strategies have been explored to simplify the ferroelectric landscape, here we directly stabilize a single-domain ferroelectric and spin cycloid state in epitaxial BiFeO3 (111) thin films grown on orthorhombic DyScO3 (011). Comparing them with films grown on SrTiO3 (111), we identify anisotropic in-plane strain as a powerful handle for tailoring the single antiferromagnetic state. In this single-domain multiferroic state, we establish the thickness limit of the coexisting electric and magnetic orders and directly visualize the suppression of the spin cycloid induced by the magnetoelectric interaction below the ultrathin limit of 1.4 nm. This as-grown single-domain multiferroic configuration in BiFeO3 thin films opens an avenue both for fundamental investigations and for electrically controlled noncollinear antiferromagnetic spintronics.

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state-of-the-art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub-30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device-to-device-variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing-in-memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.

Effect of sub-micron grains and defect-dipole interactions on dielectric properties of iron, cobalt, and copper doped barium titanate ceramics

Introduction: Dilutely doped ferroelectric materials are of interest, as engineering these materials by introducing point defects via doping often leads to unique behavior not otherwise achievable in the undoped material. For example, B-site doping with transition metals in barium titanate (BaTiO3, or BTO) creates defect dipoles via oxygen vacancies leading enhanced polarization, strain, and the ability to tune dielectric properties. Though defect dipoles should lead to dielectric property enhancements, the effect of grain size in polycrystalline ferroelectrics such as BTO plays a significant role in those properties as well. Methods: Herein, doped BTO with 1.0% copper (Cu), iron (Fe), or cobalt (Co) was synthesized using traditional solid-state processing to observe the contribution of both defect-dipole formation and grain size on the ferroelectric and dielectric properties. Results and discussion: 1.0% Cu doped BTO showed the highest polarization and strain (9.3 μC/cm2 and 0.1%, respectively) of the three doped BTO samples. While some results, such as the aforementioned electrical properties of the 1.0% Cu doped BTO can be explained by the strong chemical driving force of the Cu atoms to form defect dipoles with oxygen vacancies and copper's consistent +2 valency leading to stable defect-dipole formation (versus the readily mixed valency states of Fe and Co at +2/+3), other properties cannot. For instance, all three Tc values should fall below that of undoped BTO (typically 120°C-135°C), but the Tc of 1.0% Cu BTO actually exceeds that range (139.4°C). Data presented on the average grain size and distribution of grain sizes provides insight allowing us to decouple the effect of defect dipoles and the effect of grain size on properties such as Tc, where the 1.0% Cu BTO was shown to possess the largest overall grains, leading to its increase in Tc. Conclusion/future work: Overall, the 1% Cu BTO possessed the highest polarization, strain, and Tc and is a promising dopant for engineering the performance of the material. This work emphasizes the challenge of extricating one effect (such as defect-dipole formation) from another (grain size modification) inherent to doping polycrystalline BTO.

Engineering Ferroelectricity and Large Piezoelectricity in h-BN

Hexagonal boron nitride (h-BN) is a well-known layered van der Waals (vdW) material that exhibits no spontaneous electric polarization due to its centrosymmetric structure. Extensive density functional theory (DFT) calculations are used to demonstrate that doping through the substitution of B by isovalent Al and Ga breaks the inversion symmetry and induces local dipole moments along the c-axis, which promotes a ferroelectric (FE) alignment over antiferroelectric. For doping concentrations below 25%, a "protruded layered" structure in which the dopant atoms protrude out of the planar h-BN layers is energetically more stable than the flat layered structure of pristine h-BN or a wurtzite structure similar to w-AlN. The computed polarization, between 7.227 and 21.117 μC/cm2, depending on dopant concentration and the switching barrier (16.684 and 45.838 meV/atom) for the FE polarization reversal are comparable to that of other well-known FEs. Interestingly, doping of h-BN also induces a large negative piezoelectric response in otherwise nonpiezoelectric h-BN. For example, we compute d33 of -24.214 pC/N for Ga0.125B0.875N, which is about 5 times larger than that of pure w-AlN (5 pC/N), although the computed e33 (-1.164 C/m2) is about 1.6 times lower than that of pure w-AlN (1.462 C/m2). Because of the layered structure, the rather small elastic constant C33 provides the origin of the large d33. Moreover, doping makes h-BN an electric auxetic piezoelectric. We also show that ferroelectricity in doped h-BN may persist down to its trilayer, which indicates high potential for applications in FE nonvolatile memories.

Ferroelectric Switching at Symmetry-Broken Interfaces by Local Control of Dislocations Networks

Semiconducting ferroelectric materials with low energy polarization switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Recently discovered interfacial ferroelectricity in bilayers of transition metal dichalcogenide films provides an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of 2D material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible evolution is understood using a string-like model of the domain wall network (DWN). Two characteristic regimes of DWN evolution are identified: (i) elastic bending of partial screw dislocations separating smaller domains with twin stackings due to mutual sliding of monolayers at domain boundaries and (ii) merging of primary domain walls into perfect screw dislocations, which become the seeds for the recovery of the initial domain structure upon reversing electric field. These results open the possibility to achieve full control over atomically thin semiconducting ferroelectric domains using local electric fields, which is a critical step towards their technological use.

Attack Resilient True Random Number Generators Using Ferroelectric-Enhanced Stochasticity in 2D Transistor

By harnessing the physically unclonable properties, true random number generators (TRNGs) offer significant promises to alleviate security concerns by generating random bitstreams that are cryptographically secured. However, fundamental challenges remain as conventional hardware often requires complex circuitry design, showing a predictable pattern that is susceptible to machine learning attacks. Here, a low-power self-corrected TRNG is presented by exploiting the stochastic ferroelectric switching and charge trapping in molybdenum disulfide (MoS2 ) ferroelectric field-effect transistors (Fe-FET) based on hafnium oxide complex. The proposed TRNG exhibits enhanced stochastic variability with near-ideal entropy of ≈1.0, Hamming distance of ≈50%, independent autocorrelation function, and reliable endurance cycle against temperature variations. Furthermore, its unpredictable feature is systematically examined by machine learning attacks, namely the predictive regression model and the long-short-term-memory (LSTM) approach, where nondeterministic predictions can be concluded. Moreover, the generated cryptographic keys from the circuitry successfully pass the National Institute of Standards and Technology (NIST) 800-20 statistical test suite. The potential of integrating ferroelectric and 2D materials is highlighted for advanced data encryption, offering a novel alternative to generate truly random numbers.

From Ferroelectric Material Optimization to Neuromorphic Devices

Due to the voltage driven switching at low voltages combined with nonvolatility of the achieved polarization state, ferroelectric materials have a unique potential for low power nonvolatile electronic devices. The competitivity of such devices is hindered by compatibility issues of well-known ferroelectrics with established semiconductor technology. The discovery of ferroelectricity in hafnium oxide changed this situation. The natural application of nonvolatile devices is as a memory cell. Nonvolatile memory devices also built the basis for other applications like in-memory or neuromorphic computing. Three different basic ferroelectric devices can be constructed: ferroelectric capacitors, ferroelectric field effect transistors and ferroelectric tunneling junctions. In this article first the material science of the ferroelectricity in hafnium oxide will be summarized with a special focus on tailoring the switching characteristics towards different applications.The current status of nonvolatile ferroelectric memories then lays the ground for looking into applications like in-memory computing. Finally, a special focus will be given to showcase how the basic building blocks of spiking neural networks, the neuron and the synapse, can be realized and how they can be combined to realize neuromorphic computing systems. A summary, comparison with other technologies like resistive switching devices and an outlook completes the paper.

Tunable electronic and optical properties of ferroelectric WS2/Ga2O3heterostructures

To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong intrinsic ferroelectricity is promising for applications in the design of new electronic devices. The polarization reversal transitions of 2D ferroelectric Ga2O3layers provide a new approach to explore the electronic structure and optical properties of modulated WS2/Ga2O3vdWHs. The WS2/Ga2O3↑ and WS2/Ga2O3↓ vdWHs are designed to explore possible characteristics through the electric field and biaxial strain. The biaxial strain can effectively modulate the mutual transition of two mode vdWHs in type II and type I band alignment. The strain engineering enhances the optical absorption properties of vdWHs, encompassing excellent optical absorption properties in the range from infrared to visible to ultraviolet, ensuring promising applications in flexible electronics and optical devices. Based on the highly modifiable physical properties of the WS2/Ga2O3vdWHs, we have further explored the potential applications for the field-controlled switching of the channel in MOSFET devices.

Dielectric phenomena of multiferroic oxides at acoustic- and radio-frequency

In this review, an overview of acoustic- and radio-frequency frequency dielectric properties of multiferroic oxides, the significant dynamic response of electrical polarization to small external ac electrical fields, are present based on the reports in literatures and our recent experimental progresses. The review is begun with some basic terms, concepts and mechanisms associated with dielectric response and dielectric anomalies, namely dielectric peak and plateau upon varying temperatures and dielectric relaxations upon varying frequencies. Subsequently, a variety of quantitative analyses and descriptions of various dielectric effects, including dielectric relaxation, relaxational and transport dynamics, ac conductivity, equivalent circuit models and impedance spectroscopy, are summarized in details. Next is the kernel section. We thoroughly outline various physical mechanisms behind acoustic-/radio-frequency dielectric responses and anomalies of multiferroic oxides. Spin order transition/spin rotation, charge disorder-order transition, exchange striction of the spin interactions, spin-dependentp-dhybridization mechanism, quantum electric-dipole liquids, the interaction of spin order and quantum paraelectric, the motions of charged defects and carriers, quasi-intrinsic and extrinsic heterogeneous interfaces, polar relaxor and multiglass, ferroic domain wall/boundary motions, etc, are involved in these mechanisms. Meanwhile, particular emphasis is placed on intrinsic or extrinsic magnetodielectric effects and related mechanisms in multiferroic oxides. Finally, the review ends with a short perspective of future dielectric research in multiferroic oxides. This review is able to provide the detailed and unique insights into abundant underlying fundamental physics in multiferroic oxides as well as the potential multiferroics-based technological applications.

Polarization-Dependent Large Photorefractive Effect In A Wide Bandgap 2D Metal Halide Ferroelectric

Photorefractive effect of ferroelectrics refers to the light-induced change of refractive index, which is an optical controlling avenue in holographic storage and image processing. For most ferroelectrics, however, the small photorefractive effect (10-5 -10-4 ) hinders their practical application and it is urgent to exploit new photorefractive system. Here, for the first time, strong photorefractive effects are achieved in a 2D metal-halide ferroelectric, [CH3 (CH2 )3 NH3 ]2 (CH3 NH3 )Pb2 Cl7 (1), showing large spontaneous polarization (≈4.1 µC cm-2 ) and wide optical bandgap (≈3.20 eV). Notably, under light irradiation, 1 enables a large variation of refractive indices up to ≈ 1× 10-3 , being one order higher than the existing materials and comparable to the state-of-the-art inorganic ferroelectrics. This intriguing photorefractive behavior involves with the sharp variation of polarization caused by photo-pyroelectricity. As the first report of 2D metal-halide photorefractive ferroelectric, this work sheds light on optical controlling of physical properties in electric-ordered materials.

Facile Control of Ferroelectricity Driven by Ingenious Interaction Engineering

Construction of ferroelectric and optimization of macroscopic polarization has attracted tremendous attention for next generation light weight and flexible devices, which brings fundamental vitality for molecular ferroelectrics. However, effective molecular tailoring toward cations makes ferroelectric synthesis and modification relatively elaborate. Here, the study proposes a facile method to realize triggering and optimization of ferroelectricity. The experimental and theoretical investigation reveals that orientation and alignment of polar cations, dominated factors in molecular ferroelectrics, can be controlled by easily processed anionic modification. In one respect, ferroelectricity is induced by strengthened intermolecular interaction. Moreover, ≈50% of microscopic polarization enhancement (from 8.07 to 11.68 µC cm-2 ) and doubling of equivalent polarization direction (from 4 to 8) are realized in resultant ferroelectric FEtQ2ZnBrI3 (FEQZBI, FEtQ = N-fluoroethyl-quinuclidine). The work offers a totally novel platform for control of ferroelectricity in organic-inorganic hybrid ferroelectrics and a deep insight of structure-property correlations.