51
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 110] [Impact Index Per Article: 36.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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52
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Li G, Ma S, Li Z, Zhang Y, Diao J, Xia L, Zhang Z, Huang Y. High-Quality Ferromagnet Fe 3GeTe 2 for High-Efficiency Electromagnetic Wave Absorption and Shielding with Wideband Radar Cross Section Reduction. ACS NANO 2022; 16:7861-7879. [PMID: 35467351 DOI: 10.1021/acsnano.2c00512] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A high-quality Fe3GeTe2 single crystal with good electrical, magnetic, and electromagnetic wave absorption and shielding properties was prepared in a large quantity (10 g level) by solid-phase sintering and recrystallization method, which would promote its in-depth research and practical application. It has good room-temperature electrical properties with a mobility of 42 cm2/V·s, a sheet (bulk) carrier concentration of +1.64 × 1018 /cm2 (+3.28 × 1020 /cm3), and a conductivity of 2196.35 S/cm. Also, a Curie temperature of 238 K indicates the high magnetic transition temperature and a paramagnetic Curie temperature of 301 K shows the large ferromagnetic-paramagnetic transition zone induced by the residual short-range ferromagnetic domains. Particularly, Fe3GeTe2 is in a loosely packed state when used as a loss agent; the electromagnetic wave absorption with a reflection loss of -34.7 dB at 3.66 GHz under thin thickness was shown. Meanwhile, the absorption band can be effectively regulated by varying the thickness. Moreover, Fe3GeTe2 in a close-packed state exhibits terahertz shielding values of 75.1 and 103.2 dB at very thin thicknesses of 70 and 380 μm, and the average shielding value is higher than 47 dB, covering the entire bandwidth from 0.1 to 3.0 THz. Furthermore, by using Fe3GeTe2 as a patch, the wideband radar cross-section can be effectively reduced by up to 33 dBsm. Resultantly, Fe3GeTe2 will be a promising candidate in the electromagnetic protection field.
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Affiliation(s)
- Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Jianglin Diao
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Lun Xia
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Zhiwei Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300350, P. R. China
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53
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Noah A, Alpern H, Singh S, Gutfreund A, Zisman G, Feld TD, Vakahi A, Remennik S, Paltiel Y, Huber ME, Barrena V, Suderow H, Steinberg H, Millo O, Anahory Y. Interior and Edge Magnetization in Thin Exfoliated CrGeTe 3 Films. NANO LETTERS 2022; 22:3165-3172. [PMID: 35271282 PMCID: PMC9011403 DOI: 10.1021/acs.nanolett.1c04665] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 03/04/2022] [Indexed: 06/02/2023]
Abstract
CrGeTe3 (CGT) is a semiconducting vdW ferromagnet shown to possess magnetism down to a two-layer thick sample. Although CGT is one of the leading candidates for spintronics devices, a comprehensive analysis of CGT thickness dependent magnetization is currently lacking. In this work, we employ scanning SQUID-on-tip (SOT) microscopy to resolve the magnetic properties of exfoliated CGT flakes at 4.2 K. Combining transport measurements of CGT/NbSe2 samples with SOT images, we present the magnetic texture and hysteretic magnetism of CGT, thereby matching the global behavior of CGT to the domain structure extracted from local SOT magnetic imaging. Using this method, we provide a thickness dependent magnetization state diagram of bare CGT films. No zero-field magnetic memory was found for films thicker than 10 nm, and hard ferromagnetism was found below that critical thickness. Using scanning SOT microscopy, we identify a unique edge magnetism, contrasting the results attained in the CGT interior.
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Affiliation(s)
- Avia Noah
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Hen Alpern
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
- Department
of Applied Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
| | - Sourabh Singh
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Alon Gutfreund
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Gilad Zisman
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Tomer D. Feld
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Atzmon Vakahi
- Center
for Nanoscience and Nanotechnology, Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Sergei Remennik
- Center
for Nanoscience and Nanotechnology, Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Yossi Paltiel
- Department
of Applied Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
| | - Martin Emile Huber
- Departments
of Physics and Electrical Engineering, University
of Colorado Denver, Denver, Colorado 80217, United States
| | - Victor Barrena
- Laboratorio
de Bajas Temperaturas, Unidad Asociada UAM/CSIC, Departamento de Física
de la Materia Condensada, Instituto Nicolás Cabrera and Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| | - Hermann Suderow
- Laboratorio
de Bajas Temperaturas, Unidad Asociada UAM/CSIC, Departamento de Física
de la Materia Condensada, Instituto Nicolás Cabrera and Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| | - Hadar Steinberg
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Oded Millo
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
| | - Yonathan Anahory
- Racah
Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
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54
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Peng B, Chen Z, Li Y, Liu Z, Liang D, Deng L. Multiwavelength magnetic coding of helical luminescence in ferromagnetic 2D layered CrI 3. iScience 2022; 25:103623. [PMID: 35005559 PMCID: PMC8718829 DOI: 10.1016/j.isci.2021.103623] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2021] [Revised: 11/15/2021] [Accepted: 12/10/2021] [Indexed: 11/01/2022] Open
Abstract
Two-dimensional (2D) van der Waals (vdW) ferromagnets have opened new avenues for manipulating spin at the limits of single or few atomic layers, and for creating unique magneto-exciton devices through the coupling of ferromagnetic (FM) orders and excitons. However, 2D vdW ferromagnets explored so far have rarely possessed exciton behaviors; to date, FM CrI3 have been revealed to show ligand-field photoluminescence correlated with FM ordering, but typically with a broad emission peak. Here, we report a straightforward approach to realize strong coupling of narrow helical emission and FM orders in CrI3 through microsphere cavity. The resonant whispering-gallery modes (WGM) of SiO2 microspheres cause strong oscillation helical emissions with a full width at half-maximum (FWHM) of ∼5 nm under continuous wave excitation. Reversible magnetic coding of helical luminescence is realized in the range of 950-1100 nm. This work enables numerous opportunities for creating magnetic encoding lasing for photonic integrated chips.
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Affiliation(s)
- Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhiyong Chen
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yue Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhen Liu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Difei Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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55
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Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications. COATINGS 2022. [DOI: 10.3390/coatings12020122] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.
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56
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Wang S, Xu J, Li W, Sun S, Gao S, Hou Y. Magnetic Nanostructures: Rational Design and Fabrication Strategies toward Diverse Applications. Chem Rev 2022; 122:5411-5475. [PMID: 35014799 DOI: 10.1021/acs.chemrev.1c00370] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
In recent years, the continuous development of magnetic nanostructures (MNSs) has tremendously promoted both fundamental scientific research and technological applications. Different from the bulk magnet, the systematic engineering on MNSs has brought a great breakthrough in some emerging fields such as the construction of MNSs, the magnetism exploration of multidimensional MNSs, and their potential translational applications. In this review, we give a detailed description of the synthetic strategies of MNSs based on the fundamental features and application potential of MNSs and discuss the recent progress of MNSs in the fields of nanomedicines, advanced nanobiotechnology, catalysis, and electromagnetic wave adsorption (EMWA), aiming to provide guidance for fabrication strategies of MNSs toward diverse applications.
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Affiliation(s)
- Shuren Wang
- Beijing Key Laboratory of Magnetoelectric Materials and Devices, School of Materials Science and Engineering, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Junjie Xu
- Beijing Key Laboratory of Magnetoelectric Materials and Devices, School of Materials Science and Engineering, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Wei Li
- Beijing Key Laboratory of Magnetoelectric Materials and Devices, School of Materials Science and Engineering, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Shengnan Sun
- Beijing Key Laboratory of Magnetoelectric Materials and Devices, School of Materials Science and Engineering, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Song Gao
- Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.,Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou 511442, China
| | - Yanglong Hou
- Beijing Key Laboratory of Magnetoelectric Materials and Devices, School of Materials Science and Engineering, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
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57
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Pei K, Liu S, Yang L, Zhang E, Zhang R, Yang C, Ai L, Li Z, Xiu F, Che R. Controllable Domain Walls in Two-Dimensional Ferromagnetic Material Fe 3GeTe 2 Based on the Spin-Transfer Torque Effect. ACS NANO 2021; 15:19513-19521. [PMID: 34894654 DOI: 10.1021/acsnano.1c06361] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, two-dimensional magnetic material has attracted attention worldwide due to its potential application in magnetic memory devices. The previous concept of domain walls driven by current pulses is a disordered motion. Further investigation of the mechanism is urgently lacking. Here, Fe3GeTe2, a typical high-Curie temperature (TC) two-dimensional magnetic material, is chosen to explore the magnetic domain dynamics by in situ Lorentz transmission electron microscopy experiments. It has been found that the stripe domain could be driven, compressed, and expanded by the pulses with a critical current density. Revealed by micromagnetic simulations, all the domain walls cannot move synchronously due to the competition between demagnetization energy and spin-transfer torque effect. In consideration of the reflection of high-frequency pulses, the disordered motion could be well explained together. The multiple stable states of the magnetic structure due to the weak exchange interaction in a two-dimensional magnet provides complex dynamic processes. Based on plenty of experiments, a cluster of domain walls could be more steady and move more synchronously under the drive of pulse current. The complication of domain wall motions presents a challenge in race track memory devices and two-dimensional magnetic material will be a better choice for application research.
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Affiliation(s)
- Ke Pei
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Liting Yang
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Ruixuan Zhang
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Chendi Yang
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Renchao Che
- Laboratory of Advanced Materials, Department of Materials Science and Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, China
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58
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Hu L, Zhou J, Hou Z, Su W, Yang B, Li L, Yan M. Polymer-buried van der Waals magnets for promising wearable room-temperature spintronics. MATERIALS HORIZONS 2021; 8:3306-3314. [PMID: 34751291 DOI: 10.1039/d1mh01439k] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The demand for high-performance spintronic devices has boosted intense research on the manipulation of magnetism in van der Waals (vdW) magnets. Despite great efforts, robust ferromagnetic transitions above room temperature still face significant hurdles. Strain engineering can reversibly regulate magnetic exchange, but the degree of regulation is still impractical for most magnetic applications. Hereby we employ a large-strain transferrer to produce tunable strains of up to 4.7%, which induces authentic room-temperature ferromagnetism in large-area Fe3GeTe2 nanoflakes with 20-fold improvement in magnetization. The record increment of the Curie temperature (TC) of well above 400 K originates from the strain-enhanced magnetic anisotropy and excellent magnetoelastic coupling. The correlation between the emerging ferromagnetism and Raman spectral evolution is also established, which complements well the TC phase diagram in a large-strain region. In addition, an unusual exchange bias effect with a vertical magnetization shift is tracked for the first time upon bending, which reveals the hidden competition between antiferromagnetic and ferromagnetic coupling. The reversible strain manipulation of single-domain ferromagnetic order in a single nanoflake further opens up a route to develop low-power wearable spintronic devices. The findings here provide vast opportunities to exploit the possibility of practical applications of more vdW magnets.
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Affiliation(s)
- Liang Hu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
- State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Jian Zhou
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Zhipeng Hou
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Weitao Su
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Bingzhang Yang
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Lingwei Li
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Mi Yan
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
- State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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Kim SJ, Choi D, Kim KW, Lee KY, Kim DH, Hong S, Suh J, Lee C, Kim SK, Park TE, Koo HC. Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures. ACS NANO 2021; 15:16395-16403. [PMID: 34608798 DOI: 10.1021/acsnano.1c05790] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Interface engineering is an effective approach to tune the magnetic properties of van der Waals (vdW) magnets and their heterostructures. The prerequisites for the practical utilization of vdW magnets and heterostructures are a quantitative analysis of their magnetic anisotropy and the ability to modulate their interfacial properties, which have been challenging to achieve with conventional methods. Here we characterize the magnetic anisotropy of Fe3GeTe2 layers by employing the magnetometric technique based on anomalous Hall measurements and confirm its intrinsic nature. In addition, on the basis of the thickness dependences of the anisotropy field, we identify the interfacial and bulk contributions. Furthermore, we demonstrate that the interfacial anisotropy in Fe3GeTe2-based heterostructures is locally controlled by adjacent layers, leading to the realization of multiple magnetic behaviors in a single channel. This work proposes that the magnetometric technique is a useful platform for investigating the intrinsic properties of vdW magnets and that functional devices can be realized by local interface engineering.
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Affiliation(s)
- Sung Jong Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Dongwon Choi
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Kyoung-Whan Kim
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Ki-Young Lee
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Duck-Ho Kim
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Seokmin Hong
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Changgu Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Se Kwon Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea
| | - Tae-Eon Park
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Hyun Cheol Koo
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
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60
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Tunable room-temperature ferromagnetism in Co-doped two-dimensional van der Waals ZnO. Nat Commun 2021; 12:3952. [PMID: 34172740 PMCID: PMC8233323 DOI: 10.1038/s41467-021-24247-w] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2020] [Accepted: 05/28/2021] [Indexed: 11/09/2022] Open
Abstract
The recent discovery of ferromagnetism in two-dimensional van der Waals crystals has provoked a surge of interest in the exploration of fundamental spin interaction in reduced dimensions. However, existing material candidates have several limitations, notably lacking intrinsic room-temperature ferromagnetic order and air stability. Here, motivated by the anomalously high Curie temperature observed in bulk diluted magnetic oxides, we demonstrate room-temperature ferromagnetism in Co-doped graphene-like Zinc Oxide, a chemically stable layered material in air, down to single atom thickness. Through the magneto-optic Kerr effect, superconducting quantum interference device and X-ray magnetic circular dichroism measurements, we observe clear evidences of spontaneous magnetization in such exotic material systems at room temperature and above. Transmission electron microscopy and atomic force microscopy results explicitly exclude the existence of metallic Co or cobalt oxides clusters. X-ray characterizations reveal that the substitutional Co atoms form Co2+ states in the graphitic lattice of ZnO. By varying the Co doping level, we observe transitions between paramagnetic, ferromagnetic and less ordered phases due to the interplay between impurity-band-exchange and super-exchange interactions. Our discovery opens another path to 2D ferromagnetism at room temperature with the advantage of exceptional tunability and robustness.
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61
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Hopkinson DG, Seki T, Clark N, Chen R, Zou Y, Kimura A, Gorbachev RV, Thomson T, Shibata N, Haigh SJ. Nanometre imaging of Fe 3GeTe 2 ferromagnetic domain walls. NANOTECHNOLOGY 2021; 32:205703. [PMID: 33624615 DOI: 10.1088/1361-6528/abe32b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Fe3GeTe2 is a layered crystal which has recently been shown to maintain its itinerant ferromagnetic properties even when atomically thin. Here, differential phase contrast scanning transmission electron microscopy is used to investigate the domain structure in a Fe3GeTe2 cross-sectional lamella at temperatures ranging from 95 to 250 K and at nanometre spatial resolution. Below the experimentally determined Curie temperature (T C) of 191 K, stripe domains magnetised along 〈0001〉, bounded with 180◦ Bloch type domain walls, are observed, transitioning to mixed Bloch-Néel type where the cross-sectional thickness is reduced below 50 nm. When warming towards T C, these domains undergo slight restructuring towards uniform size, before abruptly fading at T C. Localised loss of ferromagnetic order is seen over time, hypothesised to be a frustration of ferromagnetic order from ambient oxidation and basal cracking, which could enable selective modification of the magnetic properties for device applications.
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Affiliation(s)
- David G Hopkinson
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
| | - Takehito Seki
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Nicholas Clark
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
| | - Runze Chen
- Department of Computer Science, The University of Manchester, M13 9PL, United Kingdom
| | - Yichao Zou
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
| | - Ayumi Kimura
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Roman V Gorbachev
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Physics & Astronomy, The University of Manchester, M13 9PL, United Kingdom
| | - Thomas Thomson
- Department of Computer Science, The University of Manchester, M13 9PL, United Kingdom
| | - Naoya Shibata
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
- Nanostructures Research Laboratory, Japan Fine Ceramic Center, Atsuta, Nagoya 456-8587, Japan
| | - Sarah J Haigh
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
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62
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He J, Li S, Bandyopadhyay A, Frauenheim T. Unravelling Photoinduced Interlayer Spin Transfer Dynamics in Two-Dimensional Nonmagnetic-Ferromagnetic van der Waals Heterostructures. NANO LETTERS 2021; 21:3237-3244. [PMID: 33749285 DOI: 10.1021/acs.nanolett.1c00520] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Although light is the fastest means to manipulate the interfacial spin injection and magnetic proximity related quantum properties of two-dimensional (2D) magnetic van der Waals (vdW) heterostructures, its potential remains mostly untapped. Here, inspired by the recent discovery of 2D ferromagnets Fe3GeTe2 (FGT), we applied the real-time density functional theory (rt-TDDFT) to study photoinduced interlayer spin transfer dynamics in 2D nonmagnetic-ferromagnetic (NM-FM) vdW heterostructures, including graphene-FGT, silicene-FGT, germanene-FGT, antimonene-FGT and h-BN-FGT interfaces. We observed that laser pulses induce significant large spin injection from FGT to nonmagnetic (NM) layers within a few femtoseconds. In addition, we identified an interfacial atom-mediated spin transfer pathway in heterostructures in which the photoexcited spin of Fe first transfers to intralayered Te atoms and then hops to interlayered NM layers. Interlayer hopping is approximately two times slower than intralayer spin transfer. Our results provide the microscopic understanding for optically control interlayer spin dynamics in 2D magnetic heterostructures.
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Affiliation(s)
- Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 2835, Bremen, Germany
- Department of Physical and Macromolecular Chemistry & Charles University Centre of Advanced Materials, Faculty of Science, Charles University in Prague, Hlavova 8, Prague 2, 128 43, Czech Republic
| | - Shuo Li
- Department of Physical and Macromolecular Chemistry & Charles University Centre of Advanced Materials, Faculty of Science, Charles University in Prague, Hlavova 8, Prague 2, 128 43, Czech Republic
| | - Arkamita Bandyopadhyay
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 2835, Bremen, Germany
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 2835, Bremen, Germany
- Beijing Computational Science Research Center (CSRC), Beijing 100193, China
- Shenzhen Computational Science and Applied Research (CSAR) Institute, Shenzhen 518110, China
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63
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Li H, Min J, Yang Z, Wang Z, Pan S, Oganov AR. Prediction of Novel van der Waals Boron Oxides with Superior Deep-Ultraviolet Nonlinear Optical Performance. Angew Chem Int Ed Engl 2021; 60:10791-10797. [PMID: 33629789 DOI: 10.1002/anie.202015622] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2020] [Indexed: 11/11/2022]
Abstract
Deep-ultraviolet nonlinear optical (DUV NLO) materials are attracting increasing attention because of their structural diversity and complexity. Using the two-dimensional (2D) crystal structure prediction method combined with the first-principles calculations, here we propose layered 18-membered-ring (18MR) boron oxide B2 O3 polymorphs as high-performance NLO materials. 18MR-B2 O3 with the AA and AB stackings are potential DUV NLO materials. The superior performing 18MR-B2 O3 AB has an unprecedentedly high second harmonic generation coefficient of 1.63 pm V-1 , the largest among the DUV NLO materials, three times larger than that of the advanced DUV NLO material KBe2 BO3 F2 and comparable to that of β-BaB2 O4 . Its unusually large birefringence of 0.196 at 400 nm guarantees the phase-matching wavelength λPM to reach this material's extreme absorption edge of ≈154 nm.
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Affiliation(s)
- Hao Li
- CAS key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, 830011, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.,Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel St., Moscow, 121025, Russia
| | - Jingmei Min
- CAS key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, 830011, China
| | - Zhihua Yang
- CAS key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, 830011, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhenhai Wang
- Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel St., Moscow, 121025, Russia.,School of Telecommunication and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu, 210003, China
| | - Shilie Pan
- CAS key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, 830011, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Artem R Oganov
- Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel St., Moscow, 121025, Russia
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64
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Li H, Min J, Yang Z, Wang Z, Pan S, Oganov AR. Prediction of Novel van der Waals Boron Oxides with Superior Deep‐Ultraviolet Nonlinear Optical Performance. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202015622] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
- Hao Li
- CAS key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics & Chemistry CAS Xinjiang Key Laboratory of Electronic Information Materials and Devices 40-1 South Beijing Road Urumqi 830011 China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
- Skolkovo Institute of Science and Technology Skolkovo Innovation Center 3 Nobel St. Moscow 121025 Russia
| | - Jingmei Min
- CAS key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics & Chemistry CAS Xinjiang Key Laboratory of Electronic Information Materials and Devices 40-1 South Beijing Road Urumqi 830011 China
| | - Zhihua Yang
- CAS key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics & Chemistry CAS Xinjiang Key Laboratory of Electronic Information Materials and Devices 40-1 South Beijing Road Urumqi 830011 China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
| | - Zhenhai Wang
- Skolkovo Institute of Science and Technology Skolkovo Innovation Center 3 Nobel St. Moscow 121025 Russia
- School of Telecommunication and Information Engineering Nanjing University of Posts and Telecommunications Nanjing Jiangsu 210003 China
| | - Shilie Pan
- CAS key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics & Chemistry CAS Xinjiang Key Laboratory of Electronic Information Materials and Devices 40-1 South Beijing Road Urumqi 830011 China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
| | - Artem R. Oganov
- Skolkovo Institute of Science and Technology Skolkovo Innovation Center 3 Nobel St. Moscow 121025 Russia
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65
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Gweon HK, Lee SY, Kwon HY, Jeong J, Chang HJ, Kim KW, Qiu ZQ, Ryu H, Jang C, Choi JW. Exchange Bias in Weakly Interlayer-Coupled van der Waals Magnet Fe 3GeTe 2. NANO LETTERS 2021; 21:1672-1678. [PMID: 33570963 DOI: 10.1021/acs.nanolett.0c04434] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals (vdW) magnetic materials provide an ideal platform to study low-dimensional magnetism. However, observations of magnetic characteristics of these layered materials truly distinguishing them from conventional magnetic thin film systems have been mostly lacking. In an effort to investigate magnetic properties unique to vdW magnetic materials, we examine the exchange bias effect, a magnetic phenomenon emerging at the ferromagnetic-antiferromagnetic interface. Exchange bias is observed in the naturally oxidized vdW ferromagnet Fe3GeTe2, owing to an antiferromagnetic ordering in the surface oxide layer. Interestingly, the magnitude and thickness dependence of the effect is unlike those expected in typical thin-film systems. We propose a possible mechanism for this behavior, based on the weak interlayer magnetic coupling inherent to vdW magnets, demonstrating the distinct properties of these materials. Furthermore, the robust and sizable exchange bias for vdW magnets persisting up to relatively high temperatures presents a significant advance for realizing practical two-dimensional spintronics.
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Affiliation(s)
- Hyung Keun Gweon
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Sang Yeop Lee
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hee Young Kwon
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Juyoung Jeong
- Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hye Jung Chang
- Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST school, University of Science and Technology, Seoul 02792, Republic of Korea
| | - Kyoung-Whan Kim
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Zi Qiang Qiu
- Department of Physics, University of California, Berkeley 94720, California, United States
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
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66
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Liu N, Gallaro CM, Shayan K, Mukherjee A, Kim B, Hone J, Vamivakas N, Strauf S. Antiferromagnetic proximity coupling between semiconductor quantum emitters in WSe 2 and van der Waals ferromagnets. NANOSCALE 2021; 13:832-841. [PMID: 33351877 DOI: 10.1039/d0nr06632j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals ferromagnets have gained significant interest due to their unique ability to provide magnetic response even at the level of a few monolayers. Particularly in combination with 2D semiconductors, such as the transition metal dichalcogenide WSe2, one can create heterostructures that feature unique magneto-optical response in the exciton emission through the magnetic proximity effect. Here we use 0D quantum emitters in WSe2 to probe for the ferromagnetic response in heterostructures with Fe3GT and Fe5GT ferromagnets through an all-optical read-out technique that does not require electrodes. The spectrally narrow spin-doublet of the WSe2 quantum emitters allowed to fully resolve the hysteretic magneto-response in the exciton emission, revealing the characteristic signature of both ferro- and antiferromagnetic proximity coupling that originates from the interplay among Fe3GT or Fe5GT, a thin surface oxide, and the spin doublets of the quantum emitters. Our work highlights the utility of 0D quantum emitters for probing interface magnetic dipoles in vdW heterostructures with high precision. The observed hysteretic magneto response in the exciton emission of quantum emitters adds further new degrees of freedom for spin and g-factor manipulation of quantum states.
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Affiliation(s)
- Na Liu
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA. and Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Cosmo M Gallaro
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA. and Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Kamran Shayan
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA and Center for Coherence and Quantum Optics, University of Rochester, Rochester, New York 14627, USA
| | - Arunabh Mukherjee
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA and Center for Coherence and Quantum Optics, University of Rochester, Rochester, New York 14627, USA
| | - Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York 10027, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York 10027, USA
| | - Nick Vamivakas
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA and Center for Coherence and Quantum Optics, University of Rochester, Rochester, New York 14627, USA and Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA. and Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
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67
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Zhang K, Han S, Lee Y, Coak MJ, Kim J, Hwang I, Son S, Shin J, Lim M, Jo D, Kim K, Kim D, Lee HW, Park JG. Gigantic Current Control of Coercive Field and Magnetic Memory Based on Nanometer-Thin Ferromagnetic van der Waals Fe 3 GeTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004110. [PMID: 33283320 DOI: 10.1002/adma.202004110] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Revised: 09/25/2020] [Indexed: 06/12/2023]
Abstract
Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase-transition temperature. Here, it is reported that, surprisingly, an in-plane current can tune the magnetic state of the nanometer-thin van der Waals ferromagnet Fe3 GeTe2 from a hard magnetic state to a soft magnetic state. It is a direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe3 GeTe2 . In addition, a working model of a new nonvolatile magnetic memory based on the principle of the discovery in Fe3 GeTe2 , controlled by a tiny current, is further demonstrated. The findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impact on the future development of spintronic and magnetic memory.
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Affiliation(s)
- Kaixuan Zhang
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Seoul National University, Seoul, 08826, South Korea
| | - Seungyun Han
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Youjin Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Seoul National University, Seoul, 08826, South Korea
| | - Matthew J Coak
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
| | - Junghyun Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Seoul National University, Seoul, 08826, South Korea
| | - Inho Hwang
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Seoul National University, Seoul, 08826, South Korea
| | - Suhan Son
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Seoul National University, Seoul, 08826, South Korea
| | - Jeacheol Shin
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
| | - Mijin Lim
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Daegeun Jo
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Kyoo Kim
- Korea Atomic Energy Research Institute, 111 Daedeok-daero, Daejeon, 34057, South Korea
| | - Dohun Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
| | - Hyun-Woo Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea
- Asia Pacific Center for Theoretical Physics, 77 Cheongam-ro, Nam-gu, Pohang, 3773, South Korea
| | - Je-Geun Park
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea
- Center for Quantum Materials, Seoul National University, Seoul, 08826, South Korea
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68
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Liu B, Liu S, Yang L, Chen Z, Zhang E, Li Z, Wu J, Ruan X, Xiu F, Liu W, He L, Zhang R, Xu Y. Light-Tunable Ferromagnetism in Atomically Thin Fe_{3}GeTe_{2} Driven by Femtosecond Laser Pulse. PHYSICAL REVIEW LETTERS 2020; 125:267205. [PMID: 33449751 DOI: 10.1103/physrevlett.125.267205] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Revised: 09/03/2020] [Accepted: 12/11/2020] [Indexed: 05/16/2023]
Abstract
The recent discovery of intrinsic ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has opened up a new arena for spintronics, raising an opportunity of achieving tunable intrinsic 2D vdW magnetism. Here, we show that the magnetization and the magnetic anisotropy energy (MAE) of few-layered Fe_{3}GeTe_{2} (FGT) is strongly modulated by a femtosecond laser pulse. Upon increasing the femtosecond laser excitation intensity, the saturation magnetization increases in an approximately linear way and the coercivity determined by the MAE decreases monotonically, showing unambiguously the effect of the laser pulse on magnetic ordering. This effect observed at room temperature reveals the emergence of light-driven room-temperature (300 K) ferromagnetism in 2D vdW FGT, as its intrinsic Curie temperature T_{C} is ∼200 K. The light-tunable ferromagnetism is attributed to the changes in the electronic structure due to the optical doping effect. Our findings pave a novel way to optically tune 2D vdW magnetism and enhance the T_{C} up to room temperature, promoting spintronic applications at or above room temperature.
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Affiliation(s)
- Bo Liu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Long Yang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhendong Chen
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Wu
- York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York YO10 5DD, United Kingdom
| | - Xuezhong Ruan
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Wenqing Liu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW20 0EX, United Kingdom
| | - Liang He
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Rong Zhang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yongbing Xu
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York YO10 5DD, United Kingdom
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69
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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70
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Meijer MJ, Lucassen J, Duine RA, Swagten HJ, Koopmans B, Lavrijsen R, Guimarães MHD. Chiral Spin Spirals at the Surface of the van der Waals Ferromagnet Fe 3GeTe 2. NANO LETTERS 2020; 20:8563-8568. [PMID: 33238096 PMCID: PMC7729936 DOI: 10.1021/acs.nanolett.0c03111] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Revised: 11/10/2020] [Indexed: 05/28/2023]
Abstract
Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here, we use scanning electron microscopy with polarization analysis to unveil the presence of chiral counterclockwise Néel spin spirals at the surface of a bulk van der Waals ferromagnet Fe3GeTe2 (FGT) at zero magnetic field. These Néel spin spirals survive up to FGT's Curie temperature of TC = 220 K, with little change in the periodicity p = 300 nm of the spin spiral throughout the studied temperature range. The formation of a spin spiral showing counterclockwise rotation strongly suggests the presence of a positive Dzyaloshinskii-Moriya interaction in FGT, which provides the first steps towards the understanding of the magnetic structure of FGT. Our results additionally pave the way for chiral magnetism in van der Waals materials and their heterostructures.
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Affiliation(s)
- Mariëlle J. Meijer
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Juriaan Lucassen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Rembert A. Duine
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
- Institute
for Theoretical Physics, Utrecht University, Leuvenlaan 4, 3584 CE, Utrecht, The Netherlands
| | - Henk J.M. Swagten
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Bert Koopmans
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Reinoud Lavrijsen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
| | - Marcos H. D. Guimarães
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
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71
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Li Z, Zhang J, Zhou B. Electric polarization related Dirac half-metallicity in Mn-trihalide Janus monolayers. Phys Chem Chem Phys 2020; 22:26468-26477. [PMID: 33185231 DOI: 10.1039/d0cp05028h] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A two-dimensional Dirac half-metal system, in which the 100% spin polarization and massless Dirac fermions can coexist, will show more advantages on the efficient spin injection and high spin mobility in spintronic devices. Moreover, it is attractive to achieve out-of-plane electric polarization in addition to the Dirac half-metal behavior, because this will open a new horizon in the field of multifunctional devices. In this work, a systematic study is made of Janus monolayers of Mn2X3Y3 (X, Y = Cl, Br and I, X ≠ Y) with asymmetric out-of-plane structural configurations, based on first-principles calculations. We demonstrate that monolayer Mn2X3Y3 freestanding films will remain stable experimentally by using the stability analysis. All the Janus monolayers show a ferromagnetic ground state and maintain their original DHM behavior. However, due to the large electric polarization, the hybridization intensities of Mn and the halogen atoms on both sides of Mn2Cl3I3 are very different, resulting in an obvious distortion of the spin-polarized Dirac cone. The distorted Dirac cone is repaired by the compression, indicating that strain can improve the orbital distortion induced by the electric polarization. All Mn2X3Y3 monolayer have in-plane magnetization anisotropy, which is mainly contributed by heavy halogen elements (Br and I), and the polarized substitution and biaxial strain will not change the easy magnetization orientation of the system. Thus, the electrically polarized Dirac half-metal system has potential for application in multifunctional spintronic devices.
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Affiliation(s)
- Zheng Li
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
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72
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Coughlin AL, Xie D, Yao Y, Zhan X, Chen Q, Hewa-Walpitage H, Zhang X, Guo H, Zhou H, Lou J, Wang J, Li YS, Fertig HA, Zhang S. Near Degeneracy of Magnetic Phases in Two-Dimensional Chromium Telluride with Enhanced Perpendicular Magnetic Anisotropy. ACS NANO 2020; 14:15256-15266. [PMID: 33124799 DOI: 10.1021/acsnano.0c05534] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The discovery of atomically thin van der Waals magnets (e.g., CrI3 and Cr2Ge2Te6) has triggered a renaissance in the study of two-dimensional (2D) magnetism. Most of the 2D magnetic compounds discovered so far host only one single magnetic phase unless the system is at a phase boundary. In this work, we report the near degeneracy of magnetic phases in ultrathin chromium telluride (Cr2Te3) layers with strong perpendicular magnetic anisotropy highly desired for stabilizing 2D magnetic order. Single-crystalline Cr2Te3 nanoplates with a trigonal structure (space group P3̅1c) were grown by chemical vapor deposition. The bulk magnetization measurements suggest a ferromagnetic (FM) order with an enhanced perpendicular magnetic anisotropy, as evidenced by a coercive field as large as ∼14 kOe when the field is applied perpendicular to the basal plane of the thin nanoplates. Magneto-optical Kerr effect studies confirm the intrinsic ferromagnetism and characterize the magnetic ordering temperature of individual nanoplates. First-principles density functional theory calculations suggest the near degeneracy of magnetic orderings with a continuously varying canting from the c-axis FM due to their comparable energy scales, explaining the zero-field kink observed in the magnetic hysteresis loops. Our work highlights Cr2Te3 as a promising 2D Ising system to study magnetic phase coexistence and switches for ultracompact information storage and processing.
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Affiliation(s)
- Amanda L Coughlin
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Dongyue Xie
- Department of Mechanical and Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Yue Yao
- Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Xun Zhan
- Electron Microscope Center, Indiana University, Bloomington, Indiana 47405, United States
| | - Qiang Chen
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Heshan Hewa-Walpitage
- Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Xiaohang Zhang
- Center for Nanophysics & Advanced Materials, University of Maryland, College Park, Maryland 20742, United States
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Haidong Zhou
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jian Wang
- Department of Mechanical and Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Yan S Li
- Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Herbert A Fertig
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
- Quantum Science and Engineering Center, Indiana University, Bloomington, Indiana 47405, United States
| | - Shixiong Zhang
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Quantum Science and Engineering Center, Indiana University, Bloomington, Indiana 47405, United States
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73
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Rhone TD, Chen W, Desai S, Torrisi SB, Larson DT, Yacoby A, Kaxiras E. Data-driven studies of magnetic two-dimensional materials. Sci Rep 2020; 10:15795. [PMID: 32978473 PMCID: PMC7519137 DOI: 10.1038/s41598-020-72811-z] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2019] [Accepted: 09/07/2020] [Indexed: 01/06/2023] Open
Abstract
We use a data-driven approach to study the magnetic and thermodynamic properties of van der Waals (vdW) layered materials. We investigate monolayers of the form \documentclass[12pt]{minimal}
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\begin{document}$$\hbox {A}_2\hbox {B}_2\hbox {X}_6$$\end{document}A2B2X6, based on the known material \documentclass[12pt]{minimal}
\usepackage{amsmath}
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\begin{document}$$\hbox {Cr}_2\hbox {Ge}_2\hbox {Te}_6$$\end{document}Cr2Ge2Te6, using density functional theory (DFT) calculations and machine learning methods to determine their magnetic properties, such as magnetic order and magnetic moment. We also examine formation energies and use them as a proxy for chemical stability. We show that machine learning tools, combined with DFT calculations, can provide a computationally efficient means to predict properties of such two-dimensional (2D) magnetic materials. Our data analytics approach provides insights into the microscopic origins of magnetic ordering in these systems. For instance, we find that the X site strongly affects the magnetic coupling between neighboring A sites, which drives the magnetic ordering. Our approach opens new ways for rapid discovery of chemically stable vdW materials that exhibit magnetic behavior.
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Affiliation(s)
| | - Wei Chen
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Shaan Desai
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Steven B Torrisi
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Daniel T Larson
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Amir Yacoby
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Efthimios Kaxiras
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA.,School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
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74
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Li Z, Xia W, Su H, Yu Z, Fu Y, Chen L, Wang X, Yu N, Zou Z, Guo Y. Magnetic critical behavior of the van der Waals Fe 5GeTe 2 crystal with near room temperature ferromagnetism. Sci Rep 2020; 10:15345. [PMID: 32948794 PMCID: PMC7501290 DOI: 10.1038/s41598-020-72203-3] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 08/27/2020] [Indexed: 12/03/2022] Open
Abstract
The van der Waals ferromagnet Fe5GeTe2 has a Curie temperature TC of about 270 K, which is tunable through controlling the Fe deficiency content and can even reach above room temperature. To achieve insights into its ferromagnetic exchange that gives the high TC, the critical behavior has been investigated by measuring the magnetization in Fe5GeTe2 crystal around the ferromagnetic ordering temperature. The analysis of the measured magnetization by using various techniques harmonically reached to a set of reliable critical exponents with TC = 273.7 K, β = 0.3457 ± 0.001, γ = 1.40617 ± 0.003, and δ = 5.021 ± 0.001. By comparing these critical exponents with those predicted by various models, it seems that the magnetic properties of Fe5GeTe2 could be interpreted by a three-dimensional magnetic exchange with the exchange distance decaying as J(r) ≈ r−4.916, close to that of a three-dimensional Heisenberg model with long-range magnetic coupling.
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Affiliation(s)
- Zhengxian Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hao Su
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhenhai Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Yunpeng Fu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Leiming Chen
- School of Materials Science and Engineering, Henan Key Laboratory of Aeronautic Materials and Application Technology, Zhengzhou University of Aeronautics, Zhengzhou, 450046, Henan, China.
| | - Xia Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Na Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Zhiqiang Zou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
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75
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Yang M, Li Q, Chopdekar RV, Dhall R, Turner J, Carlström JD, Ophus C, Klewe C, Shafer P, N'Diaye AT, Choi JW, Chen G, Wu YZ, Hwang C, Wang F, Qiu ZQ. Creation of skyrmions in van der Waals ferromagnet Fe 3GeTe 2 on (Co/Pd) n superlattice. SCIENCE ADVANCES 2020; 6:eabb5157. [PMID: 32917619 PMCID: PMC7473669 DOI: 10.1126/sciadv.abb5157] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2020] [Accepted: 07/15/2020] [Indexed: 05/27/2023]
Abstract
Magnetic skyrmions are topological spin textures, which usually exist in noncentrosymmetric materials where the crystal inversion symmetry breaking generates the so-called Dzyaloshinskii-Moriya interaction. This requirement unfortunately excludes many important magnetic material classes, including the recently found two-dimensional van der Waals (vdW) magnetic materials, which offer unprecedented opportunities for spintronic technology. Using photoemission electron microscopy and Lorentz transmission electron microscopy, we investigated and stabilized Néel-type magnetic skyrmion in vdW ferromagnetic Fe3GeTe2 on top of (Co/Pd) n in which the Fe3GeTe2 has a centrosymmetric crystal structure. We demonstrate that the magnetic coupling between the Fe3GeTe2 and the (Co/Pd) n could create skyrmions in Fe3GeTe2 without the need of an external magnetic field. Our results open exciting opportunities in spintronic research and the engineering of topologically protected nanoscale features by expanding the group of skyrmion host materials to include these previously unknown vdW magnets.
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Affiliation(s)
- M Yang
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Q Li
- Department of Physics, University of California, Berkeley, CA 94720, USA.
| | - R V Chopdekar
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - R Dhall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - J Turner
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - J D Carlström
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - C Ophus
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - C Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - P Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - A T N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - J W Choi
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - G Chen
- Department of Physics, University of California, Davis, CA 95616, USA
| | - Y Z Wu
- Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - C Hwang
- Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340, Republic of Korea
| | - F Wang
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Z Q Qiu
- Department of Physics, University of California, Berkeley, CA 94720, USA.
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76
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Pei K, Liu S, Zhang E, Zhao X, Yang L, Ai L, Li Z, Xiu F, Che R. Anomalous Spin Behavior in Fe 3GeTe 2 Driven by Current Pulses. ACS NANO 2020; 14:9512-9520. [PMID: 32538609 DOI: 10.1021/acsnano.0c03269] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, 2D ferromagnetic materials have aroused wide interest for their magnetic properties and potential applications in spintronic and topological devices. However, their actual applications have been severely hindered by intricate challenges such as the unclear spin arrangement. In particular, the evolution of spin texture driven by high-density electron current, which is an essential condition for fabricating devices, remains unclear. Herein, the current-pulse-driven spin textures in 2D ferromagnetic material Fe3GeTe2 have been thoroughly investigated by in situ Lorentz transmission electron microscopy. The dynamic experiments reveal that the stripe domain structure in the AB and AC planes can be broken and rearranged by the high-density current. In particular, the density of domain walls can be modulated, which offers an avenue to achieve a high-density domain structure. This phenomenon is attributed to the weak interlayer exchange interaction in 2D metallic ferromagnetic materials and the strong disturbance from the high-density current. Therefore, a bubble domain structure and random magnetization in Fe3GeTe2 can be acquired by synchronous current pulses and magnetic fields. These achievements reveal domain structure transitions driven by the current in 2D metallic magnetic materials and provide references for the practical applications.
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Affiliation(s)
- Ke Pei
- Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials(iChEM), Fudan University, Shanghai 200433, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Xuebing Zhao
- Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials(iChEM), Fudan University, Shanghai 200433, China
| | - Liting Yang
- Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials(iChEM), Fudan University, Shanghai 200433, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Renchao Che
- Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials(iChEM), Fudan University, Shanghai 200433, China
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77
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Wang H, Liu Y, Wu P, Hou W, Jiang Y, Li X, Pandey C, Chen D, Yang Q, Wang H, Wei D, Lei N, Kang W, Wen L, Nie T, Zhao W, Wang KL. Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe 3GeTe 2 Tailored by a Topological Insulator. ACS NANO 2020; 14:10045-10053. [PMID: 32686930 DOI: 10.1021/acsnano.0c03152] [Citation(s) in RCA: 57] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The emerging two-dimensional ferromagnetic materials present atomic layer thickness and a perfect interface feature, which have become an attractive research direction in the field of spintronics for low power and deep nanoscale integration. However, it has been proven to be extremely challenging to achieve a room-temperature ferromagnetic candidate with well controlled dimensionality, large-scale production, and convenient heterogeneous integration. Here, we report the growth of wafer-scale two-dimensional Fe3GeTe2 integrated with a topological insulator of Bi2Te3 by molecular beam epitaxy, which shows a Curie temperature (Tc) up to 400 K with perpendicular magnetic anisotropy. Dimensionality-dependent magnetic and magnetotransport measurements find that Tc increases with decreasing Fe3GeTe2 thickness in the heterostructures, indicating an interfacial engineering effect from Bi2Te3. The theoretical calculation further proves that the interfacial exchange coupling could significantly enhance the intralayer spin interaction in Fe3GeTe2, hence giving rise to a higher Tc. Our results provide great potential for the implementation of high-performance spintronic devices based on two-dimensional ferromagnetic materials.
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Affiliation(s)
- Haiyu Wang
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Yingjie Liu
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Peichen Wu
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Wenjie Hou
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Yuhao Jiang
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Xiaohui Li
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Chandan Pandey
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Dongdong Chen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Qing Yang
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Hangtian Wang
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Dahai Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Na Lei
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Wang Kang
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
| | - Lianggong Wen
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Tianxiao Nie
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Weisheng Zhao
- School of Microelectronics and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Kang L Wang
- Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States
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78
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Wu Y, Zhang S, Zhang J, Wang W, Zhu YL, Hu J, Yin G, Wong K, Fang C, Wan C, Han X, Shao Q, Taniguchi T, Watanabe K, Zang J, Mao Z, Zhang X, Wang KL. Néel-type skyrmion in WTe 2/Fe 3GeTe 2 van der Waals heterostructure. Nat Commun 2020; 11:3860. [PMID: 32737289 PMCID: PMC7395126 DOI: 10.1038/s41467-020-17566-x] [Citation(s) in RCA: 99] [Impact Index Per Article: 19.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2020] [Accepted: 07/05/2020] [Indexed: 11/09/2022] Open
Abstract
The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ m-2. This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.
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Affiliation(s)
- Yingying Wu
- Department of Electrical and Computer Engineering, University of California-Los Angeles, Los Angeles, CA, 90095, USA
| | - Senfu Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Junwei Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Wei Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Yang Lin Zhu
- Department of Physics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Jin Hu
- Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Gen Yin
- Department of Electrical and Computer Engineering, University of California-Los Angeles, Los Angeles, CA, 90095, USA
| | - Kin Wong
- Department of Electrical and Computer Engineering, University of California-Los Angeles, Los Angeles, CA, 90095, USA
| | - Chi Fang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Caihua Wan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiufeng Han
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qiming Shao
- Department of Electrical and Computer Engineering, University of California-Los Angeles, Los Angeles, CA, 90095, USA
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH, 03824, USA
| | - Zhiqiang Mao
- Department of Physics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California-Los Angeles, Los Angeles, CA, 90095, USA.
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79
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Purbawati A, Coraux J, Vogel J, Hadj-Azzem A, Wu N, Bendiab N, Jegouso D, Renard J, Marty L, Bouchiat V, Sulpice A, Aballe L, Foerster M, Genuzio F, Locatelli A, Menteş TO, Han ZV, Sun X, Núñez-Regueiro M, Rougemaille N. In-Plane Magnetic Domains and Néel-like Domain Walls in Thin Flakes of the Room Temperature CrTe 2 Van der Waals Ferromagnet. ACS APPLIED MATERIALS & INTERFACES 2020; 12:30702-30710. [PMID: 32515190 DOI: 10.1021/acsami.0c07017] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The recent discovery of magnetic van der Waals (vdW) materials triggered a wealth of investigations in materials science and now offers genuinely new prospects for both fundamental and applied research. Although the catalog of vdW ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective X-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domain walls in micron-sized flakes of the CrTe2 vdW ferromagnet. Flux-closure magnetic patterns suggesting an in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120°, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few millitesla only, showing that the CrTe2 compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.
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Affiliation(s)
- Anike Purbawati
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Johann Coraux
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Jan Vogel
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | | | - NianJheng Wu
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Nedjma Bendiab
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - David Jegouso
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Julien Renard
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Laetitia Marty
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Vincent Bouchiat
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - André Sulpice
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
| | - Lucia Aballe
- ALBA Synchrotron Light Facility, 08290 Cerdanyola Del Valles, Spain
| | - Michael Foerster
- ALBA Synchrotron Light Facility, 08290 Cerdanyola Del Valles, Spain
| | - Francesca Genuzio
- Elettra-Sincrotrone Trieste S.C.p.A., S:S. 14, km 163.5 in AREA Science Park, Basovizza, 34149 Trieste, Italy
| | - Andrea Locatelli
- Elettra-Sincrotrone Trieste S.C.p.A., S:S. 14, km 163.5 in AREA Science Park, Basovizza, 34149 Trieste, Italy
| | - Tevfik Onur Menteş
- Elettra-Sincrotrone Trieste S.C.p.A., S:S. 14, km 163.5 in AREA Science Park, Basovizza, 34149 Trieste, Italy
| | - Zheng Vitto Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui 230026, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P. R.China
| | - Xingdan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui 230026, China
| | | | - Nicolas Rougemaille
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut NEEL, 38000 Grenoble, France
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80
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Ke J, Yang M, Xia W, Zhu H, Liu C, Chen R, Dong C, Liu W, Shi M, Guo Y, Wang J. Magnetic and magneto-transport studies of two-dimensional ferromagnetic compound Fe 3GeTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:405805. [PMID: 32526709 DOI: 10.1088/1361-648x/ab9bc9] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Accepted: 06/11/2020] [Indexed: 06/11/2023]
Abstract
We have systematically reported the magnetic and magneto-transport properties of two-dimensional itinerant ferromagnetic compound Fe3GeTe2at high magnetic fields of 58 T and demonstrated the correlation between its transport and magnetism. Anomalous two-steps magnetic ordering and antiferromagnetic-like transitions in zero field-cooling (ZFC) curves forH∥ab-plane are observed. Additionally, we find that intrinsic negative magnetoresistances in bulk Fe3GeTe2single crystal are mainly attributed to the suppression of spin-fluctuations in low magnetic fields. Complex evolutions of temperature dependent high field magnetoresistances are detected under different magnetic field and current configurations, which can be explained as a result of the competition between spin-fluctuations, the magnon-scatterings and classical cyclotronic effects.
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Affiliation(s)
- Jiezun Ke
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Ming Yang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Shanghai 201800, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haipeng Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Congbin Liu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Rui Chen
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Chao Dong
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Wanxin Liu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Mengyi Shi
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Junfeng Wang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
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81
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Jang SW, Yoon H, Jeong MY, Ryee S, Kim HS, Han MJ. Origin of ferromagnetism and the effect of doping on Fe 3GeTe 2. NANOSCALE 2020; 12:13501-13506. [PMID: 32555905 DOI: 10.1039/c9nr10171c] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent experimental findings of two dimensional ferromagnetism in Fe3GeTe2, whose critical temperature can reach room temperature by gating, has attracted great research interest. Here we performed elaborate ab initio studies using density functional theory, dynamical mean-field theory and magnetic force response theory. In contrast to the conventional wisdom, it is unambiguously shown that Fe3GeTe2 is not ferromagnetic but is antiferromagnetic, carrying zero net moment in its stoichiometric phase. Fe defect and hole doping are the keys to make this material ferromagnetic as supported by previously disregarded experiments. Furthermore, we found that electron doping also induces the antiferro- to ferro-magnetic transition. It is crucial to understand the notable recent experiments on gate-controlled ferromagnetism. Our results not only reveal the origin of ferromagnetism of this material but also show how it can be manipulated with defects and doping.
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Affiliation(s)
- Seung Woo Jang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
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82
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Hu X, Zhao Y, Shen X, Krasheninnikov AV, Chen Z, Sun L. Enhanced Ferromagnetism and Tunable Magnetism in Fe 3GeTe 2 Monolayer by Strain Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26367-26373. [PMID: 32408732 DOI: 10.1021/acsami.0c05530] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent discovery of intrinsic ferromagnetism in Fe3GeTe2 (FGT) monolayer [Deng, Y.; Nature 2018, 563, 94-99; Fei, Z.; Nat. Mater. 2018, 17, 778-782] not only extended the family of two-dimensional (2D) magnetic materials but also stimulated further interest in the possibility to tune their magnetic properties without changing the chemical composition or introducing defects. By means of density functional theory computations, we explore strain effects on the magnetic properties of the FGT monolayer. We demonstrate that the ferromagnetism can be largely enhanced by the tensile strain in the FGT monolayer due to the competitive effects of direct exchange and superexchange interaction. The average magnetic moments of Fe atoms increase monotonically with an increase in biaxial strain from -5 to 5% in FGT monolayer. The intriguing variation of magnetic moments with strain in the FGT monolayer is related to the charge transfer induced by the changes in the bond lengths. Given the successful fabrication of the FGT monolayer, the strain-tunable ferromagnetism in the FGT monolayer can stimulate the experimental effort in this field. This work also suggests an effective route to control the magnetic properties of the FGT monolayer. The pronounced magnetic response toward the biaxial strain can be used to design the magnetomechanical coupling spintronics devices based on FGT.
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Affiliation(s)
- Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Yinghe Zhao
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan 00931, Puerto Rico
| | - Xiaodong Shen
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, PO Box 11100, 00076 Aalto, Finland
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan 00931, Puerto Rico
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China
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83
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Zhang X, Zhou Y, Mee Song K, Park TE, Xia J, Ezawa M, Liu X, Zhao W, Zhao G, Woo S. Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:143001. [PMID: 31689688 DOI: 10.1088/1361-648x/ab5488] [Citation(s) in RCA: 70] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The field of magnetic skyrmions has been actively investigated across a wide range of topics during the last decades. In this topical review, we mainly review and discuss key results and findings in skyrmion research since the first experimental observation of magnetic skyrmions in 2009. We particularly focus on the theoretical, computational and experimental findings and advances that are directly relevant to the spintronic applications based on magnetic skyrmions, i.e. their writing, deleting, reading and processing driven by magnetic field, electric current and thermal energy. We then review several potential applications including information storage, logic computing gates and non-conventional devices such as neuromorphic computing devices. Finally, we discuss possible future research directions on magnetic skyrmions, which also cover rich topics on other topological textures such as antiskyrmions and bimerons in antiferromagnets and frustrated magnets.
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Affiliation(s)
- Xichao Zhang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, People's Republic of China
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84
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Ding B, Li Z, Xu G, Li H, Hou Z, Liu E, Xi X, Xu F, Yao Y, Wang W. Observation of Magnetic Skyrmion Bubbles in a van der Waals Ferromagnet Fe 3GeTe 2. NANO LETTERS 2020; 20:868-873. [PMID: 31869236 DOI: 10.1021/acs.nanolett.9b03453] [Citation(s) in RCA: 89] [Impact Index Per Article: 17.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) magnetic materials have recently been introduced as a new horizon in materials science, and they enable potential applications for next-generation spintronic devices. Here, in this communication, the observations of stable Bloch-type magnetic skyrmions in single crystals of 2D vdW Fe3GeTe2 (FGT) are reported by using in situ Lorentz transmission electron microscopy (TEM). We find the ground-state magnetic stripe domains in FGT transform into skyrmion bubbles when an external magnetic field is applied perpendicularly to the (001) thin plate with temperatures below the Curie temperature TC. Most interestingly, a hexagonal lattice of skyrmion bubbles is obtained via field-cooling manipulation with magnetic field applied along the [001] direction. Owing to their topological stability, the skyrmion bubble lattices are stable to large field-cooling tilted angles and further reproduced by utilizing the micromagnetic simulations. These observations directly demonstrate that the 2D vdW FGT possesses a rich variety of topological spin textures, being of great promise for future applications in the field of spintronics.
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Affiliation(s)
- Bei Ding
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Zefang Li
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Guizhou Xu
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Hang Li
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Zhipeng Hou
- South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Enke Liu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
| | - Xuekui Xi
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
| | - Feng Xu
- School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Yuan Yao
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
| | - Wenhong Wang
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
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85
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Huang P, Zhang P, Xu S, Wang H, Zhang X, Zhang H. Recent advances in two-dimensional ferromagnetism: materials synthesis, physical properties and device applications. NANOSCALE 2020; 12:2309-2327. [PMID: 31930261 DOI: 10.1039/c9nr08890c] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) ferromagnetism is critical for both scientific investigation and technological development owing to its low-dimensionality that brings in quantization of electronic states as well as free axes for device modulation. However, the scarcity of high-temperature 2D ferromagnets has been the obstacle of many research studies, such as the quantum anomalous Hall effect (QAHE) and thin-film spintronics. Indeed, in the case of the isotropic Heisenberg model with finite-range exchange interactions as an example, low-dimensionality is shown to be contraindicated with ferromagnetism. However, the advantages of low-dimensionality for micro-scale patterning could enhance the Curie temperature (TC) of 2D ferromagnets beyond the TC of bulk materials, opening the door for designing high-temperature ferromagnets in the 2D limit. In this paper, we review the recent advances in the field of 2D ferromagnets, including their material systems, physical properties, and potential device applications.
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Affiliation(s)
- Pu Huang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Peng Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Shaogang Xu
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Huide Wang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Han Zhang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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86
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Ningrum VP, Liu B, Wang W, Yin Y, Cao Y, Zha C, Xie H, Jiang X, Sun Y, Qin S, Chen X, Qin T, Zhu C, Wang L, Huang W. Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications. RESEARCH (WASHINGTON, D.C.) 2020; 2020:1768918. [PMID: 32637940 PMCID: PMC7321532 DOI: 10.34133/2020/1768918] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Accepted: 04/28/2020] [Indexed: 12/14/2022]
Abstract
The emergence of low-dimensional nanomaterials has brought revolutionized development of magnetism, as the size effect can significantly influence the spin arrangement. Since the first demonstration of truly two-dimensional magnetic materials (2DMMs) in 2017, a wide variety of magnetic phases and associated properties have been exhibited in these 2DMMs, which offer a new opportunity to manipulate the spin-based devices efficiently in the future. Herein, we focus on the recent progress of 2DMMs and heterostructures in the aspects of their structural characteristics, physical properties, and spintronic applications. Firstly, the microscopy characterization of the spatial arrangement of spins in 2D lattices is reviewed. Afterwards, the optical probes in the light-matter-spin interactions at the 2D scale are discussed. Then, particularly, we systematically summarize the recent work on the electronic and spintronic devices of 2DMMs. In the section of electronic properties, we raise several exciting phenomena in 2DMMs, i.e., long-distance magnon transport, field-effect transistors, varying magnetoresistance behavior, and (quantum) anomalous Hall effect. In the section of spintronic applications, we highlight spintronic devices based on 2DMMs, e.g., spin valves, spin-orbit torque, spin field-effect transistors, spin tunneling field-effect transistors, and spin-filter magnetic tunnel junctions. At last, we also provide our perspectives on the current challenges and future expectations in this field, which may be a helpful guide for theorists and experimentalists who are exploring the optical, electronic, and spintronic properties of 2DMMs.
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Affiliation(s)
- Vertikasari P. Ningrum
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Bowen Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yao Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yi Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chenyang Zha
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Hongguang Xie
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xiaohong Jiang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Yan Sun
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Sichen Qin
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chao Zhu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
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87
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Pasco CM, El Baggari I, Bianco E, Kourkoutis LF, McQueen TM. Tunable Magnetic Transition to a Singlet Ground State in a 2D van der Waals Layered Trimerized Kagomé Magnet. ACS NANO 2019; 13:9457-9463. [PMID: 31310516 DOI: 10.1021/acsnano.9b04392] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Incorporating magnetism into two-dimensional (2D) van der Waals (vdW) heterostructures is crucial for the development of functional electronic and magnetic devices. Here, we show that Nb3X8 (X = Cl, Br) is a family of 2D layered trimerized kagomé magnets that are paramagnetic at high temperatures and undergo a first-order phase transition on cooling to a singlet magnetic state. X-ray diffraction shows that a rearrangement of the vdW stacking accompanies the magnetic transition, with high- and low-temperature phases consistent with scanning transmission electron microscopy images of the end members α-Nb3Cl8 and β-Nb3Br8. The temperature of this transition is systematically varied across the solid solution Nb3Cl8-xBrx (x = 0-8), with x = 6 having transitions near room temperature. The solid solution also varies the optical properties, which are further modulated by the phase transition. As such, they provide a platform on which to understand and exploit the interplay between dimensionality, magnetism, and optoelectronic behavior in vdW materials.
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88
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Li X, Lü JT, Zhang J, You L, Su Y, Tsymbal EY. Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with Fe 3GeTe 2 Electrodes. NANO LETTERS 2019; 19:5133-5139. [PMID: 31276417 DOI: 10.1021/acs.nanolett.9b01506] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel. Such a giant tunneling magnetoresistance (TMR) effect is driven by dissimilar electronic structure of the two spin-conducting channels in Fe3GeTe2, resulting in a mismatch between the incoming and outgoing Bloch states in the electrodes and thus suppressed transmission for an antiparallel-aligned MTJ. The vdW bonding between electrodes and a spacer layer makes this result virtually independent of the type of the spacer layer, making the predicted giant TMR effect robust with respect to strain, interface distance, and other parameters, which may vary in the experiment. We hope that our results will further stimulate experimental studies of vdW MTJs and pave the way for their applications in spintronics.
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Affiliation(s)
- Xinlu Li
- School of Physics and Wuhan National High Magnetic Field Center , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jing-Tao Lü
- School of Physics and Wuhan National High Magnetic Field Center , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jia Zhang
- School of Physics and Wuhan National High Magnetic Field Center , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Long You
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Yurong Su
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience , University of Nebraska , Lincoln , Nebraska 68588 , United States
- Moscow Institute of Physics and Technology , Dolgoprudny , Moscow Region 141700 , Russia
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89
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Albarakati S, Tan C, Chen ZJ, Partridge JG, Zheng G, Farrar L, Mayes ELH, Field MR, Lee C, Wang Y, Xiong Y, Tian M, Xiang F, Hamilton AR, Tretiakov OA, Culcer D, Zhao YJ, Wang L. Antisymmetric magnetoresistance in van der Waals Fe 3GeTe 2/graphite/Fe 3GeTe 2 trilayer heterostructures. SCIENCE ADVANCES 2019; 5:eaaw0409. [PMID: 31281884 PMCID: PMC6611684 DOI: 10.1126/sciadv.aaw0409] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2018] [Accepted: 05/29/2019] [Indexed: 05/24/2023]
Abstract
With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe3GeTe2 (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.
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Affiliation(s)
| | - Cheng Tan
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Zhong-Jia Chen
- Department of Physics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | | | - Guolin Zheng
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Lawrence Farrar
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | | | - Matthew R. Field
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Changgu Lee
- Center for Quantum Materials and Superconductivity (CQMS) and Department of Physics, Sungkyunkwan University, Suwon, Republic of Korea
| | - Yihao Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Yiming Xiong
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Feixiang Xiang
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, NSW 2052, Australia
| | - Alex R. Hamilton
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, NSW 2052, Australia
| | - Oleg A. Tretiakov
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, NSW 2052, Australia
- National University of Science and Technology “MISiS,” Moscow 119049, Russia
| | - Dimitrie Culcer
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, NSW 2052, Australia
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Lan Wang
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
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90
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Gong C, Zhang X. Two-dimensional magnetic crystals and emergent heterostructure devices. Science 2019; 363:363/6428/eaav4450. [DOI: 10.1126/science.aav4450] [Citation(s) in RCA: 683] [Impact Index Per Article: 113.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Magnetism, originating from the moving charges and spin of elementary particles, has revolutionized important technologies such as data storage and biomedical imaging, and continues to bring forth new phenomena in emergent materials and reduced dimensions. The recently discovered two-dimensional (2D) magnetic van der Waals crystals provide ideal platforms for understanding 2D magnetism, the control of which has been fueling opportunities for atomically thin, flexible magneto-optic and magnetoelectric devices (such as magnetoresistive memories and spin field-effect transistors). The seamless integration of 2D magnets with dissimilar electronic and photonic materials opens up exciting possibilities for unprecedented properties and functionalities. We review the progress in this area and identify the possible directions for device applications, which may lead to advances in spintronics, sensors, and computing.
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91
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Liu J, Wang A, Pu K, Zhang S, Yang J, Musho T, Chen L. The effect of Fe vacancies and Cu adhesion on the magnetic properties of Fe3GeTe2. Phys Chem Chem Phys 2019; 21:7588-7593. [PMID: 30900706 DOI: 10.1039/c9cp00151d] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The magnetic moment of FeI ions decreases significantly due to the presence of the FeII vacancies.
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Affiliation(s)
- Jia Liu
- Quzhou University
- Quzhou 324000
- P. R. China
| | | | - Kaisong Pu
- Quzhou University
- Quzhou 324000
- P. R. China
| | | | - Jianhui Yang
- Quzhou University
- Quzhou 324000
- P. R. China
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
| | - Terence Musho
- Department of Mechanical and Aerospace Engineering
- West Virginia University
- USA
| | - Liang Chen
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Zhejiang
- P. R. China
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92
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Stahl J, Shlaen E, Johrendt D. The van der Waals Ferromagnets Fe5-δGeTe2and Fe5-δ-xNixGeTe2- Crystal Structure, Stacking Faults, and Magnetic Properties. Z Anorg Allg Chem 2018. [DOI: 10.1002/zaac.201800456] [Citation(s) in RCA: 46] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Juliane Stahl
- Department Chemie; Ludwig-Maximilians-Universität München; Butenandtstr. 5-13 (D) 81377 München Germany
| | - Evgeniya Shlaen
- Department Chemie; Ludwig-Maximilians-Universität München; Butenandtstr. 5-13 (D) 81377 München Germany
| | - Dirk Johrendt
- Department Chemie; Ludwig-Maximilians-Universität München; Butenandtstr. 5-13 (D) 81377 München Germany
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