Magnetic Moments Induced by Atomic Vacancies in Transition Metal Dichalcogenide Flakes

2D magnetism plays a key role in both fundamental physics and potential device applications. However, the instability of the discovered 2D magnetic materials has been one main obstacle in deep research and potential application of 2D magnetism. Here, a localized magnetic moment induced by Pt vacancies in air-stable type-II Dirac semimetal PtSe₂ flakes is reported. The localized magnetic moments give rise to the Kondo effect, evidenced by logarithmic increment of resistance with decreasing temperature and isotropic negative longitudinal magnetoresistance. Additionally, the induced magnetic moment and Kondo temperature appear to depend on thickness in the thinner samples (<10 nm). The small magnetocrystalline anisotropy revealed by first-principles calculation indicates that the magnetic moments are randomly localized instead of long-range ordered. The findings demonstrate a new means to induce magnetism in 2D non-magnetic materials.

Light-Tunable Ferromagnetism in Atomically Thin Fe_{3}GeTe_{2} Driven by Femtosecond Laser Pulse

The recent discovery of intrinsic ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has opened up a new arena for spintronics, raising an opportunity of achieving tunable intrinsic 2D vdW magnetism. Here, we show that the magnetization and the magnetic anisotropy energy (MAE) of few-layered Fe_{3}GeTe_{2} (FGT) is strongly modulated by a femtosecond laser pulse. Upon increasing the femtosecond laser excitation intensity, the saturation magnetization increases in an approximately linear way and the coercivity determined by the MAE decreases monotonically, showing unambiguously the effect of the laser pulse on magnetic ordering. This effect observed at room temperature reveals the emergence of light-driven room-temperature (300 K) ferromagnetism in 2D vdW FGT, as its intrinsic Curie temperature T_{C} is ∼200  K. The light-tunable ferromagnetism is attributed to the changes in the electronic structure due to the optical doping effect. Our findings pave a novel way to optically tune 2D vdW magnetism and enhance the T_{C} up to room temperature, promoting spintronic applications at or above room temperature.

Hydrogen-Doping-Induced Metal-Like Ultrahigh Free-Carrier Concentration in Metal-Oxide Material for Giant and Tunable Plasmon Resonance

The practical utilization of plasmon-based technology relies on the ability to find high-performance plasmonic materials other than noble metals. A key scientific challenge is to significantly increase the intrinsically low concentration of free carriers in metal-oxide materials. Here, a novel electron-proton co-doping strategy is developed to achieve uniform hydrogen doping in metal-oxide MoO₃ at mild conditions, which creates a metal-like ultrahigh free-carrier concentration approaching that of noble metals (10²¹ cm^-3 in H_1.68 MoO₃ versus 10²² cm^-3 in Au/Ag). This bestows giant and tunable plasmonic resonances in the visible region to this originally semiconductive material. Using ultrafast spectroscopy characterizations and first-principle simulations, the formation of a quasi-metallic energy band structure that leads to long-lived and strong plasmonic field is revealed. As verified by the surface-enhanced Raman spectra (SERS) of rhodamine 6G molecules on H_x MoO₃ , the SERS enhancement factor reaches as high as 1.1 × 10⁷ with a detection limit at concentration as low as 1 × 10^-9  mol L^-1 , representing the best among the hitherto reported non-metal systems. The findings not only provide a set of metal-like semiconductor materials with merits of low cost, tunable electronic structure, and plasmonic resonance, but also a general strategy to induce tunable ultrahigh free-carrier concentration in non-metal systems.

Designer spin order in diradical nanographenes

The magnetic properties of carbon materials are at present the focus of intense research effort in physics, chemistry and materials science due to their potential applications in spintronics and quantum computing. Although the presence of spins in open-shell nanographenes has recently been confirmed, the ability to control magnetic coupling sign has remained elusive but highly desirable. Here, we demonstrate an effective approach of engineering magnetic ground states in atomically precise open-shell bipartite/nonbipartite nanographenes using combined scanning probe techniques and mean-field Hubbard model calculations. The magnetic coupling sign between two spins was controlled via breaking bipartite lattice symmetry of nanographenes. In addition, the exchange-interaction strength between two spins has been widely tuned by finely tailoring their spin density overlap, realizing a large exchange-interaction strength of 42 meV. Our demonstrated method provides ample opportunities for designer above-room-temperature magnetic phases and functionalities in graphene nanomaterials.

Induced spin polarization in graphene via interactions with halogen doped MoS2 and MoSe2 monolayers by DFT calculations

Magnetic halogen doped MoX2 (X = S and Se) monolayers influenced the electronic structure of graphene through a proximity effect. This process was observed using state-of-the-art calculations. It was found that the substitution of a single chalcogen atom with a halogen atom (F, Cl, Br, and I) results in n-type doping of MoX2. An additional electron from the dopant is localized on binding orbitals with the nearest Mo atoms and leads to the formation of magnetism in the dichalcogenide layer. Detailed analysis of halogen doped MoX2/graphene heterostructures demonstrated the induction of spin polarization in graphene near the Fermi energy. Significant spin polarization near the Fermi energy and n-type doping were observed in the graphene layer of MoSe2/graphene heterostructures with MoSe2 doped with iodine. At the same time, fluorine-doped MoSe2 does not cause n-doping in graphene, while spin polarization still takes place. The possibility for the detection of the arrangement of the halogen impurities at the MoX2 basal plane even with the graphene layer deposited on top was demonstrated through STM measurements which will be undoubtedly useful for the fabrication of electronic schemes and elements based on the proposed heterostructures for their further application in nanoelectronics and spintronics.

Band gap and magnetic engineering of penta-graphene via adsorption of small transition clusters

Penta-graphene has been intensively studied owing to its superior properties such as being an intrinsic semiconductor and having two dimensional stability. However, the nonmagnetic character makes it difficult for straightforward application in the fields of spintronic or information storage. Here, the deposition effects of Fe-group and Co-group transition metal (TM = Fe, Ru, Os; Co, Rh, Ir) clusters on the penta-graphene have been systemically investigated for their electronic and magnetic properties by using density functional theory (DFT) calculations. We found that the TM deposition stability on penta-graphene is overall greater than that on graphene. Importantly, TM adatoms (adclusters) not only change penta-graphene from being a wide band-gap semiconductor to a narrow band-gap semiconductor, but also introduce large magnetic moments into systems simultaneously. It is worth noting that the Ir5 cluster on penta-graphene is a good candidate for realizing the magnetic half-metallic materials. Our calculated results demonstrate that adatoms can exhibit large out-of-plane magnetic anisotropy energy, e.g., the Os adatom presents the largest value of 113 meV. Therefore, from the application point of view, magnetic functionalization of penta-graphene by TM clusters facilitates its application as a spintronic device or a high-density information storage device.

Spin Polarization-Induced Facile Dioxygen Activation in Boron-Doped Graphitic Carbon Nitride

Dioxygen (O₂) activation is a vital step in many oxidation reactions, and a graphitic carbon nitride (g-C₃N₄) sheet is known as a famous semiconductor catalytic material. Here, we report that the atomic boron (B)-doped g-C₃N₄ (B/g-C₃N₄) can be used as a highly efficient catalyst for O₂ activation. Our first-principles results show that O₂ can be easily chemisorbed at the B site and thus can be highly activated, featured by an elongated O-O bond (∼1.52 Å). Interestingly, the O-O cleavage is almost barrier free at room temperatures, independent of the doping concentration. It is revealed that the B atom can induce considerable spin polarization on B/g-C₃N₄, which accounts for O₂ activation. The doping concentration determines the coupling configuration of net-spin and thus the magnitude of the magnetism. However, the distribution of net-spin at the active site is independent of the doping concentration, giving rise to the doping concentration-independent catalytic capacity. The unique monolayer geometry and the existing multiple active sites may facilitate the adsorption and activation of O₂ from two sides, and the newly generated surface oxygen-containing groups can catalyze the oxidation coupling of methane to ethane. The present findings pave a new way to design g-C₃N₄-based metal-free catalysts for oxidation reactions.

Computational Design of Two-Dimensional Boron-Containing Compounds as Efficient Metal-free Electrocatalysts toward Nitrogen Reduction Independent of Heteroatom Doping

As metal-free carbon based catalysts, boron (B)-doped carbonaceous materials have proved to exhibit superior catalytic performance toward nitrogen reduction reaction. However, this strategy of heteroatom doping encounters the synthesis challenges of precise control of the doping level and homogeneous distribution of the dopants, and in particular, these materials cannot be utilized in electrochemical N₂ reduction because of poor electrical conductivity. Accordingly, via first-principles calculations, we here predicted two stable two-dimensional crystalline compounds: BC₆N₂ and BC₄N, which have small band gaps and uniform distribution of NRR active sp²-B species and holey structures. Between them, the BC₆N₂ monolayer originally possesses nice NRR activity with limiting potentials of -0.47 V. In the proton-rich acid medium, the electronic properties of these two B-C-N monolayers could be further tailored to exhibit a metallic characteristic by H pre-adsorption. This drastically improves the conductivity and enhances their NRR performances as reflected by the limiting potentials of -0.15, -0.34, and -0.34 V for BC₆N₂ via enzymatic, distal, and alternating mechanisms, respectively. Besides, NRR on BC₄N through enzymatic mechanism proceeds as the limiting potential moderated from -1.20 to -0.90 V. More than that, the competing hydrogen evolution reaction can be effectively suppressed. The current investigation opens an avenue of designing a 2D crystalline phase of MFC catalysts independent of heteroatom doping and gives insightful views of surface functionalization as an impactful strategy to improve the electrocatalytic activity of metal-free catalysts.

Scale-Enhanced Magnetism in Exfoliated Atomically Thin Magnetite Sheets

The discovery of ferromagnetism in atomically thin layers at room temperature widens the prospects of 2D materials for device applications. Recently, two independent experiments demonstrated magnetic ordering in two dissimilar 2D systems, CrI₃ and Cr₂ Ge₂ Te₆ , at low temperatures and in VSe₂ at room temperature, but observation of intrinsic room-temperature magnetism in 2D materials is still a challenge. Here a transition at room temperature that increases the magnetization in magnetite while thinning down the bulk material to a few atom-thick sheets is reported. DC magnetization measurements prove ferrimagnetic ordering with increased magnetization and density functional theory calculations ascribe their origin to the low dimensionality of the magnetite layers. In addition, surface energy calculations for different cleavage planes in passivated magnetite crystal agree with the experimental observations of obtaining 2D sheets from non-van der Waals crystals.

Defect identification and statistics toolbox: automated defect analysis for scanning probe microscopy images

Identifying and classifying defects in scanning probe microscopy (SPM) images is an important task that is tedious to perform by hand. In this paper we present the defect identification and statistics toolbox (DIST), an image processing toolbox for identifying and analyzing atomic defects in SPM images. DIST combines automation with user input to accurately and efficiently identify defects and automatically compute critical statistics. We describe using DIST for interactive image processing, generating contour plots for isolating extrema from an image background, and processes for identifying defects.

Magnetism of Topological Boundary States Induced by Boron Substitution in Graphene Nanoribbons

Graphene nanoribbons (GNRs), low-dimensional platforms for carbon-based electronics, show the promising perspective to also incorporate spin polarization in their conjugated electron system. However, magnetism in GNRs is generally associated with localized states around zigzag edges, difficult to fabricate and with high reactivity. Here we demonstrate that magnetism can also be induced away from physical GNR zigzag edges through atomically precise engineering topological defects in its interior. A pair of substitutional boron atoms inserted in the carbon backbone breaks the conjugation of their topological bands and builds two spin-polarized boundary states around them. The spin state was detected in electrical transport measurements through boron-substituted GNRs suspended between the tip and the sample of a scanning tunneling microscope. First-principle simulations find that boron pairs induce a spin 1, which is modified by tuning the spacing between pairs. Our results demonstrate a route to embed spin chains in GNRs, turning them into basic elements of spintronic devices.

A Symmetry-Breaking Phase in Two-Dimensional FeTe2 with Ferromagnetism above Room Temperature

Recently, ferromagnetism observed in monolayer two-dimensional (2D) materials has attracted attention due to the promise of its application in next-generation spintronics. Here, we predict a symmetry-breaking phase in 2D FeTe₂ that differs from conventional transition metal ditellurides shows superior stability and room-temperature ferromagnetism. Through density functional theory calculations, we find the exchange interactions in FeTe₂ consist of short-range superexchange and long-range oscillatory exchanges mediated by itinerant electrons. For six nearest neighbors, the exchange constants are calculated to be 50.95, 33.41, 2.70, 11.02, 14.46, and -4.12 meV. Furthermore, the strong relativistic effects on Te²⁺ induce giant out-of-plane exchange anisotropy and open up a significantly large spin wave gap (Δ^SW) of 1.22 meV. All of this leads to robust ferromagnetism with the T_c surpassing 423 K, which is predicted by the renormalization group Monte Carlo method, sufficiently higher than room temperature. Our findings shed light on the promising future of FeTe₂ in 2D magnetic research and spintronic applications.

Local Berry Phase Signatures of Bilayer Graphene in Intervalley Quantum Interference

Chiral quasiparticles in Bernal-stacked bilayer graphene have valley-contrasting Berry phases of ±2π. This nontrivial topological structure, associated with the pseudospin winding along a closed Fermi surface, is responsible for various novel electronic properties. Here we show that the quantum interference due to intervalley scattering induced by single-atom vacancies or impurities provides insights into the topological nature of the bilayer graphene. The scattered chiral quasiparticles between distinct valleys with opposite chirality undergo a rotation of pseudospin that results in the Friedel oscillation with wavefront dislocations. The number of dislocations reflects the information about pseudospin texture and hence can be used to measure the Berry phase. As demonstrated both experimentally and theoretically, the Friedel oscillation, depending on the single-atom vacancy or impurity at different sublattices, can exhibit N=4, 2, or 0 additional wavefronts, characterizing the 2π Berry phase of the bilayer graphene. Our results provide a comprehensive study of the intervalley quantum interference in bilayer graphene and can be extended to multilayer graphene, shedding light on the pseudospin physics.

Coupled Spin States in Armchair Graphene Nanoribbons with Asymmetric Zigzag Edge Extensions

Exact positioning of sublattice imbalanced nanostructures in graphene nanomaterials offers a route to control interactions between induced local magnetic moments and to obtain graphene nanomaterials with magnetically nontrivial ground states. Here, we show that such sublattice imbalanced nanostructures can be incorporated along a large band gap armchair graphene nanoribbon on the basis of asymmetric zigzag edge extensions, achieved by incorporating specifically designed precursor monomers. Scanning tunneling spectroscopy of an isolated and electronically decoupled zigzag edge extension reveals Hubbard-split states in accordance with theoretical predictions. Mean-field Hubbard-based modeling of pairs of such zigzag edge extensions reveals ferromagnetic, antiferromagnetic, or quenching of the magnetic interactions depending on the relative alignment of the asymmetric edge extensions. Moreover, a ferromagnetic spin chain is demonstrated for a periodic pattern of zigzag edge extensions along the nanoribbon axis. This work opens a route toward the fabrication of graphene nanoribbon-based spin chains with complex magnetic ground states.

Spin Relaxation in s-Wave Superconductors in the Presence of Resonant Spin-Flip Scatterers

Employing analytical methods and quantum transport simulations we investigate the relaxation of quasiparticle spins in graphene proximitized by an s-wave superconductor in the presence of resonant magnetic and spin-orbit active impurities. Off resonance, the relaxation increases with decreasing temperature when electrons scatter off magnetic impurities-the Hebel-Slichter effect-and decreases when impurities have spin-orbit coupling. This distinct temperature dependence (not present in the normal state) uniquely discriminates between the two scattering mechanisms. However, we show that the Hebel-Slichter picture breaks down at resonances. The emergence of Yu-Shiba-Rusinov bound states within the superconducting gap redistributes the spectral weight away from magnetic resonances. The result is opposite to the Hebel-Slichter expectation: the spin relaxation decreases with decreasing temperature. Our findings hold for generic s-wave superconductors with resonant magnetic impurities, but also, as we show, for resonant magnetic Josephson junctions.

Regulation of Electronic Structure of Graphene Nanoribbon by Tuning Long-Range Dopant-Dopant Coupling at Distance of Tens of Nanometers

Long-range dopant-dopant coupling in graphene nanoribbon (GNR) has been under intensive study for a very long time. Using a newly developed dopant central insertion scheme (DCIS), we performed first-principles study on multiple H, O, OH, and FeN₄ dopants in long (up to 1000 nm) GNRs and found that, although potential energy of the dopant decays exponentially as a function of distance to the dopant, GNR's electronic density of states (DOS) exhibits wave-like oscillation modulated by dopants separated at a distance up to 100 nm. Such an oscillation strongly infers the purely quantum mechanical resonance states constrained between double quantum wells. This has been unambiguously confirmed by our DCIS study together with a one-dimensional quantum well model study, leading to a proof-of-principle protocol prescribing on-demand GNR-DOS regulation. All these not only reveal the underlining mechanism and importance of long-range dopant-dopant coupling specifically reported in GNR, but also open a novel highway for rationally optimizing and designing two-dimensional materials.

Tailoring Electronic and Magnetic Properties of Graphene by Phosphorus Doping

The electronic and magnetic properties of graphene can be modulated by doping it with other elements, especially those with a different number of valence electrons. In this article, we first provide a three-dimensional reconstruction of the atomic structure of a phosphorus substitution in graphene using aberration-corrected scanning transmission electron microscopy. Turning then to theoretical calculations based on the density functional theory (DFT), we show that doping phosphorus in various bonding configurations can induce magnetism in graphene. Our simulations reveal that the electronic and magnetic properties of P-doped (Gr-P) and/or phosphono-functionalized graphene (Gr-PO₃H₂) can be controlled by both the phosphorus concentration and configurations, ultimately leading to ferromagnetic (FM) and/or antiferromagnetic (AFM) features with the transition temperature up to room temperature. We also calculate core-level binding energies of variously bonded P to facilitate X-ray photoelectron spectroscopy-based identification of its chemical form present in P-doped graphene-based structures. These results may enable the design of graphene-based organic magnets with tailored properties for future magnetic or spintronic applications.

Giant spin signals in chemically functionalized multiwall carbon nanotubes

Transporting quantum information such as the spin information over micrometric or even millimetric distances is a strong requirement for the next-generation electronic circuits such as low-voltage spin-logic devices. This crucial step of transportation remains delicate in nontopologically protected systems because of the volatile nature of spin states. Here, a beneficial combination of different phenomena is used to approach this sought-after milestone for the beyond-Complementary Metal Oxide Semiconductor (CMOS) technology roadmap. First, a strongly spin-polarized charge current is injected using highly spin-polarized hybridized states emerging at the complex ferromagnetic metal/molecule interfaces. Second, the spin information is brought toward the conducting inner shells of a multiwall carbon nanotube used as a confined nanoguide benefiting from both weak spin-orbit and hyperfine interactions. The spin information is finally electrically converted because of a strong magnetoresistive effect. The experimental results are also supported by calculations qualitatively revealing exceptional spin transport properties of this system.

Quantum Confinement of Dirac Quasiparticles in Graphene Patterned with Sub-Nanometer Precision

Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels. However, creating confining structures with nanometer precision in shape, size, and location remains an experimental challenge, both for top-down and bottom-up approaches. Moreover, Klein tunneling, offering an escape route to graphene electrons, limits the efficiency of electrostatic confinement. Here, a scanning tunneling microscope (STM) is used to create graphene nanopatterns, with sub-nanometer precision, by the collective manipulation of a large number of H atoms. Individual graphene nanostructures are built at selected locations, with predetermined orientations and shapes, and with dimensions going all the way from 2 nm up to 1 µm. The method permits the patterns to be erased and rebuilt at will, and it can be implemented on different graphene substrates. STM experiments demonstrate that such graphene nanostructures confine very efficiently graphene Dirac quasiparticles, both in 0D and 1D structures. In graphene quantum dots, perfectly defined energy bandgaps up to 0.8 eV are found that scale as the inverse of the dot's linear dimension, as expected for massless Dirac fermions.

Effects of biaxial strain on the impurity-induced magnetism in P-doped graphene and N-doped silicene: a first principles study

The effects of biaxial strain on the impurity-induced magnetism in P-doped graphene (P-graphene) and N-doped silicene (N-silicene) are studied by means of spin-polarized density functional calculations, using the supercell approach. The calculations were performed for three different supercell sizes 4 × 4, 5 × 5, and 6 × 6, in order to simulate three different dopant concentrations 3.1, 2.0 and 1.4%, respectively. For both systems, the calculated magnetic moment is 1.0 μ _B per impurity atom for the three studied concentrations. From the analysis of the electronic structure and the total energy as a function of the magnetization, we show that a Stoner-type model describing the electronic instability of the narrow impurity band accounts for the origin of sp-magnetism in P-graphene and N-silicene. Under biaxial strain the impurity band dispersion increases and the magnetic moment gradually decreases, with the consequent collapse of the magnetization at moderate strain values. Thus, we found that biaxial strain induces a magnetic quantum phase transition in P-graphene and N-silicene.

Novel mechanism for weak magnetization with high Curie temperature observed in H-adsorption on graphene

To elucidate the physics associated with the magnetism observed in nominally nonmagnetic materials containing only sp-electrons, we have developed an extreme model to simulate the adsorption of H (in a straight-line form) on graphene. Our first principles calculations for the model result in a ferromagnetic ground state at a high temperature with a magnetic moment of one Bohr magneton per H atom. The removal of p  _z -orbitals from sublattice B of graphene introduces p  _z -vacancies. The p  _z -vacancy-induced states are created not because of the variations in interatomic interactions but because of the p  _z -orbital imbalance between two sublattices (A and B) of the conjugated p  _z -orbital network. Therefore, some critical requirements should be satisfied to create these states (denoted as [Formula: see text]) to avoid further imbalances and to minimally affect the conjugated p  _z -orbital network. The requirements for the creation of [Formula: see text] can be given as follows: (1) [Formula: see text] consists of p  _z -orbitals of only the atoms in sublattice A, (2) the spatial wavefunction of [Formula: see text] is antisymmetric, and (3) in principle, [Formula: see text] extends over the entire crystal without decaying, unless other p  _z -vacancies are encountered. Both the origin of spin polarization and the magnetic ordering of the model can be attributed to the aforementioned requirements.

Multiferroic hydrogenated graphene bilayer

We investigated the multiferroic properties of a hydrogenated graphene bilayer using first-principles calculations. The proposed material is composed of one fully hydrogenated and one semi-hydrogenated graphene monolayer. Inside the van der Waals gap, hydrogen atoms are only adsorbed on either the top or the bottom layer of graphene, thus breaking the centrosymmetry. The calculated electric polarization is 0.137 × 10-10 C m-1, with the transition barrier of switching the polarization being 393 meV per formula unit. We showed that ferroelectricity can be preserved down to atomic thickness. We also studied the domain wall energy and its migration for various domain wall densities, and our results indicate a robust polarization configuration against room temperature thermal fluctuation. As graphene is known to be able to sustain large strain, we further explored ferroelectricity tuning via strain, and found that the polarization can be effectively tuned up to 20% without perturbing the polarization switching barrier. Our results suggest a realizable multiferroic two-dimensional material using the most used two-dimensional material, graphene.

Engineering of Magnetic Coupling in Nanographene

Nanographenes with sublattice imbalance host a net spin according to Lieb's theorem for bipartite lattices. Here, we report the on-surface synthesis of atomically precise nanographenes and their atomic-scale characterization on a gold substrate by using low-temperature noncontact atomic force microscopy and scanning tunneling spectroscopy. Our results clearly confirm individual nanographenes host a single spin of S=1/2 via the Kondo effect. In covalently linked nanographene dimers, two spins are antiferromagnetically coupled with each other as revealed by inelastic spin-flip excitation spectroscopy. The magnetic exchange interaction in dimers can be well engineered by tuning the local spin density distribution near the connection region, consistent with mean-field Hubbard model calculations. Our work clearly reveals the emergence of magnetism in nanographenes and provides an efficient way to further explore the carbon-based magnetism.

Switchable metal-to-half-metal transition at the semi-hydrogenated graphene/ferroelectric interface

Tuning the half-metallicity of low-dimensional materials using an electric field is particularly appealing for spintronic applications but typically requires an ultra-high field, hampering practical applications. Interface engineering has been suggested as an alternative practical means to overcome this limitation and control the metal-to-half-metal transition. Here, we show from first-principles calculations that the polarization switching at the interface of semi-hydrogenated graphene (i.e., graphone) and a ferroelectric PbTiO3 layer can reversibly tune a metal to half-metal transition in graphone. Using a simple Hubbard model, this is rationalized using interface atomic orbital hybridization, which also reveals the origin of the high-quality screening of metallic graphone, preserving bulk-like stable ferroelectric polarization in the PbTiO3 film down to a thickness of two unit cells. These findings do not only open a new perspective on engineering half-metallicity at the interface of two-dimensional materials and ferroelectrics, but also identify graphone as a powerful atomically thin electrode, which holds great promise for the design of ultrafast and high integration density information-storage devices.

2D Hybrid Superlattice-Based On-Chip Electrocatalytic Microdevice for in Situ Revealing Enhanced Catalytic Activity

A molecule-confined two-dimensional (2D) hybrid superlattice is emerging for uncovering the chemical properties as well as distinctive physical phenomenon arising from the interface electronic states. An efficient and convenient synthetic method represents an important precondition to implementing the superlattice in terminal applications and functional devices. Herein, we develop an approach of spontaneous molecular intercalation to obtain a TaS₂-N₂H₄ hybrid superlattice through simple solution immersion processing at room temperature. A cross-sectional high-angle annular dark field image verifies that the N₂H₄ molecules intercalate into the TaS₂ lattice, and the interlayer spacing expands approximately 1.5 times. Combining electrical transport testing and theoretical calculations, electron transfer from N₂H₄ to the S-Ta-S lattice induces enhanced superconductivity and the suppression of the order of charge density waves. Moreover, electrical and Kelvin probe force microscope measurements reveal that intercalary N₂H₄ molecules ensure that the superlattice has higher conductivity and a lower surface work function at room temperature. A 2D hybrid superlattice-based on-chip electrocatalytic microdevice was fabricated through in situ molecular intercalation to directly evaluate the catalytic performance. Benefiting from electronic state regulation, the hybrid superlattice is more active. The presented intercalation method would aid in exploring efficient catalysts and discovering fundamental 2D physics.

Tunable magnetism of a single-carbon vacancy in graphene

Creating a single-carbon vacancy introduces (quasi-)localized states for both σ and π electrons in graphene. Theoretically, interactions between the localized σ electrons and quasilocalized π electrons of a single-carbon vacancy in graphene are predicted to control its magnetism. However, experimentally confirming this prediction through manipulating the interactions remains an outstanding challenge. Here we report the manipulation of magnetism in the vicinity of an individual single-carbon vacancy in graphene by using a scanning tunnelling microscopy (STM) tip. Our spin-polarized STM measurements, complemented by density functional theory calculations, indicate that the interactions between the localized σ and quasilocalized π electrons could split the π electrons into two states with opposite spins even when they are well above the Fermi level. Via the STM tip, we successfully manipulate both the magnitude and direction of magnetic moment of the π electrons with respect to that of the σ electrons. Three different magnetic states of the single-carbon vacancy, exhibiting magnetic moments of about 1.6 μ_B, 0.5 μ_B, and 0 μ_B respectively, are realized in our experiment.

Recent advances in two-dimensional ferromagnetism: materials synthesis, physical properties and device applications

Two-dimensional (2D) ferromagnetism is critical for both scientific investigation and technological development owing to its low-dimensionality that brings in quantization of electronic states as well as free axes for device modulation. However, the scarcity of high-temperature 2D ferromagnets has been the obstacle of many research studies, such as the quantum anomalous Hall effect (QAHE) and thin-film spintronics. Indeed, in the case of the isotropic Heisenberg model with finite-range exchange interactions as an example, low-dimensionality is shown to be contraindicated with ferromagnetism. However, the advantages of low-dimensionality for micro-scale patterning could enhance the Curie temperature (T_C) of 2D ferromagnets beyond the T_C of bulk materials, opening the door for designing high-temperature ferromagnets in the 2D limit. In this paper, we review the recent advances in the field of 2D ferromagnets, including their material systems, physical properties, and potential device applications.

Graphene Acoustic Phonon-Mediated Pseudo-Landau Levels Tailoring Probed by Scanning Tunneling Spectroscopy

Graphene has attracted great interests in various areas including optoelectronics, spintronics, and nanomechanics due to its unique electronic structure, a linear dispersion with a zero bandgap around the Dirac point. Shifts of Dirac cones in graphene creates pseudo-magnetic field, which generates an energy gap and brings a zero-magnetic-field analogue of the quantum Hall effect. Recent studies have demonstrated that graphene pseudo-magnetic effects can be generated by vacancy defects, atom adsorption, zigzag or armchair edges, and external strain. Here, a larger than 100 T pseudo-magnetic field is reported that generated on the step area of graphene; and with the ultrahigh vacuum scanning tunneling microscopy, the observed Landau levels can be effectively tailored by graphene phonons. The zero pseudo-Landau level is suppressed due to the phonon-mediated inelastic tunneling, and this is observed by the scanning tunneling spectroscopy spectrum and confirmed by the Vienna ab initio simulation package calculation, where graphene phonons modulate the flow of tunneling electrons and further mediate pseudo-Landau levels. These observations demonstrate a viable approach for the control of pseudo-Landau levels, which tailors the electronic structure of graphene, and further ignites applications in graphene valley electronics.

Topological frustration induces unconventional magnetism in a nanographene

The chemical versatility of carbon imparts manifold properties to organic compounds, where magnetism remains one of the most desirable but elusive¹. Polycyclic aromatic hydrocarbons, also referred to as nanographenes, show a critical dependence of electronic structure on the topologies of the edges and the π-electron network, which makes them model systems with which to engineer unconventional properties including magnetism. In 1972, Erich Clar envisioned a bow-tie-shaped nanographene, C₃₈H₁₈ (refs. ^2,3), where topological frustration in the π-electron network renders it impossible to assign a classical Kekulé structure without leaving unpaired electrons, driving the system into a magnetically non-trivial ground state⁴. Here, we report the experimental realization and in-depth characterization of this emblematic nanographene, known as Clar's goblet. Scanning tunnelling microscopy and spin excitation spectroscopy of individual molecules on a gold surface reveal a robust antiferromagnetic order with an exchange-coupling strength of 23 meV, exceeding the Landauer limit of minimum energy dissipation at room temperature⁵. Through atomic manipulation, we realize switching of magnetic ground states in molecules with quenched spins. Our results provide direct evidence of carbon magnetism in a hitherto unrealized class of nanographenes⁶, and prove a long-predicted paradigm where topological frustration entails unconventional magnetism, with implications for room-temperature carbon-based spintronics^7,8.

Two-Dimensional AXenes: A New Family of Room-Temperature d0 Ferromagnets and Their Structural Phase Transitions

The recent discovery of two-dimensional (2D) magnetic order in monolayer CrI₃ and bilayer Fe₃GeTe₂ has stimulated intense experimental and theoretical activities to expand the family of 2D magnets. Most 2D magnets reported to date are transition metal compounds with unpaired d electrons. Novel 2D intrinsic magnets with long-range p state coupling are also highly desirable. Here, we propose that nonstoichiometry is a feasible and universal strategy to realize long-range p electron magnetic order in 2D metal-shrouded AXenes (Na₂N, K₂N, and Rb₂N), supported by our first-principles calculations. Taking K₂N as a representative, three series of cation-deficient K₂N (T, H, and I phases) have been predicted as stable ferromagnetic half-metal/metal with a Curie temperature of 480-1180 K. Their robust ferromagnetism is ascribed to the coexistence of carrier-mediated exchange and N-K-N superexchange interaction. Moreover, mechanical deformation can trigger reversible phase transformation by choosing their 3D layered counterpart as the intermediate phase.

Two-Dimensional Ferroics and Multiferroics: Platforms for New Physics and Applications

Two-dimensional (2D) ferroics, including ferromagnets, ferroelectrics, ferroelastics, and multiferroics, recently have been theoretically proposed or experimentally revealed. The research has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics, revealing ferroics in the 2D limit. In the present Perspective, we comprehensively review the recent research progress and also the proposed applications of 2D ferromagnetic, ferroelectric, and ferroelastic materials from theoretical and experimental viewpoints. We then introduce the coupling between ferroic orders and highlight the latest research on 2D multiferroic materials. The promising research directions and outlooks are discussed at the end of the Perspective. It is expected that the comprehensive overview of 2D ferroic materials can provide guidelines for researchers in the area and inspire further explorations of new physics and ferroic devices.

Molecular Magnets Based on Graphenes and Carbon Nanotubes

Molecular magnets are demonstrated to provide a promising way to realize nanometer-scale structures with a stable spin orientation. Herein, first a description of conventional molecular magnets coupled with sp² carbon materials, such as carbon nanotubes and graphenes, is given. Then, progress on ferromagnetism in sp² carbon nanomaterials due to the existence of defects or topological structures as the spin units, which makes the sp² materials themselves act as a novel class of molecular magnets, is reviewed, and a scheme of controllable synthesis of the molecular magnets at the sheared ends of carbon nanotubes is proposed. To conclude, remarks on some challenges and perspectives in the synthesis of carbon nanotube arrays with orderly sheared ends as integrated molecular magnets are provided.

P-Superdoped Graphene: Synthesis and Magnetic Properties

Phosphorus (P)-doping in vacancies of graphene sheets can significantly change graphene's physical and chemical properties. Generally, a high level for P-doping is difficult due to the low concentration of vacancy but is needed to synthesize graphene with the perfect properties. Herein, we synthesized the P-superdoped graphene with the very high P content of 6.40 at. % by thermal annealing of fluorographite (FGi) in P vapor. Moreover, we show that the P-doping level can be adjusted in the wide range from 2.86 to 6.40 at. % by changing the mass ratio of red phosphorus to FGi. The magnetic results show that (i) P-doping can effectively create localized magnetic moments in graphene; (ii) the higher the doping level of sp³-type PO_x groups, the higher the magnetization of P-superdoped graphene is; and (iii) the high P-doping levels can lead to the coexistence of antiferromagnetic and ferromagnetic behavior. It is proposed that the sp³-type PO_x groups are the major magnetic sources.

A DFT study for silicene quantum dots embedded in silicane: controllable magnetism and tuneable band gap by hydrogen

This paper presents a design for silicene quantum dots (SiQDs) embedded in silicane. The shape and size of an embedded SiQD are managed by hydrogen atoms. A first-principles method was used to evaluate the magnetism as well as the electronic and structural properties of embedded SiQDs of various shapes and sizes. The shape of the embedded SiQD determined its electronic structure as well as the dot size. Moreover, the magnetic properties of SiQDs in silicane were highly shape dependent. The triangular SiQDs were all magnetic, some small parallelogram SiQDs were nonmagnetic, and all others were antiferromagnetic; almost all hexagonal SiQDs were nonmagnetic. An unequal number of bare Si atoms at the A and B sites was identified as a critical factor for establishing magnetism in embedded SiQDs. The tip of a triangular SiQD enhanced the magnetic moment of the dot. The parallelogram SiQD with two tip atoms appeared as a magnetic needle and has potential for use in spintronic applications. SiQDs embedded in silicane can be used in the design of silicon-based nanoelectronic devices and binary logic based on nanoscale magnetism.

Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction

Interfacial quantum states are drawing tremendous attention recently because of their importance in design of low-dimensional quantum heterostructures with desired charge, spin, or topological properties. Although most studies of the interfacial exchange interactions were mainly performed across the interface vertically, the lateral transport nowadays is still a major experimental method to probe these interactions indirectly. In this Letter, we fabricated a graphene and hydrogen passivated silicon interface to study the interfacial exchange processes. For the first time we found and confirmed a novel interfacial quantum state, which is specific to the 2D-3D interface. The vertically propagating electrons from silicon to graphene result in electron oscillation states at the 2D-3D interface. A harmonic oscillator model is used to explain this interfacial state. In addition, the interaction between this interfacial state (discrete energy spectrum) and the lateral band structure of graphene (continuous energy spectrum) results in Fano-Feshbach resonance. Our results show that the conventional description of the interfacial interaction in low-dimensional systems is valid only in considering the lateral band structure and its density-of-states and is incomplete for the ease of vertical transport. Our experimental observation and theoretical explanation provide more insightful understanding of various interfacial effects in low-dimensional materials, such as proximity effect, quantum tunneling, etc. More important, the Fano-Feshbach resonance may be used to realize all solid-state and scalable quantum interferometers.

Measuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations

Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore crucial for technological applications. Although the spectral distribution in energy bands is routinely measured by various techniques¹, it is more difficult to access the topological properties of band structures such as the quantized Berry phase, γ, which is a gauge-invariant geometrical phase accumulated by the wavefunction along an adiabatic cycle². In graphene, the quantized Berry phase γ = π accumulated by massless relativistic electrons along cyclotron orbits is evidenced by the anomalous quantum Hall effect^4,5. It is usually thought that measuring the Berry phase requires the application of external electromagnetic fields to force the charged particles along closed trajectories³. Contradicting this belief, here we demonstrate that the Berry phase of graphene can be measured in the absence of any external magnetic field. We observe edge dislocations in oscillations of the charge density ρ (Friedel oscillations) that are formed at hydrogen atoms chemisorbed on graphene. Following Nye and Berry⁶ in describing these topological defects as phase singularities of complex fields, we show that the number of additional wavefronts in the dislocation is a real-space measure of the Berry phase of graphene. Because the electronic dispersion relation can also be determined from Friedel oscillations⁷, our study establishes the charge density as a powerful observable with which to determine both the dispersion relation and topological properties of wavefunctions. This could have profound consequences for the study of the band-structure topology of relativistic and gapped phases in solids.

On the Chemistry and Diffusion of Hydrogen in the Interstitial Space of Layered Crystals h-BN, MoS2 , and Graphite

Recent experiments have demonstrated transport and separation of hydrogen isotopes through the van der Waals gap in hexagonal boron nitride and molybdenum disulfide bulk layered materials. However, the experiments cannot distinguish if the transported particles are protons (H⁺ ) or protium (H) atoms. Here, reported are the theoretical studies, which indicate that protium atoms, rather than protons, are transported through the gap. First-principles calculations combined with well-tempered metadynamics simulations at finite temperature reveal that for h-BN and MoS₂ , the diffusion mechanism of both protons and protium (H) atoms involves a hopping process between adjacent layers. This process is assisted by low-energy phonon shear modes. The extracted diffusion coefficient of protium matches the experiment, while for protons it is several orders of magnitude smaller. This indicates that protium atoms are responsible for the experimental observations. These results allow for a comprehensive interpretation of experimental results on the transport of hydrogen isotopes through van der Waals gaps and can help identify other materials for hydrogen isotope separation applications.

Rational magnetic modification of N,N-dioxidized pyrazine ring expanded adenine and thymine: a diradical character induced by base pairing and double protonation

Rational modification of biomolecules especially DNA base pairs for the theoretical design of molecular magnets has attracted extensive interest. In this work, we report a modification strategy for adenine/thymine-based magnets through introducing a N,N-dioxidized pyrazine ring to either adenine or thymine to form ring-expanded bases (noA/noT) based on their experimentally synthesized derivatives. Further functionalization is conducted by double protonation and pairing with a normal complementary base (nohA-T/nohT-A), respectively. The diversity of protonation sites in noA generates totally six nohA-Ts, together with nohT-A forming seven two-step modified topic base pairs. DFT calculations are performed to characterize the magnetic properties and the diradical character, which indicate three diamagnetic (DM) nohA-Ts and three antiferromagnetic (AFM) nohA-Ts with extremely large magnetic coupling constants J ranging from -1279.7 to -2807.4 cm-1, while a relatively mild AFM nohT-A with a J of -194.6 cm-1. The electron separation effect induced by attraction of positive charges originating from protonation is proposed to explain the diradicalization, which is different from the traditional radical-coupler-radical coupling mode. In addition, atomic natural charges and spin densities, and H-bond and molecular orbital analyses are further discussed for verification and deep understanding of the observed unique phenomena. It should be noted that our designed seven topic base pairs have excellent characters including a good synthetic basis, a large scope of the |J| values, and the AFM-DM magnetic conversion or AFM strength modulation controlled by protonation/deprotonation, prototropic tautomerization, base pairing/dissociation, single proton transfer, and even the applied electric field. All these indicate the promising applications in the field of magnetic information storage or switch control. This work highlights the magnetic modification schemes and possible modulation methods of double positive charge doped DNA base pairs by utilizing their potential spin coupling modes.

Strain-induced N-N bonding and magnetic changes in monolayer intrinsic ferromagnetic TmN2 (Tm = Tc and Nb)

The modulation of magnetic property in two-dimensional (2D) intrinsic ferromagnets is important for their future application in spintronic devices at the nanoscale. In this work, using first-principles calculation, we investigate the effects of strain on the structures, electronic structures and magnetic properties of monolayer 1H-NbN₂ and 1H-TcN₂. The results show that both the unstrained monolayer 1H-NbN₂ and 1H-TcN₂ are 2D intrinsically ferromagnetic (FM) metal, in which the magnetic moment of the 1H-NbN₂ and 1H-TcN₂ comes mainly from the d orbitals of Nb atom and the p orbitals of N atom, respectively. Remarkably, two neighboring N atoms in the unstrained 1H-NbN₂ form N-N bond, while those in the 1H-TcN₂ do not. When lattice constant a increases to 3.17 Å, monolayer 1H-TcN₂ undergoes N-N nonbonding-bonding transition at which the distance between the N atoms d _N-N suddenly drops by almost 25%. In particular, due to the bonding between two neighboring N atoms, the magnetic moment of N atoms in 1H-TcN₂ are quenched and the ground state transfers to non-magnetic. In contrast, when a decreases to 3.18 Å, monolayer 1H-NbN₂ undergoes N  -  N bonding-nonbonding transition at which the d _N-N suddenly increases from 1.79 Å to 1.97 Å. The N-N bonding-nonbonding transition induces the magnetic moments to transfer from the d orbitals of Nb atom to the p orbitals of N atom, while ground state of monolayer 1H-NbN₂ remains FM metal.

Topological phase transition induced by px,y and pz band inversion in a honeycomb lattice

The search for more types of band inversion-induced topological states is of great scientific and experimental interest. Here, we proposed that the band inversion between p_x,y and p_z orbitals can produce a topological phase transition in honeycomb lattices based on tight-binding model analyses. The corresponding topological phase diagram was mapped out in the parameter space of orbital energy and spin-orbit coupling. Specifically, the quantum anomalous Hall (QAH) effect could be achieved when ferromagnetism was introduced. Moreover, our first-principles calculations demonstrated that the two systems of half-iodinated silicene (Si₂I) and one-third monolayer of bismuth epitaxially grown on the Si(111)-√3 ×√3 surface are ideal candidates for realizing the QAH effect with Curie temperatures of ∼101 K and 118 K, respectively. The underlying physical mechanism of this scheme is generally applicable, offering broader opportunities for the exploration of novel topological states and high-temperature QAH effect systems.

Prediction of colossal magnetocrystalline anisotropy for transition metal triiodides

In virtue of first principle calculations based on density functional theory, we have investigated the magnetism of transition metal triiodides XI₃ (X  =  Cr, Mn, Fe, Mo, Tc, Ru, W, Re, Os) monolayers. Our results indicate that CrI₃, TcI₃, RuI₃, ReI₃ and OsI₃ monolayers are ferromagnetic (FM), while MnI₃, FeI₃, MoI₃ and WI₃ monolayers are antiferromagnetic (AFM). Interestingly, TcI₃, RuI₃, ReI₃ and OsI₃ monolayers have considerable magnetic anisotropy energy (MAE). Especially, ReI₃ monolayer exhibits the largest MAE (-36.22 meV/ReI₃) in known two-dimensional (2D) van der Waals (vdW) crystals. We further demonstrate that biaxial strain can greatly change MAEs of ReI₃ and OsI₃ monolayers. From the electronic structure analysis, the change in MAE is mainly attributed from the charge transfer between the a and e ₂ states induced by biaxial strain. In addition, we have also found that a tensile strain can lead to a phase transition of ReI₃ from FM to AFM. We predicted that 2D FM XI₃ monolayers are promising candidates for the application in tunable magnetic storage technology.