1
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Yeo RJ, Bleich JN, Guérin M, Morganella D, Berner M, Frauenrath H. Multifunctional Aluminum Pre-treatments from End-Functionalized Phosphonic Acid Self-Assembled Monolayers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024. [PMID: 38306705 DOI: 10.1021/acs.langmuir.3c02629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2024]
Abstract
Aluminum alloys are used in advanced engineering applications as they possess a combination of favorable properties, including high strength, lightweightness, good corrosion resistance, machineability, and recyclability. Such applications often require forming the sheets into the final components, which is typically aided by an oil-based lubricant, followed by joining them using adhesives, which is hampered by residual lubricant. In this work, aluminum surfaces were modified with different self-assembled monolayers (SAMs), with the goal of significantly reducing the amount of lubricant while simultaneously improving friction properties, forming, and bonding performance. Our results show that SAMs terminated with hydrophilic and nucleophilic end groups give rise to high-energy surfaces with wetting properties that are stable over time. These surfaces showed significantly improved surface wetting by the lubricant, which in turn resulted in an improved forming performance at reduced lubricant coat weights. Moreover, the nucleophilic SAM termination provided outstanding performance in adhesive bonding tests under corrosive conditions.
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Affiliation(s)
- Reuben J Yeo
- Ecole Polytechnique Fédérale de Lausanne (EPFL) Institute of Materials, Lausanne 1015, Switzerland
| | - Julian N Bleich
- Ecole Polytechnique Fédérale de Lausanne (EPFL) Institute of Materials, Lausanne 1015, Switzerland
- Novelis SA Switzerland, Sierre 3900, Switzerland
| | | | | | | | - Holger Frauenrath
- Ecole Polytechnique Fédérale de Lausanne (EPFL) Institute of Materials, Lausanne 1015, Switzerland
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2
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Lee S, Kim HH, Seo J, Jang BC, Yoo H. Disordered Mixture of Self-Assembled Molecular Functional Groups on Heterointerfaces with p-Si Leads to Multiple Key Generation in Physical Unclonable Functions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1693-1703. [PMID: 36512688 DOI: 10.1021/acsami.2c18740] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Physical unclonable function (PUF) security devices based on hardware are becoming an effective strategy to overcome the dependency of the internet cloud and software-based hacking vulnerabilities. On the other hand, existing Si-based artificial security devices have several issues, including the absence of a method for multiple key generation, complex and expensive fabrication processes, and easy prediction compared to devices retaining natural randomness. Herein, to generate unique and unpredictable multiple security keys, this paper proposes novel PUF devices consisting of a disordered random mixture of two self-assembled monolayers (SAMs) formed onto p-type Si. The proposed PUF devices exhibited multikeys at different voltage biasing, including 0 V, through the arbitrary dipole effect. As a result, multiple unpredictable hardware security keys were generated from one device using a simple solution-coating process. The PUF security device based on the mixture of materials with different dipoles developed in this study can provide valuable insights for implementing various PUF devices in the future.
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Affiliation(s)
- Subin Lee
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam13120, Republic of Korea
| | - Hyun Ho Kim
- Department of Energy Engineering Convergence & School of Materials Science and Engineering, Kumoh National Institute of Technology, 61 Daehakro, Gumi39177, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam13120, Republic of Korea
| | - Byung Chul Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu41566, Republic of Korea
- School of Electronics Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu41566, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam13120, Republic of Korea
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3
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Haldar T, Wollandt T, Weis J, Zschieschang U, Klauk H, Weitz RT, Burghartz JN, Geiger M. High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays. SCIENCE ADVANCES 2023; 9:eadd3669. [PMID: 36608119 PMCID: PMC9821857 DOI: 10.1126/sciadv.add3669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Accepted: 12/08/2022] [Indexed: 06/17/2023]
Abstract
One of the circuit topologies for the implementation of unipolar integrated circuits (circuits that use either p-channel or n-channel transistors, but not both) is the zero-VGS architecture. Zero-VGS circuits often provide excellent static performance (large small-signal gain and large noise margins), but they suffer from the large signal delay imposed by the load transistor. To address this limitation, we have used electron-beam lithography to fabricate zero-VGS circuits based on organic transistors with channel lengths as small as 120 nm on flexible polymeric substrates. For a supply voltage of 3 V, these circuits have characteristic signal-delay time constants of 14 ns for the low-to-high transition and 560 ns for the high-to-low transition of the circuit's output voltage. These signal delays represent the best dynamic performance reported to date for organic transistor-based zero-VGS circuits. The signal-delay time constant of 14 ns is also the smallest signal delay reported to date for flexible organic transistors.
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Affiliation(s)
- Tanumita Haldar
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Tobias Wollandt
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Jürgen Weis
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Ute Zschieschang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
| | - R Thomas Weitz
- First Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
| | - Joachim N Burghartz
- Institute for Microelectronics (IMS CHIPS), Allmandring 30a, Stuttgart 70569, Germany
| | - Michael Geiger
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany
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4
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Taguchi K, Uemura T, Petritz A, Namba N, Akiyama M, Sugiyama M, Araki T, Stadlober B, Sekitani T. Fine-Tuning the Performance of Ultraflexible Organic Complementary Circuits on a Single Substrate via a Nanoscale Interfacial Photochemical Reaction. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:6308-6321. [PMID: 36588622 PMCID: PMC9798987 DOI: 10.1021/acsaelm.2c01444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Flexible electronics has paved the way toward the development of next-generation wearable and implantable healthcare devices, including multimodal sensors. Integrating flexible circuits with transducers on a single substrate is desirable for processing vital signals. However, the trade-off between low power consumption and high operating speed is a major bottleneck. Organic thin-film transistors (OTFTs) are suitable for developing flexible circuits owing to their intrinsic flexibility and compatibility with the printing process. We used a photoreactive insulating polymer poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) to modulate the power consumption and operating speed of ultraflexible organic circuits fabricated on a single substrate. The turn-on voltage (V on) of the p- and n-type OTFTs was controlled through a nanoscale interfacial photochemical reaction. The time-of-flight secondary ion mass spectrometry revealed the preferential occurrence of the PNDPE photochemical reaction in the vicinity of the semiconductor-dielectric interface. The power consumption and operating speed of the ultraflexible complementary inverters were tuned by a factor of 6 and 4, respectively. The minimum static power consumption was 30 ± 9 pW at transient and 4 ± 1 pW at standby. Furthermore, within the tuning range of the operating speed and at a supply voltage above 2.5 V, the minimum stage delay time was of the order of hundreds of microseconds. We demonstrated electromyogram measurements to emphasize the advantage of the nanoscale interfacial photochemical reaction. Our study suggests that a nanoscale interfacial photochemical reaction can be employed to develop imperceptible and wearable multimodal sensors with organic signal processing circuits that exhibit low power consumption.
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Affiliation(s)
- Koki Taguchi
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Graduate
School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
- Advanced
Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology
(AIST), 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Takafumi Uemura
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Advanced
Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology
(AIST), 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Andreas Petritz
- JOANNEUM
RESEARCH Forschungsgesellschaft mbH MATERIALS-Institute for Surface
Technologies and Photonics, Franz-Pichler-Straße 30, Weiz 8160, Austria
| | - Naoko Namba
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Advanced
Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology
(AIST), 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Mihoko Akiyama
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Graduate
School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Masahiro Sugiyama
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Graduate
School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
- Advanced
Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology
(AIST), 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Teppei Araki
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Graduate
School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
- Advanced
Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology
(AIST), 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Barbara Stadlober
- JOANNEUM
RESEARCH Forschungsgesellschaft mbH MATERIALS-Institute for Surface
Technologies and Photonics, Franz-Pichler-Straße 30, Weiz 8160, Austria
| | - Tsuyoshi Sekitani
- SANKEN
(The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
- Graduate
School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
- Advanced
Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology
(AIST), 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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5
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van Fraassen NCA, Niang KM, Parish JD, Johnson AL, Flewitt AJ. Optimisation of geometric aspect ratio of thin film transistors for low-cost flexible CMOS inverters and its practical implementation. Sci Rep 2022; 12:16111. [PMID: 36167707 PMCID: PMC9515102 DOI: 10.1038/s41598-022-19989-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 09/07/2022] [Indexed: 11/23/2022] Open
Abstract
A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they can be manufactured at low processing temperatures and low-cost per unit area, unlike traditional silicon devices. The development of complementary metal–oxide–semiconductor (CMOS) technology based on these materials remains challenging due to differences in performance between n- and p-type TFTs. Existing geometric rules typically compensate the lower mobility of the metal-oxide p-type TFT by scaling up the width-to-length (W/L) ratio but fail to take into account the significant off-state leakage current. Here we propose the concept of an optimal geometric aspect ratio which maximises the inverter efficiency represented by the average switching current divided by the static currents. This universal method is especially useful for the design of low-power CMOS inverters based on metal-oxides, where the large off-current of the p-type TFT dominates the static power consumption of the inverter. We model the inverter efficiency and noise margins of metal-oxide CMOS inverters with different geometric aspect ratios and compare the performance to different inverter configurations. The modelling results are verified experimentally by fabricating CMOS inverter configurations consisting of n-type indium-silicon-oxide (ISO) TFTs and p-type tin monoxide (SnO) TFTs. Notably, our results show that reducing W/L of metal-oxide p-type TFTs increases the inverter efficiency while reducing the area compared to simply scaling up W/L inversely with mobility. We anticipate this work provides a straightforward method to geometrically optimise flexible CMOS inverters, which will remain relevant even as the performance of TFTs continues to evolve.
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Affiliation(s)
- N C A van Fraassen
- Electrical Engineering Division, Engineering Department, Cambridge University, Cambridge, CB3 0FA, UK.
| | - K M Niang
- Electrical Engineering Division, Engineering Department, Cambridge University, Cambridge, CB3 0FA, UK
| | - J D Parish
- Department of Chemistry, University of Bath, Bath, BA2 7AX, UK
| | - A L Johnson
- Department of Chemistry, University of Bath, Bath, BA2 7AX, UK
| | - A J Flewitt
- Electrical Engineering Division, Engineering Department, Cambridge University, Cambridge, CB3 0FA, UK.
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6
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Jenkins AH, Medlin JW. Controlling Heterogeneous Catalysis with Organic Monolayers on Metal Oxides. Acc Chem Res 2021; 54:4080-4090. [PMID: 34644060 DOI: 10.1021/acs.accounts.1c00469] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
ConspectusA key theme of heterogeneous catalysis research is achieving control of the environment surrounding the active site to precisely steer the reactivity toward desired reaction products. One method toward this goal has been the use of organic ligands or self-assembled monolayers (SAMs) on metal nanoparticles. Metal-bound SAMs are typically employed to improve catalyst selectivity but often decrease the reaction rate as a result of site blocking from the ligands. Recently, the use of metal oxide-bound organic modifiers such as organophosphonic acid (PA) SAMs has shown promise as an additional method for tuning reactions on metal oxide surfaces as well as modifying oxide-supported metal catalysts. In this Account, we summarize recent approaches to enhance catalyst performance with oxide-bound monolayers. These approaches include (1) modification of metal oxide catalysts to tune surface reactions, (2) formation of SAMs on the oxide component of supported metal catalysts to modify sites at the metal-support interface, and (3) enhancement of catalyst performance (e.g., stability) through modification of sites remote from the active sites.Both the headgroups and organic tail groups of PA SAMs or other ligands can influence reactions on metal oxide surfaces. Binding of the headgroup can selectively poison certain active sites, altering the selectivity in a manner analogous to metal-bound ligands (at the expense of active site quantity). Moreover, tail groups can be functionalized to interact favorably with reactants and intermediates, for instance through dipole-dipole interactions. On supported metal catalysts like Pt/Al2O3, PA SAMs can selectively form on the oxide support. This selective deposition allows for modification of the metal-support interface with minimal blockage of metal sites. PA headgroups were shown to provide tunable acid sites at the interface, dramatically improving hydrodeoxygenation rates of various alcohols. Additionally, organic tail functionality was used to activate or stabilize specific reactants at the interface, such as with the use of amine-functionalized PAs to stabilize chemisorption of CO2 during the reverse water gas shift reaction. PAs have also been found to affect the electronic properties of bulk metal sites through long-range electron withdrawal via the oxide, providing an additional avenue to tune catalytic behavior. Finally, organic modifiers were shown to enhance catalytic performance without directly modifying the active site. For instance, in biphasic liquid environments the modification of catalyst particles with hydrophobic or hydrophilic SAMs shifts the selectivity of multipath reactions on the basis of the hydrophobicities of different intermediates and products. As another "long-range" effect, the deposition of ligands on oxide supports improved catalyst stability through both improved resistance to sintering and suppression of active site poisoning. The recent contributions discussed in this Account demonstrate the versatility and significant potential for the approach of modifying catalysts with oxide-bound organic monolayers.
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Affiliation(s)
- Alexander H. Jenkins
- Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80303, United States
| | - J. Will Medlin
- Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80303, United States
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7
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Taguchi K, Uemura T, Namba N, Petritz A, Araki T, Sugiyama M, Stadlober B, Sekitani T. Heterogeneous Functional Dielectric Patterns for Charge-Carrier Modulation in Ultraflexible Organic Integrated Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104446. [PMID: 34545628 DOI: 10.1002/adma.202104446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Revised: 08/11/2021] [Indexed: 06/13/2023]
Abstract
Flexible electronics have gained considerable attention for application in wearable devices. Organic transistors are potential candidates to develop flexible integrated circuits (ICs). A primary technique for maximizing their reliability, gain, and operation speed is the modulation of charge-carrier behavior in the respective transistors fabricated on the same substrate. In this work, heterogeneous functional dielectric patterns (HFDP) of ultrathin polymer gate dielectrics of poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) are introduced. The HFDP that are obtained via the photo-Fries rearrangement by ultraviolet radiation in the homogeneous PNDPE provide a functional area for charge-carrier modulation. This leads to programmable threshold voltage control over a wide range (-1.5 to +0.2 V) in the transistors with a high patterning resolution, at 2 V operational voltage. The transistors also exhibit high operational stability over 140 days and under the bias-stress duration of 1800 s. With the HFDP, the performance metrics of ICs, for example, the noise margin and gain of the zero-VGS load inverters and the oscillation frequency of ring oscillators are improved to 80%, 1200, and 2.5 kHz, respectively, which are the highest among the previously reported zero-VGS -based organic circuits. The HFDP can be applied to much complex and ultraflexible ICs.
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Affiliation(s)
- Koki Taguchi
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Takafumi Uemura
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Naoko Namba
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Andreas Petritz
- JOANNEUM RESEARCH Forschungsgesellschaft mbH, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler-Straße 30, Weiz, 8160, Austria
| | - Teppei Araki
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Masahiro Sugiyama
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Barbara Stadlober
- JOANNEUM RESEARCH Forschungsgesellschaft mbH, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler-Straße 30, Weiz, 8160, Austria
| | - Tsuyoshi Sekitani
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
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8
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Geiger M, Hagel M, Reindl T, Weis J, Weitz RT, Solodenko H, Schmitz G, Zschieschang U, Klauk H, Acharya R. Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors. Sci Rep 2021; 11:6382. [PMID: 33737629 PMCID: PMC7973517 DOI: 10.1038/s41598-021-85517-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Accepted: 02/28/2021] [Indexed: 11/08/2022] Open
Abstract
A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current-voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
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Affiliation(s)
- Michael Geiger
- Max Planck Institute for Solid State Research, Stuttgart, Germany.
| | - Marion Hagel
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Thomas Reindl
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Jürgen Weis
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - R Thomas Weitz
- The 1st Physical Institute, University of Göttingen, Göttingen, Germany
- Faculty of Physics, Ludwig-Maximilians-University, München, Germany
| | - Helena Solodenko
- Institute of Materials Science, University of Stuttgart, Stuttgart, Germany
| | - Guido Schmitz
- Institute of Materials Science, University of Stuttgart, Stuttgart, Germany
| | - Ute Zschieschang
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Rachana Acharya
- Max Planck Institute for Solid State Research, Stuttgart, Germany.
- Institute of Materials Science, University of Stuttgart, Stuttgart, Germany.
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9
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Lashkov I, Krechan K, Ortstein K, Talnack F, Wang SJ, Mannsfeld SCB, Kleemann H, Leo K. Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8664-8671. [PMID: 33569958 DOI: 10.1021/acsami.0c22224] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.
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Affiliation(s)
- Ilia Lashkov
- Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany
| | - Kevin Krechan
- Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany
| | - Katrin Ortstein
- Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany
| | - Felix Talnack
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universitat Dresden, Helmholtzstraße 18, Dresden, 01069, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universitat Dresden, Helmholtzstraße 18, Dresden, 01069, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany
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10
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Higashino T, Kuribara K, Toda N, Uemura S, Tachibana H, Azumi R. Direct Preparation of Mixed Self-assembled Monolayers Based on Common-substructure-tailored Phosphonic Acids for Fine Control of Surface Wettability. CHEM LETT 2020. [DOI: 10.1246/cl.200460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Toshiki Higashino
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Kazunori Kuribara
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Naoya Toda
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Sei Uemura
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Hiroaki Tachibana
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Reiko Azumi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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11
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Portilla L, Zhao J, Wang Y, Sun L, Li F, Robin M, Wei M, Cui Z, Occhipinti LG, Anthopoulos TD, Pecunia V. Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics. ACS NANO 2020; 14:14036-14046. [PMID: 32924510 DOI: 10.1021/acsnano.0c06619] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The development of ultralow-power and easy-to-fabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deep-subthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.
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Affiliation(s)
- Luis Portilla
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Yan Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Liping Sun
- iHuman institute, ShanghaiTech University, No. 393 Middle Huaxia Road, Shanghai 201210, China
| | - Fengzhu Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Malo Robin
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Miaomiao Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Luigi G Occhipinti
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955-6900, Saudi Arabia
| | - Vincenzo Pecunia
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
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12
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Minamiki T, Ichikawa Y, Kurita R. Systematic Investigation of Molecular Recognition Ability in FET-Based Chemical Sensors Functionalized with a Mixed Self-Assembled Monolayer System. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15903-15910. [PMID: 32134238 DOI: 10.1021/acsami.0c00293] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Exploring new strategies for simple and on-demand methods of manipulating the sensing ability of sensor devices functionalized with artificial receptors embedded in a molecular assembly is important to realizing high-throughput on-site sensing systems based on integrated and miniaturized devices such as field-effect transistors (FETs). Although FET-based chemical sensors can be used for rapid, quantitative, and simultaneous determination of various desired analytes, detectable targets in conventional FET sensors are currently restricted owing to the complicated processes used to prepare sensing materials. In this study, we investigated the relationship between the sensing features of FETs and the nanostructures of mixed self-assembled monolayers (mSAMs) for the detection of biomolecules. The FET devices were systematically functionalized using mixtures of benzenethiol derivatives (4-mercaptobenzoic acid and benzenethiol), which changed the nanostructure of the SAMs formed on gold sensing electrodes. The obtained cross-reactivity in the FETs modified with the mSAMs was derived from the multidimensional variations of the SAM characteristics. Our successful demonstration of continuous control of the molecular recognition ability in the FETs by applying the mSAM system could lead to the development of next-generation versatile analyzers, including chemical sensor arrays for the determination of multiple analytes anytime, anywhere.
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Affiliation(s)
- Tsukuru Minamiki
- Biomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan
- DAILAB, DBT-AIST International Center for Translational and Environmental Research (DAICENTER), National Institute of Advanced Industrial Science and Technology (AIST), Central 5-41, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Yuki Ichikawa
- Biomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Ryoji Kurita
- Biomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan
- DAILAB, DBT-AIST International Center for Translational and Environmental Research (DAICENTER), National Institute of Advanced Industrial Science and Technology (AIST), Central 5-41, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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13
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Kondo M, Uemura T, Ishiwari F, Kajitani T, Shoji Y, Morita M, Namba N, Inoue Y, Noda Y, Araki T, Fukushima T, Sekitani T. Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers. ACS APPLIED MATERIALS & INTERFACES 2019; 11:41561-41569. [PMID: 31594305 DOI: 10.1021/acsami.9b13056] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, ultralow 1/f noise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/f noise level among those of previously reported OTFTs. It is well known that 1/f noise causes degradation of signal integrity in analog and digital circuits. However, conventional OTFTs still possess high 1/f noise levels, and the factors that strongly affect 1/f noise are still ambiguous. In this work, the effect of gate dielectric surface on 1/f noise was investigated. First, by comparing OTFTs composed of various channel lengths, we revealed that contact resistance did not affect 1/f noise. Second, we compared parylene OTFTs with and without a self-assembled Trip modifier layer in terms of 1/f noise and trap density of states (Trap DOS). The experiments revealed that a specific Trip modifier layer suppresses the shallow Trap DOS in the OTFTs, leading to a low 1/f noise. Moreover, the 1/f noise level and Trap DOS of various kinds of OTFTs were comprehensively compared, which highlighted that the 1/f noise of OTFTs strongly depends on the gate dielectric surface. Finally, detailed analysis of the gate dielectric interface led us to conclude that the disorder of gate dielectrics and the crystalline quality of semiconductor films are related to shallow Trap DOS, which correlates with 1/f noise.
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Affiliation(s)
- Masaya Kondo
- The Institute of Scientific and Industrial Research , Osaka University , 8-1, Mihogaoka , Ibaraki , Osaka 567-0047 , Japan
- Graduate School of Engineering , Osaka University , 2-1, Yamada-oka , Suita , Osaka 565-0871 , Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory , National Institute of Advanced Industrial Science and Technology , Photonics Center P3 Bldg. 2-1 , Yamadaoka, Suita , Osaka 565-0871 , Japan
| | - Takafumi Uemura
- The Institute of Scientific and Industrial Research , Osaka University , 8-1, Mihogaoka , Ibaraki , Osaka 567-0047 , Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory , National Institute of Advanced Industrial Science and Technology , Photonics Center P3 Bldg. 2-1 , Yamadaoka, Suita , Osaka 565-0871 , Japan
| | - Fumitaka Ishiwari
- Laboratory for Chemistry and Life Science, Institute of Innovative Research , Tokyo Institute of Technology , 4259 Nagatsuta , Midori-ku, Yokohama 226-8503 , Japan
| | - Takashi Kajitani
- Laboratory for Chemistry and Life Science, Institute of Innovative Research , Tokyo Institute of Technology , 4259 Nagatsuta , Midori-ku, Yokohama 226-8503 , Japan
| | - Yoshiaki Shoji
- Laboratory for Chemistry and Life Science, Institute of Innovative Research , Tokyo Institute of Technology , 4259 Nagatsuta , Midori-ku, Yokohama 226-8503 , Japan
| | - Masato Morita
- Laboratory for Chemistry and Life Science, Institute of Innovative Research , Tokyo Institute of Technology , 4259 Nagatsuta , Midori-ku, Yokohama 226-8503 , Japan
| | - Naoko Namba
- Advanced Photonics and Biosensing Open Innovation Laboratory , National Institute of Advanced Industrial Science and Technology , Photonics Center P3 Bldg. 2-1 , Yamadaoka, Suita , Osaka 565-0871 , Japan
| | - Yumi Inoue
- The Institute of Scientific and Industrial Research , Osaka University , 8-1, Mihogaoka , Ibaraki , Osaka 567-0047 , Japan
| | - Yuki Noda
- The Institute of Scientific and Industrial Research , Osaka University , 8-1, Mihogaoka , Ibaraki , Osaka 567-0047 , Japan
| | - Teppei Araki
- The Institute of Scientific and Industrial Research , Osaka University , 8-1, Mihogaoka , Ibaraki , Osaka 567-0047 , Japan
- Graduate School of Engineering , Osaka University , 2-1, Yamada-oka , Suita , Osaka 565-0871 , Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory , National Institute of Advanced Industrial Science and Technology , Photonics Center P3 Bldg. 2-1 , Yamadaoka, Suita , Osaka 565-0871 , Japan
| | - Takanori Fukushima
- Laboratory for Chemistry and Life Science, Institute of Innovative Research , Tokyo Institute of Technology , 4259 Nagatsuta , Midori-ku, Yokohama 226-8503 , Japan
| | - Tsuyoshi Sekitani
- The Institute of Scientific and Industrial Research , Osaka University , 8-1, Mihogaoka , Ibaraki , Osaka 567-0047 , Japan
- Graduate School of Engineering , Osaka University , 2-1, Yamada-oka , Suita , Osaka 565-0871 , Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory , National Institute of Advanced Industrial Science and Technology , Photonics Center P3 Bldg. 2-1 , Yamadaoka, Suita , Osaka 565-0871 , Japan
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14
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Acharya R, Peng B, Chan PKL, Schmitz G, Klauk H. Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2019; 11:27104-27111. [PMID: 31267732 PMCID: PMC6750643 DOI: 10.1021/acsami.9b04361] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 106 has been achieved, in combination with charge-carrier mobilities up to 0.4 cm2/V s on flexible plastic substrates and 1 cm2/V s on silicon substrates.
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Affiliation(s)
- Rachana Acharya
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
- Institute
of Materials Science, University of Stuttgart, Stuttgart 70569, Germany
- E-mail: (R.A.)
| | - Boyu Peng
- Department
of Mechanical Engineering, University of
Hong Kong, Hong Kong, Hong Kong
| | - Paddy K. L. Chan
- Department
of Mechanical Engineering, University of
Hong Kong, Hong Kong, Hong Kong
| | - Guido Schmitz
- Institute
of Materials Science, University of Stuttgart, Stuttgart 70569, Germany
| | - Hagen Klauk
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
- E-mail: (H.K.)
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15
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Yuan X, Wolf N, Mayer D, Offenha Usser A, Wo Rdenweber R. Vapor-Phase Deposition and Electronic Characterization of 3-Aminopropyltriethoxysilane Self-Assembled Monolayers on Silicon Dioxide. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2019; 35:8183-8190. [PMID: 31144819 DOI: 10.1021/acs.langmuir.8b03832] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Although organosilanes, especially 3-aminopropyltriethoxysilane (APTES), are commonly used to functionalize oxide substrates for a variety of applications ranging from molecular/biosensors and electronics to protective layers, reliable and controlled deposition of these molecules remains a major obstacle. In this study, we use surface potential analyses to record and optimize the gas-phase deposition of APTES self-assembled monolayers (SAMs) and to determine the resulting change of the electrokinetic potential and charge at the solid?liquid interface when the system is exposed to an electrolyte. Using a gas-phase molecular layer deposition setup with an in situ molecule deposition sensor, APTES is deposited at room temperature onto ozone-activated SiO2. The resulting layers are characterized using various techniques ranging from contact angle analysis, ellipsometry, fluorescence microscopy, X-ray photoelectron spectroscopy, and electrokinetic analysis to AFM. It turns out that adequate postdeposition treatment is crucial to the formation of perfect molecular SAMs. We demonstrate how a thick layer of APTES molecules is initially adsorbed at the surface; however, the molecules do not bind to SiO2 and are removed if the film is exposed to an electrolyte. Only if the film is kept in a gaseous environment (preferable at low pressure) for a long enough time do APTES molecules start to bind to the surface and form the SAM layer. During this time, superfluous molecules are removed. The resulting modification of the electrokinetic potential at the surface is analyzed in detail for different states.
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Affiliation(s)
- Xiaobo Yuan
- Institute of Complex Systems?Bioelectronics (ICS-8) , Forschungszentrum Ju?lich , Ju?lich 52428 , Germany
| | - Nikolaus Wolf
- Institute of Complex Systems?Bioelectronics (ICS-8) , Forschungszentrum Ju?lich , Ju?lich 52428 , Germany
| | - Dirk Mayer
- Institute of Complex Systems?Bioelectronics (ICS-8) , Forschungszentrum Ju?lich , Ju?lich 52428 , Germany
| | - Andreas Offenha Usser
- Institute of Complex Systems?Bioelectronics (ICS-8) , Forschungszentrum Ju?lich , Ju?lich 52428 , Germany
| | - Roger Wo Rdenweber
- Institute of Complex Systems?Bioelectronics (ICS-8) , Forschungszentrum Ju?lich , Ju?lich 52428 , Germany
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16
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Highly-ordered Triptycene Modifier Layer Based on Blade Coating for Ultraflexible Organic Transistors. Sci Rep 2019; 9:9200. [PMID: 31235730 PMCID: PMC6591239 DOI: 10.1038/s41598-019-45559-4] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 06/07/2019] [Indexed: 11/08/2022] Open
Abstract
We present a highly ordered surface modification layer for polymers based on ambient solution-processed triptycene (Trip) derivatives for high-mobility organic thin-film transistors (OTFTs). The nested packing of Trip molecules results in the formation of 2D hexagonal arrays, which stack one-dimensionally on the surface of polymer dielectrics without anchoring groups. The Trip surface was previously shown to be preferable for the growth of organic semiconductors (OSCs), and hence for enhancing the mobility of OTFTs. However, although the Trip modifier layer has been realized by thermal evaporation in a high-vacuum environment (TVE), it still has grain-boundary disorders that hinder the optimal growth of OSCs. To fabricate OTFTs with higher mobility, a disorder-free Trip layer is needed. We developed highly ordered Trip layers on polymer dielectrics via blade coating. In addition, we clarified that the highly ordered Trip modifier layer enhances the mobility of the OTFTs by more than 40%, relative to the disordered Trip layer prepared by TVE. Finally, we realized a ring oscillator composed of OTFTs with a highly ordered Trip layer.
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17
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Roh J, Ryu JH, Baek GW, Jung H, Seo SG, An K, Jeong BG, Lee DC, Hong BH, Bae WK, Lee JH, Lee C, Jin SH. Threshold Voltage Control of Multilayered MoS 2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1803852. [PMID: 30637933 DOI: 10.1002/smll.201803852] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Revised: 11/23/2018] [Indexed: 06/09/2023]
Abstract
In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 VDD . More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m-2 at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application.
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Affiliation(s)
- Jeongkyun Roh
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Jae Hyeon Ryu
- Department of Electronic Engineering, Incheon National University, Academy-ro, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Heeyoung Jung
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Seung Gi Seo
- Department of Electronic Engineering, Incheon National University, Academy-ro, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Kunsik An
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Byeong Guk Jeong
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Byung Hee Hong
- Department of Chemistry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Seobu-ro, Jangan-gu, Suwon-si, 16419, Gyeonggi-do, Republic of Korea
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Changhee Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Department of Electronic Engineering, Incheon National University, Academy-ro, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Sung Hun Jin
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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18
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Zessin J, Xu Z, Shin N, Hambsch M, Mannsfeld SCB. Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane. ACS APPLIED MATERIALS & INTERFACES 2019; 11:2177-2188. [PMID: 30596425 DOI: 10.1021/acsami.8b12346] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Doping is a powerful tool to control the majority charge carrier density in organic field-effect transistors and the threshold voltage of these devices. Here, a surface doping approach is shown, where the dopant is deposited on the prefabricated polycrystalline semiconducting layer. In this study, (tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane (FTCS), a fluorinated alkylsilane is used as a dopant, which is solution processable and much cheaper than conventional p-type dopants, such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). In this work, the depositions from the gas phase and from solution are compared. Both deposition approaches led to an increased conductivity and to a shift in the threshold voltage to more positive values, both of which indicate a p-type doping effect. The magnitude of the threshold voltage shift could be controlled by the FTCS deposition time (from vapor) or FTCS concentration (from solution); for short deposition times and low concentrations, the off current stayed constant and the mobility decreased only slightly. In the low doping concentration regime, both approaches resulted in similar transistor characteristics, i.e., similar values of shift in the threshold and turn-on voltage as well as mobility, ION/ IOFF ratio and amount of introduced free charge carriers. In comparison with vapor deposition, the solution-based approach can be conducted with less material and in a shorter time, which is critical for industrial applications.
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Affiliation(s)
- Jakob Zessin
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Zheng Xu
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Nara Shin
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering , Technische Universität Dresden , 01062 Dresden , Germany
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19
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Wang B, Huang W, Chi L, Al-Hashimi M, Marks TJ, Facchetti A. High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Chem Rev 2018; 118:5690-5754. [PMID: 29785854 DOI: 10.1021/acs.chemrev.8b00045] [Citation(s) in RCA: 173] [Impact Index Per Article: 28.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.
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Affiliation(s)
- Binghao Wang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Wei Huang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Mohammed Al-Hashimi
- Department of Chemistry , Texas A&M University at Qatar , PO Box 23874, Doha , Qatar
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Flexterra Corporation , 8025 Lamon Avenue , Skokie , Illinois 60077 , United States
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20
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Casalini S, Bortolotti CA, Leonardi F, Biscarini F. Self-assembled monolayers in organic electronics. Chem Soc Rev 2018; 46:40-71. [PMID: 27722675 DOI: 10.1039/c6cs00509h] [Citation(s) in RCA: 220] [Impact Index Per Article: 36.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Self-assembly is possibly the most effective and versatile strategy for surface functionalization. Self-assembled monolayers (SAMs) can be formed on (semi-)conductor and dielectric surfaces, and have been used in a variety of technological applications. This work aims to review the strategy behind the design and use of self-assembled monolayers in organic electronics, discuss the mechanism of interaction of SAMs in a microscopic device, and highlight the applications emerging from the integration of SAMs in an organic device. The possibility of performing surface chemistry tailoring with SAMs constitutes a versatile approach towards the tuning of the electronic and morphological properties of the interfaces relevant to the response of an organic electronic device. Functionalisation with SAMs is important not only for imparting stability to the device or enhancing its performance, as sought at the early stages of development of this field. SAM-functionalised organic devices give rise to completely new types of behavior that open unprecedented applications, such as ultra-sensitive label-free biosensors and SAM/organic transistors that can be used as robust experimental gauges for studying charge tunneling across SAMs.
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Affiliation(s)
- Stefano Casalini
- Life Sciences Department, University of Modena and Reggio Emilia, Via Campi 103, 41125 Modena, Italy.
| | - Carlo Augusto Bortolotti
- Life Sciences Department, University of Modena and Reggio Emilia, Via Campi 103, 41125 Modena, Italy. and Consiglio Nazionale delle Ricerche (CNR), Institute for Nanosciences, Via Campi 213/a, 41125 Modena, Italy
| | - Francesca Leonardi
- Consiglio Nazionale delle Ricerche (CNR), Institute for Nanostructured Materials (ISMN), Via P. Gobetti 101, 40129 Bologna, Italy
| | - Fabio Biscarini
- Life Sciences Department, University of Modena and Reggio Emilia, Via Campi 103, 41125 Modena, Italy. and Consiglio Nazionale delle Ricerche (CNR), Institute for Nanostructured Materials (ISMN), Via P. Gobetti 101, 40129 Bologna, Italy
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21
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Yokota T, Kajitani T, Shidachi R, Tokuhara T, Kaltenbrunner M, Shoji Y, Ishiwari F, Sekitani T, Fukushima T, Someya T. A few-layer molecular film on polymer substrates to enhance the performance of organic devices. NATURE NANOTECHNOLOGY 2018; 13:139-144. [PMID: 29255288 DOI: 10.1038/s41565-017-0018-6] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Accepted: 10/17/2017] [Indexed: 06/07/2023]
Abstract
In organic electronics the functionalization of dielectric substrates with self-assembled monolayers is regarded as an effective surface modification strategy that may significantly improve the resulting device performance. However, this technique is not suitable for polymer substrates typically used in flexible electronics. Here, we report organic modifiers based on a paraffinic tripodal triptycene, which self-assembles into a completely oriented two-dimensional hexagonal triptycene array and one-dimensional layer stacking structure on polymer surfaces. Such few-layer films are analogous to conventional self-assembled monolayers on inorganic substrates in that they neutralize the polymer surface. Furthermore, the triptycene films significantly improve the crystallinity of an organic semiconductor and the overall performance of organic thin-film transistors, therefore enabling the fabrication of high-performance organic complementary circuits on polymer substrates with high oscillation speeds and low operation voltage.
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Affiliation(s)
- Tomoyuki Yokota
- Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan.
- Bio-Harmonized Electronics Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), Tokyo, Japan.
| | - Takashi Kajitani
- Bio-Harmonized Electronics Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), Tokyo, Japan
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Japan
- RIKEN SPring-8 Center, Hyogo, Japan
| | - Ren Shidachi
- Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
| | - Takeyoshi Tokuhara
- Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
| | - Martin Kaltenbrunner
- Bio-Harmonized Electronics Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), Tokyo, Japan
- Linz Institute of Technology (LIT), Johannes Kepler University Linz, Linz, Austria
| | - Yoshiaki Shoji
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Japan
| | - Fumitaka Ishiwari
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Japan
| | - Tsuyoshi Sekitani
- Bio-Harmonized Electronics Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), Tokyo, Japan
- The Institute of Scientific and Industrial Research (ISIR), Osaka University, Osaka, Japan
| | - Takanori Fukushima
- Bio-Harmonized Electronics Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), Tokyo, Japan.
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Japan.
| | - Takao Someya
- Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan.
- Bio-Harmonized Electronics Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), Tokyo, Japan.
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22
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Abstract
A comprehensive overview of organic semiconductor crystals is provided, including the physicochemical features, the control of crystallization and the device physics.
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Affiliation(s)
- Chengliang Wang
- School of Optical and Electronic Information
- Huazhong University of Science and Technology
- Wuhan 430074
- China
- Wuhan National Laboratory for Optoelectronics (WNLO)
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences
- Key Laboratory of Organic Solids
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences
- Key Laboratory of Organic Solids
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Wenping Hu
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)
- Department of Chemistry
- School of Science
- Tianjin University
- Tianjin 300072
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23
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Jang S, Son D, Hwang S, Kang M, Lee SK, Jeon DY, Bae S, Lee SH, Lee DS, Kim TW. Hybrid dielectrics composed of Al 2O 3 and phosphonic acid self-assembled monolayers for performance improvement in low voltage organic field effect transistors. NANO CONVERGENCE 2018; 5:20. [PMID: 30101053 PMCID: PMC6061253 DOI: 10.1186/s40580-018-0152-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2018] [Accepted: 07/04/2018] [Indexed: 05/19/2023]
Abstract
Low voltage operational organic transistors (< 4 V) based on pentacene were successfully fabricated with hybrid dielectric films composed of aluminum oxide using atomic layer deposition and various phosphonic acid-based self-assembled monolayers as the gate dielectrics. High capacitances up to 279 nF/cm2, low leakage current densities of 10-8 A/cm2 at 6 V, and high breakdown fields up to 7.5 MV/cm were obtained. The transistors with the octadecylphosphonic acid hybrid dielectric exhibited an improved saturation mobility of 0.58 cm2/Vs, a subthreshold slope of 151 mV/decade, a threshold voltage of - 1.84 V and an on-off current ratio of 106. The low surface energies of the self-assembled monolayers having non-polar terminal groups, such as methyl and pentafluorophenoxy, improved the carrier conduction of the transistors due to the pentacene growth with an edge-on orientation for low voltage operation. The pentafluorophenoxy end-group showed an accumulation of holes at the semiconductor-dielectric interface.
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Affiliation(s)
- Sukjae Jang
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Dabin Son
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Sunbin Hwang
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Minji Kang
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Seoung-Ki Lee
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Dae-Young Jeon
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Sukang Bae
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Sang Hyun Lee
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Dong Su Lee
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
| | - Tae-Wook Kim
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Jeollabuk-do 55324 Republic of Korea
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24
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Li Q, Li S, Yang D, Su W, Wang Y, Zhou W, Liu H, Xie S. Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors. NANOTECHNOLOGY 2017; 28:435203. [PMID: 28832342 DOI: 10.1088/1361-6528/aa87fa] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO2 dielectric. The results showed that the organic-modified SiO2 dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO2 dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO2 allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO2 dielectric although the thickness of OTS layer is only ∼2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.
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Affiliation(s)
- Qian Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing 100190, People's Republic of China
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25
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Xu JL, Dai RX, Xin Y, Sun YL, Li X, Yu YX, Xiang L, Xie D, Wang SD, Ren TL. Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene. Sci Rep 2017; 7:6751. [PMID: 28754899 PMCID: PMC5533747 DOI: 10.1038/s41598-017-05967-w] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2016] [Accepted: 06/06/2017] [Indexed: 11/09/2022] Open
Abstract
Single-walled carbon nanotubes (SWCNTs) offer great potential for field-effect transistors and integrated circuit applications due to their extraordinary electrical properties. To date, as-made SWCNT transistors are usually p-type in air, and it still remains challenging for realizing n-type devices. Herein, we present efficient and reversible electron doping of semiconductor-enriched single-walled carbon nanotubes (s-SWCNTs) by firstly utilizing decamethylcobaltocene (DMC) deposited by a simple spin-coating process at room temperature as an electron donor. A n-type transistor behavior with high on current, large I on /I off ratio and excellent uniformity is obtained by surface charge transfer from the electron donor DMC to acceptor s-SWCNTs, which is further corroborated by the Raman spectra and the ab initio simulation results. The DMC dopant molecules could be reversibly removed by immersion in N, N-Dimethylformamide solvent, indicating its reversibility and providing another way to control the carrier concentration effectively as well as selective removal of surface dopants on demand. Furthermore, the n-type behaviors including threshold voltage, on current, field-effect mobility, contact resistances, etc. are well controllable by adjusting the surface doping concentration. This work paves the way to explore and obtain high-performance n-type nanotubes for future complementary CMOS circuit and system applications.
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Affiliation(s)
- Jian-Long Xu
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China. .,Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu Province, China.
| | - Rui-Xuan Dai
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Yan Xin
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Yi-Lin Sun
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Xian Li
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Yang-Xin Yu
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Lan Xiang
- Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Dan Xie
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
| | - Sui-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu Province, China
| | - Tian-Ling Ren
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
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26
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Choi J, Joo M, Seong H, Pak K, Park H, Park CW, Im SG. Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2017; 9:20808-20817. [PMID: 28569054 DOI: 10.1021/acsami.7b03537] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers by a free radical polymerization via a one-step, vapor-phase, initiated chemical vapor deposition (iCVD) method. The chemical composition of the copolymers was systematically optimized by tuning the input ratio of the vaporized CEA and DEGDVE monomers to achieve a high dielectric constant (k) as well as excellent dielectric strength. Interestingly, DEGDVE was nonhomopolymerizable but it was able to form a copolymer with other kinds of monomers. Utilizing this interesting property of the DEGDVE cross-linker, the dielectric constant of the copolymer film could be maximized with minimum incorporation of the cross-linker moiety. To our knowledge, this is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved. The dielectric film with the optimized composition showed a dielectric constant greater than 6 and extremely low leakage current densities (<3 × 10-8 A/cm2 in the range of ±2 MV/cm), with a thickness of only 20 nm, which is an outstanding thickness for down-scalable cyanide polymer dielectrics. With this high-k dielectric layer, organic thin-film transistors (OTFTs) and oxide TFTs were fabricated, which showed hysteresis-free transfer characteristics with an operating voltage of less than 3 V. Furthermore, the flexible OTFTs retained their low gate leakage current and ideal TFT characteristics even under 2% applied tensile strain, which makes them some of the most flexible OTFTs reported to date. We believe that these ultrathin, high-k organic dielectric films with excellent mechanical flexibility will play a crucial role in future soft electronics.
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Affiliation(s)
- Junhwan Choi
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Munkyu Joo
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyejeong Seong
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kwanyong Pak
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hongkeun Park
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chan Woo Park
- Wearable Device Research Section, Electronics and Telecommunications Research Institute (ETRI) , 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea
| | - Sung Gap Im
- Chemical and Biomolecular Engineering and KI for NanoCentury at Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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27
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Schmaltz T, Sforazzini G, Reichert T, Frauenrath H. Self-Assembled Monolayers as Patterning Tool for Organic Electronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605286. [PMID: 28160336 DOI: 10.1002/adma.201605286] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2016] [Revised: 11/17/2016] [Indexed: 06/06/2023]
Abstract
The patterning of functional materials represents a crucial step for the implementation of organic semiconducting materials into functional devices. Classical patterning techniques such as photolithography or shadow masking exhibit certain limitations in terms of choice of materials, processing techniques and feasibility for large area fabrication. The use of self-assembled monolayers (SAMs) as a patterning tool offers a wide variety of opportunities, from the region-selective deposition of active components to guiding the crystallization direction. Here, we discuss general techniques and mechanisms for SAM-based patterning and show that all necessary components for organic electronic devices, i.e., conducting materials, dielectrics, organic semiconductors, and further functional layers can be patterned with the use of self-assembled monolayers. The advantages and limitations, and potential further applications of patterning approaches based on self-assembled monolayers are critically discussed.
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Affiliation(s)
- Thomas Schmaltz
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Giuseppe Sforazzini
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Thomas Reichert
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Holger Frauenrath
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
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28
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Byun HR, You EA, Ha YG. Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:7347-7354. [PMID: 28150486 DOI: 10.1021/acsami.6b15798] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm2), insulating property (leakage current densities <10-7 A/cm2), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.
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Affiliation(s)
- Hye-Ran Byun
- Department of Chemistry, Kyonggi University , Suwon, Gyeonggi-Do, 16227, Republic of Korea
| | - Eun-Ah You
- Center for Nano-Bio Measurement, Korea Research Institute of Standards and Science , Daejeon, 34113, Republic of Korea
| | - Young-Geun Ha
- Department of Chemistry, Kyonggi University , Suwon, Gyeonggi-Do, 16227, Republic of Korea
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29
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Kim S, Ha T, Yoo S, Ka JW, Kim J, Won JC, Choi DH, Jang KS, Kim YH. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors. Phys Chem Chem Phys 2017; 19:15521-15529. [DOI: 10.1039/c7cp01535f] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).
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Affiliation(s)
- Sohee Kim
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
| | - Taewook Ha
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- Department of Chemistry
| | - Sungmi Yoo
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
| | - Jae-Won Ka
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
| | - Jinsoo Kim
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- KRICT School
| | - Jong Chan Won
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- KRICT School
| | - Dong Hoon Choi
- Department of Chemistry
- Korea University
- Seoul 02841
- Republic of Korea
| | - Kwang-Suk Jang
- Department of Chemical Engineering and Research Center of Chemical Technology
- Hankyong National University
- Anseong 17579
- Republic of Korea
| | - Yun Ho Kim
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- KRICT School
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30
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Adhikari JM, Gadinski MR, Li Q, Sun KG, Reyes-Martinez MA, Iagodkine E, Briseno AL, Jackson TN, Wang Q, Gomez ED. Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:10095-10102. [PMID: 27717022 DOI: 10.1002/adma.201602873] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2016] [Revised: 08/04/2016] [Indexed: 06/06/2023]
Abstract
A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors.
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Affiliation(s)
- Jwala M Adhikari
- Department of Chemical Engineering and Materials Research Institute, 106 Fenske Laboratory, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Matthew R Gadinski
- Material Science and Engineering, N-348 Millennium Science Complex, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Qi Li
- Material Science and Engineering, N-348 Millennium Science Complex, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Kaige G Sun
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Marcos A Reyes-Martinez
- University of Massachusetts Amherst, The Dow Chemical Company, 455 Forest St, Marlborough, MA, 01752, USA
| | - Elissei Iagodkine
- University of Massachusetts Amherst, The Dow Chemical Company, 455 Forest St, Marlborough, MA, 01752, USA
| | - Alejandro L Briseno
- University of Massachusetts Amherst, The Dow Chemical Company, 455 Forest St, Marlborough, MA, 01752, USA
| | - Thomas N Jackson
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Qing Wang
- Material Science and Engineering, N-348 Millennium Science Complex, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Enrique D Gomez
- Department of Chemical Engineering and Materials Research Institute, 106 Fenske Laboratory, The Pennsylvania State University, University Park, PA, 16802, USA
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31
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Huang W, Markwart JC, Briseno AL, Hayward RC. Orthogonal Ambipolar Semiconductor Nanostructures for Complementary Logic Gates. ACS NANO 2016; 10:8610-8619. [PMID: 27548007 DOI: 10.1021/acsnano.6b03942] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report orthogonal ambipolar semiconductors that exhibit hole and electron transport in perpendicular directions based on aligned films of nanocrystalline "shish-kebabs" containing poly(3-hexylthiophene) (P3HT) and N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PDI) as p- and n-type components, respectively. Polarized optical microscopy, scanning electron microscopy, and X-ray diffraction measurements reveal a high degree of in-plane alignment. Relying on the orientation of interdigitated electrodes to enable efficient charge transport from either the respective p- or n-channel materials, we demonstrate semiconductor films with high anisotropy in the sign of charge carriers. Films of these aligned crystalline semiconductors were used to fabricate complementary inverter devices, which exhibited good switching behavior and a high noise margin of 80% of 1/2 Vdd. Moreover, complementary "NAND" and "NOR" logic gates were fabricated and found to exhibit excellent voltage transfer characteristics and low static power consumption. The ability to optimize the performance of these devices, simply by adjusting the solution concentrations of P3HT and PDI, makes this a simple and versatile method for preparing ambipolar organic semiconductor devices and high-performance logic gates. Further, we demonstrate that this method can also be applied to mixtures of PDI with another conjugated polymer, poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]) (PBTTT), with better hole transport characteristics than P3HT, opening the door to orthogonal ambipolar semiconductors with higher performance.
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Affiliation(s)
- Weiguo Huang
- Department of Polymer Science and Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States
| | - Jens C Markwart
- Department of Polymer Science and Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States
- Department of Chemistry, Johannes Gutenberg University Mainz , 55128 Mainz, Germany
| | - Alejandro L Briseno
- Department of Polymer Science and Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States
| | - Ryan C Hayward
- Department of Polymer Science and Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States
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32
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Choi S, Fuentes-Hernandez C, Wang CY, Khan TM, Larrain FA, Zhang Y, Barlow S, Marder SR, Kippelen B. A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:24744-24752. [PMID: 27579570 DOI: 10.1021/acsami.6b07029] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report on the reduction of contact resistance in solution-processed TIPS-pentacene (6,13-bis(triisopropylsilylethynyl)pentacene) and PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) top-gate bottom-contact organic field-effect transistors (OFETs) by using different contact-modification strategies. The study compares the contact resistance values in devices that comprise Au source/drain electrodes either treated with 2,3,4,5,6-pentafluorothiophenol (PFBT), or modified with an evaporated thin layer of the metal-organic molecular dopant molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3), or modified with a thin layer of the oxide MoO3. An improved performance is observed in devices modified with Mo(tfd)3 or MoO3 as compared to devices in which Au electrodes are modified with PFBT. We discuss the origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes.
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Affiliation(s)
- Sangmoo Choi
- Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States
| | - Canek Fuentes-Hernandez
- Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States
| | - Cheng-Yin Wang
- Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States
| | - Talha M Khan
- Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States
| | - Felipe A Larrain
- Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States
| | - Yadong Zhang
- Center for Organic Photonics and Electronics (COPE), School of Chemistry and Biochemistry, Georgia Institute of Technology , Atlanta, Georgia 30332-0400, United States
| | - Stephen Barlow
- Center for Organic Photonics and Electronics (COPE), School of Chemistry and Biochemistry, Georgia Institute of Technology , Atlanta, Georgia 30332-0400, United States
| | - Seth R Marder
- Center for Organic Photonics and Electronics (COPE), School of Chemistry and Biochemistry, Georgia Institute of Technology , Atlanta, Georgia 30332-0400, United States
| | - Bernard Kippelen
- Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States
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33
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Dao TT, Sakai H, Nguyen HT, Ohkubo K, Fukuzumi S, Murata H. Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer. ACS APPLIED MATERIALS & INTERFACES 2016; 8:18249-18255. [PMID: 27348479 DOI: 10.1021/acsami.6b03183] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.
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Affiliation(s)
- Toan Thanh Dao
- Faculty of Electrical-Electronic Engineering, University of Transport and Communications , No. 3, Cau Giay Street, Dong Da, Hanoi Vietnam
| | - Heisuke Sakai
- Japan Advanced Institute of Science and Technology , 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Hai Thanh Nguyen
- Faculty of Electrical-Electronic Engineering, University of Transport and Communications , No. 3, Cau Giay Street, Dong Da, Hanoi Vietnam
| | - Kei Ohkubo
- Division of Applied Chemistry, Graduate School of Engineering, Osaka University , Suita, Osaka 565-0871, Japan
- Department of Chemistry and Nano Science, Ewha Womans University , Seoul 120-750, Korea
| | - Shunichi Fukuzumi
- Department of Chemistry and Nano Science, Ewha Womans University , Seoul 120-750, Korea
- Faculty of Science and Technology, Meijo University, SENTAN, Japan Science and Technology Agency (JST) , Nagoya, Aichi 468-8502, Japan
| | - Hideyuki Murata
- Japan Advanced Institute of Science and Technology , 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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34
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Geier ML, Moudgil K, Barlow S, Marder SR, Hersam MC. Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer. NANO LETTERS 2016; 16:4329-4334. [PMID: 27253896 DOI: 10.1021/acs.nanolett.6b01393] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.
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Affiliation(s)
- Michael L Geier
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Karttikay Moudgil
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Stephen Barlow
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Seth R Marder
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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35
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Prisawong P, Zalar P, Reuveny A, Matsuhisa N, Lee W, Yokota T, Someya T. Vacuum Ultraviolet Treatment of Self-Assembled Monolayers: A Tool for Understanding Growth and Tuning Charge Transport in Organic Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:2049-2054. [PMID: 26754961 DOI: 10.1002/adma.201504724] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2015] [Revised: 11/16/2015] [Indexed: 06/05/2023]
Abstract
Vacuum ultraviolet irradiation is used as a tool to systematically study the morphology, growth, and performance of small-molecule organic field-effect transistors. The surface energy can be carefully and precisely tuned by varying the dose of irradiation, allowing for the systematic study of the growth of an emerging organic semiconductor. This technique helps to methodically control the morphology and performance of organic semiconductors.
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Affiliation(s)
- Pollawat Prisawong
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Peter Zalar
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Amir Reuveny
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Naoji Matsuhisa
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Wonryung Lee
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Tomoyuki Yokota
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Takao Someya
- Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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36
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McMorrow JJ, Walker AR, Sangwan VK, Jariwala D, Hoffman E, Everaerts K, Facchetti A, Hersam MC, Marks TJ. Solution-Processed Self-Assembled Nanodielectrics on Template-Stripped Metal Substrates. ACS APPLIED MATERIALS & INTERFACES 2015; 7:26360-26366. [PMID: 26479833 DOI: 10.1021/acsami.5b07744] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness <0.4 nm), chemically uniform nature of template-stripped metal substrates to demonstrate the same exceptional electronic uniformity (capacitance ∼700 nF cm(-2), leakage current <1 μA cm(-2) at -2 MV cm(-1)) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.
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Affiliation(s)
| | | | | | | | | | | | - Antonio Facchetti
- Polyera Corporation , 8045 Lamon Avenue, Skokie, Illinois 60077, United States
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37
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Lee YT, Kwon H, Kim JS, Kim HH, Lee YJ, Lim JA, Song YW, Yi Y, Choi WK, Hwang DK, Im S. Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer. ACS NANO 2015; 9:10394-10401. [PMID: 26370537 DOI: 10.1021/acsnano.5b04592] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.
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Affiliation(s)
- Young Tack Lee
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
| | - Hyeokjae Kwon
- Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea
| | - Jin Sung Kim
- Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea
| | - Hong-Hee Kim
- Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
| | - Yun Jae Lee
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
| | - Jung Ah Lim
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
| | - Yong-Won Song
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
| | - Yeonjin Yi
- Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea
| | - Won-Kook Choi
- Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
- Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST) , Daejun 305-350, Korea
| | - Do Kyung Hwang
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea
- Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST) , Daejun 305-350, Korea
| | - Seongil Im
- Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea
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38
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Aghamohammadi M, Rödel R, Zschieschang U, Ocal C, Boschker H, Weitz RT, Barrena E, Klauk H. Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects. ACS APPLIED MATERIALS & INTERFACES 2015; 7:22775-85. [PMID: 26415103 DOI: 10.1021/acsami.5b02747] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.
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Affiliation(s)
- Mahdieh Aghamohammadi
- Max Planck Institute for Solid State Research , Heisenbergstr.1, 70569, Stuttgart, Germany
| | - Reinhold Rödel
- Max Planck Institute for Solid State Research , Heisenbergstr.1, 70569, Stuttgart, Germany
| | - Ute Zschieschang
- Max Planck Institute for Solid State Research , Heisenbergstr.1, 70569, Stuttgart, Germany
| | - Carmen Ocal
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC) , Campus de la UAB, 08193 Bellaterra, Spain
| | - Hans Boschker
- Max Planck Institute for Solid State Research , Heisenbergstr.1, 70569, Stuttgart, Germany
| | - R Thomas Weitz
- BASF SE , GVE/T - J542s, 67056 Ludwigshafen, Germany
- Innovation Lab GmbH , Speyerer Str. 4, 69115 Heidelberg, Germany
| | - Esther Barrena
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC) , Campus de la UAB, 08193 Bellaterra, Spain
| | - Hagen Klauk
- Max Planck Institute for Solid State Research , Heisenbergstr.1, 70569, Stuttgart, Germany
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39
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Kraft U, Sejfić M, Kang MJ, Takimiya K, Zaki T, Letzkus F, Burghartz JN, Weber E, Klauk H. Flexible low-voltage organic complementary circuits: finding the optimum combination of semiconductors and monolayer gate dielectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:207-14. [PMID: 25330764 DOI: 10.1002/adma.201403481] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2014] [Revised: 09/10/2014] [Indexed: 05/19/2023]
Abstract
Low-voltage p-channel and n-channel organic transistors with channel lengths down to 0.5 μm using four small-molecule semiconductors and ultra-thin dielectrics based on two different phosphonic acid monolayers are fabricated on plastic substrates and studied in terms of effective mobility, intrinsic mobility and contact resistance. For the optimum materials combination, flexible complementary circuits have signal delays of 3.1 μs at 5 V.
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Affiliation(s)
- Ulrike Kraft
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany; Institute for Organic Chemistry, Technical University Freiberg, 09596, Freiberg, Germany
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40
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Single-crystal field-effect transistors of new Cl2-NDI polymorph processed by sublimation in air. Nat Commun 2015; 6:5954. [DOI: 10.1038/ncomms6954] [Citation(s) in RCA: 126] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2014] [Accepted: 11/25/2014] [Indexed: 12/23/2022] Open
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41
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Schmaltz T, Khassanov A, Steinrück HG, Magerl A, Hirsch A, Halik M. Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors. NANOSCALE 2014; 6:13022-13027. [PMID: 25245837 DOI: 10.1039/c4nr03557g] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The control of order in organic semiconductor systems is crucial to achieve desired properties in electronic devices. We have studied the order in fullerene functionalized self-assembled monolayers by mixing the active molecules with supporting alkyl phosphonic acids of different chain length. By adjusting the length of the molecules, structural modifications of the alignment of the C60 head groups within the SAM can be tuned in a controlled way. These changes on the sub-nanometre scale were analysed by grazing incidence X-ray diffraction and X-ray reflectivity. To study the electron transport properties across these layers, self-assembled monolayer field-effect transistors (SAMFETs) were fabricated containing only the single fullerene monolayer as semiconductor. Electrical measurements revealed that a high 2D crystalline order is not the only important aspect. If the fullerene head groups are too confined by the supporting alkyl phosphonic acid molecules, defects in the crystalline C60 film, such as grain boundaries, start to strongly limit the charge transport properties. By close interpretation of the results of structural investigations and correlating them to the results of electrical characterization, an optimum chain length of the supporting alkyl phosphonic acids in the range of C10 was determined. With this study we show that minor changes in the order on the sub-nanometre scale, can strongly influence electronic properties of functional self-assembled monolayers.
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Affiliation(s)
- Thomas Schmaltz
- Organic Materials & Devices (OMD), Institute of Polymer Materials, University Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany.
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42
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Mityashin A, Roscioni OM, Muccioli L, Zannoni C, Geskin V, Cornil J, Janssen D, Steudel S, Genoe J, Heremans P. Multiscale modeling of the electrostatic impact of self-assembled monolayers used as gate dielectric treatment in organic thin-film transistors. ACS APPLIED MATERIALS & INTERFACES 2014; 6:15372-8. [PMID: 25119143 DOI: 10.1021/am503873f] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
This study sheds light on the microscopic mechanisms by which self-assembled monolayers (SAMs) determine the onset voltage in organic thin-film transistors (OTFTs). Experiments and modeling are combined to investigate the self-assembly and electrostatic interaction processes in prototypical OTFT structures (SiO2/SAM/pentacene), where alkylated and fluoroalkylated silane SAMs are compared. The results highlight the coverage-dependent impact of the SAM on the density of semiconductor states and enable the rationalization and the control of the OTFT characteristics.
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43
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Portilla L, Halik M. Smoothly tunable surface properties of aluminum oxide core-shell nanoparticles by a mixed-ligand approach. ACS APPLIED MATERIALS & INTERFACES 2014; 6:5977-5982. [PMID: 24666320 DOI: 10.1021/am501155r] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We present a facile solution-based procedure for tailoring the surface properties of aluminum oxide nanoparticles (AlOx-NPs) by the formation of tunable core-shell systems with self-assembled monolayers. By employing chained molecules with a phosphonic acid anchor group and either hydrophobic or hydrophilic chains the surface properties of the nanoparticles change dramatically. So, the solubility can be tuned orthogonal from trifluorotoluene (CF3-C6H5) for hydrophobic shell to water (H2O) for hydrophilic functionalization respectively. Spray coated films of those functionalized nanoparticles exhibited superhydrophobic or superhydrophilic properties. The surface properties can be tuned smoothly by the formation of a mixed ligand monolayer from corresponding stoichiometric mixtures of the ligands. The core-shell nanoparticles were investigated by means of thermogravimetric analysis, TGA; Fourier transform infrared spectroscopy, FTIR; and static contact angle goniometry, SCA. The effect of different dipole moments of the SAM molecules in mixed shell nanoparticles to their stability in dispersions was studied by zeta potential measurements.
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Affiliation(s)
- Luis Portilla
- Organic Materials & Devices (OMD), Institute of Polymer Materials, University Erlangen-Nürnberg , Martensstraße 7, 91058 Erlangen, Germany
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Martínez Hardigree JF, Katz HE. Through thick and thin: tuning the threshold voltage in organic field-effect transistors. Acc Chem Res 2014; 47:1369-77. [PMID: 24684566 DOI: 10.1021/ar5000049] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.
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Affiliation(s)
- Josué F. Martínez Hardigree
- Department of Materials Science
and Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Howard E. Katz
- Department of Materials Science
and Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
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Wang H, Wei P, Li Y, Han J, Lee HR, Naab BD, Liu N, Wang C, Adijanto E, Tee BCK, Morishita S, Li Q, Gao Y, Cui Y, Bao Z. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits. Proc Natl Acad Sci U S A 2014; 111:4776-81. [PMID: 24639537 PMCID: PMC3977307 DOI: 10.1073/pnas.1320045111] [Citation(s) in RCA: 87] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at V(DD) = 80 V (70% of 1/2V(DD)) and a gain of 85. Additionally, robust SWNT complementary metal-oxide-semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate.
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Affiliation(s)
| | | | | | | | | | | | | | - Chenggong Wang
- Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
| | | | | | | | | | - Yongli Gao
- Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
| | - Yi Cui
- Departments of Materials Science and Engineering
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Bauer T, Schmaltz T, Lenz T, Halik M, Meyer B, Clark T. Phosphonate- and carboxylate-based self-assembled monolayers for organic devices: a theoretical study of surface binding on aluminum oxide with experimental support. ACS APPLIED MATERIALS & INTERFACES 2013; 5:6073-80. [PMID: 23734774 DOI: 10.1021/am4008374] [Citation(s) in RCA: 64] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
We report a computational study on the chemical bonding of phosphonates and carboxylates to aluminum oxide surfaces and how the binding properties are related to the amount of water in the experimental environment. Two different surface structures were used in the calculations in order to model representative adsorption sites for the phosphonates and carboxylates and to account for the amorphous nature of the hydroxylated AlOx films in experiment. For the phosphonates, we find that the thermodynamically preferred binding mode changes between mono-, bi-, and tridentate depending on the surface structure and the amount of residual water. For the carboxylates, on the other hand, monodentate adsorption is always lower in energy at all experimental conditions. Phosphonates are more strongly bound to aluminum oxide than carboxylates, so that carboxylates can be replaced easily by phosphonates. The theoretical findings are consistent with those obtained in adsorption, desorption, and exchange reactions of n-alkyl phosphonic and carboxylic acids on AlOx surfaces. The results provide an atomistic understanding of the adsorption and help to optimize experimental conditions for self-assembly of organic films on aluminum oxide surfaces.
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Affiliation(s)
- Thilo Bauer
- Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany
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47
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Jäger CM, Schmaltz T, Novak M, Khassanov A, Vorobiev A, Hennemann M, Krause A, Dietrich H, Zahn D, Hirsch A, Halik M, Clark T. Improving the Charge Transport in Self-Assembled Monolayer Field-Effect Transistors: From Theory to Devices. J Am Chem Soc 2013; 135:4893-900. [DOI: 10.1021/ja401320n] [Citation(s) in RCA: 63] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Affiliation(s)
| | - Thomas Schmaltz
- Organic Materials & Devices, Institute of Polymer Materials, Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 7, 91058 Erlangen, Germany
| | - Michael Novak
- Organic Materials & Devices, Institute of Polymer Materials, Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 7, 91058 Erlangen, Germany
| | - Artoem Khassanov
- Organic Materials & Devices, Institute of Polymer Materials, Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 7, 91058 Erlangen, Germany
| | - Alexei Vorobiev
- European Synchrotron Radiation Facility (ESRF), 6 rue Jules Horowitz BP220,
38043 Grenoble Cedex, France
| | | | | | | | | | - Andreas Hirsch
- Chair of Organic
Chemistry II, University Erlangen-Nürnberg, Henkestrasse 42, 91054 Erlangen, Germany
| | - Marcus Halik
- Organic Materials & Devices, Institute of Polymer Materials, Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 7, 91058 Erlangen, Germany
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Ha M, Seo JWT, Prabhumirashi PL, Zhang W, Geier ML, Renn MJ, Kim CH, Hersam MC, Frisbie CD. Aerosol jet printed, low voltage, electrolyte gated carbon nanotube ring oscillators with sub-5 μs stage delays. NANO LETTERS 2013; 13:954-960. [PMID: 23394463 DOI: 10.1021/nl3038773] [Citation(s) in RCA: 54] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
A central challenge for printed electronics is to achieve high operating frequencies (short transistor switching times) at low supply biases compatible with thin film batteries. In this report, we demonstrate partially printed five-stage ring oscillators with >20 kHz operating frequencies and stage delays <5 μs at supply voltages below 3 V. The fastest ring oscillator achieved 1.2 μs delay time at 2 V supply. The inverter stages in these ring oscillators were based on ambipolar thin film transistors (TFTs) employing semiconducting, single-walled carbon nanotube (CNT) networks and a high capacitance (∼1 μF/cm(2)) ion gel electrolyte as the gate dielectric. All materials except the source and drain electrodes were aerosol jet printed. The TFTs exhibited high electron and hole mobilities (∼20 cm(2)/(V s)) and ON/OFF current ratios (up to 10(5)). Inverter switching times t were systematically characterized as a function of transistor channel length and ionic conductivity of the gel dielectric, demonstrating that both the semiconductor and the ion gel play a role in switching speed. Quantitative scaling analysis suggests that with suitable optimization low voltage, printed ion gel gated CNT inverters could operate at frequencies on the order of 1 MHz.
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Affiliation(s)
- Mingjing Ha
- Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
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Guerrero G, Alauzun JG, Granier M, Laurencin D, Mutin PH. Phosphonate coupling molecules for the control of surface/interface properties and the synthesis of nanomaterials. Dalton Trans 2013; 42:12569-85. [DOI: 10.1039/c3dt51193f] [Citation(s) in RCA: 172] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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50
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Bulliard X, Benayad A, Ihn SG, Yun S, Park JH, Choi W, Choi YS, Kim Y. Autocatalytic effect of amine-terminated precursors in mixed self-assembled monolayers. RSC Adv 2013. [DOI: 10.1039/c2ra21855k] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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