2D Materials for Optical Modulation: Challenges and Opportunities

Giant Terahertz Birefringence in an Ultrathin Anisotropic Semimetal

Manipulating the polarization of light at the nanoscale is key to the development of next-generation optoelectronic devices. This is typically done via waveplates using optically anisotropic crystals, with thicknesses on the order of the wavelength. Here, using a novel ultrafast electron-beam-based technique sensitive to transient near fields at THz frequencies, we observe a giant anisotropy in the linear optical response in the semimetal WTe2 and demonstrate that one can tune the THz polarization using a 50 nm thick film, acting as a broadband wave plate with thickness 3 orders of magnitude smaller than the wavelength. The observed circular deflections of the electron beam are consistent with simulations tracking the trajectory of the electron beam in the near field of the THz pulse. This finding offers a promising approach to enable atomically thin THz polarization control using anisotropic semimetals and defines new approaches for characterizing THz near-field optical response at far-subwavelength length scales.

Layer-by-layer thinning of two-dimensional materials

Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.

Mild chemistry synthesis of ultrathin Bi2O2S nanosheets exhibiting 2D-ferroelectricity at room temperature

Modern technology demands miniaturization of electronic components to build small, light, and portable devices. Hence, discovery and synthesis of new non-toxic, low cost, ultra-thin ferroelectric materials having potential applications in various electronic and optoelectronic devices are of paramount importance. However, achieving room-temperature ferroelectricity in two dimensional (2D) ultra-thin systems remains a major challenge as conventional three-dimensional ferroelectric materials lose their ferroelectricity when the thickness is brought down below a critical value owing to the depolarization field. Herein, we report room-temperature ferroelectricity in ultra-thin single-crystalline 2D nanosheets of Bi2O2S synthesized by a simple, rapid, and scalable solution-based soft chemistry method. The ferroelectric ground state of Bi2O2S nanosheets is confirmed by temperature-dependent dielectric measurements as well as piezoelectric force microscopy and spectroscopy. High resolution transmission electron microscopy analysis and density functional theory-based calculations suggest that the ferroelectricity in Bi2O2S nanosheets arises due to the local distortion of Bi2O2 layers, which destroys the local inversion symmetry of Bi2O2S.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Investigations on Optical Absorption and the Pyro-phototronic Effect with Selectively Patterned Black Silicon for Advanced Photodetection

A novel property existing in the stain-etching technique that eliminates the need for expensive etchant masks in the texturization process of silicon wafers was identified. Through the combination of grayscale lithography and stain-etching methodologies, selective patterning of silicon with AR-P 3510 T, a positive-photoresist mask, was carried out. The etch area ratio was varied in nine different patterns of various feature sizes ranging from 400 to 1500 μm. The optical characteristics of the patterned substrates were determined from diffuse reflectance spectroscopy analysis, and the results were supported with finite-difference time-domain simulations. Complimenting the improvement in optical properties, the electrical losses in microwell-patterned photodetector devices have been reduced with an electro-optic optimum value of the surface enhancement factor, γ. The photodetecting efficiency of a selectively patterned microwell photodetector device exceeded the planar and black silicon photodetector devices with a considerable improvement in the pyro-phototronic effect. This work suggests an alternative for black silicon optoelectronic devices providing a new route to fabricate selectively patterned substrates with an achieved detectivity 16- and 20-fold higher than black and planar silicon photodetector devices, respectively.

Nonlinear Optical Properties of 2D Materials and their Applications

2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light-matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second-order and third-order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second-order susceptibility χ(2) and third-order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second-harmonic generation (SHG) and third-harmonic generation (THG) for 2D materials are presented.

Large second-order susceptibility from a quantized indium tin oxide monolayer

Due to their high optical transparency and electrical conductivity, indium tin oxide thin films are a promising material for photonic circuit design and applications. However, their weak optical nonlinearity has been a substantial barrier to nonlinear signal processing applications. In this study, we show that an atomically thin (~1.5 nm) indium tin oxide film in the form of an air/indium tin oxide/SiO2 quantum well exhibits a second-order susceptibility χ2 of ~1,800 pm V-1. First-principles calculations and quantum electrostatic modelling point to an electronic interband transition resonance in the asymmetric potential energy of the quantum well as the reason for this large χ2 value. As the χ2 value is more than 20 times higher than that of the traditional nonlinear LiNbO3 crystal, our indium tin oxide quantum well design can be an important step towards nonlinear photonic circuit applications.

Two-Dimensional Molybdenum Boride (MBene) Mo4/3B2Tx with Broadband and Termination-Dependent Ultrafast Nonlinear Optical Response

Two-dimensional molybdenum borides (MBenes) comprise a new class of 2D transition metal borides that exhibit potential photonics applications. Recently, the synthesis of individual single-layer Mo4/3B2Tx (T = O, F, OH) MBene sheets has been realized, which attracted considerable attention in optoelectronics. However, there is still a lack of understanding and regulation of the photophysical processes of Mo4/3B2Tx MBene. Here, we demonstrate that Mo4/3B2Tx MBene exhibits a surface termination-dependent electronic structure, carrier dynamics, and nonlinear optical response over a wide wavelength range (500-1550 nm). As prepared 2D Mo4/3B2F2 MBene possesses a semimetal material property that exhibits a shorter intraband scattering process (<100 ps) and a considerable nonlinear optical response at a broadband cover optical communication C band at 1550 nm. These thrilling results are confirmed theoretically and experimentally. The analysis of these results adds to the regulating and understanding of the basic photophysical processes, which is anticipated to be beneficial for the further design of MBene-based photonics and nanoelectronics devices.

Anisotropic Strain-Tailoring Nonlinear Optical Response in van der Waals NbOI2

Two-dimensional (2D) NbOI2 demonstrates significant second-harmonic generation (SHG) with a high conversion efficiency. To unlock its full potential in practical applications, it is desirable to modulate the SHG behavior while utilizing the intrinsic lattice anisotropy. Here, we demonstrate direction-specific modulation of the SHG response in NbOI2 by applying anisotropic strain with respect to the intrinsic lattice orientations, where more than 2-fold enhancement in the SHG intensity is achieved under strain along the polar axis. The strain-driven SHG evolution is attributed to the strengthened built-in piezoelectric field (polar axis) and the enlarged Peierls distortions (nonpolar axis). Moreover, we provide quantifications of the correlation between strain and SHG intensity in terms of the susceptibility tensor. Our results demonstrate the effective coupling of orientation-specific strain to the anisotropic SHG response through the intrinsic polar order in 2D nonlinear optical crystals, opening a new paradigm toward the development of functional devices.

Hybridization of graphene-gold plasmons for active control of mid-infrared radiation

Many applications in environmental and biological sensing, standoff detection, and astronomy rely on devices that operate in the mid-infrared range, where active devices can play a critical role in advancing discovery and innovation. Nanostructured graphene has been proposed for active miniaturized mid-infrared devices via excitation of tunable surface plasmons, but typically present low efficiencies due to weak coupling with free-space radiation and plasmon damping. Here we present a strategy to enhance the light-graphene coupling efficiency, in which graphene plasmons couple with gold localized plasmons, creating novel hybridized plasmonic modes. We demonstrate a metasurface in which hybrid plasmons are excited with transmission modulation rates of 17% under moderate doping (0.35 eV) and in ambient conditions. We also evaluate the metasurface as a mid-infrared modulator, measuring switching speeds of up to 16 kHz. Finally, we propose a scheme in which we can excite strongly coupled gold-graphene gap plasmons in the thermal radiation range, with applications to nonlinear optics, slow light, and sensing.

Third Harmonic Generation in Thin NbOI2 and TaOI2

The niobium oxide dihalides have recently been identified as a new class of van der Waals materials exhibiting exceptionally large second-order nonlinear optical responses and robust in-plane ferroelectricity. In contrast to second-order nonlinear processes, third-order optical nonlinearities can arise irrespective of whether a crystal lattice is centrosymmetric. Here, we report third harmonic generation (THG) in two-dimensional (2D) transition metal oxide iodides, namely NbOI2 and TaOI2. We observe a comparable THG intensity from both materials. By benchmarking against THG from monolayer WS2, we deduce that the third-order susceptibility is approximately on the same order. THG resonances are revealed at different excitation wavelengths, likely due to enhancement by excitonic states and band edge resonances. The THG intensity increases for material thicknesses up to 30 nm, owing to weak interlayer coupling. After this threshold, it shows saturation or a decrease, due to optical interference effects. Our results establish niobium and tantalum oxide iodides as promising 2D materials for third-order nonlinear optics, with intrinsic in-plane ferroelectricity and thickness-tunable nonlinear efficiency.

Rational Design of Stimuli-Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule-Programmable Nanoelectronics

The ability of electronic devices to act as switches makes digital information processing possible. Succeeding graphene, emerging inorganic 2D materials (i2DMs) have been identified as alternative 2D materials to harbor a variety of active molecular components to move the current silicon-based semiconductor technology forward to a post-Moore era focused on molecule-based information processing components. In this regard, i2DMs benefits are not only for their prominent physiochemical properties (e.g., the existence of bandgap), but also for their high surface-to-volume ratio rich in reactive sites. Nonetheless, since this field is still in an early stage, having knowledge of both i) the different strategies for molecularly functionalizing the current library of i2DMs, and ii) the different types of active molecular components is a sine qua non condition for a rational design of stimuli-responsive i2DMs capable of performing logical operations at the molecular level. Consequently, this Review provides a comprehensive tutorial for covalently anchoring ad hoc molecular components-as active units triggered by different external inputs-onto pivotal i2DMs to assess their role in the expanding field of molecule-programmable nanoelectronics for electrically monitoring bistable molecular switches. Limitations, challenges, and future perspectives of this emerging field which crosses materials chemistry with computation are critically discussed.

Optimization of the cavity length and pulse characterization based on germanene as a saturable absorber in an Er-doped fiber laser

In this study, germanene-nanosheets (NSs) were synthesized by liquid-phase exfoliation, followed by an experimental investigation into the nonlinear saturable absorption characteristics and morphological structure of germanene. The germanene-NSs were employed as saturable absorbers, exhibiting saturation intensity and modulation depth values of 22.64M W/c m 2 and 4.48%, respectively. This demonstrated the feasibility of utilizing germanene-NSs passively mode-locked in an erbium-doped fiber laser (EDFL). By optimizing the cavity length, improvements in the output of EDFL characteristics were achieved, resulting in 883 fs pulses with a maximum average output power of 19.74 mW. The aforementioned experimental outcomes underscore the significant potential of germanene in the realms of ultrafast photonics and nonlinear optics.

Strong non-linear optical response of Sb2Se3 nanorods in a liquid suspension based on spatial self-phase modulation and their all-optical photonic device applications

The field of nonlinear optics is constantly expanding and gaining new impetus through the discovery of fresh nonlinear materials. Herein, for the first time, we have performed spatial self-phase modulation (SSPM) experiments with an emerging anisotropic Sb2Se3 layered material in a liquid suspension for an all-optical diode and all-optical switching application. The third-order broadband nonlinear optical susceptibility (χ(3)single layer ∼ 10-9 esu) and nonlinear refractive index (n2 ∼ 10-6 cm2 W-1) of Sb2Se3 have been determined using a 671 nm laser beam. This result could be unambiguously explained by the anisotropic hole mobility of Sb2Se3. The linear relationship of χ(3) and carrier mobility emphasizes the establishment of nonlocal hole coherence, the origin of the diffraction pattern. Consequently, the time evolution of diffraction rings follows the 'Wind-Chime' model. A novel photonic diode based on Sb2Se3/SnS2 has been demonstrated using the nonreciprocal propagation of light. The self-phase modulation (SPM) technique uses laser lights of different wavelengths and intensities to demonstrate the all-optical logic gates, particularly OR logic gates. The exploration of nonlinear optical phenomena in Sb2Se3 opens up a new realm for optical information processing and communication. We strongly believe that this result will help to underpin the area of optical nonlinearities among its various applications.

A multifunctional optoelectronic device based on 2D material with wide bandgap

Low-dimensional materials exhibit unique quantum confinement effects and morphologies as a result of their nanoscale size in one or more dimensions, making them exhibit distinctive physical properties compared to bulk counterparts. Among all low-dimensional materials, due to their atomic level thickness, two-dimensional materials possess extremely large shape anisotropy and consequently are speculated to have large optically anisotropic absorption. In this work, we demonstrate an optoelectronic device based on the combination of two-dimensional material and carbon dot with wide bandgap. High-efficient luminescence of carbon dot and extremely large shape anisotropy (>1500) of two-dimensional material with the wide bandgap of >4 eV cooperatively endow the optoelectronic device with multi-functions of optically anisotropic blue-light emission, visible light modulation, wavelength-dependent ultraviolet-light detection as well as blue fluorescent film assemble. This research opens new avenues for constructing multi-function-integrated optoelectronic devices via the combination of nanomaterials with different dimensions.

Structural and Electronic Properties of Two-Dimensional Materials: A Machine-Learning-Guided Prediction

The growing number of studies and interest in two-dimensional (2D) materials has not yet resulted in a wide range of material applications. This is a result of difficulties in getting the properties, which are often determined through numerical experiments or through first-principles predictions, both of which require lots of time and resources. Here we provide a general machine learning (ML) model that works incredibly well as a predictor for a variety of electronic and structural properties such as band gap, fermi level, work function, total energy and area of unit cell for a wide range of 2D materials derived from the Computational 2D Materials Database (C2DB). Our predicted model for classification of samples works extraordinarily well and gives an accuracy of around 99 %. We are able to successfully decrease the number of studied features by employing a strict permutation-based feature selection method along with the sure independence screening and sparsifying operator (SISSO), which further supports the design recommendations for the identification of novel 2D materials with the desired properties.

All optical modulation in vertically coupled indium tin oxide ring resonator employing epsilon near zero state

We present an innovative approach to achieve all-optical modulation within an ITO-based vertically coupled ring resonator. This method leverages the material's enhanced nonlinear response in the near-infrared wavelengths, particularly within the epsilon-near-zero (ENZ) state. To enhance the interaction between light and the material while minimizing scattering losses, our approach employs an ITO-based vertically connected ring resonator. The vertical arrangement eliminates the need for etching fine gaps to separate the ring and bus waveguide. The novel waveguide design addresses the necessity of high sensitivity, non-linear effects and compact size opening the possibilities for all-optical signal processing. This unique resonator structure effectively facilitates the coupling of a high-intensity pump wavelength into the ITO-based micro-ring resonator. Consequently, this optical pumping induces electron heating within the ITO material, leading to a significant increase in its nonlinear optical properties. This, in turn, results in a noteworthy alteration of ITO's refractive index, specifically in the unity order, thereby modifying the complex effective index of the optical beam propagating at 1550 nm. Our experimental findings demonstrate an impressive extinction ratio of 18 dB for a 30 µm long device, which highlights the efficiency of our approach in achieving all-optical modulation through the optical pumping of an ITO-based vertically coupled ring resonator. The proposed all-optical modulator has outperformed as compared to conventional waveguide-based modulators in terms of extinction ratio and footprint. This novel technique holds immense potential for advancing high-speed data communication systems in the future. As the demand for advanced processing capabilities, such as artificial intelligence, continues to grow, all-optical modulation emerges as a groundbreaking technology poised to revolutionize the next generation of computing and communication systems.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Nonlinear Optical Properties from Engineered 2D Materials

Two-dimensional (2D) materials with atomic thickness, tunable light-matter interaction, and significant nonlinear susceptibility are emerging as potential candidates for new-generation optoelectronic devices. In this review, we briefly cover the recent research development of typical nonlinear optic (NLO) processes including second harmonic generation (SHG), third harmonic generation (THG), as well as two-photon photoluminescence (2PPL) of 2D materials. Nonlinear light-matter interaction in atomically thin 2D materials is important for both fundamental research and future optoelectronic devices. The NLO performance of 2D materials can be greatly modulated with methods such as carrier injection tuning, strain tuning, artificially stacking, as well as plasmonic resonant enhancement. This review will discuss various nonlinear optical processes and corresponding tuning methods and propose its potential NLO application of 2D materials.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices

The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.

The Atomic Drill Bit: Precision Controlled Atomic Fabrication of 2D Materials

The ability to deterministically fabricate nanoscale architectures with atomic precision is the central goal of nanotechnology, whereby highly localized changes in the atomic structure can be exploited to control device properties at their fundamental physical limit. Here, an automated, feedback-controlled atomic fabrication method is reported and the formation of 1D-2D heterostructures in MoS₂ is demonstrated through selective transformations along specific crystallographic orientations. The atomic-scale probe of an aberration-corrected scanning transmission electron microscope (STEM) is used, and the shape and symmetry of the scan pathway relative to the sample orientation are controlled. The focused and shaped electron beam is used to reliably create Mo₆ S₆ nanowire (MoS-NW) terminated metallic-semiconductor 1D-2D edge structures within a pristine MoS₂ monolayer with atomic precision. From these results, it is found that a triangular beam path aligned along the zig-zag sulfur terminated (ZZS) direction forms stable MoS-NW edge structures with the highest degree of fidelity without resulting in disordering of the surrounding MoS₂ monolayer. Density functional theory (DFT) calculations and ab initio molecular dynamic simulations (AIMD) are used to calculate the energetic barriers for the most stable atomic edge structures and atomic transformation pathways. These discoveries provide an automated method to improve understanding of atomic-scale transformations while opening a pathway toward more precise atomic-scale engineering of materials.

Low-Threshold, Multiple High-Order Harmonics Fiber Laser Employing Cr2Si2Te6 Saturable Absorber

Abundant research findings have proved the value of two-dimensional (2D) materials in the study of nonlinear optics in fiber lasers. However, there remains two problems: how to reduce the start-up threshold, and how to improve the damage threshold, of fiber lasers based on 2D materials. A 15.1 mW low-threshold mode-locked fiber laser, based on a Cr₂Si₂Te₆ saturable absorber (SA) prepared by the liquid-phase exfoliation method, is demonstrated successfully in this work. This provides a useful and economical method to produce SAs with low insertion loss and low saturation intensity. Besides, multiple high-order harmonics, from the fundamental frequency (12.6 MHz) to the 49th-order harmonic (617.6 MHz), mode-locked operations are recorded. The experimental results indicate the excellent potential of Cr₂Si₂Te₆ as an optical modulator in exploring the soliton dynamics, harmonic mode locking, and other nonlinear effects in fiber lasers.

A New, Thorough Look on Unusual and Neglected Group III-VI Compounds Toward Novel Perusals

The attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices, among which a great deal is offered from layered structures. Studies on aluminium chalcogenides show interesting potential as anodes in batteries and as semiconductors. Thallium (Tl), which is commonly present in the +1 oxidation state, is one of the key components in ternary chalcogenides. However, binary Tl-Q (Q = S, Se, Te) systems and derived films are still studied for their semiconducting and thermoelectric properties. This review aims to summarize the biggest features of these unusual materials and to shed some new light on them with the perspective that in the future, novel studies can revive these compounds in order to give rise to a new generation of technology.

Polarization-sensitive multi-frequency switches and high-performance slow light based on quadruple plasmon-induced transparency in a patterned graphene-based terahertz metamaterial

A periodic patterned graphene-based terahertz metamaterial comprising three transverse graphene strips and one longitudinal continuous graphene ribbon is proposed to achieve a dynamically tunable quadruple plasmon-induced transparency (PIT) effect. Further analysis of the magnetic field distribution along the x-direction shows that the quadruple-PIT window can be produced by the strong destructive interference between the bright mode and the dark mode. The spectral response characteristics of the quadruple-PIT effect are numerically and theoretically investigated, and the results obtained by the finite-difference time-domain (FDTD) simulation fit well with that by the coupled mode theory (CMT) calculation. In addition, two hepta-frequency asynchronous switches are achieved by tuning the Fermi energy of the graphene, and their maximum modulation depths are 98.9% and 99.7%, corresponding to the insertion losses of 0.173 dB and 0.334 dB, respectively. Further studies show that polarization light has a significant impact on the quadruple-PIT, resulting in a polarization-sensitive switch being realized with a maximum modulation depth of 99.7% and a minimum insertion loss of 0.048 dB. In addition, when the Fermi energy is equal to 1.2 eV, the maximum time delay and group refractive index of the quadruple-PIT can be respectively as high as 1.065 ps and 3194, and the maximum delay-bandwidth product reaches 1.098, which means that excellent optical storage is achieved. Thus, our proposed quadruple-PIT system can be used to design a terahertz multi-channel switch and optical storage.

Interfacial engineering of halide perovskites and two-dimensional materials

Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.

Multi-Pulse Bound Soliton Fiber Laser Based on MoTe2 Saturable Absorber

Bound solitons have become a hot topic in the field of nonlinear optics due to their potential applications in optical communication, information processing and radar systems. However, the trapping of the cascaded bound soliton is still a major challenge up to now. Here, we propose and experimentally demonstrate a multi-pulse bound soliton fiber laser based on MoTe₂ saturable absorber. In the experiment, MoTe₂ nanosheets were synthesized by chemical vapor deposition and transferred to the fiber taper by optical deposition. Then, by inserting the MoTe₂ saturable absorber into a ring cavity laser, the two-pulse, three-pulse and four-pulse bound solitons can be stably generated by properly adjusting the pump strength and polarization state. These cascaded bound solitons are expected to be applied to all-optical communication and bring new ideas to the study of soliton lasers.

The Road for 2D Semiconductors in the Silicon Age

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

Continuous Color-Tunable Light-Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys

The diverse series of transition metal dichalcogenide (TMDC) materials has been employed in various optoelectronic applications, such as photodetectors, light-emitting diodes, and lasers. Typically, the detection or emission range of optoelectronic devices is unique to the bandgap of the active material. Therefore, to improve the capability of these devices, extensive efforts have been devoted to tune the bandgap, such as gating, strain, and dielectric engineering. However, the controllability of these methods is severely limited (typically ≈0.1 eV). In contrast, alloying TMDCs is an effective approach that yields a composition-dependent bandgap and enables light emissions over a wide range. In this study, a color-tunable light-emitting device using compositionally graded TMDC alloys is fabricated. The monolayer WS₂ /WSe₂ alloy grown by chemical vapor deposition shows a spatial gradient in the light-emission energy, which varies from 2.1 to 1.7 eV. This alloy is incorporated in an electrolyte-based light-emitting device structure that can tune the recombination zone laterally. Thus, a continuous and reversible color-tunable light-emitting device is successfully fabricated by controlling the light-emitting positions. The results provide a new approach for exploring monolayer semiconductor-based broadband optical applications.

Visible optical nonlinearity of vanadium dioxide dispersions

Vanadium dioxide (VO₂), a correlated oxide compound, is one of the functional materials extensively studied in solid state physics due to its attractive physical properties. However, the nonlinear optical response of VO₂ and related all-optical applications have been paid less attention. Here, the nonlinear refractive index (n ₂) and third-order nonlinear susceptibility (χ ⁽³⁾) of VO₂ dispersions have been acquired to be 3.06 × 10^-6 cm² W^-1 and 1.68 × 10^-4 esu at a wavelength of 671 nm, and 5.17 × 10^-6 cm² W^-1 and 2.83 × 10^-4 esu at a wavelength of 532 nm via the spatial self-phase modulation (SSPM) and spatial cross-phase modulation (SXPM) effects in the visible regime, respectively. Based on the excellent nonlinear optical properties of VO₂ dispersions, the proof-of-principle functions such as optical logic or-gates, all-optical switches, and inter-channel information transfer are implemented in the visible wavelength. The experimental results on the response time of VO₂ to light indicate that the formation of diffraction rings is mainly an electronically coherent third-order nonlinear optical process. The experimental results show that the VO₂ dispersions exhibit an excellent nonlinear optical response and may lay the foundation for the application of VO₂-based all-optical devices.

High Entropy van der Waals Materials

By breaking the restrictions on traditional alloying strategy, the high entropy concept has promoted the exploration of the central area of phase space, thus broadening the horizon of alloy exploitation. This review highlights the marriage of the high entropy concept and van der Waals systems to form a new family of materials category, namely the high entropy van der Waals materials (HEX, HE = high entropy, X = anion clusters) and describes the current issues and next challenges. The design strategy for HEX has integrated the local feature (e.g., composition, spin, and valence states) of structural units in high entropy materials and the holistic degrees of freedom (e.g., stacking, twisting, and intercalating species) in van der Waals materials, and is successfully used for the discovery of high entropy dichalcogenides, phosphorus tri-chalcogenides, halogens, and MXene. The rich combination and random distribution of the multiple metallic constituents on the nearly regular 2D lattice give rise to a flexible platform to study the correlation features behind a range of selected physical properties, e.g., superconductivity, magnetism, and metal-insulator transition. The deliberate design of structural units and their stacking configuration can also create novel catalysts to enhance their performance in a bunch of chemical reactions.

Bloch surface waves assisted active modulation of graphene electro-absorption in a wide near-infrared region

Light modulation has been recognized as one of the most fundamental operations in photonics. In this paper, we theoretically designed a Bloch surface wave assisted modulator for the active modulation of graphene electro-absorption. Simulations show that the strong localized electrical field generated by Bloch surface waves can significantly enhance the graphene electro-absorption up to 99.64%. Then by gate-tuning the graphene Fermi energy to transform graphene between a lossy and a lossless material, electrically switched absorption of graphene with maximum modulation depth of 97.91% can be achieved. Meanwhile, by further adjusting the incident angle to tune the resonant wavelength of Bloch surface waves, the center wavelength of the modulator can be actively controlled. This allows us to realize the active modulation of graphene electro-absorption within a wide near-infrared region, including the commercially important telecommunication wavelength of 1550 nm, indicating the excellent performance of the designed modulator via such mechanism. Such Bloch surface waves assisted wavelength-tunable graphene electro-absorption modulation strategy opens up a new avenue to design graphene-based selective multichannel modulators, which is unavailable in previous reported strategies that can be only realized by passively changing the structural parameters.

Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device

Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition, the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.

High-speed and high-contrast two-channel all-optical modulator based on solution-processed CdSe/ZnS quantum dots

Recently, all-optical modulators are potentially the most promising candidate to achieve high-bit rate modulation in high-speed all-optical communication technologies and signal processing. In this study, a two-channel all-optical modulator based on a solution-processed quantum dot structure is introduced for two sizes of quantum dots to operate at two wavelengths of MIR spectra (3 µm and 5 µm). To perform numerical and theoretical analysis and evaluate the optical behavior of the proposed all-optical modulator, the coupled rate and propagation equations have been solved by considering homogeneous and inhomogeneous broadening effects. The modulation depth at the 50 GHz frequency and 3 mW probe power is attained, about 94% for channel-1 with the wavelength of 559 nm at 300 Wcm⁻² pump power density as well as approximately 83.5% for channel-2 with the wavelength of 619 nm at 500 Wcm⁻² pump power density. The introduced two-channel all-optical modulator can operate simultaneously at two wavelengths during the modulation process in which information could be transmitted through both signals from the control light. This approach can present the practical device as a high-contrast and high-speed two-channel all-optical modulator with a high modulation depth in numerous applications such as thermal imaging in night vision cameras, wavelength de-multiplexing, signal processing, free-space communication.

2D Monolayers for Superior Transparent Electromagnetic Interference Shielding

With countless modern technologies utilizing wireless communication, materials that can selectively allow transmission of visible light and prevent transmission of low frequency GHz electromagnetic interference (EMI) are needed. Recently, 2D materials such as graphene, transition metal dichalcogenides, and MXenes have shown promise for such applications. Despite the rapid advances, little progress has been made in identifying 2D monolayers with intrinsically higher visible transmittance (T_vis) and shielding effectiveness (SE). With endless variations in structure and composition, the 2D materials space is too large for systematic experimental investigation. To tackle this challenge, we perform a high-throughput computational screening. Using an atomistic first-principles method, we simultaneously calculate T_vis and SE of 7000 2D monolayer materials. We identify 26 monolayer materials with excellent properties of >98% T_vis and >5 dB SE (∼70% EMI attenuation). The top candidate, an AgSe₂ monolayer with predicted 98.53% T_vis and 12.53 dB SE (∼94% EMI attenuation), is a significant improvement over the state-of-the-art, graphene, with 96.7% T_vis and 3.04 dB SE (∼40% EMI attenuation). Additionally, we gain physical insights into the transparent EMI shielding performance of 2D monolayers and their electronic structure, elucidating the role of surface terminations and nearly free electron states.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics

The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP. Nevertheless, photonics research on the BP/InSe heterostructure was insufficient, while both components are considered promising in the field. In this work, a two-dimensional (2D) BP/InSe heterostructure was fabricated using the liquid-phase exfoliation method. Its linear and non-linear optical (NLO) absorption was characterized by ultraviolet−visible−infrared and Open-aperture Z-scan technology. On account of the revealed superior NLO properties, an SA based on 2D BP/InSe was prepared and embedded into an erbium-doped fiber laser, traditional soliton pulses were observed at 1.5 μm with the pulse duration of 881 fs. Furthermore, harmonic mode locking of bound solitons and dark-bright soliton pairs were also obtained in the same laser cavity due to the cross-coupling effect. The stable mode-locked operation can be maintained for several days, which overcome the low air stability of BP. This contribution further proves the excellent optical properties of 2D BP/InSe heterostructure and provides new probability of developing nano-photonics devices for the applications of double pulses laser source and long-distance information transmission.

Development of polarization modulator using MXene thin film

In this work, polarization modulator utilizing MXene material, namely Nb₂C is demonstrated. S band signal is injected into Nb₂C thin film and is modulated by 1400 nm laser diode. A total of 39.81° of polarization rotation is attained when the pump power is increased to 223 mW. The rotation of light is due to thermo-optic effect. The efficiency of polarization modulator is calculated at 0.1974°/mW.

High Modulation Depth Enabled by Mo2Ti2C3Tx MXene for Q-Switched Pulse Generation in a Mid-Infrared Fiber Laser

Two-dimensional (2D) materials show great promise as saturable absorbers (SAs) for ultrafast fiber lasers. However, the relatively low modulation depth and poor stability of some 2D materials, such as graphene and black phosphorus, restrict their applications in the mid-infrared pulse generation. Herein, we first report a novel 2D double transition metal carbide, denoted as Mo₂Ti₂C₃T_x MXene, as the saturable absorber (SA) for a passively Q-switched mid-infrared fiber laser. Due to the unique four-metal atomic layer structure, the Mo₂Ti₂C₃T_x exhibits superior saturable absorption properties, particularly with a higher modulation depth (40% at 2796 nm) than most of the other reported 2D SA materials. After incorporating the MXene SA with an erbium-doped fiber system, the passively Q-switched pulses were achieved with a repetition rate of 157.3 kHz, the shortest pulse width of 370 ns, and single-pulse energy of 1.92 μJ, respectively. Such results extend the MXene-based SAs as promising candidates for advanced photonic devices.

2D Functional Minerals as Sustainable Materials for Magneto-Optics

Liquid crystal devices using organic molecules are nowadays widely used to modulate transmitted light, but this technology still suffers from relatively weak response, high cost, toxicity and environmental concerns, and cannot fully meet the demand of future sustainable society. Here, an alternative approach to color-tunable optical devices, which is based on sustainable inorganic liquid crystals derived from 2D mineral materials abundant in nature, is described. The prototypical 2D mineral of vermiculite is massively produced by a green method, possessing size-to-thickness aspect ratios of >10³ , in-plane magnetization of >10 emu g^-1 , and an optical bandgap of >3 eV. These characteristics endow 2D vermiculite with sensitive magneto-birefringence response, been several orders of magnitude larger than organic counterparts, as well as capability of broad-spectrum modulation. The finding consequently permits the fabrication of various magnetochromic or mechanochromic devices with low or even zero-energy consumption during operation. This work creates opportunities for the application of sustainable materials in advanced optics.

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

Sliding Modulation in Nonlinear Optical Effect in Two-Dimensional van der Waals Cu2MoS4

Owing to different nonlinear optical (NLO) motifs with diverse structural and symmetrical assemblies, two-dimensional (2D) van der Waals (vdW) transition metal ternary chalcogenides (TMTCs) have unique advantages in nano-NLO modulation compared to 2D vdW transition metal dichalcogenides (e.g., MoS₂). Based on first-principles calculations, in this study, we discover that layered Cu₂MoS₄ with two tetrahedral [MoS₄] and [CuS₄] motifs, as a representative 2D vdW TMTC, has an extremely rare sliding-modulated second harmonic effect with nearly 70% fluctuation, much larger than 5% in MoS₂ with a single octahedral [MoS₆] motif because of different synergistic effects among intra- and interlayer NLO polarizations induced by the [CuS₄] and [MoS₄] NLO-active motifs. Furthermore, the Cu₂MoS₄ layers exhibit a low energy barrier in interlayer sliding with a robust SHG response against large strains, displaying a novel and applicable NLO-modulation mechanism in nano-optoelectronics.

SnSe-Coated Microfiber Resonator for All-Optical Modulation

In this study, a tin monoselenide (SnSe)-based all-optical modulator is firstly demonstrated with high tuning efficiency, broad bandwidth, and fast response time. The SnSe nanoplates are deposited in the microfiber knot resonator (MKR) on MgF₂ substrate and change its transmission spectra by the external laser irradiation. The SnSe nanoplates and the microfiber are fabricated using the liquid-phase exfoliation method and the heat-flame taper-drawing method, respectively. Due to the strong absorption and enhanced light–matter interaction of the SnSe nanoplates, the largest transmitted power tunability is approximately 0.29 dB/mW with the response time of less than 2 ms. The broad tuning bandwidth is confirmed by four external pump lights ranging from ultraviolet to near-infrared. The proposed SnSe-coated microfiber resonator holds promising potential for wide application in the fields of all-optical tuning and fiber sensors.

Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe2

Optical modulation on ultrashort time scales is both of central importance and an essential operation for applications in photonics and optoelectronics. Here, with a giant bandgap renormalization due to a high density of carrier injected by a femtosecond pulse, we realize an expected broadband saturable absorption in chemical vapor deposition grown monolayer transition-metal dichalcogenide MoSe₂. Our findings reveal the band edge shift from ∼1.53 to ∼0.52 eV under the pump excitation of 0.80 eV, which is induced by the nonequilibrium occupation of electron-hole states after a Mott transition as well as the increase of carrier temperature.

Accurate Local Modulation of Graphene Terahertz Metamaterials by Direct Electron Beam Irradiation

Electrical gating has been typically used for Graphene-based devices to deliver high performance with superior electrical controllability. In this study, we utilize direct electron beam irradiation to attain the electrical controllability of graphene. The newly established system combines terahertz time-domain spectroscopy (TDS) with scanning electron microscopy (SEM). We experimentally demonstrate the precise localized tuning of graphene terahertz metamaterials, as the size and position of the electron beam generated by SEM are highly controllable. Furthermore, graphene metamaterials with different chemical potentials are simulated, and the results are highly consistent with the experiments.

Recent progress on transition metal diselenides from formation and modification to applications

The development of graphene promotes the research of similar two-dimensional (2D) materials, especially 2D transition metal dichalcogenides (TMDCs) with semiconductor properties. Monolayer or few-layer TMDCs have several advantages, such as direct band gap, weak interlayer van der Waals force, large interlayer spacing, and abundant marginal active sites, which make them widely used in catalysis, optoelectronics, as well as energy conversion and storage devices. In addition, transition metal diselenides (TMDSs) also possess many intriguing characteristics. For instance, transition metal diselenides (e.g., MoSe₂) have a more stable 1T phase, larger interlayer spacing, smaller band gap, and more obvious metallic property of Se than TMDCs (e.g., MoS₂). Thus, it has become one of the most attractive research topics branching out from TMDCs. Herein, this review unveils the structures, synthesis, properties, modifications, applications, and perspectives for TMDSs.

All-Optical Modulation Technology Based on 2D Layered Materials

In the advancement of photonics technologies, all-optical systems are highly demanded in ultrafast photonics, signal processing, optical sensing and optical communication systems. All-optical devices are the core elements to realize the next generation of photonics integration system and optical interconnection. Thus, the exploration of new optoelectronics materials that exhibit different optical properties is a highlighted research direction. The emerging two-dimensional (2D) materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs) and MXene have proved great potential in the evolution of photonics technologies. The optical properties of 2D materials comprising the energy bandgap, third-order nonlinearity, nonlinear absorption and thermo-optics coefficient can be tailored for different optical applications. Over the past decade, the explorations of 2D materials in photonics applications have extended to all-optical modulators, all-optical switches, an all-optical wavelength converter, covering the visible, near-infrared and Terahertz wavelength range. Herein, we review different types of 2D materials, their fabrication processes and optical properties. In addition, we also summarize the recent advances of all-optical modulation based on 2D materials. Finally, we conclude on the perspectives on and challenges of the future development of the 2D material-based all-optical devices.

Highly-tunable ferromagnetism in Cr-doped layered van der Waals NiTe2 crystals with high air stability

In the present work, tunable ferromagnetism can be introduced in NiTe2 crystals by Cr doping with high air-stability.