Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p-Type Doping Method

Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here we report the electrophilic trifluoromethylation of 2D WSe2 and MoS2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe2. This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.

Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

Vanadium is a critical raw material. In the nearby future, it may, however, become one of the key elements of computer devices based on two-dimensional arrays of spin qubits for quantum information processing or charge- and resistance-based data memory cells for non-volatile in-memory and neuromorphic computing. The research and development (R&D) of vanadium-containing electronic materials and methods for their responsible fabrication underpins the transition to innovative hybrid semiconductors for energy- and resource-efficient memory and information processing technologies. The combination of standard and emerging solid-state semiconductors with stimuli-responsive oxo complexes of vanadium(IV,V) is envisioned to result in electronics with a new room-temperature device nanophysics, and the ability to modulate and control it at the sub-nanometer level. The development of exponential (Boolean) logics based on the oxovanadium-comprising circuitry and crossbar arrays of individual memristive cells for in-memory computing, the implementation of basic synaptic functions via dynamic electrical pulses for neuromorphic computing, and the readout and control of spin networks and interfaces for quantum computing are strategically important future areas of molecular chemistry and applied physics of vanadium.

Atomic Force Microscopy beyond Topography: Chemical Sensing of 2D Material Surfaces through Adhesion Measurements

Developing new functionalities of two-dimensional materials (2Dms) can be achieved by their chemical modification with a broad spectrum of molecules. This functionalization is commonly studied by using spectroscopies such as Raman, IR, or XPS, but the detection limit is a common problem. In addition, these methods lack detailed spatial resolution and cannot provide information about the homogeneity of the coating. Atomic force microscopy (AFM), on the other hand, allows the study of 2Dms on the nanoscale with excellent lateral resolution. AFM has been extensively used for topographic analysis; however, it is also a powerful tool for evaluating other properties far beyond topography such as mechanical ones. Therefore, herein, we show how AFM adhesion mapping of transition metal chalcogenide 2Dms (i.e., MnPS3 and MoS2) permits a close inspection of the surface chemical properties. Moreover, the analysis of adhesion as relative values allows a simple and robust strategy to distinguish between bare and functionalized layers and significantly improves the reproducibility between measurements. Remarkably, it is also confirmed by statistical analysis that adhesion values do not depend on the thickness of the layers, proving that they are related only to the most superficial part of the materials. In addition, we have implemented an unsupervised classification method using k-means clustering, an artificial intelligence-based algorithm, to automatically classify samples based on adhesion values. These results demonstrate the potential of simple adhesion AFM measurements to inspect the chemical nature of 2Dms and may have implications for the broad scientific community working in the field.

Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics

Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is formed due to the metal-induced gap states (MIGS), which greatly hinder the development of 2D semiconductor transistors in large-scale integrated circuits. Meanwhile, most air-stable 2D semiconductors are nonmagnetic, limiting the possibility of spintronic application. Here, we report a new strategy to suppress the MIGS and reduce the Schottky barrier height on 2D semiconductors (MoS2, WS2, and WSe2) by using lanthanide metal (Sm and Gd) contacts. It was found the lanthanide contacts exhibit a good Ohmic property with a near-zero Schottky barrier. As a result, the carrier mobility of MoS2 transistors reaches 118 cm2/(V s). Furthermore, Gd-contact MoS2 transistors show the typical magnetic property where the magnetoresistance reaches 2.7% at 5 K. By studying its spin valve effect, it was demonstrated that the nonlocal magnetoresistance is 4.1% and spin polarization is 3.25%. This study provides a promising pathway for high-performance 2D electronic and spintronics, which may open a new strategy for future computing-in-memory architecture.

Rational Design of Stimuli-Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule-Programmable Nanoelectronics

The ability of electronic devices to act as switches makes digital information processing possible. Succeeding graphene, emerging inorganic 2D materials (i2DMs) have been identified as alternative 2D materials to harbor a variety of active molecular components to move the current silicon-based semiconductor technology forward to a post-Moore era focused on molecule-based information processing components. In this regard, i2DMs benefits are not only for their prominent physiochemical properties (e.g., the existence of bandgap), but also for their high surface-to-volume ratio rich in reactive sites. Nonetheless, since this field is still in an early stage, having knowledge of both i) the different strategies for molecularly functionalizing the current library of i2DMs, and ii) the different types of active molecular components is a sine qua non condition for a rational design of stimuli-responsive i2DMs capable of performing logical operations at the molecular level. Consequently, this Review provides a comprehensive tutorial for covalently anchoring ad hoc molecular components-as active units triggered by different external inputs-onto pivotal i2DMs to assess their role in the expanding field of molecule-programmable nanoelectronics for electrically monitoring bistable molecular switches. Limitations, challenges, and future perspectives of this emerging field which crosses materials chemistry with computation are critically discussed.

Opto-Electrochemical Synaptic Memory in Supramolecularly Engineered Janus 2D MoS2

Artificial synapses combining multiple yet independent signal processing strategies in a single device are key enabler to achieve high-density of integration, energy efficiency, and fast data manipulation in brain-like computing. By taming functional complexity, the use of hybrids comprising multiple materials as active components in synaptic devices represents a powerful route to encode both short-term potentiation (STP) and long-term potentiation (LTP) in synaptic circuitries. To meet such a grand challenge, herein a novel Janus 2D material is developed by dressing asymmetrically the two surfaces of 2D molybdenum disulfide (MoS2 ) with an electrochemically-switchable ferrocene (Fc)/ ferrocenium (Fc+ ) redox couple and an optically-responsive photochromic azobenzene (Azo). Upon varying the magnitude of the electrochemical stimulus, it is possible to steer the transition between STP and LTP, thereby either triggering electrochemical doping of Fc/Fc+  pair on MoS2  or controlling an adsorption/desorption process of such redox species on MoS2 . In addition, a lower magnitude LTP is recorded by activating the photoisomerization of azobenzene chemisorbed molecules and therefore modulating the dipole-induced doping of the 2D semiconductor. Significantly, the interplay of electrochemical and optical stimuli makes it possible to construct artificial synapses where LTP can be boosted to 4-bit (16 memory states) while simultaneously functioning as STP.

Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices

Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.

Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation

Mechanical exfoliation methods of two-dimensional materials have been an essential process for advanced devices and fundamental sciences. However, the exfoliation method usually generates various thick flakes, and a bunch of thick bulk flakes usually covers an entire substrate. Here, we developed a method to selectively isolate mono- to quadlayers of transition metal dichalcogenides (TMDCs) by sonication in organic solvents. The analysis reveals the importance of low interface energies between solvents and TMDCs, leading to the effective removal of bulk flakes under sonication. Importantly, a monolayer adjacent to bulk flakes shows cleavage at the interface, and the monolayer can be selectively isolated on the substrate. This approach can extend to preparing a monolayer device with crowded 17 electrode fingers surrounding the monolayer and for the measurement of electrostatic device performance.

Enhancing the Carrier Transport in Monolayer MoS2 through Interlayer Coupling with 2D Covalent Organic Frameworks

The coupling of different 2D materials (2DMs) to form van der Waals heterostructures (vdWHs) is a powerful strategy for adjusting the electronic properties of 2D semiconductors, for applications in opto-electronics and quantum computing. 2D molybdenum disulfide (MoS2 ) represents an archetypical semiconducting, monolayer thick versatile platform for the generation of hybrid vdWH with tunable charge transport characteristics through its interfacing with molecules and assemblies thereof. However, the physisorption of (macro)molecules on 2D MoS2 yields hybrids possessing a limited thermal stability, thereby jeopardizing their technological applications. Herein, the rational design and optimized synthesis of 2D covalent organic frameworks (2D-COFs) for the generation of MoS2 /2D-COF vdWHs exhibiting strong interlayer coupling effects are reported. The high crystallinity of the 2D-COF films makes it possible to engineer an ultrastable periodic doping effect on MoS2 , boosting devices' field-effect mobility at room temperature. Such a performance increase can be attributed to the synergistic effect of the efficient interfacial electron transfer process and the pronounced suppression of MoS2 's lattice vibration. This proof-of-concept work validates an unprecedented approach for the efficient modulation of the electronic properties of 2D transition metal dichalcogenides toward high-performance (opto)electronics for CMOS digital circuits.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures

The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.

Isomer Discrimination via Defect Engineering in Monolayer MoS2

The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.

Patching sulfur vacancies: A versatile approach for achieving ultrasensitive gas sensors based on transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) garner significant attention for their potential to create high-performance gas sensors. Despite their favorable properties such as tunable bandgap, high carrier mobility, and large surface-to-volume ratio, the performance of TMDCs devices is compromised by sulfur vacancies, which reduce carrier mobility. To mitigate this issue, we propose a simple and universal approach for patching sulfur vacancies, wherein thiol groups are inserted to repair sulfur vacancies. The sulfur vacancy patching (SVP) approach is applied to fabricate a MoS₂-based gas sensor using mechanical exfoliation and all-dry transfer methods, and the resulting 4-nitrothiophenol (4NTP) repaired molybdenum disulfide (4NTP-MoS₂) is prepared via a sample solution process. Our results show that 4NTP-MoS₂ exhibits higher response (increased by 200 %) to ppb-level NO₂ with shorter response/recovery times (61/82 s) and better selectivity at 25 °C compared to pristine MoS₂. Notably, the limit of detection (LOD) toward NO₂ of 4NTP-MoS₂ is 10 ppb. Kelvin probe force microscopy (KPFM) and density functional theory (DFT) reveal that the improved gas sensing performance is mainly attributed to the 4NTP-induced n-doping effect on MoS₂ and the corresponding increment of surface absorption energy to NO₂. Additionally, our 4NTP-induced SVP approach is universal for enhancing gas sensing properties of other TMDCs, such as MoSe₂, WS₂, and WSe₂.

Interface contact and modulated electronic properties by in-plain strains in a graphene-MoS2 heterostructure

Designing a specific heterojunction by assembling suitable two-dimensional (2D) semiconductors has shown significant potential in next-generation micro-nano electronic devices. In this paper, we study the structural and electronic properties of graphene-MoS₂ (Gr-MoS₂) heterostructures with in-plain biaxial strain using density functional theory. It is found that the interaction between graphene and monolayer MoS₂ is characterized by a weak van der Waals interlayer coupling with the stable layer spacing of 3.39 Å and binding energy of 0.35 J m^-2. In the presence of MoS₂, the linear bands on the Dirac cone of graphene are slightly split. A tiny band gap about 1.2 meV opens in the Gr-MoS₂ heterojunction due to the breaking of sublattice symmetry, and it could be effectively modulated by strain. Furthermore, an n-type Schottky contact is formed at the Gr-MoS₂ interface with a Schottky barrier height of 0.33 eV, which can be effectively modulated by in-plane strain. Especially, an n-type ohmic contact is obtained when 6% tensile strain is imposed. The appearance of the non-zero band gap in graphene has opened up new possibilities for its application and the ohmic contact predicts the Gr-MoS₂ van der Waals heterojunction nanocomposite as a competitive candidate in next-generation optoelectronics and Schottky devices.

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

A "Click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance

Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the post-Moore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semiconductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS₂, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 °C) and it is compatible with micro/nano processing technology. The contact resistance of MoS₂ FETs can be greatly reduced by ∼12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS₂ FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Electroactive Covalent Organic Framework Enabling Photostimulus-Responsive Devices

Two-dimensional covalent organic frameworks (2D COFs) feature graphene-type 2D layered sheets but with a tunable structure, electroactivity, and high porosity. If these traits are well-combined, then 2D COFs can be applied in electronics to realize functions with a high degree of complexity. Here, a highly crystalline electroactive COF, BDFamide-Tp, was designed and synthesized. It shows regularly distributed pores with a width of 1.35 nm. Smooth and successive films of such a COF were fabricated and found to be able to increase the conductivity of an organic semiconductor by 10³ by interfacial doping. Upon encapsulation of a photoswitchable molecule (spiropyran) into the voids of the COF layer, the resulted devices respond differently to light of different wavelengths. Specifically, the current output ratio after UV vs Vis illumination reaches 100 times, thus effectively creating on and off states. The respective positive and negative feedbacks are memorized by the device and can be reprogrammed by UV/Vis illumination. The reversible photostimulus responsivity and reliable memory of the device are derived from the combination of electroactivity and porosity of the 2D COF. This work shows the capability of 2D COFs in higher-level electronic functions and extends their possible applications in information storage.

MoS2 Defect Healing for High-Performance Chemical Sensing of Polycyclic Aromatic Hydrocarbons

The increasing population and industrial development are responsible for environmental pollution. Among toxic chemicals, polycyclic aromatic hydrocarbons (PAHs) are highly carcinogenic contaminants resulting from the incomplete combustion of organic materials. Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), are ideal sensory scaffolds, combining high surface-to-volume ratio with physical and chemical properties that are strongly susceptible to environmental changes. TMDCs can be integrated in field-effect transistors (FETs), which can operate as high-performance chemical detectors of (non)covalent interaction with small molecules. Here, we have developed MoS₂-based FETs as platforms for PAHs sensing, relying on the affinity of the planar polyaromatic molecules for the basal plane of MoS₂ and the structural defects in its lattice. X-ray photoelectron spectroscopy analysis, photoluminescence measurements, and transfer characteristics showed a notable reduction in the defectiveness of MoS₂ and a p-type doping upon exposure to PAHs solutions, with a magnitude determined by the correlation between the ionization energies (E_I) of the PAH and that of MoS₂. Naphthalene, endowed with the higher E_I among the studied PAHs, exhibited the highest output. We observed a log-log correlation between MoS₂ doping and naphthalene concentration in water in a wide range (10^-9-10^-6 M), as well as a reversible response to the analyte. Naphthalene concentrations as low as 0.128 ppb were detected, being below the limits imposed by health regulations for drinking water. Furthermore, our MoS₂ devices can reversibly detect vapors of naphthalene with both an electrical and optical readout, confirming that our architecture could operate as a dual sensing platform.

Compact Super Electron-Donor to Monolayer MoS2

The surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful tool to modulate the electronic properties of the material. Here we report a novel molecular dopant, Me-OED, that demonstrates record-breaking molecular doping to MoS₂, achieving a carrier density of 1.10 ± 0.37 × 10¹⁴ cm^-2 at optimal functionalization conditions; the achieved carrier density is much higher than those by other OEDs such as benzyl viologen and an OED based on 4,4'-bipyridine. This impressive doping power is attributed to the compact size of Me-OED, which leads to high surface coverage on MoS₂. To confirm, we study ^tBu-OED, which has an identical reduction potential to Me-OED but is significantly larger. Using field-effect transistor measurements and spectroscopic characterization, we estimate the doping powers of Me- and ^tBu-OED are 0.22-0.44 and 0.11 electrons per molecule, respectively, in good agreement with calculations. Our results demonstrate that the small size of Me-OED is critical to maximizing the surface coverage and molecular interactions with MoS₂, enabling us to achieve unprecedented doping of MoS₂.

Exchange Bias in Molecule/Fe3 GeTe2 van der Waals Heterostructures via Spinterface Effects

The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to engineer magnetic materials is molecular functionalization, generating hybrid interfaces with tailored magnetic interactions, called spinterfaces. However, spinterface effects have not yet been explored on layered magnetic materials. Here, the emergence of spinterface effects is demonstrated at the interface between flakes of the prototypical layered magnetic metal Fe₃ GeTe₂ and thin films of Co-phthalocyanine. Magnetotransport measurements show that the molecular layer induces a magnetic exchange bias in Fe₃ GeTe₂ , indicating that the unpaired spins in Co-phthalocyanine develop antiferromagnetic ordering and pin the magnetization reversal of Fe₃ GeTe₂ via magnetic proximity. The effect is strongest for a Fe₃ GeTe₂ thickness of 20 nm, for which the exchange bias field reaches -840 Oe at 10 K and is measurable up to ≈110 K. This value compares very favorably with previous exchange bias fields reported for Fe₃ GeTe₂ in all-inorganic van der Waals heterostructures, demonstrating the potential of molecular functionalization to tailor the magnetism of van der Waals layered materials.

Hard-Soft Chemistry Guides the Adaptable Charge Transport in Lysine-doped Heptapeptide Junctions

Counterions always coexist with charged peptides in charge transport process, which are excellent candidate components for tunable molecular electronic devices. Here, we introduced hard-soft acid base theory to analyze the...