Enhanced light emission from large-area monolayer MoS₂ using plasmonic nanodisc arrays

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Tunable Single-Photon Emission with Wafer-Scale Plasmonic Array

Bright, scalable, and deterministic single-photon emission (SPE) is essential for quantum optics, nanophotonics, and optical information systems. Recently, SPE from hexagonal boron nitride (h-BN) has attracted intense interest because it is optically active and stable at room temperature. Here, we demonstrate a tunable quantum emitter array in h-BN at room temperature by integrating a wafer-scale plasmonic array. The transient voltage electrophoretic deposition (EPD) reaction is developed to effectively enhance the filling of single-crystal nanometals in the designed patterns without aggregation, which ensures the fabricated array for tunable performances of these single-photon emitters. An enhancement of ∼500% of the SPE intensity of the h-BN emitter array is observed with a radiative quantum efficiency of up to 20% and a saturated count rate of more than 4.5 × 106 counts/s. These results suggest the integrated h-BN-plasmonic array as a promising platform for scalable and controllable SPE photonics at room temperature.

Anomalous layer-dependent photoluminescence spectra of supertwisted spiral WS2

Twisted stacking of two-dimensional materials with broken inversion symmetry, such as spiral MoTe2 nanopyramids and supertwisted spiral WS2, emerge extremely strong second- and third-harmonic generation. Unlike well-studied nonlinear optical effects in these newly synthesized layered materials, photoluminescence (PL) spectra and exciton information involving their optoelectronic applications remain unknown. Here, we report layer- and power-dependent PL spectra of the supertwisted spiral WS2. The anomalous layer-dependent PL evolutions that PL intensity almost linearly increases with the rise of layer thickness have been determined. Furthermore, from the power-dependent spectra, we find the power exponents of the supertwisted spiral WS2 are smaller than 1, while those of the conventional multilayer WS2 are bigger than 1. These two abnormal phenomena indicate the enlarged interlayer spacing and the decoupling interlayer interaction in the supertwisted spiral WS2. These observations provide insight into PL features in the supertwisted spiral materials and may pave the way for further optoelectronic devices based on the twisted stacking materials.

Surface plasmon enhancement in silver nanowires and bilayer two-dimensional materials

In order to improve the low light absorption of two-dimensional (2D) transition metal dichalcogenides (TMDCs), surface plasmon (SP) nanostructures have been widely studied. However, the impact of interlayer twist on such nanostructures has rarely been studied. Here, we construct two different composite structures of silver nanowires (Ag NWs) and pristine bilayer MoS2 (pBLM) or twisted bilayer MoS2 (tBLM). The interlayer twist can further promote the light utilization of MoS2, resulting in an ∼4-fold higher spectral enhancement in Ag/tBLM than that in Ag/pBLM. In addition, the photocurrent and detectivity of the phototransistor based on the Ag/tBLM composite structure were improved by 7-fold and ∼100-fold, respectively, compared to those of the Ag/pBLM phototransistor. Theoretical simulations show that the enhancement of photocurrent can be attributed to the enhancement of the local electric field at the interface between Ag NWs and the tBLM film, which is called the 'hot spot'. These results provide a reference for understanding the modulation mechanism of SPs and interlayer twist on the optoelectronic properties of 2D materials.

Laser-Induced photothermal activation of multilayer MoS2 with spatially controlled catalytic activity

This study investigates the effects of high-power laser irradiation on multilayer MoS2, a promising material for catalysis, optoelectronics, and energy applications. In addition to previously reported sculpting of MoS2 layers, we discovered a novel effect of laser-induced photothermal heating that drives the chemical activation of MoS2. The photothermal effect was confirmed by temperature-dependent experiments, in situ temperature measurements with nanolocalized probes, and simulations. Remarkably, we observed the reduction of Ag+ ions on laser-irradiated MoS2 layers, forming plasmonic nanostructures without external stimuli such as photons or chemical reducing agents. We attribute this phenomenon to the significant defect density within the laser-carved region and the surrounding area induced by photothermal effects. Further functionalization of the laser-modified MoS2 with 4-nitrobenzenethiol self-assembled monolayers demonstrated a significant increase in photocatalytic activity, close to 100% yield compared to the negligible activity of pristine material. Our findings contribute to a deeper understanding of the light-induced modification of MoS2 properties and introduce a novel method for spatially controlling the chemical activation of MoS2. This advancement holds significant potential in developing high-performance 2D semiconductors as nano-engineered catalytic materials.

Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers

Two-dimensional (2D) semiconductors have generated considerable attention for high-performance electronics and optoelectronics. However, to date, it is still challenging to mechanically exfoliate large-area and continuous monolayers while retaining their intrinsic properties. Here, we report a simple dry exfoliation approach to produce large-scale and continuous 2D monolayers by using a Ag film as the peeling tape. Importantly, the conducting Ag layer could be converted into AgOx nanoparticles at low annealing temperature, directly decoupling the conducting Ag with the underlayer 2D monolayers without involving any solution or etching process. Electrical characterization of the monolayer MoS2 transistor shows a decent carrier mobility of 42 cm2 V-1 s-1 and on-state current of 142 μA/μm. Finally, a plasmonic enhancement photodetector could be simultaneously realized due to the direct formation of Ag nanoparticles arrays on MoS2 monolayers, without complex approaches for nanoparticle synthesis and integration processes, demonstrating photoresponsivity and detectivity of 6.3 × 105 A/W and 2.3 × 1013 Jones, respectively.

Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

Two-dimensional semiconductors such as monolayer MoS2 have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has been hindered by the limited light absorption resulting from atomically thin thickness and low quantum yield. A highly effective approach to address these limitations is by integrating subwavelength plasmonic nanostructures with monolayer semiconductors. In this study, we employed electron beam lithography and nanoelectroplating techniques to develop a gold nanodisc (AuND) array plasmonic platform. Monolayer MoS2 transferred on top of the AuND array yields up to 150-fold photoluminescence enhancement compared to a gold film without normalization with respect to plasmonic hot spots. In addition, the unique protocol of nanoelectroplating helps to get flat-top cylindrical discs which enable less tear during the delicate wet transfer of monolayer MoS2. We explain our experimental findings based on electromagnetic simulations.

Thermal Scanning-Probe Lithography for Broad-Band On-Demand Plasmonic Nanostructures on Transparent Substrates

Thermal scanning-probe lithography (t-SPL) is a high-resolution nanolithography technique that enables the nanopatterning of thermosensitive materials by means of a heated silicon tip. It does not require alignment markers and gives the possibility to assess the morphology of the sample in a noninvasive way before, during, and after the patterning. In order to exploit t-SPL at its peak performances, the writing process requires applying an electric bias between the scanning hot tip and the sample, thereby restricting its application to conductive, optically opaque, substrates. In this work, we show a t-SPL-based method, enabling the noninvasive high-resolution nanolithography of photonic nanostructures onto optically transparent substrates across a broad-band visible and near-infrared spectral range. This was possible by intercalating an ultrathin transparent conductive oxide film between the dielectric substrate and the sacrificial patterning layer. This way, nanolithography performances comparable with those typically observed on conventional semiconductor substrates are achieved without significant changes of the optical response of the final sample. We validated this innovative nanolithography approach by engineering periodic arrays of plasmonic nanoantennas and showing the capability to tune their plasmonic response over a broad-band visible and near-infrared spectral range. The optical properties of the obtained systems make them promising candidates for the fabrication of hybrid plasmonic metasurfaces supported onto fragile low-dimensional materials, thus enabling a variety of applications in nanophotonics, sensing, and thermoplasmonics.

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalcogenides (TMDs) and nanocrystals (NCs) with low-dimensional extension, hybrid structures of semiconducting nanoscale matter can lead to fascinating new technological scenarios. Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. Here, we will review recent research on the combined TMD/NC hybrid system with an emphasis on two major interaction mechanisms: energy transfer and charge transfer. With a focus on the quantum well nature in these hybrid semiconductors, we will briefly highlight state-of-the-art protocols for their structure formation and discuss the interaction mechanisms of energy versus charge transfer, before concluding with a perspective section that highlights novel types of interactions between NCs and TMDs.

Efficient Light Coupling and Purcell Effect Enhancement for Interlayer Exciton Emitters in 2D Heterostructures Combined with SiN Nanoparticles

Optimal design of a silicon nitride waveguide structure composed of resonant nanoantennas for efficient light coupling with interlayer exciton emitters in a MoSe2-WSe2 heterostructure is proposed. Numerical simulations demonstrate up to eight times coupling efficiency improvement and twelve times Purcell effect enhancement in comparison with a conventional strip waveguide. Achieved results can be beneficial for development of on-chip non-classical light sources.

Gap plasmon modes and plasmon-exciton coupling in a hybrid Au/MoSe2/Au tunneling junction

The light-matter interaction between plasmonic nanocavity modes and excitons at the nanometer scale is here addressed in the scanning tunneling microscope configuration where an MoSe₂ monolayer is located between the tip and the substrate. We investigate by optical excitation the electromagnetic modes of this hybrid Au/MoSe₂/Au tunneling junction using numerical simulations where electron tunneling and the anisotropic character of the MoSe₂ layer are taken into account. In particular, we pointed out gap plasmon modes and Fano-type plasmon-exciton coupling taking place at the MoSe₂/Au substrate interface. The spectral properties and spatial localization of these modes are studied as a function of the tunneling parameters and incident polarization.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Probing the Optical Response and Local Dielectric Function of an Unconventional Si@MoS2 Core-Shell Architecture

Heterostructures of optical cavities and quantum emitters have been highlighted for enhanced light-matter interactions. A silicon nanosphere, core, and MoS₂, shell, structure is one such heterostructure referred to as the core@shell architecture. However, the complexity of the synthesis and inherent difficulties to locally probe this architecture have resulted in a lack of information about its localized features limiting its advances. Here, we utilize valence electron energy loss spectroscopy (VEELS) to extract spatially resolved dielectric functions of Si@MoS₂ with nanoscale spatial resolution corroborated with simulations. A hybrid electronic critical point is identified ∼3.8 eV for Si@MoS₂. The dielectric functions at the Si/MoS₂ interface is further probed with a cross-sectioned core-shell to assess the contribution of each component. Various optical parameters can be defined via the dielectric function. Hence, the methodology and evolution of the dielectric function herein reported provide a platform for exploring other complex photonic nanostructures.

Fano-Type Wavelength-Dependent Asymmetric Raman Line Shapes from MoS2 Nanoflakes

Excitation wavelength-dependent Raman spectroscopy has been carried out to study electron-phonon interaction (Fano resonance) in multi-layered bulk 2H-MoS₂ nano-flakes. The electron-phonon coupling is proposed to be caused due to interaction between energy of an excitonic quasi-electronic continuum and the discrete one phonon, first-order Raman modes of MoS₂. It is proposed that an asymmetrically broadened Raman line shape obtained by 633 nm laser excitation is due to electron-phonon interaction whose electronic continuum is provided by the well-known A and B excitons. Typical wavelength-dependent Raman line shape has been observed, which validates and quantifies the Fano interaction present in the samples. The experimentally obtained Raman scattering data show very good agreement with the theoretical Fano-Raman line-shape functions and help in estimating the coupling strength. Values of the electron-phonon interaction parameter obtained, through line-shape fitting, for the two excitation wavelengths have been compared and shown to have generic Fano-type dependence on the excitation wavelength.

Resonance Photoluminescence Enhancement of Monolayer MoS2 via a Plasmonic Nanowire Dimer Optical Antenna

Two-dimensional transition-metal dichalcogenides (TMDs) such as monolayer MoS2 exhibit remarkable optical properties. However, the intrinsic absorption and emission rates of MoS2 are very low, thus severely hindering its application in electronics and photonics. Combining MoS2 with a plasmonic optical antenna is an alternative solution to enhance the emission rates of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector. Herein, we have constructed a plasmonic gap cavity of a nanowire dimer (NWD) system as an optical antenna to brighten the emission of MoS2 off the hot spot. Different from the conventional enhancement concept which occurred in the plasmonic hot spot, the light emission off the nanogap hot spot was thoroughly investigated. We demonstrate that this new plasmonic optical nanostructure leads to a strong enhancement due to the Purcell effect. The NWD optical antenna can trap light to the near field through a high-efficiency plasmonic gap mode (PGM); then the PL emission was enhanced drastically up to 14.5-fold due to the resonance of the plasmonic gap mode (PGM) in the NWD with the excitonic band of monolayer MoS2. Theoretical simulations reveal that this NWD can alter the efficiency of convergence and excitation, which was consistent with our experimental results. This study can provide a pathway toward enhancing and controlling PGM-enhanced light emission of TMD materials beyond the plasmonic hot spot.

Strain-Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS2

2D Semiconductors are promising in the development of next-generation photodetectors. However, the performances of 2D photodetectors are largely limited by their poor light absorption (due to ultrathin thickness) and small detection range (due to large bandgap). To overcome the limitations, a strain-plasmonic coupled 2D photodetector is designed by mechanically integrating monolayer MoS₂ on top of prefabricated Au nanoparticle arrays. Within this structure, the large biaxial tensile strain can greatly reduce the MoS₂ bandgap for broadband photodetection, and at the same time, the nanoparticles can significantly enhance the light intensity around MoS₂ with much improved light absorption. Together, the strain-plasmonic coupled photodetector can broaden the detection range by 60 nm and increase the signal-to-noise ratio by 650%, representing the ultimate optimization of detection range and detection intensity at the same time. The strain-plasmonic coupling effect is further systematically characterized and confirmed by using Raman and photoluminescence spectrophotometry. Furthermore, the existence of built-in potential and photo-switching behavior is demonstrated between the strained and unstrained region, constructing a self-powered homojunction photodetector. This approach provides a simple strategy to couple strain effect and plasmonic effect, which can provide a new strategy for designing high-performance and broadband 2D optoelectronic devices.

Plasmon Tuning of Liquid Gallium Nanoparticles through Surface Anodization

In this work, tunable plasmonic liquid gallium nanoparticles (Ga NPs) were prepared through surface anodizing of the particles. Shape deformation of the Ga NPs accompanied with dimpled surface topographies could be induced during electrochemical anodization, and the formation of the anodic oxide shell helps maintain the resulting change in the particle shape. The nanoscale dimple-like textures led to changes in the localized surface plasmon resonance (LSPR) wavelength. A maximal LSPR red-shift of ~77 nm was preliminarily achieved using an anodization voltage of 0.7 V. The experimental results showed that an increase in the oxide shell thickness yielded a negligible difference in the observed LSPR, and finite-difference time-domain (FDTD) simulations also suggested that the LSPR tunability was primarily determined by the shape of the deformed particles. The extent of particle deformation could be adjusted in a very short period of anodization time (~7 s), which offers an efficient way to tune the LSPR response of Ga NPs.

Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides

Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS₂, WS₂, MoSe₂, and WSe₂, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.

Ultrafast carrier dynamics in a monolayer MoS2at carrier densities well above Mott density

Due to the growing interest in monolayer (ML) molybdenum disulfide (MoS₂) in several optoelectronic applications like lasers, detectors, sensors, it is important to understand the ultrafast behavior of the excited carriers in this material. In this article, a comprehensive study of the charge carrier dynamics of a monolayer MoS₂flake has been studied using transient transmission technique near A-exciton under high excitation densities well above the Mott density. Fluence dependent studies has been carried out to understand the origin of the processes which modifies its optical response under excitation. The dissociation of excitons leads to an observed fast bandgap renormalization. At later times when large number of carriers relax the remaining carriers forms excitons leading to a bleaching effect.

Controlling the nucleation and growth of ultrasmall metal nanoclusters with MoS2 grain boundaries

The stabilization of supported nanoclusters is critical for different applications, including catalysis and plasmonics. Herein we investigate the impact of MoS₂ grain boundaries (GBs) on the nucleation and growth of Pt NCs. The optimum atomic structure of the metal clusters is obtained using an adaptive genetic algorithm that employs a hybrid approach based on atomistic force fields and density functional theory. Our findings show that GBs stabilize the NCs up to a cluster size of nearly ten atoms, and with larger clusters having a similar binding to the pristine system. Notably, Pt monomers are found to be attracted to GB cores achieving 60% more stabilization compared to the pristine surface. Furthermore, we show that the nucleation and growth of the metal seeds are facile with low kinetic barriers, which are of similar magnitude to the diffusion barriers of metals on the pristine surface. The findings highlight the need to engineer ultrasmall NCs to take advantage of enhanced stabilization imparted by the GB region, particularly to circumvent sintering behavior for high-temperature applications.

Surface plasmon enhancement in the different spatial distributions of nanowire and two-dimensional material

Surface plasmon (SP) nanostructures have been widely researched to improve the low light absorption of two-dimensional transition metal dichalcogenides (TMDCs). However, the impact of the different coupling forms of them,...

Single-particle studies on plasmon enhanced photoluminescence of monolayer MoS2 by gold nanoparticles of different shapes

Plasmon-exciton interactions between noble metal nanostructures and two-dimensional transition metal dichalcogenides have drawn great interest due to their significantly enhanced optical properties. Plasmon resonance of noble metal nanoparticles and plasmon-exciton interactions are strongly dependent on the particle morphology. Single-particle spectroscopic studies can overcome the ensemble average effects of sample inhomogeneity to unambiguously reveal the effects of the particle morphology. In this work, plasmon modulated emission of MoS₂ in various plasmon-MoS₂ hybrid structures has been studied on the single-particle level. Gold (Au) nanoantennas of different shapes including nanosphere, nanorod, nanocube, and nanotriangle with similar overall dimensions, which have different sharp tips and contact areas with MoS₂, have been chosen to explore the particle shape effects. Different extent of enhancement in photoluminescence (PL) of MoS₂ was observed for Au nanoantennas of different shapes. It was found that Au nanotriangles gave the highest enhancement factor, while Au nanospheres gave the lowest enhancement factor. The numerical simulation results show that the dominant contribution arises from an increased quantum yield, while enhanced excitation efficiency just plays a minor role. The quantum yield enhancement is affected by both the sharp tips and contact mode of the Au nanoantenna with MoS₂. Polarization of the MoS₂ emission was also found to be modulated by the plasmon mode of the Au nanoantenna. These single-particle spectroscopic studies allow us to unambiguously reveal the effects of the particle morphology on plasmon enhanced PL in these nanohybrids to provide a better understanding of the plasmon-exciton interactions.

Two-Dimensional Nanomaterials for Boosting the Performance of Organic Solar Cells

The thin-film organic solar cells (OSCs) are currently one of the most promising photovoltaic technologies to effectively harvest the solar energy due to their attractive features of mechanical flexibility, light weight, low-cost manufacturing, and solution-processed large-scale fabrication, etc. However, the relative insufficient light absorption, short exciton diffusion distance, and low carrier mobility of the OSCs determine the power conversion efficiency (PCE) of the devices are relatively lower than their inorganic photovoltaic counterparts. To conquer the challenges, the two-dimensional (2D) nanomaterials, which have excellent photoelectric properties, tunable energy band structure, and solvent compatibility etc., exhibit the great potential to enhance the performance of the OSCs. In this review, we summarize the most recent successful applications of the 2D materials, including graphene, black phosphorus, transition metal dichalcogenides, and g-C3N4, etc., adapted in the charge transporting layer, the active layer, and the electrode of the OSCs, respectively, for boosting the PCE and stability of the devices. The strengths and weaknesses of the 2D materials in the application of OSCs are also reviewed in details. Additionally, the challenges, commercialization potentials, and prospects for the further development of 2D materials-based OSCs are outlined in the end.

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.

High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.

MoS2 with Stable Photoluminescence Enhancement under Stretching via Plasmonic Surface Lattice Resonance

In this study, by combining a large-area MoS₂ monolayer with silver plasmonic nanostructures in a deformable polydimethylsiloxane substrate, we theoretically and experimentally studied the photoluminescence (PL) enhancement of MoS₂ by surface lattice resonance (SLR) modes of different silver plasmonic nanostructures. We also observed the stable PL enhancement of MoS₂ by silver nanodisc arrays under differently applied stretching strains, caused by the mechanical holding effect of the MoS₂ monolayer. We believe the results presented herein can guarantee the possibility of stably enhancing the light emission of transition metal dichalcogenides using SLR modes in a deformable platform.

Enhanced Spontaneous Emission of Monolayer MoS2 on Epitaxially Grown Titanium Nitride Epsilon-Near-Zero Thin Films

Room-temperature photoluminescence enhancement of molybdenum disulfide (MoS₂) monolayers on epitaxial titanium nitride (TiN) thin films grown by molecular-beam-epitaxy as well as magnetron-sputtered TiN films is observed by a confocal laser scanning microscope with excitation wavelengths covering the transition of TiN's macroscopic optical properties from dielectric to plasmonic. The photoluminescence enhancement increases as TiN becomes more metallic, and strong enhancement is obtained at the excitation wavelengths equal to or longer than the epsilon-near-zero (ENZ) wavelength of TiN films. A good agreement is observed between measured and calculated enhancements. The enhancement is attributed to the increased excitation field in MoS₂ at TiN's ENZ wavelength and interference effects for thick spacers that separate the MoS₂ flakes from TiN films in the metallic regime. This study enriches the fundamental understanding of emission properties on ENZ substrates that could be important for the development of advanced nanoscale lasers/light sources, optical/biosensors, and nano-optoelectronic devices.

Recent Advances in Two-Dimensional Quantum Dots and Their Applications

Two-dimensional quantum dots have received a lot of attention in recent years due to their fascinating properties and widespread applications in sensors, batteries, white light-emitting diodes, photodetectors, phototransistors, etc. Atomically thin two-dimensional quantum dots derived from graphene, layered transition metal dichalcogenide, and phosphorene have sparked researchers' interest with their unique optical and electronic properties, such as a tunable energy bandgap, efficient electronic transport, and semiconducting characteristics. In this review, we provide in-depth analysis of the characteristics of two-dimensional quantum dots materials, their synthesis methods, and opportunities and challenges for novel device applications. This analysis will serve as a tipping point for learning about the recent breakthroughs in two-dimensional quantum dots and motivate more scientists and engineers to grasp two-dimensional quantum dots materials by incorporating them into a variety of electrical and optical fields.

Strong anisotropic enhancement of photoluminescence in WS2 integrated with plasmonic nanowire array

Layered transition metal dichalcogenides (TMDCs) have shown great potential for a wide range of applications in photonics and optoelectronics. Nevertheless, valley decoherence severely randomizes its polarization which is important to a light emitter. Plasmonic metasurface with a unique way to manipulate the light-matter interaction may provide an effective and practical solution. Here by integrating TMDCs with plasmonic nanowire arrays, we demonstrate strong anisotropic enhancement of the excitonic emission at different spectral positions. For the indirect bandgap transition in bilayer WS2, multifold enhancement can be achieved with the photoluminescence (PL) polarization either perpendicular or parallel to the long axis of nanowires, which arises from the coupling of WS2 with localized or guided plasmon modes, respectively. Moreover, PL of high linearity is obtained in the direct bandgap transition benefiting from, in addition to the plasmonic enhancement, the directional diffraction scattering of nanowire arrays. Our method with enhanced PL intensity contrasts to the conventional form-birefringence based on the aspect ratio of nanowire arrays where the intensity loss is remarkable. Our results provide a prototypical plasmon-exciton hybrid system for anisotropic enhancement of the PL at the nanoscale, enabling simultaneous control of the intensity, polarization and wavelength toward practical ultrathin photonic devices based on TMDCs.

Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity

Monolayer transition metal dichalcogenides (TMDs), direct bandgap materials with an atomically thin nature, are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we demonstrate gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS₂) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity of 2.7 × 10⁴ AW^-1, achieving a 7.2-fold enhancement in the photocurrent compared to pristine photoFETs. This benefits predominately from the combination of the enhancement of the photon-absorption-rate via the strongly localized-electromagnetic-field and the gate-tunable plasmon-induced photocarrier-generation-rate in the monolayer MoS₂. These results demonstrate a systematic methodology for designing ultrathin plasmon-enhanced photodetectors based on monolayer TMDs for next-generation ultracompact optoelectronic devices in the trans-Moore era.

Purcell-enhanced photoluminescence of few-layer MoS2 transferred on gold nanostructure arrays with plasmonic resonance at the conduction band edge

Plasmonic coupling of metallic nanostructures with two-dimensional molybdenum disulfide (MoS2) atomic layers is an important topic because it provides a pathway to manipulate the optoelectronic properties and to overcome the limited optical cross-section of the materials. Plasmonic enhanced light-matter interaction of a MoS2 layer is known to be mainly governed by optical field enhancement and the Purcell effect, while the discrimination of the contribution from each mechanism to the plasmonic enhancement is challenging. Here, we investigate photoluminescence (PL) enhancement from few-layer MoS2 transferred on Au nanostructure arrays with controlled localized surface plasmon resonance (LSPR) spectral positions that were detuned from the excitation wavelengths. Two distinctive regimes in LSPR mode-dependent PL enhancement were revealed showing a maximum enhancement (∼40-fold) with zero detuning and a modest enhancement (∼10-fold) with the red-shift detuned LSPR from the excitation wavelength, which were attributed to LSPR-induced optical field enhancement and the Purcell effect, respectively. By applying the experimental parameters into the Purcell effect formalism, an effective mode volume of ∼0.016λ03 was estimated. Our work provides an insight into how to utilize few-layer MoS2 as a base material for optoelectronics by harnessing Purcell-enhanced optical responsivity.

Tailoring anisotropic absorption in a borophene-based structure via critical coupling

The research of two-dimensional (2D) materials with atomic-scale thicknesses and unique optical properties has become a frontier in photonics and electronics. Borophene, a newly reported 2D material, provides a novel building block for nanoscale materials and devices. We present a simple borophene-based absorption structure to boost the light-borophene interaction via critical coupling in the visible wavelengths. The proposed structure consists of borophene monolayer deposited on a photonic crystal slab backed with a metallic mirror. The numerical simulations and theoretical analysis show that the light absorption of the structure can be remarkably enhanced as high as 99.80% via critical coupling mechanism with guided resonance, and the polarization-dependent absorption behaviors are demonstrated due to the strong anisotropy of borophene. We also examine the tunability of the absorption behaviors by adjusting carrier density and lifetime of borophene, air hole radius in the slab, the incident angle and polarization angle. The proposed absorption structure provides novel access to the flexible and effective manipulation of light-borophene interactions in the visible and shows a good prospect for the future borophene-based electronic and photonic devices.

Hyperspectral study of the coupling between trions in WSe2 monolayers to a circular Bragg grating cavity

Circular Bragg gratings compose a very appealing photonic platform and nanophotonic interface for the controlled light-matter coupling of emitters in nanomaterials. Here, we discuss the integration of exfoliated monolayers of WSe2 with GaInP Bragg gratings. We apply hyperspectral imaging to our coupled system, and explore the spatio-spectral characteristics of our coupled monolayer-cavity system. Our work represents a valuable step towards the integration of atomically thin quantum emitters in semiconductor nanophotonic cavities.

Plasmonic Hybrids of MoS2 and 10-nm Nanogap Arrays for Photoluminescence Enhancement

Monolayer MoS₂ has attracted tremendous interest, in recent years, due to its novel physical properties and applications in optoelectronic and photonic devices. However, the nature of the atomic-thin thickness of monolayer MoS₂ limits its optical absorption and emission, thereby hindering its optoelectronic applications. Hybridizing MoS₂ by plasmonic nanostructures is a critical route to enhance its photoluminescence. In this work, the hybrid nanostructure has been proposed by transferring the monolayer MoS₂ onto the surface of 10-nm-wide gold nanogap arrays fabricated using the shadow deposition method. By taking advantage of the localized surface plasmon resonance arising in the nanogaps, a photoluminescence enhancement of ~20-fold was achieved through adjusting the length of nanogaps. Our results demonstrate the feasibility of a giant photoluminescence enhancement for this hybrid of MoS₂/10-nm nanogap arrays, promising its further applications in photodetectors, sensors, and emitters.

Highly efficient and controllable photoluminescence emission on a suspended MoS2-based plasmonic grating

Being a new class of materials, transition metal dichalcogenides are paving the way for applications in atomically thin optoelectronics. However, the intrinsically weak light-matter interaction and the lack of manipulation ability has lead to poor light emission and tunable behavior. Here, we investigate the fluorescence characteristic of monolayer molybdenum disulfide on a metal narrow-slit grating, where a highly efficient, 471 times photoluminescence enhancement are realized, based on the hybrid surface plasmon polaritons resonances and the decreased influence of substrate. Moreover, the emitted intensity and polarization are controllable due to the polarization-dependent characteristic and anisotropy of grating. The manipulations of light-matter interactions in this special system provide a new insight into the fluorescent emission process and open a new avenue for high-performance low dimensional materials devices designs.

Perfect absorption for monolayer transition-metal dichalcogenides by critical coupling

Due to the inherent atomical size, transition-metal dichalcogenides (TMDCs) have a weak coupling with free-space light and exhibit poor optical absorption, which restricts some practical applications. Exploring an effective way to boost their absorption is important and highly desired. In this work, based on the temporal coupled-mode theory, a generic guide to approach 100% absorption of an absorber is presented. From such a theory, the perfect absorption of TMDCs integrated with dielectric photonic structure is both theoretically and numerically demonstrated. This proposed structure has advantageous tunability at the wavelengths of interest by adjusting structure parameters. Moreover, the angular dependence of the light absorption of such a structure for different polarizations is also investigated. The present work of boosting light absorption would be particularly favorable for applications in advanced photodetectors and modulators.

Structural and optical properties of monocrystalline and polycrystalline gold plasmonic nanorods

The quality of lithographically prepared structures is intimately related to the properties of the metal film from which they are fabricated. Here we compare two kinds of thin gold films on a silicon nitride membrane: a conventional polycrystalline thin film deposited by magnetron sputtering and monocrystalline gold microplates that were chemically synthesised directly on the membrane's surface for the first time. Both pristine metals were used to fabricate plasmonic nanorods using focused ion beam lithography. The structural and optical properties of the nanorods were characterized by analytical transmission electron microscopy including electron energy loss spectroscopy. The dimensions of the nanorods in both substrates reproduced well the designed size of 240×80 nm² with the deviations up to 20 nm in both length and width. The shape reproducibility was considerably improved among monocrystalline nanorods fabricated from the same microplate. Interestingly, monocrystalline nanorods featured inclined boundaries while the boundaries of the polycrystalline nanorods were upright. Q factors and peak loss probabilities of the modes in both structures are within the experimental uncertainty identical. We demonstrate that the optical response of the plasmonic nanorods is not deteriorated when the polycrystalline metal is used instead of the monocrystalline metal.

Opposite Polarity Surface Photovoltage of MoS2 Monolayers on Au Nanodot versus Nanohole Arrays

We prepared MoS₂ monolayers on Au nanodot (ND) and nanohole (NH) arrays. Both these sample arrays exhibited enhanced photoluminescence intensity compared with that of a bare SiO₂/Si substrate. The reflectance spectra of MoS₂/ND and MoS₂/NH had clear features originating from excitation of localized surface plasmon and propagating surface plasmon polaritons. Notably, the surface photovoltages (SPV) of these hybrid plasmonic nanostructures had opposite polarities, indicating negative and positive charging at MoS₂/ND and MoS₂/NH, respectively. Surface potential maps, obtained by Kelvin probe force microscopy, suggested that the potential gradient led to a distinct spatial distribution of photo-generated charges in these two samples under illumination. Furthermore, the local density of photo-generated excitons, as predicted from optical simulations, explained the SPV spectra of MoS₂/ND and MoS₂/NH. We show that the geometric configuration of the plasmonic nanostructures modified the polarity of photo-generated excess charges in MoS₂. These findings point to a useful means of optimizing optoelectronic characteristics and improving the performance of MoS₂-based plasmonic devices.

Polarization-Dependent Light Emission and Charge Creation in MoS2 Monolayers on Plasmonic Au Nanogratings

We fabricated plasmonic hybrid nanostructures consisting of MoS₂ monolayer flakes and Au nanogratings with a period of 500 nm. The angle-resolved reflectance and photoluminescence spectra of the hybrid nanostructures clearly indicated a coupling between surface plasmon polaritons (SPPs) and incoming photons. The surface photovoltage (SPV) maps could visualize the spatial distribution of net charges while shining light on the sample. Considerable polarization and wavelength dependence of the SPV signals suggested that the SPP mode enhanced the light-matter interaction and resulting exciton generation in the MoS₂ monolayer. From the photoluminescence spectra and the morphology of the suspended MoS₂ region, it could be noted that light irradiation did not much raise the temperature of the MoS₂ monolayers on the nanogratings. Nanoscopic SPV and surface topography measurements could reveal the local optoelectronic and mechanical properties of MoS₂ monolayers. This work provided us insights into the proposal of a high-performance MoS₂/metal optoelectronic devices, based on the understanding of the SPP-photon and SPP-exciton coupling.

Dielectric Nanowire Hybrids for Plasmon-Enhanced Light-Matter Interaction in 2D Semiconductors

Monolayer transition metal dichalcogenides (TMDs) with a direct band gap are suitable for various optoelectronic applications such as ultrathin light emitters and absorbers. However, their weak light absorption caused by the atomically thin layer hinders more versatile applications for high optical gains. Although plasmonic hybridization with metal nanostructures significantly enhances light-matter interactions, the corrosion, instability of the metal nanostructures, and the undesired effects of direct metal-semiconductor contact act as obstacles to its practical application. Herein, we propose a dielectric nanostructure for plasmon-enhanced light-matter interaction of TMDs. TiO₂ nanowires (NWs), as an example, are hybridized with a MoS₂ monolayer on various substrates. The structure is implemented by placing a monolayer MoS₂ between a TiO₂ NW for a photonic scattering effect and metallic substrates with a spacer for the plasmonic Purcell effect. Here, the thin dielectric spacer is aimed at minimizing emission quenching from direct metal contact, while maximizing optical field localization in ultrathin MoS₂ near the TiO₂ NW. An effective emission enhancement factor of ∼22 is attained for MoS₂ near the NW of the hybrid structure compared to the one without NWs. Our work is expected to facilitate a hybridized platform based on 2D semiconductors for high-performance and robust optoelectronics via engineering dielectric nanostructures with plasmonic materials.

Light-Controlled Near-Field Energy Transfer in Plasmonic Metasurface Coupled MoS2 Monolayer

The energy transfer from plasmonic nanostructures to semiconductors has been extensively studied to enhance light-harvesting and tailor light-matter interactions. In this study, the efficient energy transfer from an Au metasurface to monolayered MoS2 within a near-field coupling regime is reported. The metasurface is designed and fabricated to demonstrate strong photoluminescence (PL) and cathodoluminescence (CL) emission spectra. In the coupled heterostructure of MoS2 with a metasurface, both the Raman shift and absorption spectral intensities of monolayered MoS2 are affected. The spectral profile and PL peak position can be tailored owing to the energy transfer between plasmonic nanostructures and semiconductors. This is confirmed by ultrafast lifetime measurement. A theoretical model of two coupled oscillators is proposed, where the expanded general solutions (EGS) of such a model result in a series of eigenvalues that correspond to the renormalization of energy levels in modulated MoS2. The model can predict the peak shift up to tens of nanometers in hybrid structures and hence provides an alternative method to describe energy transfer between metallic structures and two-dimensional (2D) semiconductors. A viable approach for studying light-matter interactions in 2D semiconductors via near-field energy transfer is presented, which may stimulate the applications of functional nanophotonic devices.

Gate-tunable trion binding energy in monolayer MoS2 with plasmonic superlattice

Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties. The real-time control of light-matter interactions in semiconductor devices through an external optical resonant cavity is crucial for designing next-generation optoelectronic devices. Here, we report the spectroscopic identification of trion binding energy in monolayer MoS₂ field-effect transistors with plasmonic nanoresonators. In consequence, the binding energy could be regulated dynamically through an external electric field. In addition, after increasing the carrier injection, the evidence of the enhanced trion binding energy can also be observed, which can be utilized for researching magneto-plasmons. The ability to dynamically control the optical properties by electrostatic doping opens a platform for designing next-generation optoelectronic and valleytronic applications in two-dimensional crystals with accurate and precise tailored responses.

Electrically driven photon emission from individual atomic defects in monolayer WS2

Quantum dot-like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS2 bandgap. Coupling to the optical far field is mediated by tip plasmons, which transduce the excess energy into a single photon. The applied tip-sample voltage determines the transition energy. Atomically resolved emission maps of individual point defects closely resemble electronic defect orbitals, the final states of the optical transitions. Inelastic charge carrier injection into localized defect states of two-dimensional materials provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.

MoS2-based broadband and highly efficient solar absorbers

In order to obtain broadband, highly efficient, wide-angle, and polarization-insensitive solar absorbers, we propose a universal configuration consisting of monolayer molybdenum disulfide (MoS₂) and the metal-insulator-metal structure, which gives rise to significant absorption enhancement of the MoS₂ layer. Light trapping structures with silver square-, circle-, and crossed-shaped resonators are investigated. The localized surface plasmon resonances among the silver resonators induce prominent interaction between the incident photon and MoS₂ layer, contributing to efficient absorption of light energy. Simulation results show that the absorber made of square patches enables the best performance and realizes absorptance higher than 90% from 400 to 666 nm and an average absorptance greater than 91% in the range of 400-700 nm. The average light absorption within the MoS₂ layer reaches 74% in the visible spectrum, which is one of the highest levels for the existing MoS₂-based absorbers. Meanwhile, the polarization-independent designs exhibit good angle tolerance within 50° incidences. Such a universal structure can also obtain broadband and highly efficient absorption by using other transition metal dichalcogenides such as MoSe₂, WS₂, and WSe₂, which indicates that the configuration has great applicability in solar energy absorption of 2D materials. The proposed solar absorbers with simple configuration and broadband absorption in wide incident angles have potential in applications such as solar cells, photovoltaic devices, and blackbody materials.

Unprecedented Surface Plasmon Modes in Monoclinic MoO2 Nanostructures

Developing stable plasmonic materials featuring earth-abundant compositions with continuous band structures, similar to those of typical metals, has received special research interest. Owing to their metal-like behavior, monoclinic MoO₂ nanostructures have been found to support stable and intense surface plasmon (SP) resonances. However, no progress has been made on their energy and spatial distributions over individual nanostructures, nor the origin of their possibly existing specific SP modes. Here, various MoO₂ nanostructures are designed via polydopamine chemistry and managed to visualize multiple longitudinal and transversal SP modes supported by the monoclinic MoO₂ , along with intrinsic interband transitions, using scanning transmission electron microscopy coupled with ultrahigh-resolution electron energy loss spectroscopy. The identified geometry-dependent SP energies are tuned by either controlling the shape and thickness of MoO₂ nanostructures through their well-designed chemical synthesis, or by altering their length using a developed electron-beam patterning technique. Theoretical calculations reveal that the strong plasmonic behavior of the monoclinic MoO₂ is associated with the abundant delocalized electrons in the Mo d orbitals. This work not only provides a significant improvement in imaging and tailoring SPs of nonconventional metallic nanostructures, but also highlights the potential of MoO₂ nanostructures for micro-nano optical and optoelectronic applications.

Steering valley-polarized emission of monolayer MoS2 sandwiched in plasmonic antennas

Monolayer transition metal dichalcogenides have intrinsic spin-valley degrees of freedom, making it appealing to exploit valleytronic and optoelectronic applications at the nanoscale. Here, we demonstrate that a chiral plasmonic antenna consisting of two stacked gold nanorods can modulate strongly valley-polarized photoluminescence (PL) of monolayer MoS2 in a broad spectral range at room temperature. The valley-polarized PL of the MoS2 using the antenna can reach up to ~47%, with approximately three orders of PL magnitude enhancement within the plasmonic nanogap. Besides, the K and K' valleys under opposite circularly polarized light excitation exhibit different emission intensities and directivities in the far field, which can be attributed to the modulation of the valley-dependent excitons by the chiral antenna in both the excitation and emission processes. The distinct features of the ultracompact hybrid suggest potential applications for valleytronic and photonic devices, chiral quantum optics, and high-sensitivity detection.

MoS2 Monolayers on Au Nanodot Arrays: Surface Plasmon, Local Strain, and Interfacial Electronic Interaction

Metal and transition-metal dichalcogenide (TMD) hybrid systems have been attracting growing research attention because exciton-plasmon coupling is a desirable means of tuning the physical properties of TMD materials. Competing effects of metal nanostructures, such as the local electromagnetic field enhancement and luminescence quenching, affect the photoluminescence (PL) characteristics of metal/TMD nanostructures. In this study, we prepared TMD MoS₂ monolayers on hexagonal arrays of Au nanodots and investigated their physical properties by micro-PL and surface photovoltage (SPV) measurements. MoS₂ monolayers on bare Au nanodots exhibited higher PL intensities than those of MoS₂ monolayers on 5-nm-thick Al₂O₃-coated Au nanodots. The Al₂O₃ spacer layer blocked charge transfer at the Au/MoS₂ interface but allowed the transfer of mechanical strain to the MoS₂ monolayers on the nanodots. The SPV mapping results revealed not only the electron-transfer behavior at the Au/MoS₂ contacts but also the lateral drift of charge carriers at the MoS₂ surface under light illumination, which corresponds to nonradiative relaxation processes of the photogenerated excitons.