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López-Galán OA, Boll T, Nogan J, Chassaing D, Welle A, Heilmaier M, Ramos M. One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods. Sci Rep 2024; 14:7104. [PMID: 38531954 DOI: 10.1038/s41598-024-57243-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 03/15/2024] [Indexed: 03/28/2024] Open
Abstract
We present the fabrication of a MoS2-xSex thin film from a co-sputtering process using MoS2 and MoSe2 commercial targets with 99.9% purity. The sputtering of the MoS2 and MoSe2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS2-xSex phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS2-xSex thin film, indicated by a blue shift in the A1g and E1g vibrational modes at 355 cm-1 and 255 cm-1, respectively. This work is complemented by computing the thermodynamic stability of a MoS2-xSex phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials' fabrication and target latent applications of such structures.
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Affiliation(s)
- Oscar A López-Galán
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
- Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany.
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro #450 N, Ciudad Juárez, 32310, CHIH, México.
| | - Torben Boll
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - John Nogan
- Sandia National Laboratories, Center for Integrated Nanotechnologies (CINT), 1101 Eubank Bldg. SE, Albuquerque, NM, 87110, USA
| | - Delphine Chassaing
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Alexander Welle
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Martin Heilmaier
- Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany
| | - Manuel Ramos
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro #450 N, Ciudad Juárez, 32310, CHIH, México.
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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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Hossen MF, Shendokar S, Aravamudhan S. Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:410. [PMID: 38470741 DOI: 10.3390/nano14050410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/04/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
As layered materials, transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials. Interestingly, the characteristics of these materials are transformed from bulk to monolayer. The atomically thin TMDC materials can be a good alternative to group III-V and graphene because of their emerging tunable electrical, optical, and magnetic properties. Although 2D monolayers from natural TMDC materials exhibit the purest form, they have intrinsic defects that limit their application. However, the synthesis of TMDC materials using the existing fabrication tools and techniques is also not immune to defects. Additionally, it is difficult to synthesize wafer-scale TMDC materials for a multitude of factors influencing grain growth mechanisms. While defect engineering techniques may reduce the percentage of defects, the available methods have constraints for healing defects at the desired level. Thus, this holistic review of 2D TMDC materials encapsulates the fundamental structure of TMDC materials, including different types of defects, named zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D). Moreover, the existing defect engineering methods that relate to both formation of and reduction in defects have been discussed. Finally, an attempt has been made to correlate the impact of defects and the properties of these TMDC materials.
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Affiliation(s)
- Moha Feroz Hossen
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Sachin Shendokar
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Shyam Aravamudhan
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
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4
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Coelho PM. Magnetic doping in transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:203001. [PMID: 38324890 DOI: 10.1088/1361-648x/ad271b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 02/07/2024] [Indexed: 02/09/2024]
Abstract
Transition metal dichalcogenides (TMDCs) are materials with unique electronic properties due to their two-dimensional nature. Recently, there is a large and growing interest in synthesizing ferromagnetic TMDCs for applications in electronic devices and spintronics. Apart from intrinsically magnetic examples, modification via either intrinsic defects or external dopants may induce ferromagnetism in non-magnetic TMDCs and, hence expand the application of these materials. Here, we review recent experimental work on intrinsically non-magnetic TMDCs that present ferromagnetism as a consequence of either intrinsic defects or doping via self-flux approach, ion implantation or e-beam evaporation. The experimental work discussed here is organized by modification/doping mechanism. We also review current work on density functional theory calculations that predict ferromagnetism in doped systems, which also serve as preliminary data for the choice of new doped TMDCs to be explored experimentally. Implementing a controlled process to induce magnetism in two-dimensional materials is key for technological development and this topical review discusses the fundamental procedures while presenting promising materials to be investigated in order to achieve this goal.
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Affiliation(s)
- Paula Mariel Coelho
- Department of Physics, University of North Florida, Jacksonville, FL, United States of America
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Park CS, Kwon Y, Kim Y, Cho HD, Kim H, Yang W, Kim DY. Strong Room-Temperature Ferromagnetism of MoS 2 Compound Produced by Defect Generation. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:334. [PMID: 38392707 PMCID: PMC10892600 DOI: 10.3390/nano14040334] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/24/2024]
Abstract
Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS2. The pristine MoS2 exhibits diamagnetic properties from low-to-room temperature. However, MoS2 compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).
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Affiliation(s)
- Chang-Soo Park
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
| | - Younghae Kwon
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
| | - Youjoong Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea; (Y.K.); (W.Y.)
| | - Hak Dong Cho
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
| | - Heetae Kim
- Institute for Rare Isotope Science, Institute for Basic Science, Daejeon 34000, Republic of Korea;
| | - Woochul Yang
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea; (Y.K.); (W.Y.)
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea; (Y.K.); (W.Y.)
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6
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Liu H, Wu Y, Wu Z, Liu S, Zhang VL, Yu T. Coexisting Phases in Transition Metal Dichalcogenides: Overview, Synthesis, Applications, and Prospects. ACS NANO 2024; 18:2708-2729. [PMID: 38252696 DOI: 10.1021/acsnano.3c10665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Over the past decade, significant advancements have been made in phase engineering of two-dimensional transition metal dichalcogenides (TMDCs), thereby allowing controlled synthesis of various phases of TMDCs and facile conversion between them. Recently, there has been emerging interest in TMDC coexisting phases, which contain multiple phases within one nanostructured TMDC. By taking advantage of the merits from the component phases, the coexisting phases offer enhanced performance in many aspects compared with single-phase TMDCs. Herein, this review article thoroughly expounds the latest progress and ongoing efforts on the syntheses, properties, and applications of TMDC coexisting phases. The introduction section overviews the main phases of TMDCs (2H, 3R, 1T, 1T', 1Td), along with the advantages of phase coexistence. The subsequent section focuses on the synthesis methods for coexisting phases of TMDCs, with particular attention to local patterning and random formations. Furthermore, on the basis of the versatile properties of TMDC coexisting phases, their applications in magnetism, valleytronics, field-effect transistors, memristors, and catalysis are discussed. Lastly, a perspective is presented on the future development, challenges, and potential opportunities of TMDC coexisting phases. This review aims to provide insights into the phase engineering of 2D materials for both scientific and engineering communities and contribute to further advancements in this emerging field.
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Affiliation(s)
- Haiyang Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yaping Wu
- School of Physics and Technology, Xiamen University, Xiamen 361005, China
| | - Zhiming Wu
- School of Physics and Technology, Xiamen University, Xiamen 361005, China
| | - Sheng Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Vanessa Li Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ting Yu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
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7
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Linto Sibi SP, Rajkumar M, Manoharan M, Mobika J, Nithya Priya V, Rajendra Kumar RT. Humidity activated ultra-selective room temperature gas sensor based on W doped MoS 2/RGO composites for trace level ammonia detection. Anal Chim Acta 2024; 1287:342075. [PMID: 38182340 DOI: 10.1016/j.aca.2023.342075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 11/24/2023] [Accepted: 11/25/2023] [Indexed: 01/07/2024]
Abstract
The lack of highly efficient, cost effective and stable ammonia gas sensors functionable at room temperature even in extreme humid environments poses significant challenge for the future generation gas sensors. The prime factors that impede the development of such next generation gas sensors are the strong interference of humidity and sluggish selectivity. Herein, we fabricated tungsten doped molybdenum disulphide/reduced graphene oxide composite by an in-situ hydrothermal method to exploit the adsorption, dissolution (solubility), ionization and transmission process of ammonia and thereby to effectuate its trace level detection even in indispensable humid environments. The protype based on 5 at.% Tungsten doped MoS2/RGO (W5) gas sensor exhibited 3.8-fold increment in its response to 50 ppm of ammonia when the relative humidity varied from 20 % to 70 % with ultra-high selectivity at room temperature. The as prepared gas sensor revealed a practical detection limit down to 1 ppm with a substantial response and rapid recovery time. Furthermore, W5 gas sensor exhibited a 42-fold increment in response to 50 ppm of ammonia relative to its pristine (MoS2/RGO) MG composite with a RH of 70 %. The proton hopping mechanism accountable for such an enormous enhancement in ammonia sensing and its potential for breath sensor are briefly annotated.
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Affiliation(s)
- S P Linto Sibi
- Department of Physics, PSG College of Arts and Science, Coimbatore, 641014, Tamil Nadu, India
| | - M Rajkumar
- Department of Physics, PSG College of Arts and Science, Coimbatore, 641014, Tamil Nadu, India.
| | - Mathankumar Manoharan
- Advanced Materials and Devices Laboratory (AMDL), Department of Nanoscience and Technology, Bharathiar University, Coimbatore, 641046, Tamil Nadu, India
| | - J Mobika
- Department of Physics, Nandha Engineering College, Erode, Tamil Nadu, 638052, India
| | - V Nithya Priya
- Department of Physics, PSG College of Arts and Science, Coimbatore, 641014, Tamil Nadu, India
| | - R T Rajendra Kumar
- Advanced Materials and Devices Laboratory (AMDL), Department of Nanoscience and Technology, Bharathiar University, Coimbatore, 641046, Tamil Nadu, India
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8
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Chen W, Chen Q, Zhang J, Zhou L, Tang W, Wang Z, Deng J, Wang S. Electronic and magnetic properties of transition-metal-doped monolayer B 2S 2 within GGA + U framework. RSC Adv 2024; 14:3390-3399. [PMID: 38259982 PMCID: PMC10801446 DOI: 10.1039/d3ra08472h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Accepted: 01/16/2024] [Indexed: 01/24/2024] Open
Abstract
Considering the significant role of magnetism induction in two-dimensional (2D) semiconductor materials, we systematically investigate the effects of various dopants from the 3d and 4d transition metal (TM) series, including Ti, V, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag and Cd, on the electronic and magnetic properties of monolayer B2S2 through first-principles calculations. The calculated formation energies indicate that substitutional doping at the B site with various TM atoms could be achieved under S-rich growth conditions. What matters is that with the exception of systems doped with Cu, Tc, and Ag elements, which exhibit non-magnetic semiconductor properties, all other doped systems demonstrate magnetism. Specifically, the Cr-, Ni- and Pd-doped monolayers are magnetic half-metals, while the rest are magnetic semiconductors. We have also performed calculations of magnetic couplings between two TM atoms with an impurity concentration of 3.12%, revealing the prevalence of weak magnetic coupling in the majority of the magnetic systems examined. Moreover, the monolayers doped with Cr, Zr and Pd atoms exhibit ferromagnetic ground states. These findings strongly support the high potential for inducing magnetism in the B2S2 monolayer through B-site doping.
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Affiliation(s)
- Wei Chen
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Qi Chen
- Zhongxiang No. 2 Middle School Jingmen 431900 China
| | - Jianming Zhang
- Institute of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Lin Zhou
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Wenxiao Tang
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Zhiyou Wang
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Jiwei Deng
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Shifeng Wang
- College of Information Engineering, Hunan Industry Polytechnic 410000 China
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Shinde PA, Ariga K. Two-Dimensional Nanoarchitectonics for Two-Dimensional Materials: Interfacial Engineering of Transition-Metal Dichalcogenides. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:18175-18186. [PMID: 38047629 DOI: 10.1021/acs.langmuir.3c02929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
Transition-metal dichalcogenides (TMDs) have attracted increasing attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif band gap, and phase-transition ability. Even though TMDs have a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With modified properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.
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Affiliation(s)
- Pragati A Shinde
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
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Stolz S, Hou B, Wang D, Kozhakhmetov A, Dong C, Gröning O, Robinson JA, Qiu DY, Schuler B. Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe 2. ACS NANO 2023. [PMID: 37976219 DOI: 10.1021/acsnano.3c04841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Charged dopants in 2D transition metal dichalcogenides (TMDs) have been associated with the formation of hydrogenic bound states, defect-bound trions, and gate-controlled magnetism. Charge-transfer at the TMD-substrate interface and the proximity to other charged defects can be used to regulate the occupation of the dopant's energy levels. In this study, we examine vanadium-doped WSe2 monolayers on quasi-freestanding epitaxial graphene, by high-resolution scanning probe microscopy and ab initio calculations. Vanadium atoms substitute W atoms and adopt a negative charge state through charge donation from the graphene substrate. VW-1 dopants exhibit a series of occupied p-type defect states, accompanied by an intriguing electronic fine-structure that we attribute to hydrogenic states bound to the charged impurity. We systematically studied the hybridization in V dimers with different separations. For large dimer separations, the 2e- charge state prevails, and the magnetic moment is quenched. However, the Coulomb blockade in the nearest-neighbor dimer configuration stabilizes a 1e- charge state. The nearest-neighbor V-dimer exhibits an open-shell character for the frontier defect orbital, giving rise to a paramagnetic ground state. Our findings provide microscopic insights into the charge stabilization and many-body effects of single dopants and dopant pairs in a TMD host material.
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Affiliation(s)
- Samuel Stolz
- nanotech@surfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department of Physics, University of California, Berkeley, California 94720, United States
| | - Bowen Hou
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Dan Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Azimkhan Kozhakhmetov
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16082, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chengye Dong
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Oliver Gröning
- nanotech@surfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16082, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Bruno Schuler
- nanotech@surfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
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11
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Buckingham MA, Skelton JM, Lewis DJ. Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder. CRYSTAL GROWTH & DESIGN 2023; 23:6998-7009. [PMID: 37808901 PMCID: PMC10557048 DOI: 10.1021/acs.cgd.3c00712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 08/03/2023] [Indexed: 10/10/2023]
Abstract
High-entropy materials are a nascent class of materials that exploit a high configurational entropy to stabilize multiple elements in a single crystal lattice and to yield unique physical properties for applications in energy storage, catalysis, and thermoelectric energy conversion. Initially, the synthesis of these materials was conducted by approaches requiring high temperatures and long synthetic time scales. However, successful homogeneous mixing of elements at the atomic level within the lattice remains challenging, especially for the synthesis of nanomaterials. The use of atom-up synthetic approaches to build crystal lattices atom by atom, rather than the top-down alteration of extant crystalline lattices, could lead to faster, lower-temperature, and more sustainable approaches to obtaining high entropy materials. In this Perspective, we discuss some of these state-of-the-art atom-up synthetic approaches to high entropy materials and contrast them with more traditional approaches.
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Affiliation(s)
- Mark A. Buckingham
- Department
of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, United
Kingdom
| | - Jonathan M. Skelton
- Department
of Chemistry, The University of Manchester, Oxford Road, Manchester, M13 9PL, United
Kingdom
| | - David J. Lewis
- Department
of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, United
Kingdom
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12
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Ma H, Huang X, Li L, Peng W, Lin S, Ding Y, Mai L. Boosting the Hydrogen Evolution Reaction Performance of P-Doped PtTe 2 Nanocages via Spontaneous Defects Formation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302685. [PMID: 37312427 DOI: 10.1002/smll.202302685] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 05/28/2023] [Indexed: 06/15/2023]
Abstract
PtTe2 , a member of the noble metal dichalcogenides (NMDs), has aroused great interest in exploring its behavior in the hydrogen evolution reaction (HER) due to the unique type-II topological semimetallic nature. In this work, a simple template-free hydrothermal method to obtain the phosphorus-doped (P-doped) PtTe2 nanocages with abundant amorphous and crystalline interface (A/C-P-PtTe2 ) is developed. Revealed by density functional theory calculations, the atomic Te vacancies can spontaneously form on the basal planes of PtTe2 by the P doping, which results in the unsaturated Pt atoms exposed as the active sites in the amorphous layer for HER. Owing to the defective structure, the A/C-P-PtTe2 catalysts have the fast Tafel step determined kinetics in HER, which contributes to an ultralow overpotential (η = 28 mV at 10 mA cm-2 ) and a small Tafel slope of 37 mV dec-1 . More importantly, benefiting from the inner stable crystalline P-PtTe2 nanosheets, limited decay of the performance is observed after chronopotentiometry test. This work reveals the important role of the inherent relationship between structure and activity in PtTe2 for HER, which may bring another enlightenment for the design of efficient catalysts based on NMDs in the near future.
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Affiliation(s)
- Hancheng Ma
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Xiang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Luyu Li
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Wei Peng
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Sheng Lin
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Yao Ding
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Liqiang Mai
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
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13
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Torsi R, Munson KT, Pendurthi R, Marques E, Van Troeye B, Huberich L, Schuler B, Feidler M, Wang K, Pourtois G, Das S, Asbury JB, Lin YC, Robinson JA. Dilute Rhenium Doping and its Impact on Defects in MoS 2. ACS NANO 2023; 17:15629-15640. [PMID: 37534591 DOI: 10.1021/acsnano.3c02626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2023]
Abstract
Substitutionally doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 ppm by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10×. Ab initio models indicate the origin of the reduction is an increase in the free-energy of sulfur-vacancy formation at the MoS2 growth-front when Re is introduced. Defect photoluminescence (PL) commonly seen in undoped MOCVD MoS2 is suppressed by 6× at 0.05 atomic percent (at. %) Re and completely quenched with 1 at. % Re. Furthermore, we find that Re-MoS2 transistors exhibit a 2× increase in drain current and carrier mobility compared to undoped MoS2, indicating that sulfur vacancy reduction improves carrier transport in the Re-MoS2. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
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Affiliation(s)
- Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kyle T Munson
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rahul Pendurthi
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Esteban Marques
- Imec, Leuven 3001, Belgium
- Department of Molecular Design and Synthesis, KU Leuven, Celestijnenlaan 200f - Postbox 2404, 3001 Leuven, Belgium
| | | | - Lysander Huberich
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Bruno Schuler
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Maxwell Feidler
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | | | - Saptarshi Das
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - John B Asbury
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu City, 300093, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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14
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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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15
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Jiang J, Feng W, Wen Y, Yin L, Wang H, Feng X, Pei YL, Cheng R, He J. Tuning 2D Magnetism in Cobalt Monoxide Nanosheets Via In Situ Nickel-Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301668. [PMID: 37015006 DOI: 10.1002/adma.202301668] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/23/2023] [Indexed: 06/02/2023]
Abstract
Element doping has become an effective strategy to engineer the magnetic properties of two-dimensional (2D) materials and is widely explored in van der Waals layered transition metal dichalcogenides. However, the high-concentration substitution doping of 2D nonlayered metal oxides, which can preserve the original crystal texture and guarantee the homogeneity of doping distribution, is still a critical challenge due to the isotropic bonding of closed-packed structures. In this work, the synthesis of high-quality 2D nonlayered nickel-doped cobalt monoxide nanosheets via in situ atmospheric pressure chemical vapor deposition method is reported. High-resolution transmission electron microscopy confirmed that nickel atoms are doped at the intrinsic cobalt atom sites. The nickel doping concentration is stable at ≈15%, superior to most magnetic dopants doping in 2D materials and metal oxides. Magnetic measurements showed that pristine cobalt monoxide is nonferromagnetic, whereas nickel-doped cobalt monoxide exhibits robust ferromagnetic behavior with a Curie temperature of ≈180 K. Density functional theory calculations reveal that nickel atoms can improve the internal ferromagnetic correlation, giving rise to significant ferromagnetic performance of cobalt monoxide nanosheets. These results provide a valuable case for tuning the competing correlated states and magnetic ordering by substitution doping in 2D nonlayered oxide semiconductors.
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Affiliation(s)
- Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenyong Feng
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Yan-Li Pei
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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16
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Chen Q, Huang J, Xiao T, Cao L, Liu D, Li X, Niu M, Xu G, Kajiyoshi K, Feng L. V-doped Ni 2P nanoparticle grafted g-C 3N 4 nanosheets for enhanced photocatalytic hydrogen evolution performance under visible light. Dalton Trans 2023. [PMID: 37194372 DOI: 10.1039/d3dt00996c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Exploring low-cost and highly active photocatalysts with noble metal-free cocatalysts is of great significance for photocatalytic hydrogen evolution under simulated sunlight irradiation. In this work, a novel V-doped Ni2P nanoparticle loaded g-C3N4 nanosheet is reported as a highly efficient photocatalyst for H2 evolution under visible light irradiation. The results demonstrate that the optimized 7.8 wt% V-Ni2P/g-C3N4 photocatalyst exhibits a high hydrogen evolution rate of 271.5 μmol g-1 h-1, which is comparable to that of the 1 wt% Pt/g-C3N4 photocatalyst (279 μmol g-1 h-1), and shows favorable hydrogen evolution stability for five successive runs within 20 h. The remarkable photocatalytic hydrogen evolution performance of V-Ni2P/g-C3N4 is mainly due to the enhanced visible light absorption ability, the facilitated separation of photo-generated electron-hole pairs, the prolonged lifetime of photo-generated carriers and the fast transmission ability of electrons.
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Affiliation(s)
- Qian Chen
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Jianfeng Huang
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Ting Xiao
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Liyun Cao
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Dinghan Liu
- School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Xiaoyi Li
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Mengfan Niu
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Guoting Xu
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
| | - Koji Kajiyoshi
- Kochi Key University, Research Laboratory of Hydrothermal Chemistry, Kochi 780-8520, Japan
| | - Liangliang Feng
- School of Materials Science and Engineering, International S&T Cooperation Foundation of Shaanxi Province, Shaanxi University of Science and Technology, Xi'an 710021, China.
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17
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Son E, Lee S, Seo J, Kim U, Kim SH, Baik JM, Han YK, Park H. Engineering the Local Atomic Configuration in 2H TMDs for Efficient Electrocatalytic Hydrogen Evolution. ACS NANO 2023. [PMID: 37183803 DOI: 10.1021/acsnano.3c02344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The introduction of heteroatoms is a widely employed strategy for electrocatalysis of transition metal dichalcogenides (TMDs). This approach activates the inactive basal plane, effectively boosting the intrinsic catalytic activity. However, the effect of atomic configurations incorporated within the TMDs' lattice on catalytic activity is not thoroughly understood owing to the lack of controllable synthetic approaches for highly doped TMDs. In this study, we demonstrate a facile approach to realizing heavily doped MoS2 with a high doping concentration above 16% via intermediate-reaction-mediated chemical vapor deposition. As the V doping concentration increased, the incorporated V atoms coalesced in a manner that enabled both the basal plane activation and electrical conductivity enhancement of MoS2. This accelerated the kinetics of the hydrogen evolution reaction (HER) through the reduced Gibbs free energy of hydrogen adsorption, as evidenced by experimental and theoretical analyses. Consequently, the coalesced V-doped MoS2 exhibited superior HER performance, with an overpotential of 100 mV at 10 mA cm-2, surpassing the pristine and single-atom-doped counterparts. This study provides an intriguing pathway for engineering the atomic doping configuration of TMDs to develop efficient 2D nanomaterial-based electrocatalysts.
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Affiliation(s)
- Eunbin Son
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sangjin Lee
- Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Jihyung Seo
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Ungsoo Kim
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sang Heon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeong Min Baik
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young-Kyu Han
- Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Hyesung Park
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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18
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Fang M, Yang EH. Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103701. [PMID: 37241328 DOI: 10.3390/ma16103701] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/14/2023] [Accepted: 05/10/2023] [Indexed: 05/28/2023]
Abstract
Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.
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Affiliation(s)
- Mengqi Fang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
| | - Eui-Hyeok Yang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
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19
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Qu J, Elgendy A, Cai R, Buckingham MA, Papaderakis AA, de Latour H, Hazeldine K, Whitehead GFS, Alam F, Smith CT, Binks DJ, Walton A, Skelton JM, Dryfe RAW, Haigh SJ, Lewis DJ. A Low-Temperature Synthetic Route Toward a High-Entropy 2D Hexernary Transition Metal Dichalcogenide for Hydrogen Evolution Electrocatalysis. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204488. [PMID: 36951493 DOI: 10.1002/advs.202204488] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 02/09/2023] [Indexed: 05/18/2023]
Abstract
High-entropy (HE) metal chalcogenides are a class of materials that have great potential in applications such as thermoelectrics and electrocatalysis. Layered 2D transition-metal dichalcogenides (TMDCs) are a sub-class of high entropy metal chalcogenides that have received little attention to date as their preparation currently involves complicated, energy-intensive, or hazardous synthetic steps. To address this, a low-temperature (500 °C) and rapid (1 h) single source precursor approach is successfully adopted to synthesize the hexernary high-entropy metal disulfide (MoWReMnCr)S2 . (MoWReMnCr)S2 powders are characterized by powder X-ray diffraction (pXRD) and Raman spectroscopy, which confirmed that the material is comprised predominantly of a hexagonal phase. The surface oxidation states and elemental compositions are studied by X-ray photoelectron spectroscopy (XPS) whilst the bulk morphology and elemental stoichiometry with spatial distribution is determined by scanning electron microscopy (SEM) with elemental mapping information acquired from energy-dispersive X-ray (EDX) spectroscopy. The bulk, layered material is subsequently exfoliated to ultra-thin, several-layer 2D nanosheets by liquid-phase exfoliation (LPE). The resulting few-layer HE (MoWReMnCr)S2 nanosheets are found to contain a homogeneous elemental distribution of metals at the nanoscale by high angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) with EDX mapping. Finally, (MoWReMnCr)S2 is demonstrated as a hydrogen evolution electrocatalyst and compared to 2H-MoS2 synthesized using the molecular precursor approach. (MoWReMnCr)S2 with 20% w/w of high-conductivity carbon black displays a low overpotential of 229 mV in 0.5 M H2 SO4 to reach a current density of 10 mA cm-2 , which is much lower than the overpotential of 362 mV for MoS2 . From density functional theory calculations, it is hypothesised that the enhanced catalytic activity is due to activation of the basal plane upon incorporation of other elements into the 2H-MoS2 structure, in particular, the first row TMs Cr and Mn.
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Affiliation(s)
- Jie Qu
- Department of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Amr Elgendy
- Department of Chemistry and Sir Henry Royce Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Rongsheng Cai
- Department of Materials, National Graphene Institute and Sir Henry Royce Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Mark A Buckingham
- Department of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Athanasios A Papaderakis
- Department of Chemistry and Sir Henry Royce Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Hugo de Latour
- Department of Materials, National Graphene Institute and Sir Henry Royce Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Kerry Hazeldine
- Department of Chemistry and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - George F S Whitehead
- Department of Chemistry, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Firoz Alam
- Department of Chemistry, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Charles T Smith
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - David J Binks
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Alex Walton
- Department of Chemistry and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Jonathan M Skelton
- Department of Chemistry, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Robert A W Dryfe
- Department of Chemistry and Sir Henry Royce Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Sarah J Haigh
- Department of Materials, National Graphene Institute and Sir Henry Royce Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - David J Lewis
- Department of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
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20
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Zeb Z, Huang Y, Chen L, Zhou W, Liao M, Jiang Y, Li H, Wang L, Wang L, Wang H, Wei T, Zang D, Fan Z, Wei Y. Comprehensive overview of polyoxometalates for electrocatalytic hydrogen evolution reaction. Coord Chem Rev 2023. [DOI: 10.1016/j.ccr.2023.215058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023]
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21
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Zhang R, Jiang J, Wu W. Wearable chemical sensors based on 2D materials for healthcare applications. NANOSCALE 2023; 15:3079-3105. [PMID: 36723394 DOI: 10.1039/d2nr05447g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Chemical sensors worn on the body could make possible the continuous, noninvasive, and accurate monitoring of vital human signals, which is necessary for remote health monitoring and telemedicine. Attractive for creating high-performance, wearable chemical sensors are atomically thin materials with intriguing physical features, abundant chemistry, and high surface-to-volume ratios. These advantages allow for appropriate material-analyte interactions, resulting in a high level of sensitivity even at trace analyte concentrations. Previous review articles covered the material and device elements of 2D material-based wearable devices extensively. In contrast, little research has addressed the existing state, future outlook, and promise of 2D materials for wearable chemical sensors. We provide an overview of recent advances in 2D-material-based wearable chemical sensors to overcome this deficiency. The structure design, manufacturing techniques, and mechanisms of 2D material-based wearable chemical sensors will be evaluated, as well as their applicability in human health monitoring. Importantly, we present a thorough review of the current state of the art and the technological gaps that would enable the future design and nanomanufacturing of 2D materials and wearable chemical sensors. Finally, we explore the challenges and opportunities associated with designing and implementing 2D wearable chemical sensors.
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Affiliation(s)
- Ruifang Zhang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Jing Jiang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
- Regenstrief Center for Healthcare Engineering, Purdue University, West Lafayette, Indiana 47907, USA
- The Center for Education and Research in Information Assurance and Security (CERIAS), Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
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22
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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23
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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24
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Sohn A, Kim C, Jung JH, Kim JH, Byun KE, Cho Y, Zhao P, Kim SW, Seol M, Lee Z, Kim SW, Shin HJ. Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase-Transition-Induced Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2103286. [PMID: 34309090 DOI: 10.1002/adma.202103286] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Revised: 06/19/2021] [Indexed: 06/13/2023]
Abstract
Wafer-scale growth of transition metal dichalcogenides with precise control over the number of layers, and hence the electronic state is an essential technology for expanding the practical application of 2D materials. Herein, a new growth method, phase-transition-induced growth (PTG), is proposed for the precisely controlled growth of molybdenum disulfide (MoS2 ) films consisting of one to eleven layers with spatial uniformity on a 2 in. wafer. In this method, an energetically unstable amorphous MoSx Oy (a-MoSx Oy ) phase is effectively converted to a thermodynamically stable crystalline MoS2 film. The number of MoS2 layers is readily controlled layer-by-layer by controlling the amount of Mo atoms in a-MoSx Oy , which is also applicable for the growth of heteroatom-inserted MoS2 . The electronic states of intrinsic and Nb-inserted MoS2 with one and four layers grown by PTGare are analyzed based on their work functions. The work function of monolayer MoS2 effectively increases with the substitution of Nb for Mo. As the number of layers increases to four, charge screening becomes weaker, dopant ionization becomes easier, and ultimately the work function increases further. Thus, better electronic state modulation is achieved in a thicker layer, and in this respect, PTG has the advantage of enabling precise control over the film thickness.
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Affiliation(s)
- Ahrum Sohn
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Changhyun Kim
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Jae-Hwan Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jung Hwa Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Kyung-Eun Byun
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Yeonchoo Cho
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Pin Zhao
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sang Won Kim
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Minsu Seol
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Sang-Woo Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hyeon-Jin Shin
- Samsung Advanced Institute of Technology, Suwon, 443-803, Republic of Korea
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25
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Nanoarchitectured assembly and surface of two-dimensional (2D) transition metal dichalcogenides (TMDCs) for cancer therapy. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2022.214765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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26
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Well-Defined Ultrasmall V-NiP2 Nanoparticles Anchored g-C3N4 Nanosheets as Highly Efficient Visible-Light-Driven Photocatalysts for H2 Evolution. Catalysts 2022. [DOI: 10.3390/catal12090998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Exploring low-cost and highly active, cost-effective cocatalysts is of great significance to improve the hydrogen evolution performance of semiconductor photocatalysts. Herein, a novel ultrasmall V-doped NiP2 nanoparticle, as an efficient cocatalyst, is reported to largely upgrade the photocatalytic hydrogen evolution reaction (HER) of g-C3N4 nanosheets under visible-light irradiation. Experimental results demonstrate that V-NiP2 cocatalyst can enhance the visible-light absorption ability, facilitate the separation of photo-generated electron-hole pairs and boost the transfer ability of electrons of g-C3N4. Moreover, the V-NiP2/g-C3N4 hybrid exhibits prominent photocatalytic HER activity 17 times higher than the pristine g-C3N4 counterpart, even outperforming the 1 wt.% platinum-loaded g-C3N4. This work displays that noble-metal-free V-NiP2 cocatalyst can serve as a promising and efficient alternative to Pt for high-efficiency photocatalytic H2 evolution.
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27
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Shen D, Zhao B, Zhang Z, Zhang H, Yang X, Huang Z, Li B, Song R, Jin Y, Wu R, Li B, Li J, Duan X. Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2. ACS NANO 2022; 16:10623-10631. [PMID: 35735791 DOI: 10.1021/acsnano.2c02214] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe2) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe2 monolayer. The Fe-doped MoSe2 monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl3/Na2MoO4. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe2 monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe2 samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe2 field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.
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Affiliation(s)
- Dingyi Shen
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
- School of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Rong Song
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Yejun Jin
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bo Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
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28
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Zhao H, Zhang G, Yan B, Ning B, Wang C, Zhao Y, Shi X. Substantially Enhanced Properties of 2D WS 2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation. Research (Wash D C) 2022; 2022:9840970. [PMID: 35909939 PMCID: PMC9285636 DOI: 10.34133/2022/9840970] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Accepted: 06/06/2022] [Indexed: 12/03/2022] Open
Abstract
Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS2 by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS2 is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redshift in peaks are observed from the fluorescent spectra of Er-doped WS2 monolayers compared with their counterparts of the pristine WS2 monolayers, which agrees well with the density functional theory calculations. In addition, over 11 times of dark current, 469 times of photocurrents, photoresponsivity, and external quantum efficiency, and two orders of photoresponse speed are demonstrated from the Er-doped WS2 photodetector compared with those of the pristine WS2 device. Our findings prove rare-earth doping in 2D materials, the exciting and ideal technique for substantially enhanced photoluminescent and photoresponsive properties.
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Affiliation(s)
- Hongquan Zhao
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, China
| | - Guoxing Zhang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, China
- University of Chinese Academy of Sciences, Beijing 100064, China
| | - Bing Yan
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, China
- University of Chinese Academy of Sciences, Beijing 100064, China
| | - Bo Ning
- University of Chinese Academy of Sciences, Beijing 100064, China
- Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Chunxiang Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, China
| | - Yang Zhao
- Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xuan Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, China
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29
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Electronic structures and magnetic properties of 3d transition metal doped monolayer RhI3. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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30
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Singh A, Price CC, Shenoy VB. Magnetic Order, Electrical Doping, and Charge-State Coupling at Amphoteric Defect Sites in Mn-Doped 2D Semiconductors. ACS NANO 2022; 16:9452-9460. [PMID: 35617052 DOI: 10.1021/acsnano.2c02387] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) dilute magnetic semiconductors (DMSs) are attractive material platforms for applications in multifunctional nanospintronics due to the prospect of embedding controllable magnetic order within nanoscale semiconductors. Identifying candidate host material and dopant systems requires consideration of doping formation energies, magnetic ordering, and the tendency for dopants to form clustered domains. In this work, we consider the defect thermodynamics and the dilute magnetic properties across charge states of 2D-MoS2 and 2D-WS2 with Mn magnetic dopants as candidate systems for 2D-DMSs. Using hybrid density functional calculations, we study the magnetic and electronic properties of these systems across configurations with thermodynamically favorable defects: 2D-MoS2 doped with Mn atoms at sulfur site (MnS), at two Mo sites (2MnMo), on top of a Mo atom (Mn-top), and at a Mo site (MnMo). While the majority of the Mn-defect complexes provide trap states, MnMo and MnW are amphoteric, although previously predicted to be donor defects. The impact of cluster formation of these amphoteric defects on magnetic ordering is also considered; both MnMo-MnMo (2Mn2Mo) and MnW-MnW (2Mn2W) clusters are found to be stable in ferromagnetic (FM) ordering. Interestingly, we observed the defect charge state dependent magnetic behavior of 2Mn2Mo and 2Mn2W clusters in 2D-TMDs. We investigate that the FM coupling of 2Mn2Mo and 2Mn2W clusters is stable in only a neutral charge state; however, the antiferromagnetic (AFM) coupling is stable in the +1 charge state. 2Mn2Mo clusters provide shallow donor levels in AFM coupling and deep donor levels in FM coupling. 2Mn2W clusters lead to trap states in the FM and AFM coupling. We demonstrate the AFM to FM phase transition at a critical electron density nce = 3.5 × 1013 cm-2 in 2D-MoS2 and 2D-WS2. At a 1.85% concentration of Mn, we calculate the Curie temperature of 580 K in the mean-field approximation.
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Affiliation(s)
- Akash Singh
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Christopher C Price
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vivek B Shenoy
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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31
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Nguyen LAT, Dhakal KP, Lee Y, Choi W, Nguyen TD, Hong C, Luong DH, Kim YM, Kim J, Lee M, Choi T, Heinrich AJ, Kim JH, Lee D, Duong DL, Lee YH. Spin-Selective Hole-Exciton Coupling in a V-Doped WSe 2 Ferromagnetic Semiconductor at Room Temperature. ACS NANO 2021; 15:20267-20277. [PMID: 34807575 DOI: 10.1021/acsnano.1c08375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
While valley polarization with strong Zeeman splitting is the most prominent characteristic of two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors under magnetic fields, enhancement of the Zeeman splitting has been demonstrated by incorporating magnetic dopants into the host materials. Unlike Fe, Mn, and Co, V is a distinctive dopant for ferromagnetic semiconducting properties at room temperature with large Zeeman shifting of band edges. Nevertheless, little known is the excitons interacting with spin-polarized carriers in V-doped TMDs. Here, we report anomalous circularly polarized photoluminescence (CPL) in a V-doped WSe2 monolayer at room temperature. Excitons couple to V-induced spin-polarized holes to generate spin-selective positive trions, leading to differences in the populations of neutral excitons and trions between left and right CPL. Using transient absorption spectroscopy, we elucidate the origin of excitons and trions that are inherently distinct for defect-mediated and impurity-mediated trions. Ferromagnetic characteristics are further confirmed by the significant Zeeman splitting of nanodiamonds deposited on the V-doped WSe2 monolayer.
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Affiliation(s)
- Lan-Anh T Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Krishna P Dhakal
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yuhan Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Wooseon Choi
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Tuan Dung Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chengyun Hong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dinh Hoa Luong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Myeongwon Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Taeyoung Choi
- Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, Korea
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Andreas J Heinrich
- Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, Korea
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Ji-Hee Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Donghun Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
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32
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Lin DY, Shih YT, Tseng WC, Lin CF, Chen HZ. Influence of Mn, Fe, Co, and Cu Doping on the Photoelectric Properties of 1T HfS 2 Crystals. MATERIALS (BASEL, SWITZERLAND) 2021; 15:173. [PMID: 35009321 PMCID: PMC8745773 DOI: 10.3390/ma15010173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2021] [Revised: 12/16/2021] [Accepted: 12/23/2021] [Indexed: 06/14/2023]
Abstract
Doping plays a vital role in the application of transition-metal dichalcogenides (TMDCs) because it can increase the functionality of TMDCs by tuning their native characteristics. In this study, the influence of Mn, Fe, Co, and Cu doping on the photoelectric properties of HfS2 was investigated. Pristine, Mn-, Fe-, Co-, and Cu-doped HfS2 crystals were grown using the chemical vapor transport method. Scanning electron microscopy images showed that the crystals were layered and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy measurements confirmed that the crystals were in the 1T-phase with a CdI2-like structure. The bandgap of pristine HfS2 obtained from the absorption and photoconductivity spectra was approximately 1.99 eV. As the dopant changed from Mn, Fe, and Co, to Cu, the bandgap gradually increased. The activation energies of the samples were determined using temperature-dependent current-voltage curves. After doping, the activation energy decreased, and the Co-doped HfS2 exhibited the smallest activation energy. Time-resolved photoresponse measurements showed that doping improved the response of HfS2 to light; the Co-doped HfS2 exhibited the best response. The photoresponsivity of HfS2 as a function of the laser power and bias voltage was measured. After doping, the photoresponsivity increased markedly; the Co-doped HfS2 exhibited the highest photoresponsivity. All the experimental results indicated that doping with Mn, Fe, Co, and Cu significantly improved the photoresponsive performance of HfS2, of which Co-doped HfS2 had the best performance.
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Affiliation(s)
- Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua 500208, Taiwan;
| | - Yu-Tai Shih
- Department of Physics, National Changhua University of Education, Changhua 500207, Taiwan
| | - Wei-Chan Tseng
- Graduate Institute of Photonics, National Changhua University of Education, Changhua 500207, Taiwan;
| | - Chia-Feng Lin
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402202, Taiwan;
| | - Hone-Zern Chen
- Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 412406, Taiwan;
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Seravalli L, Bosi M. A Review on Chemical Vapour Deposition of Two-Dimensional MoS 2 Flakes. MATERIALS (BASEL, SWITZERLAND) 2021; 14:7590. [PMID: 34947186 PMCID: PMC8704647 DOI: 10.3390/ma14247590] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 12/02/2021] [Accepted: 12/07/2021] [Indexed: 12/13/2022]
Abstract
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.
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Affiliation(s)
- Luca Seravalli
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
| | - Matteo Bosi
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
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34
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Su W, Zhang Z, Cao Q, Wang D, Lu H, Mi W, Du Y. Enhancing the Curie temperature of two-dimensional monolayer CrI 3 by introducing I-vacancies and interstitial H-atoms. Phys Chem Chem Phys 2021; 23:22103-22109. [PMID: 34580685 DOI: 10.1039/d1cp03707b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The discovery of two-dimensional monolayer CrI3 provides a promising possibility for developing spintronic devices. However, the low Curie temperature is an obstacle for practical applications. Here, based on the consideration of the superexchange interaction of ferromagnetic coupling, we investigate the effect of introducing I-vacancies and interstitial H-atoms on the Curie temperature of monolayer CrI3 by using first-principles calculations and Monte Carlo simulations. Our theoretical conclusions show that the Curie temperature of Cr8I23 (CrI2.875), Cr8I22 (CrI2.75) and Cr8I24H (CrI3H0.125) significantly increases to 97.0, 82.5 and 112.4 K, respectively. Moreover, the magnetic moment of the Cr atom increases from 3.10 to 3.45 and 3.46μB in monolayers Cr8I23 and Cr8I22, respectively. We provide more alternative approaches to effectively enhance the Curie temperature of monolayer CrI3, which will help both theoretical and experimental researchers to directly predict the change in Curie temperature of CrI3 and its analogs through structural information.
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Affiliation(s)
- Wenxia Su
- National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory for Nanotechnology, and Department of Physics, Nanjing University, Nanjing 210093, China.
| | - Zhengming Zhang
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, Zhejiang, 310018, China
| | - Qingqi Cao
- National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory for Nanotechnology, and Department of Physics, Nanjing University, Nanjing 210093, China.
| | - Dunhui Wang
- National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory for Nanotechnology, and Department of Physics, Nanjing University, Nanjing 210093, China. .,School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, Zhejiang, 310018, China
| | - Haiming Lu
- College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Youwei Du
- National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory for Nanotechnology, and Department of Physics, Nanjing University, Nanjing 210093, China.
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35
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Chen Q, Liang J, Fang B, Zhu Y, Wang J, Lv W, Lv W, Cai J, Huang Z, Zhai Y, Zhang B, Zeng Z. Proximity effect of a two-dimensional van der Waals magnet Fe 3GeTe 2 on nickel films. NANOSCALE 2021; 13:14688-14693. [PMID: 34533556 DOI: 10.1039/d1nr03342e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recent advances in two-dimensional van der Waals (2D vdW) magnets provide new platforms to study their magnetism in reduced dimensions. However, most of the studies performed to date have been limited to low temperatures. Here, we report the proximity effect of a 2D vdW magnet Fe3GeTe2 (FGT) on nickel (Ni) films at room temperature. Ferromagnetic resonance measurements show that FGT can increase the perpendicular magnetic anisotropy (PMA) and magnetic damping of the adjacent Ni film. Such an interfacial effect is observed at room temperature, and becomes more pronounced as the temperature decreases. A similar effect is also achieved in another 2D heterostructure of Cr2Ge2Te6/Ni, implying its universality in a variety of 2D magnetic materials. Our work provides a new approach for utilizing 2D magnets in spintronics at room temperature.
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Affiliation(s)
- Qian Chen
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
| | - Jian Liang
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Bin Fang
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi, 330200, China
| | - Yonghui Zhu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Jiachen Wang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
| | - Weiming Lv
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi, 330200, China
| | - Wenxing Lv
- Physics Laboratory, Industrial Training Center, Shenzhen Polytechnic, Shenzhen, Guangdong, 518055, China
| | - Jialin Cai
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi, 330200, China
| | - Zhaocong Huang
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Ya Zhai
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Baoshun Zhang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
| | - Zhongming Zeng
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
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36
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Tursun M, Wu C. Vacancy-triggered and dopant-assisted NO electrocatalytic reduction over MoS 2. Phys Chem Chem Phys 2021; 23:19872-19883. [PMID: 34525138 DOI: 10.1039/d1cp02764f] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
Abstract
Nitric oxide electroreduction reaction (NOER) is an efficient method for NH3 synthesis and NOx-related pollutant treatment. However, current research on NOER catalysts mainly focuses on noble metals and single atom catalysts, while low-cost transition metal dichalcogenides (TMDCs) are rarely considered. Herein, by applying density functional theory (DFT) calculations, we study the catalytic performance of NOER over 2H-MoS2 monolayers with the most common S vacancies and some Mo atoms substituted by transition metal atoms (denoted as TM-MoS2@VS). Our results show that an S vacancy and a heteroatom substitution tend to form a first nearest neighbour (1NN) pair, which greatly improves the NOER catalytic performance of 2H-MoS2. The S vacancy site can trigger NOER by strongly adsorbing a NO molecule and elongating the NO bond, while the heteroatom dopant can assist NOER by tuning the electron donating capability of 2H-MoS2 which breaks the linear scaling relations among key reaction intermediates. At low NO coverage, NH3 can be correspondingly yielded at -0.06 and -0.38 V onset potentials over the Pt- and Au-doped MoS2 catalysts with S vacancies (Pt-MoS2@VS and Au-MoS2@VS). At high NO coverage, N2O/N2 is thermodynamically favored. Meanwhile, the competing hydrogen evolution reaction (HER) is suppressed. Thus, the Pt-MoS2@VS catalysts are promising candidates for NOER. In addition, coupling the substitutional doping of Mo atoms to S vacancies presents great potential in improving the catalytic activity and selectivity of MoS2 for other reactions. In general, the strategy of coupling hetero-metal doping and chalcogen vacancy can be extended to enhance the catalytic activity of other TMDCs.
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Affiliation(s)
- Mamutjan Tursun
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China. .,Xinjiang Laboratory of Native Medicinal and Edible Plant Resources Chemistry, College of Chemistry and Environmental Science, Kashgar University, Kashgar, Xinjiang, 844000, China
| | - Chao Wu
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China.
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37
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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38
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Vu VT, Vu TTH, Phan TL, Kang WT, Kim YR, Tran MD, Nguyen HTT, Lee YH, Yu WJ. One-Step Synthesis of NbSe 2/Nb-Doped-WSe 2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact. ACS NANO 2021; 15:13031-13040. [PMID: 34350752 DOI: 10.1021/acsnano.1c02038] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
van der Waals heterostructures (vdWHs) of metallic (m-) and semiconducting (s-) transition-metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field-effect transistor. However, in the current two-step chemical vapor deposition process, the synthesis of m-TMD on pregrown s-TMD contaminates the van der Waals (vdW) interface and hinders the doping of s-TMD. Here, NbSe2/Nb-doped-WSe2 metal-doped-semiconductor (M/d-S) vdWHs are created via a one-step synthesis approach using a niobium molar ratio-controlled solution-phase precursor. The one-step growth approach synthesizes Nb-doped WSe2 with a controllable doping concentration and metal/doped-semiconductor vdWHs. The hole carrier concentration can be precisely controlled by controlling the Nb/(W + Nb) molar ratio in the precursor solution from ∼3 × 1011/cm2 at Nb-0% to ∼1.38 × 1012/cm2 at Nb-60%; correspondingly, the contact resistance RC value decreases from 10 888.78 at Nb-0% to 70.60 kΩ.μm at Nb-60%. The Schottky barrier height measurement in the Arrhenius plots of ln(Isat/T2) versus q/KBT demonstrated an ohmic contact in the NbSe2/WxNb1-xSe2 vdWHs. Combining p-doping in WSe2 and M/d-S vdWHs, the mobility (27.24 cm2 V-1 s-1) and on/off ratio (2.2 × 107) are increased 1238 and 4400 times, respectively, compared to that using the Cr/pure-WSe2 contact (0.022 cm2 V-1 s-1 and 5 × 103, respectively). Together, the RC value using the NbSe2 contact shows 2.46 kΩ.μm, which is ∼29 times lower than that of using a metal contact. This method is expected to guide the synthesis of various M/d-S vdWHs and applications in future high-performance integrated circuits.
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Affiliation(s)
- Van Tu Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Thanh Huong Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Tae Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Rae Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Minh Dao Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Huong Thi Thanh Nguyen
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Lei J, Xie Y, Yakobson BI. Gas-Phase "Prehistory" and Molecular Precursors in Monolayer Metal Dichalcogenides Synthesis: The Case of MoS 2. ACS NANO 2021; 15:10525-10531. [PMID: 34105941 DOI: 10.1021/acsnano.1c03103] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional MoS2 is one of the most promising materials for nanoelectronics due to its semiconducting nature and plethora of extraordinary properties. The main method for mass production of large-scale, high-quality MoS2 monolayers is chemical vapor deposition (CVD). Yet, the details of the chemistry occurring during the synthesis remain largely unknown, hindering process optimization. Combining ab initio molecular dynamics (AIMD) simulations and first-principles calculations allows us to explore the complete processes of MoS2 monolayer growth at the atomic level. We find that solid MoO3 precursor sublimates forming ringlike molecules, such as Mo3O9, which can later be regarded as gas-phase Mo-carrier reactants, undergoing sulfurization in three main stages: ring opening, chain breaking as the rate-limiting step, and further sulfurization. The fully sulfurized MoS6 molecule emerges as an immediate gas precursor to the crystal growth, as it reacts to join the MoS2-layer edge, with the release of a S4 molecule. Our comprehensive study provides detailed insights into the microscopic reaction mechanisms of MoS2 CVD growth and guidance for optimizing the synthesis parameters for transition metal dichalcogenides.
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Affiliation(s)
- Jincheng Lei
- Department of Materials Science & NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Yu Xie
- Department of Materials Science & NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Boris I Yakobson
- Department of Materials Science & NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
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40
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Liu H, Fu D, Li X, Han J, Chen X, Wu X, Sun B, Tang W, Ke C, Wu Y, Wu Z, Kang J. Enhanced Valley Splitting in Monolayer WSe 2 by Phase Engineering. ACS NANO 2021; 15:8244-8251. [PMID: 33982558 DOI: 10.1021/acsnano.0c08305] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Lifting the valley degeneracy in two-dimensional transition metal dichalcogenides could promote their applications in information processing. Various external regulations, including magnetic substrate, magnetic doping, electric field, and carrier doping, have been implemented to enhance the valley splitting under the magnetic field. Here, a phase engineering strategy, through modifying the intrinsic lattice structure, is proposed to enhance the valley splitting in monolayer WSe2. The valley splitting in hybrid H and T phase WSe2 is tunable by the concentration of the T phase. An obvious valley splitting of ∼4.1 meV is obtained with the T phase concentration of 31% under ±5 T magnetic fields, which corresponds to an effective Landé geff factor of -14, about 3.5-fold of that in pure H-WSe2. Comparing the temperature and magnetic field dependent polarized photoluminescence and also combining the theoretical simulations reveal the enhanced valley splitting is dominantly attributed to exchange interaction of H phase WSe2 with the local magnetic moments induced by the T phase. This finding provides a convenient solution for lifting the valley degeneracy of two-dimensional materials.
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Affiliation(s)
- Haiyang Liu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Deyi Fu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junbo Han
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiaodie Chen
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xuefeng Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Baofan Sun
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Weiqing Tang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Congming Ke
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
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He H, Li X, Huang D, Luan J, Liu S, Pang WK, Sun D, Tang Y, Zhou W, He L, Zhang C, Wang H, Guo Z. Electron-Injection-Engineering Induced Phase Transition toward Stabilized 1T-MoS 2 with Extraordinary Sodium Storage Performance. ACS NANO 2021; 15:8896-8906. [PMID: 33970601 DOI: 10.1021/acsnano.1c01518] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Phase transition engineering, with the ability to alter the electronic structure and physicochemical properties of materials, has been widely used to achieve the thermodynamically unstable metallic phase MoS2 (1T-MoS2), although the complex operating conditions and low yield of previous strategies make the large-scale fabrication of 1T-MoS2 a big challenge. Herein, we report a facile electron injection strategy for phase transition engineering and fabricate a composite of conductive TiO chemically bonded to 1T-MoS2 nanoflowers (TiO-1T-MoS2 NFs) on a large scale. The underlying mechanism analysis reveals that electron-injection-engineering triggers a reorganization of the Mo 4d orbitals and results in a 100% phase transition of MoS2 from 2H to 1T. In the TiO-1T-MoS2 NFs composite, the 1T-MoS2 demonstrates a higher electronic conductivity, a lower Na+ diffusion barrier, and a more restricted S release than 2H-MoS2. In addition, conductive TiO bonding successfully resolves the stability challenge of the 1T phase. These merits endow TiO-1T-MoS2 NFs electrodes with an excellent rate capability (650/288 mAh g-1 at 50/20 000 mA g-1, respectively) and an outstanding cyclability (501 mAh g-1 at 1000 mA g-1 after 700 cycles) in sodium ion batteries. Such an improvement signifies that this facile and scalable phase-transition engineering combined with a deep mechanism analysis offers an important reference for designing advanced materials for various applications.
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Affiliation(s)
- Hanna He
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu 610065, P. R. China
| | - Xiaolong Li
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu 610065, P. R. China
- Institute for Superconducting & Electronic Materials, School of Mechanical, Materials, Mechatronics, and Biomedical Engineering, University of Wollongong, Wollongong 2500, New South Wales, Australia
| | - Dan Huang
- Guangxi Key Laboratory for Relativistic Astrophysics, Guangxi Colleges and Universities Key Laboratory of Novel Energy Materials and Related Technology, Guangxi Novel Battery Materials Research Center of Engineering Technology, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
| | - Jinyi Luan
- Hunan Provincial Key Laboratory of Chemical Power Sources, Hunan Provincial Key Laboratory of Efficient and Clean Utilization of Manganese Resources, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, P. R. China
| | - Sailin Liu
- Institute for Superconducting & Electronic Materials, School of Mechanical, Materials, Mechatronics, and Biomedical Engineering, University of Wollongong, Wollongong 2500, New South Wales, Australia
| | - Wei Kong Pang
- Institute for Superconducting & Electronic Materials, School of Mechanical, Materials, Mechatronics, and Biomedical Engineering, University of Wollongong, Wollongong 2500, New South Wales, Australia
| | - Dan Sun
- Hunan Provincial Key Laboratory of Chemical Power Sources, Hunan Provincial Key Laboratory of Efficient and Clean Utilization of Manganese Resources, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, P. R. China
| | - Yougen Tang
- Hunan Provincial Key Laboratory of Chemical Power Sources, Hunan Provincial Key Laboratory of Efficient and Clean Utilization of Manganese Resources, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, P. R. China
| | - Wenzheng Zhou
- Guangxi Key Laboratory for Relativistic Astrophysics, Guangxi Colleges and Universities Key Laboratory of Novel Energy Materials and Related Technology, Guangxi Novel Battery Materials Research Center of Engineering Technology, School of Physical Science and Technology, Guangxi University, Nanning 530004, P. R. China
| | - Lirong He
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu 610065, P. R. China
| | - Chuhong Zhang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu 610065, P. R. China
| | - Haiyan Wang
- Hunan Provincial Key Laboratory of Chemical Power Sources, Hunan Provincial Key Laboratory of Efficient and Clean Utilization of Manganese Resources, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, P. R. China
| | - Zaiping Guo
- School of Chemical Engineering & Advanced Materials, The University of Adelaide, Adelaide 5005, SA, Australia
- Institute for Superconducting & Electronic Materials, School of Mechanical, Materials, Mechatronics, and Biomedical Engineering, University of Wollongong, Wollongong 2500, New South Wales, Australia
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Lin Y, Torsi R, Geohegan DB, Robinson JA, Xiao K. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004249. [PMID: 33977064 PMCID: PMC8097379 DOI: 10.1002/advs.202004249] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Revised: 12/06/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.
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Affiliation(s)
- Yu‐Chuan Lin
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Riccardo Torsi
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - David B. Geohegan
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Joshua A. Robinson
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Two‐Dimensional Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Kai Xiao
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
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Xu J, Srolovitz DJ, Ho D. The Adatom Concentration Profile: A Paradigm for Understanding Two-Dimensional MoS 2 Morphological Evolution in Chemical Vapor Deposition Growth. ACS NANO 2021; 15:6839-6848. [PMID: 33750113 DOI: 10.1021/acsnano.0c10474] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The two-dimensional (2D) transition metal dichalcogenide (TMD) MoS2 possesses many intriguing electronic and optical properties. Potential technological applications have focused much attention on tuning MoS2 properties through control of its morphologies during growth. In this paper, we present a unified spatial-temporal model for the growth of MoS2 crystals with a full spectrum of shapes from triangles, concave triangles, three-point stars, to dendrites through the concept of the adatom concentration profile (ACP). We perform a series of chemical vapor deposition (CVD) experiments controlling adatom concentration on the substrate and growth temperature and present a method for experimentally measuring the ACP in the vicinity of growing islands. We apply a phase-field model of growth that explicitly considers similar variables (adatom concentration, adatom diffusion, and noise effects) and cross-validate the simulations and experiments through the ACP and island morphologies as a function of physically controllable variables. Our calculations reproduce the experimental observations with high fidelity. The ACP is an alternative paradigm to conceptualize the growth of crystals through time, which is expected to be instrumental in guiding the rational shape engineering of MoS2 crystals.
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Affiliation(s)
- Jiangang Xu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - David J Srolovitz
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Derek Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
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Zou J, Cai Z, Lai Y, Tan J, Zhang R, Feng S, Wang G, Lin J, Liu B, Cheng HM. Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors. ACS NANO 2021; 15:7340-7347. [PMID: 33764052 DOI: 10.1021/acsnano.1c00596] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.
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Affiliation(s)
- Jingyun Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Gang Wang
- Department of Physics, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Junhao Lin
- Department of Physics, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
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Adhikary S, Dutta S, Mohakud S. Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP 3. NANOSCALE ADVANCES 2021; 3:2217-2221. [PMID: 36133774 PMCID: PMC9417914 DOI: 10.1039/d1na00101a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2021] [Accepted: 03/20/2021] [Indexed: 06/16/2023]
Abstract
Magnetism in low-dimensional materials has been of sustained interest due to its intriguing quantum mechanical origin and promising device applications. Here, we propose a buckled honeycomb lattice of stoichiometry SiP3, a two-dimensional binary group-IV and V material that exhibits an antiferromagnetic ground state with itinerant electrons. Here we perform elemental Si substitution in pristine blue phosphorene to downshift the Fermi energy and induce the Fermi instability that results in a spin polarized ground state. Within first-principles calculations, we observe antiferromagnetic spin alignment between adjacent ferromagnetic triangular domains where each Si atom is coupled with three neighboring P atoms with a ferromagnetic interaction. Such unique spin structure and resulting magnetic ground state are unprecedented in defect-free two-dimensional materials made of only p-block elements. This metal-free magnetism can be exploited for advanced spintronic and memory storage applications.
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Affiliation(s)
- Souren Adhikary
- Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati Tirupati - 517507 Andhra Pradesh India
| | - Sudipta Dutta
- Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati Tirupati - 517507 Andhra Pradesh India
- Center for Atomic, Molecular and Optical Sciences & Technologies, Indian Institute of Science Education and Research (IISER) Tirupati Tirupati - 517507 Andhra Pradesh India
| | - Sasmita Mohakud
- Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati Tirupati - 517507 Andhra Pradesh India
- Center for Atomic, Molecular and Optical Sciences & Technologies, Indian Institute of Science Education and Research (IISER) Tirupati Tirupati - 517507 Andhra Pradesh India
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Taffelli A, Dirè S, Quaranta A, Pancheri L. MoS 2 Based Photodetectors: A Review. SENSORS (BASEL, SWITZERLAND) 2021; 21:2758. [PMID: 33919731 PMCID: PMC8070690 DOI: 10.3390/s21082758] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 03/30/2021] [Accepted: 04/08/2021] [Indexed: 12/16/2022]
Abstract
Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light-matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.
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Affiliation(s)
- Alberto Taffelli
- Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento, Italy; (S.D.); (A.Q.); (L.P.)
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Hu L, Cao L, Li L, Duan J, Liao X, Long F, Zhou J, Xiao Y, Zeng YJ, Zhou S. Two-dimensional magneto-photoconductivity in non-van der Waals manganese selenide. MATERIALS HORIZONS 2021; 8:1286-1296. [PMID: 34821921 DOI: 10.1039/d1mh00009h] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Deficient intrinsic species and suppressed Curie temperatures (Tc) in two-dimensional (2D) magnets are major barriers for future spintronic applications. As an alternative, delaminating non-van der Waals (vdW) magnets can offset these shortcomings and involve robust bandgaps to explore 2D magneto-photoconductivity at ambient temperature. Herein, non-vdW α-MnSe2 is first delaminated as quasi-2D nanosheets for the study of emerging semiconductor, ferromagnetism and magneto-photoconductivity behaviors. Abundant nonstoichiometric surfaces induce the renormalization of the band structure and open a bandgap of 1.2 eV. The structural optimization strengthens ferromagnetic super-exchange interactions between the nearest-neighbor Mn2+, which enables us to achieve a high Tc of 320 K well above room temperature. The critical fitting of magnetization and transport measurements both verify that it is of quasi-2D nature. The above observations are evidenced by multiple microscopic and macroscopic characterization tools, in line with the prediction of first-principles calculations. Profiting from the negative magnetoresistance effect, the self-powered infrared magneto-photoconductivity performance including a responsivity of 330.4 mA W-1 and a millisecond-level response speed are further demonstrated. Such merits stem from the synergistic modulation of magnetic and light fields on photogenerated carriers. This provides a new strategy to manipulate both charge and spin in 2D non-vdW systems and displays their alluring prospects in magneto-photodetection.
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Affiliation(s)
- Liang Hu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
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48
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Enhanced Electrical Performance of Monolayer MoS 2 with Rare Earth Element Sm Doping. NANOMATERIALS 2021; 11:nano11030769. [PMID: 33803612 PMCID: PMC8002856 DOI: 10.3390/nano11030769] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2021] [Revised: 03/09/2021] [Accepted: 03/16/2021] [Indexed: 11/17/2022]
Abstract
Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS2 film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS2 was achieved. The threshold voltage of an Sm-doped MoS2-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS2. Additionally, the electrical performance of the monolayer MoS2-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS2, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.
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Lin YC, Karthikeyan J, Chang YP, Li S, Kretschmer S, Komsa HP, Chiu PW, Krasheninnikov AV, Suenaga K. Formation of Highly Doped Nanostripes in 2D Transition Metal Dichalcogenides via a Dislocation Climb Mechanism. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007819. [PMID: 33604926 DOI: 10.1002/adma.202007819] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Revised: 12/21/2020] [Indexed: 06/12/2023]
Abstract
Doping of materials beyond the dopant solubility limit remains a challenge, especially when spatially nonuniform doping is required. In 2D materials with a high surface-to-volume ratio, such as transition metal dichalcogenides, various post-synthesis approaches to doping have been demonstrated, but full control over spatial distribution of dopants remains a challenge. A post-growth doping of single layers of WSe2 is performed by adding transition metal (TM) atoms in a two-step process, which includes annealing followed by deposition of dopants together with Se or S. The Ti, V, Cr, and Fe impurities at W sites are identified by using transmission electron microscopy and electron energy loss spectroscopy. Remarkably, an extremely high density (6.4-15%) of various types of impurity atoms is achieved. The dopants are revealed to be largely confined within nanostripes embedded in the otherwise pristine WSe2 . Density functional theory calculations show that the dislocations assist the incorporation of the dopant during their climb and give rise to stripes of TM dopant atoms. This work demonstrates a possible spatially controllable doping strategy to achieve the desired local electronic, magnetic, and optical properties in 2D materials.
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Affiliation(s)
- Yung-Chang Lin
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Jeyakumar Karthikeyan
- Department of Applied Physics, Aalto University, P. O. Box 11100, Aalto, 00076, Finland
- Department of Basic Sciences and Humanities, Rajiv Gandhi Institute of Petroleum Technology, Jais, Amethi, Uttar Pradesh, 229304, India
| | - Yao-Pang Chang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
| | - Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Hannu-Pekka Komsa
- Department of Applied Physics, Aalto University, P. O. Box 11100, Aalto, 00076, Finland
- Microelectronics Research Unit, University of Oulu, P. O. Box 8000, Oulu, 90014, Finland
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Arkady V Krasheninnikov
- Department of Applied Physics, Aalto University, P. O. Box 11100, Aalto, 00076, Finland
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Kazu Suenaga
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
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50
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Och M, Martin MB, Dlubak B, Seneor P, Mattevi C. Synthesis of emerging 2D layered magnetic materials. NANOSCALE 2021; 13:2157-2180. [PMID: 33475647 DOI: 10.1039/d0nr07867k] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.
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Affiliation(s)
- Mauro Och
- Department of Materials, Imperial College London, SW72AZ London, UK.
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, SW72AZ London, UK.
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