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Dai X, Qiu C, Bi X, Sui C, Chen P, Qin F, Yuan H. Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13980-13988. [PMID: 38446715 DOI: 10.1021/acsami.3c19091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
The anisotropic thermal transport properties of low-symmetry two-dimensional materials play an important role in understanding heat dissipation and optimizing thermal management in integrated devices. Examples of efficient energy dissipation and enhanced power sustainability have been demonstrated in nanodevices based on materials with anisotropic thermal transport properties. However, the exploration of materials with high thermal conductivity and strong in-plane anisotropy remains challenging. Herein, we demonstrate the observation of anisotropic in-plane thermal conductivities of few-layer SiP2 based on the micro-Raman thermometry method. For suspended SiP2 nanoflake, the thermal conductivity parallel to P-P chain direction (κ∥b) can reach 131 W m-1 K-1 and perpendicular to P-P chain direction (κ⊥b) is 89 W m-1 K-1 at room temperature, resulting in a significant anisotropic ratio (κ∥b/κ⊥b) of 1.47. Note that such a large anisotropic ratio mainly results from the higher phonon group velocity along the P-P chain direction. We also found that the thermal conductivity can be effectively modulated by increasing the SiP2 thickness, reaching a value as high as 202 W m-1 K-1 (120 W m-1 K-1) for κ∥b (κ⊥b) at 111 nm thickness, which is the highest among layered anisotropic phosphide materials. Notably, the anisotropic ratio always remains at a high level between 1.47 and 1.68, regardless of the variation of SiP2 thickness. Our observation provides a new platform to verify the fundamental theory of thermal transport and a crucial guidance for designing efficient thermal management schemes of anisotropic electronic devices.
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Affiliation(s)
- Xueting Dai
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Chengqi Sui
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
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2
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Mahendran S, Carrete J, Isacsson A, Madsen GKH, Erhart P. Quantitative Predictions of the Thermal Conductivity in Transition Metal Dichalcogenides: Impact of Point Defects in MoS 2 and WS 2 Monolayers. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:1709-1716. [PMID: 38322774 PMCID: PMC10839904 DOI: 10.1021/acs.jpcc.3c06820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 12/25/2023] [Accepted: 12/27/2023] [Indexed: 02/08/2024]
Abstract
Transition metal dichalcogenides are investigated for various applications at the nanoscale because of their unique combination of properties and dimensionality. For many of the anticipated applications, heat conduction plays an important role. At the same time, these materials often contain relatively large amounts of point defects. Here, we provide a systematic analysis of the impact of intrinsic and selected extrinsic defects on the lattice thermal conductivity of MoS2 and WS2 monolayers. We combine Boltzmann transport theory and Green's function-based T-matrix approach for the calculation of scattering rates. The force constants for the defect configurations are obtained from density functional theory calculations via a regression approach, which allows us to sample a rather large number of defects at a moderate computational cost and to systematically enforce both the translational and rotational acoustic sum rules. The calculated lattice thermal conductivity is in quantitative agreement with the experimental data for heat transport and defect concentrations for both MoS2 and WS2. Crucially, this demonstrates that the strong deviation from a 1/T temperature dependence of the lattice thermal conductivity observed experimentally can be fully explained by the presence of point defects. We furthermore predict the scattering strengths of the intrinsic defects to decrease in the sequence VMo ≈ V2S= > V2S⊥ > VS > Sad in both materials, while the scattering rates for the extrinsic (adatom) defects decrease with increasing mass such that Liad > Naad > Kad. Compared with earlier work, we find that both intrinsic and extrinsic adatoms are relatively weak scatterers. We attribute this difference to the treatment of the translational and rotational acoustic sum rules, which, if not enforced, can lead to spurious contributions in the zero-frequency limit.
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Affiliation(s)
- Srinivasan Mahendran
- Department
of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
| | - Jesús Carrete
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, E-50009 Zaragoza, Spain
- Institute
of Materials Chemistry, TU Wien, A-1060 Vienna, Austria
| | - Andreas Isacsson
- Department
of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
| | | | - Paul Erhart
- Department
of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
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3
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Bandyopadhyay AS, Puthirath AB, Ajayan PM, Zhu H, Lin Y, Kaul AB. Intrinsic and Strain-Dependent Properties of Suspended WSe 2 Crystallites toward Next-Generation Nanoelectronics and Quantum-Enabled Sensors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3640-3653. [PMID: 38268147 DOI: 10.1021/acsami.3c13603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Two-dimensional (2D) layered materials exhibit great potential for high-performance electronics, where knowledge of their thermal and phononic properties is critical toward understanding heat dissipation mechanisms, considered to be a major bottleneck for current generation nanoelectronic, optoelectronic, and quantum-scale devices. In this work, noncontact Raman spectroscopy was used to analyze thermal properties of suspended 2D WSe2 membranes to access the intrinsic properties. Here, the influence of electron-phonon interactions within the parent crystalline WSe2 membranes was deciphered through a comparative analysis of extrinsic substrate-supported WSe2, where heat dissipation mechanisms are intimately tied to the underlying substrate. Moreover, the excitonic states in WSe2 were analyzed by using temperature-dependent photoluminescence spectroscopy, where an enhancement in intensity of the localized excitons in suspended WSe2 was evident. Finally, phononic and electronic properties in suspended WSe2 were examined through nanoscale local strain engineering, where a uniaxial force was induced on the membrane using a Au-coated cantilever within an atomic force microscope. Through the fundamental analysis provided here with temperature and strain-dependent phononic and optoelectronic properties in suspended WSe2 nanosheets, the findings will inform the design of next-generation energy-efficient, high-performance devices based on WSe2 and other 2D materials, including for quantum applications.
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Affiliation(s)
- Avra S Bandyopadhyay
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76207, United States
| | - Anand B Puthirath
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Hanyu Zhu
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, Texas 76201, United States
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76207, United States
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76207, United States
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4
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Sabbaghi S, Bazargan V, Hosseinian E. Defect engineering for thermal transport properties of nanocrystalline molybdenum diselenide. NANOSCALE 2023; 15:12634-12647. [PMID: 37462987 DOI: 10.1039/d3nr01839c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2023]
Abstract
Molybdenum diselenide (MoSe2) is attracting great attention as a transition metal dichalcogenide (TMDC) due to its unique applications in micro-electronics and beyond. In this study, the role of defects in the thermal transport properties of single-layer MoSe2 is investigated using non-equilibrium molecular dynamics (NEMD) simulations. Specifically, this work quantifies how different microstructural defects such as vacancies and grain boundaries (GBs) and their concentration (N) alter the thermal conductivity (TC) of single crystal and nanocrystalline MoSe2. These results show a significant drop in thermal conductivity as the concentration of defects increases. Specifically, point defects lower the TC of MoSe2 in the form of N-β where β is 0.5, 0.48 and 0.36 for VMo, VMo-Se and VSe vacancies, respectively. This study also examines the impact of grain boundaries on the thermal conductivity of nanocrystalline MoSe2. These results suggest that GB migration and stress-assisted twinning along with localized phase transformation (2H to 1T) are the primary factors affecting the thermal conductivity of nanocrystalline MoSe2. Based on MD simulations, TC of polycrystalline MoSe2 increases with the average grain size (d̄) in the form of d̄4.5. For example, the TC of nanocrystalline MoSe2 with d̄ = 11 nm is around 40% lower than the TC of the pristine monocrystalline sample with the same dimensions. Finally, the influence of sample size and temperature is studied to determine the sensitivity of quantitative thermal properties to the length scale and phonon scattering, respectively. The results of this work could provide valuable insights into the role of defects in engineering the thermal properties of next generation semiconductor-based devices.
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Affiliation(s)
- Soroush Sabbaghi
- Department of Mechanical Engineering, University of Tehran, Tehran, Iran.
| | - Vahid Bazargan
- Department of Mechanical Engineering, University of Tehran, Tehran, Iran.
| | - Ehsan Hosseinian
- Department of Mechanical Engineering, University of Tehran, Tehran, Iran.
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5
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Gupta JD, Jangra P, Majee BP, Mishra AK. Morphological dependent exciton dynamics and thermal transport in MoSe 2 films. NANOSCALE ADVANCES 2023; 5:2756-2766. [PMID: 37205289 PMCID: PMC10187041 DOI: 10.1039/d3na00164d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 04/11/2023] [Indexed: 05/21/2023]
Abstract
Thermal transport and exciton dynamics of semiconducting transition metal dichalcogenides (TMDCs) play an immense role in next-generation electronic, photonic, and thermoelectric devices. In this work, we synthesize distinct morphologies (snow-like and hexagonal) of a trilayer MoSe2 film over the SiO2/Si substrate via the chemical vapor deposition (CVD) method and investigated their morphological dependent exciton dynamics and thermal transport behaviour for the first time to the best of our knowledge. Firstly, we studied the role of spin-orbit and interlayer couplings both theoretically as well as experimentally via first-principles density functional theory and photoluminescence study, respectively. Further, we demonstrate morphological dependent thermal sensitive exciton response at low temperatures (93-300 K), showing more dominant defect-bound excitons (EL) in snow-like MoSe2 compared to hexagonal morphology. We also examined the morphological-dependent phonon confinement and thermal transport behaviour using the optothermal Raman spectroscopy technique. To provide insights into the nonlinear temperature-dependent phonon anharmonicity, a semi-quantitative model comprising volume and temperature effects was used, divulging the dominance of three-phonon (four-phonon) scattering processes for thermal transport in hexagonal (snow-like) MoSe2. The morphological impact on thermal conductivity (ks) of MoSe2 has also been examined here by performing the optothermal Raman spectroscopy, showing ks ∼ 36 ± 6 W m-1 K-1 for snow-like and ∼41 ± 7 W m-1 K-1 for hexagonal MoSe2. Our research will contribute to the understanding of thermal transport behaviour in different morphologies of semiconducting MoSe2, finding suitability for next-generation optoelectronic devices.
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Affiliation(s)
- Jay Deep Gupta
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
| | - Priyanka Jangra
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
| | - Bishnu Pada Majee
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
| | - Ashish Kumar Mishra
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
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6
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Szabo GL, Jany BR, Muckenhuber H, Niggas A, Lehner M, Janas A, Szabo PS, Gan Z, George A, Turchanin A, Krok F, Wilhelm RA. Charge-State-Enhanced Ion Sputtering of Metallic Gold Nanoislands. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2207263. [PMID: 36949495 DOI: 10.1002/smll.202207263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 02/15/2023] [Indexed: 06/18/2023]
Abstract
Experimental results on the charge-state-dependent sputtering of metallic gold nanoislands are presented. Irradiations with slow highly charged ions of metallic targets were previously considered to show no charge state dependent effects on ion-induced material modification, since these materials possess enough free electrons to dissipate the deposited potential energy before electron-phonon coupling can set in. By reducing the size of the target material down to the nanometer regime and thus enabling a geometric energy confinement, a possibility is demonstrated to erode metallic surfaces by charge state related effects in contrast to regular kinetic sputtering.
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Affiliation(s)
- Gabriel L Szabo
- TU Wien, Institute of Applied Physics, 1040, Vienna, Austria
| | - Benedykt R Jany
- Marian Smoluchowski Institute of Physics Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Lojasiewicza 11, 30348, Kraków, Poland
| | | | - Anna Niggas
- TU Wien, Institute of Applied Physics, 1040, Vienna, Austria
| | - Markus Lehner
- TU Wien, Institute of Applied Physics, 1040, Vienna, Austria
| | - Arkadiusz Janas
- Marian Smoluchowski Institute of Physics Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Lojasiewicza 11, 30348, Kraków, Poland
| | - Paul S Szabo
- University of California, Space Sciences Laboratory, Berkeley, 94720, USA
| | - Ziyang Gan
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
| | - Antony George
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
| | - Andrey Turchanin
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
| | - Franciszek Krok
- Marian Smoluchowski Institute of Physics Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Lojasiewicza 11, 30348, Kraków, Poland
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7
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Ye F, Liu Q, Xu B, Feng PXL, Zhang X. Ultra-High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205726. [PMID: 36748291 DOI: 10.1002/smll.202205726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Revised: 12/16/2022] [Indexed: 06/18/2023]
Abstract
Heat dissipation is a major limitation of high-performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra-thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra-high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single-layer transition metal dichalcogenides MX2 (MoS2 , WSe2 , WS2 ) sandwiched between two hexagonal boron nitride (hBN) layers is reported. Through Raman spectroscopic measurements of suspended and substrate-supported hBN/MX2 /hBN heterostructures with varying laser power and temperature, the out-of-plane interfacial thermal conductance in the vertical stack is calibrated. The measured interfacial thermal conductance between MX2 and hBN reaches 74 ± 25 MW m-2 K-1 , which is at least ten times higher than the interfacial thermal conductance of MX2 in non-encapsulation structures. Molecular dynamics (MD) calculations verify and explain the experimental results, suggesting a full encapsulation by hBN layers is accounting for the high interfacial conductance. This ultra-high interfacial thermal conductance is attributed to the double heat transfer pathways and the clean and tight vdW interface between two crystalline 2D materials. The findings in this study reveal new thermal transport mechanisms in hBN/MX2 /hBN structures and shed light on building novel hBN-encapsulated nanoelectronic devices with enhanced thermal management.
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Affiliation(s)
- Fan Ye
- Department of Electrical, Computer, & Systems Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA
| | - Qingchang Liu
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Baoxing Xu
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Philip X-L Feng
- Department of Electrical, Computer, & Systems Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Xian Zhang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
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8
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Alsulami A, Alharbi M, Alsaffar F, Alolaiyan O, Aljalham G, Albawardi S, Alsaggaf S, Alamri F, Tabbakh TA, Amer MR. Lattice Transformation from 2D to Quasi 1D and Phonon Properties of Exfoliated ZrS 2 and ZrSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205763. [PMID: 36585385 DOI: 10.1002/smll.202205763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Recent reports on thermal and thermoelectric properties of emerging 2D materials have shown promising results. Among these materials are Zirconium-based chalcogenides such as zirconium disulfide (ZrS2 ), zirconium diselenide (ZrSe2 ), zirconium trisulfide (ZrS3 ), and zirconium triselenide (ZrSe3 ). Here, the thermal properties of these materials are investigated using confocal Raman spectroscopy. Two different and distinctive Raman signatures of exfoliated ZrX2 (where X = S or Se) are observed. For 2D-ZrX2 , Raman modes are in alignment with those reported in literature. However, for quasi 1D-ZrX2 , Raman modes are identical to exfoliated ZrX3 nanosheets, indicating a major lattice transformation from 2D to quasi-1D. Raman temperature dependence for ZrX2 are also measured. Most Raman modes exhibit a linear downshift dependence with increasing temperature. However, for 2D-ZrS2 , a blueshift for A1g mode is detected with increasing temperature. Finally, phonon dynamics under optical heating for ZrX2 are measured. Based on these measurements, the calculated thermal conductivity and the interfacial thermal conductance indicate lower interfacial thermal conductance for quasi 1D-ZrX2 compared to 2D-ZrX2 , which can be attributed to the phonon confinement in 1D. The results demonstrate exceptional thermal properties for Zirconium-based materials, making them ideal for thermoelectric device applications and future thermal management strategies.
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Affiliation(s)
- Awsaf Alsulami
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Majed Alharbi
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Fadhel Alsaffar
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Olaiyan Alolaiyan
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Ghadeer Aljalham
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Shahad Albawardi
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Sarah Alsaggaf
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Faisal Alamri
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Thamer A Tabbakh
- National Center for Nanotechnology, Materials Science Institute, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Moh R Amer
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA
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9
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Jiang S, Lebedev D, Andrews L, Gish JT, Song TW, Hersam MC, Balogun O. Quantitative Characterization of the Anisotropic Thermal Properties of Encapsulated Two-Dimensional MoS 2 Nanofilms. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10123-10132. [PMID: 36753465 DOI: 10.1021/acsami.2c18755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) semiconductors exhibit unique physical properties at the limit of a few atomic layers that are desirable for optoelectronic, spintronic, and electronic applications. Some of these materials require ambient encapsulation to preserve their properties from environmental degradation. While encapsulating 2D semiconductors is essential to device functionality, they also impact heat management due to the reduced thermal conductivity of the 2D material. There are limited experimental reports on in-plane thermal conductivity measurements in encapsulated 2D semiconductors. These measurements are particularly challenging in ultrathin films with a lower thermal conductivity than graphene since it may be difficult to separate the thermal effects of the sample from the encapsulating layers. To address this challenge, we integrated the frequency domain thermoreflectance (FDTR) and optothermal Raman spectroscopy (OTRS) techniques in the same experimental platform. First, we use the FDTR technique to characterize the cross-plane thermal conductivity and thermal boundary conductance. Next, we measure the in-plane thermal conductivity by model-based analysis of the OTRS measurements, using the cross-plane properties obtained from the FDTR measurements as input parameters. We provide experimental data for the first time on the thickness-dependent in-plane thermal conductivity of ultrathin MoS2 nanofilms encapsulated by alumina (Al2O3) and silica (SiO2) thin films. The measured thermal conductivity increased from 26.0 ± 10.0 W m-1 K-1 for monolayer MoS2 to 39.8 ± 10.8 W m-1 K-1 for the six-layer films. We also show that the thickness-dependent cross-plane thermal boundary conductance of the Al2O3/MoS2/SiO2 interface is limited by the low thermal conductance (18.5 MW m-2 K-1) of the MoS2/SiO2 interface, which has important implications on heat management in SiO2-supported and encased MoS2 devices. The measurement methods can be generalized to other 2D materials to study their anisotropic thermal properties.
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Affiliation(s)
- Shizhou Jiang
- Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Loren Andrews
- Department of Chemistry, Bates College, Lewiston, Maine 04240, United States
| | - J Tyler Gish
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Thomas W Song
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Oluwaseyi Balogun
- Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Civil and Environmental Engineering, Northwestern University, Evanston, Illinois 60208, United States
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10
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Wang Q, Zhang J, Xiong Y, Li S, Chernysh V, Liu X. Atomic-Scale Surface Engineering for Giant Thermal Transport Enhancement Across 2D/3D van der Waals Interfaces. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3377-3386. [PMID: 36608269 DOI: 10.1021/acsami.2c20717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Heat dissipation in two-dimensional (2D) material-based electronic devices is a critical issue for their applications. The bottleneck for this thermal issue is inefficient for heat removal across the van der Waals (vdW) interface between the 2D material and its supporting three-dimensional (3D) substrate. In this work, we demonstrate that an atomic-scale thin amorphous layer atop the substrate surface can remarkably enhance the interfacial thermal conductance (ITC) of the 2D-MoS2/3D-GaN vdW interface by a factor of 4 compared to that of the untreated crystalline substrate surface. Meanwhile, the ITC can be broadly manipulated through adjusting substrate surface roughness. Phonon dynamic and heat flux spectrum analyses show that this giant enhancement is attributed to the increased phonon densities and channels at the interfaces and enhanced phonon coupling. The slight surface fluctuation in MoS2 and the increased diffuse interfacial scattering facilitate energy transfer from MoS2's in-plane phonons to its out-of-plane phonons and then to the substrate. In addition, it is further found that the substrate and its surface topology can dramatically influence the thermal conductivity of MoS2 due to the reduction of phonon relaxation time, especially for low-frequency acoustic phonons. This study elucidates the effects of the amorphous surface of the substrate on thermal transport across 2D/3D vdW interfaces and provides a new dimension to aid in the heat dissipation of 2D-based electronic devices via atomic-scale surface engineering.
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Affiliation(s)
- Quanjie Wang
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai201620, China
| | - Jie Zhang
- Institute of Artificial Intelligence, Donghua University, Shanghai201620, China
| | - Yucheng Xiong
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, Donghua University, Shanghai201620, China
| | - Shouhang Li
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, Donghua University, Shanghai201620, China
| | - Vladimir Chernysh
- Department of Physical Electronics, Lomonosov Moscow State University, Moscow119991, Russia
| | - Xiangjun Liu
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai201620, China
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11
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Kalantari MH, Zhang X. Thermal Transport in 2D Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:nano13010117. [PMID: 36616026 PMCID: PMC9824888 DOI: 10.3390/nano13010117] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/12/2023]
Abstract
In recent decades, two-dimensional materials (2D) such as graphene, black and blue phosphorenes, transition metal dichalcogenides (e.g., WS2 and MoS2), and h-BN have received illustrious consideration due to their promising properties. Increasingly, nanomaterial thermal properties have become a topic of research. Since nanodevices have to constantly be further miniaturized, thermal dissipation at the nanoscale has become one of the key issues in the nanotechnology field. Different techniques have been developed to measure the thermal conductivity of nanomaterials. A brief review of 2D material developments, thermal conductivity concepts, simulation methods, and recent research in heat conduction measurements is presented. Finally, recent research progress is summarized in this article.
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12
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Song S, Oh I, Jang S, Yoon A, Han J, Lee Z, Yoo JW, Kwon SY. Air-stable van der Waals PtTe 2 conductors with high current-carrying capacity and strong spin-orbit interaction. iScience 2022; 25:105346. [PMID: 36345340 PMCID: PMC9636052 DOI: 10.1016/j.isci.2022.105346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 09/26/2022] [Accepted: 10/11/2022] [Indexed: 11/09/2022] Open
Abstract
High-performance van der Waals (vdW) integrated electronics and spintronics require reliable current-carrying capacity. However, it is challenging to achieve high current density and air-stable performance using vdW metals owing to the fast electrical breakdown triggered by defects or oxidation. Here, we report that spin-orbit interacted synthetic PtTe2 layers exhibit significant electrical reliability and robustness in ambient air. The 4-nm-thick PtTe2 synthesized at a low temperature (∼400°C) shows intrinsic metallic transport behavior and a weak antilocalization effect attributed to the strong spin-orbit scattering. Remarkably, PtTe2 sustains a high current density approaching ≈31.5 MA cm−2, which is the highest value among electrical interconnect candidates under oxygen exposure. Electrical failure is caused by the Joule heating of PtTe2 rather than defect-induced electromigration, which was achievable by the native TeOx passivation. The high-quality growth of PtTe2 and the investigation of its transport behaviors lay out essential foundations for the development of emerging vdW spin-orbitronics. The synthesized PtTe2 had a self-passivated surface under exposure to air Magnetoconductance study proved the realization of a 2D confined quantum system PtTe2 sustained a remarkably high current density (∼31.5 MA cm−2) under air atmosphere The native TeOx passivation retarded the defect-induced electromigration of PtTe2
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Affiliation(s)
- Seunguk Song
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Inseon Oh
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Sora Jang
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Aram Yoon
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.,Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Juwon Han
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.,Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Jung-Woo Yoo
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Soon-Yong Kwon
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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13
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Zhang Y, Lv Q, Wang H, Zhao S, Xiong Q, Lv R, Zhang X. Simultaneous electrical and thermal rectification in a monolayer lateral heterojunction. Science 2022; 378:169-175. [PMID: 36227999 DOI: 10.1126/science.abq0883] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Efficient waste heat dissipation has become increasingly challenging as transistor size has decreased to nanometers. As governed by universal Umklapp phonon scattering, the thermal conductivity of semiconductors decreases at higher temperatures and causes heat transfer deterioration under high-power conditions. In this study, we realized simultaneous electrical and thermal rectification (TR) in a monolayer MoSe2-WSe2 lateral heterostructure. The atomically thin MoSe2-WSe2 heterojunction forms an electrical diode with a high ON/OFF ratio up to 104. Meanwhile, a preferred heat dissipation channel was formed from MoSe2 to WSe2 in the ON state of the heterojunction diode at high bias voltage with a TR factor as high as 96%. Higher thermal conductivity was achieved at higher temperatures owing to the TR effect caused by the local temperature gradient. Furthermore, the TR factor could be regulated from maximum to zero by rotating the angle of the monolayer heterojunction interface. This result opens a path for designing novel nanoelectronic devices with enhanced thermal dissipation.
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Affiliation(s)
- Yufeng Zhang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Qian Lv
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Haidong Wang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Shuaiyi Zhao
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.,Frontier Science Center for Quantum Information, Beijing 100084, China.,Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.,Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Ruitao Lv
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.,Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xing Zhang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
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14
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Zhang Y, Tong Z, Pecchia A, Yam C, Dumitrică T, Frauenheim T. Four-phonon and electron-phonon scattering effects on thermal properties in two-dimensional 2H-TaS 2. NANOSCALE 2022; 14:13053-13058. [PMID: 36040796 DOI: 10.1039/d2nr02766f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Thermal transport characteristics of monolayer trigonal prismatic tantalum disulfide (2H-TaS2) are investigated using first-principles calculations combined with the Boltzmann transport equation. Due to a large acoustic-optical phonon gap of 1.85 THz, the four-phonon (4ph) scattering significantly reduces the room-temperature phononic thermal conductivity (κph). With the further inclusion of phonon-electron scattering, κph reduces to 1.78 W mK-1. Nevertheless, the total thermal conductivity (κtotal) of 7.82 W mK-1 is dominated by the electronic thermal conductivity (κe) of 6.04 W mK-1. Due to the electron-phonon coupling, κe differs from the typical estimation based on the Wiedemann-Franz law with a constant Sommerfeld value. This work provides new insights into the physical mechanisms for thermal transport in metallic 2D systems with strong anharmonic and electron-phonon coupling effects. The phonon scattering beyond three-phonon (3ph) scattering and even κe are typically overlooked in computations, and the constant Sommerfeld value is widely used for separating κe and κph from the experimental thermal conductivity. These conclusions have implications for both the computational and experimental measurements of the thermal properties of transition metal dichalcogenides.
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Affiliation(s)
- Yatian Zhang
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany.
| | - Zhen Tong
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China.
- Beijing Computational Science Research Center, Beijing 100193, China
| | | | - ChiYung Yam
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China.
| | - Traian Dumitrică
- Department of Mechanical Engineering, University of Minnesota, Minnesota 55455, USA.
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany.
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China.
- Beijing Computational Science Research Center, Beijing 100193, China
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15
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Mandal S, Maity I, Das A, Jain M, Maiti PK. Tunable lattice thermal conductivity of twisted bilayer MoS 2. Phys Chem Chem Phys 2022; 24:13860-13868. [PMID: 35621002 DOI: 10.1039/d2cp01304e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have studied the thermal conductivity (κ) of layered MoS2, a typical member of the transition metal dichalcogenide (TMDC) materials, using fully atomistic molecular dynamics simulations and Boltzmann transport equation (BTE) based first principles methods. We investigate the tuning of the thermal conductivity with the twist angle between two layers and found a decreasing trend of κ with the increase in the lattice constant of the moiré superlattice. The thermal conductivity at twist angle θ = 21.78° is found to be 72.03 W m-1 K-1 and for an angle of 2.87°, it reaches 54.48 W m-1 K-1, leading to a 32% reduction in the thermal conductivity. We use first principles calculations based on the BTE for phonons to give a microscopic origin of the decrease in thermal conductivity through anharmonic phonon scattering events and also reaffirm the MD simulation results for the monolayer and bilayer.
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Affiliation(s)
- Soham Mandal
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
| | - Indrajit Maity
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India. .,Departments of Materials and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, South Kensington Campus, London SW7 2BX, UK
| | - Anindya Das
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
| | - Manish Jain
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
| | - Prabal K Maiti
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
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16
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Zhou J, Xu S, Liu J. Review of Photothermal Technique for Thermal Measurement of Micro-/Nanomaterials. NANOMATERIALS 2022; 12:nano12111884. [PMID: 35683739 PMCID: PMC9182306 DOI: 10.3390/nano12111884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Revised: 05/26/2022] [Accepted: 05/30/2022] [Indexed: 11/20/2022]
Abstract
The extremely small size of micro-/nanomaterials limits the application of conventional thermal measurement methods using a contact heating source or probing sensor. Therefore, non-contact thermal measurement methods are preferable in micro-/nanoscale thermal characterization. In this review, one of the non-contact thermal measurement methods, photothermal (PT) technique based on thermal radiation, is introduced. When subjected to laser heating with controllable modulation frequencies, surface thermal radiation carries fruitful information for thermal property determination. As thermal properties are closely related to the internal structure of materials, for micro-/nanomaterials, PT technique can measure not only thermal properties but also features in the micro-/nanostructure. Practical applications of PT technique in the thermal measurement of micro-/nanomaterials are then reviewed, including special wall-structure investigation in multiwall carbon nanotubes, porosity determination in nanomaterial assemblies, and the observation of amorphous/crystalline structure transformation in proteins in heat treatment. Furthermore, the limitations and future application extensions are discussed.
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Affiliation(s)
- Jianjun Zhou
- School of Mechanical and Automotive Engineering, Shanghai University of Engineering Science, Shanghai 201620, China;
| | - Shen Xu
- School of Mechanical and Automotive Engineering, Shanghai University of Engineering Science, Shanghai 201620, China;
- Correspondence:
| | - Jing Liu
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518116, China;
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17
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Thermal and mechanical characterization of nanoporous two-dimensional MoS 2 membranes. Sci Rep 2022; 12:7777. [PMID: 35546613 PMCID: PMC9095662 DOI: 10.1038/s41598-022-11883-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Accepted: 04/29/2022] [Indexed: 11/30/2022] Open
Abstract
For practical application, determining the thermal and mechanical characterization of nanoporous two-dimensional MoS2 membranes is critical. To understand the influences of the temperature and porosity on the mechanical properties of single-layer MoS2 membrane, uniaxial and biaxial tensions were conducted using molecular dynamics simulations. It was found that Young’s modulus, ultimate strength, and fracture strain reduce with the temperature increases. At the same time, porosity effects were found to cause a decrease in the ultimate strength, fracture strain, and Young’s modulus of MoS2 membranes. Because the pore exists, the most considerable stresses will be concentrated around the pore site throughout uniaxial and biaxial tensile tests, increasing the possibility of fracture compared to tensing the pristine membrane. Moreover, this article investigates the impacts of temperature, porosity, and length size on the thermal conductivity of MoS2 membrane using the non-equilibrium molecular dynamics (NEMD) method. The results show that the thermal conductivity of the MoS2 membrane is strongly dependent on the temperature, porosity, and length size. Specifically, the thermal conductivity decreases as the temperature increases, and the thermal conductivity reduces as the porosity density increases. Interestingly, the thermal and mechanical properties of the pristine MoS2 membrane are similar in armchair and zigzag directions.
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18
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Ultrafast laser ablation, intrinsic threshold, and nanopatterning of monolayer molybdenum disulfide. Sci Rep 2022; 12:6910. [PMID: 35484187 PMCID: PMC9050692 DOI: 10.1038/s41598-022-10820-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Accepted: 04/12/2022] [Indexed: 11/08/2022] Open
Abstract
Laser direct writing is an attractive method for patterning 2D materials without contamination. Literature shows that the ultrafast ablation threshold of graphene across substrates varies by an order of magnitude. Some attribute it to the thermal coupling to the substrates, but it remains by and large an open question. For the first time the effect of substrates on the femtosecond ablation of 2D materials is studied using MoS2 as an example. We show unambiguously that femtosecond ablation of MoS2 is an adiabatic process with negligible heat transfer to the substrates. The observed threshold variation is due to the etalon effect which was not identified before for the laser ablation of 2D materials. Subsequently, an intrinsic ablation threshold is proposed as a true threshold parameter for 2D materials. Additionally, we demonstrate for the first time femtosecond laser patterning of monolayer MoS2 with sub-micron resolution and mm/s speed. Moreover, engineered substrates are shown to enhance the ablation efficiency, enabling patterning with low-power ultrafast oscillators. Finally, a zero-thickness approximation is introduced to predict the field enhancement with simple analytical expressions. Our work clarifies the role of substrates on ablation and firmly establishes ultrafast laser ablation as a viable route to pattern 2D materials.
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19
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Saleta Reig D, Varghese S, Farris R, Block A, Mehew JD, Hellman O, Woźniak P, Sledzinska M, El Sachat A, Chávez-Ángel E, Valenzuela SO, van Hulst NF, Ordejón P, Zanolli Z, Sotomayor Torres CM, Verstraete MJ, Tielrooij KJ. Unraveling Heat Transport and Dissipation in Suspended MoSe 2 from Bulk to Monolayer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108352. [PMID: 34981868 DOI: 10.1002/adma.202108352] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2021] [Revised: 12/02/2021] [Indexed: 06/14/2023]
Abstract
Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by material thickness and the material's environment. This combined experimental-theoretical study establishes a unifying physical picture of the intrinsic lattice thermal conductivity of the representative TMD MoSe2 . Thermal conductivity measurements using Raman thermometry on a large set of clean, crystalline, suspended crystals with systematically varied thickness are combined with ab initio simulations with phonons at finite temperature. The results show that phonon dispersions and lifetimes change strongly with thickness, yet the thinnest TMD films exhibit an in-plane thermal conductivity that is only marginally smaller than that of bulk crystals. This is the result of compensating phonon contributions, in particular heat-carrying modes around ≈0.1 THz in (sub)nanometer thin films, with a surprisingly long mean free path of several micrometers. This behavior arises directly from the layered nature of the material. Furthermore, out-of-plane heat dissipation to air molecules is remarkably efficient, in particular for the thinnest crystals, increasing the apparent thermal conductivity of monolayer MoSe2 by an order of magnitude. These results are crucial for the design of (flexible) TMD-based (opto-)electronic applications.
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Affiliation(s)
- David Saleta Reig
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Sebin Varghese
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Roberta Farris
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Alexander Block
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Jake D Mehew
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Olle Hellman
- Dept of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth, 76100, Israel
| | - Paweł Woźniak
- ICFO-Institut de Ciéncies Fotóniques, Mediterranean Technology Park, Castelldefels, Barcelona, 08860, Spain
| | - Marianna Sledzinska
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Alexandros El Sachat
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Emigdio Chávez-Ángel
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona, 08010, Spain
| | - Niek F van Hulst
- ICFO-Institut de Ciéncies Fotóniques, Mediterranean Technology Park, Castelldefels, Barcelona, 08860, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona, 08010, Spain
| | - Pablo Ordejón
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
| | - Zeila Zanolli
- Chemistry Department and ETSF, Debye Institute for Nanomaterials Science, Utrecht University, the Netherlands
| | - Clivia M Sotomayor Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona, 08010, Spain
| | - Matthieu J Verstraete
- Nanomat, Q-Mat, CESAM, and European Theoretical Spectroscopy Facility, Université de Liége, Liége, B-4000, Belgium
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra (Barcelona), 08193, Spain
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20
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Spiece J, Sangtarash S, Mucientes M, Molina-Mendoza AJ, Lulla K, Mueller T, Kolosov O, Sadeghi H, Evangeli C. Low thermal conductivity in franckeite heterostructures. NANOSCALE 2022; 14:2593-2598. [PMID: 35133363 DOI: 10.1039/d1nr07889e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Layered crystals are known to be good candidates for bulk thermoelectric applications as they open new ways to realise highly efficient devices. Two dimensional materials, isolated from layered materials, and their stacking into heterostructures have attracted intense research attention for nanoscale applications due to their high Seebeck coefficient and possibilities to engineer their thermoelectric properties. However, integration to thermoelectric devices is problematic due to their usually high thermal conductivities. Reporting on thermal transport studies between 150 and 300 K, we show that franckeite, a naturally occurring 2D heterostructure, exhibits a very low thermal conductivity which combined with its previously reported high Seebeck coefficient and electrical conductance make it a promising candidate for low dimensional thermoelectric applications. We find cross- and in-plane thermal conductivity values at room temperature of 0.70 and 0.88 W m-1 K-1, respectively, which is one of the lowest values reported today for 2D-materials. Interestingly, a 1.77 nm thick layer of franckeite shows very low thermal conductivity similar to one of the most widely used thermoelectric material Bi2Te3 with the thickness of 10-20 nm. We show that this is due to the low Debye frequency of franckeite and scattering of phonon transport through van der Waals interface between different layers. This observation open new routes for high efficient ultra-thin thermoelectric applications.
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Affiliation(s)
- Jean Spiece
- Physics Department, Lancaster University, Lancaster LA1 4YW, UK.
| | - Sara Sangtarash
- Device Modelling Group, School of Engineering, University of Warwick, CV4 7AL Coventry, UK.
| | - Marta Mucientes
- Physics Department, Lancaster University, Lancaster LA1 4YW, UK.
| | | | - Kunal Lulla
- Physics Department, Lancaster University, Lancaster LA1 4YW, UK.
| | - Thomas Mueller
- Vienna University of Technology, Gusshausstrasse 27-29, Vienna A-1040, Austria
| | - Oleg Kolosov
- Physics Department, Lancaster University, Lancaster LA1 4YW, UK.
| | - Hatef Sadeghi
- Device Modelling Group, School of Engineering, University of Warwick, CV4 7AL Coventry, UK.
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Xu K, Liang T, Zhang Z, Cao X, Han M, Wei N, Wu J. Grain boundary and misorientation angle-dependent thermal transport in single-layer MoS 2. NANOSCALE 2022; 14:1241-1249. [PMID: 34994370 DOI: 10.1039/d1nr05113j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Grain boundaries (GBs) are inevitable defects in large-area MoS2 samples but they play a key role in their properties, however, the influence of grain misorientation on thermal transport has largely remained unknown. Here, the critical role of misorientation angle in thermal transport characteristics across 5|7 polar dislocation-dominated GBs in monolayer MoS2 is explored using nonequilibrium molecular dynamics simulations. Results show that thermal transport characteristics of defective GBs are greatly dictated by the misorientation angle, with "U"-shaped thermal conductance as misorientation angle varying from around 5.06-52.26°, as well as by GB energy, 5|7 dislocation type and the grain size. Such unique thermal transport across GBs is primarily attributed to rising phonon-boundary softening and scattering with increasing dislocation density at GBs or GB energy, as well as an increase in localized phonon modes. The study establishes the fundamental relationship between GB and the thermal properties of single-layer MoS2 and highlights the vital role of GBs in designing efficient thermoelectric and thermal management transition metal dichalcogenides.
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Affiliation(s)
- Ke Xu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
| | - Ting Liang
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Zhisen Zhang
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
| | - Xuezheng Cao
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
| | - Meng Han
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ning Wei
- Jiangsu Key Laboratory of Advanced Food Manufacturing Equipment and Technology, Jiangnan University, 214122, Wuxi, China.
| | - Jianyang Wu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
- NTNU Nanomechanical Lab, Norwegian University of Science and Technology (NTNU), Trondheim 7491, Norway
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22
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Marmolejo-Tejada JM, Mosquera MA. Thermal properties of single-layer MoS2-WS2 alloys enabled by machine-learned interatomic potentials. Chem Commun (Camb) 2022; 58:6902-6905. [DOI: 10.1039/d2cc02519a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) quantum materials are poised to transform conventional electronics for a wide spectrum of applications that will encompass chemical sciences. For the study of thermal transport in single-layer (1L)...
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23
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Yuan R, Chen L, Wu C. Heat Conduction Behavior of Two-Dimensional Nanomaterials and Their Interface Regulation ※. ACTA CHIMICA SINICA 2022. [DOI: 10.6023/a21120616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
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24
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Sun J, Dai K, Xia W, Chen J, Jiang K, Li Y, Zhang J, Zhu L, Shang L, Hu Z, Chu J. Thermal Conductivity of Large-Area Polycrystalline MoSe 2 Films Grown by Chemical Vapor Deposition. ACS OMEGA 2021; 6:30526-30533. [PMID: 34805681 PMCID: PMC8600615 DOI: 10.1021/acsomega.1c03921] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Accepted: 10/22/2021] [Indexed: 05/29/2023]
Abstract
It is of great importance to understand the thermal properties of MoSe2 films for electronic and optoelectronic applications. In this work, large-area polycrystalline MoSe2 films are prepared using a low-cost, controllable, large-scale, and repeatable chemical vapor deposition method, which facilitates direct device fabrication. Raman spectra and X-ray diffraction patterns indicate a hexagonal (2H) crystal structure of the MoSe2 film. Ellipsometric spectra analysis indicates that the optical band gap of the MoSe2 film is estimated to be ∼1.23 eV. From the analysis of the temperature-dependent and laser-power-dependent Raman spectra, the thermal conductivity of the suspended MoSe2 films is found to be ∼28.48 W/(m·K) at room temperature. The results can provide useful guidance for an effective thermal management of large-area polycrystalline MoSe2-based electronic and optoelectronic devices.
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Affiliation(s)
- Jie Sun
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Dai
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Wei Xia
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Junhui Chen
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yawei Li
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liangqing Zhu
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhigao Hu
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative
Innovation Center of Extreme Optics, Shanxi
University, Taiyuan 030006, Shanxi, China
- Shanghai
Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical
Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai),
Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative
Innovation Center of Extreme Optics, Shanxi
University, Taiyuan 030006, Shanxi, China
- Shanghai
Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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25
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Dheeraj KVS, Sathian SP. The disparate effect of strain on thermal conductivity of 2-D materials. Phys Chem Chem Phys 2021; 23:23096-23105. [PMID: 34617094 DOI: 10.1039/d1cp02771a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Thermal transport in 2-D (dimensional) structures is highly susceptible to external perturbations such as strain, owing to their high surface-to-volume ratio. In this study, we investigate the influence of strain on the thermal conductivity of flat (graphene and hexagonal boron nitride), buckled and puckered (molybdenum disulfide and black phosphorous) 2-D materials. Unlike bulk materials where the thermal conductivity reduces with strain, the thermal conductivity of 2-D materials under strain is observed to be unique and dependent on the material considered. To understand such diverse strain-dependent thermal conductivity in 2-D materials, the phonon mode properties are calculated. It was observed that the strain softens the longitudinal mode (LA), whereas the out-of-plane acoustic mode (ZA) undergoes stiffening albeit various extents. In flat 2-D materials, the dispersion of ZA mode is linearized under strain while it tends to linearize in buckled and puckered structures. The variation in the phonon group velocity of ZA mode coupled with the anomalous behavior of the phonon lifetime of acoustic modes results in a diverse strain dependence of the thermal conductivity of 2-D materials. Our findings offer insight into the influence of strain of 2-D materials and will be helpful in tailoring the thermal properties of these materials for various applications such as nanoelectronics and thermoelectric devices.
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Affiliation(s)
- K V S Dheeraj
- Department of Applied Mechanics, Indian Institute of Technology, Chennai, India.
| | - Sarith P Sathian
- Department of Applied Mechanics, Indian Institute of Technology, Chennai, India.
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26
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Zhang L, Zhong Y, Qian X, Song Q, Zhou J, Li L, Guo L, Chen G, Wang EN. Toward Optimal Heat Transfer of 2D-3D Heterostructures via van der Waals Binding Effects. ACS APPLIED MATERIALS & INTERFACES 2021; 13:46055-46064. [PMID: 34529424 DOI: 10.1021/acsami.1c08131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials and their heterogeneous integration have enabled promising electronic and photonic applications. However, significant thermal challenges arise due to numerous van der Waals (vdW) interfaces limiting the dissipation of heat generated in the device. In this work, we investigate the vdW binding effect on heat transport through a MoS2-amorphous silica heterostructure. We show using atomistic simulations that the cross-plane thermal conductance starts to saturate with the increase of vdW binding energy, which is attributed to substrate-induced localized phonons. With these atomistic insights, we perform device-level heat transfer optimizations. Accordingly, we identify a regime, characterized by the coupling of in-plane and cross-plane heat transport mediated by vdW binding energy, where maximal heat dissipation in the device is achieved. These results elucidate fundamental heat transport through the vdW heterostructure and provide a pathway toward optimizing thermal management in 2D nanoscale devices.
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Affiliation(s)
- Lenan Zhang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yang Zhong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xin Qian
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Qichen Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jiawei Zhou
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Long Li
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Gang Chen
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Evelyn N Wang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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27
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Yin Y, Yi M, Guo W. High and Anomalous Thermal Conductivity in Monolayer MSi 2Z 4 Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45907-45915. [PMID: 34523910 DOI: 10.1021/acsami.1c14205] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The lattice thermal conductivity (κ) of a newly synthesized two-dimensional (2D) MoSi2N4 family and its associated abnormality are anatomized by ab initio phonon Boltzmann transport calculations. κ of MoSi2N4 and WSi2N4 is found to be over 400 W m-1 K-1 at 300 K. κ of MoSi2Z4 (Z = N, P, As) obeys Slack's rule of thumb, decreasing by 1 order of magnitude from Z = N to Z = As with 46 W m-1 K-1. However, in MSi2N4 (M = Mo, Cr, W, Ti, Zr, Hf), the variation of κ with respect to M is anomalous, that is, deviating from Slack's classic rule. For M in the same group, κ of MSi2N4 is insensitive to the average atomic mass, Debye temperature, phonon group velocity, and bond strength owing to the similar phonon structure and scattering rates. MSi2N4 with heavy group-VIB M even possesses a 3-4 times higher κ than that with light group-IVB M due to its much stronger M-N and exterior Si-N bonds and thus 1 order of magnitude lower phonon scattering rates. Nevertheless, this abnormality could be traced to an interplay of certain basic vibrational properties including the bunching strength and flatness of acoustic branches and their nearby optical branches, which lie outside of the conventional guidelines by Slack. This work predicts high κ of 2D MSi2Z4 for thermal management and provides microscopic insights into deciphering the anomalous κ of layered 2D structures.
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Affiliation(s)
- Yan Yin
- State Key Lab of Mechanics and Control of Mechanical Structures & Key Lab for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science &Institute of Nanoscience & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China
| | - Min Yi
- State Key Lab of Mechanics and Control of Mechanical Structures & Key Lab for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science &Institute of Nanoscience & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Wanlin Guo
- State Key Lab of Mechanics and Control of Mechanical Structures & Key Lab for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science &Institute of Nanoscience & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China
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28
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Abstract
In recent years, there has been an explosive increase in the research on van der Waals (vdW) crystals because of their great potential applications in many optoelectronic devices. It is necessary to determine their temperature-dependent lattice vibration characteristics because their thermal and electrical transport are closely related to the anharmonic phonon effect, which will affect the performance of the devices. We review the temperature-dependent Raman spectroscopy of vdW crystals, systematically introduce the thermal behavior of optical phonons, and summarize their shift with temperature. Upon analyzing the theoretical models and summarizing the reported experimental data, it is found that the phonon shifts of vdW crystals have a "quasi-linear" relationship with temperature, which is widely described with first-order temperature (FOT) coefficients obtained through a linear fit. Thus, subsequently, the phonon shifts of monolayer materials, different-thickness crystals, suspended and supported samples, in-plane and out-of-plane modes in the same vdW materials, as well as heterostructures and alloys are discussed through comparative analysis of FOT coefficients.
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Affiliation(s)
- Siqi Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China
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29
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Lin H, Wang R, Zobeiri H, Wang T, Xu S, Wang X. The in-plane structure domain size of nm-thick MoSe 2 uncovered by low-momentum phonon scattering. NANOSCALE 2021; 13:7723-7734. [PMID: 33928955 DOI: 10.1039/d0nr09099a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Although 2D materials have been widely studied for more than a decade, very few studies have been reported on the in-plane structure domain (STD) size even though such a physical property is critical in determining the charge carrier and energy carrier transport. Grazing incidence X-ray diffraction (XRD) can be used for studying the in-plane structure of very thin samples, but it becomes more challenging to study few-layer 2D materials. In this work the nanosecond energy transport state-resolved Raman (nET-Raman) technique is applied to resolve this key problem by directly measuring the thermal reffusivity of 2D materials and determining the residual value at the 0 K-limit. Such a residual value is determined by low-momentum phonon scattering and can be directly used to characterize the in-plane STD size of 2D materials. Three suspended MoSe2 (15, 50 and 62 nm thick) samples are measured using nET-Raman from room temperature down to 77 K. Based on low-momentum phonon scattering, the STD size is determined to be 58.7 nm and 84.5 nm for 50 nm and 62 nm thick samples, respectively. For comparison, the in-plane structure of bulk MoSe2 that is used to prepare the measured nm-thick samples is characterized using XRD. It uncovers crystallite sizes of 64.8 nm in the (100) direction and 121 nm in the (010) direction. The STD size determined by our low momentum phonon scattering is close to the crystallite size determined by XRD, but still shows differences. The STD size by low-momentum phonon scattering is more affected by the crystallite sizes in all in-plane directions rather than that by XRD that is for a specific crystallographic orientation. Their close values demonstrate that during nanosheet preparation (peeling and transfer), the in-plane structure experiences very little damage.
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Affiliation(s)
- Huan Lin
- School of Environmental and Municipal Engineering, Qingdao University of Technology, Qingdao, Shandong, 266033, P. R. China
- Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA.
| | - Ridong Wang
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
- Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA.
| | - Hamidreza Zobeiri
- Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA.
| | - Tianyu Wang
- Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shen Xu
- School of Mechanical and Automotive Engineering, Shanghai University of Engineering Science, Shanghai, 201620, P. R. China
- Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA.
| | - Xinwei Wang
- Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA.
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30
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Han D, Yang X, Du M, Xin G, Zhang J, Wang X, Cheng L. Improved thermoelectric properties of WS 2-WSe 2 phononic crystals: insights from first-principles calculations. NANOSCALE 2021; 13:7176-7192. [PMID: 33889870 DOI: 10.1039/d0nr09169c] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, two-dimensional transition metal dichalcogenide (TMDC) monolayers have attracted much attention owing to their excellent physical properties. In the present study, we systematically investigate the thermoelectric properties of different WS2-WSe2 phononic crystals by utilizing first-principles calculations. First, the thermal properties of all phononic crystals with superlattices (SL1 and SL2) and their individual components (WS2 and WSe2) are evaluated, in which the lattice thermal conductivities (kph) of WS2 and WSe2 monolayers present isotropic behaviors, while the values of SL1 and SL2 monolayers reveal weak anisotropic behaviors. It can be observed that the kph values of WS2 and WSe2 monolayers are larger than those of SL1 and SL2 monolayers, which can be attributed to the decreasing phonon group velocity and phonon lifetime. Moreover, we calculate the electronic band structures of all monolayers, indicating that all monolayers are semiconductors. Afterwards, the electrical conductivities, the Seebeck coefficients, the power factors, the electronic thermal conductivities, and the ZT values at different temperatures are evaluated. The ZTmax values of WS2, WSe2, SL1, and SL2 monolayers with p-type doping are 0.43, 0.37, 0.95, and 0.66 at 1000 K. It can be proved that the SL1 monolayer possesses the largest ZT, which is at least two times higher than those of the WS2 and WSe2 monolayer. Finally, we build two kinds of phononic crystals with periodic holes (PCH1 and PCH2) and evaluate the thermoelectric properties. It can be observed that the PCH2 structure shows the best thermoelectric performance. The ZTmax values of the PCH2 structure can reach 2.53 and 4.54 with p-type doping along the x and y directions, which are 2.66 and 6.75 times higher than those of the SL1 monolayer. This work provides a new strategy to obtain higher thermoelectric performance and demonstrates the potential applications of phononic crystals in TMDC-based nanoelectronic devices.
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Affiliation(s)
- Dan Han
- Institute of Thermal Science and Technology, Shandong University, Jinan 250061, Shandong Province, China.
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31
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Xiong F, Yalon E, McClellan CJ, Zhang J, Aslan B, Sood A, Sun J, Andolina CM, Saidi WA, Goodson KE, Heinz TF, Cui Y, Pop E. Tuning electrical and interfacial thermal properties of bilayer MoS 2via electrochemical intercalation. NANOTECHNOLOGY 2021; 32:265202. [PMID: 33601363 DOI: 10.1088/1361-6528/abe78a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2020] [Accepted: 02/18/2021] [Indexed: 06/12/2023]
Abstract
Layered two-dimensional (2D) materials such as MoS2have attracted much attention for nano- and opto-electronics. Recently, intercalation (e.g. of ions, atoms, or molecules) has emerged as an effective technique to modulate material properties of such layered 2D films reversibly. We probe both the electrical and thermal properties of Li-intercalated bilayer MoS2nanosheets by combining electrical measurements and Raman spectroscopy. We demonstrate reversible modulation of carrier density over more than two orders of magnitude (from 0.8 × 1012to 1.5 × 1014cm-2), and we simultaneously obtain the thermal boundary conductance between the bilayer and its supporting SiO2substrate for an intercalated system for the first time. This thermal coupling can be reversibly modulated by nearly a factor of eight, from 14 ± 4.0 MW m-2K-1before intercalation to 1.8 ± 0.9 MW m-2K-1when the MoS2is fully lithiated. These results reveal electrochemical intercalation as a reversible tool to modulate and control both electrical and thermal properties of 2D layers.
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Affiliation(s)
- Feng Xiong
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Eilam Yalon
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Connor J McClellan
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Jinsong Zhang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Burak Aslan
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
- Department of Applied Physics, Stanford University, Stanford, CA 94305, United States of America
| | - Aditya Sood
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Jie Sun
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Christopher M Andolina
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Wissam A Saidi
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, CA 94305, United States of America
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, United States of America
| | - Yi Cui
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, United States of America
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
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32
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Easy E, Gao Y, Wang Y, Yan D, Goushehgir SM, Yang EH, Xu B, Zhang X. Experimental and Computational Investigation of Layer-Dependent Thermal Conductivities and Interfacial Thermal Conductance of One- to Three-Layer WSe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:13063-13071. [PMID: 33720683 DOI: 10.1021/acsami.0c21045] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDCs) have received extensive research interest and investigations in the past decade. In this research, we used a refined opto-thermal Raman technique to explore the thermal transport properties of one popular TMDC material WSe2, in the single-layer (1L), bilayer (2L), and trilayer (3L) forms. This measurement technique is direct without additional processing to the material, and the absorption coefficient of WSe2 is discovered during the measurement process to further increase this technique's precision. By comparing the sample's Raman spectroscopy spectra through two different laser spot sizes, we are able to obtain two parameters-lateral thermal conductivities of 1L-3L WSe2 and the interfacial thermal conductance between 1L-3L WSe2 and the substrate. We also implemented full-atom nonequilibrium molecular dynamics simulations (NEMD) to computationally investigate the thermal conductivities of 1L-3L WSe2 to provide comprehensive evidence and confirm the experimental results. The trend of the layer-dependent lateral thermal conductivities and interfacial thermal conductance of 1L-3L WSe2 is discovered. The room-temperature thermal conductivities for 1L-3L WSe2 are 37 ± 12, 24 ± 12, and 20 ± 6 W/(m·K), respectively. The suspended 1L WSe2 possesses a thermal conductivity of 49 ± 14 W/(m·K). Crucially, the interfacial thermal conductance values between 1L-3L WSe2 and the substrate are found to be 2.95 ± 0.46, 3.45 ± 0.50, and 3.46 ± 0.45 MW/(m2·K), respectively, with a flattened trend starting the 2L, a finding that provides the key information for thermal management and thermoelectric designs.
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Affiliation(s)
| | - Yuan Gao
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | | | | | - Seyed M Goushehgir
- Department of Mechanical Engineering, Urmia University of Technology, Urmia, West Azerbaijan, Iran
| | | | - Baoxing Xu
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
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33
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El Sachat A, Alzina F, Sotomayor Torres CM, Chavez-Angel E. Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:175. [PMID: 33450930 PMCID: PMC7828386 DOI: 10.3390/nano11010175] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 01/04/2021] [Accepted: 01/08/2021] [Indexed: 02/07/2023]
Abstract
Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. We summarize the latest device-relevant methodologies of phonon engineering in semiconductor nanostructures and 2D materials, including graphene and transition metal dichalcogenides. Then, we review recent advances in thermal characterization techniques, and discuss their main challenges and limitations.
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Affiliation(s)
- Alexandros El Sachat
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
| | - Francesc Alzina
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
| | - Clivia M. Sotomayor Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
- ICREA, Passeig Lluis Companys 23, 08010 Barcelona, Spain
| | - Emigdio Chavez-Angel
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
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34
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Abstract
The densification of integrated circuits requires thermal management strategies and high thermal conductivity materials1-3. Recent innovations include the development of materials with thermal conduction anisotropy, which can remove hotspots along the fast-axis direction and provide thermal insulation along the slow axis4,5. However, most artificially engineered thermal conductors have anisotropy ratios much smaller than those seen in naturally anisotropic materials. Here we report extremely anisotropic thermal conductors based on large-area van der Waals thin films with random interlayer rotations, which produce a room-temperature thermal anisotropy ratio close to 900 in MoS2, one of the highest ever reported. This is enabled by the interlayer rotations that impede the through-plane thermal transport, while the long-range intralayer crystallinity maintains high in-plane thermal conductivity. We measure ultralow thermal conductivities in the through-plane direction for MoS2 (57 ± 3 mW m-1 K-1) and WS2 (41 ± 3 mW m-1 K-1) films, and we quantitatively explain these values using molecular dynamics simulations that reveal one-dimensional glass-like thermal transport. Conversely, the in-plane thermal conductivity in these MoS2 films is close to the single-crystal value. Covering nanofabricated gold electrodes with our anisotropic films prevents overheating of the electrodes and blocks heat from reaching the device surface. Our work establishes interlayer rotation in crystalline layered materials as a new degree of freedom for engineering-directed heat transport in solid-state systems.
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35
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Ahammed S, Islam MS, Mia I, Park J. Lateral and flexural thermal transport in stanene/2D-SiC van der Waals heterostructure. NANOTECHNOLOGY 2020; 31:505702. [PMID: 33006320 DOI: 10.1088/1361-6528/abb491] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Thermal management is one of the key challenges in nanoelectronic and optoelectronic devices. The development of a van der Waals heterostructure (vdWH) using the vertical positioning of different two-dimensional (2D) materials has recently appeared as a promising way of attaining desirable electrical, optical, and thermal properties. Here, we explore the lateral and flexural thermal conductivity of stanene/2D-SiC vdWH utilizing the reverse non-equilibrium molecular dynamics simulation and transient pump-probe technique. The effects of length, area, coupling strength and temperature on the thermal transport are studied systematically. The projected lateral thermal conductivity of a stanene/2D-SiC hetero-bilayer is found to be 66.67 [Formula: see text], which is greater than stanene, silicene, germanene, MoSe2 and even higher than some hetero-bilayers, including MoS2/MoSe2 and stanene/silicene. The lateral thermal conductivity increases as the length increases, while it tends to decrease with increasing temperature. The computed flexural interfacial thermal resistance between stanene and 2D-SiC is 3.0622 [Formula: see text] [Formula: see text] K.m2 W-1, which is close to other 2D hetero-bilayers. The interfacial resistance between stanene and 2D-SiC is reduced by 70.49% and 50.118% as the temperature increases from 100 K to 600 K and the coupling factor increases from [Formula: see text] to [Formula: see text], respectively. In addition, various phonon modes are evaluated to disclose the fundamental mechanisms of thermal transport in the lateral and flexural direction of the hetero-bilayer. These results are important in order to understand the heat transport phenomena of stanene/2D-SiC vdWH, which could be useful for enhancing their promising applications.
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Affiliation(s)
- Shihab Ahammed
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Imon Mia
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, United States of America
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada
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36
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Araujo FDV, Oliveira VV, Gadelha AC, Carvalho TCV, Fernandes TFD, Silva FWN, Longuinhos R, Ribeiro-Soares J, Jorio A, Souza Filho AG, Alencar RS, Viana BC. Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide. NANOTECHNOLOGY 2020; 31:495702. [PMID: 32990274 DOI: 10.1088/1361-6528/abb107] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Phonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A[Formula: see text] and A[Formula: see text] Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different [Formula: see text] temperature coefficients. The first-order temperature coefficients θ of A[Formula: see text] mode is ∼ -0.016 cm-1/K, independent of the number of layers and the support. In contrast, the θ of A[Formula: see text] mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm-1 K-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm-1 K-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm-1 K-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.
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Affiliation(s)
- Francisco D V Araujo
- Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
- Instituto Federal de Educação, Ciência e Tecnologia do Piauí-IFPI, 64760-000, Piauí, Brazil
| | - Victor V Oliveira
- Faculdade de Física, Universidade Federal do Pará, Belém, Pará, 66075-110 Brazil
| | - Andreij C Gadelha
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Thais C V Carvalho
- Departamento de Física, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
| | - Thales F D Fernandes
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Francisco W N Silva
- Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Alcântara, Alcântara, Maranhão, Brazil
| | - R Longuinhos
- Departamento de Física, Universidade Federal de Lavras, Lavras, Minas Gerais, 37200-000, Brazil
| | - Jenaina Ribeiro-Soares
- Departamento de Física, Universidade Federal de Lavras, Lavras, Minas Gerais, 37200-000, Brazil
| | - Ado Jorio
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Antonio G Souza Filho
- Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, Ceará, 60455-900, Brazil
| | - Rafael S Alencar
- Faculdade de Física, Universidade Federal do Pará, Belém, Pará, 66075-110 Brazil
| | - Bartolomeu C Viana
- Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
- Departamento de Física, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
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37
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Hunter N, Azam N, Zobeiri H, Wang R, Mahjouri-Samani M, Wang X. Interfacial Thermal Conductance between Monolayer WSe 2 and SiO 2 under Consideration of Radiative Electron-Hole Recombination. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51069-51081. [PMID: 33108155 DOI: 10.1021/acsami.0c14990] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This work reports the interfacial thermal conductance (G) and radiative recombination efficiency (β), also known as photoluminescence quantum yield (PL QY), of monolayer WSe2 flakes supported by fused silica substrates via energy-transport state-resolved Raman (ET-Raman). This is the first known work to consider the effect of radiative electron-hole recombination on the thermal transport characteristics of single-layer transition-metal dichalcogenides (TMDs). ET-Raman uses a continuous-wave laser for steady-state heating as well as nanosecond and picosecond lasers for transient energy transport to simultaneously heat the monolayer flakes and extract the Raman signal. The three lasers induce distinct heating phenomena that distinguish the interfacial thermal conductance and radiative recombination efficiency, which can then be determined in tandem with three-dimensional (3D) numerical modeling of the temperature rise from respective laser irradiation. For the five samples measured, G is found to range from 2.10 ± 0.14 to 15.9 ± 5.0 MW m-2 K-1 and β ranges from 36 ± 6 to 65 ± 7%. These values support the claim that interfacial phenomena such as surface roughness and two-dimensional (2D) material-substrate bonding strength play critical roles in interfacial thermal transport and electron-hole recombination mechanisms in TMD monolayers. It is also determined that low-level defect density enhances the radiative recombination efficiency of single-layer WSe2.
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Affiliation(s)
- Nicholas Hunter
- Department of Mechanical Engineering, Iowa State University, 2025 Black Engineering Building, Ames, Iowa 50011, United States
| | - Nurul Azam
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Hamidreza Zobeiri
- Department of Mechanical Engineering, Iowa State University, 2025 Black Engineering Building, Ames, Iowa 50011, United States
| | - Ridong Wang
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, P. R. China
| | - Masoud Mahjouri-Samani
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Xinwei Wang
- Department of Mechanical Engineering, Iowa State University, 2025 Black Engineering Building, Ames, Iowa 50011, United States
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38
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Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures. ENERGIES 2020. [DOI: 10.3390/en13215851] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Abstract
The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.
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39
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Somvanshi D, Ber E, Bailey CS, Pop E, Yalon E. Improved Current Density and Contact Resistance in Bilayer MoSe 2 Field Effect Transistors by AlO x Capping. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36355-36361. [PMID: 32678569 PMCID: PMC7588022 DOI: 10.1021/acsami.0c09541] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS2, grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe2 in particular, are scarce. Here, we compare the electrical properties of 1L and bilayer (2L) MoSe2 grown by CVD and capped by sub-stoichiometric AlOx. The 2L channels exhibit ∼20× lower contact resistance (RC) and ∼30× larger current density compared with 1L channels. RC is further reduced by >5× with AlOx capping, which enables improved transistor current density. Overall, 2L AlOx-capped MoSe2 transistors (with ∼500 nm channel length) achieve improved current density (∼65 μA/μm at VDS = 4 V), a good Ion/Ioff ratio of >106, and an RC of ∼60 kΩ·μm. The weaker performance of 1L devices is due to their sensitivity to processing and ambient. Our results suggest that 2L (or few layers) is preferable to 1L for improved electronic properties in applications that do not require a direct band gap, which is a key finding for future two-dimensional electronics.
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Affiliation(s)
- Divya Somvanshi
- Viterbi
Department of Electrical Engineering, Technion-Israel
Institute of Technology, Haifa 32000, Israel
| | - Emanuel Ber
- Viterbi
Department of Electrical Engineering, Technion-Israel
Institute of Technology, Haifa 32000, Israel
| | - Connor S. Bailey
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department
of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Precourt
Institute for Energy, Stanford University, Stanford, California 94305, United States
| | - Eilam Yalon
- Viterbi
Department of Electrical Engineering, Technion-Israel
Institute of Technology, Haifa 32000, Israel
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40
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Adessi C, Pecorario S, Thébaud S, Bouzerar G. First principle investigation of the influence of sulfur vacancies on thermoelectric properties of single layered MoS 2. Phys Chem Chem Phys 2020; 22:15048-15057. [PMID: 32597428 DOI: 10.1039/d0cp01193b] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Thermoelectric properties of single layered transition metal dichalchogenide MoS2 are investigated on the basis of ab initio calculations combined with Landauer formalism. The focus is made on sulfur vacancy defects that are experimentally observed to be largely present in materials especially in exfoliated two dimensional MoS2 compounds. The impact of these defects on phonon and electron transport properties is investigated here using a realistic description of their natural disordering. It is observed that phonons tend to localize around defects which induce a drastic reduction in thermal conductivity. For p type doping the figure of merit is almost insensitive to the defects while for n type doping the figure of merit rapidly tends to be zero for the increasing length of the system. These features are linked with a larger scattering of the electrons in the conduction band than that of holes in the valence band.
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Affiliation(s)
- Ch Adessi
- Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France.
| | - S Pecorario
- Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France.
| | - S Thébaud
- Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France.
| | - G Bouzerar
- Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France.
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41
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Wang R, Zobeiri H, Xie Y, Wang X, Zhang X, Yue Y. Distinguishing Optical and Acoustic Phonon Temperatures and Their Energy Coupling Factor under Photon Excitation in nm 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000097. [PMID: 32670758 PMCID: PMC7341092 DOI: 10.1002/advs.202000097] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2020] [Revised: 04/10/2020] [Indexed: 06/11/2023]
Abstract
Under photon excitation, 2D materials experience cascading energy transfer from electrons to optical phonons (OPs) and acoustic phonons (APs). Despite few modeling works, it remains a long-history open problem to distinguish the OP and AP temperatures, not to mention characterizing their energy coupling factor (G). Here, the temperatures of longitudinal/transverse optical (LO/TO) phonons, flexural optical (ZO) phonons, and APs are distinguished by constructing steady and nanosecond (ns) interphonon branch energy transport states and simultaneously probing them using nanosecond energy transport state-resolved Raman spectroscopy. ΔT OP -AP is measured to take more than 30% of the Raman-probed temperature rise. A breakthrough is made on measuring the intrinsic in-plane thermal conductivity of suspended nm MoS2 and MoSe2 by completely excluding the interphonon cascading energy transfer effect, rewriting the Raman-based thermal conductivity measurement of 2D materials. G OP↔AP for MoS2, MoSe2, and graphene paper (GP) are characterized. For MoS2 and MoSe2, G OP↔AP is in the order of 1015 and 1014 W m-3 K-1 and G ZO↔AP is much smaller than G LO/TO↔AP. Under ns laser excitation, G OP↔AP is significantly increased, probably due to the reduced phonon scattering time by the significantly increased hot carrier population. For GP, G LO/TO↔AP is 0.549 × 1016 W m-3 K-1, agreeing well with the value of 0.41 × 1016 W m-3 K-1 by first-principles modeling.
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Affiliation(s)
- Ridong Wang
- State Key Laboratory of Precision Measuring Technology and InstrumentsTianjin UniversityTianjin300072P. R. China
| | - Hamidreza Zobeiri
- Department of Mechanical EngineeringIowa State UniversityAmesIA50011USA
| | - Yangsu Xie
- College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhenGuangdong518055P. R. China
| | - Xinwei Wang
- Department of Mechanical EngineeringIowa State UniversityAmesIA50011USA
| | - Xing Zhang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of EducationDepartment of Engineering MechanicsTsinghua UniversityBeijing100084P. R. China
| | - Yanan Yue
- School of Power and Mechanical EngineeringWuhan UniversityWuhan430072P. R. China
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42
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Yang X, Zheng X, Liu Q, Zhang T, Bai Y, Yang Z, Chen H, Liu M. Experimental Study on Thermal Conductivity and Rectification in Suspended Monolayer MoS 2. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28306-28312. [PMID: 32478499 DOI: 10.1021/acsami.0c07544] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Thermal rectification is an attractive phenomenon for thermal management, which refers to a specific behavior in a heat transfer system where heat flow in one direction is stronger than that in the opposite direction under the same conditions. Two-dimensional monolayer molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD) has exhibited exceptional thermal, optical, and electrical properties due to its special structure; however, the thermal rectification in monolayer MoS2 is still not achieved by experimental measurement. Here, we successfully transferred monolayer MoS2 samples with three geometrical morphologies to the suspended microelectrodes by the PMMA approach. Through further heating the suspended microelectrodes with AC power in the opposite directions of these three monolayer MoS2 samples, we experimentally measured the thermal conductivity and first obtained the thermal rectification of monolayer MoS2. The rectification coefficients of monolayer MoS2 with three different geometrical morphologies are 10-13, 11-4, and 69-70%. Moreover, a theoretical model was also applied to discuss the dependence of thermal rectification on the geometrical asymmetry (angle and spacing). The results demonstrate that the monolayer MoS2 has an obvious thermal rectification phenomenon owing to the asymmetric structure, and it would have great potentials in the application of thermal energy control and management.
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Affiliation(s)
- Xiao Yang
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinghua Zheng
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Center for Excellence in Complex System Mechanics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qiushi Liu
- University of California at Riverside, Riverside, California 92521, United States
| | - Ting Zhang
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ye Bai
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheng Yang
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
| | - Haisheng Chen
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ming Liu
- University of California at Riverside, Riverside, California 92521, United States
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43
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Marfoua B, Lim YS, Hong J. Anomalous in-plane lattice thermal conductivity in an atomically thin two-dimensional α-GeTe layer. Phys Chem Chem Phys 2020; 22:12273-12280. [PMID: 32432248 DOI: 10.1039/d0cp00738b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Low lattice thermal conductivity is one of the most important physical quantities for phononic device applications. Thus, we investigated the in-plane lattice thermal conductivity of mono- and bi-layer α-GeTe systems. The lattice thermal conductivity of the monolayer system along the zigzag direction was 0.43 (W mK-1) while it was 0.21 (W mK-1) along the armchair direction at 300 K, and the lattice thermal conductivity mostly originated from the out-of-plane acoustic mode. In the bilayer system, it was significantly suppressed to 0.044 (W mK-1) and 0.047 (W mK-1) along the zigzag and armchair directions, respectively, at 300 K. Particularly, the out-of-plane acoustic mode in the bilayer had a tremendous Grüneisen parameter and this led to an ultralow in-plane lattice thermal conductivity in the bilayer, and the optical mode dominated the contribution to the lattice thermal conductivity. Our findings may raise intriguing issues regarding the thermoelectric effect, heat insulators, and phononic device applications, and stimulate further experimental studies to verify our theoretical predictions.
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Affiliation(s)
- Brahim Marfoua
- Department of Physics, Pukyong National University, Busan 608-737, Korea.
| | - Young Soo Lim
- Department of Materials System Engineering, Pukyong National University, Busan 48513, Korea
| | - Jisang Hong
- Department of Physics, Pukyong National University, Busan 608-737, Korea.
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44
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Zhao Y, Zheng M, Wu J, Huang B, Thong JTL. Studying thermal transport in suspended monolayer molybdenum disulfide prepared by a nano-manipulator-assisted transfer method. NANOTECHNOLOGY 2020; 31:225702. [PMID: 32053806 DOI: 10.1088/1361-6528/ab7647] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The thermal transport of monolayer MoS2, grown by chemical vapor deposition (CVD) method, was studied in this work. A novel approach was developed to transfer monolayer MoS2 onto suspended microelectrothermal system device, where a nano-manipulator in a scanning electron microscope was employed to accomplish the feat. This nano-manipulator-assisted transferring gives a high sample yield with relatively good sample quality compared to the traditional wet/dry transfer methods. Temperature-dependent thermal conductivity of monolayer MoS2 was measured by suspended-pads thermal bridge technique, with thermal conductivity value slightly lower than the exfoliated samples due to the phonon-defects scattering for CVD grown samples. Further extension of the current transfer method was demonstrated on few-layer graphite, where suspended graphite flakes that were free of surface ripples and with high thermal conductance were shown.
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Affiliation(s)
- Yunshan Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
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45
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Zobeiri H, Xu S, Yue Y, Zhang Q, Xie Y, Wang X. Effect of temperature on Raman intensity of nm-thick WS 2: combined effects of resonance Raman, optical properties, and interface optical interference. NANOSCALE 2020; 12:6064-6078. [PMID: 32129391 DOI: 10.1039/c9nr10186a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Temperature dependent Raman intensity of 2D materials features very rich information about the material's electronic structure, optical properties, and nm-level interface spacing. To date, there still lacks rigorous consideration of the combined effects. This renders the Raman intensity information less valuable in material studies. In this work, the Raman intensity of four supported multilayered WS2 samples are studied from 77 K to 757 K under 532 nm laser excitation. Resonance Raman scattering is observed, and we are able to evaluate the excitonic transition energy of B exciton and its broadening parameters. However, the resonance Raman effects cannot explain the Raman intensity variation in the high temperature range (room temperature to 757 K). The thermal expansion mismatch between WS2 and Si substrate at high temperatures (room temperature to 757 K) make the optical interference effects very strong and enhances the Raman intensity significantly. This interference effect is studied in detail by rigorously calculating and considering the thermal expansion of samples, the interface spacing change, and the optical indices change with temperature. Considering all of the above factors, it is concluded that the temperature dependent Raman intensity of the WS2 samples cannot be solely interpreted by its resonance behavior. The interface optical interference impacts the Raman intensity more significantly than the change of refractive indices with temperature.
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Affiliation(s)
- Hamidreza Zobeiri
- Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011, USA.
| | - Shen Xu
- School of Mechanical and Automotive Engineering, Shanghai University of Engineering Science, 333 Longteng Road, Shanghai 201620, People's Republic of China
| | - Yanan Yue
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, People's Republic of China
| | - Qianying Zhang
- College of Metallurgy and Material Engineering, Chongqing University of Science & Technology, University Town, Huxi Shapingba District, Chongqing, 401331, People's Republic of China
| | - Yangsu Xie
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, Guangdong 518055, People's Republic of China.
| | - Xinwei Wang
- Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011, USA.
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46
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Murthy AA, Stanev TK, Dos Reis R, Hao S, Wolverton C, Stern NP, Dravid VP. Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides. ACS NANO 2020; 14:1569-1576. [PMID: 32003564 DOI: 10.1021/acsnano.9b06581] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Layered transition metal dichalcogenides offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of nonuniform heating and preferential oxidation at grain boundary sites in these materials.
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47
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Kargar F, Coleman EA, Ghosh S, Lee J, Gomez MJ, Liu Y, Magana AS, Barani Z, Mohammadzadeh A, Debnath B, Wilson RB, Lake RK, Balandin AA. Phonon and Thermal Properties of Quasi-Two-Dimensional FePS 3 and MnPS 3 Antiferromagnetic Semiconductors. ACS NANO 2020; 14:2424-2435. [PMID: 31951116 DOI: 10.1021/acsnano.9b09839] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. Raman spectroscopy was conducted using three different excitation lasers with wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). UV-Raman spectroscopy reveals spectral features which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 ± 0.32 W m-1 K-1 at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 are 0.85 ± 0.15 and 2.7 ± 0.3 W m-1 K-1, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 ± 0.2 W m-1 K-1 through-plane and 6.3 ± 1.7 W m-1 K-1 in-plane. The data obtained by the two techniques are in agreement and reveal strong thermal anisotropy of the films and the dominance of phonon contribution to heat conduction. The obtained results are important for the interpretation of electric switching experiments with antiferromagnetic materials as well as for the proposed applications of the antiferromagnetic semiconductors in spintronic devices.
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Affiliation(s)
- Fariborz Kargar
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Ece A Coleman
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Subhajit Ghosh
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Jonathan Lee
- Mechanical Engineering Department and Materials Science and Engineering Program , University of California , Riverside , California 92521 , United States
| | - Michael J Gomez
- Mechanical Engineering Department and Materials Science and Engineering Program , University of California , Riverside , California 92521 , United States
| | - Yuhang Liu
- Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Andres Sanchez Magana
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zahra Barani
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Amirmahdi Mohammadzadeh
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Bishwajit Debnath
- Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Richard B Wilson
- Mechanical Engineering Department and Materials Science and Engineering Program , University of California , Riverside , California 92521 , United States
- Spins and Heat in Nanoscale Electronic Systems (SHINES) Center , University of California , Riverside , California 92521 , United States
| | - Roger K Lake
- Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
- Spins and Heat in Nanoscale Electronic Systems (SHINES) Center , University of California , Riverside , California 92521 , United States
| | - Alexander A Balandin
- Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
- Spins and Heat in Nanoscale Electronic Systems (SHINES) Center , University of California , Riverside , California 92521 , United States
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48
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Majee BP, Singh A, Prakash R, Mishra AK. Large Area Vertically Oriented Few-Layer MoS 2 for Efficient Thermal Conduction and Optoelectronic Applications. J Phys Chem Lett 2020; 11:1268-1275. [PMID: 32003998 DOI: 10.1021/acs.jpclett.9b03726] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Large area growth of MoS2 can show great advances in optoelectronic devices due to its unique optical and electronic properties. Here, we directly grow vertically oriented and interconnected few-layer MoS2 over 1 × 1 cm2 of p-type Si substrate using CVD technique. We report for the first time the thermal conductivity of vertically oriented few-layer (VFL) MoS2 using the optothermal Raman technique. The reduced phonon-defect scattering due to minimal defects and strains in VFL MoS2 results in excellent thermal conductivity of 100 ± 14 W m-1 K-1 at room temperature. The photoluminescence and DFT study confirm the semiconducting behavior of VFL-MoS2. The VFL-MoS2/Si photodiode shows high photoresponsivity of 7.37 A W-1 at -2.0 V bias under 0.15 mW cm-2 intensity of 532 nm laser. The enhanced light trapping and highly exposed edges of VFL MoS2 due to vertical orientation, formation of efficient p-n junction at the MoS2/Si interface and effective charge separation leads to the excellent performance of grown VFL-MoS2 for optoelectronic applications.
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Affiliation(s)
- Bishnu Pada Majee
- School of Materials Science and Technology , Indian Institute of Technology (Banaras Hindu University) , Varanasi 221005 , India
| | - Ankita Singh
- School of Materials Science and Technology , Indian Institute of Technology (Banaras Hindu University) , Varanasi 221005 , India
| | - Rajiv Prakash
- School of Materials Science and Technology , Indian Institute of Technology (Banaras Hindu University) , Varanasi 221005 , India
| | - Ashish Kumar Mishra
- School of Materials Science and Technology , Indian Institute of Technology (Banaras Hindu University) , Varanasi 221005 , India
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49
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Physical and chemical descriptors for predicting interfacial thermal resistance. Sci Data 2020; 7:36. [PMID: 32015329 PMCID: PMC6997172 DOI: 10.1038/s41597-020-0373-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/02/2019] [Accepted: 01/07/2020] [Indexed: 11/30/2022] Open
Abstract
Heat transfer at interfaces plays a critical role in material design and device performance. Higher interfacial thermal resistances (ITRs) affect the device efficiency and increase the energy consumption. Conversely, higher ITRs can enhance the figure of merit of thermoelectric materials by achieving ultra-low thermal conductivity via nanostructuring. This study proposes a dataset of descriptors for predicting the ITRs. The dataset includes two parts: one part consists of ITRs data collected from 87 experimental papers and the other part consists of the descriptors of 289 materials, which can construct over 80,000 pair-material systems for ITRs prediction. The former part is composed of over 1300 data points of metal/nonmetal, nonmetal/nonmetal, and metal/metal interfaces. The latter part consists of physical and chemical properties that are highly correlated to the ITRs. The synthesis method of the materials and the thermal measurement technique are also recorded in the dataset for further analyses. These datasets can be applied not only to ITRs predictions but also to thermal-property predictions or heat transfer on various material systems. Measurement(s) | material entity • interface • Material Description | Technology Type(s) | machine learning • digital curation |
Machine-accessible metadata file describing the reported data: 10.6084/m9.figshare.11618253
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Zhang J, Li X, Xiao K, Sumpter BG, Ghosh AW, Liang L. The role of mid-gap phonon modes in thermal transport of transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:025306. [PMID: 31581144 DOI: 10.1088/1361-648x/ab4aaa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We present a comprehensive theoretical study on thermal transport in monolayer transition metal dichalcogenides MX2 (M: Mo, W; X: S, Se) with various sample sizes. An unusually high anharmonic scattering strength is found in MoSe2 compared to the other three family members, which arises from its unique phonon band dispersion, specifically the mid-frequency phonon branches associated with the vibrations of Se atoms of MoSe2. The mid-frequency modes almost completely span the gap that exists between the high-frequency phonon branches and the acoustic ones, allowing the former to readily decay into the latter. The resultant high anharmonic scattering gives rise to a short mean free path which makes the room temperature in-plane thermal conductivity in MoSe2 even lower than WSe2 when the sample length is larger than 51.5 nm. With varying sample sizes, the ordering of thermal conductivity among the four materials changes as phonon transport transits from the ballistic to diffusive regime, driven by the competition between the phonon frequency spectrum range and the scattering strength. Our work provides a microscopic picture of phonon transport in TMDs and guidance to tailor their thermal conductivities for electronic and thermoelectric applications.
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Affiliation(s)
- Jingjie Zhang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN-37831, United States of America. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA-22904, United States of America
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