1
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Lee SJ, Chuang HJ, Yeats AL, McCreary KM, O'Hara DJ, Jonker BT. Ferroelectric Modulation of Quantum Emitters in Monolayer WS 2. ACS NANO 2024; 18:25349-25358. [PMID: 39179534 DOI: 10.1021/acsnano.4c10528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2024]
Abstract
Quantum photonics promises significant advances in secure communications, metrology, sensing, and information processing/computation. Single-photon sources are fundamental to this endeavor. However, the lack of high-quality single photon sources remains a significant obstacle. We present here a paradigm for the control of single photon emitters (SPEs) and single photon purity by integrating monolayer WS2 with the organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)). We demonstrate that the ferroelectric domains in the P(VDF-TrFE) film control the purity of single photon emission from the adjacent WS2. By switching the ferroelectric polarization, we reversibly tune the single photon purity between the semiclassical and quantum light regimes, with single photon purities as high as 94%. This demonstrates a method for modulating and encoding quantum photonic information, complementing more complex approaches. This multidimensional heterostructure introduces an approach for control of quantum emitters by combining the nonvolatile ferroic properties of a ferroelectric with the radiative properties of the zero-dimensional atomic-scale emitters embedded in the two-dimensional WS2 semiconductor monolayer.
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Affiliation(s)
- Sung-Joon Lee
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Hsun-Jen Chuang
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Andrew L Yeats
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Kathleen M McCreary
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Dante J O'Hara
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Berend T Jonker
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
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2
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Kim G, Huet B, Stevens CE, Jo K, Tsai JY, Bachu S, Leger M, Song S, Rahaman M, Ma KY, Glavin NR, Shin HS, Alem N, Yan Q, Hendrickson JR, Redwing JM, Jariwala D. Confinement of excited states in two-dimensional, in-plane, quantum heterostructures. Nat Commun 2024; 15:6361. [PMID: 39069516 PMCID: PMC11284221 DOI: 10.1038/s41467-024-50653-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Accepted: 07/09/2024] [Indexed: 07/30/2024] Open
Abstract
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission (g2(0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
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Affiliation(s)
- Gwangwoo Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
- Department of Engineering Chemistry, Chungbuk National University, Cheongju, 28644, Republic of Korea
| | - Benjamin Huet
- 2D Crystal Consortium-Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Christopher E Stevens
- Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA
- KBR Inc, Beavercreek, OH, 45431, USA
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Jeng-Yuan Tsai
- Department of Physics, Northeastern University, Boston, MA, 02115, USA
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Meghan Leger
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Kyung Yeol Ma
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA
| | - Hyeon Suk Shin
- Department of Energy Science and Department of Chemistry, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Center for 2D Quantum Heterostructures, Institute of Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Nasim Alem
- 2D Crystal Consortium-Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Qimin Yan
- Department of Physics, Northeastern University, Boston, MA, 02115, USA
| | - Joshua R Hendrickson
- Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA
| | - Joan M Redwing
- 2D Crystal Consortium-Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
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3
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Adinehloo D, Hendrickson JR, Perebeinos V. Wetting and strain engineering of 2D materials on nanopatterned substrates. NANOSCALE ADVANCES 2024; 6:2823-2829. [PMID: 38817431 PMCID: PMC11134232 DOI: 10.1039/d3na01079a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Accepted: 03/31/2024] [Indexed: 06/01/2024]
Abstract
The fascinating realm of strain engineering and wetting transitions in two-dimensional (2D) materials takes place when placed on a two-dimensional array of nanopillars or one-dimensional rectangular grated substrates. Our investigation encompasses a diverse set of atomically thin 2D materials, including transition metal dichalcogenides, hexagonal boron nitride, and graphene, with a keen focus on the impact of van der Waals adhesion energies to the substrate on the wetting/dewetting behavior on nanopatterned substrates. We find a critical aspect ratio of the nanopillar or grating heights to the period of the pattern when the wetting/dewetting transition occurs. Furthermore, energy hysteresis analysis reveals dynamic detachment and re-engagement events during height adjustments, shedding light on energy barriers of 2D monolayer transferred on patterned substrates. Our findings offer avenues for strain engineering in 2D materials, leading to promising prospects for future technological applications.
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Affiliation(s)
- Davoud Adinehloo
- Department of Electrical Engineering, University at Buffalo Buffalo NY 14228 USA
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory Wright-Patterson AFB Ohio 45433 USA
| | - Vasili Perebeinos
- Department of Electrical Engineering, University at Buffalo Buffalo NY 14228 USA
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4
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Jo JS, Lee J, Choi C, Jang JW. Tip-based Lithography with a Sacrificial Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309484. [PMID: 38287738 DOI: 10.1002/smll.202309484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 12/07/2023] [Indexed: 01/31/2024]
Abstract
The fabrication of a highly controlled gold (Au) nanohole (NH) array via tip-based lithography is improved by incorporating a sacrificial layer-a tip-crash buffer layer. This inclusion mitigates scratches during the nano-indentation process by employing a 300 nm thick poly(methyl methacrylate) layer as a sacrificial layer on top of the Au film. Such a precaution ensures minimal scratches on the Au film, facilitating the creation of sub-50 nm Au NHs with a 15 nm gap between the Au NHs. The precision of this method exceeds that of fabricating Au NHs without a sacrificial layer. Demonstrating its versatility, this Au NH array is utilized in two distinct applications: as a dry etching mask to form a molybdenum disulfide hole array and as a catalyst in metal-assisted chemical etching, resulting in conical-shaped silicon nanostructures. Additionally, a significant electric field is generated when Au nanoparticles (NPs) are placed within the Au NHs. This effect arises from coupling electromagnetic waves, concentrated by the Au NHs and amplified by the Au NPs. A notable result of this configuration is the enhancement factor of surface-enhanced Raman scattering, which is an order of magnitude greater than that observed with just Au NHs and Au NPs alone.
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Affiliation(s)
- Jeong-Sik Jo
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jinho Lee
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Chiwon Choi
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jae-Won Jang
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
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5
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Jo K, Stevens CE, Choi B, El-Khoury PZ, Hendrickson JR, Jariwala D. Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface. NANO LETTERS 2024. [PMID: 38593418 DOI: 10.1021/acs.nanolett.3c03790] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.
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Affiliation(s)
- Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Christopher E Stevens
- KBR Inc., Beavercreek, Ohio 45431, United States
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB Ohio 45433, United States
| | - Bongjun Choi
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Patrick Z El-Khoury
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB Ohio 45433, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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6
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Velja S, Krumland J, Cocchi C. Electronic properties of MoSe 2 nanowrinkles. NANOSCALE 2024; 16:7134-7144. [PMID: 38501908 DOI: 10.1039/d3nr06261a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Mechanical deformations, either spontaneously occurring during sample preparation or purposely induced in their nanoscale manipulation, drastically affect the electronic and optical properties of transition metal dichalcogenide monolayers. In this first-principles work based on density-functional theory, we shed light on the interplay among strain, curvature, and electronic structure of MoSe2 nanowrinkles. We analyze their structural properties highlighting the effects of coexisting local domains of tensile and compressive strain in the same system. By contrasting the band structures of the nanowrinkles against counterparts obtained for flat monolayers subject to the same amount of strain, we clarify that the specific features of the former, such as the moderate variation of the band-gap size and its persisting direct nature, are ruled by curvature rather than strain. The analysis of the wave-function distribution indicates strain-dependent localization of the frontier states in the conduction region while in the valence, the sensitivity to strain is much less pronounced. The discussion about transport properties, based on inspection of the effective masses, reveals excellent perspectives for these systems as active components for (opto)electronic devices.
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Affiliation(s)
- Stefan Velja
- Institute of Physics, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg, Germany.
| | - Jannis Krumland
- Institute of Physics, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg, Germany.
- Department of Physics and IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Caterina Cocchi
- Institute of Physics, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg, Germany.
- Department of Physics and IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
- Center for Nanoscale Dynamics (CeNaD), Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg, Germany
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7
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Yanev ES, Darlington TP, Ladyzhets SA, Strasbourg MC, Trovatello C, Liu S, Rhodes DA, Hall K, Sinha A, Borys NJ, Hone JC, Schuck PJ. Programmable nanowrinkle-induced room-temperature exciton localization in monolayer WSe 2. Nat Commun 2024; 15:1543. [PMID: 38378789 PMCID: PMC10879107 DOI: 10.1038/s41467-024-45936-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 02/08/2024] [Indexed: 02/22/2024] Open
Abstract
Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate strain-localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. At cryogenic temperatures, antibunched emission is observed, confirming that the nanocone-induced strain is sufficiently large for the formation of quantum emitters. At 300 K, detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from the fine wrinkles, and show that the states can be tightly confined to regions <10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.
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Affiliation(s)
- Emanuil S Yanev
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Thomas P Darlington
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Sophia A Ladyzhets
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | | | - Chiara Trovatello
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Daniel A Rhodes
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Kobi Hall
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Aditya Sinha
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Nicholas J Borys
- Department of Physics, Montana State University, Bozeman, MT, USA.
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA.
| | - P James Schuck
- Department of Mechanical Engineering, Columbia University, New York, NY, USA.
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8
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Dai B, Su Y, Guo Y, Wu C, Xie Y. Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets. Chem Rev 2024; 124:420-454. [PMID: 38146851 DOI: 10.1021/acs.chemrev.3c00422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.
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Affiliation(s)
- Baohu Dai
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yueqi Su
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yuqiao Guo
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Changzheng Wu
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yi Xie
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
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9
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Kumar P, Chen J, Meng AC, Yang WCD, Anantharaman SB, Horwath JP, Idrobo JC, Mishra H, Liu Y, Davydov AV, Stach EA, Jariwala D. Observation of Sub-10 nm Transition Metal Dichalcogenide Nanocrystals in Rapidly Heated van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59693-59703. [PMID: 38090759 DOI: 10.1021/acsami.3c13471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with <10 nm size using ultrafast migration of vacancies at elevated temperatures. Through in situ and ex situ processing and using atomic-level characterization techniques, we analyzed the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk: i.e., uniform mono- and multilayers. Further, our in situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions.
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Affiliation(s)
- Pawan Kumar
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Inter-university Microelectronics Center (IMEC), Leuven 3001, Belgium
| | - Jiazheng Chen
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Andrew C Meng
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Wei-Chang D Yang
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Low-dimensional Semiconductors Lab, Metallurgical and Materials Engineering, Indian Institute of Technology-Madras, Chennai, Tamilnadu 600036, India
| | - James P Horwath
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Juan C Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
- Materials Science & Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Himani Mishra
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States
| | - Yuanyue Liu
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States
| | - Albert V Davydov
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Eric A Stach
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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10
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Zhou J, Thomas JC, Barre E, Barnard ES, Raja A, Cabrini S, Munechika K, Schwartzberg A, Weber-Bargioni A. Near-Field Coupling with a Nanoimprinted Probe for Dark Exciton Nanoimaging in Monolayer WSe 2. NANO LETTERS 2023. [PMID: 37262350 DOI: 10.1021/acs.nanolett.3c00621] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Tip-enhanced photoluminescence (TRPL) is a powerful technique for spatially and spectrally probing local optical properties of 2-dimensional (2D) materials that are modulated by the local heterogeneities, revealing inaccessible dark states due to bright state overlap in conventional far-field microscopy at room temperature. While scattering-type near-field probes have shown the potential to selectively enhance and reveal dark exciton emission, their technical complexity and sensitivity can pose challenges under certain experimental conditions. Here, we present a highly reproducible and easy-to-fabricate near-field probe based on nanoimprint lithography and fiber-optic excitation and collection. The novel near-field measurement configuration provides an ∼3 orders of magnitude out-of-plane Purcell enhancement, diffraction-limited excitation spot, and subdiffraction hyperspectral imaging resolution (below 50 nm) of dark exciton emission. The effectiveness of this high spatial XD mapping technique was then demonstrated through reproducible hyperspectral mapping of oxidized sites and bubble areas.
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Affiliation(s)
- Junze Zhou
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - John C Thomas
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Elyse Barre
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Edward S Barnard
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Archana Raja
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Stefano Cabrini
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Keiko Munechika
- HighRI Optics, Inc. 5401 Broadway Ter 304, Oakland, California 94618, United States
| | - Adam Schwartzberg
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Alexander Weber-Bargioni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
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11
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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12
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Jo K, Marino E, Lynch J, Jiang Z, Gogotsi N, Darlington TP, Soroush M, Schuck PJ, Borys NJ, Murray CB, Jariwala D. Direct nano-imaging of light-matter interactions in nanoscale excitonic emitters. Nat Commun 2023; 14:2649. [PMID: 37156799 PMCID: PMC10167231 DOI: 10.1038/s41467-023-38189-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 04/12/2023] [Indexed: 05/10/2023] Open
Abstract
Strong light-matter interactions in localized nano-emitters placed near metallic mirrors have been widely reported via spectroscopic studies in the optical far-field. Here, we report a near-field nano-spectroscopic study of localized nanoscale emitters on a flat Au substrate. Using quasi 2-dimensional CdSe/CdxZn1-xS nanoplatelets, we observe directional propagation on the Au substrate of surface plasmon polaritons launched from the excitons of the nanoplatelets as wave-like fringe patterns in the near-field photoluminescence maps. These fringe patterns were confirmed via extensive electromagnetic wave simulations to be standing-waves formed between the tip and the edge-up assembled nano-emitters on the substrate plane. We further report that both light confinement and in-plane emission can be engineered by tuning the surrounding dielectric environment of the nanoplatelets. Our results lead to renewed understanding of in-plane, near-field electromagnetic signal transduction from the localized nano-emitters with profound implications in nano and quantum photonics as well as resonant optoelectronics.
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Affiliation(s)
- Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Emanuele Marino
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104, USA
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, Via Archirafi 36, 90123, Palermo, Italy
| | - Jason Lynch
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Zhiqiao Jiang
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Natalie Gogotsi
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Thomas P Darlington
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Mohammad Soroush
- Departement of Physics, Montana State University, Bozeman, MT, 59717, USA
| | - P James Schuck
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Nicholas J Borys
- Departement of Physics, Montana State University, Bozeman, MT, 59717, USA
| | - Christopher B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
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13
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Singh S, Gong W, Stevens CE, Hou J, Singh A, Zhang H, Anantharaman SB, Mohite AD, Hendrickson JR, Yan Q, Jariwala D. Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures. ACS NANO 2023; 17:7487-7497. [PMID: 37010369 DOI: 10.1021/acsnano.2c12546] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.
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Affiliation(s)
- Simrjit Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Applied Physics and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, 5612 AZ, The Netherlands
| | - Weiyi Gong
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Christopher E Stevens
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- KBR Inc., Beavercreek, Ohio 45431, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Aditya Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Huiqin Zhang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Surendra B Anantharaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Aditya D Mohite
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Qimin Yan
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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14
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Araujo FDV, Silva FWN, Zhang T, Zhou C, Lin Z, Perea-Lopez N, Rodrigues SF, Terrones M, Souza Filho AG, Alencar RS, Viana BC. Substrate-Induced Changes on the Optical Properties of Single-Layer WS 2. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2591. [PMID: 37048884 PMCID: PMC10095963 DOI: 10.3390/ma16072591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Revised: 03/16/2023] [Accepted: 03/17/2023] [Indexed: 06/19/2023]
Abstract
Among the most studied semiconducting transition metal dichalcogenides (TMDCs), WS2 showed several advantages in comparison to their counterparts, such as a higher quantum yield, which is an important feature for quantum emission and lasing purposes. We studied transferred monolayers of WS2 on a drilled Si3N4 substrate in order to have insights about on how such heterostructure behaves from the Raman and photoluminescence (PL) measurements point of view. Our experimental findings showed that the Si3N4 substrate influences the optical properties of single-layer WS2. Beyond that, seeking to shed light on the causes of the PL quenching observed experimentally, we developed density functional theory (DFT) based calculations to study the thermodynamic stability of the heterojunction through quantum molecular dynamics (QMD) simulations as well as the electronic alignment of the energy levels in both materials. Our analysis showed that along with strain, a charge transfer mechanism plays an important role for the PL decrease.
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Affiliation(s)
- F. D. V. Araujo
- Instituto Federal de Educação, Ciência e Tecnologia do Piauí-Campus Campo Maior, Avenida Raimundo Doca da Silva, S/N-Fazendinha, Campo Maior 64280-000, Piauí, Brazil
- LIMAV—Laboratório Interdisciplinar de Materiais Avançados, Programa de Pós-Graduação em Engenharia e Ciência dos Materiais (PPGCM), Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
| | - F. W. N. Silva
- Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Alcântara, Alcântara 65250-000, Maranhão, Brazil
- Programa de Pós-Graduação em Engenharia de Materiais (PPGEM), Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Monte Castelo, Avenida Getúlio Vargas, Nº 04, São Luís 65030-005, Maranhão, Brazil
| | - T. Zhang
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - C. Zhou
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Zhong Lin
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Nestor Perea-Lopez
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Samuel F. Rodrigues
- LIMAV—Laboratório Interdisciplinar de Materiais Avançados, Programa de Pós-Graduação em Engenharia e Ciência dos Materiais (PPGCM), Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
- Programa de Pós-Graduação em Engenharia de Materiais (PPGEM), Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Monte Castelo, Avenida Getúlio Vargas, Nº 04, São Luís 65030-005, Maranhão, Brazil
| | - Mauricio Terrones
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | | | - R. S. Alencar
- Faculdade de Física, Universidade Federal do Pará, Belém 66075-110, Pará, Brazil
| | - Bartolomeu C. Viana
- LIMAV—Laboratório Interdisciplinar de Materiais Avançados, Programa de Pós-Graduação em Engenharia e Ciência dos Materiais (PPGCM), Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
- Departamento de Física, Campus Ministro Petrônio Portella, Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
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15
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Xu DD, Vong AF, Lebedev D, Ananth R, Wong AM, Brown PT, Hersam MC, Mirkin CA, Weiss EA. Conversion of Classical Light Emission from a Nanoparticle-Strained WSe 2 Monolayer into Quantum Light Emission via Electron Beam Irradiation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208066. [PMID: 36373540 DOI: 10.1002/adma.202208066] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Revised: 10/19/2022] [Indexed: 06/16/2023]
Abstract
Solid-state single photon emitters (SPEs) within atomically thin transition metal dichalcogenides (TMDs) have recently attracted interest as scalable quantum light sources for quantum photonic technologies. Among TMDs, WSe2 monolayers (MLs) are promising for the deterministic fabrication and engineering of SPEs using local strain fields. The ability to reliably produce isolatable SPEs in WSe2 is currently impeded by the presence of numerous spectrally overlapping states that occur at strained locations. Here nanoparticle (NP) arrays with precisely defined positions and sizes are employed to deterministically create strain fields in WSe2 MLs, thus enabling the systematic investigation and control of SPE formation. Using this platform, electron beam irradiation at NP-strained locations transforms spectrally overlapped sub-bandgap emission states into isolatable, anti-bunched quantum emitters. The dependence of the emission spectra of WSe2 MLs as a function of strain magnitude and exposure time to electron beam irradiation is quantified and provides insight into the mechanism for SPE production. Excitons selectively funnel through strongly coupled sub-bandgap states introduced by electron beam irradiation, which suppresses spectrally overlapping emission pathways and leads to measurable anti-bunched behavior. The findings provide a strategy to generate isolatable SPEs in 2D materials with a well-defined energy range.
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Affiliation(s)
- David D Xu
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Albert F Vong
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Alexa M Wong
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Paul T Brown
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Chad A Mirkin
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
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16
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Beagle LK, Moore DC, Kim G, Tran LD, Miesle P, Nguyen C, Fang Q, Kim KH, Prusnik TA, Newburger M, Rao R, Lou J, Jariwala D, Baldwin LA, Glavin NR. Microwave Facilitated Covalent Organic Framework/Transition Metal Dichalcogenide Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46876-46883. [PMID: 36194531 DOI: 10.1021/acsami.2c14341] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Organic/inorganic heterostructures present a versatile platform for creating materials with new functionalities and hybrid properties. In particular, junctions between two dimensional materials have demonstrated utility in next generation electronic, optical, and optoelectronic devices. This work pioneers a microwave facilitated synthesis process to readily incorporate few-layer covalent organic framework (COF) films onto monolayer transition metal dichalcogenides (TMDC). Preferential microwave excitation of the monolayer TMDC flakes result in selective attachment of COFs onto the van der Waals surface with film thicknesses between 1 and 4 nm. The flexible process is extended to multiple TMDCs (MoS2, MoSe2, MoSSe) and several well-known COFs (TAPA-PDA COF, TPT-TFA-COF, and COF-5). Photoluminescence studies reveal a power-dependent defect formation in the TMDC layer, which facilitates electronic coupling between the materials at higher TMDC defect densities. This coupling results in a shift in the A-exciton peak location of MoSe2, with a red or blue shift of 50 or 19 meV, respectively, depending upon the electron donating character of the few-layer COF films. Moreover, optoelectronic devices fabricated from the COF-5/TMDC heterostructure present an opportunity to tune the PL intensity and control the interaction dynamics within inorganic/organic heterostructures.
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Affiliation(s)
- Lucas K Beagle
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- UES, Inc., Beavercreek, Ohio 45432, United States
| | - David C Moore
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- UES, Inc., Beavercreek, Ohio 45432, United States
| | - Gwangwoo Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Ly D Tran
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- UES, Inc., Beavercreek, Ohio 45432, United States
| | - Paige Miesle
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- UES, Inc., Beavercreek, Ohio 45432, United States
| | - Christine Nguyen
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Qiyi Fang
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | | | - Michael Newburger
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Rahul Rao
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Jun Lou
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Luke A Baldwin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
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