Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy

Lateral heterostructures of WS2 and MoS2 monolayers for photo-synaptic transistor

Von Neumann architecture-based computing, while widely successful in personal computers and embedded systems, faces inherent challenges including the von Neumann bottleneck, particularly amidst the ongoing surge of data-intensive tasks. Neuromorphic computing, designed to integrate arithmetic, logic, and memory operations, has emerged as a promising solution for improving energy efficiency and performance. This approach requires the construction of an artificial synaptic device that can simultaneously perform signal processing, learning, and memory operations. We present a photo-synaptic device with 32 analog multi-states by exploiting field-effect transistors based on the lateral heterostructures of two-dimensional (2D) WS2 and MoS2 monolayers, formed through a two-step metal-organic chemical vapor deposition process. These lateral heterostructures offer high photoresponsivity and enhanced efficiency of charge trapping at the interface between the heterostructures and SiO2 due to the presence of the WS2 monolayer with large trap densities. As a result, it enables the photo-synaptic transistor to implement synaptic behaviors of long-term plasticity and high recognition accuracy. To confirm the feasibility of the photo-synapse, we investigated its synaptic characteristics under optical and electrical stimuli, including the retention of excitatory post-synaptic currents, potentiation, habituation, nonlinearity factor, and paired-pulse facilitation. Our findings suggest the potential of versatile 2D material-synapse with a high density of device integration.

Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction

Two-dimensional (2D) materials stand as a promising platform for tunnel field-effect transistors (TFETs) in the pursuit of low-power electronics for the Internet of Things era. This promise arises from their dangling bond-free van der Waals heterointerface. Nevertheless, the attainment of high device performance is markedly impeded by the requirement of precise control over the 2D assembly with multiple stacks of different layers. In this study, we addressed a thickness-modulated n/p+-homojunction prepared from Nb-doped p+-MoS2 crystal, where the issue on interface traps can be neglected without any external interface control due to the homojunction. Notably, our observations reveal the existence of a negative differential resistance, even at room temperature (RT). This signifies the successful realization of TFET operation under type III band alignment conditions by a single gate at RT, suggesting that the dominant current mechanism is band-to-band tunneling due to the ideal interface.

Ultrafast Charge Transfer and Recombination Dynamics in Monolayer-Multilayer WSe2 Junctions Revealed by Time-Resolved Photoemission Electron Microscopy

The ultrafast carrier dynamics of junctions between two chemically identical, but electronically distinct, transition metal dichalcogenides (TMDs) remains largely unknown. Here, we employ time-resolved photoemission electron microscopy (TR-PEEM) to probe the ultrafast carrier dynamics of a monolayer-to-multilayer (1L-ML) WSe2 junction. The TR-PEEM signals recorded for the individual components of the junction reveal the sub-ps carrier cooling dynamics of 1L- and 7L-WSe2, as well as few-ps exciton-exciton annihilation occurring on 1L-WSe2. We observe ultrafast interfacial hole (h) transfer from 1L- to 7L-WSe2 on an ∼0.2 ps time scale. The resultant excess h density in 7L-WSe2 decays by carrier recombination across the junction interface on an ∼100 ps time scale. Reminiscent of the behavior at a depletion region, the TR-PEEM image reveals the h density accumulation on the 7L-WSe2 interface, with a decay length ∼0.60 ± 0.17 μm. These charge transfer and recombination dynamics are in agreement with ab initio quantum dynamics. The computed orbital densities reveal that charge transfer occurs from the basal plane, which extends over both 1L and ML regions, to the upper plane localized on the ML region. This mode of charge transfer is distinctive to chemically homogeneous junctions of layered materials and constitutes an additional carrier deactivation pathway that should be considered in studies of 1L-TMDs found alongside their ML, a common occurrence in exfoliated samples.

Electroluminescence from Megasonically Solution-Processed MoS2 Nanosheet Films

Due to their superior optoelectronic properties, monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for electroluminescent devices. However, challenges in isolating optoelectronically active TMD monolayers using scalable liquid phase exfoliation have precluded electroluminescence in large-area, solution-processed TMD films. Here, we overcome these limitations and demonstrate electroluminescence from molybdenum disulfide (MoS2) nanosheet films by employing a monolayer-rich MoS2 ink produced by electrochemical intercalation and megasonic exfoliation. Characteristic monolayer MoS2 photoluminescence and electroluminescence spectral peaks at 1.88-1.90 eV are observed in megasonicated MoS2 films, with the emission intensity increasing with film thickness over the range 10-70 nm. Furthermore, employing a vertical light-emitting capacitor architecture enables uniform electroluminescence in large-area devices. These results indicate that megasonically exfoliated MoS2 monolayers retain their direct bandgap character in electrically percolating thin films even following multistep solution processing. Overall, this work establishes megasonicated MoS2 inks as an additive manufacturing platform for flexible, patterned, and miniaturized light sources that can likely be expanded to other TMD semiconductors.

Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS2 Field Effect Transistor

With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. Recent works have reported the usefulness of 2D transition metal dichalcogenides (TMDs) like MoS₂ in MOSFET fabrication due to their enhanced active surface area, thin body, and non-zero bandgap. However, a systematic study on the effects of geometric scaling down to sub-10-nm nodes on the performance of MoS₂ MOSFETs is lacking. Here, the authors present an extensive study on the performance of MoS₂ FETs when geometrically scaled down to the sub-10 nm range. Transport properties are modelled using drift-diffusion equations in the classical regime and self-consistent Schrödinger-Poisson solution using NEGF formulation in the quantum regime. By employing the device modeling tool COMSOL for the classical regime, drain current vs. gate voltage (I_D vs. V_GS) plots were simulated. On the other hand, NEGF formulation for quantum regions is performed using MATLAB, and transfer characteristics are obtained. The effects of scaling device dimensions, such as channel length and contact length, are evaluated based on transfer characteristics by computing performance metrics like drain-induced barrier lowering (DIBL), on-off currents, subthreshold swing, and threshold voltage.

Pristine PN junction toward atomic layer devices

In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called "layer PN junction", that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers' dimension/precision, with record high rectification-ratio (>10⁵) and low cut-off current (<1 pA). More importantly, it spawns intriguing functionalities, like gate-switchable-rectification and noise-signal decoupled avalanching. Findings disclosed here might open up a path to develop novel nanodevice applications, where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

Spectral and polarization based imaging in deep-ultraviolet excited photoelectron microscopy

Using photoelectron emission microscopy, nanoscale spectral imaging of atomically thin MoS₂ buried between Al₂O₃ and SiO₂ is achieved by monitoring the wavelength and polarization dependence of the photoelectron signal excited by deep-ultraviolet light. Although photons induce the photoemission, images can exhibit resolutions below the photon wavelength as electrons sense the response. To validate this concept, the dependence of photoemission yield on the wavelength and polarization of the exciting light was first measured and then compared to simulations of the optical response quantified with classical optical theory. A close correlation between experiment and theory indicates that photoemission probes the optical interaction of UV-light with the material stack directly. The utility of this probe is then demonstrated when both the spectral and polarization dependence of photoemission observe spatial variation consistent with grains and defects in buried MoS₂. Taken together, these new modalities of photoelectron microscopy allow mapping of optical property variation at length scales unobtainable with conventional light-based microscopy.

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

Carrier transport was studied both numerically and experimentally using scanning photocurrent microscopy (SPCM) in two-dimensional (2D) transport structures, where the structure size in the third dimension is much smaller than the diffusion length and electrodes cover the whole terminal on both sides. Originally, one would expect that with increasing width in 2D transport structures, scanning photocurrent profiles will gradually deviate from those of the ideal one-dimensional (1D) transport structure. However, the scanning photocurrent simulation results surprisingly showed almost identical profiles from structures with different widths. In order to clarify this phenomenon, we observed the spatial distribution of carriers. The simulation results indicate that the integrated carrier distribution in the 2D transport structures with finite width can be well described by a simple-exponential-decay function with the carrier decay length as the fitting parameter, just like in the 1D transport structures. For ohmic-contact 2D transport structures, the feasibility of the fitting formula from our previous 1D analytical model was confirmed. On the other hand, the application of a simple-exponential-decay function in scanning photocurrent profiles for the diffusion length extraction in Schottky-contact 2D transport structures was also justified. Furthermore, our simulation results demonstrate that the scanning photocurrent profiles in the ohmic- or Schottky-contact three-dimensional (3D) transport structures with electrodes covering the whole terminal on both sides will reduce to those described by the corresponding 1D fitting formulae. Finally, experimental SPCM on a p-type InGaAs air-bridge two-terminal thin-film device was carried out. The measured photocurrent profiles can be well fitted by the specific fitting formula derived from our previous 1D analytical model and the extracted electron mobility-lifetime product of this thin-film device is 6.6 × 10^–7 cm²·V⁻¹. This study allows us to extract the minority carrier decay length and to obtain the mobility-lifetime product which can be used to evaluate the performance of 2D carrier transport devices.

Polarization-Driven Asymmetric Electronic Response of Monolayer Graphene to Polymer Zwitterions Probed from Both Sides

We investigated the nature of graphene surface doping by zwitterionic polymers and the implications of weak in-plane and strong through-plane screening using a novel sample geometry that allows direct access to either the graphene or the polymer side of a graphene/polymer interface. Using both Kelvin probe and electrostatic force microscopies, we observed a significant upshift in the Fermi level in graphene of ∼260 meV that was dominated by a change in polarizability rather than pure charge transfer with the organic overlayer. This physical picture is supported by density functional theory (DFT) calculations, which describe a redistribution of charge in graphene in response to the dipoles of the adsorbed zwitterionic moieties, analogous to a local DC Stark effect. Strong metallic-like screening of the adsorbed dipoles was observed by employing an inverted geometry, an effect identified by DFT to arise from a strongly asymmetric redistribution of charge confined to the side of graphene proximal to the zwitterion dipoles. Transport measurements confirm n-type doping with no significant impact on carrier mobility, thus demonstrating a route to desirable electronic properties in devices that combine graphene with lithographically patterned polymers.

Photoconversion efficiency in atomically thin TMDC-based heterostructures

Nowadays, two-dimensional materials such as graphene, phosphorene, and transition metal dichalcogenides (TMDCs) are widely employed in designing photovoltaic devices. Despite their atomically thin (AT) thicknesses, the high absorption of the TMDCs makes them a unique choice in designing solar absorptive heterostructures. In our exploration of finding the most efficient TMDC contacts for generating higher photocurrents, we carefully examined the physics behind the external and internal quantum efficiencies (EQEs and IQEs) of different AT heterostructures at the solar spectrum. By minute examination of the EQEs of the selected TMDC-based heterostructures, we show that the absorption of each consisting TMDC and the gradient of the electronic structure of them at their contact, determine mostly the photocurrent generation efficiency of the solar cells. The promising EQE (IQE) value of 0.5% (1.4%) is achieved in WSe₂/MoSe₂ contact at the wavelength of 433 nm. In the case of the multilayers of TMDCs, together with the light absorption increase of the multilayers the EQE of the heterostructures generally increases, while the competitive nature of the electronic structure gradient and the absorption makes this increase nonmonotonic. The TMDC-based heterostructures which are investigated in this work, pave a new way in designing miniaturized and efficient optoelectronic devices.

Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer-Bilayer Lateral Junction of MoSe2

Two-dimensional (2D) monolayer-bilayer (ML-BL) lateral junctions (LJs) have recently attracted attention due to their straightforward synthesis and resulting clean interface. Such systems consist of an extended ML with a secondary layer present only over half of the system, leading to an interface that is associated with the terminating edge of the secondary half layer. Our first-principles calculations reveal that the edges of the half layer completely lack reconstruction in the presence of unintentional dopants, in this case, Re. This observation is in startling contrast to the known physics of three-dimensional (3D) semiconductor surfaces where reconstruction has been widely observed. Herein, the electrostatics of the reduced dimensionality allows for greater separation between compensating defects, enabling dopants to remotely passivate edge states without needing to directly participate in the chemistry.

Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions

van der Waals materials exhibit naturally passivated surfaces and an ability to form versatile heterostructures to enable an examination of carrier transport mechanisms not seen in traditional materials. Here, we report a new type of homojunction termed a "band-bending junction" whose potential landscape depends solely on the difference in thickness between the two sides of the junction. Using MoS₂ on Au as a prototypical example, we find that surface potential differences can arise from the degree of vertical band bending in thin and thick regions. Furthermore, by using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of charge carriers generated at this junction and find that lateral carrier separation is enabled by differences in the band bending in the vertical direction, which we verify with simulations. Band-bending junctions may therefore enable new optoelectronic devices that rely solely on band bending arising from thickness variations to separate charge carriers.

Interplay between microstructure, defect states, and mobile charge generation in transition metal dichalcogenide heterojunctions

Two-dimensional transition metal dichalcogenides (2D-TMDCs) have gained attention for their promise in next-generation energy-harvesting and quantum computing technologies, but realizing these technologies requires a greater understanding of TMDC properties that influence their photophysics. To this end, we discuss here the interplay between TMDC microstructure and defects with the charge generation yield, lifetime, and mobility. As a model system, we compare monolayer-only and monolayer-rich MoS₂ grown by chemical vapor deposition, and we employ the TMDCs in Type-II charge-separating heterojunctions with semiconducting single-walled carbon nanotubes (s-SWCNTs). Our results suggest longer lifetimes and higher yields of mobile carriers in samples containing a small fraction of defect-rich multilayer islands on predominately monolayer MoS₂. Compared to the monolayer-only heterojunctions, the carrier lifetimes increase from 0.73 μs to 4.71 μs, the hole transfer yield increases from 23% to 34%, and the electron transfer yield increases from 39% to 59%. We reach these conclusions using a unique combination of microwave photoconductivity (which probes only mobile carriers) along with transient absorption spectroscopy (which identifies spectral signatures unique to each material and type of photoexcited quasiparticle, but does not probe mobility). Our results highlight the substantial changes in photophysics that can occur from small changes in TMDC microstructure and defect density, where the presence of defects does not necessarily preclude improvements in charge generation.

2D Homojunctions for Electronics and Optoelectronics

In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

An Ultrasensitive Gateless Photodetector Based on the 2D Bilayer MoS2-1D Si Nanowire-0D Ag Nanoparticle Hybrid Structure

Atomically thin transition metal dichalcogenides (TMDC) have received much attention due to their wide variety of optical and electronic properties. Among various TMDC materials, molybdenum disulfide (MoS₂) has been intensely studied owing to its potential applications in nanoelectronics and optoelectronics. However, two-dimensional MoS₂ photodetectors suffer from low responsivity due to low optical cross section. Combining MoS₂ with plasmonic nanostructures can drastically increase scattering cross section and enhance local light-matter interaction. Moreover, suspended MoS₂ has been shown to exhibit higher photoluminescence intensity and strong photogating effect, which can be employed in photodetectors. Herein, we propose an approach to utilize plasmonic nanostructures and physical suspension for 2D MoS₂ photosensing enhancement by hybridizing 2D bilayer MoS₂, 1D silicon nanowires, and 0D silver nanoparticles. The hybrid structure shows a gateless responsivity of 402.4 A/W at a wavelength of 532 nm, which represents the highest value among the ever reported gateless plasmonic MoS₂ photodetector. The great responsivity and large active area results in an exceptional detectivity of 2.34 × 10¹² Jones. This study provides a new approach for designing high-performance 2D TMDC-based optoelectronic devices.

Direct observation and manipulation of hot electrons at room temperature

In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.

Room-temperature valleytronic transistor

Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal-oxide-semiconductor (CMOS) technology^1-4. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature^4-7, demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae⁸ are used to selectively generate valley-polarized carriers in MoS₂ through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration^9-11 even without charge current, and can propagate over 18 μm by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials.

The prospective application of a graphene/MoS2 heterostructure in Si-HIT solar cells for higher efficiency

The efficiency of a Si-HIT (heterojunction with intrinsic thin layer) solar cell based on a graphene/MoS₂ heterostructure has been optimized by varying the various parameters of graphene (Gr) as a transparent conducting electrode (TCE) and n-type molybdenum disulfide (n-MoS₂) as an emitter layer. The photovoltaic performance of a graphene/n-MoS₂/a-Si:H/p-cSi/Au single facial HIT solar cell has been studied using AFORS-HET v2.5 simulation software. A maximum output efficiency of 25.61% has been achieved. The obtained results were compared with the results from a commercially available a-Si:H layer and p-cSi wafer after simulation. Moreover, the dependence of the cell performance on changes in the TCE and the back contact materials has also been studied. Finally, it has been demonstrated that the graphene layer and n-MoS₂ layer could act as a TCE and an efficient emitter layer, respectively, in a n-MoS₂/p-cSi based HIT solar cell.

Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors

Layered semiconductors, such as MoS2, have attracted interest as channel materials for post-silicon and beyond-CMOS electronics. Much attention has been devoted to the monolayer limit, but the monolayer channel is not necessarily advantageous in terms of the performance of field-effect transistors (FETs). Therefore, it is important to investigate the characteristics of FETs that have multilayer channels. Here, we report the staircase-like transfer characteristics of FETs with exfoliated multilayer MoS2 flakes. Atomic force microscope characterizations reveal that the presence of thinner terraces at the edges of the flakes accompanies the staircase-like characteristics. The anomalous staircase-like characteristics are ascribable to a difference in threshold-voltage shift by charge transfer from surface adsorbates between the channel center and the thinner terrace at the edge. This study reveals the importance of the uniformity of channel thickness.

Direct bilayer growth: a new growth principle for a novel WSe2 homo-junction and bilayer WSe2 growth

Homo-junction and multi-layer structures of transition metal chalcogenide (TMD) materials provide great flexibility for band-structure engineering and designing photoelectric devices. However, the knowledge of van der Waals epitaxy growth limits the development of these heterostructures. Herein, we employed the chemical vapor deposition (CVD) growth strategy to synthesize novel WSe₂ homo-junction samples with a triangular monolayer in the center and three AA stacking bilayer flakes connected to the vertexes of the monolayer. The emitted photon energy from the bilayer near the junction showed a blueshift in energy of up to 24 meV compared with bare bilayer WSe₂, confirming the charge transfer effect from monolayer to bilayer WSe₂. Further growth studies revealed the shape evolution from WSe₂ homo-junction to bilayer. The whole homo-junction formation and evolution process cannot be explained by the traditional layer-by-layer growth mechanism. Instead, a direct bilayer growth approach is proposed to explain the bilayer formation and evolution at the vertexes of the bottom layer of WSe₂. These findings suggest that the growth of bilayer TMDs is more complex than our previous understanding. This work presents deepens insight into van der Waals epitaxy growth, and thus is valuable for guiding the fabrication of novel homo-junctions for both fundamental science and optoelectronic applications.

Measuring Photoexcited Free Charge Carriers in Mono- to Few-Layer Transition-Metal Dichalcogenides with Steady-State Microwave Conductivity

Photoinduced generation of mobile charge carriers is the fundamental process underlying many applications, such as solar energy harvesting, solar fuel production, and efficient photodetectors. Monolayer transition-metal dichalcogenides (TMDCs) are an attractive model system for studying photoinduced carrier generation mechanisms in low-dimensional materials because they possess strong direct band gap absorption, large exciton binding energies, and are only a few atoms thick. While a number of studies have observed charge generation in neat TMDCs for photoexcitation at, above, or even below the optical band gap, the role of nonlinear processes (resulting from high photon fluences), defect states, excess charges, and layer interactions remains unclear. In this study, we introduce steady-state microwave conductivity (SSMC) spectroscopy for measuring charge generation action spectra in a model WS₂ mono- to few-layer TMDC system at fluences that coincide with the terrestrial solar flux. Despite utilizing photon fluences well below those used in previous pump-probe measurements, the SSMC technique is sensitive enough to easily resolve the photoconductivity spectrum arising in mono- to few-layer WS₂. By correlating SSMC with other spectroscopy and microscopy experiments, we find that photoconductivity is observed predominantly for excitation wavelengths resonant with the excitonic transition of the multilayer portions of the sample, the density of which can be controlled by the synthesis conditions. These results highlight the potential of layer engineering as a route toward achieving high yields of photoinduced charge carriers in neat TMDCs, with implications for a broad range of optoelectronic applications.

Probing Charge Carrier Transport and Recombination Pathways in Monolayer MoS2/WS2 Heterojunction Photoelectrodes

Monolayer heterojunctions such as MoS₂/WS₂ are attractive for solar energy conversion applications because the interfacial electric field spatially separates charge carriers in less than 100 fs. Photoelectrochemical cells represent an intriguing platform to collect the spatially separated carriers. However, the recombination, transport, and interfacial charge transfer processes that take place following the ultrafast charge separation step have not been investigated. Here we demonstrate novel charge recombination and transport pathways in monolayer MoS₂/WS₂ photoelectrochemical cells by spatially resolving the net collection of carriers (i.e., the photocurrent) at the single nanosheet level. We discovered an excitation-wavelength-dependent recombination pathway that depends on the heterojunction stacking configuration and the carrier generation profile in the heterostructure. Photocurrent mapping measurements revealed that charge transport occurs parallel to the layers over micrometer-scale distances even though the indium tin oxide electrode and liquid electrolyte provide efficient charge extraction pathways via intimate electron- and hole-selective contacts. Our results reveal how composition heterogeneity influences the performance of bulk heterojunction electrodes made from randomly oriented nanosheets and provide critical insight into the design of efficient heterojunction photoelectrodes for solar energy conversion applications.

SnSe/MoS2 van der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope

The minimization of the subthreshold swing (SS) in transistors is essential for low-voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal-oxide-semiconductor field-effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec^-1 at room temperature). However, another type of transistor, the junction field-effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS₂ van der Waals (vdW) heterostructure-based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS₂ vdW heterostructure exhibits excellent p-n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS₂ as the channel, the SnSe/MoS₂ vdW heterostructure exhibit well-behavioured n-channel JFET characteristics with a small pinch-off voltage V_P of -0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec^-1 and high ON/OFF ratio over 10⁶ , demonstrating excellent electronic performance especially in the subthreshold regime.

Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response

Two-dimensional lateral heterojunctions based on monolayer transition-metal dichalcogenides (TMDs) have received increasing attention given that their direct band gap makes them very attractive for optoelectronic applications. Although bilayer TMDs present an indirect band gap, their electrical properties are expected to be less susceptible to ambient conditions, with higher mobilities and density of states when compared to monolayers. Bilayers and few-layers single domain devices have already demonstrated higher performance in radio frequency and photosensing applications. Despite these advantages, lateral heterostructures based on bilayer domains have been less explored. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS₂-WS₂ and MoSe₂-WSe₂ monodomains. The heterojunctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layers. A phenomenological mechanism is proposed to explain the growth mode with self-limited thickness that happens within a certain window of growth conditions. With respect to their as-grown monolayer counterparts, bilayer lateral heterostructures yield nearly 1 order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ∼10³ times larger than those extracted from the as-grown monolayers, in addition to room-temperature electroluminescence. The improved performance of bilayer heterostructures significantly expands the potential of two-dimensional materials for optoelectronics.

Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects

Combining a pair of materials of different structural dimensions and functional properties into a hybrid material system may realize unprecedented multi-functional device applications. Especially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures due to their colossal area-to-volume ratio, excellent flexibility, and high sensitivity to interfacial and surface interactions. Semiconducting molybdenum disulfide (MoS₂), one of the well-studied layered materials, has a direct band gap as one molecular layer and hence, is expected to be one of the promising key materials for next-generation optoelectronics. Here, using lateral 2D/3D heterostructures composed of MoS₂ monolayers and nanoscale inorganic ferroelectric thin films, reversibly tunable photoluminescence has been demonstrated at the microscale to be over 200% upon ferroelectric polarization reversal by using nanoscale conductive atomic force microscopy tips. Also, significant ferroelectric-assisted modulation in electrical properties has been achieved from field-effect transistor devices based on the 2D/3D heterostructrues. Moreover, it was also shown that the MoS₂ monolayer can be an effective electric field barrier in spite of its sub-nanometer thickness. These results would be of close relevance to exploring novel applications in the fields of optoelectronics and sensor technology.

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

The recent reports of various photodetectors based on molybdenum disulfide (MoS₂) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS₂, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 10⁶ A/W at λ = 520 nm and 1.65 × 10⁴ A/W at λ = 1064 nm) superior to the previously reported MoS₂-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS₂ with high responsivities of 2.67 × 10⁶ A/W and 1.65 × 10⁴ A/W in the visible–infrared wavelength range and fast photoresponse.

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides

Phase-transition field-effect transistors (FETs) are a class of steep-slope devices that show abrupt on/off switching owing to the metal-insulator transition (MIT) induced in the contacting materials. An important avenue to develop phase-transition FETs is to understand the charge injection mechanism at the junction of the contacting MIT materials and semiconductor channels. Here, toward the realization of high-performance phase-transition FETs, we investigate the contact properties of heterojunctions between semiconducting transition-metal dichalcogenides (TMDCs) and vanadium dioxide (VO₂) that undergoes a MIT at a critical temperature (T_c) of approximately 340 K. We fabricated transistors based on molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂) in contact with the VO₂ source/drain electrodes. The VO₂-contacted MoS₂ transistor exhibited n-type transport both below and above T_c. Across the MIT, the on-current was observed to increase only by a factor of 5, in contrast to the order-of-magnitude change in the resistance of the VO₂ electrodes, suggesting the existence of high contact resistance. The Arrhenius analyses of the gate-dependent drain current confirmed the formation of the interfacial barrier at the VO₂/MoS₂ contacts, irrespective of the phase state of VO₂. The VO₂-contacted WSe₂ transistor showed ambipolar transport, indicating that the Fermi level lies near the mid gap of WSe₂. These observations provide insights into the contact properties of phase-transition FETs based on VO₂ and TMDCs and suggest the need for contact engineering for high-performance operations.

Layer-Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultraflat Metals

Layered materials based on transition-metal dichalcogenides (TMDs) are promising for a wide range of electronic and optoelectronic devices. Realizing such practical applications often requires metal-TMD connections or contacts. Hence, a complete understanding of electronic band alignments and potential barrier heights governing the transport through metal-TMD junctions is critical. However, it is presently unclear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few-layered (1 to 5 layers) MoS₂ immobilized on ultraflat conducting Au surfaces [root-mean-square (rms) surface roughness < 0.2 nm] and indium-tin oxide (ITO) substrates (rms surface roughness < 0.7 nm) forming a vertical metal (CAFM tip)-semiconductor-metal device. We have observed that the current increases with the number of layers up to five layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed how this barrier decreases as the number of layers increases. Using density functional theory calculations, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating TMDs on a transparent ultraflat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of the TMD-metal junction, which depends on the numbers of TMD layers and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction

The charge-transfer process in transition-metal dichalcogenides (TMDCs) lateral homojunction affects the electron-hole recombination process of in optoelectronic devices. However, the optical properties of the homojunction reflecting the charge-transfer process has not been observed and studied. In this work, we investigated the charge-transfer-induced emission properties based on monolayer (1L)-bilayer (2L) WSe₂ lateral homojunction with dozens of nanometer monolayer region. On the one hand, the photoluminescence (PL) emission of bilayer WSe₂ from the homojunction area blue shifts ∼23 and ∼31 meV for direct and indirect bandgap emission, respectively, compared with the bare WSe₂ bilayer region. The blue shift of the emission spectrum in the bilayer WSe₂ is ascribed to the decrease in binding energy induced by charge transfer from monolayer to bilayer. On the other hand, the energy shift shows a tendency to increase as the temperature decreases. The energy blue shift is ∼57 meV for direct bandgap emission at 80 K, which is larger than that (∼23 meV) at room temperature. The larger-energy blue shift at low temperature is derived from the larger driving force under larger band offset. Our observations of the unique optical properties induced by efficient charge transfer are very helpful for exploring novel TMDC-based optoelectronic devices.

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spin-orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX ₂ (with M  =  Mo, W and X  =  S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.

Electronic Coupling in Metallophthalocyanine-Transition Metal Dichalcogenide Mixed-Dimensional Heterojunctions

Mixed-dimensional heterojunctions, such as zero-dimensional (0D) organic molecules deposited on two-dimensional (2D) transition metal dichalcogenides (TMDCs), often exhibit interfacial effects that enhance the properties of the individual constituent layers. Here we report a systematic study of interfacial charge transfer in metallophthalocyanine (MPc) - MoS₂ heterojunctions using optical absorption and Raman spectroscopy to elucidate M core (M = first row transition metal), MoS₂ layer number, and excitation wavelength effects. Observed phenomena include the emergence of heterojunction-specific optical absorption transitions and strong Raman enhancement that depends on the M identity. In addition, the Raman enhancement is tunable by excitation laser wavelength and MoS₂ layer number, ultimately reaching a maximum enhancement factor of 30x relative to SiO₂ substrates. These experimental results, combined with density functional theory (DFT) calculations, indicate strong coupling between nonfrontier MPc orbitals and the MoS₂ band structure as well as charge transfer across the heterojunction interface that varies as a function of the MPc electronic structure.

Wafer-Scale Fabrication of Two-Dimensional PtS2/PtSe2 Heterojunctions for Efficient and Broad band Photodetection

The fabrication of van der Waals heterostructures mainly extends to two-dimensional (2D) materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS₂/PtSe₂ heterojunctions covering a large area on the SiO₂/Si substrate with a maximum size of 2″ in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS₂/PtSe₂ heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405-2200 nm). The PtS₂/PtSe₂ heterojunctions exhibit broad band photoresponse and high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies being 1.2% at 1064 nm, 0.2% at 1550 nm, and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broad band 2D heterojunction photodetector demonstrated in this work further corroborates the great potential of 2D materials in the future low-energy optoelectronics.

Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides

Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.

Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene-GaSe heterojunction-based field-effect transistors with broadband photodetection from 730-1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene-semiconductor heterojunction where possible Fermi level pinning effect is considered.

Degradation of Two-Dimensional CH3NH3PbI3 Perovskite and CH3NH3PbI3/Graphene Heterostructure

Hybrid organic-inorganic metal halide perovskites have been considered as promising materials for boosting the performance of photovoltaics and optoelectronics. Reduced-dimensional condiments and tunable properties render two-dimensional (2D) perovskite as novel building blocks for constructing micro-/nanoscale devices in high-performance optoelectronic applications. However, the stability is still one major obstacle for long-term practical use. Herein, we provide microscale insights into the degradation kinetics of 2D CH₃NH₃PbI₃ (MAPbI₃) perovskite and CH₃NH₃PbI₃/graphene heterostructures. It is found that the degradation is mainly caused by cation evaporation, which consequently affects the microstructure, light-matter interaction, and the photoluminescence quantum yield efficiency of the 2D perovskite. Interestingly, the encapsulation of perovskite by monolayer graphene can largely preserve the structure of the perovskite nanosheet and maintain reasonable optical properties upon exposure to high temperature and humidity. The heterostructure consisting of perovskite and another 2D impermeable material affords new possibilities to construct high-performance and stable perovskite-based optoelectronic devices.

Probing Exciton Complexes and Charge Distribution in Inkslab-Like WSe2 Homojunction

By virtue of the layer-dependent band structure and valley-selected optical/electronic properties, atomically layered transition-metal dichalcogenides (TMDs) exhibit great potentials such as in valleytronics and quantum devices, and have captured significant attentions. Precise control of the optical and electrical properties of TMDs is always the pursuing goal for real applications, and constructing advanced structures that allow playing with more degrees of freedom may hold the key. Here, we introduce a triangular inkslab-like WSe₂ homojunction with a monolayer in the inner surrounded by a multilayer frame. Benefit from this interesting structure, the photoluminescence (PL) peaks redshift up to 50 meV and the charge density increases about 6 times from the center to the edge region of the inner monolayer. We demonstrated that the Se-deficient multilayer frame offers the excessive free electrons for the generation of the electron density gradient inside the monolayer, which also results in the spatial variation and distribution gradient of a series of exciton complexes. Furthermore, we observed the strong rectifying characteristic and clear photovoltaic response across the homojunction through measuring and mapping the photocurrent of the devices. Our result provides another route for efficient modulation of the exciton-complex emissions of TMDs, which is exceptionally desirable for the "layer- and charge-engineered" photonic and optoelectronic devices.

Atomically thin p-n junctions based on two-dimensional materials

Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form nonplanar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Toward that end, we investigated the photoresponse of Si nanowire/MoS₂ heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS₂ isotype heterojunctions with p-Si/MoS₂ heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument-limited response time of 1 μs, which is 10 times faster than the previously reported response times for planar Si/MoS₂ devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Understanding the electronic transport of monolayer transition metal dichalcogenides (TMDs) and their heterostructures is complicated by the difficulty in achieving electrical contacts that do not perturb the material. Typically, metal deposition on monolayer TMDs leads to hybridization between the TMD and the metal, which produces Schottky barriers at the metal/semiconductor interface. In this work, we apply the recently reported hexagonal boron nitride (h-BN) tunnel contact scheme to probe the junction characteristics of a lateral TMD heterostructure grown via chemical vapor deposition. We first measure the electronic properties across the junction before elucidating optoelectronic generation mechanisms via scanning photocurrent microscopy. We find that the rectification ratio measured using the encapsulated, tunnel contact scheme is almost 2 orders of magnitude smaller than that observed via conventional metal contact geometry, which implies that the metal/semiconductor Schottky barriers play large roles in this aspect. Furthermore, we find that both the photovoltaic as well as hot carrier generation effects are dominant mechanisms driving photoresponse, depending on the external biasing conditions. This work is the first time that this encapsulation scheme has been applied to lateral heterostructures and serves as a reference for future electronic measurements on this material. It also simultaneously serves as a framework to more accurately assess the electronic transport characteristics of 2D heterostructures and better inform future device architectures.

Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects

Transition metal dichalcogenide (TMD) heterostructures have been widely explored due to the formation of type-II band alignment and interlayer exciton. However, the studies of type-I TMD heterostructures are still lacking, which limit their applications in luminescence devices. Here, the 1L/nL MX₂ (n = 2, 3, 4; M = Mo, W; X = S, Se) lateral homojunction based on the layer-dependent band gaps of TMD nanosheets is theoretically simulated. The studies show that the TMD homojunction presents with high thermal stability and type-I band alignment. The band offset and quantum confinement of carriers can be easily tuned by controlling the thickness of the multilayer region. Moreover, the electric field can decrease the band gaps of 1L/3L and 1L/4L homojunctions linearly. Interestingly, for the 1L/2L MX₂ homojunction, the gap value is robust to the weak electric field, while it drops sharply under a strong electric field. This study sheds light on the physical pictures in the TMD lateral homojunction, and provides a practicable and general approach to engineer a type-I homojunction based 2D semiconductor materials.

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS₂ single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS₂ samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS₂, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Self-Aligned van der Waals Heterojunction Diodes and Transistors

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS₂ with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS₂ homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS₂ films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

This review provides a systematic overview of the integration, surface, and interfacial engineering of 2D/3D and 2D/2D homo/heterojunctions for PV and PEC applications.

Photoelectric response properties under UV/red light irradiation of ZnO nanorod arrays coated with vertically aligned MoS2 nanosheets

MoS₂ with layered structure and distinct physical properties has attracted attention for electronic or optoelectronic devices. The photoelectric response properties of MoS₂/ZnO heterojunctions based devices fabricated by spin-coating MoS₂ nanosheets solutions on ZnO nanorod arrays (NRs) were investigated. The results revealed that MoS₂ nanosheets were vertically aligned on the surface of ZnO NRs and the devices exhibit good photoresponse stability and reproducibility under UV and red light illuminations. The vertically aligned MoS₂ nanosheets facilitate the fast photogenerated carrier separation and transport. The devices with few-layered MoS₂ nanosheets show a high responsivity and detectivity under UV and red light illuminations, which can be attributed to small contact resistance between MoS₂ nanosheets and ZnO NRs. These results provide important insights in the facile fabrication strategy and understanding electronic and optoelectronic devices based on the heterostructures with vertically aligned MoS₂.

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

Dynamic Electronic Junctions in Organic-Inorganic Hybrid Perovskites

Organic-inorganic hybrid perovskites have shown great potential as building blocks for low-cost optoelectronics for their exceptional optical and electrical properties. Despite the remarkable progress in device demonstration, fundamental understanding of the physical processes in halide perovskites remains limited, especially the unusual electronic behaviors such as the current-voltage hysteresis and the switchable photovoltaic effect. These phenomena are of particular interests for being closely related to device functionalities and performance. In this work, a microscopic picture of electric fields in halide perovskite thin films was obtained using scanning laser microscopy. Unlike conventional semiconductors, distribution of the built-in electric fields in the halide perovskite evolves dynamically under the stimulation of external biases. The observations can be well explained using a model based on field-assisted ion migration, indicating that the mechanism responsible for the evolving charge transport observed in this material is not purely electronic. The anomalous dynamic responses to the applied bias are found to be effectively suppressed by operating the devices at reduced temperature or processing the materials at elevated temperature, which provide potential strategies for designing and creating halide perovskites with more stable charge transport properties in the development of viable perovskite-based optoelectronics.

High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures

We report experimental measurements for ultrathin (<15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50% and show that these structures can achieve experimental absorbance >90%. By coupling electromagnetic simulations and experimental measurements, we show that pn WSe₂/MoS₂ heterojunctions with vertical carrier collection can have internal photocarrier collection efficiencies exceeding 70%.