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Kerwin B, Liu SE, Sadhukhan T, Dasgupta A, Jones LO, López-Arteaga R, Zeng TT, Facchetti A, Schatz GC, Hersam MC, Marks TJ. Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p-Type Doping Method. Angew Chem Int Ed Engl 2024; 63:e202403494. [PMID: 38551580 DOI: 10.1002/anie.202403494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Indexed: 04/24/2024]
Abstract
Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here we report the electrophilic trifluoromethylation of 2D WSe2 and MoS2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe2. This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.
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Affiliation(s)
- Brendan Kerwin
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Stephanie E Liu
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Tumpa Sadhukhan
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Anushka Dasgupta
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Leighton O Jones
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Rafael López-Arteaga
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Thomas T Zeng
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, United States
| | - George C Schatz
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Mark C Hersam
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
- Department of Electrical and Computer Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
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2
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Kuş E, Altındemir G, Bostan YK, Taşaltın C, Erol A, Wang Y, Sarcan F. A Dual-Channel MoS 2-Based Selective Gas Sensor for Volatile Organic Compounds. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:633. [PMID: 38607167 PMCID: PMC11013178 DOI: 10.3390/nano14070633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 03/28/2024] [Accepted: 04/02/2024] [Indexed: 04/13/2024]
Abstract
Significant progress has been made in two-dimensional material-based sensing devices over the past decade. Organic vapor sensors, particularly those using graphene and transition metal dichalcogenides as key components, have demonstrated excellent sensitivity. These sensors are highly active because all the atoms in the ultra-thin layers are exposed to volatile compounds. However, their selectivity needs improvement. We propose a novel gas-sensing device that addresses this challenge. It consists of two side-by-side sensors fabricated from the same active material, few-layer molybdenum disulfide (MoS₂), for detecting volatile organic compounds like alcohol, acetone, and toluene. To create a dual-channel sensor, we introduce a simple step into the conventional 2D material sensor fabrication process. This step involves treating one-half of the few-layer MoS₂ using ultraviolet-ozone (UV-O3) treatment. The responses of pristine few-layer MoS₂ sensors to 3000 ppm of ethanol, acetone, and toluene gases are 18%, 3.5%, and 49%, respectively. The UV-O3-treated few-layer MoS₂-based sensors show responses of 13.4%, 3.1%, and 6.7%, respectively. This dual-channel sensing device demonstrates a 7-fold improvement in selectivity for toluene gas against ethanol and acetone. Our work sheds light on understanding surface processes and interaction mechanisms at the interface between transition metal dichalcogenides and volatile organic compounds, leading to enhanced sensitivity and selectivity.
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Affiliation(s)
- Esra Kuş
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
| | - Gülay Altındemir
- Materials Institute, TUBITAK Marmara Research Center, Gebze, Kocaeli 41470, Turkey; (G.A.); (C.T.)
| | - Yusuf Kerem Bostan
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
| | - Cihat Taşaltın
- Materials Institute, TUBITAK Marmara Research Center, Gebze, Kocaeli 41470, Turkey; (G.A.); (C.T.)
| | - Ayse Erol
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
| | - Yue Wang
- Department of Physics, School of Physics, Engineering and Technology, University of York, York YO10 5DD, UK
| | - Fahrettin Sarcan
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey; (E.K.); (Y.K.B.); (A.E.)
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3
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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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4
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Boulet I, Pascal S, Bedu F, Ozerov I, Ranguis A, Leoni T, Becker C, Masson L, Matkovic A, Teichert C, Siri O, Attaccalite C, Huntzinger JR, Paillet M, Zahab A, Parret R. Electrical monitoring of organic crystal phase transition using MoS 2 field effect transistor. NANOSCALE ADVANCES 2023; 5:1681-1690. [PMID: 36926560 PMCID: PMC10012849 DOI: 10.1039/d2na00817c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Accepted: 02/11/2023] [Indexed: 06/18/2023]
Abstract
Hybrid van der Waals heterostructures made of 2D materials and organic molecules exploit the high sensitivity of 2D materials to all interfacial modifications and the inherent versatility of the organic compounds. In this study, we are interested in the quinoidal zwitterion/MoS2 hybrid system in which organic crystals are grown by epitaxy on the MoS2 surface and reorganize in another polymorph after thermal annealing. By means of field-effect transistor measurements recorded in situ all along the process, atomic force microscopy and density functional theory calculations we demonstrate that the charge transfer between quinoidal zwitterions and MoS2 strongly depends on the conformation of the molecular film. Remarkably, both the field effect mobility and the current modulation depth of the transistors remain unchanged which opens up promising prospects for efficient devices based on this hybrid system. We also show that MoS2 transistors enable fast and accurate detection of structural modifications that occur during phases transitions of the organic layer. This work highlights that MoS2 transistors are remarkable tools for on-chip detection of molecular events occurring at the nanoscale, which paves the way for the investigation of other dynamical systems.
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Affiliation(s)
- Ilan Boulet
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Simon Pascal
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Frederic Bedu
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Igor Ozerov
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Alain Ranguis
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Thomas Leoni
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Conrad Becker
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Laurence Masson
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | | | | | - Olivier Siri
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Claudio Attaccalite
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
| | - Jean-Roch Huntzinger
- Laboratoire Charles Coulomb, UMR 221, Univ. Montpellier, CNRS Montpellier France
| | - Matthieu Paillet
- Laboratoire Charles Coulomb, UMR 221, Univ. Montpellier, CNRS Montpellier France
| | - Ahmed Zahab
- Laboratoire Charles Coulomb, UMR 221, Univ. Montpellier, CNRS Montpellier France
| | - Romain Parret
- Aix Marseille Université, CNRS, CINAM, UMR 7325 Campus de Luminy 13288 Marseille France romain.parret@.univ-amu.fr +33 6 62922867
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5
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Zou T, Kim HJ, Kim S, Liu A, Choi MY, Jung H, Zhu H, You I, Reo Y, Lee WJ, Kim YS, Kim CJ, Noh YY. High-Performance Solution-Processed 2D P-Type WSe 2 Transistors and Circuits through Molecular Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208934. [PMID: 36418776 DOI: 10.1002/adma.202208934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 11/05/2022] [Indexed: 06/16/2023]
Abstract
Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br2 is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br2 -doped WSe2 transistors show a field-effect hole mobility of more than 27 cm2 V-1 s-1 , and a high on/off current ratio of ≈107 , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe2 and n-type MoS2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (VDD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.
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Affiliation(s)
- Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Hyun-Jun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Soonhyo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Ao Liu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Haksoon Jung
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Huihui Zhu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Insang You
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Woo-Ju Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Sung Kim
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
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6
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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7
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Dillenburger JD, Nguyen MAT, Xu P, Shallenberger JR, Mallouk TE. Basal Plane Functionalization of Niobium Disulfide Nanosheets with Cyclopentadienyl Manganese(I) Dicarbonyl. Inorg Chem 2022; 61:14824-14832. [PMID: 36074721 DOI: 10.1021/acs.inorgchem.2c02366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Basal plane-functionalized NbS2 nanosheets were obtained using in situ photolysis to generate the coordinatively unsaturated organometallic fragment cyclopentadienyl manganese(I) dicarbonyl (CpMn(CO)2). Under UV irradiation, a labile carbonyl ligand dissociates from the tricarbonyl complex, creating an open coordination site for bonding between the Mn atom and the electron-rich sulfur atoms on the surface of the NbS2 nanosheets. In contrast, no reaction is observed with 2H-MoS2 nanosheets under the same reaction conditions. This difference in reactivity is consistent with the electronic structure calculations, which indicate stronger bonding of the organometallic fragment to electron-poor, metallic NbS2 than to semiconducting, electron-rich MoS2. X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared (FTIR) spectroscopy, and powder X-ray diffraction (PXRD) were used to characterize the bonding between Mn and S atoms on the surface-functionalized nanosheets.
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Affiliation(s)
- Jarrett D Dillenburger
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Minh An T Nguyen
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Pengtao Xu
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jeffrey R Shallenberger
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas E Mallouk
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.,Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.,International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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8
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Vu VT, Phan TL, Vu TTH, Park MH, Do VD, Bui VQ, Kim K, Lee YH, Yu WJ. Synthesis of a Selectively Nb-Doped WS 2-MoS 2 Lateral Heterostructure for a High-Detectivity PN Photodiode. ACS NANO 2022; 16:12073-12082. [PMID: 35913119 DOI: 10.1021/acsnano.2c02242] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed. The different chemical activity reactivity (MoO3 > WO3 > Nb2O5) enable the separation of the growth temperature of intrinsic MoS2 to 700 °C (first grown inner layer) and Nb-doped WS2 to 800 °C (second grown outer layer). By controlling the Nb/(W+Nb) molar ratio in the solution precursor, the hole carrier density in the p-type WS2 layer is selectively controlled from approximately 1.87 × 107/cm2 at 1.5 at.% Nb to approximately 1.16 × 1013/cm2 at 8.1 at.% Nb, while the electron carrier density in n-type MoS2 shows negligible change with variation of the Nb molar ratio. As a result, the electrical behavior of the WS2-MoS2 heterostructure transforms from the N-N junction (0 at.% Nb) to the P-N junction (4.5 at.% Nb) and the P-N tunnel junction (8.1 at.% Nb). The band-to-band tunneling at the P-N tunnel junction (8.1 at.% Nb) is eliminated by applying negative gate bias, resulting in a maximum rectification ratio (105) and a minimum channel resistance (108 Ω). With this optimized photodiode (8.1 at.% Nb at Vg = -30 V), an Iphoto/Idark ratio of 6000 and a detectivity of 1.1 × 1014 Jones are achieved, which are approximately 20 and 3 times higher, respectively, than the previously reported highest values for CVD-grown transition-metal dichalcogenide P-N junctions.
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Affiliation(s)
- Van Tu Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Thanh Huong Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Mi Hyang Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Van Dam Do
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Viet Quoc Bui
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kunnyun Kim
- Korea Electronics Technology Institute, Seongnam, 13509, Republic of Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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9
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Ko BM, Khan MF, Dastgeer G, Han GN, Khan MA, Eom J. Reconfigurable carrier type and photodetection of MoTe 2 of various thicknesses by deep ultraviolet light illumination. NANOSCALE ADVANCES 2022; 4:2744-2751. [PMID: 36132280 PMCID: PMC9417606 DOI: 10.1039/d1na00881a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Accepted: 05/09/2022] [Indexed: 06/15/2023]
Abstract
Tuning of the Fermi level in transition metal dichalcogenides (TMDCs) leads to devices with excellent electrical and optical properties. In this study, we controlled the Fermi level of MoTe2 by deep ultraviolet (DUV) light illumination in different gaseous environments. Specifically, we investigated the reconfigurable carrier type of an intrinsic p-MoTe2 flake that gradually transformed into n-MoTe2 after illumination with DUV light for 30, 60, 90, 120, 160, 250, 500, 900, and 1200 s in a nitrogen (N2) gas environment. Subsequently, we illuminated this n-MoTe2 sample with DUV light in oxygen (O2) gas and reversed its carrier polarity toward p-MoTe2. However, using this doping scheme to reveal the effect of DUV light on various layers (3-30 nm) of MoTe2 is challenging. The DUV + N2 treatment significantly altered the polarity of MoTe2 of different thicknesses from p-type to n-type under the DUV + N2 treatment, but the DUV + O2 treatment did not completely alter the polarity of thicker n-MoTe2 flakes to p-type. In addition, we investigated the photoresponse of MoTe2 after DUV light treatment in N2 and O2 gas environments. From the time-resolved photoresponsivity at different polarity states of MoTe2, we have shown that the response time of the DUV + O2 treated p-MoTe2 is faster than that of the pristine and doped n-MoTe2 films. These carrier polarity modulations and photoresponse paves the way for wider applications of MoTe2 in optoelectronic devices.
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Affiliation(s)
- Byung Min Ko
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University Seoul 05006 Korea
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University 209 Neungdong-ro, Gwangjin-gu Seoul 05006 Korea
| | - Ghulam Dastgeer
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University Seoul 05006 Korea
| | - Gyu Nam Han
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University Seoul 05006 Korea
| | - Muhammad Asghar Khan
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University Seoul 05006 Korea
| | - Jonghwa Eom
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University Seoul 05006 Korea
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10
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Youn S, Kim J, Moon H, Kim JK, Jang J, Chang J, Lee T, Kang K, Lee W. Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200818. [PMID: 35485322 DOI: 10.1002/smll.202200818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/21/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figure of merit, suitable doping methods to improve and optimize the thermoelectric power factor of TMDCs have not been studied extensively. In this respect, molecular charge-transfer doping is utilized effectively in TMDC-based nanoelectronic devices due to its facile and controllable nature owing to a diverse range of molecular designs available for modulating the degree of charge transfer. In this study, the power of molecular charge-transfer doping is demonstrated in controlling the carrier-type (n- and p-type) and thermoelectric power factor in platinum diselenide (PtSe2 ) nanosheets. This, combined with the tunability in the band overlap by changing the thickness of the nanosheets, allows a significant increase in the thermoelectric power factor of the n- and p-doped PtSe2 nanosheets to values as high as 160 and 250 µW mK-2 , respectively. The methodology employed in this study provides a simple and effective route for the molecular doping of TMDCs that can be used for the design and development of highly efficient thermoelectric energy conversion systems.
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Affiliation(s)
- Seonhye Youn
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Jeongmin Kim
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988, Republic of Korea
| | - Hongjae Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Jae-Keun Kim
- Max-Planck Institute of Microstructure Physics, Weinberg 2, Saale, 06120, Halle, Germany
| | - Juntae Jang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Joonyeon Chang
- Natural Products Institute, Korea Institute of Science and Technology (KIST), 679 Saimdang-ro, Gangneung, Gangwon-do, 25451, Republic of Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Keehoon Kang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Wooyoung Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
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11
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Huang W, Zhang Y, Song M, Wang B, Hou H, Hu X, Chen X, Zhai T. Encapsulation strategies on 2D materials for field effect transistors and photodetectors. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.08.086] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
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12
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Jeong I, Cho K, Yun S, Shin J, Kim J, Kim GT, Lee T, Chung S. Tailoring the Electrical Characteristics of MoS 2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing. ACS NANO 2022; 16:6215-6223. [PMID: 35377600 DOI: 10.1021/acsnano.2c00021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Surface charge transfer doping (SCTD) has been regarded as an effective approach to tailor the electrical characteristics of atomically thin transition metal dichalcogenides (TMDs) in a nondestructive manner due to their two-dimensional nature. However, the difficulty of achieving rationally controlled SCTD on TMDs via conventional doping methods, such as solution immersion and dopant vaporization, has impeded the realization of practical optoelectronic and electronic devices. Here, we demonstrate controllable SCTD of molybdenum disulfide (MoS2) field-effect transistors using inkjet-printed benzyl viologen (BV) as an n-type dopant. By adjusting the BV concentration and the areal coverage of inkjet-printed BV dopants, controllable SCTD results in BV-doped MoS2 FETs with elaborately tailored electrical performance. Specifically, the suggested solvent system creates well-defined droplets of BV ink having a volume of ∼2 pL, which allows the high spatial selectivity of SCTD onto the MoS2 channels by depositing the BV dopant on demand. Our inkjet-printed SCTD method provides a feasible solution for achieving controllable doping to modulate the electrical and optical performances of TMD-based devices.
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Affiliation(s)
- Inho Jeong
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Kyungjune Cho
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Seobin Yun
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Jiwon Shin
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Jaeyoung Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Gyu Tae Kim
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
| | - Takhee Lee
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
- KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul 02447, Korea
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13
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Ma J, Chen X, Wang X, Bian J, Tong L, Chen H, Guo X, Xia Y, Zhang X, Xu Z, He C, Qu J, Zhou P, Wu C, Wu X, Bao W. Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11610-11618. [PMID: 35212228 DOI: 10.1021/acsami.1c22990] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In recent years, two-dimensional (2D) semiconductors have attracted considerable attention from both academic and industrial communities. Recent research has begun transforming from constructing basic field-effect transistors (FETs) into designing functional circuits. However, device processing remains a bottleneck in circuit-level integration. In this work, a non-destructive doping strategy is proposed to modulate precisely the threshold voltage (VTH) of MoS2-FETs in a wafer scale. By inserting an Al interlayer with a varied thickness between the high-k dielectric and the Au top gate (TG), the doping could be controlled. The full oxidation of the Al interlayer generates a surplus of oxygen vacancy (Vo) in the high-k dielectric layer, which further leads to stable electron doping. The proposed strategy is then used to optimize an inverter circuit by matching the electrical properties of the load and driver transistors. Furthermore, the doping strategy is used to fabricate digital logic blocks with desired logic functions, which indicates its potential to fabricate fully integrated multistage logic circuits based on wafer-scale 2D semiconductors.
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Affiliation(s)
- Jingyi Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Jihong Bian
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Ling Tong
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Honglei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xiaojiao Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Yin Xia
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinzhi Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zihan Xu
- Shenzhen 6 Carbon Technology, Shenzhen 518106, China
| | - Congrong He
- School of Electronic Information, Soochow University, Suzhou 215006, China
| | - Jialing Qu
- School of Electronic Information, Soochow University, Suzhou 215006, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Chenjian Wu
- School of Electronic Information, Soochow University, Suzhou 215006, China
| | - Xing Wu
- In Situ Devices Center, Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai 200241, China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
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14
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Cho Y, Lee S, Cho H, Kang D, Yi Y, Kim K, Park JH, Im S. Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO 3 and LiF. SMALL METHODS 2022; 6:e2101073. [PMID: 35037415 DOI: 10.1002/smtd.202101073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 12/10/2021] [Indexed: 06/14/2023]
Abstract
To dope 2D semiconductor channels, charge-transfer doping has generally been done by thermal deposition of inorganic or organic thin-film layers on top of the 2D channel in bottom-gate field-effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge-transfer doping process is suggested. A damage-free charge-transfer doping is conducted for 2D MoTe2 (or MoS2 ) channels using a polydimethylsiloxane stamp. MoO3 or LiF is initially deposited on the stamp as a doping medium. Hysteresis-minimized transfer characteristics are achieved from stamp-doped FETs, while other devices with direct thermal deposition-doped channels show large hysteresis. The stamping method seems to induce a van der Waals-like damage-free interface between the channel and doping media. The stamp-induced doping is also well applied for a MoTe2 -based complementary inverter because MoO3 - and LiF-doping by separate stamps effectively modifies two ambipolar MoTe2 channels to p- and n-type, respectively.
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Affiliation(s)
- Yongjae Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Sol Lee
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Hyunmin Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Donghee Kang
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Kwanpyo Kim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Ji Hoon Park
- Department of Electronics and Electrical Engineering, Dankook University, Yongin, 16890, South Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
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15
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Ippolito S, Samorì P. Defect Engineering Strategies Toward Controlled Functionalization of Solution‐Processed Transition Metal Dichalcogenides. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100122] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022] Open
Affiliation(s)
- Stefano Ippolito
- CNRS ISIS UMR 7006 University of Strasbourg 8 Allée Gaspard Monge 67000 Strasbourg France
| | - Paolo Samorì
- CNRS ISIS UMR 7006 University of Strasbourg 8 Allée Gaspard Monge 67000 Strasbourg France
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16
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Kim J, Jung M, Lim DU, Rhee D, Jung SH, Cho HK, Kim HK, Cho JH, Kang J. Area-Selective Chemical Doping on Solution-Processed MoS 2 Thin-Film for Multi-Valued Logic Gates. NANO LETTERS 2022; 22:570-577. [PMID: 34779637 DOI: 10.1021/acs.nanolett.1c02947] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Han-Ki Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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17
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Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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18
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Kim JK, Cho K, Jang J, Baek KY, Kim J, Seo J, Song M, Shin J, Kim J, Parkin SSP, Lee JH, Kang K, Lee T. Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101598. [PMID: 34533851 DOI: 10.1002/adma.202101598] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2021] [Revised: 08/15/2021] [Indexed: 06/13/2023]
Abstract
The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe2 ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4 -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF3 )3 ). The temperature-dependent transport measurements show that the dopant counterions on WSe2 surface can induce Coulomb scattering in WSe2 channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe2 and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices.
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Affiliation(s)
- Jae-Keun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Kyungjune Cho
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Juntae Jang
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Kyeong-Yoon Baek
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jehyun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Junseok Seo
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Minwoo Song
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jiwon Shin
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jaeyoung Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Stuart S P Parkin
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Jung-Hoon Lee
- Computational Science Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Keehoon Kang
- Department of Materials Science & Engineering, Yonsei University, Seoul, 03722, Korea
| | - Takhee Lee
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
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19
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Seo SG, Ryu JH, Kim SY, Jeong J, Jin SH. Enhancement of Photodetective Properties on Multilayered MoS 2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1586. [PMID: 34204218 PMCID: PMC8234691 DOI: 10.3390/nano11061586] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 06/07/2021] [Accepted: 06/10/2021] [Indexed: 01/04/2023]
Abstract
Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.
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Affiliation(s)
| | | | | | | | - Sung Hun Jin
- Department of Electronic Engineering, Incheon National University, Incheon 22012, Korea; (S.G.S.); (J.H.R.); (S.Y.K.); (J.J.)
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20
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Jiang B, Che Y, Chen Y, Zhao Y, Wang C, Li W, Zheng H, Huang X, Samorì P, Zhang L. Wafer-Scale and Full-Coverage Two-Dimensional Molecular Monolayers Strained by Solvent Surface Tension Balance. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26218-26226. [PMID: 34015927 DOI: 10.1021/acsami.1c04198] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Inspired by the outstanding properties discovered in two-dimensional materials, the bottom-up generation of molecular monolayers is becoming again extremely popular as a route to develop novel functional materials and devices with tailored characteristics and minimal materials consumption. However, achieving a full-coverage over a large-area still represents a grand challenge. Here we report a molecular self-assembly protocol at the water surface in which the monolayers are strained by a novel solvent surface tension balance (SSTB) instead of a physical film balance as in the conventional Langmuir-Blodgett (LB) method. The obtained molecular monolayers can be transferred onto any arbitrary substrate including rigid inorganic oxides and metals, as well as flexible polymeric dielectrics. As a proof-of-concept, their application as ideal modification layers of a dielectric support for high-performance organic field-effect transistors (OFETs) has been demonstrated. The field-effect mobilities of both p- and n-type semiconductors displayed dramatic improvements of 1-3 orders of magnitude on SSTB-derived molecular monolayer, reaching values as high as 6.16 cm2 V-1 s-1 and 0.68 cm2 V-1 s-1 for pentacene and PTCDI-C8, respectively. This methodology for the fabrication of wafer-scale and defect-free molecular monolayers holds potential toward the emergence of a new generation of high-performance electronics based on two-dimensional materials.
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Affiliation(s)
- Baichuan Jiang
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Yu Che
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Yurong Chen
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Yingxuan Zhao
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Can Wang
- CNRS, ISIS UMR 7006, University of Strasbourg, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Wenbin Li
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Hongxian Zheng
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Xinxin Huang
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Paolo Samorì
- CNRS, ISIS UMR 7006, University of Strasbourg, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Lei Zhang
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
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21
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Zeng J, Liu G, Han Y, Luo W, Wu M, Xu B, Ouyang C. Effects of Strain and Electric Field on Molecular Doping in MoSSe. ACS OMEGA 2021; 6:14639-14647. [PMID: 34124487 PMCID: PMC8190909 DOI: 10.1021/acsomega.1c01747] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/17/2021] [Indexed: 06/12/2023]
Abstract
Recently, synthesized Janus MoSSe monolayers have attracted tremendous attention in science and technology due to their novel properties and promising applications. In this work, we investigate their molecular adsorption-induced structural and electronic properties and tunable doping effects under biaxial strain and external electric field by first-principles calculations. We find an effective n-type or p-type doping in the MoSSe monolayer caused by noncovalent tetrathiafulvalene (TTF) or tetracyanoquinodimethane (TCNQ) molecular adsorption. Moreover, the concentration of doping carrier with respect to the S or Se side also exhibits Janus characteristics because of the electronegativity difference between S and Se atoms and the intrinsic dipole moment in the MoSSe monolayer. In particular, this n-type or p-type molecular doping effect can be flexibly tuned by biaxial strain or under external electric field. By analyzing the valence band maximum (VBM) and conduction band minimum (CBM) in the band structure of MoSSe/TTF under strain, the strain-tunable band gap of MoSSe and the n-type molecular doping effect is revealed. Further explanation of charge transfer between TTF or TCNQ and the MoSSe monolayer by an equivalent capacitor model shows that the superimposition of external electric field and molecular adsorption-induced internal electric field plays a crucial role in achieving a controllable doping concentration in the MoSSe monolayer.
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22
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Kim S, Yoo H. Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers. MICROMACHINES 2021; 12:mi12050565. [PMID: 34067620 PMCID: PMC8155888 DOI: 10.3390/mi12050565] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 05/11/2021] [Accepted: 05/14/2021] [Indexed: 11/19/2022]
Abstract
Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recently been applied in other electronic applications, including as remote doping materials and molecular linkers to anchor target biomarkers. This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs.
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Remote Doping Effects of Indium-Gallium-Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers. MICROMACHINES 2021; 12:mi12050481. [PMID: 33922430 PMCID: PMC8145249 DOI: 10.3390/mi12050481] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Revised: 04/13/2021] [Accepted: 04/22/2021] [Indexed: 11/16/2022]
Abstract
Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide semiconductors in electronic products, an effective doping method that can control the electrical characteristics of oxide TFTs is required. Here, we comprehensively investigate the effect of silane-based self-assembled monolayer (SAM) doping on IGZO TFTs. Instead of a complex doping process, the electrical performance can be enhanced by anchoring silane-based SAMs on the IGZO surface. Furthermore, differences in the doping effect based on the structure of SAMs were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in IGZO TFTs.
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24
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Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors. Polymers (Basel) 2021; 13:polym13071087. [PMID: 33808061 PMCID: PMC8037493 DOI: 10.3390/polym13071087] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Revised: 03/21/2021] [Accepted: 03/26/2021] [Indexed: 11/29/2022] Open
Abstract
In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe2). The hole current of the Cytop–WSe2 field-effect transistor (FET) was boosted by the C–F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of the observed p-doping effects using atomic force microscopy (AFM) and Raman spectroscopy shed light on the doping mechanism. Moreover, Cytop reduces the electrical instability by preventing the adsorption of ambient molecules on the WSe2 surface. Annealing Cytop deposited on WSe2 eliminated the possible impurities associated with adsorbates (i.e., moisture and oxygen) that act as traps on the surface of WSe2. After thermal annealing, the Cytop–WSe2 FET afforded higher p-type conductivity and reduced hysteresis. The combination of the Cytop–WSe2 FET with annealing provides a promising method for obtaining high-performance WSe2 p-type transistors.
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25
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Yoo H, Heo K, Ansari MHR, Cho S. Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:832. [PMID: 33805062 PMCID: PMC8064109 DOI: 10.3390/nano11040832] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Revised: 03/19/2021] [Accepted: 03/22/2021] [Indexed: 12/22/2022]
Abstract
Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.
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Affiliation(s)
- Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
| | - Keun Heo
- Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, Korea;
| | - Md. Hasan Raza Ansari
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
| | - Seongjae Cho
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
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26
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Calavalle F, Dreher P, Surdendran AP, Wan W, Timpel M, Verucchi R, Rogero C, Bauch T, Lombardi F, Casanova F, Nardi MV, Ugeda MM, Hueso LE, Gobbi M. Tailoring Superconductivity in Large-Area Single -Layer NbSe 2 via Self-Assembled Molecular Adlayers. NANO LETTERS 2021; 21:136-143. [PMID: 33274947 DOI: 10.1021/acs.nanolett.0c03386] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical temperature (TC) of large-area NbSe2 monolayers is manipulated, employing ultrathin molecular adlayers. Spectroscopic evidence indicates that aligned molecular dipoles within the self-assembled layers act as a fixed gate terminal, collectively generating a macroscopic electrostatic field on NbSe2. This results in an ∼55% increase and a 70% decrease in TC depending on the electric field polarity, which is controlled via molecular selection. The reported functionalization, which improves the air stability of NbSe2, is efficient, practical, up-scalable, and suited to functionalize large-area TMDs. Our results indicate the potential of hybrid 2D materials as a novel platform for tunable superconductivity.
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Affiliation(s)
| | - Paul Dreher
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Ananthu P Surdendran
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-41296, Sweden
| | - Wen Wan
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Melanie Timpel
- Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, Povo, Trento IT-38123, Italy
| | - Roberto Verucchi
- Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, Povo, Trento IT-38123, Italy
| | - Celia Rogero
- Materials Physics Center CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Spain
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Thilo Bauch
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-41296, Sweden
| | - Floriana Lombardi
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-41296, Sweden
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Basque Country 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
| | - Marco Vittorio Nardi
- Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, Povo, Trento IT-38123, Italy
| | - Miguel M Ugeda
- Materials Physics Center CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Basque Country 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
| | - Marco Gobbi
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Basque Country 20018, Spain
- Materials Physics Center CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
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27
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Chen J, Shan Y, Wang Q, Zhu J, Liu R. P-type laser-doped WSe 2/MoTe 2 van der Waals heterostructure photodetector. NANOTECHNOLOGY 2020; 31:295201. [PMID: 32268302 DOI: 10.1088/1361-6528/ab87cd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials are being studied extensively for their prospective applications in photodetectors. As the pristine WSe2/MoTe2 heterostructure is a type I (straddling gap) structure, it cannot be used as a photovoltaic device theoretically, although both WSe2 and MoTe2 have excellent photoelectric properties. The Fermi level of p-doped WSe2 is close to its valence band. The p-doped WSe2/MoTe2 heterostructure can perform as a photovoltaic device because a built-in electric field appears at the interface between MoTe2 and p-doped WSe2. Here, a 633 nm laser was used for scanning the surface of WSe2 in order to obtain the p-doped WSe2. x-ray photoelectron spectroscopy (XPS) and electrical measurements verified that p-type doping in WSe2 is produced through laser treatment. The p-type doping in WSe2 includes substoichiometric WOx and nonstoichiometric WSex. A photovoltaic device using p-doped WSe2 and MoTe2 was successfully fabricated. The band structure, light-matter reactions, and carrier-transport in the p-doped WSe2/MoTe2 heterojunction were analyzed. The results showed that this photodetector has an on/off ratio of ≈104, dark current of ≈1 pA, and response time of 72 μs under the illumination of 633 nm laser at zero bias (V ds = 0 V). The proposed p-doping method may provide a new approach to improve the performance of nanoscale optoelectronic devices.
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Affiliation(s)
- J Chen
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China. These authors contributed equally to this work
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28
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He Q, Liu Y, Tan C, Zhai W, Nam GH, Zhang H. Quest for p-Type Two-Dimensional Semiconductors. ACS NANO 2019; 13:12294-12300. [PMID: 31674755 DOI: 10.1021/acsnano.9b07618] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) semiconductors have demonstrated great potential in modern nanotechnologies across a variety of research fields, including (opto-)electronics, spintronics, and electro-/photocatalysis. Interestingly, the vast majority of 2D semiconductors, such as the widely explored transition-metal dichalcogenides, are n-type or ambipolar. The search for p-type 2D semiconductors in the past decade has succeeded in identifying only a few promising candidate materials. In this Perspective, we discuss various strategies to obtain p-type conduction in normally n-type or ambipolar 2D semiconductors and, more importantly, the direct synthesis of p-type 2D semiconductors such as black phosphorus, 2D tellurium, and, most recently, α-MnS.
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Affiliation(s)
- Qiyuan He
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Chaoliang Tan
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Wei Zhai
- Department of Chemistry , City University of Hong Kong , Kowloon , Hong Kong, China
| | - Gwang-Hyeon Nam
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Hua Zhang
- Department of Chemistry , City University of Hong Kong , Kowloon , Hong Kong, China
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
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29
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Kim J, Heo K, Kang D, Shin C, Lee S, Yu H, Park J. Rhenium Diselenide (ReSe 2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1901255. [PMID: 31728284 PMCID: PMC6839648 DOI: 10.1002/advs.201901255] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2019] [Revised: 07/19/2019] [Indexed: 05/28/2023]
Abstract
In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm-2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W-1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.
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Affiliation(s)
- Jinok Kim
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Keun Heo
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Dong‐Ho Kang
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
- School of Electrical and Electronic EngineeringNanyang Technological University50 Nanyang Avenue639798SingaporeSingapore
| | - Changhwan Shin
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nano Technology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Hyun‐Yong Yu
- School of Electrical EngineeringKorea UniversitySeoul02841Korea
| | - Jin‐Hong Park
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
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30
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Chen Y, Yin C, Wang X, Jiang Y, Wang H, Wu B, Shen H, Lin T, Hu W, Meng X, Du P, Chu J, Wang Z, Wang J. Multimode Signal Processor Unit Based on the Ambipolar WSe 2-Cr Schottky Junction. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38895-38901. [PMID: 31556289 DOI: 10.1021/acsami.9b10698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A Schottky barrier is a double-edged sword in electronic and optoelectronic devices, especially devices based on two-dimensional materials. It may restrict the carrier transport in devices, but it can also realize multifunctional devices by architecture design. We designed a simple but novel device structure based on theWSe2-Cr Schottky junction with an asymmetric Schottky contact area of the source and drain. A significant rectification ratio over 105 and multiple rectifying states (e.g., full pass, forward pass, off, and backward pass) were achieved in the single Schottky junction tuned by gate voltage. Furthermore, switching characteristic, rectification characteristic, and amplitude of a sin wave can be effectively modulated by the electrical field or light illumination in a signal process circuit based on the WSe2-Cr Schottky junction. The highly tunable Schottky junction working as a multimode signal processor unit has great potential in future optoelectronic-integrated chips.
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Affiliation(s)
- Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
- University of Chinese Academy of Sciences , 19 Yuquan Road , Beijing 100049 , China
| | - Chong Yin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , 38 Zhe Da Road , Hangzhou 310007 , China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Yiyang Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Haoliang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Binmin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Piyi Du
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , 38 Zhe Da Road , Hangzhou 310007 , China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
| | - Zongrong Wang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , 38 Zhe Da Road , Hangzhou 310007 , China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China
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31
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Stoeckel MA, Gobbi M, Leydecker T, Wang Y, Eredia M, Bonacchi S, Verucchi R, Timpel M, Nardi MV, Orgiu E, Samorì P. Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe 2 Devices via Tailored Molecular Functionalization. ACS NANO 2019; 13:11613-11622. [PMID: 31509382 DOI: 10.1021/acsnano.9b05423] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
WSe2 is a layered ambipolar semiconductor enabling hole and electron transport, which renders it a suitable active component for logic circuitry. However, solid-state devices based on single- and bilayer WSe2 typically exhibit unipolar transport and poor electrical performance when conventional SiO2 dielectric and Au electrodes are used. Here, we show that silane-containing functional molecules form ordered monolayers on the top of the WSe2 surface, thereby boosting its electrical performance in single- and bilayer field-effect transistors. In particular, by employing SiO2 dielectric substrates and top Au electrodes, we measure unipolar mobility as high as μh = 150 cm2 V-1 s-1 and μe = 17.9 cm2 V-1 s-1 in WSe2 single-layer devices when ad hoc molecular monolayers are chosen. Additionally, by asymmetric double-side functionalization with two different molecules, we provide opposite polarity to the top and bottom layer of bilayer WSe2, demonstrating nearly balanced ambipolarity at the bilayer limit. Our results indicate that the controlled functionalization of the two sides of the WSe2 mono- and bilayer flakes with highly ordered molecular monolayers offers the possibility to simultaneously achieve energy level engineering and defect functionalization, representing a path toward deterministic control over charge transport in 2D materials.
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Affiliation(s)
| | - Marco Gobbi
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
- Centro de Física de Materiales (CSIC-UPV/EHU) , paseo Manuel de Lardizabal 5 , E-20018 Donostia , San Sebastián , Spain
| | - Tim Leydecker
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
| | - Ye Wang
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
| | - Matilde Eredia
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
| | - Sara Bonacchi
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
- Dipartimento di Scienze Chimiche , Università di Padova , Via Marzolo, 1 , 35131 Padova . Italy
| | - Roberto Verucchi
- Istituto dei Materiali per l'Elettronica ed il Magnetismo , IMEM-CNR , Sezione di Trento, Via alla Cascata 56/C, Povo , 38100 Trento , Italy
| | - Melanie Timpel
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
| | - Marco Vittorio Nardi
- Istituto dei Materiali per l'Elettronica ed il Magnetismo , IMEM-CNR , Sezione di Trento, Via alla Cascata 56/C, Povo , 38100 Trento , Italy
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
| | - Emanuele Orgiu
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
- INRS-Centre Énergie Matériaux Télécommunications , 1650 Blv. Lionel-Boulet , J3X 1S2 Varennes Québec , Canada
| | - Paolo Samorì
- Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France
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Krayev A, Bailey CS, Jo K, Wang S, Singh A, Darlington T, Liu GY, Gradecak S, Schuck PJ, Pop E, Jariwala D. Dry Transfer of van der Waals Crystals to Noble Metal Surfaces To Enable Characterization of Buried Interfaces. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38218-38225. [PMID: 31512847 DOI: 10.1021/acsami.9b09798] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have been explored for many optoelectronic applications. Most of these applications require them to be on insulating substrates. However, for many fundamental property characterizations, such as mapping surface potential or conductance, insulating substrates are nonideal as they lead to charging and doping effects or impose the inhomogeneity of their charge environment on the atomically thin 2D layers. Here, we report a simple method of residue-free dry transfer of 2D TMDC crystal layers. This method is enabled via noble-metal (gold, silver) thin films and allows comprehensive nanoscale characterization of transferred TMDC crystals with multiple scanning probe microscopy techniques. In particular, intimate contact with underlying metal allows efficient tip-enhanced Raman scattering characterization, providing high spatial resolution (<20 nm) for Raman spectroscopy. Further, scanning Kelvin probe force microscopy allows high-resolution mapping of surface potential on transferred crystals, revealing their spatially varying structural and electronic properties. The layer-dependent contact potential difference is clearly observed and explained by charge transfer from contacts with Au and Ag. The demonstrated sample preparation technique can be generalized to probe many different 2D material surfaces and has broad implications in understanding of the metal contacts and buried interfaces in 2D material-based devices.
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Affiliation(s)
- Andrey Krayev
- Horiba Scientific , Novato , California 94949 , United States
| | - Connor S Bailey
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Shuo Wang
- Department of Chemistry , University of California , Davis , California 95616 , United States
| | - Akshay Singh
- Department of Materials Science and Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Thomas Darlington
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
| | - Gang-Yu Liu
- Department of Chemistry , University of California , Davis , California 95616 , United States
| | - Silvija Gradecak
- Department of Materials Science and Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - P James Schuck
- Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States
| | - Eric Pop
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
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33
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Yamamoto M, Nouchi R, Kanki T, Nakaharai S, Hattori AN, Watanabe K, Taniguchi T, Wakayama Y, Ueno K, Tanaka H. Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2019; 11:36871-36879. [PMID: 31525896 DOI: 10.1021/acsami.9b13763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Phase-transition field-effect transistors (FETs) are a class of steep-slope devices that show abrupt on/off switching owing to the metal-insulator transition (MIT) induced in the contacting materials. An important avenue to develop phase-transition FETs is to understand the charge injection mechanism at the junction of the contacting MIT materials and semiconductor channels. Here, toward the realization of high-performance phase-transition FETs, we investigate the contact properties of heterojunctions between semiconducting transition-metal dichalcogenides (TMDCs) and vanadium dioxide (VO2) that undergoes a MIT at a critical temperature (Tc) of approximately 340 K. We fabricated transistors based on molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) in contact with the VO2 source/drain electrodes. The VO2-contacted MoS2 transistor exhibited n-type transport both below and above Tc. Across the MIT, the on-current was observed to increase only by a factor of 5, in contrast to the order-of-magnitude change in the resistance of the VO2 electrodes, suggesting the existence of high contact resistance. The Arrhenius analyses of the gate-dependent drain current confirmed the formation of the interfacial barrier at the VO2/MoS2 contacts, irrespective of the phase state of VO2. The VO2-contacted WSe2 transistor showed ambipolar transport, indicating that the Fermi level lies near the mid gap of WSe2. These observations provide insights into the contact properties of phase-transition FETs based on VO2 and TMDCs and suggest the need for contact engineering for high-performance operations.
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Affiliation(s)
- Mahito Yamamoto
- Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan
| | - Ryo Nouchi
- Graduate School of Engineering , Osaka Prefecture University , Sakai , Osaka 599-8570 , Japan
- JST PRESTO , Kawaguchi , Saitama 332-0012 , Japan
| | - Teruo Kanki
- Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan
| | - Shu Nakaharai
- National Institute for Materials Science , Tsukuba , Ibaraki 305-0044 , Japan
| | - Azusa N Hattori
- Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , Tsukuba , Ibaraki 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , Tsukuba , Ibaraki 305-0044 , Japan
| | - Yutaka Wakayama
- National Institute for Materials Science , Tsukuba , Ibaraki 305-0044 , Japan
| | - Keiji Ueno
- Department of Chemistry, Graduate School of Science and Engineering , Saitama University , Saitama 338-8570 , Japan
| | - Hidekazu Tanaka
- Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan
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34
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Abstract
Two-dimensional van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines n-C m H2m+1NH2, with m = 4 through 11, are highly effective in protecting the optoelectronic properties of these materials, such as black phosphorus (BP) and transition-metal dichalcogenides (TMDs: WS2, 1T'-MoTe2, WTe2, WSe2, TaS2, and NbSe2). As a representative example, n-hexylamine (m = 6) can be applied in the form of thin molecular monolayers on BP flakes with less than 2-nm thickness and can prolong BP's lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, H2 annealing, and organic solvents, but can be removed by certain organic acids.
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35
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Cho K, Pak J, Chung S, Lee T. Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers. ACS NANO 2019; 13:9713-9734. [PMID: 31330111 DOI: 10.1021/acsnano.9b02540] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The interface engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) has been regarded as a promising strategy to modulate their outstanding electrical and optoelectronic properties because of their inherent 2D nature and large surface-to-volume ratio. In particular, introducing organic molecules and polymers directly onto the surface of TMDs has been explored to passivate the surface defects or achieve better interfacial properties with neighboring surfaces efficiently, thus leading to great opportunities for the realization of high-performance TMD-based applications. This review provides recent progress in the interface engineering of TMDs with organic molecules and polymers corresponding to the modulation of their electrical and optoelectronic characteristics. Depending on the interfaces between the surface of TMDs and dielectric, conductive contacts or the ambient environment, we present various strategies to introduce an organic interlayer from materials to processing. In addition, the role of native defects on the surface of TMDs, such as adatoms or vacancies, in determining their electrical characteristics is also discussed in detail. Finally, the future challenges and opportunities associated with the interface engineering are highlighted.
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Affiliation(s)
- Kyungjune Cho
- Department of Physics and Astronomy and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Jinsu Pak
- Department of Physics and Astronomy and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Seungjun Chung
- Photo-electronic Hybrids Research Center , Korea Institute of Science and Technology (KIST) , Seoul 02792 , Korea
| | - Takhee Lee
- Department of Physics and Astronomy and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
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36
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Cho Y, Park JH, Kim M, Jeong Y, Yu S, Lim JY, Yi Y, Im S. Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS 2 and p-MoTe 2 Transistors. NANO LETTERS 2019; 19:2456-2463. [PMID: 30855970 DOI: 10.1021/acs.nanolett.9b00019] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage ( Vth) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the Vth of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their Vth toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe2 and n-MoS2 channels shows superior voltage gain and minimal power consumption after HAT-CN deposition, compared to its initial performance. When the same TMD FETs of the CMOS structure are integrated into an OLED pixel circuit for ambipolar switching, the circuit with HAT-CN film demonstrates complete ON/OFF switching of OLED pixel, which was not switched off without HAT-CN.
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Affiliation(s)
- Yongjae Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Ji Hoon Park
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Minju Kim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Yeonsu Jeong
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Sanghyuck Yu
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - June Yeong Lim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
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37
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Di Bartolomeo A, Urban F, Passacantando M, McEvoy N, Peters L, Iemmo L, Luongo G, Romeo F, Giubileo F. A WSe 2 vertical field emission transistor. NANOSCALE 2019; 11:1538-1548. [PMID: 30629066 DOI: 10.1039/c8nr09068h] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
We report the first observation of a gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ∼100 V μm-1 and exhibits good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on the WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.
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Affiliation(s)
- Antonio Di Bartolomeo
- Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy.
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38
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Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T. Doping engineering and functionalization of two-dimensional metal chalcogenides. NANOSCALE HORIZONS 2019; 4:26-51. [PMID: 32254144 DOI: 10.1039/c8nh00150b] [Citation(s) in RCA: 106] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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Affiliation(s)
- Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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39
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Jiang J, Li N, Zou J, Zhou X, Eda G, Zhang Q, Zhang H, Li LJ, Zhai T, Wee ATS. Synergistic additive-mediated CVD growth and chemical modification of 2D materials. Chem Soc Rev 2019; 48:4639-4654. [DOI: 10.1039/c9cs00348g] [Citation(s) in RCA: 81] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.
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Affiliation(s)
- Jizhou Jiang
- School of Environmental Ecology and Biological Engineering
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan
- P. R. China
| | - Neng Li
- State Key Laboratory of Silicate Materials for Architectures
- Wuhan University of Technology
- Wuhan
- P. R. China
| | - Jing Zou
- School of Environmental Ecology and Biological Engineering
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan
- P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan
- P. R. China
| | - Goki Eda
- Department of Physics
- National University of Singapore
- Singapore 117542
- Singapore
| | - Qingfu Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan
- P. R. China
| | - Hua Zhang
- Center for Programmable Materials
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
| | - Lain-Jong Li
- School of Materials Science and Engineering
- University of New South Wales
- Australia
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan
- P. R. China
| | - Andrew T. S. Wee
- Department of Physics
- National University of Singapore
- Singapore 117542
- Singapore
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40
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Guo Y, Dai B, Peng J, Wu C, Xie Y. Electron Transport in Low Dimensional Solids: A Surface Chemistry Perspective. J Am Chem Soc 2018; 141:723-732. [DOI: 10.1021/jacs.8b09821] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Affiliation(s)
- Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Baohu Dai
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Jing Peng
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, People’s Republic of China
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41
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Bertolazzi S, Gobbi M, Zhao Y, Backes C, Samorì P. Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides. Chem Soc Rev 2018; 47:6845-6888. [PMID: 30043037 DOI: 10.1039/c8cs00169c] [Citation(s) in RCA: 118] [Impact Index Per Article: 19.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.
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Affiliation(s)
- Simone Bertolazzi
- Université de Strasbourg, CNRS, ISIS, 8 alleé Gaspard Monge, 67000 Strasbourg, France.
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42
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Yoo H, Hong S, On S, Ahn H, Lee HK, Hong YK, Kim S, Kim JJ. Chemical Doping Effects in Multilayer MoS 2 and Its Application in Complementary Inverter. ACS APPLIED MATERIALS & INTERFACES 2018; 10:23270-23276. [PMID: 29916693 DOI: 10.1021/acsami.8b08773] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Multilayer MoS2 has been gaining interest as a new semiconducting material for flexible displays, memory devices, chemical/biosensors, and photodetectors. However, conventional multilayer MoS2 devices have exhibited limited performances due to the Schottky barrier and defects. Here, we demonstrate poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) doping effects in multilayer MoS2, which results in improved electrical characteristics (∼4.6× higher on-current compared to the baseline and a high current on/off ratio of 106). Synchrotron-based study using X-ray photoelectron spectroscopy and grazing incidence wide-angle X-ray diffraction provides mechanisms that align the edge-on crystallites (97.5%) of the PDPP3T as well as a larger interaction with MoS2 that leads to dipole and charge transfer effects (at annealing temperature of 300 °C), which support the observed enhancement of the electrical characteristics. Furthermore, we demonstrate a complementary metal-oxide-semiconductor inverter that uses a p-type MoSe2 and a PDPP3T-doped MoS2 as charging and discharging channels, respectively.
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Affiliation(s)
| | - Seongin Hong
- Multi-Functional Nano/Bio Electronics Laboratory , Sungkyunkwan University , Suwon 440-746 , Republic of Korea
| | | | | | | | - Young Ki Hong
- Multi-Functional Nano/Bio Electronics Laboratory , Sungkyunkwan University , Suwon 440-746 , Republic of Korea
| | - Sunkook Kim
- Multi-Functional Nano/Bio Electronics Laboratory , Sungkyunkwan University , Suwon 440-746 , Republic of Korea
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43
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Muhabie AA, Ho CH, Gebeyehu BT, Huang SY, Chiu CW, Lai JY, Lee DJ, Cheng CC. Dynamic tungsten diselenide nanomaterials: supramolecular assembly-induced structural transition over exfoliated two-dimensional nanosheets. Chem Sci 2018; 9:5452-5460. [PMID: 30155235 PMCID: PMC6011224 DOI: 10.1039/c8sc01778f] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2018] [Accepted: 05/30/2018] [Indexed: 01/31/2023] Open
Abstract
Supramolecular polymers can easily control the lamellar microstructures on exfoliated tungsten diselenide nanosheets.
A simple and effective method for direct exfoliation of tungsten diselenide (WSe2) into few-layered nanosheets has been successfully developed by employing a low molecular weight adenine-functionalized supramolecular polymer (A-PPG). In this study, we discover A-PPG can self-assemble into a long-range, ordered lamellar microstructure on the surface of WSe2 due to the efficient non-covalent interactions between A-PPG and WSe2. Morphological and light scattering studies confirmed the dynamic self-assembly behavior of A-PPG has the capacity to efficiently manipulate the transition between contractile and extended lamellar microstructures on the surface of metallic 1T-phase and semiconducting 2H-phase WSe2 nanosheets, respectively. The extent of WSe2 exfoliation can be easily controlled by systematically adjusting the amount of A-PPG in the composites, to obtain nanocomposites with the desired functional characteristics. In addition, the resulting composites possess unique liquid–solid phase transition behavior and excellent thermoreversible properties, revealing the self-assembled lamellar structure of A-PPG functions as a critical factor to manipulate and tailor the physical properties of exfoliated WSe2. This newly developed method of producing exfoliated WSe2 provides a useful conceptual and potential framework for developing WSe2-based multifunctional nanocomposites to extend their application in solution-processed semiconductor devices.
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Affiliation(s)
- Adem Ali Muhabie
- Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
| | - Belete Tewabe Gebeyehu
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
| | - Shan-You Huang
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
| | - Chih-Wei Chiu
- Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan
| | - Juin-Yih Lai
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan . .,Department of Chemical Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan.,R&D Center for Membrane Technology , Chung Yuan Christian University , Chungli , Taoyuan 32043 , Taiwan
| | - Duu-Jong Lee
- Department of Chemical Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan.,Department of Chemical Engineering , National Taiwan University , Taipei 10617 , Taiwan.,R&D Center for Membrane Technology , Chung Yuan Christian University , Chungli , Taoyuan 32043 , Taiwan
| | - Chih-Chia Cheng
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
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44
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Kang WT, Lee IM, Yun SJ, Song YI, Kim K, Kim DH, Shin YS, Lee K, Heo J, Kim YM, Lee YH, Yu WJ. Direct growth of doping controlled monolayer WSe 2 by selenium-phosphorus substitution. NANOSCALE 2018; 10:11397-11402. [PMID: 29877543 DOI: 10.1039/c8nr03427c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Although many studies have been carried out on the doping of transition metal dichalcogenides (TMDCs), introducing controllable amounts of dopants into a TMD lattice is still insufficient. Here we demonstrate doping controlled TMDC growth by the replacement of selenium with phosphorus during the synthesis of the monolayer WSe2. The phosphorus doping density was precisely controlled by fine adjustment of the amount of P2O5 dopant powder along the pre-annealing time. Raman spectroscopy, photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and high-angle annular bright field scanning tunneling electron microscopy (HAADF STEM) provide evidence that P doping occurs within the WSe2 crystal with P occupying the substitutional Se sites. With regard to its electrical characteristics, the hole majority current of P-doped WSe2 is 100-times higher than that of the intrinsic WSe2. The measured doping concentration ranged from ∼8.16 × 1010 to ∼1.20 × 1012 depending on the amount of P2O5 dopant powder by pre-annealing.
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Affiliation(s)
- Won Tae Kang
- Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
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45
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Gobbi M, Orgiu E, Samorì P. When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706103. [PMID: 29441680 DOI: 10.1002/adma.201706103] [Citation(s) in RCA: 42] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2017] [Revised: 11/16/2017] [Indexed: 05/21/2023]
Abstract
van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on-demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self-assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design.
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Affiliation(s)
- Marco Gobbi
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000, Strasbourg, France
| | - Emanuele Orgiu
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000, Strasbourg, France
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000, Strasbourg, France
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Yin C, Wang X, Chen Y, Li D, Lin T, Sun S, Shen H, Du P, Sun J, Meng X, Chu J, Wong HF, Leung CW, Wang Z, Wang J. A ferroelectric relaxor polymer-enhanced p-type WSe 2 transistor. NANOSCALE 2018; 10:1727-1734. [PMID: 29308498 DOI: 10.1039/c7nr08034d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
WSe2 has attracted extensive attention for p-FETs due to its air stability and high mobility. However, the Fermi level of WSe2 is close to the middle of the band gap, which will induce a high contact resistance with metals and thus limit the field effect mobility. In this case, a high work voltage is always required to achieve a large ON/OFF ratio. Herein, a stable WSe2 p-doping technique of coating using a ferroelectric relaxor polymer P(VDF-TrFE-CFE) is proposed. Unlike other doping methods, P(VDF-TrFE-CFE) not only can modify the Fermi level of WSe2 but can also act as a high-k gate dielectric in an FET. Dramatic enhancement of the field effect hole mobility from 27 to 170 cm2 V-1 s-1 on a six-layer WSe2 FET has been achieved. Moreover, an FET device based on bilayer WSe2 with P(VDF-TrFE-CFE) as the top gate dielectric is fabricated, which exhibits high p-type performance over a low top gate voltage range. Furthermore, low-temperature experiments reveal the influence of the phase transition of P(VDF-TrFE-CFE) on the channel carrier density and mobility. With a decrease in temperature, field effect hole mobility increases and approaches up to 900 cm2 V-1 s-1 at 200 K. The combination of the p-doping and gating with P(VDF-TrFE-CFE) provides a promising solution for obtaining high-performance p-FET with 2D semiconductors.
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Affiliation(s)
- Chong Yin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 38 Zhe Da Road, Hangzhou 310027, China
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Yu X, Guijarro N, Johnson M, Sivula K. Defect Mitigation of Solution-Processed 2D WSe 2 Nanoflakes for Solar-to-Hydrogen Conversion. NANO LETTERS 2018; 18:215-222. [PMID: 29244516 DOI: 10.1021/acs.nanolett.7b03948] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Few-atomic-layer nanoflakes of liquid-phase exfoliated semiconducting transition metal dichalcogenides (TMDs) hold promise for large-area, high-performance, low-cost solar energy conversion, but their performance is limited by recombination at defect sites. Herein, we examine the role of defects on the performance of WSe2 thin film photocathodes for solar H2 production by applying two separate treatments, a pre-exfoliation annealing and a post-deposition surfactant attachment, designed to target intraflake and edge defects, respectively. Analysis by TEM, XRD, XPS, photoluminescence, and impedance spectroscopy are used to characterize the effects of the treatments and photoelectrochemical (PEC) measurements using an optimized Pt-Cu cocatalyst (found to offer improved robustness compared to Pt) are used to quantify the performance of photocathodes (ca. 11 nm thick) consisting of 100-1000 nm nanoflakes. Surfactant treatment results in an increased photocurrent attributed to edge site passivation. The pre-annealing treatment alone, while clearly altering the crystallinity of pre-exfoliated powders, does not significantly affect the photocurrent. However, applying both defect treatments affords a considerable improvement that represents a new benchmark for the performance of solution-processed WSe2: solar photocurrents for H2 evolution up to 4.0 mA cm-2 and internal quantum efficiency over 60% (740 nm illumination). These results also show that charge recombination at flake edges dominates performance in bare TMD nanoflakes, but when the edge defects are passivated, internal defects become important and can be reduced by pre-annealing.
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Affiliation(s)
- Xiaoyun Yu
- Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL) , Station 6, 1015 Lausanne, Switzerland
| | - Néstor Guijarro
- Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL) , Station 6, 1015 Lausanne, Switzerland
| | - Melissa Johnson
- Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL) , Station 6, 1015 Lausanne, Switzerland
| | - Kevin Sivula
- Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, École Polytechnique Fédérale de Lausanne (EPFL) , Station 6, 1015 Lausanne, Switzerland
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Ko S, Na J, Moon YS, Zschieschang U, Acharya R, Klauk H, Kim GT, Burghard M, Kern K. Few-Layer WSe 2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. ACS APPLIED MATERIALS & INTERFACES 2017; 9:42912-42918. [PMID: 29200255 DOI: 10.1021/acsami.7b13395] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al2O3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W-1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.
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Affiliation(s)
- Seungpil Ko
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Junhong Na
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Young-Sun Moon
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Ute Zschieschang
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Rachana Acharya
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Hagen Klauk
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Marko Burghard
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Klaus Kern
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
- Institut de Physique, École Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
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Lin CY, Zhu X, Tsai SH, Tsai SP, Lei S, Shi Y, Li LJ, Huang SJ, Wu WF, Yeh WK, Su YK, Wang KL, Lan YW. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS NANO 2017; 11:11015-11023. [PMID: 28976732 DOI: 10.1021/acsnano.7b05012] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.
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Affiliation(s)
- Che-Yu Lin
- Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University , Tainan 701, Taiwan
| | - Xiaodan Zhu
- Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Shin-Hung Tsai
- Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Shiao-Po Tsai
- Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Sidong Lei
- Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Yumeng Shi
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University , Shenzhen 518060, China
| | - Lain-Jong Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955, Kingdom of Saudi Arabia
| | - Shyh-Jer Huang
- Advanced Optoelectronic Technology Center, National Cheng Kung University , Tainan 701, Taiwan
| | - Wen-Fa Wu
- National Nano Device Laboratories, National Applied Research Laboratories , Hsinchu 30078, Taiwan
| | - Wen-Kuan Yeh
- National Nano Device Laboratories, National Applied Research Laboratories , Hsinchu 30078, Taiwan
| | - Yan-Kuin Su
- Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University , Tainan 701, Taiwan
- Department of Electrical Engineering, Kun Shan University , Tainan 710, Taiwan
| | - Kang L Wang
- Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University , Taipei 11677, Taiwan
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50
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Cheng L, Lee J, Zhu H, Ravichandran AV, Wang Q, Lucero AT, Kim MJ, Wallace RM, Colombo L, Kim J. Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS 2 for Two-Dimensional Material-Based Devices. ACS NANO 2017; 11:10243-10252. [PMID: 28832118 DOI: 10.1021/acsnano.7b04813] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The successful realization of high-performance 2D-materials-based nanoelectronics requires integration of high-quality dielectric films as a gate insulator. In this work, we explore the integration of organic and inorganic hybrid dielectrics on MoS2 and study the chemical and electrical properties of these hybrid films. Our atomic force microscopy, X-ray photoelectron spectroscopy (XPS), Raman, and photoluminescence results show that, aside from the excellent film uniformity and thickness scalability down to 2.5 nm, the molecular layer deposition of octenyltrichlorosilane (OTS) and Al2O3 hybrid films preserves the chemical and structural integrity of the MoS2 surface. The XPS band alignment analysis and electrical characterization reveal that through the inclusion of an organic layer in the dielectric film, the band gap and dielectric constant can be tuned from ∼7.00 to 6.09 eV and ∼9.0 to 4.5, respectively. Furthermore, the hybrid films show promising dielectric properties, including a high breakdown field of ∼7.8 MV/cm, a low leakage current density of ∼1 × 10-6 A/cm2 at 1 MV/cm, a small hysteresis of ∼50 mV, and a top-gate subthreshold voltage swing of ∼79 mV/dec. Our experimental findings provide a facile way of fabricating scalable hybrid gate dielectrics on transition metal dichalcogenides for 2D-material-based flexible electronics applications.
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Affiliation(s)
- Lanxia Cheng
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Jaebeom Lee
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Hui Zhu
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Arul Vigneswar Ravichandran
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Qingxiao Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Antonio T Lucero
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Moon J Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Luigi Colombo
- Texas Instruments , Dallas, Texas 75243, United States
| | - Jiyoung Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
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