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Lu D, Chen Y, Lu Z, Ma L, Tao Q, Li Z, Kong L, Liu L, Yang X, Ding S, Liu X, Li Y, Wu R, Wang Y, Hu Y, Duan X, Liao L, Liu Y. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination. Nature 2024:10.1038/s41586-024-07406-z. [PMID: 38778106 DOI: 10.1038/s41586-024-07406-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 04/10/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) semiconductors have shown great potential for monolithic three-dimensional (M3D) integration due to their dangling-bonds-free surface and the ability to integrate to various substrates without the conventional constraint of lattice matching1-10. However, with atomically thin body thickness, 2D semiconductors are not compatible with various high-energy processes in microelectronics11-13, where the M3D integration of multiple 2D circuit tiers is challenging. Here we report an alternative low-temperature M3D integration approach by van der Waals (vdW) lamination of entire prefabricated circuit tiers, where the processing temperature is controlled to 120 °C. By further repeating the vdW lamination process tier by tier, an M3D integrated system is achieved with 10 circuit tiers in the vertical direction, overcoming previous thermal budget limitations. Detailed electrical characterization demonstrates the bottom 2D transistor is not impacted after repetitively laminating vdW circuit tiers on top. Furthermore, by vertically connecting devices within different tiers through vdW inter-tier vias, various logic and heterogeneous structures are realized with desired system functions. Our demonstration provides a low-temperature route towards fabricating M3D circuits with increased numbers of tiers.
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Affiliation(s)
- Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Shuimei Ding
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yunxin Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.
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Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
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Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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3
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Du Y, Tang J, Li Y, Xi Y, Li Y, Li J, Huang H, Qin Q, Zhang Q, Gao B, Deng N, Qian H, Wu H. Monolithic 3D Integration of Analog RRAM-Based Computing-in-Memory and Sensor for Energy-Efficient Near-Sensor Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2302658. [PMID: 37652463 DOI: 10.1002/adma.202302658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Revised: 08/14/2023] [Indexed: 09/02/2023]
Abstract
In the era of the Internet of Things, vast amounts of data generated at sensory nodes impose critical challenges on the data-transfer bandwidth and energy efficiency of computing hardware. A near-sensor computing (NSC) architecture places the processing units closer to the sensors such that the generated data can be processed almost in situ with high efficiency. This study demonstrates the monolithic three-dimensional (M3D) integration of a photosensor array, analog computing-in-memory (CIM), and Si complementary metal-oxide-semiconductor (CMOS) logic circuits, named M3D-SAIL. This approach exploits the high-bandwidth on-chip data transfer and massively parallel CIM cores to realize an energy-efficient NSC architecture. The 1st layer of the Si CMOS circuits serves as the control logic and peripheral circuits. The 2nd layer comprises a 1 k-bit one-transistor-one-resistor (1T1R) array with InGaZnOx field-effect transistor (IGZO-FET) and resistive random-access memory (RRAM) for analog CIM. The 3rd layer comprises multiple IGZO-FET-based photosensor arrays for wavelength-dependent optical sensing. The structural integrity and function of each layer are comprehensively verified. Furthermore, NSC is implemented using the M3D-SAIL architecture for a typical video keyframe-extraction task, achieving a high classification accuracy of 96.7% as well as a 31.5× lower energy consumption and 1.91× faster computing speed compared to its 2D counterpart.
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Affiliation(s)
- Yiwei Du
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Jianshi Tang
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yijun Li
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yue Xi
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yuankun Li
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Jiaming Li
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Heyi Huang
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Qi Qin
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Qingtian Zhang
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Bin Gao
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Ning Deng
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - He Qian
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Huaqiang Wu
- School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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4
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Yan H, Liu S, Wen N, Yin J, Jiang H. Self-healing flexible strain sensor fabricated through 3D printing template sacrifice for motion monitoring with enhanced healing and mechanical performance. NANOTECHNOLOGY 2024; 35:245503. [PMID: 38271718 DOI: 10.1088/1361-6528/ad22a7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Accepted: 01/24/2024] [Indexed: 01/27/2024]
Abstract
With the advancements in flexible materials and information technology, flexible sensors are becoming increasingly pervasive in various aspects of life and production. They hold immense potential for further development in areas such as motion detection, electronic skin, soft robots, and wearable devices. Aminopropyl-terminated polydimethylsiloxane (PDMS) was used as the raw material, while a diisocyanate reagent served as the cross-linking agent for the polymerization reaction, which involved the introduction of ureido groups, containing N-H and C=O bonds, into the long siloxane chain. The dynamic hydrogen bonding between the clusters completes the self-healing of the material. Using 1-[3-(trimethoxysilyl)propyl]urea as a grafting agent, the urea groups are introduced into graphene oxide and carbon nanotubes (CNTs) as conductive fillers. Subsequently, a flexible polymer is used as the substrate to prepare conductive flexible self-healing composites. By controlling the amount of conductive fillers, flexible strain materials with varying sensitivities are obtained. Design the structure of the flexible strain sensor using three-dimensional (3D) modeling software with deposition printing method.
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Affiliation(s)
- Hui Yan
- School of Mechatronic Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150000, People's Republic of China
| | - Shuofu Liu
- School of Mechatronic Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150000, People's Republic of China
| | - Nan Wen
- Semiconductor Manufacturing International Corporation, No. 18, Wenchang Avenue, Daxing District, Beijing 100176, People's Republic of China
| | - Jiyuan Yin
- School of Mechatronic Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150000, People's Republic of China
| | - Hongyuan Jiang
- School of Mechatronic Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150000, People's Republic of China
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5
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Wang N, Li Y, Jiang W, Qin Z, Liu J. Large-range two-dimensional sub-nano-misalignment sensing for lithography with a piecewise frequency regression network. OPTICS LETTERS 2024; 49:1485-1488. [PMID: 38489431 DOI: 10.1364/ol.511013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Accepted: 01/31/2024] [Indexed: 03/17/2024]
Abstract
Circular gratings have been traditionally used as coarse alignment markers rather than fine ones for carrying out two-dimensional (2D) large-range misalignment measurements. This is primarily due to its complex phase distribution, which renders the extraction of information from high-precision alignment challenging using conventional frequency filtering methods. Along these lines, in this work, a novel, to the best of our knowledge, convolutional regression filter capable of achieving a 2D misalignment measurement with an impressive accuracy of 0.82 nm across a 3 mm range was introduced. Importantly, the proposed approach exhibited robustness against system errors and noise. It is anticipated that this strategy will provide an effective solution for similar misalignment sensing applications and hold promise for addressing future challenges in these fields.
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6
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Aguirre F, Sebastian A, Le Gallo M, Song W, Wang T, Yang JJ, Lu W, Chang MF, Ielmini D, Yang Y, Mehonic A, Kenyon A, Villena MA, Roldán JB, Wu Y, Hsu HH, Raghavan N, Suñé J, Miranda E, Eltawil A, Setti G, Smagulova K, Salama KN, Krestinskaya O, Yan X, Ang KW, Jain S, Li S, Alharbi O, Pazos S, Lanza M. Hardware implementation of memristor-based artificial neural networks. Nat Commun 2024; 15:1974. [PMID: 38438350 PMCID: PMC10912231 DOI: 10.1038/s41467-024-45670-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Accepted: 02/01/2024] [Indexed: 03/06/2024] Open
Abstract
Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel. The low communication bandwidth between memory and processing units in conventional von Neumann machines does not support the requirements of emerging applications that rely extensively on large sets of data. More recent computing paradigms, such as high parallelization and near-memory computing, help alleviate the data communication bottleneck to some extent, but paradigm- shifting concepts are required. Memristors, a novel beyond-complementary metal-oxide-semiconductor (CMOS) technology, are a promising choice for memory devices due to their unique intrinsic device-level properties, enabling both storing and computing with a small, massively-parallel footprint at low power. Theoretically, this directly translates to a major boost in energy efficiency and computational throughput, but various practical challenges remain. In this work we review the latest efforts for achieving hardware-based memristive artificial neural networks (ANNs), describing with detail the working principia of each block and the different design alternatives with their own advantages and disadvantages, as well as the tools required for accurate estimation of performance metrics. Ultimately, we aim to provide a comprehensive protocol of the materials and methods involved in memristive neural networks to those aiming to start working in this field and the experts looking for a holistic approach.
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Affiliation(s)
- Fernando Aguirre
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), 08193, Barcelona, Spain
| | | | | | - Wenhao Song
- Department of Electrical and Computer Engineering, University of Southern California (USC), Los Angeles, CA, 90089, USA
| | - Tong Wang
- Department of Electrical and Computer Engineering, University of Southern California (USC), Los Angeles, CA, 90089, USA
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Southern California (USC), Los Angeles, CA, 90089, USA
| | - Wei Lu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Meng-Fan Chang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Daniele Ielmini
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da Vinci 32, 20133, Milano, Italy
| | - Yuchao Yang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, China
| | - Adnan Mehonic
- Department of Electronic and Electrical Engineering, University College London (UCL), Torrington Place, WC1E 7JE, London, UK
| | - Anthony Kenyon
- Department of Electronic and Electrical Engineering, University College London (UCL), Torrington Place, WC1E 7JE, London, UK
| | - Marco A Villena
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Juan B Roldán
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avenida Fuentenueva s/n, 18071, Granada, Spain
| | - Yuting Wu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Hung-Hsi Hsu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Nagarajan Raghavan
- Engineering Product Development (EPD) Pillar, Singapore University of Technology & Design, 8 Somapah Road, 487372, Singapore, Singapore
| | - Jordi Suñé
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), 08193, Barcelona, Spain
| | - Enrique Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), 08193, Barcelona, Spain
| | - Ahmed Eltawil
- Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Gianluca Setti
- Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Kamilya Smagulova
- Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Khaled N Salama
- Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Olga Krestinskaya
- Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University, Baoding, 071002, China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, College of Design and Engineering, National University of Singapore (NUS), Singapore, Singapore
| | - Samarth Jain
- Department of Electrical and Computer Engineering, College of Design and Engineering, National University of Singapore (NUS), Singapore, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, College of Design and Engineering, National University of Singapore (NUS), Singapore, Singapore
| | - Osamah Alharbi
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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7
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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8
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Hua Q, Shen G. Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics. Chem Soc Rev 2024; 53:1316-1353. [PMID: 38196334 DOI: 10.1039/d3cs00918a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight structure, and excellent mechanical robustness and conformability, have garnered significant attention due to their unprecedented potential in healthcare, advanced robotics, and human-machine interface technologies. An increasing number of low-dimensional nanostructures with exceptional mechanical, electronic, and/or optical properties are being developed for flexible/stretchable electronics to fulfill the functional and application requirements of information sensing, processing, and interactive loops. Compared to the traditional single-layer format, which has a restricted design space, a monolithic three-dimensional (M3D) integrated device architecture offers greater flexibility and stretchability for electronic devices, achieving a high-level of integration to accommodate the state-of-the-art design targets, such as skin-comfort, miniaturization, and multi-functionality. Low-dimensional nanostructures possess small size, unique characteristics, flexible/elastic adaptability, and effective vertical stacking capability, boosting the advancement of M3D-integrated flexible/stretchable systems. In this review, we provide a summary of the typical low-dimensional nanostructures found in semiconductor, interconnect, and substrate materials, and discuss the design rules of flexible/stretchable devices for intelligent sensing and data processing. Furthermore, artificial sensory systems in 3D integration have been reviewed, highlighting the advancements in flexible/stretchable electronics that are deployed with high-density, energy-efficiency, and multi-functionalities. Finally, we discuss the technical challenges and advanced methodologies involved in the design and optimization of low-dimensional nanostructures, to achieve monolithic 3D-integrated flexible/stretchable multi-sensory systems.
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Affiliation(s)
- Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
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9
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He J, Liang B, Kong W, Dai J, Liu F, Pan S, Wang C, Sun P, Kang B, Wang Y, Lu G. Self-Healing, Laminated, and Low Resistance NH 3 Sensor Based on 6,6',6″-(Nitrilotris(benzene-4,1-diyl))tris(5-phenylpyrazine-2,3-dicarbonitrile) Sensing Material Operating at Room Temperature. ACS Sens 2024; 9:171-181. [PMID: 38159288 DOI: 10.1021/acssensors.3c01804] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
With the rapid development of the concept of the Internet of Things (IoT), gas sensors with the function of simulating the human sense of smell became irreplaceable as a key element. Among them, ammonia (NH3) sensors played an important role in respiration tests, environmental monitoring, safety, and other fields. However, the fabrication of the high-performance device with high stability and resistance to mechanical damages was still a challenge. In this work, polyurethane (PU) with excellent self-healing ability was applied as the substrate, and the sensor was designed from new sensitive material design and device structure optimization, through applying the organic molecule with groups which could absorb NH3 and the laminated structure to shorten the electronic transmission path to achieve a low resistance state and favorable sensing properties. Accordingly, a room temperature flexible NH3 sensor based on 6,6',6″-(nitrilotris(benzene-4,1-diyl))tris(5-phenylpyrazine-2,3-dicarbonitrile) (TPA-3DCNPZ) was successfully developed. The device could self-heal by means of a thermal evaporation assisted method. It exhibited a detection limit of 1 ppm at 98% relative humidity (RH), as well as great stability, selectivity, bending flexibility, and self-healing properties. The improved NH3 sensing performance under high RH was further investigated by complex impedance plots (CIPs) and density functional theory (DFT), attributing to the enhanced adsorption of NH3. The TPA-3DCNPZ based NH3 sensors proved to have great potential for application on simulated exhaled breath to determine the severity of kidney diseases and the progress of treatment. This work also provided new ideas for the construction of high-performance room temperature NH3 sensors.
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Affiliation(s)
- Junming He
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Baoyan Liang
- Jihua Laboratory, 28 Huandao South Road, Foshan 528200, Guangdong, China
| | - Weibo Kong
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China
| | - Jianan Dai
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Fangmeng Liu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
- International Center of Future Science, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Si Pan
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Chenguang Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Peng Sun
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
- International Center of Future Science, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Bonan Kang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Yue Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Geyu Lu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensors, Jilin Province, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
- International Center of Future Science, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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10
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Zhang Y, Meng Y, Wang L, Lan C, Quan Q, Wang W, Lai Z, Wang W, Li Y, Yin D, Li D, Xie P, Chen D, Yang Z, Yip S, Lu Y, Wong CY, Ho JC. Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance. Nat Commun 2024; 15:728. [PMID: 38272917 PMCID: PMC10810900 DOI: 10.1038/s41467-024-44970-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Accepted: 01/11/2024] [Indexed: 01/27/2024] Open
Abstract
High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.
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Affiliation(s)
- Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - You Meng
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Liqiang Wang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Yezhan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Di Yin
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhe Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Chun-Yuen Wong
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan.
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11
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Ren SG, Dong AW, Yang L, Xue YB, Li JC, Yu YJ, Zhou HJ, Zuo WB, Li Y, Cheng WM, Miao XS. Self-Rectifying Memristors for Three-Dimensional In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307218. [PMID: 37972344 DOI: 10.1002/adma.202307218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 10/13/2023] [Indexed: 11/19/2023]
Abstract
Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In-memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large-scale and high-density crossbar arrays, particularly in three-dimensional (3D) integration. As a perfect solution to the sneak-path issue, a self-rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>102 Mbit). Moreover, SRM-configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
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Affiliation(s)
- Sheng-Guang Ren
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - A-Wei Dong
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ling Yang
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi-Bai Xue
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jian-Cong Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yin-Jie Yu
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hou-Ji Zhou
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Bin Zuo
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Wei-Ming Cheng
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Xiang-Shui Miao
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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12
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Jang YJ, Sharma A, Jung JP. Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7652. [PMID: 38138794 PMCID: PMC10744783 DOI: 10.3390/ma16247652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 12/03/2023] [Accepted: 12/12/2023] [Indexed: 12/24/2023]
Abstract
Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.
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Affiliation(s)
- Ye Jin Jang
- Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of Korea;
| | - Ashutosh Sharma
- Department of Materials Science and Engineering, Ajou University, 206-Worldcup-ro, Yeongtong-gu, Gyeonggi-do, Suwon 16499, Republic of Korea
| | - Jae Pil Jung
- Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of Korea;
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13
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Kang JH, Shin H, Kim KS, Song MK, Lee D, Meng Y, Choi C, Suh JM, Kim BJ, Kim H, Hoang AT, Park BI, Zhou G, Sundaram S, Vuong P, Shin J, Choe J, Xu Z, Younas R, Kim JS, Han S, Lee S, Kim SO, Kang B, Seo S, Ahn H, Seo S, Reidy K, Park E, Mun S, Park MC, Lee S, Kim HJ, Kum HS, Lin P, Hinkle C, Ougazzaden A, Ahn JH, Kim J, Bae SH. Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions. NATURE MATERIALS 2023:10.1038/s41563-023-01704-z. [PMID: 38012388 DOI: 10.1038/s41563-023-01704-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Accepted: 09/27/2023] [Indexed: 11/29/2023]
Abstract
Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.
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Affiliation(s)
- Ji-Hoon Kang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electronic Engineering, Inha University, Incheon, Republic of Korea
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Ki Seok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Guanyu Zhou
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
| | - Suresh Sundaram
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
- CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France
| | - Phuong Vuong
- CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France
| | - Jiho Shin
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jinyeong Choe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA
| | - Rehan Younas
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sun Ok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA
| | - Beomseok Kang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Seungju Seo
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyojung Ahn
- Future Innovation Research Center, Korea Aerospace Research Institute, Daejeon, Republic of Korea
- Aerospace System Engineering, University of Science and Technology, Daejeon, Republic of Korea
| | - Seunghwan Seo
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Eugene Park
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sungchul Mun
- Department of Industrial Engineering, Jeonju University, Jeonju, Republic of Korea
- Convergence Institute of Human Data Technology, Jeonju University, Jeonju, Republic of Korea
| | - Min-Chul Park
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Suyoun Lee
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Hyung-Jun Kim
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Hyun S Kum
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Peng Lin
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- College of Computer Science and Technology, Zhejiang University, Hangzhou, China
| | - Christopher Hinkle
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
| | - Abdallah Ougazzaden
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
- CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA.
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14
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Wang F, Hu W. All-2D electronics for AI processing. NATURE MATERIALS 2023:10.1038/s41563-023-01720-z. [PMID: 38012389 DOI: 10.1038/s41563-023-01720-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
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15
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Ryu H, Kang J, Park M, Bae B, Zhao Z, Rakheja S, Lee K, Zhu W. Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP 2S 6 and InZnO. ACS APPLIED MATERIALS & INTERFACES 2023; 15:53671-53677. [PMID: 37947841 DOI: 10.1021/acsami.3c10582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on the two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit nonvolatile memory windows of ∼1 V, low off-state drain currents, and high carrier mobilities. The ferroelectric CIPS layer serves a dual purpose by providing electrostatic doping in IZO and acting as a passivation layer for the IZO channel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devices for neural networks. The CIPS/IZO synapse demonstrates a sizable dynamic ratio (125) and maintains stable multilevel states. Neural networks based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNIST handwritten digits. These ferroelectric transistors can be vertically stacked on silicon complementary metal-oxide semiconductor (CMOS) with a low thermal budget, offering broad applications in CMOS+X technologies and energy-efficient 3D neural networks.
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Affiliation(s)
- Hojoon Ryu
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Junzhe Kang
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Minseong Park
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Byungjoon Bae
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zijing Zhao
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Shaloo Rakheja
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Material Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Wenjuan Zhu
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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16
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Lin Q, Gilardi C, Su SK, Zhang Z, Chen E, Bandaru P, Kummel A, Radu I, Mitra S, Pitner G, Wong HSP. Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors. ACS NANO 2023; 17:21083-21092. [PMID: 37910857 DOI: 10.1021/acsnano.3c04346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (IMIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green's function (NEGF) model confirms the dependence of IMIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.
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Affiliation(s)
- Qing Lin
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Carlo Gilardi
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sheng-Kai Su
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
| | - Zichen Zhang
- Dept. of Electrical Engineering, University of California San Diego, San Diego, California 92093, United States
| | - Edward Chen
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
| | - Prabhakar Bandaru
- Dept. of Electrical Engineering, University of California San Diego, San Diego, California 92093, United States
| | - Andrew Kummel
- Dept. of Electrical Engineering, University of California San Diego, San Diego, California 92093, United States
| | - Iuliana Radu
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
| | - Subhasish Mitra
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Greg Pitner
- Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States
| | - H-S Philip Wong
- Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States
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17
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Li Y, Tang J, Gao B, Yao J, Fan A, Yan B, Yang Y, Xi Y, Li Y, Li J, Sun W, Du Y, Liu Z, Zhang Q, Qiu S, Li Q, Qian H, Wu H. Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning. Nat Commun 2023; 14:7140. [PMID: 37932300 PMCID: PMC10628152 DOI: 10.1038/s41467-023-42981-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 10/25/2023] [Indexed: 11/08/2023] Open
Abstract
In this work, we report the monolithic three-dimensional integration (M3D) of hybrid memory architecture based on resistive random-access memory (RRAM), named M3D-LIME. The chip featured three key functional layers: the first was Si complementary metal-oxide-semiconductor (CMOS) for control logic; the second was computing-in-memory (CIM) layer with HfAlOx-based analog RRAM array to implement neural networks for feature extractions; the third was on-chip buffer and ternary content-addressable memory (TCAM) array for template storing and matching, based on Ta2O5-based binary RRAM and carbon nanotube field-effect transistor (CNTFET). Extensive structural analysis along with array-level electrical measurements and functional demonstrations on the CIM and TCAM arrays was performed. The M3D-LIME chip was further used to implement one-shot learning, where ~96% accuracy was achieved on the Omniglot dataset while exhibiting 18.3× higher energy efficiency than graphics processing unit (GPU). This work demonstrates the tremendous potential of M3D-LIME with RRAM-based hybrid memory architecture for future data-centric applications.
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Affiliation(s)
- Yijun Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
| | - Bin Gao
- School of Integrated Circuits, Tsinghua University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Jian Yao
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, China
| | - Anjunyi Fan
- Institute for Artificial Intelligence, Peking University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China
| | - Bonan Yan
- Institute for Artificial Intelligence, Peking University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China
| | - Yuchao Yang
- Institute for Artificial Intelligence, Peking University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China
- School of Electronic and Computer Engineering, Peking University, Shenzhen, China
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, China
| | - Yue Xi
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Yuankun Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Jiaming Li
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Wen Sun
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Yiwei Du
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Zhengwu Liu
- School of Integrated Circuits, Tsinghua University, Beijing, China
| | - Qingtian Zhang
- School of Integrated Circuits, Tsinghua University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, China
| | - Qingwen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, China
| | - He Qian
- School of Integrated Circuits, Tsinghua University, Beijing, China
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Huaqiang Wu
- School of Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
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18
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Roy A, Ta BQ, Azadmehr M, Aasmundtveit KE. Post-CMOS processing challenges and design developments of CMOS-MEMS microheaters for local CNT synthesis. MICROSYSTEMS & NANOENGINEERING 2023; 9:136. [PMID: 37937184 PMCID: PMC10625928 DOI: 10.1038/s41378-023-00598-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 07/31/2023] [Accepted: 08/16/2023] [Indexed: 11/09/2023]
Abstract
Carbon nanotubes (CNTs) can be locally grown on custom-designed CMOS microheaters by a thermal chemical vapour deposition (CVD) process to utilize the sensing capabilities of CNTs in emerging micro- and nanotechnology applications. For such a direct CMOS-CNT integration, a key requirement is the development of necessary post-processing steps on CMOS chips for fabricating CMOS-MEMS polysilicon heaters that can locally generate the required CNT synthesis temperatures (~650-900 °C). In our post-CMOS processing, a subtractive fabrication technique is used for micromachining the polysilicon heaters, where the passivation layers in CMOS are used as masks to protect the electronics. For dielectric etching, it is necessary to achieve high selectivity, uniform etching and a good etch rate to fully expose the polysilicon layers without causing damage. We achieved successful post-CMOS processing by developing two-step reactive ion etching (RIE) of the SiO2 dielectric layer and making design improvements to a second-generation CMOS chip. After the dry etching process, CMOS-MEMS microheaters are partially suspended by SiO2 wet etching with minimum damage to the exposed aluminium layers, to obtain high thermal isolation. The fabricated microheaters are then successfully utilized for synthesizing CNTs by a local thermal CVD process. The CMOS post-processing challenges and design aspects to fabricate CMOS-MEMS polysilicon microheaters for such high-temperature applications are detailed in this article. Our developed process for heterogeneous monolithic integration of CMOS-CNT shows promise for wafer-level manufacturing of CNT-based sensors by incorporating additional steps in an already existing foundry CMOS process.
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Affiliation(s)
- Avisek Roy
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
| | - Bao Q. Ta
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
| | - Mehdi Azadmehr
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
| | - Knut E. Aasmundtveit
- Department of Microsystems, University of South-Eastern Norway, 3184 Horten, Norway
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19
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Chen Y, Zhao M, Ouyang Y, Zhang S, Liu Z, Wang K, Zhang Z, Liu Y, Yang C, Sun W, Shen J, Zhu Z. Biotemplated precise assembly approach toward ultra-scaled high-performance electronics. Nat Protoc 2023; 18:2975-2997. [PMID: 37670036 DOI: 10.1038/s41596-023-00870-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Accepted: 06/08/2023] [Indexed: 09/07/2023]
Abstract
Structural DNA nanotechnology can be programmed into complex designer structures with molecular precision for directing a wide range of inorganic and biological materials. However, the use of DNA-templated approaches for the fabrication and performance requirements of ultra-scaled semiconductor electronics is limited by its assembly disorder and destructive interface composition. In this protocol, using carbon nanotubes (CNTs) as model semiconductors, we provide a stepwise process to build ultra-scaled, high-performance field-effect transistors (FETs) from micron-scale three-dimensional DNA templates. We apply the approach to assemble CNT arrays with uniform pitches scaled between 24.1 and 10.4 nm with yields of more than 95%, which exceeds the resolution limits of conventional lithography. To achieve highly clean CNT interfaces, we detail a rinsing-after-fixing step to remove residual DNA template and salt contaminations present around the contact and the channel regions, without modifying the alignment of the CNT arrays. The DNA-templated CNT FETs display both high on-state current (4-15 μA per CNT) and small subthreshold swing (60-100 mV per decade), which are superior to previous examples of biotemplated electronics and match the performance metrics of high-performance, silicon-based electronics. The scalable assembly of defect-free three-dimensional DNA templates requires 1 week and the CNT arrays can be synthesized within half a day. The interface engineering requires 1-2 d, while the fabrication of high-performance FET and logic gate circuits requires 2-4 d. The structural and performance characterizations of molecular-precise DNA self-assembly and high-performance electronics requires 1-2 d. The protocol is suited for users with expertise in DNA nanotechnology and semiconductor electronics.
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Affiliation(s)
- Yahong Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China
- Collaborative Innovation Center of Chemistry for Energy Materials, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, State Key Laboratory of Physical Chemistry of Solid Surfaces, Key Laboratory for Chemical Biology of Fujian Province, Department of Chemical Biology, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Mengyu Zhao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yifan Ouyang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China
| | - Suhui Zhang
- Collaborative Innovation Center of Chemistry for Energy Materials, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, State Key Laboratory of Physical Chemistry of Solid Surfaces, Key Laboratory for Chemical Biology of Fujian Province, Department of Chemical Biology, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Zhihan Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China
| | - Kexin Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China
| | - Zhaoxuan Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yingxia Liu
- Department of Systems Engineering, City University of Hong Kong, Hong Kong, China
| | - Chaoyong Yang
- Collaborative Innovation Center of Chemistry for Energy Materials, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, State Key Laboratory of Physical Chemistry of Solid Surfaces, Key Laboratory for Chemical Biology of Fujian Province, Department of Chemical Biology, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Wei Sun
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China.
- Zhangjiang Laboratory, Shanghai, China.
| | - Jie Shen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, School of Materials Science and Engineering, Peking University, Beijing, China.
| | - Zhi Zhu
- Collaborative Innovation Center of Chemistry for Energy Materials, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, State Key Laboratory of Physical Chemistry of Solid Surfaces, Key Laboratory for Chemical Biology of Fujian Province, Department of Chemical Biology, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China.
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20
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Jung G, Kim J, Hong S, Shin H, Jeong Y, Shin W, Kwon D, Choi WY, Lee J. Energy Efficient Artificial Olfactory System with Integrated Sensing and Computing Capabilities for Food Spoilage Detection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302506. [PMID: 37651074 PMCID: PMC10602532 DOI: 10.1002/advs.202302506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Revised: 07/17/2023] [Indexed: 09/01/2023]
Abstract
Artificial olfactory systems (AOSs) that mimic biological olfactory systems are of great interest. However, most existing AOSs suffer from high energy consumption levels and latency issues due to data conversion and transmission. In this work, an energy- and area-efficient AOS based on near-sensor computing is proposed. The AOS efficiently integrates an array of sensing units (merged field effect transistor (FET)-type gas sensors and amplifier circuits) and an AND-type nonvolatile memory (NVM) array. The signals of the sensing units are directly connected to the NVM array and are computed in memory, and the meaningful linear combinations of signals are output as bit line currents. The AOS is designed to detect food spoilage by employing thin zinc oxide films as gas-sensing materials, and it exhibits low detection limits for H2 S and NH3 gases (0.01 ppm), which are high-protein food spoilage markers. As a proof of concept, monitoring the entire spoilage process of chicken tenderloin is demonstrated. The system can continuously track freshness scores and food conditions throughout the spoilage process. The proposed AOS platform is applicable to various applications due to its ability to change the sensing temperature and programmable NVM cells.
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Affiliation(s)
- Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Jaehyeon Kim
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Hunhee Shin
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Yujeong Jeong
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Wonjun Shin
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Dongseok Kwon
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Woo Young Choi
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
| | - Jong‐Ho Lee
- Department of Electrical and Computer Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul08826Republic of Korea
- Ministry of Science and ICTSejong30121Republic of Korea
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21
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Wang W, Li K, Lan J, Shen M, Wang Z, Feng X, Yu H, Chen K, Li J, Zhou F, Lin L, Zhang P, Li Y. CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor. Nat Commun 2023; 14:6079. [PMID: 37770482 PMCID: PMC10539278 DOI: 10.1038/s41467-023-41868-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 09/14/2023] [Indexed: 09/30/2023] Open
Abstract
The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall deposition for novel 3D architecture. An optimized ALD deposited ZnO thin-film transistor achieving a record field-effect and intrinsic mobility (µFE /µo) of 85/140 cm2/V·s is presented here. The ZnO TFT was integrated with HfO2 RRAM in a 1 kbit (32 × 32) 1T1R array, demonstrating functionalities in RRAM switching. In order to co-design for future technology requiring high performance BEOL circuitries implementation, a spice-compatible model of the ZnO TFTs was developed. We then present designs of various ZnO TFT-based inverters, and 5-stage ring oscillators through simulations and experiments with working frequency exceeding 10's of MHz.
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Affiliation(s)
- Wenhui Wang
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Ke Li
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Jun Lan
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Mei Shen
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, 999077, Hong Kong SAR, China
| | - Xuewei Feng
- Shanghai Jiao Tong University, 200240, Shanghai, China
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Kai Chen
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Jiamin Li
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Feichi Zhou
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Longyang Lin
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
| | - Panpan Zhang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, 100876, Beijing, China.
| | - Yida Li
- School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
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22
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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23
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Liu L, Zhang Y, Yan Y. Four levels of in-sensor computing in bionic olfaction: from discrete components to multi-modal integrations. NANOSCALE HORIZONS 2023; 8:1301-1312. [PMID: 37529878 DOI: 10.1039/d3nh00115f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Sensing and computing are two important ways in which humans attempt to perceive and understand the analog world through digital devices. Analog-to-digital converters (ADCs) discretize analog signals while the data bus transmits digital data between the components of a computer. With the increase in sensor nodes and the application of deep neural networks, the energy and time consumption limit the increment of data throughput. In-sensor computing is a computing paradigm that integrates sensing, storage, and processing in one device without ADCs and data transfer. According to the integration degree, herein, we summarize four levels of in-sensor computing in the field of artificial olfactory. In the first level, we show that different functions are conducted by using discrete components. Next, the data conversion and transfer are exempt within the in-memory computing architecture with necessary data encoding. Subsequently, in-sensor computing is integrated into a single device. Finally, multi-modal in-sensor computing is proposed to improve the quality and reliability of the classification results. At the end of this minireview, we provide an outlook on the use of metal nanoparticle devices to achieve such in-sensor computing for bionic olfaction.
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Affiliation(s)
- Lin Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuchun Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
| | - Yong Yan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083, China
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24
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Xie M, Jia Y, Nie C, Liu Z, Tang A, Fan S, Liang X, Jiang L, He Z, Yang R. Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T-4R structure for high-density memory. Nat Commun 2023; 14:5952. [PMID: 37741834 PMCID: PMC10517937 DOI: 10.1038/s41467-023-41736-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2022] [Accepted: 09/12/2023] [Indexed: 09/25/2023] Open
Abstract
Emerging data-intensive computation has driven the advanced packaging and vertical stacking of integrated circuits, for minimized latency and energy consumption. Yet a monolithic three-dimensional (3D) integrated structure with interleaved logic and high-density memory layers has been difficult to achieve due to challenges in managing the thermal budget. Here we experimentally demonstrate a monolithic 3D integration of atomically-thin molybdenum disulfide (MoS2) transistors and 3D vertical resistive random-access memories (VRRAMs), with the MoS2 transistors stacked between the bottom-plane and top-plane VRRAMs. The whole fabrication process is integration-friendly (below 300 °C), and the measurement results confirm that the top-plane fabrication does not affect the bottom-plane devices. The MoS2 transistor can drive each layer of VRRAM into four resistance states. Circuit-level modeling of the monolithic 3D structure demonstrates smaller area, faster data transfer, and lower energy consumption than a planar memory. Such platform holds a high potential for energy-efficient 3D on-chip memory systems.
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Affiliation(s)
- Maosong Xie
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Chen Nie
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Zuheng Liu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Alvin Tang
- Department of Electrical Engineering, Stanford University, Stanford, California, USA
| | - Shiquan Fan
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi, China
| | - Xiaoyao Liang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Li Jiang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
- MoE Key Lab of Artificial Intelligence, Shanghai Jiao Tong University, Shanghai, China
- Shanghai Qi Zhi Institute, Shanghai, China
| | - Zhezhi He
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China.
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shanghai Jiao Tong University, Shanghai, China.
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25
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Gong X, Zhou Y, Xia J, Zhang L, Zhang L, Yin LJ, Hu Y, Qin Z, Tian Y. Tunable non-volatile memories based on 2D InSe/ h-BN/GaSe heterostructures towards potential multifunctionality. NANOSCALE 2023; 15:14448-14457. [PMID: 37615579 DOI: 10.1039/d3nr02995f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Floating-gate memories based on two-dimensional van der Waal (2D vdW) heterostructures play an important role in the development of next-generation information technology. The diversity of 2D vdW materials and their heterostructures provides flexibility in the design of novel storage architectures. However, 2D InSe/h-BN/GaSe heterostructures are rarely reported in the field of tunable non-volatile memories, probably due to the quality limitation of materials and complex interfaces from stackings. Herein, a floating-gate 2D InSe/h-BN/GaSe memory with high performance and atmosphere stability is demonstrated. It exhibits both a large ON/OFF current ratio of ∼105 and a good extinction ratio of ∼103, with an estimated maximum storage capacity of 5.1 × 1012 cm-2. Moreover, the storage performance can be regulated by optimizing the thickness of the insulating h-BN layer. Different device configurations have been explored to validate the working mechanism. Furthermore, a simulation of biological synaptic behavior is achieved on the same prototype device. The enhanced non-volatile characteristics enable the exploration of the integrated 2D memory and potential multifunctionality.
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Affiliation(s)
- Xiang Gong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Yueying Zhou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Yuanyuan Hu
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, China
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26
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Kim KH, Oh S, Fiagbenu MMA, Zheng J, Musavigharavi P, Kumar P, Trainor N, Aljarb A, Wan Y, Kim HM, Katti K, Song S, Kim G, Tang Z, Fu JH, Hakami M, Tung V, Redwing JM, Stach EA, Olsson RH, Jariwala D. Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. NATURE NANOTECHNOLOGY 2023; 18:1044-1050. [PMID: 37217764 DOI: 10.1038/s41565-023-01399-y] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 04/13/2023] [Indexed: 05/24/2023]
Abstract
Three-dimensional monolithic integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrent with enhanced energy efficiency in big data applications such as artificial intelligence. Despite decades of efforts, there remains an urgent need for reliable, compact, fast, energy-efficient and scalable memory devices. Ferroelectric field-effect transistors (FE-FETs) are a promising candidate, but requisite scalability and performance in a back-end-of-line process have proven challenging. Here we present back-end-of-line-compatible FE-FETs using two-dimensional MoS2 channels and AlScN ferroelectric materials, all grown via wafer-scalable processes. A large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios greater than 107 and ON-current density greater than 250 μA um-1, all at ~80 nm channel length are demonstrated. The FE-FETs show stable retention up to 10 years by extension, and endurance greater than 104 cycles in addition to 4-bit pulse-programmable memory features, thereby opening a path towards the three-dimensional heterointegration of a two-dimensional semiconductor memory with silicon complementary metal-oxide-semiconductor logic.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, Ansan, South Korea
| | | | - Jeffrey Zheng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Pariasadat Musavigharavi
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Pawan Kumar
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Nicholas Trainor
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Areej Aljarb
- Department of Physics, King Abdulaziz University, Jeddah, Saudi Arabia
| | - Yi Wan
- Department of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
| | - Hyong Min Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Keshava Katti
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Gwangwoo Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Zichen Tang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Jui-Han Fu
- Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan
| | - Mariam Hakami
- Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan
| | - Vincent Tung
- Department of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
- Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan
| | - Joan M Redwing
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Eric A Stach
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Roy H Olsson
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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27
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Wan T, Shao B, Ma S, Zhou Y, Li Q, Chai Y. In-Sensor Computing: Materials, Devices, and Integration Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203830. [PMID: 35808962 DOI: 10.1002/adma.202203830] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 06/10/2022] [Indexed: 06/15/2023]
Abstract
The number of sensor nodes in the Internet of Things is growing rapidly, leading to a large volume of data generated at sensory terminals. Frequent data transfer between the sensors and computing units causes severe limitations on the system performance in terms of energy efficiency, speed, and security. To efficiently process a substantial amount of sensory data, a novel computation paradigm that can integrate computing functions into sensor networks should be developed. The in-sensor computing paradigm reduces data transfer and also decreases the high computing complexity by processing data locally. Here, the hardware implementation of the in-sensor computing paradigm at the device and array levels is discussed. The physical mechanisms that lead to unique sensory response characteristics and their corresponding computing functions are illustrated. In particular, bioinspired device characteristics enable the implementation of the functionalities of neuromorphic computation. The integration technology is also discussed and the perspective on the future development of in-sensor computing is provided.
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Affiliation(s)
- Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Bangjie Shao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yue Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Qiao Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, China
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28
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Liu AT, Hempel M, Yang JF, Brooks AM, Pervan A, Koman VB, Zhang G, Kozawa D, Yang S, Goldman DI, Miskin MZ, Richa AW, Randall D, Murphey TD, Palacios T, Strano MS. Colloidal robotics. NATURE MATERIALS 2023:10.1038/s41563-023-01589-y. [PMID: 37620646 DOI: 10.1038/s41563-023-01589-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2020] [Accepted: 03/30/2023] [Indexed: 08/26/2023]
Abstract
Robots have components that work together to accomplish a task. Colloids are particles, usually less than 100 µm, that are small enough that they do not settle out of solution. Colloidal robots are particles capable of functions such as sensing, computation, communication, locomotion and energy management that are all controlled by the particle itself. Their design and synthesis is an emerging area of interdisciplinary research drawing from materials science, colloid science, self-assembly, robophysics and control theory. Many colloidal robot systems approach synthetic versions of biological cells in autonomy and may find ultimate utility in bringing these specialized functions to previously inaccessible locations. This Perspective examines the emerging literature and highlights certain design principles and strategies towards the realization of colloidal robots.
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Grants
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- FA9550-15-1-0514 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-1-0233 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
- W911NF-19-10372 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
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Affiliation(s)
- Albert Tianxiang Liu
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI, USA
| | - Marek Hempel
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jing Fan Yang
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Allan M Brooks
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ana Pervan
- Department of Mechanical Engineering, Northwestern University, Evanston, IL, USA
| | - Volodymyr B Koman
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ge Zhang
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Daichi Kozawa
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sungyun Yang
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Daniel I Goldman
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
| | - Marc Z Miskin
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Andréa W Richa
- School of Computing and Augmented Intelligence, Arizona State University, Tempe, AZ, USA
| | - Dana Randall
- School of Computer Science, Georgia Institute of Technology, Atlanta, GA, USA
| | - Todd D Murphey
- Department of Mechanical Engineering, Northwestern University, Evanston, IL, USA
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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29
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He Y, Sohn H, Matsuda O, Su Z. Optical polarization perturbed by shear strains of ultrasonic bulk waves in anisotropic semiconductors: Multiphysics modeling and optoacoustic validation. PHOTOACOUSTICS 2023; 32:100540. [PMID: 37636545 PMCID: PMC10450524 DOI: 10.1016/j.pacs.2023.100540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 08/02/2023] [Accepted: 08/03/2023] [Indexed: 08/29/2023]
Abstract
Characterization of lattice properties of monocrystalline semiconductors (MS) has been rapidly advanced. Of particular interest is the use of shear strains induced by optoacoustic-bulk-waves. However, this technique has been hindered owing to the lack of quantitative correlations between optoacoustic-bulk-waves-induced shear strains and anisotropic photoelasticity of MS. Motivated by this, a multiphysics model is developed to interrogate the coupling phenomena and interaction between optical polarization and shear strains in MS. With the model, perturbation to the polarization of a monochromatic laser beam, upon interacting with optoacoustic waves in MS, is scrutinized quantitatively. Experimental results are in agreement with those from the model, both revealing the polarization perturbed by shear strains quantitatively depends on the crystal orientation and crystal-structure-related symmetry, which are jointly governed by mechanical/photoelastic/optical anisotropies of MS. The approach has paved a new way for selectively acquiring high-sensitivity shear components of optoacoustic-ultrasonic-waves for in situ, high-definition characterization of anisotropic MS.
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Affiliation(s)
- Yi He
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong Special Administrative Region
| | - Hoon Sohn
- Department of Civil and Environmental Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
- Center for 3D Printing Nondestructive Testing, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Osamu Matsuda
- Division of Applied Physics, Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Zhongqing Su
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong Special Administrative Region
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30
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Xiang C, Jin W, Terra O, Dong B, Wang H, Wu L, Guo J, Morin TJ, Hughes E, Peters J, Ji QX, Feshali A, Paniccia M, Vahala KJ, Bowers JE. 3D integration enables ultralow-noise isolator-free lasers in silicon photonics. Nature 2023; 620:78-85. [PMID: 37532812 PMCID: PMC10396957 DOI: 10.1038/s41586-023-06251-w] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Accepted: 05/23/2023] [Indexed: 08/04/2023]
Abstract
Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1-5. However, in optical systems such as microwave synthesizers6, optical gyroscopes7 and atomic clocks8, photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format-that is, on a single chip-for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon.
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Affiliation(s)
- Chao Xiang
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA.
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.
| | - Warren Jin
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
- Anello Photonics, Santa Clara, CA, USA
| | - Osama Terra
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
- Primary Length and Laser Technology Lab, National Institute of Standards, Giza, Egypt
| | - Bozhang Dong
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
| | - Heming Wang
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
| | - Lue Wu
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA
| | - Joel Guo
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
| | - Theodore J Morin
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
| | - Eamonn Hughes
- Materials Department, University of California, Santa Barbara, Santa Barbara, CA, USA
| | - Jonathan Peters
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA
| | - Qing-Xin Ji
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA
| | | | | | - Kerry J Vahala
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA
| | - John E Bowers
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, USA.
- Materials Department, University of California, Santa Barbara, Santa Barbara, CA, USA.
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31
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Qian J, Cheng X, Zhou J, Cao J, Ding L. Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band. ACS NANO 2023. [PMID: 37464538 DOI: 10.1021/acsnano.3c02739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Aligned carbon nanotubes (ACNTs) have been considered as a promising candidate semiconductor with great potential in radiofrequency (RF) electronics due to their high carrier mobility/saturation velocity and small intrinsic capacitance. However, almost all of previously reported works focused on only the cutoff frequency, which is far from enough for practical RF application. In this work, given the speed advantage of ACNTs, we further explore amplitude amplification and frequency conversion capability of ACNTs based RF devices simultaneously, which are two basic functions in RF electronics. Considering there is no de-embedding process for amplification/conversion and reduction power loss, multifinger configuration RF transistors (still having current density around 1 mA/μm) were fabricated with cutoff frequency and maximum oscillation frequency exceeding 150 and 130 GHz, respectively. Based on dedicated ACNTs based RF FETs, we demonstrate almost 7 dB power gain (S21) with over 40 GHz 3-dB bandwidth for amplification and from -12.7 to -17 dB of conversion gain with over 25 dBm IIP3 (input third-order intercept point) of linearity for conversion simultaneously operating at 30 GHz in millimeter wave (mmWave) band both without any tuning instruments and matching technology assistance. The performance achieved here is the best among all the nanomaterials at the mmWave band.
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Affiliation(s)
- Jiale Qian
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
| | - Xiaohan Cheng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Juexian Cao
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
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32
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Sheng Y, Zhang Y, Xing F, Liu C, Di Y, Yang X, Wei S, Zhang X, Liu Y, Gan Z. Co-multiplexing spectral and temporal dimensions based on luminescent materials. OPTICS EXPRESS 2023; 31:24667-24677. [PMID: 37475287 DOI: 10.1364/oe.495972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 06/30/2023] [Indexed: 07/22/2023]
Abstract
Optical multiplexing is a pivotal technique for augmenting the capacity of optical data storage (ODS) and increasing the security of anti-counterfeiting. However, due to the dearth of appropriate storage media, optical multiplexing is generally restricted to a single dimension, thus curtailing the encoding capacity. Herein, the co-multiplexing spectral and temporal dimensions are proposed for optical encoding based on photoluminescence (PL) and persistent-luminescence (PersL) at four different wavelengths. Each emission color comprises four luminescence modes. The further multiplexing of four wavelengths leads to the maximum encoding capacity of 8 bits at each pixel. The wavelength difference between adjacent peaks is larger than 50 nm. The well-separated emission wavelengths significantly lower the requirements for high-resolution spectrometers. Moreover, the information is unable to be decoded until both PL and PersL spectra are collected, suggesting a substantial improvement in information security and the security level of anti-counterfeiting.
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33
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Unno N, Mäkelä T. Thermal Nanoimprint Lithography-A Review of the Process, Mold Fabrication, and Material. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2031. [PMID: 37513042 PMCID: PMC10385880 DOI: 10.3390/nano13142031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 06/30/2023] [Accepted: 07/06/2023] [Indexed: 07/30/2023]
Abstract
Micro- and nanopatterns perform unique functions and have attracted attention in various industrial fields, such as electronic devices, microfluidics, biotechnology, optics, sensors, and smart and anti-adhesion surfaces. To put fine-patterned products to practical use, low-cost patterning technology is necessary. Nanoimprint lithography (NIL) is a promising technique for high-throughput nanopattern fabrication. In particular, thermal nanoimprint lithography (T-NIL) has the advantage of employing flexible materials and eliminating chemicals and solvents. Moreover, T-NIL is particularly suitable for compostable and recyclable materials, especially when applying biobased materials for use in optics and electronics. These attributes make T-NIL an eco-friendly process. However, the processing time of normal T-NIL is longer than that of ultraviolet (UV) NIL using a UV-curable resin because the T-NIL process requires heating and cooling time. Therefore, many studies focus on improving the throughput of T-NIL. Specifically, a T-NIL process based on a roll-to-roll web system shows promise for next-generation nanopatterning techniques because it enables large-area applications with the capability to process webs several meters in width. In this review, the T-NIL process, roll mold fabrication techniques, and various materials are introduced. Moreover, metal pattern transfer techniques using a combination of nanotransfer printing, T-NIL, and a reverse offset are introduced.
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Affiliation(s)
- Noriyuki Unno
- Department of Applied Electronics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585, Japan
| | - Tapio Mäkelä
- VTT Printed and Hybrid Functionalities, Tietotie 3, P.O. Box 1000, FI-02044 VTT Espoo, Finland
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34
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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35
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Fan C, Cheng X, Xie Y, Liu F, Deng X, Zhu M, Gao Y, Xiao M, Zhang Z. Monolithic Three-Dimensional Integration of Carbon Nanotube Circuits and Sensors for Smart Sensing Chips. ACS NANO 2023. [PMID: 37256833 DOI: 10.1021/acsnano.3c03190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Semiconducting carbon nanotube (CNT) film is a promising material for constructing high-performance complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) and highly sensitive field-effect transistor (FET) bio/chemical sensors. Moreover, CNT logic transistors and sensors can be integrated through a compatible low-temperature fabrication process, providing enough thermal budget to construct monolithic three-dimensional (M3D) systems for smart sensors. However, an M3D sensing chip based on CNT film has not yet been demonstrated. In this work, we develop M3D technology to fabricate CNT CMOS ICs and CNT sensor arrays in two different layers; then, we demonstrate a preliminary M3D sensing system comprising CNT CMOS interfacing ICs in the bottom layer and CNT sensors in the upper layer through interlayer vias as links. As a typical example, a highly sensitive hydrogen sensing IC has been demonstrated to perform in situ sensing and processing functions through upper-layer FET-based hydrogen sensors exposed to the environment and bottom-layer CNT CMOS voltage-controlled oscillator (VCO) interfacing circuits. The M3D CNT sensing ICs convert hydrogen concentration information (8-128 ppm) to digital frequency information (0.78-1.11 GHz) with a sensitivity of 2.75 MHz/ppm. M3D sensing technology is expected to provide a universal sensing system for future smart sensing chips, including multitarget detection and ultralow power sensors.
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Affiliation(s)
- Chenwei Fan
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Xiaohan Cheng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yunong Xie
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Fangfang Liu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Xiaosong Deng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Yunfei Gao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, China
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36
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Sheng Z, Dong J, Hu W, Wang Y, Sun H, Zhang DW, Zhou P, Zhang Z. Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor. NANO LETTERS 2023. [PMID: 37235483 DOI: 10.1021/acs.nanolett.3c01248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore's law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due to the controllable polarity by the control gate, floating gate, and drain voltages. Such electrical tunable characteristics are employed for logic-in-memory architectures and can behave as reconfigurable logic functions of AND/XNOR within a single device. Compared to the conventional devices like floating-gate field-effect transistors, our design can greatly decrease the consumption of transistors. For AND/NAND, it can save 75% transistors by reducing the transistor number from 4 to 1; for XNOR/XOR, it is even up to 87.5% with the number being reduced from 8 to 1.
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Affiliation(s)
- Zhe Sheng
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jianguo Dong
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wennan Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yue Wang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haoran Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Peng Zhou
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Zengxing Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
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37
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Zhang Q, Liu C, Zhou P. 2D materials readiness for the transistor performance breakthrough. iScience 2023; 26:106673. [PMID: 37216126 PMCID: PMC10192534 DOI: 10.1016/j.isci.2023.106673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/24/2023] Open
Abstract
As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications.
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Affiliation(s)
- Qing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
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38
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Wang J, Ren Y, Li W, Wu L, Deng Y, Fang X. Intelligent Multifunctional Sensing Systems based on Ordered Macro-Microporous Metal Organic Framework and Its Derivatives. SMALL METHODS 2023:e2201687. [PMID: 37116102 DOI: 10.1002/smtd.202201687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Revised: 03/25/2023] [Indexed: 06/19/2023]
Abstract
Compared with nanomaterials-based sensors with single function, the development of multifunctional sensors shows high potential in comprehensive monitoring of personal health and environment, intelligent human-machine interfaces, and realistic imitation of human skin in prosthetics. Ordered macro-microporous metal-organic frameworks (MOFs)-enabled flexible and stretchable electronics are promising candidates for integrated multifunctional sensing systems. Herein, a three-dimensional ordered macro-microporous zeolite imidazolate framework-8 (3DOM ZIF-8) for humidity sensing and the derived ZnO within a hierarchically ordered macroporous-mesoporous-microporous carbon matrix (ZnO@HOMC) for gas sensor is constructed. Benefit from hierarchically ordered macroporous-mesoporous-microporous structure, the active site is fully exposed, and the charge transfer is accelerated. As a result, the multifunctional sensing systems show ultrafast response and recovery speed (10 s and 34 s), high sensitivity (Rair /Rgas = 38.6@50 ppm) to acetone, rapid humidity response speed (0.23 s) within changing humidity (RH 21%-99%), excellent stability and repeatability. Furthermore, in order to realize real-time monitoring of gas concentrations and humidity on mobile devices, an intelligent and portable sensor module is fabricated and wirelessly connected to a smartphone to effectively detect acetone concentration and humidity. This sensing technology shows fascinating applications in personal health, fitness tracking, electronic skins, artificial nervous systems, and human-machine interactions.
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Affiliation(s)
- Jing Wang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Brain Intelligence Science and Technology, Fudan University, Shanghai, 200433, P. R. China
| | - Yuan Ren
- Department of Chemistry, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan University, Shanghai, 200433, P. R. China
- School of Materials Science and Engineering and Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing, 211189, P. R. China
| | - Wei Li
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Brain Intelligence Science and Technology, Fudan University, Shanghai, 200433, P. R. China
| | - Limin Wu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Brain Intelligence Science and Technology, Fudan University, Shanghai, 200433, P. R. China
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Yonghui Deng
- Department of Chemistry, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Brain Intelligence Science and Technology, Fudan University, Shanghai, 200433, P. R. China
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Zhao H, Yang L, Wu W, Cai X, Yang F, Xiu H, Wang Y, Zhang Q, Xin X, Zhang F, Peng LM, Wang S. Silicon Waveguide-Integrated Carbon Nanotube Photodetector with Low Dark Current and 48 GHz Bandwidth. ACS NANO 2023; 17:7466-7474. [PMID: 37017276 DOI: 10.1021/acsnano.2c12178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Low-dimensional materials with excellent optoelectronic properties and complementary metal-oxide-semiconductor (CMOS) process compatibility have the potential to construct high-performance photodetectors used in a cost-efficient monolithic or hybrid integrated optical communication system. Carbon nanotubes (CNTs) have attracted a lot of attention due to special geometric structure and broad band response, high optical absorption coefficient, ps-level intrinsic light response, high carrier mobility and wafer-scaled production process. Here, we demonstrated a high-performance waveguide-integrated CNT photodetector with asymmetric palladium (Pd) and hafnium (Hf) contact electrodes. The ideal photodetector structure was realized via comparing with simulation and experimental results, where the optimized device achieved a high 3 dB bandwidth ∼48 GHz at 0 V, as well as a responsivity ∼73.62 mA/W and dark current ∼0.157 μA at -2 V bias voltage. This waveguide-integrated CNT photodetector with low dark current and high bandwidth is helpful for next-generation optical communication and high-speed optical interconnects.
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Affiliation(s)
- Hongyan Zhao
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
| | - Leijing Yang
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
| | - Weifeng Wu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
| | - Xiang Cai
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
| | - Fan Yang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
| | - Haojin Xiu
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
| | - Yongjun Wang
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
| | - Qi Zhang
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
| | - Xiangjun Xin
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
- Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
| | - Fan Zhang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
| | - Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
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40
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Wei YC, Mao MH. Three-dimensional inter-layer optical signal transmission realized by a monolithically integrated semiconductor-based carrier transport structure. OPTICS EXPRESS 2023; 31:11820-11828. [PMID: 37155809 DOI: 10.1364/oe.481584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
In this study, we proposed and demonstrated a brand new type of monolithic photonic devices which realizes the three-dimensional (3D) all-optical switching for inter-layer signal transmission. This device is composed of a vertical Si microrod which serves as optical absorption material within a SiN waveguide in one layer and as an index modulation structure within a SiN microdisk resonator lying in the other layer. The ambipolar photo-carrier transport property in the Si microrod was studied by measuring the resonant wavelength shifts under continuous-wave laser pumping. The ambipolar diffusion length can be extracted to be 0.88 µm. Based on the ambipolar photo-carrier transport in a Si microrod through different layers, we presented a fully-integrated all-optical switching operation using this Si microrod and a SiN microdisk with a pump-probe technique through the on-chip SiN waveguides. The switching time windows for the on-resonance operation mode and the off-resonance operation mode can be extracted to be 439 ps and 87 ps, respectively. This device shows potential applications for the future all-optical computing and communication with more practical and flexible configurations in monolithic 3D photonic integrated circuits (3D-PICs).
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41
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Su W, Li X, Li L, Yang D, Wang F, Wei X, Zhou W, Kataura H, Xie S, Liu H. Chirality-dependent electrical transport properties of carbon nanotubes obtained by experimental measurement. Nat Commun 2023; 14:1672. [PMID: 36966164 PMCID: PMC10039901 DOI: 10.1038/s41467-023-37443-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 03/15/2023] [Indexed: 03/27/2023] Open
Abstract
Establishing the relationship between the electrical transport properties of single-wall carbon nanotubes (SWCNTs) and their structures is critical for the design of high-performance SWCNT-based electronic and optoelectronic devices. Here, we systematically investigated the effect of the chiral structures of SWCNTs on their electrical transport properties by measuring the performance of thin-film transistors constructed by eleven distinct (n, m) single-chirality SWCNT films. The results show that, even for SWCNTs with the same diameters but different chiral angles, the difference in the on-state current or carrier mobility could reach an order of magnitude. Further analysis indicates that the electrical transport properties of SWCNTs have strong type and family dependence. With increasing chiral angle for the same-family SWCNTs, Type I SWCNTs exhibit increasing on-state current and mobility, while Type II SWCNTs show the reverse trend. The differences in the electrical properties of the same-family SWCNTs with different chiralities can be attributed to their different electronic band structures, which determine the contact barrier between electrodes and SWCNTs, intrinsic resistance and intertube contact resistance. Our present findings provide an important physical basis for performance optimization and application expansion of SWCNT-based devices.
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Affiliation(s)
- Wei Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiao Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Linhai Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Dehua Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Futian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiaojun Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hiromichi Kataura
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Sishen Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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42
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Cai X, Hong D, Wu W, Han B, Liang X, Wang S. High-Performance Shortwave Infrared Detector Based on Multilayer Carbon Nanotube Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13508-13516. [PMID: 36853991 DOI: 10.1021/acsami.2c21641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Carbon nanotube (CNT) is an ideal candidate material for shortwave infrared (SWIR) detectors due to its large band gap tunability, strong infrared light absorption, and high mobility. Furthermore, the photodetectors based on CNT can be prepared on any substrate using a low-temperature process, which is conducive to three-dimensional (3D) integration. However, owing to the absorption limitation (<2%) of a single-layer network CNT film with low density, the photodetectors of CNT film show low photocurrent responsivity and detectivity. In this paper, we optimize the thickness of the high-purity semiconducting network CNT films to increase the photocurrent responsivity of the photodetectors. When the thickness of network CNT film is about 5 nm, the responsivity of the zero-bias voltage can reach 32 mA/W at 1800 nm wavelength. Then, using stacked CNT films and contact electrode design, the photodetectors exhibit a maximum responsivity of 120 mA/W at 1800 nm wavelength. The photodetectors with stacked CNT films and local n-type channel doping demonstrated a wide response spectral range of 1200-2100 nm, a peak detectivity of 3.94 × 109 Jones at room temperature, and a linear dynamic range over 118 dB. Moreover, the peak detectivity is over 2.27 × 1011 Jones when the temperature is 180 K. Our work demonstrates the potential of the CNT film for future SWIR imaging at a low cost.
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Affiliation(s)
- Xiang Cai
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Delin Hong
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Weifeng Wu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Bing Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
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Qiao Y, Luo J, Cui T, Liu H, Tang H, Zeng Y, Liu C, Li Y, Jian J, Wu J, Tian H, Yang Y, Ren TL, Zhou J. Soft Electronics for Health Monitoring Assisted by Machine Learning. NANO-MICRO LETTERS 2023; 15:66. [PMID: 36918452 PMCID: PMC10014415 DOI: 10.1007/s40820-023-01029-1] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Accepted: 01/05/2023] [Indexed: 06/18/2023]
Abstract
Due to the development of the novel materials, the past two decades have witnessed the rapid advances of soft electronics. The soft electronics have huge potential in the physical sign monitoring and health care. One of the important advantages of soft electronics is forming good interface with skin, which can increase the user scale and improve the signal quality. Therefore, it is easy to build the specific dataset, which is important to improve the performance of machine learning algorithm. At the same time, with the assistance of machine learning algorithm, the soft electronics have become more and more intelligent to realize real-time analysis and diagnosis. The soft electronics and machining learning algorithms complement each other very well. It is indubitable that the soft electronics will bring us to a healthier and more intelligent world in the near future. Therefore, in this review, we will give a careful introduction about the new soft material, physiological signal detected by soft devices, and the soft devices assisted by machine learning algorithm. Some soft materials will be discussed such as two-dimensional material, carbon nanotube, nanowire, nanomesh, and hydrogel. Then, soft sensors will be discussed according to the physiological signal types (pulse, respiration, human motion, intraocular pressure, phonation, etc.). After that, the soft electronics assisted by various algorithms will be reviewed, including some classical algorithms and powerful neural network algorithms. Especially, the soft device assisted by neural network will be introduced carefully. Finally, the outlook, challenge, and conclusion of soft system powered by machine learning algorithm will be discussed.
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Affiliation(s)
- Yancong Qiao
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China.
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
| | - Jinan Luo
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Tianrui Cui
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Haidong Liu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Hao Tang
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Yingfen Zeng
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Chang Liu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Yuanfang Li
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Jinming Jian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jingzhi Wu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yi Yang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Jianhua Zhou
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China.
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
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Li Z, Chiang T, Kuo P, Tu C, Kuo Y, Liu P. Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205481. [PMID: 36658711 PMCID: PMC10037976 DOI: 10.1002/advs.202205481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
In this work, the authors demonstrate a novel vertically-stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p-channel polycrystalline silicon (poly-Si) and n-channel amorphous indium tungsten oxide (a-IWO), with a low footprint than planar structure. The a-IWO TFT with channel thickness of approximately 3-4 atomic layers exhibits high mobility of 24 cm2 V-1 s-1 , near ideally subthreshold swing of 63 mV dec-1 , low leakage current below 10-13 A, high on/off current ratio of larger than 109 , extremely small hysteresis of 0 mV, low contact resistance of 0.44 kΩ-µm, and high stability after encapsulating a passivation layer. The electrical characteristics of n-channel a-IWO TFT are well-matched with p-channel poly-Si TFT for superior complementary metal-oxide-semiconductor technology applications. The inverter can exhibit a high voltage gain of 152 V V-1 at low supply voltage of 1.5 V. The noise margin can be up to 80% of supply voltage and perform the symmetrical window. The pico-watt static power consumption inverter is achieved by the wide energy bandgap of a-IWO channel and atomically-thin channel. The vertically-stacked complementary field-effect transistors (CFET) with high energy-efficiency can increase the circuit density in a chip to conform the development of next-generation semiconductor technology.
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Affiliation(s)
- Zhen‐Hao Li
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Tsung‐Che Chiang
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Po‐Yi Kuo
- Department of Electronic EngineeringNational Chin‐Yi University of TechnologyTaichung411030Taiwan
| | - Chun‐Hao Tu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yue Kuo
- Department of Chemical EngineeringTexas A&M UniversityCollege StationTX77843‐3127USA
| | - Po‐Tsun Liu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
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Matsushita S, Otsuka K, Sugihara T, Zhu G, Kittipaisalsilpa K, Lee M, Xiang R, Chiashi S, Maruyama S. Horizontal Arrays of One-Dimensional van der Waals Heterostructures as Transistor Channels. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10965-10973. [PMID: 36800512 DOI: 10.1021/acsami.2c22964] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The nanotube/dielectric interface plays an essential role in achieving superb switching characteristics of carbon nanotube-based transistors for energy-efficient computation. Formation of van der Waals heterostructures with hexagonal boron nitride nanotubes could be an effective means to reduce interface state density, but the need for isolating nanotubes during the formation of coaxial outer layers has hindered the fabrication of their horizontal arrays. Here, we develop a strategy to create isolated heterostructure arrays using aligned carbon nanotubes grown on a quartz substrate as starting materials. Air-suspended arrays of carbon nanotubes are prepared by a dry transfer technique and then used as templates for the coaxial wrapping of boron nitride nanotubes. We then fabricate the transistors, where boron nitride serves as interfacial layers between carbon nanotube channels and conventional gate dielectrics, showing hysteresis-free characteristics owing to the improved interfaces. We have also gained a deeper understanding of the strain applied on inner carbon nanotubes, as well as the inhomogeneity of the outer coating, by characterizing individual heterostructures over trenches and on a substrate surface. The device fabrication and characterization presented here essentially do not require elaborate electron microscopy, thus paving the way for the practical use of one-dimensional van der Waals heterostructures for nanoelectronics.
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Affiliation(s)
- Satoru Matsushita
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Keigo Otsuka
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Taiki Sugihara
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Guangyao Zhu
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | | | - Minhyeok Lee
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
- State Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical Engineering, Zhejiang University, Hangzhou 310027, China
| | - Shohei Chiashi
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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Tzouvadaki I, Prodromakis T. Large-scale nano-biosensing technologies. FRONTIERS IN NANOTECHNOLOGY 2023. [DOI: 10.3389/fnano.2023.1127363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2023] Open
Abstract
Nanoscale technologies have brought significant advancements to modern diagnostics, enabling unprecedented bio-chemical sensitivities that are key to disease monitoring. At the same time, miniaturized biosensors and their integration across large areas enabled tessellating these into high-density biosensing panels, a key capability for the development of high throughput monitoring: multiple patients as well as multiple analytes per patient. This review provides a critical overview of various nanoscale biosensing technologies and their ability to unlock high testing throughput without compromising detection resilience. We report on the challenges and opportunities each technology presents along this direction and present a detailed analysis on the prospects of both commercially available and emerging biosensing technologies.
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Kim JY, Ju X, Ang KW, Chi D. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook. ACS NANO 2023; 17:1831-1844. [PMID: 36655854 DOI: 10.1021/acsnano.2c10737] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacements for Si, there has also been increasing interest in the monolithic 3D integration of 2DMs on the Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of 2DM properties such as a high current driving capability with low leakage current, nonvolatile switching characteristics, a large surface-to-volume ratio, and a tunable bandgap. However, the realization of both of these scenarios critically depends on the development of manufacturing-viable high-yield 2DM layers transfer from the growth substrate to the Si, since the growth of high-quality 2DM layers often requires a high-temperature growth process on template substrates. Motivated by this, extensive efforts have been made by the 2DM research community to develop various 2DM layer transfer methods, leveraging the van der Waals transfer capability of the layer-structured 2DMs. These efforts have led to a number of successful demonstrations of wafer-scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III-V, Ge, and AlN has also been demonstrated. This review surveys and compares different 2DM transfer methods developed recently, with a focus on large-area 2D TMDC film transfer along with an introduction of 2DM template-assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present an outlook of our envisioned multifunctionalities in 3D integrated electronic systems enabled by monolithic 3D integration of 2DMs and III-V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.
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Affiliation(s)
- Jun-Young Kim
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xin Ju
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Kah-Wee Ang
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
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Zhu S, Sun B, Zhou G, Guo T, Ke C, Chen Y, Yang F, Zhang Y, Shao J, Zhao Y. In-Depth Physical Mechanism Analysis and Wearable Applications of HfO x-Based Flexible Memristors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:5420-5431. [PMID: 36688622 DOI: 10.1021/acsami.2c16569] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Since memristors as an emerging nonlinear electronic component have been considered the most promising candidate for integrating nonvolatile memory and advanced computing technology, the in-depth reveal of the memristive mechanism and the realization of hardware fabrication have facilitated their wide applications in next-generation artificial intelligence. Flexible memristors have shown great promising prospects in wearable electronics and artificial electronic skin (e-skin), but in-depth research on the physical mechanism is still lacking. Here, a flexible memristive device with a Ag/HfOx/Ti/PET crossbar structure was fabricated, and a remarkable analog switching characteristic similar to synaptic behavior was observed. Through detailed data fitting and in-depth physical mechanism analysis, it is confirmed that the analog switching characteristics of the device are mainly caused by carrier tunneling. Furthermore, the memristive properties of the Ag/HfOx/Ag/PET device can be attributed to the conductive filaments formed by the redox reaction of the active metal Ag. Finally, the interfacial barrier is extracted by the Arrhenius diagram and the energy band diagram, which is drawn to clearly demonstrate the conduction mechanism of charge trapping in the device. Therefore, the HfOx-based flexible memristor with analog switching behavior and stable memory performance lays the foundation for cutting-edge applications in wearable electronics and smart e-skin.
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Affiliation(s)
- Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan610031, China
- Superconductivity and New Energy R&D Center, Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu610031, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi710049, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing400715, China
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, OntarioN2L 3G1, Canada
| | - Chuan Ke
- Superconductivity and New Energy R&D Center, Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu610031, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan610031, China
| | - Feng Yang
- Superconductivity and New Energy R&D Center, Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu610031, China
| | - Yong Zhang
- Superconductivity and New Energy R&D Center, Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu610031, China
| | - Jinyou Shao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi710049, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan610031, China
- Superconductivity and New Energy R&D Center, Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian350117, China
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50
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Shan G, Li G, Wang Y, Xing C, Zheng Y, Yang Y. Application and Prospect of Artificial Intelligence Methods in Signal Integrity Prediction and Optimization of Microsystems. MICROMACHINES 2023; 14:344. [PMID: 36838043 PMCID: PMC9958958 DOI: 10.3390/mi14020344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 01/26/2023] [Accepted: 01/26/2023] [Indexed: 06/18/2023]
Abstract
Microsystems are widely used in 5G, the Internet of Things, smart electronic devices and other fields, and signal integrity (SI) determines their performance. Establishing accurate and fast predictive models and intelligent optimization models for SI in microsystems is extremely essential. Recently, neural networks (NNs) and heuristic optimization algorithms have been widely used to predict the SI performance of microsystems. This paper systematically summarizes the neural network methods applied in the prediction of microsystem SI performance, including artificial neural network (ANN), deep neural network (DNN), recurrent neural network (RNN), convolutional neural network (CNN), etc., as well as intelligent algorithms applied in the optimization of microsystem SI, including genetic algorithm (GA), differential evolution (DE), deep partition tree Bayesian optimization (DPTBO), two stage Bayesian optimization (TSBO), etc., and compares and discusses the characteristics and application fields of the current applied methods. The future development prospects are also predicted. Finally, the article is summarized.
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Affiliation(s)
- Guangbao Shan
- School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Guoliang Li
- School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Yuxuan Wang
- School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Chaoyang Xing
- Beijing Institute of Aerospace Control Devices, Beijing 100039, China
| | - Yanwen Zheng
- School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Yintang Yang
- School of Microelectronics, Xidian University, Xi’an 710071, China
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