Whither the oxide interface

Local symmetry-driven interfacial magnetization and electronic states in (ZnO)n/(w-FeO)n superlattices

Superlattices constructed with the wide-band-gap semiconductor ZnO and magnetic oxide FeO, both in the wurtzite structure, have been investigated using spin-polarized first-principles calculations. The structural, electronic and magnetic properties of the (ZnO)n/(w-FeO)n superlattices were studied in great detail. Two different interfaces in the (ZnO)n/(w-FeO)n superlattices were identified and they showed very different magnetic and electronic properties. Local symmetry-driven interfacial magnetization and electronic states can arise from different Fe/Zn distributions at different interfaces or spin ordering of Fe in the superlattice. The local symmetry-driven interfacial magnetization and electronic states, originating either from different Fe/Zn distribution across interfaces I and II, or by spin ordering of Fe in the superlattice, can be identified. It was also found that, in the case of the ferromagnetic phase, the electrons are more delocalized for the majority spin but strongly localized for the minority spin, which resulted in interesting spin-dependent transport properties. Our results will pave the way for designing novel spin-dependent electronic devices through the construction of superlattices from semiconductors and multiferroics.

Stacking textured films on lattice-mismatched transparent conducting oxides via matched Voronoi cell of oxygen sublattice

Transparent conducting oxides are a critical component in modern (opto)electronic devices and solar energy conversion systems, and forming textured functional films on them is highly desirable for property manipulation and performance optimization. However, technologically important materials show varied crystal structures, making it difficult to establish coherent interfaces and consequently the oriented growth of these materials on transparent conducting oxides. Here, taking lattice-mismatched hexagonal α-Fe2O3 and tetragonal fluorine-doped tin oxide as the example, atomic-level investigations reveal that a coherent ordered structure forms at their interface, and via an oxygen-mediated dimensional and chemical-matching manner, that is, matched Voronoi cells of oxygen sublattices, [110]-oriented α-Fe2O3 films develop on fluorine-doped tin oxide. Further measurements of charge transport characteristics and photoelectronic effects highlight the importance and advantages of coherent interfaces and well-defined orientation in textured α-Fe2O3 films. Textured growth of lattice-mismatched oxides, including spinel Co3O4, fluorite CeO2, perovskite BiFeO3 and even halide perovskite Cs2AgBiBr6, on fluorine-doped tin oxide is also achieved, offering new opportunities to develop high-performance transparent-conducting-oxide-supported devices.

Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO₃ is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO₃ . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.

Extended Oxygen Octahedral Tilt Proximity near Oxide Heterostructures

The oxide interfaces between materials with different structural symmetries have been actively studied due to their novel physical properties. However, the investigation of intriguing interfacial phenomena caused by the oxygen octahedral tilt (OOT) proximity effect has not been fully exploited, as there is still no clear understanding of what determines the proximity length and what the underlying control mechanism is. Here, we achieved scalability of the OOT proximity effect in SrRuO₃ (SRO) by epitaxial strain near the SRO/SrTiO₃ heterointerface. We demonstrated that the OOT proximity length scale of SRO is extended from 4 unit cells to 14 unit cells by employing advanced scanning transmission electron microscopy. We also suggest that this variation may originate from changes in phonon dispersions due to electron-phonon coupling in SRO. This study will provide in-depth insights into the structural gradients of correlated systems and facilitate potential device applications.

Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenging by conventional layer-by-layer stacking or self-assembling. Here, the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures is reported. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. This work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as providing a platform for exploring potential applications in neuromorphics, solid-state batteries, and catalysis.

Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe2 Lateral Heterostructure

When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe₂ by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x², indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal-Mott insulator junction and the high tunability of a Mott insulator by strain.

Defect Engineering of Ceria Nanocrystals for Enhanced Catalysis via a High-Entropy Oxide Strategy

Introducing transition-metal components to ceria (CeO₂) is important to tailor the surface redox properties for a broad scope of applications. The emergence of high-entropy oxides (HEOs) has brought transformative opportunities for oxygen defect engineering in ceria yet has been hindered by the difficulty in controllably introducing transition metals to the bulk lattice of ceria. Here, we report the fabrication of ceria-based nanocrystals with surface-confined atomic HEO layers for enhanced catalysis. The increased covalency of the transition-metal-oxygen bonds at the HEO-CeO₂ interface promotes the formation of surface oxygen vacancies, enabling efficient oxygen activation and replenishment for enhanced CO oxidation capabilities. Understanding the structural heterogeneity involving bulk and surface oxygen defects in nanostructured HEOs provides useful insights into rational design of atomically precise metal oxides, whose increased compositional and structural complexities give rise to expanded functionalities.

Kinetic Monte Carlo modeling of oxide thin film growth

In spite of the increasing interest in and application of ultrathin film oxides in commercial devices, the understanding of the mechanisms that control the growth of these films at the atomic scale remains limited and scarce. This limited understanding prevents the rational design of novel solutions based on precise control of the structure and properties of ultrathin films. Such a limited understanding stems in no minor part from the fact that most of the available modeling methods are unable to access and robustly sample the nanosecond to second timescales required to simulate both atomic deposition and surface reorganization at ultrathin films. To contribute to this knowledge gap, here we have combined molecular dynamics and adaptive kinetic Monte Carlo simulations to study the deposition and growth of oxide materials over an extended timescale of up to ∼0.5 ms. In our pilot studies, we have examined the growth of binary oxide thin films on oxide substrates. We have investigated three scenarios: (i) the lattice parameter of both the substrate and thin film are identical, (ii) the lattice parameter of the thin film is smaller than the substrate, and (iii) the lattice parameter is greater than the substrate. Our calculations allow for the diffusion of ions between deposition events and the identification of growth mechanisms in oxide thin films. We make a detailed comparison with previous calculations. Our results are in good agreement with the available experimental results and demonstrate important limitations in former calculations, which fail to sample phase space correctly at the temperatures of interest (typically 300–1000 K) with self-evident limitations for the representative modeling of thin films growth. We believe that the present pilot study and proposed combined methodology open up for extended computational support in the understanding and design of ultrathin film growth conditions tailored to specific applications.

Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial La0.7Sr0.3MnO3(111) Thin Films

La_0.7Sr_0.3MnO₃ (LSMO) is one of the most fascinating strongly correlated oxides in which the spin polarization and magnetic property are sensitive to strain, especially in the (111)-oriented LSMO. In the paper, epitaxial LSMO(111) thin films with different thicknesses were prepared, and they showed continuous dislocation defect arrays with thickness greater than 45 nm. Then, the thick LSMO(111) films were divided into a double-layer structure with two slightly different oriented cells. The LSMO(111) films present a stronger lattice-spin coupling, thus the double-layer structure triggers an obvious magnetic heterogeneity phenomenon (magnetic bi-states) by the way of creating a double-mode ferromagnetic resonance (FMR) spectrum. Therefore, the nanostructures, especially the ordered structure defects, may trigger enriched physical phenomena and offer new forms of spin coupling and device functionality in strain-sensitive strongly correlated oxide systems.

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure

An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO₃. The phonon-drag effect, which is not observed in bulk LaNiO₃, enhances S for thin films compressively strained by LaAlO₃ substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO₃ surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (S_g), and the S_g contribution to the total S occurs over a much wider temperature range up to 220 K. The S_g enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO₃, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO₃ substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.

In situmonitoring of epitaxial ferroelectric thin-film growth

In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structuralin situdiagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generationin situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.

Atomic insight into spin, charge and lattice modulations at SrFeO3-x/SrTiO3 interfaces

Novel phenomena and functionalities at interfaces of oxide heterostructures are currently of great interest in a wide range of applications. At such interfaces, charge, spin, orbital and lattice ordering coexist and correlate closely, contributing to rich functional responses. By using atomically resolved imaging and spectroscopy techniques, we investigated magnetic behaviors and structural modulation at the SrFeO_3-x/SrTiO₃ interface. Fe/Ti element intermixing and oxygen vacancies occurred across a few unit cells at the interface. Furthermore, antiferromagnetic spin ordering of Fe with different valence states in the interface of SrFeO_3-x/SrTiO₃ induced uncompensated magnetic moments. Compared to the SrFeO_3-x/La_0.3Sr_0.7Al_0.65Ta_0.35O₃ heterojunction, the variations of charge and lattice order parameters at the SrFeO_3-x/SrTiO₃ interfaces were also determined by advanced electron microscopy, which provided a good understanding of the physical origin of disparate macroscopic magnetic properties, further investigated by magnetometer measurements and X-ray magnetic circular dichroism (XMCD) spectra. These studies provide comprehensive insight into the interfacial modulation of ferrite oxide, which may be useful for designing future devices in oxide electronics.

Junction and energy band on novel semiconductor-based fuel cells

Fuel cells are highly efficient and green power sources. The typical membrane electrode assembly is necessary for common electrochemical devices. Recent research and development in solid oxide fuel cells have opened up many new opportunities based on the semiconductor or its heterostructure materials. Semiconductor-based fuel cells (SBFCs) realize the fuel cell functionality in a much more straightforward way. This work aims to discuss new strategies and scientific principles of SBFCs by reviewing various novel junction types/interfaces, i.e., bulk and planar p-n junction, Schottky junction, and n-i type interface contact. New designing methodologies of SBFCs from energy band/alignment and built-in electric field (BIEF), which block the internal electronic transport while assisting interfacial superionic transport and subsequently enhance device performance, are comprehensively reviewed. This work highlights the recent advances of SBFCs and provides new methodology and understanding with significant importance for both fundamental and applied R&D on new-generation fuel cell materials and technologies.

Length scales of interfacial coupling between metal and insulator phases in oxides

Controlling phase transitions in transition metal oxides remains a central feature of both technological and fundamental scientific relevance. A well-known example is the metal-insulator transition, which has been shown to be highly controllable. However, the length scale over which these phases can be established is not yet well understood. To gain insight into this issue, we atomically engineered an artificially phase-separated system through fabricating epitaxial superlattices that consist of SmNiO₃ and NdNiO₃, two materials that undergo a metal-to-insulator transition at different temperatures. We demonstrate that the length scale of the interfacial coupling between metal and insulator phases is determined by balancing the energy cost of the boundary between a metal and an insulator and the bulk phase energies. Notably, we show that the length scale of this effect exceeds that of the physical coupling of structural motifs, which introduces a new framework for interface-engineering properties at temperatures against the bulk energetics.

Probing Charge Accumulation at SrMnO3/SrTiO3 Heterointerfaces via Advanced Electron Microscopy and Spectroscopy

The last three decades have seen a growing trend toward studying the interfacial phenomena in complex oxide heterostructures. Of particular concern is the charge distribution at interfaces, which is a crucial factor in controlling the interface transport behavior. However, the study of the charge distribution is very challenging due to its small length scale and the intricate structure and chemistry at interfaces. Furthermore, the underlying origin of the interfacial charge distribution has been rarely studied in-depth and is still poorly understood. Here, by a combination of aberration-corrected scanning transmission electron microscopy (STEM) and spectroscopy techniques, we identify the charge accumulation in the SrMnO₃ (SMO) side of SrMnO₃/SrTiO₃ heterointerfaces and find that the charge density attains the maximum of 0.13 ± 0.07 e^-/unit cell (uc) at the first SMO monolayer. Based on quantitative atomic-scale STEM analyses and first-principle calculations, we explore the origin of interfacial charge accumulation in terms of epitaxial strain-favored oxygen vacancies, cationic interdiffusion, interfacial charge transfer, and space-charge effects. This study, therefore, provides a comprehensive description of the charge distribution and related mechanisms at the SMO/STO heterointerfaces, which is beneficial for the functionality manipulation via charge engineering at interfaces.

Superconductivity in undoped BaFe2As2 by tetrahedral geometry design

Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering. Variations in atomic geometry affect electron hopping between Fe atoms and the Fermi surface topology, influencing magnetic frustration and the pairing strength through changes of orbital overlap and occupancies. Here, we experimentally demonstrate a systematic approach to realize superconductivity without chemical doping in BaFe₂As₂, employing geometric design within an epitaxial heterostructure. We control both tetragonality and orthorhombicity in BaFe₂As₂ through superlattice engineering, which we experimentally find to induce superconductivity when the As-Fe-As bond angle approaches that in a regular tetrahedron. This approach to superlattice design could lead to insights into low-dimensional superconductivity in Fe-based superconductors.

Deep-patterning of complex oxides by focused ion beam with PMMA-assisted hybrid protective layer

Studying novel properties of complex oxides in nanoscale has become a popular research interest. Nanofabrication of complex oxides without damaging its intrinsic structure, however, is still challenging. In this work, we investigated the commonly used focused ion beam (FIB) technique for deep-patterning SrTiO3 (STO) using Cr as a surface protective layer and found that it was insufficient in protecting STO against the damage caused by the FIB beam tail effect. We further developed a new method for effectively deep-patterning STO using FIB. Our approach adopted a hybrid surface layer of Cr and polymethyl methacrylate (PMMA) to protect the STO surface during the FIB milling process against the damage caused by the beam tail. This PMMA-assisted hybrid protective layer can effectively prevent the damage resulting from the energetic ion beam, as verified by high-resolution transmission electron microscopy characterization. It was found that PMMA is not spun off during the FIB process but forms bubbles and likely absorbs the energy from the ion beam during this process. At the same time, a thin Cr layer of this hybrid served as a charge-releasing path and kept the patterning precise. This mechanism is very different from simply using Cr as a scarifying surface layer for ion bombardment.

Epitaxial antiperovskite/perovskite heterostructures for materials design

Engineered heterostructures formed by complex oxide materials are a rich source of emergent phenomena and technological applications. In the quest for new functionality, a vastly unexplored avenue is interfacing oxide perovskites with materials having dissimilar crystallochemical properties. Here, we propose a unique class of heterointerfaces based on nitride antiperovskite and oxide perovskite materials as a previously unidentified direction for materials design. We demonstrate the fabrication of atomically sharp interfaces between nitride antiperovskite Mn₃GaN and oxide perovskites (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ and SrTiO₃. Using atomic-resolution imaging/spectroscopic techniques and first-principles calculations, we determine the atomic-scale structure, composition, and bonding at the interface. The epitaxial antiperovskite/perovskite heterointerface is mediated by a coherent interfacial monolayer that interpolates between the two antistructures. We anticipate our results to be an important step for the development of functional antiperovskite/perovskite heterostructures, combining their unique characteristics such as topological properties for ultralow-power applications.

Interface-induced magnetic polar metal phase in complex oxides

Polar metals are commonly defined as metals with polar structural distortions. Strict symmetry restrictions make them an extremely rare breed as the structural constraints favor insulating over metallic phase. Moreover, no polar metals are known to be magnetic. Here we report on the realization of a magnetic polar metal phase in a BaTiO₃/SrRuO₃/BaTiO₃ heterostructure. Electron microscopy reveals polar lattice distortions in three-unit-cells thick SrRuO₃ between BaTiO₃ layers. Electrical transport and magnetization measurements reveal that this heterostructure possesses a metallic phase with high conductivity and ferromagnetic ordering with high saturation moment. The high conductivity in the SrRuO₃ layer can be attributed to the effect of electrostatic carrier accumulation induced by the BaTiO₃ layers. Density-functional-theory calculations provide insights into the origin of the observed properties of the thin SrRuO₃ film. The present results pave a way to design materials with desired functionalities at oxide interfaces.

Polar metals—metals with polar structural distortions—are known not to be magnetic. Here, the authors demonstrate a magnetic polar metal phase in a BaTiO₃/SrRuO₃/BaTiO₃ heterostructure displaying high conductivity and ferromagnetic ordering with high saturation moment.

Electrolyte-Dependent Oxygen Evolution Reactions in Alkaline Media: Electrical Double Layer and Interfacial Interactions

Traditional understanding of electrocatalytic reactions generally focuses on either covalent interactions between adsorbates and the reaction interface (i.e., electrical double layer, EDL) or electrostatic interactions between electrolyte ions. Here, our work provides valuable insights into interfacial structure and ionic interactions during alkaline oxygen evolution reaction (OER). The importance of inner-sphere OH^- adsorption is demonstrated as the IrO_x activity in 4.0 M KOH is 6.5 times higher than that in 0.1 M KOH. Adding NaNO₃ as a supporting electrolyte, which is found to be inert for long-term stability, complicates the electrocatalytic reaction in a half cell. The nonspecially adsorbed Na⁺ in the outer compact interfacial layer is suggested to form a stronger noncovalent interaction with OH^- through hydrogen bond than adsorbed K⁺, leading to the decrease of interfacial OH^- mobility. This hypothesis highlights the importance of outer-sphere adsorption for the OER, which is generally recognized as a pure inner-sphere process. Meanwhile, based on our experimental observations, the pseudocapacitive behavior of solid-state redox might be more reliable in quantifying active sites for OER than that measured from the conventional EDL charging capacitive process. The interfacial oxygen transport is observed to improve with increasing electrolyte conductivity, ascribing to the increased accessible active sites. The durability results in a liquid alkaline electrolyzer which shows that adding NaNO₃ into KOH solution leads to additional degradation of OER activity and long-term stability. These findings provide an improved understanding of the mechanistic details and structural motifs required for efficient and robust electrocatalysis.

Heteroanionic Materials by Design: Progress Toward Targeted Properties

The burgeoning field of anion engineering in oxide-based compounds aims to tune physical properties by incorporating additional anions of different size, electronegativity, and charge. For example, oxychalcogenides, oxynitrides, oxypnictides, and oxyhalides may display new or enhanced responses not readily predicted from or even absent in the simpler homoanionic (oxide) compounds because of their proximity to the ionocovalent-bonding boundary provided by contrasting polarizabilities of the anions. In addition, multiple anions allow heteroanionic materials to span a more complex atomic structure design palette and interaction space than the homoanionic oxide-only analogs. Here, established atomic and electronic principles for the rational design of properties in heteroanionic materials are contextualized. Also described are synergistic quantum mechanical methods and laboratory experiments guided by these principles to achieve superior properties. Lastly, open challenges in both the synthesis and the understanding and prediction of the electronic, optical, and magnetic properties afforded by anion-engineering principles in heteroanionic materials are reviewed.

Perovskite nickelates as bio-electronic interfaces

Functional interfaces between electronics and biological matter are essential to diverse fields including health sciences and bio-engineering. Here, we report the discovery of spontaneous (no external energy input) hydrogen transfer from biological glucose reactions into SmNiO₃, an archetypal perovskite quantum material. The enzymatic oxidation of glucose is monitored down to ~5 × 10⁻¹⁶ M concentration via hydrogen transfer to the nickelate lattice. The hydrogen atoms donate electrons to the Ni d orbital and induce electron localization through strong electron correlations. By enzyme specific modification, spontaneous transfer of hydrogen from the neurotransmitter dopamine can be monitored in physiological media. We then directly interface an acute mouse brain slice onto the nickelate devices and demonstrate measurement of neurotransmitter release upon electrical stimulation of the striatum region. These results open up avenues for use of emergent physics present in quantum materials in trace detection and conveyance of bio-matter, bio-chemical sciences, and brain-machine interfaces.

Functional materials that act as bio-sensing media when interfaced with complex bio-matter are attractive for health sciences and bio-engineering. Here, the authors report room temperature enzyme-mediated spontaneous hydrogen transfer between a perovskite quantum material and glucose reactions.

Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La_{0.7}Sr_{0.3}MnO_{3}/BaTiO_{3}/La_{0.7}Sr_{0.3}MnO_{3} multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.

Electrolyte-based ionic control of functional oxides

The use of electrolyte gating to electrically control electronic, magnetic and optical properties of materials has seen strong recent growth, driven by the potential of the many devices and applications that such control may enable. Contrary to initial expectations of a purely electrostatic response based on electron or hole doping, electrochemical mechanisms based on the motion of ions are now understood to be common, suggesting promising new electrical control concepts.

Three-dimensional atomic scale electron density reconstruction of octahedral tilt epitaxy in functional perovskites

Octahedral tilts are the most ubiquitous distortions in perovskite-related structures that can dramatically influence ferroelectric, magnetic, and electronic properties; yet the paradigm of tilt epitaxy in thin films is barely explored. Non-destructively characterizing such epitaxy in three-dimensions for low symmetry complex tilt systems composed of light anions is a formidable challenge. Here we demonstrate that the interfacial tilt epitaxy can transform ultrathin calcium titanate, a non-polar earth-abundant mineral, into high-temperature polar oxides that last above 900 K. The comprehensive picture of octahedral tilts and polar distortions is revealed by reconstructing the three-dimensional electron density maps across film-substrate interfaces with atomic resolution using coherent Bragg rod analysis. The results are complemented with aberration-corrected transmission electron microscopy, film superstructure reflections, and are in excellent agreement with density functional theory. The study could serve as a broader template for non-destructive, three-dimensional atomic resolution probing of complex low symmetry functional interfaces.

In complex oxides, oxygen octahedra are major structural motifs and their tilts sensitively determine the material’s physical properties. Exploiting Coherent Bragg Rod Analysis enables 3D mapping of complex tilt patterns and reveals the means to control polarization through them in CaTiO₃ thin films.

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.

Selective Growth of Interface Layers from Reactions of Sc(MeCp)2(Me2pz) with Oxide Substrates

The transformation of an oxide substrate by its reaction with a chemical precursor during atomic layer deposition (ALD) has not attracted much attention, as films are typically deposited on top of the oxide substrate. However, any modification to the substrate surface can impact the electrical and optical properties of the device. We demonstrate herein the ability of a precursor to react deep within an oxide substrate to form an interfacial layer that is distinct from both the substrate and deposited film. This phenomenon is studied using a scandium precursor, Sc(MeCp)₂(Me₂pz) (1, MeCp = methylcyclopentadienyl, Me₂pz = 3,5-dimethylpyrazolate), and five oxide substrates (SiO₂, ZnO, Al₂O₃, TiO₂, and HfO₂). In situ Fourier transform infrared (FTIR) spectroscopy shows that at moderate temperatures (∼150 °C) the pyrazolate group of 1 reacts with the surface hydroxyl groups of OH-terminated SiO₂ substrates. However, at slightly higher temperatures (≥225 °C) typically used for the ALD of Sc₂O₃, there is a direct reaction between 1 and the SiO₂ layer, in addition to chemisorption at the surface hydroxyl groups. This reaction is sustained by sequential exposures of 1 until an ∼2 nm thick passivating interface layer is formed, indicating that 1 reacts with oxygen derived from SiO₂. A shift of the Si 2p core level position, measured by ex situ X-ray photoelectron spectroscopy, is consistent with the formation of a ScSi _xO _y layer. Similar observations are made following the exposure of a ZnO substrate to 1 at 275 °C. In contrast, Al₂O₃, TiO₂, and HfO₂ substrates remain resistant to reaction with 1 under similar conditions, except for a surface reaction occurring in the case of TiO₂. These striking observations are attributed to the differences in the electrochemical potentials of the elements comprising the oxide substrates to that of scandium. Precursor 1 can react with SiO₂ or ZnO substrates, since the constituent elements of these oxides have less-negative electrochemical potentials than do aluminum, titanium, and hafnium. Additionally, Sc₂O₃ and surface carbonates are deposited on all substrates by gas-phase reactions between 1 and residual water vapor in the reactor. The extent of gas-phase reactions contributing to film growth is governed by the relative pressure of water vapor in the presence of 1. These results suggest caution when using very reactive, oxophilic precursors such as 1 to avoid misinterpreting unconventional film deposition as that resulting from a standard ALD process.

Enhanced Field Modulation Sensitivity and Anomalous Polarity-Dependency Emerged in Spatial-Confined Manganite Strips

An anomalous polarity-dependent electrostatic field modulation effect, facilitated by spatial confinement, is found in an oxide-based field-effect prototype device with a spatial-confined Pr_0.7(Ca_0.6Sr_0.4)_0.3MnO₃ channel. It is revealed that the dominant field modulation mode under a small bias field varies from a polarity-independent strain-mediated one to a nonvolatile polarity-dependent one with enhanced modulation sensitivity as the channel width narrows down to several micrometers. Specially, in the structure confined to length scales similar to that of the phase domains, the field modulation exhibits a greatly increased modulation amplitude around the transition temperature and an anomalous bias-polarity dependence that is diametrically opposite to the normal one observed in regular polarization field-effect. Further simulations show that a large in-plane polarization field is unexpectedly induced by a small out-of-plane bias field of 4 kV/cm in the narrow strip (up to 790 kV/cm for the 3 μm strip). Such large in-plane polarization field, facilitated and enhanced by size reduction, drives phase transitions in the narrow channel film, leading to the reconfiguration of percolation channel and nonvolatile modulation of transport properties. Accordingly, the accompanied polarity relationship between the induced in-plane polarization field and the applied vertical bias field well explains the observed anomalous polarity-dependence of the modulation. Our studies reveal a new acting channel in the nanoscale control of lateral configurations of electronic phase separation and macroscopic behaviors by a small vertical electric bias field in spatial-confined field-effect structures. This distinct acting mechanism offers new possibilities for designing low-power all-oxide-based electronic devices and exploiting new types of multifunctionality to other strongly correlated materials where electronic phase competition exists.

Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Creating oxide interfaces with precise chemical specificity at the atomic layer level is desired for the engineering of quantum phases and electronic applications, but highly challenging, owing partially to the lack of in situ tools to monitor the chemical composition and completeness of the surface layer during growth. Here we report the in situ observation of atomic layer-by-layer inner potential variations by analysing the Kikuchi lines during epitaxial growth of strontium titanate, providing a powerful real-time technique to monitor and control the chemical composition during growth. A model combining the effects of mean inner potential and step edge density (roughness) reveals the underlying mechanism of the complex and previously not well-understood reflection high-energy electron diffraction oscillations observed in the shuttered growth of oxide films. General rules are proposed to guide the synthesis of atomically and chemically sharp oxide interfaces, opening up vast opportunities for the exploration of intriguing quantum phenomena at oxide interfaces.

Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate perovskite films by analysing the Kikuchi lines.

Largely Enhanced Mobility in Trilayered LaAlO3/SrTiO3/LaAlO3 Heterostructures

LaAlO₃ (LAO)/SrTiO₃ (STO)/LaAlO₃ (LAO) heterostructures were epitaxially deposited on TiO₂-terminated (100) SrTiO₃ single-crystal substrates by laser molecular beam epitaxy. The electron Hall mobility of 1.2 × 10⁴ cm²/V s at 2 K was obtained in our trilayered heterostructures grown under 1 × 10^-5 Torr, which was significantly higher than that in single-layer 5 unit cells LAO (∼4 × 10³ cm²/V s) epitaxially grown on (100) STO substrates under the same conditions. It is believed that the enhancement of dielectric permittivity in the polar insulating trilayer can screen the electric field, thus reducing the carrier effective mass of the two-dimensional electron gas formed at the TiO₂ interfacial layer in the substrate, resulting in a largely enhanced mobility, as suggested by the first-principle calculation. Our results will pave the way for designing high-mobility oxide nanoelectronic devices based on LAO/STO heterostructures.

Nanoarchitectonics in dielectric/ferroelectric layered perovskites: from bulk 3D systems to 2D nanosheets

We present an overview of recent investigations on the dielectric/ferroelectric properties of Dion-Jacobson-type perovskites, including bulk 3D layered systems and their exfoliated 2D nanosheets. In contrast to the Ruddlesden-Popper and Aurivillius phases, the Dion-Jacobson phases in bulk 3D systems have not been important targets for constructing dielectric/ferroelectric materials. However, recent investigations on Dion-Jacobson phases have provided new impetus to dielectric/ferroelectric materials. Dion-Jacobson perovskites can also facilitate delamination into 2D nanosheets. Layer-by-layer engineering of 2D perovskite nanosheets has a great potential for the rational design of new high-k dielectric/ferroelectric materials and nanodevices.

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O3/LaAlO3/SrTiO3 Heterostructures

Interfacial fine structures of bare LaAlO₃/SrTiO₃ (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr_0.1,Ti_0.9)O₃ (PZT_up) or downward-polarized Pb(Zr_0.5,Ti_0.5)O₃ (PZT_down) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti⁴⁺ to Ti³⁺ and ionic displacements at the interface of bare LAO/STO and PZT_down/LAO/STO heterostructure unit cell by unit cell. No evidence of Ti³⁺ is observed at the interface of the PZT_up/LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT_down or PZT_up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.

First-principles studies of polar perovskite KTaO3 surfaces: structural reconstruction, charge compensation, and stability diagram

First-principles calculations predict a surface phase stability diagram for the polar perovskite KTaO₃.

Effect of lattice strain on the electro-catalytic activity of IrO2 for water splitting

Lattice strain control of the OER activity of IrO₂.

Rational Manipulation of IrO2 Lattice Strain on α-MnO2 Nanorods as a Highly Efficient Water-Splitting Catalyst

Developing more efficient and stable oxygen evolution reaction (OER) catalysts is critical for future energy conversion and storage technologies. We demonstrate that inducing a lattice strain in IrO₂ crystal structure due to interface lattice mismatch enables an enhancement of the OER catalytic activity. The lattice strain is obtained by the direct growth of IrO₂ nanoparticles on a specially exposed surface of α-MnO₂ nanorods via a simple two-step hydrothermal synthesis. Interestingly, the prepared hydride OER activity increases with a lower IrO₂ grown mass, which offers an opportunity to reduce the usage of precious iridium and ultimately obtains a specific mass activity of 3.7 times than that of IrO₂ prepared under the same conditions and exhibits equivalent stability. The lattice mismatch in the underlying interface induces the formation of lattice strain in IrO₂ rather than the charge transfer between the materials. The lattice strain changes are in good agreement with the order of the OER activity. Our experimental results indicate that using the special exposed surface substrates or tuning the supporting morphology structure can manipulate the catalyst materials lattice strain for the design of more efficient OER catalysts.

Structural "δ Doping" to Control Local Magnetization in Isovalent Oxide Heterostructures

Modulation and δ-doping strategies, in which atomically thin layers of charged dopants are precisely deposited within a heterostructure, have played enabling roles in the discovery of new physical behavior in electronic materials. Here, we demonstrate a purely structural "δ-doping" strategy in complex oxide heterostructures, in which atomically thin manganite layers are inserted into an isovalent manganite host, thereby modifying the local rotations of corner-connected MnO_{6} octahedra. Combining scanning transmission electron microscopy, polarized neutron reflectometry, and density functional theory, we reveal how local magnetic exchange interactions are enhanced within the spatially confined regions of suppressed octahedral rotations. The combined experimental and theoretical results illustrate the potential to utilize noncharge-based approaches to "doping" in order to enhance or suppress functional properties within spatially confined regions of oxide heterostructures.

Site-selective spectroscopy with depth resolution using resonant x-ray reflectometry

Combining dissimilar transition metal oxides (TMOs) into artificial heterostructures enables to create electronic interface systems with new electronic properties that do not exist in bulk. A detailed understanding of how such interfaces can be used to tailor physical properties requires characterization techniques capable to yield interface sensitive spectroscopic information with monolayer resolution. In this regard resonant x-ray reflectivity (RXR) provides a unique experimental tool to achieve exactly this. It yields the element specific electronic depth profiles in a non-destructive manner. Here, using a YBa₂Cu₃O_7−δ (YBCO) thin film, we demonstrate that RXR is further capable to deliver site selectivity. By applying a new analysis scheme to RXR, which takes the atomic structure of the material into account, together with information of the local charge anisotropy of the resonant ions, we obtained spectroscopic information from the different Cu sites (e.g., chain and plane) throughout the film profile. While most of the film behaves bulk-like, we observe that the Cu-chains at the surface show characteristics of electron doping, whereas the Cu-planes closest to the surface exhibit an orbital reconstruction similar to that observed at La_1−xCa_xMnO₃/YBCO interfaces.

Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO₃/BaTiO₃/SrRuO₃ (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO₂ or TiO₂-SrO) with oxygen partial pressure (P_O2) during PLD. We found that a uniform SrO-TiO₂ termination sequence at the SRO/BTO interface can be achieved by lowering the P_O2 to 5 mTorr, regardless of the total background gas pressure (P_total), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO₃ (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 10³ but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.

Interface Control of Ferroelectricity in an SrRuO3 /BaTiO3 /SrRuO3 Capacitor and its Critical Thickness

The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO₃ /BaTiO₃ /SrRuO₃ (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high PO2 (around 150 mTorr), usually exhibits a mixture of RuO₂ -BaO and SrO-TiO₂ terminations. By reducing PO2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO₂ termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.

Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics

We investigate the effect of electric field on VO₂ back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 10² in VO₂ at a positive gate bias of 80 V (1.6 MV/cm). VO₂ FET devices are prepared on SiO₂ substrates of different thicknesses (100-300 nm) and hybrid dielectric layers of Al₂O₃/SiO₂ (500 nm). For thicknesses less than 300 nm, no electric-field effects are observed, whereas for a 300 nm thickness, a small decrease in resistance is observed under a 0.2 MV/cm electric field. Under the electrostatic effect, the carrier concentration increases in VO₂ devices, decreasing the resistance and the transition temperature from 66.75 to 64 °C. The leakage analysis shows that the interface quality of VO₂ films on hybrid dielectric layers can be further improved. These studies suggest a multilevel fast resistance switching with the electric field and give an insight into the gate-source leakage current, which limits the phase transition in VO₂ in an electric field.

Atomically modified thin interface in metal-dielectric hetero-integrated systems: control of electronic properties

We have performed first-principles studies of the electronic properties of Cu-diamond hetero-integrated systems, particularly placing emphasis on elucidating the effects of surface modification of diamond with H or O. It is found that the electronic properties crucially depend on the chemical compositions of the modified atomically thin interface region. The local density of states (LDOS) of the H-terminated diamond moiety near the Cu surface exhibits a clearly different distribution from that near the vacuum region, whereas the LDOS of the O-terminated diamond is almost independent of the Cu deposition. In other words, the effects of the electronic interactions between Cu and diamond on the electronic properties in the interface region are readily controlled by surface modification with only one atomic (i.e. H or O) layer. Electric field (EF) effects on the Cu-diamond systems also strongly depend on the electronic details, i.e. atomistic modification in the interface regions. In particular, at the interface between the H-terminated diamond moiety and the vacuum region, its conduction band energy is strongly affected by an applied EF much more than the valence band energy; that is, the band gap can be varied with an applied EF. The band gap variation is found to be attributed to an atomistic level difference in the spatial extension of the valence and conduction bands and thus is not explained with a macroscopic band diagram model. It has been demonstrated that the electronic properties of hetero-integrated systems are described and controlled well by carefully designing atomically thin interface regions.

Interface-Induced Phenomena in Magnetism

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

Comparison Studies of Interfacial Electronic and Energetic Properties of LaAlO3/TiO2 and TiO2/LaAlO3 Heterostructures from First-Principles Calculations

By using first-principles electronic structure calculations, we studied electronic and energetic properties of perovskite oxide heterostructures with different epitaxial growth order between anatase TiO₂ and LaAlO₃. Two types of heterostructures, i.e., TiO₂ film grown on LaAlO₃ substrate (TiO₂/LaAlO₃) and LaAlO₃ film grown on TiO₂ substrate (LaAlO₃/TiO₂), were modeled. The TiO₂/LaAlO₃ model is intrinsically metallic and thus does not exhibit an insulator-to-metal transition as TiO₂ film thickness increases; in contrast, the LaAlO₃/TiO₂ model shows an insulator-to-metal transition as the LaAlO₃ film thickness increases up to 4 unit cells. The former model has a larger interfacial charge carrier density (n ∼ 10¹⁴ cm^-2) and smaller electron effective mass (0.47m_e) than the later one (n ∼ 10¹³ cm^-2, and 0.70m_e). The interfacial energetics calculations indicate that the TiO₂/LaAlO₃ model is energetically more favorable than the LaAlO₃/TiO₂ model, and the former has a stronger interface cohesion than the later model. This research provides fundamental insights into the different interfacial electronic and energetic properties of TiO₂/LaAlO₃ and LaAlO₃/TiO₂ heterostructures.

Multiple Supersonic Phase Fronts Launched at a Complex-Oxide Heterointerface

Selective optical excitation of a substrate lattice can drive phase changes across heterointerfaces. This phenomenon is a nonequilibrium analogue of static strain control in heterostructures and may lead to new applications in optically controlled phase change devices. Here, we make use of time-resolved nonresonant and resonant x-ray diffraction to clarify the underlying physics and to separate different microscopic degrees of freedom in space and time. We measure the dynamics of the lattice and that of the charge disproportionation in NdNiO_{3}, when an insulator-metal transition is driven by coherent lattice distortions in the LaAlO_{3} substrate. We find that charge redistribution propagates at supersonic speeds from the interface into the NdNiO_{3} film, followed by a sonic lattice wave. When combined with measurements of magnetic disordering and of the metal-insulator transition, these results establish a hierarchy of events for ultrafast control at complex-oxide heterointerfaces.

Interfacial defects induced electronic property transformation at perovskite SrVO3/SrTiO3 and LaCrO3/SrTiO3 heterointerfaces

Unravelling the atomic structure and chemical species of interfacial defects is critical to understanding the origin of interfacial properties in many heterojunctions.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

For epitaxial films, a critical thickness (t_c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t_c in BiFeO₃ thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO₃/SrRuO₃/SrTiO₃ substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO₃ film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.