Room-temperature antiferromagnetic memory resistor

Magnetic parity violation and parity-time-reversal-symmetric magnets

Parity-time-reversal symmetry (PTsymmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T), is a fundamental concept of physics and characterizes the functionality of materials as well asPandTsymmetries. In particular, thePT-symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leavesPTsymmetry intact, the simultaneous violation ofPandTsymmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagneticP-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion.

Ultra-high spin emission from antiferromagnetic FeRh

An antiferromagnet emits spin currents when time-reversal symmetry is broken. This is typically achieved by applying an external magnetic field below and above the spin-flop transition or by optical pumping. In this work we apply optical pump-THz emission spectroscopy to study picosecond spin pumping from metallic FeRh as a function of temperature. Intriguingly we find that in the low-temperature antiferromagnetic phase the laser pulse induces a large and coherent spin pumping, while not crossing into the ferromagnetic phase. With temperature and magnetic field dependent measurements combined with atomistic spin dynamics simulations we show that the antiferromagnetic spin-lattice is destabilised by the combined action of optical pumping and picosecond spin-biasing by the conduction electron population, which results in spin accumulation. We propose that the amplitude of the effect is inherent to the nature of FeRh, particularly the Rh atoms and their high spin susceptibility. We believe that the principles shown here could be used to produce more effective spin current emitters. Our results also corroborate the work of others showing that the magnetic phase transition begins on a very fast picosecond timescale, but this timescale is often hidden by measurements which are confounded by the slower domain dynamics.

An antiferromagnetic spin phase change memory

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.

Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain

Achieving effective manipulation of perpendicular exchange bias effect remains an intricate endeavor, yet it stands a significance for the evolution of ultra-high capacity and energy-efficient magnetic memory and logic devices. A persistent impediment to its practical applications is the reliance on external magnetic fields during the current-induced switching of exchange bias in perpendicularly magnetized structures. This study elucidates the achievement of a full electrical manipulation of the perpendicular exchange bias in the multilayers with an ultrathin antiferromagnetic layer. Owing to the anisotropic epitaxial strain in the 2-nm-thick IrMn3 layer, the considerable exchange bias effect is clearly achieved at room temperature. Concomitantly, a specific global uncompensated magnetization manifests in the IrMn3 layer, facilitating the switching of the irreversible portion of the uncompensated magnetization. Consequently, the perpendicular exchange bias can be manipulated by only applying pulsed current, notably independent of the presence of any external magnetic fields.

Acoustic Wave-Induced FeRh Magnetic Phase Transition and Its Application in Antiferromagnetic Pattern Writing and Erasing

We explore the FeRh magnetic phase transition (MPT) and magnetic phase domain (MPD) with the introduction of surface acoustic waves (SAWs). The effects of the SAW pulses with different pulse widths and powers on resistance-temperature loops are investigated, revealing that the SAW can reduce the thermal hysteresis. Meanwhile, the SAW-induced comb-like antiferromagnetic (AFM) phase domains are observed. By changing the pulse width and SAW frequency, we further realize a writing-erasing process of the different comb-like AFM phase domains in the mixed-phase regime of the cooling transition branch. Resistance measurements also display the repeated SAW writing-erasing and the nonvolatile characteristic clearly. MPT paths are measured to demonstrate that short SAW pulses induce isothermal MPT and write magnetic phase patterns via the dynamic strain, whereas long SAW pulses erase patterns via the acoustothermal effect. The Preisach model is introduced to model the FeRh MPT under the SAW pulses, and the calculated results correspond well with our experiments, which reveals the SAW-induced energy modulation promotes FeRh MPT. COMSOL simulations of the SAW strain field also support our results. Our study not only can be used to reduce the thermal hysteresis but also extends the application of the SAW as a tool to write and erase AFM patterns for spintronics and magnonics.

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

Emerging Antiferromagnets for Spintronics

Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.

Changing the spin disorder of two-dimensional magnetic Cr2TiC2Tx to long-range order through noble metal adhesion

To enhance the use of Cr2TiC2Tx MXene in spin electronics, it is essential to transform its spin-disordered state into a long-range ordered spin state. In this study, first-principles calculations show that Rh layers adhered to the Cr2TiC2Tx surfaces can transform its spin disordered state into a long-range spin order by donating electrons to the O terminations, resulting in Cr2TiC2Tx becoming a single-layer A-type antiferromagnet. As the proportion of F termination increases from 0 to 100%, the exchange coupling constant J1 of the compound escalates from 0.5 to 15.9 meV. Concurrently, the Néel temperature experiences a significant rise from 8 K to 110 K. The analysis of the density of states reveals that the obtained Cr2TiC2Tx exhibits excellent conductivity with O termination and semiconductor characteristics with F termination. These unique features make Cr2TiC2Tx a promising magnetic material for application in spin electronics.

Chiral Induced Spin Selectivity

Since the initial landmark study on the chiral induced spin selectivity (CISS) effect in 1999, considerable experimental and theoretical efforts have been made to understand the physical underpinnings and mechanistic features of this interesting phenomenon. As first formulated, the CISS effect refers to the innate ability of chiral materials to act as spin filters for electron transport; however, more recent experiments demonstrate that displacement currents arising from charge polarization of chiral molecules lead to spin polarization without the need for net charge flow. With its identification of a fundamental connection between chiral symmetry and electron spin in molecules and materials, CISS promises profound and ubiquitous implications for existing technologies and new approaches to answering age old questions, such as the homochiral nature of life. This review begins with a discussion of the different methods for measuring CISS and then provides a comprehensive overview of molecules and materials known to exhibit CISS-based phenomena before proceeding to identify structure-property relations and to delineate the leading theoretical models for the CISS effect. Next, it identifies some implications of CISS in physics, chemistry, and biology. The discussion ends with a critical assessment of the CISS field and some comments on its future outlook.

Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet

Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpected, off-diagonal components of the resistivity tensor occur at low temperatures indicating subtle transitions between magnetic phases of different symmetry. This is supported by neutron scattering and explained within a phenomenological model which suggests that the phase transitions in magnetic field are associated with field induced topological orbital momenta. The fact that we observe transitions between spin phases in a polycrystal, where effects of crystalline anisotropy are cancelled suggests that they are only controlled by exchange interactions. The observation of an off-diagonal resistivity extends the possibilities for realising antiferromagnetic spintronics with polycrystalline materials.

Electrical 180° switching of Néel vector in spin-splitting antiferromagnet

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1." However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet Mn5Si3. Such a 180° switching is read out by the Néel vector-induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

Ultrafast Switching of Interfacial Thermal Conductance

Dynamical control of thermal transport at the nanoscale provides a time-domain strategy for optimizing thermal management in nanoelectronics, magnetic devices, and thermoelectric devices. However, the rate of change available for thermal switches and regulators is limited to millisecond time scales, calling for a faster modulation speed. Here, time-resolved X-ray diffraction measurements and thermal transport modeling reveal an ultrafast modulation of the interfacial thermal conductance of an FeRh/MgO heterostructure as a result of a structural phase transition driven by optical excitation. Within 90 ps after optical excitation, the interfacial thermal conductance is reduced by a factor of 5 and lasts for a few nanoseconds, in comparison to the value at the equilibrium FeRh/MgO interface. The experimental results combined with thermal transport calculations suggest that the reduced interfacial thermal conductance results from enhanced phonon scattering at the interface where the lattice experiences transient in-plane biaxial stress due to the structural phase transition of FeRh. Our results suggest that optically driven phase transitions can be utilized for ultrafast nanoscale thermal switches for device application.

Anisotropic magnetoresistance: materials, models and applications

Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetization: R ∥ for magnetization parallel to the electric current direction is different from R⊥ for magnetization perpendicular to the electric current direction. In this review, this century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been identified and studied in antiferromagnets. To date, sensors based on the anisotropic magnetoresistance (AMR) effect are widely used in different fields, such as the automotive industry, aerospace or in biomedical imaging.

Robust Antiferromagnetic FeRh Films on Mica

FeRh shows an antiferromagnetic to ferromagnetic phase transition above room temperature, which permits its use as an antiferromagnetic memory element. However, its antiferromagnetic order is sensitive to small variations in crystallinity and composition, challenging its integration into flexible devices. Here, we show that flexible FeRh films of high crystalline quality can be synthesized by using mica as a substrate, followed by a mechanical exfoliation of the mica. The magnetic and transport data indicate that the FeRh films display a sharp antiferromagnetic to ferromagnetic phase transition. Magnetotransport data allow for the observation of two distinguishable resistance states, which are written after a field-cooling procedure. It is shown that the memory states are robust under the application of magnetic fields of up to 10 kOe.

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Spin obit torque (SOT) driven magnetization switching has been used widely for encoding consumption-efficient memory and logic. However, symmetry breaking under a magnetic field is required to realize the deterministic switching in synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA), which limits their potential applications. Herein, we report all electric-controlled magnetization switching in the antiferromagnetic Co/Ir/Co trilayers with vertical magnetic imbalance. Besides, the switching polarity could be reversed by optimizing the Ir thickness. By using the polarized neutron reflection (PNR) measurements, the canted noncollinear spin configuration was observed in Co/Ir/Co trilayers, which results from the competition of magnetic inhomogeneity. In addition, the asymmetric domain walls demonstrated by micromagnetic simulations result from introducing imbalance magnetism, leading to the deterministic magnetization switching in Co/Ir/Co trilayers. Our findings highlight a promising route to electric-controlled magnetism via tunable spin configuration, improve our understanding of physical mechanisms, and significantly promote industrial applications in spintronic devices.

Coherent antiferromagnetic spintronics

Antiferromagnets have attracted extensive interest as a material platform in spintronics. So far, antiferromagnet-enabled spin-orbitronics, spin-transfer electronics and spin caloritronics have formed the bases of antiferromagnetic spintronics. Spin transport and manipulation based on coherent antiferromagnetic dynamics have recently emerged, pushing the developing field of antiferromagnetic spintronics towards a new stage distinguished by the features of spin coherence. In this Review, we categorize and analyse the critical effects that harness the coherence of antiferromagnets for spintronic applications, including spin pumping from monochromatic antiferromagnetic magnons, spin transmission via phase-correlated antiferromagnetic magnons, electrically induced spin rotation and ultrafast spin-orbit effects in antiferromagnets. We also discuss future opportunities in research and applications stimulated by the principles, materials and phenomena of coherent antiferromagnetic spintronics.

Transmutation Engineering Makes a Large Class of Stable and Exfoliable A3BX2 Compounds with Exceptional High Magnetic Critical Temperatures and Exotic Electronic Properties

We establish a robust protocol for materials innovation based on our proposed transmutation engineering strategy combined with combinatorial chemistry and hierarchical high-throughput screening to make a large class of layered 2D A₃BX₂ materials. After several rounds of efficient screening, 60 types of easily exfoliable and highly stable A₃BX₂ monolayers have been obtained. Excitingly, four representative monolayers (ferromagnetic Fe₃SiS₂ and Fe₃GeS₂, antiferromagnetic Mn₃PbTe₂ and Co₃GeSe₂) demonstrate quite high magnetic critical temperatures of 600 (T_C), 630 (T_C), 770 (T_N), and 510 K (T_N), respectively. Through electronic fingerprint identification, the magnetic exchange mechanism is fundamentally unveiled at the atomic level in combination with a local chemical topology environment and crystal/exchange field. Furthermore, two simple and effective unified descriptors are proposed to perfectly explain the origin of magnetic strain regulation. Some intriguing materials (featuring double Dirac cones, node-loops, and ultrahigh Fermi velocities) are expected to be used in high-speed and low-dissipation nanodevices. This material family forms a dataset, which establishes a platform to discover and explore unexpected physicochemcial properties and develop promising applications under different circumstances. The chemical trends of diverse properties for this class of materials are revealed, which offers guiding insights for the development of spintronics and nanoelectronics with the target of exploiting both spin and charge degrees of freedom directed functional materials design and screening.

Anisotropic Excitons Reveal Local Spin Chain Directions in a van der Waals Antiferromagnet

A long-standing pursuit in materials science is to identify suitable magnetic semiconductors for integrated information storage, processing, and transfer. Van der Waals magnets have brought forth new material candidates for this purpose. Recently, sharp exciton resonances in antiferromagnet NiPS₃ have been reported to correlate with magnetic order, that is, the exciton photoluminescence intensity diminishes above the Néel temperature. Here, it is found that the polarization of maximal exciton emission rotates locally, revealing three possible spin chain directions. This discovery establishes a new understanding of the antiferromagnet order hidden in previous neutron scattering and optical experiments. Furthermore, defect-bound states are suggested as an alternative exciton formation mechanism that has yet to be explored in NiPS₃ . The supporting evidence includes chemical analysis, excitation power, and thickness dependent photoluminescence and first-principles calculations. This mechanism for exciton formation is also consistent with the presence of strong phonon side bands. This study shows that anisotropic exciton photoluminescence can be used to read out local spin chain directions in antiferromagnets and realize multi-functional devices via spin-photon transduction.

Spin-flip-driven anomalous Hall effect and anisotropic magnetoresistance in a layered Ising antiferromagnet

The influence of magnetocrystalline anisotropy in antiferromagnets is evident in a spin flip or flop transition. Contrary to spin flops, a spin-flip transition has been scarcely presented due to its specific condition of relatively strong magnetocrystalline anisotropy and the role of spin-flips on anisotropic phenomena has not been investigated in detail. In this study, we present antiferromagnet-based functional properties on an itinerant Ising antiferromagnet Ca_0.9Sr_0.1Co₂As₂. In the presence of a rotating magnetic field, anomalous Hall conductivity and anisotropic magnetoresistance are demonstrated, the effects of which are maximized above the spin-flip transition. Moreover, a joint experimental and theoretical study is conducted to provide an efficient tool to identify various spin states, which can be useful in spin-processing functionalities.

Preserving Metamagnetism in Self-Assembled FeRh Nanomagnets

Preparing and exploiting phase-change materials in the nanoscale form is an ongoing challenge for advanced material research. A common lasting obstacle is preserving the desired functionality present in the bulk form. Here, we present self-assembly routes of metamagnetic FeRh nanoislands with tunable sizes and shapes. While the phase transition between antiferromagnetic and ferromagnetic orders is largely suppressed in nanoislands formed on oxide substrates via thermodynamic nucleation, we find that nanomagnet arrays formed through solid-state dewetting keep their metamagnetic character. This behavior is strongly dependent on the resulting crystal faceting of the nanoislands, which is characteristic of each assembly route. Comparing the calculated surface energies for each magnetic phase of the nanoislands reveals that metamagnetism can be suppressed or allowed by specific geometrical configurations of the facets. Furthermore, we find that spatial confinement leads to very pronounced supercooling and the absence of phase separation in the nanoislands. Finally, the supported nanomagnets are chemically etched away from the substrates to inspect the phase transition properties of self-standing nanoparticles. We demonstrate that solid-state dewetting is a feasible and scalable way to obtain supported and free-standing FeRh nanomagnets with preserved metamagnetism.

Topological Hall Effect in Thin Films of an Antiferromagnetic Weyl Semimetal Integrated on Si

Since the large room-temperature anomalous Hall effect was discovered in noncollinear antiferromagnets, Mn₃Sn has received immense research interest as it exhibits abundant exotic physical properties including Weyl points and enormous potential for antiferromagnetic spintronic device applications. In this work, we report the emergence of the topological Hall effect in Mn₃Sn films grown on Si that is the workhorse for the modern highly integrated information technology. Importantly, through a series of systematic comparative experiments, the intriguing topological Hall effect phenomenon related to the appearance of the noncoplanar chiral spin structure is found to be induced by the Mn₃Sn/SiO₂ interface. Furthermore, it was found that the current injection to a Pt/Mn₃Sn bilayer Hall bar device can effectively manipulate the chiral spin structure of Mn₃Sn, which demonstrates the feasibility of Si-based noncollinear antiferromagnetic spintronics.

Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

Antiferromagnetic spintronics^1-16 is a rapidly growing field in condensed-matter physics and information technology with potential applications for high-density and ultrafast information devices. However, the practical application of these devices has been largely limited by small electrical outputs at room temperature. Here we describe a room-temperature exchange-bias effect between a collinear antiferromagnet, MnPt, and a non-collinear antiferromagnet, Mn₃Pt, which together are similar to a ferromagnet-antiferromagnet exchange-bias system. We use this exotic effect to build all-antiferromagnetic tunnel junctions with large nonvolatile room-temperature magnetoresistance values that reach a maximum of about 100%. Atomistic spin dynamics simulations reveal that uncompensated localized spins at the interface of MnPt produce the exchange bias. First-principles calculations indicate that the remarkable tunnelling magnetoresistance originates from the spin polarization of Mn₃Pt in the momentum space. All-antiferromagnetic tunnel junction devices, with nearly vanishing stray fields and strongly enhanced spin dynamics up to the terahertz level, could be important for next-generation highly integrated and ultrafast memory devices^7,9,16.

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices^1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface¹ and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn₃Sn/MgO/Mn₃Sn (ref. ⁶). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn₃Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet⁷ can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets^8-10.

Higher harmonics in planar Hall effect induced by cluster magnetic multipoles

Antiferromagnetic (AFM) materials are attracting tremendous attention due to their spintronic applications and associated novel topological phenomena. However, detecting and identifying the spin configurations in AFM materials are quite challenging due to the absence of net magnetization. Herein, we report the practicality of utilizing the planar Hall effect (PHE) to detect and distinguish “cluster magnetic multipoles” in AFM Nd₂Ir₂O₇ (NIO-227) fully strained films. By imposing compressive strain on the spin structure of NIO-227, we artificially induced cluster magnetic multipoles, namely dipoles and A₂- and T₁-octupoles. Importantly, under magnetic field rotation, each magnetic multipole exhibits distinctive harmonics of the PHE oscillation. Moreover, the planar Hall conductivity has a nonlinear magnetic field dependence, which can be attributed to the magnetic response of the cluster magnetic octupoles. Our work provides a strategy for identifying cluster magnetic multipoles in AFM systems and would promote octupole-based AFM spintronics.

The lack of net magnetization in antiferromagnets makes them technologically promising, but it also makes detecting the spin orders challenging. Here, using electrical transport measurement, Song et al show how the planar Hall effect can detect different cluster magnetic multipoles in antiferromagnetic Nd₂Ir₂O₇ film.

Depinning phase transition of antiferromagnetic skyrmions with quenched disorder

Antiferromagnetic skyrmions are considered to be promising information carriers due to their attractive properties. Therefore, the pinning phenomenon of antiferromagnetic skyrmions is of great significance. With the Landau-Lifshitz-Gilbert equation, we simulate the nonstationary dynamic behaviors of skyrmions driven by currents in a chiral antiferromagnetic thin film with quenched disorder. Based on the dynamic scaling forms, the critical current and static and dynamic critical exponents of the depinning phase transition are accurately determined. A theoretical analysis using Thiele's approach is presented in comparison with the numerical simulation. Unlike the ferromagnetic skyrmions, the critical current of the antiferromagnetic skyrmions is very sensitive to a small nonadiabatic coefficient. This is important for manipulating antiferromagnetic skyrmions and designing novel information processing devices.

Spin homojunction with high interfacial transparency for efficient spin-charge conversion

High interfacial transparency is vital to achieve efficient spin-charge conversion for ideal spintronic devices with low energy consumption. However, in traditional ferromagnetic/nonmagnetic heterojunctions, the interfacial Rashba spin-orbit coupling brings about spin memory loss (SML) and two-magnon scattering (TMS), quenching spin current crossing the heterointerfaces. To address the intrinsic deficiency of heterointerface, we design a ferromagnetic FeRh/antiferromagnetic FeRh spin homojunction for efficient spin-charge conversion, verified by a high interfacial transparency of 0.75 and a high spin torque efficiency of 0.34 from spin pumping measurements. First-principles calculations demonstrate that the interfacial electric field of homojunction is two orders of magnitude smaller than that of traditional heterojunction, producing negligible interfacial spin-orbit coupling to drastically reduce SML and TMS. Our spin homojunction exhibits potential and enlightenment for future energy-efficient spintronic devices.

Antiferromagnetic spintronics: An overview and outlook

Over the past few decades, the diversified development of antiferromagnetic spintronics has made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of AFMs. As AFMs are internally magnetic, taking full use of AFMs for information storage has been the main target of research. In this paper, we provide a comprehensive description of AFM spintronics applications from the interface coupling, read-out operations, and writing manipulations perspective. We examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory (MRAM), and review the latest mechanisms of the manipulation and detection of AFMs. Finally, based on exchange bias (EB) manipulation, a high-performance EB-MRAM is introduced as the next generation of AFM-based memories, which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.

Third harmonic characterization of antiferromagnetic heterostructures

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. For heavy-metal/ferromagnet systems, harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect and elucidate current-induced switching. However, harmonic measurement of spin-orbit torques has never been verified in antiferromagnetic heterostructures. Here, we report harmonic measurements in Pt/α-Fe2O3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/α-Fe2O3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear Antiferromagnetic Metal

The discovery of the anomalous Hall effect in noncollinear antiferromagnetic metals represents one of the most important breakthroughs for the emergent antiferromagnetic spintronics. The tuning of chemical potential has been an important theoretical approach to varying the anomalous Hall conductivity, but the direct experimental demonstration has been challenging owing to the large carrier density of metals. In this work, an ultrathin noncollinear antiferromagnetic Mn₃ Ge film is fabricated and its carrier density is modulated by ionic liquid gating. Via a small voltage of ≈3 V, its carrier density is altered by ≈90% and, accordingly, the anomalous Hall effect is completely switched off. This work thus creates an attractive new way to steering the anomalous Hall effect in noncollinear antiferromagnets.

Observation of Spin Splitting Torque in a Collinear Antiferromagnet RuO_{2}

Current-induced spin torques provide efficient data writing approaches for magnetic memories. Recently, the spin splitting torque (SST) was theoretically predicted, which combines advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) as well as enables controllable spin polarization. Here we provide the experimental evidence of SST in collinear antiferromagnet RuO_{2} films. The spin current direction is found to be correlated to the crystal orientation of RuO_{2} and the spin polarization direction is dependent on (parallel to) the Néel vector. These features are quite characteristic for the predicted SST. Our finding not only presents a new member for the spin torques besides traditional STT and SOT, but also proposes a promising spin source RuO_{2} for spintronics.

X-ray nanodiffraction imaging reveals distinct nanoscopic dynamics of an ultrafast phase transition

SignificancePhase transitions, the changes between states of matter with distinct electronic, magnetic, or structural properties, are at the center of condensed matter physics and underlie valuable technologies. First-order phase transitions are intrinsically heterogeneous. When driven by ultrashort excitation, nanoscale phase regions evolve rapidly, which has posed a significant experimental challenge to characterize. The newly developed laser-pumped X-ray nanodiffraction imaging technique reported here has simultaneous 100-ps temporal and 25-nm spatial resolutions. This approach reveals pathways of the nanoscale structural rearrangement upon ultrafast optical excitation, different from those transitions under slowly varying parameters. The spatiotemporally resolved structural characterization provides crucial nanoscopic insights into ultrafast phase transitions and opens opportunities for controlling nanoscale phases on ultrafast time scales.

Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity

Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO₃ thin films at room temperature are discovered. It can be reversibly switched between these two non-volatile antiferromagnetic states by a moderate magnetic field and a non-contact optical approach. Importantly, the conductivity of the areas with each antiferromagnetic textures is drastically different. It is conclusively demonstrated the capability of optical writing and electrical reading of these newly discovered bistable antiferromagnetic states in the BiFeO₃ thin films.

Exchange-Torque-Triggered Fast Switching of Antiferromagnetic Domains

The antiferromagnet is considered to be a promising hosting material for the next generation of magnetic storage due to its high stability and stray-field-free property. Understanding the switching properties of the antiferromagnetic (AFM) domain state is critical for developing AFM spintronics. By utilizing the magneto-optical birefringence effect, we experimentally demonstrate the switching rate of the AFM domain can be enhanced by more than 2 orders of magnitude through applying an alternating square-wave field on a single crystalline Fe/CoO bilayer. The observed extraordinary speed can be much faster than that triggered by a constant field with the same amplitude. The effect can be understood as the efficient suppression of the pinning of AFM domain walls by the strong exchange torque triggered by the reversal of the Fe magnetization, as revealed by spin dynamics simulations. Our finding opens up new opportunities to design the antiferromagnet-based spintronic devices utilizing the ferromagnet-antiferromagnet heterostructure.

Current-induced Néel order switching facilitated by magnetic phase transition

Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM) materials the most promising candidate for the next-generation magnetic memory technology with revolutionary storage density and writing speed. However, owing to the extremely large exchange energy barriers, energy-efficient manipulation has been a fundamental challenge in AFM systems. Here, we report an electrical writing of antiferromagnetic orders through a record-low current density on the order of 10⁶ A cm⁻² facilitated by the unique AFM-ferromagnetic (FM) phase transition in FeRh. By introducing a transient FM state via current-induced Joule heating, the spin-orbit torque can switch the AFM order parameter by 90° with a reduced writing current density similar to ordinary FM materials. This mechanism is further verified by measuring the temperature and magnetic bias field dependences, where the X-ray magnetic linear dichroism (XMLD) results confirm the AFM switching besides the electrical transport measurement. Our findings demonstrate the exciting possibility of writing operations in AFM-based devices with a lower current density, opening a new pathway towards pure AFM memory applications.

Electrical manipulation of antiferromagnetic order is crucial for future memory devices, but existing switching schemes require a large current density. Here, the authors achieve record low current density switching in FeRh by taking advantage of its antiferromagnetic to ferromagnetic phase transition.

Creating a Ferromagnetic Ground State with Tc Above Room Temperature in a Paramagnetic Alloy through Non-Equilibrium Nanostructuring

Materials with strong magnetostructural coupling have complex energy landscapes featuring multiple local ground states, thus making it possible to switch among distinct magnetic-electronic properties. However, these energy minima are rarely accessible by a mere application of an external stimuli to the system in equilibrium state. A ferromagnetic ground state, with T_c above room temperature, can be created in an initially paramagnetic alloy by nonequilibrium nanostructuring. By a dealloying process, bulk chemically disordered FeRh alloys are transformed into a nanoporous structure with the topology of a few nanometer-sized ligaments and nodes. Magnetometry and Mössbauer spectroscopy reveal the coexistence of two magnetic ground states, a conventional low-temperature spin-glass and a hitherto-unknown robust ferromagnetic phase. The emergence of the ferromagnetic phase is validated by density functional theory calculations showing that local tetragonal distortion induced by surface stress favors ferromagnetic ordering. The study provides a means for reaching conventionally inaccessible magnetic states, resulting in a complete on/off ferromagnetic-paramagnetic switching over a broad temperature range.

Recent developments on the magnetic and electrical transport properties of FeRh- and Rh-based heterostructures

It is fascinating how the binary alloy FeRh has been the subject of a vast number of studies almost solely for a single-phase transition. This is, however, reasonable, considering how various degrees of freedom are intertwined around this phase transition. Furthermore, the tunability of this phase transition-the large response to tuning parameters, such as electric field and strain-endows FeRh huge potential in applications. Compared to the bulk counterpart, FeRh in the thin-film form is superior in many aspects: materials in thin-film form are often more technologically relevant in the first place; in addition, the substrates add extra dimensions to the tunability, especially when the substrate itself is multiferroic. Here we review recent developments on the magnetic and transport properties of heterostructures based on FeRh and its end-member Rh, with the latter providing a new route to exploiting spin-orbit interactions in functional spintronic heterostructures other than the more often employed 5dmetals. The methods utilized in the investigation of the physical properties in these systems, and the design principles employed in the engineering thereof may conceivably be extended to similar phase transitions to other magnetic materials.

Controlling the Metamagnetic Phase Transition in FeRh/MnRh Superlattices and Thin-Film Fe50-xMnxRh50 Alloys

Equiatomic and chemically ordered FeRh and MnRh compounds feature a first-order metamagnetic phase transition between antiferromagnetic and ferromagnetic order in the vicinity of room temperature, exhibiting interconnected structural, magnetic, and electronic order parameters. We show that these two alloys can be combined to form hybrid metamagnets in the form of sputter-deposited superlattices and alloys on single-crystalline MgO substrates. Despite being structurally different, the magnetic behavior of the alloys with substantial Mn content resembles that of the FeRh/MnRh superlattices in the ultrathin individual layer limit. For FeRh/MnRh superlattices, dissimilar lattice distortions of the constituent FeRh and MnRh layers at the antiferromagnetic-ferromagnetic transition cause double-step transitions during cooling, while the magnetization during the heating branch shows a smooth, continuous trend. For Fe_50-xMn_xRh₅₀ alloy films, the substitution of Mn at the Fe sites introduces an effective tensile in-plane strain and magnetic frustration in the highly ordered epitaxial films, largely influencing the phase transition temperature T_M (by more than 150 K). In addition, Mn acts as a surfactant, enabling the growth of continuous thin films at higher temperatures. Thus, the introduction of hybrid FeRh-MnRh systems with adjustable parameters provides a pathway for the realization of tunable spintronic devices based on magnetic phase transitions.

Cryo infrared spectroscopy of N2 adsorption onto bimetallic rhodium-iron clusters in isolation

We investigated the N₂ adsorption behavior of bimetallic rhodium-iron cluster cations [Rh_iFe_j(N₂)_m]⁺ by means of InfraRed MultiplePhotoDissociation (IR-MPD) spectroscopy in comparison with density functional theory (DFT) modeling. This approach allows us to refine our kinetic results [Ehrhard et al., J. Chem. Phys. (in press)] to enhance our conclusions. We focus on a selection of cluster adsorbate complexes within the ranges of i = j = 3-8 and m = 1-10. For i = j = 3, 4, DFT suggests alloy structures in the case of i = j = 4 of high (D_2d) symmetry: Rh-Fe bonds are preferred instead of Fe-Fe bonds or Rh-Rh bonds. N₂ adsorption and IR-MPD studies reveal strong evidence for preferential adsorption to Rh sites and mere secondary adsorption to Fe. In some cases, we observe adsorption isomers. With the help of modeling the cluster adsorbate complex [Rh₃Fe₃(N₂)₇]⁺, we find clear evidence that the position of IR bands allows for an element specific assignment of an adsorption site. We transfer these findings to the [Rh₄Fe₄(N₂)_m]⁺ cluster adsorbate complex where the first four N₂ molecules are exclusively adsorbed to the Rh atoms. The spectra of the larger adsorbates reveal N₂ adsorption onto the Fe atoms. Thus, the spectroscopic findings are well interpreted for the smaller clusters in terms of computed structures, and both compare well to those of our accompanying kinetic study [Ehrhard et al., J. Chem. Phys. (in press)]. In contrast to our previous studies of bare rhodium clusters, the present investigations do not provide any indication for a spin quench in [Rh_iFe_j(N₂)_m]⁺ upon stepwise N₂ adsorption.

Structural, Electronic and Magnetic Properties of Mn2Co1-xVxZ (Z = Ga, Al) Heusler Alloys: An Insight from DFT Study

Structural, electronic, and magnetic properties of Mn2Co1-xVxZ (Z = Ga, Al, x = 0, 0.25, 0.5, 0.75, 1) Heusler alloys were theoretically investigated for the case of L21 (space group Fm3¯m), L21b (L21 structure with partial disordering between Co and Mn atoms) and XA (space group F4¯3m) structures. It was found that the XA structure is more stable at low V concentrations, while the L21 structure is energetically favorable at high V concentrations. A transition from L21 to XA ordering occurs near x = 0.5, which qualitatively agrees with the experimental results. Comparison of the energies of the L21b and XA structures leads to the fact that the phase transition between these structures occurs at x = 0.25, which is in excellent agreement with the experimental data. The lattice parameters linearly change as x grows. For the L21 structure, a slight decrease in the lattice constant a was observed, while for the XA structure, an increase in a was found. The experimentally observed nonlinear behavior of the lattice parameters with a change in the V content is most likely a manifestation of the presence of a mixture of phases. Almost complete compensation of the magnetic moment was achieved for the Mn2Co1-xVxZ alloy (Z = Ga, Al) at x = 0.5 for XA ordering. In the case of the L21 ordering, it is necessary to consider a partial disorder of atoms in the Mn and Co sublattices in order to achieve compensation of the magnetic moment.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloy

In antiferromagnetic spintronics, the read-out of the staggered magnetization or Néel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn₂Au, a unique metallic antiferromagnet that exhibits Néel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit from the well-established read-out methods of ferromagnets, while the essential advantages of antiferromagnetic spintronics are only slightly diminished. We show one-to-one imprinting of the antiferromagnetic on the ferromagnetic domain pattern. Conversely, alignment of the Permalloy magnetization reorients the Mn₂Au Néel vector, an effect, which can be restricted to large magnetic fields by tuning the ferromagnetic layer thickness. To understand the origin of the strong coupling, we carry out high resolution electron microscopy imaging and we find that our growth yields an interface with a well-defined morphology that leads to the strong exchange coupling.

Current-induced manipulation of exchange bias in IrMn/NiFe bilayer structures

The electrical control of antiferromagnetic moments is a key technological goal of antiferromagnet-based spintronics, which promises favourable device characteristics such as ultrafast operation and high-density integration as compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments by electric current has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report current-induced manipulation of the exchange bias in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface which then rotate the antiferromagnetic moments. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.

Antiferromagnets have great promise for spin-based information processing, offering both high operation speed, and an immunity to stray fields. Here, Kang et al demonstrate electrical manipulation of the exchange-bias, without the need for a heavy metal layer.

General synthesis of mixed-dimensional van der Waals heterostructures with hexagonal symmetry

The combination of two-dimensional (2D) materials with non-2D materials (quantum dots, nanowires and bulk materials), i.e. mixed-dimensional van der Waals (md-vdW) heterostructures endow 2D materials with remarkable electronics properties. However, it remains a big challenge to synthesize md-vdW heterostructures because of the difference of crystal symmetry between 2D and non-2D materials. Meanwhile, it is difficult to initiate the nucleation due to the lack of chemical active sites on chemical inert surfaces of 2D materials. Herein, we design a general chemical vapor deposition method for synthesizing a broad class of md-vdW heterostructures with well-aligned hexagonal symmetry including MoS₂/FeS, MoS₂/CoS, MoS₂/MnS, MoS₂/ZnS, Mo(S_xSe_1-x)₂/ZnS_xSe_1-x, Mo(S_xSe_1-x)₂/CdS_xSe_1-x. Combining with DFT calculation, we find that the hexagonal symmetry and the centered clusters of MoS₂and Mo(S_xSe_1-x)₂nanoflakes are two crucial factors to launch the hexagonally oriented growth and nucleation of non-2D materials on 2D materials. Our discovery opens an opportunity for the versatile hetero-integration of 2D materials and allows systematic investigation of physical properties in a wide variety of md-vdW heterostructures.

Possible Routes to Obtain Enhanced Magnetoresistance in a Driven Quantum Heterostructure with a Quasi-Periodic Spacer

In this work, we perform a numerical study of magnetoresistance in a one-dimensional quantum heterostructure, where the change in electrical resistance is measured between parallel and antiparallel configurations of magnetic layers. This layered structure also incorporates a non-magnetic spacer, subjected to quasi-periodic potentials, which is centrally clamped between two ferromagnetic layers. The efficiency of the magnetoresistance is further tuned by injecting unpolarized light on top of the two sided magnetic layers. Modulating the characteristic properties of different layers, the value of magnetoresistance can be enhanced significantly. The site energies of the spacer is modified through the well-known Aubry-André and Harper (AAH) potential, and the hopping parameter of magnetic layers is renormalized due to light irradiation. We describe the Hamiltonian of the layered structure within a tight-binding (TB) framework and investigate the transport properties through this nanojunction following Green's function formalism. The Floquet-Bloch (FB) anstaz within the minimal coupling scheme is introduced to incorporate the effect of light irradiation in TB Hamiltonian. Several interesting features of magnetotransport properties are represented considering the interplay between cosine modulated site energies of the central region and the hopping integral of the magnetic regions that are subjected to light irradiation. Finally, the effect of temperature on magnetoresistance is also investigated to make the model more realistic and suitable for device designing. Our analysis is purely a numerical one, and it leads to some fundamental prescriptions of obtaining enhanced magnetoresistance in multilayered systems.

Spin-induced linear polarization of photoluminescence in antiferromagnetic van der Waals crystals

Antiferromagnets are promising components for spintronics due to their terahertz resonance, multilevel states and absence of stray fields. However, the zero net magnetic moment of antiferromagnets makes the detection of the antiferromagnetic order and the investigation of fundamental spin properties notoriously difficult. Here, we report an optical detection of Néel vector orientation through an ultra-sharp photoluminescence in the van der Waals antiferromagnet NiPS₃ from bulk to atomically thin flakes. The strong correlation between spin flipping and electric dipole oscillator results in a linear polarization of the sharp emission, which aligns perpendicular to the spin orientation in the crystal. By applying an in-plane magnetic field, we achieve manipulation of the photoluminescence polarization. This correlation between emitted photons and spins in layered magnets provides routes for investigating magneto-optics in two-dimensional materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies.

Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

Discovery of two dimensional (2D) magnets, showing intrinsic ferromagnetic (FM) or antiferromagnetic (AFM) orders, has accelerated development of novel 2D spintronics, in which all the key components are made of van der Waals (vdW) materials and their heterostructures. High-performing and energy-efficient spin functionalities have been proposed, often relying on current-driven manipulation and detection of the spin states. In this regard, metallic vdW magnets are expected to have several advantages over the widely-studied insulating counterparts, but have not been much explored due to the lack of suitable materials. Here, we report tunable itinerant ferro- and antiferromagnetism in Co-doped Fe₄GeTe₂ utilizing the vdW interlayer coupling, extremely sensitive to the material composition. This leads to high T_N antiferromagnetism of T_N ~ 226 K in a bulk and ~210 K in 8 nm-thick nanoflakes, together with tunable magnetic anisotropy. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets as an active component of vdW spintronic applications.

Metallic van der Waals magnets have considerable technological promise, due to their ability to be strongly coupled with electronic currents and integrated in two dimensional heterostructures. Here, Seo et al. demonstrate highly tunable itinerant antiferromagnetism in a van der Waals magnet.

Fractal-Stereometric Correlation of Nanoscale Spatial Patterns of GdMnO3 Thin Films Deposited by Spin Coating

Multiferroic systems are of great interest for technological applications. To improve the fabrication of thin films, stereometric and fractal analysis of surface morphology have been extensively performed to understand the influence of physical parameters on the quality of spatial patterns. In this work, GaMnO3 was synthesized and thin films were deposited on Pt(111)/TiO2/SiO2/Si substrates using a spin coating apparatus to study the correlation between their stereometric and fractal parameters. All films were studied by X-ray diffraction (XRD), where the structure and microstructure of the film sintered at 850 °C was investigated by Rietveld refinement. Topographic maps of the films were obtained using an atomic force microscope (AFM) in tapping mode. The results show that the film sintered at 850 °C exhibited a clear formation of a GdMnO3 orthorhombic structure with crystallite size of ~14 nm and a microstrain higher than other values reported in the literature. Its surface morphology presented a rougher topography, which was confirmed by the height parameters. Topographic differences due to different asymmetries and shapes of the height distributions between the films were observed. Specific stereometric parameters also showed differences in the morphology and microtexture of the films. Qualitative rendering obtained by commercial image processing software revealed substantial differences between the microtextures of the films. Fractal and advanced fractal parameters showed that the film sintered at 850 °C had greater spatial complexity, which was due to their higher topographic roughness, lower surface percolation and greater topographic uniformity, being dominated by low dominant special frequencies. Our combination of stereometric and fractal measurements can be useful to improve the fabrication process by optimizing spatial patterns as a function of the sintering temperature of the film.

Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge

Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.