Elementary steps in electrical doping of organic semiconductors

Influence of imide side-chain functionality in the doping characteristics of naphthalenediimide derivatives as electron transport materials

Achieving effective doping in n-type organic molecular charge transport materials is critical for the development of high-performance optoelectronic devices. However, the role of side-chains in doping reactions remains incompletely understood in some systems. This study focuses on naphthalenediimide (NDI) derivatives, which offer simple synthetic protocols and potentially lower costs compared to traditional fullerene-derived materials. In particular, we explore two functionalised NDI derivatives, comparing one with polar ethylene glycol side-chains (NDI-G) to a non-polar variant with branched alkyl side-chains (NDI-EtHx). Our results show that the effectiveness and speed of the doping reaction with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) is much higher with the more polar NDI-G derivative. We postulate that this arises partly from the closer interactions between the dopant and the NDI molecule, facilitated by the polar glycol side-chains. As a result, thin films reach conductivities exceeding 10-2 S cm-1. We additionally demonstrate their incorporation into efficient perovskite solar cells, demonstrating the effectiveness of the doping process. We investigate this process with a combination of spectroscopy and density functional theory (DFT) modelling, showing that a complex is likely formed between the resulting N-DMBI cation and the NDI radical anion which then promotes electron transfer to a neutral NDI molecule, thereby generating free charge in the film. These findings underscore the importance of synthetic design on the doping behaviour, with the incorporation of ethylene glycol side-chains emerging as an effective strategy to achieve better electrical conductivity for NDI based systems.

Application of n-Type or p-Type Dopants in Organic Photovoltaics

Compared to inorganic semiconductors, organic semiconductors (OSCs) exhibit lower permittivity and carrier mobility. This is primarily attributed to their weaker van der Waals forces and the significant structural and energetic disorder, ultimately impeding the commercial application of organic photovoltaics (OPVs). However, the introduction of n-type or p-type dopants offers a solution. These dopants effectively eliminate intrinsic traps in OSCs through trap-filling techniques, elevating carrier concentration and mobility, and consequently enhancing overall performance. This article delves into the systematic exploration of n-type and p-type dopant applications in OPVs. It encompasses doping mechanisms, commonly used n-type and p-type dopants, doping methodologies, the strategic distribution of dopants and the effect of doping on device performance. Ultimately, this concept strives to offer invaluable insights and guidance for advancing OPV performance via doping techniques.

Doped organic thermoelectric short wavelength infrared detectors

Photon-based organic photodetector performance drops rapidly when going beyond near-infrared light detection due to nonradiative recombination. Here, we report on a device concept for infrared detection using organic thermoelectrics coupled to an infrared absorption film for heat generation. These short wavelength infrared (SWIR) detectors show an excellent area normalized responsivity of over 109 milliampere per watt per square meter at 1 V, two to three orders of magnitude higher than the conjugated polymer SWIR detector reported in the literature and typical organic photodetectors in the visible and near-infrared wavelength range. Moreover, the devices show a fast switch-on time with an estimated 3-decibel frequency of over 610 kilohertz, making the device suitable for a wide range of applications. However, the specific detectivity of the current device concept is limited to 104 Jones. We discuss strategies for improving the specific detectivities of these detectors with technology computer-aided design simulations.

Intermolecular-force-driven anisotropy breaks the thermoelectric trade-off in n-type conjugated polymers

Controlling the molecular orientation of conjugated polymers is a vital yet complex process to modulate their optoelectronic properties along with boosting device performance. Here we propose a molecular-force-driven anisotropy strategy to modulate the molecular orientation of conjugated polymers. This strategy relies on the intermolecular interactions, gauged by the Hansen solubility parameters framework, to provide solvent selection criteria for conjugated polymers that render films with a preferential orientation. We showcase molecular-force-driven anisotropy to overcome the inverse coupling between the electrical conductivity and Seebeck coefficient in solution-processed organic thermoelectrics, a major challenge in the field. Our kinetic Monte Carlo simulations suggest that edge-on orientations break the trade-off by increasing the in-plane delocalization length. The molecular-force-driven anisotropy approach yields a power factor of 115 μW m-1 K-2 and a figure of merit of 0.17 at room temperature for the doped n-type 2DPP-2CNTVT:N-DMBI system. This power factor is 20 times larger than that of conventional doping approaches.

Novel Cerium-Based p-Dopants with Low Parasitic Absorption for Improved Organic Devices

High electrical conductivity and improved charge carrier injection enabled by molecular doping are pivotal for high-performance, energy-efficient, and stable organic optoelectronic devices. Molecular doping is a key element in device design and manufacturing of active-matrix organic light-emitting diode displays, a multi-billion dollar market. However, it is an inherent feature of state-of-the-art small molecule dopants and their charge-transfer complexes to strongly absorb in the visible and near-infrared spectral range. This parasitic effect results in absorption losses, reducing the performance in light-harvesting and light-emitting applications. Here, a novel class of vacuum-processable cerium-based p-dopants with excellent processing properties and competitive doping strength even in organic hole transport layers with low-lying valence levels is presented. A substantial reduction in parasitic absorption for layers doped by the new dopants in the visible and near-infrared range is found. The reduced polaron absorption of the dopant anions is in excellent agreement with theoretical simulations. By incorporating these dopants into near-infrared narrowband organic photodetectors, the specific detectivity can be increased by one order of magnitude compared to devices with the established dopant 1,3,4,5,7,8-hexafluorotetracyanonaphthoquinodimethane (F6-TCNNQ). The decreased parasitic absorption yields optical-microcavity-enhanced photodetectors with significantly reduced full-width at half maximum, paving the way toward more efficient and wavelength-selective infrared detectors.

Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm-1, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.

Integrated Materials Design and Process Engineering for n-Type Polymer Thermoelectrics

Polymer thermoelectrics (TEs) have attracted increasing interest in recent years, owing to their great potential in intimate integration with wearable electronics for powering small electronics/sensors and personal temperature regulation. Over the past few decades, substantial progress has been made in enhancing polymer TE performance. However, the electrical conductivity and power factor of most n-doped polymers are about an order of magnitude lower than those of their p-type counterparts, impeding the development of highly efficient polymer TE devices. In addition, unlike well-studied inorganic materials, the complex charge transport mechanism and polymer-dopant interactions in polymer TE materials have hindered a comprehensive understanding of the structure-property relationships. This Perspective aims to survey recent achievements in understanding the charge transport mechanism and selectively provide some critical insights into molecular design and process engineering for n-type polymer TEs. We also highlight the great potential of polymer TEs in wearable electronics and offer an outlook for future development.

Toward Thin-Film Laser Diodes with Metal Halide Perovskites

Metal halide perovskite semiconductors hold a strong promise for enabling thin-film laser diodes. Perovskites distinguish themselves from other non-epitaxial media primarily through their ability to maintain performance at high current densities, which is a critical requirement for achieving injection lasing. Coming in a wide range of varieties, numerous perovskites delivered low-threshold optical amplified spontaneous emission and optically pumped lasing when combined with a suitable optical cavity. A progression toward electrically pumped lasing requires the development of efficient light-emitting structures with reduced optical losses and high radiative efficiency at lasing-level current densities. This involves a set of important trade-offs in terms of material choice, stack and waveguide design, as well as resonator integration. In this Perspective, the key milestones are highlighted that have been achieved in the study of passive optical waveguides and light-emitting diodes, and these learnings are translated toward more complex laser diode architectures. Finally, a novel resonator integration route is proposed that is capable of relaxing optical and electrical design constraints.

Electrostatically Designing Materials and Interfaces

Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.

High-Performance n-Type Organic Thermoelectrics with Exceptional Conductivity by Polymer-Dopant Matching

Achieving high electrical conductivity (σ) and power factor (PF) simultaneously remains a significant challenge for n-type organic themoelectrics (OTEs). Herein, we demonstrate the state-of-the-art OTEs performance through blending a fused bithiophene imide dimer-based polymer f-BTI2g-SVSCN and its selenophene-substituted analogue f-BSeI2g-SVSCN with a julolidine-functionalized benzimidazoline n-dopant JLBI, vis-à-vis when blended with commercially available n-dopants TAM and N-DMBI. The advantages of introducing a more lipophilic julolidine group into the dopant structure of JLBI are evidenced by the enhanced OTEs performance that JLBI-doped films show when compared to those doped with N-DMBI or TAM. In fact, thanks to the enhanced intermolecular interactions and the lower-lying LUMO level enabled by the increase of selenophene content in polymer backbone, JLBI-doped films of f-BSeI2g-SVSCN exhibit a unprecedent σ of 206 S cm-1 and a PF of 114 μW m-1 K-2. Interestingly, σ can be further enhanced up to 326 S cm-1 by using TAM dopant as a consequence of its favorable diffusion behavior into densely packed crystalline domains. These values are the highest to date for solution-processed molecularly n-doped polymers, demonstrating the effectiveness of the polymer-dopant matching approach carried out in this work.

Development of High Performance Thermoelectric Polymers via Doping or Dedoping Engineering

It is of great significance to develop high-performance thermoelectric (TE) materials, because they can be used to harvest waste heat into electricity and there is abundant waste heat on earth. The conventional TE materials are inorganic semimetals or semiconductors like Bi2Te3 and its derivatives. However, they have problems of high cost, scarce/toxic elements, high thermal conductivity, and poor mechanical flexibility. Organic TE materials emerged as the next-generation TE materials because of their merits including solution processability, low cost, abundant element, low intrinsic thermal conductivity, and high mechanical flexibility. Organic TE materials are mainly conducting polymers because of their high conductivity. Both the conductivity and Seebeck coefficient depend on the doping level, and they are interdependent. Hence, the TE properties of polymers can be improved through doping/dedoping engineering. There are three types of doping forms, oxidative (or reductive) doping, protonic acid doping, and charge transfer doping. Accordingly, they can be dedoped by different approaches. In this article, we review the methods to dope and dedope p-type and n-type TE polymers and the combination of doping and dedoping to optimize their TE properties. Secondary doping is also covered, since it can significantly enhance the conductivity of some TE polymers.

Alcohol-Processable All-Polymer n-Type Thermoelectrics

The general strategy for n-type organic thermoelectric is to blend n-type conjugated polymer hosts with small molecule dopants. In this work, all-polymer n-type thermoelectric is reported by dissolving a novel n-type conjugated polymer and a polymer dopant, poly(ethyleneimine) (PEI), in alcohol solution, followed by spin-coating to give polymer host/polymer dopant blend film. To this end, an alcohol-soluble n-type conjugated polymer is developed by attaching polar and branched oligo (ethylene glycol) (OEG) side chains to a cyano-substituted poly(thiophene-alt-co-thiazole) main chain. The main chain results in the n-type property and the OEG side chain leads to the solubility in hexafluorineisopropanol (HFIP). In the polymer host/polymer dopant blend film, the Coulombic interaction between the dopant counterions and the negatively charged polymer chains is reduced and the ordered stacking of the polymer host is preserved. As a result, the polymer host/polymer dopant blend exhibits the power factor of 36.9 µW m-1 K-1, which is one time higher than that of the control polymer host/small molecule dopant blend. Moreover, the polymer host/polymer dopant blend shows much better thermal stability than the control polymer host/small molecule dopant blend. This research demonstrates the high performance and excellent stability of all-polymer n-type thermoelectric.

Doping Ferrocene-Based Conjugated Microporous Polymers with 7,7,8,8-Tetracyanoquinodimethane for Efficient Photocatalytic CO2 Reduction

The design and synthesis of organic photocatalysts remain a great challenge due to their strict structural constraints. However, this could be mitigated by achieving structural flexibility by constructing permanent porosity into the materials. Conjugated microporous polymers (CMPs) are an emerging class of porous materials with an amorphous, three-dimensional network structure, which makes it possible to integrate the elaborate functional groups to enhance photocatalytic performance. Here, we report the synthesis of a novel CMP, named TAPFc-TFPPy-CMP, constructed by 1,1'3,3'-tetra(4-aminophenyl)ferrocene (TAPFc) and 1,3,6,8-tetrakis(4-formylphenyl)pyrene (TFPPy) monomers. The integration of the p-type dopant 7,7,8,8-tetracyanoquinodimethane (TCNQ) into the TAPFc-TFPPy-CMP improved the light adsorption performance, leading to a decrease in the optical bandgap from 2.00 to 1.43 eV. The doped CMP (TCNQ@TAPFc-TFPPy-CMP) exhibited promising catalytic activity in photocatalytic CO2 reduction under visible light, yielding 546.8 μmol g-1 h-1 of CO with a selectivity of 96% and 5.2 μmol g-1 h-1 of CH4. This represented an 80% increase in the CO yield compared to the maternal TAPFc-TFPPy-CMP. The steady-state photoluminescence (PL) and fluorescence lifetime (FL) measurements reveal faster carrier separation and transport after the doping. This study provides guidance for the development of organic photocatalysts for the utilization of renewable energy.

Chemical modification and doping of poly(p-phenylenes): A theoretical study

CONTEXT

Conjugated polymers (CPs) have been recognized as promising materials for the manufacture of electronic devices. However, further studies are still needed to enhance the electrical conductivity of these type of organic materials. The two main strategies for achieving this improvement are the doping process and chemical modification of the polymer chain. Therefore, in this article, we conduct a theoretical investigation, employing DFT calculations to evaluate the structural, energetic, and electronic properties of pristine and push-pull-derived poly(p-phenylene) oligomers (PPPs), as well as the analysis at the molecular level of the polymer doping process. As a primary conclusion, we determined that the PPP oligomer substituted with the push-pull group 4-EtN/CNPhNO2 exhibited the smallest HOMO-LUMO gap (Eg) among the studied oligomers. Moreover, we observed that the doping process, whether through electron removal or the introduction of the dopant anion ClO4-, led to a substantial reduction in the Eg of the PPP, indicating an enhancement in the polymer's electrical conductivity.

METHODS

DFT calculations were conducted using the PBE0 functional along with the Pople's split valence 6-31G(d,p) basis set, which includes polarization functions on all atoms (B97D/6-31G(d,p)).

Molecular Doping Modulation and Applications of Structure-Sorted Single-Walled Carbon Nanotubes: A Review

Single-walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post-silicon electronics. Molecular doping, with its non-destructive and fine-tunable characteristics, is emerging as the primary doping approach for the structure-controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure-controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure-sorting strategies leads to significantly improved functionality of SWCNT-based field-effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.

Emerging Two-Dimensional Organic Semiconductor-Incorporated Perovskites─A Fascinating Family of Hybrid Electronic Materials

Halide perovskites have attracted a great amount of attention owing to their unique materials chemistry, excellent electronic properties, and low-cost manufacturing. Two-dimensional (2D) halide perovskites, originating from three-dimensional (3D) perovskite structures, are structurally more diverse and therefore create functional possibilities beyond 3D perovskites. The much less restrictive size constraints on the organic component of these hybrid materials particularly provide an exciting platform for designing unprecedented materials and functionalities at the molecular level. In this Perspective, we discuss the concept and recent development of a sub-class of 2D perovskites, namely, organic semiconductor-incorporated perovskites (OSiPs). OSiPs combine the electronic functionality of organic semiconductors with the soft and dynamic halide perovskite lattice, offering opportunities for tailoring the energy landscape, lattice and carrier dynamics, and electron/ion transport properties for various fundamental studies, as well as device applications. Specifically, we summarize recent advances in the design, synthesis, and structural analysis of OSiPs with various organic conjugated moieties as well as the application of OSiPs in photovoltaics, light-emitting devices, and transistors. Lastly, challenges and further opportunities for OSiPs in molecular design, integration of novel functionality, film quality, and stability issues are addressed.

Dual donor-acceptor covalent organic frameworks for hydrogen peroxide photosynthesis

Constructing photocatalytically active and stable covalent organic frameworks containing both oxidative and reductive reaction centers remain a challenge. In this study, benzotrithiophene-based covalent organic frameworks with spatially separated redox centers are rationally designed for the photocatalytic production of hydrogen peroxide from water and oxygen without sacrificial agents. The triazine-containing framework demonstrates high selectivity for H2O2 photogeneration, with a yield rate of 2111 μM h-1 (21.11 μmol h-1 and 1407 μmol g-1 h-1) and a solar-to-chemical conversion efficiency of 0.296%. Codirectional charge transfer and large energetic differences between linkages and linkers are verified in the double donor-acceptor structures of periodic frameworks. The active sites are mainly concentrated on the electron-acceptor fragments near the imine bond, which regulate the electron distribution of adjacent carbon atoms to optimally reduce the Gibbs free energy of O2* and OOH* intermediates during the formation of H2O2.

A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor

In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning of improved DOS parameters. By introducing the Gibbs entropy, a new multi-parameter DOS and traditional Gaussian DOS are used to verify this method, and the simulated result of this method can well fit the experiment data obtained on three organic devices. In particular, the impact of DOS parameters on the Gibbs entropy can also influence the impact of the energy disorder on the Seebeck coefficient.

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrene─an organic semiconductor with excellent transport properties─and extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.

Novel Organic Superbase Dopants for Ultraefficient N-Doping of Organic Semiconductors

Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping of OSCs remains a central challenge. Herein, the discovery of two organic superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants for OSCs is reported. Typical n-type semiconductors such as N2200 and PC₆₁ BM are shown to experience a significant increase of conductivity upon doping by the two dopants. In particular, the optimized electrical conductivity of P2-t-Bu-doped PC₆₁ BM reaches a record-high value of 2.64 S cm^-1 . The polaron generation efficiency of P2-t-Bu-doped in PC₆₁ BM is found to be over 35%, which is 2-3 times higher than that of benchmark n-dopant N-DMBI. In addition, a deprotonation-initiated, nucleophilic-attack-based n-doping mechanism is proposed for the organic superbases, which involves the deprotonation of OSC molecules, the nucleophilic attack of the resulting carbanions on the OSC's π-bonds, and the subsequent n-doping through single electron transfer process between the anionized and neutral OSCs. This work highlights organic superbases as promising n-dopants for OSCs and opens up opportunities to explore and develop highly efficient n-dopants.

Toward Nonepitaxial Laser Diodes

Thin-film organic, colloidal quantum dot, and metal halide perovskite semiconductors are all being pursued in the quest for a wavelength-tunable diode laser technology that does not require epitaxial growth on a traditional semiconductor substrate. Despite promising demonstrations of efficient light-emitting diodes and low-threshold optically pumped lasing in each case, there are still fundamental and practical barriers that must be overcome to reliably achieve injection lasing. This review outlines the historical development and recent advances of each material system on the path to a diode laser. Common challenges in resonator design, electrical injection, and heat dissipation are highlighted, as well as the different optical gain physics that make each system unique. The evidence to date suggests that continued progress for organic and colloidal quantum dot laser diodes will likely hinge on the development of new materials or indirect pumping schemes, while improvements in device architecture and film processing are most critical for perovskite lasers. In all cases, systematic progress will require methods that can quantify how close new devices get with respect to their electrical lasing thresholds. We conclude by discussing the current status of nonepitaxial laser diodes in the historical context of their epitaxial counterparts, which suggests that there is reason to be optimistic for the future.

Synthesis and Study of the Optical Properties of a Conjugated Polymer with Configurational Isomerism for Optoelectronics

A π-conjugated polymer (PBQT) containing bis-(2-ethylhexyloxy)-benzo [1,2-b'] bithiophene (BDT) units alternated with a quinoline-vinylene trimer was obtained by the Stille reaction. The chemical structure of the polymer was verified by nuclear magnetic resonance (1H NMR), Fourier transform infrared (FT-IR), and mass spectroscopy (MALDI-TOF). The intrinsic photophysical properties of the solution were evaluated by absorption and (static and dynamic) fluorescence. The polymer PBQT exhibits photochromism with a change in absorption from blue (449 nm) to burgundy (545 nm) and a change in fluorescence emission from green (513 nm) to orange (605 nm) due to conformational photoisomerization from the trans to the cis isomer, which was supported by theoretical calculations DFT and TD-DFT. This optical response can be used in optical sensors, security elements, or optical switches. Furthermore, the polymer forms spin-coated films with absorption properties that cover the entire visible range, with a maximum near the solar emission maximum. The frontier molecular orbitals, HOMO and LUMO, were calculated by cyclic voltammetry, and values of -5.29 eV and -3.69, respectively, and a bandgap of 1.6 eV were obtained, making this material a semiconductor with a good energetic match. These properties could suggest its use in photovoltaic applications.

Permittivity Threshold and Thermodynamics of Integer Charge-Transfer Complexation for an Organic Donor-Acceptor Pair

Molecular charge doping involves the formation of donor-acceptor charge-transfer complexes (CTCs) through integer or partial electron transfer; understanding how local chemical environment impacts complexation is important for controlling the properties of organic materials. We present steady-state and temperature-dependent spectroscopic investigations of the p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄TCNQ) complexed with the electron donor and hole transport material N,N'-diphenyl-N,N'-di-p-tolylbenzene-1,4-diamine (MPDA). Equilibrium formation constants (K_CT) were determined for donor-acceptor pairs dissolved in a series of solvents covering a range of values of permittivity. A threshold for highly favorable complex formation was observed to occur at ϵ ∼ 8-9, with large (>10⁴) and small (<10³) values of K_CT obtained in solvents of higher and lower permittivity, respectively, but with chloroform (ϵ = 4.81) exhibiting an anomalously high formation constant. Temperature-dependent formation constants were determined in order to evaluate the thermodynamics of complex formation. In 1,2-dichloroethane (ϵ = 10.36) and chlorobenzene (ϵ = 5.62), complex formation is both enthalpically and entropically favorable, with higher enthalpic and entropic stabilization in the solvent with higher permittivity. Complexation in chloroform is exothermic and entropically disfavored, indicating that specific, inner-shell solvent-solute interactions stabilize the charge-separated complex and result in a net increase in local solution structure. Our results provide insight into how modification to the chemical environment may be utilized to support stable integer charge transfer for molecular doping applications and requiring only modest changes in local permittivity.

Controlling doping efficiency in organic semiconductors by tuning short-range overscreening

Conductivity doping has emerged as an indispensable method to overcome the inherently low conductivity of amorphous organic semiconductors, which presents a great challenge in organic electronics applications. While tuning ionization potential and electron affinity of dopant and matrix is a common approach to control the doping efficiency, many other effects also play an important role. Here, we show that the quadrupole moment of the dopant anion in conjunction with the mutual near-field host-dopant orientation have a crucial impact on the conductivity. In particular, a large positive quadrupole moment of a dopant leads to an overscreening in host-dopant integer charge transfer complexes. Exploitation of this effect may enhance the conductivity by several orders of magnitude. This finding paves the way to a computer-aided systematic and efficient design of highly conducting amorphous small molecule doped organic semiconductors.

Unlocking the Full Potential of Electron-Acceptor Molecules for Efficient and Stable Hole Injection

Understanding the hole-injection mechanism and improving the hole-injection property are of pivotal importance in the future development of organic optoelectronic devices. Electron-acceptor molecules with high electron affinity (EA) are widely used in electronic applications, such as hole injection and p-doping. Although p-doping has generally been studied in terms of matching the ionization energy (IE) of organic semiconductors with the EA of acceptor molecules, little is known about the effect of the EA of acceptor molecules on the hole-injection property. In this work, the hole-injection mechanism in devices is completely clarified, and a strategy to optimize the hole-injection property of the acceptor molecule is developed. Efficient and stable hole injection is found to be possible even into materials with IEs as high as 5.8 eV by controlling the charged state of an acceptor molecule with an EA of about 5.0 eV. This excellent hole-injection property enables direct hole injection into an emitting layer, realizing a pure blue organic light-emitting diode with an extraordinarily low turn-on voltage of 2.67 V, a power efficiency of 29 lm W^-1 , an external quantum efficiency of 28% and a Commission Internationale de l'Eclairage y coordinate of less than 0.10.

Stretchable conductors for stretchable field-effect transistors and functional circuits

Stretchable electronics have received intense attention due to their broad application prospects in many areas, and can withstand large deformations and form close contact with curved surfaces. Stretchable conductors are vital components of stretchable electronic devices used in wearables, soft robots, and human-machine interactions. Recent advances in stretchable conductors have motivated basic scientific and technological research efforts. Here, we outline and analyse the development of stretchable conductors in transistors and circuits, and examine advances in materials, device engineering, and preparation technologies. We divide the existing approaches to constructing stretchable transistors with stretchable conductors into the following two types: geometric engineering and intrinsic stretchability engineering. Finally, we consider the challenges and outlook in this field for delivering stretchable electronics.

Extremely Suppressed Energetic Disorder in a Chemically Doped Conjugated Polymer

Chemical doping can be used to tune the optoelectronic properties of conjugated polymers (CPs), extending their applications as conducting materials. Unfortunately, chemically doped CP films containing excess dopants exhibit an increase in energetic disorder upon structural alteration, and Coulomb interactions between charge carriers and dopants also affect such disorder. The increase in energetic disorder leads to a broadening of the density of states, which consequently impedes efficient charge transport in chemically doped CPs. However, the molecular origins that are inherently resistant to such incidental increase of energetic disorder in chemically doped CPs have not been sufficiently explored. Here, it is discovered that energetic disorder in chemically doped CPs can be suppressed to a level close to the theoretical limit. Indacenodithiophene-co-benzothiadiazole (IDTBT) doped with triethyloxonium hexachloroantimonate (OA) exhibits disorder-free charge-transport characteristics and band-like transport behavior with astonishing carrier mobility as a result of reinforced 1D intramolecular transport. Molecular structure of IDTBT provides a capability to lower the energetic disorder that generally arises from the inclusion of heterogeneous dopants. The results suggest the possibilities of implementing disorder-free CPs that exhibit excellent charge transport characteristics in the chemically doped state and satisfy a prerequisite for their availability in the industry.

Thiazole Imide-Based All-Acceptor Homopolymer with Branched Ethylene Glycol Side Chains for Organic Thermoelectrics

n-Type semiconducting polymers with high thermoelectric performance remain challenging due to the scarcity of molecular design strategy, limiting their applications in organic thermoelectric (OTE) devices. Herein, we provide a new approach to enhance the OTE performance of n-doped polymers by introducing acceptor-acceptor (A-A) type backbone bearing branched ethylene glycol (EG) side chains. When doped with 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), the A-A homopolymer PDTzTI-TEG exhibits n-type electrical conductivity (σ) up to 34 S cm^-1 and power factor value of 15.7 μW m^-1  K^-2 . The OTE performance of PDTzTI-TEG is far greater than that of homopolymer PBTI-TEG (σ=0.27 S cm^-1 ), indicating that introducing electron-deficient thiazole units in the backbone further improves the n-doping efficiency. These results demonstrate that developing A-A type polymers with EG side chains is an effective strategy to enhance n-type OTE performance.

Revealing the Electrophilic-Attack Doping Mechanism for Efficient and Universal p-Doping of Organic Semiconductors

Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to some OSCs conditionally, seriously limiting their general applications. Herein, a novel p-doping mechanism is revealed by investigating the interactions between the dopant trityl tetrakis(pentafluorophenyl) borate (TrTPFB) and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of tritylated thiophenium ions, which subsequently induce electron transfer from neighboring P3HT chains to realize p-doping. This unique p-doping mechanism enables TrTPFB to p-dope various OSCs including those with high ionization energy (IE ≈ 5.8 eV). Moreover, this doping mechanism endows TrTPFB with strong doping capability, leading to doping efficiency of over 80% in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities toward highly efficient doping of various OSCs.

Charge-Transfer Complexes in Organic Field-Effect Transistors: Superior Suitability for Surface Doping

We demonstrate the key role of charge-transfer complexes in surface doping as a successful methodology for improving channel field-effect mobility and reducing the threshold voltage in organic field-effect transistors (OFETs), as well as raising the film conductivity. Demonstrated here for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C₈-BTBT) doped with 2,2'-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F₆TCNNQ), channel doping by sequential deposition is consistently rationalized by the development of a cocrystalline structure that forms and evolves from the surface of the organic semiconductor film without trading the thin-film structure integrity. This scenario brings higher benefits for the device operation than doping by codeposition, where a decrease in the field-effect mobility of the device, even for a dopant content of only 1 mol %, makes codeposition less suitable. Insight into the structural and electronic properties of the interface satisfactorily explains the improved performance of OFETs upon the incorporation of the dopant and provides an understanding of the mechanism of doping in this system.

Photo Stabilization of p-i-n Perovskite Solar Cells with Bathocuproine: MXene

Interface engineering is one of the promising strategies for the long-term stabilization of perovskite solar cells (PSCs), preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes-2D structured transition metal carbides and nitrides with various functionalization (O, -F, -OH) have demonstrated high potential for mastering the work function in halide perovskite absorbers and have significantly improved the n-type charge collection in solar cells. This work demonstrates that MXenes allow for efficient stabilization of PSCs besides improving their performances. A mixed composite bathocuproine:MXene, that is, (BCP:MXene) interlayer, is introduced at the interface between an electron-transport layer (ETL) and a metal cathode in the p-i-n device structure. The investigation demonstrates that the use of BCP:MXene interlayer slightly increases the power conversation efficiency (PCE) for PSCs (from 16.5 for reference to 17.5%) but dramatically improves the out of Glove-Box stability. Under ISOS-L-2 light soaking stress at 63 ± 1.5 °C, the T80 (time needed to reduce efficiency down to 80% of the initial one) period increases from 460 to > 2300 hours (h).

Organic bipolar transistors

Devices made using thin-film semiconductors have attracted much interest recently owing to new application possibilities. Among materials systems suitable for thin-film electronics, organic semiconductors are of particular interest; their low cost, biocompatible carbon-based materials and deposition by simple techniques such as evaporation or printing enable organic semiconductor devices to be used for ubiquitous electronics, such as those used on or in the human body or on clothing and packages^1–3. The potential of organic electronics can be leveraged only if the performance of organic transistors is improved markedly. Here we present organic bipolar transistors with outstanding device performance: a previously undescribed vertical architecture and highly crystalline organic rubrene thin films yield devices with high differential amplification (more than 100) and superior high-frequency performance over conventional devices. These bipolar transistors also give insight into the minority carrier diffusion length—a key parameter in organic semiconductors. Our results open the door to new device concepts of high-performance organic electronics with ever faster switching speeds.

An organic bipolar junction transistor composed of highly crystalline rubrene thin films has a device architecture that could be used in organic electronics with greatly improved high-frequency performance

High-Efficiency Ion-Exchange Doping of Conducting Polymers

Molecular doping-the use of redox-active small molecules as dopants for organic semiconductors-has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox-active character of these materials. A recent breakthrough was a doping technique based on ion-exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene) (PBTTT) doped with FeCl₃ and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm^-1 and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl₃ , are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.

Microscopic Study of Molecular Double Doping

Double doping, in which a single dopant molecule induces two charge carriers in an organic semiconductor (OSC), was recently experimentally observed and promises to enhance the efficiency of molecular doping. Here we present a theoretical investigation of p-type molecular double doping in a CN6-CP:bithiophene-thienothiophene OSC system. Our analysis is based on density functional theory (DFT) calculations for the electronic ground state. In a molecular complex with two OSC oligomers and one CN6-CP dopant molecule, we explicitly demonstrate double integer charge transfer and find the formation of two individual polarons on the OSC molecules and a dianion dopant molecule. We show that the vibrational modes and related infrared absorption spectrum of this complex can be traced back to those of the charged dopant and OSC molecules in their isolated forms. The near-infrared optical absorption spectrum calculated by time-dependent DFT shows features of both typical intramolecular polaron excitations and weak intermolecular charge transfer excitations associated with the doping-induced polaron states.

Highly efficient modulation doping: A path toward superior organic thermoelectric devices

We investigate the charge and thermoelectric transport in modulation-doped large-area rubrene thin-film crystals with different crystal phases. We show that modulation doping allows achieving superior doping efficiencies even for high doping densities, when conventional bulk doping runs into the reserve regime. Modulation-doped orthorhombic rubrene achieves much improved thermoelectric power factors, exceeding 20 μW m^-1 K^-2 at 80°C. Theoretical studies give insight into the energy landscape of the heterostructures and its influence on qualitative trends of the Seebeck coefficient. Our results show that modulation doping together with high-mobility crystalline organic semiconductor films is a previosly unexplored strategy for achieving high-performance organic thermoelectrics.

Alignment of organic conjugated molecules for high-performance device applications

High-performance organic semiconductor materials as the electroactive components of optoelectronic devices have attracted much attention and made them ideal candidates for solution-processable, large-area, and low-cost flexible electronics. Especially, organic field-effect transistors (OFETs) based on conjugated semiconductor materials have experienced stunning progress in device performance. To make these materials economically viable, comprehensive knowledge of charge transport mechanisms is required. The alignment of organic conjugated molecules in the active layer is vital to charge transport properties of devices. The present review highlights the recent progress of processing-structure-transport correlations that allow the precise and uniform alignment of organic conjugated molecules over large areas for multiple electronic applications, including OFETs, organic thermoelectric devices (OTEs), and organic phototransistors (OPTs). Different strategies for regulating crystallinity and macroscopic orientation of conjugated molecules are introduced to correlate the molecular packing, the device performance and charge transport anisotropy in multiple organic electronic devices. This article is protected by copyright. All rights reserved.

Photomultiplication-Type Organic Photodetectors for Near-Infrared Sensing with High and Bias-Independent Specific Detectivity

Highly responsive organic photodetectors allow a plethora of applications in fields like imaging, health, security monitoring, etc. Photomultiplication-type organic photodetectors (PM-OPDs) are a desirable option due to their internal amplification mechanism. However, for such devices, significant gain and low dark currents are often mutually excluded since large operation voltages often induce high shot noise. Here, a fully vacuum-processed PM-OPD is demonstrated using trap-assisted electron injection in BDP-OMe:C₆₀ material system. By applying only -1 V, compared with the self-powered working condition, the responsivity is increased by one order of magnitude, resulting in an outstanding specific detectivity of ≈10¹³  Jones. Remarkably, the superior detectivity in the near-infrared region is stable and almost voltage-independent up to -10 V. Compared with two photovoltaic-type photodetectors, these PM-OPDs exhibit the great potential to be easily integrated with state-of-the-art readout electronics in terms of their high responsivity, fast response speed, and bias-independent specific detectivity. The employed vacuum fabrication process and the easy-to-adapt PM-OPD concept enable seamless upscaling of production, paving the way to a commercially relevant photodetector technology.

Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing

Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.

Molecular solid solutions for advanced materials – homeomorphic or heteromorphic

Crystalline molecular solid solutions are discussed on the basis of homeomorphism and heteromorphism of blended molecules.

Doping-Induced Dielectric Catastrophe Prompts Free-Carrier Release in Organic Semiconductors

The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as organic light-emitting diodes or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10%, a phenomenon that has been put in relation with the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite doping in terms of collective screening phenomena. A multiscale model for the dielectric properties of doped organic semiconductor is set up by combining first principles and microelectrostatic calculations. The results predict a large nonlinear enhancement of the dielectric constant (tenfold at 8% load) as the system approaches a dielectric instability (catastrophe) upon increasing doping. This can be attributed to the presence of highly polarizable host-dopant complexes, plus a nontrivial leading contribution from dipolar interactions in the disordered and heterogeneous system. The enhanced screening in the material drastically reduces the (free) energy barriers for electron-hole separation, rationalizing the possibility for thermal charge release. The proposed mechanism is consistent with conductivity data and sets the basis for achieving higher conductivities at lower doping loads.

Doping Approaches for Organic Semiconductors

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Highly Efficient Doping of Conjugated Polymers Using Multielectron Acceptor Salts

Chemical doping is a vital tool for tuning electronic properties of conjugated polymers. Most single electron acceptors used for p-doping necessitate high dopant concentrations to achieve good electrical conductivity. However, high-molar doping ratios hamper doping efficiency. Here a new concept of using multielectron acceptor (MEA) salts as dopants for conjugated polymers is presented. Two novel MEA salts are synthesized and their doping efficiency towards two polymers differing in their dielectric properties are compared with two single electron acceptors such as NOPF₆ and magic blue. Cutting-edge methods such as ultraviolet photoelectron spectroscopy/X-ray photoelectron spectroscopy (XPS), impedance spectroscopy, and density of states analysis in addition to UV-vis-NIR absorption, spectroelectrochemistry, and Raman spectroscopy methods are used to characterize the doped systems. The tetracation salt improves the conductivity by two orders of magnitude and quadruples the charge carrier concentration compared to single electron acceptors for the same molar ratio. The differences in charge carrier density and activation energy on doping are delineated. Further, a strong dependency of the carrier release on the polymer polarity is observed. High carrier densities at reduced dopant loadings and improved doping efficacies using MEA dopants offer a highly efficient doping strategy for conjugated polymers.

Raising Dielectric Permittivity Mitigates Dopant-Induced Disorder in Conjugated Polymers

Conjugated polymers need to be doped to increase charge carrier density and reach the electrical conductivity necessary for electronic and energy applications. While doping increases carrier density, Coulomb interactions between the dopant molecules and the localized carriers are poorly screened, causing broadening and a heavy tail in the electronic density-of-states (DOS). The authors examine the effects of dopant-induced disorder on two complimentary charge transport properties of semiconducting polymers, the Seebeck coefficient and electrical conductivity, and demonstrate a way to mitigate them. Their simulations, based on a modified Gaussian disorder model with Miller-Abrahams hopping rates, show that dopant-induced broadening of the DOS negatively impacts the Seebeck coefficient versus electrical conductivity trade-off curve. Increasing the dielectric permittivity of the polymer mitigates dopant-carrier Coulomb interactions and improves charge transport, evidenced by simultaneous increases in conductivity and the Seebeck coefficient. They verified this increase experimentally in iodine-doped P3HT and P3HT blended with barium titanate (BaTiO3 ) nanoparticles. The addition of 2% w/w BaTiO3 nanoparticles increased conductivity and Seebeck across a broad range of doping, resulting in a fourfold increase in power factor. Thus, these results show a promising path forward to reduce the dopant-charge carrier Coulomb interactions and mitigate their adverse impact on charge transport.

Study on the difference in exciton generation processes for a single host and exciplex-type co-host

We distinctly reveal the difference in the exciton generation processes in phosphorescent organic light-emitting devices with an exciplex-type co-host and a single host. Excitons in the co-host consisting of 4,4,4-tris(N-carbazolyl)-triphenylamine and 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene are created via efficient energy transfer from the exciplex to the phosphorescent dopant. In contrast, excitons in the single host of 4,4,4-tris(N-carbazolyl)-triphenylamine are formed by the combination of holes and electrons trapped by the phosphorescent dopants. The optimized device utilizing the co-host system exhibits highly superior performance relative to the single-host device. The maximum external quantum efficiency and maximum luminance are 14.88% and 90,700cd/m² for the co-host device, being 1.6 times and 3.6 times the maximum external efficiency and maximum luminance for the single-host device, respectively. Significantly, the critical current density, evaluating the device efficiency roll-off characteristic, is as high as 327.8mA/cm², which is highly superior to 120.8mA/cm² for the single-host device, indicating the notable alleviation in efficiency roll-off for the co-host device. The significant improvement in device performance is attributed to eliminating the exciton quenching resulting from the captured holes and the efficient energy transfer from the exciplex-type co-host to the phosphorescent emitter incurred by the reverse intersystem crossing process.

Adduct-based p-doping of organic semiconductors

Electronic doping of organic semiconductors is essential for their usage in highly efficient optoelectronic devices. Although molecular and metal complex-based dopants have already enabled significant progress of devices based on organic semiconductors, there remains a need for clean, efficient and low-cost dopants if a widespread transition towards larger-area organic electronic devices is to occur. Here we report dimethyl sulfoxide adducts as p-dopants that fulfil these conditions for a range of organic semiconductors. These adduct-based dopants are compatible with both solution and vapour-phase processing. We explore the doping mechanism and use the knowledge we gain to 'decouple' the dopants from the choice of counterion. We demonstrate that asymmetric p-doping is possible using solution processing routes, and demonstrate its use in metal halide perovskite solar cells, organic thin-film transistors and organic light-emitting diodes, which showcases the versatility of this doping approach.

Achieving Efficient n-Doping of Conjugated Polymers by Molecular Dopants

ConspectusMolecular doping is one of the most central propositions in the field of organic electronics. Unlike classical inorganic semiconductors doped by atomic substitution, organic conjugated materials react with molecular dopants, and then intermolecular charge transfer is involved within. Therefore, the complex noncovalent interactions between two components often cause the molecular dopant to destroy the orderly stacking of the host organic materials and reduce the original properties of the material, such as carrier mobility, which here we call the "doping dilemma." Recently, many studies focus on improving p-doping efficiency and electrical conductivity of doped conjugated polymers; however, the development of n-type molecular doping currently lags far behind that of its p-counterpart. It is well-known that both efficient p- and n-type molecular doping are indispensable in various organic electronic devices, including light-emitting diodes, photovoltaics, field-effect transistors, and thermoelectrics. It is thus an urgent requirement to achieve efficient n-doping in conjugated polymers.In this Account, we give a brief overview of our efforts to improve the n-doping efficiency in conjugated polymers with several strategies from the aspects of the polymer/dopant molecular design and the exploration of the n-type molecular doping mechanism and charge transport mechanism in n-doped organic materials. For the conjugated polymer engineering, we first demonstrate that increasing the electron affinity of the host polymer through halogen substitution can boost the n-doping efficiency. Still, the rigid coplanar backbones of conjugated polymers play a crucial role in the polaron delocalization and final electrical performance. In addition, we emphasize the importance of morphology control in the doped polymers to address the "doping dilemma." For n-dopants designing, we summarize some basic guidelines from molecular sizes and shapes, the interaction between dopants (or dopant cations) and polymers, and the effects of dopants on morphology to design high-efficacy n-type molecular dopants. We propose that the polymers and the dopants need to be treated as a whole system; while enhancing the ionization efficiency, more attention should be paid to the carrierization (free-carrier generation) efficiency of these binary systems. In the end, we adopt the n-type polymer thermoelectric material as an example to discuss the grand challenges encountered in practical applications of n-doped conjugated polymers. The air stability and micrometer-thick thermo-leg processing of n-doped polymers are highlighted for thermoelectric applications. It is our hope that this Account showcases a blueprint for rational approaches and a deep understanding toward the design and development of efficient n-doping in conjugated polymers, bringing n-doped organic materials into the next era.