1
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Lim S, Kim TW, Park T, Heo YS, Yang S, Seo H, Suh J, Lee JU. Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400737. [PMID: 38874112 DOI: 10.1002/smll.202400737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 05/16/2024] [Indexed: 06/15/2024]
Abstract
Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal-organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen-rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal-rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.
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Affiliation(s)
- Seungjae Lim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Tae Wan Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Taejoon Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Yoon Seong Heo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Seonguk Yang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Jae-Ung Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
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2
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Sakib NU, Karim Sadaf MU, Pannone A, Ghosh S, Zheng Y, Ravichandran H, Das S. A Crayfish-Inspired Sensor Fusion Platform for Super Additive Integration of Visual, Chemical, and Tactile Information. NANO LETTERS 2024; 24:6948-6956. [PMID: 38810209 DOI: 10.1021/acs.nanolett.4c01187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
The concept of cross-sensor modulation, wherein one sensor modality can influence another's response, is often overlooked in traditional sensor fusion architectures, leading to missed opportunities for enhancing data accuracy and robustness. In contrast, biological systems, such as aquatic animals like crayfish, demonstrate superior sensor fusion through multisensory integration. These organisms adeptly integrate visual, tactile, and chemical cues to perform tasks such as evading predators and locating prey. Drawing inspiration from this, we propose a neuromorphic platform that integrates graphene-based chemitransistors, monolayer molybdenum disulfide (MoS2) based photosensitive memtransistors, and triboelectric tactile sensors to achieve "Super-Additive" responses to weak chemical, visual, and tactile cues and demonstrate contextual response modulation, also referred to as the "Inverse Effectiveness Effect." We hold the view that integrating bio-inspired sensor fusion principles across various modalities holds promise for a wide range of applications.
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Affiliation(s)
- Najam U Sakib
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Muhtasim Ul Karim Sadaf
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Subir Ghosh
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Yikai Zheng
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Harikrishnan Ravichandran
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Electrical Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States
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3
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Wang Y, Du C, Li P, Yang Y, Xiao Y, Ge T, Jiang X, Liu Y, Gao H, Li K, Wang W. Photodetectors Based on ZrS 3/MoS 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:29049-29059. [PMID: 38770760 DOI: 10.1021/acsami.4c03833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
High-performance photodetectors with the detection capability of linearly polarized light have broad applications in both military and civilian fields. Quasi-one-dimensional ZrS3 as an emerging anisotropic two-dimensional material has come under the spotlight owing to its intriguing properties. However, the performance of the ZrS3 photodetector is seriously restricted by its low responsivity. Herein, a novel high-performance photodetector based on the van der Waals ZrS3/MoS2 heterostructure is proposed. Attributed to the charge trapping-assisted photogating effect, interlayer carrier transitions, and fast spatial separation of the photogenerated electron-hole pairs, the device displays superior photoresponse characteristics ranging from the ultraviolet to the visible spectrum in terms of high responsivity up to 212 A/W, an extraordinary external quantum efficiency of 8.5 × 104%, and a prompt rise/decay time of 0.19/0.38 ms. In addition, owing to the profound birefringence and dichroism effects in ZrS3 together with strong light-matter interactions in the heterostructure, profound linear-polarization sensitivity is demonstrated with a dichroic ratio of about 2.8. Overall, this photodetector not only is integrated with the excellent properties of ZrS3 and monolayer MoS2 but also further enhances the advantages through interlayer couplings, which demonstrate the strong potential of the ZrS3-based devices for high-performance, ultrafast, and polarization-sensitive photodetection.
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Affiliation(s)
- Yuge Wang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Changhui Du
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Peipei Li
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yufen Yang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yunfei Xiao
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Tiantian Ge
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Xiaowen Jiang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yiman Liu
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Honglei Gao
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Kuilong Li
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Wenjia Wang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
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4
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Jadhav PR, Kolhe PT, Ghemud VS, Shelke PN, Patole SP, Dhole SD, Dahiwale SS. Modification of WS 2thin film properties using high dose gamma irradiation. NANOTECHNOLOGY 2024; 35:335701. [PMID: 38722286 DOI: 10.1088/1361-6528/ad4901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 05/09/2024] [Indexed: 05/29/2024]
Abstract
The tunability of the transition metal dichalcogenide properties has gained attention from numerous researchers due to their wide application in various fields including quantum technology. In the present work, WS2has been deposited on fluorine doped tin oxide substrate and its properties have been studied systematically. These samples were irradiated using gamma radiation for various doses, and the effect on structural, morphological, optical and electrical properties has been reported. The crystallinity of the material is observed to be decreased, and the results are well supported by x-ray diffraction, Raman spectroscopy techniques. The increase in grain boundaries has been supported by the agglomeration observed in the scanning electron microscopy micrographs. The XPS results of WS2after gamma irradiation show evolution of oxygen, carbon, C=O, W-O and SO4-2peaks, confirming the addition of impurities and formation of point defect. The gamma irradiation creates point defects, and their density increases considerably with increasing gamma dosage. These defects crucially altered the structural, optical and electrical properties of the material. The reduction in the optical band gap with increased gamma irradiation is evident from the absorption spectra and respective Tauc plots. TheI-Vgraphs show a 1000-fold increase in the saturation current after 100 kGy gamma irradiation dose. This work has explored the gamma irradiation effect on the WS2and suggests substantial modification in the material and enhancement in electrical properties.
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Affiliation(s)
- P R Jadhav
- Department of Physics, Savitribai Phule Pune University, Pune 411007, India
- Department of Physics, PDEA's Baburaoji Gholap College, Pune 411027, India
| | - P T Kolhe
- Department of Physics, Savitribai Phule Pune University, Pune 411007, India
- Department of Physics, Sangamner Nagarpalika Arts, DJM Commerce and BNS Science College, Sangamner 422605, India
| | - V S Ghemud
- Department of Physics, Savitribai Phule Pune University, Pune 411007, India
- Department of Physics, BJS's Arts, Science & Commerce College, Pune 412207, India
| | - P N Shelke
- Department of Physics, PDEA's Baburaoji Gholap College, Pune 411027, India
- Department of Physics, Waghire College, Saswad, 412301, India
| | - S P Patole
- Department of Physics, Khalifa University of Science and Technology, Abu Dhabi, 127788, United Arab Emirates
| | - S D Dhole
- Department of Physics, Savitribai Phule Pune University, Pune 411007, India
| | - S S Dahiwale
- Department of Physics, Savitribai Phule Pune University, Pune 411007, India
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5
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Shin W, Byeon J, Koo RH, Lim J, Kang JH, Jang AR, Lee JH, Kim JJ, Cha S, Pak S, Lee ST. Toward Ideal Low-Frequency Noise in Monolayer CVD MoS 2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2307196. [PMID: 38773725 DOI: 10.1002/advs.202307196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Revised: 03/17/2024] [Indexed: 05/24/2024]
Abstract
The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (ID) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low ID region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices.
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Affiliation(s)
- Wonjun Shin
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon, 16419, Republic of Korea
| | - Junsung Byeon
- Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Ryun-Han Koo
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jungmoon Lim
- Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Jung Hyeon Kang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan, 31080, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan, 31080, Republic of Korea
| | - Jong-Ho Lee
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
- Ministry of Science and ICT, Sejong, 30109, Republic of Korea
| | - Jae-Joon Kim
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - Sung-Tae Lee
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
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6
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Zhang Y, Zhao HL, Huang S, Hossain MA, van der Zande AM. Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain. ACS NANO 2024; 18:12377-12385. [PMID: 38701373 DOI: 10.1021/acsnano.4c01457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Two-dimensional electronic materials are a promising candidate for beyond-silicon electronics due to their favorable size scaling of electronic performance. However, a major challenge is the heterogeneous integration of 2D materials with CMOS processes while maintaining their excellent properties. In particular, there is a knowledge gap in how thin film deposition and processes interact with 2D materials to alter their strain and doping, both of which have a drastic impact on device properties. In this study, we demonstrate how to utilize process-induced strain, a common technique extensively applied in the semiconductor industry, to enhance the carrier mobility in 2D material transistors. We systematically varied the tensile strain in monolayer MoS2 transistors by iteratively depositing thin layers of high-stress MgOx stressor. At each thickness, we combined Raman spectroscopy and transport measurements to unravel and correlate the changes in strain and doping within each transistor with their performance. The transistors displayed uniform strain distributions across their channels for tensile strains of up to 0.48 ± 0.05%, at 150 nm of stressor thickness. At higher thicknesses, mechanical instability occurred, leading to nonuniform strains. The transport characteristics systematically varied with strain, with enhancement in electron mobility at a rate of 130 ± 40% per % strain and enhancement of the channel saturation current density of 52 ± 20%. This work showcases how established CMOS technologies can be leveraged to tailor the transport in 2D transistors, accelerating the integration of 2D electronics into a future computing infrastructure.
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Affiliation(s)
- Yue Zhang
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - He Lin Zhao
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Siyuan Huang
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - M Abir Hossain
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nano Technology Lab, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
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7
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Groll M, Bürger J, Caltzidis I, Jöns KD, Schmidt WG, Gerstmann U, Lindner JKN. DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe 2 by Differential Phase Contrast Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311635. [PMID: 38703033 DOI: 10.1002/smll.202311635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/02/2024] [Indexed: 05/06/2024]
Abstract
Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe2 bi- and trilayers are revealed using an emerging microscopy technique, differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.
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Affiliation(s)
- Maja Groll
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Julius Bürger
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Ioannis Caltzidis
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Klaus D Jöns
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Wolf Gero Schmidt
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Uwe Gerstmann
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Jörg K N Lindner
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
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8
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Gao S, Li H, Liu L, Tian Y, Wang R, Pan X, Wen F, Xiang J, Nie A, Zhai K, Wang B, Mu C, Xue T, Liu Z. Ultrasensitive CCL2 Detection in Urine for Diabetic Nephropathy Diagnosis Using a WS 2-Based Plasmonic Biosensor. NANO LETTERS 2024; 24:5301-5307. [PMID: 38625005 DOI: 10.1021/acs.nanolett.4c00981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
The accurate diagnosis of diabetic nephropathy relies on achieving ultrasensitive biosensing for biomarker detection. However, existing biosensors face challenges such as poor sensitivity, complexity, time-consuming procedures, and high assay costs. To address these limitations, we report a WS2-based plasmonic biosensor for the ultrasensitive detection of biomarker candidates in clinical human urine samples associated with diabetic nephropathy. Leveraging plasmonic-based electrochemical impedance microscopy (P-EIM) imaging, we observed a remarkable charge sensitivity in monolayer WS2 single crystals. Our biosensor exhibits an exceptionally low detection limit (0.201 ag/mL) and remarkable selectivity in detecting CC chemokine ligand 2 (CCL2) protein biomarkers, outperforming conventional techniques such as ELISA. This work represents a breakthrough in traditional protein sensors, providing a direction and materials foundation for developing ultrasensitive sensors tailored to clinical applications for biomarker sensing.
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Affiliation(s)
- Shuangshuang Gao
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Huili Li
- Department of Endocrinology, The First Hospital of Qinhuangdao, Qinhuangdao 066000, China
| | - Lixuan Liu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China
| | - Yiming Tian
- Department of Endocrinology, The First Hospital of Qinhuangdao, Qinhuangdao 066000, China
| | - Rui Wang
- Department of Endocrinology, The First Hospital of Qinhuangdao, Qinhuangdao 066000, China
| | - Xuanlin Pan
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Fusheng Wen
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Jianyong Xiang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Kun Zhai
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Bochong Wang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Congpu Mu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Tianyu Xue
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
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9
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Yu M, Tan C, Yin Y, Tang J, Gao X, Liu H, Ding F, Peng H. Integrated 2D multi-fin field-effect transistors. Nat Commun 2024; 15:3622. [PMID: 38684741 PMCID: PMC11058203 DOI: 10.1038/s41467-024-47974-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Accepted: 04/17/2024] [Indexed: 05/02/2024] Open
Abstract
Vertical semiconducting fins integrated with high-κ oxide dielectrics have been at the centre of the key device architecture that has promoted advanced transistor scaling during the last decades. Single-fin channels based on two-dimensional (2D) semiconductors are expected to offer unique advantages in achieving sub-1 nm fin-width and atomically flat interfaces, resulting in superior performance and potentially high-density integration. However, multi-fin structures integrated with high-κ dielectrics are commonly required to achieve higher electrical performance and integration density. Here we report a ledge-guided epitaxy strategy for growing high-density, mono-oriented 2D Bi2O2Se fin arrays that can be used to fabricate integrated 2D multi-fin field-effect transistors. Aligned substrate steps enabled precise control of both nucleation sites and orientation of 2D fin arrays. Multi-channel 2D fin field-effect transistors based on epitaxially integrated 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructures were fabricated, exhibiting an on/off current ratio greater than 106, high on-state current, low off-state current, and high durability. 2D multi-fin channel arrays integrated with high-κ oxide dielectrics offer a strategy to improve the device performance and integration density in ultrascaled 2D electronics.
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Affiliation(s)
- Mengshi Yu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Yuling Yin
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, China
| | - Junchuan Tang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xiaoyin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Feng Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
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10
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Liu Y, Gao S, Liu L, Wang J, Wang D, Xiang J, Nie A, Zhai K, Mu C, Wen F, Wang B, Xue T, Liu Z. Plasmonic Imaging of Single DNA with Charge Sensitive Monolayer WS 2. ACS Sens 2024; 9:2134-2140. [PMID: 38626725 DOI: 10.1021/acssensors.4c00167] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
Imaging the surface charge of biomolecules such as proteins and DNA, is crucial for comprehending their structure and function. Unfortunately, current methods for label-free, sensitive, and rapid imaging of the surface charge of single DNA molecules are limited. Here, we propose a plasmonic microscopy strategy that utilizes charge-sensitive single-crystal monolayer WS2 materials to image the local charge density of a single λ-DNA molecule. Our study reveals that WS2 is a highly sensitive charge-sensitive material that can accurately measure the local charge density of λ-DNA with high spatial resolution and sensitivity. The consistency of the surface charge density values obtained from the single-crystal monolayer WS2 materials with theoretical simulations demonstrates the reliability of our approach. Our findings suggest that this class of materials has significant implications for the development of label-free, scanning-free, and rapid optical detection and charge imaging of biomolecules.
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Affiliation(s)
- Yang Liu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Shuangshuang Gao
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Lixuan Liu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China
| | - Ji Wang
- BGI Research, Shenzhen 518000, China
| | | | - Jianyong Xiang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Kun Zhai
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Congpu Mu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Fusheng Wen
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Bochong Wang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Tianyu Xue
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
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11
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Choi HS, Lin J, Wang G, Wong WPD, Park IH, Lin F, Yin J, Leng K, Lin J, Loh KP. Molecularly thin, two-dimensional all-organic perovskites. Science 2024; 384:60-66. [PMID: 38574140 DOI: 10.1126/science.adk8912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Accepted: 02/22/2024] [Indexed: 04/06/2024]
Abstract
Recently, the emergence of all-organic perovskites with three-dimensional (3D) structures has expanded the potential applications of perovskite materials. However, the synthesis and utilization of all-organic perovskites in 2D form remain largely unexplored because the design principle has not been developed. We present the successful synthesis of a metal-free 2D layered perovskite, denoted as the Choi-Loh van der Waals phase (CL-v phase), with the chemical formula A2B2X4, where A represents a larger-sized cation compared to B and X denotes an anion. The CL-v phase exhibits a van der Waals gap enabled by interlayer hydrogen bonding and can be exfoliated or grown as molecularly thin 2D organic crystals. The dielectric constants of the CL-v phase range from 4.8 to 5.5 and we demonstrate their potential as gate dielectrics for thin-film transistors.
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Affiliation(s)
- Hwa Seob Choi
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Jun Lin
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Walter P D Wong
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - In-Hyeok Park
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, Daejeon 34134, Republic of Korea
| | - Fang Lin
- College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China
| | - Jun Yin
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Kai Leng
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Kian Ping Loh
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
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12
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Park J, Kim JO, Kang SW. Lateral heterostructures of WS 2 and MoS 2 monolayers for photo-synaptic transistor. Sci Rep 2024; 14:6922. [PMID: 38519613 PMCID: PMC10959970 DOI: 10.1038/s41598-024-57642-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 03/20/2024] [Indexed: 03/25/2024] Open
Abstract
Von Neumann architecture-based computing, while widely successful in personal computers and embedded systems, faces inherent challenges including the von Neumann bottleneck, particularly amidst the ongoing surge of data-intensive tasks. Neuromorphic computing, designed to integrate arithmetic, logic, and memory operations, has emerged as a promising solution for improving energy efficiency and performance. This approach requires the construction of an artificial synaptic device that can simultaneously perform signal processing, learning, and memory operations. We present a photo-synaptic device with 32 analog multi-states by exploiting field-effect transistors based on the lateral heterostructures of two-dimensional (2D) WS2 and MoS2 monolayers, formed through a two-step metal-organic chemical vapor deposition process. These lateral heterostructures offer high photoresponsivity and enhanced efficiency of charge trapping at the interface between the heterostructures and SiO2 due to the presence of the WS2 monolayer with large trap densities. As a result, it enables the photo-synaptic transistor to implement synaptic behaviors of long-term plasticity and high recognition accuracy. To confirm the feasibility of the photo-synapse, we investigated its synaptic characteristics under optical and electrical stimuli, including the retention of excitatory post-synaptic currents, potentiation, habituation, nonlinearity factor, and paired-pulse facilitation. Our findings suggest the potential of versatile 2D material-synapse with a high density of device integration.
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Affiliation(s)
- Jaeseo Park
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Jun Oh Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Sang-Woo Kang
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea.
- Precision Measurement, University of Science and Technology, Daejeon, 34113, Republic of Korea.
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13
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Wang D, Tan C, Wang S, Yang Z, Yang L, Wang Z. Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics. ACS APPLIED MATERIALS & INTERFACES 2024; 16:14064-14071. [PMID: 38452753 DOI: 10.1021/acsami.3c19260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is formed due to the metal-induced gap states (MIGS), which greatly hinder the development of 2D semiconductor transistors in large-scale integrated circuits. Meanwhile, most air-stable 2D semiconductors are nonmagnetic, limiting the possibility of spintronic application. Here, we report a new strategy to suppress the MIGS and reduce the Schottky barrier height on 2D semiconductors (MoS2, WS2, and WSe2) by using lanthanide metal (Sm and Gd) contacts. It was found the lanthanide contacts exhibit a good Ohmic property with a near-zero Schottky barrier. As a result, the carrier mobility of MoS2 transistors reaches 118 cm2/(V s). Furthermore, Gd-contact MoS2 transistors show the typical magnetic property where the magnetoresistance reaches 2.7% at 5 K. By studying its spin valve effect, it was demonstrated that the nonlocal magnetoresistance is 4.1% and spin polarization is 3.25%. This study provides a promising pathway for high-performance 2D electronic and spintronics, which may open a new strategy for future computing-in-memory architecture.
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Affiliation(s)
- Dong Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Shaoyuan Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zhihao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
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14
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Pang X, Wang Y, Zhu Y, Zhang Z, Xiang D, Ge X, Wu H, Jiang Y, Liu Z, Liu X, Liu C, Hu W, Zhou P. Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition. Nat Commun 2024; 15:1613. [PMID: 38383735 PMCID: PMC10881999 DOI: 10.1038/s41467-024-46050-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 02/13/2024] [Indexed: 02/23/2024] Open
Abstract
In-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm2) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 106, and exceptionally high room-temperature mobility up to 406.7 cm2 V-1 s-1, four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm-940 nm), achieving function of motion detection and recognition.
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Affiliation(s)
- Xingchen Pang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Yang Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China.
| | - Yuyan Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhenhan Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Du Xiang
- State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China.
- Shanghai Qi Zhi Institute, Shanghai, 200232, China.
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haoqi Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Yongbo Jiang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zizheng Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China.
- State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China.
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15
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Wali A, Ravichandran H, Das S. A 2D Cryptographic Hash Function Incorporating Homomorphic Encryption for Secure Digital Signatures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400661. [PMID: 38373292 DOI: 10.1002/adma.202400661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Indexed: 02/21/2024]
Abstract
User authentication is a critical aspect of any information exchange system which verifies the identities of individuals seeking access to sensitive information. Conventionally, this approachrelies on establishing robust digital signature protocols which employ asymmetric encryption techniques involving a key pair consisting of a public key and its matching private key. In this article, a user verification platform constructed using integrated circuits (ICs) with atomically thin two-dimensional (2D) monolayer molybdenum disulfide (MoS2 ) memtransistors is presented. First, generation of secure cryptographic keys is demonstrated by exploiting the inherent stochasticity of carrier trapping and detrapping at the 2D/oxide interface trap sites. Subsequently, the ability to manipulate the functionality of logical NOR is leveraged to create a secure one-way hash function which when homomorphically operated upon with NAND, XOR, OR, NOT, and AND logic circuits generate distinct digital signatures. These signatures when subsequently decrypted, verify the authenticity of the receiver while ensuring complete preservation of data integrity and confidentiality as the underlying information is never revealed. Finally, the advantages of implementing a NOR-based hashing techniques in comparison to the conventional XOR-based encryption method are established. This demonstration highlights the potential of 2D-based ICs in developing critical hardware information security primitives.
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Affiliation(s)
- Akshay Wali
- Electrical Engineering and Computer Science, Penn State University, University Park, PA, 16802, USA
| | | | - Saptarshi Das
- Electrical Engineering and Computer Science, Penn State University, University Park, PA, 16802, USA
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA
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16
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Kandybka I, Groven B, Medina Silva H, Sergeant S, Nalin Mehta A, Koylan S, Shi Y, Banerjee S, Morin P, Delabie A. Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface. ACS NANO 2024; 18:3173-3186. [PMID: 38235963 DOI: 10.1021/acsnano.3c09364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire terraces rather than the sapphire step inclination ultimately govern the MoS2 crystal orientation. Strikingly, as the MoS2 crystals continue to grow laterally, the sapphire steps transform the MoS2 crystal geometry into diamond-shaped domains presumably by anisotropic diffusion of ad-species and facet development. Even though these MoS2 domains nucleate on sapphire with predominantly bimodal 0 and 60° azimuthal rotation, the individual domains reach lateral dimensions of up to 200 nm before merging seamlessly into a single-crystalline MoS2 monolayer upon coalescence. Plan-view transmission electron microscopy reveals the single-crystalline nature across 50 μm by 50 μm inspection areas. As a result, the median carrier mobility of MoS2 monolayers peaks at 25 cm2 V-1 s-1 with the highest value reaching 28 cm2 V-1 s-1. This work details synthesis-structure correlations and the possibilities to tune the structure and material properties through substrate topography toward various applications in nanoelectronics, catalysis, and nanotechnology. Moreover, shape modulation through anisotropic growth phenomena on stepped surfaces can provide opportunities for nanopatterning for a wide range of materials.
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Affiliation(s)
- Iryna Kandybka
- imec, Kapeldreef 75, Leuven 3001, Belgium
- Department of Chemistry KU Leuven, Celestijnenlaan 200F, Leuven 3001, Belgium
| | | | | | | | | | - Serkan Koylan
- imec, Kapeldreef 75, Leuven 3001, Belgium
- Quantum Solid State Physics KU Leuven, Celestijnenlaan 200D, Leuven 3001, Belgium
| | | | | | | | - Annelies Delabie
- imec, Kapeldreef 75, Leuven 3001, Belgium
- Department of Chemistry KU Leuven, Celestijnenlaan 200F, Leuven 3001, Belgium
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17
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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18
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Liu Z, Tee SY, Guan G, Han MY. Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications. NANO-MICRO LETTERS 2024; 16:95. [PMID: 38261169 PMCID: PMC10805767 DOI: 10.1007/s40820-023-01315-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 11/30/2023] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
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Affiliation(s)
- Zhaosu Liu
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China
| | - Si Yin Tee
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Guijian Guan
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
| | - Ming-Yong Han
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
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19
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Park J, Leem JW, Park M, Kim JO, Ku Z, Chegal W, Kang SW, Kim YL. Heteronanostructured Field-Effect Transistors for Enhancing Entropy and Parameter Space in Electrical Unclonable Primitives. ACS NANO 2024; 18:1041-1053. [PMID: 38117976 PMCID: PMC10786166 DOI: 10.1021/acsnano.3c10308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 12/08/2023] [Accepted: 12/14/2023] [Indexed: 12/22/2023]
Abstract
Hardware security is not a new problem but is ever-growing in consumer and medical domains owing to hyperconnectivity. A physical unclonable function (PUF) offers a promising hardware security solution for cryptographic key generation, identification, and authentication. However, electrical PUFs using nanomaterials or two-dimensional (2D) transition metal dichalcogenides (TMDCs) often have limited entropy and parameter space sources, both of which increase the vulnerability to attacks and act as bottlenecks for practical applications. We report an electrical PUF with enhanced entropy as well as parameter space by incorporating 2D TMDC heteronanostructures into field-effect transistors (FETs). Lateral heteronanostructures of 2D molybdenum disulfide and tungsten disulfide serve as a potent entropy source. The variable feature of FETs is further leveraged to enhance the parameter space that provides multiple challenge-response pairs, which are essential for PUFs. This combination results in stably repeatable yet highly variable FET characteristics as alternative electrical PUFs. Comprehensive PUF performance analyses validate the bit uniformity, reproducibility, uniqueness, randomness, false rates, and encoding capacity. The 2D material heteronanostructure-driven electrical PUFs with strong FET-to-FET variability can potentially be augmented as an immediately deployable and scalable security solution for various hardware devices.
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Affiliation(s)
- Jaeseo Park
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
- Precision
Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Jung Woo Leem
- Weldon
School of Biomedical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Minji Park
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Jun Oh Kim
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Zahyun Ku
- Materials
and Manufacturing Directorate, Air Force
Research Laboratory, Wright-Patterson
AFB, Ohio 45433, United States
| | - Won Chegal
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Sang-Woo Kang
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
- Precision
Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Young L. Kim
- Weldon
School of Biomedical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
- Purdue
Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
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20
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Jayachandran D, Pendurthi R, Sadaf MUK, Sakib NU, Pannone A, Chen C, Han Y, Trainor N, Kumari S, Mc Knight TV, Redwing JM, Yang Y, Das S. Three-dimensional integration of two-dimensional field-effect transistors. Nature 2024; 625:276-281. [PMID: 38200300 DOI: 10.1038/s41586-023-06860-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 11/10/2023] [Indexed: 01/12/2024]
Abstract
In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as 'More Moore'1 but also introduces multifunctionalities for 'More than Moore'2 technologies. Although silicon-based 3D integrated circuits are commercially available3-5, there is limited effort on 3D integration of emerging nanomaterials6,7 such as two-dimensional (2D) materials despite their unique functionalities7-10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, LCH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.
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Affiliation(s)
- Darsith Jayachandran
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
| | - Rahul Pendurthi
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
| | | | - Najam U Sakib
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA
| | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA
| | - Chen Chen
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA
| | - Ying Han
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA
| | - Nicholas Trainor
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA
- Materials Science and Engineering, Penn State University, University Park, PA, USA
| | - Shalini Kumari
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA
- Materials Science and Engineering, Penn State University, University Park, PA, USA
| | - Thomas V Mc Knight
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA
- Materials Science and Engineering, Penn State University, University Park, PA, USA
| | - Joan M Redwing
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA
- Materials Science and Engineering, Penn State University, University Park, PA, USA
- Materials Research Institute, Penn State University, University Park, PA, USA
| | - Yang Yang
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA
- Materials Research Institute, Penn State University, University Park, PA, USA
- Nuclear Engineering, Penn State University, University Park, PA, USA
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
- Materials Science and Engineering, Penn State University, University Park, PA, USA.
- Materials Research Institute, Penn State University, University Park, PA, USA.
- Electrical Engineering, Penn State University, University Park, PA, USA.
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21
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Ulian G, Valdrè G. Facile band gap tuning in graphene-brucite heterojunctions. Sci Rep 2023; 13:23090. [PMID: 38155172 PMCID: PMC10754930 DOI: 10.1038/s41598-023-50037-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 12/14/2023] [Indexed: 12/30/2023] Open
Abstract
The zero band gap of pure graphene is a well-known issue that limits some specific applications of graphene in opto- and microelectronics. This led to several research studies in the so-called van der Waals composites (known as heterostructures, or heterojunctions), where two monolayers of different materials are stacked and held together by dispersive interactions. In this paper, we introduced and considered a single layer of brucite Mg(OH)2, an overlooked 2D material that can be easily produced by exfoliation (like graphene from graphite), for the creation of the heterojunction. First principles simulations showed that brucite/graphene composites can modify the electronic properties (position of the Dirac cone with respect to the Fermi level and band gap) according to the crystallographic stacking and the presence of point defects. The present work represents then an important step forward in understanding and finding new ways to design two-dimensional materials with tailored electronic and physical properties.
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Affiliation(s)
- Gianfranco Ulian
- Dipartimento di Scienze Biologiche, Geologiche e Ambientali, Centro di Ricerche Interdisciplinari di Biomineralogia, Cristallografia e Biomateriali, Università di Bologna "Alma Mater Studiorum", Piazza di Porta San Donato 1, 40126, Bologna, Italy
| | - Giovanni Valdrè
- Dipartimento di Scienze Biologiche, Geologiche e Ambientali, Centro di Ricerche Interdisciplinari di Biomineralogia, Cristallografia e Biomateriali, Università di Bologna "Alma Mater Studiorum", Piazza di Porta San Donato 1, 40126, Bologna, Italy.
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22
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Chen M, Chai J, Wu J, Zheng H, Wu WY, Lourembam J, Lin M, Kim JY, Kim J, Ang KW, Ng MF, Medina H, Tong SW, Chi D. Sublimation-based wafer-scale monolayer WS 2 formation via self-limited thinning of few-layer WS 2. NANOSCALE HORIZONS 2023; 9:132-142. [PMID: 37850320 DOI: 10.1039/d3nh00358b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
Atomically-thin monolayer WS2 is a promising channel material for next-generation Moore's nanoelectronics owing to its high theoretical room temperature electron mobility and immunity to short channel effect. The high photoluminescence (PL) quantum yield of the monolayer WS2 also makes it highly promising for future high-performance optoelectronics. However, the difficulty in strictly growing monolayer WS2, due to its non-self-limiting growth mechanism, may hinder its industrial development because of the uncontrollable growth kinetics in attaining the high uniformity in thickness and property on the wafer-scale. In this study, we report a scalable process to achieve a 4 inch wafer-scale fully-covered strictly monolayer WS2 by applying the in situ self-limited thinning of multilayer WS2 formed by sulfurization of WOx films. Through a pulsed supply of sulfur precursor vapor under a continuous H2 flow, the self-limited thinning process can effectively trim down the overgrown multilayer WS2 to the monolayer limit without damaging the remaining bottom WS2 monolayer. Density functional theory (DFT) calculations reveal that the self-limited thinning arises from the thermodynamic instability of the WS2 top layers as opposed to a stable bottom monolayer WS2 on sapphire above a vacuum sublimation temperature of WS2. The self-limited thinning approach overcomes the intrinsic limitation of conventional vapor-based growth methods in preventing the 2nd layer WS2 domain nucleation/growth. It also offers additional advantages, such as scalability, simplicity, and possibility for batch processing, thus opening up a new avenue to develop a manufacturing-viable growth technology for the preparation of a strictly-monolayer WS2 on the wafer-scale.
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Affiliation(s)
- Mingxi Chen
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jianwei Chai
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jing Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Haofei Zheng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore
| | - Wen-Ya Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - James Lourembam
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jun-Young Kim
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jaewon Kim
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Kah-Wee Ang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore
| | - Man-Fai Ng
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore
| | - Henry Medina
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Shi Wun Tong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Dongzhi Chi
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
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23
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Zheng Y, Ghosh S, Das S. A Butterfly-Inspired Multisensory Neuromorphic Platform for Integration of Visual and Chemical Cues. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2307380. [PMID: 38069632 DOI: 10.1002/adma.202307380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 11/25/2023] [Indexed: 12/23/2023]
Abstract
Unisensory cues are often insufficient for animals to effectively engage in foraging, mating, and predatory activities. In contrast, integration of cues collected from multiple sensory organs enhances the overall perceptual experience and thereby facilitates better decision-making. Despite the importance of multisensory integration in animals, the field of artificial intelligence (AI) and neuromorphic computing has primarily focused on processing unisensory information. This lack of emphasis on multisensory integration can be attributed to the absence of a miniaturized hardware platform capable of co-locating multiple sensing modalities and enabling in-sensor and near-sensor processing. In this study, this limitation is addressed by utilizing the chemo-sensing properties of graphene and the photo-sensing capability of monolayer molybdenum disulfide (MoS2 ) to create a multisensory platform for visuochemical integration. Additionally, the in-memory-compute capability of MoS2 memtransistors is leveraged to develop neural circuits that facilitate multisensory decision-making. The visuochemical integration platform is inspired by intricate courtship of Heliconius butterflies, where female species rely on the integration of visual cues (such as wing color) and chemical cues (such as pheromones) generated by the male butterflies for mate selection. The butterfly-inspired visuochemical integration platform has significant implications in both robotics and the advancement of neuromorphic computing, going beyond unisensory intelligence and information processing.
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Affiliation(s)
- Yikai Zheng
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Subir Ghosh
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
- Electrical Engineering, Penn State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA
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24
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Yan ZY, Hou Z, Xue KH, Tian H, Lu T, Xue J, Wu F, Zhao R, Shao M, Yan J, Yan A, Wang Z, Shen P, Zhao M, Miao X, Lin Z, Liu H, Yang Y, Ren TL. Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303734. [PMID: 37814361 DOI: 10.1002/advs.202303734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 08/22/2023] [Indexed: 10/11/2023]
Abstract
Two-dimensional material-based field-effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM-FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi-Fermi-level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer-QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM-FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non-monotonic drain conductance characteristics. A three-bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM-FET-based integrated circuits.
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Affiliation(s)
- Zhao-Yi Yan
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhan Hou
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Kan-Hao Xue
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - He Tian
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian Lu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Junying Xue
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Fan Wu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Ruiting Zhao
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Minghao Shao
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Jianlan Yan
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Anzhi Yan
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhenze Wang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Penghui Shen
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Mingyue Zhao
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Zhaoyang Lin
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Houfang Liu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yi Yang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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25
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Wang L, Guo Z, Lan Q, Song W, Zhong Z, Yang K, Zhao T, Huang H, Zhang C, Shi W. Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics. MICROMACHINES 2023; 14:2125. [PMID: 38004982 PMCID: PMC10673063 DOI: 10.3390/mi14112125] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 11/17/2023] [Accepted: 11/18/2023] [Indexed: 11/26/2023]
Abstract
Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we present an electron-beam (e-beam) doping approach to achieve controllable carrier doping effects in graphene and MoS2 field-effect transistors (FETs) by leveraging charge-trapping oxide dielectrics. By adding an atomic layer deposition (ALD)-grown Al2O3 dielectric layer on top of the SiO2/Si substrate, we demonstrate that controllable and reversible carrier doping effects can be effectively induced in graphene and MoS2 FETs through e-beam doping. This new device configuration establishes an oxide interface that enhances charge-trapping capabilities, enabling the effective induction of electron and hole doping beyond the SiO2 breakdown limit using high-energy e-beam irradiation. Importantly, these high doping effects exhibit non-volatility and robust stability in both vacuum and air environments for graphene FET devices. This methodology enhances carrier modulation capabilities in 2D materials and holds great potential for advancing the development of scalable 2D nano-devices.
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Affiliation(s)
- Lu Wang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Zejing Guo
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Qing Lan
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Wenqing Song
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Zhipeng Zhong
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, China
| | - Kunlin Yang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Tuoyu Zhao
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Hai Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Wu Shi
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
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26
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John JW, Mishra A, Debbarma R, Verzhbitskiy I, Goh KEJ. Probing charge traps at the 2D semiconductor/dielectric interface. NANOSCALE 2023; 15:16818-16835. [PMID: 37842965 DOI: 10.1039/d3nr03453d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps, Dit, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify Dit at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of Dit at 2D semiconductor/dielectric interfaces.
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Affiliation(s)
- John Wellington John
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Abhishek Mishra
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Rousan Debbarma
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Ivan Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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27
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Guan Y, Ding Y, Fang Y, Wang G, Zhao S, Wang L, Huang J, Chen M, Hao J, Xu C, Zhen L, Huang F, Li Y, Yang L. Femtosecond Laser-Driven Phase Engineering of WS 2 for Nano-Periodic Phase Patterning and Sub-ppm Ammonia Gas Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303654. [PMID: 37415518 DOI: 10.1002/smll.202303654] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Revised: 06/19/2023] [Indexed: 07/08/2023]
Abstract
Laser-driven phase transition of 2D transition metal dichalcogenides has attracted much attention due to its high flexibility and rapidity. However, there are some limitations during the laser irradiation process, especially the unsatisfied surface ablation, the inability of nanoscale phase patterning, and the unexploited physical properties of new phase. In this work, the well-controlled femtosecond (fs) laser-driven transformation from the metallic 2M-WS2 to the semiconducting 2H-WS2 is reported, which is confirmed to be a single-crystal to single-crystal transition without layer thinning or obvious ablation. Moreover, a highly ordered 2H/2M nano-periodic phase transition with a resolution of ≈435 nm is achieved, breaking through the existing size bottleneck of laser-driven phase transition, which is attributed to the selective deposition of plasmon energy induced by fs laser. It is also demonstrated that the achieved 2H-WS2 after laser irradiation contains rich sulfur vacancies, which exhibits highly competitive ammonia gas sensing performance, with a detection limit below 0.1 ppm and a fast response/recovery time of 43/67 s at room temperature. This study provides a new strategy for the preparation of the phase-selective transition homojunction and high-performance applications in electronics.
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Affiliation(s)
- Yanchao Guan
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Ye Ding
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Genwang Wang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Shouxin Zhao
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Lianfu Wang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Jingtao Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Mengxin Chen
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Chengyan Xu
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yang Li
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Lijun Yang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
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28
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Lee JA, Yoon J, Hwang S, Hwang H, Kwon JD, Lee SK, Kim Y. Integrated Logic Circuits Based on Wafer-Scale 2D-MoS 2 FETs Using Buried-Gate Structures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2870. [PMID: 37947714 PMCID: PMC10649149 DOI: 10.3390/nano13212870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 10/20/2023] [Accepted: 10/25/2023] [Indexed: 11/12/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array.
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Affiliation(s)
- Ju-Ah Lee
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jongwon Yoon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Seungkwon Hwang
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Hyunsang Hwang
- Center for Single Atom-Based Semiconductor Device, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea;
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Seung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
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29
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Oberoi A, Han Y, Stepanoff SP, Pannone A, Sun Y, Lin YC, Chen C, Shallenberger JR, Zhou D, Terrones M, Redwing JM, Robinson JA, Wolfe DE, Yang Y, Das S. Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping. ACS NANO 2023; 17:19709-19723. [PMID: 37812500 DOI: 10.1021/acsnano.3c03060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/11/2023]
Abstract
n-type field effect transistors (FETs) based on two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as MoS2 and WS2 have come close to meeting the requirements set forth in the International Roadmap for Devices and Systems (IRDS). However, p-type 2D FETs are dramatically lagging behind in meeting performance standards. Here, we adopt a three-pronged approach that includes contact engineering, channel length (Lch) scaling, and monolayer doping to achieve high performance p-type FETs based on synthetic WSe2. Using electrical measurements backed by atomistic imaging and rigorous analysis, Pd was identified as the favorable contact metal for WSe2 owing to better epitaxy, larger grain size, and higher compressive strain, leading to a lower Schottky barrier height. While the ON-state performance of Pd-contacted WSe2 FETs was improved by ∼10× by aggressively scaling Lch from 1 μm down to ∼20 nm, ultrascaled FETs were found to be contact limited. To reduce the contact resistance, monolayer tungsten oxyselenide (WOxSey) obtained using self-limiting oxidation of bilayer WSe2 was used as a p-type dopant. This led to ∼5× improvement in the ON-state performance and ∼9× reduction in the contact resistance. We were able to achieve a median ON-state current as high as ∼10 μA/μm for ultrascaled and doped p-type WSe2 FETs with Pd contacts. We also show the applicability of our monolayer doping strategy to other 2D materials such as MoS2, MoTe2, and MoSe2.
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Affiliation(s)
- Aaryan Oberoi
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Ying Han
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Sergei P Stepanoff
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory, Penn State University, University Park, Pennsylvania 16802, United States
| | - Andrew Pannone
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Yongwen Sun
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu City 300093, Taiwan
| | - Chen Chen
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, Pennsylvania 16802, United States
| | - Jeffrey R Shallenberger
- Materials Characterization Laboratory, Penn State University, University Park, Pennsylvania 16802, United States
| | - Da Zhou
- Department of Physics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, Penn State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, Penn State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, Penn State University, University Park, Pennsylvania 16802, United States
| | - Douglas E Wolfe
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory, Penn State University, University Park, Pennsylvania 16802, United States
| | - Yang Yang
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, Penn State University, University Park, Pennsylvania 16802, United States
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30
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Vrinda Narayanan P, Majumder S, Gokul MA, Taneja C, Kumar GVP, Rahman A. Improving the optoelectronic properties of monolayer MoS 2field effect transistor through dielectric engineering. NANOTECHNOLOGY 2023; 34:505713. [PMID: 37708882 DOI: 10.1088/1361-6528/acf9aa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Accepted: 09/14/2023] [Indexed: 09/16/2023]
Abstract
The reduced dielectric screening in atomically thin two-dimensional materials makes them very sensitive to the surrounding environment, which can be modulated to tune their optoelectronic properties. In this study, we significantly improved the optoelectronic properties of monolayer MoS2by varying the surrounding environment using different liquid dielectrics, each with a specific dielectric constant ranging from 1.89 to 18. Liquid mediums offer the possibility of environment tunability on the same device. For a back-gated field effect transistor, the field effect mobility exhibited more than two-order enhancement when exposed to a high dielectric constant medium. Further investigation into the effect of the dielectric environment on the optoelectronic properties demonstrated a variation in photoresponse relaxation time with the dielectric medium. The rise and decay times were observed to increase and decrease, respectively, with an increase in the dielectric constant of the medium. These results can be attributed to the dielectric screening provided by the surrounding medium, which strongly modifies the charged impurity scattering, the band gap, and defect levels of monolayer MoS2. These findings have important implications for the design of biological and chemical sensors, particularly those operating in a liquid environment. By leveraging the tunability of the dielectric medium, we can optimize the performance of such sensors and enhance their detection capabilities.
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Affiliation(s)
- P Vrinda Narayanan
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - Sudipta Majumder
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - M A Gokul
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - Chetna Taneja
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - G V Pavan Kumar
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - Atikur Rahman
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
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31
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Romanov RI, Zabrosaev IV, Chouprik AA, Yakubovsky DI, Tatmyshevskiy MK, Volkov VS, Markeev AM. Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS 2 Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2712. [PMID: 37836353 PMCID: PMC10574732 DOI: 10.3390/nano13192712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Revised: 09/25/2023] [Accepted: 09/29/2023] [Indexed: 10/15/2023]
Abstract
Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.
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Affiliation(s)
- Roman I. Romanov
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Ivan V. Zabrosaev
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Anastasia A. Chouprik
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Dmitry I. Yakubovsky
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Valentyn S. Volkov
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Andrey M. Markeev
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
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32
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Das T, Youn S, Seo JE, Yang E, Chang J. Large-Scale Complementary Logic Circuit Enabled by Al 2O 3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:45116-45127. [PMID: 37713451 DOI: 10.1021/acsami.3c09351] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/17/2023]
Abstract
Achieving effective polarity control of n- and p-type transistors based on two-dimensional (2D) materials is a critical challenge in the process of integrating transition metal dichalcogenides (TMDC) into complementary metal-oxide semiconductor (CMOS) logic circuits. Herein, we utilized a proficient and nondestructive method of electron-charge transfer to achieve a complete carrier polarity conversion from p-to n-type by depositing a thin layer of aluminum oxide (Al2O3) onto tungsten diselenide (WSe2). By utilizing the Al2O3 passivation layer, we observed precisely tuned n-type behavior in contrast to transistors fabricated on the as-grown WSe2 film without any passivation layer, which display prominent p-type behavior. The polarity-transformed n-type WSe2 transistor from the pristine p-type shows the maximum ON current of ∼0.1 μA accompanied by a high electron mobility of 7 cm2 V-1 s-1 at a drain voltage (VDS) of 1 V. We successfully showcased a homogeneous CMOS inverter utilizing 2D-TMDC which exhibits an impressive voltage gain of 7 at VDD = 5 V. Moreover, this effective polarity control approach was further expanded upon to successfully demonstrate a range of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. The proposed methodology possesses significant promise for facilitating the advancement of high-density circuitry components utilizing 2D-TMDC.
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Affiliation(s)
- Tanmoy Das
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Sukhyeong Youn
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Jae Eun Seo
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Eunyeong Yang
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Jiwon Chang
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
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33
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Ghosh S, Pannone A, Sen D, Wali A, Ravichandran H, Das S. An all 2D bio-inspired gustatory circuit for mimicking physiology and psychology of feeding behavior. Nat Commun 2023; 14:6021. [PMID: 37758750 PMCID: PMC10533903 DOI: 10.1038/s41467-023-41046-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 08/21/2023] [Indexed: 09/29/2023] Open
Abstract
Animal behavior involves complex interactions between physiology and psychology. However, most AI systems neglect psychological factors in decision-making due to a limited understanding of the physiological-psychological connection at the neuronal level. Recent advancements in brain imaging and genetics have uncovered specific neural circuits that regulate behaviors like feeding. By developing neuro-mimetic circuits that incorporate both physiology and psychology, a new emotional-AI paradigm can be established that bridges the gap between humans and machines. This study presents a bio-inspired gustatory circuit that mimics adaptive feeding behavior in humans, considering both physiological states (hunger) and psychological states (appetite). Graphene-based chemitransistors serve as artificial gustatory taste receptors, forming an electronic tongue, while 1L-MoS2 memtransistors construct an electronic-gustatory-cortex comprising a hunger neuron, appetite neuron, and feeding circuit. This work proposes a novel paradigm for emotional neuromorphic systems with broad implications for human health. The concept of gustatory emotional intelligence can extend to other sensory systems, benefiting future humanoid AI.
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Affiliation(s)
- Subir Ghosh
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Dipanjan Sen
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Akshay Wali
- Electrical Engineering, Penn State University, University Park, PA, 16802, USA
| | | | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA.
- Electrical Engineering, Penn State University, University Park, PA, 16802, USA.
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA.
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34
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Sadaf MUK, Sakib NU, Pannone A, Ravichandran H, Das S. A bio-inspired visuotactile neuron for multisensory integration. Nat Commun 2023; 14:5729. [PMID: 37714853 PMCID: PMC10504285 DOI: 10.1038/s41467-023-40686-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 08/03/2023] [Indexed: 09/17/2023] Open
Abstract
Multisensory integration is a salient feature of the brain which enables better and faster responses in comparison to unisensory integration, especially when the unisensory cues are weak. Specialized neurons that receive convergent input from two or more sensory modalities are responsible for such multisensory integration. Solid-state devices that can emulate the response of these multisensory neurons can advance neuromorphic computing and bridge the gap between artificial and natural intelligence. Here, we introduce an artificial visuotactile neuron based on the integration of a photosensitive monolayer MoS2 memtransistor and a triboelectric tactile sensor which minutely captures the three essential features of multisensory integration, namely, super-additive response, inverse effectiveness effect, and temporal congruency. We have also realized a circuit which can encode visuotactile information into digital spiking events, with probability of spiking determined by the strength of the visual and tactile cues. We believe that our comprehensive demonstration of bio-inspired and multisensory visuotactile neuron and spike encoding circuitry will advance the field of neuromorphic computing, which has thus far primarily focused on unisensory intelligence and information processing.
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Affiliation(s)
| | - Najam U Sakib
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | | | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA.
- Electrical Engineering, Penn State University, University Park, PA, 16802, USA.
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA.
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35
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Rangnekar SV, Sangwan VK, Jin M, Khalaj M, Szydłowska BM, Dasgupta A, Kuo L, Kurtz HE, Marks TJ, Hersam MC. Electroluminescence from Megasonically Solution-Processed MoS 2 Nanosheet Films. ACS NANO 2023; 17:17516-17526. [PMID: 37606956 DOI: 10.1021/acsnano.3c06034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
Due to their superior optoelectronic properties, monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for electroluminescent devices. However, challenges in isolating optoelectronically active TMD monolayers using scalable liquid phase exfoliation have precluded electroluminescence in large-area, solution-processed TMD films. Here, we overcome these limitations and demonstrate electroluminescence from molybdenum disulfide (MoS2) nanosheet films by employing a monolayer-rich MoS2 ink produced by electrochemical intercalation and megasonic exfoliation. Characteristic monolayer MoS2 photoluminescence and electroluminescence spectral peaks at 1.88-1.90 eV are observed in megasonicated MoS2 films, with the emission intensity increasing with film thickness over the range 10-70 nm. Furthermore, employing a vertical light-emitting capacitor architecture enables uniform electroluminescence in large-area devices. These results indicate that megasonically exfoliated MoS2 monolayers retain their direct bandgap character in electrically percolating thin films even following multistep solution processing. Overall, this work establishes megasonicated MoS2 inks as an additive manufacturing platform for flexible, patterned, and miniaturized light sources that can likely be expanded to other TMD semiconductors.
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Affiliation(s)
- Sonal V Rangnekar
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mengru Jin
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Maryam Khalaj
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Beata M Szydłowska
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Anushka Dasgupta
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Lidia Kuo
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Heather E Kurtz
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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36
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Shendokar S, Aryeetey F, Hossen MF, Ignatova T, Aravamudhan S. Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide. MICROMACHINES 2023; 14:1758. [PMID: 37763921 PMCID: PMC10537635 DOI: 10.3390/mi14091758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 09/05/2023] [Accepted: 09/06/2023] [Indexed: 09/29/2023]
Abstract
Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.
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Affiliation(s)
- Sachin Shendokar
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| | - Frederick Aryeetey
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| | - Moha Feroz Hossen
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| | - Tetyana Ignatova
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoscience, University of North Carolina at Greensboro, 1400 Spring Garden St., Greensboro, NC 27412, USA
| | - Shyam Aravamudhan
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
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37
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Kim KH, Oh S, Fiagbenu MMA, Zheng J, Musavigharavi P, Kumar P, Trainor N, Aljarb A, Wan Y, Kim HM, Katti K, Song S, Kim G, Tang Z, Fu JH, Hakami M, Tung V, Redwing JM, Stach EA, Olsson RH, Jariwala D. Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. NATURE NANOTECHNOLOGY 2023; 18:1044-1050. [PMID: 37217764 DOI: 10.1038/s41565-023-01399-y] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 04/13/2023] [Indexed: 05/24/2023]
Abstract
Three-dimensional monolithic integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrent with enhanced energy efficiency in big data applications such as artificial intelligence. Despite decades of efforts, there remains an urgent need for reliable, compact, fast, energy-efficient and scalable memory devices. Ferroelectric field-effect transistors (FE-FETs) are a promising candidate, but requisite scalability and performance in a back-end-of-line process have proven challenging. Here we present back-end-of-line-compatible FE-FETs using two-dimensional MoS2 channels and AlScN ferroelectric materials, all grown via wafer-scalable processes. A large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios greater than 107 and ON-current density greater than 250 μA um-1, all at ~80 nm channel length are demonstrated. The FE-FETs show stable retention up to 10 years by extension, and endurance greater than 104 cycles in addition to 4-bit pulse-programmable memory features, thereby opening a path towards the three-dimensional heterointegration of a two-dimensional semiconductor memory with silicon complementary metal-oxide-semiconductor logic.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, Ansan, South Korea
| | | | - Jeffrey Zheng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Pariasadat Musavigharavi
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Pawan Kumar
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Nicholas Trainor
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Areej Aljarb
- Department of Physics, King Abdulaziz University, Jeddah, Saudi Arabia
| | - Yi Wan
- Department of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
| | - Hyong Min Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Keshava Katti
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Gwangwoo Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Zichen Tang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Jui-Han Fu
- Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan
| | - Mariam Hakami
- Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan
| | - Vincent Tung
- Department of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
- Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan
| | - Joan M Redwing
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Eric A Stach
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Roy H Olsson
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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38
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Wang J, Lu M, Chen Y, Hao G, Liu B, Tang P, Yu L, Wen L, Ji H. Machine Learning-Assisted Large-Area Preparation of MoS 2 Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2283. [PMID: 37630868 PMCID: PMC10459608 DOI: 10.3390/nano13162283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 08/05/2023] [Accepted: 08/07/2023] [Indexed: 08/27/2023]
Abstract
Molybdenum disulfide (MoS2) is a layered transition metal-sulfur compound semiconductor that shows promising prospects for applications in optoelectronics and integrated circuits because of its low preparation cost, good stability and excellent physicochemical, biological and mechanical properties. MoS2 with high quality, large size and outstanding performance can be prepared via chemical vapor deposition (CVD). However, its preparation process is complex, and the area of MoS2 obtained is difficult to control. Machine learning (ML), as a powerful tool, has been widely applied in materials science. Based on this, in this paper, a ML Gaussian regression model was constructed to explore the growth mechanism of MoS2 material prepared with the CVD method. The parameters of the regression model were evaluated by combining the four indicators of goodness of fit (r2), mean squared error (MSE), Pearson correlation coefficient (p) and p-value (p_val) of Pearson's correlation coefficient. After comprehensive comparison, it was found that the performance of the model was optimal when the number of iterations was 15. Additionally, feature importance analysis was conducted on the growth parameters using the established model. The results showed that the carrier gas flow rate (Fr), molybdenum sulfur ratio (R) and reaction temperature (T) had a crucial impact on the CVD growth of MoS2 materials. The optimal model was used to predict the size of molybdenum disulfide synthesis under 185,900 experimental conditions in the simulation dataset so as to select the optimal range for the synthesis of large-size molybdenum disulfide. Furthermore, the model prediction results were verified through literature and experimental results. It was found that the relative error between the prediction results and the literature and experimental results was small. These findings provide an effective solution to the preparation of MoS2 materials with a reduction in the time and cost of trial and error.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Haining Ji
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China; (J.W.); (M.L.); (Y.C.); (G.H.); (B.L.); (P.T.); (L.Y.); (L.W.)
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39
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Kim M, Kim S, Yoo H. Nanoscale Channel Gate-Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2208144. [PMID: 37096940 DOI: 10.1002/smll.202208144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Revised: 04/03/2023] [Indexed: 05/03/2023]
Abstract
Adhesion lithography offers to fabrication of coplanar asymmetric nanogap electrodes with a low-cost and facile process. In this study, a gate-tunable diode with coplanar asymmetric nanogap is fabricated using adhesion lithography. A fluoropolymer material is introduced to the adhesion lithography process to ensure a manufacturing patterning process yield as high as 96.7%. The asymmetric electrodes formed a built-in potential, leading to rectifying behavior. The coplanar electrode structure allowed the use of a gate electrode in vertical contact with the channel, resulting in gate-tunable diode characteristics. The nanoscale channel induced a high current density (3.38 × 10-7 A∙cm-1 ), providing a high rectification ratio (1.67 × 105 A∙A-1 ). This rectifier diode is confirmed to operate with pulsed input signals and suggests the gate-tunability of nanogap diodes.
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Affiliation(s)
- Minseo Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, South Korea
| | - Seongjae Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, South Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, South Korea
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40
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Ravichandran H, Knobloch T, Pannone A, Karl A, Stampfer B, Waldhoer D, Zheng Y, Sakib NU, Karim Sadaf MU, Pendurthi R, Torsi R, Robinson JA, Grasser T, Das S. Observation of Rich Defect Dynamics in Monolayer MoS 2. ACS NANO 2023. [PMID: 37490390 DOI: 10.1021/acsnano.2c12900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Defects play a pivotal role in limiting the performance and reliability of nanoscale devices. Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors such as monolayer MoS2 are no exception. Probing defect dynamics in 2D FETs is therefore of significant interest. Here, we present a comprehensive insight into various defect dynamics observed in monolayer MoS2 FETs at varying gate biases and temperatures. The measured source-to-drain currents exhibit random telegraph signals (RTS) owing to the transfer of charges between the semiconducting channel and individual defects. Based on the modeled temperature and gate bias dependence, oxygen vacancies or aluminum interstitials are probable defect candidates. Several types of RTSs are observed including anomalous RTS and giant RTS indicating local current crowding effects and rich defect dynamics in monolayer MoS2 FETs. This study explores defect dynamics in large area-grown monolayer MoS2 with ALD-grown Al2O3 as the gate dielectric.
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Affiliation(s)
- Harikrishnan Ravichandran
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Theresia Knobloch
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria
| | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Alexander Karl
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria
| | - Bernhard Stampfer
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria
| | - Dominic Waldhoer
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria
| | - Yikai Zheng
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Najam U Sakib
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Muhtasim Ul Karim Sadaf
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Rahul Pendurthi
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Riccardo Torsi
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, Penn State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Tibor Grasser
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States
- Electrical Engineering, Penn State University, University Park, Pennsylvania 16802, United States
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41
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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42
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Bachu S, Kowalik M, Huet B, Nayir N, Dwivedi S, Hickey DR, Qian C, Snyder DW, Rotkin SV, Redwing JM, van Duin ACT, Alem N. Role of Bilayer Graphene Microstructure on the Nucleation of WSe 2 Overlayers. ACS NANO 2023. [PMID: 37368885 DOI: 10.1021/acsnano.2c12621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD) overlayers. The resulting two-dimensional (2D) TMD/graphene vertical heterostructures are attractive for optoelectronic and energy applications. However, the effects of the microstructural heterogeneities of graphene grown by CVD on the growth of the TMD overlayers are relatively unknown. Here, we present a detailed investigation of how the stacking order and twist angle of CVD graphene influence the nucleation of WSe2 triangular crystals. Through the combination of experiments and theory, we correlate the presence of interlayer dislocations in bilayer graphene with how WSe2 nucleates, in agreement with the observation of a higher nucleation density of WSe2 on top of Bernal-stacked bilayer graphene versus twisted bilayer graphene. Scanning/transmission electron microscopy (S/TEM) data show that interlayer dislocations are present only in Bernal-stacked bilayer graphene but not in twisted bilayer graphene. Atomistic ReaxFF reactive force field molecular dynamics simulations reveal that strain relaxation promotes the formation of these interlayer dislocations with localized buckling in Bernal-stacked bilayer graphene, whereas the strain becomes distributed in twisted bilayer graphene. Furthermore, these localized buckles in graphene are predicted to serve as thermodynamically favorable sites for binding WSex molecules, leading to the higher nucleation density of WSe2 on Bernal-stacked graphene. Overall, this study explores synthesis-structure correlations in the WSe2/graphene vertical heterostructure system toward the site-selective synthesis of TMDs by controlling the structural attributes of the graphene substrate.
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Affiliation(s)
- Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Malgorzata Kowalik
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Benjamin Huet
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory (ARL), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nadire Nayir
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmetbey University, Karaman, Turkey 7000
| | - Swarit Dwivedi
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Danielle Reifsnyder Hickey
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chenhao Qian
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - David W Snyder
- Applied Research Laboratory (ARL), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Slava V Rotkin
- Materials Research Institute and Department of Engineering Science & Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium (2DCC), Materials Research Institute (MRI), The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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43
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Azam N, Mahjouri-Samani M. Time-Resolved Growth of 2D WSe 2 Monolayer Crystals. ACS NANO 2023. [PMID: 37339265 DOI: 10.1021/acsnano.3c02280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Understanding and controlling the growth evolution of atomically thin monolayer two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) are vital for next-generation 2D electronics and optoelectronic devices. However, their growth kinetics are not fully observed or well understood due to the bottlenecks associated with the existing synthesis methods. This study demonstrates the time-resolved and ultrafast growth of 2D materials by a laser-based synthesis approach that enables the rapid initiation and termination of the vaporization process during crystal growth. The use of stoichiometric powder (e.g., WSe2) minimizes the complex chemistry during the vaporization and growth process, allowing rapid initiation/termination control over the generated flux. An extensive set of experiments is performed to understand the growth evolution, achieving subsecond growth as low as 10 ms along with a 100 μm/s growth rate on a noncatalytic substrate such as Si/SiO2. Overall, this study allows us to observe and understand the 2D crystal evolution and growth kinetics with time-resolved and subsecond time scales.
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Affiliation(s)
- Nurul Azam
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
| | - Masoud Mahjouri-Samani
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
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44
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Li H, Yang J, Li X, Luo Q, Cheng M, Feng W, Du R, Wang Y, Song L, Wen X, Wen Y, Xiao M, Liao L, Zhang Y, Shi J, He J. Bridging Synthesis and Controllable Doping of Monolayer 4 in. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211536. [PMID: 36929175 DOI: 10.1002/adma.202211536] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 03/07/2023] [Indexed: 06/09/2023]
Abstract
Epitaxial growth and controllable doping of wafer-scale atomically thin semiconductor single crystals are two central tasks to tackle the scaling challenge of transistors. Despite considerable efforts are devoted, addressing such crucial issues simultaneously under 2D confinement is yet to be realized. Here, an ingenious strategy to synthesize record-breaking 4 in. length Fe-doped transition-metal dichalcogenides (TMDCs) single crystals on industry-compatible c-plane sapphire without special miscut angle is designed. Atomically thin transistors with high electron mobility (≈146 cm2 V-1 s-1 ) and remarkable on/off current ratio (≈109 ) are fabricated based on 4 in. length Fe-MoS2 single crystals, due to the ultralow contact resistance (≈489 Ω µm). In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional alignment TMDCs domains (>99%). This work represents a substantial leap in terms of bridging synthesis and doping of wafer-scale 2D semiconductor single crystals, which should promote the further device downscaling and extension of Moore's law.
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Affiliation(s)
- Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Quankun Luo
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Lei Liao
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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45
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Ulian G, Valdrè G. Structural, elastic, electronic, optical and vibrational properties of single-layered, bilayered and bulk molybdenite MoS 2-2H. J Appl Crystallogr 2023; 56:611-623. [PMID: 37284254 PMCID: PMC10241059 DOI: 10.1107/s1600576723002571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 03/17/2023] [Indexed: 06/08/2023] Open
Abstract
In recent years, transition metal dichalcogenides have received great attention since they can be prepared as two-dimensional semiconductors, presenting heterodesmic structures incorporating strong in-plane covalent bonds and weak out-of-plane interactions, with an easy cleavage/exfoliation in single or multiple layers. In this context, molybdenite, the mineralogical name of molybdenum disulfide, MoS2, has drawn much attention because of its very promising physical properties for optoelectronic applications, in particular a band gap that can be tailored with the material's thickness, optical absorption in the visible region and strong light-matter interactions due to the planar exciton confinement effect. Despite this wide interest and the numerous experimental and theoretical articles in the literature, these report on just one or two specific features of bulk and layered MoS2 and sometimes provide conflicting results. For these reasons, presented here is a thorough theoretical analysis of the different aspects of bulk, monolayer and bilayer MoS2 within the density functional theory (DFT) framework and with the DFT-D3 correction to account for long-range interactions. The crystal chemistry, stiffness, and electronic, dielectric/optical and phonon properties of single-layered, bilayered and bulk molybdenite have been investigated, to obtain a consistent and detailed set of data and to assess the variations and cross correlation from the bulk to single- and double-layer units. The simulations show the indirect-direct transition of the band gap (K-K' in the first Brillouin zone) from the bulk to the single-layer structure, which however reverts to an indirect transition when a bilayer is considered. In general, the optical properties are in good agreement with previous experimental measurements using spectroscopic ellipsometry and reflectivity, and with preliminary theoretical simulations.
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Affiliation(s)
- Gianfranco Ulian
- Biological, Geological and Environmental Sciences, University of Bologna, P. Porta San Donato 1, Bologna, Emilia-Romagna 40127, Italy
- Interdisciplinary Centre of Biomineralogy, Crystallography and Biomaterials, University of Bologna, P. Porta San Donato 1, Bologna, Emilia-Romagna 40127, Italy
| | - Giovanni Valdrè
- Biological, Geological and Environmental Sciences, University of Bologna, P. Porta San Donato 1, Bologna, Emilia-Romagna 40127, Italy
- Interdisciplinary Centre of Biomineralogy, Crystallography and Biomaterials, University of Bologna, P. Porta San Donato 1, Bologna, Emilia-Romagna 40127, Italy
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46
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Guo X, Yang H, Mo X, Bai R, Wang Y, Han Q, Han S, Sun Q, Zhang DW, Hu S, Ji L. Modulated wafer-scale WS 2 films based on atomic-layer-deposition for various device applications. RSC Adv 2023; 13:14841-14848. [PMID: 37197184 PMCID: PMC10184003 DOI: 10.1039/d3ra00933e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Accepted: 05/09/2023] [Indexed: 05/19/2023] Open
Abstract
Tungsten disulfide (WS2) is promising for potential applications in transistors and gas sensors due to its high mobility and high adsorption of gas molecules onto edge sites. This work comprehensively studied the deposition temperature, growth mechanism, annealing conditions, and Nb doping of WS2 to prepare high-quality wafer-scale N- and P-type WS2 films by atomic layer deposition (ALD). It shows that the deposition and annealing temperature greatly influence the electronic properties and crystallinity of WS2, and insufficient annealing will seriously reduce the switch ratio and on-state current of the field effect transistors (FETs). Besides, the morphologies and carrier types of WS2 films can be controlled by adjusting the processes of ALD. The obtained WS2 films and the films with vertical structures were used to fabricate FETs and gas sensors, respectively. Among them, the Ion/Ioff ratio of N- and P-type WS2 FETs is 105 and 102, respectively, and the response of N- and P-type gas sensors is 14% and 42% under 50 ppm NH3 at room temperature, respectively. We have successfully demonstrated a controllable ALD process to modify the morphology and doping behavior of WS2 films with various device functionalities based on acquisitive characteristics.
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Affiliation(s)
- Xiangyu Guo
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Hanjie Yang
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Xichao Mo
- School of Physical Science and Technology, Lanzhou University Lanzhou 730000 China
| | - Rongxu Bai
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Yanrong Wang
- School of Physical Science and Technology, Lanzhou University Lanzhou 730000 China
| | - Qi Han
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Sheng Han
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Qingqing Sun
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - David W Zhang
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Shen Hu
- School of Microelectronics, Fudan University Shanghai 200433 China
- Jiashan Fudan Institute Jiashan 314100 China
| | - Li Ji
- School of Microelectronics, Fudan University Shanghai 200433 China
- Hubei Yangtz Memory Laboratories Wuhan 430205 China
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47
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Hyun D, Kim J, Ko H, Shin Y, Park J, Bak S, Lee J, Yang J, Boo JH, Lee H. One-Step Synthesis of Transition Metal Dichalcogenide Quantum Dots Using Only Alcohol Solvents for Indoor-Light Photocatalytic Antibacterial Activity. ACS APPLIED BIO MATERIALS 2023; 6:1970-1980. [PMID: 37134284 DOI: 10.1021/acsabm.3c00176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
In this study, we report a one-step direct synthesis of molybdenum disulfide (MoS2) and tungsten disulfide (WS2) quantum dots (QDs) through a solvothermal reaction using only alcohol solvents and efficient Escherichia coli (E. coli) decompositions as photocatalytic antibacterial agents under visible light irradiation. The solvothermal reaction gives the scission of molybdenum-sulfur (Mo-S) and tungsten-sulfur (W-S) bonding during the synthesis of MoS2 and WS2 QDs. Using only alcohol solvent does not require a residue purification process necessary for metal intercalation. As the number of the CH3 groups of alcohol solvents among ethyl, isopropyl, and tert(t)-butyl alcohols increases, the dispersibility of MoS2/WS2 increases. The CH3 groups of alcohols minimize the surface energy, leading to the effective exfoliation and disintegration of the bulk under heat and pressure. The bulky t-butyl alcohol with the highest number of methyl groups shows the highest exfoliation and yield. MoS2 QDs with a lateral size of about 2.5 nm and WS2 QDs of about 10 nm are prepared, exhibiting a strong blue luminescence under 365 nm ultraviolet (UV) light irradiation. Their heights are 0.68-3 and 0.72-5 nm, corresponding to a few layers of MoS2 and WS2, respectively. They offer a highly efficient performance in sterilizing E. coli as the visible-light-driven photocatalyst.
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Affiliation(s)
- Daesun Hyun
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Joosung Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Korea
| | - Hyun Ko
- Department of Biophysics, Sungkyunkwan University, Suwon 16419, Korea
| | - Yonghun Shin
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Jintaek Park
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Korea
| | - Sora Bak
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Korea
| | - Jihun Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Korea
| | - Junghee Yang
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Korea
| | - Jin-Hyo Boo
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyoyoung Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Korea
- Department of Biophysics, Sungkyunkwan University, Suwon 16419, Korea
- Creative Research Institute, Sungkyunkwan University, Suwon 16419, Korea
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48
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Wali A, Ravichandran H, Das S. Hardware Trojans based on two-dimensional memtransistors. NANOSCALE HORIZONS 2023; 8:603-615. [PMID: 37021644 DOI: 10.1039/d2nh00568a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Hardware Trojans (HTs) have emerged as a major security threat for integrated circuits (ICs) owing to the involvement of untrustworthy actors in the globally distributed semiconductor supply chain. HTs are intentional malicious modifications, which remain undetectable through simple electrical measurements but can cause catastrophic failure in the functioning of ICs in mission critical applications. In this article, we show how two-dimensional (2D) material based in-memory computing elements such as memtransistors can be used as hardware Trojans. We found that logic gates based on 2D memtransistors can be made to malfunction by exploiting their inherent programming capabilities. While we use 2D memtransistor-based ICs as the testbed for our demonstration, the results are equally applicable to any state-of-the-art and emerging in-memory computing technologies.
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Affiliation(s)
- Akshay Wali
- Electrical Engineering and Computer Science, Penn State University, University Park, PA 16802, USA.
| | | | - Saptarshi Das
- Electrical Engineering and Computer Science, Penn State University, University Park, PA 16802, USA.
- Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA 16802, USA
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49
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Suzuki H, Kishibuchi M, Misawa M, Shimogami K, Ochiai S, Kokura T, Liu Y, Hashimoto R, Liu Z, Tsuruta K, Miyata Y, Hayashi Y. Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires. ACS NANO 2023; 17:9455-9467. [PMID: 37127554 DOI: 10.1021/acsnano.3c01608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for next-generation optoelectronic devices; they can also provide opportunities for further advances in physics. Structuring 2D TMDC sheets as nanoribbons has tremendous potential for electronic state modification. However, a bottom-up synthesis of long TMDC nanoribbons with high monolayer selectivity on a large scale has not yet been reported yet. In this study, we successfully synthesized long WxOy nanowires and grew monolayer WS2 nanoribbons on their surface. The supply of source atoms from a vapor-solid bilayer and chemical reaction at the atomic-scale interface promoted a self-limiting growth process. The developed method exhibited a high monolayer selection yield on a large scale and enabled the growth of long (∼100 μm) WS2 nanoribbons with electronic properties characterized by optical spectroscopy and electrical transport measurements. The produced nanoribbons were isolated from WxOy nanowires by mechanical exfoliation and used as channels for field-effect transistors. The findings of this study can be used in future optoelectronic device applications and advanced physics research.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Misaki Kishibuchi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kazuma Shimogami
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Soya Ochiai
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Takahiro Kokura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryoki Hashimoto
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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50
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Zhu J, Park JH, Vitale SA, Ge W, Jung GS, Wang J, Mohamed M, Zhang T, Ashok M, Xue M, Zheng X, Wang Z, Hansryd J, Chandrakasan AP, Kong J, Palacios T. Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform. NATURE NANOTECHNOLOGY 2023; 18:456-463. [PMID: 37106051 DOI: 10.1038/s41565-023-01375-6] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 03/11/2023] [Indexed: 05/21/2023]
Abstract
Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS2) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal-oxide-semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal-organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm2 V-1 s-1. Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.
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Affiliation(s)
- Jiadi Zhu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Steven A Vitale
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Wenjun Ge
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Gang Seob Jung
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Jiangtao Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Mohamed Mohamed
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Maitreyi Ashok
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Mantian Xue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zhien Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | - Anantha P Chandrakasan
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
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