1
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Demir AK, Li J, Zhang T, Occhialini CA, Nessi L, Song Q, Kong J, Comin R. Transferable Optical Enhancement Nanostructures by Gapless Stencil Lithography. NANO LETTERS 2024; 24:9882-9888. [PMID: 39093596 DOI: 10.1021/acs.nanolett.4c02148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
Optical spectroscopy techniques are central for the characterization of two-dimensional (2D) quantum materials. However, the reduced volume of atomically thin samples often results in a cross section that is far too low for conventional optical methods to produce measurable signals. In this work, we developed a scheme based on the stencil lithography technique to fabricate transferable optical enhancement nanostructures for Raman and photoluminescence spectroscopy. Equipped with this new nanofabrication technique, we designed and fabricated plasmonic nanostructures to tailor the interaction of few-layer materials with light. We demonstrate orders-of-magnitude increase in the Raman intensity of ultrathin flakes of 2D semiconductors and magnets as well as selective Purcell enhancement of quenched excitons in WSe2/MoS2 heterostructures. We provide evidence that the method is particularly effective for air-sensitive materials, as the transfer can be performed in situ. The fabrication technique can be generalized to enable a high degree of flexibility for functional photonic devices.
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Affiliation(s)
- Ahmet Kemal Demir
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jiaruo Li
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Connor A Occhialini
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Luca Nessi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Qian Song
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Riccardo Comin
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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3
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Karmakar A, Al-Mahboob A, Zawadzka N, Raczyński M, Yang W, Arfaoui M, Gayatri, Kucharek J, Sadowski JT, Shin HS, Babiński A, Pacuski W, Kazimierczuk T, Molas MR. Twisted MoSe 2 Homobilayer Behaving as a Heterobilayer. NANO LETTERS 2024; 24:9459-9467. [PMID: 39042710 PMCID: PMC11311526 DOI: 10.1021/acs.nanolett.4c01764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2024] [Revised: 07/11/2024] [Accepted: 07/11/2024] [Indexed: 07/25/2024]
Abstract
Heterostructures (HSs) formed by the transition-metal dichalcogenide materials have shown great promise in next-generation (opto)electronic applications. An artificially twisted HS allows us to manipulate the optical and electronic properties. In this work, we introduce the understanding of the energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle (∼57°) by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameter mismatch and indirect/direct (CVD/Exf.) bandgap nature. These effectively weaken the interlayer charge transfer and allow the ET to control the carrier recombination channels. Our experimental and theoretical results explain a massive HS photoluminescence enhancement due to an efficient ET process. This work shows that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a "true" heterobilayer nature.
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Affiliation(s)
- Arka Karmakar
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Abdullah Al-Mahboob
- Center
for Functional Nanomaterials, Brookhaven
National Laboratory, Upton, New York 11973, United States
| | - Natalia Zawadzka
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Mateusz Raczyński
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Weiguang Yang
- Department
of Chemistry, Ulsan National Institute of
Science and Technology, Ulsan 44919, Republic
of Korea
| | - Mehdi Arfaoui
- Département
de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire, 1060 Tunis, Tunisia
| | - Gayatri
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Julia Kucharek
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Jerzy T. Sadowski
- Center
for Functional Nanomaterials, Brookhaven
National Laboratory, Upton, New York 11973, United States
| | - Hyeon Suk Shin
- Department
of Chemistry, Ulsan National Institute of
Science and Technology, Ulsan 44919, Republic
of Korea
- Center
for 2D Quantum Heterostructures, Institute
for Basic Science (IBS), Suwon 16419, Republic
of Korea
- Department
of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Adam Babiński
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Wojciech Pacuski
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Tomasz Kazimierczuk
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Maciej R. Molas
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
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4
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Luo W, Song R, Whetten BG, Huang D, Cheng X, Belyanin A, Jiang T, Raschke MB. Nonlinear Nano-Imaging of Interlayer Coupling in 2D Graphene-Semiconductor Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307345. [PMID: 38279570 DOI: 10.1002/smll.202307345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 12/13/2023] [Indexed: 01/28/2024]
Abstract
The emergent electronic, spin, and other quantum properties of 2D heterostructures of graphene and transition metal dichalcogenides are controlled by the underlying interlayer coupling and associated charge and energy transfer dynamics. However, these processes are sensitive to interlayer distance and crystallographic orientation, which are in turn affected by defects, grain boundaries, or other nanoscale heterogeneities. This obfuscates the distinction between interlayer charge and energy transfer. Here, nanoscale imaging in coherent four-wave mixing (FWM) and incoherent two-photon photoluminescence (2PPL) is combined with a tip distance-dependent coupled rate equation model to resolve the underlying intra- and inter-layer dynamics while avoiding the influence of structural heterogeneities in mono- to multi-layer graphene/WSe2 heterostructures. With selective insertion of hBN spacer layers, it is shown that energy, as opposed to charge transfer, dominates the interlayer-coupled optical response. From the distinct nano-FWM and -2PPL tip-sample distance-dependent modification of interlayer and intralayer relaxation by tip-induced enhancement and quenching, an interlayer energy transfer time ofτ ET ≈ ( 0 . 35 - 0.15 + 0.65 ) $\tau _{\rm ET} \approx (0.35^{+0.65}_{-0.15})$ ps consistent with recent reports is derived. As a local probe technique, this approach highlights the ability to determine intrinsic sample properties even in the presence of large sample heterogeneity.
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Affiliation(s)
- Wenjin Luo
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Renkang Song
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Benjamin G Whetten
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Di Huang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Alexey Belyanin
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, 77843, USA
| | - Tao Jiang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Markus B Raschke
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
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5
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Tebbe D, Schütte M, Watanabe K, Taniguchi T, Stampfer C, Beschoten B, Waldecker L. Distance Dependence of the Energy Transfer Mechanism in WS_{2}-Graphene Heterostructures. PHYSICAL REVIEW LETTERS 2024; 132:196902. [PMID: 38804923 DOI: 10.1103/physrevlett.132.196902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 02/19/2024] [Accepted: 03/21/2024] [Indexed: 05/29/2024]
Abstract
We report on the mechanism of energy transfer in Van der Waals heterostructures of the two-dimensional semiconductor WS_{2} and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (h-BN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 and 5.8 nm (0-16 h-BN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a Förster transfer process, with an additional contribution from a Dexter process at 0.5 nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1 nm can be quantitatively described using recently reported values of the Förster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and, furthermore, depend on excess energy as well as on excitation density. Since the transfer probability of the Förster mechanism depends on the momentum of electron-hole pairs, we conclude that, at these distances, the transfer is driven by nonrelaxed charge carrier distributions.
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Affiliation(s)
- David Tebbe
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - Marc Schütte
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
| | - K Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Christoph Stampfer
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Bernd Beschoten
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, 52074 Aachen, Germany
| | - Lutz Waldecker
- 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany
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6
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Chuang HJ, Stevens CE, Rosenberger MR, Lee SJ, McCreary KM, Hendrickson JR, Jonker BT. Enhancing Single Photon Emission Purity via Design of van der Waals Heterostructures. NANO LETTERS 2024; 24:5529-5535. [PMID: 38668677 DOI: 10.1021/acs.nanolett.4c00683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2024]
Abstract
Quantum emitters are essential components of quantum photonic circuitry envisioned beyond the current optoelectronic state-of-the-art. Two dimensional materials are attractive hosts for such emitters. However, the high single photon purity required is rarely realized due to the presence of spectrally degenerate classical light originating from defects. Here, we show that design of a van der Waals heterostructure effectively eliminates this spurious light, resulting in purities suitable for a variety of quantum technological applications. Single photon purity from emitters in monolayer WSe2 increases from 60% to 92% by incorporating this monolayer in a simple graphite/WSe2 heterostructure. Fast interlayer charge transfer quenches a broad photoluminescence background by preventing radiative recombination through long-lived defect bound exciton states. This approach is generally applicable to other 2D emitter materials, circumvents issues of material quality, and offers a path forward to achieve the ultrahigh single photon purities ultimately required for photon-based quantum technologies.
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Affiliation(s)
- Hsun-Jen Chuang
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Christopher E Stevens
- KBR Inc., Beavercreek, Ohio 45431, United States
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | | | - Sung-Joon Lee
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Berend T Jonker
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
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7
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Celano U, Schmidt D, Beitia C, Orji G, Davydov AV, Obeng Y. Metrology for 2D materials: a perspective review from the international roadmap for devices and systems. NANOSCALE ADVANCES 2024; 6:2260-2269. [PMID: 38694454 PMCID: PMC11059534 DOI: 10.1039/d3na01148h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 03/30/2024] [Indexed: 05/04/2024]
Abstract
The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.
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Affiliation(s)
- Umberto Celano
- School of Electrical, Computer and Energy Engineering, Arizona State University Tempe AZ 85287 USA
| | | | - Carlos Beitia
- Unity-SC 611 Rue Aristide Berges 38330 Montbonnot-Saint-Martin France
| | - George Orji
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| | - Albert V Davydov
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| | - Yaw Obeng
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
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8
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Fickert M, Martinez-Haya R, Ruiz AM, Baldoví JJ, Abellán G. Exploring the effect of the covalent functionalization in graphene-antimonene heterostructures. RSC Adv 2024; 14:13758-13768. [PMID: 38681835 PMCID: PMC11046379 DOI: 10.1039/d4ra01029a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 03/24/2024] [Indexed: 05/01/2024] Open
Abstract
The growing field of two-dimensional (2D) materials has recently witnessed the emergence of heterostructures, however those combining monoelemental layered materials remain relatively unexplored. In this study, we present the chemical fabrication and characterization of a heterostructure formed by graphene and hexagonal antimonene. The interaction between these 2D materials is thoroughly examined through Raman spectroscopy and first-principles calculations, revealing that this can be considered as a van der Waals heterostructure. Furthermore, we have explored the influence of the antimonene 2D material on the reactivity of graphene by studying the laser-induced covalent functionalization of the graphene surface. Our findings indicate distinct degrees of functionalization based on the underlying material, SiO2 being more reactive than antimonene, opening the door for the development of controlled patterning in devices based on these heterostructures. This covalent functionalization implies a high control over the chemical information that can be stored but also removed on graphene surfaces, and its use as a patterned heterostructure based on antimonene and graphene. This research provides valuable insights into the antimonene-graphene interactions and their impact on the chemical reactivity during graphene covalent functionalization.
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Affiliation(s)
- M Fickert
- Department of Chemistry and Pharmacy, Joint Institute of Advanced Materials and Processes (ZMP), Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) Fürth 90762 Germany
| | - R Martinez-Haya
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - A M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - J J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - G Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
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9
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Woo SY, Shao F, Arora A, Schneider R, Wu N, Mayne AJ, Ho CH, Och M, Mattevi C, Reserbat-Plantey A, Moreno Á, Sheinfux HH, Watanabe K, Taniguchi T, Michaelis de Vasconcellos S, Koppens FHL, Niu Z, Stéphan O, Kociak M, García de Abajo FJ, Bratschitsch R, Konečná A, Tizei LHG. Engineering 2D Material Exciton Line Shape with Graphene/ h-BN Encapsulation. NANO LETTERS 2024; 24:3678-3685. [PMID: 38471109 DOI: 10.1021/acs.nanolett.3c05063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton line shape and charge state. Fano-like asymmetric spectral features are produced in WS2, MoSe2, and WSe2 van der Waals heterostructures combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe2/graphene with a neutral exciton red shift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
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Affiliation(s)
- Steffi Y Woo
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - Fuhui Shao
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Ashish Arora
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
- Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, 411008 Pune, India
| | - Robert Schneider
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Nianjheng Wu
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, 91405 Orsay, France
| | - Andrew J Mayne
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, 91405 Orsay, France
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Mauro Och
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Antoine Reserbat-Plantey
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- Université Côte d'Azur, CNRS, CRHEA, 06560 Valbonne, Sophia-Antipolis, France
| | - Álvaro Moreno
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
| | - Hanan Herzig Sheinfux
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- Department of Physics, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | | | - Frank H L Koppens
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Zhichuan Niu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Odile Stéphan
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - Mathieu Kociak
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - F Javier García de Abajo
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Andrea Konečná
- Central European Institute of Technology, Brno University of Technology, Brno 612 00, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Brno 616 69, Czech Republic
| | - Luiz H G Tizei
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
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10
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Koo Y, Moon T, Kang M, Joo H, Lee C, Lee H, Kravtsov V, Park KD. Dynamical control of nanoscale light-matter interactions in low-dimensional quantum materials. LIGHT, SCIENCE & APPLICATIONS 2024; 13:30. [PMID: 38272869 PMCID: PMC10810844 DOI: 10.1038/s41377-024-01380-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 11/26/2023] [Accepted: 01/10/2024] [Indexed: 01/27/2024]
Abstract
Tip-enhanced nano-spectroscopy and -imaging have significantly advanced our understanding of low-dimensional quantum materials and their interactions with light, providing a rich insight into the underlying physics at their natural length scale. Recently, various functionalities of the plasmonic tip expand the capabilities of the nanoscopy, enabling dynamic manipulation of light-matter interactions at the nanoscale. In this review, we focus on a new paradigm of the nanoscopy, shifting from the conventional role of imaging and spectroscopy to the dynamical control approach of the tip-induced light-matter interactions. We present three different approaches of tip-induced control of light-matter interactions, such as cavity-gap control, pressure control, and near-field polarization control. Specifically, we discuss the nanoscale modifications of radiative emissions for various emitters from weak to strong coupling regime, achieved by the precise engineering of the cavity-gap. Furthermore, we introduce recent works on light-matter interactions controlled by tip-pressure and near-field polarization, especially tunability of the bandgap, crystal structure, photoluminescence quantum yield, exciton density, and energy transfer in a wide range of quantum materials. We envision that this comprehensive review not only contributes to a deeper understanding of the physics of nanoscale light-matter interactions but also offers a valuable resource to nanophotonics, plasmonics, and materials science for future technological advancements.
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Affiliation(s)
- Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Taeyoung Moon
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Changjoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
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11
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Tran TT, Lee Y, Roy S, Tran TU, Kim Y, Taniguchi T, Watanabe K, Milošević MV, Lim SC, Chaves A, Jang JI, Kim J. Synergetic Enhancement of Quantum Yield and Exciton Lifetime of Monolayer WS 2 by Proximal Metal Plate and Negative Electric Bias. ACS NANO 2024; 18:220-228. [PMID: 38127273 DOI: 10.1021/acsnano.3c05667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.
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Affiliation(s)
- Trang Thu Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yongjun Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Shrawan Roy
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Uyen Tran
- Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Milorad V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso 78060-900, Brazil
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Andrey Chaves
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Departamento de Física, Universidade Federal do Ceará, Campus do Pici, C.P. 6030, 60455-900 Fortaleza, Ceará, Brazil
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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12
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Hötger A, Männer W, Amit T, Hernangómez-Pérez D, Taniguchi T, Watanabe K, Wurstbauer U, Finley JJ, Refaely-Abramson S, Kastl C, Holleitner AW. Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS 2. NANO LETTERS 2023; 23:11655-11661. [PMID: 38054904 DOI: 10.1021/acs.nanolett.3c03517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.
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Affiliation(s)
- Alexander Hötger
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
| | - Wolfgang Männer
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
| | - Tomer Amit
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Daniel Hernangómez-Pérez
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Ursula Wurstbauer
- Institute of Physics, Westfälische Wilhelms-Universität Münster, Münster 48149, Germany
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
| | - Sivan Refaely-Abramson
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Christoph Kastl
- Walter Schottky Institute and Physics Department, TU Munich, Garching 85748, Germany
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13
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Shan S, Huang J, Papadopoulos S, Khelifa R, Taniguchi T, Watanabe K, Wang L, Novotny L. Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides. NANO LETTERS 2023; 23:10908-10913. [PMID: 38048755 PMCID: PMC10722526 DOI: 10.1021/acs.nanolett.3c03155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 11/24/2023] [Accepted: 11/28/2023] [Indexed: 12/06/2023]
Abstract
Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature but consistent with exciton generation via a two-electron coherent tunneling process.
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Affiliation(s)
- Shengyu Shan
- Photonics
Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Jing Huang
- Photonics
Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | | | - Ronja Khelifa
- Photonics
Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Lujun Wang
- Photonics
Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Lukas Novotny
- Photonics
Laboratory, ETH Zürich, 8093 Zürich, Switzerland
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14
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Gupta G, Watanabe K, Taniguchi T, Majumdar K. Observation of ~100% valley-coherent excitons in monolayer MoS 2 through giant enhancement of valley coherence time. LIGHT, SCIENCE & APPLICATIONS 2023; 12:173. [PMID: 37443142 DOI: 10.1038/s41377-023-01220-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 06/16/2023] [Accepted: 06/27/2023] [Indexed: 07/15/2023]
Abstract
In monolayer transition metal dichalcogenide semiconductors, valley coherence degrades rapidly due to a combination of fast scattering and inter-valley exchange interaction. This leads to a sub-picosecond valley coherence time, making coherent manipulation of exciton a highly challenging task. Using monolayer MoS2 sandwiched between top and bottom graphene, here we demonstrate fully valley-coherent excitons by observing ~100% degree of linear polarization in steady state photoluminescence. This is achieved in this unique design through a combined effect of (a) suppression in exchange interaction due to enhanced dielectric screening, (b) reduction in exciton lifetime due to a fast inter-layer transfer to graphene, and (c) operating in the motional narrowing regime. We disentangle the role of the key parameters affecting valley coherence by using a combination of calculation (solutions of Bethe-Salpeter and Maialle-Silva-Sham equations) and a careful choice of design of experiments using four different stacks with systematic variation of screening and exciton lifetime. To the best of our knowledge, this is the first report in which the excitons are found to be valley coherent in the entire lifetime in monolayer semiconductors, allowing optical readout of valley coherence possible.
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Affiliation(s)
- Garima Gupta
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, India.
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15
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Hu Q, Zhan Z, Cui H, Zhang Y, Jin F, Zhao X, Zhang M, Wang Z, Zhang Q, Watanabe K, Taniguchi T, Cao X, Liu WM, Wu F, Yuan S, Xu Y. Observation of Rydberg moiré excitons. Science 2023; 380:1367-1372. [PMID: 37384701 DOI: 10.1126/science.adh1506] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 05/24/2023] [Indexed: 07/01/2023]
Abstract
Rydberg excitons, the solid-state counterparts of Rydberg atoms, have sparked considerable interest with regard to the harnessing of their quantum application potentials, but realizing their spatial confinement and manipulation poses a major challenge. Lately, the rise of two-dimensional moiré superlattices with highly tunable periodic potentials provides a possible pathway. Here, we experimentally demonstrate this capability through the spectroscopic evidence of Rydberg moiré excitons (XRM), which are moiré-trapped Rydberg excitons in monolayer semiconductor tungsten diselenide adjacent to twisted bilayer graphene. In the strong coupling regime, the XRM manifest as multiple energy splittings, pronounced red shift, and narrowed linewidth in the reflectance spectra, highlighting their charge-transfer character wherein electron-hole separation is enforced by strongly asymmetric interlayer Coulomb interactions. Our findings establish the excitonic Rydberg states as candidates for exploitation in quantum technologies.
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Affiliation(s)
- Qianying Hu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physics, Nankai University, Tianjin 300071, China
| | - Zhen Zhan
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Imdea Nanoscience, 28015 Madrid, Spain
| | - Huiying Cui
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yalei Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Feng Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuan Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingjie Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhichuan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qingming Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Xuewei Cao
- School of Physics, Nankai University, Tianjin 300071, China
| | - Wu-Ming Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Shengjun Yuan
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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16
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López LEP, Rosławska A, Scheurer F, Berciaud S, Schull G. Tip-induced excitonic luminescence nanoscopy of an atomically resolved van der Waals heterostructure. NATURE MATERIALS 2023; 22:482-488. [PMID: 36928383 DOI: 10.1038/s41563-023-01494-4] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
The electronic and optical properties of van der Waals heterostructures are strongly influenced by the structuration and homogeneity of their nano- and atomic-scale environments. Unravelling this intimate structure-property relationship is a key challenge that requires methods capable of addressing the light-matter interactions in van der Waals materials with ultimate spatial resolution. Here we use a low-temperature scanning tunnelling microscope to probe-with atomic-scale resolution-the excitonic luminescence of a van der Waals heterostructure, made of a transition metal dichalcogenide monolayer stacked onto a few-layer graphene flake supported by a Au(111) substrate. Sharp emission lines arising from neutral, charged and localized excitons are reported. Their intensities and emission energies vary as a function of the nanoscale topography of the van der Waals heterostructure, explaining the variability of the emission properties observed with diffraction-limited approaches. Our work paves the way towards understanding and controlling optoelectronic phenomena in moiré superlattices with atomic-scale resolution.
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Affiliation(s)
- Luis E Parra López
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France
| | - Anna Rosławska
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France
| | - Fabrice Scheurer
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France
| | - Stéphane Berciaud
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France.
| | - Guillaume Schull
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France.
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17
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Varade V, Haider G, Slobodeniuk A, Korytar R, Novotny T, Holy V, Miksatko J, Plsek J, Sykora J, Basova M, Zacek M, Hof M, Kalbac M, Vejpravova J. Chiral Light Emission from a Hybrid Magnetic Molecule-Monolayer Transition Metal Dichalcogenide Heterostructure. ACS NANO 2023; 17:2170-2181. [PMID: 36652711 PMCID: PMC10017025 DOI: 10.1021/acsnano.2c08320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 01/13/2023] [Indexed: 06/17/2023]
Abstract
Hybrid layered materials assembled from atomically thin crystals and small molecules bring great promises in pushing the current information and quantum technologies beyond the frontiers. We demonstrate here a class of layered valley-spin hybrid (VSH) materials composed of a monolayer two-dimensional (2D) semiconductor and double-decker single molecule magnets (SMMs). We have materialized a VSH prototype by thermal evaporation of terbium bis-phthalocyanine onto a MoS2 monolayer and revealed its composition and stability by both microscopic and spectroscopic probes. The interaction of the VSH components gives rise to the intersystem crossing of the photogenerated carriers and moderate p-doping of the MoS2 monolayer, as corroborated by the density functional theory calculations. We further explored the valley contrast by helicity-resolved photoluminescence (PL) microspectroscopy carried out down to liquid helium temperatures and in the presence of the external magnetic field. The most striking feature of the VSH is the enhanced A exciton-related valley emission observed at the out-of-resonance condition at room temperature, which we elucidated by the proposed nonradiative energy drain transfer mechanism. Our study thus demonstrates the experimental feasibility and great promises of the ultrathin VSH materials with chiral light emission, operable by physical fields for emerging opto-spintronic, valleytronic, and quantum information concepts.
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Affiliation(s)
- Vaibhav Varade
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Golam Haider
- J.
Heyrovsky Institute of Physical Chemistry, Dolejskova 3, 182
23Prague 8, Czech
Republic
| | - Artur Slobodeniuk
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Richard Korytar
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Tomas Novotny
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Vaclav Holy
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Jiri Miksatko
- J.
Heyrovsky Institute of Physical Chemistry, Dolejskova 3, 182
23Prague 8, Czech
Republic
| | - Jan Plsek
- J.
Heyrovsky Institute of Physical Chemistry, Dolejskova 3, 182
23Prague 8, Czech
Republic
| | - Jan Sykora
- J.
Heyrovsky Institute of Physical Chemistry, Dolejskova 3, 182
23Prague 8, Czech
Republic
| | - Miriam Basova
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Martin Zacek
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
| | - Martin Hof
- J.
Heyrovsky Institute of Physical Chemistry, Dolejskova 3, 182
23Prague 8, Czech
Republic
| | - Martin Kalbac
- J.
Heyrovsky Institute of Physical Chemistry, Dolejskova 3, 182
23Prague 8, Czech
Republic
| | - Jana Vejpravova
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech
Republic
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18
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Peña Román RJ, Bretel R, Pommier D, Parra López LE, Lorchat E, Boer-Duchemin E, Dujardin G, Borisov AG, Zagonel LF, Schull G, Berciaud S, Le Moal E. Tip-Induced and Electrical Control of the Photoluminescence Yield of Monolayer WS 2. NANO LETTERS 2022; 22:9244-9251. [PMID: 36458911 DOI: 10.1021/acs.nanolett.2c02142] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The photoluminescence (PL) of monolayer tungsten disulfide (WS2) is locally and electrically controlled using the nonplasmonic tip and tunneling current of a scanning tunneling microscope (STM). The spatial and spectral distribution of the emitted light is determined using an optical microscope. When the STM tip is engaged, short-range PL quenching due to near-field electromagnetic effects is present, independent of the sign and value of the bias voltage applied to the tip-sample tunneling junction. In addition, a bias-voltage-dependent long-range PL quenching is measured when the sample is positively biased. We explain these observations by considering the native n-doping of monolayer WS2 and the charge carrier density gradients induced by electron tunneling in micrometer-scale areas around the tip position. The combination of wide-field PL microscopy and charge carrier injection using an STM opens up new ways to explore the interplay between excitons and charge carriers in two-dimensional semiconductors.
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Affiliation(s)
- Ricardo Javier Peña Román
- Institute of Physics "Gleb Wataghin", Department of Applied Physics, State University of Campinas-UNICAMP, 13083-859 Campinas, Brazil
| | - Rémi Bretel
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Delphine Pommier
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Luis Enrique Parra López
- Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Etienne Lorchat
- Physics & Informatics (PHI) Laboratories, NTT Research, Inc., Sunnyvale, California 94085, United States
| | - Elizabeth Boer-Duchemin
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Gérald Dujardin
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Andrei G Borisov
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Luiz Fernando Zagonel
- Institute of Physics "Gleb Wataghin", Department of Applied Physics, State University of Campinas-UNICAMP, 13083-859 Campinas, Brazil
| | - Guillaume Schull
- Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Stéphane Berciaud
- Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Eric Le Moal
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
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19
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Hussain N, Ahmed S, Tepe HU, Huang K, Avishan N, He S, Rafique M, Farooq U, Kasirga TS, Bek A, Turan R, Shehzad K, Wu H, Wang Z. Ultra-Narrow Linewidth Photo-Emitters in Polymorphic Selenium Nanoflakes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204302. [PMID: 36251779 DOI: 10.1002/smll.202204302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/02/2022] [Indexed: 06/16/2023]
Abstract
Photoluminescence (PL) in state-of-the-art 2D materials suffers from narrow spectral coverage, relatively broad linewidths, and poor room-temperature (RT) functionality. The authors report ultra-narrow linewidth photo-emitters (ULPs) across the visible to near-infrared wavelength at RT in polymorphic selenium nanoflakes (SeNFs), synthesized via a hot-pressing strategy. Photo-emitters in NIR exhibit full width at half maximum (Γ) of 330 ± 90 µeV, an order of magnitude narrower than the reported ULPs in 2D materials at 300 K, and decrease to 82 ± 70 µeV at 100 K, with coherence time (τc ) of 21.3 ps. The capping substrate enforced spatial confinement during thermal expansion at 250 °C is believed to trigger a localized crystal symmetry breaking in SeNFs, causing a polymorphic transition from the semiconducting trigonal (t) to quasi-metallic orthorhombic (orth) phase. Fine structure splitting in orth-Se causes degeneracy in defect-associated bright excitons, resulting in ultra-sharp emission. Combined theoretical and experimental findings, an optimal biaxial compressive strain of -0.45% cm-1 in t-Se is uncovered, induced by the coefficient of thermal expansion mismatch at the selenium/sapphire interface, resulting in bandgap widening from 1.74 to 2.23 ± 0.1 eV. This report underpins the underlying correlation between crystal symmetry breaking induced polymorphism and RT ULPs in SeNFs, and their phase change characteristics.
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Affiliation(s)
- Naveed Hussain
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shehzad Ahmed
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hüseyin U Tepe
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Kai Huang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Nardin Avishan
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - ShiJie He
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Mohsin Rafique
- Division of Quantum State of Matter, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Umar Farooq
- Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Talip Serkan Kasirga
- Institute of Materials Science and Nanotechnology, Bilkent University UNAM, Ankara, 06800, Turkey
| | - Alpan Bek
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Rasit Turan
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
| | - Khurram Shehzad
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Colleges of ISEE and Microelectronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Institute, State Key Labs of Silicon Materials and Modern Optical Instruments, Zhejiang University, Hangzhou, 310058, China
| | - Hui Wu
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
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20
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Hennighausen Z, Hudak BM, Phillips M, Moon J, McCreary KM, Chuang HJ, Rosenberger MR, Jonker BT, Li CH, Stroud RM, van 't Erve OMJ. Room-Temperature Oxygen Transport in Nanothin Bi xO ySe z Enables Precision Modulation of 2D Materials. ACS NANO 2022; 16:13969-13981. [PMID: 36074972 DOI: 10.1021/acsnano.2c03367] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition-metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-generation optoelectronics. Here, we synthesize a few-nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion near room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling sub-micrometer features (e.g., pixels), and are long-term stable for more than 221 days. Our work suggests few-nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest that the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and sub-micrometer spatial resolution.
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Affiliation(s)
- Zachariah Hennighausen
- NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Bethany M Hudak
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Madeleine Phillips
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Jisoo Moon
- NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Kathleen M McCreary
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Hsun-Jen Chuang
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
- Nova Research, Inc., Alexandria, Virginia 22308, United States
| | | | - Berend T Jonker
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Connie H Li
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Rhonda M Stroud
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Olaf M J van 't Erve
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
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21
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Tiede DO, Saigal N, Ostovar H, Döring V, Lambers H, Wurstbauer U. Exciton Manifolds in Highly Ambipolar Doped WS 2. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3255. [PMID: 36145043 PMCID: PMC9504948 DOI: 10.3390/nano12183255] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Revised: 09/09/2022] [Accepted: 09/13/2022] [Indexed: 06/16/2023]
Abstract
The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable of shifting the Fermi level from the valence into the conduction band that is suitable to optically trace exciton binding as well as the single-particle band gap energies in the weakly doped regime. Combined spectroscopic imaging ellipsometry and photoluminescence spectroscopies spanning large n- and p-type doping with charge carrier densities up to 1014 cm-2 enable to study screening phenomena and doping dependent evolution of the rich exciton manifold whose origin is controversially discussed in literature. We show that the two most prominent emission bands in photoluminescence experiments are due to the recombination of spin-forbidden and momentum-forbidden charge neutral excitons activated by phonons. The observed interband transitions are redshifted and drastically weakened under electron or hole doping. This field-effect platform is not only suitable for studying exciton manifold but is also suitable for combined optical and transport measurements on degenerately doped atomically thin quantum materials at cryogenic temperatures.
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Affiliation(s)
- David Otto Tiede
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Nihit Saigal
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Hossein Ostovar
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Vera Döring
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Hendrik Lambers
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Ursula Wurstbauer
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
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22
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Liu H, Wang J, Liu Y, Wang Y, Xu L, Huang L, Liu D, Luo J. Visualizing Ultrafast Defect-Controlled Interlayer Electron-Phonon Coupling in Van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106955. [PMID: 35474352 DOI: 10.1002/adma.202106955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 03/19/2022] [Indexed: 06/14/2023]
Abstract
Engineering ultrafast interlayer coupling provides access to new quantum phenomena and novel device functionalities in atomically thin van der Waals heterostructures. However, due to all the atoms of a monolayer material being exposed at the interfaces, the interlayer coupling is extremely susceptible to defects, resulting in high energy dissipation through heat and low device performance. The study of how defects affect the interlayer coupling at ultrafast and atomic scales remains a challenge. Here, using femtosecond transient absorption microscopy, a new defect-induced ultrafast interlayer electron-phonon coupling pathway is identified in a WS2 /graphene heterostructure, involving a three-body collision between electrons in WS2 and both acoustic phonons and defects in graphene. This interaction manifests as the reduced defect-related Raman resonant activity and the accelerated electron-phonon scattering time from 7.1 to 2.4 ps. Furthermore, the ultrafast interlayer coupling process is directly imaged. These insights will advance the fundamental knowledge of heat dissipation in nanoscale devices, and enable new ways to dynamically manipulate electrons and phonons via defects in van der Waals heterostructures.
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Affiliation(s)
- Huan Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Yuanshuang Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Yong Wang
- Research Center for Quantum Optics and Quantum Communication, School of Science, Qingdao University of Technology, Qingdao, 266525, China
| | - Lujie Xu
- School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing, 100192, China
| | - Li Huang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Dameng Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Jianbin Luo
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
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23
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Das S, Gupta G, Chatterjee S, Watanabe K, Taniguchi T, Majumdar K. Highly Nonlinear Biexcitonic Photocurrent from Ultrafast Interlayer Charge Transfer. ACS NANO 2022; 16:9728-9735. [PMID: 35604012 DOI: 10.1021/acsnano.2c03397] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Strong Coulomb interactions in monolayer semiconductors allow them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonance, coupled with its charged nature, makes it intriguing for nonlinear photodetection─an area that is hitherto unexplored. Using the high built-in vertical electric field in an asymmetrically designed few-layer graphene encapsulated 1L-WS2 heterostructure, here we report a large, highly nonlinear photocurrent arising from the strong absorption by two charged biexciton species under zero external bias (self-powered mode). Time-resolved measurement reveals that the generated charged biexcitons transfer to the few-layer graphene in a time scale of sub-5 ps, indicating an ultrafast intrinsic limit of the photoresponse. By using single- and two-color photoluminescence excitation spectroscopy, we show that the two biexcitonic peaks originate from bright-dark and bright-bright exciton-trion combinations. Such innate nonlinearity in the photocurrent due to its biexcitonic origin, coupled with the ultrafast response due to swift interlayer charge transfer, exemplifies the promise of manipulating many-body effects in monolayers toward viable optoelectronic applications.
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Affiliation(s)
- Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Garima Gupta
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Suman Chatterjee
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-044 Japan
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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24
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Baidoo JK, Choi SH, Agyapong-Fordjour FOT, Boandoh S, Yun SJ, Adofo LA, Ben-Smith A, Kim YI, Jin JW, Jung MH, Jeong HY, Kim YM, Lee YH, Kim SM, Kim KK. Sequential Growth of Vertical Transition-Metal Dichalcogenide Heterostructures on Rollable Aluminum Foil. ACS NANO 2022; 16:8851-8859. [PMID: 35713417 DOI: 10.1021/acsnano.1c10233] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Vertical van der Waals heterostructures (vdWhs), which are made by layer-by-layer stacking of two-dimensional (2D) materials, offer great opportunities for the development of extraordinary physics and devices such as topological superconductivity, robust quantum Hall phenomenon, electron-hole pair condensation, Coulomb drag, and tunneling devices. However, the size of vdWhs is still limited to the order of a few micrometers, which restricts the large-scale roll-to-roll processes for industrial applications. Herein, we report the sequential growth of a 14 in. vertical vdWhs on a rollable Al foil via chemical vapor deposition. By supplying chalcogen precursors to liquid transition-metal precursor-coated Al foils, we grew a wide range of individual 2D transition-metal dichalcogenide (TMD) films, including MoS2, VS2, ReS2, WS2, SnS2, WSe2, and vanadium-doped MoS2. Additionally, by repeating the growth process, we successfully achieved the layer-by-layer growth of ReS2/MoS2 and SnS2/ReS2/MoS2 vdWhs. The chemically inert Al native oxide layer inhibits the diffusion of chalcogen and metal atoms into Al foils, allowing for the growth of diverse TMDs and their vdWhs. The conductive Al substrate enables the effective use of vdWhs/Al as a hydrogen evolution reaction electrocatalyst with a transfer-free process. This work provides a robust route for the commercialization of 2D TMDs and their vdWhs at a low cost.
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Affiliation(s)
- Joseph Kojo Baidoo
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | | | - Stephen Boandoh
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Andrew Ben-Smith
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Won Jin
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul 14072, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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25
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Shimasaki M, Nishihara T, Matsuda K, Endo T, Takaguchi Y, Liu Z, Miyata Y, Miyauchi Y. Directional Exciton-Energy Transport in a Lateral Heteromonolayer of WSe 2-MoSe 2. ACS NANO 2022; 16:8205-8212. [PMID: 35481755 DOI: 10.1021/acsnano.2c01890] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Controlling the direction of exciton-energy flow in two-dimensional (2D) semiconductors is crucial for developing future high-speed optoelectronic devices using excitons as the information carriers. However, intrinsic exciton diffusion in conventional 2D semiconductors is omnidirectional, and efficient exciton-energy transport in a specific direction is difficult to achieve. Here we demonstrate directional exciton-energy transport across the interface in tungsten diselenide (WSe2)-molybdenum diselenide (MoSe2) lateral heterostructures. Unidirectional transport is spontaneously driven by the built-in asymmetry of the exciton-energy landscape with respect to the heterojunction interface. At excitation positions close to the interface, the exciton photoluminescence (PL) intensity was substantially decreased in the WSe2 region and enhanced in the MoSe2 region. In PL excitation spectroscopy, it was confirmed that the observed phenomenon arises from lateral exciton-energy transport from WSe2 to MoSe2. This directional exciton-energy flow in lateral 2D heterostructures can be exploited in future optoelectronic devices.
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Affiliation(s)
- Masafumi Shimasaki
- Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Taishi Nishihara
- Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Minami-Osawa 1-1, Hachioji, Tokyo 192-0397, Japan
| | - Yuhei Takaguchi
- Department of Physics, Tokyo Metropolitan University, Minami-Osawa 1-1, Hachioji, Tokyo 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Minami-Osawa 1-1, Hachioji, Tokyo 192-0397, Japan
| | - Yuhei Miyauchi
- Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
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26
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Fabrication of devices featuring covalently linked MoS2–graphene heterostructures. Nat Chem 2022; 14:695-700. [DOI: 10.1038/s41557-022-00924-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Accepted: 03/07/2022] [Indexed: 11/08/2022]
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27
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Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy. Proc Natl Acad Sci U S A 2022; 119:e2119726119. [PMID: 35380900 PMCID: PMC9169783 DOI: 10.1073/pnas.2119726119] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022] Open
Abstract
Hot carrier–based energy harvesting is critically implied in the performances of optoelectronic devices based on van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD). The way electron–hole couples initially photogenerated in the TMD are converted into an electric current in Gr is a controversial issue. In this work we identify the interlayer interaction occurring during the first picoseconds following photoexcitation as an energy transfer process that is much faster than (other) photogating phenomena implied in optoelectronic applications. Intense light–matter interactions and unique structural and electrical properties make van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunneling transistors and flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics, and quantum light emitting devices (QLEDs), bright and narrow-line emitters using minimal amounts of active absorber material. The performance of such devices is critically ruled by interlayer interactions which are still poorly understood in many respects. Specifically, two classes of coupling mechanisms have been proposed, charge transfer (CT) and energy transfer (ET), but their relative efficiency and the underlying physics are open questions. Here, building on a time-resolved Raman scattering experiment, we determine the electronic temperature profile of Gr in response to TMD photoexcitation, tracking the picosecond dynamics of the G and 2D Raman bands. Compelling evidence for a dominant role of the ET process accomplished within a characteristic time of ∼4 ps is provided. Our results suggest the existence of an intermediate process between the observed picosecond ET and the generation of a net charge underlying the slower electric signals detected in optoelectronic applications.
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28
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Zhou Q, Li D, Zhang S, Wang S, Hu X. Quantum dots bind nanosheet to promote nanomaterial stability and resist endotoxin-induced fibrosis and PM 2.5-induced pneumonia. ECOTOXICOLOGY AND ENVIRONMENTAL SAFETY 2022; 234:113420. [PMID: 35298970 DOI: 10.1016/j.ecoenv.2022.113420] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Revised: 03/07/2022] [Accepted: 03/11/2022] [Indexed: 06/14/2023]
Abstract
Endotoxin lipopolysaccharide (LPS) is a harmful substance commonly found in various environments that causes lung fibrosis. Exposure to PM2.5 also increases the risk of respiratory diseases. Through sulfur-carbon bonds and the edge S effect, GOQDs were used to bind in single-layer molybdenum disulfide (SLMoS2) nanosheets to synthesize SLMoS2@GOQDs heterojunction structures. GOQDs doping greatly increased the water solubility and stabilized of SLMoS2. SLMoS2@GOQDs with catalase-like activity protected cells from ultrastructural and cytomembrane damage and apoptosis induced by LPS. Moreover, the doping of GOQDs enhanced the escape of SLMoS2@GOQDs from cellular uptake and suppressed the release of Mo ions. Nanosheet-cell interface interactions that were regulated by quantum dots supported these positive effects. Immunofluorescence analysis and cell imaging confirmed that the nanomaterial protected against cell injury by regulating the canonical Wnt/β-catenin pathway and the secretion of relevant cytokines, such as interleukin-6 (IL-6) and tumor necrosis factor-α (TNF-α). Moreover, SLMoS2@GOQDs also mitigated pneumonia caused by PM2.5 in vivo. Collectively, our findings not only provide a simple and effective approach to control lung diseases (caused by LPS or PM2.5), but also reveal the potential value of heterojunction materials in the fields of toxicology and human health, boosting the application of nanotechnology in the fields of ecotoxicology and environmental safety.
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Affiliation(s)
- Qixing Zhou
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China.
| | - Dandan Li
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China.
| | - Suyan Zhang
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China.
| | - Simin Wang
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China.
| | - Xiangang Hu
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China.
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29
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Yang R, Mei L, Zhang Q, Fan Y, Shin HS, Voiry D, Zeng Z. High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method. Nat Protoc 2022; 17:358-377. [PMID: 35022618 DOI: 10.1038/s41596-021-00643-w] [Citation(s) in RCA: 60] [Impact Index Per Article: 30.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 10/04/2021] [Indexed: 11/09/2022]
Abstract
Transition metal dichalcogenide (TMD) nanomaterials, especially the mono- or few-layer ones, have received extensive research interest owing to their versatile properties, ranging from true metals (e.g., NbS2 and VSe2) and semimetals (e.g., WTe2 and TiSe2) to semiconductors (e.g., MoS2 and We2) and insulators (e.g., HfS2). Therefore, the reliable production of these nanomaterials with atomically thin thickness and laterally uniform dimension is essential for their promising applications in transistors, photodetectors, electroluminescent devices, catalysis, energy conversion, environment remediation, biosensing, bioimaging, and so on. Recently, the electrochemical lithium ion intercalation-based exfoliation method has emerged as a mature, efficient and promising strategy for the high-yield production of mono- or few-layer TMD nanosheets; monolayer MoS2 (yield of 92%), monolayer TaS2 (yield of 93%) and bilayer TiS2 (yield of 93%) with lateral dimensions of ~1 µm (refs. 1-3). This Protocol describes the details of experimental procedures for the high-yield synthesis of mono- or few-layer TMDs and other inorganic nanosheets such as MoS2, WS2, TiS2, TaS2, ZrS2, graphene, h-BN, NbSe2, WSe2, Sb2Se3 and Bi2Te3 by using the electrochemical lithium ion intercalation-based exfoliation method, which involves the electrochemical intercalation of lithium ions into layered inorganic crystals and a mild sonication process. The whole protocol takes 26-38 h for the successful production of ultrathin inorganic nanosheets.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Liang Mei
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Qingyong Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Yingying Fan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea.
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR 5635, Université Montpellier, ENSCM, CNRS, Montpellier, France.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China.
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30
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Kim B, Luo Y, Rhodes D, Bai Y, Wang J, Liu S, Jordan A, Huang B, Li Z, Taniguchi T, Watanabe K, Owen J, Strauf S, Barmak K, Zhu X, Hone J. Free Trions with Near-Unity Quantum Yield in Monolayer MoSe 2. ACS NANO 2022; 16:140-147. [PMID: 34935357 DOI: 10.1021/acsnano.1c04331] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Trions, quasiparticles composed of an electron-hole pair bound to a second electron and/or hole, are many-body states with potential applications in optoelectronics. Trions in monolayer transition metal dichalcogenide (TMD) semiconductors have attracted recent interest due to their valley/spin polarization, strong binding energy, and tunability through external gate control. However, low materials quality (i.e., high defect density) has hindered efforts to understand the intrinsic properties of trions. The low photoluminescence (PL) quantum yield (QY) and short lifetime of trions have prevented harnessing them in device applications. Here, we study the behavior of trions in a series of MoSe2 monolayers, with atomic defect density varying by over 2 orders of magnitude. The QY increases with decreasing defect density and approaches unity in the cleanest material. Simultaneous measurement of the PL lifetime yields both the intrinsic radiative lifetime and the defect-dependent nonradiative lifetime. The long lifetime of ∼230 ps of trions allows direct observation of their diffusion.
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Affiliation(s)
- Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Yue Luo
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Nanoscale Systems, Harvard University, Cambridge, Massachusetts 02138, United States
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Daniel Rhodes
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Yusong Bai
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Jue Wang
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Abraham Jordan
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Baili Huang
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Zhaochen Li
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jonathan Owen
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
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31
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Lee Y, Chang S, Chen S, Chen S, Chen H. Optical Inspection of 2D Materials: From Mechanical Exfoliation to Wafer-Scale Growth and Beyond. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2102128. [PMID: 34716758 PMCID: PMC8728831 DOI: 10.1002/advs.202102128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Revised: 07/13/2021] [Indexed: 05/11/2023]
Abstract
Optical inspection is a rapid and non-destructive method for characterizing the properties of two-dimensional (2D) materials. With the aid of optical inspection, in situ and scalable monitoring of the properties of 2D materials can be implemented industrially to advance the development and progress of 2D material-based devices toward mass production. This review discusses the optical inspection techniques that are available to characterize various 2D materials, including graphene, transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), group-III monochalcogenides, black phosphorus (BP), and group-IV monochalcogenides. First, the authors provide an introduction to these 2D materials and the processes commonly used for their fabrication. Then they review several of the important structural properties of 2D materials, and discuss how to characterize them using appropriate optical inspection tools. The authors also describe the challenges and opportunities faced when applying optical inspection to recently developed 2D materials, from mechanically exfoliated to wafer-scale-grown 2D materials. Most importantly, the authors summarize the techniques available for largely and precisely enhancing the optical signals from 2D materials. This comprehensive review of the current status and perspective of future trends for optical inspection of the structural properties of 2D materials will facilitate the development of next-generation 2D material-based devices.
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Affiliation(s)
- Yang‐Chun Lee
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Sih‐Wei Chang
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Shu‐Hsien Chen
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Shau‐Liang Chen
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Hsuen‐Li Chen
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
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32
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Krause R, Aeschlimann S, Chávez-Cervantes M, Perea-Causin R, Brem S, Malic E, Forti S, Fabbri F, Coletti C, Gierz I. Microscopic Understanding of Ultrafast Charge Transfer in van der Waals Heterostructures. PHYSICAL REVIEW LETTERS 2021; 127:276401. [PMID: 35061410 DOI: 10.1103/physrevlett.127.276401] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 09/29/2021] [Accepted: 11/12/2021] [Indexed: 06/14/2023]
Abstract
Van der Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS_{2}/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS_{2} and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacancies. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices.
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Affiliation(s)
- R Krause
- University of Regensburg, Institute for Experimental and Applied Physics, 93040 Regensburg, Germany
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - S Aeschlimann
- University of Regensburg, Institute for Experimental and Applied Physics, 93040 Regensburg, Germany
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - M Chávez-Cervantes
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - R Perea-Causin
- Chalmers University of Technology, Department of Physics, 41296 Gothenburg, Sweden
| | - S Brem
- Philipps-Universität Marburg, Department of Physics, 35032 Marburg, Germany
| | - E Malic
- Chalmers University of Technology, Department of Physics, 41296 Gothenburg, Sweden
- Philipps-Universität Marburg, Department of Physics, 35032 Marburg, Germany
| | - S Forti
- Center for Nanotechnology Innovation at NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
| | - F Fabbri
- Center for Nanotechnology Innovation at NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- NEST, Istituto Nanoscienze, CNR and Scuola Normale Superiore, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - C Coletti
- Center for Nanotechnology Innovation at NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - I Gierz
- University of Regensburg, Institute for Experimental and Applied Physics, 93040 Regensburg, Germany
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33
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Huang S, Li J, Fang J, Ding H, Huang W, Zhao X, Zheng Y. Self-Limiting Opto-Electrochemical Thinning of Transition-Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58966-58973. [PMID: 34851616 DOI: 10.1021/acsami.1c19163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional monolayer and few-layer transition-metal dichalcogenides (TMDs) are promising for advanced electronic and photonic applications due to their extraordinary optoelectronic and mechanical properties. However, it has remained challenging to produce high-quality TMD thin films with controlled thickness and desired micropatterns, which are essential for their practical implementation in functional devices. In this work, a self-limiting opto-electrochemical thinning (sOET) technique is developed for on-demand thinning and patterning of TMD flakes at high efficiency. Benefiting from optically enhanced electrochemical reactions, sOET features a low operational optical power density of down to 70 μW μm-2 to avoid photodamage and thermal damage to the thinned TMD flakes. Through selective optical excitation with different laser wavelengths based on the thickness-dependent band gaps of TMD materials, sOET enables precise control over the final thickness of TMD flakes. With the capability of thickness control and site-specific patterning, our sOET offers an effective route to fabricating high-quality TMD materials for a broad range of applications in nanoelectronics, nanomechanics, and nanophotonics.
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Affiliation(s)
- Suichu Huang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education and School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 15001, China
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Jingang Li
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Jie Fang
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Hongru Ding
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Wentao Huang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education and School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 15001, China
| | - Xuezeng Zhao
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education and School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 15001, China
| | - Yuebing Zheng
- Walker Department of Mechanical Engineering, Material Science and Engineering Program and Texas Material Institute, The University of Texas at Austin, Austin, Texas 78712, United States
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Strain and Spin-Orbit Coupling Engineering in Twisted WS 2/Graphene Heterobilayer. NANOMATERIALS 2021; 11:nano11112921. [PMID: 34835687 PMCID: PMC8625993 DOI: 10.3390/nano11112921] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2021] [Accepted: 10/28/2021] [Indexed: 11/16/2022]
Abstract
The strain in hybrid van der Waals heterostructures, made of two distinct two-dimensional van der Waals materials, offers an interesting handle on their corresponding electronic band structure. Such strain can be engineered by changing the relative crystallographic orientation between the constitutive monolayers, notably, the angular misorientation, also known as the “twist angle”. By combining angle-resolved photoemission spectroscopy with density functional theory calculations, we investigate here the band structure of the WS2/graphene heterobilayer for various twist angles. Despite the relatively weak coupling between WS2 and graphene, we demonstrate that the resulting strain quantitatively affects many electronic features of the WS2 monolayers, including the spin-orbit coupling strength. In particular, we show that the WS2 spin-orbit splitting of the valence band maximum at K can be tuned from 430 to 460 meV. Our findings open perspectives in controlling the band dispersion of van der Waals materials.
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35
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Blanco E, Rocha L, Pozo MD, Vázquez L, Petit-Domínguez MD, Casero E, Quintana C. A supramolecular hybrid sensor based on cucurbit[8]uril, 2D-molibdenum disulphide and diamond nanoparticles towards methyl viologen analysis. Anal Chim Acta 2021; 1182:338940. [PMID: 34602204 DOI: 10.1016/j.aca.2021.338940] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 07/20/2021] [Accepted: 08/10/2021] [Indexed: 11/15/2022]
Abstract
We develop an electrochemical sensor by using 2D-transition metal dichalcogenides (TMD), specifically MoS2, and nanoparticles stabilized with cucurbit[8]uril (CB[8]) incorporated together with them. Two different nanoparticles are assayed: diamond nanoparticles (DNPs) and gold nanoparticles (AuNp). 0D materials, together with TMD, provide increased conductivity and active surface while the macrocycle CB[8] affords selectivity towards the guest methyl viologen (MV2+), also named paraquat. Glassy Carbon (GC) electrodes are modified by drop-casting of suspensions of MoS2, followed by either a CB[8]-DNPs hybrid dispersion or a CB[8]-AuNp suspension. Atomic force microscopy is employed for the morphological characterization of the electrochemical sensor surface while cyclic voltammetry and electrochemical impedance spectroscopy techniques allow the electrochemical characterization of the sensor. The well-stablished signals of CB[8]-encapsulated MV2+ arise in voltammetric measurements when the macrocycle modifies the 0D-materials. Once the sensor construction and differential pulse voltammetry parameters have been optimized for quantification purposes, calibration procedures are performed with the platform GC/MoS2/CB[8]-DNPs. This sensing platform shows linear relations between peak intensity and the MV2+ concentration in the linear concentration range of (0.73-8.0) · 10-6 M with a limit of detection of 2.2 · 10-7 M. Analyses of river water samples fortified with MV2+ at the μM level shows recoveries of 100% with RSD values of 6.4% (n = 3).
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Affiliation(s)
- Elías Blanco
- Departamento de Química Analítica y Análisis Instrumental, Facultad de Ciencias, C/ Francisco Tomás y Valiente, Nº7, Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Laura Rocha
- Departamento de Química Analítica y Análisis Instrumental, Facultad de Ciencias, C/ Francisco Tomás y Valiente, Nº7, Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - María Del Pozo
- Departamento de Química Analítica y Análisis Instrumental, Facultad de Ciencias, C/ Francisco Tomás y Valiente, Nº7, Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Luis Vázquez
- ESISNA Group, Instituto de Ciencia de Materiales de Madrid (CSIC), C/ Sor Juana Inés de La Cruz, Nº3. Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - María Dolores Petit-Domínguez
- Departamento de Química Analítica y Análisis Instrumental, Facultad de Ciencias, C/ Francisco Tomás y Valiente, Nº7, Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Elena Casero
- Departamento de Química Analítica y Análisis Instrumental, Facultad de Ciencias, C/ Francisco Tomás y Valiente, Nº7, Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Carmen Quintana
- Departamento de Química Analítica y Análisis Instrumental, Facultad de Ciencias, C/ Francisco Tomás y Valiente, Nº7, Campus de Excelencia de La Universidad Autónoma de Madrid, 28049, Madrid, Spain.
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36
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Luo D, Tang J, Shen X, Ji F, Yang J, Weathersby S, Kozina ME, Chen Z, Xiao J, Ye Y, Cao T, Zhang G, Wang X, Lindenberg AM. Twist-Angle-Dependent Ultrafast Charge Transfer in MoS 2-Graphene van der Waals Heterostructures. NANO LETTERS 2021; 21:8051-8057. [PMID: 34529439 DOI: 10.1021/acs.nanolett.1c02356] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Vertically stacked transition metal dichalcogenide-graphene heterostructures provide a platform for novel optoelectronic applications with high photoresponse speeds. Photoinduced nonequilibrium carrier and lattice dynamics in such heterostructures underlie these applications but have not been understood. In particular, the dependence of these photoresponses on the twist angle, a key tuning parameter, remains elusive. Here, using ultrafast electron diffraction, we report the simultaneous visualization of charge transfer and electron-phonon coupling in MoS2-graphene heterostructures with different stacking configurations. We find that the charge transfer timescale from MoS2 to graphene varies strongly with twist angle, becoming faster for smaller twist angles, and show that the relaxation timescale is significantly shorter in a heterostructure as compared to a monolayer. These findings illustrate that twist angle constitutes an additional tuning knob for interlayer charge transfer in heterobilayers and deepen our understanding of fundamental photophysical processes in heterostructures, of importance for future applications in optoelectronics and light harvesting.
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Affiliation(s)
- Duan Luo
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Fuhao Ji
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jie Yang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen Weathersby
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Michael E Kozina
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Zhijiang Chen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Yusen Ye
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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37
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Ding Y, Zeng M, Zheng Q, Zhang J, Xu D, Chen W, Wang C, Chen S, Xie Y, Ding Y, Zheng S, Zhao J, Gao P, Fu L. Bidirectional and reversible tuning of the interlayer spacing of two-dimensional materials. Nat Commun 2021; 12:5886. [PMID: 34620848 PMCID: PMC8497624 DOI: 10.1038/s41467-021-26139-5] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 09/10/2021] [Indexed: 11/08/2022] Open
Abstract
Interlayer spacing is expected to influence the properties of multilayer two-dimensional (2D) materials. However, the ability to non-destructively regulate the interlayer spacing bidirectionally and reversibly is challenging. Here we report the preparation of 2D materials with tunable interlayer spacing by introducing active sites (Ce ions) in 2D materials to capture and immobilize Pt single atoms. The strong chemical interaction between active sites and Pt atoms contributes to the intercalation behavior of Pt atoms in the interlayer of 2D materials and further promotes the formation of chemical bonding between Pt atom and host materials. Taking cerium-embedded molybdenum disulfide (MoS2) as an example, intercalation of Pt atoms enables interlayer distance tuning via an electrochemical protocol, leading to interlayer spacing reversible and linear compression and expansion from 6.546 ± 0.039 Å to 5.792 ± 0.038 Å (~11 %). The electronic property evolution with the interlayer spacing variation is demonstrated by the photoluminescence (PL) spectra, delivering that the well-defined barrier between the multilayer and monolayer layered materials can be artificially designed.
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Affiliation(s)
- Yiran Ding
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Qijing Zheng
- Department of Physics, University of Science & Technology of China, Hefei, 230026, China
| | - Jiaqian Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Ding Xu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Weiyin Chen
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Chenyang Wang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Shulin Chen
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Yingying Xie
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Yu Ding
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Shuting Zheng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Jin Zhao
- Department of Physics, University of Science & Technology of China, Hefei, 230026, China
| | - Peng Gao
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Lei Fu
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China.
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China.
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38
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Wang Z, Cao Q, Sotthewes K, Hu Y, Shin HS, Eigler S. Interlayer electron modulation in van der Waals heterostructures assembled by stacking monolayer MoS 2 onto monolayer graphene with different electron transfer ability. NANOSCALE 2021; 13:15464-15470. [PMID: 34505854 DOI: 10.1039/d1nr03708k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Achieving tunable optoelectronic properties and clarifying interlayer interactions are key challenges in the development of 2D heterostructures. Herein, we report the feasible modulation of the optoelectronic properties of monolayer MoS2 (1L-MoS2) on three different graphene monolayers with varying ability in extracting electrons. Monolayer oxygen-functionalized graphene (1L-oxo-G, a high amount of oxygen of 60%) with a work function (WF) of 5.67 eV and its lowly oxidized reduction product, namely reduced-oxo-G (1L-r-oxo-G, a low amount of oxygen of 0.1%), with a WF of 5.85 eV serving as hole injection layers significantly enhance the photoluminescence (PL) intensity of MoS2, whereas pristine monolayer graphene (1L-G) with a work function (WF) of 5.02 eV results in PL quenching of MoS2. The enhancement in the PL intensity is due to increase of neutral exciton recombination. Furthermore, 1L-r-oxo-G/MoS2 exhibited a higher increase (5-fold) in PL than 1L-oxo-G/MoS2 (3-fold). Our research can help modulate the carrier concentration and electronic type of 1L-MoS2 and has promising applications in optoelectronic devices.
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Affiliation(s)
- Zhenping Wang
- Department of Chemistry, Low-Dimensional Carbon and 2D Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
| | - Qing Cao
- Institute of Chemistry and Biochemistry, Freie Universität Berlin, Takustraße 3, 14195 Berlin, Germany.
| | - Kai Sotthewes
- Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
| | - Yalei Hu
- Institute of Chemistry and Biochemistry, Freie Universität Berlin, Takustraße 3, 14195 Berlin, Germany.
| | - Hyeon S Shin
- Department of Chemistry, Low-Dimensional Carbon and 2D Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
| | - Siegfried Eigler
- Institute of Chemistry and Biochemistry, Freie Universität Berlin, Takustraße 3, 14195 Berlin, Germany.
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39
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Lestrell E, O'Brien CM, Elnathan R, Voelcker NH. Vertically Aligned Nanostructured Topographies for Human Neural Stem Cell Differentiation and Neuronal Cell Interrogation. ADVANCED THERAPEUTICS 2021. [DOI: 10.1002/adtp.202100061] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Affiliation(s)
- Esther Lestrell
- Faculty of Pharmacy and Pharmaceutical Sciences Monash University Parkville VIC 3052 Australia
- Melbourne Centre for Nanofabrication Victorian Node of the Australian National Fabrication Facility 151 Wellington Road Clayton Victoria 3168 Australia
- CSIRO Manufacturing Clayton Victoria 3168 Australia
| | - Carmel M. O'Brien
- CSIRO Manufacturing Clayton Victoria 3168 Australia
- Australian Regenerative Medicine Institute Monash University Clayton Victoria 3168 Australia
| | - Roey Elnathan
- Faculty of Pharmacy and Pharmaceutical Sciences Monash University Parkville VIC 3052 Australia
- Melbourne Centre for Nanofabrication Victorian Node of the Australian National Fabrication Facility 151 Wellington Road Clayton Victoria 3168 Australia
| | - Nicolas H. Voelcker
- Faculty of Pharmacy and Pharmaceutical Sciences Monash University Parkville VIC 3052 Australia
- Melbourne Centre for Nanofabrication Victorian Node of the Australian National Fabrication Facility 151 Wellington Road Clayton Victoria 3168 Australia
- CSIRO Manufacturing Clayton Victoria 3168 Australia
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40
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Stewart JC, Fan Y, Danial JSH, Goetz A, Prasad AS, Burton OJ, Alexander-Webber JA, Lee SF, Skoff SM, Babenko V, Hofmann S. Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride. ACS NANO 2021; 15:13591-13603. [PMID: 34347438 DOI: 10.1021/acsnano.1c04467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Hexagonal boron nitride (hBN) is a promising host material for room-temperature, tunable solid-state quantum emitters. A key technological challenge is deterministic and scalable spatial emitter localization, both laterally and vertically, while maintaining the full advantages of the 2D nature of the material. Here, we demonstrate emitter localization in hBN in all three dimensions via a monolayer (ML) engineering approach. We establish pretreatment processes for hBN MLs to either fully suppress or activate emission, thereby enabling such differently treated MLs to be used as select building blocks to achieve vertical (z) emitter localization at the atomic layer level. We show that emitter bleaching of ML hBN can be suppressed by sandwiching between two protecting hBN MLs, and that such thin stacks retain opportunities for external control of emission. We exploit this to achieve lateral (x-y) emitter localization via the addition of a patterned graphene mask that quenches fluorescence. Such complete emitter site localization is highly versatile, compatible with planar, scalable processing, allowing tailored approaches to addressable emitter array designs for advanced characterization, monolithic device integration, and photonic circuits.
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Affiliation(s)
- James Callum Stewart
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Ye Fan
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - John S H Danial
- The Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom
| | - Alexander Goetz
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria
| | - Adarsh S Prasad
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria
| | - Oliver J Burton
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Jack A Alexander-Webber
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Steven F Lee
- The Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom
| | - Sarah M Skoff
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria
| | - Vitaliy Babenko
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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41
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Zhou H, Chen Y, Zhu H. Deciphering asymmetric charge transfer at transition metal dichalcogenide-graphene interface by helicity-resolved ultrafast spectroscopy. SCIENCE ADVANCES 2021; 7:7/34/eabg2999. [PMID: 34417175 PMCID: PMC8378813 DOI: 10.1126/sciadv.abg2999] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Accepted: 07/01/2021] [Indexed: 05/27/2023]
Abstract
Transition metal dichalcogenide (TMD)/graphene (Gr) heterostructures constitute a key component for two-dimensional devices. The operation of TMD/Gr devices relies on interfacial charge/energy transfer processes, which remains unclear and challenging to unravel. Fortunately, the coupled spin and valley index in TMDs adds a new degree of freedom to the charges and, thus, another dimension to spectroscopy. Here, by helicity-resolved ultrafast spectroscopy, we find that photoexcitation in TMDs transfers to graphene by asynchronous charge transfer, with one type of charge transferring in the order of femtoseconds and the other in picoseconds. The rate correlates well with energy offset between TMD and graphene, regardless of compositions and charge species. Spin-polarized hole injection or long-lived polarized hole can be achieved with deliberately designed heterostructures. This study shows helicity-resolved ultrafast spectroscopy as a powerful and facile approach to reveal the fundamental and complex charge/spin dynamics in TMD-based heterostructures, paving the way toward valleytronic and optoelectronic applications.
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Affiliation(s)
- Hongzhi Zhou
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Yuzhong Chen
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Haiming Zhu
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China.
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42
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Mitterreiter E, Schuler B, Micevic A, Hernangómez-Pérez D, Barthelmi K, Cochrane KA, Kiemle J, Sigger F, Klein J, Wong E, Barnard ES, Watanabe K, Taniguchi T, Lorke M, Jahnke F, Finley JJ, Schwartzberg AM, Qiu DY, Refaely-Abramson S, Holleitner AW, Weber-Bargioni A, Kastl C. The role of chalcogen vacancies for atomic defect emission in MoS 2. Nat Commun 2021; 12:3822. [PMID: 34158488 PMCID: PMC8219741 DOI: 10.1038/s41467-021-24102-y] [Citation(s) in RCA: 55] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 05/28/2021] [Indexed: 11/08/2022] Open
Abstract
For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.
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Grants
- EXC 2089/1-390776260 Deutsche Forschungsgemeinschaft (German Research Foundation)
- RTG 2247 Deutsche Forschungsgemeinschaft (German Research Foundation)
- RTG 2247 Deutsche Forschungsgemeinschaft (German Research Foundation)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- DE-AC02-05CH11231 DOE | Office of Science (SC)
- JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST)
- JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST)
- JPMXP0112101001 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- JP20H00354 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- JPMXP0112101001 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- Nanosystems Initiative Munich (NIM) Bavaria California Technology Center (BaCaTeC)
- Alexander von Humboldt-Stiftung (Alexander von Humboldt Foundation)
- INCITE, Contract No. DE-AC05-00OR22725
- Bavaria California Technology Center (BaCaTeC) TUM International Graduate School of Science and Engineering (IGSSE)
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Affiliation(s)
- Elmar Mitterreiter
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Bruno Schuler
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- nanotech@surfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
| | - Ana Micevic
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Daniel Hernangómez-Pérez
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel
| | - Katja Barthelmi
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | | | - Jonas Kiemle
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Florian Sigger
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Julian Klein
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Edward Wong
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Michael Lorke
- Bremen Center for Computational Materials Science, University of Bremen, Bremen, Germany
- Bremen Institute for Theoretical Physics, University of Bremen, Bremen, Germany
| | - Frank Jahnke
- Bremen Institute for Theoretical Physics, University of Bremen, Bremen, Germany
| | - Johnathan J Finley
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | | | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, USA
| | - Sivan Refaely-Abramson
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel
| | - Alexander W Holleitner
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.
- Munich Center for Quantum Science and Technology (MCQST), München, Germany.
| | | | - Christoph Kastl
- Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.
- Munich Center for Quantum Science and Technology (MCQST), München, Germany.
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43
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Chen P, Li Z, Li D, Pi L, Liu X, Luo J, Zhou X, Zhai T. 2D Rare Earth Material (EuOCl) with Ultra-Narrow Photoluminescence at Room Temperature. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100137. [PMID: 33811431 DOI: 10.1002/smll.202100137] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2021] [Revised: 02/24/2021] [Indexed: 06/12/2023]
Abstract
High color purity and color rendition of 2D luminescent materials have long been pursued for applications in low-dimensional lighting, display, biolabeling, and laser. However, the reported photoluminescence (PL) linewidth of most 2D luminescent materials is about dozens of meV. Herein, a brand-new luminescent system of 2D rare earth (RE) material EuOCl (1.1 nm) with ultra-narrow linewidth (1.2 meV) at room temperature is successfully synthesized via chemical vapor deposition (CVD). The linewidth of EuOCl flakes at room temperature is even narrower than most 2D luminescent materials and heterostructures detected at below 10 K. Impressively, the as-synthesized EuOCl flakes show abnormal temperature-dependent photoluminescent properties, which is absolutely different from the relatively stable 4f-4f transitions in RE owing to shielding from outer shell electrons. J-mixing effect has been successfully applied for this phenomenon. Undoubtedly, luminescent 2D EuOCl flakes will open new territory for the applications of 2D RE materials in the 2D luminescent areas, especially for the applications at room temperature.
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Affiliation(s)
- Ping Chen
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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44
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Bradac C, Xu ZQ, Aharonovich I. Quantum Energy and Charge Transfer at Two-Dimensional Interfaces. NANO LETTERS 2021; 21:1193-1204. [PMID: 33492957 DOI: 10.1021/acs.nanolett.0c04152] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Energy and charge transfer processes in interacting donor-acceptor systems are the bedrock of many fundamental studies and technological applications ranging from biosensing to energy storage and quantum optoelectronics. Central to the understanding and utilization of these transfer processes is having full control over the donor-acceptor distance. With their atomic thickness and ease of integrability, two-dimensional materials are naturally emerging as an ideal platform for the task. Here, we review how van der Waals semiconductors are shaping the field. We present a selection of some of the most significant demonstrations involving transfer processes in layered materials that deepen our understanding of transfer dynamics and are leading to intriguing practical realizations. Alongside current achievements, we discuss outstanding challenges and future opportunities.
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Affiliation(s)
- Carlo Bradac
- Department of Physics and Astronomy, Trent University, 1600 West Bank Drive, Peterborough, Ontario K9J 0G2, Canada
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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45
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Hotta T, Ueda A, Higuchi S, Okada M, Shimizu T, Kubo T, Ueno K, Taniguchi T, Watanabe K, Kitaura R. Enhanced Exciton-Exciton Collisions in an Ultraflat Monolayer MoSe 2 Prepared through Deterministic Flattening. ACS NANO 2021; 15:1370-1377. [PMID: 33356145 DOI: 10.1021/acsnano.0c08642] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Squeezing bubbles and impurities out of interlayer spaces by applying force through a few-layer graphene capping layer leads to van der Waals heterostructures with the ultraflat structure free from random electrostatic potential arising from charged impurities. Without the graphene capping layer, a squeezing process with an AFM tip induces applied-force-dependent charges of Δn ∼ 2 × 1012 cm-2 μN-1, resulting in the significant intensity of trions in photoluminescence spectra of MoSe2 at low temperature. We found that a hBN/MoSe2/hBN prepared with the "graphene-capping-assisted AFM nano-squeezing method" shows a strong excitonic emission with negligible trion peak, and the residual line width of the exciton peak is only 2.2 meV, which is comparable to the homogeneous limit. Furthermore, in this high-quality sample, we found that the formation of biexciton occurs even at extremely low excitation power (Φph ∼ 2.3 × 1019 cm-2 s-1) due to the enhanced collisions between excitons.
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Affiliation(s)
- Takato Hotta
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
| | - Akihiko Ueda
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
| | - Shohei Higuchi
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
| | - Mitsuhiro Okada
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
| | - Tetsuo Shimizu
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
| | - Toshitaka Kubo
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
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