1
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Wang H, Zhu X, Zhao Z, Wang X, Qian Z, Jiao L, Wang K, Li Y, Qi JJ, Asif M, Zheng Q, Xie L. In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope. NANO LETTERS 2024; 24:5498-5505. [PMID: 38619556 DOI: 10.1021/acs.nanolett.4c00620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.
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Affiliation(s)
- Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiaokai Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaoyang Zhao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinsheng Wang
- Institute of Biomedical Engineering, College of Life Sciences, Qingdao University, Qingdao 266071, China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun-Jie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Muhammad Asif
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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2
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Lyu Z, Qian Y, Zhang Q, Fang Z, Kang DJ. Liquid-phase catalyst pre-seeding for controlled growth of layered MoS 2 films over a large area via chemical vapor deposition. NANOSCALE 2024; 16:1906-1914. [PMID: 38170840 DOI: 10.1039/d3nr02928j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
We introduce an innovative method that facilitates precise control of high-quality molybdenum disulfide (MoS2) growth, extending up to three layers, on a large scale. This scalable growth is realized by employing solution-based catalysts and precursors in conjunction with chemical vapor deposition (CVD). The catalyst not only diminishes the precursor's activation energy and melting temperature but also augments the overall reaction rate. By regulating the concentration ratio, we directly manipulate the precursor concentrations, thereby promoting clean growth. This unique control mechanism, as delineated in this study, is unprecedented. Our findings confirm that the catalyst introduction does not compromise the quality of the resulting samples. Field effect transistors (FETs) fabricated from the synthesized MoS2 display superior electrical properties; they exhibit a high carrier mobility of 32.1 cm2 V-1 s-1 and an on/off current ratio of 108, signifying their promising electrical performance. Accordingly, our findings suggest that the solution-based CVD strategy presented herein can be potentially utilized for the integration of FETs into a multitude of practical applications.
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Affiliation(s)
- Zhiyi Lyu
- Department of Physics, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
| | - Yongteng Qian
- College of Pharmacy, Jinhua Polytechnic, Jinhua, Zhejiang Province, 321007, P. R. China
| | - Qianwen Zhang
- Department of Physics, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
| | - Zhenxing Fang
- College of Science and Technology, Ningbo University, Ningbo 315212, P. R. China
| | - Dae Joon Kang
- Department of Physics, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
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3
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Chin HT, Wang DC, Wang H, Muthu J, Khurshid F, Chen DR, Hofmann M, Chuang FC, Hsieh YP. Confined VLS Growth of Single-Layer 2D Tungsten Nitrides. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1705-1711. [PMID: 38145463 DOI: 10.1021/acsami.3c13286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/26/2023]
Abstract
Two-dimensional (2D) metal nitrides have garnered significant interest due to their potential applications in future electronics and quantum systems. However, the synthesis of such materials with sufficient uniformity and at relevant scales remains an unaddressed challenge. This study demonstrates the potential of confined growth to control and enhance the morphology of 2D metal nitrides. By restricting the reaction volume of vapor-liquid-solid reactions, an enhanced precursor concentration was achieved that reduces the nucleation density, resulting in larger grain sizes and suppression of multilayer growth. Detailed characterization reveals the importance of balancing the energetic and kinetic aspects of tungsten nitride formation toward this ability. The introduction of a promoter enabled the realization of large-scale, single-layer tungsten nitride with a uniform and high interfacial quality. Finally, our advance in morphology control was applied to the production of edge-enriched 2D tungsten nitrides with significantly enhanced hydrogen evolution ability, as indicated by an unprecedented Tafel slope of 55 mV/dec.
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Affiliation(s)
- Hao-Ting Chin
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Deng-Chi Wang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Hao Wang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Jeyavelan Muthu
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
| | - Farheen Khurshid
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Ding-Rui Chen
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
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4
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Kalt RA, Arcifa A, Wäckerlin C, Stemmer A. CVD of MoS 2 single layer flakes using Na 2MoO 4 - impact of oxygen and temperature-time-profile. NANOSCALE 2023; 15:18871-18882. [PMID: 37969003 PMCID: PMC10690930 DOI: 10.1039/d3nr03907b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 10/31/2023] [Indexed: 11/17/2023]
Abstract
Two-dimensional (2D) materials are of great interest in many fields due to their astonishing properties at an atomic level thickness. Many fundamentally different methods to synthesize 2D materials, such as exfoliation or chemical vapor deposition (CVD), have been reported. Despite great efforts and progress to investigate and improve each synthesis method, mainly to increase the yield and quality of the synthesized 2D materials, most approaches still involve some compromise. Herein, we systematically investigate a chemical vapor deposition (CVD) process to synthesize molybdenum disulfide (MoS2) single layer flakes using sodium molybdate (Na2MoO4), deposited on a silica (SiO2/Si) substrate by spin-coating its aqueous solution, as the molybdenum source and sulfur powder as sulfur source, respectively. The focus lies on the impact of oxygen (O2) in the gas flow and temperature-time-profile on reaction process and product quality. Atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used to investigate MoS2 flakes synthesized under different exposure times of O2 and with various temperature-time-profiles. This detailed study shows that the MoS2 flakes are formed within the first few minutes of synthesis and elaborates on the necessity of O2 in the gas flow, as well as drawbacks of its presence. In addition, the applied temperature-time-profile highly affects the ability to detach MoS2 flakes from the growth substrate when immersed in water, but it has no impact on the flake.
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Affiliation(s)
- Romana Alice Kalt
- Nanotechnology Group, ETH Zürich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
| | - Andrea Arcifa
- Surface Science & Coating Technologies, Swiss Federal Laboratories for Materials Science and Technology (EMPA), Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Christian Wäckerlin
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Station 3, CH-1015 Lausanne, Switzerland
- Laboratory for X-ray Nanoscience and Technologies, Paul-Scherrer-Institute (PSI), CH-5232 Villigen PSI, Switzerland
| | - Andreas Stemmer
- Nanotechnology Group, ETH Zürich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
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5
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Rahman M, Bashar MS, Rahman ML, Chowdhury FI. Comprehensive review of micro/nanostructured ZnSnO 3: characteristics, synthesis, and diverse applications. RSC Adv 2023; 13:30798-30837. [PMID: 37876649 PMCID: PMC10591246 DOI: 10.1039/d3ra05481k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2023] [Accepted: 09/14/2023] [Indexed: 10/26/2023] Open
Abstract
Generally, zinc stannate (ZnSnO3) is a fascinating ternary oxide compound, which has attracted significant attention in the field of materials science due to its unique properties such high sensitivity, large specific area, non-toxic nature, and good compatibility. Furthermore, in terms of both its structure and properties, it is the most appealing category of nanoparticles. The chemical stability of ZnSnO3 under normal conditions contributes to its applicability in various fields. To date, its potential as a luminescent and photovoltaic material and application in supercapacitors, batteries, solar cells, biosensors, gas sensors, and catalysts have been extensively studied. Additionally, the efficient energy storage capacity of ZnSnO3 makes it a promising candidate for the development of energy storage systems. This review focuses on the notable progress in the structural features of ZnSnO3 nanocomposites, including the synthetic processes employed for the fabrication of various ZnSnO3 nanocomposites, their intrinsic characteristics, and their present-day uses. Specifically, we highlight the recent progress in ZnSnO3-based nanomaterials, composites, and doped materials for their utilization in Li-ion batteries, photocatalysis, gas sensors, and energy storage and conversion devices. The further exploration and understanding of the properties of ZnSnO3 will undoubtedly lead to its broader implementation and contribute to the advancement of next-generation materials and devices.
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Affiliation(s)
- Moksodur Rahman
- Department of Chemistry, University of Chittagong Chattogram Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR) Dhaka Bangladesh
| | | | - Md Lutfor Rahman
- Bangladesh Council of Scientific and Industrial Research (BCSIR) Dhaka Bangladesh
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6
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Walke P, Kaupmees R, Grossberg-Kuusk M, Krustok J. Unusual Defect-Related Room-Temperature Emission from WS 2 Monolayers Synthesized through a Potassium-Based Precursor. ACS OMEGA 2023; 8:37958-37970. [PMID: 37867715 PMCID: PMC10586178 DOI: 10.1021/acsomega.3c03476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 08/29/2023] [Indexed: 10/24/2023]
Abstract
Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.
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Affiliation(s)
- Peter Walke
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Reelika Kaupmees
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Maarja Grossberg-Kuusk
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Jüri Krustok
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
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7
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Zhu D, Qiao M, Yan J, Xie J, Guo H, Deng S, He G, Zhao Y, Luo M. Three-dimensional patterning of MoS 2 with ultrafast laser. NANOSCALE 2023; 15:14837-14846. [PMID: 37646207 DOI: 10.1039/d3nr01669b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Transition metal chalcogenides, a special two-dimensional (2D) material emerged in recent years, possess unique optoelectronic properties and have been used to fabricate various optoelectronic devices. While it is essential to manufacture multifunctional devices with complex nanostructures for practical applications, 2D material devices present a tendency toward miniaturization. However, the controllable fabrication of complex nanostructures on 2D materials remains a challenge. Herein, we propose a method to create designed three-dimensional (3D) patterns on the MoS2 surface by modulating the interaction between an ultrafast laser and MoS2. Three different nanostructures, including flat, bulge, and craters, can be fabricated through laser-induced surface morphology transformation, which is related to thermal diffusion, oxidation, and ablation processes. The MoS2 field effect transistor is fabricated by ultrafast laser excitation which exhibits enhanced electrical properties. This study provides a promising strategy for 3D pattern fabrication, which is helpful for the development of multifunctional microdevices.
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Affiliation(s)
- Dezhi Zhu
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Ming Qiao
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Jianfeng Yan
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Jiawang Xie
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Heng Guo
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Shengfa Deng
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Guangzhi He
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Yuzhi Zhao
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Ma Luo
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
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8
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Wang Y, He J, Zang Y, Zhao C, Di M, Wang B. Controlled synthesis of Mo 2C micron flowers via vapor-liquid-solid method as enhanced electrocatalyst for hydrogen evolution reaction. RSC Adv 2023; 13:26144-26147. [PMID: 37671004 PMCID: PMC10475879 DOI: 10.1039/d3ra04813f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 08/18/2023] [Indexed: 09/07/2023] Open
Abstract
Mo2C demonstrates excellent performance in catalysis, and it has been found to possess excellent hydrogen evolution reaction (HER) catalytic activity and highly efficient nitrogen fixation. The catalytic activity of Mo2C is greatly influenced and restricted by the preparation method. Sintering and carbon deposition, which affect the catalytic activity of Mo2C, are inevitable in the traditional vapor-solid-solid (VSS) process. In this study, we report the controllable synthesis of α-Mo2C micron flowers by adjusting the growth temperature via a vapor-liquid-solid (VLS) process. The density of the Mo2C micron flowers is closely related to the concentration of Na2MoO4 aqueous solution. The as-grown Mo2C micron flowers dispersed with Pt are validated to be an enhanced collaborative electrocatalyst for HER against Pt/VSS-Mo2C.
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Affiliation(s)
- Yuwei Wang
- College of Physical Science and Technology, Bohai University Jinzhou 121013 China
| | - Jian He
- College of Chemistry and Materials Engineering, Bohai University Jinzhou 121013 China
| | - Yipeng Zang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences Dalian 116023 China
| | - Changbao Zhao
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences Dalian 116023 China
| | - Miaomiao Di
- College of Chemistry and Materials Engineering, Bohai University Jinzhou 121013 China
| | - Bin Wang
- College of Chemistry and Materials Engineering, Bohai University Jinzhou 121013 China
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences Dalian 116023 China
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9
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Kim M, Son M, Seo DB, Kim J, Jang M, Kim DI, Lee S, Yim S, Song W, Myung S, Yoo JW, Lee SS, An KS. Dual Catalytic and Self-Assembled Growth of Two-Dimensional Transition Metal Dichalcogenides Through Simultaneous Predeposition Process. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206350. [PMID: 36866498 DOI: 10.1002/smll.202206350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Revised: 02/10/2023] [Indexed: 06/02/2023]
Abstract
The recent introduction of alkali metal halide catalysts for chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) has enabled remarkable two-dimensional (2D) growth. However, the process development and growth mechanism require further exploration to enhance the effects of salts and understand the principles. Herein, simultaneous predeposition of a metal source (MoO3 ) and salt (NaCl) by thermal evaporation is adopted. As a result, remarkable growth behaviors such as promoted 2D growth, easy patterning, and potential diversity of target materials can be achieved. Step-by-step spectroscopy combined with morphological analyses reveals a reaction path for MoS2 growth in which NaCl reacts separately with S and MoO3 to form Na2 SO4 and Na2 Mo2 O7 intermediates, respectively. These intermediates provide a favorable environment for 2D growth, including an enhanced source supply and liquid medium. Consequently, large grains of monolayer MoS2 are formed by self-assembly, indicating the merging of small equilateral triangular grains on the liquid intermediates. This study is expected to serve as an ideal reference for understanding the principles of salt catalysis and evolution of CVD in the preparation of 2D TMDs.
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Affiliation(s)
- Minsu Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Minkyun Son
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Dong-Bum Seo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jin Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Dong In Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Seunghun Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jung-Woo Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Ki-Seok An
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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10
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Wang QB, Xu QQ, Yang MZ, Wu ZS, Xia XC, Yin JZ, Han ZH. Vapor-Liquid-Solid Growth of Site-Controlled Monolayer MoS 2 Films Via Pressure-Induc ed Supercritical Phase Nucleation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17396-17405. [PMID: 36950967 DOI: 10.1021/acsami.3c01407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, a novel pressure-induced supercritical phase nucleation method is proposed to synthesize monolayer MoS2 films, which is promoter free and can avoid contamination of films derived from these heterogeneous promoters in most of the existing techniques. The low-crystallinity and size-controlled MoO2(acac)2 particles are recrystallized on the substrate via the pressure-sensitive solvent capacity of supercritical CO2 and these particles are used as growth sites. The size of single-crystal MoS2 on the substrate is found to be dependent on the wetting area of the pyrolyzed precursor droplets (MoO2) on the surface, and the formation of continuous films with high coverage is mainly controlled by the coalescence of MoO2 droplets. It is enhanced by the increase of the nucleation site density, which can be adjusted by the supersaturation of the supercritical fluid solution. Our findings pave a new way for the controllable growth of MoS2 and other two-dimensional materials and provide sufficient and valuable evidence for vapor-liquid-solid growth.
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Affiliation(s)
- Qi-Bo Wang
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Qin-Qin Xu
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Ming-Zhe Yang
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Zhong-Shuai Wu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, 116024 Dalian, China
| | - Xiao-Chuan Xia
- School of Physics & School of Microelectronics, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Jian-Zhong Yin
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Zhen-Hua Han
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
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11
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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12
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Damage-free LED lithography for atomically thin 2D material devices. Sci Rep 2023; 13:2583. [PMID: 36788343 PMCID: PMC9929066 DOI: 10.1038/s41598-023-29281-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Accepted: 02/01/2023] [Indexed: 02/16/2023] Open
Abstract
Desired electrode patterning on two-dimensional (2D) materials is a foremost step for realizing the full potentials of 2D materials in electronic devices. Here, we introduce an approach for damage-free, on-demand manufacturing of 2D material devices using light-emitting diode (LED) lithography. The advantage of this method lies in mild photolithography by simply combining an ordinary optical microscope with a commercially available LED projector; the low-energy red component is utilized for optical characterization and alignment of devices, whereas the high-energy blue component is utilized for photoresist exposure and development of personal computer designed electrode patterns. This method offers maskless, damage-free photolithography, which is particularly suitable for 2D materials that are sensitive to conventional lithography. We applied this LED lithography to device fabrication of selected nanosheets (MoS2, graphene oxides and RuO2), and achieved damage-free lithography of various patterned electrodes with feature sizes as small as 1-2 μm. The LED lithography offers a useful approach for cost-effective mild lithography without any costly instruments, high vacuum, or complex operation.
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13
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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14
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Ferrando G, Gardella M, Zambito G, Barelli M, Chowdhury D, Giordano MC, Buatier de Mongeot F. Flat-optics hybrid MoS 2/polymer films for photochemical conversion. NANOSCALE 2023; 15:1953-1961. [PMID: 36625311 DOI: 10.1039/d2nr05004h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Novel light harvesting platforms and strategies are crucial to develop renewable photon to energy conversion technologies that overcome the current global energy and environmental challenges. Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor layers are particularly attractive for photoconversion applications but new ultra-compact photon harvesting schemes are urgently required to mitigate their poor photon absorption properties. Here, we propose a flat-optics scheme based on nanogrooved ultra-thin MoS2 layers conformally grown onto large area (cm2 scale) nanopatterned templates. The subwavelength re-shaping of the 2D-TMD layers promotes the excitation of photonic Rayleigh anomaly (RA) modes, uniquely boosting a strong in-plane electromagnetic confinement. By tailoring the illumination conditions, we demonstrate effective tuning of the photonic anomalies over a broadband visible spectrum across the absorption band of relevant polluting dye molecules. Thanks to the strong photonic in-plane confinement, we achieve a resonant enhancement of the photodissociation rate of methylene blue (MB) molecules, well above a factor of 2. These results highlight the potential of flat-optics photon harvesting schemes for boosting photoconversion efficiency in large-scale hybrid 2D-TMD/polymer layers, with a strong impact in various applications ranging from new-generation photonics to waste water remediation and renewable energy storage.
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Affiliation(s)
- Giulio Ferrando
- Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy.
| | - Matteo Gardella
- Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy.
| | - Giorgio Zambito
- Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy.
| | - Matteo Barelli
- Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy.
| | - Debasree Chowdhury
- Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy.
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15
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Ding D, Wang S, Xia Y, Li P, He D, Zhang J, Zhao S, Yu G, Zheng Y, Cheng Y, Xie M, Ding F, Jin C. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate. ACS NANO 2022; 16:17356-17364. [PMID: 36200750 DOI: 10.1021/acsnano.2c08188] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A mechanistic understanding of interactions between atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., ∼88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., ∼12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, ∼64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (∼36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (∼2.4 Å), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches ∼3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
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Affiliation(s)
- Degong Ding
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yipu Xia
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Pai Li
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Daliang He
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Junqiu Zhang
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Maohai Xie
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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16
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Gan Z, Najafidehaghani E, Han SH, Shradha S, Abtahi F, Neumann C, Picker J, Vogl T, Hübner U, Eilenberger F, George A, Turchanin A. Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications. SMALL METHODS 2022; 6:e2200300. [PMID: 35957515 DOI: 10.1002/smtd.202200300] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Revised: 07/14/2022] [Indexed: 06/15/2023]
Abstract
A simple, large area, and cost-effective soft lithographic method is presented for the patterned growth of high-quality 2D transition metal dichalcogenides (TMDs). Initially, a liquid precursor (Na2 MoO4 in an aqueous solution) is patterned on the growth substrate using the micromolding in capillaries technique. Subsequently, a chemical vapor deposition step is employed to convert the precursor patterns to monolayer, few layers, or bulk TMDs, depending on the precursor concentration. The grown patterns are characterized using optical microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and photoluminescence spectroscopy to reveal their morphological, chemical, and optical characteristics. Additionally, electronic and optoelectronic devices are realized using the patterned TMDs and tested for their applicability in field effect transistors and photodetectors. The photodetectors made of MoS2 line patterns show a very high responsivity of 7674 A W-1 and external quantum efficiency of 1.49 × 106 %. Furthermore, the multiple grain boundaries present in patterned TMDs enable the fabrication of memtransistor devices. The patterning technique presented here may be applied to many other TMDs and related heterostructures, potentially advancing the fabrication of TMDs-based device arrays.
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Affiliation(s)
- Ziyang Gan
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Emad Najafidehaghani
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Seung Heon Han
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Sai Shradha
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
| | - Fatemeh Abtahi
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
| | - Christof Neumann
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Julian Picker
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Tobias Vogl
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Uwe Hübner
- Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745, Jena, Germany
| | - Falk Eilenberger
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
- Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745, Jena, Germany
| | - Antony George
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
| | - Andrey Turchanin
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
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17
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Yang S, Wu J, Wang C, Yan H, Han L, Feng J, Zhang B, Li D, Yu G, Luo B. Molten-droplet-driven growth of MoS 2 flakes with controllable morphology transition for hydrogen evolution reactions. Dalton Trans 2022; 51:13351-13360. [PMID: 35984420 DOI: 10.1039/d2dt02066a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The controllable fabrication of two-dimensional transition-metal dichalcogenides (2D TMDs) and a deep understanding of the corresponding process mechanisms are of fundamental importance for their further applications. In this study, the molten-droplet-driven (MDD) growth of MoS2 based on a Na-Mo-O molten-salt chemical vapor deposition (CVD) method is demonstrated via temperature-dependent dispersion and spreading of droplets on a surface, yielding MoS2 flakes with morphology transition from compact triangles to fractal dendrites with the increase in temperature. By building up the dependence between the formed morphologies of grown MoS2 flakes and the corresponding kinetics during successive growth processes, it was found that the wetting-driven force, which is governed by interface free energies (surface tension) of molten droplets, would largely determine the driven movement of the droplet, and then the formation of different morphologies. Finally, based on these MoS2 flakes, a systematic improvement of the hydrogen evolution reaction (HER) was demonstrated in accordance with the evolution of morphologies from compact to fractal. This study presents an important advance in understanding the growth mechanisms related to the molten-salt-assisted CVD fabrication of 2D TMDs and provides a facile method for tailoring the growth and application of 2D TMDs with controllably trimmed morphologies.
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Affiliation(s)
- Shuai Yang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Jing Wu
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Chao Wang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Hong Yan
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Luoqiao Han
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Jianmin Feng
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Bo Zhang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Dejun Li
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China. .,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Birong Luo
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
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18
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Suzuki H, Hashimoto R, Misawa M, Liu Y, Kishibuchi M, Ishimura K, Tsuruta K, Miyata Y, Hayashi Y. Surface Diffusion-Limited Growth of Large and High-Quality Monolayer Transition Metal Dichalcogenides in Confined Space of Microreactor. ACS NANO 2022; 16:11360-11373. [PMID: 35793540 DOI: 10.1021/acsnano.2c05076] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenides (TMDCs), including MoS2 and WS2, are potential candidates for next-generation semiconducting materials owing to their atomically thin structure and strong optoelectrical responses, which allow for flexible optoelectronic applications. Monolayer TMDCs have been grown utilizing chemical vapor deposition (CVD) techniques. Enhancing the domain size with high crystallinity and forming heterostructures are important topics for practical applications. In this study, the size of monolayer WS2 increased via the vapor-liquid-solid growth-based CVD technique utilizing the confined space of the substrate-stacked microreactor. The use of spin-coated metal salts (Na2WO4 and Na2MoO4) and organosulfur vapor allowed us to precisely control the source supply and investigate the growth in a systematic manner. We obtained a relatively low activation energy for growth (1.02 eV), which is consistent with the surface diffusion-limited growth regime observed in the confined space. Through systematic photoluminescence (PL) analysis, we determined that a growth temperature of ∼820 °C is optimal for producing high-quality WS2 with a narrow PL peak width (∼35 meV). By controlling the source balance of W and S, we obtained large-sized fully monolayered WS2 (∼560 μm) and monolayer WS2 with bilayer spots (∼1100 μm). Combining two distinct sources of transition metals, WS2/MoS2 lateral heterostructures were successfully created. In electrical transport measurements, the monolayer WS2 grown under optimal conditions has a high on-current (∼70 μA/μm), on/off ratio (∼5 × 108), and a field-effect mobility of ∼7 cm2/(V s). The field-effect transistor displayed an intrinsic photoresponse with wavelength selectivity that originated from the photoexcited carriers.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryoki Hashimoto
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Misaki Kishibuchi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kentaro Ishimura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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19
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Liu F, Shi J, Xu J, Han N, Cheng Y, Huang W. Site-selective growth of two-dimensional materials: strategies and applications. NANOSCALE 2022; 14:9946-9962. [PMID: 35802071 DOI: 10.1039/d2nr02093a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Over the years, there have been major advances in two-dimensional (2D) materials on account of their excellent and unique properties. Among the various strategies for 2D material fabrication, chemical vapor deposition (CVD) is considered as the most promising method to achieve large-area and high-quality 2D film growth. Furthermore, to realize the potential applications of 2D materials in different fields, the integration of 2D materials into functional devices is essential. However, the materials made by common CVD are randomly distributed on substrates, which is disadvantageous for fabricating arrays of devices. To solve this problem, a site-selective growth method was developed to meet the requirement of batch production for practical applications because it achieves control over the locations of products and benefits the subsequent direct integration. Herein, state-of-the-art methods for site-selective synthesis, including seeded growth and patterned growth, are reviewed. Then, the electronic and optoelectronic applications of the as-grown 2D materials are also reviewed. Finally, the remaining challenges and future prospects regarding site-selective methods and applications are discussed.
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Affiliation(s)
- Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Jian Shi
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Jinpeng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Yingchun Cheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
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20
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Kim HU, Seok H, Kang WS, Kim T. The first progress of plasma-based transition metal dichalcogenide synthesis: a stable 1T phase and promising applications. NANOSCALE ADVANCES 2022; 4:2962-2972. [PMID: 36133517 PMCID: PMC9417878 DOI: 10.1039/d1na00882j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Accepted: 04/24/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted attention as polymorphs depending on their phases (1T and 2H) when applying typical synthesis methods. The 2H phase is generally synthesised through chemical vapour deposition (CVD) on a wafer-scale at high temperatures, and many synthesis methods have been reported owing to their thermodynamic stability and semiconductor properties. By contrast, although the 1T phase is meta-stable with an octahedral coordination, thereby limiting the use of synthesis methods, the recent structural advantage in terms of the hydrogen evolution reaction (HER) has been emphasised. Despite this demand, no large-area thin-film synthesis method for 1T-TMDs has been developed. Among several strategies of synthesizing metallic-phase (1T) TMDs, chemical exfoliation (alkali metal intercalation) is a major strategy and others have been used for electron-beam irradiation, laser irradiation, defects, plasma hot electron transfer, and mechanical strain. Therefore, we suggest an innovative synthesis method using plasma-enhanced CVD (PECVD) for both the 1T and 2H phases of TMDs (MoS2 and WS2). Because ions and radicals are accelerated to the substrate within the sheath region, a high-temperature source is not needed for vapour ionisation, and thus the process temperature can be significantly lowered (150 °C). Moreover, a 4-inch wafer-scale of a thin film is an advantage and can be synthesised on arbitrary substrates (SiO2/Si wafer, glassy carbon electrode, Teflon, and polyimide). Furthermore, the PECVD method was applied to TMD-graphene heterostructure films with a graphene-transferred substrate, and for the first time, sequential metal seed layer depositions of W (1 nm) and Mo (1 nm) were sulfurized to MoS2-WS2 vertical heterostructures with Ar + H2S plasma. We considered the prospects and challenges of the new PECVD method in the development of practical applications in next-generation integrated electronics, HER catalysts, and flexible biosensors.
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Affiliation(s)
- Hyeong-U Kim
- Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM) Daejeon 34103 Korea
| | - Hyunho Seok
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University Suwon 16419 Korea
| | - Woo Seok Kang
- Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM) Daejeon 34103 Korea
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University Suwon 16419 Korea
- School of Mechanical Engineering, Sungkyunkwan University Suwon 16419 Korea
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21
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Wang B, Zhao C, Wang C, Li R, Zhang G, Mu R, Fu Q. Low-temperature growth of ultrathin and epitaxial Mo 2C nanosheets via a vapor-liquid-solid process. NANOSCALE 2022; 14:9142-9149. [PMID: 35723539 DOI: 10.1039/d2nr02389j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to the unique physical and chemical properties, transition metal carbides (TMCs) have many potential applications in the fields of energy conversion and catalysis. Chemical vapor deposition (CVD) is a promising method to synthesize TMCs. However, spatially inhomogeneous supply of transition metal precursor vapor in the normal CVD process generally leads to poor control of the morphology and uniformity of the products. Here, we report a vapor-liquid-solid (VLS) growth process where non-volatile Na2MoO4 is used to act as a liquid precursor for the growth of uniform ultrathin Mo2C nanosheets on Al2O3(0001). The morphology of the nanosheets can be controlled by tuning the precursor concentration, annealing time and growth temperature. The roles of Na and the liquid-solid interface in consolidating Mo atoms and promoting the epitaxial growth of Mo2C nanosheets are demonstrated. Furthermore, we show that the liquid-solid interface can cause the crystalline phase transition of Mo2C nanosheets through verification experiments.
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Affiliation(s)
- Bin Wang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou, 121013, China
| | - Changbao Zhao
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
| | - Chao Wang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
| | - Rongtan Li
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
| | - Guohui Zhang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
| | - Rentao Mu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
| | - Qiang Fu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
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22
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Singh M, Ghosh R, Chen YS, Yen ZL, Hofmann M, Chen YF, Hsieh YP. Chemical vapor deposition merges MoS 2 grains into high-quality and centimeter-scale films on Si/SiO 2. RSC Adv 2022; 12:5990-5996. [PMID: 35424587 PMCID: PMC8982092 DOI: 10.1039/d1ra06933k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Accepted: 12/07/2021] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional molybdenum disulfide (MoS2) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS2-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS2 can be directly produced on Si/SiO2 at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS2 domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS2 photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS2 for future applications. Control of the precursor transport through oxygen dosing yields increased MoS2 coverage and increased connectivity between crystalline MoS2 domains.![]()
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Affiliation(s)
- Mukesh Singh
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Rapti Ghosh
- Department of Physics, National Central University Chung Li 320 Taiwan.,Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan .,Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica Taipei 115 Taiwan
| | - Yu-Siang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan .,Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica Taipei 115 Taiwan
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23
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Abstract
Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.
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Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
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24
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Brune V, Grosch M, Weißing R, Hartl F, Frank M, Mishra S, Mathur S. Influence of the choice of precursors on the synthesis of two-dimensional transition metal dichalcogenides. Dalton Trans 2021; 50:12365-12385. [PMID: 34318836 DOI: 10.1039/d1dt01397a] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The interest in transition metal dichalcogenides (TMDCs; MEy/2; M = transition metal; E = chalcogenide, y = valence of the metal) has grown exponentially across various science and engineering disciplines due to their unique structural chemistry manifested in a two-dimensional lattice that results in extraordinary electronic and transport properties desired for applications in sensors, energy storage and optoelectronic devices. Since the properties of TMDCs can be tailored by changing the stacking sequence of 2D monolayers with similar or dis-similar materials, a number of synthetic routes essentially based on the disintegration of bulk (e.g., chemical exfoliation) or the integration of atomic constituents (e.g., vapor phase growth) have been explored. Despite a large body of data available on the chemical synthesis of TMDCs, experimental strategies with high repeatability of control over film thickness, phase and compositional purity remain elusive, which calls for innovative synthetic concepts offering, for instance, self-limited growth in the z-direction and homogeneous lateral topography. This review summarizes the recent conceptual advancements in the growth of layered van der Waals TMDCs from both mixtures of metal and chalcogen sources (multi-source precursors; MSPs) and from molecular compounds containing metals and chalcogens in one starting material (single-source precursor; SSPs). The critical evaluation of the strengths, limitations and opportunities of MSP and SSP approaches is provided as a guideline for the fabrication of TMDCs from commercial and customized molecular precursors. For example, alternative synthetic pathways using tailored molecular precursors circumvent the challenges of differential nucleation and crystal growth kinetics that are invariably associated with conventional gas phase chemical vapor transport (CVT) and chemical vapor deposition (CVD) of a mixture of components. The aspects of achieving high compositional purity and alternatives to minimize competing reactions or side products are discussed in the context of efficient chemical synthesis of TMDCs. Moreover, a critical analysis of the potential opportunities and existing bottlenecks in the synthesis of TMDCs and their intrinsic properties is provided.
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Affiliation(s)
- Veronika Brune
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Matthias Grosch
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - René Weißing
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Fabian Hartl
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Michael Frank
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Shashank Mishra
- Université Claude Bernard Lyon 1, CNRS, UMR 5256, IRCELYON, 2 avenue Albert Einstein, 69626 Villeurbanne, France.
| | - Sanjay Mathur
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
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25
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Li J, Wang S, Jiang Q, Qian H, Hu S, Kang H, Chen C, Zhan X, Yu A, Zhao S, Zhang Y, Chen Z, Sui Y, Qiao S, Yu G, Peng S, Jin Z, Liu X. Single-Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100743. [PMID: 34145739 DOI: 10.1002/smll.202100743] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 03/11/2021] [Indexed: 06/12/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2 ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoji Qian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shike Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - He Kang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyi Zhan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Aobo Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Songang Peng
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhi Jin
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinyu Liu
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
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26
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Wang Q, Shi R, Zhao Y, Huang R, Wang Z, Amini A, Cheng C. Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides. NANOSCALE ADVANCES 2021; 3:3430-3440. [PMID: 36133721 PMCID: PMC9417528 DOI: 10.1039/d1na00171j] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2021] [Accepted: 05/04/2021] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale for commercial uses. However, the CVD-grown TMD samples often suffer from poor quality due to the improper control of reaction kinetics and lack of understanding about the phenomenon. In this review, we focus on several key challenges in the controllable CVD fabrication of high-quality wafer-scale TMD films and highlight the importance of the control of precursor concentration, nucleation density, and oriented growth. The remaining difficulties in the field and prospective directions of the related topics are further summarized.
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Affiliation(s)
- Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology Hong Kong People's Republic of China
| | - Yaxuan Zhao
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Runqing Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Zixu Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University Kingswood NSW 2751 Australia
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
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27
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Zhang D, Wen C, Mcclimon JB, Masih Das P, Zhang Q, Leone GA, Mandyam SV, Drndić M, Johnson ATC, Zhao MQ. Rapid Growth of Monolayer MoSe 2 Films for Large-Area Electronics. ADVANCED ELECTRONIC MATERIALS 2021; 7:2001219. [PMID: 36111247 PMCID: PMC9473491 DOI: 10.1002/aelm.202001219] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The large-scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large-area monolayer MoSe2 films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe2 films up to a few inches in size are obtained within a short growth time of 5 min. The as-grown monolayer MoSe2 films are of high quality with large grain size (up to 120 μm). Arrays of field-effect transistors are fabricated from the MoSe2 films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm2 V-1 s-1 and on/off ratios of ≈105. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large-scale applications.
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Affiliation(s)
- Danzhen Zhang
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chengyu Wen
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
- Department of Electrical and System Engineering, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104, USA
| | - John Brandon Mcclimon
- Department of Mechanical Engineering & Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Paul Masih Das
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Qicheng Zhang
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Grace A Leone
- Department of Chemistry, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - Srinivas V Mandyam
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Alan T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Meng-Qiang Zhao
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA
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28
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Li S, Hong J, Gao B, Lin Y, Lim HE, Lu X, Wu J, Liu S, Tateyama Y, Sakuma Y, Tsukagoshi K, Suenaga K, Taniguchi T. Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2004438. [PMID: 34105285 PMCID: PMC8188190 DOI: 10.1002/advs.202004438] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Revised: 01/24/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.
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Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Jinhua Hong
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Bo Gao
- Center for Green Research on Energy and Environmental Materials (GREEN)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Yung‐Chang Lin
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Hong En Lim
- Department of PhysicsTokyo Metropolitan UniversityHachioji192‐0397Japan
| | - Xueyi Lu
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Jing Wu
- Institute of Materials Research and EngineeringAgency for ScienceTechnology and ResearchSingapore138634Singapore
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN)College of Chemistry and Chemical EngineeringHunan UniversityChangsha410082P. R. China
| | - Yoshitaka Tateyama
- Center for Green Research on Energy and Environmental Materials (GREEN)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Yoshiki Sakuma
- Research Center for Functional MaterialsNational Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Kazuhito Tsukagoshi
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Kazu Suenaga
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Takaaki Taniguchi
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
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29
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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30
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Izquierdo N, Myers JC, Golani P, De Los Santos A, Seaton NCA, Koester SJ, Campbell SA. Growth of black arsenic phosphorus thin films and its application for field-effect transistors. NANOTECHNOLOGY 2021; 32:325601. [PMID: 33906169 DOI: 10.1088/1361-6528/abfc09] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2020] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 × 110μmand ranging from 200 nm to 2μmthick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2V-1s-1atVd= -0.9 V andVg= -60 V.
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Affiliation(s)
- Nezhueyotl Izquierdo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, United States of America
| | - Jason C Myers
- Characterization Facility, University of Minnesota, Minneapolis, United States of America
| | - Prafful Golani
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, United States of America
| | - Adonica De Los Santos
- Department of Mechanical Engineering, University of Texas Rio Grande Valley, Edinburg, United States of America
| | - Nicholas C A Seaton
- Characterization Facility, University of Minnesota, Minneapolis, United States of America
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, United States of America
| | - Stephen A Campbell
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, United States of America
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31
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Liu Y, Gu F. A wafer-scale synthesis of monolayer MoS 2 and their field-effect transistors toward practical applications. NANOSCALE ADVANCES 2021; 3:2117-2138. [PMID: 36133770 PMCID: PMC9419721 DOI: 10.1039/d0na01043j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Accepted: 02/17/2021] [Indexed: 05/11/2023]
Abstract
Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.
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Affiliation(s)
- Yuchun Liu
- Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
| | - Fuxing Gu
- Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
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32
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Bai X, Li S, Das S, Du L, Dai Y, Yao L, Raju R, Du M, Lipsanen H, Sun Z. Single-step chemical vapour deposition of anti-pyramid MoS 2/WS 2 vertical heterostructures. NANOSCALE 2021; 13:4537-4542. [PMID: 33599628 DOI: 10.1039/d0nr08281c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 μm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.
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Affiliation(s)
- Xueyin Bai
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Japan
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Luojun Du
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Yunyun Dai
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Lide Yao
- Department of Applied Physics, Aalto University, Finland
| | - Ramesh Raju
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Mingde Du
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Finland. and QTF Centre of Excellence, Department of Applied Physics, Aalto University, Finland
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33
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Cai Z, Lai Y, Zhao S, Zhang R, Tan J, Feng S, Zou J, Tang L, Lin J, Liu B, Cheng HM. Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides. Natl Sci Rev 2021; 8:nwaa115. [PMID: 34691588 PMCID: PMC8288458 DOI: 10.1093/nsr/nwaa115] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Revised: 04/20/2020] [Accepted: 05/18/2020] [Indexed: 12/24/2022] Open
Abstract
Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called 'dissolution-precipitation' (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.
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Affiliation(s)
- Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Zou
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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34
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Mojtabavi M, VahidMohammadi A, Ganeshan K, Hejazi D, Shahbazmohamadi S, Kar S, van Duin ACT, Wanunu M. Wafer-Scale Lateral Self-Assembly of Mosaic Ti 3C 2T x MXene Monolayer Films. ACS NANO 2021; 15:625-636. [PMID: 33405898 DOI: 10.1021/acsnano.0c06393] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Bottom-up assembly of two-dimensional (2D) materials into macroscale morphologies with emergent properties requires control of the material surroundings, so that energetically favorable conditions direct the assembly process. MXenes, a class of recently developed 2D materials, have found new applications in areas such as electrochemical energy storage, nanoscale electronics, sensors, and biosensors. In this paper, we present a lateral self-assembly method for wafer-scale deposition of a mosaic-type 2D MXene flake monolayer that spontaneously orders at the interface between two immiscible solvents. ReaxFF molecular dynamics simulations elucidate the interactions of a MXene flake with the solvents and its stability at the liquid/liquid interface, the prerequisite for MXene flakes self-assembly at the interface. Moreover, facile transfer of this monolayer onto a flat substrate (Si, glass) results in high-coverage monolayer films with uniform thickness and homogeneous optical properties. Multiscale characterization of the resulting films reveals the mosaic structure and sheds light on the electronic properties of the films, which exhibit good electrical conductivity over cm-scale areas.
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Affiliation(s)
- Mehrnaz Mojtabavi
- Department of Bioengineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Armin VahidMohammadi
- Innovation Partnership Building, UConn TechPark, University of Connecticut, Storrs, Connecticut 06269, United States
| | - Karthik Ganeshan
- Department of Mechanical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Davoud Hejazi
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Sina Shahbazmohamadi
- Innovation Partnership Building, UConn TechPark, University of Connecticut, Storrs, Connecticut 06269, United States
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Adri C T van Duin
- Department of Mechanical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Meni Wanunu
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
- Department of Chemistry and Chemical Biology, Northeastern University, Boston, Massachusetts 02115, United States
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35
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Lim HE, Nakanishi Y, Liu Z, Pu J, Maruyama M, Endo T, Ando C, Shimizu H, Yanagi K, Okada S, Takenobu T, Miyata Y. Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires. NANO LETTERS 2021; 21:243-249. [PMID: 33307702 DOI: 10.1021/acs.nanolett.0c03456] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.
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Affiliation(s)
- Hong En Lim
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Chisato Ando
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Hiroshi Shimizu
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
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36
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Jiang X, Chen F, Zhao S, Su W. Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides. CrystEngComm 2021. [DOI: 10.1039/d1ce01289d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
This review summarizes recent advances in the controllable CVD growth of 2D TMDC vertical heterostructures under four different strategies.
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Affiliation(s)
- Xia Jiang
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Fei Chen
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Shichao Zhao
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
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37
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Cheng Z, He S, Han X, Wang M, Zhang S, Liu S, Liang G, Zhang S, Xia M. Interfaces determine the nucleation and growth of large NbS 2 single crystals. CrystEngComm 2021. [DOI: 10.1039/d0ce01393e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The synthesis of large NbS2 single crystals benefits from Na–Nb–O droplet interfaces, which reduces nucleation density and increases growth rate.
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Affiliation(s)
- Zhaofang Cheng
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shaodan He
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Xiaona Han
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Min Wang
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shimin Zhang
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shiru Liu
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Gongying Liang
- Department of Material Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shengli Zhang
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Minggang Xia
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
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38
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Jones A, Mistry K, Kao M, Shahin A, Yavuz M, Musselman KP. In-situ spatial and temporal electrical characterization of ZnO thin films deposited by atmospheric pressure chemical vapour deposition on flexible polymer substrates. Sci Rep 2020; 10:19947. [PMID: 33203953 PMCID: PMC7672091 DOI: 10.1038/s41598-020-76993-4] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 10/12/2020] [Indexed: 12/02/2022] Open
Abstract
A technique is presented for collecting data on both the spatial and temporal variations in the electrical properties of a film as it is deposited on a flexible substrate. A flexible printed circuit board substrate with parallel electrodes distributed across its surface was designed. Zinc oxide films were then deposited on the flexible substrate at different temperatures via atmospheric pressure chemical vapour deposition (AP-CVD) using a spatial atomic layer deposition system. AP-CVD is a promising high-throughput thin film deposition technique with applications in flexible electronics. Collecting data on the film properties in-situ allows us to directly observe how deposition conditions affect the evolution of those properties in real-time. The spatial uniformity of the growing film was monitored, and the various stages of film nucleation and growth on the polymer substrate were observed. The measured resistance of the films was observed to be very high until a critical amount of material has been deposited, consistent with Volmer-Weber growth. Furthermore, monitoring the film resistance during post-deposition cooling enabled immediate identification of metallic or semiconducting behaviour within the conductive ZnO films. This technique allows for a more complete understanding of metal chalcogen film growth and properties, and the high volume of data generated will be useful for future implementations of machine-learning directed materials science.
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Affiliation(s)
- Alexander Jones
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada
| | - Kissan Mistry
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada
| | - Manfred Kao
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada
| | - Ahmed Shahin
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada
| | - Mustafa Yavuz
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada
| | - Kevin P Musselman
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada.
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada.
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39
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Wang Y, Ghotbi M, Das S, Dai Y, Li S, Hu X, Gan X, Zhao J, Sun Z. Difference frequency generation in monolayer MoS 2. NANOSCALE 2020; 12:19638-19643. [PMID: 32524108 DOI: 10.1039/d0nr01994a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Difference frequency generation has long been employed for numerous applications, such as coherent light generation, sensing and imaging. Here, we demonstrate difference frequency generation down to atomic thickness in monolayer molybdenum disulfide. By mixing femtosecond optical pulses at wavelength of 406 nm with tunable pulses in the spectral range of 1300-1520 nm, we generate tunable pulses across the spectral range of 550-590 nm with frequency conversion efficiency up to ∼2 × 10-4. The second-order nonlinear optical susceptibility of monolayer molybdenum disulfide, χ, is calculated as ∼1.8 × 10-8 m V-1, comparable to the previous results demonstrated with second harmonic generation. Such a highly efficient down-conversion nonlinear optical process in two-dimensional layered materials may open new ways to their nonlinear optical applications, such as coherent light generation and amplification.
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Affiliation(s)
- Yadong Wang
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
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40
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Chang MC, Ho PH, Tseng MF, Lin FY, Hou CH, Lin IK, Wang H, Huang PP, Chiang CH, Yang YC, Wang IT, Du HY, Wen CY, Shyue JJ, Chen CW, Chen KH, Chiu PW, Chen LC. Fast growth of large-grain and continuous MoS 2 films through a self-capping vapor-liquid-solid method. Nat Commun 2020; 11:3682. [PMID: 32703950 PMCID: PMC7378841 DOI: 10.1038/s41467-020-17517-6] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2019] [Accepted: 07/01/2020] [Indexed: 11/12/2022] Open
Abstract
Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V−1 s−1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 108) across a 1.5 cm × 1.5 cm region. Here, the authors develop a self-capping vapour-liquid-solid reaction to fabricate large-grain continuous MoS2 films, whereby an intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by sulphurisation into MoS2.
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Affiliation(s)
- Ming-Chiang Chang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.,Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Po-Hsun Ho
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 106, Taiwan. .,Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
| | - Mao-Feng Tseng
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.,Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Fang-Yuan Lin
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.,Department of Chemistry, National Taiwan Normal University, Taipei, 116, Taiwan
| | - Cheng-Hung Hou
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - I-Kuan Lin
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Hsin Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.,Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Pin-Pin Huang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.,Department of Chemistry, National Taiwan Normal University, Taipei, 116, Taiwan
| | - Chun-Hao Chiang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Yueh-Chiang Yang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - I-Ta Wang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - He-Yun Du
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan
| | - Cheng-Yen Wen
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 106, Taiwan.,Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Chun-Wei Chen
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 106, Taiwan.,Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Kuei-Hsien Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
| | - Po-Wen Chiu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan. .,Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
| | - Li-Chyong Chen
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 106, Taiwan. .,Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan.
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41
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Taniguchi T, Nurdiwijayanto L, Li S, Lim HE, Miyata Y, Lu X, Ma R, Tang DM, Ueda S, Tsukagoshi K, Sasaki T, Osada M. On/Off Boundary of Photocatalytic Activity between Single- and Bilayer MoS 2. ACS NANO 2020; 14:6663-6672. [PMID: 32396324 DOI: 10.1021/acsnano.9b09253] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Molecularly thin two-dimensional (2D) semiconductors are emerging as photocatalysts owing to their layer-number-dependent quantum effects and high charge separation efficiency. However, the correlation among the dimensionality, crystallinity, and photocatalytic activity of such 2D nanomaterials remains unclear. Herein, a Ag photoreduction technique coupled with microscopic analyses is employed to spatially resolve the photocatalytic activity of MoS2 as a model catalyst. Interestingly, we find that only monolayer (1L)-MoS2 is active for a Ag photoreduction reaction. The photocatalytic activity of 1L-MoS2 is enhanced by a built-in electrical field originated from the MoS2/SiO2 interface, instead of by the specific surface structure and quantum electronic state of 1L-MoS2. Furthermore, we observe photocatalytic active sites to be geometrically distributed on triangular 1L-MoS2 crystals, wherein the Ag particles are preferentially deposited on the outermost zigzag edges and defective inner parts of the triangular grains. The degradation of photocatalytic activity and electron mobility with the formation of Mo(VI) species indicates that the species inhibit the in-plane diffusion of the photogenerated electrons to the reductive sites. The monolayer-selectivity, activation, and inactivation mechanisms, unveiled in this work, will offer future directions in designing 2D nanophotocatalysts.
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Affiliation(s)
- Takaaki Taniguchi
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Leanddas Nurdiwijayanto
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Hong En Lim
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Xueyi Lu
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Renzhi Ma
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Dang-Ming Tang
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Shigenori Ueda
- Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Sayo, Hyogo 679-5148, Japan
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Kazuhito Tsukagoshi
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takayoshi Sasaki
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Minoru Osada
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Institute of Materials and Systems for Sustainability, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan
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42
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Development of a quantitative, portable, and automated fluorescent blue-ray device-based malaria diagnostic equipment with an on-disc SiO 2 nanofiber filter. Sci Rep 2020; 10:6585. [PMID: 32313065 PMCID: PMC7171072 DOI: 10.1038/s41598-020-63615-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Accepted: 04/03/2020] [Indexed: 12/04/2022] Open
Abstract
There is an urgent need to develop an automated malaria diagnostic system that can easily and rapidly detect malaria parasites and determine the proportion of malaria-infected erythrocytes in the clinical blood samples. In this study, we developed a quantitative, mobile, and fully automated malaria diagnostic system equipped with an on-disc SiO2 nanofiber filter and blue-ray devices. The filter removes the leukocytes and platelets from the blood samples, which interfere with the accurate detection of malaria by the blue-ray devices. We confirmed that the filter, which can be operated automatically by centrifugal force due to the rotation of the disc, achieved a high removal rate of leukocytes (99.7%) and platelets (90.2%) in just 30 s. The automated system exhibited a higher sensitivity (100%) and specificity (92.8%) for detecting Plasmodium falciparum from the blood of 274 asymptomatic individuals in Kenya when compared to the common rapid diagnosis test (sensitivity = 98.1% and specificity = 54.8%). This indicated that this system can be a potential alternative to conventional methods used at local health facilities, which lack basic infrastructure.
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Liu H, Qi G, Tang C, Chen M, Chen Y, Shu Z, Xiang H, Jin Y, Wang S, Li H, Ouzounian M, Hu TS, Duan H, Li S, Han Z, Liu S. Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13174-13181. [PMID: 32103663 DOI: 10.1021/acsami.9b22397] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Growth of large-area, uniform, and high-quality monolayer transition-metal dichalcogenides (TMDs) for practical and industrial applications remains a long-standing challenge. The present study demonstrates a modified predeposited chemical vapor deposition (CVD) process by employing an annealing procedure before sulfurization, which helps in achieving large-area, highly uniform, and high-quality TMDs on various substrates. The annealing procedure resulted in a molten liquid state of the precursors in the CVD process, which not only facilitated a uniform redistribution of the precursor on the substrate (avoid the aggregation) because of the uniform redistribution of the liquid precursor on the substrate but more importantly avoided the undesired multilayer growth via the self-limited lateral supply precursors mechanism. A 2 in. uniform and continuous monolayer WS2 film has been synthesized on the SiO2/Si substrate. Moreover, uniform monolayer WS2 single crystals can be prepared on more general and various substrates including sapphire, mica, quartz, and Si3N4 using the same growth procedure. Besides, this growth mechanism can be generalized to synthesize other monolayer TMDs such as MoS2 and MoS2/WS2 heterostructures. Hence, the present method provides a generalized attractive strategy to grow large-area, uniform, single-layer two-dimensional (2D) materials. This study has significant implications in the advancement of batch production of various 2D-material-based devices for industrial and commercial applications.
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Affiliation(s)
- Hang Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Guopeng Qi
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Caisheng Tang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China
| | - Yang Chen
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Zhiwen Shu
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Haiyan Xiang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yuanyuan Jin
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Miray Ouzounian
- Department of Mechanical Engineering, California State University, Los Angeles, California 90032, United States
| | - Travis Shihao Hu
- Department of Mechanical Engineering, California State University, Los Angeles, California 90032, United States
| | - Huigao Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
| | - Zheng Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
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