Environment-Driven Variability in Absolute Band Edge Positions and Work Functions of Reduced Ceria

The absolute band edge positions and work function (Φ) are the key electronic properties of metal oxides that determine their performance in electronic devices and photocatalysis. However, experimental measurements of these properties often show notable variations, and the mechanisms underlying these discrepancies remain inadequately understood. In this work, we focus on ceria (CeO2), a material renowned for its outstanding oxygen storage capacity, and combine theoretical and experimental techniques to demonstrate environmental modifications of its ionization potential (IP) and Φ. Under O-deficient conditions, reduced ceria exhibits a decreased IP and Φ with significant sensitivity to defect distributions. In contrast, the IP and Φ are elevated in O-rich conditions due to the formation of surface peroxide species. Surface adsorbates and impurities can further augment these variabilities under realistic conditions. We rationalize the shifts in energy levels by separating the individual contributions from bulk and surface factors, using hybrid quantum mechanical/molecular mechanical (QM/MM) embedded-cluster and periodic density functional theory (DFT) calculations supported by interatomic-potential-based electrostatic analyses. Our results highlight the critical role of on-site electrostatic potentials in determining the absolute energy levels in metal oxides, implying a dynamic evolution of band edges under catalytic conditions.

Coexistence of Ferromagnetism and Superconductivity at KTaO3 Heterointerfaces

The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.

Electronic-grade epitaxial (111) KTaO3 heterostructures

KTaO3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO3 and KTaO3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO3-based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.

A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides

Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, a novel approach is reported to grow chalcogenides-hybrid pulsed laser deposition-wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides, and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. This work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.

Local symmetry-driven interfacial magnetization and electronic states in (ZnO)n/(w-FeO)n superlattices

Superlattices constructed with the wide-band-gap semiconductor ZnO and magnetic oxide FeO, both in the wurtzite structure, have been investigated using spin-polarized first-principles calculations. The structural, electronic and magnetic properties of the (ZnO)n/(w-FeO)n superlattices were studied in great detail. Two different interfaces in the (ZnO)n/(w-FeO)n superlattices were identified and they showed very different magnetic and electronic properties. Local symmetry-driven interfacial magnetization and electronic states can arise from different Fe/Zn distributions at different interfaces or spin ordering of Fe in the superlattice. The local symmetry-driven interfacial magnetization and electronic states, originating either from different Fe/Zn distribution across interfaces I and II, or by spin ordering of Fe in the superlattice, can be identified. It was also found that, in the case of the ferromagnetic phase, the electrons are more delocalized for the majority spin but strongly localized for the minority spin, which resulted in interesting spin-dependent transport properties. Our results will pave the way for designing novel spin-dependent electronic devices through the construction of superlattices from semiconductors and multiferroics.

Band Alignment of Oxides by Learnable Structural-Descriptor-Aided Neural Network and Transfer Learning

The band alignment of semiconductors, insulators, and dielectrics is relevant to diverse material properties and device structures utilizing their surfaces and interfaces. In particular, the ionization potential and electron affinity are fundamental quantities that describe surface-dependent band-edge positions with respect to the vacuum level. Their accurate and systematic determination, however, demands elaborate experiments or simulations for well-characterized surfaces. Here, we report machine learning for the band alignment of nonmetallic oxides using a high-throughput first-principles calculation data set containing about 3000 oxide surfaces. Our neural network accurately predicts the band positions for relaxed surfaces of binary oxides simply by using the information on bulk structures and surface termination planes. Moreover, we extend the model to naturally include multiple-cation effects and transfer it to ternary oxides. The present approach enables the band alignment of a vast number of solid surfaces, thereby opening the way to a systematic understanding and materials screening.

Crystal-chemical origins of the ultrahigh conductivity of metallic delafossites

Despite their highly anisotropic complex-oxidic nature, certain delafossite compounds (e.g., PdCoO2, PtCoO2) are the most conductive oxides known, for reasons that remain poorly understood. Their room-temperature conductivity can exceed that of Au, while their low-temperature electronic mean-free-paths reach an astonishing 20 μm. It is widely accepted that these materials must be ultrapure to achieve this, although the methods for their growth (which produce only small crystals) are not typically capable of such. Here, we report a different approach to PdCoO2 crystal growth, using chemical vapor transport methods to achieve order-of-magnitude gains in size, the highest structural qualities yet reported, and record residual resistivity ratios ( > 440). Nevertheless, detailed mass spectrometry measurements on these materials reveal that they are not ultrapure in a general sense, typically harboring 100s-of-parts-per-million impurity levels. Through quantitative crystal-chemical analyses, we resolve this apparent dichotomy, showing that the vast majority of impurities are forced to reside in the Co-O octahedral layers, leaving the conductive Pd sheets highly pure (∼1 ppm impurity concentrations). These purities are shown to be in quantitative agreement with measured residual resistivities. We thus conclude that a sublattice purification mechanism is essential to the ultrahigh low-temperature conductivity and mean-free-path of metallic delafossites.

Resurrected and Tunable Conductivity and Ferromagnetism in the Secondary Growth La0.7Ca0.3MnO3 on Transferred SrTiO3 Membranes

To avoid the epitaxy dilemma in various thin films, such as complex oxide, silicon, organic, metal/alloy, etc., their stacking at an atomic level and secondary growth are highly desired to maximize the functionality of a promising electronic device. The ceramic nature of complex oxides and the demand for accurate and long-range-ordered stoichiometry face severe challenges. Here, the transport and magnetic properties of the La0.7Ca0.3MnO3 (LCMO) secondary growth on single-crystal freestanding SrTiO3 (STO) membranes are demonstrated. It has been experimentally found that on an only 10 nm thick STO membrane, the LCMO can offer a bulk-like Curie temperature (TC) of 253 K and negative magnetoresistance of -64%, with a weak dependence on the thickness. The resurrected conductivity and ferromagnetism in LCMO confirm the advantages of secondary growth, which benefits from the excellent flexibility and transferability. Additionally, this study explores the integration strategy of complex oxides with other functional materials.

Super-tetragonal Sr4Al2O7 as a sacrificial layer for high-integrity freestanding oxide membranes

Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, "super-tetragonal" Sr4Al2O7 (SAOT). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.

Charge Transfer and Orbital Reconstruction at an Organic-Oxide Interface

The two-dimensional electron system (2DES) located at the surface of strontium titanate (STO) and at several other STO-based interfaces has been an established platform for the study of novel physical phenomena since its discovery. Here we report how the interfacing of STO and tetracyanoquinodimethane (TCNQ) results in a charge transfer that depletes the number of free carriers at the STO surface, with a strong impact on its electronic structure. Our study paves the way for efficient tuning of the electronic properties, which promises novel applications in the framework of oxide/organic-based electronics.

Combined Theoretical and Experimental Study of the Moiré Dislocation Network at the SrTiO3-(La,Sr)(Al,Ta)O3 Interface

Recently, a highly ordered Moiré dislocation lattice was identified at the interface between a SrTiO3 (STO) thin film and the (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) substrate. A fundamental understanding of the local ionic and electronic structures around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here, we combine experimental characterization via analytical scanning transmission electron microscopy with results of molecular dynamics and density functional theory calculations to gain insights into the structure and defect chemistry of these dislocation arrays. Our results show that these dislocations lead to undercoordinated Ta/Al cations at the dislocation core, where oxygen vacancies can easily be formed, further facilitated by the presence of cation vacancies. The reduced Ti3+ observed experimentally at the dislocations by electron energy-loss spectroscopy is a consequence of both the structure of the dislocation itself and of the electron doping due to oxygen vacancy formation. Finally, the experimentally observed Ti diffusion into the LSAT around the dislocation core occurs only together with cation vacancy formation in the LSAT or Ta diffusion into STO.

Tuning Ionic Conductivity in Fluorite Gd-Doped CeO2-Bixbyite RE2O3 (RE = Y and Sm) Multilayer Thin Films by Controlling Interfacial Strain

Interfacial strain in heteroepitaxial oxide thin films is a powerful tool for discovering properties and recognizing the potential of materials performance. Particularly, facilitating ion conduction by interfacial strain in oxide multilayer thin films has always been seen to be a highly promising route to this goal. However, the effect of interfacial strain on ion transport properties is still controversial due to the difficulty in deconvoluting the strain contribution from other interfacial phenomena, such as space charge effects. Here, we show that interfacial strain can effectively tune the ionic conductivity by successfully growing multilayer thin films composed of an ionic conductor Gd-doped CeO2 (GDC) and an insulator RE2O3 (RE = Y and Sm). In contrast to compressively strained GDC-Y2O3 multilayer films, tensile strained GDC-Sm2O3 multilayer films demonstrate the enhanced ionic conductivity of GDC, which is attributed to the increased concentration of oxygen vacancies. In addition, we demonstrate that increasing the number of interfaces has no impact on the further enhancement of the ionic conductivity in GDC-Sm2O3 multilayer films. Our findings demonstrate the unambiguous role of interfacial strain on ion conduction of oxides and provide insights into the rational design of fast ion conductors through interface engineering.

Spontaneous rotational symmetry breaking in KTaO3 heterointerface superconductors

Broken symmetries play a fundamental role in superconductivity and influence many of its properties in a profound way. Understanding these symmetry breaking states is essential to elucidate the various exotic quantum behaviors in non-trivial superconductors. Here, we report an experimental observation of spontaneous rotational symmetry breaking of superconductivity at the heterointerface of amorphous (a)-YAlO₃/KTaO₃(111) with a superconducting transition temperature of 1.86 K. Both the magnetoresistance and superconducting critical field in an in-plane field manifest striking twofold symmetric oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the mixed-parity superconducting state, which is an admixture of s-wave and p-wave pairing components induced by strong spin-orbit coupling inherent to inversion symmetry breaking at the heterointerface of a-YAlO₃/KTaO₃. Our work suggests an unconventional nature of the underlying pairing interaction in the KTaO₃ heterointerface superconductors, and brings a new broad of perspective on understanding non-trivial superconducting properties at the artificial heterointerfaces.

Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface

Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al₂O₃ (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO3 single-crystal substrates by solution reaction at a low temperature of ~200 oC. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm2, corresponding to the highest photoresponsivity of ~4.306×10-3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

Synthesis of Wrinkle-Free Metallic Thin Films in Polymer by Interfacial Instability Suppression with Nanoparticles

Synthesis of a smooth conductive film over an elastomer is vital to the development of flexible optics and wearable electronics, but applications are hindered by wrinkles and cracks in the film. To date, a large-scale wrinkle-free film in an elastomer has yet to be achieved. We present a robust method to fabricate wrinkle-free, stress-free, and optically smooth thin film in elastomer. Targeting underlying mechanisms, we applied nanoparticles between the film and elastomer to jam the interface and subsequently suppress interfacial instabilities to prevent the formation of wrinkles. Using polydimethylsiloxane (PDMS) and parylene-C as a model system, we have synthesized large-scale (>10 cm) wrinkle-free Al film over/in PDMS and demonstrated the principle of interface jamming by nanoparticles. We varied the jammer layer thickness to show that, as the layer exceeds a critical thickness (e.g., 150 nm), wrinkles are successfully suppressed. Nano-indentation experiments revealed that the interface becomes more elastic and less viscoelastic with respect to the jammer thickness, which further supports our assertion of the wrinkle suppression mechanism. Since the film was embedded in a polymer matrix, the resultant film was highly deformable, elastic, and optically smooth with applications for deformable optical sensors and actuators.

Ferromagnetic order controlled by the magnetic interface of LaNiO3/La2/3Ca1/3MnO3 superlattices

Interface engineering in complex oxide superlattices is a growing field, enabling manipulation of the exceptional properties of these materials, and also providing access to new phases and emergent physical phenomena. Here we demonstrate how interfacial interactions can induce a complex charge and spin structure in a bulk paramagnetic material. We investigate a superlattice (SLs) consisting of paramagnetic LaNiO₃ (LNO) and highly spin-polarized ferromagnetic La_2/3Ca_1/3MnO₃ (LCMO), grown on SrTiO₃ (001) substrate. We observed emerging magnetism in LNO through an exchange bias mechanism at the interfaces in X-ray resonant magnetic reflectivity. We find non-symmetric interface induced magnetization profiles in LNO and LCMO which we relate to a periodic complex charge and spin superstructure. High resolution scanning transmission electron microscopy images reveal that the upper and lower interfaces exhibit no significant structural variations. The different long range magnetic order emerging in LNO layers demonstrates the enormous potential of interfacial reconstruction as a tool for tailored electronic properties.

The Promise of Soft-Matter-Enabled Quantum Materials

The field of quantum materials has experienced rapid growth over the past decade, driven by exciting new discoveries with immense transformative potential. Traditional synthetic methods to quantum materials have, however, limited the exploration of architectural control beyond the atomic scale. By contrast, soft matter self-assembly can be used to tailor material structure over a large range of length scales, with a vast array of possible form factors, promising emerging quantum material properties at the mesoscale. This review explores opportunities for soft matter science to impact the synthesis of quantum materials with advanced properties. Existing work at the interface of these two fields is highlighted, and perspectives are provided on possible future directions by discussing the potential benefits and challenges which can arise from their bridging.

Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenging by conventional layer-by-layer stacking or self-assembling. Here, the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures is reported. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. This work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as providing a platform for exploring potential applications in neuromorphics, solid-state batteries, and catalysis.

Charge-transfer interface of insulating metal-organic frameworks with metallic conduction

Downsizing materials into hetero-structured thin film configurations is an important avenue to capture various interfacial phenomena. Metallic conduction at the interfaces of insulating transition metal oxides and organic molecules are notable examples, though, it remained elusive in the domain of coordination polymers including metal-organic frameworks (MOFs). MOFs are comprised of metal centers connected to organic linkers with an extended coordination geometry and potential void space. Poor orbitals overlap often makes these crystalline solids electrical insulators. Herein, we have fabricated hetero-structured thin film of a Mott and a band insulating MOFs via layer-by-layer method. Electrical transport measurements across the thin film evidenced an interfacial metallic conduction. The origin of such an unusual observation was understood by the first-principles density functional theory calculations; specifically, Bader charge analysis revealed significant accumulation and percolation of charge across the interface. We anticipate similar interfacial effects in other rationally designed hetero-structured thin films of MOFs.

Quantum electron liquid and its possible phase transition

Purely quantum electron systems exhibit intriguing correlated electronic phases by virtue of quantum fluctuations in addition to electron-electron interactions. To realize such quantum electron systems, a key ingredient is dense electrons decoupled from other degrees of freedom. Here, we report the discovery of a pure quantum electron liquid that spreads up to ~3 Å in a vacuum on the surface of an electride crystal. Its extremely high electron density and weak hybridization with buried atomic orbitals show the quantum and pure nature of the electrons, which exhibit a polarized liquid phase, as demonstrated by our spin-dependent measurement. Furthermore, upon enhancing the electron correlation strength, the dynamics of the quantum electrons change to that of a non-Fermi liquid along with an anomalous band deformation, suggestive of a transition to a hexatic liquid crystal phase. Our findings develop the frontier of quantum electron systems and serve as a platform for exploring correlated electronic phases in a pure fashion.

Defect Engineering in A2 BO4 Thin Films via Surface-Reconstructed LaSrAlO4 Substrates

Ruddlesden-Popper oxides (A₂ BO₄ ) have attracted significant attention regarding their potential application in novel electronic and energy devices. However, practical uses of A₂ BO₄ thin films have been limited by extended defects such as out-of-phase boundaries (OPBs). OPBs disrupt the layered structure of A₂ BO₄ , which restricts functionality. OPBs are ubiquitous in A₂ BO₄ thin films but inhomogeneous interfaces make them difficult to suppress. Here, OPBs in A₂ BO₄ thin films are suppressed using a novel method to control the substrate surface termination. To demonstrate the technique, epitaxial thin films of cuprate superconductor La_{2- x} Sr_x CuO₄ (x = 0.15) are grown on surface-reconstructed LaSrAlO₄ substrates, which are terminated with self-limited perovskite double layers. To date, La_{2- x} Sr_x CuO₄ thin films are grown on LaSrAlO₄ substrates with mixed-termination and exhibit multiple interfacial structures resulting in many OPBs. In contrast, La_{2- x} Sr_x CuO₄ thin films grown on surface-reconstructed LaSrAlO₄ substrates energetically favor only one interfacial structure, thus inhibiting OPB formation. OPB-suppressed La_{2- x} Sr_x CuO₄ thin films exhibit significantly enhanced superconducting properties compared with OPB-containing La_{2- x} Sr_x CuO₄ thin films. Defect engineering in A₂ BO₄ thin films will allow for the elimination of various types of defects in other complex oxides and facilitate next-generation quantum device applications.

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

Two-Dimensional Superconductivity at the Titanium Sesquioxide Heterointerface

The study of exotic superconductivity in two dimensions has been a central theme in the solid state and materials research communities. Experimentally exploring and identifying exotic, fascinating interface superconductors with a high transition temperature (T_c) are challenging. Here, we report an experimental observation of intriguing two-dimensional superconductivity with a T_c of up to 3.8 K at the interface between a Mott insulator Ti₂O₃ and polar semiconductor GaN. At the verge of superconductivity, we also observe a striking quantum metallic-like state, demonstrating that it is a precursor to the two-dimensional superconductivity as the temperature is decreased. Our work shows an exciting opportunity to exploit the underlying, emergent quantum phenomena at the heterointerfaces via heterostructure engineering.

Modulating the Energy Band Structure of the Mg-Doped Sr0.5Pr0.5Fe0.2Mg0.2Ti0.6O3-δ Electrolyte with Boosted Ionic Conductivity and Electrochemical Performance for Solid Oxide Fuel Cells

Achieving fast ionic conductivity in the electrolyte at low operating temperatures while maintaining the stable and high electrochemical performance of solid oxide fuel cells (SOFCs) is challenging. Herein, we propose a new type of electrolyte based on perovskite Sr_0.5Pr_0.5Fe_0.4Ti_0.6O_3-δ for low-temperature SOFCs. The ionic conducting behavior of the electrolyte is modulated using Mg doping, and three different Sr_0.5Pr_0.5Fe_0.4-xMg_xTi_0.6O_3-δ (x = 0, 0.1, and 0.2) samples are prepared. The synthesized Sr_0.5Pr_0.5Fe_0.2Mg_0.2Ti_0.6O_3-δ (SPFMg_0.2T) proved to be an optimal electrolyte material, exhibiting a high ionic conductivity of 0.133 S cm^-1 along with an attractive fuel cell performance of 0.83 W cm^-2 at 520 °C. We proved that a proper amount of Mg doping (20%) contributes to the creation of an adequate number of oxygen vacancies, which facilitates the fast transport of the oxide ions. Considering its rapid oxide ion transport, the prepared SPFMg_0.2T presented heterostructure characteristics in the form of an insulating core and superionic conduction via surface layers. In addition, the effect of Mg doping is intensively investigated to tune the band structure for the transport of charged species. Meanwhile, the concept of energy band alignment is employed to interpret the working principle of the proposed electrolyte. Moreover, the density functional theory is utilized to determine the perovskite structures of SrTiO_3-δ and Sr_0.5Pr_0.5Fe_0.4-xMg_xTi_0.6O_3-δ (x = 0, 0.1, and 0.2) and their electronic states. Further, the SPFMg_0.2T with 20% Mg doping exhibited low dissociation energy, which ensures the fast and high ionic conduction in the electrolyte. Inclusively, Sr_0.5Pr_0.5Fe_0.4Ti_0.6O_3-δ is a promising electrolyte for SOFCs, and its performance can be efficiently boosted via Mg doping to modulate the energy band structure.

Interface-Driven Multiferroicity in Cubic BaTiO3-SrTiO3 Nanocomposites

Perovskite multiferroics have drawn significant attention in the development of next-generation multifunctional electronic devices. However, the majority of existing multiferroics exhibit ferroelectric and ferromagnetic orderings only at low temperatures. Although interface engineering in complex oxide thin films has triggered many exotic room-temperature functionalities, the desired coupling of charge, spin, orbital and lattice degrees of freedom often imposes stringent requirements on deposition conditions, layer thickness and crystal orientation, greatly hindering their cost-effective large-scale applications. Herein, we report an interface-driven multiferroicity in low-cost and environmentally friendly bulk polycrystalline material, namely cubic BaTiO₃-SrTiO₃ nanocomposites which were fabricated through a simple, high-throughput solid-state reaction route. Interface reconstruction in the nanocomposites can be readily controlled by the processing conditions. Coexistence of room-temperature ferromagnetism and ferroelectricity, accompanying a robust magnetoelectric coupling in the nanocomposites, was confirmed both experimentally and theoretically. Our study explores the 'hidden treasure at the interface' by creating a playground in bulk perovskite oxides, enabling a broad range of applications that are challenging with thin films, such as low-power-consumption large-volume memory and magneto-optic spatial light modulator.

Freestanding complex-oxide membranes

Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.

Dimensionality-Controlled Evolution of Charge-Transfer Energy in Digital Nickelates Superlattices

Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here the dimensionality effect on the ground electronic state in high-quality (NdNiO₃ ) _m /(SrTiO₃ )₁ superlattices is systematically studied through transport and soft X-ray absorption spectroscopy. The metal-to-insulator transition temperature decreases with the thickness of the NdNiO₃ slab decreasing from bulk to 7 unit cells, then increases gradually as m further reduces to 1 unit cell. Spectral evidence demonstrates that the stabilization of insulating phase can be attributed to the increase of the charge-transfer energy between O 2p and Ni 3d bands. The prominent multiplet feature on the Ni L₃ edge develops with the decrease of NdNiO₃ slab thickness, suggesting the strengthening of the charge disproportionate state under the dimensional confinement. This work provides convincing evidence that dimensionality is an effective knob to modulate the charge-transfer energy and thus the collective ground state in nickelates.

A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes

Freestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO₃/SrTiO₃ (LAO/STO) membranes by spalling of strained heterostructures. Here, we first develop a scheme for the high-yield fabrication of membrane devices on silicon. Second, we show that the membranes exhibit metallic conductivity and a superconducting phase below ∼200 mK. Using anisotropic magnetotransport we extract the superconducting phase coherence length ξ ≈ 36-80 nm and establish an upper bound on the thickness of the superconducting electron gas d ≈ 17-33 nm, thus confirming its two-dimensional character. Finally, we show that the critical current can be modulated using a silicon-based backgate. The ability to form superconducting nanostructures of LAO/STO membranes, with electronic properties similar to those of the bulk counterpart, opens opportunities for integrating oxide nanoelectronics with silicon-based architectures.

Assessing the insulating properties of an ultrathin SrTiO3shell grown around GaAs nanowires with molecular beam epitaxy

We have studied electronic transport in undoped GaAs/SrTiO₃core-shell nanowires standing on their Si substrate with two-tip scanning tunneling microscopy in ultrahigh vacuum. The resistance profile along the nanowires is proportional to the tip separation with resistances per unit length of a few GΩ/μm. Examination of the different transport pathways parallel to the nanowire growth axis reveals that the measured resistance is consistent with a conduction along the interfacial states at the GaAs{110} sidewalls, the 2 nm thick SrTiO₃shell being as much as resistive, despite oxygen deficient growth conditions. The origin of the shell resistivity is discussed in light of the nanowire analysis with transmission electron microscopy and Raman spectroscopy, providing good grounds for the use of SrTiO₃shells as gate insulators.

Origin of the 2D Electron Gas at the SrTiO3 Surface

Bulk SrTiO₃ is a well-known band insulator and the most common substrate used in the field of complex oxide heterostructures. Its surface and interface with other oxides, however, have demonstrated a variety of remarkable behaviors distinct from those expected. In this work, using a suite of in situ techniques to monitor both the atomic and electronic structures of the SrTiO₃ (001) surface prior to and during growth, the disappearance and re-appearance of a 2D electron gas (2DEG) is observed after the completion of each SrO and TiO₂ monolayer, respectively. The 2DEG is identified with the TiO₂ double layer present at the initial SrTiO₃ surface, which gives rise to a surface potential and mobile electrons due to vacancies within the TiO_2-x adlayer. Much like the electronic reconstruction discovered in other systems, two atomic planes are required, here supplied by the double layer. The combined in situ scattering/spectroscopy findings resolve a number of longstanding issues associated with complex oxide interfaces, facilitating the employment of atomic-scale defect engineering in oxide electronics.

Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures

Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO₃/SrTiO₃ (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications.

Twisted oxide lateral homostructures with conjunction tunability

Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films.

It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability.

Two-Dimensional Material-Based Electrochemical Sensors/Biosensors for Food Safety and Biomolecular Detection

Two-dimensional materials (2DMs) exhibited great potential for applications in materials science, energy storage, environmental science, biomedicine, sensors/biosensors, and others due to their unique physical, chemical, and biological properties. In this review, we present recent advances in the fabrication of 2DM-based electrochemical sensors and biosensors for applications in food safety and biomolecular detection that are related to human health. For this aim, firstly, we introduced the bottom-up and top-down synthesis methods of various 2DMs, such as graphene, transition metal oxides, transition metal dichalcogenides, MXenes, and several other graphene-like materials, and then we demonstrated the structure and surface chemistry of these 2DMs, which play a crucial role in the functionalization of 2DMs and subsequent composition with other nanoscale building blocks such as nanoparticles, biomolecules, and polymers. Then, the 2DM-based electrochemical sensors/biosensors for the detection of nitrite, heavy metal ions, antibiotics, and pesticides in foods and drinks are introduced. Meanwhile, the 2DM-based sensors for the determination and monitoring of key small molecules that are related to diseases and human health are presented and commented on. We believe that this review will be helpful for promoting 2DMs to construct novel electronic sensors and nanodevices for food safety and health monitoring.

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface-mediated growth process for the controlled synthesis of high-quality monolayer hBN is proposed and further demonstrated. It is discovered that the in-plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single-domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep-ultraviolet emission at 6.12 eV stems from the 1s-exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer-scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

2D Materials for All-Solid-State Lithium Batteries

Although one of the most mature battery technologies, lithium-ion batteries still have many aspects that have not reached the desired requirements, such as energy density, current density, safety, environmental compatibility, and price. To solve these problems, all-solid-state lithium batteries (ASSLB) based on lithium metal anodes with high energy density and safety have been proposed and become a research hotpot in recent years. Due to the advanced electrochemical properties of 2D materials (2DM), they have been applied to mitigate some of the current problems of ASSLBs, such as high interface impedance and low electrolyte ionic conductivity. In this work, the background and fabrication method of 2DMs are reviewed initially. The improvement strategies of 2DMs are categorized based on their application in the three main components of ASSLBs: The anode, cathode, and electrolyte. Finally, to elucidate the mechanisms of 2DMs in ASSLBs, the role of in situ characterization, synchrotron X-ray techniques, and other advanced characterization are discussed.

Combinatorial synthesis of heteroepitaxial, multi-cation, thin-films via pulsed laser deposition coupled with in-situ, chemical and structural characterization

Combinatorial synthesis via a continuous composition spread is an excellent route to develop thin-film libraries as it is both time- and cost-efficient. Creating libraries of functional, multicomponent, complex oxide films requires excellent control over the synthesis parameters combined with high-throughput analytical feedback. A reliable, high-throughput, in-situ characterization analysis method is required to meet the crucial need to rapidly screen materials libraries. Here, we report on the combination of two in-situ techniques—(a) Reflection high-energy electron diffraction (RHEED) for heteroepitaxial characterization and a newly developed compositional analysis technique, low-angle x-ray spectroscopy (LAXS), to map the chemical composition profile of combinatorial heteroepitaxial complex oxide films deposited using a continuous composition spread method via pulsed laser deposition. This is accomplished using a unique state-of-the-art combinatorial growth system with a fully synchronized four-axis mechanical substrate stage without shadow masks, alternating acquisition of chemical compositional data using LAXS at various different positions on the $$\sim$$ ∼ 41 mm $$\times$$ × 41 mm range and sequential deposition of multilayers of SrTiO$$_3$$ 3 and $$\hbox {SrTi}_{0.8}\hbox {Ru}_{0.2}\hbox {O}_3$$ SrTi 0.8 Ru 0.2 O 3 on a 2-inch (50.8 mm) $$\hbox {LaAlO}_3$$ LaAlO 3 wafer in a single growth run. Rutherford backscattering spectrometry (RBS) is used to calibrate and validate the compositions determined by LAXS. This study shows the feasibility of combinatorial synthesis of heteroepitaxial, functional complex oxide films at wafer-scale via two essential in-situ characterization tools—RHEED for structural analysis or heteroepitaxy and LAXS for compositional characterization. This is a powerful technique for development of new films with optimized heteroepitaxy and composition.

Room-Temperature Ferromagnetism at an Oxide-Nitride Interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of the Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via heteroanions has not been explored and the associated quantum states are unknown. Here, we report the successful epitaxial synthesis and characterization of chromium oxide (Cr_{2}O_{3})-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr^{3+} ions via anion-hybridization across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

Reconfiguration of Amorphous Complex Oxides: A Route to a Broad Range of Assembly Phenomena, Hybrid Materials, and Novel Functionalities

Reconfiguration of amorphous complex oxides provides a readily controllable source of stress that can be leveraged in nanoscale assembly to access a broad range of 3D geometries and hybrid materials. An amorphous SrTiO₃ layer on a Si:B/Si_{1- x} Ge_x :B heterostructure is reconfigured at the atomic scale upon heating, exhibiting a change in volume of ≈2% and accompanying biaxial stress. The Si:B/Si_{1- x} Ge_x :B bilayer is fabricated by molecular beam epitaxy, followed by sputter deposition of SrTiO₃ at room temperature. The processes yield a hybrid oxide/semiconductor nanomembrane. Upon release from the substrate, the nanomembrane rolls up and has a curvature determined by the stress in the epitaxially grown Si:B/Si_{1- x} Ge_x :B heterostructure. Heating to 600 °C leads to a decrease of the radius of curvature consistent with the development of a large compressive biaxial stress during the reconfiguration of SrTiO₃ . The control of stresses via post-deposition processing provides a new route to the assembly of complex-oxide-based heterostructures in 3D geometry. The reconfiguration of metastable mechanical stressors enables i) synthesis of various types of strained superlattice structures that cannot be fabricated by direct growth and ii) technologies based on strain engineering of complex oxides via highly scalable lithographic processes and on large-area semiconductor substrates.

Surface and interface effects in oxygen-deficient SrMnO3 thin films grown on SrTiO3

Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental understanding of their stability and electronic structure has so far mostly been established in the bulk or strained bulk, neglecting interfaces and surfaces present in a thin-film geometry. We investigate here, via density functional theory calculations, oxygen vacancies in the model system of a SrMnO₃ (SMO) thin film grown on a SrTiO₃ (STO) (001) substrate. Structural and electronic differences compared to bulk SMO result mainly from undercoordination at the film surface. The changed crystal field leads to a depletion of subsurface valence-band states and transfer of this charge to surface Mn atoms, both of which strongly affect the defect chemistry in the film. The result is a strong preference of oxygen vacancies in the surface region compared to deeper layers. Finally, for metastable oxygen vacancies in the substrate, we predict a spatial separation of the defect from its excess charge, the latter being accommodated in the film but close to the substrate boundary. These results show that surface and interface effects lead to significant differences in stability and electronic structure of oxygen vacancies in thin-film geometries compared to the (strained) bulk.

The oxygen vacancy formation energy in an SrMnO₃ thin film grown on a SrTiO₃ substrate is affected by crystal-field effects at the very surface and the induced electrostatic potential.

Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO₃ (SVO) sandwich a barrier layer of the band insulator SrTiO₃. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.

Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling

We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.

Infinite-layer/perovskite oxide heterostructure-induced high-spin states in SrCuO2/SrRuO3 bilayer films

Heterostructures composed of dissimilar oxides with different properties offer opportunities to develop emergent devices with desired functionalities. A key feature of oxide heterostructures is interface electronics and orbital reconstructions. Here, we combined infinite-layered SrCuO₂ and perovskite SrRuO₃ into heterostructures. A rare high spin state as large as 3.0 μ_B f.u^-1 and an increase in Curie temperature by 12 K are achieved in an ultrathin SrRuO₃ film capped by a SrCuO₂ layer. Atomic-scale lattice imaging shows the uniform CuO₂-plane-to-RuO₅-pyramid connection at the interface, where the regularly arranged RuO₅ pyramids were elongated along the out-of-plane direction. As revealed by theoretical calculations and spectral analysis, these features finally result in an abnormally high spin state of the interfacial Ru ions with highly polarized e_g orbitals. The present work demonstrates that oxygen coordination engineering at the infinite-layer/perovskite oxide interface is a promising approach towards advanced oxide electronics.

Functional Nanoscale Phase Separation and Intertwined Order in Quantum Complex Materials

Nanoscale phase separation (NPS), characterized by particular types of correlated disorders, plays an important role in the functionality of high-temperature superconductors (HTS). Our results show that multiscale heterogeneity is an essential ingredient of quantum functionality in complex materials. Here, the interactions developing between different structural units cause dynamical spatiotemporal conformations with correlated disorder; thus, visualizing conformational landscapes is fundamental for understanding the physical properties of complex matter and requires advanced methodologies based on high-precision X-ray measurements. We discuss the connections between the dynamical correlated disorder at nanoscale and the functionality in oxygen-doped perovskite superconducting materials.

Writing of strain-controlled multiferroic ribbons into MnWO4

Local and low-dimensional structures, such as interfaces, domain walls and structural defects, may exhibit physical properties different from the bulk. Therein, a wide variety of local phases were discovered including conductive interfaces, sheet superconductivity, and magnetoelectric domain walls. The confinement of combined magnetic and electric orders to spatially selected regions may be particularly relevant for future technological applications because it may serve as basis of electrically controllable magnetic memory devices. However, direct observation of magnetoelectric low-dimensional structures cannot readily be done partly because of the lack of experimental techniques locally probing their physical nature. Here, we report an observation of multiferroic ribbon-like domains in a non-multiferroic environment in MnWO₄. Using optical second harmonic generation imaging, we reveal that a multiferroic phase is stabilized by locally generated strain while the bulk magnetic structure is non-multiferroic. We further find that the confined multiferroic state retains domains with different directions of electric polarization and we demonstrate deterministic writing of a multiferroic state embedded in a non-multiferroic environment.

Emerging perovskite monolayers

The library of two-dimensional (2D) materials has been enriched over recent years with novel crystal architectures endowed with diverse exciting functionalities. Bulk perovskites, including metal-halide and oxide systems, provide access to a myriad of properties through molecular engineering. Their tunable electronic structure offers remarkable features from long carrier-diffusion lengths and high absorption coefficients in metal-halide perovskites to high-temperature superconductivity, magnetoresistance and ferroelectricity in oxide perovskites. Emboldened by the 2D materials research, perovskites down to the monolayer limit have recently emerged. Like other 2D species, perovskites with reduced dimensionality are expected to exhibit new physics and to herald next-generation multifunctional devices. In this Review, we critically assess the preliminary studies on the synthetic routes and inherent properties of monolayer perovskite materials. We also discuss how to exploit them for widespread applications and provide an outlook on the challenges and opportunities that lie ahead for this enticing class of 2D materials.

Proximity-Induced Novel Ferromagnetism Accompanied with Resolute Metallicity in NdNiO3 Heterostructure

Employing X-ray magnetic circular dichroism (XMCD), angle-resolved photoemission spectroscopy (ARPES), and momentum-resolved density fluctuation (MRDF) theory, the magnetic and electronic properties of ultrathin NdNiO₃ (NNO) film in proximity to ferromagnetic (FM) La_0.67 Sr_0.33 MnO₃ (LSMO) layer are investigated. The experimental data shows the direct magnetic coupling between the nickelate film and the manganite layer which causes an unusual ferromagnetic (FM) phase in NNO. Moreover, it is shown the metal-insulator transition in the NNO layer, identified by an abrupt suppression of ARPES spectral weight near the Fermi level (E_F ), is absent. This observation suggests that the insulating AFM ground state is quenched in proximity to the FM layer. Combining the experimental data (XMCD and AREPS) with the momentum-resolved density fluctuation calculation (MRDF) reveals a direct link between the MIT and the magnetic orders in NNO systems. This work demonstrates that the proximity layer order can be broadly used to modify physical properties and enrich the phase diagram of RENiO₃ (RE = rare-earth element).

Determination of the embedded electronic states at nanoscale interface via surface-sensitive photoemission spectroscopy

The fabrication of small-scale electronics usually involves the integration of different functional materials. The electronic states at the nanoscale interface plays an important role in the device performance and the exotic interface physics. Photoemission spectroscopy is a powerful technique to probe electronic structures of valence band. However, this is a surface-sensitive technique that is usually considered not suitable for the probing of buried interface states, due to the limitation of electron-mean-free path. This article reviews several approaches that have been used to extend the surface-sensitive techniques to investigate the buried interface states, which include hard X-ray photoemission spectroscopy, resonant soft X-ray angle-resolved photoemission spectroscopy and thickness-dependent photoemission spectroscopy. Especially, a quantitative modeling method is introduced to extract the buried interface states based on the film thickness-dependent photoemission spectra obtained from an integrated experimental system equipped with in-situ growth and photoemission techniques. This quantitative modeling method shall be helpful to further understand the interfacial electronic states between functional materials and determine the interface layers.