Electrochromic nanocrystal quantum dots

Solution-processed colloidal quantum dots for internet of things

Colloidal quantum dots (CQDs) have been a hot research topic ever since they were successfully fabricated in 1993 via the hot injection method. The Nobel Prize in Chemistry 2023 was awarded to Moungi G. Bawendi, Louis E. Brus and Alexei I. Ekimov for the discovery and synthesis of quantum dots. The Internet of Things (IoT) has also attracted a lot of attention due to the technological advancements and digitalisation of the world. This review first aims to give the basics behind QD physics. After that, the history behind CQD synthesis and the different methods used to synthesize most widely researched CQD materials (CdSe, PbS and InP) are revisited. A brief introduction to what IoT is and how it works is also mentioned. Then, the most widely researched CQD devices that can be used for the main IoT components are reviewed, where the history, physics, the figures of merit (FoMs) and the state-of-the-art are discussed. Finally, the challenges and different methods for integrating CQDs into IoT devices are discussed, mentioning the future possibilities that await CQDs.

Reversible Ligand Detachment from CdSe Quantum Dots Following Photoexcitation

The nanocrystal-ligand boundaries of colloidal quantum dots (QDs) mediate charge and energy transfer processes that underpin photochemical and photocatalytic transformations at their surfaces. We used time-resolved infrared spectroscopy combined with transient electronic spectroscopy to probe vibrational modes of the carboxylate anchoring groups of stearate ligands attached to cadmium selenide (CdSe) QDs that were optically excited in solid nanocrystal films. The vibrational frequencies of surface-bonded carboxylate groups revealed their interactions with surface-localized holes in the excited states of the QDs. We also observed transient and reversible photoinduced ligand detachment from CdSe nanocrystals within their excited state lifetime. By probing both surface charge distributions and ligand dynamics on QDs in their excited states, we open a pathway to explore how the nanocrystal-ligand boundary can be understood and controlled for the design of QD architectures that most effectively drive charge transfer processes in solar energy harvesting and photoredox catalysis applications.

Spectral widths and Stokes shifts in InP-based quantum dots

InP-based quantum dots (QDs) have Stokes shifts and photoluminescence (PL) line widths that are larger than in II-VI semiconductor QDs with comparable exciton energies. The mechanisms responsible for these spectral characteristics are investigated in this paper. Upon comparing different semiconductors, we find the Stokes shift decreases in the following order: InP > CdTe > CdSe. We also find that the Stokes shift decreases with core size and decreases upon deposition of a ZnSe shell. We suggest that the Stokes shift is largely due to different absorption and luminescent states in the angular momentum fine structure. The energy difference between the fine structure levels, and hence the Stokes shifts, are controlled by the electron-hole exchange interaction. Luminescence polarization results are reported and are consistent with this assignment. Spectral widths are controlled by the extent of homogeneous and inhomogeneous broadening. We report PL and PL excitation (PLE) spectra that facilitate assessing the roles of homogeneous and different inhomogeneous broadening mechanisms in the spectra of zinc-treated InP and InP/ZnSe/ZnS particles. There are two distinct types of inhomogeneous broadening: size inhomogeneity and core-shell interface inhomogeneity. The latter results in a distribution of core-shell band offsets and is caused by interfacial dipoles associated with In-Se or P-Zn bonding. Quantitative modeling of the spectra shows that the offset inhomogeneity is comparable to but somewhat smaller than the size inhomogeneity. The combination of these two types of inhomogeneity also explains several aspects of reversible hole trapping dynamics involving localized In3+/VZn2- impurity states in the ZnSe shells.

Multicolored inorganic electrochromic materials: status, challenge, and prospects

Against the backdrop of advocacy for green and low-carbon development, electrochromism has attracted academic and industrial attention as an intelligent and energy-saving applied technology due to its optical switching behavior and its special principles of operation. Inorganic electrochromic materials, represented by transition metal oxides, are considered candidates for the next generation of large-scale electrochromic applied technologies due to their excellent stability. However, the limited color diversity and low color purity of these materials greatly restrict their development. Starting from the multicolor properties of inorganic electrochromic materials, this review systematically elaborates on recent progress in the aspects of the intrinsic multicolor of electrochromic materials, and structural multicolor based on the interaction between light and microstructure. Finally, the challenges and opportunities of inorganic electrochromic technology in the field of multicolor are discussed.

A novel electrochemical aptasensor based on eco-friendly synthesized titanium dioxide nanosheets and polyethyleneimine grafted reduced graphene oxide for ultrasensitive and selective detection of ciprofloxacin

Developing a rapid, sensitive, and efficient analytical method for the trace-level determination of highly concerning antibiotic ciprofloxacin (CIP) is desirable to guarantee the safety of human health and ecosystems. In this work, a novel electrochemical aptasensor based on polyethyleneimine grafted reduced graphene oxide and titanium dioxide (rGO/PEI/TiO2) nanocomposite was constructed for ultrasensitive and selective detection of CIP. Through the in-situ electrochemical oxidation of Ti3C2Tx nanosheets, TiO2 nanosheets with good electrochemical response were prepared in a more convenient and eco-friendly method. The prepared TiO2 nanosheets promote charge transferring on electrode interface, and [Fe(CN)6]3-/4- as electrochemical active substance can be electrostatically attracted by rGO/PEI. Thus, electrochemical detection signal of the aptasensor variates a lot after specific binding with CIP, achieving working dynamic range of 0.003-10.0 μmol L-1, low detection limit down to 0.7 nmol L-1 (S/N = 3) and selectivity towards other antibiotics. Additionally, the aptasensor exhibited good agreement with HPLC method at 95% confidence level, and achieved good recoveries (96.8-106.3%) in real water samples, demonstrating its suitable applicability of trace detection of CIP in aquatic environment.

Characterizing the Semiconductor Nanocrystal Surface through Chemical Reactivity

ConspectusMany desirable and undesirable properties of semiconductor nanocrystals (NCs) can be traced to the NC surface due to the large surface-to-volume ratio. Therefore, precise control of the NC surface is imperative to achieve NCs with the desired qualities. Ligand-specific reactivity and surface heterogeneity make it difficult to accurately control and tune the NC surface. Without a molecular-level appreciation of the NC surface chemistry, modulating the NC surface is impossible and the risk of introducing deleterious surface defects is imminent. To gain a more comprehensive understanding of the surface reactivity, we have utilized a variety of spectroscopic techniques and analytical methods in concert.This Account describes our use of robust characterization techniques and ligand exchange reactions in effort to establish a molecular-level understanding of NC surface reactivity. The utility of NCs in target applications such as catalysis and charge transfer hangs on precise tunability of NC ligands. Modulating the NC surface requires the necessary tools to monitor chemical reactions. One commonly utilized analytical method to achieve targeted surface compositions is ¹H nuclear magnetic resonance (NMR) spectroscopy. Here we describe our use of ¹H NMR spectroscopy to monitor chemical reactions at CdSe and PbS NC surfaces to identify ligand specific reactivity. However, seemingly straightforward ligand exchange reactions can vary widely depending on the NC materials and anchoring group. Some non-native X-type ligands will irreversibly displace native ligands. Other ligands exist in equilibrium with native ligands. Depending on the application, it is important to understand the nature of exchange reactions. This level of understanding can be obtained by extracting exchange ratios, exchange equilibrium, and reaction mechanism information from ¹H NMR spectroscopy to establish precise NC reactivity.Reactivity that occurs through multiple, parallel ligand exchange mechanisms can involve both the liberation of metal-based Z-type ligands in addition to reactivity of X-type ligands. In these reactions, ¹H NMR spectroscopy fails to discern between an X-type oleate or a Z-type Pb(oleate)₂ because only the alkene resonance of the organic constituent is probed by this method. Multiple, parallel reaction pathways occur when thiol ligands are introduced to oleate-capped PbS NCs. This necessitated the use of synergistic characterization methods including ¹H NMR spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, and inductively coupled plasma mass spectrometry (ICP-MS) to characterize both surface-bound and liberated ligands.Similar analytical methods have been employed to probe the NC topology, which is an important, but often overlooked, component to NC reactivity given the facet-specific reactivity of PbS NCs. Through the tandem use of NMR spectroscopy and ICP-MS, we have monitored the liberation of Pb(oleate)₂ as an L-type ligand is titrated to the NC to determine the quantity and equilibrium of Z-type ligands. By studying a variety of NC sizes, we correlated the number of liberated ligands with the size-dependent topology of PbS NCs.Lastly, we incorporate redox-active chemical probes into our toolbox to study NC surface defects. We describe how the site-specific reactivity and relative energetics of redox-active surface-based defects are elucidated using redox probes and show that this reactivity is highly dependent on the surface composition. This Account is designed to encourage readers to consider the necessary characterization techniques needed establish a molecular-level understanding of NC surfaces in their own work.

Colloidal Quantum Dots in Very-Long-Wave Infrared Detection: Progress, Challenges, and Opportunities

The very long wave infrared (VLWIR) is an electromagnetic wave with a wavelength range of 15-30 μm, which plays an important role in missile defense and weather monitoring. This paper briefly introduces the development of intraband absorption of colloidal quantum dots (CQDs) and investigates the possibility of using CQDs to produce VLWIR detectors. We calculated the detectivity of CQDs for VLWIR. The results show that the detectivity is affected by parameters such as quantum dot size, temperature, electron relaxation time, and distance between quantum dots. The theoretical derivation results, combined with the current development status, show that the detection of VLWIR by CQDs is still in the theoretical stage.

Electrochemical Control over the Optical Properties of II-VI Colloidal Nanoplatelets by Tailoring the Station of Extra Charge Carriers

An electrochemical (EC) method has been successfully applied to regulate the optical properties of nanocrystals, such as reducing their gain threshold by EC doping and enhancing their photoluminescence intensity by EC filling of trap states. However, the processes of EC doping and filling are rarely reported simultaneously in a single study, hindering the understanding of their underlying interactions. Here, we report the spectroelectrochemical (SEC) studies of quasi-two-dimensional nanoplatelets (NPLs), intending to clarify the above issues. EC doping is successfully achieved in CdSe/CdZnS core/shell NPLs, with red-shifted photoluminescence and a reversal of the emission intensity trend. The injection of extra electrons (holes) into the conduction (valence) band edges needs high bias voltages, while the passivation/activation process of trap states with the shift of Fermi level starts at lower EC potentials. Then, we explore the role of excitation light conditions in these processes, different from existing SEC research studies. Interestingly, increasing the laser power density can hinder EC electron injection, whereas decreasing the excitation energy evades the passivation process of trap states. Moreover, we demonstrate that EC control strategies can be used to realize color display and anti-counterfeiting applications via simultaneously tailoring the photoluminescence intensity of red- and green-emitting NPLs.

Spectroelectrochemistry of CdSe/CdxZn1-xS Nanoplatelets

We report an unexpected enhancement of photoluminescence (PL) in CdSe-based core/shell nanoplatelets (NPLs) upon electrochemical hole injection. Moderate hole doping densities induce an enhancement of more than 50% in PL intensity. This is accompanied by a narrowing and blue-shift of the PL spectrum. Simultaneous, time-resolved PL experiments reveal a slower luminescence decay. Such hole-induced PL brightening in NPLs is in stark contrast to the usual observation of PL quenching of CdSe-based quantum dots following hole injection. We propose that hole injection removes surface traps responsible for the formation of negative trions, thereby blocking nonradiative Auger processes. Continuous photoexcitation causes the enhanced PL intensity to decrease back to its initial level, indicating that photocharging is a key step leading to loss of PL luminescence during normal aging. Modulating the potential can be used to reversibly enhance or quench the PL, which enables electro-optical switching.

Ultra-high resolution particle size measurement based on scattering spectrum analysis-simulation and experiment

This paper focuses on the properties of light scattering spectra from a spherical particle and their application for particle size measurement. The influence of particle size and scattering angle on the scattering spectra are investigated and simulated. An ultra-resolution particle dimension measurement method was proposed based on detecting the peak of scattering spectra. An accurate spectral peak location strategy based on the spectral shape features is adopted to reduce the spectra peak positioning error caused by dispersion. The size of smaller particle is measured by locating a wide scattering spectral peak at a larger scattering angle to achieve higher measurement sensitivity, while the size of larger particle is measured by locating a narrow scattering spectral peak at a smaller angle to achieve a larger measurement range. If the spectral resolution of the spectrometer is 0.8 nm, the particle size resolution of 1.1 nm and 8.3 nm are achieved for measured particles with sizes ranging from 0.25µm to 1µm and measured particles with sizes ranging from 1µm to 10µm, respectively. And if the spectrometer with picometer resolution is used, the particle size resolution is expected to be on the order of picometers.

CdS Quantum Dots as Potent Photoreductants for Organic Chemistry Enabled by Auger Processes

Strong reducing agents (<-2.0 V vs saturated calomel electrode (SCE)) enable a wide array of useful organic chemistry, but suffer from a variety of limitations. Stoichiometric metallic reductants such as alkali metals and SmI₂ are commonly employed for these reactions; however, considerations including expense, ease of use, safety, and waste generation limit the practicality of these methods. Recent approaches utilizing energy from multiple photons or electron-primed photoredox catalysis have accessed reduction potentials equivalent to Li⁰ and shown how this enables selective transformations of aryl chlorides via aryl radicals. However, in some cases, low stability of catalytic intermediates can limit turnover numbers. Herein, we report the ability of CdS nanocrystal quantum dots (QDs) to function as strong photoreductants and present evidence that a highly reducing electron is generated from two consecutive photoexcitations of CdS QDs with intermediate reductive quenching. Mechanistic experiments suggest that Auger recombination, a photophysical phenomenon known to occur in photoexcited anionic QDs, generates transient thermally excited electrons to enable the observed reductions. Using blue light-emitting diodes (LEDs) and sacrificial amine reductants, aryl chlorides and phosphate esters with reduction potentials up to -3.4 V vs SCE are photoreductively cleaved to afford hydrodefunctionalized or functionalized products. In contrast to small-molecule catalysts, QDs are stable under these conditions and turnover numbers up to 47 500 have been achieved. These conditions can also effect other challenging reductions, such as tosylate protecting group removal from amines, debenzylation of benzyl-protected alcohols, and reductive ring opening of cyclopropane carboxylic acid derivatives.

Doping Colloidal Quantum Dot Materials and Devices for Photovoltaics

Colloidal semiconductor nanocrystals have generated tremendous interest because of their solution processability and robust tunability. Among such nanocrystals, the colloidal quantum dot (CQD) draws the most attention for its well-known quantum size effects. In the last decade, applications of CQDs have been booming in electronics and optoelectronics, especially in photovoltaics. Electronically doped semiconductors are critical in the fabrication of solar cells, because carefully designed band structures are able to promote efficient charge extraction. Unlike conventional semiconductors, diffusion and ion implantation technologies are not suitable for doping CQDs. Therefore, researchers have creatively developed alternative doping methods for CQD materials and devices. In order to provide a state-of-the-art summary and comprehensive understanding to this research community, we focused on various doping techniques and their applications for photovoltaics and demystify them from different perspectives. By analyzing two classes of CQDs, lead chalcogenide CQDs and perovskite CQDs, we compared different working scenarios of each technique, summarized the development in this field, and raised our own future perspectives.

Terahertz Field-Induced Reemergence of Quenched Photoluminescence in Quantum Dots

The continuous and concerted development of colloidal quantum dot light-emitting diodes over the past two decades has established them as a bedrock technology for the next generation of displays. However, a fundamental issue that limits the performance of these devices is the quenching of photoluminescence due to excess charges from conductive charge transport layers. Although device designs have leveraged various workarounds, doing so often comes at the cost of limiting efficient charge injection. Here we demonstrate that high-field terahertz (THz) pulses can dramatically brighten quenched QDs on metallic surfaces, an effect that persists for minutes after THz irradiation. This phenomenon is attributed to the ability of the THz field to remove excess charges, thereby reducing trion and nonradiative Auger recombination. Our findings show that THz technologies can be used to suppress and control such undesired nonradiative decay, potentially in a variety of luminescent materials for future device applications.

Intraband Transition and Localized Surface Plasmon Resonance of Metal Chalcogenides Nanocrystals and their Dependence on Crystal Structure

Understanding the localized surface plasmon resonance (LSPR) and the intraband transition of semiconductor nanocrystals (NCs) has attracted considerable attention since it can provide the opportunity to investigate the boundary between...

Efficient Tandem Quantum-Dot LEDs Enabled by An Inorganic Semiconductor-Metal-Dielectric Interconnecting Layer Stack

Light-emitting diodes (LEDs) in a tandem configuration offer a strategy to realize high-performance, multicolor devices. Until now, though, the efficiency of tandem colloidal quantum dot LEDs (QLEDs) has been limited due to unpassivated interfaces and solvent damage originating from the materials processing requirements of interconnecting layers (ICLs). Here an ICL is reported consisting of a semiconductor-metal-dielectric stack that provides facile fabrication, materials stability, and good optoelectronic coupling. It is investigated experimentally how the ICL enables charge balance, suppresses current leakage, and prevents solvent damage to the underlying layers. As a result record efficiencies are reported for double-junction tandem QLEDs, whose emission wavelengths cover from blue to red light; i.e., external quantum efficiencies (EQEs) of 40% (average 37+/-2%) for red, 49% (average 45+/-2%) for yellow, 50% (average 46+/-2%) for green, and 24% (average 21+/-2%) for blue are achieved.

Coreactant-Free and Direct Electrochemiluminescence from Dual-Stabilizer-Capped InP/ZnS Nanocrystals: A New Route Involving n-Type Luminophore

Electrochemiluminescence (ECL) is conventionally generated in either an annihilation or a coreactant route, and the overwhelming majority of ECL research is conducted in the coreactant route via oxidizing or reducing the coexisting coreactant and luminophore. The coreacant-free ECL generated via merely oxidizing the luminophore would break through the ceiling of coreactant ECL via excluding the detrimental effects of exogenous coreactant and dissolved oxygen. Herein, by exploiting the rich-electron nature of n-type nanocrystals (NCs), coreacant-free ECL is achieved via merely oxidizing 3-mercaptopropionic acid (MPA) and mercaptosuccinic acid (MSA) capped InP/ZnS NCs, i.e., InP/ZnS_MPA-MSA. The electron-rich InP/ZnS_MPA-MSA can be electrochemically injected with holes via two oxidative processes at around +0.75 and +1.37 V (vs Ag/AgCl), respectively, and the exogenous hole can directly combine the conduction band (CB) electron of InP/ZnS_MPA-MSA, resulting in two coreactant-free ECL processes without employing any exogenous coreactant. The deprotonation process for the carboxyl group of the capping agents can provide a negatively charged surface to InP/ZnS_MPA-MSA and enhance the coreactant-free ECL. The hole-injecting process at +1.37 is much stronger than that at +0.75 V and eventually enables an ∼2000-fold enhanced ECL at +1.37 V than that at +0.75 V. The ECL at +1.37 V can be utilized for coreactant-free ECL immunoassay with prostate-specific antigen (PSA) as analyte, which exhibits an acceptable linear response from 5 pg·mL^-1 to 1 ng·mL^-1 with a limit of detection of 0.3 pg·mL^-1. The coreactant-free ECL route would provide an alternative to both annihilation and coreactant routes, simplify the ECL assay procedure and deepening the ECL mechanism investigations.

Tunable Redox Potential Photocatalyst: Aggregates of 2,3-Dicyanopyrazino Phenanthrene Derivatives for the Visible-Light-Induced α-Allylation of Amines

This work highlights the tunable redox potential of 6,11-dibromo-2,3-dicyanopyrazinophenanthrene (DCPP3) aggregates, which can be formed through physical π-π stacking interactions with other DCPP3 monomers. Electrochemical and scanning electron microscopy showed that the reduction potential of [DCPP3]_n aggregates could be increased by decreasing their size. The size of [DCPP3]_n aggregates could be regulated by controlling the concentration of DCPP3 in an organic solvent. As such, a fundamental understanding of this tunable redox potential is essential for developing new materials for photocatalytic applications. The [DCPP3]_n aggregates as a visible-light photocatalyst in combination with Pd catalysts in the visible-light-induced α-allylation of amines were used. This [DCPP3]_n photocatalyst exhibits excellent photo- and electrochemical properties, including a remarkable visible-light absorption, long excited-state lifetime (16.6 μs), good triplet quantum yield (0.538), and high reduction potential (E_red([DCPP3]_n/[DCPP3]_n^-) > -1.8 V vs SCE).

Tunable Band-Edge Potentials and Charge Storage in Colloidal Tin-Doped Indium Oxide (ITO) Nanocrystals

Degenerately doped metal-oxide nanocrystals (NCs) show localized surface plasmon resonances (LSPRs) that are tunable via their tunable excess charge-carrier densities. Modulation of excess charge carriers has also been used to control magnetism in colloidal doped metal-oxide NCs. The addition of excess delocalized conduction-band (CB) electrons can be achieved through aliovalent doping or by postsynthetic techniques such as electrochemistry or photodoping. Here, we examine the influence of charge-compensating aliovalent dopants on the potentials of excess CB electrons in free-standing colloidal degenerately doped oxide NCs, both experimentally and through modeling. Taking Sn⁴⁺:In₂O₃ (ITO) NCs as a model system, we use spectroelectrochemical techniques to examine differences between aliovalent doping and photodoping. We demonstrate that whereas photodoping introduces excess CB electrons by raising the Fermi level relative to the CB edge, aliovalent impurity substitution introduces excess CB electrons by stabilizing the CB edge relative to an externally defined Fermi level. Significant differences are thus observed electrochemically between spectroscopically similar delocalized CB electrons compensated by aliovalent dopants and those compensated by surface cations (e.g., protons) during photodoping. Theoretical modeling illustrates the very different potentials that arise from charge compensation via aliovalent substitution and surface charge compensation. Spectroelectrochemical titrations allow the ITO NC band-edge stabilization as a function of Sn⁴⁺ doping to be quantified. Extremely large capacitances are observed in both In₂O₃ and ITO NCs, making these NCs attractive for reversible charge-storage applications.

Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity

Nanocrystals (NCs) have gained considerable attention for their broadly tunable absorption from the UV to the THz range. Nevertheless, their optical features suffer from a lack of tunability once integrated into optoelectronic devices. Here, we show that bias tunable aspectral response is obtained by coupling a HgTe NC array with a plasmonic resonator. Up to 15 meV blueshift can be achieved from a 3 μm absorbing wavelength structure under a 3 V bias voltage when the NC exciton is coupled with a mode of the resonator. We demonstrate that the blueshift arises from the interplay between hopping transport and inhomogeneous absorption due to the presence of the photonic structure. The observed tunable spectral response is qualitatively reproduced in simulation by introducing a bias-dependent diffusion length in the charge transport. This work expands the realm of existing NC-based devices and paves the way toward light modulators.

Flexible and high-performance electrochromic devices enabled by self-assembled 2D TiO2/MXene heterostructures

Transition metal oxides (TMOs) are promising electrochromic (EC) materials for applications such as smart windows and displays, yet the challenge still exists to achieve good flexibility, high coloration efficiency and fast response simultaneously. MXenes (e.g. Ti3C2Tx) and their derived TMOs (e.g. 2D TiO2) are good candidates for high-performance and flexible EC devices because of their 2D nature and the possibility of assembling them into loosely networked structures. Here we demonstrate flexible, fast, and high-coloration-efficiency EC devices based on self-assembled 2D TiO2/Ti3C2Tx heterostructures, with the Ti3C2Tx layer as the transparent electrode, and the 2D TiO2 layer as the EC layer. Benefiting from the well-balanced porosity and connectivity of these assembled nanometer-thick heterostructures, they present fast and efficient ion and electron transport, as well as superior mechanical and electrochemical stability. We further demonstrate large-area flexible devices which could potentially be integrated onto curved and flexible surfaces for future ubiquitous electronics.

Quantitative Electrochemical Control over Optical Gain in Quantum-Dot Solids

Solution-processed quantum dot (QD) lasers are one of the holy grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs >1 exciton per QD, which is difficult to achieve because of fast nonradiative Auger recombination. The threshold can, however, be reduced by electronic doping of the QDs, which decreases the absorption near the band-edge, such that the stimulated emission (SE) can easily outcompete absorption. Here, we show that by electrochemically doping films of CdSe/CdS/ZnS QDs, we achieve quantitative control over the gain threshold. We obtain stable and reversible doping of more than two electrons per QD. We quantify the gain threshold and the charge carrier dynamics using ultrafast spectroelectrochemistry and achieve quantitative agreement between experiments and theory, including a vanishingly low gain threshold for doubly doped QDs. Over a range of wavelengths with appreciable gain coefficients, the gain thresholds reach record-low values of ∼1 × 10-5 excitons per QD. These results demonstrate a high level of control over the gain threshold in doped QD solids, opening a new route for the creation of cheap, solution-processable, low-threshold QD lasers.

Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infrared light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene phototransistors by performing steady-state and time-dependent measurements over a large temperature range of 80-300 K. We find that the temperature dependence of photoinduced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 10¹⁰ Jones at a wavelength of 1280 nm and a temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate voltage-dependent characterization presented here constitutes an important step in expanding our knowledge of charge transfer at interfaces of low-dimensional materials and toward the realization of next-generation optoelectronic devices.

Promoted Hole Transport Capability by Improving Lateral Current Spreading for High-Efficiency Quantum Dot Light-Emitting Diodes

Carrier imbalance resulting from stronger electron injection from ZnO into quantum-dot (QD) emissive layer than hole injection is one critical issue that constrains the performance of QDs-based light-emitting diodes (QLEDs). This study reports highly efficient inverted QLEDs enabled by periodic insertion of MoO3 into (4,4'-bis(N-carbazolyl)-1,1'-biphenyl) (CBP) hole transport layer (HTL). The periodic ultrathin MoO3/CBP-stacked HTL results in improved lateral current spreading for the QLEDs, which significantly relieves the crowding of holes and thus enhances hole transport capability across the CBP in QLEDs. Comprehensive analysis on the photoelectric properties of devices shows that the optimal thickness for MoO3 interlayer inserted in CBP is only ≈1 nm. The resulting devices with periodic two insertion layers of MoO3 into CBP exhibit better performance compared with the CBP-only ones, such that the peak current efficiency is 88.7 cd A-1 corresponding to the external quantum efficiency of 20.6%. Furthermore, the resulting QLEDs show an operational lifetime almost 2.5 times longer compared to CBP-only devices.

Manipulating Electronic Structure from the Bottom-Up: Colloidal Nanocrystal-Based Semiconductors

Semiconductors assembled from colloidal nanocrystals (NCs) are often described in the same terms as their single-crystalline counterparts with references to conduction and valence band edges, doping densities, and electronic defects; however, how and why semiconductor properties manifest in these bottom-up fabricated thin films can be fundamentally different. In this Perspective, we describe the factors that determine the electronic structure in colloidal NC-based semiconductors, and comment on approaches for measuring or calculating this electronic structure. Finally, we discuss future directions for these semiconductors and highlight their potential to bridge the divide between localized quantum effects and long-range transport in thin films.

Reversible Electron Doping of Layered Metal Hydroxide Nanoplates (M = Co, Ni) Using n-Butyllithium

Ambipolar doping of metal oxides is critical toward broadening the functionality of semiconducting oxides in electronic devices. Most metal oxides, however, show a strong preference for a single doping polarity due to the intrinsic stability of particular defects in an oxide lattice. In this work, we demonstrate that layered metal hydroxide nanomaterials of Co and Ni, which are intrinsically p-doped in their anhydrous rock salt form, can be n-doped using n-BuLi as a strong electron donor. A combination of X-ray characterization techniques reveal that hydroxide vacancy formation, Li⁺ adsorption, and varying degrees of electron delocalization are responsible for the stability of injected electrons. The doped electrons induce conductivity increases of 4-6 orders of magnitude relative to the undoped M(OH)₂. We anticipate that chemical electron doping of layered metal hydroxides may be a general strategy to increase carrier concentration and stability for n-doping of intrinsically p-type metal oxides.

Size- and Temperature-Dependent Intraband Optical Properties of Heavily n-Doped PbS Colloidal Quantum Dot Solid-State Films

Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via doping, permits exploitation of the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics allows envisaging cheap mid- and long-wavelength infrared photodetectors and light-emitting devices, which today employ epitaxial materials. As intraband devices start to emerge, thorough studies of the basic properties of intraband transitions in different CQD materials are needed to guide technological research. In this work, we investigate the size and temperature dependence of the intraband transition in heavily n-doped PbS quantum dot (QD) films. In the studied QD size range (5-8 nm), the intraband energy spans from 209 to 151 meV. We measure the intraband absorption coefficient of heavily doped PbS QD films to be around 2 × 10⁴ cm^-1, proving that intraband absorption is as strong as interband absorption. We demonstrate a negative dependence of the intraband energy with temperature, in contrast to the positive dependence of the interband transition. Also opposite to the interband case, the temperature dependence of the intraband energy increases with decreasing size, going from -29 μeV/K to -49 μeV/K in the studied size range.

Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots

Optical sensing in the mid- and long-wave infrared (MWIR, LWIR) is of paramount importance for a large spectrum of applications including environmental monitoring, gas sensing, hazard detection, food and product manufacturing inspection, and so forth. Yet, such applications to date are served by costly and complex epitaxially grown HgCdTe quantum-well and quantum-dot infrared photodetectors. The possibility of exploiting low-energy intraband transitions make colloidal quantum dots (CQD) an attractive low-cost alternative to expensive low bandgap materials for infrared applications. Unfortunately, fabrication of quantum dots exhibiting intraband absorption is technologically constrained by the requirement of controlled heavy doping, which has limited, so far, MWIR and LWIR CQD detectors to mercury-based materials. Here, we demonstrate intraband absorption and photodetection in heavily doped PbS colloidal quantum dots in the 5-9 μm range, beyond the PbS bulk band gap, with responsivities on the order of 10-4 A/W at 80 K. We have further developed a model based on quantum transport equations to understand the impact of electron population of the conduction band in the performance of intraband photodetectors and offer guidelines toward further performance improvement.

Engineering the Band Alignment in QD Heterojunction Films via Ligand Exchange

Colloidal quantum dots (QDs) allow great flexibility in the design of optoelectronic devices, thanks to their size-dependent optical and electronic properties and the possibility to fabricate thin films with solution-based processing. In particular, in QD-based heterojunctions, the band gap of both components can be controlled by varying the size of the QDs. However, control over the band alignment between the two materials is required to tune the dynamics of carrier transfer across a heterostructure. We demonstrate that ligand exchange strategies can be used to control the band alignment of PbSe and CdSe QDs in a mixed QD solid, shifting it from a type-I to a type-II alignment. The change in alignment is observed in both spectroelectrochemical and transient absorption measurements, leading to a change in the energy of the conduction band edges in the two materials and in the direction of electron transfer upon photoexcitation. Our work demonstrates the possibility to tune the band offset of QD heterostructures via control of the chemical species passivating the QD surface, allowing full control over the energetics of the heterostructure without requiring changes in the QD composition.

Electrochemical Deposition of Conformal Semiconductor Layers in Nanoporous Oxides for Sensitized Photoelectrodes

Nanoporous photoelectrodes with photoactive semiconductors have been investigated for various energy applications such as solar cells and photoelectrochemical cells, but the deposition of the semiconducting materials on the nanoporous electrodes has been very challenging due to pore clogging or complete pore filling. Here, we propose a band alignment model that explains the morphology of the electrochemically deposited semiconductor layer on the semiconducting nanoporous oxide electrode. Briefly, the coating material with a conduction band edge higher (i.e., more negative) than that of the electrode material forms a conformal coating, which maintains the initial nanoporous structure. As a result, a conformal CdSe layer can be electrodeposited onto TiO₂ nanotubes, which can be used as a photoelectrode of a sensitized solar cell. The electron dynamics studies revealed that the CdSe-sensitized TiO₂ nanotube electrode exhibited faster charge transport and slower charge recombination than its dye-sensitized counterpart, which has been ascribed to the passivation of surface traps and the physically blocked back-electron transfer by the CdSe layer as well as the higher conduction band of CdSe.

Efficient and Stable Inverted Quantum Dot Light-Emitting Diodes Enabled by An Inorganic Copper-Doped Tungsten Phosphate Hole-Injection Layer

Inorganic interfacial buffer layers have widely been employed for efficient and long lifetime optoelectronic devices due to their high carrier mobility and excellent chemical/thermal stability. In this paper, we developed a solution-processed inorganic tungsten phosphate (TPA) as hole injection layer (HIL) in inverted quantum dot light-emitting diodes (QLEDs) achieving a high external quantum efficiency (EQE) of up to ∼20%. Further, the copper ions are doped into tungsten phosphate (Cu:TPA) which leads to an enhancement in hole injection due to increased hole mobility and conductivity of TPA as well as decreased hole injection barrier, enabling better charge balance in QLEDs and lower turn-on voltage from 5 to 2.5 V. Compared with the devices using conventional organic poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) HIL, the half-lifetime of Cu:TPA-based devices is over 3000 h at an initial brightness of 100 cd m^-2, almost 5-fold operating lifetime enhancement.

Polarized near-infrared intersubband absorptions in CdSe colloidal quantum wells

Colloidal quantum wells are two-dimensional materials grown with atomically-precise thickness that dictates their electronic structure. Although intersubband absorption in epitaxial quantum wells is well-known, analogous observations in non-epitaxial two-dimensional materials are sparse. Here we show that CdSe nanoplatelet quantum wells have narrow (30–200 meV), polarized intersubband absorption features when photoexcited or under applied bias, which can be tuned by thickness across the near-infrared (NIR) spectral window (900–1600 nm) inclusive of important telecommunications wavelengths. By examination of the optical absorption and polarization-resolved measurements, the NIR absorptions are assigned to electron intersubband transitions. Under photoexcitation, the intersubband features display hot carrier and Auger recombination effects similar to excitonic absorptions. Sequenced two-color photoexcitation permits the sub-picosecond modulation of the carrier temperature in such colloidal quantum wells. This work suggests that colloidal quantum wells may be promising building blocks for NIR technologies.

Multiple infrared lasing and detection technologies exploit intersubband transitions of epitaxial quantum wells, but such transitions are mainly limited to the mid-infrared. Here, the authors report narrow, polarized intersubband transitions up to telecom wavelengths in CdSe colloidal quantum wells.

Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface

The efficiency of nanocrystal (NC)-based devices is often limited by the presence of surface states that lead to localized energy levels in the bandgap. Yet, a complete understanding of the nature of these traps remains challenging. Although theoretical modeling has greatly improved our comprehension of the NC surface, several experimental studies suggest the existence of metal-based traps that have not yet been found with theoretical methods. Since there are indications that these metal-based traps form in the presence of excess electrons, the present work uses density functional theory (DFT) calculations to study the effects of charging II-VI semiconductor NCs with either full or imperfect surface passivation. It is found that charge injection can lead to trap-formation via two pathways: metal atom ejection from perfectly passivated NCs or metal-metal dimer-formation in imperfectly passivated NCs. Fully passivated CdTe NCs are observed to be stable up to a charge of two electrons. Further reduction leads to charge localization on a surface Cd atom and the formation of in-gap states. The effects of suboptimal passivation are probed by charging NCs where an X-type ligand is removed from the (100) plane. In this case, injection of even one electron leads to Cd-dimerization and trap-formation. Addition of an L-type amine ligand prevents this dimer-formation and is suggested to also prevent trapping of photoexcited electrons in charge neutral NCs. The results presented in this work are generalized to NCs of different sizes and other II-VI semiconductors. This has clear implications for n-doping II-VI semiconductor NCs without introducing surface traps due to metal ion reduction. The possible effect of these metal ion localized traps on the photoluminescence efficiency of neutral NCs is also discussed.

Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses

The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO₂ or the use of electrolyte. SiO₂ allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF₃ ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm^-2. We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF₃ substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.

Doping as a Strategy to Tune Color of 2D Colloidal Nanoplatelets

Among colloidal nanocrystals, 2D nanoplatelets (NPLs) made of II-VI compounds appear as a special class of emitters with an especially narrow photoluminescence signal. However, the PL signal in the case of NPLs is only tunable by a discrete step. Here, we demonstrate that doping is a viable path to finely tune the color of these NPLs from green to red, making them extremely interesting as phosphors for wide-gamut display. In addition, using a combination of luminescence spectroscopy, tight-binding simulation, transport, and photoemission, we provide a consistent picture for the Ag⁺-doped CdSe NPLs. The Ag-activated state is strongly bound and located 340 meV above the valence band of the bulk material. The Ag dopant induces a relative shift of the Fermi level toward the valence band by up to 400 meV but preserves the n-type nature of the material.

Electron-Promoted X-Type Ligand Displacement at CdSe Quantum Dot Surfaces

Quantum dot surfaces are redox active and are known to influence the electronic properties of nanocrystals, yet the molecular-level changes in surface chemistry that occur upon addition of charge are not well understood. In this paper, we report a systematic study monitoring changes in surface coordination chemistry in 3.4 nm CdSe quantum dots upon remote chemical doping by the radical anion reductant sodium naphthalenide (Na[C₁₀H₈]). These studies reveal a new mechanism for charge-balancing the added electrons that localize on surface states through loss of up to ca. 5% of the native anionic carboxylate ligands, as quantified through a combination of UV-vis absorption, ¹H NMR, and FTIR spectroscopies. A new method for distinguishing between reduction of surface metal and chalcogenide ions by monitoring ligand loss and optical changes upon doping is introduced. This work emphasizes the importance of studying changes in surface chemistry with remote chemical doping and is more broadly contextualized within the redox reactivity of the QD surface.

Reversible regulation of CdTe quantum dots fluorescence intensity based on Prussian blue with high anti-fatigue performance

A fluorescence switching device with excellent anti-fatigue performance based on the electrochromic material Prussian blue and fluorophore CdTe quantum dots was realized. The fluorescence switching device ultimately demonstrated a high fluorescence contrast, short response time and superior anti-fatigue property. Notably, the fluorescence contrast remains unchanged after 133 cycles.

Tungsten Trioxide Doped with CdSe Quantum Dots for Smart Windows

Nanocrystal quantum dots (QDs) provide tunable optoelectronic properties on the basis of their dimension. CdSe QDs, which are size-dependent colloidal nanocrystals, are used for efficient electrochromic devices owing to their unique properties in modulating quantum confinement, resulting in enhanced electron insertion during the electrochromic process. Incorporating a well-known metal oxide electrochromic material such as WO₃ into CdSe QDs enhances the redox process. Herein, we propose a facile method for producing and optimizing CdSe QDs doped in WO₃. The fabrication of the electrochromic film involves a solution and annealing process. Moreover, the effect of the QD size to optimize the electrochromic layer is studied. As a result, the coloration efficiency of WO₃ and optimized CdSe QD-WO₃ are obtained as 68.6 and 112.3 cm²/C, respectively. Thus, size-tunable nanocrystal QDs combined with a metal oxide yield high-performance electrochromic devices and are promising candidates for producing smart windows.

Tunable Electron-Injection Channels of Heterostructured ZnSe@CdTe Nanocrystals for Surface-Chemistry-Involved Electrochemiluminescence

Tunable charge transfer in and out of nanocrystals (NCs) is crucial to their profound light-emitting applications. Herein a convenient strategy toward tunable electron-injection channels of NCs was achieved by partially coating highly passivated CdTe NCs with unperfected ZnSe shell. Potential- and spectrum-resolved electrochemiluminescence (ECL) characterizations proved that radiative charge recombination for ECL of the heterostructured ZnSe@CdTe NCs only occurred within CdTe core, whereas configurational ions in ECL solution could electrostatically or chemically change the surface states of both the ZnSe shell and the uncoated CdTe core, resulting in tunable electron-injection channels for ECL of ZnSe@CdTe NCs. S^2- anion postponed the electron-injection channel for ECL of ZnSe@CdTe NCs from -1.44 to -1.58 V, Zn²⁺ cation presented two electron-injection channels for ECL at -1.53 and -1.22 V, respectively, whereas Cd²⁺ cation enabled three electron-injection channels for ECL at -1.53, -1.18, and -0.95 V, respectively. The "valve"-like role of configurational ions on the electron-injection channels of ZnSe@CdTe NCs is promising to design novel electrochemiluminophores.

Conduction Band Fine Structure in Colloidal HgTe Quantum Dots

HgTe colloidal quantum dots (QDs) are of interest because quantum confinement of semimetallic bulk HgTe allows one to synthetically control the bandgap throughout the infrared. Here, we synthesize highly monodisperse HgTe QDs and tune their doping both chemically and electrochemically. The monodispersity of the QDs was evaluated using small-angle X-ray scattering (SAXS) and suggests a diameter distribution of ∼10% across multiple batches of different sizes. Electron-doped HgTe QDs display an intraband absorbance and bleaching of the first two excitonic features. We see splitting of the intraband peaks corresponding to electronic transitions from the occupied 1S_e state to a series of nondegenerate 1P_e states. Spectroelectrochemical studies reveal that the degree of splitting and relative intensity of the intraband features remain constant across doping levels up to two electrons per QD. Theoretical modeling suggests that the splitting of the 1P_e level arises from spin-orbit coupling and reduced QD symmetry. The fine structure of the intraband transitions is observed in the ensemble studies due to the size uniformity of the as-synthesized QDs and strong spin-orbit coupling inherent to HgTe.