1
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Duan S, Tian G, Luo Y. Theoretical and computational methods for tip- and surface-enhanced Raman scattering. Chem Soc Rev 2024. [PMID: 38596836 DOI: 10.1039/d3cs01070h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Raman spectroscopy is a versatile tool for acquiring molecular structure information. The incorporation of plasmonic fields has significantly enhanced the sensitivity and resolution of surface-enhanced Raman scattering (SERS) and tip-enhanced Raman spectroscopy (TERS). The strong spatial confinement effect of plasmonic fields has challenged the conventional Raman theory, in which a plane wave approximation for the light has been adopted. In this review, we comprehensively survey the progress of a generalized theory for SERS and TERS in the framework of effective field Hamiltonian (EFH). With this approach, all characteristics of localized plasmonic fields can be well taken into account. By employing EFH, quantitative simulations at the first-principles level for state-of-the-art experimental observations have been achieved, revealing the underlying intrinsic physics in the measurements. The predictive power of EFH is demonstrated by several new phenomena generated from the intrinsic spatial, momentum, time, and energy structures of the localized plasmonic field. The corresponding experimental verifications are also carried out briefly. A comprehensive computational package for modeling of SERS and TERS at the first-principles level is introduced. Finally, we provide an outlook on the future developments of theory and experiments for SERS and TERS.
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Affiliation(s)
- Sai Duan
- Collaborative Innovation Center of Chemistry for Energy Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, MOE Key Laboratory of Computational Physical Sciences, Department of Chemistry, Fudan University, Shanghai 200433, China.
| | - Guangjun Tian
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Yi Luo
- Hefei National Research Center for Physical Science at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
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2
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Tanwar M, Kumar R. Effect of dimensionality on the excitation wavelength dependence of the Fano-Raman line-shape: a brief review. Nanoscale 2024. [PMID: 38470369 DOI: 10.1039/d3nr00445g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
The already existing heterogeneity in nanomaterials makes it an intriguing yet complex system to study size effect vis-à-vis other external perturbations and thereby local modifications at the nanoscale, thus demanding an improved tool and analysis for the choice of study. The analysis of existential subtle perturbations and interactions in a wide class of materials using Raman spectromicroscopy has proved to be of utmost importance, and various phenomena such as quantum confinement and its interplay with Fano resonance have already been investigated in nanomaterials, including the role of various perturbations such as temperature, pressure, doping, bias, and excitation wavelength on Raman spectral line shape parameters. Amongst different perturbations that cause a change in the spectral profile of Fano resonance, the gray area of wavelength dependence of Fano Raman line shape profiles has been least analysed in the literature. Moreover, the true signature of Fano resonance in nanoscaled systems, which is the wavelength dependence of Fano interaction, remains the least discussed. This review summarises the wavelength dependent correlation of Fano resonance and its effect on the Raman spectral line-shape parameters in some bulk materials, nanomaterials, and molecular systems involving heavily doped p-type crystalline silicon, 2-D MoS2, graphene, WS2, single walled carbon nanotubes, etc. A brief overview of Fano resonance in metamaterials and photonic systems is also provided.
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Affiliation(s)
- Manushree Tanwar
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19147, USA
| | - Rajesh Kumar
- Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India.
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3
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Yang H, Hu R, Wu H, He X, Zhou Y, Xue Y, He K, Hu W, Chen H, Gong M, Zhang X, Tan PH, Hernández ER, Xie Y. Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning. Nano Lett 2024; 24:2789-2797. [PMID: 38407030 PMCID: PMC10921996 DOI: 10.1021/acs.nanolett.3c04815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 02/19/2024] [Accepted: 02/20/2024] [Indexed: 02/27/2024]
Abstract
Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) and the application of a semantic segmentation convolutional neural network (CNN) to accurately and rapidly identify thicknesses of MoS2 flakes. A second CNN model is trained to provide precise predictions on the twist angle of CVD-grown bilayer flakes. This model harnessed a data set comprising over 10,000 synthetic images, encompassing geometries spanning from hexagonal to triangular shapes. Subsequent validation of the deep learning predictions on twist angles was executed through the second harmonic generation and Raman spectroscopy. Our results introduce a scalable methodology for automated inspection of twisted atomically thin CVD-grown bilayers.
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Affiliation(s)
- Haitao Yang
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Ruiqi Hu
- Department
of Materials Science and Engineering, University
of Delaware, Newark, Delaware 19716, United States
| | - Heng Wu
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xiaolong He
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Yan Zhou
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Phonon
Engineering Research Center of Jiangsu Province, School of Physics
and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Yizhe Xue
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Kexin He
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Wenshuai Hu
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Haosen Chen
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Mingming Gong
- School
of Materials Science and Engineering, Northwestern
Polytechnical University, Xi’an 710072, China
| | - Xin Zhang
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ping-Heng Tan
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | | | - Yong Xie
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
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4
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Mei R, Lin ML, Wu H, Chen LS, Shi YM, Wei Z, Tan PH. Interlayer bond polarizability model for interlayer phonons in van der Waals heterostructures. Nanoscale 2024; 16:4004-4013. [PMID: 38328885 DOI: 10.1039/d3nr06437a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Raman scattering provides essential insights into phonons, electronic structures and electron-phonon coupling within solids through the intensity of Raman peaks, which cannot be easily quantified using the classical bond polarizability model. The interlayer bond polarizability model (IBPM) had been developed to understand the Raman intensity of layer-breathing modes (LBMs) in two-dimensional materials. However, the quantitative understanding of the LBM intensity of a van der Waals heterostructure (vdWH) remains challenging. Here, in polynary vdWHs comprising twisted multilayer graphene (tMLG), MoS2 and hBN, we observed a series of LBMs, whose intensity is markedly dependent on the excitation energy and twist angle of the tMLG constituent. An improved IBPM is proposed to quantitatively understand the Raman intensity of LBMs in the tMLG-based vdWHs, including the emergence or absence of a specific LBM when the excitation energy is resonant with the electronic states of tMLG or MoS2 constituents. This work underscores the significant potential of the improved IBPM in accurately understanding and predicting the intensity profile of LBM in polynary vdWHs, even for the case of Raman scattering with excitation energies selectively resonant with the electronic states of the corresponding specific constituents.
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Affiliation(s)
- Rui Mei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lin-Shang Chen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Yan-Meng Shi
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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5
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Xu C, Barden N, Alexeev EM, Wang X, Long R, Cadore AR, Paradisanos I, Ott AK, Soavi G, Tongay S, Cerullo G, Ferrari AC, Prezhdo OV, Loh ZH. Ultrafast Charge Transfer and Recombination Dynamics in Monolayer-Multilayer WSe 2 Junctions Revealed by Time-Resolved Photoemission Electron Microscopy. ACS Nano 2024; 18:1931-1947. [PMID: 38197410 DOI: 10.1021/acsnano.3c06473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The ultrafast carrier dynamics of junctions between two chemically identical, but electronically distinct, transition metal dichalcogenides (TMDs) remains largely unknown. Here, we employ time-resolved photoemission electron microscopy (TR-PEEM) to probe the ultrafast carrier dynamics of a monolayer-to-multilayer (1L-ML) WSe2 junction. The TR-PEEM signals recorded for the individual components of the junction reveal the sub-ps carrier cooling dynamics of 1L- and 7L-WSe2, as well as few-ps exciton-exciton annihilation occurring on 1L-WSe2. We observe ultrafast interfacial hole (h) transfer from 1L- to 7L-WSe2 on an ∼0.2 ps time scale. The resultant excess h density in 7L-WSe2 decays by carrier recombination across the junction interface on an ∼100 ps time scale. Reminiscent of the behavior at a depletion region, the TR-PEEM image reveals the h density accumulation on the 7L-WSe2 interface, with a decay length ∼0.60 ± 0.17 μm. These charge transfer and recombination dynamics are in agreement with ab initio quantum dynamics. The computed orbital densities reveal that charge transfer occurs from the basal plane, which extends over both 1L and ML regions, to the upper plane localized on the ML region. This mode of charge transfer is distinctive to chemically homogeneous junctions of layered materials and constitutes an additional carrier deactivation pathway that should be considered in studies of 1L-TMDs found alongside their ML, a common occurrence in exfoliated samples.
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Affiliation(s)
- Ce Xu
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Natalie Barden
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | | | - Anna K Ott
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
- Institute of Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giulio Cerullo
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
- IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Zhi-Heng Loh
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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6
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Vuppala S, Chitumalla RK, Choi S, Kim T, Park H, Jang J. Machine Learning-Assisted Computational Screening of Adhesive Molecules Derived from Dihydroxyphenyl Alanine. ACS Omega 2024; 9:994-1000. [PMID: 38222596 PMCID: PMC10785072 DOI: 10.1021/acsomega.3c07208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Revised: 11/28/2023] [Accepted: 11/30/2023] [Indexed: 01/16/2024]
Abstract
Marine mussels adhere to virtually any surface via 3,4-dihydroxyphenyl-L-alanines (L-DOPA), an amino acid largely contained in their foot proteins. The biofriendly, water-repellent, and strong adhesion of L-DOPA are unparalleled by any synthetic adhesive. Inspired by this, we computationally designed diverse derivatives of DOPA and studied their potential as adhesives or coating materials. We used first-principles calculations to investigate the adsorption of the DOPA derivatives on graphite. The presence of an electron-withdrawing group, such as nitrogen dioxide, strengthens the adsorption by increasing the π-π interaction between DOPA and graphite. To quantify the distribution of electron charge and to gain insights into the charge distribution at interfaces, we performed Bader charge analysis and examined charge density difference plots. We developed a quantitative structure-property relationship (QSPR) model using an artificial neural network (ANN) to predict the adsorption energy. Using the three-dimensional and quantum mechanical electrostatic potential of a molecule as a descriptor, the present quantum NN model shows promising performance as a predictive QSPR model.
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Affiliation(s)
- Srimai Vuppala
- Department
of Nanoenergy Engineering, Pusan National
University, Busan 46241, Republic
of Korea
| | - Ramesh Kumar Chitumalla
- Department
of Nanoenergy Engineering, Pusan National
University, Busan 46241, Republic
of Korea
| | - Seyong Choi
- Department
of Nanoenergy Engineering, Pusan National
University, Busan 46241, Republic
of Korea
| | - Taeho Kim
- Department
of Bioscience and Biotechnology, Sejong
University, Seoul 05006, Republic
of Korea
| | - Hwangseo Park
- Department
of Bioscience and Biotechnology, Sejong
University, Seoul 05006, Republic
of Korea
| | - Joonkyung Jang
- Department
of Nanoenergy Engineering, Pusan National
University, Busan 46241, Republic
of Korea
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7
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Xu C, Zhou G, Alexeev EM, Cadore AR, Paradisanos I, Ott AK, Soavi G, Tongay S, Cerullo G, Ferrari AC, Prezhdo OV, Loh ZH. Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS 2 Is Accelerated by Wrinkling. ACS Nano 2023; 17:16682-16694. [PMID: 37581747 DOI: 10.1021/acsnano.3c02917] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.
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Affiliation(s)
- Ce Xu
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Guoqing Zhou
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Ioannis Paradisanos
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Anna K Ott
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giulio Cerullo
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
- IFN-CNR, Piazza Leonardo da Vinci 32, I-20133, Milano, Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Oleg V Prezhdo
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Zhi-Heng Loh
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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8
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Hao H, Lin ML, Xu B, Wu H, Wang Y, Peng H, Tan PH, Tong L, Zhang J. Enhanced Layer-Breathing Modes in van der Waals Heterostructures Based on Twisted Bilayer Graphene. ACS Nano 2023. [PMID: 37267416 DOI: 10.1021/acsnano.3c00022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The characterization of interlayer coupling in two-dimensional van der Waals heterostructures (vdWHs) is essential to understand their quantum behaviors and structural functionalities. Interlayer shear and layer-breathing (LB) phonons carry rich information on interlayer interaction, but they are usually too weak to be detected via standard Raman spectroscopy due to the weak electron-phonon coupling (EPC). Here, we report a universal strategy to enhance LB modes of vdWHs based on twisted bilayer graphene (tBLG). In both tBLG/hBN and tBLG/MoS2 vdWHs, the resonantly excited electrons in tBLG can strongly couple to LB phonons extended over the entire layers in the vdWHs, whose resonance condition is tunable by the twist angle of tBLG. In vdWHs containing twisted graphene layers with multiple twisted interfaces, the EPC of LB phonons coming from the collective LB vibrations of entire heterostructure layers can be tuned by resonant excitation of programmable van Hove singularities according to each twisted interface. The universality and tunability of enhanced LB phonons by tBLG make it a promising method to investigate EPC and interlayer interaction in related vdWHs.
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Affiliation(s)
- He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Bo Xu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
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9
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Xu B, Zhu J, Xiao F, Jiao C, Liang Y, Wen T, Wu S, Zhang Z, Lin L, Pei S, Jia H, Chen Y, Ren Z, Wei X, Huang W, Xia J, Wang Z. Identifying, Resolving, and Quantifying Anisotropy in ReS 2 Nanomechanical Resonators. Small 2023; 19:e2300631. [PMID: 36897000 DOI: 10.1002/smll.202300631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/03/2023] [Indexed: 06/15/2023]
Abstract
As an emerging two-dimensional semiconductor, rhenium disulfide (ReS2 ) is renowned for its strong in-plane anisotropy in electrical, optical, and thermal properties. In contrast to the electrical, optical, optoelectrical, and thermal anisotropies that are extensively studied in ReS2 , experimental characterization of mechanical properties has largely remained elusive. Here, it is demonstrated that the dynamic response in ReS2 nanomechanical resonators can be leveraged to unambiguously resolve such disputes. Using anisotropic modal analysis, the parameter space for ReS2 resonators in which mechanical anisotropy is best manifested in resonant responses is determined. By measuring their dynamic response in both spectral and spatial domains using resonant nanomechanical spectromicroscopy, it is clearly shown that ReS2 crystal is mechanically anisotropic. Through fitting numerical models to experimental results, it is quantitatively determined that the in-plane Young's moduli are 127 and 201 GPa along the two orthogonal mechanical axes. In combination with polarized reflectance measurements, it is shown that the mechanical soft axis aligns with the Re-Re chain in the ReS2 crystal. These results demonstrate that dynamic responses in nanomechanical devices can offer important insights into intrinsic properties in 2D crystals and provide design guidelines for future nanodevices with anisotropic resonant responses.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lin Lin
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hao Jia
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ying Chen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ziming Ren
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xueyong Wei
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Wen Huang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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10
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Balqis N, Mohamed Jan B, Simon Cornelis Metselaar H, Sidek A, Kenanakis G, Ikram R. An Overview of Recycling Wastes into Graphene Derivatives Using Microwave Synthesis; Trends and Prospects. Materials (Basel) 2023; 16:ma16103726. [PMID: 37241354 DOI: 10.3390/ma16103726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 04/21/2023] [Accepted: 04/27/2023] [Indexed: 05/28/2023]
Abstract
It is no secret that graphene, a two-dimensional single-layered carbon atom crystal lattice, has drawn tremendous attention due to its distinct electronic, surface, mechanical, and optoelectronic properties. Graphene also has opened up new possibilities for future systems and devices due to its distinct structure and characteristics which has increased its demand in a variety of applications. However, scaling up graphene production is still a difficult, daunting, and challenging task. Although there is a vast body of literature reported on the synthesis of graphene through conventional and eco-friendly methods, viable processes for mass graphene production are still lacking. This review focuses on the variety of unwanted waste materials, such as biowastes, coal, and industrial wastes, for producing graphene and its potential derivatives. Among the synthetic routes, the main emphasis relies on microwave-assisted production of graphene derivatives. In addition, a detailed analysis of the characterization of graphene-based materials is presented. This paper also highlights the current advances and applications through the recycling of waste-derived graphene materials using microwave-assisted technology. In the end, it would alleviate the current challenges and forecast the specific direction of waste-derived graphene future prospects and developments.
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Affiliation(s)
- Nuralmeera Balqis
- Department of Chemical Engineering, Faculty of Engineering, Universiti Malaya, Kuala Lumpur 50603, Malaysia
| | - Badrul Mohamed Jan
- Department of Chemical Engineering, Faculty of Engineering, Universiti Malaya, Kuala Lumpur 50603, Malaysia
| | | | - Akhmal Sidek
- Petroleum Engineering Department, School of Chemical and Energy Engineering, Faculty of Engineering, Universiti Teknologi Malaysia, Johor Bahru 81310, Malaysia
| | - George Kenanakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, N. Plastira 100, Vasilika Vouton, GR-700 13 Heraklion, Crete, Greece
| | - Rabia Ikram
- Department of Chemical Engineering, Faculty of Engineering, Universiti Malaya, Kuala Lumpur 50603, Malaysia
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11
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Zhou J, Cui J, Du S, Zhao Z, Guo J, Li S, Zhang W, Liu N, Li X, Bai Q, Guo Y, Mi S, Cheng Z, He L, Nie JC, Yang Y, Dou R. A natural indirect-to-direct band gap transition in artificially fabricated MoS 2 and MoSe 2 flowers. Nanoscale 2023; 15:7792-7802. [PMID: 37021968 DOI: 10.1039/d3nr00477e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.
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Affiliation(s)
- Jun Zhou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Juan Cui
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Jianfeng Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Songyang Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Xiaotian Li
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - J C Nie
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Yu Yang
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Ruifen Dou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
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12
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Ahn E, Kim B, Park S, Erwin AL, Sung SH, Hovden R, Mosalaganti S, Cho US. Batch Production of High-Quality Graphene Grids for Cryo-EM: Cryo-EM Structure of Methylococcus capsulatus Soluble Methane Monooxygenase Hydroxylase. ACS Nano 2023; 17:6011-6022. [PMID: 36926824 PMCID: PMC10062032 DOI: 10.1021/acsnano.3c00463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 03/13/2023] [Indexed: 06/18/2023]
Abstract
Cryogenic electron microscopy (cryo-EM) has become a widely used tool for determining the protein structure. Despite recent technical advances, sample preparation remains a major bottleneck for several reasons, including protein denaturation at the air-water interface, the presence of preferred orientations, nonuniform ice layers, etc. Graphene, a two-dimensional allotrope of carbon consisting of a single atomic layer, has recently gained attention as a near-ideal support film for cryo-EM that can overcome these challenges because of its superior properties, including mechanical strength and electrical conductivity. Here, we introduce a reliable, easily implemented, and reproducible method to produce 36 graphene-coated grids within 1.5 days. To demonstrate their practical application, we determined the cryo-EM structure of Methylococcus capsulatus soluble methane monooxygenase hydroxylase (sMMOH) at resolutions of 2.9 and 2.5 Å using Quantifoil and graphene-coated grids, respectively. We found that the graphene-coated grid has several advantages, including a smaller amount of protein required and avoiding protein denaturation at the air-water interface. By comparing the cryo-EM structure of sMMOH with its crystal structure, we identified subtle yet significant geometrical changes at the nonheme diiron center, which may better indicate the active site configuration of sMMOH in the resting/oxidized state.
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Affiliation(s)
- Eungjin Ahn
- Department
of Biological Chemistry, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Byungchul Kim
- Department
of Biological Chemistry, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Soyoung Park
- Department
of Biological Chemistry, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department
of Fine Chemistry, Seoul National University
of Science and Technology, Seoul 139-743, Korea
| | - Amanda L. Erwin
- Department
of Cell and Developmental Biology, University
of Michigan, Ann Arbor, Michigan 48109, United
States
- Life
Sciences Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Suk Hyun Sung
- Department
of Materials Science and Engineering, University
of Michigan, Ann Arbor, Michigan 48105, United
States
| | - Robert Hovden
- Department
of Materials Science and Engineering, University
of Michigan, Ann Arbor, Michigan 48105, United
States
- Applied
Physics Program, University of Michigan, Ann Arbor, Michigan 48105, United States
| | - Shyamal Mosalaganti
- Department
of Cell and Developmental Biology, University
of Michigan, Ann Arbor, Michigan 48109, United
States
- Life
Sciences Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Uhn-Soo Cho
- Department
of Biological Chemistry, University of Michigan, Ann Arbor, Michigan 48109, United States
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13
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Tan QH, Li YM, Lai JM, Sun YJ, Zhang Z, Song F, Robert C, Marie X, Gao W, Tan PH, Zhang J. Quantum interference between dark-excitons and zone-edged acoustic phonons in few-layer WS 2. Nat Commun 2023; 14:88. [PMID: 36604415 PMCID: PMC9816112 DOI: 10.1038/s41467-022-35714-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 12/15/2022] [Indexed: 01/07/2023] Open
Abstract
Fano resonance which describes a quantum interference between continuum and discrete states, provides a unique method for studying strongly interacting physics. Here, we report a Fano resonance between dark excitons and zone-edged acoustic phonons in few-layer WS2 by using the resonant Raman technique. The discrete phonons with large momentum at the M-point of the Brillouin zone and the continuum dark exciton states related to the optically forbidden transition at K and Q valleys are coupled by the exciton-phonon interactions. We observe rich Fano resonance behaviors across layers and modes defined by an asymmetry-parameter q: including constructive interference with two mirrored asymmetry Fano peaks (weak coupling, q > 1 and q < - 1), and destructive interference with Fano dip (strong coupling, ∣q∣ < < 1). Our results provide new insight into the exciton-phonon quantum interference in two-dimensional semiconductors, where such interferences play a key role in their transport, optical, and thermodynamic properties.
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Affiliation(s)
- Qing-Hai Tan
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China ,grid.59025.3b0000 0001 2224 0361Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
| | - Yun-Mei Li
- grid.12955.3a0000 0001 2264 7233Department of Physics, Xiamen University, Xiamen, 361005 China
| | - Jia-Min Lai
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Yu-Jia Sun
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Zhe Zhang
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Feilong Song
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Cedric Robert
- grid.462768.90000 0004 0383 4043University of Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France
| | - Xavier Marie
- grid.462768.90000 0004 0383 4043University of Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France
| | - Weibo Gao
- grid.59025.3b0000 0001 2224 0361Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore ,grid.59025.3b0000 0001 2224 0361The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371 Singapore, Singapore ,grid.4280.e0000 0001 2180 6431Centre for Quantum Technologies, National University of Singapore, Singapore, 117543 Singapore
| | - Ping-Heng Tan
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Jun Zhang
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China ,grid.410726.60000 0004 1797 8419CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100049 China
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14
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Rejhon M, Lavini F, Khosravi A, Shestopalov M, Kunc J, Tosatti E, Riedo E. Relation between interfacial shear and friction force in 2D materials. Nat Nanotechnol 2022; 17:1280-1287. [PMID: 36316542 DOI: 10.1038/s41565-022-01237-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Accepted: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical and chemical properties. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. By performing measurements on bulk graphite, and on epitaxial graphene films on SiC with different stacking orders and twisting, as well as in the presence of intercalated hydrogen, we find that the interfacial transverse shear modulus is critically controlled by the stacking order and the atomic layer-substrate interaction. Importantly, we demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. The experiments demonstrate a reciprocal relationship between friction force per unit contact area and interfacial shear modulus. The same relationship emerges from simulations with simple friction models, where the atomic layer-substrate interaction controls the shear stiffness and therefore the resulting friction dissipation.
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Affiliation(s)
- Martin Rejhon
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, USA
| | - Francesco Lavini
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, USA
| | - Ali Khosravi
- International School for Advanced Studies (SISSA), Trieste, Italy
- The Abdus Salam International Centre for Theoretical Physics (ICTP), Trieste, Italy
- Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche (CNR), Trieste, Italy
| | - Mykhailo Shestopalov
- Faculty of Mathematics and Physics, Institute of Physics, Charles University, Prague, Czech Republic
| | - Jan Kunc
- Faculty of Mathematics and Physics, Institute of Physics, Charles University, Prague, Czech Republic
| | - Erio Tosatti
- International School for Advanced Studies (SISSA), Trieste, Italy
- The Abdus Salam International Centre for Theoretical Physics (ICTP), Trieste, Italy
- Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche (CNR), Trieste, Italy
| | - Elisa Riedo
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, USA.
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15
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Takazawa K. Development of Microscopy Apparatus Switchable between Fluorescence and Ultralow-Frequency Raman Modes. J Anal Methods Chem 2022; 2022:2694545. [PMID: 36248057 PMCID: PMC9553702 DOI: 10.1155/2022/2694545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2022] [Accepted: 09/09/2022] [Indexed: 06/16/2023]
Abstract
In this study, a microscopy apparatus that can switch between the fluorescence microscopy and ultralow-frequency Raman microscopy modes was developed. The apparatus can be easily constructed by equipping a standard epi-illumination microscope with an additional port featuring a removable half mirror. Owing to the switchability, fluorescence imaging, and spectroscopy, Raman spectroscopy in the frequency range down to ∼10 cm-1 can be performed using the apparatus. To demonstrate the advantageous features of this apparatus, micron-sized crystals of perylene, which have two polymorphic forms, were analyzed. The two polymorphs were clearly identified based on their shapes, fluorescence spectra, and ultralow-frequency Raman spectra, all of which can be observed with our apparatus alone. These results indicate that the apparatus is a powerful tool for the analysis and characterization of various nano-/micron-sized crystals.
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Affiliation(s)
- Ken Takazawa
- National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan
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16
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Marabotti P, Tommasini M, Castiglioni C, Serafini P, Peggiani S, Tortora M, Rossi B, Li Bassi A, Russo V, Casari CS. Electron-phonon coupling and vibrational properties of size-selected linear carbon chains by resonance Raman scattering. Nat Commun 2022; 13:5052. [PMID: 36030293 PMCID: PMC9420137 DOI: 10.1038/s41467-022-32801-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 08/16/2022] [Indexed: 11/09/2022] Open
Abstract
UV resonance Raman spectroscopy of size-selected linear sp-carbon chains unveils vibrational overtones and combinations up to the fifth order. Thanks to the tunability of the synchrotron source, we excited each H-terminated polyyne (HCnH with n = 8,10,12) to the maxima of its vibronic absorption spectrum allowing us to precisely determine the electronic and vibrational structure of the ground and excited states for the main observed vibrational mode. Selected transitions are shown to enhance specific overtone orders in the Raman spectrum in a specific way that can be explained by a simple analytical model based on Albrecht's theory of resonance Raman scattering. The determined Huang-Rhys factors indicate a strong and size-dependent electron-phonon coupling increasing with the sp-carbon chain length.
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Affiliation(s)
- P Marabotti
- Micro and Nanostructured Materials Laboratory-NanoLab, Department of Energy, Politecnico di Milano via Ponzio 34/3, I-20133, Milano, Italy
| | - M Tommasini
- Department of Chemistry, Materials and Chem. Eng. 'G. Natta', Politecnico di Milano Piazza Leonardo da Vinci 32, I-20133, Milano, Italy
| | - C Castiglioni
- Department of Chemistry, Materials and Chem. Eng. 'G. Natta', Politecnico di Milano Piazza Leonardo da Vinci 32, I-20133, Milano, Italy
| | - P Serafini
- Micro and Nanostructured Materials Laboratory-NanoLab, Department of Energy, Politecnico di Milano via Ponzio 34/3, I-20133, Milano, Italy
| | - S Peggiani
- Micro and Nanostructured Materials Laboratory-NanoLab, Department of Energy, Politecnico di Milano via Ponzio 34/3, I-20133, Milano, Italy
| | - M Tortora
- Elettra Sincrotrone Trieste, S.S. 114 km 163.5, Basovizza, 34149, Trieste, Italy
| | - B Rossi
- Elettra Sincrotrone Trieste, S.S. 114 km 163.5, Basovizza, 34149, Trieste, Italy
| | - A Li Bassi
- Micro and Nanostructured Materials Laboratory-NanoLab, Department of Energy, Politecnico di Milano via Ponzio 34/3, I-20133, Milano, Italy
| | - V Russo
- Micro and Nanostructured Materials Laboratory-NanoLab, Department of Energy, Politecnico di Milano via Ponzio 34/3, I-20133, Milano, Italy
| | - C S Casari
- Micro and Nanostructured Materials Laboratory-NanoLab, Department of Energy, Politecnico di Milano via Ponzio 34/3, I-20133, Milano, Italy.
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17
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Pogăcean F, Varodi C, Măgeruşan L, Stefan-van Staden RI, Pruneanu S. Highly Sensitive Electrochemical Detection of Azithromycin with Graphene-Modified Electrode. Sensors (Basel) 2022; 22:6181. [PMID: 36015941 PMCID: PMC9413463 DOI: 10.3390/s22166181] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/13/2022] [Revised: 08/02/2022] [Accepted: 08/12/2022] [Indexed: 06/15/2023]
Abstract
An electrochemical cell containing two graphite rods was filled with the appropriate electrolyte (0.2 M ammonia + 0.2 M ammonium sulphate) and connected to the exfoliation system to synthesize graphene (EGr). A bias of 7 V was applied between the anode and cathode for 3 h. After synthesis, the morphology and structure of the sample was characterized by SEM, XRD, and FTIR techniques. The material was deposited onto the surface of a glassy carbon (GC) electrode (EGr/GC) and employed for the electrochemical detection of azithromycin (AZT). The DPV signals recorded in pH 5 acetate containing 6 × 10-5 M AZT revealed significant differences between the GC and EGr/GC electrodes. For EGr/GC, the oxidation peak was higher and appeared at lower potential (+1.12 V) compared with that of bare GC (+1.35 V). The linear range for AZT obtained with the EGr/GC electrode was very wide, 10-8-10-5 M, the sensitivity was 0.68 A/M, and the detection limit was 3.03 × 10-9 M. It is important to mention that the sensitivity of EGr/GC was three times higher than that of bare GC (0.23 A/M), proving the advantages of using graphene-modified electrodes in the electrochemical detection of AZT.
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Affiliation(s)
- Florina Pogăcean
- National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103, Donat Street, 400293 Cluj-Napoca, Romania
| | - Codruţa Varodi
- National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103, Donat Street, 400293 Cluj-Napoca, Romania
| | - Lidia Măgeruşan
- National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103, Donat Street, 400293 Cluj-Napoca, Romania
| | - Raluca-Ioana Stefan-van Staden
- Laboratory of Electrochemistry and PATLAB, National Institute of Research for Electrochemistry and Condensed Matter, 202 Splaiul Independentei Str., 060021 Bucharest, Romania
- Faculty of Applied Chemistry and Material Science, Politehnica University of Bucharest, 060042 Bucharest, Romania
| | - Stela Pruneanu
- National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103, Donat Street, 400293 Cluj-Napoca, Romania
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18
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Abstract
Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, School of Engineering, The Australian National University, Acton, ACT 2601, Australia.
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19
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Chiodini S, Kerfoot J, Venturi G, Mignuzzi S, Alexeev EM, Teixeira Rosa B, Tongay S, Taniguchi T, Watanabe K, Ferrari AC, Ambrosio A. Moiré Modulation of Van Der Waals Potential in Twisted Hexagonal Boron Nitride. ACS Nano 2022; 16:7589-7604. [PMID: 35486712 PMCID: PMC9134503 DOI: 10.1021/acsnano.1c11107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
When a twist angle is applied between two layered materials (LMs), the registry of the layers and the associated change in their functional properties are spatially modulated, and a moiré superlattice arises. Several works explored the optical, electric, and electromechanical moiré-dependent properties of such twisted LMs but, to the best of our knowledge, no direct visualization and quantification of van der Waals (vdW) interlayer interactions has been presented, so far. Here, we use tapping mode atomic force microscopy phase-imaging to probe the spatial modulation of the vdW potential in twisted hexagonal boron nitride. We find a moiré superlattice in the phase channel only when noncontact (long-range) forces are probed, revealing the modulation of the vdW potential at the sample surface, following AB and BA stacking domains. The creation of scalable electrostatic domains, modulating the vdW potential at the interface with the environment by means of layer twisting, could be used for local adhesion engineering and surface functionalization by affecting the deposition of molecules or nanoparticles.
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Affiliation(s)
- Stefano Chiodini
- Center
for Nano Science and Technology, Fondazione
Istituto Italiano di Tecnologia, Via G. Pascoli 70, Milan 20133, Italy
| | - James Kerfoot
- Cambridge
Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Giacomo Venturi
- Center
for Nano Science and Technology, Fondazione
Istituto Italiano di Tecnologia, Via G. Pascoli 70, Milan 20133, Italy
- Physics
Department, Politecnico Milano, P.zza Leonardo Da Vinci 32, Milan 20133, Italy
| | - Sandro Mignuzzi
- Cambridge
Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Evgeny M. Alexeev
- Cambridge
Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Bárbara Teixeira Rosa
- Cambridge
Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Sefaattin Tongay
- School
for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Antonio Ambrosio
- Center
for Nano Science and Technology, Fondazione
Istituto Italiano di Tecnologia, Via G. Pascoli 70, Milan 20133, Italy
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20
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Tan C, Adinehloo D, Hone J, Perebeinos V. Phonon-Limited Mobility in h-BN Encapsulated AB-Stacked Bilayer Graphene. Phys Rev Lett 2022; 128:206602. [PMID: 35657858 DOI: 10.1103/physrevlett.128.206602] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 04/14/2022] [Indexed: 06/15/2023]
Abstract
The weak acoustic phonon scattering in graphene monolayer leads to high mobilities even at room temperatures. We identify the dominant role of the shear phonon mode scattering on the carrier mobility in AB-stacked graphene bilayer, which is absent in monolayer graphene. Using a microscopic tight-binding model, we reproduce experimental temperature dependence of mobilities in high-quality boron nitride encapsulated bilayer samples at temperatures up to ∼200 K. At elevated temperatures, the surface polar phonon scattering from boron nitride substrate contributes significantly to the measured mobilities of 15 000 to 20000 cm^{2}/Vs at room temperature and carrier concentration n∼10^{12} cm^{-2}. A screened surface polar phonon potential for a dual-encapsulated bilayer and transferable tight-binding model allows us to predict mobility scaling with temperature and band gap for both electrons and holes in agreement with the experiment.
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Affiliation(s)
- Cheng Tan
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Davoud Adinehloo
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Vasili Perebeinos
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, USA
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21
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He W, Wetherington MT, Ulman KA, Gray JL, Robinson JA, Quek SY. Shear Modes in a 2D Polar Metal. J Phys Chem Lett 2022; 13:4015-4020. [PMID: 35485838 DOI: 10.1021/acs.jpclett.2c00719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Low-frequency shear and breathing modes are important Raman signatures of two-dimensional (2D) materials, providing information on the number of layers and insights into interlayer interactions. We elucidate the nature of low-frequency modes in a 2D polar metal-2D Ga covalently bonded to a SiC substrate, using a first-principles Green's function-based approach. The low-frequency Raman modes are dominated by surface resonance modes, consisting primarily of out-of-phase shear modes in Ga, coupled to SiC phonons. Breathing modes are strongly coupled to the substrate and do not give rise to peaks in the phonon spectra. The highest-frequency shear mode blue-shifts significantly with increasing thickness, reflecting both an increase in the number of Ga layers and an increase in the effective interlayer force constant. The surface resonance modes evolve into localized 2D Ga modes as the phonon momentum increases. The predicted low-frequency modes are consistent with Raman measurements on 2D polar Ga.
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Affiliation(s)
- Wen He
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive, Singapore 117575
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
| | - Maxwell T Wetherington
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kanchan Ajit Ulman
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
| | - Jennifer L Gray
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Su Ying Quek
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive, Singapore 117575
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
- Department of Physics, National University of Singapore, Singapore 117551
- NUS Graduate School Integrative Sciences and Engineering Programme, National University of Singapore, Singapore 117456
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22
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Abstract
The two-dimensional layered semiconductor InSe, with its high carrier mobility, chemical stability, and strong charge transfer ability, plays a crucial role in optoelectronic devices. The number of InSe layers (L) has an important influence on its band structure and optoelectronic properties. Herein we present systematic investigations on few-layer (1L-7L) γ-InSe by optical contrast and Raman spectroscopy. We propose three quantified formulas to quickly identify the layer number using optical contrast, the frequency difference of two A1 modes, and ultralow-frequency Raman spectroscopy, respectively. Moreover, angle-resolved polarization Raman spectra show that γ-InSe is isotropic in the a-b plane. Furthermore, using Raman mapping, we find that the relative strength of the low-frequency interlayer shear modes is particularly sensitive to the interaction between the sample and the substrate.
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Affiliation(s)
- Yu-Jia Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Si-Min Pang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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23
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Chen X, Zhou Q, Wang J, Chen Q. Formation of Graphene Nanoscrolls and Their Electronic Structures Based on Ab Initio Calculations. J Phys Chem Lett 2022; 13:2500-2506. [PMID: 35274956 DOI: 10.1021/acs.jpclett.2c00387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Rolling up two-dimensional (2D) materials can form quasi-one-dimensional nanoscrolls, which are expected to have novel properties due to their larger space of structural parameters. In this Letter, the structural dependence of formation energy was investigated based on more than 90 different graphene nanoscrolls (GNSs) through ab initio calculations. A quantified relationship between formation energy and structural parameters is discovered, which could provide universal description of rolling up 2D materials beyond graphene. Further calculations on electronic structures show the opening of bandgap in GNSs with ultrahigh carrier mobilities up to 107 cm2 V-1 s-1. The structural stability under room temperature was also testified by using molecular dynamic simulations. This work provides general insights into the rolling-up strategy and demonstrates the tunable properties of GNSs, thus extending the scope of the research field for 2D materials.
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Affiliation(s)
- Xinyu Chen
- School of Physics, Southeast University, Nanjing 211189, China
| | - Qionghua Zhou
- School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Qian Chen
- School of Physics, Southeast University, Nanjing 211189, China
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24
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Zhang W, Craddock TJ, Li Y, Swartzlander M, Alfano RR, Shi L. Fano resonance line shapes in the Raman spectra of tubulin and microtubules reveal quantum effects. Biophys Rep (N Y) 2022; 2:100043. [PMID: 36425084 PMCID: PMC9680776 DOI: 10.1016/j.bpr.2021.100043] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Accepted: 12/30/2021] [Indexed: 04/29/2023]
Abstract
Microtubules are self-assembling biological nanotubes made of the protein tubulin that are essential for cell motility, cell architecture, cell division, and intracellular trafficking. They demonstrate unique mechanical properties of high resilience and stiffness due to their quasi-crystalline helical structure. It has been theorized that this hollow molecular nanostructure may function like a quantum wire where optical transitions can take place, and photoinduced changes in microtubule architecture may be mediated via changes in disulfide or peptide bonds or stimulated by photoexcitation of tryptophan, tyrosine, or phenylalanine groups, resulting in subtle protein structural changes owing to alterations in aromatic flexibility. Here, we measured the Raman spectra of a microtubule and its constituent protein tubulin both in dry powdered form and in aqueous solution to determine if molecular bond vibrations show potential Fano resonances, which are indicative of quantum coupling between discrete phonon vibrational states and continuous excitonic many-body spectra. The key findings of this work are that we observed the Raman spectra of tubulin and microtubules and found line shapes characteristic of Fano resonances attributed to aromatic amino acids and disulfide bonds.
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Affiliation(s)
- Wenxu Zhang
- Department of Bioengineering
- Materials Science and Engineering Program, University of California San Diego, La Jolla, CA, USA
| | - Travis J.A. Craddock
- Clinical Systems Biology Group, Institute for Neuro-Immune Medicine
- Departments of Psychology & Neuroscience, Computer Science, and Clinical Immunology, Nova Southeastern University, Fort Lauderdale, FL, USA
| | | | | | - Robert R. Alfano
- Institute for Ultrafast Spectroscopy and Lasers, Department of Physics, The City College of the City University of New York, New York, NY, USA
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25
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Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. Adv Mater 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
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Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
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26
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Sun Y, Xie L, Ma Z, Qian Z, Liao J, Hussain S, Liu H, Qiu H, Wu J, Hu Z. High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction. Nanomaterials 2022; 12:371. [PMID: 35159716 PMCID: PMC8840698 DOI: 10.3390/nano12030371] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/18/2022] [Accepted: 01/21/2022] [Indexed: 02/06/2023]
Abstract
Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.
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27
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Wang X, Cao J, Li H, Lu Z, Cohen A, Haldar A, Kitadai H, Tan Q, Burch KS, Smirnov D, Xu W, Sharifzadeh S, Liang L, Ling X. Electronic Raman scattering in the 2D antiferromagnet NiPS 3. Sci Adv 2022; 8:eabl7707. [PMID: 35030029 PMCID: PMC8759744 DOI: 10.1126/sciadv.abl7707] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Accepted: 11/22/2021] [Indexed: 05/26/2023]
Abstract
Correlated-electron systems have long been an important platform for various interesting phenomena and fundamental questions in condensed matter physics. As a pivotal process in these systems, d-d transitions have been suggested as a key factor toward realizing optical spin control in two-dimensional (2D) magnets. However, it remains unclear how d-d excitations behave in quasi-2D systems with strong electronic correlation and spin-charge coupling. Here, we present a systematic electronic Raman spectroscopy investigation on d-d transitions in a 2D antiferromagnet—NiPS3, from bulk to atomically thin samples. Two electronic Raman modes originating from the scattering of incident photons with d electrons in Ni2+ ions are observed at ~1.0 eV. This electronic process persists down to trilayer flakes and exhibits insensitivity to the spin ordering of NiPS3. Our study demonstrates the utility of electronic Raman scattering in investigating the unique electronic structure and its coupling to magnetism in correlated 2D magnets.
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Affiliation(s)
- Xingzhi Wang
- Department of Chemistry, Boston University, Boston, MA 02215, USA
| | - Jun Cao
- Department of Chemistry, Boston University, Boston, MA 02215, USA
| | - Hua Li
- Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Zhengguang Lu
- National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL 32306, USA
| | - Arielle Cohen
- Division of Materials Science and Engineering, Boston University, Boston, MA 02215, USA
| | - Anubhab Haldar
- Division of Materials Science and Engineering, Boston University, Boston, MA 02215, USA
| | - Hikari Kitadai
- Department of Chemistry, Boston University, Boston, MA 02215, USA
| | - Qishuo Tan
- Department of Chemistry, Boston University, Boston, MA 02215, USA
| | - Kenneth S. Burch
- Department of Physics, Boston College, Chestnut Hill, MA 02467, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
| | - Weigao Xu
- Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Sahar Sharifzadeh
- Department of Chemistry, Boston University, Boston, MA 02215, USA
- Division of Materials Science and Engineering, Boston University, Boston, MA 02215, USA
- Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, USA
- Department of Physics, Boston University, Boston, MA 02215, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Xi Ling
- Department of Chemistry, Boston University, Boston, MA 02215, USA
- Division of Materials Science and Engineering, Boston University, Boston, MA 02215, USA
- The Photonics Center, Boston University, Boston, MA 02215, USA
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28
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Kondo T, Inagaki M, Motobayashi K, Ikeda K. In situ mass analysis of surface reactions using surface-enhanced Raman spectroscopy covering a wide range of frequencies. Catal Sci Technol 2022. [DOI: 10.1039/d2cy00229a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Both the structural change and mass change of adsorbates in heterogeneous surface reactions were simultaneously measured in situ using frequency-extended SERS spectroscopy.
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Affiliation(s)
- Toshiki Kondo
- Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
| | - Motoharu Inagaki
- Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
| | - Kenta Motobayashi
- Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
| | - Katsuyoshi Ikeda
- Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
- Frontier Research Institute of Materials Science (FRIMS), Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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29
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Chen X, Fan K, Liu Y, Li Y, Liu X, Feng W, Wang X. Recent Advances in Fluorinated Graphene from Synthesis to Applications: Critical Review on Functional Chemistry and Structure Engineering. Adv Mater 2022; 34:e2101665. [PMID: 34658081 DOI: 10.1002/adma.202101665] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2021] [Revised: 05/27/2021] [Indexed: 05/11/2023]
Abstract
Fluorinated graphene (FG), as an emerging member of the graphene derivatives family, has attracted wide attention on account of its excellent performances and underlying applications. The introduction of a fluorine atom, with the strongest electronegativity (3.98), greatly changes the electron distribution of graphene, resulting in a series of unique variations in optical, electronic, magnetic, interfacial properties and so on. Herein, recent advances in the study of FG from synthesis to applications are introduced, and the relationship between its structure and properties is summarized in detail. Especially, the functional chemistry of FG has been thoroughly analyzed in recent years, which has opened a universal route for the functionalization and even multifunctionalization of FG toward various graphene derivatives, which further broadens its applications. Moreover, from a particular angle, the structure engineering of FG such as the distribution pattern of fluorine atoms and the regulation of interlayer structure when advanced nanotechnology gets involved is summarized. Notably, the elaborated structure engineering of FG is the key factor to optimize the corresponding properties for potential applications, and is also an up-to-date research hotspot and future development direction. Finally, perspectives and prospects for the problems and challenges in the study of FG are put forward.
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Affiliation(s)
- Xinyu Chen
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Kun Fan
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yu Li
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xiangyang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Wei Feng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xu Wang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
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30
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Sinko A, Solyankin P, Kargovsky A, Manomenova V, Rudneva E, Kozlova N, Sorokina N, Minakov F, Kuznetsov S, Nikolaev N, Surovtsev N, Ozheredov I, Voloshin A, Shkurinov A. A monoclinic semiorganic molecular crystal GUHP for terahertz photonics and optoelectronics. Sci Rep 2021; 11:23433. [PMID: 34873239 DOI: 10.1038/s41598-021-02862-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2021] [Accepted: 11/24/2021] [Indexed: 11/15/2022] Open
Abstract
In this paper we describe the properties of the crystal of guanylurea hydrogen phosphite (NH\documentclass[12pt]{minimal}
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\begin{document}$$_3$$\end{document}3 (GUHP) and propose its application in terahertz photonics and optoelectronics. GUHP crystal has a wide window of transparency and a high optical threshold in the visible and NIR spectral regions and narrow absorption bands in the terahertz frequency range. The spectral characteristics of absorption and refraction in the THz range were found to be strongly dependent on crystal temperature and orientation. Computer simulations made it possible to link the nature of the resonant response of the medium at THz frequencies with the molecular structure of the crystal, in particular, with intermolecular hydrogen bonds and the layered structure of the lattice. The possibility of application of the crystal under study for the conversion of femtosecond laser radiation from visible an NIR to terahertz range was demonstrated. It was shown that dispersion properties of the crystal allow the generation of narrow band terahertz radiation, whose spectral properties are determined by conditions close to phase matching. The properties of the generated terahertz radiation under various temperatures suggest the possibility of phonon mechanism of enhancement for nonlinear susceptibility of the second order.
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31
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Sun Y, Kirimoto K, Takase T, Eto D, Yoshimura S, Tsuru S. Possible pair-graphene structures govern the thermodynamic properties of arbitrarily stacked few-layer graphene. Sci Rep 2021; 11:23401. [PMID: 34862468 PMCID: PMC8642524 DOI: 10.1038/s41598-021-02995-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Accepted: 11/24/2021] [Indexed: 11/23/2022] Open
Abstract
The thermodynamic properties of few-layer graphene arbitrarily stacked on LiNbO3 crystal were characterized by measuring the parameters of a surface acoustic wave as it passed through the graphene/LiNbO3 interface. The parameters considered included the propagation velocity, frequency, and attenuation. Mono-, bi-, tri-, tetra-, and penta-layer graphene samples were prepared by transferring individual graphene layers onto LiNbO3 crystal surfaces at room temperature. Intra-layer lattice deformation was observed in all five samples. Further inter-layer lattice deformation was confirmed in samples with odd numbers of layers. The inter-layer lattice deformation caused stick-slip friction at the graphene/LiNbO3 interface near the temperature at which the layers were stacked. The thermal expansion coefficient of the deformed few-layer graphene transitioned from positive to negative as the number of layers increased. To explain the experimental results, we proposed a few-layer graphene even-odd layer number stacking order effect. A stable pair-graphene structure formed preferentially in the few-layer graphene. In even-layer graphene, the pair-graphene structure formed directly on the LiNbO3 substrate. Contrasting phenomena were noted with odd-layer graphene. Single-layer graphene was bound to the substrate after the stable pair-graphene structure was formed. The pair-graphene structure affected the stacking order and inter-layer lattice deformation of few-layer graphene substantially.
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Affiliation(s)
- Yong Sun
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan.
| | - Kenta Kirimoto
- Department of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu-City, Fukuoka, 802-0985, Japan
| | - Tsuyoshi Takase
- Department of Humanities, Baiko Gakuin University, 1-1-1 Koyocho, Shimonoseki-City, Yamaguchi, 750-8511, Japan
| | - Daichi Eto
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan
| | - Shohei Yoshimura
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan
| | - Shota Tsuru
- Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu-City, Fukuoka, 804-8550, Japan
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32
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Park TG, Na HR, Chun SH, Cho WB, Lee S, Rotermund F. Coherent control of interlayer vibrations in Bi 2Se 3 van der Waals thin-films. Nanoscale 2021; 13:19264-19273. [PMID: 34787629 DOI: 10.1039/d1nr05075c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Interlayer vibrations with discrete quantized modes in two-dimensional (2D) materials can be excited by ultrafast light due to the inherent low dimensionality and van der Waals force as a restoring force. Controlling such interlayer vibrations in layered materials, which are closely related to fundamental nanomechanical interactions and thermal transport, in spatial- and time-domain provides an in-depth understanding of condensed matters and potential applications for advanced phononic and photonics devices. The manipulation of interlayer vibrational modes has been implemented in a spatial domain through material design to develop novel optoelectronic and phononic devices with various 2D materials, but such control in a time domain is still lacking. We present an all-optical method for controlling the interlayer vibrations in a highly precise manner with Bi2Se3 as a promising optoelectronic and thermoelasticity material in layered structures using a coherently controlled pump and probe scheme. The observed thickness-dependent fast interlayer breathing modes and substrate-induced slow interfacial modes can be exactly explained by a modified linear chain model including coupling effect with substrate. In addition, the results of coherent control experiments also agree with the simulation results based on the interference of interlayer vibrations. This investigation is universally applicable for diverse 2D materials and provides insight into the interlayer vibration-related dynamics and novel device implementation based on an ultrafast timescale interlayer-spacing modulation scheme.
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Affiliation(s)
- Tae Gwan Park
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Hong Ryeol Na
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Korea.
| | - Seung-Hyun Chun
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Korea.
| | - Won Bae Cho
- Welfare & Medical ICT Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea
| | - Sunghun Lee
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Korea.
| | - Fabian Rotermund
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
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Kim S, Kim Y, Kim J, Choi S, Yun K, Kim D, Lim SY, Kim S, Chun SH, Park J, Eom I, Kim KS, Koo TY, Ou Y, Katmis F, Wen H, DiChiara A, Walko DA, Landahl EC, Cheong H, Sim E, Moodera J, Kim H. Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi 2Se 3 by X-ray Free-Electron Laser Diffraction. Nano Lett 2021; 21:8554-8562. [PMID: 34623164 DOI: 10.1021/acs.nanolett.1c01424] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the subpicosecond regime. Here, we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theoretical calculations suggest that the band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast time scales.
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Affiliation(s)
- Sungwon Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Youngsam Kim
- Department of Chemistry, Yonsei University, Seoul 03722, Korea
| | - Jaeseung Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Sungwook Choi
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Kyuseok Yun
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Dongjin Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Sunam Kim
- Pohang Accelerator Laboratory, Pohang 37673, Korea
| | | | - Jaeku Park
- Pohang Accelerator Laboratory, Pohang 37673, Korea
| | - Intae Eom
- Pohang Accelerator Laboratory, Pohang 37673, Korea
| | | | | | - Yunbo Ou
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ferhat Katmis
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Haidan Wen
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Anthony DiChiara
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Donald A Walko
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Eric C Landahl
- Department of Physics, DePaul University, Chicago, Illinois 60614, United States
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Eunji Sim
- Department of Chemistry, Yonsei University, Seoul 03722, Korea
| | - Jagadeesh Moodera
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hyunjung Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
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Abstract
A unique feature of two-dimensional (2D) materials is the ultralow friction at their van der Waals interfaces. A key question in a new generation of 2D heterostructure-based nanoelectromechanical systems (NEMS) is how the low friction interfaces will affect the dynamic performance. Here, we apply the exquisite sensitivity of graphene nanoelectromechanical drumhead resonators to compare the dissipation from monolayer, Bernal-stacked bilayer, and twisted bilayer graphene membranes. We find a significant difference in the average quality factors of three resonator types: 53 for monolayer, 40 for twisted and 31 for Bernal-stacked membranes. We model this difference as a combination of change in stiffness and additional dissipation from interlayer friction during motion. We find even the lowest frictions measured on sliding 2D interfaces are sufficient to alter dissipation in 2D NEMS. This model provides a generalized approach to quantify dissipation in NEMS based on 2D heterostructures which incorporate interlayer slip and friction.
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Affiliation(s)
- Paolo F Ferrari
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - SunPhil Kim
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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35
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Zhang X, Su G, Lu J, Yang W, Zhuang W, Han K, Wang X, Wan Y, Yu X, Yang P. Centimeter-Scale Few-Layer PdS 2: Fabrication and Physical Properties. ACS Appl Mater Interfaces 2021; 13:43063-43074. [PMID: 34473488 DOI: 10.1021/acsami.1c11824] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2 has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2 by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2 were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12-300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2 materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2 V-1 s-1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2 was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.
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Affiliation(s)
- Xudong Zhang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Guowen Su
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Jiangwei Lu
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Wangfan Yang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Wenbo Zhuang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Kai Han
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Xiao Wang
- Faculty of Materials Science & Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China
| | - Yanfen Wan
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| | - Xiaohua Yu
- Faculty of Materials Science & Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China
| | - Peng Yang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
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36
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Loidl A, Lunkenheimer P, Tsurkan V. On the proximate Kitaev quantum-spin liquid α-RuCl 3: thermodynamics, excitations and continua. J Phys Condens Matter 2021; 33:443004. [PMID: 34371492 DOI: 10.1088/1361-648x/ac1bcf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Accepted: 08/09/2021] [Indexed: 06/13/2023]
Abstract
This topical review provides an overview over recent thermodynamic, infrared, and THz results on the proximate Kitaev spin-liquid. Quantum-spin liquids are exotic phases characterized by the absence of magnetic ordering even at the lowest temperatures and by the occurrence of fractionalized spin excitations. Among those, Kitaev spin liquids are most fascinating as they belong to the rare class of model systems, that can be solved analytically by decomposing localized spinsS= 1/2 into Majorana fermions. The main aim of this review is to summarize experimental evidence obtained by THz spectroscopy and utilizing heat-capacity experiments, which point to the existence of fractionalized excitations in the spin-liquid state, which in α-RuCl3exists at temperatures just above the onset of magnetic order or at in-plane magnetic fields just beyond the quantum-critical point where antiferromagnetic order becomes suppressed. Thermodynamic and spectroscopic results are compared to theoretical predictions and model calculations. In addition, we document recent progress in elucidating the sub-gap (<1 eV) electronic structure of the 4d5ruthenium electrons to characterize their local electronic configuration. The on-site excitation spectra of thedelectrons below the optical gap can be consistently explained using a spin-orbit coupling constant of ∼170 meV and the concept of multiple spin-orbital excitations. Furthermore, we discuss the phonon spectra of the title compound including rigid-plane shear and compression modes of the single molecular layers. In recent theoretical concepts it has been shown that phonons can couple to Majorana fermions and may play a substantial role in establishing the half-integer thermal quantum Hall effect observed in this material.
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Affiliation(s)
- A Loidl
- Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, 86159 Augsburg, Germany
| | - P Lunkenheimer
- Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, 86159 Augsburg, Germany
| | - V Tsurkan
- Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, 86159 Augsburg, Germany
- Institute of Applied Physics, Chisinau MD-2028, Moldova
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37
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Pizzi G, Milana S, Ferrari AC, Marzari N, Gibertini M. Shear and Breathing Modes of Layered Materials. ACS Nano 2021; 15:12509-12534. [PMID: 34370440 PMCID: PMC8397437 DOI: 10.1021/acsnano.0c10672] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Accepted: 06/14/2021] [Indexed: 05/19/2023]
Abstract
Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the center of an ever-increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive approaches to determine a wide range of properties, including the number of layers, N, and the strength of the interlayer interactions. We present a general approach to predict the complete spectroscopic fan diagrams, i.e., the relations between frequencies and N for the optically active shear and layer-breathing modes of any multilayer comprising N ≥ 2 identical layers. In order to achieve this, we combine a description of the normal modes in terms of a one-dimensional mechanical model, with symmetry arguments that describe the evolution of the point group as a function of N. Group theory is then used to identify which modes are Raman- and/or infrared-active, and to provide diagrams of the optically active modes for any stack composed of identical layers. We implement the method and algorithms in an open-source tool to assist researchers in the prediction and interpretation of such diagrams. Our work will underpin future efforts on Raman and infrared characterization of known, and yet not investigated, LMs.
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Affiliation(s)
- Giovanni Pizzi
- Theory
and Simulation of Materials (THEOS), and National Centre for Computational
Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- E-mail:
| | - Silvia Milana
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 OFA, U.K.
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 OFA, U.K.
- E-mail:
| | - Nicola Marzari
- Theory
and Simulation of Materials (THEOS), and National Centre for Computational
Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Marco Gibertini
- Theory
and Simulation of Materials (THEOS), and National Centre for Computational
Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- Dipartimento
di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, IT-41125 Modena, Italy
- Department
of Quantum Matter Physics, University of
Geneva, CH-1211 Genéve, Switzerland
- E-mail:
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38
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Quan J, Linhart L, Lin ML, Lee D, Zhu J, Wang CY, Hsu WT, Choi J, Embley J, Young C, Taniguchi T, Watanabe K, Shih CK, Lai K, MacDonald AH, Tan PH, Libisch F, Li X. Phonon renormalization in reconstructed MoS 2 moiré superlattices. Nat Mater 2021; 20:1100-1105. [PMID: 33753933 DOI: 10.1038/s41563-021-00960-1] [Citation(s) in RCA: 56] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2020] [Accepted: 02/16/2021] [Indexed: 05/25/2023]
Abstract
In moiré crystals formed by stacking van der Waals materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS2 twisted bilayers, adding an insight to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly owing to ultra-strong coupling between different phonon modes and atomic reconstructions of the moiré pattern. We develop a low-energy continuum model for phonons that overcomes the outstanding challenge of calculating the properties of large moiré supercells and successfully captures the essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moiré crystals with nanometre-size supercells. The model promotes a comprehensive and unified understanding of the structural, optical and electronic properties of moiré superlattices.
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Affiliation(s)
- Jiamin Quan
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Lukas Linhart
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
- Institute for Theoretical Physics, Vienna University of Technology, Vienna, Austria
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
| | - Daehun Lee
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Jihang Zhu
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Chun-Yuan Wang
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Wei-Ting Hsu
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Junho Choi
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Jacob Embley
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Carter Young
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | | | | | - Chih-Kang Shih
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Keji Lai
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Allan H MacDonald
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
| | - Florian Libisch
- Institute for Theoretical Physics, Vienna University of Technology, Vienna, Austria.
| | - Xiaoqin Li
- Department of Physics, The University of Texas at Austin, Austin, TX, USA.
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39
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Lin KQ, Holler J, Bauer JM, Parzefall P, Scheuck M, Peng B, Korn T, Bange S, Lupton JM, Schüller C. Large-Scale Mapping of Moiré Superlattices by Hyperspectral Raman Imaging. Adv Mater 2021; 33:e2008333. [PMID: 34242447 DOI: 10.1002/adma.202008333] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 05/03/2021] [Indexed: 05/25/2023]
Abstract
Moiré superlattices can induce correlated-electronic phases in twisted van der Waals materials: strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moiré superlattices produced through artificial stacking can be quite inhomogeneous, which hampers the development of a clear correlation between the moiré period and the emerging electrical and optical properties. Here, it is demonstrated in twisted-bilayer transition-metal dichalcogenides that low-frequency Raman scattering can be utilized not only to detect atomic reconstruction, but also to map out the inhomogeneity of the moiré lattice over large areas. The method is established based on the finding that both the interlayer-breathing mode and moiré phonons are highly susceptible to the moiré period and provide characteristic fingerprints. Hyperspectral Raman imaging visualizes microscopic domains of a 5° twisted-bilayer sample with an effective twist-angle resolution of about 0.1°. This ambient methodology can be conveniently implemented to characterize and preselect high-quality areas of samples for subsequent device fabrication, and for transport and optical experiments.
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Affiliation(s)
- Kai-Qiang Lin
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - Johannes Holler
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - Jonas M Bauer
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - Philipp Parzefall
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - Marten Scheuck
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - Bo Peng
- TCM Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Tobias Korn
- Institute of Physics, University of Rostock, 18059, Rostock, Germany
| | - Sebastian Bange
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - John M Lupton
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
| | - Christian Schüller
- Department of Physics, University of Regensburg, 93053, Regensburg, Germany
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40
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Abstract
Three-dimensional (3D) aggregation of graphene is dramatically weak and brittle due primarily to the prevailing interlayer van der Waals interaction. In this report, motivated by the recent success in synthesis of monolayer amorphous carbon (MAC) sheets, we demonstrate that outstanding strength and large plastic-like strain can be achieved in layered 3D MAC composites. Both surface roughening and the ultracompliant nature of MACs count for the high strength and gradual failure in 3D MAC. Such properties are not seen when intact graphene or multiple stacked MACs are used as building blocks for 3D composites. This work demonstrates a counterintuitive mechanism that surface roughening due to initial defects and low rigidity may help to realize superb mechanical properties in 3D aggregation of monolayer carbon.
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Affiliation(s)
- Wenhui Xie
- LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yujie Wei
- LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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41
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Mao N, Lin Y, Bie YQ, Palacios T, Liang L, Saito R, Ling X, Kong J, Tisdale WA. Resonance-Enhanced Excitation of Interlayer Vibrations in Atomically Thin Black Phosphorus. Nano Lett 2021; 21:4809-4815. [PMID: 34048260 DOI: 10.1021/acs.nanolett.1c00917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The strength of interlayer coupling critically affects the physical properties of 2D materials such as black phosphorus (BP), where the electronic structure depends sensitively on layer thickness. Rigid-layer vibrations reflect directly the interlayer coupling strength in 2D van der Waals solids, but measurement of these characteristic frequencies is made difficult by sample instability and small Raman scattering cross sections in atomically thin elemental crystals. Here, we overcome these challenges in BP by performing resonance-enhanced low-frequency Raman scattering under an argon-protective environment. Interlayer breathing modes for atomically thin BP were previously unobservable under conventional (nonresonant) excitation but became strongly enhanced when the excitation energy matched the sub-band electronic transitions of few-layer BP, down to bilayer thicknesses. The measured out-of-plane interlayer force constant was found to be 10.1 × 1019 N/m3 in BP, which is comparable to graphene. Accurate characterization of the interlayer coupling strength lays the foundation for future exploration of BP twisted structures and heterostructures.
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Affiliation(s)
- Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Chemistry and Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
| | - Yuxuan Lin
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ya-Qing Bie
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Riichiro Saito
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
| | - Xi Ling
- Department of Chemistry and Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
- The Photonics Center, Boston University, Boston, Massachusetts 02215, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - William A Tisdale
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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42
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Leng YC, Lin ML, Zhou Y, Wu JB, Meng D, Cong X, Li H, Tan PH. Intrinsic effect of interfacial coupling on the high-frequency intralayer modes in twisted multilayer MoTe 2. Nanoscale 2021; 13:9732-9739. [PMID: 34019059 DOI: 10.1039/d1nr01309b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The interfacial coupling at the interface makes the van der Waals heterostructures (vdWHs) exhibit many unique properties that cannot be realized in its constituents. Such a study usually starts with a twisted stack of two flakes exfoliated from the same layered materials to form twisted multilayers, in which the impact of interfacial coupling on the low-frequency interlayer modes had been well understood. However, it is not clear how interfacial coupling affects the high-frequency intralayer modes of twisted multilayers. Herein, we perform high-resolution resonance Raman spectroscopy of the high-frequency intralayer modes in twisted multilayer MoTe2 (tMLM). All the Davydov entities of the out-of-plane intralayer mode are observed and distinguished at 4 K. It is found that the out-of-plane intralayer modes in tMLM are sensitive to its interfacial layer-breathing coupling so that the out-of-plane intralayer modes in tMLM do not show a direct relationship with those of the two constituents. However, the case is quite different for the in-plane intralayer modes in tMLM, whose spectral profile can be fitted by those of the corresponding modes of its constituents. This indicates that the in-plane intralayer modes are localized within the constituents in tMLM because of its negligible interfacial shear coupling at the interface. All the results can be well understood using the vdW model in which only the nearest neighbor interlayer/interfacial interaction is taken into account. This work directly builds the relationship between the Davydov splitting of the high-frequency intralayer vibrations and the low-frequency interlayer vibrations in tMLM, which can be further extended to other twisted materials and the related vdWHs.
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Affiliation(s)
- Yu-Chen Leng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
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Wang SY, Chen GX, Guo QQ, Huang KX, Zhang XL, Yan XQ, Liu ZB, Tian JG. Layer contribution to optical signals of van der Waals heterostructures. Nanoscale Adv 2021; 3:3114-3123. [PMID: 36133646 PMCID: PMC9417842 DOI: 10.1039/d0na00906g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2020] [Accepted: 04/09/2021] [Indexed: 06/16/2023]
Abstract
The optical signals (such as Raman scattering, absorption, reflection) of van der Waals heterostructures (vdWHs) are very important for structural analysis and the application of optoelectronic devices. However, there is still a lack of research on the effect of each layer of two-dimensional materials on the optical signals of vdWHs. Here, we investigated the contribution from different layers to the optical signal of vdWHs by using angle-resolved polarized Raman spectroscopy (ARPRS) and angle-dependent reflection spectroscopy. A suitable theoretical model for the optical signal of vdWHs generated by different layers was developed, and vdWHs stacked by different two-dimensional (2D) materials were analyzed. The results revealed a strong dependence of the relative strengths of the optical signals of the upper and lower layers on the thicknesses of 2D materials and the SiO2 layer on the Si/SiO2 substrate. Interestingly, on the 285 nm SiO2/Si substrate, the contribution to the optical signal by the underlying 2D material was much greater than that by the upper layer. Furthermore, optical signals originating from different layers of twisted black phosphorus (BP) for different twist angles were studied. There is great significance for optical spectroscopy to study vdWHs, as well as the development of better twisted 2D materials and moiré physics.
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Affiliation(s)
- Su-Yun Wang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
| | - Guo-Xing Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
| | - Qin-Qin Guo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
| | - Kai-Xuan Huang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
| | - Xi-Lin Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
| | - Xiao-Qing Yan
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
- Renewable Energy Conversion and Storage Center, Nankai University Tianjin 300071 China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University Tianjin 300071 China
- Renewable Energy Conversion and Storage Center, Nankai University Tianjin 300071 China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
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Fu Y, Lin ML, Wang L, Liu Q, Huang L, Jiang W, Hao Z, Liu C, Zhang H, Shi X, Zhang J, Dai J, Yu D, Ye F, Lee PA, Tan PH, Mei JW. Dynamic fingerprint of fractionalized excitations in single-crystalline Cu(3)Zn(OH)(6)FBr. Nat Commun 2021; 12:3048. [PMID: 34031422 DOI: 10.1038/s41467-021-23381-9] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2020] [Accepted: 04/06/2021] [Indexed: 02/04/2023] Open
Abstract
Beyond the absence of long-range magnetic orders, the most prominent feature of the elusive quantum spin liquid (QSL) state is the existence of fractionalized spin excitations, i.e., spinons. When the system orders, the spin-wave excitation appears as the bound state of the spinon-antispinon pair. Although scarcely reported, a direct comparison between similar compounds illustrates the evolution from spinon to magnon. Here, we perform the Raman scattering on single crystals of two quantum kagome antiferromagnets, of which one is the kagome QSL candidate Cu3Zn(OH)6FBr, and another is an antiferromagnetically ordered compound EuCu3(OH)6Cl3. In Cu3Zn(OH)6FBr, we identify a unique one spinon-antispinon pair component in the E2g magnetic Raman continuum, providing strong evidence for deconfined spinon excitations. In contrast, a sharp magnon peak emerges from the one-pair spinon continuum in the Eg magnetic Raman response once EuCu3(OH)6Cl3 undergoes the antiferromagnetic order transition. From the comparative Raman studies, we can regard the magnon mode as the spinon-antispinon bound state, and the spinon confinement drives the magnetic ordering.
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Dwivedi N, Ott AK, Sasikumar K, Dou C, Yeo RJ, Narayanan B, Sassi U, Fazio D, Soavi G, Dutta T, Balci O, Shinde S, Zhang J, Katiyar AK, Keatley PS, Srivastava AK, Sankaranarayanan SKRS, Ferrari AC, Bhatia CS. Graphene overcoats for ultra-high storage density magnetic media. Nat Commun 2021; 12:2854. [PMID: 34001870 DOI: 10.1038/s41467-021-22687-y] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2019] [Accepted: 03/17/2021] [Indexed: 02/03/2023] Open
Abstract
Hard disk drives (HDDs) are used as secondary storage in digital electronic devices owing to low cost and large data storage capacity. Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond ~1 Tb/in2. This requires the thickness of carbon overcoats (COCs) to be <2 nm. However, friction, wear, corrosion, and thermal stability are critical concerns below 2 nm, limiting current technology, and restricting COC integration with heat assisted magnetic recording technology (HAMR). Here we show that graphene-based overcoats can overcome all these limitations, and achieve two-fold reduction in friction and provide better corrosion and wear resistance than state-of-the-art COCs, while withstanding HAMR conditions. Thus, we expect that graphene overcoats may enable the development of 4-10 Tb/in2 areal density HDDs when employing suitable recording technologies, such as HAMR and HAMR+bit patterned media.
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He J, Paradisanos I, Liu T, Cadore AR, Liu J, Churaev M, Wang RN, Raja AS, Javerzac-Galy C, Roelli P, Fazio DD, Rosa BLT, Tongay S, Soavi G, Ferrari AC, Kippenberg TJ. Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials. Nano Lett 2021; 21:2709-2718. [PMID: 33754742 DOI: 10.1021/acs.nanolett.0c04149] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.
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Affiliation(s)
- Jijun He
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | | | - Tianyi Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Junqiu Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mikhail Churaev
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Rui Ning Wang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Arslan S Raja
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Clément Javerzac-Galy
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Philippe Roelli
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Domenico De Fazio
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Barbara L T Rosa
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
- Institute for Solid State Physics, Friedrich-Schiller University Jena, 07743 Jena, Germany
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Tobias J Kippenberg
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Polyakov SN, Denisov VN, Denisov VV, Zholudev SI, Lomov AA, Moskalenko VA, Molchanov SP, Martyushov SY, Terentiev SA, Blank VD. Structure Investigations of Islands with Atomic-Scale Boron-Carbon Bilayers in Heavily Boron-Doped Diamond Single Crystal: Origin of Stepwise Tensile Stress. Nanoscale Res Lett 2021; 16:25. [PMID: 33555409 PMCID: PMC7870744 DOI: 10.1186/s11671-021-03484-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2020] [Accepted: 01/18/2021] [Indexed: 06/12/2023]
Abstract
The detailed studies of the surface structure of synthetic boron-doped diamond single crystals using both conventional X-ray and synchrotron nano- and microbeam diffraction, as well as atomic force microscopy and micro-Raman spectroscopy, were carried out to clarify the recently discovered features in them. The arbitrary shaped islands towering above the (111) diamond surface are formed at the final stage of the crystal growth. Their lateral dimensions are from several to tens of microns and their height is from 0.5 to 3 μm. The highly nonequilibrium conditions of crystal growth enhance the boron solubility and, therefore, lead to an increase of the boron concentrations in the islands on the surface up to 1022 cm-3, eventually generating significant stresses in them. The stress in the islands is found to be the volumetric tensile stress. This conclusion is based on the stepwise shift of the diamond Raman peak toward lower frequencies from 1328 to 1300 cm-1 in various islands and on the observation of the shift of three low-intensity reflections at 2-theta Bragg angles of 41.468°, 41.940° and 42.413° in the X-ray diffractogram to the left relative to the (111) diamond reflection at 2theta = 43.93°. We believe that the origin of the stepwise tensile stress is a discrete change in the distances between boron-carbon layers with the step of 6.18 Å. This supposition explains also the stepwise (step of 5 cm-1) behavior of the diamond Raman peak shift. Two approaches based on the combined application of Raman scattering and X-ray diffraction data allowed determination of the values of stresses both in lateral and normal directions. The maximum tensile stress in the direction normal to the surface reaches 63.6 GPa, close to the fracture limit of diamond, equal to 90 GPa along the [111] crystallographic direction. The presented experimental results unambiguously confirm our previously proposed structural model of the boron-doped diamond containing two-dimensional boron-carbon nanosheets and bilayers.
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Affiliation(s)
- S N Polyakov
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840.
- The PN Lebedev Physical Institute, Moscow, Russia, 119991.
- AV Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Moscow, Russia, 119991.
| | - V N Denisov
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840.
- Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow, Russia, 108840.
- Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701.
| | - V V Denisov
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840
| | - S I Zholudev
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840
| | - A A Lomov
- Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 117218
| | - V A Moskalenko
- Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701
| | - S P Molchanov
- AV Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Moscow, Russia, 119991
| | - S Yu Martyushov
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840
| | - S A Terentiev
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840
| | - V D Blank
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia, 108840
- Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701
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Chitumalla RK, Kim K, Gao X, Jang J. A density functional theory study on the underwater adhesion of catechol onto a graphite surface. Phys Chem Chem Phys 2021; 23:1031-1037. [PMID: 33346266 DOI: 10.1039/d0cp05623e] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Mussel foot proteins (MFPs) strongly adhere to both hydrophilic and hydrophobic surfaces under wet conditions. This water-resistant adhesion of MFP is ascribed to catechol (1,2-dihydroxybenzene) which is highly contained in the MFP. Currently, little is known about the molecular details of the underwater adhesion of catechol onto a nonpolar hydrophobic surface. By using the density functional theory, we investigate the adhesion of catechol onto a wet graphite surface. We unveil the molecular geometry and energy in the course of the wet adhesion of catechol. Catechol adheres through π-π stacking with the underlying graphite. The surrounding water molecules further strengthen the adhesion by forming hydrogen bonds with catechol. In addition, a significant charge transfer has been observed from wet graphite to the catechol. Consequently, catechol adheres onto the present hydrophobic surface as strongly as onto a hydrophilic silica surface.
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Affiliation(s)
- Ramesh Kumar Chitumalla
- Department of Nanoenergy Engineering, Pusan National University, Busan 46241, Republic of Korea.
| | - Kiduk Kim
- Department of Nanoenergy Engineering, Pusan National University, Busan 46241, Republic of Korea.
| | - Xingfa Gao
- College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China.
| | - Joonkyung Jang
- Department of Nanoenergy Engineering, Pusan National University, Busan 46241, Republic of Korea.
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49
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Ni K, Du J, Yang J, Xu S, Cong X, Shu N, Zhang K, Wang A, Wang F, Ge L, Zhao J, Qu Y, Novoselov KS, Tan P, Su F, Zhu Y. Stronger Interlayer Interactions Contribute to Faster Hot Carrier Cooling of Bilayer Graphene under Pressure. Phys Rev Lett 2021; 126:027402. [PMID: 33512233 DOI: 10.1103/physrevlett.126.027402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2020] [Revised: 11/04/2020] [Accepted: 12/11/2020] [Indexed: 06/12/2023]
Abstract
We perform femtosecond pump-probe spectroscopy to in situ investigate the ultrafast photocarrier dynamics in bilayer graphene and observe an acceleration of energy relaxation under pressure. In combination with in situ Raman spectroscopy and ab initio molecular dynamics simulations, we reveal that interlayer shear and breathing modes have significant contributions to the faster hot-carrier relaxations by coupling with the in-plane vibration modes under pressure. Our work suggests that further understanding the effect of interlayer interaction on the behaviors of electrons and phonons would be critical to tailor the photocarrier dynamic properties of bilayer graphene.
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Affiliation(s)
- Kun Ni
- Hefei National Research Center for Physical Sciences at the Microscale, and CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, and iChEM, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jinxiang Du
- Hefei National Research Center for Physical Sciences at the Microscale, and CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, and iChEM, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jin Yang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Shujuan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Na Shu
- Hefei National Research Center for Physical Sciences at the Microscale, and CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, and iChEM, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Kai Zhang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Aolei Wang
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and ICQD/Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Fei Wang
- Hefei National Research Center for Physical Sciences at the Microscale, and CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, and iChEM, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Liangbing Ge
- Hefei National Research Center for Physical Sciences at the Microscale, and CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, and iChEM, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jin Zhao
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and ICQD/Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yan Qu
- The Sixth Element (Changzhou) Materials Technology Co., Ltd., Changzhou 213100, China
| | - Kostya S Novoselov
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom, Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore and Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Fuhai Su
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Yanwu Zhu
- Hefei National Research Center for Physical Sciences at the Microscale, and CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, and iChEM, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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50
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Vialla F, Del Fatti N. Time-Domain Investigations of Coherent Phonons in van der Waals Thin Films. Nanomaterials (Basel) 2020; 10:E2543. [PMID: 33348750 PMCID: PMC7766349 DOI: 10.3390/nano10122543] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Revised: 12/11/2020] [Accepted: 12/14/2020] [Indexed: 01/31/2023]
Abstract
Coherent phonons can be launched in materials upon localized pulsed optical excitation, and be subsequently followed in time-domain, with a sub-picosecond resolution, using a time-delayed pulsed probe. This technique yields characterization of mechanical, optical, and electronic properties at the nanoscale, and is taken advantage of for investigations in material science, physics, chemistry, and biology. Here we review the use of this experimental method applied to the emerging field of homo- and heterostructures of van der Waals materials. Their unique structure corresponding to non-covalently stacked atomically thin layers allows for the study of original structural configurations, down to one-atom-thin films free of interface defect. The generation and relaxation of coherent optical phonons, as well as propagative and resonant breathing acoustic phonons, are comprehensively discussed. This approach opens new avenues for the in situ characterization of these novel materials, the observation and modulation of exotic phenomena, and advances in the field of acoustics microscopy.
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Affiliation(s)
- Fabien Vialla
- Institut Lumière Matière UMR 5306, Université Claude Bernard Lyon 1, CNRS, Université de Lyon, F-69622 Villeurbanne, France;
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