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Qing F, Guo X, Hou Y, Ning C, Wang Q, Li X. Toward the Production of Super Graphene. Small 2024:e2310678. [PMID: 38708801 DOI: 10.1002/smll.202310678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 04/10/2024] [Indexed: 05/07/2024]
Abstract
The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.
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Affiliation(s)
- Fangzhu Qing
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
| | - Xiaomeng Guo
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuting Hou
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Congcong Ning
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Qisong Wang
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xuesong Li
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
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2
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Singh J, Astarini NA, Tsai M, Venkatesan M, Kuo C, Yang C, Yen H. Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers. Adv Sci (Weinh) 2024; 11:e2307839. [PMID: 38164110 PMCID: PMC10953574 DOI: 10.1002/advs.202307839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 11/28/2023] [Indexed: 01/03/2024]
Abstract
Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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Affiliation(s)
- Jitendra Singh
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
- Department of PhysicsUdit Narayan Post Graduate College PadraunaKushinagarUttar Pradesh274304India
| | - Nadiya Ayu Astarini
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Meng‐Lin Tsai
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Manikandan Venkatesan
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chi‐Ching Kuo
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chan‐Shan Yang
- Institute and Undergraduate Program of Electro‐Optical EngineeringNational Taiwan Normal UniversityTaipei City11677Taiwan
| | - Hung‐Wei Yen
- Department of Materials Science and EngineeringNational Taiwan UniversityTaipei City106319Taiwan
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3
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Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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4
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Xu M, Dong R, Gong X, Ma L. Mechanism of Controllable Growth of Large-Area Single-Crystal Hexagonal Boron Nitride on Preoxidized Copper Substrate. J Phys Chem Lett 2023; 14:11665-11672. [PMID: 38109335 DOI: 10.1021/acs.jpclett.3c02764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) exhibits promising properties for electronic and photoelectric devices, while the growth of high-quality h-BN remains challenging. Here we theoretically explored the mechanism of epitaxial growth of high-quality h-BN by using the preoxidized and hydrogen-annealed copper substrate, i.e., Cu2O. It is revealed thermodynamically that the unidirectional nucleation of h-BN can be rationalized on the symmetry-matched Cu2O(111) surface rather than the antiparallel nucleation on the Cu(111) surface. Kinetically, the dehydrogenation of feedstock of h-BN on the Cu2O(111) surface is also much easier than that on the Cu(111) surface. Both the B and N atoms are energetically more preferred to stay on the surface rather than inside the body of Cu2O, which leads to a surface-diffusion-based growth behavior on the Cu2O(111) surface instead of the precipitation-diffusion mixed case on the Cu(111) surface. Our work may guide future experimental design for the controllable growth of wafer-scale single-crystal h-BN.
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Affiliation(s)
- Mingxia Xu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Ruikang Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
- School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Xiaoshu Gong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Liang Ma
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
- Suzhou Laboratory, Suzhou 215004, China
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5
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Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X. Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene. Sci Adv 2023; 9:eadf8484. [PMID: 37531436 PMCID: PMC10396303 DOI: 10.1126/sciadv.adf8484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 07/05/2023] [Indexed: 08/04/2023]
Abstract
Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.
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Affiliation(s)
- Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Tao Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Xin Gao
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huaiyuan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Institute for Multidisciplinary Innovation, University of Science and Technology Beijing, Beijing 100083, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yucheng Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zhen Huang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jilin Tang
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhaoying Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Hailin Peng
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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Liu B, Zhang YT, Qiao R, Shi R, Li Y, Guo Q, Li J, Li X, Wang L, Qi J, Du S, Ren X, Liu K, Gao P, Zhang YY. Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures. Phys Rev Lett 2023; 131:016201. [PMID: 37478456 DOI: 10.1103/physrevlett.131.016201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 05/08/2023] [Accepted: 06/02/2023] [Indexed: 07/23/2023]
Abstract
In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected transition behaviors, which may influence the device performance. Here, we study the twist-angle-dependent coupling effects of h-BN/graphene heterostructures using monochromatic electron energy loss spectroscopy. We find that the moiré potentials alter the band structure of graphene, resulting in a redshift of the intralayer transition at the M point, which becomes more pronounced up to 0.22 eV with increasing twist angle. Furthermore, the twisting of the Brillouin zone of h-BN relative to the graphene M point leads to tunable vertical transition energies in the range of 5.1-5.6 eV. Our findings indicate that twist-coupling effects of van der Waals heterostructures should be carefully considered in device fabrications, and the continuously tunable interband transitions through the twist angle can serve as a new degree of freedom to design optoelectrical devices.
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Affiliation(s)
- Bingyao Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yu-Tian Zhang
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Ruixi Qiao
- Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Ruochen Shi
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yuehui Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jiade Li
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaomei Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Li Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Shixuan Du
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinguo Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yu-Yang Zhang
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
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Li Y, Zhao Y, Wang X, Liu W, He J, Luo X, Liu J, Liu Y. Precise Construction and Growth of Submillimeter Two-Dimensional WSe 2 and MoSe 2 Monolayers. Materials (Basel) 2023; 16:4795. [PMID: 37445110 DOI: 10.3390/ma16134795] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 06/26/2023] [Accepted: 07/01/2023] [Indexed: 07/15/2023]
Abstract
Currently, as shown by large-scale research on two-dimensional materials in the field of nanoelectronics and catalysis, the construction of large-area two-dimensional materials is crucial for the development of devices and their application in photovoltaics, sensing, optoelectronics, and energy generation/storage. Here, using atmospheric-pressure chemical vapor deposition, we developed a method to regulate growth conditions according to the growth mechanism for WSe2 and MoSe2 materials. By accurately controlling the hydrogen flux within the range of 1 sccm and the distance between the precursor and the substrate, we obtained large-size films of single atomic layers with thicknesses of only about 1 nm. When growing the samples, we could not only obtain a 100 percent proportion of samples with the same shape, but the samples could also be glued into pieces of 700 μm and above in size, changing the shape and making it possible to reach the millimeter/submillimeter level visible to the naked eye. Our method is an effective method for the growth of large-area films with universal applicability.
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Affiliation(s)
- Yuqing Li
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yuyan Zhao
- Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Xiaoqian Wang
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Wanli Liu
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Jiazhen He
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xuemin Luo
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Jinfeng Liu
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yong Liu
- International School of Materials Science and Engineering (ISMSE), State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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8
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Azam N, Mahjouri-Samani M. Time-Resolved Growth of 2D WSe 2 Monolayer Crystals. ACS Nano 2023. [PMID: 37339265 DOI: 10.1021/acsnano.3c02280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Understanding and controlling the growth evolution of atomically thin monolayer two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) are vital for next-generation 2D electronics and optoelectronic devices. However, their growth kinetics are not fully observed or well understood due to the bottlenecks associated with the existing synthesis methods. This study demonstrates the time-resolved and ultrafast growth of 2D materials by a laser-based synthesis approach that enables the rapid initiation and termination of the vaporization process during crystal growth. The use of stoichiometric powder (e.g., WSe2) minimizes the complex chemistry during the vaporization and growth process, allowing rapid initiation/termination control over the generated flux. An extensive set of experiments is performed to understand the growth evolution, achieving subsecond growth as low as 10 ms along with a 100 μm/s growth rate on a noncatalytic substrate such as Si/SiO2. Overall, this study allows us to observe and understand the 2D crystal evolution and growth kinetics with time-resolved and subsecond time scales.
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Affiliation(s)
- Nurul Azam
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
| | - Masoud Mahjouri-Samani
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
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9
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Xin X, Chen J, Ma L, Ma T, Xin W, Xu H, Ren W, Liu Y. Grain Size Engineering of CVD-Grown Large-Area Graphene Films. Small Methods 2023:e2300156. [PMID: 37075746 DOI: 10.1002/smtd.202300156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/02/2023] [Indexed: 05/03/2023]
Abstract
Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.
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Affiliation(s)
- Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Jiamei Chen
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Laipeng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Teng Ma
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
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10
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. Adv Mater 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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11
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Liu F. Time- and angle-resolved photoemission spectroscopy (TR-ARPES) of TMDC monolayers and bilayers. Chem Sci 2023; 14:736-750. [PMID: 36755720 PMCID: PMC9890651 DOI: 10.1039/d2sc04124c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2022] [Accepted: 12/04/2022] [Indexed: 12/12/2022] Open
Abstract
Many unique properties in two-dimensional (2D) materials and their heterostructures rely on charge excitation, scattering, transfer, and relaxation dynamics across different points in the momentum space. Understanding these dynamics is crucial in both the fundamental study of 2D physics and their incorporation in optoelectronic and quantum devices. A direct method to probe charge carrier dynamics with momentum resolution is time- and angle-resolved photoemission spectroscopy (TR-ARPES). Such measurements have been challenging, since photoexcited carriers in many 2D monolayers reside at high crystal momenta, requiring probe photon energies in the extreme UV (EUV) regime. These challenges have been recently addressed by development of table-top pulsed EUV sources based on high harmonic generation, and the successful integration into a TR-ARPES and/or time-resolved momentum microscope. Such experiments will allow direct imaging of photoelectrons with superior time, energy, and crystal momentum resolution, with unique advantage over traditional optical measurements. Recently, TR-ARPES experiments of 2D transition metal dichalcogenide (TMDC) monolayers and bilayers have created unprecedented opportunities to reveal many intrinsic dynamics of 2D materials, such as bandgap renormalization, charge carrier scattering, relaxation, and wavefunction localization in moiré patterns. This perspective aims to give a short review of recent discoveries and discuss the challenges and opportunities of such techniques in the future.
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Affiliation(s)
- Fang Liu
- Department of Chemistry and the PULSE Institute, Stanford University Stanford California 94305 USA
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12
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Shan X, Wu Z, Xie Y, Lin X, Zhou B, Zhang Y, Yan X, Ren T, Wang F, Zhang K. Centimetre-scale single crystal α-MoO 3: oxygen assisted self-standing growth and low-energy consumption synaptic devices. Nanoscale 2023; 15:1200-1209. [PMID: 36533724 DOI: 10.1039/d2nr04530c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of a mature mechanism makes it difficult to obtain high-quality single crystals in large-scale 2D materials. In this work, we prepared a centimeter-scale single crystal α-MoO3via an oxygen assisted substrate-free self-standing growth method and mechanism and constructed high-performance synaptic devices based on the centimeter-scale α-MoO3. The oxygen assisted growth mechanism of α-MoO3 was developed from the periodic bond chain theory. The large-scale α-MoO3 is up to 2 cm and exhibits high homogeneity and single crystalline characteristic. Furthermore, with an optimized oxygen partial pressure (18%), the centimeter-scale α-MoO3 makes the as-prepared memristor achieve continuous conductance modulation. Moreover, the trap-controlled electron conducting mechanism of the memristor was demonstrated through I-V curve fitting analysis at various temperatures, in which the high resistance state section demonstrates space-charge-limited conduction (SCLC) mode. Moreover, the as-prepared α-MoO3 memristors exhibit low-energy consumption and well emulate the essential synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation and long-term plasticity.
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Affiliation(s)
- Xin Shan
- School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Zeyu Wu
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Yangyang Xie
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xin Lin
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Yupeng Zhang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaobing Yan
- College of Electronic and Information Engineering, Hebei University, Baoding 071000, China
| | - Tianling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Fang Wang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Kailiang Zhang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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13
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. Adv Mater 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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14
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Wang J, Park JH, Lu AY, Kong J. Electrical Control of Chemical Vapor Deposition of Graphene. J Am Chem Soc 2022; 144:22925-22932. [DOI: 10.1021/jacs.2c08001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Jiangtao Wang
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ji-Hoon Park
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ang-Yu Lu
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Jing Kong
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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15
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Li F, Li Y, Zhao Y, Liu M, Kan E, Li Q, Wan Y. Synthesis of graphene nanomesh with symmetrical fractal patterns via hydrogen-free chemical vapor deposition. Nanotechnology 2022; 34:045601. [PMID: 36301681 DOI: 10.1088/1361-6528/ac9d42] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 10/24/2022] [Indexed: 06/16/2023]
Abstract
Graphene nanomesh (GNM), an emerging graphene nanostructure with a tunable bandgap, has gained tremendous interests owing to its great potentials in the fields of high-performance field-effect transistors, electrochemical sensors, new generation of spintronics and energy converters. In previous works, GNM has been successfully obtained on copper foil surface by employing hydrogen as an etching agent. A more facile, and low-cost strategy for the preparation of GNM is required. Here, we demonstrated a direct and feasible means for synthesizing large-area GNM with symmetrical fractal patterns via a hydrogen-free chemical vapor deposition method. The influences of the growth time and the gas source flow on the morphology of GNM patterns were systematically investigated. Then, we exhibited the key reaction details and proposed a growth mechanism of the GNM synthesis during the hydrogen-free chemical vapor deposition process. This work provides a valuable guidance for quality control in GNM mass production.
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Affiliation(s)
- Fang Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - You Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yibin Zhao
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Mingyan Liu
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Erjun Kan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Qiongyu Li
- School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350118, People's Republic of China
| | - Yi Wan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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16
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Li J, Samad A, Schwingenschlögl U, Tian B, Lanza M, Zhang X. Morphology-Control Growth of Graphene Islands by Nonlinear Carbon Supply. Adv Mater 2022; 34:e2206080. [PMID: 36052575 DOI: 10.1002/adma.202206080] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/18/2022] [Indexed: 06/15/2023]
Abstract
Controlling the morphology of graphene and other 2D materials in chemical vapor deposition (CVD) growth is crucial because the morphology reflects the crystal quality of as-synthesized nanomaterials in a certain way, and consequently it indirectly represents the physical properties of 2D materials such as bandgap, selective ion transportation, and impermeability. However, precise control of the morphology is limited by the complex formation mechanism and sensitive growth-environment factors of graphene. Therefore, the CVD synthesis of single-crystal hexagonal-shaped graphene islands with specific sizes is challenging. Herein, an unconventional nonlinear-carbon-supply growth strategy is proposed to realize controllable CVD growth of desired hexagonal graphene islands with specific sizes on Cu substrates. Large-area graphene films of isolated islands with desired densities, sizes, and distances between the islands are successfully synthesized. Subsequently, the direct growth of a planar-tunnel-junction structure based on two parallel gapped graphene islands is achieved by specific adjustment of the growth and etching processes of graphene CVD synthesis. It is therefore demonstrated that the nonlinear-carbon-supply growth strategy is a reliable method for the synthesis of high-quality graphene and can facilitate the direct growth of graphene-based nanodevices in the future.
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Affiliation(s)
- Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Abdus Samad
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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17
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Affiliation(s)
- Seong-Jun Yang
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea
| | - Cheol-Joo Kim
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Republic of Korea.
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea.
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18
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Gao Q, Lu J, Chen S, Chen L, Xu Z, Lin D, Xu S, Liu P, Zhang X, Cai W, Zhang C. Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al 2O 3 Substrates. Nanomaterials (Basel) 2022; 12:2719. [PMID: 35957148 PMCID: PMC9370393 DOI: 10.3390/nano12152719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 08/01/2022] [Accepted: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional molybdenum disulfide (MoS2) has attracted significant attention for next-generation electronics, flexible devices, and optical applications. Chemical vapor deposition is the most promising route for the production of large-scale, high-quality MoS2 films. Recently, the chemical vapor deposition of MoS2 films on soda-lime glass has attracted great attention due to its low cost, fast growth, and large domain size. Typically, a piece of Mo foil or graphite needs to be used as a buffer layer between the glass substrates and the CVD system to prevent the glass substrates from being fragmented. In this study, a novel method was developed for synthesizing MoS2 on glass substrates. Inert Al2O3 was used as the buffer layer and high-quality, uniform, triangular monolayer MoS2 crystals with domain sizes larger than 400 μm were obtained. To demonstrate the advantages of glass/Al2O3 substrates, a direct comparison of CVD MoS2 on glass/Mo and glass/Al2O3 substrates was performed. When Mo foil was used as the buffer layer, serried small bilayer islands and bright core centers could be observed on the MoS2 domains at the center and edges of glass substrates. As a control, uniform MoS2 crystals were obtained when Al2O3 was used as the buffer layer, both at the center and the edge of glass substrates. Raman and PL spectra were further characterized to show the merit of glass/Al2O3 substrates. In addition, the thickness of MoS2 domains was confirmed by an atomic force microscope and the uniformity of MoS2 domains was verified by Raman mapping. This work provides a novel method for CVD MoS2 growth on soda-lime glass and is helpful in realizing commercial applications of MoS2.
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Affiliation(s)
- Qingguo Gao
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Jie Lu
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Simin Chen
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Lvcheng Chen
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Zhequan Xu
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Dexi Lin
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Songyi Xu
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Ping Liu
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Chongfu Zhang
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
- School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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19
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Ma T, Yao B, Zheng Z, Liu Z, Ma W, Chen M, Chen H, Deng S, Xu N, Bao Q, Sun DM, Cheng HM, Ren W. Engineering Graphene Grain Boundaries for Plasmonic Multi-Excitation and Hotspots. ACS Nano 2022; 16:9041-9048. [PMID: 35696451 DOI: 10.1021/acsnano.2c00396] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Surface plasmons, merging photonics and electronics in nanoscale dimensions, have been the cornerstones in integrated informatics, precision detection, high-resolution imaging, and energy conversion. Arising from the exceptional Fermi-Dirac tunability, ultrafast carrier mobility, and high-field confinement, graphene offers excellent advantages for plasmon technologies and enables a variety of state-of-the-art optoelectronic applications ranging from tight-field-enhanced light sources, modulators, and photodetectors to biochemical sensors. However, it is challenging to co-excite multiple graphene plasmons on one single graphene sheet with high density, a key step toward plasmonic wavelength-division multiplexing and next-generation dynamical optoelectronics. Here, we report the heteroepitaxial growth of a polycrystalline graphene monolayer with patterned gradient grain boundary density, which is synthesized by creating diverse nanosized local growth environments on a centimeter-scale substrate with a polycrystalline graphene ring seed in chemical vapor deposition. Such geometry enables plasmonic co-excitation with varied wavelength diversification in the nanoscale. Via using high-resolution scanning near-field optical microscopy, we demonstrate rich plasmon standing waves, even bright plasmonic hotspots with a size up to 3 μm. Moreover, by changing the grain boundary density and annealing, we find the local plasmonic wavelengths are widely tunable, from 70 to 300 nm. Theoretical modeling supports that such plasmonic versatility is due to the grain boundary-induced plasmon-phonon interactions through random phase approximation. The seed-induced heteroepitaxial growth provides a promising way for the grain boundary engineering of two-dimensional materials, and the controllable grain boundary-based plasmon co-generation and manipulation in one single graphene monolayer will facilitate the applications of graphene for plasmonics and nanophotonics.
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Affiliation(s)
- Teng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Zebo Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Qiaoliang Bao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
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20
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Xin X, Chen J, Zhang Y, Chen ML, Bao Y, Liu W, Liu Y, Xu H, Ren W. Ultrafast growth of submillimeter-scale single-crystal MoSe 2 by pre-alloying CVD. Nanoscale Horiz 2022; 7:743-751. [PMID: 35482297 DOI: 10.1039/d2nh00105e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The synthesis of large-scale monolayer single-crystal MX2 (M = Mo, W; X = S, Se), a typical transition metal dichalcogenide (TMD), is the premise for their future applications. Compared with insulating substrates such as SiO2 and sapphire, Au is more favourable for the fast growth of TMDs by chemical vapor deposition (CVD). Recently, large-scale single-crystal WX2 was successfully grown and transferred on Au. In sharp contrast, the growth and transfer for monolayer MoX2 is still very challenging, because Au has a higher solubility of Mo and stronger interaction with MoX2 than WX2. Compared with the most studied MoS2, MoSe2 is superior in many aspects because of the narrower band gap and tunable excitonic charging effects. However, the synthesis of large-scale single-crystal MoSe2 on Au has not been reported so far. Here, a pre-alloying CVD method was developed to solve the problems for the growth and non-destructive transfer of MoX2. It has realized the ultrafast growth (30 s) of submillimeter-scale (560 μm) single-crystal MoSe2 for the first time. As-grown samples are strictly monolayers with good optical and electrical properties, which can be easily transferred without sacrificing Au foils by the electrochemical bubbling method. It was found that pre-alloying not only passivates the energetically active sites on Au but also weakens the interaction between Au and MoSe2, which is responsible for the ultrafast growth and easy transfer of MoSe2. This method is also universal for the fast growth and non-destructive transfer of other 2D TMDs.
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Affiliation(s)
- Xing Xin
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China.
| | - Jiamei Chen
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
| | - Yanmei Zhang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
| | - Mao-Lin Chen
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 03006, China
| | - Youzhe Bao
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
| | - Weizhen Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
| | - Haiyang Xu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China.
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
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21
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Lokhande PE, Pakdel A, Pathan HM, Kumar D, Vo DVN, Al-Gheethi A, Sharma A, Goel S, Singh PP, Lee BK. Prospects of MXenes in energy storage applications. Chemosphere 2022; 297:134225. [PMID: 35259358 DOI: 10.1016/j.chemosphere.2022.134225] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2021] [Revised: 02/26/2022] [Accepted: 03/03/2022] [Indexed: 06/14/2023]
Abstract
The transition metal carbides/nitrides referred to as MXenes has emerged as a wonder material presenting newer opportunities owing to their unique properties such as high thermal and electrical conductivity, high negative zeta-potential and mechanical properties similar to the parent transition metal carbides/nitrides. These properties of MXenes can be utilized in various societal applications including for energy storage and energy conversion. In this focused review, we provide a ready glance into the evolutionary development of the MXene family and various efforts that are made globally towards property improvement and performance enhancement. Particular attention in this review is made to direct the attention of readers to the bright prospects of MXene in the energy storage and energy conversion process - which is extremely timely to tackle the current concern on climate change. The review concludes by offering fresh insights into the future research needs and challenges that need to be addressed to develop resilient energy solutions.
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Affiliation(s)
- P E Lokhande
- Department of Physics, Savitribai Phule Pune University, Pune, 411007, India; Department of Mechanical, Manufacturing and Biomedical Engineering, Trinity College Dublin, Dublin, Ireland.
| | - Amir Pakdel
- Department of Mechanical, Manufacturing and Biomedical Engineering, Trinity College Dublin, Dublin, Ireland
| | - H M Pathan
- Department of Physics, Savitribai Phule Pune University, Pune, 411007, India
| | - Deepak Kumar
- School of Chemical Engineering and Physical Sciences, Lovely Professional University, Phagwara, 144411, India.
| | - Dai-Viet N Vo
- Center of Excellence for Green Energy and Environmental Nanomaterials (CE@GrEEN), Nguyen Tat Thanh University, Ho Chi Minh City, 755414, Viet Nam
| | - Adel Al-Gheethi
- Faculty of Civil Engineering and Built Environment (FKAAB), Universiti Tun Hussein Onn Malaysia (UTHM), 86400, Batu Pahat, Johor, Malaysia
| | - Ajit Sharma
- School of Chemical Engineering and Physical Sciences, Lovely Professional University, Phagwara, 144411, India
| | - Saurav Goel
- School of Engineering, London South Bank University, London, SE1 0 AA, UK; University of Petroleum and Energy Studies, Dehradun, 248007, India; Indian Institute of Technology Guwahati, Guwahati, 781039, India
| | | | - Byeong-Kyu Lee
- Department of Civil and Environmental Engineering, University of Ulsan, Daehak, South Korea
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22
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Du W, Cheng X, Zhang Z, Cheng Z, Xu X, Xu W, Li Y, Liu K, Dai L. Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe2 and Graphene Vertical vdWs Heterostructure. Applied Sciences 2022; 12:3622. [DOI: 10.3390/app12073622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption in the range of visible to infrared wavelength. High-performance photodetectors are expected to achieve through the combination of graphene and TMDCs. Nowadays, near-infrared (NIR) photodetectors play significant roles in many areas. MoTe2 with bandgap energy of about 1.0 eV in its bulk form is a promising material for cost-saving NIR photodetectors. Thus far, only a few of the reported studies on NIR photodetectors built on MoTe2/graphene heterostructures have achieved high responsivity and short response time simultaneously in one device. In this study, we fabricate graphene–MoTe2–graphene vertical van der Waals heterostructure devices through chemical vapor deposition (CVD) growth, wet transfer method, and dry etching technique. Under 1064 nm laser illumination, we acquire responsivity of as high as 635 A/W and a response time of as short as 19 μs from the as-fabricated device. Moreover, we acquire higher responsivity of 1752 A/W and a shorter response time of 16 μs from the Al2O3-encapsulated device. Our research drives the application of 2D materials in the NIR wavelength range.
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23
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Zhang Q, Xiao X, Li L, Geng D, Chen W, Hu W. Additive-Assisted Growth of Scaled and Quality 2D Materials. Small 2022; 18:e2107241. [PMID: 35092150 DOI: 10.1002/smll.202107241] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/19/2021] [Indexed: 06/14/2023]
Abstract
2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.
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Affiliation(s)
- Qing Zhang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Xixi Xiao
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Lin Li
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, China
| | - Dechao Geng
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Wenping Hu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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24
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Yang H, Wang G, Guo Y, Wang L, Tan B, Zhang S, Zhang X, Zhang J, Shuai Y, Lin J, Jia D, Hu P. Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs. Nanoscale 2022; 14:4204-4215. [PMID: 35234771 DOI: 10.1039/d1nr06004j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.
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Affiliation(s)
- Huihui Yang
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Yanming Guo
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Australia
| | - Biying Tan
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Shichao Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Xin Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Jia Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
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25
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Abstract
Two-dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large-size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single-crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single-crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step-guided epitaxy, and in-plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.
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Affiliation(s)
- Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Xiaonan Yang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Rongming Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
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26
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Li P, Zeng X, Li Z. Understanding High-Temperature Chemical Reactions on Metal Surfaces: A Case Study on Equilibrium Concentration and Diffusivity of C x H y on a Cu(111) Surface. JACS Au 2022; 2:443-452. [PMID: 35252993 PMCID: PMC8889606 DOI: 10.1021/jacsau.1c00483] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Indexed: 05/24/2023]
Abstract
Chemical reactions on metal surfaces are important in various processes such as heterogeneous catalysis and nanostructure growth. At moderate or lower temperatures, these reactions generally follow the minimum energy path, and temperature effects can be reasonably described by a harmonic oscillator model. At a high temperature approaching the melting point of the substrate, general behaviors of surface reactions remain elusive. In this study, by taking hydrocarbon species adsorbed on Cu(111) as a model system and performing extensive molecular dynamics simulations powered by machine learning potentials, we identify several important high-temperature effects, including local chemical environment, surface atom mobility, and substrate thermal expansion. They affect different aspects of a high-temperature surface reaction in different ways. These results deepen our understanding of high-temperature reactions.
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27
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Zuo Y, Liu C, Ding L, Qiao R, Tian J, Liu C, Wang Q, Xue G, You Y, Guo Q, Wang J, Fu Y, Liu K, Zhou X, Hong H, Wu M, Lu X, Yang R, Zhang G, Yu D, Wang E, Bai X, Ding F, Liu K. Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply. Nat Commun 2022; 13:1007. [PMID: 35197463 PMCID: PMC8866400 DOI: 10.1038/s41467-022-28628-7] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Accepted: 01/26/2022] [Indexed: 11/23/2022] Open
Abstract
The precise precursor supply is a precondition for controllable growth of two-dimensional (2D) transition metal dichalcogenides (TMDs). Although great efforts have been devoted to modulating the transition metal supply, few effective methods of chalcogen feeding control were developed. Here we report a strategy of using active chalcogen monomer supply to grow high-quality TMDs in a robust and controllable manner, e.g., MoS2 monolayers perform representative photoluminescent circular helicity of ~92% and electronic mobility of ~42 cm2V−1s−1. Meanwhile, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation, reaction, vacancy healing and alloy formation during the growth. Our work offers a degree of freedom for the controllable synthesis of 2D compounds and their alloys, benefiting the development of high-end devices with desired 2D materials. The large-area growth of 2D transition metal dichalcogenides (TMDs) requires a precise control of metal and chalcogen precursors. Here, the authors implement a strategy using active chalcogen monomer supply to grow monolayer TMDs and their alloys, showing low defect density and improved optoelectronic properties.
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Affiliation(s)
- Yonggang Zuo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.,The Key Laboratory of Unconventional Metallurgy, Ministry of Education, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, Yunnan, China
| | - Can Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China. .,Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices, Renmin University of China, 100872, Beijing, China.
| | - Liping Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
| | - Ruixi Qiao
- International Centre for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Chang Liu
- International Centre for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Yilong You
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Jinhuan Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Ying Fu
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Kehai Liu
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Xu Zhou
- School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, Guangdong, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China.,Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
| | - Xiaobo Lu
- International Centre for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, Guangdong, China
| | - Enge Wang
- International Centre for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China.,Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.,School of Physics, Liaoning University, Liaoning, 110136, Shenyang, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China. .,Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China. .,International Centre for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China. .,Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
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28
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Liu F, Wang T, Zhang Z, Shen T, Rong X, Sheng B, Yang L, Li D, Wei J, Sheng S, Li X, Chen Z, Tao R, Yuan Y, Yang X, Xu F, Zhang J, Liu K, Li XZ, Shen B, Wang X. Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration. Adv Mater 2022; 34:e2106814. [PMID: 34757663 DOI: 10.1002/adma.202106814] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 10/30/2021] [Indexed: 06/13/2023]
Abstract
Quasi van der Waals epitaxy, a pioneering epitaxy of sp3 -hybridized semiconductor films on sp2 -hybridized 2D materials, provides a way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III-nitride epilayer until now. Here, it is reported that the epitaxy of gallium nitride (GaN) on graphene can tune the atom arrangement (lattice polarity) through manipulation of the interface atomic configuration, where GaN films with gallium and nitrogen polarity are achieved by forming CONGa(3) or COGaN(3) configurations, respectively, on artificial CO surface dangling bonds by atomic oxygen pre-irradiation on trilayer graphene. Furthermore, an aluminum nitride buffer/interlayer leads to unique metal polarity due to the formation of an AlON thin layer in a growth environment containing trace amounts of oxygen, which explains the open question of why those reported wurtzite III-nitride films on 2D materials always exhibit metal polarity. The reported atomic modulation through interface manipulation provides an effective model for hexagonal nitride semiconductor layers grown on graphene, which definitely promotes the development of novel semiconductor devices.
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Affiliation(s)
- Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Tao Wang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Institute for Multidisciplinary Innovation, University of Science and Technology Beijing, Beijing, 100083, China
| | - Tong Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Xin Rong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Liuyun Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Duo Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Jiaqi Wei
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shanshan Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Xingguang Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Zhaoying Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Renchun Tao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xuelin Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Fujun Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Jingmin Zhang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
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29
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Huang D, Jiang T, Yi Y, Shan Y, Li Y, Zhang Z, Liu K, Liu WT, Wu S. Selective excitation of four-wave mixing by helicity in gated graphene. Opt Lett 2022; 47:234-237. [PMID: 35030575 DOI: 10.1364/ol.443600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2021] [Accepted: 11/22/2021] [Indexed: 06/14/2023]
Abstract
Gapless Dirac fermions in monolayer graphene give rise to an abundance of peculiar physical properties, including exceptional broadband nonlinear optical responses. By tuning the chemical potential, stacking order, and photonic structures, the effective modulation of nonlinear optical phenomena in graphene has been demonstrated in recent years. Here, we demonstrate that optical helicity can be used as an extra tuning knob for four-wave mixing in gated graphene. Our results reveal the helicity selection rule for four-wave mixing in monolayer graphene, revealing nearly perfect circular polarization. Corresponding theoretical interpretations of the helicity selection rule that are also applicable to other nonlinear optical processes and materials are presented.
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30
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Cho JH, Cayll D, Behera D, Cullinan M. Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS). Micromachines (Basel) 2021; 13:27. [PMID: 35056192 PMCID: PMC8777989 DOI: 10.3390/mi13010027] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2021] [Revised: 12/11/2021] [Accepted: 12/14/2021] [Indexed: 01/21/2023]
Abstract
The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.
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Affiliation(s)
| | | | | | - Michael Cullinan
- Department of Mechanical Engineering, The University of Texas at Austin, 204 E Dean Keeton St, Austin, TX 78712, USA; (J.H.C.); (D.C.); (D.B.)
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31
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Han Q, Pang J, Li Y, Sun B, Ibarlucea B, Liu X, Gemming T, Cheng Q, Zhang S, Liu H, Wang J, Zhou W, Cuniberti G, Rümmeli MH. Graphene Biodevices for Early Disease Diagnosis Based on Biomarker Detection. ACS Sens 2021; 6:3841-3881. [PMID: 34696585 DOI: 10.1021/acssensors.1c01172] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The early diagnosis of diseases plays a vital role in healthcare and the extension of human life. Graphene-based biosensors have boosted the early diagnosis of diseases by detecting and monitoring related biomarkers, providing a better understanding of various physiological and pathological processes. They have generated tremendous interest, made significant advances, and offered promising application prospects. In this paper, we discuss the background of graphene and biosensors, including the properties and functionalization of graphene and biosensors. Second, the significant technologies adopted by biosensors are discussed, such as field-effect transistors and electrochemical and optical methods. Subsequently, we highlight biosensors for detecting various biomarkers, including ions, small molecules, macromolecules, viruses, bacteria, and living human cells. Finally, the opportunities and challenges of graphene-based biosensors and related broad research interests are discussed.
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Affiliation(s)
- Qingfang Han
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
- School of Biological Science and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan 250022, Shandong, China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Baojun Sun
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
- School of Biological Science and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan 250022, Shandong, China
| | - Bergoi Ibarlucea
- Dresden Center for Computational Materials Science, Technische Universität Dresden, Dresden 01062, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, Dresden 01062, Germany
| | - Xiaoyan Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden D-01171, Germany
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Shu Zhang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
- State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China
| | - Jingang Wang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Gianaurelio Cuniberti
- Dresden Center for Computational Materials Science, Technische Universität Dresden, Dresden 01062, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, Dresden 01062, Germany
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, Dresden 01069, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany
| | - Mark H. Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden D-01171, Germany
- College of Energy, Soochow, Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland
- Institute of Environmental Technology (CEET), VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
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Han Z, Li L, Jiao F, Yu G, Wei Z, Geng D, Hu W. Continuous orientated growth of scaled single-crystal 2D monolayer films. Nanoscale Adv 2021; 3:6545-6567. [PMID: 36132651 PMCID: PMC9418785 DOI: 10.1039/d1na00545f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Accepted: 10/03/2021] [Indexed: 06/16/2023]
Abstract
Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.
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Affiliation(s)
- Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Lin Li
- Institute of Molecular Plus Tianjin 300072 P. R. China
| | - Fei Jiao
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
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Chen Z, Xie C, Wang W, Zhao J, Liu B, Shan J, Wang X, Hong M, Lin L, Huang L, Lin X, Yang S, Gao X, Zhang Y, Gao P, Novoselov KS, Sun J, Liu Z. Direct growth of wafer-scale highly oriented graphene on sapphire. Sci Adv 2021; 7:eabk0115. [PMID: 34797705 PMCID: PMC8604399 DOI: 10.1126/sciadv.abk0115] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Direct chemical vapor deposition (CVD) growth of wafer-scale high-quality graphene on dielectrics is of paramount importance for versatile applications. Nevertheless, the synthesized graphene is typically a polycrystalline film with high density of uncontrolled defects, resulting in a low carrier mobility and high sheet resistance. Here, we report the direct growth of highly oriented monolayer graphene films on sapphire wafers. Our growth strategy is achieved by designing an electromagnetic induction heating CVD operated at elevated temperature, where the high pyrolysis and migration barriers of carbon species are easily overcome. Meanwhile, the embryonic graphene domains are guided into good alignment by minimizing its configuration energy. The thus obtained graphene film accordingly manifests a markedly improved carrier mobility (~14,700 square centimeters per volt per second at 4 kelvin) and reduced sheet resistance (~587 ohms per square), which compare favorably with those from catalytic growth on polycrystalline metal foils and epitaxial growth on silicon carbide.
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Affiliation(s)
- Zhaolong Chen
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
| | - Chunyu Xie
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
| | - Jinpei Zhao
- Department of Physics, National University of Singapore, Singapore 117551, Singapore
| | - Bingyao Liu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Jingyuan Shan
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Xueyan Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Min Hong
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Li Lin
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
| | - Li Huang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiao Lin
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shenyuan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Corresponding author. (S.Y.); (Y.Z.); (P.G.); (K.S.N.); (J.S.); (Z.L.)
| | - Xuan Gao
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Corresponding author. (S.Y.); (Y.Z.); (P.G.); (K.S.N.); (J.S.); (Z.L.)
| | - Peng Gao
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871,China
- Corresponding author. (S.Y.); (Y.Z.); (P.G.); (K.S.N.); (J.S.); (Z.L.)
| | - Kostya S. Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
- Corresponding author. (S.Y.); (Y.Z.); (P.G.); (K.S.N.); (J.S.); (Z.L.)
| | - Jingyu Sun
- Beijing Graphene Institute (BGI), Beijing 100095, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Corresponding author. (S.Y.); (Y.Z.); (P.G.); (K.S.N.); (J.S.); (Z.L.)
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Corresponding author. (S.Y.); (Y.Z.); (P.G.); (K.S.N.); (J.S.); (Z.L.)
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Abstract
[Figure: see text].
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Affiliation(s)
- Piran R Kidambi
- Department of Chemical and Bimolecular Engineering, Vanderbilt University, Nashville, TN, USA.,Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, USA.,Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, USA.,Interdisciplinary Graduate Program in Material Science, Vanderbilt University, Nashville, TN, USA
| | - Pavan Chaturvedi
- Department of Chemical and Bimolecular Engineering, Vanderbilt University, Nashville, TN, USA
| | - Nicole K Moehring
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, USA.,Interdisciplinary Graduate Program in Material Science, Vanderbilt University, Nashville, TN, USA
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Yuan Z, He G, Faucher S, Kuehne M, Li SX, Blankschtein D, Strano MS. Direct Chemical Vapor Deposition Synthesis of Porous Single-Layer Graphene Membranes with High Gas Permeances and Selectivities. Adv Mater 2021; 33:e2104308. [PMID: 34510595 DOI: 10.1002/adma.202104308] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2021] [Revised: 08/05/2021] [Indexed: 06/13/2023]
Abstract
Single-layer graphene containing molecular-sized in-plane pores is regarded as a promising membrane material for high-performance gas separations due to its atomic thickness and low gas transport resistance. However, typical etching-based pore generation methods cannot decouple pore nucleation and pore growth, resulting in a trade-off between high areal pore density and high selectivity. In contrast, intrinsic pores in graphene formed during chemical vapor deposition are not created by etching. Therefore, intrinsically porous graphene can exhibit high pore density while maintaining its gas selectivity. In this work, the density of intrinsic graphene pores is systematically controlled for the first time, while appropriate pore sizes for gas sieving are precisely maintained. As a result, single-layer graphene membranes with the highest H2 /CH4 separation performances recorded to date (H2 permeance > 4000 GPU and H2 /CH4 selectivity > 2000) are fabricated by manipulating growth temperature, precursor concentration, and non-covalent decoration of the graphene surface. Moreover, it is identified that nanoscale molecular fouling of the graphene surface during gas separation where graphene pores are partially blocked by hydrocarbon contaminants under experimental conditions, controls both selectivity and temperature dependent permeance. Overall, the direct synthesis of porous single-layer graphene exploits its tremendous potential as high-performance gas-sieving membranes.
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Affiliation(s)
- Zhe Yuan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Guangwei He
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Samuel Faucher
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Matthias Kuehne
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Sylvia Xin Li
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Daniel Blankschtein
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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Wang X, Han X, Li C, Chen Z, Huang H, Chen J, Wu C, Fan T, Li T, Huang W, Al-Hartomy OA, Al-Ghamdi A, Wageh S, Zheng F, Al-Sehemi AG, Wang G, Xie Z, Zhang H. 2D materials for bone therapy. Adv Drug Deliv Rev 2021; 178:113970. [PMID: 34509576 DOI: 10.1016/j.addr.2021.113970] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2021] [Revised: 08/24/2021] [Accepted: 09/07/2021] [Indexed: 12/12/2022]
Abstract
Due to their prominent physicochemical properties, 2D materials are broadly applied in biomedicine. Currently, 2D materials have achieved great success in treating many diseases such as cancer and tissue engineering as well as bone therapy. Based on their different characteristics, 2D materials could function in various ways in different bone diseases. Herein, the application of 2D materials in bone tissue engineering, joint lubrication, infection of orthopedic implants, bone tumors, and osteoarthritis are firstly reviewed comprehensively together. Meanwhile, different mechanisms by which 2D materials function in each disease reviewed below are also reviewed in detail, which in turn reveals the versatile functions and application of 2D materials. At last, the outlook on how to further broaden applications of 2D materials in bone therapies based on their excellent properties is also discussed.
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Affiliation(s)
- Xiangjiang Wang
- The Sixth Affiliated Hospital of Guangzhou Medical University, Qingyuan People's Hospital, Qingyuan 511518, Guangdong, China
| | - Xianjing Han
- The Sixth Affiliated Hospital of Guangzhou Medical University, Qingyuan People's Hospital, Qingyuan 511518, Guangdong, China
| | - Chaozhou Li
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zhi Chen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Hao Huang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jindong Chen
- The Sixth Affiliated Hospital of Guangzhou Medical University, Qingyuan People's Hospital, Qingyuan 511518, Guangdong, China
| | - Chenshuo Wu
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Taojian Fan
- College of Health Science and Environmental Engineering, Shenzhen Technology University, Shenzhen 518118, China
| | - Tianzhong Li
- Shenzhen International Institute for Biomedical Research, Shenzhen 518116, Guangdong, China
| | - Weichun Huang
- Nantong Key Lab of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, PR China
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Fei Zheng
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Abdullah G Al-Sehemi
- Department of Chemistry, Faculty of Science, Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, P.O. Box 9004, Saudi Arabia
| | - Guiqing Wang
- The Sixth Affiliated Hospital of Guangzhou Medical University, Qingyuan People's Hospital, Qingyuan 511518, Guangdong, China
| | - Zhongjian Xie
- Institute of Pediatrics, Shenzhen Children's Hospital, Shenzhen 518038, Guangdong, PR China; Shenzhen International Institute for Biomedical Research, Shenzhen 518116, Guangdong, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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Jiang B, Wang S, Sun J, Liu Z. Controllable Synthesis of Wafer-Scale Graphene Films: Challenges, Status, and Perspectives. Small 2021; 17:e2008017. [PMID: 34106524 DOI: 10.1002/smll.202008017] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 02/22/2021] [Indexed: 06/12/2023]
Abstract
The availability of high-quality, large-scale, and single-crystal wafer-scale graphene films is fundamental for key device applications in the field of electronics, optics, and sensors. Synthesis determines the future: unleashing the full potentials of such emerging materials relies heavily upon their tailored synthesis in a scalable fashion, which is by no means an easy task to date. This review covers the state-of-the-art progress in the synthesis of wafer-scale graphene films by virtue of chemical vapor deposition (CVD), with a focus on main challenges and present status. Particularly, prevailing synthetic strategies are highlighted on a basis of the discussion in the reaction kinetics and gas-phase dynamics during CVD process. Perspectives with respect to key opportunities and promising research directions are proposed to guide the future development of wafer-scale graphene films.
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Affiliation(s)
- Bei Jiang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
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38
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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Li S, Wang S, Xu T, Zhang H, Tang Y, Liu S, Jiang T, Zhou S, Cheng H. Growth mechanism and atomic structure of group-IIA compound-promoted CVD-synthesized monolayer transition metal dichalcogenides. Nanoscale 2021; 13:13030-13041. [PMID: 34477786 DOI: 10.1039/d1nr03273a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Developing promoters that can boost the growth quality, efficiency, and robustness of two-dimensional (2D) transition metal dichalcogenides is significant for their industrial applications. Herein a new group (group IIA) of promoters in the periodic table has been disclosed, whose chlorides (especially CaCl2 and SrCl2) exhibit a versatile promoting effect on the CVD growth of various TMD monolayers, including hexagonal MoS2, MoSe2, Re doped MoS2, and triclinic ReS2. The promoting effect of group IIA promoters relies on the appropriate dose and is strongly substrate-dependent. The performances of five typical group IA-IIA metal chlorides are ranked by quantitative investigations, displaying periodic variations closely related to the electronegativities of the metal elements. A brand-new acid-base match model is proposed, attributing the promoting mechanism to an increase of the substrate basicity due to the usage of promoters, thus leading to the sufficient adsorption of the acidic precursor. Aberration-corrected annular dark field scanning transmission electron microscopy (ADF-STEM) was applied, unveiling anomalous grain boundaries (GBs) with a low density of coincident sites in the as-grown ReS2 and detailed atomic configurations of Re doped MoS2. This work expands the promoter library and gives an insight into GB engineering for the CVD growth of 2D TMDs.
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Affiliation(s)
- Shouheng Li
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China.
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40
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Kizir S, van den Beld WTE, Schurink B, van de Kruijs RWE, Benschop JPH, Bijkerk F. Bifunctional catalytic effect of Mo 2C/oxide interface on multi-layer graphene growth. Sci Rep 2021; 11:15377. [PMID: 34321528 DOI: 10.1038/s41598-021-94694-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Accepted: 07/12/2021] [Indexed: 11/23/2022] Open
Abstract
The role of the Mo2C/oxide interface on multi-layer graphene (MLG) nucleation during a chemical vapor deposition (CVD) process is investigated. During the CVD process, MLG growth is only observed in the presence of a Mo2C/SiO2 interface, indicating that the chemical reactions occurring at this interface trigger the nucleation of MLG. The chemical reaction pathway is explained in four steps as (1) creation of H radicals, (2) reduction of the oxide surface, (3) formation of C–C bonds at O–H sites, and (4) expansion of graphitic domains on the Mo2C catalyst. Different Mo2C/oxide interfaces are investigated, with varying affinity for reduction in a hydrogen environment. The results demonstrate a catalyst/oxide bifunctionality on MLG nucleation, comprising of CH4 dehydrogenation by Mo2C and initial C–C bond formation at the oxide interface.
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Leidinger P, Kraus J, Günther S. Predicting Graphene Growth on Cu: Universal Kinetic Growth Model and Its Experimental Verification. ACS Nano 2021; 15:12201-12212. [PMID: 34264051 DOI: 10.1021/acsnano.1c03809] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The kinetics of the chemical vapor deposition (CVD) of graphene on Cu in CH4 + H2 were investigated by monitoring the graphene flake size as a function of CVD growth time. A growth model was set up which relates the CVD parameters to the mass action constant Qexp of the methane decomposition reaction toward graphene at a given temperature T. Graphene growth was shown to proceed from pre-equilibrated adsorbed carbon (Cad) within a wide CVD parameter range. The model not only leads to the correct scaling relation of the growth kinetics but quantitatively determines how far the CVD parameters deviate from thermal equilibrium and correctly predicts the absolute flake size increase per time. Fitting experimental data delivers the energy barrier for carbon detachment from the graphene island edge (Edet = 4.7 ± 0.3 eV) and the methane decomposition entropy toward Cad on Cu (ΔdecS° = 260 ± 20 J mol-1 K-1). The latter value is used to estimate the vanishingly small Cad equilibrium concentration of 3 × 10-10 monolayers at 1045 °C. The universal validity of the model is proven by comparison with literature data providing the correct order of magnitude growth velocities up to 1000 μm/h. The performed reactor experiments deliver data that match the predicted flake growth velocity with a precision of about 50%. The obtained results can be used to calibrate any hot wall CVD reactor setup for the methane decomposition reaction toward graphene on Cu. The description can be directly applied for any hydrocarbon in the gas feed, and the technique can be easily applied for other catalytic support surfaces.
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Affiliation(s)
- Paul Leidinger
- Technical University of Munich (TUM), Chemie Department-Physikalische Chemie mit Schwerpunkt Katalyse, Lichtenbergstraße 4, 85748 Garching, Germany
- Catalysis Research Center, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany
| | - Jürgen Kraus
- Technical University of Munich (TUM), Chemie Department-Physikalische Chemie mit Schwerpunkt Katalyse, Lichtenbergstraße 4, 85748 Garching, Germany
| | - Sebastian Günther
- Technical University of Munich (TUM), Chemie Department-Physikalische Chemie mit Schwerpunkt Katalyse, Lichtenbergstraße 4, 85748 Garching, Germany
- Catalysis Research Center, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany
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Zhou D, Zhang Z, Zhu Y, Xiao Y, Ding Q, Ruan L, Sun Y, Zhang Z, Zhu C, Chen Z, Wu Y, Huang Y, Sheng G, Li J, Yu D, Wang E, Ren Z, Lu X, Liu K, Han G. Pattern-Potential-Guided Growth of Textured Macromolecular Films on Graphene/High-Index Copper. Adv Mater 2021; 33:e2006836. [PMID: 34096113 DOI: 10.1002/adma.202006836] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Revised: 03/31/2021] [Indexed: 06/12/2023]
Abstract
Macromolecular films are crucial functional materials widely used in the fields of mechanics, electronics, optoelectronics, and biology, due to their superior properties of chemical stability, small density, high flexibility, and solution-processing ability. Their electronic and mechanical properties, however, are typically much lower than those of crystalline materials, as the macromolecular films have no long-range structural ordering. The state-of-the-art for producing highly ordered macromolecular films is still facing a great challenge due to the complex interactions between adjacent macromolecules. Here, the growth of textured macromolecular films on a designed graphene/high-index copper (Cu) surface is demonstrated. This successful growth is driven by a patterned potential that originates from the different amounts of charge transfer between the graphene and Cu surfaces with, alternately, terraces and step edges. The textured films exhibit a remarkable improvement in remnant ferroelectric polarization and fracture strength. It is also demonstrated that this growth mechanism is universal for different macromolecules. As meter-scale graphene/high-index Cu substrates have recently become available, the results open a new regime for the production and applications of highly ordered macromolecular films with obvious merits of high production and low cost.
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Affiliation(s)
- Dikui Zhou
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
| | - Zhihong Zhang
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Yihan Zhu
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Yiqun Xiao
- Department of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong, 999077, China
| | - Qingqing Ding
- State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Luoyuan Ruan
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
| | - Yiran Sun
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
| | - Zhibin Zhang
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Chongzhi Zhu
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Zongping Chen
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
| | - Yongjun Wu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
| | - Yuhui Huang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
- Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou, 311100, China
| | - Guan Sheng
- Advanced Membranes and Porous Materials Center, Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Jixue Li
- State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Enge Wang
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Zhaohui Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
- Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou, 311100, China
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong, 999077, China
| | - Kaihui Liu
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Gaorong Han
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China
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Cheng Z, Cao R, Wei K, Yao Y, Liu X, Kang J, Dong J, Shi Z, Zhang H, Zhang X. 2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications. Adv Sci (Weinh) 2021; 8:e2003834. [PMID: 34105275 PMCID: PMC8188205 DOI: 10.1002/advs.202003834] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Revised: 01/04/2021] [Indexed: 05/06/2023]
Abstract
2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal-oxide-semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state-of-the-art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material-based photonic devices can be further improved in light-matter interactions, providing a powerful design for silicon photonic integrated circuits.
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Affiliation(s)
- Zhao Cheng
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Rui Cao
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Kangkang Wei
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yuhan Yao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xinyu Liu
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jianlong Kang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Jianji Dong
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Zhe Shi
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Han Zhang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Xinliang Zhang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
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Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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Tian Y, Guo N, Wang WY, Geng W, Jing LC, Wang T, Yuan XT, Zhu Z, Ma Y, Geng HZ. Bilayer and three dimensional conductive network composed by SnCl 2 reduced rGO with CNTs and GO applied in transparent conductive films. Sci Rep 2021; 11:9891. [PMID: 33972640 PMCID: PMC8110960 DOI: 10.1038/s41598-021-89305-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2020] [Accepted: 03/03/2021] [Indexed: 12/01/2022] Open
Abstract
Graphene oxide (GO), reduced graphene oxide (rGO) and carbon nanotubes (CNTs) have their own advantages in electrical, optical, thermal and mechanical properties. An effective combination of these materials is ideal for preparing transparent conductive films to replace the traditional indium tin oxide films. At present, the preparation conditions of rGO are usually harsh and some of them have toxic effects. In this paper, an SnCl2/ethanol solution was selected as the reductant because it requires mild reaction conditions and no harmful products are produced. The whole process of rGO preparation was convenient, fast and environmentally friendly. Then, SEM, XPS, Raman, and XRD were used to verify the high reduction efficiency. CNTs were introduced to improve the film conductive property. The transmittance and sheet resistance were the criteria used to choose the reduction time and the content ratios of GO/CNT. Thanks to the post-treatment of nitric acid, not only the by-product (SnO2) and dispersant in the film are removed, but also the doping effect occurs, which are all conducive to reducing the sheet resistances of films. Ultimately, by combining rGO, GO and CNTs, transparent conductive films with a bilayer and three-dimensional structure were prepared, and they exhibited high transmittance and low sheet resistance (58.8 Ω/sq. at 83.45 T%, 47.5 Ω/sq. at 79.07 T%), with corresponding [Formula: see text] values of 33.8 and 31.8, respectively. In addition, GO and rGO can modify the surface and reduce the film surface roughness. The transparent conductive films are expected to be used in photoelectric devices.
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Affiliation(s)
- Ying Tian
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China
| | - Ning Guo
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China
| | - Wen-Yi Wang
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China.
| | - Wenming Geng
- Carbon Star Technology (Tianjin) Co., Ltd., Tianjin, 300382, China
| | - Li-Chao Jing
- Carbon Star Technology (Tianjin) Co., Ltd., Tianjin, 300382, China
| | - Tao Wang
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China
| | - Xiao-Tong Yuan
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China
| | - Zeru Zhu
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China
| | - Yicheng Ma
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China
| | - Hong-Zhang Geng
- Tianjin Key Laboratory of Advanced Fibers and Energy Storage, School of Material Science and Engineering, Tiangong University, Tianjin, 300387, China.
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46
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Huang M, Deng B, Dong F, Zhang L, Zhang Z, Chen P. Substrate Engineering for CVD Growth of Single Crystal Graphene. Small Methods 2021; 5:e2001213. [PMID: 34928093 DOI: 10.1002/smtd.202001213] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2020] [Revised: 01/13/2021] [Indexed: 06/14/2023]
Abstract
Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.
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Affiliation(s)
- Ming Huang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Bangwei Deng
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Fan Dong
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Lili Zhang
- Institute of Chemical and Engineering Sciences, A*STAR, 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
| | - Zheye Zhang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Peng Chen
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
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Abstract
Wafer-scale single-crystal graphene film directly grown on insulating substrates via the chemical vapor deposition (CVD) method is desired for building high-performance graphene-based devices. In comparison with the well-studied mechanism of graphene growth on transition metal substrates, the lack of understanding on the mechanism of graphene growth on insulating surfaces greatly hinders the progress. Here, by using first-principles calculation, we systematically explored the absorption of various carbon species CHx (x = 0, 1, 2, 3, 4) on three typical insulating substrates [h-BN, sapphire, and quartz] and reveal that graphene growth on an insulating surface is dominated by the reaction of active carbon species with the hydrogen-passivated graphene edges and thus is less sensitive to the type of the substrate. The dominating gas phase precursor, CH3, plays two key roles in graphene CVD growth on an insulating substrate: (i) to feed the graphene growth and (ii) to remove excessive hydrogen atoms from the edge of graphene. The threshold reaction barriers for the growth of graphene armchair (AC) and zigzag (ZZ) edges were calculated as 3.00 and 1.94 eV, respectively; thus the ZZ edge grows faster than the AC one. Our theory successfully explained why the circumference of a graphene island grown on insulating substrates is generally dominated by AC edges, which is a long-standing puzzle of graphene growth. In addition, the very slow graphene growth rate on an insulating substrate is calculated and agrees well with existing experimental observations. The comprehensive insights on the graphene growth on insulating surfaces at the atomic scale provide guidance on the experimental design for high-quality graphene growth on insulating substrates.
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Affiliation(s)
- Ting Cheng
- College of Chemistry and Molecular Engineering, Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea
| | - Zhirong Liu
- College of Chemistry and Molecular Engineering, Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
| | - Zhongfan Liu
- College of Chemistry and Molecular Engineering, Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
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Wan X, Miao X, Yao J, Wang S, Shao F, Xiao S, Zhan R, Chen K, Zeng X, Gu X, Xu J. In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet-Printed Aqueous Precursors. Adv Mater 2021; 33:e2100260. [PMID: 33734516 DOI: 10.1002/adma.202100260] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2021] [Revised: 02/11/2021] [Indexed: 06/12/2023]
Abstract
Chemical vapor deposition (CVD) has been widely used to synthesize high-quality 2D transition-metal dichalcogenides (TMDCs) from different precursors. At present, quantitative control of the precursor with high precision and good repeatability is still challenging. Moreover, the process to synthesize TMDCs with designed patterns is complicated. Here, by using an industrial inkjet-printer, an in situ aqueous precursor with robust usage control at the picogram (10-12 g) level is achieved, and by precisely tuning the inkjet-printing parameters, followed by a rapid heating process, large-area patterned TMDC films with centimeter size and good thickness controllability, as well as heterostructures of the TMDCs, are achieved facilely, and high-quality single-domain monolayer TMDCs with millimeter-size can be easily synthesized within 30 s (corresponding to a growth rate up to 36.4 µm s-1 ). The resulting monolayer MoS2 and MoSe2 exhibits excellent electronic properties with carrier mobility up to 21 and 54 cm2 V-1 s-1 , respectively. The study paves a simple and robust way for the in situ ultrafast and patterned growth of high-quality TMDCs and heterostructures with promising industrialization prospects. Moreover, this ultrafast and green method can be easily used for synthesis of other 2D materials with slight modification.
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Affiliation(s)
- Xi Wan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Xin Miao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Jie Yao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Shuai Wang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Feng Shao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Runze Zhan
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Kun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Xiaoliang Zeng
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, 999077, P. R. China
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Shariare MH, Masum AA, Alshehri S, Alanazi FK, Uddin J, Kazi M. Preparation and Optimization of PEGylated Nano Graphene Oxide-Based Delivery System for Drugs with Different Molecular Structures Using Design of Experiment (DoE). Molecules 2021; 26:1457. [PMID: 33800115 PMCID: PMC7962195 DOI: 10.3390/molecules26051457] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2021] [Revised: 02/23/2021] [Accepted: 02/26/2021] [Indexed: 12/03/2022] Open
Abstract
Graphene oxide (GO), due to its 2D planar structure and favorable physical and chemical properties, has been used in different fields including drug delivery. This study aimed to investigate the impact of different process parameters on the average size of drug-loaded PEGylated nano graphene oxide (NGO-PEG) particles using design of experiment (DoE) and the loading of drugs with different molecular structures on an NGO-PEG-based delivery system. GO was prepared from graphite, processed using a sonication method, and functionalized using PEG 6000. Acetaminophen (AMP), diclofenac (DIC), and methotrexate (MTX) were loaded onto NGO-PEG particles. Drug-loaded NGO-PEG was then characterized using dynamic light scattering (DLS), Fourier transform infrared (FTIR), scanning electron microscopy (SEM), differential scanning calorimetry (DSC), XRD. The DLS data showed that the drug-loaded NGO-PEG suspensions were in the size range of 200 nm-1.3 µm. The sonication time and the stirring rate were found to be the major process parameters which affected the average size of the drug-loaded NGO-PEG. FTIR, DSC, XRD, and SEM demonstrated that the functionalization or coating of the NGO occurred through physical interaction using PEG 6000. Methotrexate (MTX), with the highest number of aromatic rings, showed the highest loading efficiency of 95.6% compared to drugs with fewer aromatic rings (diclofenac (DIC) 70.5% and acetaminophen (AMP) 65.5%). This study suggests that GO-based nano delivery systems can be used to deliver drugs with multiple aromatic rings with a low water solubility and targeted delivery (e.g., cancer).
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Affiliation(s)
- Mohammad Hossain Shariare
- Department of Pharmaceutical Sciences, North South University, Dhaka 1229, Bangladesh; (M.H.S.); (A.-A.M.)
| | - Abdullah-Al Masum
- Department of Pharmaceutical Sciences, North South University, Dhaka 1229, Bangladesh; (M.H.S.); (A.-A.M.)
| | - Sultan Alshehri
- Department of Pharmaceutics, College of Pharmacy, King Saud University, Riyadh 11451, Saudi Arabia; (S.A.); (F.K.A.)
| | - Fars K. Alanazi
- Department of Pharmaceutics, College of Pharmacy, King Saud University, Riyadh 11451, Saudi Arabia; (S.A.); (F.K.A.)
| | - Jamal Uddin
- Center for Nanotechnology, Department of Natural Sciences, Coppin State University, Baltimore, MD 21216, USA;
| | - Mohsin Kazi
- Department of Pharmaceutics, College of Pharmacy, King Saud University, Riyadh 11451, Saudi Arabia; (S.A.); (F.K.A.)
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50
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Zhang Y, Huang D, Duan Y, Chen H, Tang L, Shi M, Li Z, Shi H. Batch production of uniform graphene films via controlling gas-phase dynamics in confined space. Nanotechnology 2021; 32:105603. [PMID: 33227718 DOI: 10.1088/1361-6528/abcceb] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Batch production of continuous and uniform graphene films is critical for the application of graphene. Chemical vapor deposition (CVD) has shown great promise for mass producing high-quality graphene films. However, the critical factors affected the uniformity of graphene films during the batch production need to be further studied. Herein, we propose a method for batch production of uniform graphene films by controlling the gaseous carbon source to be uniformly distributed near the substrate surface. By designing the growth space of graphene into a rectangular channel structure, we adjusted the velocity of feedstock gas flow to be uniformly distributed in the channel, which is critical for uniform graphene growth. The monolayer graphene film grown inside the rectangular channel structure shows high uniformity with average sheet resistance of 345 Ω sq-1 without doping. The experimental and simulation results show that the placement of the substrates during batch growth of graphene films will greatly affect the distribution of gas-phase dynamics near the substrate surface and the growth process of graphene. Uniform graphene films with large-scale can be prepared in batches by adjusting the distribution of gas-phase dynamics.
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Affiliation(s)
- Yongna Zhang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
| | - Deping Huang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
| | - Yinwu Duan
- Chongqing Engineering Research Center of Graphene Film Manufacturing, Chongqing 401329, People's Republic of China
| | - Hui Chen
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
| | - Linlong Tang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
| | - Mingquan Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
| | - Zhancheng Li
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
| | - Haofei Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
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