Photoexcited Hot Electron Catalysis in Plasmon-Resonant Grating Structures with Platinum, Nickel, and Ruthenium Coatings

We report the electrochemical potential dependence of photocatalysis produced by hot electrons in plasmon-resonant grating structures. Here, corrugated metal surfaces with a period of 520 nm are illuminated with 785 nm wavelength laser light swept as a function of incident angle. At incident angles corresponding to plasmon-resonant excitation, we observe sharp peaks in the electrochemical photocurrent and dips in the photoreflectance consistent with the conditions under which there is wavevector matching between the incident light and the spacing between the lines in the grating. In addition to the bare plasmonic metal surface (i.e., Au), which is catalytically inert, we have measured grating structures with a thin layer of Pt, Ru, and Ni catalyst coatings. For the bare Au grating, we observe that the plasmon-resonant photocurrent remains relatively featureless over the applied potential range from -0.8 to +1.2 V vs NHE. For the Pt-coated grating, we observe a sharp peak around -0.3 V vs NHE, three times larger than the bare Au grating, and near complete suppression of the oxidation half-reaction, reflecting the reducing nature of Pt as a good hydrogen evolution reaction catalyst. The photocurrent associated with the Pt-coated grating is less noisy and produces higher photocurrents than the bare Au grating due to the faster kinetics (i.e., charge transfer) associated with the Pt-coated surface. The plasmon-resonant grating structures enable us to compare plasmon-resonant excitation with that of bulk metal interband absorption simply by rotating the polarization of the light while leaving all other parameters of the experiment fixed (i.e., wavelength, potential, electrochemical solution, sample surface, etc.). A 64X plasmon-resonant enhancement (i.e., p-to-s polarized photocurrent ratio) is observed for the Pt-coated grating compared to 28X for the bare grating. The nickel-coated grating shows an increase in the hot-electron photocurrent enhancement in both oxidation and reduction half-reactions. Similarly, Ru-coated gratings show an increase in hot-electron photocurrents in the oxidation half-reaction compared to the bare Au grating. Plasmon-resonant enhancement factors of 36X and 15X are observed in the p-to-s polarized photocurrent ratio for the Ni and Ru gratings, respectively.

Voltage-Induced Inversion of Band Bending and Photovoltages at Semiconductor/Liquid Interfaces

At semiconductor/liquid interfaces, the surface potential and photovoltages are produced by a combination of band bending and quasi-Fermi-level splitting at the semiconductor surface, which are usually treated in a qualitative fashion. As such, it is important to develop quantitative metrics for the band energies and photovoltaics at these interfaces. Here, we present a spectroscopic method for monitoring the photovoltages produced at semiconductor/liquid junctions. The surface reporter molecule mercaptobenzonitrile (MBN) is functionalized on the photoelectrode surface (p-type silicon) and is measured using in situ surface-enhanced Raman scattering (SERS) spectroscopy with a water immersion lens under electrochemical working conditions. In particular, the vibrational frequency of the C≡N stretch mode (ωCN) around 2225 cm-1 is sensitive to the local electric field in solution at the electrode/electrolyte interface via the vibrational Stark effect. Over the applied potential range from -0.8 to 0.6 V vs Ag/AgCl, we observe ωCN to increase from 2220 to 2229 cm-1 (at low laser power). As the incident laser power is increased from 83.5 μW to 13.3 mW, we observe additional shifts of ΔωCN = ±1 cm-1, corresponding to photovoltages produced at the semiconductor/liquid interface ΔV = ±0.2 V. Based on Mott-Schottky measurements, the flat band potential (FBP) occurs at -0.39 V vs Ag/AgCl. For applied potentials above the FBP, we observe ΔωCN > 0 (i.e., blue-shifts ∼1 cm-1) corresponding to positive photovoltages, whereas for applied potentials below the flat band potential, we observe ΔωCN < 0 (i.e., red-shifts ∼1 cm-1) corresponding to negative photovoltages. These spectroscopic observations reveal voltage-induced changes in the band bending at the semiconductor/liquid junction that, thus far, have been difficult to measure.

Measuring Local pKa and pH Using Surface Enhanced Raman Spectroscopy of 4-Mercaptobenzoic Acid

We report spectroscopic measurements of the local pH and pKa at an electrode/electrolyte interface using surface enhanced Raman scattering (SERS) spectroscopy of 4-mercaptobenzoic acid (4-MBA). In acidic and basic solutions, the protonated and deprotonated carboxyl functional groups at the electrode surface exist in the solution as -COOH and -COO-, which have different Raman active vibrational features at around 1697 and 1414 cm-1, respectively. In pH neutral water, as the applied electrochemical potential is varied from negative to positive, the acidic form of the 4-MBA (i.e., -COOH) decreases in Raman intensity and the basic form (i.e., -COO-) increases in Raman intensity. The change in local ion concentration is due to the application of electrochemical potentials and the accumulation of ions near the electrode surface. Under various applied potentials, the ratio of 1697 and 1587 cm-1 (pH-independent) peak areas spans the range between 0.7 and 0, and the ratio of the 1414 and 1587 cm-1 peak areas ranges from 0 to 0.3. By fitting these data to a normalized sigmoid function, we obtain the percentage of surface protonation/deprotonation, which can be related to the pKa and pH of the system. Thus, we can measure the local pKa at the electrode surface using the surface enhanced Raman signal of the 4-MBA.

Dynamic Study of Intercalation/Deintercalation of Ionic Liquids in Multilayer Graphene Using an Alternating Current Raman Spectroscopy Technique

We report Raman spectra and infrared (IR) imaging collected during the intercalation-deintercalation half cycles in a multilayer graphene (MLG) device (∼100 layers) operating at 0.2-10 Hz. The device consists of a MLG/alumina membrane/copper stack, in which the alumina membrane is filled with ionic liquid [DEME][TFSI], forming an electrochemical cell. Upon the application of a positive voltage, the TFSI- anions intercalate into the interstitial spaces in the MLG. The incident laser light is modulated using an optical chopper wheel that is synchronized with (and delayed with respect to) a 0.2-10 Hz alternating current (AC) voltage signal. Raman spectra taken just 200 ms apart show the emergence and disappearance of the intercalated G band mode at around 1610 cm-1. By integration of over hundreds of cycles, a significant Raman signal can be obtained. The intercalation/deintercalation is also monitored with thermal imaging via voltage-induced changes in the carrier density, complex dielectric function ε(ω), and thermal emissivity of the device.

Plasmon-Enhanced Photocatalytic CO2 Reduction for Higher-Order Hydrocarbon Generation Using Plasmonic Nano-Finger Arrays

The carbon dioxide reduction reaction (CO2RR) is a promising method to both reduce greenhouse gas carbon dioxide (CO₂) concentrations and provide an alternative to fossil fuel by converting water and CO₂ into high-energy-density chemicals. Nevertheless, the CO2RR suffers from high chemical reaction barriers and low selectivity. Here we demonstrate that 4 nm gap plasmonic nano-finger arrays provide a reliable and repeatable plasmon-resonant photocatalyst for multiple-electrons reactions: the CO2RR to generate higher-order hydrocarbons. Electromagnetics simulation shows that hot spots with 10,000 light intensity enhancement can be achieved using nano-gap fingers under a resonant wavelength of 638 nm. From cryogenic ¹H-NMR spectra, formic acid and acetic acid productions are observed with a nano-fingers array sample. After 1 h laser irradiation, we only observe the generation of formic acid in the liquid solution. While increasing the laser irradiation period, we observe both formic and acetic acid in the liquid solution. We also observe that laser irradiation at different wavelengths significantly affected the generation of formic acid and acetic acid. The ratio, 2.29, of the product concentration generated at the resonant wavelength 638 nm and the non-resonant wavelength 405 nm is close to the ratio, 4.93, of the generated hot electrons inside the TiO₂ layer at different wavelengths from the electromagnetics simulation. This shows that product generation is related to the strength of localized electric fields.

Direct In Situ Measurement of Quantum Efficiencies of Charge Separation and Proton Reduction at TiO2-Protected GaP Photocathodes

Photoelectrochemical solar fuel generation at the semiconductor/liquid interface consists of multiple elementary steps, including charge separation, recombination, and catalytic reactions. While the overall incident light-to-current conversion efficiency (IPCE) can be readily measured, identifying the microscopic efficiency loss processes remains difficult. Here, we report simultaneous in situ transient photocurrent and transient reflectance spectroscopy (TRS) measurements of titanium dioxide-protected gallium phosphide photocathodes for water reduction in photoelectrochemical cells. Transient reflectance spectroscopy enables the direct probe of the separated charge carriers responsible for water reduction to follow their kinetics. Comparison with transient photocurrent measurement allows the direct probe of the initial charge separation quantum efficiency (ϕ_CS) and provides support for a transient photocurrent model that divides IPCE into the product of quantum efficiencies of light absorption (ϕ_abs), charge separation (ϕ_CS), and photoreduction (ϕ_red), i.e., IPCE = ϕ_absϕ_CSϕ_red. Our study shows that there are two general key loss pathways: recombination within the bulk GaP that reduces ϕ_CS and interfacial recombination at the junction that decreases ϕ_red. Although both loss pathways can be reduced at a more negative applied bias, for GaP/TiO₂, the initial charge separation loss is the key efficiency limiting factor. Our combined transient reflectance and photocurrent study provides a time-resolved view of microscopic steps involved in the overall light-to-current conversion process and provides detailed insights into the main loss pathways of the photoelectrochemical system.

Plasma-enhanced electrostatic precipitation of diesel exhaust particulates using nanosecond high voltage pulse discharge for mobile source emission control

This study reports enhancement in the electrostatic precipitation (ESP) of diesel engine exhaust particulates using high voltage nanosecond pulse discharge in conjunction with a negative direct current (DC) bias voltage. The high voltage (20 kV) nanosecond pulses produce ion densities that are several orders of magnitude higher than those in the corona produced by a standard DC-only ESP. This plasma-enhanced electrostatic precipitator (PE-ESP) demonstrated 95 % remediation of PM and consumes less than 1 % of the engine power (i.e., 37 kW diesel engine at 75 % load). While the DC-only ESP remediation increases linearly with applied voltage, the plasma-enhanced ESP remains approximately constant over the applied range of negative DC biases. Numerical simulations of the PE-ESP process agree with the DC-only experimental results and enable us to verify the charge-based mechanism of enhancement provided by the nanosecond high voltage pulse plasma. Two different reactor configurations with different flow rates yielded the same remediation values despite one having half the flow rate of the other. This indicates that the reactor can be made even smaller without sacrificing performance. Here, this study finds that the plasma enhancement enables high remediation values at low DC voltages and smaller ESP reactors to be made with high remediation.

Harvesting Planck radiation for free-space optical communications in the long-wave infrared band

We demonstrate a free-space optical communication link with an optical transmitter that harvests naturally occurring Planck radiation from a warm body and modulates the emitted intensity. The transmitter exploits an electro-thermo-optic effect in a multilayer graphene device that electrically controls the surface emissivity of the device resulting in control of the intensity of the emitted Planck radiation. We design an amplitude-modulated optical communication scheme and provide a link budget for communications data rate and range based on our experimental electro-optic characterization of the transmitter. Finally, we present an experimental demonstration achieving error-free communications at 100 bits per second over laboratory scales.

In Situ Investigation of Ultrafast Dynamics of Hot Electron-Driven Photocatalysis in Plasmon-Resonant Grating Structures

Understanding the relaxation and injection dynamics of hot electrons is crucial to utilizing them in photocatalytic applications. While most studies have focused on hot carrier dynamics at metal/semiconductor interfaces, we study the in situ dynamics of direct hot electron injection from metal to adsorbates. Here, we report a hot electron-driven hydrogen evolution reaction (HER) by exciting the localized surface plasmon resonance (LSPR) in Au grating photoelectrodes. In situ ultrafast transient absorption (TA) measurements show a depletion peak resulting from hot electrons. When the sample is immersed in solution under -1 V applied potential, the extracted electron-phonon interaction time decreases from 0.94 to 0.67 ps because of additional energy dissipation channels. The LSPR TA signal is redshifted with delay time because of charge transfer and subsequent change in the dielectric constant of nearby solution. Plateau-like photocurrent peaks appear when exciting a 266 nm linewidth grating with p-polarized (on resonance) light, accompanied by a similar profile in the measured absorptance. Double peaks in the photocurrent measurement are observed when irradiating a 300 nm linewidth grating. The enhancement factor (i.e., reaction rate) is 15.6× between p-polarized and s-polarized light for the 300 nm linewidth grating and 4.4× for the 266 nm linewidth grating. Finite-difference time domain (FDTD) simulations show two resonant modes for both grating structures, corresponding to dipolar LSPR modes at the metal/fused silica and metal/water interfaces. To our knowledge, this is the first work in which LSPR-induced hot electron-driven photochemistry and in situ photoexcited carrier dynamics are studied on the same plasmon resonance structure with and without adsorbates.

Nanoscale TiO2 Protection Layer Enhances the Built-In Field and Charge Separation Performance of GaP Photoelectrodes

Nanoscale oxide layer protected semiconductor photoelectrodes show enhanced stability and performance for solar fuels generation, although the mechanism for the performance enhancement remains unclear due to a lack of understanding of the microscopic interfacial field and its effects. Here, we directly probe the interfacial fields at p-GaP electrodes protected by n-TiO₂ and its effect on charge carriers by transient reflectance spectroscopy. Increasing the TiO₂ layer thickness from 0 to 35 nm increases the field in the GaP depletion region, enhancing the rate and efficiency of interfacial electron transfer from the GaP to TiO₂ on the ps time scale as well as retarding interfacial recombination on the microsecond time scale. This study demonstrates a general method for providing a microscopic view of the photogenerated charge carrier's pathway and loss mechanisms from the bulk of the electrode to the long-lived separated charge at the interface that ultimately drives the photoelectrochemical reactions.

Asymmetric response of interfacial water to applied electric fields

Our understanding of the dielectric response of interfacial water, which underlies the solvation properties and reaction rates at aqueous interfaces, relies on the linear response approximation: an external electric field induces a linearly proportional polarization. This implies antisymmetry with respect to the sign of the field. Atomistic simulations have suggested, however, that the polarization of interfacial water may deviate considerably from the linear response. Here we present an experimental study addressing this issue. We measured vibrational sum-frequency generation spectra of heavy water (D₂O) near a monolayer graphene electrode, to study its response to an external electric field under controlled electrochemical conditions. The spectra of the OD stretch show a pronounced asymmetry for positive versus negative electrode charge. At negative charge below 5 × 10¹² electrons per square centimetre, a peak of the non-hydrogen-bonded OD groups pointing towards the graphene surface is observed at a frequency of 2,700 per centimetre. At neutral or positive electrode potentials, this 'free-OD' peak disappears abruptly, and the spectra display broad peaks of hydrogen-bonded OD species (at 2,300-2,650 per centimetre). Miller's rule¹ connects the vibrational sum-frequency generation response to the dielectric constant. The observed deviation from the linear response for electric fields of about ±3 × 10⁸ volts per metre calls into question the validity of treating interfacial water as a simple dielectric medium.

Monitoring Reaction Intermediates in Plasma-Driven SO2, NO, and NO2 Remediation Chemistry Using In Situ SERS Spectroscopy

In situ surface-enhanced Raman scattering (SERS) spectroscopy is used to identify the key reaction intermediates during the plasma-based removal of NO and SO₂ under dry and wet conditions on Ag nanoparticles. Density functional theory (DFT) calculations are used to confirm the experimental observations by calculating the vibrational modes of the surface-bound intermediate species. Here, we provide spectroscopic evidence that the wet plasma increases the SO₂ and the NO_x removal through the formation of highly reactive OH radicals, driving the reactions to H₂SO₄ and HNO₃, respectively. We observed the formation of SO₃ and SO₄ species in the SO₂ wet-plasma-driven remediation, while in the dry plasma, we only identified SO₃ adsorbed on the Ag surface. During the removal of NO in the dry and wet plasma, both NO₂ and NO₃ species were observed on the Ag surface; however, the concentration of NO₃ species was enhanced under wet-plasma conditions. By closing the loop between the experimental and DFT-calculated spectra, we identified not only the adsorbed species associated with each peak in the SERS spectra but also their orientation and adsorption site, providing a detailed atomistic picture of the chemical reaction pathway and surface interaction chemistry.

Direct Measurement of Water-Assisted Ion Desorption and Solvation on Isolated Carbon Nanotubes

We have investigated the change in mean residence time of gaseous ions adsorbed on the surface of suspended carbon nanotube field-effect transistors (CNT-FETs) with and without native surface water layers that exists in atmospheric conditions. Devices were characterized electrically before and after dehydration by thermal, dry gas, and vacuum desiccation and in each scenario were found to have substantially higher mean ion residence times. It is proposed that water molecules native to the CNT surface in ambient conditions provide a reduction pathway for incoming gaseous ions, yielding hydronium ions (H₃O⁺). This is supported by the appearance of frequent clustered readsorption events in the presence of surface water, caused by the rapid hopping of H⁺ between the device surface and the lowest water layer, which are not present in data collected from desiccated devices. After desiccation of the device, a thermal trial was conducted to determine the adsorption energy of N₂⁺ ions on the CNT surface. This work has profound implications for our understanding of wetting in one-dimensional systems and the chemistry of ion chemisorption and solvation on the surfaces of materials in general.

Probing the Mechanisms of Strong Fluorescence Enhancement in Plasmonic Nanogaps with Sub-nanometer Precision

Plasmon-enhanced fluorescence is demonstrated in the vicinity of metal surfaces due to strong local field enhancement. Meanwhile, fluorescence quenching is observed as the spacing between fluorophore molecules and the adjacent metal is reduced below a threshold of a few nanometers. Here, we introduce a technology, placing the fluorophore molecules in plasmonic hotspots between pairs of collapsible nanofingers with tunable gap sizes at sub-nanometer precision. Optimal gap sizes with maximum plasmon enhanced fluorescence are experimentally identified for different dielectric spacer materials. The ultrastrong local field enhancement enables simultaneous detection and characterization of sharp Raman fingerprints in the fluorescence spectra. This platform thus enables in situ monitoring of competing excitation enhancement and emission quenching processes. We systematically investigate the mechanisms behind fluorescence quenching. A quantum mechanical model is developed which explains the experimental data and will guide the future design of plasmon enhanced spectroscopy applications.

Enhanced Low-Temperature Thermoelectric Performance in (PbSe)1+δ(VSe2)1 Heterostructures due to Highly Correlated Electrons in Charge Density Waves

We explore the effect of charge density wave (CDW) on the in-plane thermoelectric transport properties of (PbSe)_1+δ(VSe₂)₁ and (PbSe)_1+δ(VSe₂)₂ heterostructures. In (PbSe)_1+δ(VSe₂)₁ we observe an abrupt 86% increase in the Seebeck coefficient, 245% increase in the power factor, and a slight decrease in resistivity over the CDW transition. This behavior is not observed in (PbSe)_1+δ(VSe₂)₂ and is rather unusual compared to the general trend observed in other materials. The abrupt transition causes a deviation from the Mott relationship through correlated electron states. Raman spectra of the (PbSe)_1+δ(VSe₂)₁ material show the emergence of additional peaks below the CDW transition temperature associated with VSe₂ material. Temperature-dependent in-plane X-ray diffraction (XRD) spectra show a change in the in-plane thermal expansion of VSe₂ in (PbSe)_1+δ(VSe₂)₁ due to lattice distortion. The increase in the power factor and decrease in the resistivity due to CDW suggest a potential mechanism for enhancing the thermoelectric performance at the low temperature region.

Formation of Brightly Luminescent MoS2 Nanoislands from Multilayer Flakes via Plasma Treatment and Laser Exposure

A robust and reliable method for enhancing the photoluminescence (PL) of multilayer MoS₂ is demonstrated using an oxygen plasma treatment process followed by laser exposure. Here, the plasma and laser treatments result in an indirect-to-direct band gap transition. The oxygen plasma creates a slight decoupling of the layers and converts some of the MoS₂ to MoO₃. Subsequent laser irradiation further oxidizes the MoS₂ to MoO₃, as confirmed via X-ray photoelectron spectroscopy, and results in localized regions of brightly luminescent MoS₂ monolayer triangular islands as seen in high-resolution transmission electron microscopy images. The PL lifetimes are found to decrease from 494 to 190 ps after plasma and laser treatment, reflecting the smaller size of the MoS₂ grains/regions. Atomic force microscopic imaging shows a 2 nm increase in thickness of the laser-irradiated regions, which provides further evidence of the MoS₂ being converted to MoO₃.

Hot Electron Driven Photocatalysis on Plasmon-Resonant Grating Nanostructures

We demonstrate the hot electron injection of photoexcited carriers in an Ag-based plasmon resonant grating structure. By varying the incident angle of irradiation, sharp dips are observed in the reflectance with p-polarized light (electric field perpendicular to grating lines) when there is wavevector matching between the incident light and the plasmon resonant modes of the grating and no angle dependence is observed with s-polarized light. This configuration enables us to compare photoelectrochemical current produced by plasmon resonant excitation with that of bulk metal interband absorption simply by rotating the polarization of the incident light while keeping all other parameters of the measurement fixed. With 633 nm light, we observed a 12-fold enhancement in the photocurrent (i.e., reaction rate) between resonant and nonresonant polarizations at incident angles of ±7.6° from normal. At 785 nm irradiation, we observed similar resonant profiles to those obtained with 633 nm wavelength light but with a 44-fold enhancement factor. Using 532 nm light, we observed two resonant peaks (with approximately 10× enhancement) in the photocurrent at 19.4° and 28.0° incident angles, each corresponding to higher order modes in the grating with more nodes per period. The lower enhancement factors observed at shorter wavelengths are attributed to interband transitions, which provide a damping mechanism for the plasmon resonance. Finite difference time domain (FDTD) simulations of these grating structures confirm the resonant profiles observed in the angle-dependent spectra of these gratings and provide a detailed picture of the electric field profiles on and off resonance.

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., V_g1 = -V_g2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm² (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between V_g1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |V_g| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.

Tunable Onset of Hydrogen Evolution in Graphene with Hot Electrons

Here, we show that the turn-on voltage for the hydrogen evolution reaction on a graphene surface can be tuned in a semiconductor-insulator-graphene (SIG) device immersed in a solution. Specifically, it is shown that the hydrogen evolution reaction (HER) onset for the graphene can shift by >0.8 V by application of a voltage across a graphene-Al₂O₃-silicon junction. We show that this shift occurs due to the creation of a hot electron population in graphene due to tunneling from the Si to graphene. Through control experiments, we show that the presence of the graphene is necessary for this behavior. By analyzing the silicon, graphene, and solution current components individually, we find an increase in the silicon current despite a fixed graphene-silicon voltage, corresponding to an increase in the HER current. This additional silicon current appears to directly drive the electrochemical reaction, without modifying the graphene current. We term this current "direct injection current" and hypothesize that this current occurs due to electrons injected from the silicon into graphene that drives the HER before any electron-electron scattering occurs in the graphene. To further determine whether hot electrons injected at different energies could explain the observed total solution current, the nonequilibrium electron dynamics was studied using a 2D ensemble Monte Carlo Boltzmann transport equation (MCBTE) solver. By rigorously considering the key scattering mechanisms, we show that the injected hot electrons can significantly increase the available electron flux at high energies. These results show that semiconductor-insulator-graphene devices are a platform which can tune the electrochemical reaction rate via multiple mechanisms.

First results on transient plasma-based remediation of nanoscale particulate matter in restaurant smoke emissions

Recent studies have shown that nanoscale particulate matter produced in commercial charbroiling processes represents a serious health hazard and has been linked to various forms of cancer and cardiopulmonary disease. In this study, we propose a highly effective method for treating restaurant smoke emissions using a transient pulsed plasma reactor produced by nanosecond high voltage pulses. We measure the size and relative mass distributions of particulate matter (PM) produced in commercial charbroiling processes (e.g., cooking of hamburger meat) both with and without the plasma treatment. Here, the plasma discharge is produced in a 3" diameter cylindrical reactor with a 5-10 ns high voltage (17 kV) pulse generator. The distribution of untreated nanoparticle sizes is peaked around 125-150 nm in diameter, as measured using a scanning mobility particle sizer (SMPS) spectrometer. With plasma treatment, we observe up to a 55-fold reduction in relative particle mass and a significant reduction in the nanoparticle size distribution using this method. The effectiveness of the nanoscale PM remediation increases with both the pulse repetition rate and pulse voltage, demonstrating the scalability of this approach for treating particulate matter at higher flow rates and larger diameter reactors.

Measuring Local Electric Fields and Local Charge Densities at Electrode Surfaces Using Graphene-Enhanced Raman Spectroscopy (GERS)-Based Stark-Shifts

We report spectroscopic measurements of the local electric fields and local charge densities at electrode surfaces using graphene-enhanced Raman spectroscopy (GERS) based on the Stark-shifts of surface-bound molecules and the G band frequency shift in graphene. Here, monolayer graphene is used as the working electrode in a three-terminal potentiostat while Raman spectra are collected in situ under applied electrochemical potentials using a water immersion lens. First, a thin layer (1 Å) of copper(II) phthalocyanine (CuPc) molecules are deposited on monolayer graphene by thermal evaporation. GERS spectra are then taken in an aqueous solution as a function of the applied electrochemical potential. The shifts in vibrational frequencies of the graphene G band and CuPc are obtained simultaneously and correlated. The upshifts in the G band Raman mode are used to determine the free carrier density in the graphene sheet under these applied potentials. Of the three dominant peaks in the Raman spectra of CuPc (i.e., 1531, 1450, and 1340 cm^-1), only the 1531 cm^-1 peak exhibits Stark-shifts and can, thus, be used to report the local electric field strength at the electrode surface under electrochemical working conditions. Between applied electrochemical potentials from -0.8 V to 0.8 V vs NHE, the free carrier density in the graphene electrode spans a range from -4 × 10¹² cm^-2 to 2 × 10¹² cm^-2. Corresponding Stark-shifts in the CuPc peak around 1531 cm^-1 are observed up to 1.0 cm^-1 over a range of electric field strengths between -3.78 × 10⁶ and 1.85 × 10⁶ V/cm. Slightly larger Stark-shifts are observed in a 1 M KCl solution, compared to those observed in DI water, as expected based on the higher ion concentration of the electrolyte. Based on our data, we determine the Stark shift tuning rate to be 0.178 cm^-1/ (10⁶ V/cm), which is relatively small due to the planar nature of the CuPc molecule, which largely lies perpendicular to the electric field at this electrode surface. Computational simulations using density functional theory (DFT) predict similar Stark shifts and provide a detailed atomistic picture of the electric field-induced perturbations to the surface-bound CuPc molecules.

High Quantum Efficiency Hot Electron Electrochemistry

Using hot electrons to drive electrochemical reactions has drawn considerable interest in driving high-barrier reactions and enabling efficient solar to fuel conversion. However, the conversion efficiency from hot electrons to electrochemical products is typically low due to high hot electron scattering rates. Here, it is shown that the hydrogen evolution reaction (HER) in an acidic solution can be efficiently modulated by hot electrons injected into a thin gold film by an Au-Al₂O₃-Si metal-insulator-semiconductor (MIS) junction. Despite the large scattering rates in gold, it is shown that the hot electron driven HER can reach quantum efficiencies as high as ∼85% with a shift in the onset of hydrogen evolution by ∼0.6 V. By simultaneously measuring the currents from the solution, gold, and silicon terminals during the experiments, we find that the HER rate can be decomposed into three components: (i) thermal electron, corresponding to the thermal electron distribution in gold; (ii) hot electron, corresponding to electrons injected from silicon into gold which drive the HER before fully thermalizing; and (iii) silicon direct injection, corresponding to electrons injected from Si into gold that drive the HER before electron-electron scattering occurs. Through a series of control experiments, we eliminate the possibility of the observed HER rate modulation coming from lateral resistivity of the thin gold film, pinholes in the gold, oxidation of the MIS device, and measurement circuit artifacts. Next, we theoretically evaluate the feasibility of hot electron injection modifying the available supply of electrons. Considering electron-electron and electron-phonon scattering, we track how hot electrons injected at different energies interact with the gold-solution interface as they scatter and thermalize. The simulator is first used to reproduce other published experimental pump-probe hot electron measurements, and then simulate the experimental conditions used here. These simulations predict that hot electron injection first increases the supply of electrons to the gold-solution interface at higher energies by several orders of magnitude and causes a peaked electron interaction with the gold-solution interface at the electron injection energy. The first prediction corresponds to the observed hot electron electrochemical current, while the second prediction corresponds to the observed silicon direct injection current. These results indicate that MIS devices offer a versatile platform for hot electron sources that can efficiently drive electrochemical reactions.

Resonant and Selective Excitation of Photocatalytically Active Defect Sites in TiO2

It has been known for several decades that defects are largely responsible for the catalytically active sites on metal and semiconductor surfaces. However, it is difficult to directly probe these active sites because the defects associated with them are often relatively rare with respect to the stoichiometric crystalline surface. In the work presented here, we demonstrate a method to selectively probe defect-mediated photocatalysis through differential alternating current (ac) photocurrent (PC) measurements. In this approach, electrons are photoexcited from the valence band to a relatively narrow distribution of subband gap states in TiO₂ and then subsequently to the ions in solution. Because of their limited number, these defect states fill up quickly, resulting in Pauli blocking, and are thereby undetectable under direct current or continuous wave excitation. In the method demonstrated here, the incident light is modulated with an optical chopper, whereas the PC is measured with a lock-in amplifier. Thin (5 nm) films of TiO₂ deposited by atomic layer deposition on various metal films, including Au, Cu, and Al, exhibit the same wavelength-dependent PC spectra, with a broad peak centered around 2.0 eV corresponding to the band-to-defect transition associated with the hydrogen evolution reaction (HER). While the UV-vis absorption spectra of these films show no features at 2.0 eV, photoluminescence (PL) spectra of these photoelectrodes show a similar wavelength dependence with a peak of around 2.0 eV, corresponding to the subband gap emission associated with these defect sites. As a control, alumina (Al₂O₃) films exhibit no PL or PC over the visible wavelength range. The ac PC plotted as a function of electrode potential shows a peak of around -0.4 to -0.1 V versus normal hydrogen electrode, as the monoenergetic defect states are tuned through a resonance with the HER potential. This approach enables the direct photoexcitation of catalytically active defect sites to be studied selectively without the interference of the continuum interband transitions or the effects of Pauli blocking, which is limited by the slow turnover time of the catalytically active sites, typically on the order of 1 μs. We believe that this general approach provides an important new way to study the role of defects in catalysis in an area where selective spectroscopic studies of these are few.

Hot electron-driven photocatalysis and transient absorption spectroscopy in plasmon resonant grating structures

We have developed a method to measure photocurrents produced by photoexcited hot electrons and holes in bulk metal films.

Monitoring Local Electric Fields at Electrode Surfaces Using Surface Enhanced Raman Scattering-Based Stark-Shift Spectroscopy during Hydrogen Evolution Reactions

We report the use of surface-enhanced Raman scattering (SERS) to measure the vibrational Stark shifts of surface-bound thiolated-benzonitrile molecules bound to an electrode surface during hydrogen evolution reactions (HERs). Here, the electrode surface consists of Au nanoislands deposited both with and without an underlying layer of monolayer graphene on a glass substrate. The Stark shifts observed in the nitrile (C-N) stretch frequency (around 2225 cm^-1) are used to report the local electric field strength at the electrode surface under electrochemical working conditions. Under positive (i.e., oxidative) applied potentials [vs normal hydrogen electrode (NHE)], we observe blue shifts of up to 7.6 cm^-1, which correspond to local electric fields of 22 mV/cm. Under negative applied potentials (vs NHE), the C-N stretch frequency is red-shifted by only about 1 cm^-1. This corresponds to a regime in which the electrochemical current increases exponentially in the hydrogen evolution process. Under these finite electrochemical currents, we estimate the voltage drop across the solution ( V = IR). Correcting for this voltage drop results in a highly linear electric field versus applied electrochemical voltage relation. Here, the onset potential for the HER lies around 0.2 V versus NHE and the point of zero charge (PZC) occurs at 0.04 V versus NHE, based on the capacitance-voltage ( C- V) profile. The solution field is obtained by comparing the C-N stretch frequency in solution with that obtained in air. By evaluating the local electric field strength at the PZC and the onset potential, we can separate the solution field from the reaction field (i.e., electrode field), respectively. At the onset of HER, the solution field is -0.8 mV/cm and the electrode field is -1.2 mV/cm. At higher ion concentrations, we observe similar electric field strengths and more linear E-field versus applied potential behavior because of the relatively low resistance of the solution, which results in negligible voltage drops ( V = IR).

Confined Liquid-Phase Growth of Crystalline Compound Semiconductors on Any Substrate

The growth of crystalline compound semiconductors on amorphous and non-epitaxial substrates is a fundamental challenge for state-of-the-art thin-film epitaxial growth techniques. Direct growth of materials on technologically relevant amorphous surfaces, such as nitrides or oxides results in nanocrystalline thin films or nanowire-type structures, preventing growth and integration of high-performance devices and circuits on these surfaces. Here, we show crystalline compound semiconductors grown directly on technologically relevant amorphous and non-epitaxial substrates in geometries compatible with standard microfabrication technology. Furthermore, by removing the traditional epitaxial constraint, we demonstrate an atomically sharp lateral heterojunction between indium phosphide and tin phosphide, two materials with vastly different crystal structures, a structure that cannot be grown with standard vapor-phase growth approaches. Critically, this approach enables the growth and manufacturing of crystalline materials without requiring a nearly lattice-matched substrate, potentially impacting a wide range of fields, including electronics, photonics, and energy devices.

Recent Progress on Stability and Passivation of Black Phosphorus

From a fundamental science perspective, black phosphorus (BP) is a canonical example of a material that possesses fascinating surface and electronic properties. It has extraordinary in-plane anisotropic electrical, optical, and vibrational states, as well as a tunable band gap. However, instability of the surface due to chemical degradation in ambient conditions remains a major impediment to its prospective applications. Early studies were limited by the degradation of black phosphorous surfaces in air. Recently, several robust strategies have been developed to mitigate these issues, and these novel developments can potentially allow researchers to exploit the extraordinary properties of this material and devices made out of it. Here, the fundamental chemistry of BP degradation and the tremendous progress made to address this issue are extensively reviewed. Device performances of encapsulated BP are also compared with nonencapsulated BP. In addition, BP possesses sensitive anisotropic photophysical surface properties such as excitons, surface plasmons/phonons, and topologically protected and Dirac semi-metallic surface states. Ambient degradation as well as any passivation method used to protect the surface could affect the intrinsic surface properties of BP. These properties and the extent of their modifications by both the degradation and passivation are reviewed.

Sensing local pH and ion concentration at graphene electrode surfaces using in situ Raman spectroscopy

We report a novel approach to probe the local ion concentration at graphene/water interfaces using in situ Raman spectroscopy. Here, the upshifts observed in the G band Raman mode under applied electrochemical potentials are used to determine the charge density in the graphene sheet. For voltages up to ±0.8 V vs. NHE, we observe substantial upshifts in the G band Raman mode by as much as 19 cm^-1, which corresponds to electron and hole carrier densities of 1.4 × 10¹³ cm^-2 and Fermi energy shifts of ±430 meV. The charge density in the graphene electrode is also measured independently using the capacitance-voltage characteristics (i.e., Q = CV), and is found to be consistent with those measured by Raman spectroscopy. From charge neutrality requirements, the ion concentration in solution per unit area must be equal and opposite to the charge density in the graphene electrode. Based on these charge densities, we estimate the local ion concentration as a function of electrochemical potential in both pure DI water and 1 M KCl solutions, which span a pH range from 3.8 to 10.4 for pure DI water and net ion concentrations of ±0.7 mol L^-1 for KCl under these applied voltages.

Probing Gap Plasmons Down to Subnanometer Scales Using Collapsible Nanofingers

Gap plasmonic nanostructures are of great interest due to their ability to concentrate light into small volumes. Theoretical studies, considering quantum mechanical effects, have predicted the optimal spatial gap between adjacent nanoparticles to be in the subnanometer regime in order to achieve the strongest possible field enhancement. Here, we present a technology to fabricate gap plasmonic structures with subnanometer resolution, high reliability, and high throughput using collapsible nanofingers. This approach enables us to systematically investigate the effects of gap size and tunneling barrier height. The experimental results are consistent with previous findings as well as with a straightforward theoretical model that is presented here.

Cross-Plane Seebeck Coefficient Measurement of Misfit Layered Compounds (SnSe)n(TiSe2)n (n = 1,3,4,5)

We report cross-plane thermoelectric measurements of misfit layered compounds (SnSe)_n(TiSe₂)_n (n = 1,3,4,5), approximately 50 nm thick. Metal resistance thermometers are fabricated on the top and bottom of the (SnSe)_n(TiSe₂)_n material to measure the temperature difference and heat transport through the material directly. By varying the number of layers in a supercell, n, we vary the interface density while maintaining a constant global stoichiometry. The Seebeck coefficient measured across the (SnSe)_n(TiSe₂)_n samples was found to depend strongly on the number of layers in the supercell (n). When n decreases from 5 to 1, the cross-plane Seebeck coefficient decreases from -31 to -2.5 μV/K, while the cross-plane effective thermal conductivity decreases by a factor of 2, due to increased interfacial phonon scattering. The cross-plane Seebeck coefficients of the (SnSe)_n(TiSe₂)_n are very different from the in-plane Seebeck coefficients, which are higher in magnitude and less sensitive to the number of layers in a supercell, n. We believe this difference is due to the different carrier types in the n-SnSe and p-TiSe₂ layers and the effect of tunneling on the cross-plane transport.

Broadband terahertz modulation in electrostatically-doped artificial trilayer graphene

We report a terahertz optical modulator consisting of randomly stacked trilayer graphene (TLG) deposited on an oxidized silicon substrate by means of THz-Time Domain Spectroscopy (THz-TDS). Here, the gate tuning of the Fermi level of the TLG provides the fundamental basis for the modulation of THz transmission. We measured a 15% change in the THz transmission of this device over a broad frequency range (0.6-1.6 THz). We also observed a strong absorption >80% in the time-domain signals and a frequency independence of the conductivity. Furthermore, unlike previous studies, we find that the underlying silicon substrate, which serves as a gate electrode for the graphene, also exhibits substantial modulation of the transmitted THz radiation under applied voltage biases.

Hot electron-driven photocatalytic water splitting

We report measurements of photocatalytic water splitting using Au films with and without TiO₂ coatings.

Nanoscopy reveals surface-metallic black phosphorus

Black phosphorus (BP) is an emerging two-dimensional material with intriguing physical properties. It is highly anisotropic and highly tunable by means of both the number of monolayers and surface doping. Here, we experimentally investigate and theoretically interpret the near-field properties of a-few-atomic-monolayer nanoflakes of BP. We discover near-field patterns of bright outside fringes and a high surface polarizability of nanofilm BP consistent with its surface-metallic, plasmonic behavior at mid-infrared frequencies <1176 cm^-1. We conclude that these fringes are caused by the formation of a highly polarizable layer at the BP surface. This layer has a thickness of ~1 nm and exhibits plasmonic behavior. We estimate that it contains free carriers in a concentration of n≈1.1 × 10²⁰ cm^-3. Surface plasmonic behavior is observed for 10-40 nm BP thicknesses but absent for a 4-nm BP thickness. This discovery opens up a new field of research and potential applications in nanoelectronics, plasmonics and optoelectronics.

Layer Control of WSe2 via Selective Surface Layer Oxidation

We report Raman and photoluminescence spectra of mono- and few-layer WSe2 and MoSe2 taken before and after exposure to a remote oxygen plasma. For bilayer and trilayer WSe2, we observe an increase in the photoluminescence intensity and a blue shift of the photoluminescence peak positions after oxygen plasma treatment. The photoluminescence spectra of trilayer WSe2 exhibit features of a bilayer after oxygen plasma treatment. Bilayer WSe2 exhibits features of a monolayer, and the photoluminescence of monolayer WSe2 is completely absent after the oxygen plasma treatment. These changes are observed consistently in more than 20 flakes. The mechanism of the changes observed in the photoluminescence spectra of WSe2 is due to the selective oxidation of the topmost layer. As a result, N-layer WSe2 is reduced to N-1 layers. Raman spectra and AFM images taken from the WSe2 flakes before and after the oxygen treatment corroborate these findings. Because of the low kinetic energy of the oxygen radicals in the remote oxygen plasma, the oxidation is self-limiting. By varying the process duration from 1 to 10 min, we confirmed that the oxidation will only affect the topmost layer of the WSe2 flakes. X-ray photoelectron spectroscopy shows that the surface layer WOx of the sample can be removed by a quick dip in KOH solution. Therefore, this technique provides a promising way of controlling the thickness of WSe2 layer by layer.

A Comparison of Photocurrent Mechanisms in Quasi-Metallic and Semiconducting Carbon Nanotube pn-Junctions

We present a comparative study of quasi-metallic (Eg ∼ 100 meV) and semiconducting (Eg ∼ 1 eV) suspended carbon nanotube pn-junctions introduced by electrostatic gating. While the built-in fields of the quasi-metallic carbon nanotubes (CNTs) are 1-2 orders of magnitude smaller than those of the semiconducting CNTs, their photocurrent is 2 orders of magnitude higher than the corresponding semiconducting CNT devices under the same experimental conditions. Here, the large exciton binding energy in semiconducting nanotubes (∼400 meV) makes it difficult for excitons to dissociate into free carriers that can contribute to an externally measured photocurent. As such, semiconducting nanotubes require a phonon to assist in the exciton dissociation process, in order to produce a finite photocurrent, while quasi-metallic nanotubes do not. The quasi-metallic nanotubes have much lower exciton binding energies (∼50 meV) as well as a continuum of electronic states to decay into and, therefore, do not require the absorption of a phonon in order to dissociate, making it much easier for these excitons to produce a photocurrent. We performed detailed simulations of the band energies in quasi-metallic and semiconducting nanotube devices in order to obtain the electric field profiles along the lengths of the nanotubes. These simulations predict maximum built-in electric field strengths of 2.3 V/μm for semiconducting and 0.032-0.22 V/μm for quasi-metallic nanotubes under the applied gate voltages used in this study.

Nanostructured Silicon Photocathodes for Solar Water Splitting Patterned by the Self-Assembly of Lamellar Block Copolymers

We studied a type of nanostructured silicon photocathode for solar water splitting, where one-dimensionally periodic lamellar nanopatterns derived from the self-assembly of symmetric poly(styrene-block-methyl methacrylate) block copolymers were incorporated on the surface of single-crystalline silicon in configurations with and without a buried metallurgical junction. The resulting nanostructured silicon photocathodes with the characteristic lamellar morphology provided suppressed front-surface reflection and increased surface area, which collectively contributed to the enhanced photocatalytic performance in the hydrogen evolution reaction. The augmented light absorption in the nanostructured silicon directly translated to the increase of the saturation current density, while the onset potential decreased with the etching depth because of the increased levels of surface recombination. The pp(+)-silicon photocathodes, compared to the n(+)pp(+)-silicon with a buried solid-state junction, exhibited a more pronounced shift of the current density-potential curves upon the introduction of the nanostructured surface owing to the corresponding increase in the liquid/silicon junction area. Systematic studies on the morphology, optical properties, and photoelectrochemical characteristics of nanostructured silicon photocathodes, in conjunction with optical modeling based on the finite-difference time-domain method, provide quantitative description and optimal design rules of lamellar-patterned silicon photocathodes for solar water splitting.

Imaging interfacial electrical transport in graphene-MoS2 heterostructures with electron-beam-induced-currents

Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS₂ heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Artificial Photosynthesis on TiO2-Passivated InP Nanopillars

Here, we report photocatalytic CO2 reduction with water to produce methanol using TiO2-passivated InP nanopillar photocathodes under 532 nm wavelength illumination. In addition to providing a stable photocatalytic surface, the TiO2-passivation layer provides substantial enhancement in the photoconversion efficiency through the introduction of O vacancies associated with the nonstoichiometric growth of TiO2 by atomic layer deposition. Plane wave-density functional theory (PW-DFT) calculations confirm the role of oxygen vacancies in the TiO2 surface, which serve as catalytically active sites in the CO2 reduction process. PW-DFT shows that CO2 binds stably to these oxygen vacancies and CO2 gains an electron (-0.897e) spontaneously from the TiO2 support. This calculation indicates that the O vacancies provide active sites for CO2 absorption, and no overpotential is required to form the CO2(-) intermediate. The TiO2 film increases the Faraday efficiency of methanol production by 5.7× to 4.79% under an applied potential of -0.6 V vs NHE, which is 1.3 V below the E(o)(CO2/CO2(-)) = -1.9 eV standard redox potential. Copper nanoparticles deposited on the TiO2 act as a cocatalyst and further improve the selectivity and yield of methanol production by up to 8-fold with a Faraday efficiency of 8.7%.

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.

Competing Photocurrent Mechanisms in Quasi-Metallic Carbon Nanotube pn Devices

Photodetectors based on quasi-metallic carbon nanotubes exhibit unique optoelectronic properties. Due to their small bandgap, photocurrent generation is possible at room temperature. The origin of this photocurrent is investigated to determine the underlying mechanism, which can be photothermoelectric effect or photovoltaic effect, depending on the bandgap magnitude of the quasi-metallic nanotube.

Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS₂ and Metal/WSe₂ Heterojunctions

Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds and therefore make more "ideal" Schottky junctions than bulk semiconductors, which produce Fermi energy pinning and recombination centers at the interface with bulk metals, inhibiting charge transfer. Here, we observe a more than 10× enhancement in the indirect band gap photoluminescence of transition metal dichalcogenides (TMDCs) deposited on various metals (e.g., Cu, Au, Ag), while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2 and subsequently recombine radiatively with minority holes in the TMDC. Since the conduction band at the K-point is 0.5 eV higher than at the Σ-point, a lower Schottky barrier exists for the Σ-point band, making electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wave functions in the metal. This enhancement in the indirect emission only occurs for thick flakes of MoS2 and WSe2 (≥100 nm) and is completely absent in monolayer and few-layer (∼10 nm) flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures, which is consistent with the hot electron injection model.