1
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Lee YR, Kim DY, Kim JY, Lee DH, Bae GT, Jang H, Park JY, Jung S, Jung EY, Park CS, Lee HK, Tae HS. Effects of Dielectric Barrier on Water Activation and Phosphorus Compound Digestion in Gas-Liquid Discharges. Nanomaterials (Basel) 2023; 14:40. [PMID: 38202495 PMCID: PMC10780582 DOI: 10.3390/nano14010040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 12/14/2023] [Accepted: 12/20/2023] [Indexed: 01/12/2024]
Abstract
To generate a stable and effective air-liquid discharge in an open atmosphere, we investigated the effect of the dielectric barrier on the discharge between the pin electrode and liquid surface in an atmospheric-pressure plasma reactor. The atmospheric-pressure plasma reactor used in this study was based on a pin-plate discharge structure, and a metal wire was used as a pin-type power electrode. A plate-type ground electrode was placed above and below the vessel to compare the pin-liquid discharge and pin-liquid barrier discharge (PLBD). The results indicated that the PLBD configuration utilizing the bottom of the vessel as a dielectric barrier outperformed the pin-liquid setup in terms of the discharge stability and that the concentration of reactive species was different in the two plasma modes. PLBD can be used as a digestion technique for determining the phosphorus concentration in natural water sources. The method for decomposing phosphorus compounds by employing PLBD exhibited excellent decomposition performance, similar to the performance of thermochemical digestion-an established conventional method for phosphorus detection in water. The PLBD structure can replace the conventional chemical-agent-based digestion method for determining the total dissolved phosphorus concentration using the ascorbic acid reduction method.
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Affiliation(s)
- Ye Rin Lee
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
| | - Do Yeob Kim
- Superintelligence Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea;
| | - Jae Young Kim
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
| | - Da Hye Lee
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
| | - Gyu Tae Bae
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
| | - Hyojun Jang
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
| | - Joo Young Park
- Department of Nano-Bio Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea; (J.Y.P.); (S.J.)
| | - Sunghoon Jung
- Department of Nano-Bio Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea; (J.Y.P.); (S.J.)
| | - Eun Young Jung
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
- The Institute of Electronic Technology, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Choon-Sang Park
- Department of Electrical Engineering, Milligan University, Johnson City, TN 37682, USA;
| | - Hyung-Kun Lee
- Superintelligence Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea;
| | - Heung-Sik Tae
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (Y.R.L.); (J.Y.K.); (D.H.L.); (G.T.B.); (H.J.); (E.Y.J.)
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2
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Choi M, Lee Y, You Y, Cho C, Jeong W, Seong I, Choi B, Kim S, Seol Y, You S, Yeom GY. Characterization of SiO 2 Plasma Etching with Perfluorocarbon (C 4F 8 and C 6F 6) and Hydrofluorocarbon (CHF 3 and C 4H 2F 6) Precursors for the Greenhouse Gas Emissions Reduction. Materials (Basel) 2023; 16:5624. [PMID: 37629915 PMCID: PMC10456486 DOI: 10.3390/ma16165624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 08/09/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
This paper proposes the use of environmentally friendly alternatives, C6F6 and C4H2F6, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO2 plasma etching, instead of conventional precursors C4F8 and CHF3. The study employs scanning electron microscopy for etch profile analysis and quadrupole mass spectrometry for plasma diagnosis. Ion bombardment energy at the etching conditions is determined through self-bias voltage measurements, while densities of radical species are obtained using quadrupole mass spectroscopy. The obtained results compare the etch performance, including etch rate and selectivity, between C4F8 and C6F6, as well as between CHF3 and C4H2F6. Furthermore, greenhouse gas (GHG) emissions are evaluated using a million metric ton of carbon dioxide equivalent, indicating significantly lower emissions when replacing conventional precursors with the proposed alternatives. The results suggest that a significant GHG emissions reduction can be achieved from the investigated alternatives without a deterioration in SiO2 etching characteristics. This research contributes to the development of alternative precursors for reducing global warming impacts.
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Affiliation(s)
- Minsu Choi
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
| | - Youngseok Lee
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea; (S.K.); (Y.S.)
| | - Yebin You
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
| | - Chulhee Cho
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
| | - Wonnyoung Jeong
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
| | - Inho Seong
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
| | - Byeongyeop Choi
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
| | - Sijun Kim
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea; (S.K.); (Y.S.)
| | - Youbin Seol
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea; (S.K.); (Y.S.)
| | - Shinjae You
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea; (M.C.); (Y.Y.); (C.C.); (W.J.); (I.S.); (B.C.); (S.Y.)
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea; (S.K.); (Y.S.)
| | - Geun Young Yeom
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea;
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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3
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Jeong W, Kim S, Lee Y, Cho C, Seong I, You Y, Choi M, Lee J, Seol Y, You S. Contribution of Ion Energy and Flux on High-Aspect Ratio SiO 2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C 4F 8 Plasma: Individual Ion Energy and Flux Controlled. Materials (Basel) 2023; 16:ma16103820. [PMID: 37241447 DOI: 10.3390/ma16103820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 05/13/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspect ratio SiO2 etching characteristics for various trench widths in a dual-frequency capacitively coupled plasma system with Ar/C4F8 gases. We established an individual control window of ion flux and energy by adjusting dual-frequency power sources and measuring the electron density and self-bias voltage. We separately varied the ion flux and energy with the same ratio from the reference condition and found that the increase in ion energy shows higher etching rate enhancement than that in the ion flux with the same increase ratio in a 200 nm pattern width. Based on a volume-averaged plasma model analysis, the weak contribution of the ion flux results from the increase in heavy radicals, which is inevitably accompanied with the increase in the ion flux and forms a fluorocarbon film, preventing etching. At the 60 nm pattern width, the etching stops at the reference condition and it remains despite increasing ion energy, which implies the surface charging-induced etching stops. The etching, however, slightly increased with the increasing ion flux from the reference condition, revealing the surface charge removal accompanied with conducting fluorocarbon film formation by heavy radicals. In addition, the entrance width of an amorphous carbon layer (ACL) mask enlarges with increasing ion energy, whereas it relatively remains constant with that of ion energy. These findings can be utilized to optimize the SiO2 etching process in high-aspect ratio etching applications.
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Affiliation(s)
- Wonnyoung Jeong
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Sijun Kim
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea
| | - Youngseok Lee
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea
| | - Chulhee Cho
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Inho Seong
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Yebin You
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Minsu Choi
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Jangjae Lee
- Samsung Electronics, Hwaseong-si 18448, Republic of Korea
| | - Youbin Seol
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea
| | - Shinjae You
- Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea
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4
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Kwon H, Barad HN, Silva Olaya AR, Alarcón-Correa M, Hahn K, Richter G, Wittstock G, Fischer P. Dry Synthesis of Pure and Ultrathin Nanoporous Metallic Films. ACS Appl Mater Interfaces 2023; 15:5620-5627. [PMID: 36690332 PMCID: PMC9906609 DOI: 10.1021/acsami.2c19584] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 12/27/2022] [Indexed: 05/27/2023]
Abstract
Nanoporous metals possess unique properties attributed to their high surface area and interconnected nanoscale ligaments. They are mostly fabricated by wet synthetic methods that are not universal to various metals and not free from impurities due to solution-based etching processes. Here, we demonstrate that the plasma treatment of metal nanoparticles formed by physical vapor deposition is a general route to form such films with many metals including the non-noble ones. The resultant nanoporous metallic films are free of impurities and possess highly curved ligaments and nanopores. The metal films are ultrathin, yet remarkably robust and very well connected, and thus are highly promising for various applications such as transparent conducting electrodes.
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Affiliation(s)
- Hyunah Kwon
- Institute
for Molecular Systems Engineering and Advanced Materials, Heidelberg University, INF 225, 69120 Heidelberg, Germany
- Max
Planck Institute for Medical Research, Jahnstrasse 29, 69120 Heidelberg, Germany
| | - Hannah-Noa Barad
- Department
of Chemistry, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002 Israel
| | - Alex Ricardo Silva Olaya
- School
of Mathematics and Science, Department of Chemistry, Carl von Ossietzky University of Oldenburg, 26111 Oldenburg, Germany
| | - Mariana Alarcón-Correa
- Institute
for Molecular Systems Engineering and Advanced Materials, Heidelberg University, INF 225, 69120 Heidelberg, Germany
- Max
Planck Institute for Medical Research, Jahnstrasse 29, 69120 Heidelberg, Germany
| | - Kersten Hahn
- Max
Planck
Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
| | - Gunther Richter
- Max
Planck Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Gunther Wittstock
- School
of Mathematics and Science, Department of Chemistry, Carl von Ossietzky University of Oldenburg, 26111 Oldenburg, Germany
| | - Peer Fischer
- Institute
for Molecular Systems Engineering and Advanced Materials, Heidelberg University, INF 225, 69120 Heidelberg, Germany
- Max
Planck Institute for Medical Research, Jahnstrasse 29, 69120 Heidelberg, Germany
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5
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Gerritsen SH, Chittock NJ, Vandalon V, Verheijen MA, Knoops HCM, Kessels WMM, Mackus AJM. Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices. ACS Appl Nano Mater 2022; 5:18116-18126. [PMID: 36583128 PMCID: PMC9791650 DOI: 10.1021/acsanm.2c04025] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/12/2022] [Accepted: 11/07/2022] [Indexed: 06/17/2023]
Abstract
In many nano(opto)electronic devices, the roughness at surfaces and interfaces is of increasing importance, with roughness often contributing toward losses and defects, which can lead to device failure. Consequently, approaches that either limit roughness or smoothen surfaces are required to minimize surface roughness during fabrication. The atomic-scale processing techniques atomic layer deposition (ALD) and atomic layer etching (ALE) have experimentally been shown to smoothen surfaces, with the added benefit of offering uniform and conformal processing and precise thickness control. However, the mechanisms which drive smoothing during ALD and ALE have not been investigated in detail. In this work, smoothing of surfaces by ALD and ALE is studied using finite difference simulations that describe deposition/etching as a front propagating uniformly and perpendicular to the surface at every point. This uniform front propagation model was validated by performing ALD of amorphous Al2O3 using the TMA/O2 plasma. ALE from the TMA/SF6 plasma was also studied and resulted in faster smoothing than predicted by purely considering uniform front propagation. Correspondingly, it was found that for such an ALE process, a second mechanism contributes to the smoothing, hypothesized to be related to curvature-dependent surface fluorination. Individually, the atomic-scale processing techniques enable smoothing; however, ALD and ALE will need to be combined to achieve thin and smooth films, as is demonstrated and discussed in this work for multiple applications.
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Affiliation(s)
- Sven H. Gerritsen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
| | - Nicholas J. Chittock
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
| | - Vincent Vandalon
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
- Eurofins
Materials Science, High
Tech Campus 11, 5656AEEindhoven, The Netherlands
| | - Harm C. M. Knoops
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
- Oxford
Instruments Plasma Technology, North End, BristolBS49 4AP, U.K.
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
| | - Adriaan J. M. Mackus
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600MBEindhoven, The Netherlands
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6
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Bae GT, Jang HJ, Jung EY, Lee YR, Park CS, Kim JY, Tae HS. Development of an Atmospheric Pressure Plasma Jet Device Using Four-Bore Tubing and Its Applications of In-Liquid Material Decomposition and Solution Plasma Polymerization. Polymers (Basel) 2022; 14:polym14224917. [PMID: 36433044 PMCID: PMC9696552 DOI: 10.3390/polym14224917] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 11/09/2022] [Indexed: 11/16/2022] Open
Abstract
In this study, we describe an atmospheric pressure plasma jet (APPJ) device made of four-bore tubing operable in inhospitable humid environments and introduce two potential applications of liquid material processing: decomposition of aqueous phosphorus compounds and solution-plasma polymerization. A four-bore tube was used as the plasma transfer conduit and two diagonal bores contained metal wires. In the proposed APPJ device, the metal wires serving as electrodes are completely enclosed inside the holes of the multi-bore glass tube. This feature allows the APPJ device to operate both safely and reliably in humid environments or even underwater. Thus, we demonstrate that the proposed electrode-embedded APPJ device can effectively decompose aqueous phosphorus compounds into their phosphate form by directly processing the solution sample. As another application of the proposed APPJ device, we also present the successful synthesis of polypyrrole nanoparticles by solution plasma polymerization in liquid pyrrole.
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Affiliation(s)
- Gyu Tae Bae
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Hyo Jun Jang
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Eun Young Jung
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
- The Institute of Electronic Technology, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Ye Rin Lee
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Choon-Sang Park
- Department of Electrical Engineering, Milligan University, Johnson City, TN 37682, USA
| | - Jae Young Kim
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
- Correspondence: (J.Y.K.); (H.-S.T.); Tel.: +82-53-950-6563 (H.-S.T.)
| | - Heung-Sik Tae
- School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
- School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
- Correspondence: (J.Y.K.); (H.-S.T.); Tel.: +82-53-950-6563 (H.-S.T.)
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7
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Yu N, Jourdain R, Gourma M, Xu F, Bennett A, Fang F. Power Dissipation of an Inductively Coupled Plasma Torch under E Mode Dominated Regime. Micromachines (Basel) 2021; 12:834. [PMID: 34357244 DOI: 10.3390/mi12070834] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/15/2021] [Revised: 07/07/2021] [Accepted: 07/14/2021] [Indexed: 12/04/2022]
Abstract
This paper focuses on the power dissipation of a plasma torch used for an optical surface fabrication process. The process utilizes an inductively coupled plasma (ICP) torch that is equipped with a De-Laval nozzle for the delivery of a highly collimated plasma jet. The plasma torch makes use of a self-igniting coil and an intermediate co-axial tube made of alumina. The torch has a distinctive thermal and electrical response compared to regular ICP torches. In this study, the results of the power dissipation investigation reveal the true efficiency of the torch and discern its electrical response. By systematically measuring the coolant parameters (temperature change and flow rate), the power dissipation is extrapolated. The radio frequency power supply is set to 800 W, E mode, throughout the research presented in this study. The analytical results of power dissipation, derived from the experiments, show that 15.4% and 33.3% are dissipated by the nozzle and coil coolant channels, respectively. The experiments also enable the determination of the thermal time constant of the plasma torch for the entire range of RF power.
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8
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Ma C, Nikiforov A, De Geyter N, Dai X, Morent R, Ostrikov KK. Future antiviral polymers by plasma processing. Prog Polym Sci 2021; 118:101410. [PMID: 33967350 PMCID: PMC8085113 DOI: 10.1016/j.progpolymsci.2021.101410] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Revised: 01/11/2021] [Accepted: 04/22/2021] [Indexed: 12/31/2022]
Abstract
Coronavirus disease 2019 (COVID-19) is largely threatening global public health, social stability, and economy. Efforts of the scientific community are turning to this global crisis and should present future preventative measures. With recent trends in polymer science that use plasma to activate and enhance the functionalities of polymer surfaces by surface etching, surface grafting, coating and activation combined with recent advances in understanding polymer-virus interactions at the nanoscale, it is promising to employ advanced plasma processing for smart antiviral applications. This trend article highlights the innovative and emerging directions and approaches in plasma-based surface engineering to create antiviral polymers. After introducing the unique features of plasma processing of polymers, novel plasma strategies that can be applied to engineer polymers with antiviral properties are presented and critically evaluated. The challenges and future perspectives of exploiting the unique plasma-specific effects to engineer smart polymers with virus-capture, virus-detection, virus-repelling, and/or virus-inactivation functionalities for biomedical applications are analysed and discussed.
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Key Words
- ACE2, angiotensin-converting enzyme 2
- Antiviral polymers
- BSA, bovine serum albumin
- CF4, tetrafluoromethane
- COVID-19, coronavirus disease 2019
- DC, direct current
- H2, hydrogen
- HBV, hepatitis B virus
- HMDSO, hexamethyldisiloxane
- IPNpp, plasma polymerized isopentyl nitrite
- MERS-CoV, middle east respiratory syndrome
- MW, microwave
- NO, nitric oxide
- PC, polycarbonate
- PDMS, polydimethylsiloxane
- PECVD, plasma-enhanced chemical vapour deposition
- PEG, polyethene glycol
- PET, polyethene terephthalate
- PFM, pentafluorophenyl methacrylate
- PP, polypropylene
- PPE, personal protective equipment
- PS, polystyrene
- PTFE, polytetrafluoroethylene
- PVC, polyvinyl chloride
- REF, reference
- RF, radio frequency
- RONS, reactive oxygen and nitrogen species
- RSV, respiratory syncytial virus
- RT-PCR, reverse transcription-polymerase chain reaction
- RV, rhinovirus
- SARS-CoV-2, severe acute respiratory syndrome coronavirus 2
- SEM, scanning electron microscopy
- TEOS-O2, tetraethyl orthosilicate and oxygen
- UV, ultraviolet
- WCA, water contact angle
- plasma processing
- surface modification
- ΔD, the variation of the dissipation
- Δf, the frequency shift
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Affiliation(s)
- Chuanlong Ma
- Research Unit Plasma Technology (RUPT), Department of Applied Physics, Ghent University, Sint-Pietersnieuwstraat 41, B4, 9000 Ghent, Belgium
| | - Anton Nikiforov
- Research Unit Plasma Technology (RUPT), Department of Applied Physics, Ghent University, Sint-Pietersnieuwstraat 41, B4, 9000 Ghent, Belgium
| | - Nathalie De Geyter
- Research Unit Plasma Technology (RUPT), Department of Applied Physics, Ghent University, Sint-Pietersnieuwstraat 41, B4, 9000 Ghent, Belgium
| | - Xiaofeng Dai
- Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710061, China
- Wuxi School of Medicine, Jiangnan University, Wuxi, 214122, China
| | - Rino Morent
- Research Unit Plasma Technology (RUPT), Department of Applied Physics, Ghent University, Sint-Pietersnieuwstraat 41, B4, 9000 Ghent, Belgium
| | - Kostya Ken Ostrikov
- School of Chemistry and Physics and QUT Centre for Materials Science, Queensland University of Technology (QUT), 4000 Brisbane, Australia
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Mateljak Lukačević S, Kurtović T, Lang Balija M, Brgles M, Steinberger S, Marchetti-Deschmann M, Halassy B. Quality-Related Properties of Equine Immunoglobulins Purified by Different Approaches. Toxins (Basel) 2020; 12:E798. [PMID: 33327454 DOI: 10.3390/toxins12120798] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Revised: 12/10/2020] [Accepted: 12/11/2020] [Indexed: 11/17/2022] Open
Abstract
Whole IgG antivenoms are prepared from hyperimmune animal plasma by various refinement strategies. The ones most commonly used at industrial scale are precipitation by sodium or ammonium sulphate (ASP), and caprylic acid precipitation (CAP) of non-immunoglobulin proteins. The additional procedures, which have so far been used for experimental purposes only, are anion-exchange (AEX) and cation-exchange chromatography (CEX), as well as affinity chromatography (AC) using IgG’s Fc-binding ligands. These protocols extract the whole IgG fraction from plasma, which contains both venom-specific and therapeutically irrelevant antibodies. Such preparations represent a complex mixture of various IgG subclasses whose functional and/or structural properties, as well as relative distribution, might be affected differently, depending on employed purification procedure. The aim of this work was to compare the influence of aforementioned refinement strategies on the IgG subclass distribution, venom-specific protective efficacy, thermal stability, aggregate formation and retained impurity profile of the final products. A unique sample of Vipera ammodytes ammodytes specific hyperimmune horse plasma was used as a starting material, enabling direct comparison of five purification approaches. The highest purity was achieved by CAP and AC (above 90% in a single step), while the lowest aggregate content was present in samples from AEX processing. Albumin was the main contaminant in IgG preparations obtained by ASP and CEX, while transferrin dominantly contaminated IgG sample from AEX processing. Alpha-1B-glycoprotein was present in CAP IgG fraction, as well as in those from ASP- and AEX-based procedures. AC approach induced the highest loss of IgG(T) subclass. CEX and AEX showed the same tendency, while CAP and ASP had almost no impact on subclass distribution. The shift in IgG subclass composition influenced the specific protective efficacy of the respective final preparation as measured in vivo. AC and CEX remarkably affected drug’s venom-neutralization activity, in contrary to the CAP procedure, that preserved protective efficacy of the IgG fraction. Presented data might improve the process of designing and establishing novel downstream processing strategies and give guidance for optimization of the current ones by providing information on potency-protecting and purity-increasing properties of each purification principle.
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10
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Li G, Wu X, Guo H, Guo Y, Chen H, Wu Y, Zheng J, Li X. Plasma Transforming Ni(OH) 2 Nanosheets into Porous Nickel Nitride Sheets for Alkaline Hydrogen Evolution. ACS Appl Mater Interfaces 2020; 12:5951-5957. [PMID: 31940170 DOI: 10.1021/acsami.9b20887] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Nickel nitride (Ni3N) is a superior hydrogen evolution reaction (HER) catalyst where the nitrogen source is usually ammonia and the reaction temperature is high during the synthesis process. Herein, we employed an innovative method to obtain three-dimensional porous nickel nitride nanosheets on Ni foam (Ni3N/NF) by transforming Ni(OH)2 nanosheets in N2-H2 glow discharge plasma. The obtained Ni3N/NF displays a high HER activity with a small overpotential of 44 mV and a low Tafel slope of 46 mV dec-1, which is competitive to a Pt/C catalyst. Both the test data and simulation results prove that active ions and radicals in plasma play essential roles in achieving the facile nitridation, as well as building a nanostructured morphology over the Ni3N/NF surface. The unique synthesis method opens new avenues for metal nitrides of HER catalysts and beyond.
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Affiliation(s)
- Guoling Li
- College of Materials Science and Engineering , Qingdao University , Qingdao 266071 , China
| | - Xiuqi Wu
- Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Heng Guo
- Department of Engineering Physics , Tsinghua University , Beijing 100084 , PR China
| | - Yanru Guo
- Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Hui Chen
- College of Materials Science and Engineering , Qingdao University , Qingdao 266071 , China
| | - Yong Wu
- Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Jie Zheng
- Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Xingguo Li
- Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
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11
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Tselev A, Fagan J, Kolmakov A. In-situ Near-Field Probe Microscopy of Plasma Processing. Appl Phys Lett 2018; 113:10.1063/1.5049592. [PMID: 35023877 PMCID: PMC8752043 DOI: 10.1063/1.5049592] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2018] [Accepted: 12/03/2018] [Indexed: 06/01/2023]
Abstract
There exists a great necessity for in situ nanoscale characterization of surfaces and thin films during plasma treatments. To address this need, the current approaches rely on either 'post mortem' sample microscopy, or in situ optical methods. The latter, however, lack the required nanoscale spatial resolution. In this paper, we propose scanning near-field microwave microscopy to monitor plasma-assisted processes with a submicron spatial resolution. In our approach, a plasma environment with an object of interest is separated from the near-field probe and the rest of the microscope by a SiN membrane of a few-10s nm thickness, and the imaging is performed through this membrane. As a proof of concept, we were able to monitor gradual transformations of carbon nanotube films upon plasma-induced oxidation by a low-pressure air plasma. In the implemented approach with the near-field probe in contact with the membrane, the plasma processing should be interrupted during imaging to preserve the membrane integrity. Possible solutions to achieve in situ real-time imaging during plasma conditions are discussed.
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Affiliation(s)
- Alexander Tselev
- CICECO and Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal
| | - Jeffrey Fagan
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Andrei Kolmakov
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
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12
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Gasvoda RJ, van de Steeg AW, Bhowmick R, Hudson EA, Agarwal S. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO 2. ACS Appl Mater Interfaces 2017; 9:31067-31075. [PMID: 28796486 DOI: 10.1021/acsami.7b08234] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CFx) film deposition and Ar plasma activation of the CFx film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CFx deposition half-cycle from a C4F8/Ar plasma show that an atomically thin mixing layer is formed between the deposited CFx layer and the underlying SiO2 film. Etching during the Ar plasma cycle is activated by Ar+ bombardment of the CFx layer, which results in the simultaneous removal of surface CFx and the underlying SiO2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CFx deposition, which combined with an ultrathin CFx layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CFx film, ∼3-4 Å of SiO2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CFx layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CFx on reactor walls leads to a gradual increase in the etch per cycle.
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Affiliation(s)
- Ryan J Gasvoda
- Department of Chemical and Biological Engineering, Colorado School of Mines , 1613 Illinois Street, Golden, Colorado 80401, United States
| | - Alex W van de Steeg
- Applied Physics Department, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Ranadeep Bhowmick
- Lam Research Corporation , 4650 Cushing Parkway, Fremont, California 94538, United States
| | - Eric A Hudson
- Lam Research Corporation , 4650 Cushing Parkway, Fremont, California 94538, United States
| | - Sumit Agarwal
- Department of Chemical and Biological Engineering, Colorado School of Mines , 1613 Illinois Street, Golden, Colorado 80401, United States
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13
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Satulu V, Ionita MD, Vizireanu S, Mitu B, Dinescu G. Plasma Processing with Fluorine Chemistry for Modification of Surfaces Wettability. Molecules 2016; 21:E1711. [PMID: 27983598 DOI: 10.3390/molecules21121711] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2016] [Revised: 11/29/2016] [Accepted: 12/05/2016] [Indexed: 11/17/2022] Open
Abstract
Using plasma in conjunction with fluorinated compounds is widely encountered in material processing. We discuss several plasma techniques for surface fluorination: deposition of fluorocarbon thin films either by magnetron sputtering of polytetrafluoroethylene targets, or by plasma-assisted chemical vapor deposition using tetrafluoroethane as a precursor, and modification of carbon nanowalls by plasma treatment in a sulphur hexafluoride environment. We showed that conformal fluorinated thin films can be obtained and, according to the initial surface properties, superhydrophobic surfaces can be achieved.
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14
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Sardella E, Palumbo F, Camporeale G, Favia P. Non-Equilibrium Plasma Processing for the Preparation of Antibacterial Surfaces. Materials (Basel) 2016; 9:E515. [PMID: 28773637 PMCID: PMC5456949 DOI: 10.3390/ma9070515] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2016] [Revised: 06/12/2016] [Accepted: 06/20/2016] [Indexed: 12/19/2022]
Abstract
Non-equilibrium plasmas offer several strategies for developing antibacterial surfaces that are able to repel and/or to kill bacteria. Due to the variety of devices, implants, and materials in general, as well as of bacteria and applications, plasma assisted antibacterial strategies need to be tailored to each specific surface. Nano-composite coatings containing inorganic (metals and metal oxides) or organic (drugs and biomolecules) compounds can be deposited in one step, and used as drug delivery systems. On the other hand, functional coatings can be plasma-deposited and used to bind antibacterial molecules, for synthesizing surfaces with long lasting antibacterial activity. In addition, non-fouling coatings can be produced to inhibit the adhesion of bacteria and reduce the formation of biofilm. This paper reviews plasma-based strategies aimed to reduce bacterial attachment and proliferation on biomedical materials and devices, but also onto materials used in other fields. Most of the activities described have been developed in the lab of the authors.
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Affiliation(s)
- Eloisa Sardella
- Istituto di Nanotecnologia, Consiglio Nazionale delle Ricerche, Via Orabona 4, 70126 Bari, Italy.
| | - Fabio Palumbo
- Istituto di Nanotecnologia, Consiglio Nazionale delle Ricerche, Via Orabona 4, 70126 Bari, Italy.
| | - Giuseppe Camporeale
- Dipartimento di Chimica Università degli Studi di Bari "Aldo Moro", Via Orabona 4, 70126 Bari, Italy.
| | - Pietro Favia
- Istituto di Nanotecnologia, Consiglio Nazionale delle Ricerche, Via Orabona 4, 70126 Bari, Italy.
- Dipartimento di Chimica Università degli Studi di Bari "Aldo Moro", Via Orabona 4, 70126 Bari, Italy.
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15
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Narayanan R, Yamada H, Karakaya M, Podila R, Rao AM, Bandaru PR. Modulation of the Electrostatic and Quantum Capacitances of Few Layered Graphenes through Plasma Processing. Nano Lett 2015; 15:3067-3072. [PMID: 25826121 DOI: 10.1021/acs.nanolett.5b00055] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
It is shown that charged defect generation, through argon ion-based plasma processing, in few layer graphene, could substantially enhance the electrical capacitance for electrochemical energy storage. Detailed consideration of the constituent space charge and quantum capacitances were used to delineate a new length scale, correlated to electrically active defects contributing to the capacitance, and was found to be smaller than a structural correlation length determined through Raman spectroscopy. The study offers insights into an industrially viable method (i.e., plasma processing) for modifying and enhancing the energy density of graphene-based electrochemical capacitors.
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Affiliation(s)
| | | | - M Karakaya
- §Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - R Podila
- §Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
- ∥Clemson Nanomaterials Center, Clemson University, Anderson, South Carolina 29625, United States
| | - A M Rao
- §Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
- ∥Clemson Nanomaterials Center, Clemson University, Anderson, South Carolina 29625, United States
| | - P R Bandaru
- ⊥Program in Materials Science, Department of Mechanical Engineering, University of California, San Diego, La Jolla, California 92093, United States
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16
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Fernandes CSM, Gonçalves B, Sousa M, Martins DL, Barroso T, Pina AS, Peixoto C, Aguiar-Ricardo A, Roque ACA. Biobased monoliths for adenovirus purification. ACS Appl Mater Interfaces 2015; 7:6605-6612. [PMID: 25756920 DOI: 10.1021/am508907b] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Adenoviruses are important platforms for vaccine development and vectors for gene therapy, increasing the demand for high titers of purified viral preparations. Monoliths are macroporous supports regarded as ideal for the purification of macromolecular complexes, including viral particles. Although common monoliths are based on synthetic polymers as methacrylates, we explored the potential of biopolymers processed by clean technologies to produce monoliths for adenovirus purification. Such an approach enables the development of disposable and biodegradable matrices for bioprocessing. A total of 20 monoliths were produced from different biopolymers (chitosan, agarose, and dextran), employing two distinct temperatures during the freezing process (-20 °C and -80 °C). The morphological and physical properties of the structures were thoroughly characterized. The monoliths presenting higher robustness and permeability rates were further analyzed for the nonspecific binding of Adenovirus serotype 5 (Ad5) preparations. The matrices presenting lower nonspecific Ad5 binding were further functionalized with quaternary amine anion-exchange ligand glycidyltrimethylammonium chloride hydrochloride by two distinct methods, and their performance toward Ad5 purification was assessed. The monolith composed of chitosan and poly(vinyl) alcohol (50:50) prepared at -80 °C allowed 100% recovery of Ad5 particles bound to the support. This is the first report of the successful purification of adenovirus using monoliths obtained from biopolymers processed by clean technologies.
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Affiliation(s)
- Cláudia S M Fernandes
- †UCIBIO, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
| | - Bianca Gonçalves
- †UCIBIO, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
| | - Margarida Sousa
- †UCIBIO, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
- §LAQV, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
| | - Duarte L Martins
- ‡Instituto de Biologia Experimental Tecnológica, Avenida da República, Quinta do Marquês, Edificio IBET/ITQB, Estação Agronómica Nacional, 2780-157 Oeiras, Portugal
| | - Telma Barroso
- †UCIBIO, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
- §LAQV, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
| | - Ana Sofia Pina
- †UCIBIO, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
| | - Cristina Peixoto
- ‡Instituto de Biologia Experimental Tecnológica, Avenida da República, Quinta do Marquês, Edificio IBET/ITQB, Estação Agronómica Nacional, 2780-157 Oeiras, Portugal
| | - Ana Aguiar-Ricardo
- §LAQV, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
| | - A Cecília A Roque
- †UCIBIO, REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
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17
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Lymberopoulos DP, Economou DJ. Two-Dimensional Self-Consistent Radio Frequency Plasma Simulations Relevant to the Gaseous Electronics Conference RF Reference Cell. J Res Natl Inst Stand Technol 1995; 100:473-494. [PMID: 29151756 PMCID: PMC4887236 DOI: 10.6028/jres.100.036] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Accepted: 03/27/1995] [Indexed: 05/22/2023]
Abstract
Over the past few years multidimensional self-consistent plasma simulations including complex chemistry have been developed which are promising tools for furthering our understanding of reactive gas plasmas and for reactor design and optimization. These simulations must be benchmarked against experimental data obtained in well-characterized systems such as the Gaseous Electronics Conference (GEC) reference cell. Two-dimensional simulations relevant to the GEC Cell are reviewed in this paper with emphasis on fluid simulations. Important features observed experimentally, such as off-axis maxima in the charge density and hot spots of metastable species density near the electrode edges in capacitively-coupled GEC cells, have been captured by these simulations.
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Affiliation(s)
- Dimitris P Lymberopoulos
- Plasma Processing Laboratory, Department of Chemical Engineering, University of Houston, Houston, TX 77204-4792
| | - Demetre J Economou
- Plasma Processing Laboratory, Department of Chemical Engineering, University of Houston, Houston, TX 77204-4792
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18
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Anderson HM, Radovanov SB. Dusty Plasma Studies in the Gaseous Electronics Conference Reference Cell. J Res Natl Inst Stand Technol 1995; 100:449-462. [PMID: 29151754 PMCID: PMC4887230 DOI: 10.6028/jres.100.034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Accepted: 03/27/1995] [Indexed: 05/22/2023]
Abstract
Particle "dust" in processing plasmas is of critical concern to the semiconductor industry because of the threat particles pose to device yield. A number of important investigations into the formation, growth, charging, transport and consequences of particulate dust in plasmas have been made using the Gaseous Electronics Conference Reference Cell as the reactor test-bed. The greatest amount of work to date has been directed toward a better understanding of the role that electrostatic, ion drag, neutral fluid drag and gravitational forces play in governing the dynamic behavior of particle cloud motion. This has been accomplished by using laser light scattering (LLS) techniques to track the motion of suspended particle clouds in rf discharges. Also, statistical correlation's in the fluctuation of scattered laser light intensity [dynamic laser light scattering (DLLS)] can be used to determine information about particle size, motion, and growth dynamics. These results are reviewed, along with recent work demonstrating that charged dust particles in a plasma can form a strongly coupled Coulomb liquid or solid. New results from DLSS experiments performed in the Reference Cell are presented that show process-induced dust particles confined in an electrostatic trap exhibit low-frequency oscillatory motion consistent with charge density wave (CDW) motion predicted for strongly coupled Coulomb liquids.
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Affiliation(s)
- H M Anderson
- Department of Chemical and Nuclear Engineering, The University of New Mexico, Albuquerque, NM 87131
| | - S B Radovanov
- Department of Chemical and Nuclear Engineering, The University of New Mexico, Albuquerque, NM 87131
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19
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Govindan TR, Meyyappan M. One-Dimensional Modeling Studies of the Gaseous Electronics Conference RF Reference Cell. J Res Natl Inst Stand Technol 1995; 100:463-472. [PMID: 29151755 PMCID: PMC4887233 DOI: 10.6028/jres.100.035] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Accepted: 03/27/1995] [Indexed: 05/22/2023]
Abstract
A review of the one-dimensional modeling studies in the literature of the Gaseous Electronics Conference (GEC) reference plasma reactor is presented. Most of the studies are based on the fluid model description of the discharge and some utilize hybrid fluid-kinetic schemes. Both models are discussed here briefly. The models provide a basic understanding of the discharge mechanisms and reproduce several critical discharge features observed experimentally.
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Affiliation(s)
- T R Govindan
- Scientific Research Associates, Inc., P.O. Box 1058, Glastonbury, CT 06033-6058
| | - M Meyyappan
- Scientific Research Associates, Inc., P.O. Box 1058, Glastonbury, CT 06033-6058
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20
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Hebner GA, Greenberg KE. Optical Diagnostics in the Gaseous Electronics Conference Reference Cell. J Res Natl Inst Stand Technol 1995; 100:373-382. [PMID: 29151748 PMCID: PMC4887234 DOI: 10.6028/jres.100.028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Accepted: 03/27/1995] [Indexed: 06/07/2023]
Abstract
A number of laser-induced fluorescence and absorption spectroscopy studies have been conducted using Gaseous Electronics Conference Reference Cells. Laser-induced fluorescence has been used to measure hydrogen atom densities, to measure argon metastable spatial profiles, to determine the sheath electric field, and to infer the electron density and temperature. Absorption spectroscopy, using lamp sources and diode lasers, has been used to measure metastable atom densities in helium and argon discharges and fluorocarbon densities in silicon etching discharges. The experimental techniques and sample results of these investigations are reviewed.
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Affiliation(s)
- G A Hebner
- Sandia National Laboratories, Dept. 1128, MS 1423, Albuquerque, NM 87185
| | - K E Greenberg
- University of New Mexico, Department of Chemical and Nuclear Engineering, Albuquerque, NM 87131
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