Inkjet printing of heavy-metal-free quantum dots-based devices: a review

Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.

Thermally Evaporated Metal Halide Perovskites and Their Analogues: Film Fabrication, Applications and Beyond

Metal halide perovskites emerge as promising semiconductors for optoelectronic devices due to ease of fabrication, attractive photophysical properties, their low cost, highly tunable material properties, and high performance. High-quality thin films of metal halide perovskites are the basis of most of these applications including solar cells, light-emitting diodes, photodetectors, and electronic memristors. A typical fabrication method for perovskite thin films is the solution method, which has several limitations in device reproducibility, adverse environmental impact, and utilization of raw materials. Thermal evaporation holds great promise in addressing these bottlenecks in fabricating high-quality halide perovskite thin films. It also has high compatibility with mass-production platforms that are well-established in industries. This review first introduces the basics of the thermal evaporation method with a particular focus on the critical parameters influencing the thin film deposition. The research progress of the fabrication of metal halide perovskite thin films is further summarized by different thermal evaporation approaches and their applications in solar cells and other optoelectronic devices. Finally, research challenges and future opportunities for both fundamental research and commercialization are discussed.

One-Step Preparation of High-Stability CsPbX3/CsPb2X5 Composite Microplates with Tunable Emission

The core-shell structure is an effective means to improve the stability and optoelectronic properties of cesium lead halide (CsPbX3 (X = Cl, Br, I)) perovskite quantum dots (QDs). However, confined by the ionic radius differences, developing a core-shell packaging strategy suitable for the entire CsPbX3 system remains a challenge. In this study, we introduce an optimized hot-injection method for the epitaxial growth of the CsPb2X5 substrate on CsPbX3 surfaces, achieved by precisely controlling the reaction time and the ratio of lead halide precursors. The synthesized CsPbX3/CsPb2X5 composite microplates exhibit an emission light spectrum that covers the entire visible range. Crystallographic analyses and density functional theory (DFT) calculations reveal a minimal lattice mismatch between the (002) plane of CsPb2X5 and the (11 ¯ 0) plane of CsPbX3, facilitating the formation of high-quality type-I heterojunctions. Furthermore, introducing Cl- and I- significantly alters the surface energy of CsPb2X5's (110) plane, leading to an evolutionary morphological shift of grains from circular to square microplates. Benefiting from the passivation of CsPb2X5, the composites exhibit enhanced optical properties and stability. Subsequently, the white light-emitting diode prepared using the CsPbX3/CsPb2X5 composite microplates has a high luminescence efficiency of 136.76 lm/W and the PL intensity decays by only 3.6% after 24 h of continuous operation.

Recent advance of high-quality perovskite nanostructure and its application in flexible photodetectors

Flexible photodetectors (PDs) have garnered increasing attention for their potential applications in diverse fields, including weather monitoring, smart robotics, smart textiles, electronic eyes, wearable biomedical monitoring devices, and so on. Notably, perovskite nanostructures have emerged as a promising material for flexible PDs due to their distinctive features, such as a large optical absorption coefficient, tunable band gap, extended photoluminescence decay time, high carrier mobility, low defect density, long exciton diffusion lengths, strong self-trapped effect, good mechanical flexibility, and facile synthesis methods. In this review, we first introduce various synthesis methods for perovskite nanostructures and elucidate their corresponding optical and electrical properties, encompassing quantum dots, nanocrystals, nanowires, nanobelts, nanosheets, single-crystal thin films, polycrystalline thin films, and nanostructured arrays. Furthermore, the working mechanism and key performance parameters of optoelectronic devices are summarized. The review also systematically compiles recent advancements in flexible PDs based on various nanostructured perovskites. Finally, we present the current challenges and prospects for the development of perovskite nanostructures-based flexible PDs.

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Porous silicon (PSi) has promising applications in optoelectronic devices due to its efficient photoluminescence (PL). This study systematically investigates the effects of various organic solvents and their concentrations during electrochemical etching on the resulting PL and surface morphology of PSi. Ethanol, n-butanol, ethylene glycol (EG) and N,N-dimethylformamide (DMF) were employed as solvents in hydrofluoric acid (HF)-based silicon etching. The PL peak position exhibited progressive blue-shifting with increasing ethanol and EG concentrations, accompanied by reductions in the secondary peak intensity and emission linewidth. Comparatively, changes in n-butanol concentration only slightly impacted the main PL peak position. Additionally, distinct morphological transitions were observed for different solvents, with ethanol and n-butanol facilitating uniform single-layer porous structures at higher concentrations in contrast to the excessive etching caused by EG and DMF resulting in PL quenching. These results highlight the complex interdependencies between solvent parameters such as polarity, volatility and viscosity in modulating PSi properties through their influence on surface wetting, diffusion and etching kinetics. The findings provide meaningful guidelines for selecting suitable solvent conditions to tune PSi characteristics for optimized device performance.

Coplanar Conformational Structure of π-Conjugated Polymers for Optoelectronic Applications

Hierarchical structure of conjugated polymers is critical to dominating their optoelectronic properties and applications. Compared to nonplanar conformational segments, coplanar conformational segments of conjugated polymers (CPs) demonstrate favorable properties for applications as a semiconductor. Herein, recent developments in the coplanar conformational structure of CPs for optoelectronic devices are summarized. First, this review comprehensively summarizes the unique properties of planar conformational structures. Second, the characteristics of the coplanar conformation in terms of optoelectrical properties and other polymer physics characteristics are emphasized. Five primary characterization methods for investigating the complanate backbone structures are illustrated, providing a systematical toolbox for studying this specific conformation. Third, internal and external conditions for inducing the coplanar conformational structure are presented, offering guidelines for designing this conformation. Fourth, the optoelectronic applications of this segment, such as light-emitting diodes, solar cells, and field-effect transistors, are briefly summarized. Finally, a conclusion and outlook for the coplanar conformational segment regarding molecular design and applications are provided.

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

Preparation of Novel Organic Polymer Semiconductor and Its Properties in Transistors through Collaborative Theoretical and Experimental Approaches

Conjugated polymer semiconductors based on donor-acceptor structures are commonly employed as core materials for optoelectronic devices in the field of organic electronics. In this study, we designed and synthesized a novel acceptor unit thiophene-vinyl-diketopyrrolopyrrole, named TVDPP, based on a four-step organic synthesis procedure. Stille coupling reactions were applied with high yields of polymerization of TVDPP with fluorinated thiophene (FT) monomer. The molecular weight and thermal stability of the polymers were tested and showed high molecular weight and good thermal stability. Theoretical simulation calculations and 2D grazing-incidence wide-angle X-ray scattering (GIWAXS) tests verified the planarity of the material and excellent stacking properties, which are favorable for achieving high carrier mobility. Measurements based on the polymer as an organic thin film transistor (OTFT) device were carried out, and the mobility and on/off current ratio reached 0.383 cm2 V-1 s-1 and 104, respectively, showing its great potential in organic optoelectronics.

Artificial Optoelectronic Synapse Based on Violet Phosphorus Microfiber Arrays

Memristor-based artificial synapses are regarded as the most promising candidate to develop brain-like neuromorphic network computers and overcome the bottleneck of Von-Neumann architecture. Violet phosphorus (VP) as a new allotrope of available phosphorus with outstanding electro-optical properties and stability has attracted more and more attention in the past several years. In this study, large-scale, high-yield VP microfiber vertical arrays have been successfully developed on a Sn-coated graphite paper and are used as the memristor functional layers to build reliable, low-power artificial synaptic devices. The VP devices can well mimic the major synaptic functions such as short-term memory (STM), long-term memory (LTM), paired-pulse facilitation (PPF), spike timing-dependent plasticity (STDP), and spike rate-dependent plasticity (SRDP) under both electrical and light stimulation conditions, even the dendritic synapse functions and simple logical operations. By virtue of the excellent performance, the VP artificial synapse devices can be conductive to building high-performance optic-neural synaptic devices simulating the human-like optic nerve system. On this basis, Pavlov's associative memory can be successfully implemented optically. This study provides a promising approach for the design and manufacture of VP-based artificial synaptic devices and outlines a direction with multifunctional neural devices.

Sequential In-Situ Growth of Layered Conjugated Polymers for Optoelectronics Under Electrochemical Control

Layered optoelectronic devices are manufactured using multistep procedures that require high precision in the spatial positioning of individual materials. Current technology uses costly and tedious procedures and instrumentation. In this work instead, we propose an approach which exploits the fundamental properties of the substrate to direct the growth of the next layer, here controlled by an electrochemical potential. We have electrochemically synthesized and characterized a series of polymeric materials that are most commonly used in the field. The films produced show gradient monomer ratios embedded in the polymeric film as a function of the distance from the working electrode. Under the optimized conditions, reproducible construction of simple electronic elements, e. g., rectifying diodes, is achieved. We argue that the sequential in situ method leads to gradient composition of polymer chains and the film resulting in the rectification of electric current. We discuss how this system can open new avenues in advanced optoelectronic applications, such as organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs).

In-Sensor Computing: Materials, Devices, and Integration Technologies

The number of sensor nodes in the Internet of Things is growing rapidly, leading to a large volume of data generated at sensory terminals. Frequent data transfer between the sensors and computing units causes severe limitations on the system performance in terms of energy efficiency, speed, and security. To efficiently process a substantial amount of sensory data, a novel computation paradigm that can integrate computing functions into sensor networks should be developed. The in-sensor computing paradigm reduces data transfer and also decreases the high computing complexity by processing data locally. Here, the hardware implementation of the in-sensor computing paradigm at the device and array levels is discussed. The physical mechanisms that lead to unique sensory response characteristics and their corresponding computing functions are illustrated. In particular, bioinspired device characteristics enable the implementation of the functionalities of neuromorphic computation. The integration technology is also discussed and the perspective on the future development of in-sensor computing is provided.

Optoelectronic Metasurface for Free-Space Optical-Microwave Interactions

Photon-electron interactions are essential for many areas such as energy conversion, signal processing, and emerging quantum science. However, the current demonstrations are typically targeted to fiber and on-chip applications and lack of study in wave space. Here, we introduce a concept of optoelectronic metasurface that is capable of realizing direct and efficient optical-microwave interactions in free space. The optoelectronic metasurface is realized via a hybrid integration of microwave resonant meta-structures with a photoresponsive material. As a proof of concept, we construct an ultrathin optoelectronic metasurface using photodiodes that is bias free, which is modeled and analyzed theoretically by using the light-driven electronic excitation principle and microwave network theory. The incident laser and microwave from the free space will interact with the photodiode-based metasurface simultaneously and generate strong laser-microwave coupling, where the phase of output microwave depends on the input laser intensity. We experimentally verify that the reflected microwave phase of the optoelectronic metasurface decreases as the incident laser power becomes large, providing a distinct strategy to control the vector fields by the power intensity. Our results offer fundamentally new understanding of the metasurface capabilities and the wave-matter interactions in hybrid materials.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

Titanium dioxide (TiO₂) is a kind of wide-bandgap semiconductor. Nano-TiO₂ devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO₂-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO₂-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.

Enhanced luminescence sensing performance and increased intrachain order in blended films of P3HT and cellulose nanocrystals

Blended films comprising poly(butyl acrylate) (PBA)-grafted cellulose nanocrystals (CNCs) and poly(3-hexylthiophene) (P3HT), exhibited more intense photoluminescence (PL) and longer PL emission lifetimes compared to pristine P3HT films. Optical absorption and photoluminescence spectra indicated reduced torsional disorder i.e. enhanced backbone planarity in the P3HT@CNC blended composites compared to the bare P3HT. Such molecule-level geometrical modification resulted in both smaller interchain and higher intrachain exciton bandwidth in the blended composites compared to the bare P3HT, because of reduced interchain interactions and enhanced intrachain order. These results indicate a potential switch of the aggregation behavior from dominant H-aggregates to J-aggregates, supported by Raman spectroscopy. The reorganization of micromolecular structure and concomitant macroscopic aggregation of the conjugated polymer chains resulted in a longer conjugation length for the P3HT@CNC blended composites compared to the bare P3HT. Additionally, this nanoscale morphological change produced a reduction in the highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) energy gap of the blends, evidenced from optical absorption spectra. Classical molecular dynamics simulation studies predicted the probability of enhanced planarity in the polymer backbone following interactions with CNC surfaces. Theoretical results from density functional theory calculations corroborate the experimentally observed reduction of optical bandgap in the blends compared to bare P3HT. The blended composite outperformed the bare P3HT in nitro-group PL sensing tests with a pronounced difference in the reaction kinetics. While the PL quenching dynamics for bare P3HT followed Stern-Volmer kinetics, the P3HT@CNC blended composite exhibited a drastic deviation from the same. This work shows the potential of a functionalized rod-like biopolymer in tuning the optoelectronic properties of a technologically important polymeric organic semiconductor through control of the nanoscale morphology.

Photonic Crystal-Integrated Optoelectronic Devices with Naked-Eye Visualization and Digital Readout for High-Resolution Detection of Ultratrace Analytes

The detection of ultratrace analytes is highly desirable for the non-invasive monitoring of human diseases. However, a major challenge is fast, naked-eye, high-resolution ultratrace detection. Herein, a rectangular 3D composite photonic crystal (PC)-based optoelectronic device is first designed that combines the sensitivity-enhancing effects of PCs and optoelectronic devices with fast and real-time digital monitoring. A crack-free, centimeter-scale, mechanically robust ellipsoidal composite PCs with sufficient hardness and modulus, even exceeding most plastics and aluminum alloys, are developed. The high mechanical strength of ellipsoidal composite PCs allows them to be hand-machined into rectangular geometries that can be conformally covered with the centimeter-scale flat light-detection area without interference from ambient light, easily integrating 3D composite PC-based optoelectronic devices. The PC-based device's signal-to-noise ratio increases dramatically from original 30-40 to ≈60-70 dB. Droplets of ultratrace analytes on the device are identified by fast digital readout within seconds, with detection limits down to 5 µL, enabling rapid identification of ultratrace glucose in artificial sweat and diabetes risk. The developed 3D PC-based sensor offers the advantages of small size, low cost, and high reliability, paving the way for wider implementation in other portable optoelectronic devices.

Nanostructures for Solar Energy Harvesting

Renewable energy sources are becoming more and more essential to energy production as societies evolve toward a fossil-fuel-free world. Solar energy is one of the most abundant sources of green energy. Nanoantennas can be used to improve and enhance the absorption of light into a photovoltaic cell in order to generate more current. In this study, different nanoantenna structures are analysed in tandem with a silicon solar cell in an effort to improve its output. The nanoantennas studied are metallic aperture nanoantennas made up of either silver, aluminium, gold or copper. The three geometries compared are rectangular, circular and triangular. The maximum field enhancement obtained is for an aluminium rectangular nanoantenna of 50 nm thickness. Despite this, the geometry with more improvements compared with a basic silicon cell was the circle geometry with a 100 nm radius.

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Acid-Base Reaction-Assisted Quantum Dot Patterning via Ligand Engineering and Photolithography

The integration of quantum dots (QDs) into device arrays for high-resolution display and imaging sensor systems remains a significant challenge in research and industry because of issues associated with the QD patterning process. It is difficult for conventional patterning processes such as stamping, inkjet printing, and photolithography to employ QDs and fabricate high-resolution patterns without degrading the properties of QDs. Here, we introduce a novel strategy for the QD patterning process by treating QDs with a bifunctional ligand for acid-base reaction-assisted photolithography. Bifunctional ligands, such as MPA (mercaptopropionic acid) or TGA (thioglycolic acid), have a carboxyl group on one side that allows the QDs to be etched along with the photoresist (PR) by the base developer, while on the opposite side the ligands have a thiol group that passivates the QD surface. Passivating MPA ligands on QDs facilitates patterning of QD films and makes them compatible with harsh photolithography processes. We successfully achieved the patterning of QDs down to 5 μm. We also fabricated high-resolution patterned QD light-emitting diodes (LEDs) and QD photodetector arrays. Our patterning process provides precise control for the fabrication of highly integrated QD-based optoelectronic devices.

Solution Processed Photodetectors with PVK-WS2 Nanotube/Nanofullerene Organic-Inorganic Hybrid Films

Organic-inorganic hybrid photodetectors have attracted increased interest due to their exceptional properties, such as flexibility, transparency, and low cost for many promising applications. Low-dimensional tungsten disulfide (WS₂) nanostructures have outstanding electrical and optical properties, making them ideal candidates for ultrasensitive photodetector devices. In this paper, photodetectors were fabricated with hybrid thin films containing two different WS₂ nanomaterials, one-dimensional (1D) WS₂ nanotubes (WS₂-NTs) and a zero-dimensional (0D) WS₂ nanofullerene (WS₂-FLs) hybrid with poly(N-vinyl carbazole) (PVK). The electrical responses of the devices under visible-light illuminations were studied. The photodetector devices with 0D WS₂-FLs/PVK hybrid thin films have relatively higher sensitivity and stable voltage responses to visible light. Besides, the hybrid film shows a strong surface-enhanced Raman effect (SERS). These materials and new strategies enable the creation of a new class of processed photodetectors for practical applications.

Multi-Junction Solar Cells and Nanoantennas

Photovoltaic technology is currently at the heart of the energy transition in our pursuit to lean off fossil-fuel-based energy sources. Understanding the workings and trends of the technology is crucial, given the reality. With most conventional PV cells constrained by the Shockley-Queisser limit, new alternatives have been developed to surpass it. One of such variations are heterojunction cells, which, by combining different semiconductor materials, break free from the previous constraint, leveraging the advantages of both compounds. A subset of these cells are multi-junction cells, in their various configurations. These build upon the heterojunction concept, combining several junctions in a cell-a strategy that has placed them as the champions in terms of conversion efficiency. With the aim of modelling a multi-junction cell, several optic and optoelectronic models were developed using a Finite Element Tool. Following this, a study was conducted on the exciting and promising technology that are nanoantenna arrays, with the final goal of integrating both technologies. This research work aims to study the impact of the nanoantennas' inclusion in an absorbing layer. It is concluded that, using nanoantennas, it is possible to concentrate electromagnetic radiation near their interfaces. The field's profiles might be tuned using the nanoantennas' geometrical parameters, which may lead to an increase in the obtained current.

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

In this paper, we report the synthesis of high-quality Ta₂Ni₃Se₈crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 × 10⁷Jones) and comparably short response time (τ_rise= 433 ms,τ_decay= 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta₂Ni₃Se₈makes it even more important in future electronic and optoelectronic applications.

Diamond Structures for Tuning of the Finesse Coefficient of Photonic Devices

Finesse coefficient is one of the most important parameters describing the properties of a resonant cavity. In this research, a mathematical investigation of the application of diamond structures in a fiber-optic Fabry–Perot measurement head to assess their impact on the finesse coefficient is proposed. We present modeled transmission functions of cavities utilizing a nitrogen-doped diamond, a boron-doped diamond, nanocrystalline diamond sheet and a silver mirror. The diamond structures were deposited using a microwave plasma-assisted chemical vapor deposition system. A SEM investigation of surface morphology was conducted. The modeling took into consideration the fiber-optic Fabry–Perot setup working in a reflective mode, with an external cavity and a light source of 1550 nm. A comparison of the mathematical investigation and experimental results is presented.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices

High-quality transparent conductive materials are beneficial to improve the charge transfer and light transmittance and reduce the interface defects as well as the production cost of optoelectronic devices. A high threshold thickness of metal layer in oxide/metal/oxide (OMO) compound thin films leads to strong reflectance, especially in the near-infrared region, limiting the broad-spectrum device applications. Here, we propose a novel Zn doping strategy using the low-cost single-target sputtering technology to achieve the growth of Ag-Zn thin films (i.e., Zn-doped Ag) and introduce a trace amount of O₂ to further obtain ultrathin Ag-Zn(O) films (thin-film thickness d ≤ 5 nm), which greatly improves the broad-spectrum characteristics of OMO films. Heterogeneous metal and gas doping technology effectively promotes the formation of two-dimensional continuous film growth. By combining the ultrathin Ag-Zn(O) layer with the MGZO (i.e., Mg- and Ga co-doped ZnO) oxide film grown by reactive plasma deposition, a typical broad-spectrum MGZO/Ag-Zn(O)/MGZO (50/5/50 nm)-OMO compound thin film exhibits an average transmittance of 91.6% in the wavelength range of 400-1200 nm and low sheet resistance. The broad-spectrum organic solar cells based on MGZO/Ag-Zn(O)/MGZO electrodes present a high power conversion efficiency of 15.35%, superior to those devices based on single-layer oxide electrodes. The distinguished performances are attributed to the ultrathin Ag-Zn(O) films in OMO, paving the way for applications in broad-spectrum optoelectronic and flexible electronic devices.

Enhanced Infrared Photodiodes Based on PbS/PbClx Core/Shell Nanocrystals

Improved passivation strategies to address the more complex surface structure of large-diameter nanocrystals are critical to the advancement of infrared photodetectors based on colloidal PbS. In this contribution, the performance of short-wave infrared (SWIR) photodiodes fabricated with PbS/PbCl_x (core/shell) nanocrystals vs their PbS-only (core) counterparts are directly compared. Devices using PbS cores suffer from shunting and inefficient charge extraction, while core/shell-based devices exhibit greater external quantum efficiencies and lower dark current densities. To elucidate the implications of the shell chemistry on device performance, thickness-dependent energy level offsets and interfacial chemistry of nanocrystal films with the zinc oxide electron-transport layer are evaluated. The disparate device performance between the two synthetic methods is attributed to unfavorable interface dipole formation and surface defect states, associated with inadequate removal of native organic ligands in core-only films. The core/shell system offers a promising route to manage the additional nonpolar (100) surface facets of larger nanocrystals that conventional halide ligand treatments fail to sufficiently passivate.

Numerical Study on Broadband Antireflection of Moth-Eye Nanostructured Polymer Film with Flexible Polyethylene Terephthalate Substrate

The application of moth-eye nanostructured polymer film on the flexible polyethylene terephthalate (PET) substrate is an effective way to improve its antireflection (AR) performance. However, many factors affect the AR properties of the moth-eye structure in the actual manufacturing process. Moreover, the antireflection research based on PET substrate has been relatively lacking compared with the silicon substrate. In this paper, we simulate and analyze the AR performance of the moth-eye nanostructured polymer film on PET substrate by using the finite-difference time-domain method within the wavelength range of 400–1100 nm. Simulation results show that the parabola-shaped moth-eye structure (PSMS) can suppress the Fresnel reflection significantly. Moreover, the height and filling ratios are the dominant factors that affect the AR performance of PSMS. Additionally, the base diameter, residual layer thickness, and the refractive index of PSMS polymer film also affect the reflectivity of PET slightly. As a result, an optimal PSMS with base diameter of 400 nm, height of 300 nm, and the hexagonal close-packed arrangement is appropriate, and the solar-weighted reflectivity of PET can be suppressed to 0.21%, which shows a prominent advantage over the bare PET (≈6%). Therefore, this research has promising potential for improving the optical performance of optoelectronic devices by using nanostructured polymer materials.

Controllable Synthesis and Performance Modulation of 2D Covalent-Organic Frameworks

Covalent-organic frameworks (COFs) are especially interesting and unique as their highly ordered topological structures entirely built from plentiful π-conjugated units through covalent bonds. Arranging tailorable organic building blocks into periodically reticular skeleton bestows predictable lattices and various properties upon COFs in respect of topology diagrams, pore size, properties of channel wall interfaces, etc. Indeed, these peculiar features in terms of crystallinity, conjugation degree, and topology diagrams fundamentally decide the applications of COFs including heterogeneous catalysis, energy conversion, proton conduction, light emission, and optoelectronic devices. Additionally, this research field has attracted widespread attention and is of importance with a major breakthrough in recent year. However, this research field is running with the lack of summaries about tailorable construction of 2D COFs for targeted functionalities. This review first covers some crucial polymeric strategies of preparing COFs, containing boron ester condensation, amine-aldehyde condensation, Knoevenagel condensation, trimerization reaction, Suzuki CC coupling reaction, and hybrid polycondensation. Subsequently, a summary is made of some representative building blocks, and then underlines how the electronic and molecular structures of building blocks can strongly influence the functional performance of COFs. Finally, conclusion and perspectives on 2D COFs for further study are proposed.

Simulation of Solar Cells with Integration of Optical Nanoantennas

The evolution of nanotechnology has provided a better understanding of light-matter interaction at a subwavelength scale and has led to the development of new devices that can possibly play an important role in future applications. Nanoantennas are an example of such devices, having gained interest in recent years for their application in the field of photovoltaic technology at visible and infrared wavelengths, due to their ability to capture and confine energy of free-propagating waves. This property results from a unique phenomenon called extraordinary optical transmission (EOT) where, due to resonant behavior, light passing through subwavelength apertures in a metal film can be transmitted in greater orders of magnitude than that predicted by classical theories. During this study, 2D and 3D models featuring a metallic nanoantenna array with subwavelength holes coupled to a photovoltaic cell are simulated using a Finite Element Tool. These models present with slight variations between them, such as the position of the nanoantenna within the structure, the holes’ geometry and the type of cell, in order to verify how its optical response is affected. The results demonstrate that the coupling of nanoantennas to solar cells can be advantageous and improve the capture and absorption of radiation. It is concluded that aperture nanoantennas may concentrate radiation, meaning that is possible to tune the electric field peak and adjust absorption on the main layers. This may be important because it might be possible to adjust solar cell performance to the global regions’ solar spectrum by only adjusting the nanoantenna parameters.

Photon Recycling in Semiconductor Thin Films and Devices

Photon recycling (PR) plays an important role in the study of semiconductor materials and impacts the properties of their optoelectronic applications. However, PR has not been investigated comprehensively and it has not been demonstrated experimentally in many different kinds of semiconductor materials and devices. In this review paper, first, the authors introduce the background of PR and describe how this phenomenon was originally identified in semiconductors. Then, the theory and modelling of PR is reviewed and some of the important parameters that are used to quantify PR are highlighted. Next, a variety of the methods used to achieve and characterize PR in materials and devices are discussed. Examples of how the performance parameters of different types of optoelectronic devices are affected by PR are described. Finally, a summary of the roles of PR in semiconductor materials and devices and an outlook on how PR can be used to solve existing problems and challenges in the field of optoelectronics are provided. From this review, it is apparent that PR can have a positive impact on optoelectronic device performance, and that further in-depth theoretical and experimental studies are needed to rigorously demonstrate the advantages and importance of PR.

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Colloidal quantum dot (QD), a solution-processable nanoscale optoelectronic building block with well-controlled light absorption and emission properties, has emerged as a promising material system capable of interacting with various photonic structures. Integrated QD/photonic structures have been successfully realized in many optical and optoelectronic devices, enabling enhanced performance and/or new functionalities. In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD-based devices is discussed. A brief overview of QD-based passive devices for on-chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure-integrated optoelectronic systems.

Light Management With Grating Structures in Optoelectronic Devices

Ordered and patterned micro/nanostructure arrays have emerged as powerful platforms for optoelectronic devices due to their unique ordered-dependent optical properties. Among various structures, grating structure is widely applied because of its simple fabrication process, easy adjusting of size and morph, and efficient light trapping. Herein, we summarized recent developments of light management with grating structures in optoelectronic devices. Typical mechanisms about the grating structures in optoelectronic devices have been reviewed. Moreover, the applications of grating structures in various optoelectronic devices have been presented. Meanwhile, the remaining bottlenecks and perspectives for future development have been discussed.

Fighting Health Hazards in Lead Halide Perovskite Optoelectronic Devices with Transparent Phosphate Salts

Organic-inorganic lead halide perovskite (CH₃NH₃PbI₃) solar cells have surpassed 25% power conversion efficiency, being ready for industrial-scale production of cheap photovoltaic (PV) panels. In this action, the major hurdle is its lead content, which in case of device failure, could be washed into the soil, entering the food chain. Since there is a zero tolerance on lead in the human organism, this health hazard is a critical obstacle for commercialization. Here, we propose a solution to this problem by incorporating phosphate salts (e.g., (NH₄)₂HPO₄) in PV and other perovskite-based optoelectronic devices in various architectures. Phosphate salts do not react with CH₃NH₃PbI₃ and do not alter its advantageous optoelectronic properties, but in a wet environment, they react immediately with lead, forming a highly insoluble compound, precluding this way the spread of lead into the environment. It is expected that this study will stimulate research, enabling lead halide perovskite solar cells to reach a similar environmental risk category as the commercially available, nonwater-soluble heavy metal-containing CdTe and gallium diselenide technologies.

Polarons and Charge Localization in Metal-Halide Semiconductors for Photovoltaic and Light-Emitting Devices

Metal-halide semiconductors have shown excellent performance in optoelectronic applications such as solar cells, light-emitting diodes, and detectors. In this review the role of charge-lattice interactions and polaron formation in a wide range of these promising materials, including perovskites, double perovskites, Ruddlesden-Popper layered perovskites, nanocrystals, vacancy-ordered, and other novel structures, is summarized. The formation of Fröhlich-type "large" polarons in archetypal bulk metal-halide ABX₃ perovskites and its dependence on A-cation, B-metal, and X-halide composition, which is now relatively well understood, are discussed. It is found that, for nanostructured and novel metal-halide materials, a larger variation in the strengths of polaronic effects is reported across the literature, potentially deriving from variations in potential barriers and the presence of interfaces at which lattice relaxation may be enhanced. Such findings are further discussed in the context of different experimental approaches used to explore polaronic effects, cautioning that firm conclusions are often hampered by the presence of alternate processes and interactions giving rise to similar experimental signatures. Overall, a complete understanding of polaronic effects will prove essential given their direct influence on optoelectronic properties such as charge-carrier mobilities and emission spectra, which are critical to the performance of energy and optoelectronic applications.

Liquid-Exfoliated 2D Materials for Optoelectronic Applications

Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.

Bridging the"Last Millimeter" Gap of Brain-Machine Interfaces via Near-Infrared Wireless Power Transfer and Data Communications

Arrays of floating neural sensors with high channel count that cover an area of square centimeters and larger would be transformative for neural engineering and brain-machine interfaces. Meeting the power and wireless data communications requirements within the size constraints for each neural sensor has been elusive due to the need to incorporate sensing, computing, communications, and power functionality in a package of approximately 100 micrometers on a side. In this work, we demonstrate a near infrared optical power and data communication link for a neural recording system that satisfies size requirements to achieve dense arrays and power requirements to prevent tissue heating. The optical link is demonstrated using an integrated optoelectronic device consisting of a tandem photovoltaic cell and microscale light emitting diode. End-to-end functionality of a wireless neural link within system constraints is demonstrated using a pre-recorded neural signal between a self-powered CMOS integrated circuit and single photon avalanche photodiode.

Commercial photodiodes and phototransistors as dosimeters of photon beams for radiotherapy

PURPOSE

The response to radiation typically used in radiotherapy treatments has been experimentally evaluated for three samples of two phototransistors (BPW85B and OP505A) and two PIN photodiodes types (VTB8440BH and BPW34S).

METHODS

To that end, a staggered irradiation cycle has been applied which included dose rate values from 0.81 to 4.87 cGy/s, achieving a total absorbed dose of 21.4 Gy. The samples have been irradiated with a linear accelerator and the relations between the induced photocurrent and the average and instantaneous dose rates, and between the accumulated charge and the absorbed dose, have been determined. The radiation-induced output currents were measured by means of an external interface of the devices to a previously designed readout unit.

RESULTS

Experimental results of Si PIN photodiode BPW34S have shown a sensitivity of (13.9 ± 0.5) nC/cGy, slight sensitivity dependence on dose rate, and a high linearity of the current with the average and instantaneous dose rate, requiring only 10 V of reverse bias voltage. This device thermal drift has characterized and modeled for temperature effect compensation.

CONCLUSIONS

Silicon PIN photodiode BPW34S, previously tested for X-rays and Co-60 gamma ray source, can also be a reliable candidate for dose rate and absorbed skin dose determination in typical radiotherapy treatments irradiations. A low sensitivity loss below 2% up to 21.4 Gy has been measured, allowing its use as an affordable reusable skin dosimeter. Moreover, no significant difference has been observed between its response to dose-per-pulse and changing pulse repetition frequency in terms of sensitivity and dependence with dose-rate value.

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Very recently, two new two-dimensional (2D) layered semi-conducting materials MoSi2N4 and WSi2N4 were successfully synthesized in experiments, and a large family of these two 2D materials, namely MA2Z4, was also predicted theoretically (Science, 369, 670 (2020)). Motivated by this exciting family, in this work, we systematically investigate the mechanical, electronic and optical properties of monolayer and bilayer MoSi2P4 and MoSi2As4 by using the first-principles calculation method. Numerical results indicate that both monolayer and bilayer MoSi2Z4 (Z = P, As) present good structural stability, isotropic mechanical parameters, moderate bandgap, favorable carrier mobilities, remarkable optical absorption, superior photon responsivity and external quantum efficiency. Especially, due to the wave-functions of band edges dominated by d orbital of the middle-layer Mo atoms are screened effectively, the bandgap and optical absorption hardly depend on the number of layers, providing an added convenience in the experimental fabrication of few-layer MoSi2Z4-based electronic and optoelectronic devices. We also build a monolayer MoSi2Z4-based 2D optoelectronic device, and quantitatively evaluate the photocurrent as a function of energy and polarization angle of the incident light. Our investigation verifies the excellent performance of a few-layer MoSi2Z4 and expands their potential application in nanoscale electronic and optoelectronic devices.

Optical Nanoantennas for Photovoltaic Applications

In the last decade, the development and progress of nanotechnology has enabled a better understanding of the light-matter interaction at the nanoscale. Its unique capability to fabricate new structures at atomic scale has already produced novel materials and devices with great potential applications in a wide range of fields. In this context, nanotechnology allows the development of models, such as nanometric optical antennas, with dimensions smaller than the wavelength of the incident electromagnetic wave. In this article, the behavior of optical aperture nanoantennas, a metal sheet with apertures of dimensions smaller than the wavelength, combined with photovoltaic solar panels is studied. This technique emerged as a potential renewable energy solution, by increasing the efficiency of solar cells, while reducing their manufacturing and electricity production costs. The objective of this article is to perform a performance analysis, using COMSOL Multiphysics software, with different materials and designs of nanoantennas and choosing the most suitable one for use on a solar photovoltaic panel.

Ambipolar 2D Semiconductors and Emerging Device Applications

With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.

Graphene-Based Contacts for Optoelectronic Devices

Hybrid transparent contacts based on combinations of a transparent conductive oxide and a few graphene monolayers were developed in order to evaluate their optical and electrical performance with the main aim to use them as front contacts in optoelectronic devices. The assessment of the most suitable strategies for their fabrication was performed by testing different protocols addressing such issues as the protection of the device structure underneath, the limitation of sample temperature during the graphene-monolayer transfer process and the determination of the most suitable stacking structure. Suitable metal ohmic electrodes were also evaluated. Among a number of options tested, the metal contact based on Ti + Ag showed the highest reproducibility and the lowest contact resistivity. Finally, with the objective of extracting the current generated from optoelectronic devices to the output pins of an external package, focusing on a near future commercial application, the electrical properties of the connections made with an ultrasonic bonding machine (sonic welding) between the optimized Ti + Ag metal contacts and Al or Au micro-wires were also evaluated. All these results have an enormous potential as hybrid electrodes based on graphene to be used in novel designs of a future generation of optoelectronic devices, such as solar cells.

Broad-Band Photodetectors Based on Copper Indium Diselenide Quantum Dots in a Methylammonium Lead Iodide Perovskite Matrix

Low-temperature solution-processed methylammonium lead iodide (MAPbI₃) crystalline films have shown outstanding performance in optoelectronic devices. However, their high dark current and high noise equivalent power prevent their application in broad-band photodetectors. Here, we applied a facile solution-based antisolvent strategy to fabricate a hybrid structure of CuInSe₂ quantum dots (CISe QDs) embedded into a MAPbI₃ matrix, which not only enhances the photodetector responsivity, showing a large on/off ratio of 10⁴ at 2 V bias compared with the bare perovskite films, but also significantly (for over 7 days) improves the device stability, with hydrophobic ligands on the CuInSe₂ QDs acting as a barrier against the uptake of environmental moisture. MAPbI₃/CISe QD-based lateral photodetectors exhibit high responsivities of >0.5 A/W and 10.4 mA/W in the visible and near-infrared regions, respectively, partly because of the formation of a type II interface between the respective semiconductors but most significantly because of the efficient trap-state passivation of the perovskite grain surfaces, and the reduction in the twinning-induced trap density, which stems from both CISe QDs and their organic ligands. A large specific detectivity of 2.2 × 10¹² Jones at 525 nm illumination (1 μW/cm²), a fast fall time of 236 μs, and an extremely low noise equivalent power of 45 fW/Hz^1/2 have been achieved.

Recent Advances in Energy Conversion Applications of Carbon Dots: From Optoelectronic Devices to Electrocatalysis

Exploitation and utilization of sustainable energy sources has increasingly become the common theme of global social development, which has promoted tremendous development of energy conversion devices/technologies. Owing to excellent and unique optical/electrical properties, carbon dots (CDs) have attracted extensive research interest for numerous energy conversion applications. Strong absorption, downconversion photoluminescence, electron acceptor/donor characteristics, and excellent electron conductivity endow CDs with enormous potential for applications in optoelectronic devices. Furthermore, excellent electron transfers/transport capacities and easily manipulable structural defects of CDs offer distinct advantages for electrocatalytic applications. Recent advances in CD-based energy conversion applications, including optoelectronic devices such as light-emitting diodes and solar cells, and electrocatalytic reactions including the hydrogen evolution reaction, oxygen evolution reaction, oxygen reduction reaction, and carbon dioxide reduction reaction, are summarized. Finally, current challenges and future prospects for CD-based energy conversion applications are proposed, highlighting the importance of controllable structural design and modifications.

In Situ Growth of All-Inorganic Perovskite Single Crystal Arrays on Electron Transport Layer

Directly growing perovskite single crystals on charge carrier transport layers will unravel a promising route for the development of emerging optoelectronic devices. Herein, in situ growth of high-quality all-inorganic perovskite (CsPbBr3) single crystal arrays (PeSCAs) on cubic zinc oxide (c-ZnO) is reported, which is used as an inorganic electron transport layer in optoelectronic devices, via a facile spin-coating method. The PeSCAs consist of rectangular thin microplatelets of 6-10 µm in length and 2-3 µm in width. The deposited c-ZnO enables the formation of phase-pure and highly crystallized cubic perovskites via an epitaxial lattice coherence of (100)CsPbBr3∥(100)c-ZnO, which is further confirmed by grazing incidence wide-angle X-ray scattering. The PeSCAs demonstrate a significant structural stability of 26 days with a 9 days excellent photoluminescence stability in ambient environment, which is much superior to the perovskite nanocrystals (PeNCs). The high crystallinity of the PeSCAs allows for a lower density of trap states, longer carrier lifetimes, and narrower energetic disorder for excitons, which leads to a faster diffusion rate than PeNCs. These results unravel the possibility of creating the interface toward c-ZnO heterogeneous layer, which is a major step for the realization of a better integration of perovskites and charge carrier transport layers.

Transferable High-Quality Inorganic Perovskites for Optoelectronic Devices by Weak Interaction Heteroepitaxy

Transferable semiconductors with superior light-emitting properties are important for developing flexible and integrated optoelectronics. However, finding such a qualified candidate remains challenging. Here, we report the fabrication of transferable high-quality CsPbBr₃ single crystals on a highly oriented pyrolytic graphite (HOPG) substrate via weak interaction heteroepitaxy for the first time. Semi-quantitative kinetic analysis based on the classical nucleation theory well accounts for the van der Waals (vdW) epitaxial growth process of perovskite on the HOPG substrate. The density functional theory calculations illustrate the bonding nature of the interface and predict the Volmer-Weber growth mode in vdW epitaxy, which is consistent with our experimental observations. Importantly, the extremely weak vdW interaction between the perovskite and HOPG not only enables the high quality of the crystals but also endows them with the facile transferability to any foreign substrate by the mechanical exfoliation technique. Leveraging on the transferred CsPbBr₃ single crystals, the low-threshold microlasers and monolithic perovskite light-emitting diode devices are demonstrated. Our results represent a significant step toward advanced optoelectronic devices relying on the emerging perovskite semiconductors.

Band-Edge Luminescence from Oxide and Halide Perovskite Semiconductors

Because perovskite crystals exhibit unique magnetic, conductive, and optical properties, they have been the subject of many fundamental investigations in various research fields. However, investigations related to their use as optoelectronic device materials are still in their early days. Regarding oxide perovskites, which have been investigated for a long time, the efficiency of photoluminescence (PL) induced by band-to-band transitions is extremely low because of the localized nature of the carriers in these materials. On the other hand, halide perovskites exhibit a highly efficient band-edge PL attributable to the recombination of delocalized photocarriers. Therefore, it is expected that this class of high-quality materials will be advantageous for optoelectronic devices such as solar cells and light-emitting diodes. In this Minireview, we discuss various aspects of the PL properties and carrier dynamics of SrTiO₃ and CH₃ NH₃ PbX₃ (X=I, Br), which are representative oxide and halide perovskites.

Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.

Bridging the van der Waals Interface for Advanced Optoelectronic Devices

Van der Waals (vdW) heterostructures exhibit excellent optoelectronic properties and novel functionalities. However, their applicability is impeded due to the common issue of the tunneling barrier, which arises from the vdW gap; this significantly increases the injection resistance of the photoexcited carriers. Herein, a generic strategy is demonstrated to eliminate the vdW gap in a broad class of heterostructures. It is observed that the vdW gap in the interface is bridged via strong orbital hybridization between the interface dangling bonds of nonlayered chalcogenide semiconductors and the artificially induced vacancies of transition metal chalcogenides (TMDCs). The photoresponse times of bridged PbS/ReS₂ , PbS/MoSe₂ , and PbS/MoS₂ are ≈30, 51, and 43 µs, respectively. The photon-triggered on/off ratio of the bridged PbS/MoS₂ , ZnSe/MoS₂ , and ZnTe/MoS₂ heterostructures exceed 10⁶ , 10⁵ , and 10⁵ , respectively. These are several orders of magnitude higher than common vdW heterostructures. The findings obtained in this study present a versatile strategy for overcoming the performance limitations of vdW heterostructures.

Light Confinement Effect Induced Highly Sensitive, Self-Driven Near-Infrared Photodetector and Image Sensor Based on Multilayer PdSe2 /Pyramid Si Heterojunction

In this study, a highly sensitive and self-driven near-infrared (NIR) light photodetector based on PdSe₂ /pyramid Si heterojunction arrays, which are fabricated through simple selenization of predeposited Pd nanofilm on black Si, is demonstrated. The as-fabricated hybrid device exhibits excellent photoresponse performance in terms of a large on/off ratio of 1.6 × 10⁵ , a responsivity of 456 mA W^-1 , and a high specific detectivity of up to 9.97 × 10¹³ Jones under 980 nm illumination at zero bias. Such a relatively high sensitivity can be ascribed to the light trapping effect of the pyramid microstructure, which is confirmed by numerical modeling based on finite-difference time domain. On the other hand, thanks to the broad optical absorption properties of PdSe₂ , the as-fabricated device also exhibits obvious sensitivity to other NIR illuminations with wavelengths of 1300, 1550, and 1650 nm, which is beyond the photoresponse range of Si-based devices. It is also found that the PdSe₂ /pyramid Si heterojunction device can also function as an NIR light sensor, which can readily record both "tree" and "house" images produced by 980 and 1300 nm illumination, respectively.