Perovskite Light-Emitting Diodes with External Quantum Efficiency Exceeding 22% via Small-Molecule Passivation

Transparent radiative cooling cover window for flexible and foldable electronic displays

Transparent radiative cooling holds the promise to efficiently manage thermal conditions in various electronic devices without additional energy consumption. Radiative cooling cover windows designed for foldable and flexible displays could enhance cooling capacities in the ubiquitous deployment of flexible electronics in outdoor environments. However, previous demonstrations have not met the optical, mechanical, and moisture-impermeable criteria for such cover windows. Herein, we report transparent radiative cooling metamaterials with a thickness of 50 microns as a cover window of foldable and flexible displays by rational design and synthesis of embedding optically-modulating microstructures in clear polyimide. The resulting outcome not only includes excellent light emission in the atmospheric window under the secured optical transparency but also provides enhanced mechanical and moisture-impermeable properties to surpass the demands of target applications. Our metamaterials not only substantially mitigate the temperature rise in heat-generating devices exposed to solar irradiance but also enhance the thermal management of devices in dark conditions. The light output performance of light-emitting diodes in displays on which the metamaterials are deployed is greatly enhanced by suppressing the performance deterioration associated with thermalization.

Efficient Green Spin Light-Emitting Diodes Enabled by Ultrafast Energy- and Spin-Funneling in Chiral Perovskites

Introducing molecular chirality into perovskite crystal structures has enabled the control of carrier spin states, giving rise to circularly polarized luminescence (CPL) in thin films and circularly polarized electroluminescence (CPEL) in LEDs. Spin-LEDs can be fabricated either through a spin-filtering layer enabled by chiral-induced spin selectivity or a chiral emissive layer. The former requires a high degree of spin polarization and a compatible spinterface for efficient spin injection, which might not be easily integrated into LEDs. Alternatively, a chiral emissive layer can also generate circularly polarized electroluminescence, but the efficiency remains low and the fundamental mechanism is elusive. In this work, we report an efficient green LED based on quasi-two-dimensional (quasi-2D) chiral perovskites as the emitting layer (EML), where CPEL is directly produced without separate carrier spin injection. The optimized chiral perovskite thin films exhibited strong CPL at 535 nm with a photoluminescence quantum yield (PLQY) of 91% and a photoluminescence dissymmetry factor (glum) of 8.6 × 10-2. Efficient green spin-LEDs were successfully demonstrated, with a large EL dissymmetry factor (gEL) of 7.8 × 10-2 and a maximum external quantum efficiency (EQE) of 13.5% at room temperature. Ultrafast transient absorption (TA) spectroscopic study shows that the CPEL is generated from a rapid energy transfer accompanied by spin transfer from 2D to 3D perovskites. Our study not only demonstrates a reliable approach to achieve high performance spin-LEDs but also reveals the fundamental mechanism of CPEL with an emissive layer of chiral perovskites.

Vertically Oriented Perovskites with Minimized Intrinsic Boundaries for Efficient Photovoltaics

Intrinsic boundaries formed by grain stacks of randomly oriented perovskite crystallites seriously restrict charge transport in the resultant photovoltaic devices, whereas direct passivation of these defects remains unexplored, and it is desirable to modulate perovskite growth with uniform orientation. Herein, we report a simple but effective method to regulate perovskite crystallization by employing a volatile and polymerizable monomer of hydroxyethyl methacrylate (HEMA), which can simultaneously interact with both FA+ and Pb2+ via hydrogen and coordination bonding, respectively, to seed perovskite crystallization with accelerated nucleation and retarded crystal growth. Upon thermal annealing, the gradual volatilization and partial self-condensation of the HEMA drive the perovskite growth perpendicularly to the substrate, leading to largely suppressed defect states, improved crystallinity, and a reduced Young's modulus of the perovskite film. As a result, champion efficiencies exceeding 24 and 22% with improved operational and mechanical stability of the optimized perovskite solar cells based on rigid and flexible substrates were finally achieved.

Dielectric Regulation for Efficient Top-Emission Perovskite Light-Emitting Diodes with Suppressed Efficiency Roll-off

Perovskite light-emitting diodes (PeLEDs) have shown incalculable application potential in the fields of next-generation displays and light communication owing to the rapidly increased external quantum efficiencies (EQEs). However, most PeLEDs obtain a maximum EQE at small current density (J) region and suffer from severe efficiency roll-off in different extents. Herein, it is demonstrated that the dopant with large dipole moment like KBF4 facilitates the effective dielectric regulation of perovskite emissive layer. The increased dielectric constant lowers the exciton binding energy and suppresses the Auger recombination of the 2D/3D segregated perovskite structure, which improves the photoluminescence quantum yield remarkably at an excitation intensity up to 103 mW cm-2. Accordingly, the top-emission PeLED that delivers a high maximum EQE above 20% is fabricated and can retain EQE > 10% at an extremely high J of 708 mA cm-2. These results represent one of the most efficient top-emission PeLEDs with ultra-low efficiency roll-off, which provide a viable methodology for tuning the dielectric response of perovskite films for improved high radiance performance of perovskite electroluminescence devices.

Energy Transfer-Dominated Quasi-2D Blue Perovskite Light-Emitting Diodes

The bromide-chloride mixed quasi-two-dimensional (2D) perovskite, with a natural quantum well structure and tunable exciton binding energy, has gained significant attention for high-performance blue perovskite light-emitting diodes (PeLEDs). However, the relative importance of having a low trap state density or efficient exciton transfer for high-efficiency electroluminescence (EL) performance remains elusive. Here, two molecules with the benzoic acid group, sodium 4-fluorobenzoate (SFB) and 3,5-dibromobenzoic acid (DBA), are used to modulate the phase distribution and trap state to explore the effect between energy transfer and defect passivation. As a result, when the n = 1 phase is inhibited in both films, the DBA@SFB-modified perovskite films achieve a higher photoluminescence quantum yield (PLQY) than the SFB-modified perovskite films due to effective defect passivation. However, DBA@SFB-modified PeLEDs exhibit lower external quantum efficiency (EQE) compared to SFB-modified PeLEDs due to the poor exciton transfer between the low-dimensional phase. This demonstrates that passivation strategies may enhance photoluminescence through reducing nonradiative recombination, but the effect of phase distribution is pivotal for EL performance by efficient energy transfer in quasi-2D perovskites. Femtosecond time-resolved transient absorption measurements confirm the fastest carrier dynamics in SFB-modified perovskite films, further corroborating the above result. This work provides useful information about phase modulation and defect passivation for high-efficiency blue quasi-2D PeLEDs.

Precursor Engineering Induced High-Efficiency Electroluminescence of Quasi-Two-Dimensional Perovskites: A Synergistic Defect Inhibition and Passivation Approach

Despite light-emitting diodes (LEDs) based on quasi-two-dimensional (Q-2D) perovskites being inexpensive and exhibiting high performance, defects still limit the improvement of electroluminescence efficiency and stability by causing nonradiative recombination. Here, an organic molecule, 1-(o-tolyl) biguanide, is used to simultaneously inhibit and passivate defects of Q-2D perovskites via in situ synchronous crystallization. This molecule not only prevents surface bromine vacancies from forming through hydrogen bonding with the bromine of intermediaries but also passivates surface defects through its interaction with uncoordinated Pb. Via combination of defect inhibition and passivation, the trap density of Q-2D perovskite films can be significantly reduced, and the emission efficiency of the film can be improved. Consequently, the corresponding LED shows an external quantum efficiency of 24.3%, and its operational stability has been increased nearly 15 times.

New nanostructure perovskite-based light-emitting diode with superior light extraction efficiency enhancement

The external quantum efficiency (EQE) of a perovskite-based light-emitting diode (PELED) is a key indicator, comprising the internal quantum efficiency (IQE) and light extraction efficiency (LEE). Currently, enhancing EQE faces a major challenge in optimizing LEE. This study introduces an innovative structure to boost LEE, exploring various influencing parameters. The transition from a planar to a domical architecture leverages factors like the waveguiding effect, resulting in a remarkable tenfold increase in LEE, from 6 to 59%. Additionally, investigations into factors affecting LEE, such as altering dipole orientation, material-substrate contact angle, and layer thickness, reveal the potential for further improvement. The optimized structure attains an impressive LEE value of 74%.

Enhancing Light Outcoupling Efficiency via Anisotropic Low Refractive Index Electron Transporting Materials for Efficient Perovskite Light-Emitting Diodes

Thanks to the extensive efforts toward optimizing perovskite crystallization properties, high-quality perovskite films with near-unity photoluminescence quantum yield are successfully achieved. However, the light outcoupling efficiency of perovskite light-emitting diodes (PeLEDs) is impeded by insufficient light extraction, which poses a challenge to the further advancement of PeLEDs. Here, an anisotropic multifunctional electron transporting material, 9,10-bis(4-(2-phenyl-1H-benzo[d]imidazole-1-yl)phenyl) anthracene (BPBiPA), with a low extraordinary refractive index (ne ) and high electron mobility is developed for fabricating high-efficiency PeLEDs. The anisotropic molecular orientations of BPBiPA can result in a low ne of 1.59 along the z-axis direction. Optical simulations show that the low ne of BPBiPA can effectively mitigate the surface plasmon polariton loss and enhance the photon extraction efficiency in waveguide mode, thereby improving the light outcoupling efficiency of PeLEDs. In addition, the high electron mobility of BPBiPA can facilitate balanced carrier injection in PeLEDs. As a result, high-efficiency green PeLEDs with a record external quantum efficiency of 32.1% and a current efficiency of 111.7 cd A-1 are obtained, which provides new inspirations for the design of electron transporting materials for high-performance PeLEDs.

Defects in lead halide perovskite light-emitting diodes under electric field: from behavior to passivation strategies

Lead halide perovskites (LHPs) are emerging semiconductor materials for light-emitting diodes (LEDs) owing to their unique structure and superior optoelectronic properties. However, defects that initiate degradation of LHPs through external stimuli and prompt internal ion migration at the interfaces remain a significant challenge. The electric field (EF), which is a fundamental driving force in LED operation, complicates the role of these defects in the physical and chemical properties of LHPs. A deeper understanding of EF-induced defect behavior is crucial for optimizing the LED performance. In this review, the origins and characterization of defects are explored, indicating the influence of EF-induced defect dynamics on LED performance and stability. A comprehensive overview of recent defect passivation approaches for LHP bulk films and nanocrystals (NCs) is also provided. Given the ubiquity of EF, a summary of the EF-induced defect behavior can enhance the performance of perovskite LEDs and related optoelectronic devices.

Development of Quasi-Two-Dimensional Perovskites and Their Application in Light-Emitting Diodes

Quasi-two-dimensional (quasi-2D) perovskites have attracted much attention due to their outstanding properties, such as inherent quantum-well structure, strong dielectric and quantum confinement, large exciton binding energy, and high photoluminescence quantum yield. By virtue of these superior merits, quasi-2D perovskites have shown great potential for next-generation light-emitting diodes (LEDs). Herein, this review presents an overview of the basic properties of quasi-2D perovskites and their photoluminescence modulations by large organic cation engineering, monovalent cation engineering, halogen engineering, defect passivation engineering, and dimensionality engineering. Furthermore, the strategies of charge-transport layer optimization, interfacial engineering, light-outcoupling efficiency improvement, and operating stability improvement are summarized for fabricating high-performance quasi-2D perovskite LEDs (PeLEDs). Finally, the challenges and outlook for the future development of quasi-2D PeLEDs are unambiguously proposed.

Large-Area Flexible Perovskite Light-Emitting Diodes Enabled by Inkjet Printing

Metal halide perovskite light-emitting diodes (PeLEDs) are attracting increasing attention due to their potential applications in flat panel lighting and displays. The solution process, large-area fabrication, and flexibility are attractive properties of PeLEDs over traditional inorganic LEDs. However, it is still very challenging to deposit uniform perovskite films on flexible substrates using a blade or slot-die coating, as the flexible substrate is not perfectly flat. Here, the inkjet printing technique is adopted, and the key challenges are overcome step-by-step in preparing large-area films on flexible substrates. Double-hole transporting layers are first used and a wetting interfacial layer to improve the surface wettability so that the printed perovskite droplets can form a continuous wet film. The fluidic and evaporation dynamics of the perovskite wet layer is manipulated to suppress the coffee ring effect by solvent engineering. Uniform perovskite films are obtained finally on flexible substrates with different perovskite compositions. The peak external quantum efficiency of the inkjet-printed PeLEDs reaches 14.3%. Large-area flexible PeLEDs (4 × 7 cm2 ) also show very uniform emission. This work represents a significant step toward real applications of large-area PeLEDs in flexible flat-panel lighting.

Defect Passivation in Quasi-2D Perovskite Light-Emitting Diodes by an Ibuprofen Additive

It is well known that the inferior film morphology and the excessive surface/interface defect states are two obstacles to achieving high electroluminescence performance of quasi-2D perovskite light-emitting diodes (PeLEDs). To solve these problems, ibuprofen was introduced as an additive in the quasi-2D perovskite emitting layer. More efficient photoluminescence is demonstrated. Further, optimized quasi-2D PeLEDs with a current efficiency of 55.93 cd/A are confirmed and 5.7-fold enhancement in device stability is obtained. The physical mechanism of the remarkable improvement is investigated by kinds of measurements. Three aspects should be counted into it. First, the introduction of ibuprofen can passivate defects, thus making the quasi-2D perovskite emitting layer more dense and homogeneous. The reason should be that the C═O functional group and C═C bond in the benzene ring in ibuprofen can coordinate the unsaturated Pb2+ perovskite emitting layer. Meanwhile, the related exciton harvesting process is investigated. The proportion of the crystalline phases (small n and large n phase) can be tuned to benefit the energy funneling process. Finally, the analysis of the current density and voltage curves of the hole-dominated devices and the electron-dominated devices is conducted by utilizing the space charge-limited current (SCLC) methods.

Field-Induced Transport Anisotropy in Single-Crystalline All-Inorganic Lead-Halide Perovskite Nanowires

The dynamic crystal lattice of halide perovskites facilitates the coupled transport of ions and electrons, offering innovative concepts in semiconductor iontronic devices that surpass solar cell applications. However, a comprehensive understanding of the intricacies of coupled ionic and electronic transport at the microscale remains ambiguous, owing to the inhomogeneity in ploy-crystalline perovskite thin films. In this work, we employed one-dimensional (1D) single-crystalline CsPbBr3 nanowires (NWs) to investigate the electric field induced ionic transport. Upon poling by an external bias, the previously uniform NW exhibits highly anisotropic ionic transport, which is identified as the origin of the giant switchable photovoltaic effect by spatially resolved scanning photocurrent microscopy. The subsequent ultrafast scanning photoluminescence (PL) microscopy measurements demonstrate significant localization of photocarriers near one terminal of the device, which is attributed to the accumulation of halogen vacancies. In addition, thanks to the enhancement of the local electric field, the poled device shows a 10-fold increase of photoresponse speed. Our findings favor the scale-down of perovskite devices to the submicrometer scale, extending their applications in self-powered iontronic and optoelectronic devices.

Efficient sky-blue cesium lead bromide light-emitting diodes with enhanced stability via synergistic interfacial induction and polymer scaffold inhibition

All inorganic CsPbX3 perovskite has aroused broad interests in building efficient light-emitting devices with wide color gamut and flexible fabrication process. So far, the realization of high-performance blue perovskite light-emitting devices (PeLEDs) is still a critical challenge. Herein, we propose an interfacial induction strategy to generate low-dimensional CsPbBr3 with sky blue emission by employing γ-aminobutyric acid (GABA) modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The interaction between GABA and Pb2+ inhibited the formation of bulk CsPbBr3 phase. Further assisted by the polymer networks, the sky-blue CsPbBr3 film exhibited much improved stability under both photoluminescence and electrical excitation. This can be ascribed to the scaffold effect and the passivation function of the polymer. Consequently, the obtained sky-blue PeLEDs exhibited an average external quantum efficiency (EQE) of 5.67% (maximum of 7.21%) with a maximum brightness of 3308 cd/m2 and a working lifespan reaching 0.41 h. The strategy in this work provides a new opportunity for exploitation the full potential of blue PeLEDs towards application in lighting and display devices.

Highly Anisotropic Polarization Induced by Electrical Poling in Single-Crystalline All-Inorganic Perovskite Nanoplates

The coupled ionic and electronic transport in halide perovskites opens up new possibilities for semiconductor iontronic devices beyond solar cells. Nevertheless, the fundamental understanding of ionic behavior at the microscale remains vague, largely because of the inhomogeneity in polycrystalline thin films. Here, we show that the ion dynamics in single-crystalline perovskite nanoplates (NPs) are significantly different and that an external bias may induce highly anisotropic ionic transport in the NPs, thereby leading to a greatly enhanced local electric field. Using modified scanning photocurrent microscopy (SPCM), the origin of the photocurrent is pinpointed to the cathode region of the NP device, where subsequent energy dispersive spectroscopy (EDS) characterization confirms a large accumulation of halogen vacancies. In addition, the Kelvin probe force microscopy (KPFM) measurement demonstrates a strong built-in electric field within a submicron length near the cathode, which alters the local electronic structure for efficient photo carrier separation. Such field-induced ionic behavior deepens the understanding of ion dynamics in perovskites and promotes scale-down of perovskite micro- and nanoiontronic and ion-optoelectronic devices.

High Curvature PEDOT:PSS Transport Layer Toward Enhanced Perovskite Light-Emitting Diodes

The rapidly developed metal halide perovskite light-emitting diodes (PeLEDs) are considered as a promising candidate for next-generation display and illumination, but the unbalanced charge transport is still a hard-treat case to restrict its efficiency and operational stability. Here, a high curvature PEDOT:PSS transport layer is demonstrated via the self-assembly island-like structures by the incorporation of alkali metal salts. Benefiting from the dielectric confinement effect of the high curvature surface, the modified CsPbBr3 -based PeLEDs present a 2.1 times peak external quantum efficiency (EQE) from 6.75% to 14.23% and a 3.3 times half lifetime (T50 ) from 3.96 to 13.01 h. Besides, the PeLEDs show high luminance up to 44834 cd m-2 . Evidently, this work may provide a deep insight into the structure-activity relationship between the micro-structures at the PEDOT:PSS/perovskite interface and the performance of PeLEDs, and crack the codes for ameliorating the performance of PeLEDs via interfacial micro-structured regulation.

Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance

Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.

Realizing High Brightness Quasi-2D Perovskite Light-Emitting Diodes with Reduced Efficiency Roll-Off via Multifunctional Interface Engineering

Quasi-2D perovskites have recently flourished in the field of luminescence due to the quantum-confinement effect and the efficient energy transfer between different n phases resulting in exceptional optical properties. However, owing to the lower conductivity and poor charge injection, quasi-2D perovskite light-emitting diodes (PeLEDs) typically suffer from low brightness and high-efficiency roll-off at high current densities compared to 3D perovskite-based PeLEDs, which is undoubtedly one of the most critical issues in this field. In this work, quasi-2D PeLEDs with high brightness, reduced trap density, and low-efficiency roll-off are successfully demonstrated by introducing a thin layer of conductive phosphine oxide at the perovskite/electron transport layer interface. The results surprisingly show that this additional layer does not improve the energy transfer between multiple quasi-2D phases in the perovskite film, but purely improves the electronic properties of the perovskite interface. On the one hand, it passivates the surface defects of the perovskite film; on the other hand, it promotes electron injection and prevents hole leakage across this interface. As a result, the modified quasi-2D pure Cs-based device shows a maximum brightness of > 70,000 cd m-2 (twice that of the control device), a maximum external quantum efficiency (EQE) of > 10% and a much lower efficiency roll-off at high bias voltages.

Study of Glass Formation and Crystallization Kinetics in a 2D Metal Halide Perovskite Using Ultrafast Calorimetry

While crystalline 2D metal halide perovskites (MHPs) represent a well-celebrated semiconductor class, supporting applications in the fields of photovoltaics, emitters, and sensors, the recent discovery of glass formation in an MHP opens many new opportunities associated with reversible glass-crystalline switching, with each state offering distinct optoelectronic properties. However, the previously reported [S-(-)-1-(1-naphthyl)ethylammonium]2PbBr4 perovskite is a strong glass former with sluggish glass-crystal transformation time scales, pointing to a need for glassy MHPs with a broader range of compositions and crystallization kinetics. Herein we report glass formation for low-melting-temperature 1-MeHa2PbI4 (1-MeHa = 1-methyl-hexylammonium) using ultrafast calorimetry, thereby extending the range of MHP glass formation across a broader range of organic (fused ring to branched aliphatic) and halide (bromide to iodide) compositions. The importance of a slight loss of organic and hydrogen iodide components from the MHP in stabilizing the glassy state is elucidated. Furthermore, the underlying kinetics of glass-crystal transformation, including activation energies, crystal growth rate, Angell plot, and fragility index, is studied using a combination of kinetic, thermodynamic, and rheological modeling techniques. An inferred fast crystal growth rate of 0.21 m/s for 1-MeHa2PbI4 shows promise toward suitability in extended application spaces, for example, in metamaterials, nonvolatile memory, and optical and neuromorphic computing devices.

High-efficiency, flexible and large-area red/green/blue all-inorganic metal halide perovskite quantum wires-based light-emitting diodes

Metal halide perovskites have shown great promise as a potential candidate for next-generation solid state lighting and display technologies. However, a generic organic ligand-free and antisolvent-free solution method to fabricate highly efficient full-color perovskite light-emitting diodes has not been realized. Herein, by utilizing porous alumina membranes with ultra-small pore size as templates, we have successfully fabricated crystalline all-inorganic perovskite quantum wire arrays with ultrahigh density and excellent uniformity, using a generic organic ligand-free and anti-solvent-free solution method. The quantum confinement effect, in conjunction with the high light out-coupling efficiency, results in high photoluminescence quantum yield for blue, sky-blue, green and pure-red perovskite quantum wires arrays. Consequently, blue, sky-blue, green and pure-red LED devices with spectrally stable electroluminescence have been successfully fabricated, demonstrating external quantum efficiencies of 12.41%, 16.49%, 26.09% and 9.97%, respectively, after introducing a dual-functional small molecule, which serves as surface passivation and hole transporting layer, and a halide vacancy healing agent.

Fabrication of Highly Luminescent Quasi Two-Dimensional CsPbBr3 Perovskite Films in High Humidity Air for Light-Emitting Diodes

Perovskite light-emitting diodes (LEDs) have attracted extensive attention in recent years due to their outstanding performance and promise in lighting and display applications. However, the fabrication of perovskite LEDs usually requires a low-humidity atmosphere, which is unfavorable for industrial production. Herein, we report an effective strategy to fabricate highly luminescent quasi two-dimensional CsPbBr₃ perovskite films in an ambient atmosphere with a humidity up to 60%. We reveal that the hole transport layer (HTL) plays a significant role in the morphology and optical properties of the perovskite films. Using hydrophobic self-assembled monolayer materials as HTLs can remarkably improve the quality of the perovskite films processed in high humidity air. The resultant perovskite LEDs show reduced leakage current and significantly enhanced performance. Furthermore, surface treatment is conducted to prevent water invasion and promote radiative recombination in perovskite films and LEDs. Eventually, the perovskite LEDs exhibit bright green emission with an external quantum efficiency of 4.87%. The present work provides a feasible pathway to overcome the humidity limitation for obtaining bright perovskite films and LEDs, which would contribute to further reducing the fabrication cost of perovskite LEDs and promoting their applications.

Deep-Blue Perovskite Light-Emitting Diodes Realized by a Dynamic Interfacial Ion Exchange

The external quantum efficiency (EQE) of the sky-blue perovskite light-emitting diodes (PeLEDs) has reached 18.65%. However, the EQE of the deep-blue PeLEDs is still inferior to that of sky-blue PeLEDs, which restricts the PeLED application in displays. Herein, a novel dynamic interfacial ion-exchange technique is developed to obtain deep-blue PeLEDs. By spin-coating quaternary ammonium chloride on top of a quasi-2D green perovskite film, a 68 nm spectral transition from green light emission at 513 nm to deep-blue light emission at 445 nm has been successfully realized. To the best of our knowledge, it is the largest spectrum transition ever achieved. By further introducing tricyclohexylphosphine oxide into the perovskite precursor solution to passivate defects, high-quality deep-blue PeLEDs have been fabricated with color coordinates at (0.13, 0.06). The maximum EQE reaches 1.8%, and the peak luminance reaches 847 cd/m².

Advances in All-Inorganic Perovskite Nanocrystal-Based White Light Emitting Devices

Metal halide perovskites (MHPs) are exceptional semiconductors best known for their intriguing properties, such as high absorption coefficients, tunable bandgaps, excellent charge transport, and high luminescence yields. Among various MHPs, all-inorganic perovskites exhibit benefits over hybrid compositions. Notably, critical properties, including chemical and structural stability, could be improved by employing organic-cation-free MHPs in optoelectronic devices such as solar cells and light-emitting devices (LEDs). Due to their enticing features, including spectral tunability over the entire visible spectrum with high color purity, all-inorganic perovskites have become a focus of intense research for LEDs. This Review explores and discusses the application of all-inorganic CsPbX₃ nanocrystals (NCs) in developing blue and white LEDs. We discuss the challenges perovskite-based LEDs (PLEDs) face and the potential strategies adopted to establish state-of-the-art synthetic routes to obtain rational control over dimensions and shape symmetry without compromising the optoelectronic properties. Finally, we emphasize the significance of matching the driving currents of different LED chips and balancing the aging and temperature of individual chips to realize efficient, uniform, and stable white electroluminescence.

Trifunctional Trichloroacetic Acid Incorporated Mixed-Halide Perovskites for Spectrally Stable Blue Light-Emitting Diodes

Metal halide perovskites have won great recognition in light-emitting diodes (LEDs). Nevertheless, the development of blue perovskite LEDs is facing a bottleneck in improving the device performance. Although mixed chloride/bromide perovskites can achieve pure-blue emission straightforwardly, higher chloride content will induce the challenges of low photoluminescence quantum yield and poor spectra stability resulting from the chloride vacancy defects and resultant halide ion migration under an electric field. In this work, we introduce a reliable trifunctional additive trichloroacetic acid into mixed-halide perovskites, which can provide additional chloride to fill halide vacancies, passivate the uncoordinated Pb²⁺ ion defects, and promote the crystallization effectively. Owning to the utilization of trichloroacetic acid, the ultimate pure-blue perovskite LED obtains stable electroluminescent spectra at 477 nm under various bias and demonstrates a 5-fold external quantum efficiency improvement (up to 6.6%).

Vacuum-Deposited Inorganic Perovskite Light-Emitting Diodes with External Quantum Efficiency Exceeding 10% via Composition and Crystallinity Manipulation of Emission Layer under High Vacuum

Although vacuum-deposited metal halide perovskite light-emitting diodes (PeLEDs) have great promise for use in large-area high-color-gamut displays, the efficiency of vacuum-sublimed PeLEDs currently lags that of solution-processed counterparts. In this study, highly efficient vacuum-deposited PeLEDs are prepared through a process of optimizing the stoichiometric ratio of the sublimed precursors under high vacuum and incorporating ultrathin under- and upper-layers for the perovskite emission layer (EML). In contrast to the situation in most vacuum-deposited organic light-emitting devices, the properties of these perovskite EMLs are highly influenced by the presence and nature of the upper- and presublimed materials, thereby allowing us to enhance the performance of the resulting devices. By eliminating Pb° formation and passivating defects in the perovskite EMLs, the PeLEDs achieve an outstanding external quantum efficiency (EQE) of 10.9% when applying a very smooth and flat geometry; it reaches an extraordinarily high value of 21.1% when integrating a light out-coupling structure, breaking through the 10% EQE milestone of vacuum-deposited PeLEDs.

Comprehensive Passivation for High-Performance Quasi-2D Perovskite LEDs

Quasi-2D perovskites have demonstrated great application potential in light-emitting diodes (LEDs). Defect passivation with chemicals plays a critical role to achieve high efficiency. However, there are still challenges in comprehensively passivating the defects distributed at surface, bulk, and buried interface of quasi-2D perovskite emitting films, hindering the further improvement of device performance. Herein, 9,9-substituted fluorene derivatives with different terminal functional groups are developed tactfully to realize comprehensive passivation, which greatly contributes to reducing nonradiative recombination at surface, suppressing ion migration in bulk, and filling interfacial charge traps at buried interface, respectively. Eventually, quasi-2D perovskite LEDs have an increased external quantum efficiency from 18.2% to 23.2%, improved operation lifetime by more than six times and lower turn-on voltage simultaneously. Here the importance of comprehensive passivation is highlighted and guidelines for the design and application of passivators for perovskite optoelectronics are provided.

Insight into Diphenyl Phosphine Oxygen-Based Molecular Additives as Defect Passivators toward Efficient Quasi-2D Perovskite Light-Emitting Diodes

The introduction of additives has become an important method for enhancing the device performance of quasi-two-dimensional perovskite light-emitting diodes. In this work, we systematically studied the electronic and spatial effects of molecular additives on defect passivation abilities using the methyl, hydrogen, and hydroxyl groups substituted three diphenyl phosphine oxygen additives. The electron-donating conjugation effect of the hydroxyl group on diphenylphosphinic acid (OH-DPPO) leads to a more electron-rich region in OH-DPPO, and the hydroxyl group has a moderate steric hindrance. All these factors endow it with best passivation ability than the other two additives. Furthermore, ion migration was suppressed due to hydrogen bonding between the hydroxyl group and Br. Ultimately, the OH-DPPO passivated devices achieved an external quantum efficiency of 22.44% and a 6-fold improvement in lifetime. These findings provide guidance for developing multifunctional additives in the field of perovskite optoelectronics.

Bright and stable perovskite light-emitting diodes in the near-infrared range

Perovskite light-emitting diodes (LEDs) have attracted broad attention due to their rapidly increasing external quantum efficiencies (EQEs)1-15. However, most high EQEs of perovskite LEDs are reported at low current densities (<1 mA cm-2) and low brightness. Decrease in efficiency and rapid degradation at high brightness inhibit their practical applications. Here, we demonstrate perovskite LEDs with exceptional performance at high brightness, achieved by the introduction of a multifunctional molecule that simultaneously removes non-radiative regions in the perovskite films and suppresses luminescence quenching of perovskites at the interface with charge-transport layers. The resulting LEDs emit near-infrared light at 800 nm, show a peak EQE of 23.8% at 33 mA cm-2 and retain EQEs more than 10% at high current densities of up to 1,000 mA cm-2. In pulsed operation, they retain EQE of 16% at an ultrahigh current density of 4,000 mA cm-2, along with a high radiance of more than 3,200 W s-1 m-2. Notably, an operational half-lifetime of 32 h at an initial radiance of 107 W s-1 m-2 has been achieved, representing the best stability for perovskite LEDs having EQEs exceeding 20% at high brightness levels. The demonstration of efficient and stable perovskite LEDs at high brightness is an important step towards commercialization and opens up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

Improved Performance of All-Inorganic Perovskite Light-emitting Diodes via Nanostructured Stamp Imprinting

Halide perovskites are emerging emitters with excellent optoelectronic properties. Contrary to the large grain fabrication goal in perovskite solar cells, perovskite light-emitting diodes (PeLEDs) based on small grain enable efficient radiative recombination because of relatively higher charge carrier densities due to spatial confinement. However, achieving small-sized grain growth with superior crystal quality and film morphology remains a challenge. In this work, we demonstrated a nanostructured stamp thermal imprinting strategy to boost the surface coverage and improve the crystalline quality of CsPbBr₃ film, particularly confine the grain size, leading to the improvement of luminance and efficiency of PeLEDs. We improved the thermal imprinting process utilizing the nanostructured stamp to selectively manipulate the nucleation and growth in the nanoscale region and acquire small-sized grain accompanied by improved crystal quality and surface morphology of the film. By optimizing the imprinting pressure and the period of the nanostructures, appropriate grain size, high surface coverage, small surface roughness and improved crystallization could be achieved synchronously. Finally, the maximum luminance and efficiency of PeLEDs achieved by nanostructured stamp imprinting with a period of 320 nm are 67600 cd/m² and 16.36 cd/A, respectively. This corresponds to improvements of 123 % in luminance and 100 % in efficiency, compared to that of PeLEDs without the imprinting.

Unveiling the degraded electron durability in reduced-dimensional perovskites

The operational stability of reduced-dimensional metal halide perovskites (RD-MHPs) lags far behind the practical requirements for future high-definition displays. Thereinto, the electron durability of RD-MHPs plays a critical role in stable LEDs during continuous operation, however, it still lacks adequate research and a deep understanding. Herein, the electron durability and deterioration mechanism of phenethylammonium (PEA⁺)-modified RD-MHPs are systematically conducted through an in situ photoelectron spectroscopy technique by implementing tunable electron-beam radiation to simulate device operation. The formation of detrimental metallic lead (Pb⁰) caused by the reduction of lead ions (Pb²⁺) is observed along with the decomposition of PEA⁺ under electron-beam radiation, thereby changing the photophysical properties of PEA⁺-doped RD-MHPs. These results provide deep insight into the process of how injected electrons affect the performance of PEA⁺-doped perovskite LEDs, which may also provide potential guidance for designing robust and effective organic spacers for RD-MHPs.

Control of n-Phase Distribution in Quasi Two-Dimensional Perovskite for Efficient Blue Light-Emitting Diodes

Pure-bromide quasi-2D perovskite (PBQ-2DP) promises high-performance light-emitting diodes (LEDs), while a challenge remains on control over its n-phase distribution for bright true-blue emission. Present work addresses the challenge through exploring the passivation molecule of amino acid with reinforced binding energy, which generates narrow n-phase distribution preferentially at n = 3 with true blue emission at 478 nm. Consequently, a peak external quantum efficiency of 5.52% and a record brightness of 512 cd m-2 are achieved on the PBQ-2DP-based true blue PeLED, these both values located among the top in the records of similar devices. We further reveal that the electron-phonon coupling results in the red-shifted emission in the PBQ-2DP film, suggesting that the view of n-phase distribution dominated true-blue emission in PBQ-2DP needs to be revisited, pointing out a guideline of electron-phonon coupling suppression to relieve the strait of realizing true blue or even deep blue emission in the PBQ-2DP film.

4-Trifluorophenylammonium Iodide-Based Dual Interfacial Modification Engineering toward Improved Efficiency and Stability of SnO2-Based Perovskite Solar Cells

Passivation engineering has been identified as an effective strategy to eliminate the targeted interfacial defects for improving the efficiency and stability of perovskite solar cells (PSCs). Herein, 4-trifluorophenylammonium iodide (CF₃PhAI) is presented as a multifunctional passivation agent to modify buried SnO₂/perovskite and perovskite/hole transport layer (HTL) interfaces. Upon incorporation of CF₃PhAI between SnO₂ and perovskite, CF₃PhAI can chemically link to SnO₂ via Lewis coordination and electrostatic coupling, thereby effectively passivating under-coordinated Sn and filling the oxygen vacancy. Meanwhile, CF₃PhAI helps anchor PbI₂ and organic cations (MA⁺/FA⁺) to control the crystallization of the perovskite. Consequently, reduced interfacial defects, homogeneous perovskite crystallites, and better energetic alignment can be simultaneously achieved. When CF₃PhAI was further used to modify the perovskite/HTL interface, the fabricated PSCs yielded an impressive power conversion efficiency of 23.06% together with negligible J-V hysteresis. The unencapsulated devices exhibited long-term stability in wet conditions (91.8% efficiency retention after 1000 h) due to the water-resistant CF₃PhAI. We also achieved good light soaking stability, maintaining 86.1% of its initial efficiency after aging for 720 h. Overall, our finding provides a promising strategy for modifying the dual contact interfaces of PSCs toward improved efficiency and stability.

Spatial Control of the Hole Accumulation Zone for Hole-Dominated Perovskite Light-Emitting Diodes by Inserting a CsAc Layer

Perovskites show efficient electroluminescence and are expected to have wide applications in light-emitting diodes (LEDs). However, owing to the unbalanced electron-hole transport properties of some highly luminescent perovskites, a fundamental challenge is that the exciton recombination zone of perovskite LEDs (PeLEDs) typically overlaps with an accumulation of the major carrier. It is known to reduce the performances of PeLEDs, leading to a reduction of efficiency and operation stability due to Auger recombination. To address this issue in a hole-dominated blue PeLED, we propose to insert a cesium acetate (CsAc) layer between the hole transport layer (HTL) and the hole-dominant perovskite layer. Electronic properties indicate that the hole accumulation zone of the device with the CsAc layer shifts away from the perovskite/ETL interface, i.e., the recombination zone, to the HTL/CsAc interface. Separation of the hole accumulation region and the exciton recombination zones substantially suppresses exciton quenching. Moreover, the CsAc layer can also improve the photophysical properties of the perovskite film by providing an extra Cs source to interact with the defect site of unreacted PbBr₂ in the perovskite film and enhance the crystallinity of the perovskite with an enlarged crystal grain size. As a result, the external quantum efficiency (EQE) of the sky-blue PeLEDs shows considerable improvement from 5.3 to 9.2% upon inserting the CsAc layer.

A Multifunctional "Halide-Equivalent" Anion Enabling Efficient CsPb(Br/I)3 Nanocrystals Pure-Red Light-Emitting Diodes with External Quantum Efficiency Exceeding 23

Pure-red perovskite LEDs (PeLEDs) based on CsPb(Br/I)₃ nanocrystals (NCs) usually suffer from a compromise in emission efficiency and spectral stability on account of the surface halide vacancies-induced nonradiative recombination loss, halide phase segregation, and self-doping effect. Herein, a "halide-equivalent" anion of benzenesulfonate (BS^- ) is introduced into CsPb(Br/I)₃ NCs as multifunctional additive to simultaneously address the above challenging issues. Joint experiment-theory characterizations reveal that the BS^- can not only passivate the uncoordinated Pb²⁺ -related defects at the surface of NCs, but also increase the formation energy of halide vacancies. Moreover, because of the strong electron-withdrawing property of sulfonate group, electrons are expected to transfer from the CsPb(Br/I)₃ NC to BS^- for reducing the self-doping effect and altering the n-type behavior of CsPb(Br/I)₃ NCs to near ambipolarity. Eventually, synergistic boost in device performance is achieved for pure-red PeLEDs with CIE coordinates of (0.70, 0.30) and a champion external quantum efficiency of 23.5%, which is one of the best value among the ever-reported red PeLEDs approaching to the Rec. 2020 red primary color. Moreover, the BS^- -modified PeLED exhibits negligible wavelength shift under different operating voltages. This strategy paves an efficient way for improving the efficiency and stability of pure-red PeLEDs.

Suppressing phase disproportionation in quasi-2D perovskite light-emitting diodes

Electroluminescence efficiencies and stabilities of quasi-two-dimensional halide perovskites are restricted by the formation of multiple-quantum-well structures with broad and uncontrollable phase distributions. Here, we report a ligand design strategy to substantially suppress diffusion-limited phase disproportionation, thereby enabling better phase control. We demonstrate that extending the π-conjugation length and increasing the cross-sectional area of the ligand enables perovskite thin films with dramatically suppressed ion transport, narrowed phase distributions, reduced defect densities, and enhanced radiative recombination efficiencies. Consequently, we achieved efficient and stable deep-red light-emitting diodes with a peak external quantum efficiency of 26.3% (average 22.9% among 70 devices and cross-checked) and a half-life of ~220 and 2.8 h under a constant current density of 0.1 and 12 mA/cm², respectively. Our devices also exhibit wide wavelength tunability and improved spectral and phase stability compared with existing perovskite light-emitting diodes. These discoveries provide critical insights into the molecular design and crystallization kinetics of low-dimensional perovskite semiconductors for light-emitting devices.

Efficient Perovskite Light-Emitting Diodes by Buried Interface Modification with Triphenylphosphine Oxide

Metal halide perovskite films are prepared mainly by solution-based methods. However, the preparation process is prone to produce massive defects at the interface between the perovskite emitting layer and the charge transport layers, limiting the perovskite light-emitting diode device performance. Aiming at this problem, researchers have proposed many effective strategies to passivate these interface defects. However, most previous research studies only focus on modifying the perovskite top interface, and very few reports deal with the buried interface. Here, we deposited triphenylphosphine oxide (TPPO) molecules between the perovskite and the hole transport layer (HTL) and realized the buried interface modification. Adding TPPO avoids the contact recombination of the perovskite and HTL and improves the film quality by increasing the substrate wettability. Moreover, the lone pair electrons of P═O can interact with the uncoordinated lead (Pb²⁺) of the perovskite and passivate halogen vacancy defects, and the insulation property of TPPO helps to balance the injection of holes and electrons. As a result, a maximum external quantum efficiency (EQE_max) of 21.01% was obtained with an average of 18.4 ± 0.9% over 30 devices, and the device reproducibility was greatly enhanced.

Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

Formamidinium lead iodide (FAPbI₃) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI₃ perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI₃, two-dimensional FA₂FA_n-1Pb_nI_3n+1, and three-dimensional α-FAPbI₃, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI₃-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.

Promoting Energy Transfer Between Quasi-2D Perovskite Layers Toward Highly Efficient Red Light-Emitting Diodes

Although tremendous progress has recently been made in quasi-2D perovskite light-emitting diodes (PeLEDs), the performance of red PeLEDs emitting at ≈650-660 nm, which have wide prospects for application in photodynamic therapy, is still limited by an inefficient energy transfer process between the quasi-2D perovskite layers. Herein, a symmetric molecule of 3,3'-(9H-fluorene-9,9-diyl)dipropanamide (FDPA) is designed and developed with two functional acylamino groups and incorporated into the quasi-2D perovskites as the additive for achieving high-performance red PeLEDs. It is demonstrated that the agent can simultaneously diminish the van der Waals gaps between individual perovskite layers and passivate uncoordinated Pb²⁺ related defects at the surface and grain boundaries of the quasi-2D perovskites, which truly results in an efficient energy transfer in the quasi-2D perovskite films. Consequently, the red PeLEDs emitting at 653 nm with a peak external quantum efficiency of 18.5% and a maximum luminance of 2545 cd m^-2 are achieved, which is among the best performing red quasi-2D PeLEDs emitting at ≈650-660 nm. This work opens a way to further improve the electroluminescence performance of red PeLEDs.

Regulating the phase distribution of quasi-2D perovskites using a three-dimensional cyclic molecule toward improved light-emitting performance

In this study, a molecule with a three-dimensional (3D) cyclic structure, a cryptand, is demonstrated as an effective additive for the quasi-two-dimensional (quasi-2D) PEA₂Cs_n-1Pb_nBr_3n+1 (n = 3, herein) to improve its light-emitting performance. The cryptand can effectively regulate the phase distribution of the quasi-2D perovskite through its intense interaction with PbBr₂, benefitting from its cage-like structure that can better capture the Pb²⁺ ions. Due to the inhibited growth of the low-n phases, a much-concentrated phase distribution is achieved for the cryptand-containing films. Moreover, its constituent O/N atoms can passivate the uncoordinated Pb²⁺ ions to improve the film quality. Such a synergistic effect thereby facilitates the charge/energy transfer among the multiple phases and reduces the non-radiative recombination. As a result, the quasi-2D perovskite light-emitting diode (PeLED) with the optimized cryptand doping ratio is shown to deliver the highest luminance (L_max) of 15 532 cd m^-2 with a highest external quantum efficiency (EQE) of 4.02%. Compared to the pristine device, L_max is enhanced by ∼5 times and EQE is enhanced by ∼10 times.

Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability

In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆^- octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM⁺ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI₃ NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI₃ NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10^-11 A, a responsivity of up to 0.237 A W^-1, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%.

Stability of Perovskite Light-Emitting Diodes: Existing Issues and Mitigation Strategies Related to Both Material and Device Aspects

Metal halide perovskites combine excellent electronic and optical properties, such as defect tolerance and high photoluminescence efficiency, with the benefits of low-cost, large-area, solution-based processing. Composition- and dimension-tunable properties of perovskites have already been utilized in bright and efficient light-emitting diodes (LEDs). At the same time, there are still great challenges ahead to achieving operational and spectral stability of these devices. In this review, the origins of instability of perovskite materials, and reasons for their degradation in LEDs are considered. Then, strategies for improving the stability of perovskite materials are reviewed, such as compositional engineering, dimensionality control, defect passivation, suitable encapsulation matrices, and fabrication of core/shell perovskite nanocrystals. For improvement of the operational stability of perovskite LEDs, the use of inorganic charge-transport layers, optimization of charge balance, and proper thermal management are considered. The review is concluded with a detailed account of the current challenges and a perspective on the key approaches and opportunities on how to reach the goal of stable, bright, and efficient perovskite LEDs.

Carbazole-Containing Polymer-Assisted Trap Passivation and Hole-Injection Promotion for Efficient and Stable CsCu2 I3 -Based Yellow LEDs

Perovskite light-emitting diodes (LEDs) are emerging light sources for next-generation lighting and display technologies; however, their development is greatly plagued by difficulty in achieving yellow electroluminescence, environmental instability, and lead toxicity. Copper halide CsCu₂ I₃ with intrinsic yellow emission emerges as a highly promising candidate for eco-friendly LEDs, but the electroluminescent performance is limited by defect-related nonradiative losses and inefficient charge transport/injection. To solve these issues, a hole-transporting poly(9-vinlycarbazole) (PVK)-incorporated engineering into CsCu₂ I₃ emitter is proposed. PVK with carbazole groups is permeated at the grain boundaries of CsCu₂ I₃ films by interacting with the uncoordinated Cu⁺ , reducing the Cu_Cs and Cu_I antisite defects to increase the radiative recombination and enhancing the hole mobility to balance the charge transport/injection, resulting in substantially enhanced device performances. Eventually, the yellow LEDs exhibit an 8.5-fold enhancement of external quantum efficiency, and the half-lifetime reaches 14.6 h, representing the most stable yellow LEDs based on perovskite systems reported so far.

Red Perovskite Light-Emitting Diodes with Efficiency Exceeding 25% Realized by Co-Spacer Cations

Perovskite light-emitting diodes (PeLEDs) have received great attention in recent years due to their narrow emission bandwidth and tunable emission spectrum. Efficient red emission is one of most important parts for lighting and displays. Quasi-2D perovskites can deliver high emission efficiency due to the strong carrier confinement, while the external quantum efficiencies (EQE) of red quasi-2D PeLEDs are inefficient at present, which is due to the complex distribution of different n-value phases in quasi-2D perovskite films. In this work, the phase distribution of the quasi-2D perovskite is finely controlled by mixing two different large organic cations, which effectively reduces the amount of smaller n-index phases, meanwhile the passivation of lead and halide defects in perovskite films is realized. Accordingly, the PeLEDs show 25.8% EQE and 1300 cd m^-2 maximum brightness at 680 nm, which exhibits the highest performance for red PeLEDs up to now.

Stable Yellow Light-Emitting Diodes Based on Quasi-Two-Dimensional Perovskites

Perovskite light-emitting diodes (PeLEDs) show great potential in display and lighting because of their tunable wavelength, narrow emission bandwidths, and high color purity. Currently, the external quantum efficiency (EQE) of red and green PeLEDs has reached >23%. However, yellow PeLEDs are still rarely reported because of phase separation in mixed-halide perovskites and the coexistence of multiple phases in quasi-two-dimensional (quasi-2D) perovskites L₂A_n-1B_nX_3n+1 (n = 1, 2, 3, ...), where L is a bulky organoammonium ligand. Here, we fabricate stable yellow PeLEDs by manipulating the phase distribution and incorporating rubidium cations (Rb⁺) in quasi-2D perovskites. The transient absorption results confirm that alkylammonium ligand butyl ammonium (BA) has a narrower phase distribution than phenylethyl ammonium (PEA) in the quasi-2D perovskites, resulting in a more blue-shifted emission peak. We further incorporate a proper molar ratio of Rb⁺ in the (BA)₂CsPb₂I₇ perovskite to blue-shift the emission peak to the yellow range. Finally, the yellow PeLEDs exhibit an EQE of 3.5%, and the stable emission peak is located at 595 nm. Our work provides a useful approach for the fabrication of highly efficient and stable yellow PeLEDs.

Perovskite-Gallium Nitride Tandem Light-Emitting Diodes with Improved Luminance and Color Tunability

Tandem structures with different subpixels are promising for perovskite-based multicolor electroluminescence (EL) devices in ultra-high-resolution full-color displays; however, realizing excellent luminance- and color-independent tunability considering the low brightness and stability of blue perovskite light-emitting diodes (PeLEDs) remains a challenge. Herein, a bright and stable blue gallium nitride (GaN) LED is utilized for vertical integration with a green MAPbBr₃ PeLED, successfully achieving a Pe-GaN tandem LED with independently tunable luminance and color. The electronic and photonic co-excitation (EPCE) effect is found to suppress the radiative recombination and current injection of PeLEDs, leading to degraded luminance and current efficiency under direct current modulation. Accordingly, the pulse-width modulation is introduced to the tandem device with a negligible EPCE effect, and the average hybrid current efficiency is significantly improved by 139.5%, finally achieving a record tunable luminance (average tuning range of 16631 cd m^-2 at an arbitrary color from blue to green) for perovskite-based multi-color LEDs. The reported excellent independent tunability can be the starting point for perovskite-based multicolor EL devices, enabling the combination with matured semiconductor technologies to facilitate their commercialization in advanced display applications with ultra-high resolution.