Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Excitons at the interface of 2D TMDs and molecular semiconductors

Van der Waals heterostructures (vdWHs) of vertically stacked two-dimensional (2D) atomic crystals have been used to elicit intriguing phenomena stemming from strong electronic correlations, magnetic textures, and interlayer excitons spawned at the heterointerface. However, vdWHs comprised of heterointerfaces between these 2D atomic crystal lattices and molecular assemblies are emerging as equally intriguing platforms supporting properties to be harnessed for photovoltaic energy conversion, photodetection, spin-selective charge injection, and quantum emission. In this perspective, we summarize recent research examining exciton dynamics in heterostructures between semiconducting 2D transition metal dichalcogenides and molecular organic semiconductors. We discuss methods for assembly of these heterostructures, the nature of interlayer or charge-transfer excitons at transition-metal dichalcogenide (TMD)-molecule interfaces, explicit exciton transfer between organics and TMDs, and other interfacial phenomena driven by the merger of these two material classes. We also suggest key new research directions extending the remit of these 2D atomic-molecular lattice heterointerfaces into the domains of condensed matter physics, quantum sensing, and energy conversion.

Ab Initio Modeling of Mixed-Dimensional Heterostructures: A Path Forward

Understanding the electronic structure of mixed-dimensional heterostructures is essential for maximizing their application potential. However, accurately modeling such interfaces is challenging due to the complex interplay between the subsystems. We employ a computational framework integrating first-principles methods, including GW, density functional theory (DFT), and the polarizable continuum model, to elucidate the electronic structure of mixed-dimensional heterojunctions formed by free-base phthalocyanines and monolayer molybdenum disulfide. We assess the impact of dielectric screening across various scenarios, from isolated molecules to organic films on a substrate-supported monolayer. Our findings show that while polarization effects cause significant renormalization of molecular energy levels, band energies and alignments in the most relevant setup can be accurately predicted through DFT simulations of the individual subsystems. Additionally, we analyze orbital hybridization, revealing potential pathways for interfacial charge transfer. This study offers new insights into hybrid inorganic/organic interfaces and provides a practical computational protocol suitable for scaled-up studies.

Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits

Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.

Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions

Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.

Enthalpy-uphill exciton dissociation in organic/2D heterostructures promotes free carrier generation

Despite the large binding energy of charge transfer (CT) excitons in type-II organic/2D heterostructures, it has been demonstrated that free carriers can be generated from CT excitons with a long lifetime. Using a model fluorinated zine phthalocyanine (F8ZnPc)/monolayer-WS2 interface, we find that CT excitons can dissociate spontaneously into free carriers despite it being an enthalpy-uphill process. Specifically, it is observed that CT excitons can gain an energy of 250 meV in 50 ps and dissociate into free carriers without any applied electric field. This observation is surprising because excited electrons typically lose energy to the environment and relax to lower energy states. We hypothesize that this abnormal enthalpy-uphill CT exciton dissociation process is driven by entropy gain. Kinetically, the entropic driving force can also reduce the rate for the reverse process - the conversion of free electron-hole pairs back to CT excitons. Hence, this mechanism can potentially explain the very long carrier lifetime observed in organic/2D heterostructures.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Nonadiabatic Dynamics Simulations for Photoinduced Processes in Molecules and Semiconductors: Methodologies and Applications

Nonadiabatic dynamics (NAMD) simulations have become powerful tools for elucidating complicated photoinduced processes in various systems from molecules to semiconductor materials. In this review, we present an overview of our recent research on photophysics of molecular systems and periodic semiconductor materials with the aid of ab initio NAMD simulation methods implemented in the generalized trajectory surface-hopping (GTSH) package. Both theoretical backgrounds and applications of the developed NAMD methods are presented in detail. For molecular systems, the linear-response time-dependent density functional theory (LR-TDDFT) method is primarily used to model electronic structures in NAMD simulations owing to its balanced efficiency and accuracy. Moreover, the efficient algorithms for calculating nonadiabatic coupling terms (NACTs) and spin-orbit couplings (SOCs) have been coded into the package to increase the simulation efficiency. In combination with various analysis techniques, we can explore the mechanistic details of the photoinduced dynamics of a range of molecular systems, including charge separation and energy transfer processes in organic donor-acceptor structures, ultrafast intersystem crossing (ISC) processes in transition metal complexes (TMCs), and exciton dynamics in molecular aggregates. For semiconductor materials, we developed the NAMD methods for simulating the photoinduced carrier dynamics within the framework of the Kohn-Sham density functional theory (KS-DFT), in which SOC effects are explicitly accounted for using the two-component, noncollinear DFT method. Using this method, we have investigated the photoinduced carrier dynamics at the interface of a variety of van der Waals (vdW) heterojunctions, such as two-dimensional transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and perovskites-related systems. Recently, we extended the LR-TDDFT-based NAMD method for semiconductor materials, allowing us to study the excitonic effects in the photoinduced energy transfer process. These results demonstrate that the NAMD simulations are powerful tools for exploring the photodynamics of molecular systems and semiconductor materials. In future studies, the NAMD simulation methods can be employed to elucidate experimental phenomena and reveal microscopic details as well as rationally design novel photofunctional materials with desired properties.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Hybrid Heterostructures to Generate Long-Lived and Mobile Photocarriers in Graphene

We report the generation of long-lived and highly mobile photocarriers in hybrid van der Waals heterostructures that are formed by monolayer graphene, few-layer transition metal dichalcogenides, and the organic semiconductor F₈ZnPc. Samples are fabricated by dry transfer of mechanically exfoliated MoS₂ or WS₂ few-layer flakes on a graphene film, followed by deposition of F₈ZnPc. Transient absorption microscopy measurements are performed to study the photocarrier dynamics. In heterostructures of F₈ZnPc/few-layer-MoS₂/graphene, electrons excited in F₈ZnPc can transfer to graphene and thus be separated from the holes that reside in F₈ZnPc. By increasing the thickness of MoS₂, these electrons acquire long recombination lifetimes of over 100 ps and a high mobility of 2800 cm² V^-1 s^-1. Graphene doping with mobile holes is also demonstrated with WS₂ as the middle layers. These artificial heterostructures can improve the performance of graphene-based optoelectronic devices.

Discovery of Type II Interlayer Trions

In terms of interlayer trions, electronic excitations in van der Waals heterostructures (vdWHs) can be classified into Type I (i.e., two identical charges in the same layer) and Type II (i.e., two identical charges in the different layers). Type I interlayer trions are investigated theoretically and experimentally. By contrast, Type II interlayer trions remain elusive in vdWHs, due to inadequate free charges, unsuitable band alignment, reduced Coulomb interactions, poor interface quality, etc. Here, the first observation of Type II interlayer trions is reported by exploring band alignments and choosing an atomically thin organic-inorganic system-monolayer WSe₂ /bilayer pentacene heterostructure (1L + 2L HS). Both positive and negative Type II interlayer trions are electrically tuned and observed via PL spectroscopy. In particular, Type II interlayer trions exhibit in-plane anisotropic emission, possibly caused by their unique spatial structure and anisotropic charge interactions, which is highly correlated with the transition dipole moment of pentacene. The results pave the way to develop excitonic devices and all-optical circuits using atomically thin organic-inorganic bilayers.

Tip-Induced and Electrical Control of the Photoluminescence Yield of Monolayer WS2

The photoluminescence (PL) of monolayer tungsten disulfide (WS₂) is locally and electrically controlled using the nonplasmonic tip and tunneling current of a scanning tunneling microscope (STM). The spatial and spectral distribution of the emitted light is determined using an optical microscope. When the STM tip is engaged, short-range PL quenching due to near-field electromagnetic effects is present, independent of the sign and value of the bias voltage applied to the tip-sample tunneling junction. In addition, a bias-voltage-dependent long-range PL quenching is measured when the sample is positively biased. We explain these observations by considering the native n-doping of monolayer WS₂ and the charge carrier density gradients induced by electron tunneling in micrometer-scale areas around the tip position. The combination of wide-field PL microscopy and charge carrier injection using an STM opens up new ways to explore the interplay between excitons and charge carriers in two-dimensional semiconductors.

Interfacial Coupling and Modulation of van der Waals Heterostructures for Nanodevices

In recent years, van der Waals heterostructures (vdWHs) of two-dimensional (2D) materials have attracted extensive research interest. By stacking various 2D materials together to form vdWHs, it is interesting to see that new and fascinating properties are formed beyond single 2D materials; thus, 2D heterostructures-based nanodevices, especially for potential optoelectronic applications, were successfully constructed in the past few decades. With the dramatically increased demand for well-controlled heterostructures for nanodevices with desired performance in recent years, various interfacial modulation methods have been carried out to regulate the interfacial coupling of such heterostructures. Here, the research progress in the study of interfacial coupling of vdWHs (investigated by Photoluminescence, Raman, and Pump-probe spectroscopies as well as other techniques), the modulation of interfacial coupling by applying various external fields (including electrical, optical, mechanical fields), as well as the related applications for future electrics and optoelectronics, have been briefly reviewed. By summarizing the recent progress, discussing the recent advances, and looking forward to future trends and existing challenges, this review is aimed at providing an overall picture of the importance of interfacial modulation in vdWHs for possible strategies to optimize the device's performance.

Infrared Light Emission Devices Based on Two-Dimensional Materials

Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.

A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing

Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS₂/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored via a surface acceptor (ZnPc) for subthreshold operation. In addition to usual synaptic plasticity, the memory device exhibits highly non-linear conductance (rectification ratio >10⁶), allowing bidirectional yet only negative/inhibitory current to pass through. We demonstrate that in a lateral coupling network, such a float gate memory device resembles the key lateral inhibition function of horizontal cells for the formation of an ON-center/OFF-surround receptive field. When combined with synaptic plasticity, the lateral inhibition weights are further tunable to enable adjustable edge enhancement for early visual processing. Our results here hopefully open a new scheme toward early sensory perception via lateral inhibitory synaptic transistors.

Enhanced excitonic features in an anisotropic ReS2/WSe2 heterostructure

Two-dimensional (2D) semiconductors have opened new horizons for future optoelectronic applications through efficient light-matter and many-body interactions at quantum level. Anisotropic 2D materials like rhenium disulphide (ReS₂) present a new class of materials with polarized excitonic resonances. Here, we demonstrate a WSe₂/ReS₂ heterostructure which exhibits a significant photoluminescence quenching at room temperature as well as at low temperatures. This indicates an efficient charge transfer due to the electron-hole exchange interaction. The band alignment of two materials suggests that electrons optically injected into WSe₂ are transferred to ReS₂. Polarization resolved luminescence measurements reveal two additional polarization-sensitive exciton peaks in ReS₂ in addition to the two conventional exciton resonances X₁ and X₂. Furthermore, for ReS₂ we observe two charged excitons (trions) with binding energies of 18 meV and 15 meV, respectively. The bi-excitons of WSe₂ become polarization sensitive and inherit polarizing properties from the underlying ReS₂ layers, which act as patterned substrates for top layer. Overall, our findings provide a better understanding of optical signatures in 2D anisotropic materials.

Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields

Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.

Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly developed optoelectronics. Here we demonstrate the fabrication and characterization of an ITO/n-IGZO/p-GeSe transparent selective wavelength photodetector. The wavelength-dependent photovoltaic behavior of the n-IGZO/p-GeSe heterostructure under UV-Visible laser light shifts the I-V curves down with positive V_oc and negative I_sc values of about 0.12 V and -49 nA and 0.09 V and -17 nA, respectively. Interestingly, when an NIR laser irradiated the device, the I-V curves shifted up with negative V_oc and positive I_sc values of about -0.11 V and 45 nA, respectively. This behavior is attributed to the free carrier concentration induced by photogenerated carriers across the device at different points that varied with the wavelength-dependent photon absorption. Consequently, the direction of the electric field polarity across the junction can be flipped. This study demonstrates a zero-bias near-infrared (NIR) photodetector with a high photoresponsivity of 538.9 mA W^-1, a fast rise time of 25.2 ms, and a decay time of 25.08 ms. Furthermore, we observed a detectivity (D) of 8.4 × 10⁹ Jones, a normalized photocurrent to dark current ratio (NPDR) of 2.8 × 10¹⁰ W^-1, and a noise equivalent power (NEP) of 2.2 × 10^-14 W Hz^-1/2. Our strategy opens alternative possibilities for scalable, low-cost, multifunctional transparent near-infrared photosensors with selective wavelength photodetection.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS₂ nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 10⁴, fast response of 50 μs, and high detectivity of 1.64 × 10¹¹ Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

Properties at the interface of the pristine CdSe and core-shell CdSe-ZnS quantum dots with ultrathin monolayers of two-dimensional MX2 (M: Mo, W; X: S, Se, Te) heterostructures from density functional theory

In this work, eight van der Waals heterojunctions based on CdSe or CdSe-ZnS quantum dots (QDs) and four commonly used two-dimensional transition metal dichalcogenides (2D-TMDs) are theoretically designed. On the basis of the constructed structures, density functional theory (DFT) method is employed to investigate the structural and optoelectronic related properties of these heterojunctions in detail. Specifically, their electronic properties including charge density differences, density of states, and band offsets are calculated, based on which band alignment types as well as their potentials as novel photovoltaic materials are discussed. According to these calculations, we proposed that several van der Waals heterostructures including MoS₂/CdSe, MoTe₂/CdSe, WSe₂/CdSe, MoTe₂/CdSe-ZnS, and WSe₂/CdSe-ZnS might be used as potential photovoltaic materials due to their type II band alignment characteristics. Moreover, the WSe₂/CdSe-ZnS heterostructure is expected to have optimal photovoltaic performance attributed to their large bond offsets and band gaps, which could not only facilitate charge separation processes, but also slow down charge recombination. Our present theoretical work could be helpful for the future experimental design of novel CdSe QDs and 2D-TMD based van der Waals heterostructures with excellent photovoltaic performances.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Carrier-Transport Mechanism in Organic Antiambipolar Transistors Unveiled by Operando Photoemission Electron Microscopy

Organic antiambipolar transistors (AATs) have partially overlapped p-n junctions. At room temperature, this p-n junction induces a negative differential transconductance in an AAT. However, the detailed carrier-transport mechanism remains unclear. Herein, an operando photoemission electron microscopy is used to tackle this issue owing to the technique's ability to visualize conductive electrons in real time during transistor operation. Notably, it is observed that when the AAT is on, a depletion layer forms at the lateral p-n junction. The visualized depletion layer shows that both p- and n-type channels have pinch-off states in the gate voltage range when the AAT is in on state. The steep potential gradient at the lateral p-n interface enhances the electron conduction from n-type to p-type semiconductor. Another significant finding is that most electrons are considered to recombine with the accumulated holes in the p-type semiconductor, affording the reduction of photoemission intensity by ≈80%. This technique provides a thorough understanding of carrier transport in AATs, further improving the device performance.

Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual-Gate Antiambipolar Transistor

Electrically reconfigurable organic logic circuits are promising candidates for realizing new computation architectures, such as artificial intelligence and neuromorphic devices. In this study, multiple logic gate operations are attained based on a dual-gate organic antiambipolar transistor (DG-OAAT). The transistor exhibits a Λ-shaped transfer curve, namely, a negative differential transconductance at room temperature. It is important to note that the peak voltage of the drain current is precisely tuned by three input signals: bottom-gate, top-gate, and drain voltages. This distinctive feature enables multiple logic gate operations with "only a single DG-OAAT," which are not obtainable in conventional transistors. Five logic gate operations, which correspond to AND, OR, NAND, NOR, and XOR, are demonstrated by adjusting the bottom-gate and top-gate voltages. Moreover, varying the drain voltage makes it possible to reversibly switch two logic gates, e.g., NAND/NOR and OR/XOR. In addition, the DG-OAATs show a high degree of stability and reliability. The logic gate operations are observed even months later. The hysteresis in the transfer curves is also negligible. Thus, the device concept is promising for realizing multifunctional logic circuits with a simple transistor configuration. Hence, these findings are expected to surpass the current limitations in complementary metal-oxide-semiconductor devices.

Commensurate Assembly of C60 on Black Phosphorus for Mixed-Dimensional van der Waals Transistors

2D crystals can serve as templates for the realization of new van der Waals (vdW) heterostructures via controlled assembly of low-dimensional functional components. Among available 2D crystals, black phosphorus (BP) is unique due to its puckered atomic surface topography, which may lead to strong epitaxial phenomena through guided vdW assembly. Here, it is demonstrated that a BP template can induce highly oriented assembly of C₆₀ molecular crystals. Transmission electron microscopy and theoretical analysis of the C₆₀ /BP vdW heterostructure clearly confirm that the BP template results in oriented C₆₀ assembly with higher-order commensurism. Lateral and vertical devices with C₆₀ /BP junctions are fabricated via a lithography-free clean process, which allows one to investigate the ideal electrical properties of pristine C₆₀ /BP junctions. Effective tuning of the C₆₀ /BP junction barrier from 0.2 to 0.5 eV and maximum on-current density higher than 10⁴  mA cm^-2 are achieved with graphite/C₆₀ /BP vertical vdW transistors. Due to the formation of high-quality C₆₀ film and the semitransparent graphite top-electrode, the vertical transistors show high photoresponsivities up to ≈100 A W^-1 as well as a fast response time under visible light illumination.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates

Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS₂) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS₂ by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS₂ and chemically treated MoS₂ (c-MoS₂). The energy-band misalignment of MoS₂ and c-MoS₂ results in a sequential activation of the MoS₂ and c-MoS₂ channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.

Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit

Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS₂) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p-n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III-V semiconductors.

Interface-Driven Assembly of Pentacene/MoS2 Lateral Heterostructures

Mixed-dimensional van der Waals heterostructures formed by molecular assemblies and 2D materials provide a novel platform for fundamental nanoscience and future nanoelectronics applications. Here we investigate a prototypical hybrid heterostructure between pentacene molecules and 2D MoS₂ nanocrystals, deposited on Au(111) by combining pulsed laser deposition and organic molecular beam epitaxy. The obtained structures were investigated in situ by scanning tunneling microscopy and spectroscopy and analyzed theoretically by density functional theory calculations. Our results show the formation of atomically thin pentacene/MoS₂ lateral heterostructures on the Au substrate. The most stable pentacene adsorption site corresponds to MoS₂ terminations, where the molecules self-assemble parallel to the direction of MoS₂ edges. The density of states changes sharply across the pentacene/MoS₂ interface, indicating a weak interfacial coupling, which leaves the electronic signature of MoS₂ edge states unaltered. This work unveils the self-organization of abrupt mixed-dimensional lateral heterostructures, opening to hybrid devices based on organic/inorganic one-dimensional junctions.

Quasiparticle electronic structure of phthalocyanine:TMD interfaces from first-principles GW

Interfaces formed between monolayer transition metal dichalcogenides and (metallo)phthalocyanine molecules are promising in energy applications and provide a platform for studying mixed-dimensional molecule-semiconductor heterostructures in general. An accurate characterization of the frontier energy level alignment at these interfaces is key in the fundamental understanding of the charge transfer dynamics between the two photon absorbers. Here, we employ the first-principles substrate screening GW approach to quantitatively characterize the quasiparticle electronic structure of a series of interfaces: metal-free phthalocyanine (H₂Pc) adsorbed on monolayer MX₂ (M = Mo, W; X = S, Se) and zinc phthalocyanine (ZnPc) adsorbed on MoX₂ (X = S, Se). Furthermore, we reveal the dielectric screening effect of the commonly used α-quartz (SiO₂) substrate on the H₂Pc:MoS₂ interface using the dielectric embedding GW approach. Our calculations furnish a systematic set of GW results for these interfaces, providing the structure-property relationship across a series of similar systems and benchmarks for future experimental and theoretical studies.

Reversing the Polarity of MoS2 with PTFE

Pristine monolayer molybdenum disulfide (MoS₂) demonstrates predominant and persistent n-type semiconducting polarity due to the natural sulfur vacancy, which hinders its electronic and optoelectronic applications in the rich bipolarity area of semiconductors. Current doping strategies in single-layer MoS₂ are either too mild to reverse the heavily n-doped polarity or too volatile to create a robust electronic device meeting the requirements of both a long lifetime and compatibility for mass production. Herein, we demonstrate that MoS₂ can be transferred onto polytetrafluoroethylene (PTFE), one of the most electronegative substrates. After transfer, the MoS₂ photoluminescence exhibits an obvious blueshift from 1.83 to 1.89 eV and a prolonged lifetime, from 0.13 to 3.19 ns. The Fermi level of MoS₂ experiences a remarkable 510 meV decrease, transforming its electronic structure into that of a hole-rich p-type semiconductor. Our work reveals a strong p-doping effect and charge transfer between MoS₂ and PTFE, shedding light on a new nonvolatile strategy to fabricate p-type MoS₂ devices.

Angstrom-Scale Spectroscopic Visualization of Interfacial Interactions in an Organic/Borophene Vertical Heterostructure

Two-dimensional boron monolayers (i.e., borophene) hold promise for a variety of energy, catalytic, and nanoelectronic device technologies due to the unique nature of boron-boron bonds. To realize its full potential, borophene needs to be seamlessly interfaced with other materials, thus motivating the atomic-scale characterization of borophene-based heterostructures. Here, we report the vertical integration of borophene with tetraphenyldibenzoperiflanthene (DBP) and measure the angstrom-scale interfacial interactions with ultrahigh-vacuum tip-enhanced Raman spectroscopy (UHV-TERS). In addition to identifying the vibrational signatures of adsorbed DBP, TERS reveals subtle ripples and compressive strains of the borophene lattice underneath the molecular layer. The induced interfacial strain is demonstrated to extend in borophene by ∼1 nm beyond the molecular region by virtue of 5 Å chemical spatial resolution. Molecular manipulation experiments prove the molecular origins of interfacial strain in addition to allowing atomic control of local strain with magnitudes as small as ∼0.6%. In addition to being the first realization of an organic/borophene vertical heterostructure, this study demonstrates that UHV-TERS is a powerful analytical tool to spectroscopically investigate buried and highly localized interfacial characteristics at the atomic scale, which can be applied to additional classes of heterostructured materials.

Charge Transfer Screening and Energy Level Alignment at Complex Organic-Inorganic Interfaces: A Tractable Ab Initio GW Approach

Complex organic-inorganic interfaces are important for device and sensing applications. Charge transfer doping is prevalent in such applications and can affect the interfacial energy level alignments (ELA), which are determined by many-body interactions. We develop an approximate ab initio many-body GW approach that can capture many-body interactions due to interfacial charge transfer. The approach uses significantly less resources than a regular GW calculation but gives excellent agreement with benchmark GW calculations on an F4TCNQ/graphene interface. We find that many-body interactions due to charge transfer screening result in gate-tunable F4TCNQ HOMO-LUMO gaps. We further predict the ELA of a large system of experimental interest-4,4'-bis(dimethylamino)bipyridine (DMAP-OED) on monolayer MoS₂, where charge transfer screening results in an ∼1 eV reduction of the molecular HOMO-LUMO gap. Comparison with a two-dimensional electron gas model reveals the importance of explicitly considering the intraband transitions in determining the charge transfer screening in organic-inorganic interface systems.

Ultrafast Singlet Energy Transfer before Fission in a Tetracene/WSe2 Type II Hybrid Heterostructure

Hybrid heterostructures comprising organic and two-dimensional (2D) layered semiconductors hold great promise for light harvesting and optoelectronic applications. Among them, organic materials that exhibit singlet fission (SF) in which one singlet exciton generates two triplet excitons are particularly attractive and can potentially improve the performance of the device. However, SF-enhanced devices require that SF can compete with direct energy/charge transfer from the singlet exciton. Here, we performed ultrafast spectroscopic studies on a prototypical heterostructure consisting of tetracene (Tc) and monolayer WSe₂. We show a type II band alignment with 16.5 ps hole transfer from photoexcited WSe₂ to tetracene and a long-lived (∼565 ps) charge separation. Importantly, we show ultrafast (∼3.4 ps) singlet exciton energy transfer from photoexcited tetracene to WSe₂, prior to the slow SF process (>20 ps) in tetracene. This study raises the challenge and calls for the careful design of SF-enhanced 2D optoelectronic devices.

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

Two-dimensional (2D) heterostructures have attracted widespread attention for their promising prospects in the fields of electronics and optoelectronics. However, in order to truly realize 2D-material-based integrated circuits, precisely controllable fabrication of 2D heterostructures is crucial and urgently needed. Here, we demonstrate an ex situ growth method of MoSe₂/MoS₂ lateral heterostructures by selective selenization of a laser-scanned, ultrathin oxidized region (MoO_x) on a monolayer MoS₂ matrix. In our method, monolayer MoS₂ is scanned by a laser with a pre-designed pattern, where the laser-scanned MoS₂ is totally oxidized into MoO_x. The oxidized region is then selenized in a furnace, while the unoxidized MoS₂ region remains unchanged, delivering a MoSe₂/MoS₂ heterostructure. Unlike in situ laser direct growth methods, our method separates the laser-scanned process from the selenization process, which avoids the long time of point-by-point selenization of MoS₂ by laser, making the efficiency of the synthesis greatly improved. The formation process of the heterostructure is studied by Raman spectroscopy and Auger electron spectroscopy. This simple and controllable approach to lateral heterostructures with desired patterns paves the way for fast and mass integration of devices based on 2D heterostructures.

Rational design of monolayer transition metal dichalcogenide@fullerene van der Waals photovoltaic heterojunctions with time-domain density functional theory simulations

van der Waals heterojunctions formed by transition metal dichalcogenides (TMDs) and fullerenes are promising candidates for novel photovoltaic devices due to the excellent optoelectronic properties of both TMDs and fullerenes. However, relevant experimental and theoretical investigations remain scarce to the best of our knowledge. Herein, we have first employed static density functional theory (DFT) calculations in combination with time-domain density functional theory (TDDFT) based nonadiabatic dynamics simulations to rationally evaluate the photovoltaic performances of four TMD@fullerene heterostructures, i.e. WSe₂@C₆₀, WSe₂@C₇₀, MoTe₂@C₆₀ and MoTe₂@C₇₀, respectively. Our simulation results indicate that the C₇₀-based heterostructures overall have better photoinduced electron transfer efficiencies than their C₆₀-based counterparts, among which the performance of the WSe₂@C₇₀ heterostructure is the best and the electron transfer from WSe₂ to C₇₀ almost accomplishes within 1 ps. In addition, the large build-in potential of about 0.75 eV of WSe₂@C₇₀ is beneficial for the charge separation processes. Our present work not only selects the van der Waals TMD@fullerene heterojunctions that might have excellent photovoltaic properties, but also paves the way for the rational design of novel heterojunctions with better optoelectronic performances with DFT and TDDFT simulations in the future.

Directly Probing Interfacial Coupling in a Monolayer MoSe2 and CuPc Heterostructure

It is of great importance to develop useful methods to evaluate interfacial coupling strength noninvasively for exploring and optimizing heterointerface functionality. Recently, organic-inorganic van der Waals (vdW) heterostructures (HSs) composed of organic semiconductors and transition-metal dichalcogenides (TMD) have shown great potential for developing next-generation flexible optical, electrical, and optoelectrical devices. Since vdW coupling dominates the property of such a vdW HS, it is crucial to develop a method to evaluate its interfacial coupling strength noninvasively. In this work, by combining electrical force microscopy (EFM) and Raman and photoluminescence spectroscopic measurements, we were able to directly probe the coupling strength between monolayer MoSe₂ and a copper phthalocyanine (CuPc) thin film. Especially, we also found a new Raman mode in HS due to the Davydov splitting of the CuPc thin film via strong interfacial coupling between the two materials. This new Raman mode was thus utilized as a probe to reveal the modulation of the coupling strength by changing post-treatment conditions. All of these results indicate that the method developed here is capable of evaluating the coupling strength of the MoSe₂/CuPc HS effectively and innovatively, which aids in providing deep insights into such hybrid vdW HSs for future optical and optoelectrical applications.

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures

Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (V_D), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (V_BG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative V_D, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at V_D = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different V_D and V_BG regimes.

The capabilities of nanoelectronic 2-D materials for bio-inspired computing and drug delivery indicate their significance in modern drug design

Remarkable advancements in the computational techniques and nanoelectronics have attracted considerable interests for development of highly-sophisticated materials (Ms) including the theranostics with optimal characteristics and innovative delivery systems. Analyzing the huge amounts of multivariate data and solving the newly-emerged complicated problems including the healthcare-related ones have created increasing demands for improving the computational speed and minimizing the consumption of energy. Shifting towards the non-von Neumann approaches enables performing specific computational tasks and optimizing the processing of signals. Besides usefulness for neuromorphic computing and increasing the efficiency of computation energy, 2-D electronic Ms are capable of optical sensing with ultra-fast and ultra-sensitive responses, mimicking the neurons, detection of pathogens or biomolecules, and prediction of the progression of diseases, assessment of the pharmacokinetics/pharmacodynamics of therapeutic candidates, mimicking the dynamics of the release of neurotransmitters or fluxes of ions that might provide a deeper knowledge about the computations and information flow in the brain, and development of more effective treatment protocols with improved outcomes. 2-D Ms appear as the major components of the next-generation electronically-enabled devices for highly-advanced computations, bio-imaging, diagnostics, tissue engineering, and designing smart systems for site-specific delivery of therapeutics that might result in the reduced adverse effects of drugs and improved patient compliance. This manuscript highlights the significance of 2-D Ms in the neuromorphic computing, optimizing the energy efficiency of the multi-step computations, providing novel architectures or multi-functional systems, improved performance of a variety of devices and bio-inspired functionalities, and delivery of theranostics.

Tailoring the Optical Response of Pentacene Thin Films via Templated Growth on Hexagonal Boron Nitride

The optoelectronic properties of organic thin films are strongly dependent on their molecular orientation and packing, which in turn is sensitive to the underlying substrate. Hexagonal boron nitride (hBN) and other van der Waals (vdW) materials are known to template different organic thin film growth modalities from conventional inorganic substrates such as SiO₂. Here, the morphology and temperature-dependent optical properties of pentacene films grown on hBN are reported. Pentacene deposited on hBN forms large-grain films with a molecular π-face-on orientation unlike the dendritic edge-on thin-film phase on SiO₂. Pentacene/hBN films exhibit a 40 meV lower free exciton emission than pentacene/SiO₂ and an unconventional emission energy temperature dependence. Time-resolved photoluminescence (PL) decay measurements show a long-lived signal in the π-face-on phase related to delayed emission from triplet-triplet fusion. This work demonstrates that growth on vdW materials provides a pathway for controlling optoelectronic functionality in molecular thin films.

Engineering of TMDC-OSC hybrid interfaces: the thermodynamics of unitary and mixed acene monolayers on MoS2

Hybrid systems of two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) and organic semiconductors (OSCs) have become subject of great interest for future device architectures. Although OSC-TMDC hybrid systems have been used in first device demonstrations, the precise preparation of ultra-thin OSC films on TMDCs has not been addressed. Due to the weak van der Waals interaction between TMDCs and OSCs, this requires precise knowledge of the thermodynamics at hand. Here, we use temperature-programmed desorption (TPD) and Monte Carlo (MC) simulations of TPD traces to characterize the desorption kinetics of pentacene (PEN) and perfluoropentacene (PFP) on MoS₂ as a model system for OSCs on TMDCs. We show that the monolayers of PEN and PFP are thermally stabilized compared to their multilayers, which allows preparation of nominal monolayers by selective desorption of multilayers. This stabilization is, however, caused by entropy due to a high molecular mobility rather than an enhanced molecule-substrate bond. Consequently, the nominal monolayers are not densely packed films. Molecular mobility can be suppressed in mixed monolayers of PEN and PFP that, due to intermolecular attraction, form highly ordered films as shown by scanning tunneling microscopy. Although this reduces the entropic stabilization, the intermolecular attraction further stabilizes mixed films.

2D Materials and Heterostructures at Extreme Pressure

2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.

Functional inks and extrusion-based 3D printing of 2D materials: a review of current research and applications

Graphene and related 2D materials offer an ideal platform for next generation disruptive technologies and in particular the potential to produce printed electronic devices with low cost and high throughput. Interest in the use of 2D materials to create functional inks has exponentially increased in recent years with the development of new ink formulations linked with effective printing techniques, including screen, gravure, inkjet and extrusion-based printing towards low-cost device manufacturing. Exfoliated, solution-processed 2D materials formulated into inks permits additive patterning onto both rigid and conformable substrates for printed device design with high-speed, large-scale and cost-effective manufacturing. Each printing technique has some sort of clear advantages over others that requires characteristic ink formulations according to their individual operational principles. Among them, the extrusion-based 3D printing technique has attracted heightened interest due to its ability to create three-dimensional (3D) architectures with increased surface area facilitating the design of a new generation of 3D devices suitable for a wide variety of applications. There still remain several challenges in the development of 2D material ink technologies for extrusion printing which must be resolved prior to their translation into large-scale device production. This comprehensive review presents the current progress on ink formulations with 2D materials and their broad practical applications for printed energy storage devices and sensors. Finally, an outline of the challenges and outlook for extrusion-based 3D printing inks and their place in the future printed devices ecosystem is presented.

Large-Scale Noncovalent Functionalization of 2D Materials through Thermally Controlled Rotary Langmuir-Schaefer Conversion

As two-dimensional (2D) materials are more broadly utilized as components of hybrid materials, controlling their surface chemistry over large areas through noncovalent functionalization becomes increasingly important. Here, we demonstrate a thermally controlled rotary transfer stage that allows areas of a 2D material to be continuously cycled into contact with a Langmuir film. This approach enables functionalization of large areas of the 2D material and simultaneously improves long-range ordering, achieving ordered domain areas up to nearly 10 000 μm². To highlight the layer-by-layer processing capability of the rotary transfer stage, large-area noncovalently adsorbed monolayer films from an initial rotary cycle were used as templates to assemble ultranarrow gold nanowires from solution. The process we demonstrate would be readily extensible to roll-to-roll processing, addressing a longstanding challenge in scaling Langmuir-Schaefer transfer for practical applications.

Energy Transport of Hybrid Charge-Transfer Excitons

We investigate the energy transport in an organic-inorganic hybrid platform formed between semiconductors that support stable room-temperature excitons. We find that following photoexcitation, fast-moving hot hybrid charge-transfer excitons (HCTEs) are formed in about 36 ps via scattering with optical phonons at the interface between j-aggregates of organic dye and inorganic monolayer MoS₂. Once the energy falls below the optical phonon energy, the excess kinetic energy is relaxed slowly via acoustic phonon scattering, resulting in energy transport that is dominated by fast-moving hot HCTEs that transition into cold HCTEs in about 110 ps. We model the exciton-phonon interactions using Fröhlich and deformation potential theory and attribute the prolonged transport of hot HCTEs to phonon bottleneck. We find that the measured diffusivity of HCTEs in both hot and cold regions of transport was higher than the diffusivity of MoS₂ A exciton and verify these results by conducting the experiments with different excitation energies. This work not only provides significant insight into the initial energy transport of HCTEs at organic-inorganic hybrid interfaces but also contributes to the formulation of a complete physical picture of the energy dynamics in hybrid materials, which are poised to advance applications in energy conversion and optoelectronic devices.

Neuromorphic nanoelectronic materials

Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.

Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.

Emission Control from Transition Metal Dichalcogenide Monolayers by Aggregation-Induced Molecular Rotors

Organic-inorganic (O-I) heterostructures, consisting of atomically thin inorganic semiconductors and organic molecules, present synergistic and enhanced optoelectronic properties with a high tunability. Here, we develop a class of air-stable vertical O-I heterostructures comprising a monolayer of transition-metal dichalcogenides (TMDs), including WS₂, WSe₂, and MoSe₂, on top of tetraphenylethylene (TPE) core-based aggregation-induced emission (AIE) molecular rotors. The created O-I heterostructures yields a photoluminescence (PL) enhancement of up to ∼950%, ∼500%, and ∼330% in the top monolayer WS₂, MoSe₂, and WSe₂ as compared to PL in their pristine monolayers, respectively. The strong PL enhancement is mainly attributed to the efficient photogenerated carrier process in the AIE luminogens (courtesy of their restricted intermolecular motions in the solid state) and the charge-transfer process in the created type I O-I heterostructures. Moreover, we observe an improvement in photovoltaic properties of the TMDs in the heterostructures including the quasi-Fermi level splitting, minority carrier lifetime, and light absorption. This work presents an inspiring example of combining stable, highly luminescent AIE-based molecules, with rich photochemistry and versatile applications, with atomically thin inorganic semiconductors for multifunctional and efficient optoelectronic devices.