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Yang Q, Kang Y, Zhang C, Chen H, Zhang T, Bian Z, Su X, Xu W, Sun J, Wang P, Xu Y, Yu B, Zhao Y. A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403043. [PMID: 38810136 PMCID: PMC11304321 DOI: 10.1002/advs.202403043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 05/17/2024] [Indexed: 05/31/2024]
Abstract
The optoelectronic resistive random-access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in-sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in-sensor color image cryptography. Surface plasmons of noble metals enable the strong light absorption to realize an efficient modulation of filament growth at nanoscale. Resistive switching curves show that the optical stimuli can impede the filament aggregation and promote the filament annihilation, which originates from photothermal effects and photogenerated hot electrons in localized surface plasmon resonance of noble metals. By selecting noble metals, the optoelectronic RRAM array can respond to distinct wavelengths and mimic the biological dichromatic cone cells to perform the color perception. Due to the intrinsic and high-quality randomness, the optoelectronic RRAM can produce a PUF key in every exposure cycle, which can be applied in the reconfigurable cryptography. The findings demonstrate an effective strategy to build optoelectronic RRAM for in-sensor color image cryptography applications.
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Affiliation(s)
- Quan Yang
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Yu Kang
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Cheng Zhang
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Haohan Chen
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Tianjiao Zhang
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Zheng Bian
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Xiangwei Su
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Wei Xu
- Research Center for Frontier Fundamental StudiesZhejiang LabHangzhou311100China
| | - Jiabao Sun
- Micro‐Nano Fabrication CenterZhejiang University38 Zheda RoadHangzhou310027China
| | - Pan Wang
- College of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Yang Xu
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Bin Yu
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
| | - Yuda Zhao
- College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University38 Zheda RoadHangzhou310027China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of EducationJianghan UniversityWuhan430056China
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2
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Guo F, Liu Y, Zhang M, Yu W, Li S, Zhang B, Hu B, Li S, Sun A, Jiang J, Hao L. VO 2/MoO 3 Heterojunctions Artificial Optoelectronic Synapse Devices for Near-Infrared Optical Communication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310767. [PMID: 38456772 DOI: 10.1002/smll.202310767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 02/23/2024] [Indexed: 03/09/2024]
Abstract
Artificial optoelectronic synapses (OES) have attracted extensive attention in brain-inspired information processing and neuromorphic computing. However, OES at near-infrared wavelengths have rarely been reported, seriously limiting the application in modern optical communication. Herein, high-performance near-infrared OES devices based on VO2/MoO3 heterojunctions are presented. The textured MoO3 films are deposited on the sputtered VO2 film by using the glancing-angle deposition technique to form a heterojunction device. Through tuning the oxygen defects in the VO2 film, the fabricated VO2/MoO3 heterojunction exhibits versatile electrical synaptic functions. Benefiting from the highly efficient light harvesting and the unique interface effect, the photonic synaptic characteristics, mainly including the short/long-term plasticity and learning experience behavior are successfully realized at the O (1342 nm) and C (1550 nm) optical communication wavebands. Moreover, a single OES device can output messages accurately by converting light signals of the Morse code to distinct synaptic currents. More importantly, a 3 × 3 artificial OES array is constructed to demonstrate the impressive image perceiving and learning capabilities. This work not only indicates the feasibility of defect and interface engineering in modulating the synaptic plasticity of OES devices, but also provides effective strategies to develop advanced artificial neuromorphic visual systems for next-generation optical communication systems.
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Affiliation(s)
- Fuhai Guo
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Shuangshuang Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Ankai Sun
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Jianyu Jiang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
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3
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Wi S, Jeong M, Lee K, Lee Y. Optoelectronic Synapse Behaviors in Tb 3+ and Al 3+ Co-Doped CaSnO 3 with Long-Persistent Luminescence. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402848. [PMID: 38923300 PMCID: PMC11348126 DOI: 10.1002/advs.202402848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Revised: 05/22/2024] [Indexed: 06/28/2024]
Abstract
Neuromorphic computation draws inspiration from the remarkable features of the human brain including low energy consumption, parallelism, adaptivity, cognitive functions, and learning ability. These qualities hold the promise of unlocking groundbreaking computational techniques that surpass the limitations of traditional computing systems. This paper reports a remarkable photo-synaptic behavior in the field of rare earth ion-doped luminescent oxides by using long-persistent luminescence (LPL). This system utilizes electron trap states to regulate the synaptic behavior, operating through a fundamentally different mechanism from that of electronic-based synaptic devices. To realize this strategy, Tb3+ doped CaSnO3, which shows a significant LPL property under UV-light excitation, is prepared. The luminescent system shows key neuromorphic characteristics such as paired-pulse facilitation, pulse-number/timing dependent potentiation, and pulse-number/timing dependent short- to long-term plasticity transition, which are required for realizing synaptic devices. This feature expands the way for advanced neuromorphic technologies employing light stimuli.
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Affiliation(s)
- Sangwon Wi
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
| | - Minjae Jeong
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
| | - Kwanchul Lee
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
| | - Yunsang Lee
- Department of Physics and Integrative Institute of Basic SciencesSoongsil UniversitySeoul06978Republic of Korea
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4
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Kumar D, Li H, Kumbhar DD, Rajbhar MK, Das UK, Syed AM, Melinte G, El-Atab N. Highly Efficient Back-End-of-Line Compatible Flexible Si-Based Optical Memristive Crossbar Array for Edge Neuromorphic Physiological Signal Processing and Bionic Machine Vision. NANO-MICRO LETTERS 2024; 16:238. [PMID: 38976105 PMCID: PMC11231128 DOI: 10.1007/s40820-024-01456-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Accepted: 06/11/2024] [Indexed: 07/09/2024]
Abstract
The emergence of the Internet-of-Things is anticipated to create a vast market for what are known as smart edge devices, opening numerous opportunities across countless domains, including personalized healthcare and advanced robotics. Leveraging 3D integration, edge devices can achieve unprecedented miniaturization while simultaneously boosting processing power and minimizing energy consumption. Here, we demonstrate a back-end-of-line compatible optoelectronic synapse with a transfer learning method on health care applications, including electroencephalogram (EEG)-based seizure prediction, electromyography (EMG)-based gesture recognition, and electrocardiogram (ECG)-based arrhythmia detection. With experiments on three biomedical datasets, we observe the classification accuracy improvement for the pretrained model with 2.93% on EEG, 4.90% on ECG, and 7.92% on EMG, respectively. The optical programming property of the device enables an ultra-low power (2.8 × 10-13 J) fine-tuning process and offers solutions for patient-specific issues in edge computing scenarios. Moreover, the device exhibits impressive light-sensitive characteristics that enable a range of light-triggered synaptic functions, making it promising for neuromorphic vision application. To display the benefits of these intricate synaptic properties, a 5 × 5 optoelectronic synapse array is developed, effectively simulating human visual perception and memory functions. The proposed flexible optoelectronic synapse holds immense potential for advancing the fields of neuromorphic physiological signal processing and artificial visual systems in wearable applications.
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Affiliation(s)
- Dayanand Kumar
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Hanrui Li
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Dhananjay D Kumbhar
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Manoj Kumar Rajbhar
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Uttam Kumar Das
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Abdul Momin Syed
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Georgian Melinte
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia
| | - Nazek El-Atab
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia.
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5
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Ju D, Lee J, Kim S, Cho S. Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing. J Chem Phys 2024; 161:014709. [PMID: 38953444 DOI: 10.1063/5.0218677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2024] [Accepted: 06/13/2024] [Indexed: 07/04/2024] Open
Abstract
Conductive-bridge random access memory can be used as a physical reservoir for temporal learning in reservoir computing owing to its volatile nature. Herein, a scaled Cu/HfOx/n+-Si memristor was fabricated and characterized for reservoir computing. The scaled, silicon nanofin bottom electrode formation is verified by scanning electron and transmission electron microscopy. The scaled device shows better cycle-to-cycle switching variability characteristics compared with those of large-sized cells. In addition, synaptic characteristics such as conductance changes due to pulses, paired-pulse facilitation, and excitatory postsynaptic currents are confirmed in the scaled memristor. High-pattern accuracy is demonstrated by deep neural networks applied in neuromorphic systems in conjunction with the use of the Modified National Institute of Standards and Technology database. Furthermore, a reservoir computing system is introduced with six different states attained by adjusting the amplitude of the input pulse. Finally, high-performance and efficient volatile reservoir computing in the scaled device is demonstrated by conductance control and system-level reservoir computing simulations.
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Affiliation(s)
- Dongyeol Ju
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Jungwoo Lee
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Seongjae Cho
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
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6
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Gao Z, Jiang R, Deng M, Zhao C, Hong Z, Shang L, Li Y, Zhu L, Zhang J, Zhang J, Hu Z. Tunable Negative and Positive Photoconductance in Van Der Waals Heterostructure for Image Preprocessing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401585. [PMID: 38696723 DOI: 10.1002/adma.202401585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 04/15/2024] [Indexed: 05/04/2024]
Abstract
The processing of visual information occurs mainly in the retina, and the retinal preprocessing function greatly improves the transmission quality and efficiency of visual information. The artificial retina system provides a promising path to efficient image processing. Here, graphene/InSe/h-BN heterogeneous structure is proposed, which exhibits negative and positive photoconductance (NPC and PPC) effects by altering the strength of a single wavelength laser. Moreover, a modified theoretical model is presented based on the power-dependent photoconductivity effect of laser:I ph = - mP α 1 + nP α 2 ${\rm I}_{\rm ph}\,=\,-{\rm mP}^{\alpha _{1}} + {\rm nP}^{\alpha _{2}}$ , which can reveal the internal physical mechanism of negative/positive photoconductance effects. The present 2D structure design allows the field effect transistor (FET) to exhibit excellent photoelectric performance (RNPC = 1.1× 104 AW-1, RPPC = 13 AW-1) and performance stability. Especially, the retinal pretreatment process is successfully simulated based on the negative and positive photoconductive effects. Moreover, the pulse signal input improves the device responsivity by 167%, and the transmission quality and efficiency of the visual signal can also be enhanced. This work provides a new design idea and direction for the construction of artificial vision, and lay a foundation for the integration of the next generation of optoelectronic devices.
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Affiliation(s)
- Zhaotan Gao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Ruiqi Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Can Zhao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Zian Hong
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Jian Zhang
- School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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7
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Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
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Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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8
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Kang S, Sohn S, Kim H, Yun HJ, Jang BC, Yoo H. Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11758-11766. [PMID: 38391255 DOI: 10.1021/acsami.3c17855] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Phototransistors have gained significant attention in diverse applications such as photodetectors, image sensors, and neuromorphic devices due to their ability to control electrical characteristics through photoresponse. The choice of photoactive materials in phototransistor research significantly impacts its development. In this study, we propose a novel device that emulates artificial synaptic behavior by leveraging the off-current of a phototransistor. We utilize a p-type organic semiconductor, dinaphtho[2,3-b:2',3'- f]thieno[3,2-b]thiophene (DNTT), as the channel material and dope it with the organic semiconductor 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) on the DNTT transistor. Under light illumination, the general DNTT transistor shows no change in off-current, except at 400 nm wavelength, whereas the TPBi-doped DNTT phototransistor exhibits increased off-current across all wavelength bands. Notably, DNTT phototransistors demonstrate broad photoresponse characteristics in the wavelength range of 400-1000 nm. We successfully simulate artificial synaptic behavior by differentiating the level of off-current and achieving a recognition rate of over 70% across all wavelength bands.
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Affiliation(s)
- Seungme Kang
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sunyoung Sohn
- Department of Semiconductor Energy Engineering, Sangji University, Wonju 26339, Republic of Korea
| | - Hyeran Kim
- Research Center for Materials Analysis, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Hyung Joong Yun
- Advance Nano Research Group, Korea Basic Science Institute (KBSI), Daejeon 34126, Republic of Korea
| | - Byung Chul Jang
- School of Electronics and Electrical Engineering, Kyungpook National University, Bukgu 41566, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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9
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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10
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Sun H, Wang H, Dong S, Dai S, Li X, Zhang X, Deng L, Liu K, Liu F, Tan H, Xue K, Peng C, Wang J, Li Y, Yu A, Zhu H, Zhan Y. Optoelectronic synapses based on a triple cation perovskite and Al/MoO 3 interface for neuromorphic information processing. NANOSCALE ADVANCES 2024; 6:559-569. [PMID: 38235083 PMCID: PMC10790979 DOI: 10.1039/d3na00677h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Accepted: 12/06/2023] [Indexed: 01/19/2024]
Abstract
Optoelectronic synaptic transistors are attractive for applications in next-generation brain-like computation systems, especially for their visible-light operation and in-sensor computing capabilities. However, from a material perspective, it is difficult to build a device that meets expectations in terms of both its functions and power consumption, prompting the call for greater innovation in materials and device construction. In this study, we innovatively combined a novel perovskite carrier supply layer with an Al/MoO3 interface carrier regulatory layer to fabricate optoelectronic synaptic devices, namely Al/MoO3/CsFAMA/ITO transistors. The device could mimic a variety of biological synaptic functions and required ultralow-power consumption during operation with an ultrafast speed of >0.1 μs under an optical stimulus of about 3 fJ, which is equivalent to biological synapses. Moreover, Pavlovian conditioning and visual perception tasks could be implemented using the spike-number-dependent plasticity (SNDP) and spike-rate-dependent plasticity (SRDP). This study suggests that the proposed CsFAMA synapse with an Al/MoO3 interface has the potential for ultralow-power neuromorphic information processing.
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Affiliation(s)
- Haoliang Sun
- Peng Cheng Laboratory Shenzhen 518055 China
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Haoliang Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | | | - Shijie Dai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Xiaoguo Li
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Xin Zhang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Liangliang Deng
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Kai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Fengcai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Hua Tan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Kun Xue
- Peng Cheng Laboratory Shenzhen 518055 China
| | - Chao Peng
- Peng Cheng Laboratory Shenzhen 518055 China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronics and Frontiers Science Center for Nano-optoelectronics, Peking University Beijing 100080 China
| | - Jiao Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Yi Li
- Peng Cheng Laboratory Shenzhen 518055 China
- Shanghai Engineering Research Center for Broadband Technologies and Applications Shanghai 200436 China
| | - Anran Yu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Hongyi Zhu
- Peng Cheng Laboratory Shenzhen 518055 China
- Shanghai Engineering Research Center for Broadband Technologies and Applications Shanghai 200436 China
| | - Yiqiang Zhan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
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11
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Yang J, Hu L, Shen L, Wang J, Cheng P, Lu H, Zhuge F, Ye Z. Optically driven intelligent computing with ZnO memristor. FUNDAMENTAL RESEARCH 2024; 4:158-166. [PMID: 38933832 PMCID: PMC11197590 DOI: 10.1016/j.fmre.2022.06.019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/13/2022] [Accepted: 06/22/2022] [Indexed: 10/16/2022] Open
Abstract
Artificial vision is crucial for most artificial intelligence applications. Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors, memories, and processors, which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy. Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory (ISCM) are key candidates for solving such challenges and therefore attract increasing attention. At present, the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices. Here, we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere. This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation, owing to its ability to reversibly tune the memconductance with light. Moreover, the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism. Hence, this study is an important step towards the next generation of artificial visual systems.
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Affiliation(s)
- Jing Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Lingxiang Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100029, China
| | - Liufeng Shen
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jingrui Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Peihong Cheng
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Huanming Lu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100029, China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200072, China
- Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Zhizhen Ye
- Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
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12
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Huang PY, Jiang BY, Chen HJ, Xu JY, Wang K, Zhu CY, Hu XY, Li D, Zhen L, Zhou FC, Qin JK, Xu CY. Neuro-inspired optical sensor array for high-accuracy static image recognition and dynamic trace extraction. Nat Commun 2023; 14:6736. [PMID: 37872169 PMCID: PMC10593955 DOI: 10.1038/s41467-023-42488-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 10/12/2023] [Indexed: 10/25/2023] Open
Abstract
Neuro-inspired vision systems hold great promise to address the growing demands of mass data processing for edge computing, a distributed framework that brings computation and data storage closer to the sources of data. In addition to the capability of static image sensing and processing, the hardware implementation of a neuro-inspired vision system also requires the fulfilment of detecting and recognizing moving targets. Here, we demonstrated a neuro-inspired optical sensor based on two-dimensional NbS2/MoS2 hybrid films, which featured remarkable photo-induced conductance plasticity and low electrical energy consumption. A neuro-inspired optical sensor array with 10 × 10 NbS2/MoS2 phototransistors enabled highly integrated functions of sensing, memory, and contrast enhancement capabilities for static images, which benefits convolutional neural network (CNN) with a high image recognition accuracy. More importantly, in-sensor trajectory registration of moving light spots was experimentally implemented such that the post-processing could yield a high restoration accuracy. Our neuro-inspired optical sensor array could provide a fascinating platform for the implementation of high-performance artificial vision systems.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Bi-Yi Jiang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Hong-Ji Chen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Jia-Yi Xu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kang Wang
- Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Xin-Yan Hu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Dong Li
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Fei-Chi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China.
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13
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Wang X, Yang S, Qin Z, Hu B, Bu L, Lu G. Enhanced Multiwavelength Response of Flexible Synaptic Transistors for Human Sunburned Skin Simulation and Neuromorphic Computation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303699. [PMID: 37358823 DOI: 10.1002/adma.202303699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 06/22/2023] [Indexed: 06/27/2023]
Abstract
In biological species, optogenetics and bioimaging work together to regulate the function of neurons. Similarly, the light-controlled artificial synaptic system not only enhances computational speed but also simulates complex synaptic functions. However, reported synaptic properties are mainly limited to mimicking simple biological functions and single-wavelength responses. Therefore, the development of flexible synaptic devices with multiwavelength optical signal response and multifunctional simulation remains a challenge. Here, flexible organic light-stimulated synaptic transistors (LSSTs) enabled by alumina oxide (AlOX ), with a simple fabrication process, are reported. By embedding AlOX nanoparticles, the excitons separation efficiency is improved, allowing for multiple wavelength responses. Optimized LSSTs can respond to multiple optical and electrical signals in a highly synaptic manner. Multiwavelength optical synaptic plasticity, electrical synaptic plasticity, sunburned skin simulation, learning efficiency model controlled by photoelectric cooperative stimulation, neural network computing, "deer" picture learning and memory functions are successfully proposed, which promote the development for future artificial intelligent systems. Furthermore, as prepared flexible transistors exhibit mechanical flexibility with bending radius down to 2.5 mm and improved photosynaptic plasticity, which facilitating development of neuromorphic computing and multifunction integration systems at the device-level.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Shuting Yang
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
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14
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Vats G, Hodges B, Ferguson AJ, Wheeler LM, Blackburn JL. Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205459. [PMID: 36120918 DOI: 10.1002/adma.202205459] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Revised: 08/20/2022] [Indexed: 06/15/2023]
Abstract
Metal halide perovskite based materials have emerged over the past few decades as remarkable solution-processable optoelectronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier-diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality is reviewed.
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Affiliation(s)
- Gaurav Vats
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
- Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200D, Leuven, B-3001, Belgium
| | - Brett Hodges
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | | | - Lance M Wheeler
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
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15
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Yang G, Kim Y, Jeon J, Lee M, Kim D, Kim S, Eom K, Lee H. Reversible Photomodulation of Two-Dimensional Electron Gas in LaAlO 3/SrTiO 3 Heterostructures. NANO LETTERS 2023. [PMID: 37418557 DOI: 10.1021/acs.nanolett.3c01076] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Long-lived photoinduced conductance changes in LaAlO3/SrTiO3 (LAO/STO) heterostructures enable their use in optoelectronic memory applications. However, it remains challenging to quench the persistent photoconductivity (PPC) instantly and reproducibly, which limits the reversible optoelectronic switching. Herein, we demonstrate a reversible photomodulation of two-dimensional electron gas (2DEG) in LAO/STO heterostructures with high reproducibility. By irradiating UV pulses, the 2DEG at the LAO/STO interface is gradually transformed to the PPC state. Notably, the PPC can be completely removed by water treatment when two key requirements are met: (1) the moderate oxygen deficiency in STO and (2) the minimal band edge fluctuation at the interface. Through our X-ray photoelectron spectroscopy and electrical noise analysis, we reveal that the reproducible change in the conductivity of 2DEG is directly attributed to the surface-driven electron relaxation in the STO. Our results provide a stepping-stone toward developing optically tunable memristive devices based on oxide 2DEG systems.
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Affiliation(s)
- Gyeongmo Yang
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Youngmin Kim
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jaeyoung Jeon
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Minkyung Lee
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Doyeop Kim
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Kitae Eom
- School of Advanced Materials science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyungwoo Lee
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
- Department of Physics, Ajou University, Suwon 16499, Republic of Korea
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16
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Dong X, Wei W, Sun H, Li S, Chen J, Chen J, Zhang X, Zhao Y, Li Y. Neotype kuramite optoelectronic memristor for bio-synaptic plasticity simulations. J Chem Phys 2023; 158:2889009. [PMID: 37154283 DOI: 10.1063/5.0151205] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 04/12/2023] [Indexed: 05/10/2023] Open
Abstract
Memristive devices with both electrically and optically induced synaptic dynamic behaviors will be crucial to the accomplishment of brain-inspired neuromorphic computing systems, in which the resistive materials and device architectures are two of the most important cornerstones, but still under challenge. Herein, kuramite Cu3SnS4 is newly introduced into poly-methacrylate as the switching medium to construct memristive devices, and the expected high-performance bio-mimicry of diverse optoelectronic synaptic plasticity is demonstrated. In addition to the excellent basic performances, such as stable bipolar resistive switching with On/Off ratio of ∼486, Set/Reset voltage of ∼-0.88/+0.96 V, and good retention feature of up to 104 s, the new designs of memristors possess not only the multi-level controllable resistive-switching memory property but also the capability of mimicking optoelectronic synaptic plasticity, including electrically and visible/near-infrared light-induced excitatory postsynaptic currents, short-/long-term memory, spike-timing-dependent plasticity, long-term plasticity/depression, short-term plasticity, paired-pulse facilitation, and "learning-forgetting-learning" behavior as well. Predictably, as a new class of switching medium material, such proposed kuramite-based artificial optoelectronic synaptic device has great potential to be applied to construct neuromorphic architectures in simulating human brain functions.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Wenbin Wei
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Siyuan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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17
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Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
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Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
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18
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Chen PX, Panda D, Tseng TY. All oxide based flexible multi-folded invisible synapse as vision photo-receptor. Sci Rep 2023; 13:1454. [PMID: 36702838 PMCID: PMC9880003 DOI: 10.1038/s41598-023-28505-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Accepted: 01/19/2023] [Indexed: 01/27/2023] Open
Abstract
All oxide-based transparent flexible memristor is prioritized for the potential application in artificially simulated biological optoelectronic synaptic devices. SnOx memristor with HfOx layer is found to enable a significant effect on synaptic properties. The memristor exhibits good reliability with long retention, 104 s, and high endurance, 104 cycles. The optimized 6 nm thick HfOx layer in SnOx-based memristor possesses the excellent synaptic properties of stable 350 epochs training, multi-level conductance (MLC) behaviour, and the nonlinearity of 1.53 and 1.46 for long-term potentiation and depression, respectively, and faster image recognition accuracy of 100% after 23 iterations. The maximum weight changes of -73.12 and 79.91% for the potentiation and depression of the synaptic device, respectively, are observed from the spike-timing-dependent plasticity (STDP) characteristics making it suitable for biological applications. The flexibility of the device on the PEN substrate is confirmed by the acceptable change of nonlinearities up to 4 mm bending. Such a synaptic device is expected to be used as a vision photo-receptor.
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Affiliation(s)
- Ping-Xing Chen
- Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Debashis Panda
- Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
- Department of Electronics and Communication Engineering, CV Raman Global University, Bhubaneswar, 752054, India.
| | - Tseung-Yuen Tseng
- Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan
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19
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Zhao J, Zheng S, Zhou L, Mi W, Ding Y, Wang M. An artificial optoelectronic synapse based on MoO xfilm. NANOTECHNOLOGY 2023; 34:145201. [PMID: 36630707 DOI: 10.1088/1361-6528/acb217] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2022] [Accepted: 01/11/2023] [Indexed: 06/17/2023]
Abstract
Artificial optoelectronic synapses have the advantages of large bandwidth, low power consumption and low crosstalk, and are considered to be the basic building blocks of neuromorphic computing. In this paper, a two-terminal optoelectronic synaptic device with ITO-MoOx-Pt structure is prepared by magnetron sputtering. The performance of resistive switching (RS) and the photo plastic properties of the device are analyzed and demonstrated. Electrical characterization tests show that the device has a resistive HRS/LRS ratio of about 90, stable endurance, and retention characteristics of more than 104s (85 °C). The physical mechanism of the device is elucidated by a conducting filament composed of oxygen vacancies. Furthermore, the function of various synaptic neural morphologies is successfully mimicked using UV light as the stimulation source. Including short-term/long-term memory, paired-pulse facilitation, the transition from short-term to long-term memory, and 'learning-experience' behavior. Integrated optical sensing and electronic data storage devices have great potential for future artificial intelligence, which will facilitate the rapid development of retina-like visual sensors and low-power neuromorphic systems.
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Affiliation(s)
- Jinshi Zhao
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391 Bin Shui Xi Dao Road, Xi qing District, Tianjin, 300384, People's Republic of China
| | - ShuTong Zheng
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391 Bin Shui Xi Dao Road, Xi qing District, Tianjin, 300384, People's Republic of China
| | - Liwei Zhou
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391 Bin Shui Xi Dao Road, Xi qing District, Tianjin, 300384, People's Republic of China
| | - Wei Mi
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391 Bin Shui Xi Dao Road, Xi qing District, Tianjin, 300384, People's Republic of China
| | - Yue Ding
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391 Bin Shui Xi Dao Road, Xi qing District, Tianjin, 300384, People's Republic of China
| | - Meng Wang
- Innetech Electronics CO. Ltd, Building B, No. 4, Tianzhi Industrial Park, No. 12, Hongyuan Road, Xiqing Economic Development Zone, Tianjin, People's Republic of China
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20
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Ha H, Pyo J, Lee Y, Kim S. Non-Volatile Memory and Synaptic Characteristics of TiN/CeO x/Pt RRAM Devices. MATERIALS (BASEL, SWITZERLAND) 2022; 15:9087. [PMID: 36556891 PMCID: PMC9786700 DOI: 10.3390/ma15249087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2022] [Revised: 12/13/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
In this study, we investigate the synaptic characteristics and the non-volatile memory characteristics of TiN/CeOx/Pt RRAM devices for a neuromorphic system. The thickness and chemical properties of the CeOx are confirmed through TEM, EDS, and XPS analysis. A lot of oxygen vacancies (ions) in CeOx film enhance resistive switching. The stable bipolar resistive switching characteristics, endurance cycling (>100 cycles), and non-volatile properties in the retention test (>10,000 s) are assessed through DC sweep. The filamentary switching model and Schottky emission-based conduction model are presented for TiN/CeOx/Pt RRAM devices in the LRS and HRS. The compliance current (1~5 mA) and reset stop voltage (−1.3~−2.2 V) are used in the set and reset processes, respectively, to implement multi-level cell (MLC) in DC sweep mode. Based on neural activity, a neuromorphic system is performed by electrical stimulation. Accordingly, the pulse responses achieve longer endurance cycling (>10,000 cycles), MLC (potentiation and depression), spike-timing dependent plasticity (STDP), and excitatory postsynaptic current (EPSC) to mimic synapse using TiN/CeOx/Pt RRAM devices.
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Affiliation(s)
| | | | | | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
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21
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Wu F, Chou CH, Tseng TY. CMOS-Compatible Memristor for Optoelectronic Neuromorphic Computing. NANOSCALE RESEARCH LETTERS 2022; 17:105. [PMID: 36342556 PMCID: PMC9640510 DOI: 10.1186/s11671-022-03744-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/14/2022] [Accepted: 11/02/2022] [Indexed: 06/16/2023]
Abstract
Optoelectronic memristor is a promising candidate for future light-controllable high-density storage and neuromorphic computing. In this work, light-tunable resistive switching (RS) characteristics are demonstrated in the CMOS process-compatible ITO/HfO2/TiO2/ITO optoelectronic memristor. The device shows an average of 79.24% transmittance under visible light. After electroforming, stable bipolar analog switching, data retention beyond 104 s, and endurance of 106 cycles are realized. An obvious current increase is observed under 405 nm wavelength light irradiation both in high and in low resistance states. The long-term potentiation of synaptic property can be achieved by both electrical and optical stimulation. Moreover, based on the optical potentiation and electrical depression of conductances, the simulated Hopfield neural network (HNN) is trained for learning the 10 × 10 pixels size image. The HNN can be successfully trained to recognize the input image with a training accuracy of 100% in 13 iterations. These results suggest that this optoelectronic memristor has a high potential for neuromorphic application.
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Affiliation(s)
- Facai Wu
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chien-Hung Chou
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Tseung-Yuen Tseng
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
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22
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Shen J, Cheng Z, Zhou P. Optical and optoelectronic neuromorphic devices based on emerging memory technologies. NANOTECHNOLOGY 2022; 33:372001. [PMID: 35605580 DOI: 10.1088/1361-6528/ac723f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Accepted: 05/23/2022] [Indexed: 06/15/2023]
Abstract
As artificial intelligence continues its rapid development, inevitable challenges arise for the mainstream computing hardware to process voluminous data (Big data). The conventional computer system based on von Neumann architecture with separated processor unit and memory is approaching the limit of computational speed and energy efficiency. Thus, novel computing architectures such as in-memory computing and neuromorphic computing based on emerging memory technologies have been proposed. In recent years, light is incorporated into computational devices, beyond the data transmission in traditional optical communications, due to its innate superiority in speed, bandwidth, energy efficiency, etc. Thereinto, photo-assisted and photoelectrical synapses are developed for neuromorphic computing. Additionally, both the storage and readout processes can be implemented in optical domain in some emerging photonic devices to leverage unique properties of photonics. In this review, we introduce typical photonic neuromorphic devices rooted from emerging memory technologies together with corresponding operational mechanisms. In the end, the advantages and limitations of these devices originated from different modulation means are listed and discussed.
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Affiliation(s)
- Jiabin Shen
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Zengguang Cheng
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Peng Zhou
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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23
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Zhong Z, Jiang Z, Huang J, Gao F, Hu W, Zhang Y, Chen X. 'Stateful' threshold switching for neuromorphic learning. NANOSCALE 2022; 14:5010-5021. [PMID: 35285836 DOI: 10.1039/d1nr05502j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Memristors have promising prospects in developing neuromorphic chips that parallel the brain-level power efficiency and brain-like computational functions. However, the limited available ON/OFF states and high switching voltage in conventional resistive switching (RS) constrain its practical and flexible implementations to emulate biological synaptic functions with low power consumption. We present 'stateful' threshold switching (TS) within the millivoltage range depending on the resistive states of RS, which originates from the charging/discharging parasitic elements of a memristive circuit. Fundamental neuromorphic learning can be facilely implemented based on a single memristor by utilizing four resistive states in 'stateful' TS. Besides the metaplasticity of synaptic learning-forgetting behaviors, multifunctional associative learning, involving acquisition, extinction, recovery, generalization and protective inhibition, was realized with nonpolar operation and power consumption of 5.71 pW. The featured 'stateful' TS with flexible tunability, enriched states, and ultralow operating voltage will provide new directions toward a massive storage unit and bio-inspired neuromorphic system.
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Affiliation(s)
- Zhijian Zhong
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Zhiguo Jiang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Jianning Huang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Fangliang Gao
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Wei Hu
- Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, PR China
| | - Yong Zhang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Xinman Chen
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
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Shan X, Zhao C, Wang X, Wang Z, Fu S, Lin Y, Zeng T, Zhao X, Xu H, Zhang X, Liu Y. Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104632. [PMID: 34967152 PMCID: PMC8867191 DOI: 10.1002/advs.202104632] [Citation(s) in RCA: 39] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2021] [Revised: 11/15/2021] [Indexed: 05/19/2023]
Abstract
Exploration of optoelectronic memristors with the capability to combine sensing and processing functions is required to promote development of efficient neuromorphic vision. In this work, the authors develop a plasmonic optoelectronic memristor that relies on the effects of localized surface plasmon resonance (LSPR) and optical excitation in an Ag-TiO2 nanocomposite film. Fully light-induced synaptic plasticity (e.g., potentiation and depression) under visible and ultraviolet light stimulations is demonstrated, which enables the functional combination of visual sensing and low-level image pre-processing (including contrast enhancement and noise reduction) in a single device. Furthermore, the light-gated and electrically-driven synaptic plasticity can be performed in the same device, in which the spike-timing-dependent plasticity (STDP) learning functions can be reversibly modulated by visible and ultraviolet light illuminations. Thereby, the high-level image processing function, i.e., image recognition, can also be performed in this memristor, whose recognition rate and accuracy are obviously enhanced as a result of image pre-processing and light-gated STDP enhancement. Experimental analysis shows that the memristive switching mechanism under optical stimulation can be attributed to the oxidation/reduction of Ag nanoparticles due to the effects of LSPR and optical excitation. The authors' work proposes a new type of plasmonic optoelectronic memristor with fully light-modulated capability that may promote the future development of efficient neuromorphic vision.
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Affiliation(s)
- Xuanyu Shan
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Chenyi Zhao
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Xinnong Wang
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Zhongqiang Wang
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Shencheng Fu
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Ya Lin
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Tao Zeng
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Xiaoning Zhao
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Haiyang Xu
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Xintong Zhang
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials ResearchKey Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University)Ministry of Education5268 Renmin StreetChangchun130024China
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25
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Wang F, Ding Q, Bai Y, Bai H, Wang S, Fan W. Fabrication of an amorphous metal oxide/p-BiVO4 photocathode: understanding the role of entropy for reducing nitrate to ammonia. Inorg Chem Front 2022. [DOI: 10.1039/d1qi01472b] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
Entropy regulation makes an amorphous metal oxide/p-BiVO4 heterostructure a desirable catalyst for the NO3− reduction reaction in a photoelectrochemical system.
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Affiliation(s)
- Fengfeng Wang
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Qijia Ding
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Yajie Bai
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Hongye Bai
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Song Wang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, 441053, PR China
| | - Weiqiang Fan
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
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26
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Bian H, Goh YY, Liu Y, Ling H, Xie L, Liu X. Stimuli-Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006469. [PMID: 33837601 DOI: 10.1002/adma.202006469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
Neuromorphic computing holds promise for building next-generation intelligent systems in a more energy-efficient way than the conventional von Neumann computing architecture. Memristive hardware, which mimics biological neurons and synapses, offers high-speed operation and low power consumption, enabling energy- and area-efficient, brain-inspired computing. Here, recent advances in memristive materials and strategies that emulate synaptic functions for neuromorphic computing are highlighted. The working principles and characteristics of biological neurons and synapses, which can be mimicked by memristive devices, are presented. Besides device structures and operation with different external stimuli such as electric, magnetic, and optical fields, how memristive materials with a rich variety of underlying physical mechanisms can allow fast, reliable, and low-power neuromorphic applications is also discussed. Finally, device requirements are examined and a perspective on challenges in developing memristive materials for device engineering and computing science is given.
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Affiliation(s)
- Hongyu Bian
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Yi Yiing Goh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Yuxia Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
| | - Haifeng Ling
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Linghai Xie
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
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27
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Abnavi A, Ahmadi R, Hasani A, Fawzy M, Mohammadzadeh MR, De Silva T, Yu N, Adachi MM. Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45843-45853. [PMID: 34542262 DOI: 10.1021/acsami.1c11359] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for high-integration-density applications such as data storage due to their small vertical dimension and high data storage capability. Here, we report a memristor based on free-standing multilayer molybdenum disulfide (MoS2) with a high current on/off ratio of ∼103 and a stable retention for at least 3000 s. Through light modulation of the carrier density in the suspended MoS2 channel, the on/off ratio can be further increased to ∼105. Moreover, the essential photosynaptic functions with short- and long-term memory (STM and LTM) behaviors are successfully mimicked by such devices. These results also indicate that STM can be transferred to LTM by increasing the light stimuli power, pulse duration, and number of pulses. The electrical measurements performed under vacuum and ambient air conditions propose that the observed resistive switching is due to adsorbed oxygen and water molecules on both sides of the MoS2 channel. Thus, our free-standing 2D multilayer MoS2-based memristors propose a simple approach for fabrication of a low-power-consumption and reliable resistive switching device for neuromorphic applications.
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Affiliation(s)
- Amin Abnavi
- School of Engineering Science, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Ribwar Ahmadi
- School of Engineering Science, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Amirhossein Hasani
- School of Engineering Science, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Mirette Fawzy
- Department of Physics, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | | | - Thushani De Silva
- School of Engineering Science, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Niannian Yu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Michael M Adachi
- School of Engineering Science, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
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28
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Liu L, Cheng Z, Jiang B, Liu Y, Zhang Y, Yang F, Wang J, Yu XF, Chu PK, Ye C. Optoelectronic Artificial Synapses Based on Two-Dimensional Transitional-Metal Trichalcogenide. ACS APPLIED MATERIALS & INTERFACES 2021; 13:30797-30805. [PMID: 34169714 DOI: 10.1021/acsami.1c03202] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The memristor is a foundational device for an artificial synapse, which is essential to realize next-generation neuromorphic computing. Herein, an optoelectronic memristor based on a two-dimensional (2D) transitional-metal trichalcogenide (TMTC) is designed and demonstrated. Owing to the excellent optical and electrical characteristics of titanium trisulfide (TiS3), the memristor exhibits stable bipolar resistance switching (RS) as a result of the controllable formation and rupturing of the conductive aluminum filaments. Multilevel storage is realized with light of multiple wavelengths between 400 and 808 nm, and the synaptic properties such as conduction modulation and spiking timing-dependent plasticity (STDP) are achieved. On the basis of the photonic potentiation and electrical habitual ability, Pavlovian-associative learning is successfully established on this TiS3-based artificial synapse. All these results reveal the large potential of 2D TMTCs in artificial neuromorphic chips.
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Affiliation(s)
- Lei Liu
- Faculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Ziqiang Cheng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
- Department of Applied Physics, East China Jiaotong University, Nanchang 330013, P.R. China
| | - Bei Jiang
- Faculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. China
| | - Yanxin Liu
- Faculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Yanli Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Fan Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, P.R. China
| | - Cong Ye
- Faculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. China
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29
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Krishnan K, Tauquir SM, Vijayaraghavan S, Mohan R. Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement. RSC Adv 2021; 11:23400-23408. [PMID: 35479807 PMCID: PMC9036540 DOI: 10.1039/d1ra03561d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 06/25/2021] [Indexed: 12/21/2022] Open
Abstract
The difference in resistive switching characteristics by modifying the device configuration provides a unique operating principle, which is essential for both fundamental studies and the development of future memory devices. Here, we demonstrate the poly(methyl methacrylate) (PMMA)-based resistive switching characteristics using four different combinations of electrode/electrolyte arrangement in the device geometry. From the current-voltage (I-V) measurements, all the PMMA-based devices revealed nonvolatile memory behavior with a higher ON/OFF resistance ratio (∼105-107). Significantly, the current conduction in the filament and resistive switching behavior depend majorly on the presence of Al electrode and electrochemically active silver (Ag) element in the PMMA matrix. A trap-controlled space charge limited conduction (SCLC) mechanism constitutes the resistive switching in the Al/PMMA/Al device, whereas the current conduction governed by ohmic behavior influences the resistive switching in the Ag-including devices. The depth-profiling X-ray photoelectron spectroscopy (XPS) study evidences the conducting filament formation processes in the PMMA-based devices. These results with different conduction mechanisms provide further insights into the understanding of the resistive switching behavior in the polymer-based devices by simply rearranging the device configuration.
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Affiliation(s)
- Karthik Krishnan
- Corrosion and Material Protection Division, CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi TN 630-003 India
| | - Shaikh Mohammad Tauquir
- Corrosion and Material Protection Division, CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi TN 630-003 India
| | - Saranyan Vijayaraghavan
- Corrosion and Material Protection Division, CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi TN 630-003 India
| | - Ramesh Mohan
- Microsystem Packaging Group, CSIR-Central Electronics Engineering Research Institute Pilani Rajasthan-333031 India
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30
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Huang W, Xia X, Zhu C, Steichen P, Quan W, Mao W, Yang J, Chu L, Li X. Memristive Artificial Synapses for Neuromorphic Computing. NANO-MICRO LETTERS 2021; 13:85. [PMID: 34138298 PMCID: PMC8006524 DOI: 10.1007/s40820-021-00618-2] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Accepted: 01/29/2021] [Indexed: 05/06/2023]
Abstract
Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural networks in which synaptic devices that mimic biological synapses of the brain are the primary units. Mimicking synaptic functions with these devices is critical in neuromorphic systems. In the last decade, electrical and optical signals have been incorporated into the synaptic devices and promoted the simulation of various synaptic functions. In this review, these devices are discussed by categorizing them into electrically stimulated, optically stimulated, and photoelectric synergetic synaptic devices based on stimulation of electrical and optical signals. The working mechanisms of the devices are analyzed in detail. This is followed by a discussion of the progress in mimicking synaptic functions. In addition, existing application scenarios of various synaptic devices are outlined. Furthermore, the performances and future development of the synaptic devices that could be significant for building efficient neuromorphic systems are prospected.
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Affiliation(s)
- Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
| | - Xuwen Xia
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Chen Zhu
- College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Parker Steichen
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195-2120, USA
| | - Weidong Quan
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Weiwei Mao
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Jianping Yang
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Liang Chu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
| | - Xing'ao Li
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, People's Republic of China.
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31
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Xiao W, Shan L, Zhang H, Fu Y, Zhao Y, Yang D, Jiao C, Sun G, Wang Q, He D. High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing. NANOSCALE 2021; 13:2502-2510. [PMID: 33471021 DOI: 10.1039/d0nr08082a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A light-controlled artificial synapse, which mimics the human brain has been considered to be one of the ideal candidates for the fundamental physical architecture of a neuromorphic computing system owing to the possible abilities of high bandwidth and low power calculation. However, the low photosensitivity of synapse devices can affect the accuracy of recognition and classification in neuromorphic computing tasks. In this work, a planar light-controlled artificial synapse having high photosensitivity (Ion/Ioff > 1000) with a high photocurrent and a low dark current is realized based on a ZnO thin film grown by radiofrequency sputtering. The synaptic functions of the human brain such as sensory memory, short-term memory, long-term memory, duration-time-dependent-plasticity, light-intensity-dependent-plasticity, learning-experience behavior, neural facilitation, and spike-timing-dependent plasticity are successfully emulated using persistent photoconductivity characteristic of a ZnO thin film. Furthermore, the high classification accuracy of 90%, 92%, and 86% after 40 epochs for file type datasets, small digits, and large digit is realized with a three-layer neural network based on backpropagation where the numerical weights in the network layer are mapped directly to the conductance states of the experimental synapse devices. Finally, characterization and analysis reveal that oxygen vacancy defects and chemisorbed oxygen on the surface of the ZnO film are the main factors that determine the performance of the device.
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Affiliation(s)
- Wei Xiao
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Linbo Shan
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Haitao Zhang
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Yujun Fu
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Yanfei Zhao
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Dongliang Yang
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Chaohui Jiao
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Guangzhi Sun
- Wuhan Secondary Ship Design and Research Institute, Wuhan 430064, China
| | - Qi Wang
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Deyan He
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
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Wang X, Lu Y, Zhang J, Zhang S, Chen T, Ou Q, Huang J. Highly Sensitive Artificial Visual Array Using Transistors Based on Porphyrins and Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005491. [PMID: 33325607 DOI: 10.1002/smll.202005491] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2020] [Revised: 11/20/2020] [Indexed: 06/12/2023]
Abstract
Artificial visual systems with image sensing and storage functions have considerable potential in the field of artificial intelligence. Light-stimulated synaptic devices can be applied for neuromorphic computing to build artificial visual systems. Here, optoelectronic synaptic transistors based on 5,15-(2-hydroxyphenyl)-10,20-(4-nitrophenyl)porphyrin (TPP) and dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene (DNTT) are demonstrated. By utilizing stable TPP with high light absorption, the number of photogenerated carriers in the transport layer can be increased significantly. The devices exhibit high photosensitivity and tunable synaptic plasticity. The synaptic weight can be effectively modulated by the intensity, width, and wavelength of the light signals. Due to the high light absorption of TPP, an ultrasensitive artificial visual array based on these devices is developed, which can detect weak light signals as low as 1 µW cm-2 . Low-voltage operation is further demonstrated. Even with applied voltages as low as -70 µV, the devices can still show obvious responses, leading to an ultralow energy consumption of 1.4 fJ. The devices successfully demonstrate image sensing and storage functions, which can accurately identify visual information. In addition, the devices can preprocess information and achieve noise reduction. The excellent synaptic behavior of the TPP-based electronics suggests their good potential in the development of new intelligent visual systems.
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Affiliation(s)
- Xin Wang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
| | - Yang Lu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
| | - Shiqi Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
| | - Tianqi Chen
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
| | - Qingqing Ou
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
| | - Jia Huang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201804, P. R. China
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Shanghai, 200434, P. R. China
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33
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Hulea M, Ghassemlooy Z, Rajbhandari S, Younus OI, Barleanu A. Optical Axons for Electro-Optical Neural Networks. SENSORS (BASEL, SWITZERLAND) 2020; 20:E6119. [PMID: 33121207 PMCID: PMC7663001 DOI: 10.3390/s20216119] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Revised: 10/19/2020] [Accepted: 10/23/2020] [Indexed: 11/30/2022]
Abstract
Recently, neuromorphic sensors, which convert analogue signals to spiking frequencies, have been reported for neurorobotics. In bio-inspired systems these sensors are connected to the main neural unit to perform post-processing of the sensor data. The performance of spiking neural networks has been improved using optical synapses, which offer parallel communications between the distanced neural areas but are sensitive to the intensity variations of the optical signal. For systems with several neuromorphic sensors, which are connected optically to the main unit, the use of optical synapses is not an advantage. To address this, in this paper we propose and experimentally verify optical axons with synapses activated optically using digital signals. The synaptic weights are encoded by the energy of the stimuli, which are then optically transmitted independently. We show that the optical intensity fluctuations and link's misalignment result in delay in activation of the synapses. For the proposed optical axon, we have demonstrated line of sight transmission over a maximum link length of 190 cm with a delay of 8 μs. Furthermore, we show the axon delay as a function of the illuminance using a fitted model for which the root mean square error (RMS) similarity is 0.95.
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Affiliation(s)
- Mircea Hulea
- Faculty of Automatic Control and Computer Engineering at Gheorghe Asachi Technical University of Iasi, 700050 Iasi, Romania;
| | - Zabih Ghassemlooy
- Optical Communications Research Group, Faculty of Engineering and Environment at Northumbria University, Newcastle upon Tyne NE7 7XA, UK; (Z.G.); (O.I.Y.)
| | | | - Othman Isam Younus
- Optical Communications Research Group, Faculty of Engineering and Environment at Northumbria University, Newcastle upon Tyne NE7 7XA, UK; (Z.G.); (O.I.Y.)
| | - Alexandru Barleanu
- Faculty of Automatic Control and Computer Engineering at Gheorghe Asachi Technical University of Iasi, 700050 Iasi, Romania;
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Li X, Yang JG, Ma HP, Liu YH, Ji ZG, Huang W, Ou X, Zhang DW, Lu HL. Atomic Layer Deposition of Ga 2O 3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:30538-30547. [PMID: 32539324 DOI: 10.1021/acsami.0c06476] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga2O3/ZnO composite film as the dielectric was investigated. By alternatively atomic-layer-depositing Ga2O3 and ZnO with different thickness, we can accurately control the oxygen vacancy concentration. When regulating ZnO to ∼31%, the RRAMs exhibit a forming-free property as well as outstanding performance, including the ratio of a high resistance state to the low resistance state of 1000, retention time of more than 1 × 104 s, and the endurance of 100. By preparing RRAMs of different Zn concentration, we carried out a comparative study and explored the physical origin for the forming-free property as well as good performance. Finally, a unified model is proposed to account for the resistive switching and the current conduction mechanism, providing meaningful insights in the development of high-quality and forming-free RRAMs for future memory and neuromorphic applications.
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Affiliation(s)
- Xing Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jian-Guo Yang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hong-Ping Ma
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu-Hang Liu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zhi-Gang Ji
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai 200240, China
| | - Wei Huang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
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35
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Liu S, Chen X, Liu G. Conjugated polymers for information storage and neuromorphic computing. POLYM INT 2020. [DOI: 10.1002/pi.6017] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
- Shuzhi Liu
- School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China
| | - Xinhui Chen
- School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China
| | - Gang Liu
- School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China
- Green Catalysis Center and College of Chemistry Zhengzhou University Zhengzhou China
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36
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Kim MK, Lee JS. Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907826. [PMID: 32053265 DOI: 10.1002/adma.201907826] [Citation(s) in RCA: 44] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Revised: 01/04/2020] [Indexed: 06/10/2023]
Abstract
A number of synapse devices have been intensively studied for the neuromorphic system which is the next-generation energy-efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant attention. In particular, the photonic synapse devices using persistent photoconductivity (PPC) phenomena in oxide semiconductors are receiving much attention due to the similarity between relaxation characteristics of PPC phenomena and Ca2+ dynamics of biological synapses. However, these devices have limitations in its controllability of the relaxation characteristics of PPC behaviors. To utilize the oxide semiconductor as photonic synapse devices, relaxation behavior needs to be accurately controlled. In this study, a photonic synapse device with controlled relaxation characteristics by using an oxide semiconductor and a ferroelectric layer is demonstrated. This device exploits the PPC characteristics to demonstrate synaptic functions including short-term plasticity, paired-pulse facilitation (PPF), and long-term plasticity (LTP). The relaxation properties are controlled by the polarization of the ferroelectric layer, and this polarization is used to control the amount by which the conductance levels increase during PPF operation and to enhance LTP characteristics. This study provides an important step toward the development of photonic synapses with tunable synaptic functions.
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Affiliation(s)
- Min-Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
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37
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He HK, Yang FF, Yang R. Flexible full two-dimensional memristive synapses of graphene/WSe2−xOy/graphene. Phys Chem Chem Phys 2020; 22:20658-20664. [DOI: 10.1039/d0cp03822a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
van der Waals heterostructures realized by stacking different two-dimensional materials offer the possibility to design new devices with atomic-level precision.
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Affiliation(s)
- Hui-Kai He
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
- P. R. China
| | - Fan-Fan Yang
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
- P. R. China
| | - Rui Yang
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
- P. R. China
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38
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Duan N, Li Y, Chiang HC, Chen J, Pan WQ, Zhou YX, Chien YC, He YH, Xue KH, Liu G, Chang TC, Miao XS. An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems. NANOSCALE 2019; 11:17590-17599. [PMID: 31461106 DOI: 10.1039/c9nr04195h] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The practical application of optoelectronic artificial synapses in neuromorphic visual systems is still hindered by their limited functionality, reliability and the challenge of mass production. Here, an electro-photo-sensitive synapse based on a highly reliable amorphous InGaZnO thin-film transistor is demonstrated. Not only does the synapse respond to electrical voltage spikes due to charge trapping/detrapping, but also the weight is modified directly by persistent photocurrent effects under UV-light stimulation. Representative forms of synaptic plasticity, including inhibitory and excitatory postsynaptic currents, frequency-dependent characteristics, short-term to long-term plasticity transitions, and summation effects, are successfully demonstrated. In particular, optoelectronic synergetic modulation leads to reconfigurable excitatory and inhibitory synaptic behaviors, which provides a promising way to achieve the homeostatic regulation of synaptic weights. Moreover, the analogue channel conductance with 100 states is used as the weight update rule to perform MNIST handwritten digit recognition, using system-level LeNet-5 convolutional neural network simulations. The network shows a high recognition accuracy of 95.99% and good tolerance to noisy input patterns. This study highlights the commercial potential of mature optoelectronic InGaZnO transistor technology in edge neuromorphic systems.
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Affiliation(s)
- Nian Duan
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
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39
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Kumar M, Abbas S, Lee JH, Kim J. Controllable digital resistive switching for artificial synapses and pavlovian learning algorithm. NANOSCALE 2019; 11:15596-15604. [PMID: 31403638 DOI: 10.1039/c9nr02027f] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The fundamental unit of the nervous system is a synapse, which is involved in transmitting information between neurons as well as learning, memory, and forgetting processes. Two-terminal memristors can fulfil most of these requirements; however, their poor dynamic changes in resistance to input electric stimuli remain an obstacle, which must be improved for accurate and quick information processing. Herein, we demonstrate the synaptic properties of ZnO-based memristors, which were significantly enhanced (∼340 times) by geometrical modulation due to the localized electric field enhancement. Specifically, by inserting Ag-nanowires and Ag-dots into the ZnO/Si interface, the resistive switching could be controlled from a digital to analog mode. A finite element simulation revealed that the presence of Ag could enhance the localized electric field, which in turn improved the migration of ionic species. Further, the device showed a variety of comprehensive synaptic functions, for instance, paired-pulse facilitation and transformation from short-term plasticity to long-term plasticity, including the Pavlovian associative learning process in a human brain. Our study presents a novel architecture to enhance the synaptic sensitivity, and its uses in practical applications, including the artificial learning algorithm.
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Affiliation(s)
- Mohit Kumar
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon, 22012, Republic of Korea and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea.
| | - Sohail Abbas
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon, 22012, Republic of Korea and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea.
| | - Jung-Ho Lee
- Department of Materials and Chemical Engineering, Hanyang University, Ansan, Kyunggido 15588, Korea.
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon, 22012, Republic of Korea and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea.
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40
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Wang Y, Zhang Z, Xu M, Yang Y, Ma M, Li H, Pei J, Shi L. Self-Doping Memristors with Equivalently Synaptic Ion Dynamics for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2019; 11:24230-24240. [PMID: 31119929 DOI: 10.1021/acsami.9b04901] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The accumulation and extrusion of Ca2+ ions in the pre- and post-synaptic terminals play crucial roles in initiating short- and long-term plasticity (STP and LTP) in biological synapses, respectively. Mimicking these synaptic behaviors by electronic devices represents a vital step toward realization of neuromorphic computing. However, the majority of reported synaptic devices usually focus on the emulation of qualitatively synaptic behaviors; devices that can truly emulate the physical behavior of the synaptic Ca2+ ion dynamics in STP and LTP are rarely reported. In this work, Ag/Ag:Ta2O5/Pt self-doping memristors were developed to equivalently emulate the Ca2+ ion dynamics of biological synapses. With conductive filaments from double sources, these memristors produced unique double-switching behavior under voltage sweeps and demonstrated several essential synaptic behaviors under pulse stimuli, including STP, LTP, STP to LTP transition, and spike-rate-dependent plasticity. Experimental results and nanoparticle dynamic simulations both showed that Ag atoms from double sources could mimic Ca2+ dynamics in the pre- and post-synaptic terminals under stimuli. A perceptron network with an STP to LTP transition layer based on the self-doping memristors was also introduced and evaluated; simulations showed that this network could solve noisy figure recognition tasks efficiently. All of these results indicate that the self-doping memristors are promising components for future hardware creation of neuromorphic systems and emulate the characteristics of the brain.
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41
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Kumar M, Kim HS, Kim J. A Highly Transparent Artificial Photonic Nociceptor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900021. [PMID: 30924201 DOI: 10.1002/adma.201900021] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2019] [Revised: 02/08/2019] [Indexed: 06/09/2023]
Abstract
A nociceptor is an essential element in the human body, alerting us to potential damage from extremes in temperature, pressure, etc. Realizing nociceptive behavior in an electronics device remains a central issue for researchers, designing neuromorphic devices. This study proposes and demonstrates an all-oxide-based highly transparent ultraviolet-triggered artificial nociceptor, which responds in a very similar way to the human eye. The device shows a high transmittance (>65%) and very low absorbance in the visible region. The current-voltage characteristics show loop opening, which is attributed to the charge trapping/detrapping. Further, the ultraviolet-stimuli-induced versatile criteria of a nociceptor such as a threshold, relaxation, allodynia, and hyperalgesia are demonstrated under self-biased condition, providing an energy-efficient approach for the neuromorphic device operation. The reported optically controlled features open a new avenue for the development of transparent optoelectronic nociceptors, artificial eyes, and memory storage applications.
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Affiliation(s)
- Mohit Kumar
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea
| | - Hong-Sik Kim
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 22012, Republic of Korea
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42
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Gao S, Liu G, Yang H, Hu C, Chen Q, Gong G, Xue W, Yi X, Shang J, Li RW. An Oxide Schottky Junction Artificial Optoelectronic Synapse. ACS NANO 2019; 13:2634-2642. [PMID: 30730696 DOI: 10.1021/acsnano.9b00340] [Citation(s) in RCA: 86] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium-tin oxide/Nb-doped SrTiO3 (ITO/Nb:SrTiO3) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO3 interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and "learning-experience" behavior for optical information manipulation. More importantly, the photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of the mechanical aperture device showing adaptive and stable optical perception capability under different illuminating conditions but also making the artificial synapse suitable for the mimicry of interest-modulated human visual memories.
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Affiliation(s)
- Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Gang Liu
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Chao Hu
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Qilai Chen
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Guodong Gong
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Wuhong Xue
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Xiaohui Yi
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo , Zhejiang 315201 , China
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43
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Kumar M, Abbas S, Kim J. All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2018; 10:34370-34376. [PMID: 30207159 DOI: 10.1021/acsami.8b10870] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
The neuromorphic system processes enormous information even with very low energy consumption, which practically can be achieved with photonic artificial synapse. Herein, a photonic artificial synapse is demonstrated based on an all-oxide highly transparent device. The device consists of conformally grown In2O3/ZnO thin films on a fluorine-doped tin oxide/glass substrate. The device showed a loop opening in current-voltage characteristics, which was attributed to charge trapping/detrapping. Ultraviolet illumination-induced versatile features such as short-term/long-term plasticity and paired-pulse facilitation were truly confirmed. Further, photonic potentiation and electrical habituation were implemented. This study paves the way to develop a device in which current can be modulated under the action of optical stimuli, serving as a fundamental step toward the realization of low-cost synaptic behavior.
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