The shear mode of multilayer graphene

Quantum twisting microscopy of phonons in twisted bilayer graphene

The coupling between electrons and phonons is one of the fundamental interactions in solids, underpinning a wide range of phenomena, such as resistivity, heat conductivity and superconductivity. However, direct measurements of this coupling for individual phonon modes remain a substantial challenge. In this work, we introduce a new technique for mapping phonon dispersions and electron-phonon coupling (EPC) in van der Waals (vdW) materials. By generalizing the quantum twisting microscope1 (QTM) to cryogenic temperatures, we demonstrate its capability to map not only electronic dispersions through elastic momentum-conserving tunnelling but also phononic dispersions through inelastic momentum-conserving tunnelling. Crucially, the inelastic tunnelling strength provides a direct and quantitative measure of the momentum and mode-resolved EPC. We use this technique to measure the phonon spectrum and EPC of twisted bilayer graphene (TBG) with twist angles larger than 6°. Notably, we find that, unlike standard acoustic phonons, whose coupling to electrons diminishes as their momentum tends to zero, TBG exhibits a low-energy mode whose coupling increases with decreasing twist angle. We show that this unusual coupling arises from the modulation of the interlayer tunnelling by a layer-antisymmetric 'phason' mode of the moiré system. The technique demonstrated here opens the way for examining a large variety of other neutral collective modes that couple to electronic tunnelling, including plasmons2, magnons3 and spinons4 in quantum materials.

Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits

Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe2 and CuInP2S6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Gold-assisted exfoliation (GAE) is a groundbreaking mechanical exfoliation technique that produces centimeter-scale single-crystal monolayers of 2D materials. Such large, high-quality films offer unparalleled advantages over the micron-sized flakes typically produced by conventional exfoliation techniques, significantly accelerating the research and technological advancements in the field of 2D materials. Despite its wide applications, the fundamental mechanism of GAE remains poorly understood. In this study, using MoS₂ on Au as a model system, ultra-low frequency Raman spectroscopy is employed to elucidate how the interlayer interactions within MoS2 crystals are impacted by the gold substrate. The results reveal that the coupling at the first MoS2-MoS2 interface between the adhered layer on the gold substrate and the adjacent layer is substantially weakened, with the binding force being reduced to nearly zero. This renders the first interface the weakest point in the system, thereby the crystal preferentially cleaves at this junction, generating large-area monolayers with sizes comparable to the parent crystal. Biaxial strain in the adhered layer, induced by the gold substrate, is identified as the driving factor for the decoupling effect. The strain-induced decoupling effect is established as the primary mechanism of GAE, which can also play a significant role in general mechanical exfoliations.

Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity Effects

We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength, and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the impact of spatial coherence of photon and phonon fields on phonon excitation via photon or phonon cavity engineering.

Unlocking Mesoscopic Disorder in Graphitic Carbon with Spectroelectrochemistry

Intrinsic structural and oxidic defects activate graphitic carbon electrodes towards electrochemical reactions underpinning energy conversion and storage technologies. Yet, these defects can also disrupt the long-range and periodic arrangement of carbon atoms, thus, the characterization of graphitic carbon electrodes necessitates in-situ atomistic differentiation of graphitic regions from mesoscopic bulk disorder. Here, we leverage the combined techniques of in-situ attenuated total reflectance infrared spectroscopy and first-principles calculations to reveal that graphitic carbon electrodes exhibit electric-field dependent infrared activity that is sensitive to the bulk mesoscopic intrinsic disorder. With this platform, we identify graphitic regions from amorphous domains by discovering that they demonstrate opposing electric-field-dependent infrared activity under electrochemical conditions. Our work provides a roadmap for identifying mesoscopic disorder in bulk carbon materials under potential bias.

Enhancement Effect of Low-Frequency Raman Modes in Graphene Nanoscrolls

Graphene nanoscrolls (GNSs) are unique structures with interlayer coupling modes distinct from those in graphene and carbon nanotubes, exhibiting potential physical properties yet to be explored. Here we investigated the low-frequency Raman modes in GNSs formed from 1 to 3 layer graphene (1-3LG). The results of the Raman spectroscopy show that both shear (C) and layer breathing (LB) modes have appeared in monolayer graphene nanoscrolls (1L-GNSs), although these modes never exist in the flat 1LG. Remarkably, both 2L- and 3L-GNSs exhibited multiple low-frequency modes linked to other layer numbers, revealing the emergence of additional interlayer coupling. Annealing significantly enhanced low-frequency Raman signals and introduced additional modes, with the C21 mode intensity increasing nearly 3-fold and LBM61 intensity rising 16-fold. Transmission electron microscopy (TEM) imaging showed reduced ∼0.3 Å interlayer spacing after annealing, indicating stronger interlayer coupling. This work provides important scientific evidence for understanding the interlayer coupling in GNSs.

Mechanical and electromechanical properties of 2D materials studied via in situ microscopy techniques

Two-dimensional (2D) materials with van der Waals stacking have been reported to have extraordinary mechanical and electromechanical properties, which give them revolutionary potential in various fields. However, due to the atomic-scale thickness of these 2D materials, their fascinating properties cannot be effectively characterized in many cases using conventional measurement techniques. Based on typical microscopy techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM), a range of in situ microscopy techniques have been developed to systematically quantify the mechanical and electromechanical properties of 2D materials. This review highlights the advancements of in situ microscopy techniques for studying elasticity and fracture, adhesion and separation, structural superlubricity, as well as c-axis piezoresistivity and rotation angle-related transport of 2D materials. The methods and results of various microscopy experiments, including nanoindentation using AFM, pressurized bubble tests, self-retraction experiments, pull-to-peel methods and so on, are compared, and their respective advantages and limitations are discussed. Finally, we summarize the current challenges in these microscopy techniques and outline development opportunities.

Thickness dependence of wavenumbers and optical-activity selection rule of zone-center phonons in two-dimensional gallium sulfide metal monochalcogenide

Gallium sulfide (GaS) stands out as a versatile nonlinear optical material for green-blue optoelectronic and photocatalytic nano-devices. In addition, the in-plane breaking strain and mechanical strength of layered GaS make it a promising candidate for next-generation flexible nanodevices. The fast and reliable assessment of the number of layers, without sample loss, is key for these applications. Here we unveil the influence of dimensionality in the structural, mechanical, and vibrational properties of GaS by applying density-functional theory-based quantum-simulations and group-theory analysis. We find its intralayer structure and interlayer distances are essentially independent of the number of layers, in agreement with the van der Waals forces as dominant interlayer interactions. The translational symmetry breaking along the stacking direction results in different structural symmetries for monolayers, N-odd layers, N-even layers, and bulk geometries. Its force constants against rigid-layer shear, KLSM = 1.35 × 1019 N m-3, and breathing, KLBM = 5.00 × 1019 N m-3, displacements remain the same from bulk to bilayer structures. The related stiffness coefficients in bulk are C44 = 10.2 GPa and C33 = 37.7 GPa, respectively. This insight into GaS interlayer interactions and elastic coefficients reveals it as a promising lubricant for nano-mechanic applications and it is easy to cleave for thickness engineering, even in comparison with layered graphite, MoS2 and other transition metal dichalcogenides and group-IIIA metal monochalcogenides. We present the GaS Raman and infrared spectra dependence on the layer number as strategies for sample thickness characterization and derive formulas for distinguishing the number of layers in both high and low-frequency regimes. In addition, our analysis of their optical-activity selection rules and polarization dependencies is applicable to isostructural group-IIIA metal monochalcogenides with 2H-layer stacking, such as gallium/indium sulphide/selenide. These results contribute to rapid and non-destructive characterization of the material's structure, which is of paramount importance for the manufacturing of devices and the utilization of its diverse properties.

Scanning Probe Microscopies for Characterizations of 2D Materials

2D materials are intriguing due to their remarkably thin and flat structure. This unique configuration allows the majority of their constituent atoms to be accessible on the surface, facilitating easier electron tunneling while generating weak surface forces. To decipher the subtle signals inherent in these materials, the application of techniques that offer atomic resolution (horizontal) and sub-Angstrom (z-height vertical) sensitivity is crucial. Scanning probe microscopy (SPM) emerges as the quintessential tool in this regard, owing to its atomic-level spatial precision, ability to detect unitary charges, responsiveness to pico-newton-scale forces, and capability to discern pico-ampere currents. Furthermore, the versatility of SPM to operate under varying environmental conditions, such as different temperatures and in the presence of various gases or liquids, opens up the possibility of studying the stability and reactivity of 2D materials in situ. The characteristic flatness, surface accessibility, ultra-thinness, and weak signal strengths of 2D materials align perfectly with the capabilities of SPM technologies, enabling researchers to uncover the nuanced behaviors and properties of these advanced materials at the nanoscale and even the atomic scale.

Ta4SBr11: A Cluster Mott Insulator with a Corrugated, Van der Waals Layered Structure

The compound Ta4SBr11 was prepared by a comproportionation reaction of tantalum bromide with tantalum and elemental sulfur. The crystal structure, as refined by single-crystal X-ray diffraction, is composed of clusters with Ta4S cores, arranged in corrugated van der Waals layers. Individual layers appear to be displaced relative to each other along one direction. Successful crystal growth in a melt of CsBr yielded black platelets of Ta4SBr11, which were used to investigate the electrical properties of the compound. The electronic structure was studied by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy and by density functional theory (DFT) band structure calculations, revealing this material to be a small-gap semiconductor. DFT results, in combination with magnetic susceptibility measurements, suggest that metallicity originating from the one unpaired Ta d electron per cluster is most likely suppressed by electronic correlations, forming a cluster Mott insulator.

Nanoscale chemical characterization of materials and interfaces by tip-enhanced Raman spectroscopy

Materials and their interfaces are the core for the development of a large variety of fields, including catalysis, energy storage and conversion. In this case, tip-enhanced Raman spectroscopy (TERS), which combines scanning probe microscopy with plasmon-enhanced Raman spectroscopy, is a powerful technique that can simultaneously obtain the morphological information and chemical fingerprint of target samples at nanometer spatial resolution. It is an ideal tool for the nanoscale chemical characterization of materials and interfaces, correlating their structures with chemical performances. In this review, we begin with a brief introduction to the nanoscale characterization of materials and interfaces, followed by a detailed discussion on the recent theoretical understanding and technical improvements of TERS, including the origin of enhancement, TERS instruments, TERS tips and the application of algorithms in TERS. Subsequently, we list the key experimental issues that need to be addressed to conduct successful TERS measurements. Next, we focus on the recent progress of TERS in the study of various materials, especially the novel low-dimensional materials, and the progresses of TERS in studying different interfaces, including both solid-gas and solid-liquid interfaces. Finally, we provide an outlook on the future developments of TERS in the study of materials and interfaces.

Ultralow-Frequency Tip-Enhanced Raman Scattering Discovers Nanoscale Radial Breathing Mode on Strained 2D Semiconductors

Collective excitations including plasmons, magnons, and layer-breathing vibration modes emerge at an ultralow frequency (<1 THz) and are crucial for understanding van der Waals materials. Strain at the nanoscale can drastically change the property of van der Waals materials and create localized states like quantum emitters. However, it remains unclear how nanoscale strain changes collective excitations. Herein, ultralow-frequency tip-enhanced Raman spectroscopy (TERS) with sub-10 nm resolution under ambient conditions is developed to explore the localized collective excitation on monolayer semiconductors with nanoscale strains. A new vibrational mode is discovered at around 12 cm-1 (0.36 THz) on monolayer MoSe2 nanobubbles and it is identified as the radial breathing mode (RBM) of the curved monolayer. The correlation is determined between the RBM frequency and the strain by simultaneously performing deterministic nanoindentation and TERS measurement on monolayer MoSe2. The generality of the RBM in nanoscale curved monolayer WSe2 and bilayer MoSe2 is demonstrated. Using the RBM frequency, the strain of the monolayer MoSe2 on the nanoscale can be mapped. Such an ultralow-frequency vibration from curved van der Waals materials provides a new approach to study nanoscale strains and points to more localized collective excitations to be discovered at the nanoscale.

Observation of Chirality Transfer in Twisted Few-Layer Graphene

Chiral materials are the focus of research in a variety of fields such as chiroptical sensing, biosensing, catalysis, and spintronics. Twisted two-dimensional (2D) materials are rapidly developing into a class of atomically thin chiral materials that can be effectively modulated through interlayer twist. However, chirality transfer in chiral 2D materials has not been reported. Here, we show that the chirality from the twist interface of graphene can directly transfer to achiral few-layer graphene and lead to a strong chiroptical response probed with circularly polarized Raman spectroscopy. Distinct Raman optical activity (ROA) for the interlayer shear modes in achiral few-layer graphene is observed, with the degree of polarization reaching as high as 0.5. These findings demonstrate the programmability of chiroptical response through stacking and twist engineering in 2D materials and offer insights into the transfer of chirality in atomically thin chiral materials for optical and electronic applications.

A Resonance-Sensitive Ultralow-Frequency Raman Mode in Twisted Bilayer Graphene

Twisted bilayer graphene (tBLG) possesses intriguing physical properties including unconventional superconductivity, enhanced light-matter interaction due to the formation of van Hove singularities (vHS), and a divergence of density of states in the electronic band structures. The vHS energy band gap provides optical resonant transition channels that can be tuned by the twist angle and interlayer coupling. Raman spectroscopy provides rich information on the vHS structure of tBLG. Here, we report the discovery of an ultralow-frequency Raman mode at ∼49 cm-1 in tBLG. This mode is assigned to the combination of ZA (an out-of-plane acoustic phonon) and TA (a transverse acoustic phonon) phonons, and the Raman scattering is proposed to occur at the so-called mini-valley. This mode is found to be particularly sensitive to the change in vHS in tBLG. Our findings may deepen the understanding of Raman scattering in tBLG and help to reveal vHS-related electron-phonon interactions in tBLG.

Theoretical and computational methods for tip- and surface-enhanced Raman scattering

Raman spectroscopy is a versatile tool for acquiring molecular structure information. The incorporation of plasmonic fields has significantly enhanced the sensitivity and resolution of surface-enhanced Raman scattering (SERS) and tip-enhanced Raman spectroscopy (TERS). The strong spatial confinement effect of plasmonic fields has challenged the conventional Raman theory, in which a plane wave approximation for the light has been adopted. In this review, we comprehensively survey the progress of a generalized theory for SERS and TERS in the framework of effective field Hamiltonian (EFH). With this approach, all characteristics of localized plasmonic fields can be well taken into account. By employing EFH, quantitative simulations at the first-principles level for state-of-the-art experimental observations have been achieved, revealing the underlying intrinsic physics in the measurements. The predictive power of EFH is demonstrated by several new phenomena generated from the intrinsic spatial, momentum, time, and energy structures of the localized plasmonic field. The corresponding experimental verifications are also carried out briefly. A comprehensive computational package for modeling of SERS and TERS at the first-principles level is introduced. Finally, we provide an outlook on the future developments of theory and experiments for SERS and TERS.

Effect of dimensionality on the excitation wavelength dependence of the Fano-Raman line-shape: a brief review

The already existing heterogeneity in nanomaterials makes it an intriguing yet complex system to study size effect vis-à-vis other external perturbations and thereby local modifications at the nanoscale, thus demanding an improved tool and analysis for the choice of study. The analysis of existential subtle perturbations and interactions in a wide class of materials using Raman spectromicroscopy has proved to be of utmost importance, and various phenomena such as quantum confinement and its interplay with Fano resonance have already been investigated in nanomaterials, including the role of various perturbations such as temperature, pressure, doping, bias, and excitation wavelength on Raman spectral line shape parameters. Amongst different perturbations that cause a change in the spectral profile of Fano resonance, the gray area of wavelength dependence of Fano Raman line shape profiles has been least analysed in the literature. Moreover, the true signature of Fano resonance in nanoscaled systems, which is the wavelength dependence of Fano interaction, remains the least discussed. This review summarises the wavelength dependent correlation of Fano resonance and its effect on the Raman spectral line-shape parameters in some bulk materials, nanomaterials, and molecular systems involving heavily doped p-type crystalline silicon, 2-D MoS2, graphene, WS2, single walled carbon nanotubes, etc. A brief overview of Fano resonance in metamaterials and photonic systems is also provided.

Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning

Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) and the application of a semantic segmentation convolutional neural network (CNN) to accurately and rapidly identify thicknesses of MoS2 flakes. A second CNN model is trained to provide precise predictions on the twist angle of CVD-grown bilayer flakes. This model harnessed a data set comprising over 10,000 synthetic images, encompassing geometries spanning from hexagonal to triangular shapes. Subsequent validation of the deep learning predictions on twist angles was executed through the second harmonic generation and Raman spectroscopy. Our results introduce a scalable methodology for automated inspection of twisted atomically thin CVD-grown bilayers.

Ultrafast acousto-optic modulation at the near-infrared spectral range by interlayer vibrations

The acousto-optic modulation over a broad near-infrared (NIR) spectrum with high speed, excellent integrability, and relatively simple scheme is crucial for the application of next-generation opto-electronic and photonic devices. This study aims to experimentally demonstrate ultrafast acousto-optic phenomena in the broad NIR spectral range of 0.77-1.1 eV (1130-1610 nm). Hundreds of GHz of light modulation are revealed in an all-optical configuration by combining ultrafast optical spectroscopy and light-sound conversion in 10-20 nm-thick bismuth selenide (Bi2Se3) van der Waals thin films. The modified optical transition energy and the line shape in the NIR band indicate phonon-photon interactions, resulting in a modulation of optical characteristics by the photoexcited interlayer vibrations in Bi2Se3. This all-optical, ultrafast acousto-optic modulation approach may open avenues for next-generation nanophotonic applications, including optical communications and processing, due to the synergistic combination of large-area capability, high photo-responsivity, and frequency tunability in the NIR spectral range.

Interlayer bond polarizability model for interlayer phonons in van der Waals heterostructures

Raman scattering provides essential insights into phonons, electronic structures and electron-phonon coupling within solids through the intensity of Raman peaks, which cannot be easily quantified using the classical bond polarizability model. The interlayer bond polarizability model (IBPM) had been developed to understand the Raman intensity of layer-breathing modes (LBMs) in two-dimensional materials. However, the quantitative understanding of the LBM intensity of a van der Waals heterostructure (vdWH) remains challenging. Here, in polynary vdWHs comprising twisted multilayer graphene (tMLG), MoS2 and hBN, we observed a series of LBMs, whose intensity is markedly dependent on the excitation energy and twist angle of the tMLG constituent. An improved IBPM is proposed to quantitatively understand the Raman intensity of LBMs in the tMLG-based vdWHs, including the emergence or absence of a specific LBM when the excitation energy is resonant with the electronic states of tMLG or MoS2 constituents. This work underscores the significant potential of the improved IBPM in accurately understanding and predicting the intensity profile of LBM in polynary vdWHs, even for the case of Raman scattering with excitation energies selectively resonant with the electronic states of the corresponding specific constituents.

Ultrafast Charge Transfer and Recombination Dynamics in Monolayer-Multilayer WSe2 Junctions Revealed by Time-Resolved Photoemission Electron Microscopy

The ultrafast carrier dynamics of junctions between two chemically identical, but electronically distinct, transition metal dichalcogenides (TMDs) remains largely unknown. Here, we employ time-resolved photoemission electron microscopy (TR-PEEM) to probe the ultrafast carrier dynamics of a monolayer-to-multilayer (1L-ML) WSe2 junction. The TR-PEEM signals recorded for the individual components of the junction reveal the sub-ps carrier cooling dynamics of 1L- and 7L-WSe2, as well as few-ps exciton-exciton annihilation occurring on 1L-WSe2. We observe ultrafast interfacial hole (h) transfer from 1L- to 7L-WSe2 on an ∼0.2 ps time scale. The resultant excess h density in 7L-WSe2 decays by carrier recombination across the junction interface on an ∼100 ps time scale. Reminiscent of the behavior at a depletion region, the TR-PEEM image reveals the h density accumulation on the 7L-WSe2 interface, with a decay length ∼0.60 ± 0.17 μm. These charge transfer and recombination dynamics are in agreement with ab initio quantum dynamics. The computed orbital densities reveal that charge transfer occurs from the basal plane, which extends over both 1L and ML regions, to the upper plane localized on the ML region. This mode of charge transfer is distinctive to chemically homogeneous junctions of layered materials and constitutes an additional carrier deactivation pathway that should be considered in studies of 1L-TMDs found alongside their ML, a common occurrence in exfoliated samples.

Machine Learning-Assisted Computational Screening of Adhesive Molecules Derived from Dihydroxyphenyl Alanine

Marine mussels adhere to virtually any surface via 3,4-dihydroxyphenyl-L-alanines (L-DOPA), an amino acid largely contained in their foot proteins. The biofriendly, water-repellent, and strong adhesion of L-DOPA are unparalleled by any synthetic adhesive. Inspired by this, we computationally designed diverse derivatives of DOPA and studied their potential as adhesives or coating materials. We used first-principles calculations to investigate the adsorption of the DOPA derivatives on graphite. The presence of an electron-withdrawing group, such as nitrogen dioxide, strengthens the adsorption by increasing the π-π interaction between DOPA and graphite. To quantify the distribution of electron charge and to gain insights into the charge distribution at interfaces, we performed Bader charge analysis and examined charge density difference plots. We developed a quantitative structure-property relationship (QSPR) model using an artificial neural network (ANN) to predict the adsorption energy. Using the three-dimensional and quantum mechanical electrostatic potential of a molecule as a descriptor, the present quantum NN model shows promising performance as a predictive QSPR model.

Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is Accelerated by Wrinkling

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.

Enhanced Layer-Breathing Modes in van der Waals Heterostructures Based on Twisted Bilayer Graphene

The characterization of interlayer coupling in two-dimensional van der Waals heterostructures (vdWHs) is essential to understand their quantum behaviors and structural functionalities. Interlayer shear and layer-breathing (LB) phonons carry rich information on interlayer interaction, but they are usually too weak to be detected via standard Raman spectroscopy due to the weak electron-phonon coupling (EPC). Here, we report a universal strategy to enhance LB modes of vdWHs based on twisted bilayer graphene (tBLG). In both tBLG/hBN and tBLG/MoS₂ vdWHs, the resonantly excited electrons in tBLG can strongly couple to LB phonons extended over the entire layers in the vdWHs, whose resonance condition is tunable by the twist angle of tBLG. In vdWHs containing twisted graphene layers with multiple twisted interfaces, the EPC of LB phonons coming from the collective LB vibrations of entire heterostructure layers can be tuned by resonant excitation of programmable van Hove singularities according to each twisted interface. The universality and tunability of enhanced LB phonons by tBLG make it a promising method to investigate EPC and interlayer interaction in related vdWHs.

Identifying, Resolving, and Quantifying Anisotropy in ReS2 Nanomechanical Resonators

As an emerging two-dimensional semiconductor, rhenium disulfide (ReS₂ ) is renowned for its strong in-plane anisotropy in electrical, optical, and thermal properties. In contrast to the electrical, optical, optoelectrical, and thermal anisotropies that are extensively studied in ReS₂ , experimental characterization of mechanical properties has largely remained elusive. Here, it is demonstrated that the dynamic response in ReS₂ nanomechanical resonators can be leveraged to unambiguously resolve such disputes. Using anisotropic modal analysis, the parameter space for ReS₂ resonators in which mechanical anisotropy is best manifested in resonant responses is determined. By measuring their dynamic response in both spectral and spatial domains using resonant nanomechanical spectromicroscopy, it is clearly shown that ReS₂ crystal is mechanically anisotropic. Through fitting numerical models to experimental results, it is quantitatively determined that the in-plane Young's moduli are 127 and 201 GPa along the two orthogonal mechanical axes. In combination with polarized reflectance measurements, it is shown that the mechanical soft axis aligns with the Re-Re chain in the ReS₂ crystal. These results demonstrate that dynamic responses in nanomechanical devices can offer important insights into intrinsic properties in 2D crystals and provide design guidelines for future nanodevices with anisotropic resonant responses.

An Overview of Recycling Wastes into Graphene Derivatives Using Microwave Synthesis; Trends and Prospects

It is no secret that graphene, a two-dimensional single-layered carbon atom crystal lattice, has drawn tremendous attention due to its distinct electronic, surface, mechanical, and optoelectronic properties. Graphene also has opened up new possibilities for future systems and devices due to its distinct structure and characteristics which has increased its demand in a variety of applications. However, scaling up graphene production is still a difficult, daunting, and challenging task. Although there is a vast body of literature reported on the synthesis of graphene through conventional and eco-friendly methods, viable processes for mass graphene production are still lacking. This review focuses on the variety of unwanted waste materials, such as biowastes, coal, and industrial wastes, for producing graphene and its potential derivatives. Among the synthetic routes, the main emphasis relies on microwave-assisted production of graphene derivatives. In addition, a detailed analysis of the characterization of graphene-based materials is presented. This paper also highlights the current advances and applications through the recycling of waste-derived graphene materials using microwave-assisted technology. In the end, it would alleviate the current challenges and forecast the specific direction of waste-derived graphene future prospects and developments.

A natural indirect-to-direct band gap transition in artificially fabricated MoS2 and MoSe2 flowers

Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS₂ and MoSe₂ bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS₂ (MoSe₂) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS₂ (MoSe₂) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS₂ flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.

Batch Production of High-Quality Graphene Grids for Cryo-EM: Cryo-EM Structure of Methylococcus capsulatus Soluble Methane Monooxygenase Hydroxylase

Cryogenic electron microscopy (cryo-EM) has become a widely used tool for determining the protein structure. Despite recent technical advances, sample preparation remains a major bottleneck for several reasons, including protein denaturation at the air-water interface, the presence of preferred orientations, nonuniform ice layers, etc. Graphene, a two-dimensional allotrope of carbon consisting of a single atomic layer, has recently gained attention as a near-ideal support film for cryo-EM that can overcome these challenges because of its superior properties, including mechanical strength and electrical conductivity. Here, we introduce a reliable, easily implemented, and reproducible method to produce 36 graphene-coated grids within 1.5 days. To demonstrate their practical application, we determined the cryo-EM structure of Methylococcus capsulatus soluble methane monooxygenase hydroxylase (sMMOH) at resolutions of 2.9 and 2.5 Å using Quantifoil and graphene-coated grids, respectively. We found that the graphene-coated grid has several advantages, including a smaller amount of protein required and avoiding protein denaturation at the air-water interface. By comparing the cryo-EM structure of sMMOH with its crystal structure, we identified subtle yet significant geometrical changes at the nonheme diiron center, which may better indicate the active site configuration of sMMOH in the resting/oxidized state.

Quantum interference between dark-excitons and zone-edged acoustic phonons in few-layer WS2

Fano resonance which describes a quantum interference between continuum and discrete states, provides a unique method for studying strongly interacting physics. Here, we report a Fano resonance between dark excitons and zone-edged acoustic phonons in few-layer WS₂ by using the resonant Raman technique. The discrete phonons with large momentum at the M-point of the Brillouin zone and the continuum dark exciton states related to the optically forbidden transition at K and Q valleys are coupled by the exciton-phonon interactions. We observe rich Fano resonance behaviors across layers and modes defined by an asymmetry-parameter q: including constructive interference with two mirrored asymmetry Fano peaks (weak coupling, q > 1 and q < - 1), and destructive interference with Fano dip (strong coupling, ∣q∣ < < 1). Our results provide new insight into the exciton-phonon quantum interference in two-dimensional semiconductors, where such interferences play a key role in their transport, optical, and thermodynamic properties.

Relation between interfacial shear and friction force in 2D materials

Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical and chemical properties. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. By performing measurements on bulk graphite, and on epitaxial graphene films on SiC with different stacking orders and twisting, as well as in the presence of intercalated hydrogen, we find that the interfacial transverse shear modulus is critically controlled by the stacking order and the atomic layer-substrate interaction. Importantly, we demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. The experiments demonstrate a reciprocal relationship between friction force per unit contact area and interfacial shear modulus. The same relationship emerges from simulations with simple friction models, where the atomic layer-substrate interaction controls the shear stiffness and therefore the resulting friction dissipation.

Development of Microscopy Apparatus Switchable between Fluorescence and Ultralow-Frequency Raman Modes

In this study, a microscopy apparatus that can switch between the fluorescence microscopy and ultralow-frequency Raman microscopy modes was developed. The apparatus can be easily constructed by equipping a standard epi-illumination microscope with an additional port featuring a removable half mirror. Owing to the switchability, fluorescence imaging, and spectroscopy, Raman spectroscopy in the frequency range down to ∼10 cm^-1 can be performed using the apparatus. To demonstrate the advantageous features of this apparatus, micron-sized crystals of perylene, which have two polymorphic forms, were analyzed. The two polymorphs were clearly identified based on their shapes, fluorescence spectra, and ultralow-frequency Raman spectra, all of which can be observed with our apparatus alone. These results indicate that the apparatus is a powerful tool for the analysis and characterization of various nano-/micron-sized crystals.

Electron-phonon coupling and vibrational properties of size-selected linear carbon chains by resonance Raman scattering

UV resonance Raman spectroscopy of size-selected linear sp-carbon chains unveils vibrational overtones and combinations up to the fifth order. Thanks to the tunability of the synchrotron source, we excited each H-terminated polyyne (HC_nH with n = 8,10,12) to the maxima of its vibronic absorption spectrum allowing us to precisely determine the electronic and vibrational structure of the ground and excited states for the main observed vibrational mode. Selected transitions are shown to enhance specific overtone orders in the Raman spectrum in a specific way that can be explained by a simple analytical model based on Albrecht's theory of resonance Raman scattering. The determined Huang-Rhys factors indicate a strong and size-dependent electron-phonon coupling increasing with the sp-carbon chain length.

Highly Sensitive Electrochemical Detection of Azithromycin with Graphene-Modified Electrode

An electrochemical cell containing two graphite rods was filled with the appropriate electrolyte (0.2 M ammonia + 0.2 M ammonium sulphate) and connected to the exfoliation system to synthesize graphene (EGr). A bias of 7 V was applied between the anode and cathode for 3 h. After synthesis, the morphology and structure of the sample was characterized by SEM, XRD, and FTIR techniques. The material was deposited onto the surface of a glassy carbon (GC) electrode (EGr/GC) and employed for the electrochemical detection of azithromycin (AZT). The DPV signals recorded in pH 5 acetate containing 6 × 10^-5 M AZT revealed significant differences between the GC and EGr/GC electrodes. For EGr/GC, the oxidation peak was higher and appeared at lower potential (+1.12 V) compared with that of bare GC (+1.35 V). The linear range for AZT obtained with the EGr/GC electrode was very wide, 10^-8-10^-5 M, the sensitivity was 0.68 A/M, and the detection limit was 3.03 × 10^-9 M. It is important to mention that the sensitivity of EGr/GC was three times higher than that of bare GC (0.23 A/M), proving the advantages of using graphene-modified electrodes in the electrochemical detection of AZT.

Nano-engineering and nano-manufacturing in 2D materials: marvels of nanotechnology

Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.

Moiré Modulation of Van Der Waals Potential in Twisted Hexagonal Boron Nitride

When a twist angle is applied between two layered materials (LMs), the registry of the layers and the associated change in their functional properties are spatially modulated, and a moiré superlattice arises. Several works explored the optical, electric, and electromechanical moiré-dependent properties of such twisted LMs but, to the best of our knowledge, no direct visualization and quantification of van der Waals (vdW) interlayer interactions has been presented, so far. Here, we use tapping mode atomic force microscopy phase-imaging to probe the spatial modulation of the vdW potential in twisted hexagonal boron nitride. We find a moiré superlattice in the phase channel only when noncontact (long-range) forces are probed, revealing the modulation of the vdW potential at the sample surface, following AB and BA stacking domains. The creation of scalable electrostatic domains, modulating the vdW potential at the interface with the environment by means of layer twisting, could be used for local adhesion engineering and surface functionalization by affecting the deposition of molecules or nanoparticles.

Phonon-Limited Mobility in h-BN Encapsulated AB-Stacked Bilayer Graphene

The weak acoustic phonon scattering in graphene monolayer leads to high mobilities even at room temperatures. We identify the dominant role of the shear phonon mode scattering on the carrier mobility in AB-stacked graphene bilayer, which is absent in monolayer graphene. Using a microscopic tight-binding model, we reproduce experimental temperature dependence of mobilities in high-quality boron nitride encapsulated bilayer samples at temperatures up to ∼200  K. At elevated temperatures, the surface polar phonon scattering from boron nitride substrate contributes significantly to the measured mobilities of 15 000 to 20000  cm^{2}/Vs at room temperature and carrier concentration n∼10^{12}  cm^{-2}. A screened surface polar phonon potential for a dual-encapsulated bilayer and transferable tight-binding model allows us to predict mobility scaling with temperature and band gap for both electrons and holes in agreement with the experiment.

Shear Modes in a 2D Polar Metal

Low-frequency shear and breathing modes are important Raman signatures of two-dimensional (2D) materials, providing information on the number of layers and insights into interlayer interactions. We elucidate the nature of low-frequency modes in a 2D polar metal-2D Ga covalently bonded to a SiC substrate, using a first-principles Green's function-based approach. The low-frequency Raman modes are dominated by surface resonance modes, consisting primarily of out-of-phase shear modes in Ga, coupled to SiC phonons. Breathing modes are strongly coupled to the substrate and do not give rise to peaks in the phonon spectra. The highest-frequency shear mode blue-shifts significantly with increasing thickness, reflecting both an increase in the number of Ga layers and an increase in the effective interlayer force constant. The surface resonance modes evolve into localized 2D Ga modes as the phonon momentum increases. The predicted low-frequency modes are consistent with Raman measurements on 2D polar Ga.

Layer Number-Dependent Raman Spectra of γ-InSe

The two-dimensional layered semiconductor InSe, with its high carrier mobility, chemical stability, and strong charge transfer ability, plays a crucial role in optoelectronic devices. The number of InSe layers (L) has an important influence on its band structure and optoelectronic properties. Herein we present systematic investigations on few-layer (1L-7L) γ-InSe by optical contrast and Raman spectroscopy. We propose three quantified formulas to quickly identify the layer number using optical contrast, the frequency difference of two A₁ modes, and ultralow-frequency Raman spectroscopy, respectively. Moreover, angle-resolved polarization Raman spectra show that γ-InSe is isotropic in the a-b plane. Furthermore, using Raman mapping, we find that the relative strength of the low-frequency interlayer shear modes is particularly sensitive to the interaction between the sample and the substrate.

Formation of Graphene Nanoscrolls and Their Electronic Structures Based on Ab Initio Calculations

Rolling up two-dimensional (2D) materials can form quasi-one-dimensional nanoscrolls, which are expected to have novel properties due to their larger space of structural parameters. In this Letter, the structural dependence of formation energy was investigated based on more than 90 different graphene nanoscrolls (GNSs) through ab initio calculations. A quantified relationship between formation energy and structural parameters is discovered, which could provide universal description of rolling up 2D materials beyond graphene. Further calculations on electronic structures show the opening of bandgap in GNSs with ultrahigh carrier mobilities up to 10⁷ cm² V^-1 s^-1. The structural stability under room temperature was also testified by using molecular dynamic simulations. This work provides general insights into the rolling-up strategy and demonstrates the tunable properties of GNSs, thus extending the scope of the research field for 2D materials.

Fano resonance line shapes in the Raman spectra of tubulin and microtubules reveal quantum effects

Microtubules are self-assembling biological nanotubes made of the protein tubulin that are essential for cell motility, cell architecture, cell division, and intracellular trafficking. They demonstrate unique mechanical properties of high resilience and stiffness due to their quasi-crystalline helical structure. It has been theorized that this hollow molecular nanostructure may function like a quantum wire where optical transitions can take place, and photoinduced changes in microtubule architecture may be mediated via changes in disulfide or peptide bonds or stimulated by photoexcitation of tryptophan, tyrosine, or phenylalanine groups, resulting in subtle protein structural changes owing to alterations in aromatic flexibility. Here, we measured the Raman spectra of a microtubule and its constituent protein tubulin both in dry powdered form and in aqueous solution to determine if molecular bond vibrations show potential Fano resonances, which are indicative of quantum coupling between discrete phonon vibrational states and continuous excitonic many-body spectra. The key findings of this work are that we observed the Raman spectra of tubulin and microtubules and found line shapes characteristic of Fano resonances attributed to aromatic amino acids and disulfide bonds.

Understanding Heterogeneities in Quantum Materials

Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.

High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction

Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS₂ heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS₂ are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 10², showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.

Electronic Raman scattering in the 2D antiferromagnet NiPS3

Correlated-electron systems have long been an important platform for various interesting phenomena and fundamental questions in condensed matter physics. As a pivotal process in these systems, d-d transitions have been suggested as a key factor toward realizing optical spin control in two-dimensional (2D) magnets. However, it remains unclear how d-d excitations behave in quasi-2D systems with strong electronic correlation and spin-charge coupling. Here, we present a systematic electronic Raman spectroscopy investigation on d-d transitions in a 2D antiferromagnet—NiPS3, from bulk to atomically thin samples. Two electronic Raman modes originating from the scattering of incident photons with d electrons in Ni2+ ions are observed at ~1.0 eV. This electronic process persists down to trilayer flakes and exhibits insensitivity to the spin ordering of NiPS3. Our study demonstrates the utility of electronic Raman scattering in investigating the unique electronic structure and its coupling to magnetism in correlated 2D magnets.

In situ mass analysis of surface reactions using surface-enhanced Raman spectroscopy covering a wide range of frequencies

Both the structural change and mass change of adsorbates in heterogeneous surface reactions were simultaneously measured in situ using frequency-extended SERS spectroscopy.

Recent Advances in Fluorinated Graphene from Synthesis to Applications: Critical Review on Functional Chemistry and Structure Engineering

Fluorinated graphene (FG), as an emerging member of the graphene derivatives family, has attracted wide attention on account of its excellent performances and underlying applications. The introduction of a fluorine atom, with the strongest electronegativity (3.98), greatly changes the electron distribution of graphene, resulting in a series of unique variations in optical, electronic, magnetic, interfacial properties and so on. Herein, recent advances in the study of FG from synthesis to applications are introduced, and the relationship between its structure and properties is summarized in detail. Especially, the functional chemistry of FG has been thoroughly analyzed in recent years, which has opened a universal route for the functionalization and even multifunctionalization of FG toward various graphene derivatives, which further broadens its applications. Moreover, from a particular angle, the structure engineering of FG such as the distribution pattern of fluorine atoms and the regulation of interlayer structure when advanced nanotechnology gets involved is summarized. Notably, the elaborated structure engineering of FG is the key factor to optimize the corresponding properties for potential applications, and is also an up-to-date research hotspot and future development direction. Finally, perspectives and prospects for the problems and challenges in the study of FG are put forward.

A monoclinic semiorganic molecular crystal GUHP for terahertz photonics and optoelectronics

In this paper we describe the properties of the crystal of guanylurea hydrogen phosphite (NH\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2CNHCO(NH\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2)H\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document}2PO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_3$$\end{document}3 (GUHP) and propose its application in terahertz photonics and optoelectronics. GUHP crystal has a wide window of transparency and a high optical threshold in the visible and NIR spectral regions and narrow absorption bands in the terahertz frequency range. The spectral characteristics of absorption and refraction in the THz range were found to be strongly dependent on crystal temperature and orientation. Computer simulations made it possible to link the nature of the resonant response of the medium at THz frequencies with the molecular structure of the crystal, in particular, with intermolecular hydrogen bonds and the layered structure of the lattice. The possibility of application of the crystal under study for the conversion of femtosecond laser radiation from visible an NIR to terahertz range was demonstrated. It was shown that dispersion properties of the crystal allow the generation of narrow band terahertz radiation, whose spectral properties are determined by conditions close to phase matching. The properties of the generated terahertz radiation under various temperatures suggest the possibility of phonon mechanism of enhancement for nonlinear susceptibility of the second order.

Possible pair-graphene structures govern the thermodynamic properties of arbitrarily stacked few-layer graphene

The thermodynamic properties of few-layer graphene arbitrarily stacked on LiNbO3 crystal were characterized by measuring the parameters of a surface acoustic wave as it passed through the graphene/LiNbO3 interface. The parameters considered included the propagation velocity, frequency, and attenuation. Mono-, bi-, tri-, tetra-, and penta-layer graphene samples were prepared by transferring individual graphene layers onto LiNbO3 crystal surfaces at room temperature. Intra-layer lattice deformation was observed in all five samples. Further inter-layer lattice deformation was confirmed in samples with odd numbers of layers. The inter-layer lattice deformation caused stick-slip friction at the graphene/LiNbO3 interface near the temperature at which the layers were stacked. The thermal expansion coefficient of the deformed few-layer graphene transitioned from positive to negative as the number of layers increased. To explain the experimental results, we proposed a few-layer graphene even-odd layer number stacking order effect. A stable pair-graphene structure formed preferentially in the few-layer graphene. In even-layer graphene, the pair-graphene structure formed directly on the LiNbO3 substrate. Contrasting phenomena were noted with odd-layer graphene. Single-layer graphene was bound to the substrate after the stable pair-graphene structure was formed. The pair-graphene structure affected the stacking order and inter-layer lattice deformation of few-layer graphene substantially.

Coherent control of interlayer vibrations in Bi2Se3 van der Waals thin-films

Interlayer vibrations with discrete quantized modes in two-dimensional (2D) materials can be excited by ultrafast light due to the inherent low dimensionality and van der Waals force as a restoring force. Controlling such interlayer vibrations in layered materials, which are closely related to fundamental nanomechanical interactions and thermal transport, in spatial- and time-domain provides an in-depth understanding of condensed matters and potential applications for advanced phononic and photonics devices. The manipulation of interlayer vibrational modes has been implemented in a spatial domain through material design to develop novel optoelectronic and phononic devices with various 2D materials, but such control in a time domain is still lacking. We present an all-optical method for controlling the interlayer vibrations in a highly precise manner with Bi₂Se₃ as a promising optoelectronic and thermoelasticity material in layered structures using a coherently controlled pump and probe scheme. The observed thickness-dependent fast interlayer breathing modes and substrate-induced slow interfacial modes can be exactly explained by a modified linear chain model including coupling effect with substrate. In addition, the results of coherent control experiments also agree with the simulation results based on the interference of interlayer vibrations. This investigation is universally applicable for diverse 2D materials and provides insight into the interlayer vibration-related dynamics and novel device implementation based on an ultrafast timescale interlayer-spacing modulation scheme.

Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi2Se3 by X-ray Free-Electron Laser Diffraction

As a 3D topological insulator, bismuth selenide (Bi₂Se₃) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the subpicosecond regime. Here, we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi₂Se₃ thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theoretical calculations suggest that the band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast time scales.

Dissipation from Interlayer Friction in Graphene Nanoelectromechanical Resonators

A unique feature of two-dimensional (2D) materials is the ultralow friction at their van der Waals interfaces. A key question in a new generation of 2D heterostructure-based nanoelectromechanical systems (NEMS) is how the low friction interfaces will affect the dynamic performance. Here, we apply the exquisite sensitivity of graphene nanoelectromechanical drumhead resonators to compare the dissipation from monolayer, Bernal-stacked bilayer, and twisted bilayer graphene membranes. We find a significant difference in the average quality factors of three resonator types: 53 for monolayer, 40 for twisted and 31 for Bernal-stacked membranes. We model this difference as a combination of change in stiffness and additional dissipation from interlayer friction during motion. We find even the lowest frictions measured on sliding 2D interfaces are sufficient to alter dissipation in 2D NEMS. This model provides a generalized approach to quantify dissipation in NEMS based on 2D heterostructures which incorporate interlayer slip and friction.

Centimeter-Scale Few-Layer PdS2: Fabrication and Physical Properties

To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS₂ has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS₂ by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS₂ were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12-300 K. To further understand the electronic properties of the few-layer PdS₂, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS₂ materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm² V^-1 s^-1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS₂ was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.