Cleaning interfaces in layered materials heterostructures

Fourier-Tailored Light-Matter Coupling in van der Waals Heterostructures

Dielectric structures can support low-absorption optical modes, which are attractive for engineering light-matter interactions with excitonic resonances in two-dimensional (2D) materials. However, the coupling strength is often limited by the electromagnetic field being confined inside the dielectric, reducing the spatial overlap with the active excitonic material. Here, we demonstrate a scheme for enhanced light-matter coupling by embedding excitonic tungsten disulfide (WS2) within dielectric hexagonal boron nitride (hBN), forming a van der Waals (vdW) heterostructure that optimizes the field overlap and alignment between excitons and optical waveguide modes. To tailor diffractive coupling between free-space light and the waveguide modes in the vdW heterostructure, we fabricate Fourier surfaces in the top hBN layer by using thermal scanning-probe lithography and etching, producing sinusoidal topographic landscapes with nanometer precision. We observe the formation of exciton-polaritons with a Rabi splitting indicating that the system is at the onset of strong coupling. These results demonstrate the potential of Fourier-tailored vdW heterostructures for exploring advanced optoelectronic and quantum devices.

Tunable Exciton Modulation and Efficient Charge Transfer in MoS2/Graphene van der Waals Heterostructures

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors where the optical properties are dominated by strongly interacting electron-hole quasi-particles. Understanding the interactions among these quasi-particles is crucial for advancing optoelectronic applications. Here, we examine the electrical tunability of light emission from the A and B excitons in monolayer MoS2 and MoS2/graphene heterostructures and unravel the competition between the A exciton to trion formation and charge transfer processes. Our results show significant gate-tunable quenching of the photoluminescence intensity from A excitons with notable differences due to charge transfer in the heterostructure. Furthermore, we observe a distinct superlinear correlation between the A exciton photoluminescence intensity and high doping levels in MoS2, which continues until the density of photoexcited excitons exceeds and saturates the free carrier density. This phenomenon ceases to occur in MoS2/graphene, where MoS2 remains almost undoped across all values of the applied external voltage. In contrast, the B exciton photoluminescence is unaffected by doping in MoS2, while it decreases analogously to that of the A excitons in the MoS2/graphene heterostructure, indicating the relevance of gate-tunable charge transfer from hot electrons before any internal recombination.

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures

Van der Waals (vdW) magnetic materials have attracted considerable attention for use in spintronic devices such as those controlled by spin-orbit torque (SOT). Such SOT-driven devices are typically fabricated by bringing a vdW magnet in proximity to a spin-charge conversion layer to achieve current-driven magnetization switching. Here, we show that such structures fabricated with iron germanium telluride (FGT) and platinum can exhibit emergent magnetic properties, which we attribute to magnetic proximity effects at the FGT/Pt interface. These changes manifest as increased perpendicular magnetic anisotropy and the emergence of additional magnetization reversal steps as probed by magneto-transport, with the most significant changes appearing in thinner flakes. The behavior was found to be robust and consistently appeared in samples made with crystals from different vendors. Our results demonstrate the potential for engineering vdW spintronic systems through magnetic proximity effects.

Emergent Cavity Junction around Metal-on-Graphene Contacts

Harnessing graphene's electronic properties for practical applications requires a comprehensive understanding of its interfaces with metal contacts, which are essential for device integration. Traditionally, the metal-graphene (MG) interface has been considered straightforward, primarily affecting graphene's work function through doping mechanisms. However, as device dimensions shrink to the sub-micrometer scale, subtle interfacial phenomena become increasingly significant. Here, we investigate transport phenomena occurring at high-quality, sub-micrometer metal contacts on graphene. Through transport measurements, electrostatic simulations, and first-principles calculations, we demonstrate that the metal contact induces a localized n-doped radial cavity, defined cooperatively by the metal-induced electrostatic potential and Klein tunneling. This mechanism leads to quantized energy states and secondary resistance peaks as a function of graphene doping that decrease with increasing contact size. In the presence of a perpendicular magnetic field, the cavity hosts a distinct set of Landau levels, resulting in the formation of a secondary bulk interacting with the intrinsic graphene bulk. This interplay enables the direct observation of topological edge states arising from bulk-boundary correspondence. Our results provide an improved understanding of metal-graphene interfaces, highlighting fundamental properties of graphene relevant for graphene-based nanoelectronic devices.

Cost-Efficient Deterministic Engineering of Single Photon Emitters in Two-Dimensional Materials

Two-dimensional materials have recently emerged as promising candidates for quantum light emission. Their tunable bandgaps, layer-dependent excitonic properties, and strong confinement of charge carriers provide a versatile platform for manipulating and controlling quantum states. Several approaches─such as strain engineering, defect engineering and surface functionalization─have been explored to induce single-photon emitters in these materials. In this work, we present a practical and cost-efficient methodology for deterministic strain engineering of single-photon emitters within thin flakes of GaSe. Our approach utilizes optically active microparticles with a distinctive bipyramidal shape, whose emission does not interfere optically with that of GaSe. The results show strong agreement with previous studies on strain-induced single-photon sources in multilayer GaSe, demonstrating that the proposed technique is a promising platform for generating nonclassical light emission in layered materials. Compared to other local strain engineering techniques for single-photon sources in two-dimensional materials, our method offers greater accessibility and lower cost, making it feasible for implementation in most laboratories performing the experimental research in the field. This increased accessibility can help advance the understanding of two-dimensional semiconductor systems and their potential applications in nanophotonics and quantum light technologies.

Ultrafast Dynamics of Rydberg Excitons and Their Optically Induced Charged Complexes in Encapsulated WSe2 Monolayers

Quantum confinement and reduced dielectric screening lead to strong excitonic effects in atomically thin transition metal dichalcogenides (TMDs). Encapsulation of TMD monolayers in hexagonal boron nitride (hBN) unveils the excitonic Rydberg series below the free particle bandgap. The nonequilibrium response and the dynamics of these higher order exciton states and their multiparticle complexes remain almost unexplored. Here we use ultrafast pump-probe optical microscopy to measure the dynamics of excited-state (2s) excitons in hBN-encapsulated monolayer WSe2. 2s excitons form through an ultrafast relaxation process from high-energy states and exhibit longer decay dynamics than ground state excitons due to their higher spatial extension. We detect light-induced formation of 2s trions with significant oscillator strength and faster decay dynamics than 2s excitons, attributed to an intra-excitonic Auger effect causing an additional decay channel. Our results shed light on the dynamics of excited state excitons in TMDs and their interactions with free carriers.

Electromechanical Response of Saddle Points in Twisted hBN Moiré Superlattices

In twisted layered materials (t-LMs), an interlayer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental investigation of these features is still lacking. Here, we use piezo force microscopy to probe the electromechanical behavior of twisted hexagonal boron nitride (t-hBN). For parallel stacking alignment of t-hBN, we reveal very narrow (width ∼ 10 nm) saddle point in-plane polarizations, which we also measure in the antiparallel configuration. These localized polarizations can still be found on a multiply stacked t-hBN structure, determining the formation of a double moiré. Our findings imply that polarizations in t-hBN do not only point in the out-of-plane direction but also show an in-plane component, giving rise to a much more complex 3D polarization field.

Amorphous boron nitride: synthesis, properties and device application

Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies.

Gate-Tunable Dual-Mode Optoelectronic Device for Self-Powered Photodetector and Optoelectronic Synapse

In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate-tunable dual-mode optoelectronic device based on a MoTe2/MoS2 van der Waals heterostructure, designed to operate as both a self-powered photodetector and an optoelectronic synapse, is reported. The device leverages the photovoltaic effect in the MoTe2/MoS2 PN junction for self-powered photodetection and utilizes trapping states at the SiO2/MoS2 interface to emulate synaptic behavior. Gate voltage modulation enables precise control of the device's band structure, facilitating seamless switching between these two operational modes. The photodetector mode demonstrates broadband detection and fast response speed, while the optoelectronic synapse mode exhibits robust long-term memory characteristics, mimicking biological synaptic behavior. This dual functionality opens new possibilities for integrating neuromorphic computing into traditional optoelectronic systems, offering a potential pathway for developing advanced intelligent sensing and computing technologies.

Twist-Angle Controllable Transfer of 2D Materials via Water Vapor Intercalation

Transfer technique has become an indispensable process in the development of two-dimensional materials (2DMs) and their heterostructures, as it determines the quality of the interface and the performance of the resulting devices. However, how to flexibly and conveniently fabricate two-dimensional (2D) twisted heterostructures with high-quality interfaces has always been a formidable challenge. Here, a quasi-dry transfer technique assisted by water vapor intercalation (WVI) is developed, which can be flexibly used to fabricate twisted heterostructures. This method leverages a charged hydrophilic surface to facilitate WVI at the interface, enabling the clean and uniform detachment of 2DMs from the substrate. Using this method, the twisted monolayer/few-layer graphene and 2D quasicrystal-like WS2/MoS2, highlighting the surface/interface cleanness and angle-controlled transfer method is successfully fabricated. Besides, suspended structures of these 2DMs and heterostructures are fabricated, which offers substantial convenience for studying their intrinsic physical properties. Further, a high-performance hBN/graphene/hBN superlattice device with the mobility of ≈199,000 cm2 V-1 s-1 at room temperature is fabricated. This transfer technique ingeniously combines the advantages of dry transfer and wet transfer. Moreover, it features excellent scalability, providing crucial technical support for future research on the fundamental physical properties of 2DMs and the fabrication of quantum devices with outstanding performance.

Bottom-Up Fabrication of BN-Doped Graphene Electrodes from Thiol-Terminated Borazine Molecules Working in Solar Cells

Graphene exhibits exceptional properties, including high tensile strength, mechanical stiffness, and electron mobility. Chemical functionalization of graphene with boron and nitrogen is a powerful strategy for tuning these properties for specific applications. Molecular self-assembly provides an efficient pathway for the tailored synthesis of doped graphene, depending on the molecular precursor used. This study presents a scalable approach to synthesizing large-area boron- and nitrogen-doped graphene using two borazine precursors bearing thiol functionalities. After self-assembly on electropolished polycrystalline copper foil, the precursors undergo photopolymerization under UV irradiation, and subsequent annealing in vacuum transforms the cross-linked BN-doped layer into a graphenoid structure. X-ray photoelectron spectroscopy confirms the integration of the borazine rings into the BNC architecture, while Raman spectroscopy reveals a red shift in the characteristic G bands along with intense and broad D bands, highlighting boron-nitrogen contributions. Transmission electron microscopy provides insight into the morphology and structural quality of the BNC films. The BNC films were successfully integrated as counter electrodes in dye-sensitized solar cells, achieving a power conversion efficiency of up to 6% under 1 sun illumination and 11.8% under low-intensity indoor ambient light. Hence, this work not only establishes a straightforward, controllable route for heteroatom doping but also introduces a novel concept of Pt-free counter electrodes for efficient indoor energy harvesting applications.

Quantum Sensitive, Record Dynamic Range Terahertz Tunnel Field-Effect Transistor Detectors Exploiting Multilayer Graphene/hBN/Bilayer Graphene/hBN Heterostructures

Sensitive photodetectors showing large quantum efficiencies and broad dynamic ranges are essential components for on-chip integrated photonic quantum platforms and for probing quantum correlations in metrological sources. However, at terahertz (THz) frequencies, this is a very challenging task owing to the lack of high-absorption materials and thermal effects that impact their noise figure. Here, we develop antenna-coupled tunnel field-effect transistors, based on multilayer graphene/hBN/bilayer graphene/hBN that detect multiwavelength beams at frequencies ∼3 THz with record performances. We reach noise-equivalent powers of ∼10-12 WHz-1/2, a power dynamic range exceeding 5 orders of magnitude, limited by the maximum output power (0.8 mW) of the employed source, and a minimum detectable power at the nW-level, in a frequency-scalable device architecture. Our results open intriguing perspectives for the statistical analysis of quantum intensity correlations in nonclassical light sources operating in the underexploited THz frequency gap, between technologically mature domains (microwave, visible, near-infrared) that currently dominate the field of quantum technologies.

Metal-assisted vacuum transfer enabling in situ visualization of charge density waves in monolayer MoS2

Recent advancements in quantum materials research have focused on monolayer transition metal dichalcogenides and their heterostructures, known for complex electronic phenomena. While macroscopic electrical and magnetic measurements provide valuable insights, understanding these electronic states requires direct experimental observations. Yet, the extreme two-dimensionality of these materials demands surface-sensitive measurements with exceptionally clean surfaces. Here, we present the metal-assisted vacuum transfer method combined with in situ measurements in ultrahigh vacuum (UHV), enabling pristine monolayer MoS2 with ultraclean surfaces unexposed to ambient conditions. Consequently, in situ scanning tunneling microscopy revealed charge density waves (CDWs) in MoS2/Cu(111), previously unobserved in monolayer MoS2. Additionally, angle-resolved photoelectron spectroscopy identified notable Fermi surface nesting due to substrate interactions, elucidating the mechanisms behind CDW formation. This method is broadly applicable to other monolayer two-dimensional materials, enabling the high-fidelity in situ UHV characterization and advancing the understanding of correlated electronic behaviors in these material systems.

Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene

Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite notable advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum 'textures' of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization and recurring photocurrent patterns at integer filling factors of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies.

Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

Engineering the electronic band structure of two-dimensional (2D) materials by imposing spatially periodic superlattice (SL) potentials opens a pathway to unconventional electronics. Nanopatterning the gate electrode or surface dielectric near 2D crystals provides a powerful strategy for realizing electrostatically tunable "remote" SLs with flexibility in lattice design. Here, we demonstrate the effectiveness of block copolymer (BCP)-templated dielectric nanopatterns for fabricating etch-free high-grade metal oxide SLs. Alumina (AlOx) nanopatterns with hexagonal symmetry and a 38 nm SL wavelength are produced as a model material by directly converting a self-assembled BCP film via block-selective vapor phase infiltration. Despite micrometer-scale rotational disorder inherent to BCP self-assembly, electronic transport measurements of graphene reveal replica Dirac points at zero field and Hofstadter mini-gaps under finite magnetic fields. These results indicate the successful formation of remote SL potentials in graphene resulting from optimized AlOx nanopattern fabrication to achieve consistent lattice symmetry and periodicity at a macroscopic scale. The findings of this study, combined with the versatile, scalable, and cost-effective nature of BCP nanopatterning, highlight the potential of BCP-templated nanostructures for remote SL engineering in 2D crystals.

Coherent Detection of the Oscillating Acoustoelectric Effect in Graphene

In recent years, surface acoustic waves (SAWs) have emerged as a novel technique for generating quasiparticle transport and band modulation in condensed matter systems. SAWs interact with adjacent materials through piezoelectric and strain fields, dragging carriers in the direction of wave propagation. Most studies on the acoustoelectric effect have focused on the collective directional motion of carriers, which generates a steady electric potential difference, while the oscillating component from dynamic spatial charge modulation has remained challenging to probe. In this Letter, we report the coherent detection of the oscillating acoustoelectric effect in graphene. This is achieved through the coherent rectification of spatial-temporal charge oscillation with electromagnetic waves emitted by interdigital transducers. We systematically investigate the frequency and gate dependence of rectified signals and quantitatively probe the carrier redistribution dynamics driven by SAWs. The observation of the oscillating acoustoelectric effect provides direct access to the dynamic spatial charge modulation induced by SAWs through transport experiments.

Unexpected Large Electrostatic Gating by Pyroelectric Charge Accumulation

Pyroelectricity refers to the accumulation of charges due to changes in the spontaneous polarization of ferroelectric materials when subjected to temperature variations. Typically, these pyroelectric charges are considered unstable and dissipate quickly through interactions with the external environment. Consequently, the pyroelectric effect has been largely overlooked in ferroelectric field-effect transistors. In this work, we leverage the van der Waals interface of hBN to achieve a substantial and long-term electrostatic gating effect in graphene devices via the pyroelectric properties of a ferroelectric LiNbO3 substrate. Upon cooling, the polarization change in LiNbO3 induces high doping concentrations of up to 1013 cm-2 in the adjacent graphene. Through a combination of transport measurements and noncontact techniques, we demonstrate that the pyroelectric charge accumulation, as well as its enhancement in electric fields, are responsible for this unexpectedly high doping level. Our findings introduce a novel mechanism for voltage-free electrostatic gating control with long retention.

Forming and compliance-free operation of low-energy, fast-switching HfOxSy/HfS2 memristors

We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS2). Semiconductor-oxide heterostructures are achieved by low temperature (<300 °C) thermal oxidation of HfS2 under dry conditions, carefully controlling process parameters. The resulting HfOxSy/HfS2 heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an RON/ROFF of 102, programmable by 80 ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60 ns, < 20 pJ operation. This demonstrates the capability of these devices for low-energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150 °C over 104 s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated under vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfOx-based devices.

Breakdown of the Static Dielectric Screening Approximation of Coulomb Interactions in Atomically Thin Semiconductors

Coulomb interactions in atomically thin materials are remarkably sensitive to variations in the dielectric screening of the environment, which can be used to control exotic quantum many-body phases and engineer exciton potential landscapes. For decades, static or frequency-independent approximations of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, have been sufficient. These approximations were first applied to quantum wells and were more recently extended with initial success to layered transition metal dichalcogenides (TMDs). Here, we use charge-tunable exciton resonances to investigate screening effects in TMD monolayers embedded in materials with low-frequency dielectric constants ranging from 4 to more than 1000, a range of 2 orders of magnitude larger than in previous studies. In contrast to the redshift predicted by static models, we observe a blueshift of the exciton resonance exceeding 30 meV in higher dielectric constant environments. We explain our observations by introducing a dynamical screening model based on a solution to the Bethe-Salpeter equation (BSE). When dynamical effects are strong, we find that the exciton binding energy remains mostly controlled by the low-frequency dielectric response, while the exciton self-energy is dominated by the high-frequency one. Our results supplant the understanding of screening in layered materials and their heterostructures, introduce a knob to tune selected many-body effects, and reshape the framework for detecting and controlling correlated quantum many-body states and designing optoelectronic and quantum devices.

Direct View of Gate-Tunable Miniband Dispersion in Graphene Superlattices Near the Magic Twist Angle

Superlattices from twisted graphene mono- and bilayer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when an electric field is applied to vary the electron filling. Here, we gain direct access to the filling-dependent low-energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying microfocused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: the doping-dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body-related bandwidth change. In TDBG, on the other hand, we find a complex behavior of the low-energy bands, combining nonmonotonous bandwidth changes and tunable gap openings, which depend on the gate-induced displacement field. Our work establishes the extent of electric field tunability of the low-energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena.

Recent Advances in Two-Dimensional Ferromagnetic Materials-Based van der Waals Heterostructures

Two-dimensional (2D) ferromagnetic materials are subjects of intense research owing to their intriguing physicochemical properties, which hold great potential for fundamental research and spintronic applications. Specifically, 2D van der Waals (vdW) ferromagnetic materials retain both structural integrity and chemical stability even at the monolayer level. Moreover, due to their atomic thickness, these materials can be easily manipulated by stacking them with other 2D vdW ferroic and nonferroic materials, enabling precise control over their physical properties and expanding their functional applications. Consequently, 2D vdW ferromagnetic materials-based heterostructures offer a platform to tailor magnetic properties and explore advanced spintronic devices. This review aims to provide an overview of recent developments in emerging 2D vdW ferromagnetic materials-based heterostructures and devices. The fabrication approaches for 2D ferromagnetic vdW heterostructures are primarily summarized, followed by a review of two categories of heterostructures: ferromagnetic/ferroic and ferromagnetic/nonferroic vdW heterostructures. Subsequently, the progress made in modulating magnetic properties and emergence of various phenomena in these heterostructures is highlighted. Furthermore, the applications of such heterostructures in spintronic devices are discussed along with their future perspectives and potential directions in this exciting field.

Viscous terahertz photoconductivity of hydrodynamic electrons in graphene

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the bandgap enhances the number of charge carriers participating in transport. In superconductors and normal metals, the photoresistance is positive because of the destruction of the superconducting state and enhanced momentum-relaxing scattering, respectively. Here we report a qualitative deviation from the standard behaviour in doped metallic graphene. We show that Dirac electrons exposed to continuous-wave terahertz (THz) radiation can be thermally decoupled from the lattice, which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyse the dependencies of the negative photoresistance on the carrier density, and the radiation power, and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer, in principle, a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.

3D Crystal Construction by Single-Crystal 2D Material Supercell Multiplying

2D stacking presents a promising avenue for creating periodic superstructures that unveil novel physical phenomena. While extensive research has focused on lateral 2D material superstructures formed through composition modulation and twisted moiré structures, the exploration of vertical periodicity in 2D material superstructures remains limited. Although weak van der Waals interfaces enable layer-by-layer vertical stacking, traditional methods struggle to control in-plane crystal orientation over large areas, and the vertical dimension is constrained by unscalable, low-throughput processes, preventing the achievement of global order structures. In this study, a supercell multiplying approach is introduced that enables high-throughput construction of 3D superstructures on a macroscopic scale, utilizing artificially stacked single-crystalline 2D multilayers as foundational repeating units. By employing wafer-scale single-crystalline 2D materials and referencing the crystal orientation of substrates, the method ensures precise alignment of crystal orientation within and across each supercell, thereby achieving controllable periodicity along all three axes. A centimeter-scale 3R-MoS₂ crystal is successfully constructed, comprising over 200 monolayers of single-crystalline MoS₂, through a bottom-up stacking process. Additionally, the approach accommodates the integration of amorphous oxide, enabling the assembly of 3D non-linear optical crystals with quasi-phase matching. This method paves the way for the bottom-up construction of macroscopic artificial 3D crystals with atomic plane precision, enabling tailored optical, electrical, and thermal properties and advancing the development of novel artificial materials and high-performance applications.

Ultrafast Floquet engineering of Fermi-polaron resonances in charge-tunable monolayer WSe2 devices

Fermi polarons are emerging quasiparticles when a bosonic impurity immersed in a fermionic bath. Depending on the boson-fermion interaction strength, the Fermi-polaron resonances exhibit either attractive or repulsive interactions, which impose further experimental challenges on understanding the subtle light-driven dynamics. Here, we report the light-driven dynamics of attractive and repulsive Fermi polarons in monolayer WSe2 devices. Time-resolved polaron resonances are probed using femtosecond below-gap Floquet engineering with tunable exciton-Fermi sea interactions. While conventional optical Stark shifts are observed in the weak interaction regime, the resonance shift of attractive polarons increases, but that of repulsive polarons decreases with increasing the Fermi-sea density. A model Hamiltonian using Chevy ansatz suggests the off-resonant pump excitation influences the free carriers that interact with excitons in an opposite valley, thereby reducing the binding energy of attractive polarons. Our findings may enable coherent Floquet engineering of Bose-Fermi mixtures in ultrafast time scales.

Enhancing MoS2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts through Dielectric Screening

The high electrical contact resistance at the metal-semiconductor interface hinders the practical application of two-dimensional (2D) semiconductor electronics in the postsilicon era. Conventional strategies toward Ohmic contact involve optimizing contact electrode materials. In this work, we utilize the band structure tunability of a 2D semiconductor by introducing a high dielectric constant gate dielectric to optimize the Schottky barrier height and width. Here, the dielectric screening effect induced by a solid-state lithium-ion electrolyte significantly reduces the Schottky barrier height to 2.7 meV. The resulting MoS2 transistor achieves a subthreshold swing of 84 mV/dev and a drastically reduced contact resistance of 4.36 kΩ μm. The contact properties of the device under operational conditions are studied by in situ Kelvin probe force microscopy. Furthermore, the device demonstrates promising photodetection capabilities for visible and near-infrared light along with a fast response time. This work presents an approach to enhancing dielectric contacts in 2D semiconductors for advancing high-performance electronic and optoelectronic devices.

Cryogenic nano-imaging of second-order moiré superlattices

Second-order superlattices form when moiré superlattices with similar periodicities interfere with each other, leading to larger superlattice periodicities. These crystalline structures are engineered using two-dimensional materials such as graphene and hexagonal boron nitride, and the specific alignment plays a crucial role in facilitating correlation-driven topological phases. Signatures of second-order superlattices have been identified in magnetotransport experiments; however, real-space visualization is still lacking. Here we reveal the second-order superlattice in magic-angle twisted bilayer graphene closely aligned with hexagonal boron nitride through electronic transport measurements and cryogenic nanoscale photovoltage measurements and evidenced by long-range periodic photovoltage modulations. Our results show that even minuscule strain and twist-angle variations as small as 0.01° can lead to drastic changes in the second-order superlattice structure. Our real-space observations, therefore, serve as a 'magnifying glass' for strain and twist angle and can elucidate the mechanisms responsible for the breaking of spatial symmetries in twisted bilayer graphene.

A type-I van der Waals heterostructure formed by monolayer WS2 and trilayer PdSe2

Two-dimensional (2D) heterostructures, formed by stacking 2D semiconductors through the van der Waals force, have been extensively studied recently. However, the majority of the heterostructures discovered so far possess type-II interfaces that facilitate interlayer charge separation. Type-I interfaces, on the other hand, confine both electrons and holes in one layer, which is beneficial for optical applications that utilize electron-hole radiative recombination. So far, only a few type-I 2D heterostructures have been achieved, which has limited the construction of multilayer heterostructures with sophisticated band landscapes. Here, we report experimental evidence of a type-I interface between monolayer WS2 and trilayer PdSe2. Two-dimensional PdSe2 has emerged as a promising material for infrared optoelectronic and other applications. We fabricated the heterostructure by stacking an exfoliated monolayer WS2 flake on top of a trilayer PdSe2 film, synthesized by chemical vapor deposition. Photoluminescence spectroscopy measurements revealed that the WS2 exciton peak is significantly quenched in the heterostructure, confirming efficient excitation transfer from WS2 to PdSe2. Femtosecond transient absorption measurements with various pump/probe configurations showed that both electrons and holes photoexcited in the WS2 layer of the heterostructure can efficiently transfer to PdSe2, while neither type of carriers excited in PdSe2 can transfer to WS2. These experimental findings establish a type-I band alignment between monolayer WS2 and trilayer PdSe2. Our results further highlight PdSe2 as an important 2D material for constructing van der Waals heterostructures with emergent electronic and optoelectronic properties.

High-Fidelity Transfer of 2D Semiconductors and Electrodes for van der Waals Devices

As traditional silicon-based materials almost reach their limits in the post-Moore era, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been regarded as next-generation semiconductors for high-performance electrical and optical devices. Chemical vapor deposition (CVD) is a widely used technique for preparing large-area and high-quality TMDCs. Yet, it suffers from the challenge of transfer due to the strong interaction between 2D materials and substrates. The traditional PMMA-assisted wet etching method tends to induce damage, wrinkles, and inevitable polymer residues. In this work, we propose an etch-free and clean transfer method via a water intercalation strategy for TMDCs, ensuring a high-fidelity, wrinkle-free, and crack-free transfer with negligible residues. Furthermore, metal electrodes can also be transferred via this method and back-gate field-effect transistors (FETs) based on CVD-grown monolayer WSe2 with van der Waals (vdW) metal/semiconductor contacts are fabricated. Compared to the PMMA-assisted transfer method (∼1.2 cm2 V-1 s-1 hole mobility with ∼2 × 106 ON/OFF ratio), our high-fidelity transfer method significantly enhances the electrical performance of WSe2 FET over one order of magnitude, achieving a hole mobility of ∼43 cm2 V-1 s-1 and a high ON/OFF ratio of ∼5 × 107 in air at room temperature.

Viscoelastic-Support-Layer-Based Macroscopic Conformal Transfer of van der Waals Materials Compatible with Plasmonic Application

This study showcases the conformal geometries of van der Waals materials with metallic structures utilizing viscoelastic support layers. Mechanically exfoliated nanometer-thick graphite flakes were transferred onto metal structures with various side slopes using two different polymers: polycarbonate (PC) and polyethylene (PE). We proposed a morphology-based evaluation of the macroscale conformity that can contribute to the selection of a proper support layer. Although both support layers ensured high conformity on the sloped side, the PE layer offered superior conformity on the vertical metal structure. To further investigate the impact of conformal structures, we compared the terahertz transmission changes of a metal bowtie antenna before and after transferring graphite onto the bowtie gap for two distinct conformal structures. The conformity of graphite to the metal gap structure significantly influenced the optical response in the terahertz frequency regime. This suggests that the conformal structuring technique can be leveraged in various terahertz devices composed of metals and van der Waals materials, opening avenues for quantitative analysis in light-matter interactions.

Dry Transfer of van der Waals Junctions of Two-Dimensional Materials onto Patterned Substrates Using Plasticized Poly(vinyl chloride)/Kamaboko-Shaped Polydimethylsiloxane

Two-dimensional (2D) materials can be transferred onto substrates with various surface structures, opening up multiple functions and applications for 2D materials in the form of suspended membranes. In this paper, we present a method for transferring exfoliated 2D crystal flakes from SiO2 substrates onto patterned substrates using a poly(vinyl chloride) (PVC) layer mounted on a polydimethylsiloxane (PDMS) stamp structure. 2D crystal flakes can be transferred onto various patterned structures such as grooves, round holes, and periodic hole or groove patterns. Our method can also be used to fabricate suspended van der Waals (vdW) heterostructures by assembling 2D crystal flakes on the PVC/PDMS stamp and then transferring them onto patterned substrates. The adhesiveness and curvature of the PVC/PDMS stamp were tuned, and a high successful transfer rate was realized due to the use of kamaboko-shaped (semicylindrical) PDMS and the addition of an appropriate amount of a high-viscosity plasticizer to the PVC layer. Taking advantage of this method, we demonstrate the facile fabrication, simply by transferring a vdW heterostructure onto an Au-coated groove substrate, of a suspended vdW field-effect transistor device with the carrier density tuned using ionic gating. This method enables the transfer of 2D crystal flakes and vdW heterostructures onto various patterned substrates, and hence it should help to advance suspended 2D materials research.

Spin-valley locked excited states spectroscoy in a one-particle bilayer graphene quantum dot

Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust quantum number that can therefore be harnessed for this purpose. The simplest implementation of a valley qubit would rely on two states with opposite valleys as in the case of a single-carrier bilayer graphene quantum dot immersed in a small perpendicular magnetic field (B⊥ ≲ 100 mT). However, the single-carrier quantum dot excited states spectrum has not been resolved to date in the relevant magnetic field range. Here, we fill this gap, by measuring the parallel and perpendicular magnetic field dependence of this spectrum with an unprecedented resolution of 4 μeV. We use a time-resolved charge detection technique that gives us access to individual tunnel events. Our results come as a direct verification of the predicted spectrum and establish a new upper-bound on inter-valley mixing, equal to our energy resolution. Our charge detection technique opens the door to measuring the relaxation time of a valley qubit in a single-carrier bilayer graphene quantum dot.

Graphene Phase Modulators Operating in the Transparency Regime

Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimizing the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimized. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterized by the voltage required to achieve a π phase shift, Vπ, the device length, L, and their product, VπL. To reduce power consumption, IQ modulators are needed with <1 V drive voltages and compact (sub-cm) dimensions, which translate in VπL < 1Vcm. Si and LiNbO3 (LN) IQ modulators do not currently meet these requirements because VπL > 1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparency regime, where optical losses are minimized and remain constant with increasing voltage. Our device has VπL ∼ 0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss (∼5 dB), essential for IQ modulation. Our VπL is ∼5 times lower than the lowest thin-film LN MZMs and ∼3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible VπL (<1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by 1 order of magnitude.

Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V-1 s-1 on SiO2/Si and 105 cm2 V-1 s-1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/h-BN/WSe2 Junctions

Resonant tunneling diodes (RTDs) are a core technology in III-V semiconductor devices. The realization of high-performance RTD using two-dimensional (2D) materials has been long awaited, but it has yet to be accomplished. To this end, we investigate a range of WSe2/h-BN/WSe2 RTD devices by varying the number of layers of source and drain WSe2. The highest peak-to-valley ratio (PVR) is demonstrated in the three-layer (3L) WSe2/h-BN/1-layer (1L) WSe2 structure. The observed PVR values of 63.6 at 2 K and 16.2 at 300 K are the highest among the 2D material-based RTDs reported to date. Our results indicate the two key conditions to achieve high PVR: (1) resonant tunneling should occur between the Γ-point bands of the source and drain electrodes, and (2) the Γ-point bands contributing to the resonant tunneling should be energetically separated from the other bands. Our results provide an important step to outperform III-V semiconductor RTDs with 2D material-based RTDs.

On-chip phonon-enhanced IR near-field detection of molecular vibrations

Phonon polaritons - quasiparticles formed by strong coupling of infrared (IR) light with lattice vibrations in polar materials - can be utilized for surface-enhanced infrared absorption (SEIRA) spectroscopy and even for vibrational strong coupling with nanoscale amounts of molecules. Here, we introduce and demonstrate a compact on-chip phononic SEIRA spectroscopy platform, which is based on an h-BN/graphene/h-BN heterostructure on top of a metal split-gate creating a p-n junction in graphene. The metal split-gate concentrates the incident light and launches hyperbolic phonon polaritons (HPhPs) in the heterostructure, which serves simultaneously as SEIRA substrate and room-temperature infrared detector. When thin organic layers are deposited directly on top of the heterostructure, we observe a photocurrent encoding the layer's molecular vibrational fingerprint, which is strongly enhanced compared to that observed in standard far-field absorption spectroscopy. A detailed theoretical analysis supports our results, further predicting an additional sensitivity enhancement as the molecular layers approach deep subwavelength scales. Future on-chip integration of infrared light sources such as quantum cascade lasers or even electrical generation of the HPhPs could lead to fully on-chip phononic SEIRA sensors for molecular and gas sensing.

Control of Subband Energies via Interlayer Twisting in an Artificially Stacked WSe2 Bilayer

Tuning the electronic structure of artificially stacked bilayer crystals using their twist angle has attracted a significant amount of interest. In this study, resonant tunneling spectroscopy was performed on trilayer WSe2/h-BN/twisted bilayer (tBL) WSe2 devices with a wide range of twist angles (θBL) of tBL WSe2, from 0° to 34°. We observed two resonant tunneling peaks, identified as the first and second lowest hole subbands at the valence band Γ point of tBL WSe2. The subband separation, which directly measured the interlayer coupling strength, was tuned by ∼0.1 eV as θBL increased toward 6° and remained nearly constant for larger θBL values. The θBL dependence was attributed to the emergence of a stable W/Se (Se/W) stacking domain in the small θBL region, owing to the atomic reconstruction of the moiré lattice in tBL WSe2. Our findings demonstrate that the twist-controlled subband energies in tBL WSe2 are predominantly determined by local atomic reconstruction.

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Cryogenic field-effect transistors (FETs) offer great potential for applications, the most notable example being classical control electronics for quantum information processors. For the latter, on-chip FETs with low power consumption are crucial. This requires operating voltages in the millivolt range, which are only achievable in devices with ultrasteep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 μV/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van der Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.

Large Area Transfer of Bismuth-Based Layered Oxide Thin Films Using a Flexible Polymer Transfer Method

Magnetic and ferroelectric oxide thin films have long been studied for their applications in electronics, optics, and sensors. The properties of these oxide thin films are highly dependent on the film growth quality and conditions. To maximize the film quality, epitaxial oxide thin films are frequently grown on single-crystal oxide substrates such as strontium titanate (SrTiO3) and lanthanum aluminate (LaAlO3) to satisfy lattice matching and minimize defect formation. However, these single-crystal oxide substrates cannot readily be used in practical applications due to their high cost, limited availability, and small wafer sizes. One leading solution to this challenge is film transfer. In this demonstration, a material from a new class of multiferroic oxides is selected, namely bismuth-based layered oxides, for the transfer. A water-soluble sacrificial layer of Sr3Al2O6 is inserted between the oxide substrate and the film, enabling the release of the film from the original substrate onto a polymer support layer. The films are transferred onto new substrates of silicon and lithium niobate (LiNbO3) and the polymer layer is removed. These substrates allow for the future design of electronic and optical devices as well as sensors using this new group of multiferroic layered oxide films.

Four-channel graphene optical receiver

Silicon photonics with the advantages of low power consumption and low fabrication cost is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the SiGe photodetectors, supporting high-speed photodetection in wavelength bands beyond 1.6 μm on silicon. Here we realize a silicon-integrated four-channel wavelength division multiplexing (WDM) optical receiver based on a micro-ring resonator (MRR) array and four p-n homojunction GPDs. These photo-thermoelectric (PTE) GPDs exhibit zero-bias responsivities of ∼1.1 V W-1 and set-up limited 3 dB-bandwidth >67 GHz. The GPDs show good consistence benefiting from the compact active region array (0.006 mm2) covered by a single mechanically exfoliated hBN/graphene/hBN stack. Moreover, the WDM graphene optical receiver realized 4 × 16 Gbps non-return-to-zero optical signal transmission. To the best of our knowledge, it is the first GPD-array-based optical receiver using high-quality mechanically exfoliated graphene and edge graphene-metal contacts with low resistances. Apparently, our design is also compatible with CVD-grown graphene. This work sheds light on the large-scale integration of GPDs with high consistency and uniformity, enabling the application of high-quality mechanically exfoliated graphene, and promoting the development of the graphene photonic integrated circuits.

Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer

Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX2) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX2, an interlayer exciton can form, with the hole localised in one layer and the electron in the other. These interlayer excitons are long-lived, field-tunable, and can be trapped by moiré patterns formed at small twist angles between the layers. Here we demonstrate that emission from radiative recombination of interlayer excitons can be observed by cathodoluminescence from a WSe2/MoSe2heterobilayer encapsulated in hexagonal boron nitride. The higher spatial resolution of cathodoluminescence, compared to photoluminescence, allows detailed analysis of sample heterogeneity at the 100 s of nm lengthscales over which twist angles tend to vary in dry-transfer fabricated heterostructures.

Quantification of Two-Dimensional Interfaces: Quality of Heterostructures and What Is Inside a Nanobubble

Trapped materials at the interfaces of two-dimensional heterostructures (HS) lead to reduced coupling between the layers, resulting in degraded optoelectronic performance and device variability. Further, nanobubbles can form at the interface during transfer or after annealing. The question of what is inside a nanobubble, i.e., the trapped material, remains unanswered, limiting the studies and applications of these nanobubble systems. In this work, we report two key advances. First, we quantify the interface quality using RAW format optical imaging (unprocessed image data) and distinguish between ideal and non-ideal interfaces. The HS/substrate ratio value is calculated using a transfer matrix model and is able to detect the presence of trapped layers. The second key advance is the identification of water as the trapped material inside a nanobubble. To the best of our knowledge, this is the first study to show that optical imaging alone can quantify interface quality and find the type of trapped material inside spontaneously formed nanobubbles. We also define a quality index parameter to quantify the interface quality of HS. Quantitative measurement of the interface will help answer the question whether annealing is necessary during HS preparation and will enable creation of complex HS with small twist angles. Identification of the trapped materials will pave the way toward using nanobubbles for optical and engineering applications.

Interaction-Driven Quasi-Insulating Ground States of Gapped Electron-Doped Bilayer Graphene

Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and superconductivity. This Letter reports on a novel family of correlated phases characterized by spin and valley ordering, distinct from those reported previously. These phases emerge in electron-doped bilayer graphene where the energy bands are exceptionally flat, manifested through an intriguing nonlinear current-bias behavior that occurs at the onset of the phases and is accompanied by an insulating temperature dependence. These characteristics align with the presence of charge- or spin-density-wave states that open a gap on a portion of the Fermi surface or fully gapped Wigner crystals, resulting in an exceptionally intricate phase diagram.

Crossover between rigid and reconstructed moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with different twist angles

A moiré lattice in a twisted-bilayer transition metal dichalcogenide (tBL-TMD) exhibits a complex atomic reconstruction effect when its twist angle is less than a few degrees. The influence of the atomic reconstruction on material properties of the tBL-TMD has been of particular interest. In this study, we performed scanning transmission electron microscopy (STEM) imaging of a moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with various twist angles. Atomic-resolution imaging of the moiré lattice revealed a reconstructed moiré lattice below a crossover twist angle of ∼4° and a rigid moiré lattice above this angle. Our findings indicate that h-BN encapsulation has a considerable influence on lattice reconstruction, as the crossover twist angle was larger in h-BN-encapsulated devices compared to non-encapsulated devices. We believe that this difference is due to the improved flatness and uniformity of the twisted bilayers with h-BN encapsulation. Our results provide a foundation for a deeper understanding of the lattice reconstruction in twisted TMD materials with h-BN encapsulation.

Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging

Passive imaging for mid-wave infrared (MWIR) is resistant to atmospheric pollutants, guaranteeing image clarity and accuracy. Arrayed photodetectors can simultaneously perform radiation sensing to improve efficiency. Room temperature van der Waals (vdWs) photodetectors without lattice matching have evolved rapidly with optimized stacking methods, primarily for single-pixel devices. The urgent need to implement arrayed devices aligns with practical demands. Here, we present an 8 by 1 black phosphorus/molybdenum sulfide (BP/MoS2) vdWs photodetector linear array with a fill-factor of ~77%, fabricated using a temperature-assisted sloping transfer method. The flat interface and uniform thickness facilitate carrier transport and minimize pixel nonuniformities, showing an average peak detectivity (D*) of 2.34 × 109 cm·Hz1/2·W-1 in the mid-wave infrared region. Compared to a single pixel, push-broom scanning passive imaging is eight times more efficient and further enhanced through mean filtering and fast Fourier transform filtering for strip noise correction. Our study offers guidance on vdWs arrayed devices for engineering applications.

Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor

Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, lattice temperature, electron doping, and all-optical tuning of third-harmonic generation are combined in a hexagonal boron nitride-encapsulated graphene opto-electronic device and demonstrate up to 85% modulation depth along with gate-tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out-of-equilibrium chemical potential. The work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors, and frequency converters.

Field-Effect Thermoelectric Hotspot in Monolayer Graphene Transistor

Graphene is a promising candidate for the thermal management of downscaled microelectronic devices owing to its exceptional electrical and thermal properties. Nevertheless, a comprehensive understanding of the intricate electrical and thermal interconversions at a nanoscale, particularly in field-effect transistors with prevalent gate operations, remains elusive. In this study, nanothermometric imaging is used to examine a current-carrying monolayer graphene channel sandwiched between hexagonal boron nitride dielectrics. It is revealed for the first time that beyond the expected Joule heating, the thermoelectric Peltier effect actively plays a significant role in generating hotspots beneath the gated region. With gate-controlled charge redistribution and a shift in the Dirac point position, an unprecedented systematic evolution of thermoelectric hotspots, underscoring their remarkable tenability is demonstrated. This study reveals the field-effect Peltier contribution in a single graphene-material channel of transistors, offering valuable insights into field-effect thermoelectrics and future on-chip energy management.

Doping heteroatoms to form multiple hydrogen bond sites for enhanced interfacial reconstruction and separations

Interfacial challenges in unconventional oil extraction include heavy oil-water-solid multiphase separation and corrosion inhibition. Herein, a novel strategy based on interfacial hydrogen bonding reconstruction is proposed for constructing multifunctional interfacially active materials (MIAMs) to address multi-interfacial separation needs. A simple one-pot method is applied to successfully synthesize four different MIAM varieties, integrating site groups (-NH2, OSO, -COOH, and Si-O-Si) with multiple hydrogen bonds (HBs) into allyl polyether chains. The results indicate that all synthesized MIAMs excel in demulsification, detergency, and corrosion inhibition simultaneously, even at 25 °C. Their dehydration efficiency for different water-in-oil emulsions (even heavy oil emulsion) surpasses 99.9 % even at 16 °C, showing their excellent energy-saving potential for field applications. Furthermore, they demonstrate effective, nondestructive static cleaning (up to 86 %) of adhered oil from solid surfaces at 25 °C and provide corrosion inhibition effects (up to 92.09 %) on mild steel immersed in saturated brine. Mechanistic tests reveal that incorporating multiple HB sites in MIAMs dramatically enhances their effectiveness in interfacial separations. Based on these findings, an HB-dominated noncovalent interaction reconstruction strategy is tentatively proposed to develop advanced materials for low-carbon, efficient interfacial separations.

Electron wave and quantum optics in graphene

In the last decade, graphene has become an exciting platform for electron optical experiments, in some aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states,e.g., snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K-1 T-1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena.

Preparation and Modeling of Graphene Bubbles to Obtain Strain-Induced Pseudomagnetic Fields

It has been both theoretically predicted and experimentally demonstrated that strain can effectively modulate the electronic states of graphene sheets through the creation of a pseudomagnetic field (PMF). Pressurizing graphene sheets into bubble-like structures has been considered a viable approach for the strain engineering of PMFs. However, the bubbling technique currently faces limitations such as long manufacturing time, low durability, and challenges in precise control over the size and shape of the pressurized bubble. Here, we propose a rapid bubbling method based on an oxygen plasma chemical reaction to achieve rapid induction of out-of-plane deflections and in-plane strains in graphene sheets. We introduce a numerical scheme capable of accurately resolving the strain field and resulting PMFs within the pressurized graphene bubbles, even in cases where the bubble shape deviates from perfect spherical symmetry. The results provide not only insights into the strain engineering of PMFs in graphene but also a platform that may facilitate the exploration of the strain-mediated electronic behaviors of a variety of other 2D materials.