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Chen P, Zhang B, He E, Xiao Y, Liu F, Lin P, Wang Z, Pan G. Towards scalable memristive hardware for spiking neural networks. MATERIALS HORIZONS 2025; 12:2820-2839. [PMID: 39912868 DOI: 10.1039/d4mh01676a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2025]
Abstract
Spiking neural networks (SNNs) represent a promising frontier in artificial intelligence (AI), offering event-driven, energy-efficient computation that mimics rich neural dynamics in the brain. However, running large-scale SNNs on mainstream computing hardware faces significant challenges to efficiently emulate these dynamical processes using synchronized and logical chips. Memristor based systems have recently demonstrated great potential for AI acceleration, sparking speculations and explorations of using these emerging devices for SNN tasks. This paper reviews the promises and challenges of memristive devices in SNN implementations, and our discussions are focused on the scaling and integration of neuronal and synaptic devices. We survey recent progress in device and circuit development, discuss possible pathways for chip-level integration, and finally probe into hardware-oriented algorithm designs. This review offers a system-level perspective on implementing scalable memristor based SNN platforms.
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Affiliation(s)
- Peng Chen
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
- Nanhu Brain-Computer Interface Institute, Hangzhou, China
| | - Bihua Zhang
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
| | - Enhui He
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
- Nanhu Brain-Computer Interface Institute, Hangzhou, China
| | - Yu Xiao
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
| | - Fenghao Liu
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
| | - Peng Lin
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
- Nanhu Brain-Computer Interface Institute, Hangzhou, China
| | - Zhongrui Wang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, China.
| | - Gang Pan
- State Key Laboratory of Brain Machine Intelligence, College of Computer Science and Technology, Zhejiang University, Hangzhou, China.
- Liangzhu Laboratory, Zhejiang University, Hangzhou, China
- MOE Frontier Science Center for Brain Science and Brain-Machine Integration, Zhejiang University, Hangzhou, China
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2
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Zhu L, Li S, Zhang F, Wan X, Tan CL, Sun H, Yan S, Xu Y, Liu A, Yu Z. Bio-Inspired P-type TeSeO x Synaptic Transistor Based on Multispectral Sensing for Neuromorphic Visual Multilevel Nociceptor. SMALL METHODS 2025; 9:e2401543. [PMID: 39582277 DOI: 10.1002/smtd.202401543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2024] [Revised: 11/05/2024] [Indexed: 11/26/2024]
Abstract
The development of neuromorphic color vision has significant research implications in the fields of machine vision and artificial intelligence. By mimicking the processing mechanisms of energy-efficient biological visual systems, it offers a unique potential for real-time color environment perception and dynamic adaptability. This paper reports on a multispectral color sensing synaptic device based on a novel p-type TeSeOx transistor, applied to a neuromorphic visual multilevel nociceptor. Due to the intrinsic properties of TeSeOx, its narrow bandgap allows for multi-wavelength (405, 532, 655 nm) response, and its oxide semiconductor-based persistent photoconductivity converts optical signals into stored electrical signals, successfully emulating key synaptic characteristics such as excitatory postsynaptic current (EPSC), multi-pulse facilitation, and the transition from short-term to long-term memory. Additionally, it simulates learning, forgetting, and relearning behaviors, as well as image memory under tricolor light. Finally, using optical signals as a pain stimulus, the fundamental functions of a nociceptor are realized, including "threshold," "non-adaptation," "relaxation," and "nociceptive sensitization". More importantly, by using tricolor light, multilevel pain perception is acheived. These results have the potential to advance fields such as autonomous driving, machine vision, and intelligent alert systems.
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Affiliation(s)
- Li Zhu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Sixian Li
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Feng Zhang
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiang Wan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, 510535, China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, 510535, China
| | - Shancheng Yan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, 510535, China
| | - Ao Liu
- Institute of Fundamental and Frontier Sciences, State Key Laboratory of Electronic Thin Films and Integrated Devices, Key Laboratory of Quantum Physics and Photonic Quantum Information of the Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, 510535, China
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Li B, Lin N, Wang Z, Chen B, Lan C, Li X, Meng Y, Wang W, Ding M, Xie P, Zhang Y, Wu Z, Li D, Chen FR, Chan CH, Wang Z, Ho JC. Tunable Bipolar Photothermoelectric Response from Mott Activation for In-Sensor Image Preprocessing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2502915. [PMID: 40277185 DOI: 10.1002/adma.202502915] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2025] [Revised: 04/10/2025] [Indexed: 04/26/2025]
Abstract
In-sensor image preprocessing, a subset of edge computing, offers a solution to mitigate frequent analog-digital conversions and the von Neumann bottleneck in conventional digital hardware. However, an efficient in-sensor device array with large-scale integration capability for high-density and low-power sensory processing is still lacking and highly desirable. This work introduces an adjustable broadband photothermoelectric detector based on a phase-change vanadium dioxide thin-film transistor. This transistor employs a vanadium dioxide/gallium nitride three-terminal structure with a gate-tunable phase transition at the gate-source junctions. This design allows for modulable photothermoelectric responsivities and alteration of the short-circuit photocurrent's polarities. The devices exhibit linear gate dependence for the broadband photoresponse and linear light-intensity dependence for both positive and negative photoresponsivities. The device's energy consumption is as low as 8 pJ per spike, which is one order of magnitude lower than that of previous Mott materials-based in-sensor preprocessing devices. A wafer-scale bipolar phototransistor array has also been fabricated by standard micro-/nano-fabrication techniques, exhibiting excellent stability and endurance (over 5000 cycles). More importantly, an integrated in-sensor convolutional network is successfully designed for simultaneous broadband image classification, medical image denoising, and retinal vessel segmentation, delivering exceptional performance and paving the way for future smart edge sensors.
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Affiliation(s)
- Bowen Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Ning Lin
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Zhaowu Wang
- School of Science, Hebei University of Technology, Tianjin, 300401, P. R. China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Baojie Chen
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xiaocui Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Mingqi Ding
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Zenghui Wu
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Fu-Rong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Chi Hou Chan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
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Qiu J, Chen P, Wang M, Yang D, Cao J, Liu M, Yu J, Zhang X, Cheng H, Liu Q, Liu M. Compact Artificial Synapse-Neuron Module with Chemically Mediated Spiking Behaviors. ACS NANO 2025; 19:12298-12307. [PMID: 40114422 DOI: 10.1021/acsnano.5c01406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/22/2025]
Abstract
Neuromorphic electronic devices mimicking the structure and functionality of biological counterparts have shown promising applications in biorealistic computing and bioelectronic interfaces. However, current neuromorphic systems comprising synapses and neurons typically exhibit complex integrated structures and lack chemically mediated characteristics, hindering them from direct biointerfacing. Here, we report a compact artificial synapse-neuron module (ASNM) by seamlessly integrating an organic electrochemical synaptic transistor and a niobium dioxide Mott memristor, showing the chemically mediated synaptic plasticity and highly stable spiking characteristics (>1010 cycles). Sodium ions and dopamine neurotransmitter induce the short-term and long-term plasticity of synaptic transistors, respectively, thus enabling temporary and long-term modulation of the ASNM's firing frequency in a bioplausible range (0-100 Hz). Furthermore, we construct a chemically mediated artificial neuromuscular system based on the ASNM, which could replicate the learning processes of a shooting basketball. These results demonstrate that our ASNM could achieve multiple biorealistic functionalities including sensing, synaptic plasticity, and spiking in a compact structure, providing a promising way for direct biointerfacing.
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Affiliation(s)
- Jie Qiu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Zhangjiang Laboratory, Shanghai 201210, China
| | - Pei Chen
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Zhangjiang Laboratory, Shanghai 201210, China
| | - Ming Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- State Key Laboratory of Medical Neurobiology and MOE Frontiers Center for Brain Science, Fudan University, Shanghai 200433, China
| | - Dongzi Yang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jie Cao
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Mengyang Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jie Yu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xumeng Zhang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Hongfei Cheng
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Qi Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- Zhangjiang Laboratory, Shanghai 201210, China
| | - Ming Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- Zhangjiang Laboratory, Shanghai 201210, China
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Huang YT, Li Z, Yuan C, Zhu YC, Zhao WW, Xu JJ. Organic Photoelectrochemical Multisensory Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2503030. [PMID: 40099588 DOI: 10.1002/adma.202503030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2025] [Indexed: 03/20/2025]
Abstract
Neuromorphic perception capable of multisensory integration (MSI) in electrolytes is important but remains challenging. Here, the aqueous implementation of artificial MSI is reported based on the newly emerged organic photoelectrochemical transistor (OPECT) by representative visual (light)-gustatory (sour) perception. Under the co-modulation of light and H+/OH-, multisensory synaptic plasticity and several typical MSI characteristics are mimicked, including "super-additive response," "inverse effectiveness effect" and "temporal congruency." To demonstrate its potential usage, different types of multisensory associative learning and corresponding reflex activities are further emulated. The chemical MSI system is also utilized to control artificial salivation by a closed loop of real-time perception, processing, integration, and actuation to emulate the biological responses toward external stimuli. In contrast to previous solid-state operations, this work offers a new strategy for developing neuromorphic MSI in aqueous environments that are analogous to those in biology.
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Affiliation(s)
- Yu-Ting Huang
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Zheng Li
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Cheng Yuan
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Yuan-Cheng Zhu
- State Key Laboratory of Pharmaceutical Biotechnology, School of Life Sciences, Nanjing University, Nanjing, 210023, China
| | - Wei-Wei Zhao
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Jing-Juan Xu
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
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Zhang M, Xu G, Zhang H, Xiao K. Nanofluidic Volatile Threshold Switching Ionic Memristor: A Perspective. ACS NANO 2025; 19:10589-10598. [PMID: 40084780 DOI: 10.1021/acsnano.4c17760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/16/2025]
Abstract
The fast development of artificial intelligence and big data drives the exploration of low-power computing hardware. Neuromorphic devices represented by memristors may provide a possible computing paradigm beyond von Neumann's architecture because they enable the integration of processing and storage units by mimicking how the brain processes complex information in parallel. In the brain, information is processed via multilevel spiking coding and event-driven mechanisms, whose simplified neural circuit is represented by the leaky-integration-and-fire model combining volatile threshold switching memristors and capacitors. As a computing unit to emulate the working environment and explore the unique functions of ions and molecules of biological systems, nanofluidic volatile threshold switching ionic memristors become essential but are still missing. This Perspective will review the mechanism and role of threshold switching memristors as a building block for neuromorphic computing and list three possible routes for nanofluidic ones.
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Affiliation(s)
- Miliang Zhang
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Guoheng Xu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Hongjie Zhang
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Kai Xiao
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
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Lin PL, Liao ZS, Chen SM, Chen JS. Achieving neuronal dynamics with spike encoding and spatial-temporal summation in vanadium-based threshold switching memristor for asynchronous signal integration. NANOSCALE HORIZONS 2025; 10:379-387. [PMID: 39660392 DOI: 10.1039/d4nh00484a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2024]
Abstract
Artificial neuronal devices that emulate the dynamics of biological neurons are pivotal for advancing brain emulation and developing bio-inspired electronic systems. This paper presents the design and demonstration of an artificial neuron circuit based on a Pt/V/AlOx/Pt threshold switching memristor (TSM) integrated with an external resistor. By applying voltage pulses, we successfully exhibit the leaky integrate-and-fire (LIF) behavior, as well as both spatial and spatiotemporal summation capabilities, achieving the asynchronous signal integration. Notably, the Pt/V/AlOx/Pt TSM demonstrates ultrafast switching speeds (on/off times ∼165 ns/310 ns) and remarkable stability (endurance >102 cycles with cycle-to-cycle variations <2.5%). These attributes render the circuit highly suitable as a spike generator in neuromorphic computing applications. The Pt/V/AlOx/Pt TSM-based spike encoder can output current spikes at frequencies ranging from approximately 200 kHz to 800 kHz. The modulation of output spike frequency is achievable by adjusting the external resistor and capacitor within the spike encoder circuit, providing considerable operational flexibility. Additionally, the Pt/V/AlOx/Pt TSM boasts a lower threshold voltage (Vth ∼ 0.84 V) compared to previously reported VOx-based TSMs, leading to significantly reduced energy consumption for spike generation (∼2.75 nJ per spike).
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Affiliation(s)
- Pei-Lin Lin
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Zih-Siao Liao
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Shuai-Ming Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
- Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
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Liu C, Li X, Wang Y, Zheng Z, Wu B, He W, Dong X, Zhang Z, Chen B, Huang J, An Z, Zheng C, Huang G, Mei Y. Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer. Nat Commun 2025; 16:150. [PMID: 39747045 PMCID: PMC11696154 DOI: 10.1038/s41467-024-55402-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2024] [Accepted: 12/11/2024] [Indexed: 01/04/2025] Open
Abstract
The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO2) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation. By removing the amorphous interlayer, a 4-inch wafer-scale freestanding VO2 nanomembrane can be obtained, exhibiting intact crystalline structure and physical properties. In addition, multi-shaped freestanding infrared bolometers are fabricated based on the epitaxial VO2 nanomembranes, showing high detectivity and low current noise. Our strategy provides a promising way to explore various freestanding heteroepitaxial oxide materials for future large-scale integrated circuits and functional devices.
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Affiliation(s)
- Chang Liu
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Xing Li
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Yang Wang
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Zhi Zheng
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Binmin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Wenhao He
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Xiang Dong
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Ziyu Zhang
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Bingxin Chen
- State Key Laboratory of Surface Physics & Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai, 200438, People's Republic of China
| | - Jiayuan Huang
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Zhenghua An
- State Key Laboratory of Surface Physics & Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai, 200438, People's Republic of China
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Gaoshan Huang
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China
| | - Yongfeng Mei
- Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China.
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, People's Republic of China.
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, People's Republic of China.
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Boahen EK, Kweon H, Oh H, Kim JH, Lim H, Kim DH. Bio-Inspired Neuromorphic Sensory Systems from Intelligent Perception to Nervetronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025; 12:e2409568. [PMID: 39527666 PMCID: PMC11714237 DOI: 10.1002/advs.202409568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2024] [Revised: 10/30/2024] [Indexed: 11/16/2024]
Abstract
Inspired by the extensive signal processing capabilities of the human nervous system, neuromorphic artificial sensory systems have emerged as a pivotal technology in advancing brain-like computing for applications in humanoid robotics, prosthetics, and wearable technologies. These systems mimic the functionalities of the central and peripheral nervous systems through the integration of sensory synaptic devices and neural network algorithms, enabling external stimuli to be converted into actionable electrical signals. This review delves into the intricate relationship between synaptic device technologies and neural network processing algorithms, highlighting their mutual influence on artificial intelligence capabilities. This study explores the latest advancements in artificial synaptic properties triggered by various stimuli, including optical, auditory, mechanical, and chemical inputs, and their subsequent processing through artificial neural networks for applications in image recognition and multimodal pattern recognition. The discussion extends to the emulation of biological perception via artificial synapses and concludes with future perspectives and challenges in neuromorphic system development, emphasizing the need for a deeper understanding of neural network processing to innovate and refine these complex systems.
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Affiliation(s)
- Elvis K. Boahen
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Hyukmin Kweon
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
- Present address:
Department of Chemical EngineeringStanford UniversityStanfordCA94305USA
| | - Hayoung Oh
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Ji Hong Kim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Hayoung Lim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Do Hwan Kim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
- Institute of Nano Science and TechnologyHanyang UniversitySeoul04763Republic of Korea
- Clean‐Energy Research InstituteHanyang UniversitySeoul04763Republic of Korea
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10
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Kim Y, Baek JH, Im IH, Lee DH, Park MH, Jang HW. Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration. ACS NANO 2024; 18:34531-34571. [PMID: 39665280 DOI: 10.1021/acsnano.4c12884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2024]
Abstract
The ever-increasing volume of complex data poses significant challenges to conventional sequential global processing methods, highlighting their inherent limitations. This computational burden has catalyzed interest in neuromorphic computing, particularly within artificial neural networks (ANNs). In pursuit of advancing neuromorphic hardware, researchers are focusing on developing computation strategies and constructing high-density crossbar arrays utilizing history-dependent, multistate nonvolatile memories tailored for multiply-accumulate (MAC) operations. However, the real-time collection and processing of massive, dynamic data sets require an innovative computational paradigm akin to that of the human brain. Spiking neural networks (SNNs), representing the third generation of ANNs, are emerging as a promising solution for real-time spatiotemporal information processing due to their event-based spatiotemporal capabilities. The ideal hardware supporting SNN operations comprises artificial neurons, artificial synapses, and their integrated arrays. Currently, the structural complexity of SNNs and spike-based methodologies requires hardware components with biomimetic behaviors that are distinct from those of conventional memristors used in deep neural networks. These distinctive characteristics required for neuron and synapses devices pose significant challenges. Developing effective building blocks for SNNs, therefore, necessitates leveraging the intrinsic properties of the materials constituting each unit and overcoming the integration barriers. This review focuses on the progress toward memristor-based spiking neural network neuromorphic hardware, emphasizing the role of individual components such as memristor-based neurons, synapses, and array integration along with relevant biological insights. We aim to provide valuable perspectives to researchers working on the next generation of brain-like computing systems based on these foundational elements.
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Affiliation(s)
- Youngmin Kim
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Ji Hyun Baek
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - In Hyuk Im
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Min Hyuk Park
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
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11
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Ding G, Li H, Zhao J, Zhou K, Zhai Y, Lv Z, Zhang M, Yan Y, Han ST, Zhou Y. Nanomaterials for Flexible Neuromorphics. Chem Rev 2024; 124:12738-12843. [PMID: 39499851 DOI: 10.1021/acs.chemrev.4c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
The quest to imbue machines with intelligence akin to that of humans, through the development of adaptable neuromorphic devices and the creation of artificial neural systems, has long stood as a pivotal goal in both scientific inquiry and industrial advancement. Recent advancements in flexible neuromorphic electronics primarily rely on nanomaterials and polymers owing to their inherent uniformity, superior mechanical and electrical capabilities, and versatile functionalities. However, this field is still in its nascent stage, necessitating continuous efforts in materials innovation and device/system design. Therefore, it is imperative to conduct an extensive and comprehensive analysis to summarize current progress. This review highlights the advancements and applications of flexible neuromorphics, involving inorganic nanomaterials (zero-/one-/two-dimensional, and heterostructure), carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, and polymers. Additionally, a comprehensive comparison and summary of the structural compositions, design strategies, key performance, and significant applications of these devices are provided. Furthermore, the challenges and future directions pertaining to materials/devices/systems associated with flexible neuromorphics are also addressed. The aim of this review is to shed light on the rapidly growing field of flexible neuromorphics, attract experts from diverse disciplines (e.g., electronics, materials science, neurobiology), and foster further innovation for its accelerated development.
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Affiliation(s)
- Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, PR China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong SAR PR China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
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12
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Zhong S, Su L, Xu M, Loke D, Yu B, Zhang Y, Zhao R. Recent Advances in Artificial Sensory Neurons: Biological Fundamentals, Devices, Applications, and Challenges. NANO-MICRO LETTERS 2024; 17:61. [PMID: 39537845 PMCID: PMC11561216 DOI: 10.1007/s40820-024-01550-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Accepted: 09/28/2024] [Indexed: 11/16/2024]
Abstract
Spike-based neural networks, which use spikes or action potentials to represent information, have gained a lot of attention because of their high energy efficiency and low power consumption. To fully leverage its advantages, converting the external analog signals to spikes is an essential prerequisite. Conventional approaches including analog-to-digital converters or ring oscillators, and sensors suffer from high power and area costs. Recent efforts are devoted to constructing artificial sensory neurons based on emerging devices inspired by the biological sensory system. They can simultaneously perform sensing and spike conversion, overcoming the deficiencies of traditional sensory systems. This review summarizes and benchmarks the recent progress of artificial sensory neurons. It starts with the presentation of various mechanisms of biological signal transduction, followed by the systematic introduction of the emerging devices employed for artificial sensory neurons. Furthermore, the implementations with different perceptual capabilities are briefly outlined and the key metrics and potential applications are also provided. Finally, we highlight the challenges and perspectives for the future development of artificial sensory neurons.
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Affiliation(s)
- Shuai Zhong
- Guangdong Institute of Intelligence Science and Technology, Hengqin, Zhuhai, 519031, People's Republic of China.
| | - Lirou Su
- Guangdong Institute of Intelligence Science and Technology, Hengqin, Zhuhai, 519031, People's Republic of China
| | - Mingkun Xu
- Guangdong Institute of Intelligence Science and Technology, Hengqin, Zhuhai, 519031, People's Republic of China
| | - Desmond Loke
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Bin Yu
- College of Integrated Circuits, Zhejiang University, Hangzhou, 3112000, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 310027, People's Republic of China
| | - Yishu Zhang
- College of Integrated Circuits, Zhejiang University, Hangzhou, 3112000, People's Republic of China.
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 310027, People's Republic of China.
| | - Rong Zhao
- Department of Precision Instruments, Tsinghua University, Beijing, 100084, People's Republic of China
- Center for Brain-Inspired Computing Research, Tsinghua University, Beijing, 100084, People's Republic of China
- IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, 100084, People's Republic of China
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Yang C, Wang H, Zhou G, Zhao H, Hou W, Zhu S, Zhao Y, Sun B. A Multimodal Perception-Enabled Flexible Memristor with Combined Sensing-Storage-Memory Functions for Enhanced Artificial Injury Recognition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402588. [PMID: 39058216 DOI: 10.1002/smll.202402588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 07/07/2024] [Indexed: 07/28/2024]
Abstract
With the continuous advancement of wearable technology and advanced medical monitoring, there is an increasing demand for electronic devices that can adapt to complex environments and have high perceptual sensitivity. Here, a novel artificial injury perception device based on an Ag/HfOx/ITO/PET flexible memristor is designed to address the limitations of current technologies in multimodal perception and environmental adaptability. The memristor exhibits excellent resistive switching (RS) performance and mechanical flexibility under different bending angles (BAs), temperatures, humid environment, and repetitive folding conditions. Further, the device demonstrates the multimodal perception and conversion capabilities toward voltage, mechanical, and thermal stimuli through current response tests under different conditions, enabling not only the simulation of artificial injury perception but also holds promise for monitoring and controlling the movement of robotic arms. Moreover, the logical operation capability of the memristor-based reconfigurable logic (MRL) gates is also demonstrated, proving the device has great potential applications with sensing, storage, and memory functions. Overall, this study not only provides a direction for the development of the next-generation flexible multimodal sensors, but also has significant implications for technological advancements in many fields such as robotic arms, electronic skin (e-skin), and medical monitoring.
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Affiliation(s)
- Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-Inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Wentao Hou
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou, 310023, China
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
- Micro-and Nano-Technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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14
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Sinha A, Lee J, Kim J, So H. An evaluation of recent advancements in biological sensory organ-inspired neuromorphically tuned biomimetic devices. MATERIALS HORIZONS 2024; 11:5181-5208. [PMID: 39114942 DOI: 10.1039/d4mh00522h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2024]
Abstract
In the field of neuroscience, significant progress has been made regarding how the brain processes information. Unlike computer processors, the brain comprises neurons and synapses instead of memory blocks and transistors. Despite advancements in artificial neural networks, a complete understanding concerning brain functions remains elusive. For example, to achieve more accurate neuron replication, we must better understand signal transmission during synaptic processes, neural network tunability, and the creation of nanodevices featuring neurons and synapses. This study discusses the latest algorithms utilized in neuromorphic systems, the production of synaptic devices, differences between single and multisensory gadgets, recent advances in multisensory devices, and the promising research opportunities available in this field. We also explored the ability of an artificial synaptic device to mimic biological neural systems across diverse applications. Despite existing challenges, neuroscience-based computing technology holds promise for attracting scientists seeking to enhance solutions and augment the capabilities of neuromorphic devices, thereby fostering future breakthroughs in algorithms and the widespread application of cutting-edge technologies.
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Affiliation(s)
- Animesh Sinha
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
| | - Jihun Lee
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
| | - Junho Kim
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
| | - Hongyun So
- Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, South Korea.
- Institute of Nano Science and Technology, Hanyang University, Seoul 04763, South Korea
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Han CY, Zhao S, Fang SL, Liu W, Tang WM, Lai PT, Li C, Ma YX, Song JQ, Li X, Wang XL, Ren WJ, Wang RL, Huang XD, Zhang GH, Geng L. A Flexible Artificial Spiking Photoreceptor Enabled by a Single VO 2 Mott Memristor for the Spike-Based Electronic Retina. ACS APPLIED MATERIALS & INTERFACES 2024; 16:57404-57411. [PMID: 39380467 DOI: 10.1021/acsami.4c12874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2024]
Abstract
The neuromorphic vision system that utilizes spikes as information carriers is crucial for the formation of spiking neural networks. Here, we present a bioinspired flexible artificial spiking photoreceptor (ASP), which is realized by using a single VO2 Mott memristor that can simultaneously sense and encode the stimulus light into spikes. The ASP has high spike-encoded photosensitivity and ultrawide photosensing range (405-808 nm) with good endurance (>7 × 107) and high flexibility (bending radius ∼5 mm). Then, we put forward an all-spike electronic retina architecture that comprises one layer of ASPs and one layer of artificial optical nerves (AONs) to process the spike information. Each AON consists of a single Mott memristor connected in series with a neuro-transistor that is a multiple-input floating-gate MOS transistor. Simulation results demonstrate that the all-spike electronic retina can successfully segment images with high Shannon entropy, thus laying the foundation for the development of a spike-based neuromorphic vision system.
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Affiliation(s)
- Chuan Yu Han
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Shujing Zhao
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Sheng Li Fang
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Weihua Liu
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Wing Man Tang
- The Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 999077, P.R. China
| | - Peter To Lai
- The Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 999077, P.R. China
| | - Can Li
- The Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 999077, P.R. China
| | - Yuan Xiao Ma
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jia Qi Song
- Physics Teaching and Experiment Center, Shenzhen Technology University, Shenzhen 518118, P.R. China
| | - Xin Li
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Xiao Li Wang
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Wen Jun Ren
- PE Department, Xi' an Jiaotong University, Xi'an 710049, China
| | - Rui Lin Wang
- PE Department, Xi' an Jiaotong University, Xi'an 710049, China
| | - Xiao Dong Huang
- Key Laboratory of MEMS of the Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 211189, China
| | - Guo He Zhang
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Li Geng
- School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, P.R. China
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16
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Moon T, Soh K, Kim JS, Kim JE, Chun SY, Cho K, Yang JJ, Yoon JH. Leveraging volatile memristors in neuromorphic computing: from materials to system implementation. MATERIALS HORIZONS 2024; 11:4840-4866. [PMID: 39189179 DOI: 10.1039/d4mh00675e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Inspired by the functions of biological neural networks, volatile memristors are essential for implementing neuromorphic computing. These devices enable large-scale and energy-efficient data processing by emulating neural functionalities through dynamic resistance changes. The threshold switching characteristics of volatile memristors, which are driven by various mechanisms in materials ranging from oxides to chalcogenides, make them versatile and suitable for neuromorphic computing systems. Understanding these mechanisms and selecting appropriate devices for specific applications are crucial for optimizing the performance. However, the existing literature lacks a comprehensive review of switching mechanisms, their compatibility with different applications, and a deeper exploration of the spatiotemporal processing capabilities and inherent stochasticity of volatile memristors. This review begins with a detailed analysis of the operational principles and material characteristics of volatile memristors. Their diverse applications are then explored, emphasizing their role in crossbar arrays, artificial receptors, and neurons. Furthermore, the potential of volatile memristors in artificial inference systems and reservoir computing is discussed, due to their spatiotemporal processing capabilities. Hardware security applications and probabilistic computing are also examined, where the inherent stochasticity of the devices can improve the system robustness and adaptability. To conclude, the suitability of different switching mechanisms for various applications is evaluated, and future perspectives for the development and implementation of volatile memristors are presented. This review aims to fill the gaps in existing research and highlight the potential of volatile memristors to drive innovation in neuromorphic computing, paving the way for more efficient and powerful computational paradigms.
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Affiliation(s)
- Taehwan Moon
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Keunho Soh
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 02791, Republic of Korea
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Jong Sung Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 02791, Republic of Korea
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility (SEIF), Korea Institute of Science and Technology (KIST), Seoul 02791, Republic of Korea
| | - Ji Eun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 02791, Republic of Korea
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Suk Yeop Chun
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 02791, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Republic of Korea
| | - Kyungjune Cho
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility (SEIF), Korea Institute of Science and Technology (KIST), Seoul 02791, Republic of Korea
| | - J Joshua Yang
- Electrical and Computer Engineering, University of Southern California, LA 90089, USA.
| | - Jung Ho Yoon
- School of Advanced Materials and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
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Li P, Song H, Sa Z, Liu F, Wang M, Wang G, Wan J, Zang Z, Jiang J, Yang ZX. Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems. MATERIALS HORIZONS 2024; 11:4979-4986. [PMID: 39072692 DOI: 10.1039/d4mh00396a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/30/2024]
Abstract
Due to their persistent photoconductivity, amorphous metal oxide thin films are promising for construction of artificial visual systems. In this work, large-scale, uniformly distributed amorphous InGaO thin films with an adjustable In/Ga ratio and thickness are prepared successfully by a low-cost environmentally friendly and easy-to-handle solution process for constructing artificial visual systems. With the increase of the In/Ga ratio and film thickness, the number of oxygen vacancies increases, along with the increase of post-synaptic current triggered by illumination, benefiting the transition of short-term plasticity to long-term plasticity. With an optimal In/Ga ratio and film thickness, the conductance response difference at a decay of 0 s between the 1st and the 10th views of a 5 × 5 array InGaO thin film transistor is up to 2.88 μA, along with an increase in the Idecay 30s/Idecay 0s ratio from 45.24% to 53.24%, resulting in a high image clarity and non-volatile artificial visual memory. Furthermore, a three-layer artificial vision network is constructed to evaluate the image recognition capability, exhibiting an accuracy of up to 91.32%. All results promise low-cost and easy-to-handle amorphous InGaO thin films for future visual information processing and image recognition.
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Affiliation(s)
- Pengsheng Li
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Honglin Song
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410082, China.
| | - Zixu Sa
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Fengjing Liu
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Mingxu Wang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Guangcan Wang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Junchen Wan
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Zeqi Zang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410082, China.
| | - Zai-Xing Yang
- School of Physics, Shandong University, Jinan 2510100, China.
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Wang B, Shi Y, Li H, Hua Q, Ji K, Dong Z, Cui Z, Huang T, Chen Z, Wei R, Hu W, Shen G. Body-Integrated Ultrasensitive All-Textile Pressure Sensors for Skin-Inspired Artificial Sensory Systems. SMALL SCIENCE 2024; 4:2400026. [PMID: 40212071 PMCID: PMC11935259 DOI: 10.1002/smsc.202400026] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 06/11/2024] [Indexed: 04/13/2025] Open
Abstract
Tactile sensing plays a vital role in human somatosensory perception as it provides essential touch information necessary for interacting with the environment and accomplishing daily tasks. The progress in textile electronics has opened up opportunities for developing intelligent wearable devices that enable somatosensory perception and interaction. Herein, a skin-inspired all-textile pressure sensor (ATP) is presented that emulates the sensing and interaction functions of human skin, offering wearability, comfort, and breathability. The ATP demonstrates impressive features, including ultrahigh sensitivity (1.46 × 106 kPa-1), fast response time (1 ms), excellent stability and durability (over 2000 compression-release cycles), a low detection limit of 10 Pa, and remarkable breathability (93.2%). The multipixel array of ATPs has been proven to facilitate static and dynamic mapping of spatial pressure, as well as pressure trajectory monitoring functions. Moreover, by integrating ATP with oscillation circuits, external force stimuli can be directly encoded into digital frequency pulses that resemble human physiological signals. The frequency of output pulses increases with the applied pressure. Consequently, an ATP-based artificial sensory system is constructed for intelligent tactile perception. This work provides a simple and versatile strategy for practical applications of wearable electronics in the fields of robotics, sports science, and human-machine interfaces technologies.
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Affiliation(s)
- Bingjun Wang
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing101400China
- School of Nanoscience and TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
| | - Yuanhong Shi
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing101400China
- School of Nanoscience and TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
| | - Haotian Li
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
- Institute of Flexible ElectronicsBeijing Institute of TechnologyBeijing102488China
| | - Qilin Hua
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
- Institute of Flexible ElectronicsBeijing Institute of TechnologyBeijing102488China
| | - Keyu Ji
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing101400China
| | - Zilong Dong
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing101400China
- School of Nanoscience and TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhaowei Cui
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing101400China
| | - Tianci Huang
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
- Institute of Flexible ElectronicsBeijing Institute of TechnologyBeijing102488China
| | - Zhongming Chen
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
- Institute of Flexible ElectronicsBeijing Institute of TechnologyBeijing102488China
| | - Ruilai Wei
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
- Institute of Flexible ElectronicsBeijing Institute of TechnologyBeijing102488China
| | - Weiguo Hu
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing101400China
- School of Nanoscience and TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
| | - Guozhen Shen
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
- Institute of Flexible ElectronicsBeijing Institute of TechnologyBeijing102488China
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Ahsan R, Chae HU, Jalal SAA, Wu Z, Tao J, Das S, Liu H, Wu JB, Cronin SB, Wang H, Sideris C, Kapadia R. Ultralow Power In-Sensor Neuronal Computing with Oscillatory Retinal Neurons for Frequency-Multiplexed, Parallel Machine Vision. ACS NANO 2024; 18:23785-23796. [PMID: 39140995 DOI: 10.1021/acsnano.4c09055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
In-sensor and near-sensor computing architectures enable multiply accumulate operations to be carried out directly at the point of sensing. In-sensor architectures offer dramatic power and speed improvements over traditional von Neumann architectures by eliminating multiple analog-to-digital conversions, data storage, and data movement operations. Current in-sensor processing approaches rely on tunable sensors or additional weighting elements to perform linear functions such as multiply accumulate operations as the sensor acquires data. This work implements in-sensor computing with an oscillatory retinal neuron device that converts incident optical signals into voltage oscillations. A computing scheme is introduced based on the frequency shift of coupled oscillators that enables parallel, frequency multiplexed, nonlinear operations on the inputs. An experimentally implemented 3 × 3 focal plane array of coupled neurons shows that functions approximating edge detection, thresholding, and segmentation occur in parallel. An example of inference on handwritten digits from the MNIST database is also experimentally demonstrated with a 3 × 3 array of coupled neurons feeding into a single hidden layer neural network, approximating a liquid-state machine. Finally, the equivalent energy consumption to carry out image processing operations, including peripherals such as the Fourier transform circuits, is projected to be <20 fJ/OP, possibly reaching as low as 15 aJ/OP.
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Affiliation(s)
- Ragib Ahsan
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Hyun Uk Chae
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Seyedeh Atiyeh Abbasi Jalal
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Zezhi Wu
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Jun Tao
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Subrata Das
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Hefei Liu
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Jiang-Bin Wu
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Stephen B Cronin
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Han Wang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Constantine Sideris
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Rehan Kapadia
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
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20
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Li Z, Li Z, Tang W, Yao J, Dou Z, Gong J, Li Y, Zhang B, Dong Y, Xia J, Sun L, Jiang P, Cao X, Yang R, Miao X, Yang R. Crossmodal sensory neurons based on high-performance flexible memristors for human-machine in-sensor computing system. Nat Commun 2024; 15:7275. [PMID: 39179548 PMCID: PMC11344147 DOI: 10.1038/s41467-024-51609-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Accepted: 08/13/2024] [Indexed: 08/26/2024] Open
Abstract
Constructing crossmodal in-sensor processing system based on high-performance flexible devices is of great significance for the development of wearable human-machine interfaces. A bio-inspired crossmodal in-sensor computing system can perform real-time energy-efficient processing of multimodal signals, alleviating data conversion and transmission between different modules in conventional chips. Here, we report a bio-inspired crossmodal spiking sensory neuron (CSSN) based on a flexible VO2 memristor, and demonstrate a crossmodal in-sensor encoding and computing system for wearable human-machine interfaces. We demonstrate excellent performance in the VO2 memristor including endurance (>1012), uniformity (0.72% for cycle-to-cycle variations and 3.73% for device-to-device variations), speed (<30 ns), and flexibility (bendable to a curvature radius of 1 mm). A flexible hardware processing system is implemented based on the CSSN, which can directly perceive and encode pressure and temperature bimodal information into spikes, and then enables the real-time haptic-feedback for human-machine interaction. We successfully construct a crossmodal in-sensor spiking reservoir computing system via the CSSNs, which can achieve dynamic objects identification with a high accuracy of 98.1% and real-time signal feedback. This work provides a feasible approach for constructing flexible bio-inspired crossmodal in-sensor computing systems for wearable human-machine interfaces.
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Affiliation(s)
- Zhiyuan Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
- Hubei Yangtze Memory Laboratories, Wuhan, China
| | - Zhongshao Li
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Wei Tang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Jiaping Yao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Zhipeng Dou
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Junjie Gong
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Yongfei Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Beining Zhang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Yunxiao Dong
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Jian Xia
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
| | - Lin Sun
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Xun Cao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
| | - Rui Yang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China.
- Hubei Yangtze Memory Laboratories, Wuhan, China.
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China.
- Hubei Yangtze Memory Laboratories, Wuhan, China.
| | - Ronggui Yang
- State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, China
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21
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Zhang YH, Sipling C, Qiu E, Schuller IK, Di Ventra M. Collective dynamics and long-range order in thermal neuristor networks. Nat Commun 2024; 15:6986. [PMID: 39143044 PMCID: PMC11324871 DOI: 10.1038/s41467-024-51254-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 08/04/2024] [Indexed: 08/16/2024] Open
Abstract
In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed "thermal neuristors." These devices function via thermal interactions among neighboring vanadium dioxide resistive memories, emulating biological neuronal behavior. Here, we show that the collective dynamical behavior of networks of these neurons showcases a rich phase structure, tunable by adjusting the thermal coupling and input voltage. Notably, we identify phases exhibiting long-range order that, however, does not arise from criticality, but rather from the time non-local response of the system. In addition, we show that these thermal neuristor arrays achieve high accuracy in image recognition and time series prediction through reservoir computing, without leveraging long-range order. Our findings highlight a crucial aspect of neuromorphic computing with possible implications on the functioning of the brain: criticality may not be necessary for the efficient performance of neuromorphic systems in certain computational tasks.
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Affiliation(s)
- Yuan-Hang Zhang
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA.
| | - Chesson Sipling
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Erbin Qiu
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA
| | - Ivan K Schuller
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
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22
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Dong L, Xue B, Wei G, Yuan S, Chen M, Liu Y, Su Y, Niu Y, Xu B, Wang P. Highly Promising 2D/1D BP-C/CNT Bionic Opto-Olfactory Co-Sensory Artificial Synapses for Multisensory Integration. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403665. [PMID: 38828870 PMCID: PMC11304314 DOI: 10.1002/advs.202403665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/08/2024] [Indexed: 06/05/2024]
Abstract
The development of high-performance artificial synaptic neuromorphic devices poses a significant challenge in the creation of biomimetic sensing neural systems that seamlessly integrate both sensory and computational functionalities. In pursuit of this objective, promising bionic opto-olfactory co-sensory artificial synapse devices are constructed utilizing the BP-C/CNT (2D/1D) hybrid filter membrane as the resistive layer. Experimental results demonstrated that the devices seamlessly integrated the light modulation, gas detection, and biological synaptic functions into a single device while addressing the challenge with separating artificial synaptic devices from sensors. These devices offered the following advantages: 1) Simulating visual synapses, they can effectively replicate fundamental synaptic functions under both electrical and optical stimulation. 2) By emulating olfactory synapse responses to specific gases, they can achieve ultra-low detection limits and rapid identification of ethanol and acetone gases. 3) They enable photo-olfactory co-sensing simulations that mimic synaptic function under light-modulated pulse conditions in distinct gas environments, facilitating the study of synaptic learning rules and Pavlovian responses. This work provides a pioneering approach for exploring highly stable 2D BP-based optoelectronics and advancing the development of biomimetic neural systems.
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Affiliation(s)
- Liyan Dong
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Baojing Xue
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Guodong Wei
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
- Shanxi‐Zheda Institute of Advanced Materials and Chemical EngineeringTaiyuan030024P. R. China
| | - Shuai Yuan
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Mi Chen
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Yue Liu
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Ying Su
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Yong Niu
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Bingshe Xu
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
- Shanxi‐Zheda Institute of Advanced Materials and Chemical EngineeringTaiyuan030024P. R. China
| | - Pan Wang
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
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23
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Lv Z, Zhu S, Wang Y, Ren Y, Luo M, Wang H, Zhang G, Zhai Y, Zhao S, Zhou Y, Jiang M, Leng YB, Han ST. Development of Bio-Voltage Operated Humidity-Sensory Neurons Comprising Self-Assembled Peptide Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405145. [PMID: 38877385 DOI: 10.1002/adma.202405145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 06/11/2024] [Indexed: 06/16/2024]
Abstract
Biomimetic humidity sensors offer a low-power approach for respiratory monitoring in early lung-disease diagnosis. However, balancing miniaturization and energy efficiency remains challenging. This study addresses this issue by introducing a bioinspired humidity-sensing neuron comprising a self-assembled peptide nanowire (NW) memristor with unique proton-coupled ion transport. The proposed neuron shows a low Ag+ activation energy owing to the NW and redox activity of the tyrosine (Tyr)-rich peptide in the system, facilitating ultralow electric-field-driven threshold switching and a high energy efficiency. Additionally, Ag+ migration in the system can be controlled by a proton source owing to the hydrophilic nature of the phenolic hydroxyl group in Tyr, enabling the humidity-based control of the conductance state of the memristor. Furthermore, a memristor-based neuromorphic perception neuron that can encode humidity signals into spikes is proposed. The spiking characteristics of this neuron can be modulated to emulate the strength-modulated spike-frequency characteristics of biological neurons. A three-layer spiking neural network with input neurons comprising these highly tunable humidity perception neurons shows an accuracy of 92.68% in lung-disease diagnosis. This study paves the way for developing bioinspired self-assembly strategies to construct neuromorphic perception systems, bridging the gap between artificial and biological sensing and processing paradigms.
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Affiliation(s)
- Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shirui Zhu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan Wang
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Yanyun Ren
- 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Mingtao Luo
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hanning Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guohua Zhang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shilong Zhao
- School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Minghao Jiang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
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24
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Li L, Zhou T, Xiao Y, Zhao S, Zhu J, Liu M, Lin Z, Sun B, Li J, Zou C. Dimension-Controlled VO 2 Film for Optoelectronic Logic Gates and Information Encryption. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39046366 DOI: 10.1021/acsami.4c04546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/25/2024]
Abstract
As the fields of photonics and information technology develop, a lot of novel applications based on VO2 material, such as optoelectronic computing and information encryption, have been developed. While the performance of these devices was not only closely associated with the VO2 phase transition properties but also depended on their dimensional characteristics. In the current study, we conducted the dimension-controlled vanadium dioxide (VO2) film growth, resulting in the epitaxial 2-dimensional (2D) VO2 film and well-distributed 3-dimensional (3D) VO2 crystal film deposition, respectively. It was revealed that, unlike the 2D film, the pronounced localized surface plasmon resonance dominated the near-infrared spectrum across the phase transition for the 3D VO2 film due to the naturally formed meta-surface structure, which showed a transmittance valley in the infrared spectrum after metallization. Based on this distinct infrared spectrum feature in the 3D VO2 film, we proposed an optoelectronic logic gate controlled by the input voltage and the probing Vis/IR light. By detecting the transmittance states of the probing light with different wavelengths, we achieved multistate encoding functions and demonstrated the information encryption application. This new conception device also showed great potential for some other applications such as optoelectronic coupled computing, information encryption, and optical near-field sensing computing.
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Affiliation(s)
- Liang Li
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Ting Zhou
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Yi Xiao
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Shanguang Zhao
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Jinglin Zhu
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Meiling Liu
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Zhihan Lin
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Bowen Sun
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Jianjun Li
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
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25
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Ren Q, Zhu C, Ma S, Wang Z, Yan J, Wan T, Yan W, Chai Y. Optoelectronic Devices for In-Sensor Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2407476. [PMID: 39004873 DOI: 10.1002/adma.202407476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2024] [Revised: 06/27/2024] [Indexed: 07/16/2024]
Abstract
The demand for accurate perception of the physical world leads to a dramatic increase in sensory nodes. However, the transmission of massive and unstructured sensory data from sensors to computing units poses great challenges in terms of power-efficiency, transmission bandwidth, data storage, time latency, and security. To efficiently process massive sensory data, it is crucial to achieve data compression and structuring at the sensory terminals. In-sensor computing integrates perception, memory, and processing functions within sensors, enabling sensory terminals to perform data compression and data structuring. Here, vision sensors are adopted as an example and discuss the functions of electronic, optical, and optoelectronic hardware for visual processing. Particularly, hardware implementations of optoelectronic devices for in-sensor visual processing that can compress and structure multidimensional vision information are examined. The underlying resistive switching mechanisms of volatile/nonvolatile optoelectronic devices and their processing operations are explored. Finally, a perspective on the future development of optoelectronic devices for in-sensor computing is provided.
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Affiliation(s)
- Qinqi Ren
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Chaoyi Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Zhaoqing Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Jianmin Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Weicheng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
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26
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Li G, Wang Z, Chen Y, Jeon JC, Parkin SSP. Computational elements based on coupled VO 2 oscillators via tunable thermal triggering. Nat Commun 2024; 15:5820. [PMID: 38987537 PMCID: PMC11236964 DOI: 10.1038/s41467-024-49925-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Accepted: 06/19/2024] [Indexed: 07/12/2024] Open
Abstract
Computational technologies based on coupled oscillators are of great interest for energy efficient computing. A key to developing such technologies is the tunable control of the interaction among oscillators which today is accomplished by additional electronic components. Here we show that the synchronization of closely spaced vanadium dioxide (VO2) oscillators can be controlled via a simple thermal triggering element that itself is formed from VO2. The net energy consumed by the oscillators is lower during thermal coupling compared with the situation where they are oscillating independently. As the size of the oscillator shrinks from 6 μm to 200 nm both the energy efficiency and the oscillator frequency increases. Based on such oscillators with active tuning, we demonstrate AND, NAND, and NOR logic gates and various firing patterns that mimic the behavior of spiking neurons. Our findings demonstrate an innovative approach towards computational techniques based on networks of thermally coupled oscillators.
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Affiliation(s)
- Guanmin Li
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Zhong Wang
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Yuliang Chen
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Jae-Chun Jeon
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany.
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany.
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27
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Bonagiri A, Das SK, Marquez CV, Rúa A, Puyoo E, Nath SK, Albertini D, Baboux N, Uenuma M, Elliman RG, Nandi SK. Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31283-31293. [PMID: 38836546 DOI: 10.1021/acsami.4c03803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Neuromorphic nanoelectronic devices that can emulate the temperature-sensitive dynamics of biological neurons are of great interest for bioinspired robotics and advanced applications such as in silico neuroscience. In this work, we demonstrate the biomimetic thermosensitive properties of two-terminal V3O5 memristive devices and showcase their similarity to the firing characteristics of thermosensitive biological neurons. The temperature-dependent electrical characteristics of V3O5-based memristors are used to understand the spiking response of a simple relaxation oscillator. The temperature-dependent dynamics of these oscillators are then compared with those of biological neurons through numerical simulations of a conductance-based neuron model, the Morris-Lecar neuron model. Finally, we demonstrate a robust neuromorphic thermosensation system inspired by biological thermoreceptors for bioinspired thermal perception and representation. These results not only demonstrate the biorealistic emulative potential of threshold-switching memristors but also establish V3O5 as a functional material for realizing solid-state neurons for neuromorphic computing and sensing applications.
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Affiliation(s)
- Akhil Bonagiri
- Department of Electronics and Communication, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
| | - Sujan Kumar Das
- Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | | | - Armando Rúa
- Department of Physics, University of Puerto Rico, Mayaguez, PR 00681, United States
| | - Etienne Puyoo
- CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, Villeurbanne 69622, France
| | - Shimul Kanti Nath
- Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW Sydney), Kensington, NSW 2052, Australia
| | - David Albertini
- CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, Villeurbanne 69622, France
| | - Nicolas Baboux
- CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, Villeurbanne 69622, France
| | - Mutsunori Uenuma
- Information Device Science Laboratory, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
| | - Robert Glen Elliman
- Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sanjoy Kumar Nandi
- Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia
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28
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Bidoul N, Roisin N, Flandre D. Tuning the Intrinsic Stochasticity of Resistive Switching in VO 2 Microresistors. NANO LETTERS 2024; 24:6201-6209. [PMID: 38757925 DOI: 10.1021/acs.nanolett.4c00184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Vanadium dioxide (VO2) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO2 microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements across numerous cycles. Our results highlight that the cycle-to-cycle variations in threshold voltage increase as the grain size becomes comparable to the device dimensions. We also present observations of multimodal threshold voltage distributions in the smaller-length resistors. To understand the underlying phenomenon, we investigate the relationship between the device insulating resistance and threshold voltage distributions, showing that these modes could correspond to distinct percolation paths and filaments. Our findings provide the first experimentally verified guidelines for designing VO2 devices with minimized/maximized stochasticity, depending on the targeted application.
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Affiliation(s)
- Noémie Bidoul
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| | - Nicolas Roisin
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| | - Denis Flandre
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
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29
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Ahmadi M, Atul A, de Graaf S, van der Veer E, Meise A, Tavabi AH, Heggen M, Dunin-Borkowski RE, Ahmadi M, Kooi BJ. Atomically Resolved Phase Coexistence in VO 2 Thin Films. ACS NANO 2024; 18:13496-13505. [PMID: 38752408 PMCID: PMC11140831 DOI: 10.1021/acsnano.3c10745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 04/22/2024] [Accepted: 05/01/2024] [Indexed: 05/29/2024]
Abstract
Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.
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Affiliation(s)
- Masoud Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Atul Atul
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Sytze de Graaf
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ewout van der Veer
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ansgar Meise
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Amir Hossein Tavabi
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Marc Heggen
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Rafal E. Dunin-Borkowski
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Majid Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Bart J. Kooi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
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30
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Li K, Yao J, Zhao P, Luo Y, Ge X, Yang R, Cheng X, Miao X. Ovonic threshold switching-based artificial afferent neurons for thermal in-sensor computing. MATERIALS HORIZONS 2024; 11:2106-2114. [PMID: 38545857 DOI: 10.1039/d4mh00053f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Artificial afferent neurons in the sensory nervous system inspired by biology have enormous potential for efficiently perceiving and processing environmental information. However, the previously reported artificial afferent neurons suffer from two prominent challenges: considerable power consumption and limited scalability efficiency. Herein, addressing these challenges, a bioinspired artificial thermal afferent neuron based on a N-doped SiTe ovonic threshold switching (OTS) device is presented for the first time. The engineered OTS device shows remarkable uniformity and robust endurance, ensuring the reliability and efficacy of the artificial afferent neurons. A substantially decreased leakage current of the SiTe OTS device by nitrogen doping results in ultra-low power consumption less than 0.3 nJ per spike for artificial afferent neurons. The inherent temperature response exhibited by N-doped SiTe OTS materials allows us to construct a highly compact artificial thermal afferent neuron over a wide temperature range. An edge detection task is performed to further verify its thermal perceptual computing function. Our work provides an insight into OTS-based artificial afferent neurons for electronic skin and sensory neurorobotics.
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Affiliation(s)
- Kai Li
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Jiaping Yao
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Peng Zhao
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yunhao Luo
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Xiang Ge
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Rui Yang
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Xiaomin Cheng
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Xiangshui Miao
- School of Integrated Circuits, Hubei Key Laboratory for Advanced Memories, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
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31
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Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
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Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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32
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Sternbach AJ, Slusar T, Ruta FL, Moore S, Chen X, Liu MK, Kim HT, Millis AJ, Averitt RD, Basov DN. Inhomogeneous Photosusceptibility of VO_{2} Films at the Nanoscale. PHYSICAL REVIEW LETTERS 2024; 132:186903. [PMID: 38759203 DOI: 10.1103/physrevlett.132.186903] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Accepted: 04/03/2024] [Indexed: 05/19/2024]
Abstract
Pump-probe nano-optical experiments were used to study the light-induced insulator to metal transition (IMT) in thin films of vanadium dioxide (VO_{2}), a prototypical correlated electron system. We show that inhomogeneous optical contrast is prompted by spatially uniform photoexcitation, indicating an inhomogeneous photosusceptibility of VO_{2}. We locally characterize temperature and time dependent variations of the photoexcitation threshold necessary to induce the IMT on picosecond timescales with hundred nanometer spatial resolution. We separately measure the critical temperature T_{L}, where the IMT onsets and the local transient electronic nano-optical contrast at the nanoscale. Our data reveal variations in the photosusceptibility of VO_{2} within nanoscopic regions characterized by the same critical temperature T_{L} where metallic domains can first nucleate.
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Affiliation(s)
- A J Sternbach
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - T Slusar
- Electronics and Telecommunications Research Institute, Daejeon, 34129 Republic of Korea
| | - F L Ruta
- Department of Physics, Columbia University, New York, New York 10027, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
| | - S Moore
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - X Chen
- Department of Physics, Columbia University, New York, New York 10027, USA
- Department of Physics, Stony Brook University, Stony Brook, New York 11790, USA
| | - M K Liu
- Department of Physics, Stony Brook University, Stony Brook, New York 11790, USA
| | - H T Kim
- Electronics and Telecommunications Research Institute, Daejeon, 34129 Republic of Korea
| | - A J Millis
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - R D Averitt
- Department of Physics, University of California San Diego, San Diego, California 92093, USA
| | - D N Basov
- Department of Physics, Columbia University, New York, New York 10027, USA
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33
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Chen J, Liu X, Liu C, Tang L, Bu T, Jiang B, Qing Y, Xie Y, Wang Y, Shan Y, Li R, Ye C, Liao L. Reconfigurable Ag/HfO 2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System. NANO LETTERS 2024; 24:5371-5378. [PMID: 38647348 DOI: 10.1021/acs.nanolett.4c01319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO2/NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and neuronal functions. A neuromorphic computing system effectively replicates the biological synaptic weight alteration and continuously accomplishes excitation and reset of artificial neurons, which consist of bionic synapses and artificial neurons based on isotype Ag/HfO2/NiO/Pt memristors. This reconfigurable electrical performance of the Ag/HfO2/NiO/Pt memristors takes advantage of simplified hardware design and delivers integrated circuits with high density, which exhibits great potency for future neural networks.
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Affiliation(s)
- Jiaqi Chen
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Xingqiang Liu
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lin Tang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Tong Bu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Bei Jiang
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
| | - Yahui Qing
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Yulu Xie
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Yong Wang
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Yongtao Shan
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Ruxin Li
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Cong Ye
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
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34
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Yang C, Wang H, Cao Z, Chen X, Zhou G, Zhao H, Wu Z, Zhao Y, Sun B. Memristor-Based Bionic Tactile Devices: Opening the Door for Next-Generation Artificial Intelligence. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308918. [PMID: 38149504 DOI: 10.1002/smll.202308918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Revised: 11/13/2023] [Indexed: 12/28/2023]
Abstract
Bioinspired tactile devices can effectively mimic and reproduce the functions of the human tactile system, presenting significant potential in the field of next-generation wearable electronics. In particular, memristor-based bionic tactile devices have attracted considerable attention due to their exceptional characteristics of high flexibility, low power consumption, and adaptability. These devices provide advanced wearability and high-precision tactile sensing capabilities, thus emerging as an important research area within bioinspired electronics. This paper delves into the integration of memristors with other sensing and controlling systems and offers a comprehensive analysis of the recent research advancements in memristor-based bionic tactile devices. These advancements incorporate artificial nociceptors and flexible electronic skin (e-skin) into the category of bio-inspired sensors equipped with capabilities for sensing, processing, and responding to stimuli, which are expected to catalyze revolutionary changes in human-computer interaction. Finally, this review discusses the challenges faced by memristor-based bionic tactile devices in terms of material selection, structural design, and sensor signal processing for the development of artificial intelligence. Additionally, it also outlines future research directions and application prospects of these devices, while proposing feasible solutions to address the identified challenges.
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Affiliation(s)
- Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Xiaoliang Chen
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Zhenhua Wu
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 DongChuan Rd, Shanghai, 200240, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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35
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Galloni AR, Yuan Y, Zhu M, Yu H, Bisht RS, Wu CTM, Grienberger C, Ramanathan S, Milstein AD. Neuromorphic one-shot learning utilizing a phase-transition material. Proc Natl Acad Sci U S A 2024; 121:e2318362121. [PMID: 38630718 PMCID: PMC11047090 DOI: 10.1073/pnas.2318362121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Accepted: 03/25/2024] [Indexed: 04/19/2024] Open
Abstract
Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient AI and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing material phase transitions. Here, we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to fourfold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning in neuromorphic hardware.
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Affiliation(s)
- Alessandro R. Galloni
- Department of Neuroscience and Cell Biology, Robert Wood Johnson Medical School, Rutgers, The State University of New Jersey, Piscataway, NJ08854
- Center for Advanced Biotechnology and Medicine, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Yifan Yuan
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Minning Zhu
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, IN47907
| | - Ravindra S. Bisht
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Chung-Tse Michael Wu
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Christine Grienberger
- Department of Neuroscience, Brandeis University, Waltham, MA02453
- Department of Biology and Volen National Center for Complex Systems, Brandeis University, Waltham, MA02453
| | - Shriram Ramanathan
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Aaron D. Milstein
- Department of Neuroscience and Cell Biology, Robert Wood Johnson Medical School, Rutgers, The State University of New Jersey, Piscataway, NJ08854
- Center for Advanced Biotechnology and Medicine, Rutgers, The State University of New Jersey, Piscataway, NJ08854
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36
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Karimov T, Ostrovskii V, Rybin V, Druzhina O, Kolev G, Butusov D. Magnetic Flux Sensor Based on Spiking Neurons with Josephson Junctions. SENSORS (BASEL, SWITZERLAND) 2024; 24:2367. [PMID: 38610577 PMCID: PMC11014145 DOI: 10.3390/s24072367] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 04/05/2024] [Accepted: 04/06/2024] [Indexed: 04/14/2024]
Abstract
Josephson junctions (JJs) are superconductor-based devices used to build highly sensitive magnetic flux sensors called superconducting quantum interference devices (SQUIDs). These sensors may vary in design, being the radio frequency (RF) SQUID, direct current (DC) SQUID, and hybrid, such as D-SQUID. In addition, recently many of JJ's applications were found in spiking models of neurons exhibiting nearly biological behavior. In this study, we propose and investigate a new circuit model of a sensory neuron based on DC SQUID as part of the circuit. The dependence of the dynamics of the designed model on the external magnetic flux is demonstrated. The design of the circuit and derivation of the corresponding differential equations that describe the dynamics of the system are given. Numerical simulation is used for experimental evaluation. The experimental results confirm the applicability and good performance of the proposed magnetic-flux-sensitive neuron concept: the considered device can encode the magnetic flux in the form of neuronal dynamics with the linear section. Furthermore, some complex behavior was discovered in the model, namely the intermittent chaotic spiking and plateau bursting. The proposed design can be efficiently applied to developing the interfaces between circuitry and spiking neural networks. However, it should be noted that the proposed neuron design shares the main limitation of all the superconductor-based technologies, i.e., the need for a cryogenic and shielding system.
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Affiliation(s)
- Timur Karimov
- Youth Research Institute, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (T.K.); (V.O.)
| | - Valerii Ostrovskii
- Youth Research Institute, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (T.K.); (V.O.)
| | - Vyacheslav Rybin
- Computer-Aided Design Department, Saint Petersburg Electrotechnical University “LETI”, 5 Professora Popova St., 197022 Saint Petersburg, Russia; (V.R.); (O.D.); (G.K.)
| | - Olga Druzhina
- Computer-Aided Design Department, Saint Petersburg Electrotechnical University “LETI”, 5 Professora Popova St., 197022 Saint Petersburg, Russia; (V.R.); (O.D.); (G.K.)
| | - Georgii Kolev
- Computer-Aided Design Department, Saint Petersburg Electrotechnical University “LETI”, 5 Professora Popova St., 197022 Saint Petersburg, Russia; (V.R.); (O.D.); (G.K.)
| | - Denis Butusov
- Computer-Aided Design Department, Saint Petersburg Electrotechnical University “LETI”, 5 Professora Popova St., 197022 Saint Petersburg, Russia; (V.R.); (O.D.); (G.K.)
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37
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Lee JH, Cho K, Kim JK. Age of Flexible Electronics: Emerging Trends in Soft Multifunctional Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310505. [PMID: 38258951 DOI: 10.1002/adma.202310505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 12/27/2023] [Indexed: 01/24/2024]
Abstract
With the commercialization of first-generation flexible mobiles and displays in the late 2010s, humanity has stepped into the age of flexible electronics. Inevitably, soft multifunctional sensors, as essential components of next-generation flexible electronics, have attracted tremendous research interest like never before. This review is dedicated to offering an overview of the latest emerging trends in soft multifunctional sensors and their accordant future research and development (R&D) directions for the coming decade. First, key characteristics and the predominant target stimuli for soft multifunctional sensors are highlighted. Second, important selection criteria for soft multifunctional sensors are introduced. Next, emerging materials/structures and trends for soft multifunctional sensors are identified. Specifically, the future R&D directions of these sensors are envisaged based on their emerging trends, namely i) decoupling of multiple stimuli, ii) data processing, iii) skin conformability, and iv) energy sources. Finally, the challenges and potential opportunities for these sensors in future are discussed, offering new insights into prospects in the fast-emerging technology.
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Affiliation(s)
- Jeng-Hun Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Jang-Kyo Kim
- Department of Mechanical Engineering, Khalifa University, P. O. Box 127788, Abu Dhabi, United Arab Emirates
- School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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38
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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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Yang K, Wang Y, Tiw PJ, Wang C, Zou X, Yuan R, Liu C, Li G, Ge C, Wu S, Zhang T, Huang R, Yang Y. High-order sensory processing nanocircuit based on coupled VO 2 oscillators. Nat Commun 2024; 15:1693. [PMID: 38402226 PMCID: PMC10894221 DOI: 10.1038/s41467-024-45992-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Accepted: 02/08/2024] [Indexed: 02/26/2024] Open
Abstract
Conventional circuit elements are constrained by limitations in area and power efficiency at processing physical signals. Recently, researchers have delved into high-order dynamics and coupled oscillation dynamics utilizing Mott devices, revealing potent nonlinear computing capabilities. However, the intricate yet manageable population dynamics of multiple artificial sensory neurons with spatiotemporal coupling remain unexplored. Here, we present an experimental hardware demonstration featuring a capacitance-coupled VO2 phase-change oscillatory network. This network serves as a continuous-time dynamic system for sensory pre-processing and encodes information in phase differences. Besides, a decision-making module for special post-processing through software simulation is designed to complete a bio-inspired dynamic sensory system. Our experiments provide compelling evidence that this transistor-free coupling network excels in sensory processing tasks such as touch recognition and gesture recognition, achieving significant advantages of fewer devices and lower energy-delay-product compared to conventional methods. This work paves the way towards an efficient and compact neuromorphic sensory system based on nano-scale nonlinear dynamics.
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Affiliation(s)
- Ke Yang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Yanghao Wang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Pek Jun Tiw
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Chaoming Wang
- School of Psychological and Cognitive Sciences, IDG/McGovern Institute for Brain Research, PKU-Tsinghua Center for Life Sciences, Peking University, Beijing, 100871, China
| | - Xiaolong Zou
- School of Psychological and Cognitive Sciences, IDG/McGovern Institute for Brain Research, PKU-Tsinghua Center for Life Sciences, Peking University, Beijing, 100871, China
| | - Rui Yuan
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Chang Liu
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Si Wu
- School of Psychological and Cognitive Sciences, IDG/McGovern Institute for Brain Research, PKU-Tsinghua Center for Life Sciences, Peking University, Beijing, 100871, China
| | - Teng Zhang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China.
| | - Ru Huang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Yuchao Yang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China.
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing, 100871, China.
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, 102206, China.
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Liu C, Tiw PJ, Zhang T, Wang Y, Cai L, Yuan R, Pan Z, Yue W, Tao Y, Yang Y. VO 2 memristor-based frequency converter with in-situ synthesize and mix for wireless internet-of-things. Nat Commun 2024; 15:1523. [PMID: 38374302 PMCID: PMC10876666 DOI: 10.1038/s41467-024-45923-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Accepted: 02/07/2024] [Indexed: 02/21/2024] Open
Abstract
Wireless internet-of-things (WIoT) with data acquisition sensors are evolving rapidly and the demand for transmission efficiency is growing rapidly. Frequency converter that synthesizes signals at different frequencies and mixes them with sensor datastreams is a key component for efficient wireless transmission. However, existing frequency converters employ separate synthesize and mix circuits with complex digital and analog circuits using complementary metal-oxide semiconductor (CMOS) devices, naturally incurring excessive latency and energy consumption. Here we report a highly uniform and calibratable VO2 memristor oscillator, based on which we build memristor-based frequency converter using 8[Formula: see text]8 VO2 array that can realize in-situ frequency synthesize and mix with help of compact periphery circuits. We investigate the self-oscillation based on negative differential resistance of VO2 memristors and the programmability with different driving currents and calibration resistances, demonstrating capabilities of such frequency converter for in-situ frequency synthesize and mix for 2 ~ 8 channels with frequencies up to 48 kHz for low frequency transmission link. When transmitting classical sensor data (acoustic, vision and spatial) in an end-to-end WIoT experimental setup, our VO2-based memristive frequency converter presents up to 1.45× ~ 1.94× power enhancement with only 0.02 ~ 0.21 dB performance degradations compared with conventional CMOS-based frequency converter. This work highlights the potential in solving frequency converter's speed and energy efficiency problems in WIoT using high crystalline quality epitaxially grown VO2 and calibratable VO2-based oscillator array, revealing a promising direction for next-generation WIoT system design.
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Affiliation(s)
- Chang Liu
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Pek Jun Tiw
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Teng Zhang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Yanghao Wang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Lei Cai
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Rui Yuan
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Zelun Pan
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Wenshuo Yue
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Yaoyu Tao
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China.
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing, 100871, China.
| | - Yuchao Yang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China.
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing, 100871, China.
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, Beijing, 102206, China.
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Zhong H, He T, Wang Y, Qi T, Meng Y, Li D, Yan P, Xiao Q. Efficient polarization-insensitive quasi-BIC modulation by VO 2 thin films. OPTICS EXPRESS 2024; 32:5862-5873. [PMID: 38439302 DOI: 10.1364/oe.515896] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Accepted: 01/18/2024] [Indexed: 03/06/2024]
Abstract
Bound states in the continuum (BIC) offer great design freedom for realizing high-quality factor metasurfaces. By deliberately disrupting the inherent symmetries, BIC can degenerate into quasi-BIC exhibiting sharp spectra with strong light confinement. This transformation has been exploited to develop cutting-edge sensors and modulators. However, most proposed quasi-BICs in metasurfaces are composed of unit cells with Cs symmetry that may experience performance degradation due to polarization deviation, posing challenges in practical applications. Addressing this critical issue, our research introduces an innovative approach by incorporating metasurfaces with C4v unit cell symmetry to eliminate polarization response sensitivity. Vanadium Dioxide (VO2) is a phase-change material with a relatively low transition temperature and reversibility. Here, we theoretically investigate the polarization-insensitive quasi-BIC modulation in Si-VO2 hybrid metasurfaces. By introducing defects into metasurfaces with Cs, C4, and C4v symmetries, we enable the emergence of quasi-BICs characterized by strong Fano resonance in their transmission spectra. Via numerically calculating the multipole decomposition, distinct dominant multipoles for different quasi-BICs are identified. A comprehensive investigation into the polarization responses of these structures under varying directions of linearly polarized light reveals the superior polarization-independent characteristics of metasurfaces with C4 and C4v symmetries, a feature that ensures the maintenance of maximum resonance peaks irrespective of polarization direction. Utilizing the polarization-insensitive quasi-BIC, we thus designed two different Si-VO2 hybrid metasurfaces with C4v symmetry. Each configuration presents complementary benefits, leveraging the VO2 phase transition's loss change to facilitate efficient modulation. Our quantitative calculation indicates notable achievements in modulation depth, with a maximum relative modulation depth reaching up to 342%. For the first time, our research demonstrates efficient modulation using polarization-insensitive quasi-BICs in designed Si-VO2 hybrid metasurfaces, achieving identical polarization responses for quasi-BIC-based applications. Our work paves the way for designing polarization-independent quasi-BICs in metasurfaces and marks a notable advancement in the field of tunable integrated devices.
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Ma H, Fang H, Xie X, Liu Y, Tian H, Chai Y. Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual-Olfactory Crossmodal Perception. NANO-MICRO LETTERS 2024; 16:104. [PMID: 38300424 PMCID: PMC10834395 DOI: 10.1007/s40820-024-01330-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 12/11/2023] [Indexed: 02/02/2024]
Abstract
The crossmodal interaction of different senses, which is an important basis for learning and memory in the human brain, is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception, but related researches are scarce. Here, we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus (VP) van der Waals heterojunctions. Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene, the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude, reaching up to 7.7 A W-1. Excited by ultraviolet light, multiple synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, short/long-term plasticity and "learning-experience" behavior, were demonstrated with a low power consumption. Furthermore, the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments, enabling it to simulate the interaction of visual and olfactory information for crossmodal perception. This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.
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Affiliation(s)
- Hailong Ma
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Huajing Fang
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Xinxing Xie
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanming Liu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
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Lee YJ, Kim Y, Gim H, Hong K, Jang HW. Nanoelectronics Using Metal-Insulator Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305353. [PMID: 37594405 DOI: 10.1002/adma.202305353] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/02/2023] [Indexed: 08/19/2023]
Abstract
Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Youngmin Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyeongyu Gim
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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Kwon JY, Kim JE, Kim JS, Chun SY, Soh K, Yoon JH. Artificial sensory system based on memristive devices. EXPLORATION (BEIJING, CHINA) 2024; 4:20220162. [PMID: 38854486 PMCID: PMC10867403 DOI: 10.1002/exp.20220162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/16/2023] [Indexed: 06/11/2024]
Abstract
In the biological nervous system, the integration and cooperation of parallel system of receptors, neurons, and synapses allow efficient detection and processing of intricate and disordered external information. Such systems acquire and process environmental data in real-time, efficiently handling complex tasks with minimal energy consumption. Memristors can mimic typical biological receptors, neurons, and synapses by implementing key features of neuronal signal-processing functions such as selective adaption in receptors, leaky integrate-and-fire in neurons, and synaptic plasticity in synapses. External stimuli are sensitively detected and filtered by "artificial receptors," encoded into spike signals via "artificial neurons," and integrated and stored through "artificial synapses." The high operational speed, low power consumption, and superior scalability of memristive devices make their integration with high-performance sensors a promising approach for creating integrated artificial sensory systems. These integrated systems can extract useful data from a large volume of raw data, facilitating real-time detection and processing of environmental information. This review explores the recent advances in memristor-based artificial sensory systems. The authors begin with the requirements of artificial sensory elements and then present an in-depth review of such elements demonstrated by memristive devices. Finally, the major challenges and opportunities in the development of memristor-based artificial sensory systems are discussed.
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Affiliation(s)
- Ju Young Kwon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
| | - Ji Eun Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jong Sung Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Suk Yeop Chun
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoulRepublic of Korea
| | - Keunho Soh
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
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Wen J, Zhang L, Wang YZ, Guo X. Artificial Tactile Perception System Based on Spiking Tactile Neurons and Spiking Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2024; 16:998-1004. [PMID: 38117011 DOI: 10.1021/acsami.3c12244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
The artificial tactile perception system of this work utilizes a fully connected spiking neural network (SNN) comprising two layers. Its architecture is streamlined and energy-efficient as it directly integrates spiking tactile neurons with piezoresistive sensors and Pt/NbOx/TiN memristors as input neurons. These spiking tactile neurons possess the ability to perceive and integrate pressure stimuli from multiple sensors and encode the information into rate-coded electrical spikes, closely resembling the behavior of a biological tactile neuron. The system's real-time information processing capability is demonstrated through an artificial perceptual learning system that successfully encodes and decodes the Morse code; the artificial perceptual learning system accurately recognizes and displays 26 English letters. Furthermore, the artificial tactile perception system is evaluated for the recognition of the MNIST data set, achieving a classification accuracy of 85.7% with the supervised spiking-rate-dependent plasticity learning rule. The key advantages of this artificial tactile perception system are its simple structure and high efficiency, which contributes to its practicality for various real-world applications.
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Affiliation(s)
- Juan Wen
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Le Zhang
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Yu-Zhe Wang
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Xin Guo
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
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Ren SG, Dong AW, Yang L, Xue YB, Li JC, Yu YJ, Zhou HJ, Zuo WB, Li Y, Cheng WM, Miao XS. Self-Rectifying Memristors for Three-Dimensional In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307218. [PMID: 37972344 DOI: 10.1002/adma.202307218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 10/13/2023] [Indexed: 11/19/2023]
Abstract
Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In-memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large-scale and high-density crossbar arrays, particularly in three-dimensional (3D) integration. As a perfect solution to the sneak-path issue, a self-rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>102 Mbit). Moreover, SRM-configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
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Affiliation(s)
- Sheng-Guang Ren
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - A-Wei Dong
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ling Yang
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi-Bai Xue
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jian-Cong Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yin-Jie Yu
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hou-Ji Zhou
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Bin Zuo
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Wei-Ming Cheng
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Xiang-Shui Miao
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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Zheng Y, Ghosh S, Das S. A Butterfly-Inspired Multisensory Neuromorphic Platform for Integration of Visual and Chemical Cues. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2307380. [PMID: 38069632 DOI: 10.1002/adma.202307380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 11/25/2023] [Indexed: 12/23/2023]
Abstract
Unisensory cues are often insufficient for animals to effectively engage in foraging, mating, and predatory activities. In contrast, integration of cues collected from multiple sensory organs enhances the overall perceptual experience and thereby facilitates better decision-making. Despite the importance of multisensory integration in animals, the field of artificial intelligence (AI) and neuromorphic computing has primarily focused on processing unisensory information. This lack of emphasis on multisensory integration can be attributed to the absence of a miniaturized hardware platform capable of co-locating multiple sensing modalities and enabling in-sensor and near-sensor processing. In this study, this limitation is addressed by utilizing the chemo-sensing properties of graphene and the photo-sensing capability of monolayer molybdenum disulfide (MoS2 ) to create a multisensory platform for visuochemical integration. Additionally, the in-memory-compute capability of MoS2 memtransistors is leveraged to develop neural circuits that facilitate multisensory decision-making. The visuochemical integration platform is inspired by intricate courtship of Heliconius butterflies, where female species rely on the integration of visual cues (such as wing color) and chemical cues (such as pheromones) generated by the male butterflies for mate selection. The butterfly-inspired visuochemical integration platform has significant implications in both robotics and the advancement of neuromorphic computing, going beyond unisensory intelligence and information processing.
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Affiliation(s)
- Yikai Zheng
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Subir Ghosh
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
- Electrical Engineering, Penn State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA
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Fang W, Chen Y, Ding J, Yu Z, Masquelier T, Chen D, Huang L, Zhou H, Li G, Tian Y. SpikingJelly: An open-source machine learning infrastructure platform for spike-based intelligence. SCIENCE ADVANCES 2023; 9:eadi1480. [PMID: 37801497 PMCID: PMC10558124 DOI: 10.1126/sciadv.adi1480] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Accepted: 09/05/2023] [Indexed: 10/08/2023]
Abstract
Spiking neural networks (SNNs) aim to realize brain-inspired intelligence on neuromorphic chips with high energy efficiency by introducing neural dynamics and spike properties. As the emerging spiking deep learning paradigm attracts increasing interest, traditional programming frameworks cannot meet the demands of the automatic differentiation, parallel computation acceleration, and high integration of processing neuromorphic datasets and deployment. In this work, we present the SpikingJelly framework to address the aforementioned dilemma. We contribute a full-stack toolkit for preprocessing neuromorphic datasets, building deep SNNs, optimizing their parameters, and deploying SNNs on neuromorphic chips. Compared to existing methods, the training of deep SNNs can be accelerated 11×, and the superior extensibility and flexibility of SpikingJelly enable users to accelerate custom models at low costs through multilevel inheritance and semiautomatic code generation. SpikingJelly paves the way for synthesizing truly energy-efficient SNN-based machine intelligence systems, which will enrich the ecology of neuromorphic computing.
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Affiliation(s)
- Wei Fang
- School of Computer Science, Peking University, China
- Peng Cheng Laboratory, China
- School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, China
| | - Yanqi Chen
- School of Computer Science, Peking University, China
- Peng Cheng Laboratory, China
| | - Jianhao Ding
- School of Computer Science, Peking University, China
| | - Zhaofei Yu
- Institute for Artificial Intelligence, Peking University, China
| | - Timothée Masquelier
- Centre de Recherche Cerveau et Cognition (CERCO), UMR5549 CNRS–Université Toulouse 3, France
| | - Ding Chen
- Peng Cheng Laboratory, China
- Department of Computer Science and Engineering, Shanghai Jiao Tong University, China
| | - Liwei Huang
- School of Computer Science, Peking University, China
- Peng Cheng Laboratory, China
| | | | - Guoqi Li
- Institute of Automation, Chinese Academy of Sciences, China
- School of Artificial Intelligence, University of Chinese Academy of Sciences, China
| | - Yonghong Tian
- School of Computer Science, Peking University, China
- Peng Cheng Laboratory, China
- School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, China
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Guo Y, Duan W, Liu X, Wang X, Wang L, Duan S, Ma C, Li H. Generative complex networks within a dynamic memristor with intrinsic variability. Nat Commun 2023; 14:6134. [PMID: 37783711 PMCID: PMC10545788 DOI: 10.1038/s41467-023-41921-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Accepted: 09/21/2023] [Indexed: 10/04/2023] Open
Abstract
Artificial neural networks (ANNs) have gained considerable momentum in the past decade. Although at first the main task of the ANN paradigm was to tune the connection weights in fixed-architecture networks, there has recently been growing interest in evolving network architectures toward the goal of creating artificial general intelligence. Lagging behind this trend, current ANN hardware struggles for a balance between flexibility and efficiency but cannot achieve both. Here, we report on a novel approach for the on-demand generation of complex networks within a single memristor where multiple virtual nodes are created by time multiplexing and the non-trivial topological features, such as small-worldness, are generated by exploiting device dynamics with intrinsic cycle-to-cycle variability. When used for reservoir computing, memristive complex networks can achieve a noticeable increase in memory capacity a and respectable performance boost compared to conventional reservoirs trivially implemented as fully connected networks. This work expands the functionality of memristors for ANN computing.
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Affiliation(s)
- Yunpeng Guo
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China
| | - Wenrui Duan
- School of Instrument Science and Opto Electronics Engineering, Laboratory of Intelligent Microsystems, Beijing Information Science & Technology University, Beijing, 100101, China.
| | - Xue Liu
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China.
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.
| | - Xinxin Wang
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China
| | - Lidan Wang
- School of Artificial Intelligence, Southwest University, Chongqing, 400715, China
| | - Shukai Duan
- School of Artificial Intelligence, Southwest University, Chongqing, 400715, China
| | - Cheng Ma
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China.
| | - Huanglong Li
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China.
- Chinese Institute for Brain Research, Beijing, 102206, China.
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Sadaf MUK, Sakib NU, Pannone A, Ravichandran H, Das S. A bio-inspired visuotactile neuron for multisensory integration. Nat Commun 2023; 14:5729. [PMID: 37714853 PMCID: PMC10504285 DOI: 10.1038/s41467-023-40686-z] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 08/03/2023] [Indexed: 09/17/2023] Open
Abstract
Multisensory integration is a salient feature of the brain which enables better and faster responses in comparison to unisensory integration, especially when the unisensory cues are weak. Specialized neurons that receive convergent input from two or more sensory modalities are responsible for such multisensory integration. Solid-state devices that can emulate the response of these multisensory neurons can advance neuromorphic computing and bridge the gap between artificial and natural intelligence. Here, we introduce an artificial visuotactile neuron based on the integration of a photosensitive monolayer MoS2 memtransistor and a triboelectric tactile sensor which minutely captures the three essential features of multisensory integration, namely, super-additive response, inverse effectiveness effect, and temporal congruency. We have also realized a circuit which can encode visuotactile information into digital spiking events, with probability of spiking determined by the strength of the visual and tactile cues. We believe that our comprehensive demonstration of bio-inspired and multisensory visuotactile neuron and spike encoding circuitry will advance the field of neuromorphic computing, which has thus far primarily focused on unisensory intelligence and information processing.
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Affiliation(s)
| | - Najam U Sakib
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | | | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA.
- Electrical Engineering, Penn State University, University Park, PA, 16802, USA.
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
- Materials Research Institute, Penn State University, University Park, PA, 16802, USA.
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