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Zou T, Heo S, Byeon G, Yoo S, Kim M, Reo Y, Kim S, Liu A, Noh YY. Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor. ACS NANO 2024; 18:13849-13857. [PMID: 38748609 DOI: 10.1021/acsnano.4c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
With the demand for high-performance and miniaturized semiconductor devices continuously rising, the development of innovative tunneling transistors via efficient stacking methods using two-dimensional (2D) building blocks has paramount importance in the electronic industry. Hence, 2D semiconductors with atomically thin geometries hold significant promise for advancements in electronics. In this study, we introduced tunneling memtransistors with a thin-film heterostructure composed of 2D semiconducting MoS2 and WSe2. Devices with the dual function of tuning and memory operation were realized by the gate-regulated modulation of the barrier height at the heterojunction and manipulation of intrinsic defects within the exfoliated nanoflakes using solution processes. Further, our investigation revealed extensive edge defects and four distinct defect types, namely monoselenium vacancies, diselenium vacancies, tungsten vacancies, and tungsten adatoms, in the interior of electrochemically exfoliated WSe2 nanoflakes. Additionally, we constructed complementary metal-oxide semiconductor-based logic-in-memory devices with a small static power in the range of picowatts using the developed tunneling memtransistors, demonstrating a promising approach for next-generation low-power nanoelectronics.
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Affiliation(s)
- Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Seongmin Heo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Gwon Byeon
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Soohwan Yoo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Mingyu Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Soonhyo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Ao Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
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2
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Gabbett C, Kelly AG, Coleman E, Doolan L, Carey T, Synnatschke K, Liu S, Dawson A, O'Suilleabhain D, Munuera J, Caffrey E, Boland JB, Sofer Z, Ghosh G, Kinge S, Siebbeles LDA, Yadav N, Vij JK, Aslam MA, Matkovic A, Coleman JN. Understanding how junction resistances impact the conduction mechanism in nano-networks. Nat Commun 2024; 15:4517. [PMID: 38806479 PMCID: PMC11133347 DOI: 10.1038/s41467-024-48614-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 05/02/2024] [Indexed: 05/30/2024] Open
Abstract
Networks of nanowires, nanotubes, and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the resistance between the particles, often referred to as the junction resistance. Minimising the junction resistance has proven to be challenging, partly because it is difficult to measure. Here, we develop a simple model for electrical conduction in networks of 1D or 2D nanomaterials that allows us to extract junction and nanoparticle resistances from particle-size-dependent DC network resistivity data. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ω for silver nanosheets to 24 GΩ for WS2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be obtained simultaneously from AC impedance spectra of semiconducting nanosheet networks. Through our model, we use the impedance data to directly link the high mobility of aligned networks of electrochemically exfoliated MoS2 nanosheets (≈ 7 cm2 V-1 s-1) to low junction resistances of ∼2.3 MΩ. Temperature-dependent impedance measurements also allow us to comprehensively investigate transport mechanisms within the network and quantitatively differentiate intra-nanosheet phonon-limited bandlike transport from inter-nanosheet hopping.
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Affiliation(s)
- Cian Gabbett
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Adam G Kelly
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- i3N/CENIMAT, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516, Caparica, Portugal
| | - Emmet Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Tian Carey
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Shixin Liu
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Anthony Dawson
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Domhnall O'Suilleabhain
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Jose Munuera
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
- Department of Physics, Faculty of Sciences, University of Oviedo, C/ Leopoldo Calvo Sotelo, 18, 33007, Oviedo, Asturias, Spain
| | - Eoin Caffrey
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - John B Boland
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Goutam Ghosh
- Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, NL-2629, HZ, Delft, The Netherlands
| | - Sachin Kinge
- Materials Research & Development, Toyota Motor Europe, B1930, Zaventem, Belgium
| | - Laurens D A Siebbeles
- Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, NL-2629, HZ, Delft, The Netherlands
| | - Neelam Yadav
- Department of Electronic & Electrical Engineering, Trinity College Dublin 2, Dublin 2, Ireland
| | - Jagdish K Vij
- Department of Electronic & Electrical Engineering, Trinity College Dublin 2, Dublin 2, Ireland
| | - Muhammad Awais Aslam
- Chair of Physics, Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria
| | - Aleksandar Matkovic
- Chair of Physics, Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland.
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3
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Li Z, Bretscher H, Rao A. Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. NANOSCALE 2024; 16:9728-9741. [PMID: 38700268 DOI: 10.1039/d3nr06296a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.
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Affiliation(s)
- Zhaojun Li
- Solid State Physics, Department of Materials Science and Engineering, Uppsala University, 75103 Uppsala, Sweden.
| | - Hope Bretscher
- The Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE, Cambridge, UK
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4
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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5
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Zhao M, Casiraghi C, Parvez K. Electrochemical exfoliation of 2D materials beyond graphene. Chem Soc Rev 2024; 53:3036-3064. [PMID: 38362717 DOI: 10.1039/d3cs00815k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
After the discovery of graphene in 2004, the field of atomically thin crystals has exploded with the discovery of thousands of 2-dimensional materials (2DMs) with unique electronic and optical properties, by making them very attractive for a broad range of applications, from electronics to energy storage and harvesting, and from sensing to biomedical applications. In order to integrate 2DMs into practical applications, it is crucial to develop mass scalable techniques providing crystals of high quality and in large yield. Electrochemical exfoliation is one of the most promising methods for producing 2DMs, as it enables quick and large-scale production of solution processable nanosheets with a thickness well below 10 layers and lateral size above 1 μm. Originally, this technique was developed for the production of graphene; however, in the last few years, this approach has been successfully extended to other 2DMs, such as transition metal dichalcogenides, black phosphorous, hexagonal boron nitride, MXenes and many other emerging 2D materials. This review first provides an introduction to the fundamentals of electrochemical exfoliation and then it discusses the production of each class of 2DMs, by introducing their properties and giving examples of applications. Finally, a summary and perspective are given to address some of the challenges in this research area.
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Affiliation(s)
- Minghao Zhao
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
| | - Cinzia Casiraghi
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
| | - Khaled Parvez
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
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6
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Sinnott AD, Kelly A, Gabbett C, Munuera J, Doolan L, Möbius M, Ippolito S, Samorì P, Coleman JN, Cross GLW. Mechanical Properties of Conducting Printed Nanosheet Network Thin Films Under Uniaxial Compression. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306954. [PMID: 37812735 DOI: 10.1002/adma.202306954] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 09/17/2023] [Indexed: 10/11/2023]
Abstract
Thin film networks of solution processed nanosheets show remarkable promise for use in a broad range of applications including strain sensors, energy storage, printed devices, textile electronics, and more. While it is known that their electronic properties rely heavily on their morphology, little is known of their mechanical nature, a glaring omission given the effect mechanical deformation has on the morphology of porous systems and the promise of mechanical post processing for tailored properties. Here, this work employs a recent advance in thin film mechanical testing called the Layer Compression Test to perform the first in situ analysis of printed nanosheet network compression. Due to the well-defined deformation geometry of this unique test, this work is able to explore the out-of-plane elastic, plastic, and creep deformation in these systems, extracting properties of elastic modulus, plastic yield, viscoelasticity, tensile failure and sheet bending vs. slippage under both out of plane uniaxial compression and tension. This work characterizes these for a range of networks of differing porosities and sheet sizes, for low and high compression, as well as the effect of chemical cross linking. This work explores graphene and MoS2 networks, from which the results can be extended to printed nanosheet networks as a whole.
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Affiliation(s)
- Aaron D Sinnott
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Adam Kelly
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Cian Gabbett
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Jose Munuera
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Luke Doolan
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Matthias Möbius
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Stefano Ippolito
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
| | - Jonathan N Coleman
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
| | - Graham L W Cross
- Trinity College Dublin, CRANN, 43 Pearse St, Dublin 2, D02 W085, Ireland
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7
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Guo H, Montes-García V, Peng H, Samorì P, Ciesielski A. Molecular Connectors Boosting the Performance of MoS 2 Cathodes in Zinc-Ion Batteries. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310338. [PMID: 38412411 DOI: 10.1002/smll.202310338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Revised: 02/06/2024] [Indexed: 02/29/2024]
Abstract
Zinc-ion batteries (ZIBs) are promising energy storage systems due to high energy density, low-cost, and abundant availability of zinc as a raw material. However, the greatest challenge in ZIBs research is lack of suitable cathode materials that can reversibly intercalate Zn2+ ions. 2D layered materials, especially MoS2 -based, attract tremendous interest due to large surface area and ability to intercalate/deintercalate ions. Unfortunately, pristine MoS2 obtained by traditional protocols such as chemical exfoliation or hydrothermal/solvothermal methods exhibits limited electronic conductivity and poor chemical stability upon charge/discharge cycling. Here, a novel molecular strategy to boost the electrochemical performance of MoS2 cathode materials for aqueous ZIBs is reported. The use of dithiolated conjugated molecular pillars, that is, 4,4'-biphenyldithiols, enables to heal defects and crosslink the MoS2 nanosheets, yielding covalently bridged networks (MoS2 -SH2) with improved ionic and electronic conductivity and electrochemical performance. In particular, MoS2 -SH2 electrodes display high specific capacity of 271.3 mAh g-1 at 0.1 A g-1 , high energy density of 279 Wh kg-1 , and high power density of 12.3 kW kg-1 . With its outstanding rate capability (capacity of 148.1 mAh g-1 at 10 A g-1 ) and stability (capacity of 179 mAh g-1 after 1000 cycles), MoS2 -SH2 electrodes outperform other MoS2 -based electrodes in ZIBs.
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Affiliation(s)
- Haipeng Guo
- Université de Strasbourg, CNRS, ISIS 8 allée Gaspard Monge, Strasbourg, 67000, France
| | | | - Haijun Peng
- Université de Strasbourg, CNRS, ISIS 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Artur Ciesielski
- Université de Strasbourg, CNRS, ISIS 8 allée Gaspard Monge, Strasbourg, 67000, France
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8
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Rodríguez González MC, Ibarburu IM, Rebanal C, Sulleiro MV, Sasikumar R, Naranjo A, Ayani CG, Garnica M, Calleja F, Pérez EM, Vázquez de Parga AL, De Feyter S. Clicking beyond suspensions: understanding thiol-ene chemistry on solid-supported MoS 2. NANOSCALE 2024; 16:3749-3754. [PMID: 38298095 DOI: 10.1039/d3nr05236b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Molecular functionalization of MoS2 has attracted a lot of attention due to its potential to afford fine-tuned hybrid materials that benefit from the power of synthetic chemistry and molecular design. Here, we report on the on-surface reaction of maleimides on bulk and molecular beam epitaxy grown single-layer MoS2, both in ambient conditions as well as ultrahigh vacuum using scanning probe microscopy.
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Affiliation(s)
- Miriam C Rodríguez González
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.
- Área de Química Física, Departamento de Química, Instituto de Materiales y Nanotecnología (IMN), Universidad de La Laguna (ULL), 38200 La Laguna, Spain
| | - Iván M Ibarburu
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
| | - Clara Rebanal
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
| | | | - Rahul Sasikumar
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.
| | | | - Cosme G Ayani
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
| | | | | | | | - Amadeo L Vázquez de Parga
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
- IMDEA Nanociencia, Faraday 9, 28049 Madrid, Spain.
- IFIMAC, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain
| | - Steven De Feyter
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.
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9
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Morabito F, Synnatschke K, Mehew JD, Varghese S, Sayers CJ, Folpini G, Petrozza A, Cerullo G, Tielrooij KJ, Coleman J, Nicolosi V, Gadermaier C. Long lived photogenerated charge carriers in few-layer transition metal dichalcogenides obtained from liquid phase exfoliation. NANOSCALE ADVANCES 2024; 6:1074-1083. [PMID: 38356640 PMCID: PMC10863726 DOI: 10.1039/d3na00862b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 11/26/2023] [Indexed: 02/16/2024]
Abstract
Semiconducting transition metal dichalcogenides are important optoelectronic materials thanks to their intense light-matter interaction and wide selection of fabrication techniques, with potential applications in light harvesting and sensing. Crucially, these applications depend on the lifetimes and recombination dynamics of photogenerated charge carriers, which have primarily been studied in monolayers obtained from labour-intensive mechanical exfoliation or costly chemical vapour deposition. On the other hand, liquid phase exfoliation presents a high throughput and cost-effective method to produce dispersions of mono- and few-layer nanosheets. This approach allows for easy scalability and enables the subsequent processing and formation of macroscopic films directly from the liquid phase. Here, we use transient absorption spectroscopy and spatiotemporally resolved pump-probe microscopy to study the charge carrier dynamics in tiled nanosheet films of MoS2 and WS2 deposited from the liquid phase using an adaptation of the Langmuir-Schaefer technique. We find an efficient photogeneration of charge carriers with lifetimes of several nanoseconds, which we ascribe to stabilisation at nanosheet edges. These findings provide scope for photocatalytic and photodetector applications, where long-lived charge carriers are crucial, and suggest design strategies for photovoltaic devices.
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Affiliation(s)
- Floriana Morabito
- Area Science Park Basovizza S.S. 14 Km 163.5 34149 Trieste Italy
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
- CNR-IOM, Consiglio Nazionale delle Ricerche Istituto Officina dei Materiali Trieste Italy
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
| | - Sebin Varghese
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
| | - Charles James Sayers
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Giulia Folpini
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
| | - Annamaria Petrozza
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
| | - Giulio Cerullo
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
- TU Eindhoven, Department of Applied Physics Den Dolech 2 5612 AZ Eindhoven The Netherlands
| | - Jonathan Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Valeria Nicolosi
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Christoph Gadermaier
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
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10
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Beura SK, Panigrahi AR, Yadav P, Palacio I, Casero E, Quintana C, Singh J, Singh MK, Martín Gago JA, Singh SK. Harnessing two-dimensional nanomaterials for diagnosis and therapy in neurodegenerative diseases: Advances, challenges and prospects. Ageing Res Rev 2024; 94:102205. [PMID: 38272267 DOI: 10.1016/j.arr.2024.102205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 12/07/2023] [Accepted: 01/19/2024] [Indexed: 01/27/2024]
Abstract
Neurodegenerative diseases (NDDs) are specific brain disorders characterized by the progressive deterioration of different motor activities as well as several cognitive functions. Current conventional therapeutic options for NDDs are limited in addressing underlying causes, delivering drugs to specific neuronal targets, and promoting tissue repair following brain injury. Due to the paucity of plausible theranostic options for NDDs, nanobiotechnology has emerged as a promising field, offering an interdisciplinary approach to create nanomaterials with high diagnostic and therapeutic efficacy for these diseases. Recently, two-dimensional nanomaterials (2D-NMs) have gained significant attention in biomedical and pharmaceutical applications due to their precise drug-loading capabilities, controlled release mechanisms, enhanced stability, improved biodegradability, and reduced cell toxicity. Although various studies have explored the diagnostic and therapeutic potential of different nanomaterials in NDDs, there is a lack of comprehensive review addressing the theranostic applications of 2D-NMs in these neuronal disorders. Therefore, this concise review aims to provide a state-of-the-art understanding of the need for these ultrathin 2D-NMs and their potential applications in biosensing and bioimaging, targeted drug delivery, tissue engineering, and regenerative medicine for NDDs.
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Affiliation(s)
- Samir Kumar Beura
- Department of Zoology, School of Basic Sciences, Central University of Punjab, Ghudda, Bathinda, Punjab 151401, India
| | | | - Pooja Yadav
- Department of Zoology, School of Basic Sciences, Central University of Punjab, Ghudda, Bathinda, Punjab 151401, India
| | - Irene Palacio
- Instituto de Ciencia de Materiales de Madrid (CSIC). c/ Sor Juana Inés de la Cruz 3. Campus de Excelencia de la Universidad Autónoma de Madrid, 28049, Spain
| | - Elena Casero
- Departamento de Química Analítica y Análisis Instrumental. Facultad de Ciencias. Universidad Autónoma de Madrid. c/ Francisco Tomás y Valiente, Nº 7. Campus de Excelencia de la Universidad Autónoma de Madrid, 28049, Spain
| | - Carmen Quintana
- Departamento de Química Analítica y Análisis Instrumental. Facultad de Ciencias. Universidad Autónoma de Madrid. c/ Francisco Tomás y Valiente, Nº 7. Campus de Excelencia de la Universidad Autónoma de Madrid, 28049, Spain
| | - Jyoti Singh
- Department of Applied Agriculture, School of Basic Sciences, Central University of Punjab, Ghudda, Bathinda, Punjab 151401, India
| | - Manoj Kumar Singh
- Department of Physics, School of Engineering and Technology, Central University of Haryana, Jant-Pali, Mahendragarh, Haryana 123031, India
| | - Jose A Martín Gago
- Instituto de Ciencia de Materiales de Madrid (CSIC). c/ Sor Juana Inés de la Cruz 3. Campus de Excelencia de la Universidad Autónoma de Madrid, 28049, Spain.
| | - Sunil Kumar Singh
- Department of Zoology, School of Basic Sciences, Central University of Punjab, Ghudda, Bathinda, Punjab 151401, India.
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11
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Joung SY, Yim H, Lee D, Shim J, Yoo SY, Kim YH, Kim JS, Kim H, Hyeong SK, Kim J, Noh YY, Bae S, Park MJ, Choi JW, Lee CH. All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric. ACS NANO 2024; 18:1958-1968. [PMID: 38181200 DOI: 10.1021/acsnano.3c06972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2024]
Abstract
Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10-11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.
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Affiliation(s)
- Su-Yeon Joung
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Haena Yim
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Donghun Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jaehyung Shim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - So Yeon Yoo
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Yeon Ho Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jin Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Hyunjun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seok-Ki Hyeong
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
| | - Junhee Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Sukang Bae
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54896, Republic of Korea
| | - Myung Jin Park
- National Institute for Nanomaterials Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea
| | - Ji-Won Choi
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
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12
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Feria DN, Huang QZ, Yeh CS, Lin SX, Lin DY, Tseng BC, Lian JT, Lin TY. Facile synthesis of β-Ga 2O 3based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides. NANOTECHNOLOGY 2024; 35:125603. [PMID: 38064741 DOI: 10.1088/1361-6528/ad13bf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Accepted: 12/08/2023] [Indexed: 01/05/2024]
Abstract
Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizingβ-Ga2O3via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesizedβ-Ga2O3was fabricated as thin film transistors (TFT). Theβ-Ga2O3TFT fabricated exhibits remarkable electron mobility (1.28 cm2Vs-1) and a good current ratio (Ion/Ioff) of 2.06 × 105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene inβ-Ga2O3TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that theβ-Ga2O3networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.
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Affiliation(s)
- Denice Navat Feria
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Qi-Zhi Huang
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Chun-Shao Yeh
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Shi-Xian Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua, 500207, Taiwan
| | - Bo-Chang Tseng
- Graduate Institute of Photonics, National Changhua University of Education, Changhua, 500207, Taiwan
| | - Jan-Tian Lian
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Tai-Yuan Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
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13
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Zhuravlova A, Ricciardulli AG, Pakulski D, Gorczyński A, Kelly A, Coleman JN, Ciesielski A, Samorì P. High Selectivity and Sensitivity in Chemiresistive Sensing of Co(II) Ions with Liquid-Phase Exfoliated Functionalized MoS 2 : A Supramolecular Approach. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2208100. [PMID: 37104823 DOI: 10.1002/smll.202208100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 03/31/2023] [Indexed: 06/19/2023]
Abstract
Chemical sensing of water contamination by heavy metal ions is key as it represents a most severe environmental problem. Liquid-phase exfoliated two-dimensional (2D) transition metal dichalcogenides (TMDs) are suitable candidates for chemical sensing thanks to their high surface-to-volume ratio, sensitivity, unique electrical characteristics, and scalability. However, TMDs lack selectivity due to nonspecific analyte-nanosheet interactions. To overcome this drawback, defect engineering enables controlled functionalization of 2D TMDs. Here, ultrasensitive and selective sensors of cobalt(II) ions via the covalent functionalization of defect-rich MoS2 flakes with a specific receptor, 2,2':6',2″-terpyridine-4'-thiol is developed. A continuous network is assembled by healing of MoS2 sulfur vacancies in a tailored microfluidic approach, enabling high control over the assembly of thin and large hybrid films. The Co2+ cations complexation represents a powerful gauge for low concentrations of cationic species which can be best monitored in a chemiresisitive ion sensor, featuring a 1 pm limit of detection, sensing in a broad concentration range (1 pm - 1 µm) and sensitivity as high as 0.308 ± 0.010 lg([Co2+ ])-1 combined with a high selectivity towards Co2+ over K+ , Ca2+ , Mn2+ , Cu2+ , Cr3+ , and Fe3+ cations. This supramolecular approach based on highly specific recognition can be adapted for sensing other analytes through specific ad-hoc receptors.
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Affiliation(s)
- Anna Zhuravlova
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | | | - Dawid Pakulski
- Adam Mickiewicz University Foundation, Poznań Science and Technology Park, Rubież 46, Poznań, 61-612, Poland
- Centre for Advanced Technologies, Adam Mickiewicz University, Uniwersytetu Poznańskiego 10, Poznań, 61-614, Poland
| | - Adam Gorczyński
- Faculty of Chemistry, Adam Mickiewicz University in Poznan, Uniwersytetu Poznanskiego 8, Poznan, 61-614, Poland
| | - Adam Kelly
- School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Jonathan N Coleman
- School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Artur Ciesielski
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
- Centre for Advanced Technologies, Adam Mickiewicz University, Uniwersytetu Poznańskiego 10, Poznań, 61-614, Poland
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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14
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Xu K, Hung SW, Si W, Wu Y, Huo C, Yu P, Zhong X, Zhu J. Topotactically transformable antiphase boundaries with enhanced ionic conductivity. Nat Commun 2023; 14:7382. [PMID: 37968326 PMCID: PMC10651924 DOI: 10.1038/s41467-023-43086-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Accepted: 10/30/2023] [Indexed: 11/17/2023] Open
Abstract
Engineering lattice defects have emerged as a promising approach to effectively modulate the functionality of devices. Particularly, antiphase boundaries (APBs) as planar defects have been considered major obstacles to optimizing the ionic conductivity of mixed ionic-electronic conductors (MIECs) in solid oxide fuel applications. Here our study identifies topotactically transformable APBs (tt-APBs) at the atomic level and demonstrates that they exhibit higher ionic conductivity at elevated temperatures as compared to perfect domains. In-situ observation at the atomic scale tracks dynamic oxygen migration across these tt-APBs, where the abundant interstitial sites between tetrahedrons facilitate the ionic migration. Furthermore, annealing in an oxidized atmosphere can lead to the formation of interstitial oxygen at these APBs. These pieces of evidence clearly clarify that the tt-APBs can contribute to oxygen conductivity as anion diffusion channels, while the topotactically non-transformable APBs cannot. The topotactic transformability opens the way of defect engineering strategies for improving ionic transportation in MIECs.
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Grants
- X.Y. Z is grateful for the financial supports from National Natural Science Foundation of China (52171014, 52011530124, 52025024), Science, Technology and Innovation Commission of Shenzhen Municipality (SGDX20210823104200001, JCYJ20210324134402007, HZQB-KCZYB-2020031), the Sino-German Mobility Programme by the Sino-German Center for Research Promotion (M-0265), Innovation and Technology Fund (ITS/365/21), Science and Technology Department of Sichuan Province (2021YFSY0016), the Research Grants Council of Hong Kong Special Administrative Region, China (Project No. E-CityU101/20, 11302121, 11309822, G-CityU102/20), the European Research Council (Grant No. 856538, project “3D MAGiC”), CityU Strategic Interdisciplinary Research Grant (7020016, 7020043), the City University of Hong Kong (Projects no. 9610484, 9680291, 9678288, 9610607), the City University of Hong Kong Shenzhen Research Institute and City University of Hong Kong Chengdu Research Institute.
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Affiliation(s)
- Kun Xu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, PR China.
- Department of Mechanical Engineering, Stanford University, Palo Alto, 94305, USA.
| | - Shih-Wei Hung
- TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR, PR China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen, 518048, PR China
| | - Wenlong Si
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, PR China
- Ji Hua Laboratory, Foshang, Guangdong, 0757, PR China
| | - Yongshun Wu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, PR China
| | - Chuanrui Huo
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, PR China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, PR China
| | - Xiaoyan Zhong
- TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR, PR China.
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen, 518048, PR China.
- Nanomanufacturing Laboratory (NML), Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, PR China.
- Chengdu Research Institute, City University of Hong Kong, Chengdu, 610200, PR China.
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, PR China.
- Ji Hua Laboratory, Foshang, Guangdong, 0757, PR China.
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15
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Sozen Y, Riquelme JJ, Xie Y, Munuera C, Castellanos-Gomez A. High-Throughput Mechanical Exfoliation for Low-Cost Production of van der Waals Nanosheets. SMALL METHODS 2023; 7:e2300326. [PMID: 37322554 DOI: 10.1002/smtd.202300326] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Revised: 05/11/2023] [Indexed: 06/17/2023]
Abstract
A method is presented for scaling up the production of flakes of van der Waals materials via mechanical exfoliation. Using a roll-to-roll setup and an automatized, massive parallel exfoliation process, adhesive tapes with a high density of nanosheets of van der Waals materials are produced. The technique allows for obtaining a good trade-off between large lateral size and excellent area scalability, while also maintaining low cost. The potential of the method is demonstrated through the successful fabrication of field effect transistors and flexible photodetectors in large batches. This low-cost method to produce large area films out of mechanically exfoliated flakes is very general, and it can be applied to a variety of substrates and van der Waals materials and, moreover, it can be used to combine different van der Waals materials on top of each other. Therefore, it is believed that this production method opens an interesting avenue for fabrication of low-cost devices while maintaining a good scalability and performance.
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Affiliation(s)
- Yigit Sozen
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
| | - Juan J Riquelme
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
| | - Yong Xie
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Carmen Munuera
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain
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16
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Han B, Gali SM, Dai S, Beljonne D, Samorì P. Isomer Discrimination via Defect Engineering in Monolayer MoS 2. ACS NANO 2023; 17:17956-17965. [PMID: 37704191 DOI: 10.1021/acsnano.3c04194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.
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Affiliation(s)
- Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
| | - Sai Manoj Gali
- Université de Mons, Laboratory for Chemistry of Novel Materials, Place du Parc 20, Mons 7000, Belgium
| | - Shuting Dai
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - David Beljonne
- Université de Mons, Laboratory for Chemistry of Novel Materials, Place du Parc 20, Mons 7000, Belgium
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
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17
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Liu X, Niu Y, Jin D, Zeng J, Li W, Wang L, Hou Z, Feng Y, Li H, Yang H, Lee YK, French PJ, Wang Y, Zhou G. Patching sulfur vacancies: A versatile approach for achieving ultrasensitive gas sensors based on transition metal dichalcogenides. J Colloid Interface Sci 2023; 649:909-917. [PMID: 37390538 DOI: 10.1016/j.jcis.2023.06.092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 06/07/2023] [Accepted: 06/14/2023] [Indexed: 07/02/2023]
Abstract
Transition metal dichalcogenides (TMDCs) garner significant attention for their potential to create high-performance gas sensors. Despite their favorable properties such as tunable bandgap, high carrier mobility, and large surface-to-volume ratio, the performance of TMDCs devices is compromised by sulfur vacancies, which reduce carrier mobility. To mitigate this issue, we propose a simple and universal approach for patching sulfur vacancies, wherein thiol groups are inserted to repair sulfur vacancies. The sulfur vacancy patching (SVP) approach is applied to fabricate a MoS2-based gas sensor using mechanical exfoliation and all-dry transfer methods, and the resulting 4-nitrothiophenol (4NTP) repaired molybdenum disulfide (4NTP-MoS2) is prepared via a sample solution process. Our results show that 4NTP-MoS2 exhibits higher response (increased by 200 %) to ppb-level NO2 with shorter response/recovery times (61/82 s) and better selectivity at 25 °C compared to pristine MoS2. Notably, the limit of detection (LOD) toward NO2 of 4NTP-MoS2 is 10 ppb. Kelvin probe force microscopy (KPFM) and density functional theory (DFT) reveal that the improved gas sensing performance is mainly attributed to the 4NTP-induced n-doping effect on MoS2 and the corresponding increment of surface absorption energy to NO2. Additionally, our 4NTP-induced SVP approach is universal for enhancing gas sensing properties of other TMDCs, such as MoSe2, WS2, and WSe2.
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Affiliation(s)
- Xiangcheng Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Yue Niu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China; School of Physical Sciences, Great Bay University, Dongguan 523000, PR China.
| | - Duo Jin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Junwei Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Wanjiang Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Lirong Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics South China Normal University, Guangzhou 510006, PR China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics South China Normal University, Guangzhou 510006, PR China
| | - Yancong Feng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Haihong Yang
- Department of Thoracic Oncology, State Key Laboratory of Respiratory Diseases, The First Affiliated Hospital of Guangzhou Medical University, Guangzhou 510006, PR China
| | - Yi-Kuen Lee
- Department of Mechanical & Aerospace Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong Special Administrative Region
| | - Paddy J French
- BE Laboratory, EWI, Delft University of Technology, Delft 2628CD, the Netherlands
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China.
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
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18
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Yang S, Chen W, Sa B, Guo Z, Zheng J, Pei J, Zhan H. Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS 2. NANO LETTERS 2023; 23:3070-3077. [PMID: 36995751 DOI: 10.1021/acs.nanolett.3c00771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Triggered by the expanding demands of semiconductor devices, strain engineering of two-dimensional transition metal dichalcogenides (TMDs) has garnered considerable research interest. Through steady-state measurements, strain has been proved in terms of its modulation of electronic energy bands and optoelectronic properties in TMDs. However, the influence of strain on the spin-orbit coupling as well as its related valley excitonic dynamics remains elusive. Here, we demonstrate the effect of strain on the excitonic dynamics of monolayer WS2 via steady-state fluorescence and transient absorption spectroscopy. Combined with theoretical calculations, we found that tensile strain can reduce the spin-splitting value of the conduction band and lead to transitions between different exciton states via spin-flip mechanism. Our findings suggest that the spin-flip process is strain-dependent, provides a reference for application of valleytronic devices, where tensile strain is usually existing during their design and fabrication.
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Affiliation(s)
- Shichao Yang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenwei Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Zhiyong Guo
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jiajie Pei
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovatation Laboratory for Optoelectronic Information, Fuzhou 350108, Fujian, Peoples Republic of China
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19
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Ippolito S, Urban F, Zheng W, Mazzarisi O, Valentini C, Kelly AG, Gali SM, Bonn M, Beljonne D, Corberi F, Coleman JN, Wang HI, Samorì P. Unveiling Charge-Transport Mechanisms in Electronic Devices Based on Defect-Engineered MoS 2 Covalent Networks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211157. [PMID: 36648210 DOI: 10.1002/adma.202211157] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 01/07/2023] [Indexed: 06/17/2023]
Abstract
Device performance of solution-processed 2D semiconductors in printed electronics has been limited so far by structural defects and high interflake junction resistance. Covalently interconnected networks of transition metal dichalcogenides potentially represent an efficient strategy to overcome both limitations simultaneously. Yet, the charge-transport properties in such systems have not been systematically researched. Here, the charge-transport mechanisms of printed devices based on covalent MoS2 networks are unveiled via multiscale analysis, comparing the effects of aromatic versus aliphatic dithiolated linkers. Temperature-dependent electrical measurements reveal hopping as the dominant transport mechanism: aliphatic systems lead to 3D variable range hopping, unlike the nearest neighbor hopping observed for aromatic linkers. The novel analysis based on percolation theory attributes the superior performance of devices functionalized with π-conjugated molecules to the improved interflake electronic connectivity and formation of additional percolation paths, as further corroborated by density functional calculations. Valuable guidelines for harnessing the charge-transport properties in MoS2 devices based on covalent networks are provided.
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Affiliation(s)
- Stefano Ippolito
- ISIS UMR 7006, Université de Strasbourg, CNRS, 8 Allée Gaspard Monge, Strasbourg, 67000, France
| | - Francesca Urban
- ISIS UMR 7006, Université de Strasbourg, CNRS, 8 Allée Gaspard Monge, Strasbourg, 67000, France
| | - Wenhao Zheng
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Onofrio Mazzarisi
- Max Planck Institute for Mathematics in the Sciences, Inselstraße 22, 04103, Leipzig, Germany
| | - Cataldo Valentini
- ISIS UMR 7006, Université de Strasbourg, CNRS, 8 Allée Gaspard Monge, Strasbourg, 67000, France
| | - Adam G Kelly
- School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin 2, D02 K8N4, Ireland
| | - Sai Manoj Gali
- Laboratory for Chemistry of Novel Materials, Université de Mons, Place du Parc 20, 7000, Mons, Belgium
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - David Beljonne
- Laboratory for Chemistry of Novel Materials, Université de Mons, Place du Parc 20, 7000, Mons, Belgium
| | - Federico Corberi
- Department of Physics, University of Salerno, Via Giovanni Paolo II 132, 84084, Fisciano (SA), Italy
| | - Jonathan N Coleman
- School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin 2, D02 K8N4, Ireland
| | - Hai I Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Paolo Samorì
- ISIS UMR 7006, Université de Strasbourg, CNRS, 8 Allée Gaspard Monge, Strasbourg, 67000, France
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20
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Fu S, Jia X, Hassan AS, Zhang H, Zheng W, Gao L, Di Virgilio L, Krasel S, Beljonne D, Tielrooij KJ, Bonn M, Wang HI. Reversible Electrical Control of Interfacial Charge Flow across van der Waals Interfaces. NANO LETTERS 2023; 23:1850-1857. [PMID: 36799492 PMCID: PMC9999450 DOI: 10.1021/acs.nanolett.2c04795] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 02/12/2023] [Indexed: 06/18/2023]
Abstract
Bond-free integration of two-dimensional (2D) materials yields van der Waals (vdW) heterostructures with exotic optical and electronic properties. Manipulating the splitting and recombination of photogenerated electron-hole pairs across the vdW interface is essential for optoelectronic applications. Previous studies have unveiled the critical role of defects in trapping photogenerated charge carriers to modulate the photoconductive gain for photodetection. However, the nature and role of defects in tuning interfacial charge carrier dynamics have remained elusive. Here, we investigate the nonequilibrium charge dynamics at the graphene-WS2 vdW interface under electrochemical gating by operando optical-pump terahertz-probe spectroscopy. We report full control over charge separation states and thus photogating field direction by electrically tuning the defect occupancy. Our results show that electron occupancy of the two in-gap states, presumably originating from sulfur vacancies, can account for the observed rich interfacial charge transfer dynamics and electrically tunable photogating fields, providing microscopic insights for optimizing optoelectronic devices.
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Affiliation(s)
- Shuai Fu
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Xiaoyu Jia
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Aliaa S. Hassan
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Heng Zhang
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Wenhao Zheng
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Lei Gao
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
- School
of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
| | - Lucia Di Virgilio
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Sven Krasel
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - David Beljonne
- Laboratory
for Chemistry of Novel Materials, Université
de Mons, 20 Place du
Parc, 7000 Mons, Belgium
| | - Klaas-Jan Tielrooij
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), BIST & CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Mischa Bonn
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Hai I. Wang
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
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21
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Carey T, Cassidy O, Synnatschke K, Caffrey E, Garcia J, Liu S, Kaur H, Kelly AG, Munuera J, Gabbett C, O’Suilleabhain D, Coleman JN. High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides. ACS NANO 2023; 17:2912-2922. [PMID: 36720070 PMCID: PMC9933598 DOI: 10.1021/acsnano.2c11319] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Accepted: 01/26/2023] [Indexed: 06/18/2023]
Abstract
The investigation of high-mobility two-dimensional (2D) flakes beyond molybdenum disulfide (MoS2) will be necessary to create a library of high-mobility solution-processed networks that conform to substrates and remain functional over thousands of bending cycles. Here we report electrochemical exfoliation of large-aspect-ratio (>100) semiconducting flakes of tungsten diselenide (WSe2) and tungsten disulfide (WS2) as well as MoS2 as a comparison. We use Langmuir-Schaefer coating to achieve highly aligned and conformal flake networks, with minimal mesoporosity (∼2-5%), at low processing temperatures (120 °C) and without acid treatments. This allows us to fabricate electrochemical transistors in ambient air, achieving average mobilities of μMoS2 ≈ 11 cm2 V-1 s-1, μWS2 ≈ 9 cm2 V-1 s-1, and μWSe2 ≈ 2 cm2 V-1 s-1 with a current on/off ratios of Ion/Ioff ≈ 2.6 × 103, 3.4 × 103, and 4.2 × 104 for MoS2, WS2, and WSe2, respectively. Moreover, our transistors display threshold voltages near ∼0.4 V with subthreshold slopes as low as 182 mV/dec, which are essential factors in maintaining power efficiency and represent a 1 order of magnitude improvement in the state of the art. Furthermore, the performance of our WSe2 transistors is maintained on polyethylene terephthalate (PET) even after 1000 bending cycles at 1% strain.
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22
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Wang R, Luo S, Zheng R, Shangguan Y, Feng X, Zeng Q, Liang J, Chen Z, Li J, Yang D, Chen H. Interfacial Coordination Bonding-Assisted Redox Mechanism-Driven Highly Selective Precious Metal Recovery on Covalent-Functionalized Ultrathin 1T-MoS 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9331-9340. [PMID: 36780328 DOI: 10.1021/acsami.2c20802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Rational design of functional material interfaces with well-defined physico-chemical-driven forces is crucial for achieving highly efficient interfacial chemical reaction dynamics for resource recovery. Herein, via an interfacial structure engineering strategy, precious metal (PM) coordination-active pyridine groups have been successfully covalently integrated into ultrathin 1T-MoS2 (Py-MoS2). The constructed Py-MoS2 shows highly selective interfacial coordination bonding-assisted redox (ICBAR) functionality toward PM recycling. Py-MoS2 shows state-of-the-art high recovery selectivity toward Au3+ and Pd4+ within 13 metal cation mixture solutions. The related recycling capacity reaches up to 3343.00 and 2330.74 mg/g for Au3+ and Pd4+, respectively. More importantly, above 90% recovery efficiencies have been achieved in representative PMs containing electronic solid waste leachate, such as computer processing units (CPU) and spent catalysts. The ICBAR mechanism developed here paves the way for interface engineering of the well-documented functional materials toward highly efficient PM recovery.
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Affiliation(s)
- Ranhao Wang
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Siyuan Luo
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Renji Zheng
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yangzi Shangguan
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xuezhen Feng
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qiang Zeng
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiaxin Liang
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhijie Chen
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jing Li
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Dazhong Yang
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hong Chen
- Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
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23
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Tao X, Li Y, Yu L, Zhang Y, Han C, Yang Y, Qian H, Lu Z, Liu K. Two-Dimensional Polymer Networks Locking on Inorganic Nanoparticles. Angew Chem Int Ed Engl 2023; 62:e202216620. [PMID: 36534271 DOI: 10.1002/anie.202216620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2022] [Revised: 12/15/2022] [Accepted: 12/15/2022] [Indexed: 12/23/2022]
Abstract
Two-dimensional polymers (2DPs), single-layer networks of covalently linked monomers, show perspectives as membranes and in electronics. However, 2D polymerization of monomers in orthogonal directions limited the formation of 2DPs on nanoparticles (NPs) with high surface curvatures. Here we propose a high-curvature 2D polymerization to form a single-layer 2DP network as a non-contacting ligand on the surface of NPs for their stabilization and functionalization. The high-curvature 2D polymerization of amphiphilic Gemini monomers was conducted in situ on surfaces of NPs with various sizes, shapes, and materials, forming highly cross-linked 2DPs. Selective etching of core-shell NPs led to 2DPs as a non-contact ligand of yolk-shell structures with excellent shape retention and high NP-surface accessibility. In addition, by copolymerization, the 2DP ligands can covalently link to other functional molecules. This work promotes the development of 2DPs on NPs for their functional modification.
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Affiliation(s)
- Xingfu Tao
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yang Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Linxiuzi Yu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yinshu Zhang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Chenglong Han
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Yang Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Hujun Qian
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Zhongyuan Lu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Kun Liu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
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24
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Zou T, Kim HJ, Kim S, Liu A, Choi MY, Jung H, Zhu H, You I, Reo Y, Lee WJ, Kim YS, Kim CJ, Noh YY. High-Performance Solution-Processed 2D P-Type WSe 2 Transistors and Circuits through Molecular Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208934. [PMID: 36418776 DOI: 10.1002/adma.202208934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 11/05/2022] [Indexed: 06/16/2023]
Abstract
Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br2 is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br2 -doped WSe2 transistors show a field-effect hole mobility of more than 27 cm2 V-1 s-1 , and a high on/off current ratio of ≈107 , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe2 and n-type MoS2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (VDD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.
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Affiliation(s)
- Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Hyun-Jun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Soonhyo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Ao Liu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Haksoon Jung
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Huihui Zhu
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Insang You
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Woo-Ju Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Sung Kim
- Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
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25
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Zhu Z, Kim JS, Moody MJ, Lauhon LJ. Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors. ACS NANO 2023; 17:575-586. [PMID: 36573755 DOI: 10.1021/acsnano.2c09527] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.
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Affiliation(s)
- Zhehao Zhu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Joon-Seok Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
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26
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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27
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Kim S, Yoo H. Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits. MICROMACHINES 2022; 13:2258. [PMID: 36557558 PMCID: PMC9783209 DOI: 10.3390/mi13122258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 12/11/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. Despite these advantages, most efforts for thin-film transistors still remain at the level of unit devices, so the circuit level for practical use needs to be further developed. In this regard, this review revisits digital and analog thin-film circuits using carbon nanotubes (CNTs), organic electrochemical transistors (OECTs), organic semiconductors, metal oxides, and two-dimensional materials. This review also discusses how to integrate thin-film circuits at the unit device level and some key issues such as metal routing and interconnection. Challenges and opportunities are also discussed to pave the way for developing thin-film circuits and their practical applications.
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28
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Meloni M, Large MJ, González Domínguez JM, Victor-Román S, Fratta G, Istif E, Tomes O, Salvage JP, Ewels CP, Pelaez-Fernandez M, Arenal R, Benito A, Maser WK, King AAK, Ajayan PM, Ogilvie SP, Dalton AB. Explosive percolation yields highly-conductive polymer nanocomposites. Nat Commun 2022; 13:6872. [DOI: 10.1038/s41467-022-34631-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2022] [Accepted: 11/01/2022] [Indexed: 11/13/2022] Open
Abstract
AbstractExplosive percolation is an experimentally-elusive phenomenon where network connectivity coincides with onset of an additional modification of the system; materials with correlated localisation of percolating particles and emergent conductive paths can realise sharp transitions and high conductivities characteristic of the explosively-grown network. Nanocomposites present a structurally- and chemically-varied playground to realise explosive percolation in practically-applicable systems but this is yet to be exploited by design. Herein, we demonstrate composites of graphene oxide and synthetic polymer latex which form segregated networks, leading to low percolation threshold and localisation of conductive pathways. In situ reduction of the graphene oxide at temperatures of <150 °C drives chemical modification of the polymer matrix to produce species with phenolic groups, which are known crosslinking agents. This leads to conductivities exceeding those of dense-packed networks of reduced graphene oxide, illustrating the potential of explosive percolation by design to realise low-loading composites with dramatically-enhanced electrical transport properties.
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Liu A, Zhu H, Zou T, Reo Y, Ryu GS, Noh YY. Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics. Nat Commun 2022; 13:6372. [PMID: 36289230 PMCID: PMC9605968 DOI: 10.1038/s41467-022-34119-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 10/13/2022] [Indexed: 11/09/2022] Open
Abstract
The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest of the electronics community. However, many mainstream candidates are challenged by scarce and expensive components, manufacturing costs, low stability, and limitations of large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide semiconductors for high-performance complementary electronics using standard room temperature thermal evaporation. The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm2 V-1 s-1, on/off current ratios exceeding 108, and high stability. Complementary inverters are constructed in combination with p-channel tellurium device with hole mobilities of over 50 cm2 V-1 s-1, delivering remarkable voltage transfer characteristics with a high gain of 200. This work has laid the foundation for depositing scalable electronics in a simple and cost-effective manner, which is compatible with monolithic integration with commercial products such as organic light-emitting diodes.
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Affiliation(s)
- Ao Liu
- grid.49100.3c0000 0001 0742 4007Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673 Republic of Korea
| | - Huihui Zhu
- grid.49100.3c0000 0001 0742 4007Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673 Republic of Korea
| | - Taoyu Zou
- grid.49100.3c0000 0001 0742 4007Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673 Republic of Korea
| | - Youjin Reo
- grid.49100.3c0000 0001 0742 4007Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673 Republic of Korea
| | - Gi-Seong Ryu
- grid.49100.3c0000 0001 0742 4007Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673 Republic of Korea
| | - Yong-Young Noh
- grid.49100.3c0000 0001 0742 4007Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673 Republic of Korea
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30
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Ji S, Chen X. Enhancing the interfacial binding strength between modular stretchable electronic components. Natl Sci Rev 2022; 10:nwac172. [PMID: 36684519 PMCID: PMC9843131 DOI: 10.1093/nsr/nwac172] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2022] [Revised: 07/14/2022] [Accepted: 08/19/2022] [Indexed: 01/25/2023] Open
Abstract
Stretchable electronics are emerging for personalized and decentralized clinics, wearable devices and human-machine interactions. Nowadays, separated stretchable functional parts have been well developed and are approaching practical usage. However, the production of whole stretchable devices with full functions still faces a huge challenge: the integration of different components, which was hindered by the mechanical mismatch and stress/strain concentration at the connection interfaces. To avoid connection failure in stretchable devices, a new research focus is to improve the interfacial binding strength between different components. In this review, recent developments to enhance interfacial strength in wearable/implantable electronics are introduced and catalogued into three major strategies: (i) covalent bonding between different device parts, (ii) molecular interpenetration or mechanical interlocking at the interfaces and (iii) covalent connection between the human body and devices. Besides reviewing current methods, we also discuss the existing challenges and possible improvements for stretchable devices from the aspect of interfacial connections.
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Affiliation(s)
- Shaobo Ji
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University,Singapore 639798, Singapore
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31
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Shen C, Yin Z, Collins F, Pinna N. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104599. [PMID: 35712776 PMCID: PMC9376853 DOI: 10.1002/advs.202104599] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Revised: 03/23/2022] [Indexed: 06/15/2023]
Abstract
Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.
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Affiliation(s)
- Chengxu Shen
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Zhigang Yin
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of Sciences155 Yangqiao West RoadFuzhouFujian350002China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108China
| | - Fionn Collins
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Nicola Pinna
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
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32
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Urbanos FJ, Gullace S, Samorì P. MoS 2 Defect Healing for High-Performance Chemical Sensing of Polycyclic Aromatic Hydrocarbons. ACS NANO 2022; 16:11234-11243. [PMID: 35796589 DOI: 10.1021/acsnano.2c04503] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The increasing population and industrial development are responsible for environmental pollution. Among toxic chemicals, polycyclic aromatic hydrocarbons (PAHs) are highly carcinogenic contaminants resulting from the incomplete combustion of organic materials. Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), are ideal sensory scaffolds, combining high surface-to-volume ratio with physical and chemical properties that are strongly susceptible to environmental changes. TMDCs can be integrated in field-effect transistors (FETs), which can operate as high-performance chemical detectors of (non)covalent interaction with small molecules. Here, we have developed MoS2-based FETs as platforms for PAHs sensing, relying on the affinity of the planar polyaromatic molecules for the basal plane of MoS2 and the structural defects in its lattice. X-ray photoelectron spectroscopy analysis, photoluminescence measurements, and transfer characteristics showed a notable reduction in the defectiveness of MoS2 and a p-type doping upon exposure to PAHs solutions, with a magnitude determined by the correlation between the ionization energies (EI) of the PAH and that of MoS2. Naphthalene, endowed with the higher EI among the studied PAHs, exhibited the highest output. We observed a log-log correlation between MoS2 doping and naphthalene concentration in water in a wide range (10-9-10-6 M), as well as a reversible response to the analyte. Naphthalene concentrations as low as 0.128 ppb were detected, being below the limits imposed by health regulations for drinking water. Furthermore, our MoS2 devices can reversibly detect vapors of naphthalene with both an electrical and optical readout, confirming that our architecture could operate as a dual sensing platform.
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Affiliation(s)
- Fernando J Urbanos
- University of Strasbourg, CNRS, ISIS, UMR 7006, 8 Allée Gaspard Monge, Strasbourg, F-67000, France
| | - Sara Gullace
- University of Strasbourg, CNRS, ISIS, UMR 7006, 8 Allée Gaspard Monge, Strasbourg, F-67000, France
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS, UMR 7006, 8 Allée Gaspard Monge, Strasbourg, F-67000, France
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Karpińska M, Jasiński J, Kempt R, Ziegler JD, Sansom H, Taniguchi T, Watanabe K, Snaith HJ, Surrente A, Dyksik M, Maude DK, Kłopotowski Ł, Chernikov A, Kuc A, Baranowski M, Plochocka P. Interlayer excitons in MoSe 2/2D perovskite hybrid heterostructures - the interplay between charge and energy transfer. NANOSCALE 2022; 14:8085-8095. [PMID: 35611659 DOI: 10.1039/d2nr00877g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals crystals have opened a new and exciting chapter in heterostructure research, removing the lattice matching constraint characteristics of epitaxial semiconductors. They provide unprecedented flexibility for heterostructure design. Combining two-dimensional (2D) perovskites with other 2D materials, in particular transition metal dichalcogenides (TMDs), has recently emerged as an intriguing way to design hybrid opto-electronic devices. However, the excitation transfer mechanism between the layers (charge or energy transfer) remains to be elucidated. Here, we investigate PEA2PbI4/MoSe2 and (BA)2PbI4/MoSe2 heterostructures by combining optical spectroscopy and density functional theory (DFT) calculations. We show that band alignment facilitates charge transfer. Namely, holes are transferred from TMDs to 2D perovskites, while the electron transfer is blocked, resulting in the formation of interlayer excitons. Moreover, we show that the energy transfer mechanism can be turned on by an appropriate alignment of the excitonic states, providing a rule of thumb for the deterministic control of the excitation transfer mechanism in TMD/2D-perovskite heterostructures.
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Affiliation(s)
- M Karpińska
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
- Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
| | - J Jasiński
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - R Kempt
- Technische Universität Dresden, Bergstr. 66c, 01062 Dresden, Germany
| | - J D Ziegler
- Department of Physics, University of Regensburg, Regensburg D-93053, Germany
| | - H Sansom
- University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-004, Japan
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-004, Japan
| | - H J Snaith
- University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - A Surrente
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - M Dyksik
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - D K Maude
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
| | - Ł Kłopotowski
- Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
| | - A Chernikov
- Department of Physics, University of Regensburg, Regensburg D-93053, Germany
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - A Kuc
- Helmholtz-Zentrum Dresden-Rossendorf, Permoserstraße 15, 04318 Leipzig, Germany.
| | - M Baranowski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - P Plochocka
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
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Fabrication of devices featuring covalently linked MoS2–graphene heterostructures. Nat Chem 2022; 14:695-700. [DOI: 10.1038/s41557-022-00924-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Accepted: 03/07/2022] [Indexed: 11/08/2022]
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35
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Sun S, Zheng J, Sun R, Wang D, Sun G, Zhang X, Gong H, Li Y, Gao M, Li D, Xu G, Liang X. Defect-Rich Monolayer MoS 2 as a Universally Enhanced Substrate for Surface-Enhanced Raman Scattering. NANOMATERIALS 2022; 12:nano12060896. [PMID: 35335709 PMCID: PMC8953205 DOI: 10.3390/nano12060896] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 03/01/2022] [Accepted: 03/04/2022] [Indexed: 02/04/2023]
Abstract
Monolayer 2H-MoS2 has been widely noticed as a typical transition metal dichalcogenides (TMDC) for surface-enhanced Raman scattering (SERS). However, monolayer MoS2 is limited to a narrow range of applications due to poor detection sensitivity caused by the combination of a lower density of states (DOS) near the Fermi energy level as well as a rich fluorescence background. Here, surfaced S and Mo atomic defects are fabricated on a monolayer MoS2 with a perfect lattice. Defects exhibit metallic properties. The presence of defects enhances the interaction between MoS2 and the detection molecule, and it increases the probability of photoinduced charge transfer (PICT), resulting in a significant improvement of Raman enhancement. Defect-containing monolayer MoS2 enables the fluorescence signal of many dyes to be effectively burst, making the SERS spectrum clearer and making the limits of detection (LODs) below 10−8 M. In conclusion, metallic defect-containing monolayer MoS2 becomes a promising and versatile substrate capable of detecting a wide range of dye molecules due to its abundant DOS and effective PICT resonance. In addition, the synergistic effect of surface defects and of the MoS2 main body presents a new perspective for plasma-free SERS based on the chemical mechanism (CM), which provides promising theoretical support for other TMDC studies.
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Affiliation(s)
- Shiyu Sun
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China;
| | - Ruihao Sun
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Dan Wang
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Guanliang Sun
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Xingshuang Zhang
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Hongyu Gong
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Yong Li
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Meng Gao
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
| | - Dongwei Li
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
- Correspondence: (D.L.); (G.X.); (X.L.)
| | - Guanchen Xu
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
- Correspondence: (D.L.); (G.X.); (X.L.)
| | - Xiu Liang
- Key Laboratory for High Strength Lightweight Metallic Materials of Shandong Province (HM), Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China; (S.S.); (R.S.); (D.W.); (G.S.); (X.Z.); (H.G.); (Y.L.); (M.G.)
- Correspondence: (D.L.); (G.X.); (X.L.)
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Han B, Zhao Y, Ma C, Wang C, Tian X, Wang Y, Hu W, Samorì P. Asymmetric Chemical Functionalization of Top-Contact Electrodes: Tuning the Charge Injection for High-Performance MoS 2 Field-Effect Transistors and Schottky Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109445. [PMID: 35061928 DOI: 10.1002/adma.202109445] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2021] [Revised: 01/11/2022] [Indexed: 06/14/2023]
Abstract
The fabrication of high-performance (opto-)electronic devices based on 2D channel materials requires the optimization of the charge injection at electrode-semiconductor interfaces. While chemical functionalization with chemisorbed self-assembled monolayers has been extensively exploited to adjust the work function of metallic electrodes in bottom-contact devices, such a strategy has not been demonstrated for the top-contact configuration, despite the latter being known to offer enhanced charge-injection characteristics. Here, a novel contact engineering method is developed to functionalize gold electrodes in top-contact field-effect transistors (FETs) via the transfer of chemically pre-modified electrodes. The source and drain Au electrodes of the molybdenum disulfide (MoS2 ) FETs are functionalized with thiolated molecules possessing different dipole moments. While the modification of the electrodes with electron-donating molecules yields a marked improvement of device performance, the asymmetric functionalization of the source and drain electrodes with different molecules with opposed dipole moment enables the fabrication of a high-performance Schottky diode with a rectification ratio of ≈103 . This unprecedented strategy to tune the charge injection in top-contact MoS2 FETs is of general applicability for the fabrication of high-performance (opto-)electronic devices, in which asymmetric charge injection is required, enabling tailoring of the device characteristics on demand.
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Affiliation(s)
- Bin Han
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Yuda Zhao
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Chun Ma
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Can Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Xinzi Tian
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
| | - Ye Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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37
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Ricciardulli AG, Wang Y, Yang S, Samorì P. Two-Dimensional Violet Phosphorus: A p-Type Semiconductor for (Opto)electronics. J Am Chem Soc 2022; 144:3660-3666. [PMID: 35179356 DOI: 10.1021/jacs.1c12931] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
The synthesis of novel two-dimensional (2D) materials displaying an unprecedented composition and structure via the exfoliation of layered systems provides access to uncharted properties. For application in optoelectronics, a vast majority of exfoliated 2D semiconductors possess n-type or more seldom ambipolar characteristics. The shortage of p-type 2D semiconductors enormously hinders the extensive engineering of 2D devices for complementary metal oxide semiconductors (CMOSs) and beyond CMOS applications. However, despite the recent progress in the development of 2D materials endowed with p-type behaviors by direct synthesis or p-doping strategies, finding new structures is still of primary importance. Here, we report the sonication-assisted liquid-phase exfoliation of violet phosphorus (VP) crystals into few-layer-thick flakes and the first exploration of their electrical and optical properties. Field-effect transistors based on exfoliated VP thin films exhibit a p-type transport feature with an Ion/Ioff ratio of 104 and a hole mobility of 2.25 cm2 V-1 s-1 at room temperature. In addition, the VP film-based photodetectors display a photoresponsivity (R) of 10 mA W-1 and a response time down to 0.16 s. Finally, VP embedded into CMOS inverter arrays displays a voltage gain of ∼17. This scalable production method and high quality of the exfoliated material combined with the excellent optoelectronic performances make VP an enticing and versatile p-type candidate for next-generation more-than-Moore (opto)electronics.
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Affiliation(s)
| | - Ye Wang
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France
| | - Sheng Yang
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01069 Dresden, Germany
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France
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38
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Ippolito S, Samorì P. Defect Engineering Strategies Toward Controlled Functionalization of Solution‐Processed Transition Metal Dichalcogenides. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100122] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022] Open
Affiliation(s)
- Stefano Ippolito
- CNRS ISIS UMR 7006 University of Strasbourg 8 Allée Gaspard Monge 67000 Strasbourg France
| | - Paolo Samorì
- CNRS ISIS UMR 7006 University of Strasbourg 8 Allée Gaspard Monge 67000 Strasbourg France
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39
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Jeong JH, Kang S, Kim N, Joshi RK, Lee GH. Recent trends in covalent functionalization of 2D materials. Phys Chem Chem Phys 2022; 24:10684-10711. [DOI: 10.1039/d1cp04831g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Covalent functionalization of the surface is more crucial in 2D materials than in conventional bulk materials because of their atomic thinness, large surface-to-volume ratio, and uniform surface chemical potential. Because...
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Cheng P, Ye LL, Wu SC, Chen Y, Yan X, Guo XJ, Lang WZ. Amorphous TiO 2 Bridges Stabilized WS 2 Membranes with Excellent Filtration Stability and Photocatalysis-Driving Self-Cleaning Ability. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58076-58084. [PMID: 34816708 DOI: 10.1021/acsami.1c14967] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) membranes as a new type of water filtration membrane have shown great potential in water separation and purification. However, their long-term stability under cross-flow conditions and their antifouling property are two main concerns for practical separation and purification processes. In this work, a strategy of nanoparticle bridges based on amorphous TiO2 is developed to link adjacent WS2 nanosheets on a WS2 membrane surface, leading to a strong membrane surface with excellent stability during 204 h of continuous cross-flow filtration. Moreover, the amorphous TiO2 bridges also form a TiO2/WS2 heterojunction on the WS2 membrane surface, exhibiting an impressive photocatalysis-driving self-cleaning property by pollutant photodegradation. And the flux recovery ratio (FRR) exceeds 95% after three cycles of separation experiments. The excellent long-term stability and photocatalysis-driving self-cleaning property of the WS2/TiO2 membrane provide a new approach to construct robust 2D membranes.
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Affiliation(s)
- Peng Cheng
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
| | - Lin-Lin Ye
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
| | - Shao-Chun Wu
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
| | - Yan Chen
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
| | - Xi Yan
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
| | - Xiao-Jing Guo
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
| | - Wan-Zhong Lang
- The Education Ministry Key Lab of Resource Chemistry, Joint International Research Laboratory of Resource Chemistry, Ministry of Education, and Shanghai Key Laboratory of Rare Earth Functional Materials, College of Chemistry and Materials Science, Shanghai Normal University, Shanghai 200234, P. R. China
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Urbanos FJ, Gullace S, Samorì P. Field-effect-transistor-based ion sensors: ultrasensitive mercury(II) detection via healing MoS 2 defects. NANOSCALE 2021; 13:19682-19689. [PMID: 34817489 DOI: 10.1039/d1nr05992k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The contamination of water with heavy metal ions represents a harsh environmental problem resulting from societal development. Among various hazardous compounds, mercury ions (Hg2+) surely belong to the most poisonous ones. Their accumulation in the human body results in health deterioration, affecting vital organs and eventually leading to chronic diseases, and, in the worst-case scenario, early death. High selectivity and sensitivity for the analyte of choice can be achieved in chemical sensing using suitable active materials capable of interacting at the supramolecular level with the chosen species. Among them, 2D transition metal dichalcogenides (TMDCs) have attracted great attention as sensory materials because of their unique physical and chemical properties, which are highly susceptible to environmental changes. In this work, we have fabricated MoS2-based field-effect transistors (FETs) and exploited them as platforms for Hg2+ sensing, relying on the affinity of heavy metal ions for both point defects in TMDCs and sulphur atoms in the MoS2 lattice. X-ray photoelectron spectroscopy characterization showed both a significant reduction of the defectiveness of MoS2 when exposed to Hg2+ with increasing concentration and a shift in the binding energy of 0.2 eV suggesting p-type doping of the 2D semiconductor. The efficient defect healing has been confirmed also by low-temperature photoluminescence measurements by monitoring the attenuation of defect-related bands after Hg2+ exposure. Transfer characteristics in MoS2 FETs provided further evidence that Hg2+ acts as a p-dopant of MoS2. Interestingly, we observed a strict correlation of doping with the concentration of Hg2+, following a semi-log trend. Hg2+ concentrations as low as 1 pM can be detected, being way below the limits imposed by health regulations. Electrical characterization also revealed that our sensor can be efficiently washed and used multiple times. Moreover, the developed devices displayed a markedly high selectivity for Hg2+ against other metal ions as ruled by soft/soft interaction among chemical systems with appropriate redox potentials, being a generally applicable approach to develop chemical sensing devices combining high sensitivity, selectivity and reversibility, to meet technological needs.
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Affiliation(s)
- Fernando J Urbanos
- University of Strasbourg CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, Strasbourg F-67000, France.
| | - Sara Gullace
- University of Strasbourg CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, Strasbourg F-67000, France.
| | - Paolo Samorì
- University of Strasbourg CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, Strasbourg F-67000, France.
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Mondal SK, Biswas A, Pradhan JR, Dasgupta S. Inkjet-Printed MoS 2 Transistors with Predominantly Intraflake Transport. SMALL METHODS 2021; 5:e2100634. [PMID: 34928044 DOI: 10.1002/smtd.202100634] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Revised: 09/23/2021] [Indexed: 06/14/2023]
Abstract
2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare combination of physical properties that include a large-enough bandgap to ensure sufficient current modulation in transistors, matching electron and hole mobility for complimentary logic operation, and sufficient mechanical flexibility of the nanosheets. Moreover, the solvent-exfoliated TMD-nanosheets may also be processed at low temperatures and onto a wide variety of substrates. However, the poor inter-flake transport in solution-cast 2D-TMD network transistors hinders the realization of high device mobility and current modulations that the intraflake transistors can regularly demonstrate. In this regard, fully printed and electrolyte-gated, narrow-channel MoS2 field-effect transistors (FETs) with simultaneous high current saturation (>310 µA µm-1 ) and on-off ratio (>106 ) are proposed here. The transport limitation is overcome by printing an additional metal layer onto the 2D-TMD nanosheet channel, which substantially shortens the effective channel lengths and results in predominant intraflake transport. In addition, a channel-capacitance-modulation induced subthermionic transport is recorded, which leads to a subthreshold slope value as low as 7.5 mV dec-1 . On the other hand, thermionic MOSFETs and fully printed depletion-mode NMOS inverters are also presented. The demonstrated generic approach involving chemically exfoliated nanosheet inks and the absolute device yield indicates the feasibility of fully printed 2D-TMD electronics.
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Affiliation(s)
- Sandeep K Mondal
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bengaluru, 560012, India
| | - Ananya Biswas
- Department of Organic Chemistry, Indian Institute of Science (IISc), C V Raman Avenue, Bengaluru, 560012, India
| | - Jyoti R Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bengaluru, 560012, India
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bengaluru, 560012, India
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Karger L, Synnatschke K, Settele S, Hofstetter YJ, Nowack T, Zaumseil J, Vaynzof Y, Backes C. The Role of Additives in Suppressing the Degradation of Liquid-Exfoliated WS 2 Monolayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102883. [PMID: 34477255 DOI: 10.1002/adma.202102883] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Revised: 07/16/2021] [Indexed: 06/13/2023]
Abstract
Group VI transition metal dichalcogenides (TMDs) are considered to be chemically widely inert, but recent reports point toward an oxidation of monolayered sheets in ambient conditions, due to defects. To date, the degradation of monolayered TMDs is only studied on individual, substrate-supported nanosheets with varying defect type and concentration, strain, and in an inhomogeneous environment. Here, degradation kinetics of WS2 nanosheet ensembles in the liquid phase are investigated through photoluminescence measurements, which selectively probe the monolayers. Monolayer-enriched WS2 dispersions are produced with varying lateral sizes in the two common surfactant stabilizers sodium cholate (SC) and sodium dodecyl sulfate (SDS). Well-defined degradation kinetics are observed, which enable the determination of activation energies of the degradation and decouple photoinduced and thermal degradation. The thermal degradation is slower than the photoinduced degradation and requires higher activation energy. Using SC as surfactant, it is sufficiently suppressed. The photoinduced degradation can be widely prevented through chemical passivation achieved through the addition of cysteine which, on the one hand, coordinates to defects on the nanosheets and, on the other hand, stabilizes oxides on the surface, which shield the nanosheets from further degradation.
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Affiliation(s)
- Leonhard Karger
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Kevin Synnatschke
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Simon Settele
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Yvonne J Hofstetter
- Integrated Center for Applied Photophysics and Photonic Materials, TU Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), TU Dresden, Helmhotzstraße 18, 01069, Dresden, Germany
| | - Tim Nowack
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Jana Zaumseil
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
- Centre for Advanced Materials, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 225, 69120, Heidelberg, Germany
| | - Yana Vaynzof
- Integrated Center for Applied Photophysics and Photonic Materials, TU Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), TU Dresden, Helmhotzstraße 18, 01069, Dresden, Germany
| | - Claudia Backes
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
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